- All sections
- H - Electricity
- H10B - Electronic memory devices
- H10B 43/20 - EEPROM devices comprising charge-trapping gate insulators characterised by three-dimensional arrangements, e.g. with cells on different height levels
Patent holdings for IPC class H10B 43/20
Total number of patents in this class: 437
10-year publication summary
|
0
|
1
|
0
|
1
|
7
|
30
|
78
|
110
|
124
|
88
|
| 2016 | 2017 | 2018 | 2019 | 2020 | 2021 | 2022 | 2023 | 2024 | 2025 |
Principal owners for this class
| Owner |
All patents
|
This class
|
|---|---|---|
| Kioxia Corporation | 10441 |
93 |
| Monolithic 3D Inc. | 312 |
51 |
| Samsung Electronics Co., Ltd. | 148077 |
49 |
| Yangtze Memory Technologies Co., Ltd. | 2792 |
49 |
| Micron Technology, Inc. | 26279 |
40 |
| Taiwan Semiconductor Manufacturing Company, Ltd. | 44095 |
30 |
| SK Hynix Inc. | 11536 |
22 |
| Applied Materials, Inc. | 19005 |
15 |
| Macronix International Co., Ltd. | 2547 |
10 |
| Sunrise Memory Corporation | 212 |
9 |
| Sandisk Technologies Inc. | 4885 |
8 |
| Semiconductor Energy Laboratory Co., Ltd. | 11487 |
6 |
| Tokyo Electron Limited | 13008 |
4 |
| Lam Research Corporation | 5326 |
4 |
| NEO Semiconductor, Inc. | 68 |
4 |
| Chengdu PBM Technology Ltd. | 29 |
4 |
| Lodestar Licensing Group LLC | 1068 |
4 |
| Winbond Electronics Corp. | 1310 |
3 |
| United Microelectronics Corp. | 4264 |
2 |
| Korea Advanced Institute of Science and Technology | 4422 |
2 |
| Other owners | 28 |