- All sections
- H - Electricity
- H10B - Electronic memory devices
- H10B 41/27 - Electrically erasable-and-programmable ROM [EEPROM] devices comprising floating gates characterised by three-dimensional arrangements, e.g. with cells on different height levels with source and drain on different levels, e.g. with sloping channels the channels comprising vertical portions, e.g. U-shaped channels
Patent holdings for IPC class H10B 41/27
Total number of patents in this class: 2540
10-year publication summary
|
0
|
0
|
0
|
0
|
15
|
168
|
607
|
523
|
723
|
508
|
| 2016 | 2017 | 2018 | 2019 | 2020 | 2021 | 2022 | 2023 | 2024 | 2025 |
Principal owners for this class
| Owner |
All patents
|
This class
|
|---|---|---|
| Samsung Electronics Co., Ltd. | 148584 |
580 |
| Micron Technology, Inc. | 26365 |
391 |
| SK Hynix Inc. | 11586 |
316 |
| Kioxia Corporation | 10453 |
281 |
| Yangtze Memory Technologies Co., Ltd. | 2873 |
244 |
| Sandisk Technologies Inc. | 4894 |
237 |
| Lodestar Licensing Group LLC | 1080 |
104 |
| Taiwan Semiconductor Manufacturing Company, Ltd. | 44638 |
58 |
| Macronix International Co., Ltd. | 2546 |
47 |
| Applied Materials, Inc. | 19087 |
36 |
| JPMorgan Chase Bank, N.A., AS The Agent | 2619 |
36 |
| Semiconductor Energy Laboratory Co., Ltd. | 11507 |
21 |
| Lam Research Corporation | 5340 |
19 |
| Tokyo Electron Limited | 13043 |
16 |
| Sandisk Technologies LLC | 1453 |
16 |
| Intel NDTM US LLC | 450 |
13 |
| IUCF-HYU (Industry-University Cooperation Foundation Hanyang University) | 1449 |
8 |
| Monolithic 3D Inc. | 312 |
8 |
| Winbond Electronics Corp. | 1319 |
6 |
| Sunrise Memory Corporation | 212 |
6 |
| Other owners | 97 |