• All sections
  • H - Electricity
  • H10B - Electronic memory devices
  • H10B 41/27 - Electrically erasable-and-programmable ROM [EEPROM] devices comprising floating gates characterised by three-dimensional arrangements, e.g. with cells on different height levels with source and drain on different levels, e.g. with sloping channels the channels comprising vertical portions, e.g. U-shaped channels

Patent holdings for IPC class H10B 41/27

Total number of patents in this class: 2540

10-year publication summary

0
0
0
0
15
168
607
523
723
508
2016 2017 2018 2019 2020 2021 2022 2023 2024 2025

Principal owners for this class

Owner
All patents
This class
Samsung Electronics Co., Ltd.
148584
580
Micron Technology, Inc.
26365
391
SK Hynix Inc.
11586
316
Kioxia Corporation
10453
281
Yangtze Memory Technologies Co., Ltd.
2873
244
Sandisk Technologies Inc.
4894
237
Lodestar Licensing Group LLC
1080
104
Taiwan Semiconductor Manufacturing Company, Ltd.
44638
58
Macronix International Co., Ltd.
2546
47
Applied Materials, Inc.
19087
36
JPMorgan Chase Bank, N.A., AS The Agent
2619
36
Semiconductor Energy Laboratory Co., Ltd.
11507
21
Lam Research Corporation
5340
19
Tokyo Electron Limited
13043
16
Sandisk Technologies LLC
1453
16
Intel NDTM US LLC
450
13
IUCF-HYU (Industry-University Cooperation Foundation Hanyang University)
1449
8
Monolithic 3D Inc.
312
8
Winbond Electronics Corp.
1319
6
Sunrise Memory Corporation
212
6
Other owners 97