• All sections
  • H - Electricity
  • H01L - Semiconductor devices not covered by class
  • H01L 27/11582 - Electrically programmable read-only memories; Multistep manufacturing processes therefor with charge-trapping gate insulators, e.g. MNOS or NROM characterised by three-dimensional arrangements, e.g. with cells on different height levels with source and drain on different levels, e.g. with sloping channels the channels comprising vertical portions, e.g. U-shaped channels

Patent holdings for IPC class H01L 27/11582

Total number of patents in this class: 5277

10-year publication summary

260
644
614
850
1130
1055
505
339
64
0
2016 2017 2018 2019 2020 2021 2022 2023 2024 2025

Principal owners for this class

Owner
All patents
This class
Samsung Electronics Co., Ltd.
148765
998
Kioxia Corporation
10452
886
Micron Technology, Inc.
26461
714
Sandisk Technologies Inc.
4918
610
Yangtze Memory Technologies Co., Ltd.
2913
479
SK Hynix Inc.
11629
470
Sandisk Technologies LLC
1452
174
Macronix International Co., Ltd.
2544
150
Applied Materials, Inc.
19173
83
Lodestar Licensing Group LLC
1091
67
Sunrise Memory Corporation
213
59
Tokyo Electron Limited
13083
50
Taiwan Semiconductor Manufacturing Company, Ltd.
45590
37
Intel NDTM US LLC
449
36
Mimirip LLC
1419
30
Semiconductor Energy Laboratory Co., Ltd.
11534
29
Lam Research Corporation
5354
26
Toshiba Memory Corporation
236
25
IUCF-HYU (Industry-University Cooperation Foundation Hanyang University)
1455
24
Monolithic 3D Inc.
316
18
Other owners 312