- All sections
- H - Electricity
- H01L - Semiconductor devices not covered by class
- H01L 27/11582 - Electrically programmable read-only memories; Multistep manufacturing processes therefor with charge-trapping gate insulators, e.g. MNOS or NROM characterised by three-dimensional arrangements, e.g. with cells on different height levels with source and drain on different levels, e.g. with sloping channels the channels comprising vertical portions, e.g. U-shaped channels
Patent holdings for IPC class H01L 27/11582
Total number of patents in this class: 5277
10-year publication summary
|
260
|
644
|
614
|
850
|
1130
|
1055
|
505
|
339
|
64
|
0
|
| 2016 | 2017 | 2018 | 2019 | 2020 | 2021 | 2022 | 2023 | 2024 | 2025 |
Principal owners for this class
| Owner |
All patents
|
This class
|
|---|---|---|
| Samsung Electronics Co., Ltd. | 148765 |
998 |
| Kioxia Corporation | 10452 |
886 |
| Micron Technology, Inc. | 26461 |
714 |
| Sandisk Technologies Inc. | 4918 |
610 |
| Yangtze Memory Technologies Co., Ltd. | 2913 |
479 |
| SK Hynix Inc. | 11629 |
470 |
| Sandisk Technologies LLC | 1452 |
174 |
| Macronix International Co., Ltd. | 2544 |
150 |
| Applied Materials, Inc. | 19173 |
83 |
| Lodestar Licensing Group LLC | 1091 |
67 |
| Sunrise Memory Corporation | 213 |
59 |
| Tokyo Electron Limited | 13083 |
50 |
| Taiwan Semiconductor Manufacturing Company, Ltd. | 45590 |
37 |
| Intel NDTM US LLC | 449 |
36 |
| Mimirip LLC | 1419 |
30 |
| Semiconductor Energy Laboratory Co., Ltd. | 11534 |
29 |
| Lam Research Corporation | 5354 |
26 |
| Toshiba Memory Corporation | 236 |
25 |
| IUCF-HYU (Industry-University Cooperation Foundation Hanyang University) | 1455 |
24 |
| Monolithic 3D Inc. | 316 |
18 |
| Other owners | 312 |