- All sections
- H - Electricity
- H01L - Semiconductor devices not covered by class
- H01L 27/11578 - Electrically programmable read-only memories; Multistep manufacturing processes therefor with charge-trapping gate insulators, e.g. MNOS or NROM characterised by three-dimensional arrangements, e.g. with cells on different height levels
Patent holdings for IPC class H01L 27/11578
Total number of patents in this class: 805
10-year publication summary
45
|
85
|
85
|
117
|
179
|
161
|
114
|
61
|
6
|
0
|
2016 | 2017 | 2018 | 2019 | 2020 | 2021 | 2022 | 2023 | 2024 | 2025 |
Principal owners for this class
Owner |
All patents
|
This class
|
---|---|---|
Kioxia Corporation | 10251 |
147 |
Yangtze Memory Technologies Co., Ltd. | 2508 |
143 |
Samsung Electronics Co., Ltd. | 142415 |
108 |
Micron Technology, Inc. | 26095 |
86 |
Monolithic 3D Inc. | 309 |
59 |
Sandisk Technologies Inc. | 4814 |
43 |
Sandisk Technologies LLC | 1452 |
43 |
SK Hynix Inc. | 11088 |
32 |
Macronix International Co., Ltd. | 2572 |
23 |
Applied Materials, Inc. | 18358 |
13 |
Sunrise Memory Corporation | 210 |
13 |
Taiwan Semiconductor Manufacturing Company, Ltd. | 41636 |
12 |
Lam Research Corporation | 5127 |
8 |
Tokyo Electron Limited | 12371 |
6 |
International Business Machines Corporation | 60649 |
5 |
Intel NDTM US LLC | 423 |
5 |
United Microelectronics Corp. | 4189 |
4 |
Toshiba Memory Corporation | 237 |
4 |
Longitude Flash Memory Solutions Ltd. | 280 |
4 |
Lodestar Licensing Group LLC | 960 |
4 |
Other owners | 43 |