Shin-Etsu Handotai Co., Ltd.

Japon

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Quantité totale PI 1 294
Rang # Quantité totale PI 1 068
Note d'activité PI 3,4/5.0    490
Rang # Activité PI 1 434
Parent Shin-Etsu Chemical Co., Ltd.
Classe Nice dominante Appareils et instruments scienti...

Brevets

Marques

449 2
0 0
839 4
0
 
Dernier brevet 2026 - Debris determination method
Premier brevet 1983 - Apparatus for chemical etching o...
Dernière marque 2023 - IG-NANA
Première marque 2000 - EP-NANA

Filiales

1 subsidiaries without IP

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Industrie (Classification de Nice)

Derniers inventions, produits et services

2025 Invention Method for evaluating surface defect of sige substrate. The present invention is a method for eva...
Invention Substrate containing carbon-doped silicon epitaxial layer and method for manufacturing same. The ...
Invention Management method of surface defect inspection device and standard wafer. The present invention i...
Invention Silicene layer-containing silicon substrate and method for producing same. The present invention ...
Invention Epitaxial wafer. The present invention provides an epitaxial wafer which has a single crystal Si ...
Invention Compound semiconductor substrate and method for producing compound semiconductor substrate. x1-xy...
Invention Selective etching liquid and method for evaluating sige substrate. 3322O. Thus, provided is a chr...
Invention Method for producing semiconductor wafer. The present invention provides a method for producing a...
Invention Exhaust arraratus, silicon single-crystal production apparatus, exhaust method, and method for pr...
Invention Method for producing sige substrate and sige substrate. 1-xx1-yy1-zzz layer (0
Invention Sige substrate manufacturing method. The present invention provides a SiGe substrate manufacturin...
Invention Ge-containing substrate, and method for manufacturing ge-containing substrate. x1-x1-x layer (0≤x...
Invention Method for producing sige substrate and sige substrate. The present invention is a method for man...
Invention Epitaxial substrate, method for manufacturing same, and method for manufacturing vertical device ...
Invention Production method for sige substrate. The present invention is a production method for an SiGe su...
Invention Cylindrical grinding method and cylindrical grinder. The present invention is a cylindrical grind...
Invention Method for measuring oxygen concentration of oxygen atomic layer. The present invention provides ...
Invention Method for manufacturing high frequency soi wafer. The present invention is a method for manufact...
Invention Defect evaluation method for semiconductor silicon wafer. The present invention is a defect evalu...
Invention Method for manufacturing epitaxial wafer. The present invention is a method for manufacturing an ...
Invention Silicon substrate heat treatment method. The present invention is a heat treatment method for per...
Invention Silicon substrate and heat treatment method for silicon substrate. The present invention provides...
Invention Method for measuring resistivity of silicon single crystal. The present invention is a method fo...
2024 Invention Method for determining defect region of silicon single-crystal substrate. The present invention i...
Invention Method for manufacturing heteroepitaxial wafer. The present invention is a method for manufacturi...
Invention Manufacturing method for nitride semiconductor epitaxial substrate, nitride semiconductor epitaxi...
Invention Method for evaluating crystallinity of 3c-sic film. The present invention provides a method for e...
Invention Pinhole and deaeration failure inspection method for bag body in which sealed storage container i...
Invention Single-crystal silicon substrate and method for producing single-crystal silicon substrate. The p...
Invention Nitride semiconductor epitaxial wafer and method for manufacturing nitride semiconductor epitaxia...
2023 Invention Debris determination method. A debris determination method of determining presence or absence of...
Invention Method for manufacturing silicon substrate for quantum computer, silicon substrate for quantum co...
Invention Method for producing silicon single crystal. A method for producing silicon single crystal by CZ...
Invention Method for producing semiconductor wafer and semiconductor wafer. A method for producing a semic...
Invention Method for producing heteroepitaxial wafer. A method for producing a heteroepitaxial wafer of he...
Invention Method for growing diamond layer and microwave plasma cvd apparatus. The present invention is a ...
Invention Method for producing bonded light-emitting device wafer and method for transferring micro led. T...
P/S Semiconductor silicon wafers; Semiconductor silicon ingots sold as an integral component of semic...
Invention Member having heat spreader structure and method for producing same. The present invention is a ...
Invention Epitaxial wafer. The present invention is an epitaxial wafer, including an epitaxial film of a s...
Invention Method for producing light emitting device. The present invention is a method for producing a li...
Invention Group-iii nitride semiconductor wafer and method for producing same. The present invention is a ...
Invention Substrate for electronic device and method for producing the same. The present invention is a su...
Invention Method for growing diamond on silicon substrate and method for selectively growing diamond on sil...
2022 Invention Substrate for high-frequency device, and method for producing same. A substrate for a high-frequ...
Invention Wafer having micro-led structure, method for manufacturing wafer having micro-led structure, and ...
Invention Method for manufacturing bonded semiconductor wafer. The present invention provides a method for...
Invention Method for producing heteroepitaxial film. A method for efficiently producing a heteroepitaxial ...
Invention Nitride semiconductor substrate and method for producing same. The present invention provides a ...
2000 P/S Semiconductor silicon wafers, semiconductor silicon ingots.