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2025
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Invention
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Epitaxial wafer. The present invention provides an epitaxial wafer which has a single crystal Si ... |
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Invention
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Compound semiconductor substrate and method for producing compound semiconductor substrate. x1-xy... |
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Invention
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Selective etching liquid and method for evaluating sige substrate. 3322O. Thus, provided is a chr... |
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Invention
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Method for producing semiconductor wafer. The present invention provides a method for producing a... |
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Invention
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Exhaust arraratus, silicon single-crystal production apparatus, exhaust method, and method for pr... |
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Invention
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Method for producing sige substrate and sige substrate. 1-xx1-yy1-zzz layer (0
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Invention
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Sige substrate manufacturing method. The present invention provides a SiGe substrate manufacturin... |
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Invention
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Ge-containing substrate, and method for manufacturing ge-containing substrate. x1-x1-x layer (0≤x... |
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Invention
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Method for producing sige substrate and sige substrate. The present invention is a method for man... |
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Invention
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Epitaxial substrate, method for manufacturing same, and method for manufacturing vertical device ... |
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Invention
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Production method for sige substrate. The present invention is a production method for an SiGe su... |
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Invention
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Cylindrical grinding method and cylindrical grinder. The present invention is a cylindrical grind... |
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Invention
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Method for measuring oxygen concentration of oxygen atomic layer. The present invention provides ... |
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Invention
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Method for manufacturing high frequency soi wafer. The present invention is a method for manufact... |
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Invention
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Defect evaluation method for semiconductor silicon wafer. The present invention is a defect evalu... |
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Invention
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Method for manufacturing epitaxial wafer. The present invention is a method for manufacturing an ... |
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Invention
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Silicon substrate heat treatment method. The present invention is a heat treatment method for per... |
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Invention
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Silicon substrate and heat treatment method for silicon substrate. The present invention provides... |
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Invention
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Method for measuring resistivity of silicon single crystal.
The present invention is a method fo... |
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2024
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Invention
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Method for determining defect region of silicon single-crystal substrate. The present invention i... |
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Invention
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Method for manufacturing heteroepitaxial wafer. The present invention is a method for manufacturi... |
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Invention
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Manufacturing method for nitride semiconductor epitaxial substrate, nitride semiconductor epitaxi... |
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Invention
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Method for evaluating crystallinity of 3c-sic film. The present invention provides a method for e... |
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Invention
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Pinhole and deaeration failure inspection method for bag body in which sealed storage container i... |
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Invention
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Epitaxial wafer and production method therefor. The present invention is an epitaxial wafer compr... |
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Invention
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Soi wafer and method for manufacturing same. The present invention is a SOI wafer comprising, in ... |
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Invention
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Method for manufacturing epitaxial wafer. Provided is a method for manufacturing an epitaxial waf... |
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Invention
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Single-crystal silicon substrate and method for producing single-crystal silicon substrate. The p... |
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Invention
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Nitride semiconductor epitaxial wafer and method for manufacturing nitride semiconductor epitaxia... |
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Invention
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Diamond substrate and method for manufacturing diamond substrate. The present invention is a diam... |
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2023
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Invention
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Method for producing silicon single crystal.
A method for producing silicon single crystal by CZ... |
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Invention
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Method for producing semiconductor wafer and semiconductor wafer.
A method for producing a semic... |
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Invention
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Method for producing heteroepitaxial wafer.
A method for producing a heteroepitaxial wafer of he... |
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Invention
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Method for growing diamond layer and microwave plasma cvd apparatus.
The present invention is a ... |
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Invention
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Method for producing bonded light-emitting device wafer and method for transferring micro led.
T... |
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G/S
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Semiconductor silicon wafers; Semiconductor silicon ingots sold as an integral component of semic... |
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Invention
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Member having heat spreader structure and method for producing same.
The present invention is a ... |
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Invention
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Epitaxial wafer.
The present invention is an epitaxial wafer, including an epitaxial film of a s... |
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Invention
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Method for producing light emitting device.
The present invention is a method for producing a li... |
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Invention
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Group-iii nitride semiconductor wafer and method for producing same.
The present invention is a ... |
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Invention
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Substrate for electronic device and method for producing the same.
The present invention is a su... |
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Invention
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Method for growing diamond on silicon substrate and method for selectively growing diamond on sil... |
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2022
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Invention
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Substrate for high-frequency device, and method for producing same.
A substrate for a high-frequ... |
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Invention
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Nitride semiconductor substrate and method for producing same.
A nitride semiconductor substrate... |
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Invention
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Wafer having micro-led structure, method for manufacturing wafer having micro-led structure, and ... |
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Invention
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Nitride semiconductor substrate and method for producing same.
The present invention is a nitrid... |
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Invention
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Nitride semiconductor substrate and method for producing nitride semiconductor substrate.
The pr... |
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Invention
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Method for manufacturing bonded semiconductor wafer.
The present invention provides a method for... |
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Invention
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Method for producing heteroepitaxial film.
A method for efficiently producing a heteroepitaxial ... |
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Invention
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Nitride semiconductor substrate and method for producing same.
The present invention provides a ... |
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2000
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G/S
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Semiconductor silicon wafers, semiconductor silicon ingots. |
