- All sections
- H - Electricity
- H10B - Electronic memory devices
- H10B 51/30 - Ferroelectric RAM [FeRAM] devices comprising ferroelectric memory transistors characterised by the memory core region
Patent holdings for IPC class H10B 51/30
Total number of patents in this class: 530
10-year publication summary
|
0
|
0
|
0
|
0
|
1
|
28
|
114
|
136
|
174
|
73
|
| 2016 | 2017 | 2018 | 2019 | 2020 | 2021 | 2022 | 2023 | 2024 | 2025 |
Principal owners for this class
| Owner |
All patents
|
This class
|
|---|---|---|
| Taiwan Semiconductor Manufacturing Company, Ltd. | 41951 |
277 |
| Samsung Electronics Co., Ltd. | 143555 |
58 |
| Micron Technology, Inc. | 26169 |
27 |
| Sandisk Technologies Inc. | 4822 |
14 |
| Semiconductor Energy Laboratory Co., Ltd. | 11350 |
12 |
| SK Hynix Inc. | 11176 |
11 |
| Institute of Microelectronics, Chinese Academy of Sciences | 1370 |
9 |
| Versum Materials US, LLC | 636 |
8 |
| Intel Corporation | 46664 |
7 |
| IUCF-HYU (Industry-University Cooperation Foundation Hanyang University) | 1343 |
7 |
| Kioxia Corporation | 10262 |
7 |
| International Business Machines Corporation | 60806 |
6 |
| Sunrise Memory Corporation | 210 |
6 |
| Renesas Electronics Corporation | 6063 |
5 |
| Tokyo Electron Limited | 12477 |
5 |
| Ferroelectric Memory GmbH | 73 |
5 |
| Huawei Technologies Co., Ltd. | 110438 |
4 |
| The Regents of the University of Michigan | 4660 |
4 |
| Japan Science and Technology Agency | 1350 |
4 |
| IMEC VZW | 1580 |
4 |
| Other owners | 50 |