- All sections
- H - Electricity
- H10B - Electronic memory devices
- H10B 43/10 - EEPROM devices comprising charge-trapping gate insulators characterised by the top-view layout
Patent holdings for IPC class H10B 43/10
Total number of patents in this class: 2289
10-year publication summary
|
0
|
0
|
0
|
9
|
122
|
381
|
397
|
477
|
491
|
411
|
| 2017 | 2018 | 2019 | 2020 | 2021 | 2022 | 2023 | 2024 | 2025 | 2026 |
Principal owners for this class
| Owner |
All patents
|
This class
|
|---|---|---|
| Samsung Electronics Co., Ltd. | 158156 |
530 |
| Kioxia Corporation | 10840 |
366 |
| SK Hynix Inc. | 12534 |
300 |
| Micron Technology, Inc. | 27709 |
264 |
| Yangtze Memory Technologies Co., Ltd. | 3334 |
232 |
| Sandisk Technologies Inc. | 5442 |
231 |
| Taiwan Semiconductor Manufacturing Company, Ltd. | 48490 |
59 |
| Lodestar Licensing Group LLC | 1211 |
53 |
| Macronix International Co., Ltd. | 2496 |
48 |
| JPMorgan Chase Bank, N.A., AS The Agent | 2695 |
27 |
| Sunrise Memory Corporation | 218 |
23 |
| Sandisk Technologies LLC | 1423 |
19 |
| Monolithic 3D Inc. | 339 |
17 |
| Semiconductor Energy Laboratory Co., Ltd. | 11842 |
11 |
| Applied Materials, Inc. | 20438 |
11 |
| Winbond Electronics Corp. | 1439 |
10 |
| Institute of Microelectronics, Chinese Academy of Sciences | 1462 |
8 |
| IUCF-HYU (Industry-University Cooperation Foundation Hanyang University) | 1663 |
7 |
| NEO Semiconductor, Inc. | 71 |
6 |
| Intel Corporation | 47100 |
5 |
| Other owners | 62 |