A substrate processing method includes: (a) providing a substrate, (b) supplying a first processing gas containing an amino group and silicon to the substrate to form a first layer on the substrate, and (c) causing a second processing gas containing a metal halide-containing gas to react with the first layer to form a metal-containing film.
C23C 16/455 - Revêtement chimique par décomposition de composés gazeux, ne laissant pas de produits de réaction du matériau de la surface dans le revêtement, c.-à-d. procédés de dépôt chimique en phase vapeur [CVD] caractérisé par le procédé de revêtement caractérisé par le procédé utilisé pour introduire des gaz dans la chambre de réaction ou pour modifier les écoulements de gaz dans la chambre de réaction
C23C 16/30 - Dépôt de composés, de mélanges ou de solutions solides, p. ex. borures, carbures, nitrures
An etching method includes (a) forming a carbon-containing film on a surface of an electrostatic chuck in a chamber, (b) disposing a substrate on the carbon-containing film, and (c) etching the substrate with plasma. (a) includes (a1) supplying a precoat gas containing carbon and hydrogen into the chamber and controlling a pressure in the chamber to be 100 mTorr or more and 1,000 mTorr or less, and (a2) generating the plasma from the precoat gas.
H01L 21/683 - Appareils spécialement adaptés pour la manipulation des dispositifs à semi-conducteurs ou des dispositifs électriques à l'état solide pendant leur fabrication ou leur traitementAppareils spécialement adaptés pour la manipulation des plaquettes pendant la fabrication ou le traitement des dispositifs à semi-conducteurs ou des dispositifs électriques à l'état solide ou de leurs composants pour le maintien ou la préhension
H01J 37/32 - Tubes à décharge en atmosphère gazeuse
H01L 21/3065 - Gravure par plasmaGravure au moyen d'ions réactifs
3.
INFORMATION PROCESSING APPARATUS, INFORMATION PROCESSING METHOD, AND STORAGE MEDIUM
An information processing apparatus that displays operation statuses of one or more substrate processing apparatuses. The information processing apparatus includes: an acquisition unit that acquires history information of a plurality of apparatus states to which the plurality of substrate processing apparatuses have transitioned; and a display control unit that displays time zones during which the substrate processing apparatuses were in the plurality of apparatus states, in chronological order, based on the acquired history information such that each of the apparatus states is identifiable.
Atomic layer etching is provided. A method can include forming a mask layer over a semiconductive layer. The method can include forming an opening in the hardmask layer, oxidizing a surface of the semiconductive layer, depositing a sacrificial layer over the hardmask layer, and removing the oxidized surface of the semiconductive layer. The oxidation step, the deposition step, and the removal step can be repeated to extend the opening through the semiconductive layer.
This method for manufacturing a semiconductor device includes a step a), a step b), a step c), and a step d). In step a), a sacrificial material is embedded in a recess formed in a substrate. In step b), the recess in which the sacrificial material is embedded is covered with a first sealing film. In step c), at least one of a process of heating the substrate and a process of irradiating the substrate with plasma is performed to decompose the sacrificial material in the recess, and the sacrificial material in the recess is removed through the first sealing film. In step d), a second sealing film is formed on the first sealing film.
H01L 21/31 - Traitement des corps semi-conducteurs en utilisant des procédés ou des appareils non couverts par les groupes pour former des couches isolantes en surface, p. ex. pour masquer ou en utilisant des techniques photolithographiquesPost-traitement de ces couchesEmploi de matériaux spécifiés pour ces couches
C23C 16/455 - Revêtement chimique par décomposition de composés gazeux, ne laissant pas de produits de réaction du matériau de la surface dans le revêtement, c.-à-d. procédés de dépôt chimique en phase vapeur [CVD] caractérisé par le procédé de revêtement caractérisé par le procédé utilisé pour introduire des gaz dans la chambre de réaction ou pour modifier les écoulements de gaz dans la chambre de réaction
H01L 21/316 - Couches inorganiques composées d'oxydes, ou d'oxydes vitreux, ou de verres à base d'oxyde
6.
SILICON OXIDE FILM MODIFICATION METHOD AND SUBSTRATE PROCESSING DEVICE
A silicon oxide film modification method according to one aspect of the present disclosure comprises: a step for preparing a substrate on which a silicon oxide film has been formed; and a step for modifying the silicon oxide film. The step for modifying the silicon oxide film includes (a) a step for exposing a surface of the silicon oxide film to plasma that has been generated from a first gas including a hydrogen-containing gas, (b) a step for exposing the surface of the silicon oxide film to plasma that has been generated from a second gas not including a hydrogen-containing gas but including an inert gas, and (c) a step for exposing the surface of the silicon oxide film to plasma that has been generated from a third gas including a nitrogen-containing gas.
H01L 21/316 - Couches inorganiques composées d'oxydes, ou d'oxydes vitreux, ou de verres à base d'oxyde
H01L 21/31 - Traitement des corps semi-conducteurs en utilisant des procédés ou des appareils non couverts par les groupes pour former des couches isolantes en surface, p. ex. pour masquer ou en utilisant des techniques photolithographiquesPost-traitement de ces couchesEmploi de matériaux spécifiés pour ces couches
7.
HIGH ASPECT RATIO CARBON LAYER ETCH WITH IMPROVED THROUGHPUT AND PROCESS WINDOW
Various embodiments of improved process flows and methods are provided herein for etching high aspect ratio (HAR) features in carbon-containing hard mask layers. In the disclosed embodiments, the improved process flows and methods combine sidewall passivation and mask de-clogging steps in a single plasma process step to improve throughput when etching HAR features (such as vias, contact holes, trenches, etc.) within a carbon-containing hard mask layer. In doing so, the improved process flows and methods disclosed herein protect the sidewall surfaces of the carbon-containing hard mask layer and prevent bowing during the HAR etch process, while also reducing processing time and improving throughput.
To provide a feature for suppressing a decrease in a film forming speed when forming a metal film using a raw material having characteristics of decreased film forming speed over time. This method for forming a metal film comprises: a step for supplying a film-forming gas containing a metal halide serving as a raw material of a metal film to a substrate and reacting the film-forming gas to form the metal film on the surface of the substrate; a step for, when the step for forming the metal film has characteristics of decreased film forming speed over time, vacuum-exhausting the atmosphere in which the substrate is disposed while supplying a cleaning gas that reacts with a by-product generated by the reaction of the film-forming gas, after the supply of the film-forming gas is stopped; and a step for performing again the step for forming the metal film after the step for vacuum-exhausting is carried out.
C23C 16/08 - Revêtement chimique par décomposition de composés gazeux, ne laissant pas de produits de réaction du matériau de la surface dans le revêtement, c.-à-d. procédés de dépôt chimique en phase vapeur [CVD] caractérisé par le dépôt d'un matériau métallique à partir d'halogénures métalliques
C23C 16/455 - Revêtement chimique par décomposition de composés gazeux, ne laissant pas de produits de réaction du matériau de la surface dans le revêtement, c.-à-d. procédés de dépôt chimique en phase vapeur [CVD] caractérisé par le procédé de revêtement caractérisé par le procédé utilisé pour introduire des gaz dans la chambre de réaction ou pour modifier les écoulements de gaz dans la chambre de réaction
9.
MONITORING APPARATUS, SUBSTRATE PROCESSING APPARATUS, MONITORING METHOD, AND STORAGE MEDIUM
A monitoring apparatus for a substrate processing apparatus includes: an imaging unit that captures an image of a nozzle of the substrate processing apparatus and a surface of a substrate held by a substrate holder of the substrate processing apparatus; a monitoring data generation unit that generates monitoring video data based on imaging video data captured by the imaging unit during an execution of a substrate process performed by the substrate processing apparatus including a first process and a second process; and a monitoring condition changing unit that changes a generation condition of the monitoring video data during the execution of the substrate process so that at least a resolution or a number of frames of the monitoring video data during an execution of the second process is different from the monitoring video data during an execution of the first process.
A substrate-treatment method includes (a) providing a substrate at a stage, the substrate including a silicon nitride-containing film, in which a recess defined by a top, a side wall, and a bottom is formed, and a silicon film exposed from the bottom of the recess; (b) forming a silicon oxide film along the recess; (c) exposing the silicon oxide film to a plasma of a process gas containing a hydrogen gas, thereby modifying the silicon oxide film at the top and bottom of the recess selectively relative to the side wall by an anisotropic plasma treatment; and (d) selectively removing the modified silicon oxide film at the top and bottom of the recess through chemical etching without using a plasma, thereby retaining the silicon oxide film at the side wall of the recess.
C23C 16/458 - Revêtement chimique par décomposition de composés gazeux, ne laissant pas de produits de réaction du matériau de la surface dans le revêtement, c.-à-d. procédés de dépôt chimique en phase vapeur [CVD] caractérisé par le procédé de revêtement caractérisé par le procédé utilisé pour supporter les substrats dans la chambre de réaction
C23C 16/52 - Commande ou régulation du processus de dépôt
A method for forming a protective film at a peripheral edge portion of a substrate having patterning layers on a front surface includes: (A) supplying a coating solution for forming the protective film to the front surface of the substrate from a front-surface side coater while rotating the substrate to form the protective film at the peripheral edge portion of the substrate; (B), after the (A), supplying a cleaning solution to a rear surface of the substrate from a cleaning solution supplier while rotating the substrate to clean the rear surface and a peripheral end surface of the substrate; and (C), after the (B), supplying the coating solution to the rear surface of the substrate from a rear-surface side coater while rotating the substrate to form the protective film on the rear surface and the peripheral end surface of the peripheral edge portion of the substrate.
H01L 21/67 - Appareils spécialement adaptés pour la manipulation des dispositifs à semi-conducteurs ou des dispositifs électriques à l'état solide pendant leur fabrication ou leur traitementAppareils spécialement adaptés pour la manipulation des plaquettes pendant la fabrication ou le traitement des dispositifs à semi-conducteurs ou des dispositifs électriques à l'état solide ou de leurs composants
B08B 3/08 - Nettoyage impliquant le contact avec un liquide le liquide ayant un effet chimique ou dissolvant
12.
TUNGSTEN-BASED ADDITIVE FOR THROUGH-SUBSTRATE ETCHING
A process for adding tungsten during through-substrate etching includes forming a nitride layer over a semiconductor substrate, forming a mask layer over the nitride layer, creating an opening through the mask layer and the nitride layer, exposing the nitride layer to an etch gas comprising tungsten, and extending, with an etch process, the opening through the semiconductor substrate.
[Problem] To suppress the occurrence of metal contamination on, and adhesion of particles to, a zirconium film formed on a substrate. [Solution] Provided is a film formation post-processing method for performing a process on a chamber having a processing space in which is performed a film formation process for supplying a zirconium-chloride-containing processing gas in a state in which a substrate is accommodated and forming a film configured from zirconium on the substrate, at least a part of the chamber exposed to the processing space being configured from an aluminum-containing material, wherein the method has a processing gas discharge step for stopping the supply of the processing gas after the film formation process and discharging the processing gas from the processing space, and a hydrogen-nitride-based gas supply step for supplying a hydrogen-nitride-based gas into the processing space after the processing gas discharge step.
C23C 16/44 - Revêtement chimique par décomposition de composés gazeux, ne laissant pas de produits de réaction du matériau de la surface dans le revêtement, c.-à-d. procédés de dépôt chimique en phase vapeur [CVD] caractérisé par le procédé de revêtement
C23C 16/14 - Dépôt d'un seul autre élément métallique
H01L 21/285 - Dépôt de matériaux conducteurs ou isolants pour les électrodes à partir d'un gaz ou d'une vapeur, p. ex. condensation
H10D 64/60 - Électrodes caractérisées par leurs matériaux
14.
HOUSING DEVICE, SEMICONDUCTOR MANUFACTURING DEVICE, AND CASSETTE
This housing device can be connected to a vacuum transfer module to which a plurality of process modules are connected. The housing device houses a substrate-like sensor. The housing device has a case and an exhaust part. The case houses the substrate-like sensor. The exhaust part discharges air from the inside of the case. The vacuum transfer module has a connection part for connecting the process modules. The case can be connected to the vacuum transfer module via the connection part.
H01L 21/673 - Appareils spécialement adaptés pour la manipulation des dispositifs à semi-conducteurs ou des dispositifs électriques à l'état solide pendant leur fabrication ou leur traitementAppareils spécialement adaptés pour la manipulation des plaquettes pendant la fabrication ou le traitement des dispositifs à semi-conducteurs ou des dispositifs électriques à l'état solide ou de leurs composants utilisant des supports spécialement adaptés
H01L 21/677 - Appareils spécialement adaptés pour la manipulation des dispositifs à semi-conducteurs ou des dispositifs électriques à l'état solide pendant leur fabrication ou leur traitementAppareils spécialement adaptés pour la manipulation des plaquettes pendant la fabrication ou le traitement des dispositifs à semi-conducteurs ou des dispositifs électriques à l'état solide ou de leurs composants pour le transport, p. ex. entre différents postes de travail
15.
COMPUTER PROGRAM, INFORMATION PROCESSING METHOD, INFORMATION PROCESSING DEVICE, AND INFORMATION PROCESSING SYSTEM
Provided are a computer program, an information processing method, an information processing device, and an information processing system that can be expected to assist in the collection of information pertaining to an event in a device. A computer program according to the present embodiment causes a computer to execute a process for: acquiring information pertaining to the history of a handling of an event that has occurred in a device; using a language model to generate a natural-language question sentence relating to the acquired information; outputting the generated question sentence; acquiring an answer to the question sentence; and storing information pertaining to the acquired answer in a first database.
A method for fabricating a photonic integrated circuit (PIC), where the method includes providing a first PIC die including a first optical component covered by a first dielectric layer; performing a location specific ion beam planarizing of the first dielectric layer to form a first planarized surface; providing a second PIC die including a second optical component covered by a second dielectric layer; performing a planarizing of the second dielectric layer to form a second planarized surface; and bonding the first planarized surface of the first PIC die to the second planarized surface of the second PIC die to form a three dimensional (3D) stacked PIC die.
G02B 6/136 - Circuits optiques intégrés caractérisés par le procédé de fabrication par gravure
G02B 6/12 - Guides de lumièreDétails de structure de dispositions comprenant des guides de lumière et d'autres éléments optiques, p. ex. des moyens de couplage du type guide d'ondes optiques du genre à circuit intégré
G02B 6/13 - Circuits optiques intégrés caractérisés par le procédé de fabrication
According to an embodiment, a plasma processing system is proposed. The plasma processing system includes a plasma chamber; an RF source configured to generate a forward RF wave; an impedance matching circuit coupled to the RF source, the impedance matching circuit configured to provide matching for the RF source; a balun having unbalanced terminals coupled to the impedance matching circuit; and a resonant antenna configured to generate plasma within the plasma chamber, the resonant antenna being a spiral resonant antenna with an electrical length corresponding to a half-wavelength of a frequency of the forward RF wave, the resonant antenna comprising: a first tap along the spiral resonant antenna coupled to a first balanced terminal of the balun and a second tap along the spiral resonant antenna coupled to a second balanced terminal of the balun.
According to an embodiment, a semiconductor structure includes a first wafer comprising a device region, a first substrate, and a first bonding layer, the first substrate arranged in between the device region and the first bonding layer and having a plurality of vias coupling the device region to a surface of the first substrate attached to the first bonding layer. The first wafer having first cavities establishing a localized area designated for singulation of the first wafer. The structure further includes a sacrificial wafer attached to the first bonding layer of the first wafer. The first cavities extending through the second bonding layer of the sacrificial wafer. The first cavities extend through a first protective layer. A second protective layer is attached to the sacrificial wafer. Second cavities are vertically aligned with the first cavities and extending through the second protective layer and partially through the second substrate.
H01L 23/00 - Détails de dispositifs à semi-conducteurs ou d'autres dispositifs à l'état solide
H01L 21/683 - Appareils spécialement adaptés pour la manipulation des dispositifs à semi-conducteurs ou des dispositifs électriques à l'état solide pendant leur fabrication ou leur traitementAppareils spécialement adaptés pour la manipulation des plaquettes pendant la fabrication ou le traitement des dispositifs à semi-conducteurs ou des dispositifs électriques à l'état solide ou de leurs composants pour le maintien ou la préhension
Various embodiments of improved process flows and methods are provided herein for etching high aspect ratio (HAR) features in carbon-containing hard mask layers. In the disclosed embodiments, the improved process flows and methods combine sidewall passivation and mask de-clogging steps in a single plasma process step to improve throughput when etching HAR features (such as vias, contact holes, trenches, etc.) within a carbon-containing hard mask layer. In doing so, the improved process flows and methods disclosed herein protect the sidewall surfaces of the carbon-containing hard mask layer and prevent bowing during the HAR etch process, while also reducing processing time and improving throughput.
H01L 21/3065 - Gravure par plasmaGravure au moyen d'ions réactifs
H01L 21/033 - Fabrication de masques sur des corps semi-conducteurs pour traitement photolithographique ultérieur, non prévue dans le groupe ou comportant des couches inorganiques
A semiconductor device includes a plurality of first nanostructures extending along a first lateral direction with a first length, and spaced from one another along a vertical direction. The semiconductor device includes a plurality of second nanostructures extending along the first lateral direction with a second length, and spaced from one another along the vertical direction. The semiconductor device includes a dielectric layer interposed between the plurality of first nanostructures and the plurality of second nanostructures along the vertical direction. The second length is different from the first length.
H01L 29/06 - Corps semi-conducteurs caractérisés par les formes, les dimensions relatives, ou les dispositions des régions semi-conductrices
H01L 21/8238 - Transistors à effet de champ complémentaires, p.ex. CMOS
H01L 27/092 - Transistors à effet de champ métal-isolant-semi-conducteur complémentaires
H01L 29/08 - Corps semi-conducteurs caractérisés par les formes, les dimensions relatives, ou les dispositions des régions semi-conductrices avec des régions semi-conductrices connectées à une électrode transportant le courant à redresser, amplifier ou commuter, cette électrode faisant partie d'un dispositif à semi-conducteur qui comporte trois électrodes ou plus
H01L 29/423 - Electrodes caractérisées par leur forme, leurs dimensions relatives ou leur disposition relative ne transportant pas le courant à redresser, à amplifier ou à commuter
H01L 29/66 - Types de dispositifs semi-conducteurs
H01L 29/775 - Transistors à effet de champ avec un canal à gaz de porteurs de charge à une dimension, p.ex. FET à fil quantique
A transfer system used in a semiconductor manufacturing device in which a moving body having a magnet moves while being levitated from a floor by a magnetic force to transfer a substrate to a processing module for processing the substrate is provided. The transfer system comprises: a through-hole forming member having a through-hole formed in a vertical direction; a blocking member that blocks the through-hole to form the floor; a housing of which bottom wall serving as the floor and of which inside is evacuated to create a vacuum atmosphere in a moving area of the moving body that is formed on the floor; a plurality of electromagnets provided inside the floor to move the moving body; and magnetic sensors disposed inside the floor at positions overlapping the through-hole forming member and the blocking member in plan view, and configured to detect a magnetic force of the magnet.
H01L 21/677 - Appareils spécialement adaptés pour la manipulation des dispositifs à semi-conducteurs ou des dispositifs électriques à l'état solide pendant leur fabrication ou leur traitementAppareils spécialement adaptés pour la manipulation des plaquettes pendant la fabrication ou le traitement des dispositifs à semi-conducteurs ou des dispositifs électriques à l'état solide ou de leurs composants pour le transport, p. ex. entre différents postes de travail
H01F 7/20 - Électro-aimantsActionneurs comportant des électro-aimants sans armature
A substrate processing system includes: a processing module including a processing chamber and a substrate support provided inside the processing chamber, the substrate support having a substrate support surface and a ring support surface for supporting a ring; a vacuum transfer module connected to the processing module and including a transfer robot for transferring the ring; a ring storage module connected to the vacuum transfer module to store the ring; a temperature adjuster provided in the ring storage module to adjust a temperature of the ring; a controller that sequentially execute: adjusting the temperature of the ring by the temperature adjuster before loading the ring into the processing module; and transferring, by the transfer robot, the ring, the temperature of which has been adjusted by the temperature adjuster, so as to place the ring on the substrate support.
A method for fabricating a photonic integrated circuit (PIC), where the method includes providing a first PIC die including a first optical component covered by a first dielectric layer; performing a location specific ion beam planarizing of the first dielectric layer to form a first planarized surface; providing a second PIC die including a second optical component covered by a second dielectric layer; performing a planarizing of the second dielectric layer to form a second planarized surface; and bonding the first planarized surface of the first PIC die to the second planarized surface of the second PIC die to form a three dimensional (3D) stacked PIC die.
H01L 25/18 - Ensembles consistant en une pluralité de dispositifs à semi-conducteurs ou d'autres dispositifs à l'état solide les dispositifs étant de types prévus dans plusieurs différents groupes principaux de la même sous-classe , , , , ou
H01L 25/16 - Ensembles consistant en une pluralité de dispositifs à semi-conducteurs ou d'autres dispositifs à l'état solide les dispositifs étant de types couverts par plusieurs des sous-classes , , , , ou , p. ex. circuit hybrides
H01L 21/3065 - Gravure par plasmaGravure au moyen d'ions réactifs
H01L 23/00 - Détails de dispositifs à semi-conducteurs ou d'autres dispositifs à l'état solide
A method for overlay measurement is disclosed. The method includes receiving an image of a bonded wafer. The method includes generating, based on the image, a profile of the bonded wafer. The method includes adjusting, using the profile, an objective lens of a single-focus image-based infrared (IR) system to perform an overlay measurement of the bonded wafer.
G01N 21/95 - Recherche de la présence de criques, de défauts ou de souillures caractérisée par le matériau ou la forme de l'objet à analyser
G01N 21/88 - Recherche de la présence de criques, de défauts ou de souillures
G01N 21/3563 - CouleurPropriétés spectrales, c.-à-d. comparaison de l'effet du matériau sur la lumière pour plusieurs longueurs d'ondes ou plusieurs bandes de longueurs d'ondes différentes en recherchant l'effet relatif du matériau pour les longueurs d'ondes caractéristiques d'éléments ou de molécules spécifiques, p. ex. spectrométrie d'absorption atomique en utilisant la lumière infrarouge pour l'analyse de solidesPréparation des échantillons à cet effet
H01L 21/67 - Appareils spécialement adaptés pour la manipulation des dispositifs à semi-conducteurs ou des dispositifs électriques à l'état solide pendant leur fabrication ou leur traitementAppareils spécialement adaptés pour la manipulation des plaquettes pendant la fabrication ou le traitement des dispositifs à semi-conducteurs ou des dispositifs électriques à l'état solide ou de leurs composants
A method for generating a bias voltage includes generating a radio frequency (RF) sinusoidal wave voltage, generating a DC square wave voltage, and forming a bias waveform by synchronizing the RF sinusoidal wave voltage and the DC square wave voltage. The method further includes providing the bias waveform to an electrode of a plasma processing system.
A method for plasma processing includes providing a tailored hybrid waveform as a bias voltage to a bottom electrode of a plasma processing chamber, measuring a control variable of a plasma with a sensor of the plasma processing chamber, and adjusting the tailored hybrid waveform based on the control variable.
A substrate support includes a top plate including a dielectric material and an outer dielectric surface configured to support a substrate, printed heater sealed within the top plate, and a printed electrostatic chuck (ESC) circuit sealed within the top plate. A printed wiring layer may also be sealed within the top plate. The printed heater includes a heater material printed on a first interior dielectric surface of the top plate. The printed ESC circuit includes an electrically conductive material printed on a second interior dielectric surface of the top plate. When included, the printed wiring layer may include wiring traces printed on a third interior dielectric surface of the top plate. A dielectric base layer with vias electrically coupling the wiring traces to the printed heater may be included between the printed wiring layer and the printed heater.
H01L 21/683 - Appareils spécialement adaptés pour la manipulation des dispositifs à semi-conducteurs ou des dispositifs électriques à l'état solide pendant leur fabrication ou leur traitementAppareils spécialement adaptés pour la manipulation des plaquettes pendant la fabrication ou le traitement des dispositifs à semi-conducteurs ou des dispositifs électriques à l'état solide ou de leurs composants pour le maintien ou la préhension
H01L 21/67 - Appareils spécialement adaptés pour la manipulation des dispositifs à semi-conducteurs ou des dispositifs électriques à l'état solide pendant leur fabrication ou leur traitementAppareils spécialement adaptés pour la manipulation des plaquettes pendant la fabrication ou le traitement des dispositifs à semi-conducteurs ou des dispositifs électriques à l'état solide ou de leurs composants
Aspects of the present disclosure provide a semiconductor structure. For example, the semiconductor structure can include a wafer and luminescent thermometers formed on a surface of the wafer. The luminescent thermometers can be configured to receive incident light and emit light. The emitted light can have an intensity that depends on a temperature of a portion of the surface of the wafer where the luminescent thermometers are formed.
G01K 11/20 - Mesure de la température basée sur les variations physiques ou chimiques, n'entrant pas dans les groupes , , ou utilisant des matériaux thermo-luminescents
G01K 1/024 - Moyens d’indication ou d’enregistrement spécialement adaptés aux thermomètres pour l’indication à distance
G01K 1/08 - Dispositifs de protection, p. ex. étuis
G01K 1/14 - SupportsDispositifs de fixationDispositions pour le montage de thermomètres en des endroits particuliers
G01K 13/12 - Thermomètres spécialement adaptés à des fins spécifiques combinés avec des dispositifs d'échantillonnage pour mesurer les températures des échantillons du matériau
H01L 21/67 - Appareils spécialement adaptés pour la manipulation des dispositifs à semi-conducteurs ou des dispositifs électriques à l'état solide pendant leur fabrication ou leur traitementAppareils spécialement adaptés pour la manipulation des plaquettes pendant la fabrication ou le traitement des dispositifs à semi-conducteurs ou des dispositifs électriques à l'état solide ou de leurs composants
In the present invention, a semiconductor manufacturing apparatus comprises: a carrier block for carrying in and out a carrier; an atmosphere module including a plurality of atmospheric processing devices; and a vacuum module that includes a plurality of vacuum processing devices and that is positioned directly above the atmosphere module. The semiconductor manufacturing apparatus further comprises: an atmospheric processing conveyance path for delivering a wafer to an atmospheric processing device; and a vacuum processing conveyance path for delivering the wafer to a vacuum processing device. The atmospheric processing conveyance path and the vacuum processing conveyance path are connected to the carrier block.
Provided is a technology that suppresses the blockage of openings in a mask. Provided is an etching method including: (a) a step in which a substrate is provided inside of a chamber, the substrate includes a first film and a second film that defines openings on the first film, the first film is a multilayered film that includes a first layer including silicon and oxygen, and includes a second layer including silicon and nitrogen, and the second film includes a metal-containing film or a carbon-containing film; (b) a step in which a protective film is formed on the surface of the second film by plasma generated from a first processing gas which contains a deposition gas, and the pressure inside the chamber is controlled to 30 mTorr or less; and (c) a step in which the first film is etched via the second film on which the protective film has been formed, by using plasma generated from a second processing gas which contains a hydrogen fluoride gas.
This substrate processing system includes a vacuum transfer module, a control unit, a plurality of processing modules, an aligner, a storage unit, and a specification unit. The aligner includes a stage and an optical sensor. The stage is configured so that a ring member is placed on the stage. The optical sensor is configured to detect the shape of the ring member placed on the stage. The storage unit includes a table in which characteristic information is stored in association with an identifier of each of the plurality of processing modules. The characteristic information indicates the characteristics of each of the plurality of ring members. The specification unit extracts the characteristic information of the ring member from the shape of the ring member detected by the optical sensor, and refers to the table of the storage unit in order to specify a processing module, from among the plurality of processing modules, by which the ring member should be conveyed, such specification performed on the basis of the identifier stored in association with the characteristic information.
H01L 21/677 - Appareils spécialement adaptés pour la manipulation des dispositifs à semi-conducteurs ou des dispositifs électriques à l'état solide pendant leur fabrication ou leur traitementAppareils spécialement adaptés pour la manipulation des plaquettes pendant la fabrication ou le traitement des dispositifs à semi-conducteurs ou des dispositifs électriques à l'état solide ou de leurs composants pour le transport, p. ex. entre différents postes de travail
H01L 21/683 - Appareils spécialement adaptés pour la manipulation des dispositifs à semi-conducteurs ou des dispositifs électriques à l'état solide pendant leur fabrication ou leur traitementAppareils spécialement adaptés pour la manipulation des plaquettes pendant la fabrication ou le traitement des dispositifs à semi-conducteurs ou des dispositifs électriques à l'état solide ou de leurs composants pour le maintien ou la préhension
H01L 21/3065 - Gravure par plasmaGravure au moyen d'ions réactifs
The present invention provides a processing device which is capable of smoothly removing or detoxifying a material that is discharged during semiconductor manufacturing. A PFAS detoxification system (10) is a processing device which performs processing on a waste liquid that is discharged from a semiconductor manufacturing device, the processing device being provided with: a polymer filter (301) that separates the waste liquid into a polymer concentrated liquid which has a predetermined concentration or more of polymers and a monomer concentrated liquid which does not have the predetermined concentration or more of polymers and has a predetermined concentration or more of monomers; and a low-molecular-weight component processing unit which is composed of a monomer concentrator (11b), a circulation channel (16), filters (39, 40a, 40b), a first filtrate channel (17a), a first reservoir (20xa), a second filtrate channel (17b), a second reservoir (20×b), a third filtrate channel (18), and the like. The low-molecular-weight component processing unit performs processing for increasing the concentration of PFAS, which is a low-molecular-weight component, for the monomer concentrated liquid that has been separated by means of the polymer filter (301).
33 gas, on a wafer in which the upper surface of an SiCN film, on which a pattern is formed, of an insulating layer is covered with a hard mask, and the surface of the pattern and the surface of the hard mask are covered with a CF-based deposit, wherein the hard mask is formed of at least one of tungsten silicide (WSi) and tungsten silicide nitride (WSiN).
Aspects of the present disclosure provide a method of fabricating a semiconductor structure that includes a plurality of un-merged source-and-drain (S/D) contacts. For example, the method can include forming over a substrate a plurality of first channels that are stacked over each other and extend along a top surface of the substrate, forming on each of the first channels at one end thereof a first S/D contact, forming a first replacement dielectric material that covers the first S/D contacts, forming a first gate structure for each of the first channels; and replacing the first replacement dielectric material with a first interconnect that connects the first S/D contacts after the first gate structure is formed.
H10D 84/03 - Fabrication ou traitement caractérisés par l'utilisation de technologies basées sur les matériaux utilisant une technologie du groupe IV, p. ex. technologie au silicium ou au carbure de silicium [SiC]
H10D 84/40 - Dispositifs intégrés formés dans ou sur des substrats semi-conducteurs qui comprennent uniquement des couches semi-conductrices, p. ex. sur des plaquettes de Si ou sur des plaquettes de GaAs-sur-Si caractérisés par l'intégration d'au moins un composant couvert par les groupes ou avec au moins un composant couvert par les groupes ou , p. ex. l'intégration de transistors IGFET avec des transistors BJT
H10D 84/85 - Transistors IGFET complémentaires, p. ex. CMOS
H10D 48/00 - Dispositifs individuels non couverts par les groupes
H10D 64/27 - Électrodes ne transportant pas le courant à redresser, à amplifier, à faire osciller ou à commuter, p. ex. grilles
36.
SIDEWALL METAL CONTACT INTEGRATION THROUGH THE DIRECT ETCH OF A MERGED SOURCE-AND-DRAIN CONTACT
Aspects of the present disclosure provide a method of fabricating a semiconductor structure that includes a plurality of unmerged source-and-drain (S/D) contacts. For example, the method can include forming over a substrate a plurality of first channels that are stacked over each other and extend along a top surface of the substrate, forming a first merged S/D contact on the first channels, forming a first gate structure for each of the first channels, removing a portion of the first merged S/D contact such that a first remaining individual S/D contact is formed on each of the first channels at one end thereof after the first gate structure is formed, and forming a first interconnect that connects the first remaining individual S/D contacts.
Provided is a substrate transfer module that constitutes a semiconductor manufacturing apparatus for processing a substrate and transfers the substrate in a transfer space having a vacuum atmosphere, the substrate transfer module comprising: a chamber that defines the transfer space and includes a floor on which a tile is provided, the tile including an electromagnet for forming a magnetic field that acts on a magnet provided on a transfer body for transferring the substrate in the transfer space and moves the transfer body in a levitated state, wherein a coating film is formed on at least a surface of the tile contacting the transfer space to suppress release of contaminants from components that constitute the tile.
H01L 21/673 - Appareils spécialement adaptés pour la manipulation des dispositifs à semi-conducteurs ou des dispositifs électriques à l'état solide pendant leur fabrication ou leur traitementAppareils spécialement adaptés pour la manipulation des plaquettes pendant la fabrication ou le traitement des dispositifs à semi-conducteurs ou des dispositifs électriques à l'état solide ou de leurs composants utilisant des supports spécialement adaptés
H01F 27/32 - Isolation des bobines, des enroulements, ou de leurs éléments
H01L 21/677 - Appareils spécialement adaptés pour la manipulation des dispositifs à semi-conducteurs ou des dispositifs électriques à l'état solide pendant leur fabrication ou leur traitementAppareils spécialement adaptés pour la manipulation des plaquettes pendant la fabrication ou le traitement des dispositifs à semi-conducteurs ou des dispositifs électriques à l'état solide ou de leurs composants pour le transport, p. ex. entre différents postes de travail
There is a substrate processing apparatus comprising: a processing chamber; a placing table having a first contact surface on an opposite side to a placing surface on which a substrate is placed; a freezing device having a second contact surface and configured to cool the placing table; a rotation device configured to rotate the placing table; a lifting device configured to raise and lower the freezing device to bring the first contact surface and the second contact surface into contact with each other or separate the first contact surface and the second contact surface; a heat transfer gas supply space including the first contact surface of the placing table and the second contact surface of the freezing device and isolated from an inner space of the processing chamber; and a gas inlet port that supplies a heat transfer gas to the heat transfer gas supply space.
An information processing apparatus includes a grouping information generation unit that acquires a setting value for each processing step executed by a semiconductor manufacturing apparatus according to the setting value, and generates information for grouping processing steps executed according to the same setting value; a data extraction unit that extracts at least one second processing step that has a setting value identical to a setting value of a first processing step and that is executed before the first processing step when the setting value of the first processing step specified from a time when an abnormality occurred is included in the information for grouping; an analysis target section setting unit that sets the first processing step and the second processing step as an analysis target section; and a display control unit that displays a graph indicating an analysis result of the analysis target section.
G05B 19/418 - Commande totale d'usine, c.-à-d. commande centralisée de plusieurs machines, p. ex. commande numérique directe ou distribuée [DNC], systèmes d'ateliers flexibles [FMS], systèmes de fabrication intégrés [IMS], productique [CIM]
40.
SUBSTRATE PROCESSING APPARATUS AND SUBSTRATE PROCESSING METHOD INCLUDING A PRE-TREATMENT PROCESS OF SUPPLYING A HEATED FLUID TO A SECOND SURFACE OF A SUBSTRATE AND SUPPLYING A PRE-WETTING LIQUID TO A FIRST SURFACE OF THE SUBSTRATE, WHILE ROTATING THE SUBSTRATE
A substrate processing apparatus includes a substrate holder for holding a substrate having a first surface and a second surface in a horizontal posture; a rotational driver for rotating the substrate holder; a first fluid supply for supplying a fluid to the first surface; a second fluid supply for supplying a fluid to the second surface; and a controller. The controller performs: a pre-treatment process of supplying a heated fluid to the second surface and supplying a pre-wetting liquid to the first surface, while rotating the substrate at a first rotation speed; and a chemical liquid treatment process of performing, after the pre-treatment process is performed, a chemical liquid treatment on the first surface by supplying a chemical liquid to the first surface and concurrently supplying the heated fluid to the second surface intermittently, while rotating the substrate at a second rotation speed.
H01L 21/67 - Appareils spécialement adaptés pour la manipulation des dispositifs à semi-conducteurs ou des dispositifs électriques à l'état solide pendant leur fabrication ou leur traitementAppareils spécialement adaptés pour la manipulation des plaquettes pendant la fabrication ou le traitement des dispositifs à semi-conducteurs ou des dispositifs électriques à l'état solide ou de leurs composants
H01L 21/687 - Appareils spécialement adaptés pour la manipulation des dispositifs à semi-conducteurs ou des dispositifs électriques à l'état solide pendant leur fabrication ou leur traitementAppareils spécialement adaptés pour la manipulation des plaquettes pendant la fabrication ou le traitement des dispositifs à semi-conducteurs ou des dispositifs électriques à l'état solide ou de leurs composants pour le maintien ou la préhension en utilisant des moyens mécaniques, p. ex. mandrins, pièces de serrage, pinces
41.
PLASMA PROCESSING APPARATUS AND POWER SUPPLY SYSTEM
The purpose of the technique is to improve controllability of plasma formed on a substrate. A plasma processing apparatus includes a chamber; a substrate support that is disposed in the chamber and includes a lower electrode; an upper electrode that is disposed above the substrate support; a first RF power supply configured to supply a first RF signal having a first RF frequency to the upper electrode or the lower electrode; a second RF power supply configured to supply a second RF signal having a second RF frequency to the lower electrode; and a third RF power supply configured to supply a third RF signal having a third RF frequency to the lower electrode. Three RF power supplies supply RF signals having respective power levels in four periods in each cycle.
The present disclosure provides a plasma processing apparatus comprising: a plasma processing chamber; a substrate support; an electrode or an antenna; a radio frequency power supply; a power receiving coil electrically connected to the at least one power-consuming member; a power transmitting coil electromagnetically inductively coupled with the power receiving coil; a power transmitting unit electrically connected to the power transmitting coil to supply a power to the power transmitting coil; and a controller. The power transmitting unit includes a voltage detector and a current detector, and the controller is configured to determine a required power level corresponding to a parameter value including an input impedance obtained from the input voltage and the input current or a load resistance value of the at least one power-consuming member, and to control the power transmitting unit to output an output power having the required power level.
A mounting table includes a wafer mounting surface mounting a wafer, a ring mounting surface disposed at a radially outer side of the wafer mounting surface and mounting a first ring having a first engaging portion and a second ring having a second engaging portion to be engaged with the first engaging portion, a lifter pin, and a driving mechanism. The second ring has a through-hole extends to reach a bottom surface of the first engaging portion, and the ring mounting surface has a hole at a position corresponding to the through-hole. A lifter pin has a first holding part that fits into the through-hole and a second holding part that extends from the first holding part and has a part protruding from the first holding part. The lifter pin is accommodated in the hole, and a driving mechanism vertically moves the lifter pin.
H01L 21/687 - Appareils spécialement adaptés pour la manipulation des dispositifs à semi-conducteurs ou des dispositifs électriques à l'état solide pendant leur fabrication ou leur traitementAppareils spécialement adaptés pour la manipulation des plaquettes pendant la fabrication ou le traitement des dispositifs à semi-conducteurs ou des dispositifs électriques à l'état solide ou de leurs composants pour le maintien ou la préhension en utilisant des moyens mécaniques, p. ex. mandrins, pièces de serrage, pinces
H01J 37/32 - Tubes à décharge en atmosphère gazeuse
H01L 21/683 - Appareils spécialement adaptés pour la manipulation des dispositifs à semi-conducteurs ou des dispositifs électriques à l'état solide pendant leur fabrication ou leur traitementAppareils spécialement adaptés pour la manipulation des plaquettes pendant la fabrication ou le traitement des dispositifs à semi-conducteurs ou des dispositifs électriques à l'état solide ou de leurs composants pour le maintien ou la préhension
44.
SUBSTRATE PROCESSING APPARATUS AND SUBSTRATE PROCESSING METHOD
An apparatus includes: a tank storing a processing liquid; a circulation line; a branch line; a processing part for supplying the processing liquid to a substrate at the branch line; a discharge part for reducing a storage amount of the processing liquid; a supply part for supplying a new processing liquid to the tank; and a controller including: a first determination part for determining whether the storage amount is less than a lower limit value; a first replenishment controller for replenishing the processing liquid to the tank when the storage amount is less than the lower limit value; a calculation part for calculating a replenishment amount of the processing liquid; and a second replenishment controller for reducing the storage amount and replenishing the processing liquid to the tank when a calculation value of the replenishment amount is less than a set value.
H01L 21/67 - Appareils spécialement adaptés pour la manipulation des dispositifs à semi-conducteurs ou des dispositifs électriques à l'état solide pendant leur fabrication ou leur traitementAppareils spécialement adaptés pour la manipulation des plaquettes pendant la fabrication ou le traitement des dispositifs à semi-conducteurs ou des dispositifs électriques à l'état solide ou de leurs composants
B08B 13/00 - Accessoires ou parties constitutives, d'utilisation générale, des machines ou appareils de nettoyage
45.
INFORMATION PROCESSING METHOD, COMPUTER PROGRAM, AND INFORMATION PROCESSING APPARATUS
An information processing apparatus acquires a sensor value of a target apparatus, inputs the acquired sensor value of the target apparatus to a sensor value conversion model, acquires the sensor value of the reference apparatus output by the sensor value conversion model, inputs the acquired sensor value of the reference apparatus together with a desired target value to a control input value determination model, acquires the control input value of the reference apparatus output by the control input value determination model, inputs the acquired control input value of the reference apparatus to a control input value conversion model, acquires the control input value of the target apparatus output by the control input value conversion model, and controls the target apparatus, based on the acquired control input value of the target apparatus.
G05B 13/04 - Systèmes de commande adaptatifs, c.-à-d. systèmes se réglant eux-mêmes automatiquement pour obtenir un rendement optimal suivant un critère prédéterminé électriques impliquant l'usage de modèles ou de simulateurs
G05B 13/02 - Systèmes de commande adaptatifs, c.-à-d. systèmes se réglant eux-mêmes automatiquement pour obtenir un rendement optimal suivant un critère prédéterminé électriques
H01L 21/66 - Test ou mesure durant la fabrication ou le traitement
A method for observing a surface includes a) and b). At the a), a material including at least one or more solid luminescent dye molecules is accumulated in a region having an abnormal shape in a substrate or in a structure on the substrate. At the b), the region having the abnormal shape in the substrate or in the structure on the substrate is irradiated with illumination light to acquire the fluorescent image of the solid luminescent dye molecules.
There is provided a system for processing a substrate under a depressurized environment. The system comprises: a processing chamber configured to perform desired processing on a substrate; a transfer chamber having a transfer mechanism configured to import or export the substrate into or from the processing chamber; and a controller configured to control a processing process in the processing chamber. The transfer mechanism comprises: a fork configured to hold the substrate on an upper surface; and a sensor provided in the fork and configured to measure an internal state of the processing chamber. The controller is configured to control the processing process in the processing chamber on the basis of the internal state of the processing chamber measured by the sensor.
H01L 21/67 - Appareils spécialement adaptés pour la manipulation des dispositifs à semi-conducteurs ou des dispositifs électriques à l'état solide pendant leur fabrication ou leur traitementAppareils spécialement adaptés pour la manipulation des plaquettes pendant la fabrication ou le traitement des dispositifs à semi-conducteurs ou des dispositifs électriques à l'état solide ou de leurs composants
H01L 21/677 - Appareils spécialement adaptés pour la manipulation des dispositifs à semi-conducteurs ou des dispositifs électriques à l'état solide pendant leur fabrication ou leur traitementAppareils spécialement adaptés pour la manipulation des plaquettes pendant la fabrication ou le traitement des dispositifs à semi-conducteurs ou des dispositifs électriques à l'état solide ou de leurs composants pour le transport, p. ex. entre différents postes de travail
H01L 21/687 - Appareils spécialement adaptés pour la manipulation des dispositifs à semi-conducteurs ou des dispositifs électriques à l'état solide pendant leur fabrication ou leur traitementAppareils spécialement adaptés pour la manipulation des plaquettes pendant la fabrication ou le traitement des dispositifs à semi-conducteurs ou des dispositifs électriques à l'état solide ou de leurs composants pour le maintien ou la préhension en utilisant des moyens mécaniques, p. ex. mandrins, pièces de serrage, pinces
A method for overlay measurement is disclosed. The method includes receiving an image of a bonded wafer. The method includes generating, based on the image, a profile of the bonded wafer. The method includes adjusting, using the profile, an objective lens of a single-focus image-based infrared (IR) system to perform an overlay measurement of the bonded wafer.
H01L 21/66 - Test ou mesure durant la fabrication ou le traitement
G01B 11/27 - Dispositions pour la mesure caractérisées par l'utilisation de techniques optiques pour mesurer des angles ou des cônesDispositions pour la mesure caractérisées par l'utilisation de techniques optiques pour tester l'alignement des axes pour tester l'alignement des axes
Atomic layer etching is provided. A method can include forming a mask layer over a semiconductive layer. The method can include forming an opening in the hardmask layer, oxidizing a surface of the semiconductive layer, depositing a sacrificial layer over the hardmask layer, and removing the oxidized surface of the semiconductive layer. The oxidation step, the deposition step, and the removal step can be repeated to extend the opening through the semiconductive layer.
This plasma processing device includes: a chamber; a substrate support part in the chamber; a first gas introduction part configured to supply a first processing gas to the chamber; a second gas introduction part configured to supply a second processing gas to the chamber; and a control part. The control unit is configured to (a) provide a substrate including a silicon-containing film on a substrate support part, (b) generate plasma from the first processing gas supplied to the chamber from the first gas introduction part to form a film on a bevel part of the substrate, and (c) generate plasma from the second processing gas supplied to the chamber from the second gas introduction part to etch the silicon-containing film.
The present invention provides a technology for controlling formation of film on the surface of a recess in an etching target film. This substrate processing method comprises: (a) a step for providing, on a substrate support in a chamber, a substrate including an etching target film having a recess; (b) a step for exposing the substrate to a first processing gas containing a first halogen and hydrogen, to form, on the surface of the recess, a first layer that includes at least one of a halogenated surface and a surface to which hydrogen halide is adsorbed; and (c) a step for exposing the substrate to plasma generated from a second processing gas containing a second halogen and a group-14 element, to form, on the surface of the recess, a second layer containing the second halogen and the group-14 element.
The present invention provides a substrate processing method for forming a mask of a positive pattern. The substrate processing method includes: a step for preparing a substrate which has a photoresist film that contains a metal oxide containing a first metal element; a step for performing light exposure processing on the substrate so as to form an exposed part and an unexposed part in the photoresist film; a step for supplying a metal-containing gas which contains a second metal element that is different from the first metal element to the substrate so as to form a metal oxide film that contains the second metal element on the exposed surface of the unexposed part; and a step for removing the exposed part of the photoresist film using the metal oxide film as a mask.
According to an embodiment, a plasma processing system is proposed. The plasma processing system includes a plasma chamber; an RF source configured to generate a forward RF wave; an impedance matching circuit coupled to the RF source, the impedance matching circuit configured to provide matching for the RF source; a balun having unbalanced terminals coupled to the impedance matching circuit; and a resonant antenna configured to generate plasma within the plasma chamber, the resonant antenna being a spiral resonant antenna with an electrical length corresponding to a half-wavelength of a frequency of the forward RF wave, the resonant antenna comprising: a first tap along the spiral resonant antenna coupled to a first balanced terminal of the balun and a second tap along the spiral resonant antenna coupled to a second balanced terminal of the balun.
Various embodiments of processes and methods are provided herein for processing a semiconductor substrate. More specifically, improved processes and methods are provided for preventing damage to, or contamination on, a peripheral edge region and/or backside of a semiconductor substrate as the frontside of the substrate undergoes processing. In the disclosed embodiments, a sacrificial film is spin-on deposited within the peripheral edge region and/or along the backside surface before a process is performed on the frontside of the substrate. The sacrificial film protects the peripheral edge region and/or backside of the substrate and is removed from the substrate after processing.
A method includes of selective deposition on a metal-containing mask using a promoter includes treating metal-containing mask surfaces and exposed surfaces of a metal-free underlayer with the promoter to form functionalized mask surfaces, and treating the functionalized mask surfaces and the exposed surfaces of the metal-free underlayer with a precursor to selectively deposit a material on the functionalized mask surfaces. The promoter is configured to selectively functionalize the metal-containing mask surfaces to form the functionalized mask surfaces. The promoter is further configured to promote selective deposition of the material on the functionalized mask surfaces.
H01L 21/027 - Fabrication de masques sur des corps semi-conducteurs pour traitement photolithographique ultérieur, non prévue dans le groupe ou
H01L 21/033 - Fabrication de masques sur des corps semi-conducteurs pour traitement photolithographique ultérieur, non prévue dans le groupe ou comportant des couches inorganiques
H01L 21/02 - Fabrication ou traitement des dispositifs à semi-conducteurs ou de leurs parties constitutives
Aspects of the present disclosure provide a method for correcting an overlay error by shifting lithographic patterns to be formed on a wafer according to a bow measurement of the wafer. For example, the method can include receiving a first location at which one or more first semiconductor elements are to be formed on a first wafer, measuring the first wafer to identify a first bow measurement of the first wafer, calculating a second location that is shifted from the first location based on the first bow measurement, and forming the first semiconductor elements on the first wafer at the second location.
A method for generating a bias voltage includes generating a radio frequency (RF) sinusoidal wave voltage, generating a DC square wave voltage, and forming a bias waveform by synchronizing the RF sinusoidal wave voltage and the DC square wave voltage. The method further includes providing the bias waveform to an electrode of a plasma processing system.
A method of selective deposition on a metal-containing mask using a promoter includes treating metal-containing mask surfaces and exposed surfaces of a metal-free underlayer with the promoter to form functionalized mask surfaces, and treating the functionalized mask surfaces and the exposed surfaces of the metal-free underlayer with a precursor to selectively deposit a material on the functionalized mask surfaces. The promoter is configured to selectively functionalize the metal-containing mask surfaces to form the functionalized mask surfaces. The promoter is further configured to promote selective deposition of the material on the functionalized mask surfaces.
G03F 7/11 - Matériaux photosensibles caractérisés par des détails de structure, p. ex. supports, couches auxiliaires avec des couches de recouvrement ou des couches intermédiaires, p. ex. couches d'ancrage
C23C 16/04 - Revêtement de parties déterminées de la surface, p. ex. au moyen de masques
C23C 16/50 - Revêtement chimique par décomposition de composés gazeux, ne laissant pas de produits de réaction du matériau de la surface dans le revêtement, c.-à-d. procédés de dépôt chimique en phase vapeur [CVD] caractérisé par le procédé de revêtement au moyen de décharges électriques
C23C 16/52 - Commande ou régulation du processus de dépôt
Aspects of the present disclosure provide a semiconductor structure. For example, the semiconductor structure can include a wafer and luminescent thermometers formed on a surface of the wafer. The luminescent thermometers can be configured to receive incident light and emit light. The emitted light can have an intensity that depends on a temperature of a portion of the surface of the wafer where the luminescent thermometers are formed.
G01K 11/12 - Mesure de la température basée sur les variations physiques ou chimiques, n'entrant pas dans les groupes , , ou utilisant le changement de couleur, de translucidité ou de réflectance
H01L 21/67 - Appareils spécialement adaptés pour la manipulation des dispositifs à semi-conducteurs ou des dispositifs électriques à l'état solide pendant leur fabrication ou leur traitementAppareils spécialement adaptés pour la manipulation des plaquettes pendant la fabrication ou le traitement des dispositifs à semi-conducteurs ou des dispositifs électriques à l'état solide ou de leurs composants
There is provided an inspection apparatus for inspecting a device to be inspected. The device to be inspected is a back-illuminated imaging device in which light is incident from a back surface opposite to a side on which a wiring layer is provided, and is formed at an inspection object. The inspection apparatus comprises: a placing table. The placing table includes: a ceiling plate made of a light transmitting material and on which the inspection object is placed; a base member made of a light transmitting material, disposed to face the inspection object with the ceiling plate interposed therebetween, and forming a space to be exhausted with respect to the ceiling plate; and a light irradiation mechanism disposed to face the inspection object with the ceiling plate and the base member interposed therebetween, and configured to irradiate light toward the inspection object.
A substrate-processing apparatus includes a vacuum chamber; a rotation table provided in the vacuum chamber; a stage that is rotatable relative to the rotation table and includes a recess in which a substrate is to be placed; and a controller including a memory and a processor connected to the memory. A rotation shaft of the stage is provided at a position that is shifted from a center of the rotation table in a radial direction. The processor is configured to perform a film-forming process of forming a film on the substrate placed in the recess, while maintaining a state in which the rotation table and the stage are being rotated in opposite directions.
C23C 16/458 - Revêtement chimique par décomposition de composés gazeux, ne laissant pas de produits de réaction du matériau de la surface dans le revêtement, c.-à-d. procédés de dépôt chimique en phase vapeur [CVD] caractérisé par le procédé de revêtement caractérisé par le procédé utilisé pour supporter les substrats dans la chambre de réaction
A gas box includes: a first housing having a flow path for a fluid provided therein; a valve equipped with a rotator and configured to open or close the flow path with rotation of the rotator; a first opening provided in a first wall of the first housing; a coupling mechanism including an elastic body and a first engaging portion engaged with the rotator to connect the rotator and the first wall, the coupling mechanism being provided to face the first opening so as to rotate together with the rotator by torque applied from outside the first housing; and a first seal included in the coupling mechanism and configured to be biased from the first engaging portion toward the first wall by the elastic body to seal the first opening.
H01L 21/67 - Appareils spécialement adaptés pour la manipulation des dispositifs à semi-conducteurs ou des dispositifs électriques à l'état solide pendant leur fabrication ou leur traitementAppareils spécialement adaptés pour la manipulation des plaquettes pendant la fabrication ou le traitement des dispositifs à semi-conducteurs ou des dispositifs électriques à l'état solide ou de leurs composants
63.
SUBSTRATE PROCESSING METHOD AND SUBSTRATE PROCESSING SYSTEM
A substrate processing method includes: a preparation operation of preparing a substrate having an underlying film; a first film-formation operation of forming a first film on the underlying film, the first film being made of a material containing an element having a higher EUV absorption cross section than the underlying film; and a second film-formation operation of forming a second film on the first film, the second film being a metal-containing resist film.
H01L 21/033 - Fabrication de masques sur des corps semi-conducteurs pour traitement photolithographique ultérieur, non prévue dans le groupe ou comportant des couches inorganiques
G03F 7/00 - Production par voie photomécanique, p. ex. photolithographique, de surfaces texturées, p. ex. surfaces impriméesMatériaux à cet effet, p. ex. comportant des photoréservesAppareillages spécialement adaptés à cet effet
A film forming method includes: preparing a substrate including a resist film with an opening formed on a top surface; infiltrating a metal into at least an upper portion of the resist film by supplying a metal-containing gas containing the metal to the substrate; and selectively forming a protective film containing silicon and oxygen on the top surface of the resist film compared to a side surface and a bottom surface of the opening by supplying a precursor gas containing silanol to the substrate.
G03F 7/09 - Matériaux photosensibles caractérisés par des détails de structure, p. ex. supports, couches auxiliaires
G03F 7/11 - Matériaux photosensibles caractérisés par des détails de structure, p. ex. supports, couches auxiliaires avec des couches de recouvrement ou des couches intermédiaires, p. ex. couches d'ancrage
G03F 7/34 - Dépouillement selon l'image par transfert sélectif, p. ex. par arrachement
65.
SUBSTRATE EVALUATION METHOD AND SUBSTRATE PROCESSING APPARATUS
A substrate evaluation method includes: a measurement operation of measuring an absorbance spectrum in a wavenumber range including a peak of at least one of a LO (Longitudinal Optical) phonon or a TO (Transverse Optical) phonon by analyzing a substrate having an anisotropic structure formed thereon with an infrared spectroscopy analysis; and a derivation operation of deriving evaluation information about the anisotropic structure from the measured absorbance spectrum.
G01N 21/31 - CouleurPropriétés spectrales, c.-à-d. comparaison de l'effet du matériau sur la lumière pour plusieurs longueurs d'ondes ou plusieurs bandes de longueurs d'ondes différentes en recherchant l'effet relatif du matériau pour les longueurs d'ondes caractéristiques d'éléments ou de molécules spécifiques, p. ex. spectrométrie d'absorption atomique
G01N 21/25 - CouleurPropriétés spectrales, c.-à-d. comparaison de l'effet du matériau sur la lumière pour plusieurs longueurs d'ondes ou plusieurs bandes de longueurs d'ondes différentes
G01N 21/3563 - CouleurPropriétés spectrales, c.-à-d. comparaison de l'effet du matériau sur la lumière pour plusieurs longueurs d'ondes ou plusieurs bandes de longueurs d'ondes différentes en recherchant l'effet relatif du matériau pour les longueurs d'ondes caractéristiques d'éléments ou de molécules spécifiques, p. ex. spectrométrie d'absorption atomique en utilisant la lumière infrarouge pour l'analyse de solidesPréparation des échantillons à cet effet
G01N 21/84 - Systèmes spécialement adaptés à des applications particulières
66.
SUBSTRATE PROCESSING METHOD AND SUBSTRATE PROCESSING SYSTEM
A substrate processing method includes providing a substrate having an underlayer film and forming a metal-containing resist film on the underlayer film. The forming a metal-containing resist film includes forming a first resist film containing a metal on the underlayer film, and forming a second resist film containing the metal in a composition ratio different from the composition ratio of the metal in the first resist film on the first resist film.
H01L 21/033 - Fabrication de masques sur des corps semi-conducteurs pour traitement photolithographique ultérieur, non prévue dans le groupe ou comportant des couches inorganiques
G03F 7/00 - Production par voie photomécanique, p. ex. photolithographique, de surfaces texturées, p. ex. surfaces impriméesMatériaux à cet effet, p. ex. comportant des photoréservesAppareillages spécialement adaptés à cet effet
G03F 7/09 - Matériaux photosensibles caractérisés par des détails de structure, p. ex. supports, couches auxiliaires
G03F 7/095 - Matériaux photosensibles caractérisés par des détails de structure, p. ex. supports, couches auxiliaires ayant plus d'une couche photosensible
G03F 7/16 - Procédés de couchageAppareillages à cet effet
H01J 37/32 - Tubes à décharge en atmosphère gazeuse
A cooling device that cools a cooling target using a gas, includes: a housing configured to accommodate the cooling target and having a sidewall surrounding the cooling target; a plurality of supply holes arranged at an interval in the sidewall of the housing and serving as a flow path to introduce the gas from an external space of the housing to an interior of the housing; and a discharge path opened to the housing and configured to discharge the gas in the interior of the housing, wherein, to form a swirling flow rotating along the sidewall in the interior of the housing, each of the plurality of supply holes is formed toward a direction in which the gas is released along the swirling flow, when the housing is viewed in a plan view.
C23C 16/455 - Revêtement chimique par décomposition de composés gazeux, ne laissant pas de produits de réaction du matériau de la surface dans le revêtement, c.-à-d. procédés de dépôt chimique en phase vapeur [CVD] caractérisé par le procédé de revêtement caractérisé par le procédé utilisé pour introduire des gaz dans la chambre de réaction ou pour modifier les écoulements de gaz dans la chambre de réaction
C23C 16/06 - Revêtement chimique par décomposition de composés gazeux, ne laissant pas de produits de réaction du matériau de la surface dans le revêtement, c.-à-d. procédés de dépôt chimique en phase vapeur [CVD] caractérisé par le dépôt d'un matériau métallique
68.
SUBSTRATE PROCESSING METHOD AND SUBSTRATE PROCESSING APPARATUS
A substrate processing method for processing a substrate by supplying a gas from a gas supply part to a substrate processing space in a substrate processing apparatus, wherein the gas supply part includes a plurality of gas sources, a flow path that allows the gas to flow from the plurality of gas sources to the substrate processing space, a valve provided in the flow path to switch between opening and closing the flow of the gas, and a buffer tank provided in the flow path, pulse control is performed to pulse the flow of the gas by alternately repeating the opening and closing of the flow of the gas in the valve, and in the pulse control, a duration of the pulse control and a number of times of opening the flow of the gas during the duration are controlled to control the flow rate of the gas.
A substrate processing method includes forming a Ru film on a substrate by a non-electrolytic plating, performing a treatment using plasma of an inert gas on the substrate on which the Ru film is formed, and performing a reduction treatment on the substrate after the treatment using the plasma of the inert gas.
H01L 21/285 - Dépôt de matériaux conducteurs ou isolants pour les électrodes à partir d'un gaz ou d'une vapeur, p. ex. condensation
H01L 21/288 - Dépôt de matériaux conducteurs ou isolants pour les électrodes à partir d'un liquide, p. ex. dépôt électrolytique
H01L 21/3213 - Gravure physique ou chimique des couches, p. ex. pour produire une couche avec une configuration donnée à partir d'une couche étendue déposée au préalable
H01L 21/324 - Traitement thermique pour modifier les propriétés des corps semi-conducteurs, p. ex. recuit, frittage
H01L 21/67 - Appareils spécialement adaptés pour la manipulation des dispositifs à semi-conducteurs ou des dispositifs électriques à l'état solide pendant leur fabrication ou leur traitementAppareils spécialement adaptés pour la manipulation des plaquettes pendant la fabrication ou le traitement des dispositifs à semi-conducteurs ou des dispositifs électriques à l'état solide ou de leurs composants
A plasma processing apparatus is provided. The apparatus comprises: a plasma processing chamber; a substrate support arranged inside the plasma processing chamber, the substrate support including a lower electrode, an electrostatic chuck, and an edge ring disposed to surround a substrate mounted on the electrostatic chuck; an upper electrode arranged on an upper side of the substrate support; a source RF power supply configured to supply source RF power to generate plasma from a gas; a bias power supply configured to supply bias power; a DC power supply configured to apply a negative DC voltage; an RF filter electrically connected between the edge ring and the DC power supply, and including at least one variable passive element; and a controller configured to control the DC power supply and the variable passive element, and configured to control a voltage of the bias power within a permissible range.
A film formation method of forming, in a substrate having a first surface and a second surface, a film containing at least silicon and oxygen on the second surface in a selective manner with respect to the first surface, the film formation method includes: causing the first surface to be a nitrided surface made of nitride or a carbonized surface made of carbide by supplying a nitrogen-containing gas or a carbon-containing gas to the substrate; supplying a metal-containing catalyst to the substrate; and supplying a silicon precursor including silanol to the substrate.
37 - Services de construction; extraction minière; installation et réparation
Produits et services
Installation, maintenance and repair of semiconductor
manufacturing machines; installation, maintenance and repair
of semiconductor testing machines; installation, maintenance
and repair of flat panel display manufacturing machines;
providing information and consultancy related to
installation, maintenance and repair of semiconductor
manufacturing machines; providing information and
consultancy related to installation, maintenance and repair
of semiconductor testing machines; providing information and
consultancy related to installation, maintenance and repair
of flat panel display manufacturing machines.
A monitoring substrate for monitoring the inside of a substrate treatment device, the substrate comprising: a position detection sensor for detecting the position of the monitoring substrate; a camera for capturing an image of the inside, of the substrate treatment device, having a vacuum atmosphere; a light source for illuminating the inside of the substrate treatment device; a storage unit for storing an image captured by the camera; and a control unit for controlling the camera and the light source.
G06T 7/90 - Détermination de caractéristiques de couleur
H04N 7/18 - Systèmes de télévision en circuit fermé [CCTV], c.-à-d. systèmes dans lesquels le signal vidéo n'est pas diffusé
H04N 23/52 - Éléments optimisant le fonctionnement du capteur d'images, p. ex. pour la protection contre les interférences électromagnétiques [EMI] ou la commande de la température par des éléments de transfert de chaleur ou de refroidissement
H04N 23/56 - Caméras ou modules de caméras comprenant des capteurs d'images électroniquesLeur commande munis de moyens d'éclairage
H04N 23/74 - Circuits de compensation de la variation de luminosité dans la scène en influençant la luminosité de la scène à l'aide de moyens d'éclairage
74.
SUBSTRATE PROCESSING APPARATUS, SUBSTRATE PROCESSING METHOD, AND FILTER
A substrate processing apparatus according to the present disclosure to be used in patterning that is executed by exposing and developing a metal containing resist film formed on a substrate, wherein a chemical filter is arranged in the substrate processing apparatus, the chemical filter including a plurality of filter parts aligned towards a down-stream side on a flow path that supplies gas into the substrate processing apparatus to remove respective different substances in the gas, and the plurality of filter parts includes: an acid filter part that removes an acidic substance; and a base filter part that removes a basic substance.
C23C 16/44 - Revêtement chimique par décomposition de composés gazeux, ne laissant pas de produits de réaction du matériau de la surface dans le revêtement, c.-à-d. procédés de dépôt chimique en phase vapeur [CVD] caractérisé par le procédé de revêtement
H01L 21/67 - Appareils spécialement adaptés pour la manipulation des dispositifs à semi-conducteurs ou des dispositifs électriques à l'état solide pendant leur fabrication ou leur traitementAppareils spécialement adaptés pour la manipulation des plaquettes pendant la fabrication ou le traitement des dispositifs à semi-conducteurs ou des dispositifs électriques à l'état solide ou de leurs composants
H01L 21/677 - Appareils spécialement adaptés pour la manipulation des dispositifs à semi-conducteurs ou des dispositifs électriques à l'état solide pendant leur fabrication ou leur traitementAppareils spécialement adaptés pour la manipulation des plaquettes pendant la fabrication ou le traitement des dispositifs à semi-conducteurs ou des dispositifs électriques à l'état solide ou de leurs composants pour le transport, p. ex. entre différents postes de travail
75.
SUBSTRATE PROCESSING METHOD AND SUBSTRATE PROCESSING SYSTEM
A substrate processing method includes: (a) performing wet development on a metal-containing resist of a substrate; and (b) performing dry development on the metal-containing resist, wherein the metal-containing resist includes an exposed first region and an unexposed second region, wherein in (a), one of the first region and the second region is partially removed in a thickness direction of the one of the first region and the second region, and wherein in (b), a remaining portion of the one of the first region and the second region is removed.
In a mask pattern forming method, a resist film is formed over a thin film, the resist film is processed into resist patterns having a predetermined pitch by photolithography, slimming of the resist patterns is performed, and an oxide film is formed on the thin film and the resist patterns after an end of the slimming step in a film deposition apparatus by supplying a source gas and an oxygen radical or an oxygen-containing gas. In the mask pattern forming method, the slimming and the oxide film forming are continuously performed in the film deposition apparatus.
C23C 16/455 - Revêtement chimique par décomposition de composés gazeux, ne laissant pas de produits de réaction du matériau de la surface dans le revêtement, c.-à-d. procédés de dépôt chimique en phase vapeur [CVD] caractérisé par le procédé de revêtement caractérisé par le procédé utilisé pour introduire des gaz dans la chambre de réaction ou pour modifier les écoulements de gaz dans la chambre de réaction
G03F 7/40 - Traitement après le dépouillement selon l'image, p. ex. émaillage
H01L 21/02 - Fabrication ou traitement des dispositifs à semi-conducteurs ou de leurs parties constitutives
H01L 21/027 - Fabrication de masques sur des corps semi-conducteurs pour traitement photolithographique ultérieur, non prévue dans le groupe ou
H01L 21/033 - Fabrication de masques sur des corps semi-conducteurs pour traitement photolithographique ultérieur, non prévue dans le groupe ou comportant des couches inorganiques
H01L 21/3213 - Gravure physique ou chimique des couches, p. ex. pour produire une couche avec une configuration donnée à partir d'une couche étendue déposée au préalable
H01L 21/768 - Fixation d'interconnexions servant à conduire le courant entre des composants distincts à l'intérieur du dispositif
77.
PLASMA PROCESSING APPARATUS AND POWER SUPPLY SYSTEM
A technique for improving controllability of plasma generated on a substrate is provided. A plasma processing apparatus includes a chamber, a substrate support disposed inside the chamber and including a lower electrode, an upper electrode disposed above the substrate support, a first RF power supply for supplying a first RF signal having a first RF frequency to the upper electrode or the lower electrode, a second RF power supply for suppling a second RF signal having a second RF frequency to the lower electrode, and a third RF power supply for supplying a third RF signal having a third RF frequency to the lower electrode. The three RF power supplies supply RF signals having respective power levels in three periods in each cycle.
A substrate processing system comprising: a plasma processing apparatus; a depressurization transfer device having a transfer robot and an edge ring; and a controller is disclosed. The plasma processing apparatus includes: a depressurizable processing chamber; a substrate support table; a lifting mechanism; a gas supply part; and a plasma generating part. The controller controls following steps to be performed in following order: (a) performing plasma processing on the substrate and, then, applying a voltage of a first polarity to the electrode; (b) neutralizing the edge ring, by applying a voltage of a second polarity to the electrode while supplying a gas, and stopping the application of the voltage to the electrode after a predetermined period of time elapses; (c) separating the edge ring from a ring placing surface of the substrate support table; and (d) transferring the edge ring from the processing chamber to the depressurization pressure transfer device.
A stage includes a first member made of a material having a density of 5.0 g/cm3 or less, and a second member joined to the first member. The second member is made of a material having a linear expansion coefficient of 5.0×10−6/K or less and a thermal conductivity of 100 W/mK or more. A flow passage for a temperature control medium is formed in at least one of the first member and the second member.
H01J 37/32 - Tubes à décharge en atmosphère gazeuse
H01L 21/683 - Appareils spécialement adaptés pour la manipulation des dispositifs à semi-conducteurs ou des dispositifs électriques à l'état solide pendant leur fabrication ou leur traitementAppareils spécialement adaptés pour la manipulation des plaquettes pendant la fabrication ou le traitement des dispositifs à semi-conducteurs ou des dispositifs électriques à l'état solide ou de leurs composants pour le maintien ou la préhension
H01L 21/687 - Appareils spécialement adaptés pour la manipulation des dispositifs à semi-conducteurs ou des dispositifs électriques à l'état solide pendant leur fabrication ou leur traitementAppareils spécialement adaptés pour la manipulation des plaquettes pendant la fabrication ou le traitement des dispositifs à semi-conducteurs ou des dispositifs électriques à l'état solide ou de leurs composants pour le maintien ou la préhension en utilisant des moyens mécaniques, p. ex. mandrins, pièces de serrage, pinces
80.
Plasma Treatment Device and Plasma Treatment Method
A plasma processing apparatus, comprising: a processing chamber; a gas supply part; a first electrode and a second electrode facing each other; first and second high-frequency power supply for supplying high-frequency powers to the first and second electrodes; a sensor part for measuring a state of plasma in the processing chamber; and a controller, wherein the first electrode applies a high-frequency voltage to generate the plasma from the processing gas, the second high-frequency power supply is a broadband power supply that is capable of setting a frequency of the high-frequency power supplied to the second electrode, the controller obtains an ion plasma frequency for a specific type of ion based on the measurement result, and the controller applies a high-frequency voltage of the ion plasma frequency to the plasma by setting the frequency of the high-frequency power supplied from the second high-frequency power supply as the ion plasma frequency.
A substrate support includes a top plate including a dielectric material and an outer dielectric surface configured to support a substrate, printed heater sealed within the top plate, and a printed electrostatic chuck (ESC) circuit sealed within the top plate. A printed wiring layer may also be sealed within the top plate. The printed heater includes a heater material printed on a first interior dielectric surface of the top plate. The printed ESC circuit includes an electrically conductive material printed on a second interior dielectric surface of the top plate. When included, the printed wiring layer may include wiring traces printed on a third interior dielectric surface of the top plate. A dielectric base layer with vias electrically coupling the wiring traces to the printed heater may be included between the printed wiring layer and the printed heater.
H05K 3/10 - Appareils ou procédés pour la fabrication de circuits imprimés dans lesquels le matériau conducteur est appliqué au support isolant de manière à former le parcours conducteur recherché
A method for plasma processing includes providing a tailored hybrid waveform as a bias voltage to a bottom electrode of a plasma processing chamber, measuring a control variable of a plasma with a sensor of the plasma processing chamber, and adjusting the tailored hybrid waveform based on the control variable.
Various embodiments of processes and methods are provided herein for processing a semiconductor substrate. More specifically, improved processes and methods are provided for preventing damage to, or contamination on, a peripheral edge region and/or backside of a semiconductor substrate as the frontside of the substrate undergoes processing. In the disclosed embodiments, a sacrificial film is spin-on deposited within the peripheral edge region and/or along the backside surface before a process is performed on the frontside of the substrate. The sacrificial film protects the peripheral edge region and/or backside of the substrate and is removed from the substrate after processing.
Aspects of the present disclosure provide a method for correcting an overlay error by shifting lithographic patterns to be formed on a wafer according to a bow measurement of the wafer. For example, the method can include receiving a fist location at which one or more first semiconductor elements are to be formed on a first wafer, measuring the first wafer to identify a first bow measurement of the first wafer, calculating a second location that is shifted from the first location based on the first bow measurement, and forming the first semiconductor elements on the first wafer at the second location.
A method includes forming mandrels over a substrate. The mandrels include a first material having a first solubility-shifting mechanism. The method further includes absorbing a solubility-shifting agent into the mandrels to form absorbed regions in the mandrels and depositing a resist layer over the mandrels and the substrate. The resist layer includes a second material having a second solubility-shifting mechanism different from the first solubility-shifting mechanism. The method further includes diffusing a catalyst of/from the solubility-shifting agent into the resist layer to form solubility-shifted regions in the resist layer, and selectively removing the solubility-shifted regions of the resist layer. Remaining regions of the resist layer and the mandrels form a patterned mask over the substrate.
H01L 21/033 - Fabrication de masques sur des corps semi-conducteurs pour traitement photolithographique ultérieur, non prévue dans le groupe ou comportant des couches inorganiques
G03F 7/00 - Production par voie photomécanique, p. ex. photolithographique, de surfaces texturées, p. ex. surfaces impriméesMatériaux à cet effet, p. ex. comportant des photoréservesAppareillages spécialement adaptés à cet effet
G03F 7/09 - Matériaux photosensibles caractérisés par des détails de structure, p. ex. supports, couches auxiliaires
G03F 7/16 - Procédés de couchageAppareillages à cet effet
A method for forming a patterned mask can include providing first and second structures on a substrate, where the first structure includes a solubility shifting agent therein, and where the first structure is insoluble in a first developer containing an organic solvent, where the second structure includes a first polymer and a first reactant, and where the second structure is insoluble in the first developer containing the organic solvent, and diffusing at least a catalyst portion of the solubility shifting agent from the first structure into a first region of the second structure and chemically transforming the first region of the second structure to a converted region of a converted material to a first depth into the second structure using the catalyst portion of the solubility shifting agent as a chemical reaction catalyst, such that the converted material is soluble in the first developer containing the organic solvent.
G03F 7/038 - Composés macromoléculaires rendus insolubles ou sélectivement mouillables
G03F 7/00 - Production par voie photomécanique, p. ex. photolithographique, de surfaces texturées, p. ex. surfaces impriméesMatériaux à cet effet, p. ex. comportant des photoréservesAppareillages spécialement adaptés à cet effet
G03F 7/11 - Matériaux photosensibles caractérisés par des détails de structure, p. ex. supports, couches auxiliaires avec des couches de recouvrement ou des couches intermédiaires, p. ex. couches d'ancrage
G03F 7/32 - Compositions liquides à cet effet, p. ex. développateurs
H01L 21/027 - Fabrication de masques sur des corps semi-conducteurs pour traitement photolithographique ultérieur, non prévue dans le groupe ou
87.
ANTI-SPACER MASKING PROCESS USING SECOND SWITCHABLE POLYMER
A method for forming a patterned mask includes providing first and second structures. The first structure includes a first material including a first polymer, and a first converted region of a second material extending into the first structure. The second material has been chemically transformed from the first material by a catalyst portion of a first solubility shifting agent diffused into the first converted region. The second structure includes a third material including a second polymer with a functional group protected by a protecting group, and has an overburden region overlying the first converted region. The method further includes chemically transforming the overburden region to a second converted region of a fourth material using a catalyst portion of a second solubility shifting agent. The first and third materials are insoluble in a developer containing a polar solvent and the second and fourth materials are soluble in the developer.
G03F 7/039 - Composés macromoléculaires photodégradables, p. ex. réserves positives sensibles aux électrons
G03F 7/00 - Production par voie photomécanique, p. ex. photolithographique, de surfaces texturées, p. ex. surfaces impriméesMatériaux à cet effet, p. ex. comportant des photoréservesAppareillages spécialement adaptés à cet effet
G03F 7/32 - Compositions liquides à cet effet, p. ex. développateurs
88.
MATERIALS AND METHODS FOR FORMING PATTERNED MASK ON SUBSTRATE
A method includes depositing an overcoat in openings of a relief pattern supported by a substrate. The relief pattern includes a solubility-shifting agent. The overcoat and the relief pattern have different solubility-shifting mechanisms. The method further includes generating a catalyst by activating the solubility-shifting agent and diffusing the catalyst a predetermined distance from structures of the relief pattern into the overcoat to form soluble regions in the overcoat. The soluble regions is soluble in a predetermined developer while the relief pattern remains insoluble in the predetermined developer. The method further includes developing the substrate with the predetermined developer to remove the soluble regions of the overcoat.
A plasma processing apparatus includes: a plasma process chamber; a substrate support disposed within the plasma process chamber; an antenna disposed above the plasma process chamber; a source RF signal generator configured to generate a source RF signal; a bias signal generator configured to generate a bias signal; an upper electromagnet unit including a plurality of upper annular electromagnets arranged concentrically; a sidewall electromagnet unit including a plurality of sidewall annular electromagnets; an electromagnet excitation circuit configured to supply a current to at least one of the plurality of upper annular electromagnets or the plurality of sidewall annular electromagnets; and a controller configured to adjust the current supplied to at least one of the plurality of upper annular electromagnets or the plurality of sidewall annular electromagnets to control a plasma electron density distribution in the plasma process chamber.
A plasma processing apparatus is disclosed, including a chamber, a substrate support, a plasma generator, and a bias power supply. The substrate support is provided in the chamber. The plasma generator is configured to generate plasma from gas in the chamber. The bias power supply is configured to apply a sequence of a plurality of voltage pulses as an electrical bias to the substrate support. The bias power supply is configured to adjust a maximum voltage level of each of the voltage pulses by adjusting a length of an ON period of each of the voltage pulses.
A method for forming a patterned mask includes providing a patterned resist layer on a substrate and depositing an overcoat resist layer over the patterned resist layer. The patterned resist layer includes a first material including a first polymer. The overcoat resist layer includes a second material including a second polymer and a solubility shifting agent. The method further includes diffusing at least a catalyst portion of the solubility shifting agent from the overcoat resist layer into exterior regions of the patterned resist layer and chemically transforming the exterior regions of the patterned resist layer to anti-spacer regions of a third material to a first depth into the patterned resist layer. The method may also include removing the exterior regions to form an anti-spacer pattern having openings to the substrate corresponding to the exterior regions, at least part of which may have a critical dimension corresponding to the first depth.
G03F 7/00 - Production par voie photomécanique, p. ex. photolithographique, de surfaces texturées, p. ex. surfaces impriméesMatériaux à cet effet, p. ex. comportant des photoréservesAppareillages spécialement adaptés à cet effet
G03F 7/40 - Traitement après le dépouillement selon l'image, p. ex. émaillage
G03F 7/32 - Compositions liquides à cet effet, p. ex. développateurs
G03F 7/095 - Matériaux photosensibles caractérisés par des détails de structure, p. ex. supports, couches auxiliaires ayant plus d'une couche photosensible
H01L 21/027 - Fabrication de masques sur des corps semi-conducteurs pour traitement photolithographique ultérieur, non prévue dans le groupe ou
The present invention provides a plasma processing device in which wear and tear of components in a chamber has a reduced effect on plasma processing of substrates. The plasma processing device comprises: a chamber; a substrate support part; an edge ring; an upper electrode; a first gas supply part; an RF power source; a DC power source configured to apply a DC voltage to the edge ring; a first counter configured to count a first time according to the operating time of the RF power source and to reset the first time upon replacement of the upper electrode; a second counter configured to count a second time according to the operating time of the RF power source and to reset the second time upon replacement of the edge ring; a first processing unit configured to incrementally change the RF power and/or a first gas depending on the first time; and a second processing unit configured to incrementally change the DC voltage depending on the second time.
The present invention provides a technique for suppressing shape abnormalities in etching. This etching method comprises (a) a step for preparing a substrate having a silicon-containing film containing nitrogen and a mask on the silicon-containing film, the mask including at least one opening, and (b) a step for etching the silicon-containing film to form a recess, wherein (b) includes (b1) a step for generating a first plasma from a first processing gas containing fluorocarbon gas to etch the silicon-containing film, the fluorocarbon gas having the highest flow rate in the first processing gas, and (b2) a step for generating a second plasma from a second processing gas containing hydrogen fluoride gas to etch the silicon-containing film.
A processing system for mounting a plurality of types of dies on a target substrate, the system including a plurality of types of bonding devices for bonding the dies held by a carrier to the target substrate, wherein the accuracy of bonding the dies to the target substrate is different for the plurality of types of bonding devices.
H01L 21/60 - Fixation des fils de connexion ou d'autres pièces conductrices, devant servir à conduire le courant vers le ou hors du dispositif pendant son fonctionnement
H01L 21/304 - Traitement mécanique, p. ex. meulage, polissage, coupe
H01L 21/677 - Appareils spécialement adaptés pour la manipulation des dispositifs à semi-conducteurs ou des dispositifs électriques à l'état solide pendant leur fabrication ou leur traitementAppareils spécialement adaptés pour la manipulation des plaquettes pendant la fabrication ou le traitement des dispositifs à semi-conducteurs ou des dispositifs électriques à l'état solide ou de leurs composants pour le transport, p. ex. entre différents postes de travail
95.
PROCESSING LIQUID SUPPLY DEVICE AND PROCESSING LIQUID SUPPLY METHOD
The present disclosure explains a processing liquid supply device and a processing liquid supply method with which processing of a substrate can be continued even during replacement of a processing liquid. The processing liquid supply device comprises: first and second storage units; a circulation unit configured to return a processing liquid discharged from the first and second storage units to the first and second storage units through a circulation line; a detection unit; and a control unit. The control unit is configured to execute: a first process in which the circulation unit is controlled to stop transmission, from the first storage unit, of the processing liquid circulating through the circulation line and the first storage unit, and to transmit the processing liquid stored in the second storage unit to the circulation line to push out the processing liquid remaining in the circulation line to the first storage unit; and a second process in which when, after the first process, the detection unit detects that all of the processing liquid remaining in the circulation line has flowed into the first storage unit, the circulation unit is controlled to return the processing liquid stored in the second storage unit to the second storage unit through the circulation line.
In the present invention, an acquisition unit periodically acquires: the temperature of a stage on which a substrate is placed; the temperature of a cooling mechanism which is provided on the stage and cools the stage; and the amount of heat generated by a heating mechanism which is provided between a placement surface for placing the stage substrate and the cooling mechanism and heats the stage. A prediction unit, using a calculation formula for predicting the amount of heat input that flows from plasma into the substrate from the amount of heat generated by the heating mechanism, the temperature of the stage, the temperature of the cooling mechanism, a first-order time derivative of the temperature of the stage, and a first- or higher-order time derivative of the temperature of the cooling mechanism, predicts the amount of heat input that flows into the substrate from plasma, from the amount of heat generated by the heating mechanism, the temperature of the stage, and the temperature of the cooling mechanism that have been acquired, and the first-order time derivative of the temperature of the stage, and the first- or higher-order time derivative of the temperature of the cooling mechanism.
H01L 21/3065 - Gravure par plasmaGravure au moyen d'ions réactifs
H01L 21/683 - Appareils spécialement adaptés pour la manipulation des dispositifs à semi-conducteurs ou des dispositifs électriques à l'état solide pendant leur fabrication ou leur traitementAppareils spécialement adaptés pour la manipulation des plaquettes pendant la fabrication ou le traitement des dispositifs à semi-conducteurs ou des dispositifs électriques à l'état solide ou de leurs composants pour le maintien ou la préhension
H05H 1/46 - Production du plasma utilisant des champs électromagnétiques appliqués, p. ex. de l'énergie à haute fréquence ou sous forme de micro-ondes
97.
SUBSTRATE PROCESSING DEVICE AND SUBSTRATE TEMPERATURE CONTROL METHOD
An acquisition unit according to the present invention periodically acquires: the temperature of a stage on which a substrate is placed; the temperature of a cooling mechanism which is provided on the stage and which cools the stage; and a heat generation amount of a heating mechanism that is provided between the cooling mechanism and a placement surface of the stage on which the substrate is placed and that heats the stage. A prediction unit uses a calculation formula which predicts the temperature of the substrate from the heat generation amount of the heating mechanism, the temperature of the stage, the temperature of the cooling mechanism, the time derivative of the temperature of the stage, and the time derivative of the temperature of the cooling mechanism, so as to predict the temperature of the substrate from the heat generation amount of the heating mechanism, the temperature of the stage, the temperature of the cooling mechanism, the time derivative of the temperature of the stage, and the time derivative of the temperature of the cooling mechanism which have been acquired from the acquisition unit. A heat generation control unit controls the heat generation amount of the heating mechanism such that the temperature of the substrate predicted by the prediction unit becomes a prescribed temperature.
H01L 21/683 - Appareils spécialement adaptés pour la manipulation des dispositifs à semi-conducteurs ou des dispositifs électriques à l'état solide pendant leur fabrication ou leur traitementAppareils spécialement adaptés pour la manipulation des plaquettes pendant la fabrication ou le traitement des dispositifs à semi-conducteurs ou des dispositifs électriques à l'état solide ou de leurs composants pour le maintien ou la préhension
G05D 23/19 - Commande de la température caractérisée par l'utilisation de moyens électriques
H01L 21/3065 - Gravure par plasmaGravure au moyen d'ions réactifs
The present disclosure provides a method for removing residues adhering to a wafer surface after a resist pattern is formed. A substrate processing system (8) according to the present disclosure supplies a processing fluid, which is a gas or mist composed of an acid or an organic solvent, to a substrate (W) which has formed thereon a resist film that is exposed to light and is exposed to a developing fluid.
A substrate processing device that performs radical processing on a substrate includes: a chamber that serves to accommodate the substrate and has a main body section and a top wall section; a stage that supports the substrate in the chamber; a microwave source that is provided above the top wall section and supplies microwaves into the chamber; a gas supply section that supplies a processing gas for generating plasma by means of the microwaves to the area directly below the top wall section in the chamber; and a coolant supply section that includes a coolant flow path formed in the top wall section and a coolant supply source for supplying a coolant to the coolant flow path, and that allows a coolant for cooling the top wall section to a temperature at which it is possible to suppress the deactivation of radicals in the plasma to flow through the coolant flow path. The substrate processing device performs radical processing on the substrate by means of radicals in the plasma generated in the chamber by the microwaves.
This electrostatic chuck comprises a chuck main body part having an upper surface, at least one first gas supply path, and at least one second gas supply path. The upper surface has a plurality of bumps, a first annular groove, a second annular groove that surrounds the first annular groove, and an annular protrusion that is disposed between the first annular groove and the second annular groove, protrudes from the upper surface, and is lower than the bumps. The first annular groove communicates with the at least one first gas supply path through at least one first gas supply hole, and the second annular groove communicates with the at least one second gas supply path through at least one second gas supply hole.
H01L 21/683 - Appareils spécialement adaptés pour la manipulation des dispositifs à semi-conducteurs ou des dispositifs électriques à l'état solide pendant leur fabrication ou leur traitementAppareils spécialement adaptés pour la manipulation des plaquettes pendant la fabrication ou le traitement des dispositifs à semi-conducteurs ou des dispositifs électriques à l'état solide ou de leurs composants pour le maintien ou la préhension
H02N 13/00 - Embrayages ou dispositifs de maintien utilisant l'attraction électrostatique, p. ex. utilisant l'effet Johnson-Rahbek
