A film-forming method for a two-dimensional material layer is provided and includes providing a substrate in which a portion of an underlayer is exposed from a two-dimensional material layer formed over the underlayer; supplying a liquid precursor raw material including a transition metal to the substrate; and supplying a gas including a chalcogen element, thereby forming the two-dimensional material layer over the exposed underlayer.
C23C 16/30 - Deposition of compounds, mixtures or solid solutions, e.g. borides, carbides, nitrides
C23C 16/455 - Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into the reaction chamber or for modifying gas flows in the reaction chamber
C23C 16/458 - Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for supporting substrates in the reaction chamber
C23C 16/52 - Controlling or regulating the coating process
2.
SUBSTRATE PROCESSING METHOD, SUBSTRATE PROCESSING APPARATUS, AND SUBSTRATE PROCESSING SYSTEM
A substrate processing method includes providing a substrate including a patterned base film; exposing the substrate to a plasma generated from a first gas containing a modifying gas, thereby hydrophobizing a surface of the patterned base film, the surface including a top of the patterned base film; and exposing the substrate to a plasma generated from a second gas containing a raw material gas containing carbon and hydrogen, thereby selectively forming a carbon film over the hydrophobized top.
C23C 16/50 - Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges
C23C 16/52 - Controlling or regulating the coating process
A method for controlling a device includes receiving a request from a top level system with a first processor core of a first edge core, determining, how and when to respond to the request with the first processor core of the first edge core, and executing the request with a second processor core of the first edge core by operating a peripheral coupled with the second processor core.
An information processing method includes: acquiring, by an information processing apparatus, input data to a substrate processing apparatus, intermediate data measured in relation to substrate processing performed by the substrate processing apparatus based on the input data, and processing result data measured in relation to a processing result of the substrate processing; generating, by the information processing apparatus, a processing result prediction model to receive the intermediate data as an input and output a prediction value of the processing result data; estimating, by the information processing apparatus, intermediate data for improving prediction accuracy of the processing result prediction model; and estimating, by the information processing apparatus, input data for obtaining the estimated intermediate data.
A substrate processing apparatus incudes: a processing module for processing substrates placed on stages; a first transfer module including a first transfer robot for collectively transferring the substrates with respect to the processing module; a second transfer module including a second transfer robot for transferring the substrates with respect to a container; and a load lock module provided between the first and second transfer modules to accommodate the substrates transferred by the first or second transfer robot. The load lock module includes: stage regions arranged around a center of a rotary support; the rotary support including fixed support pins for supporting the substrates; and a drive mechanism for driving the rotary support in a rotational direction. When transferring the substrates between the load lock module and the first or second transfer module, the first or second transfer robot transfers the substrates with respect to the fixed support pins.
This processing device is used for grinding or polishing. The processing device comprises: a rotating disk to which a processing wheel used for grinding or polishing is attached; a spindle motor that rotates the rotating disk; a raising and lowering mechanism that raises and lowers the rotating disk together with the spindle motor; and a housing that accommodates the rotating disk. The housing has a ceiling, and an insertion opening into which the rotating disk is inserted is formed in the ceiling. The processing device comprises: a top cover that is placed on the ceiling and covers at least a part of the insertion opening; and a switching mechanism that switches the state of the top cover between a first state in which the top cover is placed on the ceiling without being raised and lowered in response to the raising and lowering of the rotating disk, and a second state in which the top cover is raised and lowered in response to the raising and lowering of the rotating disk.
B24B 7/04 - Machines or devices designed for grinding plane surfaces on work, including polishing plane glass surfacesAccessories therefor involving a rotary work-table
B24B 55/06 - Dust extraction equipment on grinding or polishing machines
B25J 9/06 - Programme-controlled manipulators characterised by multi-articulated arms
Provided are a seal member that improves sealability, and a substrate processing device. An annular seal member according to the present invention has a first annular portion that is composed of a first material, and a second annular portion that is composed of a second material which is different from the first material.
F16J 15/10 - Sealings between relatively-stationary surfaces with solid packing compressed between sealing surfaces with non-metallic packing
C23C 16/44 - Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
H01J 5/30 - Vacuum-tight joints between parts of vessel using packing material, e.g. sealing liquid or elastic insert
H05H 1/46 - Generating plasma using applied electromagnetic fields, e.g. high frequency or microwave energy
In one exemplary embodiment, this etching method includes: (a) a step for providing a substrate on a substrate support in a chamber, the substrate including a first film and a second film having an opening on the first film, the first film containing a metal element and a non-metal element; and (b) a step for exposing the substrate to first plasma generated from a first processing gas containing halogen, phosphorus, and oxygen to form a recess in the first film.
A method for fabricating semiconductor devices is disclosed. The method includes forming a first hardmask layer over a substrate. The method includes forming a second hardmask layer over the first hardmask layer. The method includes forming an opening extending through the second hardmask layer and the first hardmask layer. The method includes depositing a polymer layer, wherein the polymer layer includes at least a portion in the opening. The method includes etching the substrate using respective remaining portions of the first hardmask layer and the second hardmask layer, together with the polymer layer, as a mask.
Disclosed is a film forming method which includes: (a) a step for forming a first boron nitride film on a base region of a substrate; (b) a step for forming, on the first boron nitride film, a second boron nitride film that has a solid structure different from the solid structure of the first boron nitride film after the step (a); and (c) a step for alternately repeating the step (a) and the step (b). According to the film forming method, leakage current can be suppressed in the first boron nitride film and the second boron nitride film. In addition, by alternately laminating the first boron nitride film and the second boron nitride film, the effect of suppressing the leakage current is further enhanced.
Disclosed is a film forming method which includes: (a) a step for providing a substrate in a chamber; and (b) a step for forming a hexagonal boron nitride film on the surface of a base substrate that is included in the substrate by supplying a starting material gas, which contains a compound having a B-N bond, and a hydrogen plasma chemical species or an ammonia plasma chemical species generated from a processing gas that contains a hydrogen gas or an ammonia gas to the substrate. The step (b) forms a hexagonal boron nitride film which contains hexagonal boron nitride crystals oriented in a direction that is generally perpendicular to the surface of the base substrate.
This detachment device comprises: a holding unit that holds a second substrate of a bonded substrate in which a first substrate and the second substrate are joined; a plurality of suction bodies that suction the first substrate; a support member that supports the plurality of suction bodies; and an actuator that moves the support member to detach the first substrate, being suctioned by the plurality of suction bodies, from the second substrate. The support member is provided with a sensor capable of detecting a distortion of the support member or a force applied to the support member.
A wafer-type sensor according to an exemplary embodiment comprises a base substrate, a plurality of first sensors, and a circuit board. The plurality of first sensors have a plurality of first imaging units and a plurality of first reflective components. The plurality of first imaging units are provided on the base substrate. The plurality of first reflective components are disposed along the respective optical axes of the plurality of first imaging units on the base substrate, and change the optical axis direction. The circuit board is provided on the base substrate and controls the operation of the plurality of first imaging units.
[Problem] To easily promote the reaction to light of an imaging layer caused by EUV light. [Solution] This pattern forming method involves: preparing a substrate; forming an underlayer film by applying an organic-containing starting material that contains a metalloid or non-metal group 14 element on the substrate; subjecting the underlayer film to rare gas or hydrogen plasma treatment; forming an imaging layer by applying a photoresist to the plasma-treated underlayer film; partially causing the imaging layer to react to light by partially irradiating the imaging layer with light; and forming a pattern by removing the reacted portion or a portion other than the reacted portion of the imaging layer.
G03F 7/11 - Photosensitive materials characterised by structural details, e.g. supports, auxiliary layers having cover layers or intermediate layers, e.g. subbing layers
This electrostatic chuck includes a dielectric member having a substrate support surface, and an electrostatic electrode disposed below the substrate support surface in the dielectric member. The dielectric member includes a first upper region disposed between the substrate support surface and the electrostatic electrode, and a second region disposed between the substrate support surface and the electrostatic electrode and disposed outside the first upper region. The first upper region has a first dielectric constant, and the second upper region has a second dielectric constant larger than the first dielectric constant.
The present invention provides a plasma processing system comprising: a plasma processing chamber; an exhaust unit for exhausting the plasma processing chamber, the exhaust unit being equipped with a pressure regulation valve that is provided in a path via which a gas inside the plasma processing chamber is discharged and that controls the exhaust flow rate; and a control unit that controls the pressure regulation valve so as to control the pressure in the plasma processing chamber. When changing the pressure from a first pressure to a second pressure, the control unit changes, on the basis of a first function, a setting value from a first pressure value that results in the first pressure to a second pressure value that results in the second pressure, thereby controlling the pressure regulation valve such that the pressure equals the setting value while causing the pressure to adhere to the setting value.
A substrate processing apparatus, includes: a rotary holder configured to hold and rotate a substrate; an arm configured to hold nozzles; a driver configured to drive the arm so that the nozzles move between a standby position and a processing position; a capturer configured to capture an image of the nozzles; a supplier configured to supply processing liquids to the nozzles; and a controller. The controller is configured to perform: a first process of causing the capturer to capture images of the nozzles located at the processing position; a second process of detecting tip end portions of the nozzles; a third process of detecting whether a droplet is hanging from an injection port of the tip end portions; a fourth process of calculating a height of the droplet; and a fifth process of determining whether an abnormality exists based on the height.
A semiconductor device includes backside power rails over a bulk semiconductor material, a first bonding dielectric layer over the backside power rails, a first tier of transistors over the first bonding dielectric layer, a second bonding dielectric layer over the first tier of transistors, and a second tier of transistors over the second bonding dielectric layer. The first tier of transistors includes first channel structures having a first epitaxially grown semiconductor material. The second tier of transistors includes second channel structures having a second epitaxially grown semiconductor material. The backside power rails are spaced apart from the first tier of transistors by the first bonding dielectric layer. The first tier of transistors is spaced apart from the second tier of transistors by the second bonding dielectric layer.
A method of operating a plasma processing apparatus includes: executing a first plasma process which simulates a plasma processing of a product substrate; executing a second plasma process with a higher electron temperature and a higher electron density than an electron temperature and an electron density in the first plasma process; and measuring, by a probe device, data representing a state of plasma generated during the execution of at least one of the first plasma process or the second plasma process and determining whether the plasma processing of the product substrate can be started based on the measured data.
In-situ hybrid bonding test measurements are provided. A method includes providing a plurality of first contacts of a daisy chain structure on a first substrate and a plurality of second contacts of the daisy chain structure on a second substrate, the plurality of second contacts configured to align with the plurality of first contacts, respectively. The method includes annealing the first substrate and the second substrate to electrically couple the plurality of first contacts to the plurality of second contacts, respectively. The method includes detecting, while annealing the first substrate and the second substrate, a resistance between a first terminal contact of the daisy chain structure and a second terminal contact of the daisy chain structure. The method includes adjusting at least one of an annealing time or an annealing temperature based on the resistance.
H01L 21/66 - Testing or measuring during manufacture or treatment
H01L 21/67 - Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereofApparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components
H01L 21/768 - Applying interconnections to be used for carrying current between separate components within a device
21.
METHODS FOR WET ATOMIC LAYER ETCHING OF TITANIUM NITRIDE USING HALOGENATION
Various embodiments of methods are provided for etching titanium nitride (TiN) and other transition metal nitride materials in a wet ALE process. The methods disclosed herein use a wide variety of wet etch chemistries to: (a) halogenate a TiN surface and form a self-limiting, titanium halide or titanium oxyhalide passivation layer in a surface modification step of the wet ALE process, and (b) selectively remove the titanium halide or titanium oxyhalide passivation layer in a dissolution step of the wet ALE process. In the embodiments disclosed herein, a surface modification solution containing a halogenation agent dissolved in non-aqueous solvent is used to form a self-limiting, titanium halide or titanium oxyhalide passivation layer, which is selectively removed in an acidic dissolution solution via reactive dissolution.
This observation method includes step a1) and step a2). In step a1), a pattern is formed on a substrate by using an organic material having a crystallization-induced emission pigment mixed therein. In step a2), the organic material is irradiated with light including ultraviolet rays, and a fluorescence image based on a light emission signal from the organic material is acquired.
According to one embodiment of the present disclosure, a film formation method for forming a silicon oxide film comprises (a) a step for supplying a silicon source gas containing a silicon-containing compound represented by formula (1) to a substrate, and (b) a step for supplying an oxidizing gas to the substrate, wherein the step (a) and the step (b) are alternately performed. In formula (1), R1, R2, and R3 are hydrogen atoms or linear, branched, or cyclic alkyl groups, and R4, R5, and R6 are linear, branched, or cyclic alkyl groups.
This plasma processing system comprises: a chamber; a substrate support unit disposed in the chamber; a gas supply unit configured to supply a processing gas into the chamber; a plasma generation unit configured to generate plasma from the processing gas in the chamber and execute plasma processing on a substrate on the substrate support unit; a luminescence intensity measurement unit configured to measure the luminescence intensity of a specific wavelength component included in the plasma generated in the chamber during the plasma processing; an electron density measurement unit configured to measure the electron density of the plasma generated in the chamber during the plasma processing; and an end point detection unit configured to detect the end point of the plasma processing on the basis of a change over time in the correlation between the luminescence intensity and the electron density that are measured at the same timing.
In one exemplary embodiment, a substrate processing method comprises: (a) a step for placing a silicon substrate on a substrate support part in a chamber, the silicon substrate having a substrate body and a mask on the substrate body, the mask providing an opening, and the silicon substrate having a bevel which is at least partly exposed; (b) a step for forming a protective film on the silicon substrate, the protective film having a first thickness on the substrate body at the bottom of the opening and a second thickness larger than the first thickness on the bevel; and (c) a step for dicing the silicon substrate through the opening by means of plasma generated from a processing gas containing a halogen-containing gas.
A method for fabricating semiconductor devices is disclosed. The method includes forming a first hardmask layer over a substrate. The method includes forming a second hardmask layer over the first hardmask layer. The method includes forming an opening extending through the second hardmask layer and the first hardmask layer. The method includes depositing a polymer layer, wherein the polymer layer includes at least a portion in the opening. The method includes etching the substrate using respective remaining portions of the first hardmask layer and the second hardmask layer, together with the polymer layer, as a mask.
A combined substrate, in which a first substrate having at least a device layer and a first bonding film formed on a front surface thereof and a second substrate having at least a second bonding film formed on a front surface thereof are bonded to each other, is provided. An adhesion-reduced region formation film, whose adhesion to the first substrate is lower than adhesion to the first bonding film, is formed on the front surface of the first substrate to be located radially outward of a periphery removal starting point in the first substrate.
B23K 26/53 - Working by transmitting the laser beam through or within the workpiece for modifying or reforming the material inside the workpiece, e.g. for producing break initiation cracks
Substrate processing apparatus includes: processing chamber; mounting table situated in processing chamber and on which substrate is mounted; gas supply mechanism facing mounting table and supplying processing gas to substrate; processing region formed between mounting table and gas supply mechanism; gas exhaust region via which gas is exhausted by gas exhaust part; first gas exhaust path that is formed in gap between mounting table and gas supply mechanism and through which processing gas flows from processing region to gas exhaust region; second gas exhaust path provided in gas supply mechanism and connecting processing region to gas exhaust region such that processing gas can flow; third gas exhaust path through which processing gas is exhausted from gas exhaust region; and controller. Controller adjusts substrate processing condition based on gap between mounting table and gas supply mechanism, supply conditions of processing gas supplied from gas supply mechanism, and pressure in processing chamber.
A substrate processing apparatus comprises a drying device configured to dry a processing surface of at least one substrate, a holder configured to hold the at least one substrate dried by the drying device, and an irradiator configured to irradiate the at least one substrate held by the holder with infrared light.
A plasma processing apparatus includes: a chamber; a substrate support disposed in the chamber, the substrate support including a lower electrode; an edge ring disposed to surround a substrate on the substrate support; an upper electrode disposed above the substrate support; a first RF power supply; a first DC power supply; and a controller configured to cause: (a) starting supply of a first RF power from the first RF power supply to the upper electrode or the lower electrode; and (b) after (a), starting the application of a first DC voltage from the first DC power supply to the edge ring when a first delay time elapses.
A film forming method of forming a metal wiring on a silicon-based substrate to be processed, by forming a contact made of a metal silicide at a bottom portion of a pattern as an opening in an insulating film of the substrate while forming a metal film inside the pattern, includes: a first film formation process of forming a first metal film inside the pattern; a film thickness adjustment process of adjusting a film thickness of the formed first metal film; and a second film formation process of forming a second metal film on the first metal film by using a raw material gas, wherein in the film thickness adjustment process, the formed first metal film is etched by using the raw material gas.
C23C 16/04 - Coating on selected surface areas, e.g. using masks
C23C 16/02 - Pretreatment of the material to be coated
C23C 16/14 - Deposition of only one other metal element
C23C 16/455 - Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into the reaction chamber or for modifying gas flows in the reaction chamber
C23C 16/505 - Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges using radio frequency discharges
A method of processing a substrate includes: substituting a functional group with a hydroxyl group by heating a substrate on which a SiN film containing a silicon compound having the functional group composed of nitrogen and hydrogen is formed while supplying a first processing gas containing at least one of H2O2 or H2O to the substrate; and subsequently obtaining a SiO film by heating the substrate to desorb the hydrogen from the silicon compound while supplying, in a plasma state, a second processing gas including at least one of O2 or O3 to the substrate.
C23C 16/455 - Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into the reaction chamber or for modifying gas flows in the reaction chamber
C23C 16/52 - Controlling or regulating the coating process
Aspects of the present disclosure provide a wafer bonding system, which, for example, can include a wafer bonding tool configured to bond a first wafer and a second wafer to each other in accordance with a first wafer bonding recipe to produce a first post-bond wafer, a metrology tool integrated with the wafer bonding tool, and a tool controller coupled to the wafer bonding tool and the metrology tool. The metrology tool can be configured to measure a physical parameter of the first wafer. The physical parameter of the first wafer representing information relates to topographical features of the first wafer. The tool controller can have a model of a wafer bonding process. The model can include an input indicative of the physical parameter of the first wafer and configured to generate the first wafer bonding recipe based, at least in part, on the physical parameter of the first wafer.
This processing system comprises a processing device, a maintenance device, and a third control circuit. The processing device has: a drive mechanism to which is attached a processing wheel that is used for grinding or polishing; and a first control circuit. The maintenance device has: a conveyance robot which travels on a travel path that is set in the surroundings of the processing device and which conveys the processing wheel; a maintenance robot which moves together with the conveyance robot and which performs maintenance on the processing device; and a second control circuit. The first control circuit performs control for sending, to the third control circuit, a processing wheel change command that specifies the location of the drive mechanism and the type of the processing wheel. Upon receiving the change command from the first control circuit, the third control circuit performs control to send the change command to the second control circuit. Upon receiving the change command from the third control circuit, the second control circuit performs control for conveying the processing wheel of the type specified in the change command to the drive mechanism at the location specified in the change command.
In one exemplary embodiment, this substrate processing method includes: (a) a step of providing a substrate on a substrate support in a chamber, the substrate including a film and a metal-containing mask on the film, the metal-containing mask including at least one opening, and the substrate including halogen; and (b) a step of exposing the substrate to a treatment gas or plasma generated from the treatment gas to remove the halogen. In (b), the temperature of the substrate support is lower than 160°C.
This maintenance device performs maintenance for a processing device having a drive mechanism to which is attached a processing wheel used for grinding or polishing. The maintenance device has a holder for holding a cleaning wheel that wipes the attachment surface of the drive mechanism where the processing wheel is attached.
B24B 55/06 - Dust extraction equipment on grinding or polishing machines
B23Q 3/155 - Arrangements for automatic insertion or removal of tools
B23Q 3/157 - Arrangements for automatic insertion or removal of tools of rotary tools
B23Q 11/00 - Accessories fitted to machine tools for keeping tools or parts of the machine in good working condition or for cooling workSafety devices specially combined with or arranged in, or specially adapted for use in connection with, machine tools
B23Q 13/00 - Equipment for use with tools or cutters when not in operation, e.g. protectors for storage
B24B 45/00 - Means for securing grinding wheels on rotary arbors
Provided are a computer program, an information processing method, and an information processing device that can be expected to detect various patterns from a target image without preliminarily performing machine learning of a detection target pattern. A computer program according to an embodiment of the present invention causes a computer to execute a process for detecting, from a target image obtained by imaging a substrate subjected to substrate processing, a prescribed pattern formed on the substrate. The computer: acquires condition information related to a detection target pattern; extracts one or more pattern candidates from the target image on the basis of the acquired condition information; deletes a pattern candidate from the extracted one or more pattern candidates on the basis of comparison between the condition information and each of the pattern candidates; and outputs one or more pattern candidates that have not been deleted as a detection result of the pattern.
G01N 23/2251 - Investigating or analysing materials by the use of wave or particle radiation, e.g. X-rays or neutrons, not covered by groups , or by measuring secondary emission from the material using electron or ion microprobes using incident electron beams, e.g. scanning electron microscopy [SEM]
G01N 23/04 - Investigating or analysing materials by the use of wave or particle radiation, e.g. X-rays or neutrons, not covered by groups , or by transmitting the radiation through the material and forming images of the material
38.
SUBSTRATE PROCESSING METHOD, SUBSTRATE PROCESSING DEVICE, AND SUBSTRATE PROCESSING SYSTEM
In one exemplary embodiment, a substrate processing method comprises: (a) a step for providing a substrate, the substrate including a silicon-containing film and a mask that is formed on the silicon-containing film and includes an opening, the silicon-containing film being exposed at the bottom of the opening; (b) a step for forming a metal-containing film on the mask and on the silicon-containing film exposed at the bottom; (c) a step for exposing the substrate to a first plasma generated from a first processing gas that contains a halogen-containing gas to etch the metal-containing film formed on the silicon-containing film; and (d) a step for exposing the substrate to a second plasma generated from a second processing gas that contains a hydrogen halide gas to etch the silicon-containing film.
A substrate processing system according to the present disclosure comprises a vacuum transport module, a plurality of process modules, and at least one common pipe. The vacuum transport module includes a vacuum transport chamber. Each of the plurality of process modules includes a processing chamber connected to the vacuum transport chamber. Each of the plurality of process modules is configured to perform substrate processing in the processing chamber on substrates transported from the vacuum transport chamber. The at least one common pipe is configured to provide utilities to the plurality of process modules and is disposed in a lower space surrounded by the plurality of process modules, downward from the vacuum transport chamber.
xxx film on a substrate. The removal process unit removes a reaction product between the metal film and the processing liquid adhering to the surface of the substrate by bringing the reaction product into contact with a removal liquid.
A plasma processing device disclosed in the present invention comprises a chamber, a substrate support part, at least one RF power supply, a bias power supply, and a control circuit. The substrate support part is disposed in the chamber. The bias power supply supplies, to the substrate support part, a bias signal for attracting ions from plasma generated in the chamber to a substrate on the substrate support part. The control circuit changes the frequency of at least one RF signal over time so as to adjust the uniformity of a radial density distribution of the plasma during a period in which said at least one RF signal is supplied from said at least one RF power supply.
A plasma processing apparatus according to the present disclosure includes an RF generation unit for plasma generation. In the RF generation unit, a phase difference detector generates the voltage corresponding to the phase difference between a first signal and a second signal at each phase within a repetitive period. The first signal and the second signal are either a voltage and a current of a source RF signal, or forward waves and reflected waves of the source RF signal. A voltage-controlled oscillator generates a signal with the source frequency corresponding to the voltage generated by the phase difference detector. An amplifier amplifies the signal generated by the voltage-controlled oscillator to generate a source RF signal for each phase within the repetitive period. A delay circuit delays the source RF signal at each phase within the repetitive period by an integer multiple of the time length of the repetitive period, and then outputs the source RF signal from the RF generation unit.
This substrate processing device comprises: a first electrostatic chuck that has a first electrode and a second electrode to which a voltage is applied, and that attracts and holds a first substrate; a first sensor that measures the capacitance between the first electrode and the second electrode; and a control circuit. The control circuit performs control for applying a first voltage across the first electrode and the second electrode and measuring the capacitance by means of the first sensor after the first substrate and the first electrostatic chuck are brought into contact with each other, control for determining whether the material of the first substrate is a first material by using the measurement value from the first sensor, and control for, when the material of the first substrate is the first material, applying a second voltage larger than the first voltage across the first electrode and the second electrode and attracting the first substrate onto the first electrostatic chuck.
A method is provided for plasma etching in a semiconductor processing chamber. The method includes evacuating a plasma processing chamber using a vacuum pump while flowing multiple gases into the chamber. A cyclic plasma etching process is performed on a substrate through multiple cycles. Each cycle includes applying a first set of pulses at a first SP level to an SP electrode over a first time duration, and applying a second set of pulses at a first BP level to a BP electrode over a second time duration, with both sets of pulses having the same frequency. The SP electrode couples to a first reference potential lower than the first SP level for a third duration, while the BP electrode couples to a second reference potential lower than the first BP level for a fourth duration. These durations are determined based on flow rate of gases, speed of vacuum pump, and volume of processing chamber.
A method of wafer processing includes loading a wafer into a processing chamber. The wafer has a top surface coated with a solvent film including a first solvent and a second solvent. Relative to a total mass of the solvent film, the first solvent is 50 wt. % or more and less than 100 wt. %, and the second solvent is more than 0 wt. % and 50 wt. % or less. The second solvent has a higher vapor pressure and a lower surface tension than the first solvent. A processing fluid is supplied into the processing chamber so that the processing fluid in the processing chamber is a supercritical fluid in which the first solvent and the second solvent dissolve to form a supercritical mixture, which removes the first solvent and the second solvent from the top surface of the wafer. The supercritical mixture is discharged from the processing chamber.
H01L 21/02 - Manufacture or treatment of semiconductor devices or of parts thereof
H01L 21/67 - Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereofApparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components
An upper assembly includes a ceiling plate, a base member, and at least one actuator. The ceiling plate is located above a processing space in a chamber in a substrate processing apparatus. The base member is located on the ceiling plate. The at least one actuator lifts the ceiling plate and urges the ceiling plate against the base member.
Disclosed is a substrate support assembly. A base of the substrate support assembly includes a flow path. The first gas supply is connected to the first container. The first gas supply is configured to supply a first gas to the first container for supplying a first heat transfer medium in the first container to the flow path via at least one first pipe. The second gas supply is connected to the second container. The second gas supply is configured to supply a second gas to the second container. The heat transfer medium supply further includes at least one third pipe and a valve.
Provided is a substrate support assembly. A base of the substrate support assembly includes a flow path. The first container is configured to change a first capacity therein such that the heat transfer medium is supplied to the flow path via the at least one first pipe by a decrease in the first capacity. A second container is configured to change a second capacity therein such that a gas is supplied to the flow path by a decrease in the second capacity. The first container and the second container are configured such that a decrease in one of the first capacity and the second capacity causes an increase in the other. The heat transfer medium supply further includes at least one third pipe and a valve.
A transporter for transporting an object includes a compartment to accommodate the object; an opening portion connectable to a processing apparatus for a substrate; a gate valve to open and close the opening portion; a robotic arm including an end effector, the robotic arm to transfer the object with the end effector to and from the processing apparatus through the opening portion; a first connector structure including a first connector to receive power supplied to the transporter from an external apparatus external to the transporter; a drive to advance the first connector structure toward a second connector structure in the external apparatus to connect the first connector structure to the second connector structure; mover to move the transporter; and controller circuitry to control the drive, and cause the drive to connect the first connector structure to the second connector structure before the opening portion is connected to the processing apparatus.
A substrate processing device according to the present invention comprises a substrate processing unit, an airflow formation unit, a discharge path, a bypass path, a first modification unit, and a control unit. The substrate processing unit has a holding unit that holds a substrate and a cup that surrounds the side of the holding unit. The airflow formation unit supplies a gas from above the cup to form an airflow that descends toward the cup. The discharge path is connected to the cup and transmits gas that is discharged from the cup. The bypass path connects the discharge path and a supply path for gas to the airflow formation unit. The first modification unit modifies the flow rate of gas that flows along the bypass path. The control unit controls the first modification unit to modify the flow rate of gas that flows into the bypass path from the discharge path or the supply path and thereby modifies the flow rate of gas that is discharged from the cup.
This plasma processing device comprises a control unit. The control unit is configured so as to execute steps (a), (b), (c), (d), and (e). Step (a) involves transporting a ring member to a transport position. Step (b) involves lifting the ring member by means of a plurality of lifter pins such that the ring member is self-guided so that the tips of the plurality of lifter pins are respectively positioned inside a plurality of recesses in the ring member. Step (c) involves lowering the ring member onto an end effector. Step (d) involves detecting the horizontal position of the ring member by means of a first detector and obtaining a first correction value subsequent to step (c). Step (e) involves detecting the rotational position of the ring member by means of a second detector and obtaining a second correction value subsequent to step (c).
The disclosed plasma processing device includes a chamber, a substrate support, and an RF power supply. The substrate support is disposed in the chamber. The RF power supply is configured to supply a source RF signal to a high-frequency electrode to generate plasma from a gas in the chamber. The RF power supply is configured to vary a source frequency of the source RF signal in response to a degree of reflection of the source RF signal from a load thereof so as to reduce the degree of reflection. The RF power supply is configured to vary the source frequency such that the source RF signal does not have a source frequency that generates an unwanted signal that includes a harmonic signal and/or intermodulation distortion relative to the source RF signal and that has a signal level that is large enough not to satisfy a tolerance condition.
This bonding device aligns a die and a substrate on the basis of the relative positions of a first mark on the die and second mark on the substrate, and bonds the die and the substrate. The bonding device comprises a planar linear motor and a control circuit. The planar linear motor has a stator which has a flat surface and a plurality of movable elements which move in two directions that are parallel to the flat surface and that intersect each other, in a state in which a gap is formed between the movable elements and the flat surface of the stator. A second suction head is provided to one of the movable elements. A first detection unit is provided to the other movable element. The control circuit controls the positions of the plurality of movable elements individually.
This bonding apparatus aligns a die and a substrate on the basis of the relative positions of a first mark on the die and a second mark on the substrate, and bonds the die and the substrate. The bonding apparatus comprises: a second suction head that sucks the die; a second holding unit that holds the substrate; a first detection unit that detects the first mark on the die before being sucked by the second suction head; a second movement mechanism that moves the second suction head with respect to the second holding unit; and a control circuit. The control circuit obtains the position of the center of the die on the basis of the detection result obtained by the first detection unit, and controls the position at which the second suction head suctions the die such that the center of the die and the center of the second suction head match.
A method for forming interconnected features in a semiconductor device comprises forming a first feature on or in a substrate, forming first and second layers over the first feature, and patterning the second layer to form an opening. A directional etch is used to form a via opening in the first layer with a non-orthogonal alignment to the first feature, compensating for any misalignment between the opening in the second layer and the first feature. This approach enables the formation of a second feature in contact with the first feature despite initial misalignment. The directional etch can be configured to improve alignment based on determined overlay errors. The method can be extended to simultaneously form multiple via openings with different non-orthogonal alignments in different directions to connect multiple features on the substrate, allowing for the formation of third and fourth features in contact with respective first and second features.
A device includes a first die including first integrated circuitry and first conductive wiring layers. The first conductive wiring layers include a power line and a ground line. The device also includes a second die including second integrated circuitry and second conductive wiring layers. The second conductive wiring layers include no power line and no ground line. The first die is aligned with and bonded to the second die. The first conductive wiring layers are electrically connected with the second conductive wiring layers. The second die uses the power line and the ground line of the first die.
A method is provided for overlay error detection in a bonded wafer. The method includes receiving a bonded wafer in a bonding chamber, where the bonded wafer includes a first structure bonded to a second structure at a bonding interface. The first structure includes first overlay targets aligned with second overlay targets of the second structure at the bonding interface. The method further includes illuminating a first light beam onto a first portion of the bonded wafer for a first time duration that includes a start time. A light detector is used to detect a first temperature map of a region of the bonded wafer around the first portion illuminated by the first light beam, with the first temperature map being detected after the start time for a second time duration. Based on the first temperature map, an overlay error at the bonding interface is determined from misalignment between the first overlay targets and the second overlay targets.
H01L 21/66 - Testing or measuring during manufacture or treatment
G01B 11/27 - Measuring arrangements characterised by the use of optical techniques for measuring angles or tapersMeasuring arrangements characterised by the use of optical techniques for testing the alignment of axes for testing the alignment of axes
H01L 21/67 - Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereofApparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components
A technique for improving the concentration of an n-type impurity contained in a diffusion-preventing layer present between a substrate and a metal silicide film is provided. A film formation method according to one embodiment of the present disclosure includes: (a) preparing a substrate having a doped region containing silicon and an n-type impurity on a surface of the substrate; (b) supplying a first metal-containing gas to form an adsorption-promoting layer on the doped region; (c) supplying an n-type impurity-containing gas containing the n-type impurity to form a diffusion-preventing layer containing the n-type impurity on the adsorption-promoting layer; and (d) supplying a second metal-containing gas to form a first metal film over the doped region over which the diffusion-preventing layer is formed, and to form a first metal silicide film through reaction between the first metal film and the silicon in the doped region.
A substrate processing method includes treating a surface of a metallic film that includes ruthenium with a first processing liquid to form a metal chloride on a surface of the metallic film, and removing the metal chloride with a second processing liquid.
An etching method includes: (a) a step of loading a substrate into a chamber of a plasma processing apparatus, wherein the substrate has a silicon-containing film and a mask provided on the silicon-containing film, and the silicon-containing film includes at least one element selected from the group consisting of nitrogen, phosphorus, and boron; and (b) a step of exposing the substrate to plasma generated from a processing gas including a hydrogen fluoride gas, wherein (b) includes a step of forming a recess in the silicon-containing film and a step of forming a protective film including the at least one element on a sidewall of the recess.
A disclosed substrate processing apparatus includes a chamber, a gas supply, and an exhaust system. The gas supply is configured to supply gas into the chamber. The exhaust system is configured to exhaust gas in the chamber. The exhaust system includes a first exhaust device and a second exhaust device. The first exhaust device is connected to the chamber. The second exhaust device is connected to the chamber via the first exhaust device. The first exhaust device includes an adsorption surface and a flow passage. The adsorption surface is configured to adsorb gas from the chamber by being cooled. The flow passage is configured such that a refrigerant for cooling the adsorption surface flows therein.
A plasma processing method includes (a) providing a substrate on a substrate support in a chamber, the substrate having an underlying film, a first film on the underlying film, and a second film on the first film, the first film and the second film providing an opening exposing the underlying film, the second film comprising silicon; and (b) removing the second film by plasma generated from a process gas without supplying an electrical bias to the substrate support or by supplying an electrical bias having a level of 200 W or less, or 1 kV or less to the substrate support, the plasma comprising a hydrogen fluoride etchant.
A thermal insulation structure includes a first thermal insulation sheet and a second thermal insulation sheet that are each configured to cover an outside of a heater mounted to a pipe, and ensure an air layer between the heater and each of the first thermal insulation sheet and the second thermal insulation sheet. Positions of the first thermal insulation sheet and second thermal insulation sheet are fixed with respect to the heater by a fastening portion. According to this structure, power consumption of the heater can be reduced while maintaining the already installed heater.
Provided are a computer program, an information processing method, and an information processing device. The present invention causes a computer to execute processing for: acquiring measurement data pertaining to an etching rate for each of a plurality of substrates etched by causing the fixed position of a nozzle to differ for each substrate and discharging a processing liquid from the nozzle at each fixed position for a set time; complementing, on the basis of the acquired measurement data, a value pertaining to the etching rate when the processing liquid is discharged at a position different from the fixed position; and generating, on the basis of the complemented data, profile data for estimating an etching profile when the nozzle is arbitrarily driven to perform etching on a substrate to be processed.
Provided are a computer program, an information processing method, and an information processing device that can be expected to reduce power consumption of a substrate processing device. A computer program according to the present embodiment causes a computer to execute processing of: acquiring device information including a set temperature of a heater of a substrate processing device and setting information related to processing performed by the substrate processing device or observation information observed during the processing; predicting power consumption of the heater and a chiller of the substrate processing device on the basis of the acquired device information; searching for a set temperature of the chiller that satisfies a constraint condition related to operations of the heater and the chiller and can reduce power consumption compared to the predicted power consumption; and changing the set temperature of the chiller to the searched set temperature.
This conveyance device for conveying an object includes: a holding part for holding the object; a support part for supporting the holding part; a first table provided to the support part; a linear motor for moving the first table; a second table for supporting the linear motor; and a drive motor for moving the second table using a drive method different from that of the linear motor.
A substrate processing system according to an illustrative embodiment comprises a chamber which defines a space therein, a first support part which is disposed inside the chamber, and a measuring device which can be placed on the first support part. The measuring device includes a base substrate that is placed on the first support part and a triangulation sensor that is mounted on the base substrate. The triangulation sensor has a light source that emits light and an imaging element that images light emitted onto an object from the light source. The triangulation sensor measures, via triangulation, the distance to the object on the basis of an image captured by the imaging element.
NATIONAL UNIVERSITY CORPORATION HOKKAIDO UNIVERSITY (Japan)
Inventor
Saitou, Yukiya
Ling, Yuanchieh
Ando, Kota
Asai, Tetsuya
Nobori, Koki
Abstract
Provided are a substrate processing device and the like capable of executing processing based on time-series log data related to the substrate processing device. The substrate processing device according to the present embodiment acquires time-series log data relating to the substrate processing device. The substrate processing device includes an encoder and a decoder, and has a model that outputs estimated data of an operating state of the substrate processing device upon input of time-series log data relating to the substrate processing device. The substrate processing device inputs the acquired log data to the model to output the estimated data of the operating state of the substrate processing device relating to the log data.
A system and method for endpoint detection is provided based on hyperspectral imaging technology and the exhaust gas chamber from a semiconductor processing chamber. The system includes a processing chamber that holds a substrate for processing. An exhaust gas line connects to an exhaust outlet of the processing chamber and directs exhaust gas to an exhaust chamber. A first RF power source connects to the exhaust chamber and generates an exhaust plasma from a portion of the exhaust gas within the exhaust chamber. A hyperspectral imaging (HSI) camera measures hyperspectral images of the exhaust plasma in the exhaust chamber. A method of processing the HSI images for endpoint detection is described.
A measurement processing process S103 of measuring a cut width of a film based on an image obtained by imaging, with an imaging unit 270, a peripheral portion of a substrate which is processed based on a substrate processing recipe; a creation process S602 of creating a management list in which a set value of the cut width of the film, a measurement value of the cut width of the film measured through the measurement processing process and time information at which the measurement result is obtained are correlated; an analysis process S603 (S606) of analyzing a state of the processed substrate based on the created management list; and a notification process S605 (S608, S609) of making a preset notification to a user based on an analysis result obtained through the analysis process are provided.
A film-forming method includes: preparing a substrate in which an insulating film is formed at a surface of the substrate; generating crystal nuclei containing silicon on the insulating film; and growing the generated crystal nuclei.
A substrate processing system includes a transfer module, a first transfer apparatus installed in the transfer module and having a plurality of end effectors configured to respectively hold a plurality of substrates, and a control device including a processor and a memory coupled to the processor, the control device configured to control an operation of the first transfer apparatus. The first transfer apparatus is configured to simultaneously transfer the plurality of substrates. The control device controls (A) calculating a center-to-center distance between the plurality of substrates when the plurality of substrates are respectively held by the plurality of end effectors, and (B) adjusting a position when the plurality of substrates are held by the plurality of end effectors based on the center-to-center distance between the plurality of substrates calculated in the (A) and a design value of the center-to-center distance between the plurality of substrates.
A device includes a first die including first integrated circuitry and first conductive wiring layers. The first conductive wiring layers include a power line and a ground line. The device also includes a second die including second integrated circuitry and second conductive wiring layers. The second conductive wiring layers include no power line and no ground line. The first die is aligned with and bonded to the second die. The first conductive wiring layers are electrically connected with the second conductive wiring layers. The second die uses the power line and the ground line of the first die.
A substrate processing system includes a vacuum transfer module including a vacuum transfer device that transfers a substrate, a position detection sensor that detects a position of the substrate while transferring the substrate by the vacuum transfer device, a transfer device controller that controls an operation of the vacuum transfer device, and a control unit that is communicably connected to the transfer device controller. A sensor check method includes (A) transmitting, from the transfer device controller to the control unit, information on a sensor position recognized by the transfer device controller, (B) determining, by the control unit, whether the position detection sensor is normal or abnormal based on the acquired sensor position, and (C) notifying, when the position detection sensor is determined to be abnormal, information related to an abnormality of the position detection sensor.
G01D 5/34 - Mechanical means for transferring the output of a sensing memberMeans for converting the output of a sensing member to another variable where the form or nature of the sensing member does not constrain the means for convertingTransducers not specially adapted for a specific variable using optical means, i.e. using infrared, visible or ultraviolet light with attenuation or whole or partial obturation of beams of light the beams of light being detected by photocells
77.
Substrate Transfer Apparatus and Substrate Transfer Method
A substrate transfer method for transferring a substrate using a first transfer body and at least one second transfer body comprises transferring the substrate using the first transfer body to a predetermined first substrate reference position in a module, receiving the substrate at the first substrate reference position using the second transfer body, and transferring the substrate to a detection device by moving the second transfer body to a predetermined first transfer body reference position and detecting positional misalignment in plan view between a position of the substrate and a predetermined second substrate reference position in the detection device. Each of the first transfer body and the second transfer body floats from a bottom portion of a substrate transfer area by a magnetic force and moves in a horizontal direction while supporting the substrate.
An etching method includes (a) providing a substrate, the substrate including a first region and a second region, (b) forming a deposit on the first region with a first plasma generated from a first process gas, (c) irradiating the deposit with an electron beam to modify the deposit, simultaneously with the (b) or after the (b), and (d) etching the second region with a second plasma generated from a second process gas, after the (c), in a state where the irradiation with the electron beam is stopped.
There is a pattern forming method which includes: preparing a substrate having a second conductive layer on a surface of the substrate on which a pattern of a first conductive layer and an insulating layer is formed, supplying an ionic liquid to the surface of the substrate, and forming a pattern of the second conductive layer on the first conductive layer by causing a current to flow to the first conductive layer through the ionic liquid.
A plasma processing apparatus includes a processing container, at least a portion of which is composed of a first dielectric, a substrate holding part configured to hold a plurality of substrates, an electromagnetic wave generator configured to generate electromagnetic waves for plasma excitation, an electromagnetic wave supply part configured to supply the electromagnetic waves into the processing container through the first dielectric, and a resonator array structure into which the electromagnetic waves are supplied through the first dielectric. The resonator array structure includes a plurality of resonators that are capable of resonating with a magnetic field component of the electromagnetic waves, that have sizes smaller than a wavelength of the electromagnetic waves, and that are disposed on the same plane. The electromagnetic wave supply part is configured to supply a magnetic field component perpendicular to the plane in which the plurality of resonators are arranged.
An apparatus for transferring a substrate to a substrate processing chamber is provided. The apparatus comprises: a substrate transfer chamber having a floor provided with a first magnet and a sidewall connected to the substrate processing chamber and having an opening through which a substrate is loaded into and unloaded from the substrate processing chamber; a substrate transfer module including a substrate holder configured to hold the substrate and a second magnet having a repulsive force against the first magnet, and configured to move in the substrate transfer chamber by magnetic levitation using the repulsive force; and a heating device configured to heat the substrate transfer module to release contaminants adhered to a surface of the substrate transfer module.
A plasma processing apparatus including a chamber; a substrate support disposed in the chamber and including at least one lower electrode; an upper electrode; an RF signal generator electrically connected to the at least one lower electrode or the upper electrode, and generating an RF signal for generating a plasma in the chamber; a first voltage signal generator electrically connected to the at least one lower electrode and generating a first voltage signal, the first voltage signal having a sequence of first voltage pulses; a second voltage signal generator electrically connected to the upper electrode and generating a second voltage signal; a capacitor; and a rectifying element including a first electrode and a second electrode, the first electrode being electrically connected to a node between the upper electrode and the second voltage signal generator, and the second electrode being electrically connected to a ground potential via the capacitor.
A monitoring device according to one aspect of the present disclosure comprises: an image acquisition unit for acquiring an image obtained by imaging by a camera directed to a processing space to which a fluid for substrate processing is supplied in a state in which a substrate is accommodated; and a state information generation unit for generating information indicating the state of the flow of the fluid in an imaging region by the camera in the processing space on the basis of a change in the image.
An etching method including: (a) a step for preparing a substrate on a substrate support part, wherein the substrate comprises a silicon-containing film and a mask on the silicon-containing film, and the mask comprises a side wall defining at least one opening for exposing the silicon-containing film; and (b) a step for generating plasma from a treatment gas which includes a hydrogen fluoride gas and a bromine-containing gas, the step including forming a first protective film, which includes bromine, to a lower part of the side wall, and forming a recess in the silicon-containing film.
A correction processing method according to the present invention involves: forming a stress adjustment film on a distorted substrate; generating a displacement data group for each first coordinate of the substrate by measuring displacement in a height direction and displacement in the vertical and horizontal directions of a pattern at a plurality of coordinates of the substrate; generating a correction amount data group by calculating a correction amount on the basis of the displacement data group and a film thickness value of the stress adjustment film; and modifying the stress adjustment film by causing the stress adjustment film to be irradiated with an energy beam for each second coordinate in a depth direction on the basis of the correction amount data group and the film thickness value of the stress adjustment film, thereby correcting distortion by changing the stress, and correcting deviation of the pattern.
B23K 26/53 - Working by transmitting the laser beam through or within the workpiece for modifying or reforming the material inside the workpiece, e.g. for producing break initiation cracks
Provided are a computer program, an information processing method, and an information processing device. This computer program is used for optimizing a process recipe including a drive parameter of a nozzle that discharges a treatment liquid onto a substrate to be treated, the computer program causing a computer to execute processing of: acquiring profile data to be used for calculation of a predicted etching profile when the nozzle is optionally driven to etch the substrate to be treated; and deriving the drive parameter of the nozzle such that a degree of deviation between the predicted etching profile calculated using the acquired profile data and a desired etching profile is minimized under an established condition.
Provided is a heat treatment device that includes: a treatment container which is capable of accommodating a plurality of substrates; a heating unit which is provided around the treatment container and heats the plurality of substrates accommodated in the treatment container; and a cooling unit which supplies a cooling gas to a space between the treatment container and the heating unit to cool the space. The cooling unit comprises: piping through which the cooling gas can flow; a heat exchanger which is provided to the piping and exchanges heat with the cooling gas; and a plurality of blowers which are provided to the piping and supply the cooling gas to the heating unit via the piping. In the cooling unit, the heat exchanger and the plurality of blowers are installed at positions adjacent to the heating unit.
NATIONAL INSTITUTE OF ADVANCED INDUSTRIAL SCIENCE AND TECHNOLOGY (Japan)
Inventor
Tanabe, Shinichi
Okada, Naoya
Irisawa, Toshifumi
Abstract
This method for forming a transition metal dichalcogenide film includes a step (A), a step (B), and a step (C). In the step (A), a substrate having a plurality of different transition metal-containing films that are positioned adjacent to each other is provided. In the step (B), the substrate is annealed at a first temperature in an atmosphere of a gas containing a chalcogenation gas or an inert gas. In the step (C), after the step (B) is executed, the substrate is annealed at a second temperature that is higher than the first temperature in an atmosphere of a gas containing a chalcogenation gas.
An objective of the present invention is to provide technology capable of appropriately detecting the occurrence of an abnormality in a substrate caused by a treatment solution related to substrate cleaning. This abnormality detection method comprises: discharging a cleaning solution from a nozzle 36 to a wafer W; using a camera 70 to continuously image an imaging region including at least an outer edge portion of the wafer W and an inner edge portion of a cup 3, and acquiring a plurality of captured images of the imaging region in a time series; identifying behavior of the cleaning solution on the basis of the plurality of captured images and detecting the occurrence of the abnormality in the wafer W on the basis of the behavior of the cleaning solution; and outputting an alert when the occurrence of the abnormality in the wafer W has been detected.
The disclosed upper assembly comprises: a top plate having an upper surface and configured to extend over a processing space inside a chamber of a substrate processing device; a base member disposed on the top plate; at least one actuator configured to lift the top plate and bias the top plate against the base member, the at least one actuator including a rod having a lower end part and a drive unit configured to move the rod up and down; and at least one coupler assembled to the top plate, the at least one coupler including an upper part protruding from the upper surface of the top plate, one of either the lower end part or the upper part having a groove, and the other of either the lower end part or the upper part having a raised part that is fitted into the groove so as to be insertable and removable in a horizontal direction.
Provided are: a seal member which improves sealability; a substrate processing device; and a method for assembling a seal part. The seal member is used for a seal part of a substrate processing device, and includes: a seal member body having an annular shape; and a visual recognition part provided on the surface of the seal member body and having a color different from that of the seal member body. When the direction penetrating an opening formed by the seal member body is defined as an axial direction, the visual recognition part is provided on one side in the axial direction.
This substrate processing apparatus comprises: a chamber; a substrate support part; a first processing gas supply part; a second processing gas supply part; a starting material target which is disposed above a substrate support surface of the substrate support part and contains a starting material of a compound semiconductor, which is disposed so that a surface of the starting material target extends along the flow of a first processing gas, and which is configured so as to emit starting material sputter particles from the surface of the starting material target by means of ions in plasma generated from the first processing gas; and a dopant target which is disposed above the substrate support surface of the substrate support part and contains a dopant of the compound semiconductor, which is disposed so that a surface of the dopant target extends along the flow of a second processing gas, and which is configured so as to emit dopant sputter particles from the surface of the dopant target by means of ions in plasma generated from the second processing gas.
This substrate treatment device comprises: a chamber; a substrate support part; a rotating part; a treatment gas supply system; a plurality of targets disposed above the substrate support part; a gas introduction head disposed above the substrate support part, the gas introduction head being configured to supply a rectification gas into the chamber and rectify a treatment gas that has passed through the surfaces of the plurality of targets in a direction toward a substrate support face; a first heater disposed below the substrate support face of the substrate support part; and a second heater disposed at the outer periphery of a space formed between the substrate support part and the plurality of targets.
Provided are an information processing method, a computer program, an information processing device, and an information processing system capable of assisting a user who analyzes log data related to substrate processing. In an information processing method according to an embodiment of the present invention, an information processing device: acquires analysis target data from a database in which log data related to substrate processing performed by a substrate processing device is stored; receives selection of an analysis program to be used for analysis from among a plurality of analysis programs; and outputs an analysis result obtained by analyzing the acquired data by using the analysis program, the selection of which has been received.
A method is provided for overlay error detection in a bonded wafer. The method includes receiving a bonded wafer in a bonding chamber, where the bonded wafer includes a first structure bonded to a second structure at a bonding interface. The first structure includes first overlay targets aligned with second overlay targets of the second structure at the bonding interface. The method further includes illuminating a first light beam onto a first portion of the bonded wafer for a first time duration that includes a start time. A light detector is used to detect a first temperature map of a region of the bonded wafer around the first portion illuminated by the first light beam, with the first temperature map being detected after the start time for a second time duration. Based on the first temperature map, an overlay error at the bonding interface is determined from misalignment between the first overlay targets and the second overlay targets.
Provided is a technique capable of acquiring information on the distance between a functional member and a substrate within a substrate processing apparatus. An information collection system that acquires information on a substrate processing apparatus including a substrate holder configured to hold a substrate and an annular member located in a backside of the substrate, includes a disk-shaped main body having a bottom surface held by the substrate holder, an irradiator fixed to the main body and configured to irradiate the annular member with a measurement wave, a detector fixed to the main body and configured to detect a response to the measurement wave from the irradiator, and a calculator configured to acquire information on a gap between the main body and the annular member based on the response detected by the detector.
G01B 11/14 - Measuring arrangements characterised by the use of optical techniques for measuring distance or clearance between spaced objects or spaced apertures
G06T 7/70 - Determining position or orientation of objects or cameras
A method for bonding wafers includes receiving a first wafer and a second wafer, the first wafer including a first bonding layer, the second wafer including a second bonding layer. The method further includes performing a surface activation plasma (SAP) treatment on the first bonding layer of the first wafer to form a first treated layer by exposing the first bonding layer to a plasma, the SAP treatment introducing nitrogen groups including inactive nitrogen termination sites on an exposed surface of the first bonding layer. And the method further includes striking the first wafer to bond the first treated layer of the first wafer with the second wafer to form a bonded wafer.
A method for processing a substrate includes receiving the substrate including a metal oxide photoresist (MOR) layer disposed over an underlying layer, the MOR layer including a first region and a second region. The method further includes performing a gas development treatment on the MOR layer to remove portions of the first region. And the method further includes exposing the MOR layer to a gas mixture to remove remaining portions of the first region after the gas development treatment to form a patterned MOR mask.
A substrate processing method includes supplying a first processing gas containing a first metal to a substrate having a recess in which a semiconductor layer containing silicon is exposed on a bottom surface thereof and whose sidewall is formed by an insulator film, and forming a metal silicide film; a plasma processing process of performing at least one of a plasma etching process of supplying a plasma-converted etching gas to the substrate to remove a film of the first metal on the sidewall, or a sidewall processing process of supplying a plasma-converted second processing gas to the substrate to form a metal-containing film of a mixture of the first metal and elements constituting the insulator film, on the sidewall; and supplying a first film-forming gas containing a second metal to the substrate after the plasma processing process and forming a stacked metal film stacked on the metal silicide film.
C23C 16/455 - Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into the reaction chamber or for modifying gas flows in the reaction chamber
C23C 16/50 - Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges
A substrate processing system includes: a substrate processing apparatus; a maintenance apparatus; and control circuitry. The substrate processing apparatus includes a substrate processing module, and a vacuum transfer module. The vacuum transfer module includes a vacuum transfer chamber and a first planar motor to move at least one magnetically floating movable body along a first plane in the vacuum transfer chamber. The maintenance apparatus includes a standby chamber connected to the vacuum transfer chamber, and a second planar motor to move the at least one magnetically floating movable body along a second plane extending from the first plane into the standby chamber, and the control circuitry controls the first planar motor and the second planar motor to replace an operating magnetically floating movable body with a replacement magnetically floating movable body located in the standby chamber.
