Systems and methods under the present disclosure include swabs and storage tubes for use in medical environments. The various embodiments can help prevent cross contamination in laboratories or make swabs and storage tubes more compatible with automated laboratory processes. Accurate positioning of swabs can help make any pipetting procedures more accurate, easier and quicker.
A61B 10/00 - Instruments pour le prélèvement d'échantillons corporels à des fins de diagnostic Autres procédés ou instruments pour le diagnostic, p. ex. pour le diagnostic de vaccination ou la détermination du sexe ou de la période d'ovulationInstruments pour gratter la gorge
B01L 3/00 - Récipients ou ustensiles pour laboratoires, p. ex. verrerie de laboratoireCompte-gouttes
A61B 10/02 - Instruments pour prélever des échantillons cellulaires ou pour la biopsie
Localizing hot spots in multi layered device under test (DUT) by using lock-in thermography (LIT) where plural hot spots of electrical circuits are buried in the DUT at different depth layers from a bottom layer to a top layer, comprises applying test signals of multiple frequencies to the electrical circuits of the DUT for exciting the hot spots; imaging a top surface of the top layer of the DUT at timed intervals to obtain IR images of the DUT while the test signal is applied to the electrical circuits wherein the images are in correlation to a propagation of heat from the hot spots in the DUT; detecting the thermal response signals at the timed intervals from the images taken from the DUT; and determining changes in the appearance of hot spot images on the top surface of the DUT in relation to the frequencies of the thermal response signals.
A pulsed-laser LADA system is provided, which utilizes temporal resolution to enhance spatial resolution. The system is capable of resolving CMOS pairs within the illumination spot using synchronization of laser pulses with the DUT clock. The system can be implemented using laser wavelength having photon energy above the silicon bandgap so as to perform single-photon LADA or wavelength having photon energy below the silicon bandgap so as to generate two-photon LADA. The timing of the laser pulses can be adjusted using two feedback loops tied to the clock signal of an ATE, or by adjusting the ATE's clock signal with reference to a fixed-pulse laser source.
An optics arrangement for a solid immersion lens (SIL) is disclosed. The arrangement enables the SIL to freely tilt. The arrangement includes a SIL having an optical axis extending from an engaging surface and a rear surface of the SIL; a SIL housing having a cavity configured to accept the SIL therein while allowing the SIL to freely tilt within the cavity, wherein the cavity includes a hole positioned such that the optical axis passes there-through, to thereby allow light collected by the SIL to propagate to an objective lens; and, a SIL retainer attached to the SIL housing and configured to prevent the SIL from exiting the cavity.
An apparatus and method for optical probing of a DUT is disclosed. The system enables identifying, localizing and classifying faulty devices within the DUT. A selected area of the DUT is imaged while the DUT is receiving test signals, which may be static or dynamic, i.e., causing certain of the active devices to modulate. Light from the DUT is collected and is passed through a rotatable diffracting element prior to imaging it by a sensor and converting it into an electrical signal. The resulting image changes depending on the rotational positioning of the grating. The diffracted image is inspected to identify, localize and classify faulty devices within the DUT.
A method for testing an integrated circuit (IC) using a nanoprobe, by using a scanning electron microscope (SEM) to register the nanoprobe to an identified feature on the IC; navigating the nanoprobe to a region of interest; scanning the nanoprobe over the surface of the IC while reading data from the nanoprobe; when the data from the nanoprobe indicates that the nanoprobe traverse a feature of interest, decelerating the scanning speed of the nanoprobe and performing testing of the IC. The scanning can be done at a prescribed nanoprobe tip force, and during the step of decelerating the scanning speed, the method further includes increasing the nanoprobe tip force.
Localizing hot spots in multi layered device under test (DUT) by using lock-in thermography (LIT) where plural hot spots of electrical circuits are buried in the DUT at different depth layers from a bottom layer to a top layer, comprises applying test signals of multiple frequencies to the electrical circuits of the DUT for exciting the hot spots; imaging a top surface of the top layer of the DUT at timed intervals to obtain IR images of the DUT while the test signal is applied to the electrical circuits wherein the images are in correlation to a propagation of heat from the hot spots in the DUT; detecting the thermal response signals at the timed intervals from the images taken from the DUT; and determining changes in the appearance of hot spot images on the top surface of the DUT in relation to the frequencies of the thermal response signals.
Using a local-potential-driving probe drives a conductor to a known potential while adjacent lines are grounded through the sample body reduces electrostatic scanning microscope signal from adjacent lines, allows imaging of metal lines deeper in the sample. Providing different potentials locally on different conductive lines using multiple local-potential-driving probes allows different conductors to be highlighted in the same image, for example, by changing the phase of the signal being applied to the different local-potential-driving probes.
A pulsed-laser LADA system is provided, which utilizes temporal resolution to enhance spatial resolution. The system is capable of resolving CMOS pairs within the illumination spot using synchronization of laser pulses with the DUT clock. The system can be implemented using laser wavelength having photon energy above the silicon bandgap so as to perform single-photon LADA or wavelength having photon energy below the silicon bandgap so as to generate two-photon LADA. The timing of the laser pulses can be adjusted using two feedback loops tied to the clock signal of an ATE, or by adjusting the ATE's clock signal with reference to a fixed-pulse laser source.
Probing an integrated circuit (IC), by: electrically applying stimulation signal to said IC; scanning a selected area of said IC with a monochromatic beam; collecting beam reflection from the selected area of said IC, wherein the beam reflection correspond to modulation of the monochromatic beam by active devices of said IC; converting said beam reflection to an electrical probing signal; selecting a frequency or a band of frequencies of said probing signal; utilizing the probing signal to generate a spatial modulation map for various locations over the selected area of said IC; and displaying the spatial map on a monitor, wherein grey scale values correspond to modulation signal values.
An apparatus and method for laser voltage testing of a DUT is disclosed. The system enables laser voltage probing and laser voltage imaging of devices within the DUT. A selected area of the DUT is illuminating a while the DUT is receiving test signals causing certain of the active devices to modulate. Light reflected from the DUT is collected and is converted into an electrical signal. The electrical signal is sampled by an ADC and the output of the ADC is sent to an FPGA. The FPGA operates on the signal so as to provide an output that emulates a spectrum analyzer or a vector analyzer.
System for performing in-line nanoprobing on semiconductor wafer. A wafer support or vertical wafer positioner is attached to a wafer stage. An SEM column, an optical microscope and a plurality of nanoprobe positioners are all attached to the ceiling. The nanoprobe positioners have one nanoprobe configured for physically contacting selected points on the wafer. A force (or touch) sensor measures contact force applied by the probe to the wafer (or the moment) when the probe physically contacts the wafer. A plurality of drift sensors are provided for calculating probe vs. wafer alignment drift in real-time during measurements.
G01Q 30/02 - Dispositifs d'analyse d’un type autre que la microscopie à sonde à balayage SPM, p. ex. microscope électronique à balayage SEM [Scanning Electron Microscope], spectromètre ou microscope optique
G01R 31/26 - Test de dispositifs individuels à semi-conducteurs
H01J 37/28 - Microscopes électroniques ou ioniquesTubes à diffraction d'électrons ou d'ions avec faisceaux de balayage
H01L 21/66 - Test ou mesure durant la fabrication ou le traitement
G01R 31/28 - Test de circuits électroniques, p. ex. à l'aide d'un traceur de signaux
n are characteristic for gradients in heat flow velocity in further depths lying deeper as the second depth; and extracting from the thermal images an indication of the presence of any gradients of heat flow velocity at the respective depth distances from a surface of the sample. The system is configured to carry out the above method.
An apparatus and method for optical probing of a DUT is disclosed. The system enables identifying, localizing and classifying faulty devices within the DUT. A selected area of the DUT is imaged while the DUT is receiving test signals, which may be static or dynamic, i.e., causing certain of the active devices to modulate. Light from the DUT is collected and is passed through a transparent diffracting grating prior to imaging it by a sensor and converting it into an electrical signal. The resulting image includes the zero order and first order diffraction of the grating. The grating is configured such that the zero order is in registration with emission sites imaged when the grating is outside the optical path.
G06F 17/18 - Opérations mathématiques complexes pour l'évaluation de données statistiques
G01N 21/956 - Inspection de motifs sur la surface d'objets
G01R 31/311 - Test sans contact utilisant des rayonnements électromagnétiques non ionisants, p. ex. des rayonnements optiques de circuits intégrés
G01N 21/95 - Recherche de la présence de criques, de défauts ou de souillures caractérisée par le matériau ou la forme de l'objet à analyser
G01N 21/66 - Systèmes dans lesquels le matériau analysé est excité de façon à ce qu'il émette de la lumière ou qu'il produise un changement de la longueur d'onde de la lumière incidente excité électriquement, p. ex. par électroluminescence
An optics arrangement for a solid immersion lens (SIL) is disclosed. The arrangement enables the SIL to freely tilt. The arrangement includes a SIL having an optical axis extending from an engaging surface and a rear surface of the SIL; a SIL housing having a cavity configured to accept the SIL therein while allowing the SIL to freely tilt within the cavity, wherein the cavity includes a hole positioned such that the optical axis passes there-through, to thereby allow light collected by the SIL to propagate to an objective lens; and, a SIL retainer attached to the SIL housing and configured to prevent the SIL from exiting the cavity.
An apparatus and method for optical probing of a DUT is disclosed. The system enables identifying, localizing and classifying faulty devices within the DUT. A selected area of the DUT is imaged while the DUT is receiving test signals, which may be static or dynamic, i.e., causing certain of the active devices to modulate. Light from the DUT is collected and is passed through a rotatable diffracting element prior to imaging it by a sensor and converting it into an electrical signal. The resulting image changes depending on the rotational positioning of the grating. The diffracted image is inspected to identify, localize and classify faulty devices within the DUT.
A method for emission testing of a semiconductor device (DUT), by mounting the DUT onto an test bench of an emission tester, the emission tester having an optical detector; electrically connecting the DUT to an electrical tester; applying electrical test signals to the DUT while keeping test parameters constant; serially inserting one of a plurality of shortpass filters into an optical path of the emission tester and collecting emission test signal from the optical detector until all available shortpass filters have been inserted into the optical path; determining appropriate shortpass filter providing highest signal to noise ratio of the emission signal; inserting the appropriate shortpass filter into the optical path; and, performing emission testing on the DUT.
G01R 31/26 - Test de dispositifs individuels à semi-conducteurs
G01R 31/311 - Test sans contact utilisant des rayonnements électromagnétiques non ionisants, p. ex. des rayonnements optiques de circuits intégrés
G01R 15/24 - Adaptations fournissant une isolation en tension ou en courant, p. ex. adaptations pour les réseaux à haute tension ou à courant fort utilisant des dispositifs modulateurs de lumière
18.
Method for examination of a sample by means of the heat flow thermography
The invention provides a method for a non-destructive, non-contacting and image forming examination of a sample by means of the heat flow thermography method where the examination consists of evaluating an existence and/or depth distance values of any heat flow velocity transitions below a surface of the sample, wherein the sample is excited by heat pulses of at least one excitation source, and a thermal flow originating therefrom is captured by at least one infrared sensor in an image sequence of thermal images, and wherein the thermal images obtained from the image sequence are evaluated by means of a signal and image processing and depicting a thermal flow with a resolution in time and in space. The method comprises: exciting the sample at least twice independently from each other by means of the heat pulses from the excitation source where a second excitation and any succeeding excitation is delayed with respect to a preceding excitation by a time delay whereby the start of the captured sequence happens at another defined point of time within the time between two images within an image sequence; detecting the respective total thermal flow processes generated by the at least two excitation processes of the sample by the infrared sensor in the independent image sequences containing the excitation as well as the thermal answer signal from the sample, combining all captured image sequences to a total image sequence in which all images are arranged in a sequence which is correct in time with respect to the point of time of the pulse like excitation, and extracting from the total image sequence, in a manner known per se, an indication of the depth distance of a heat flow velocity transition from a surface of the sample. Therein, the heat flow velocity transitions can be a boarder layer of a layered material or defects in a substrate or below a surface of a work piece.
A system and method for obtaining super-resolution image of an object. An illumination beam is directed through an optical axis onto the object to be imaged. Paraxial rays of the illumination beam are deflected away from the optical axis and into a beam dump. The non-paraxial rays are collected after being reflected by the object so as to generate an image only from the non-paraxial rays.
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