- All sections
- H - Electricity
- H10D - Inorganic electric semiconductor devices
- H10D 84/83 - Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups or , e.g. integration of IGFETs of only field-effect components of only insulated-gate FETs [IGFET]
Patent holdings for IPC class H10D 84/83
Total number of patents in this class: 357
10-year publication summary
|
0
|
0
|
0
|
0
|
1
|
4
|
34
|
63
|
51
|
187
|
| 2016 | 2017 | 2018 | 2019 | 2020 | 2021 | 2022 | 2023 | 2024 | 2025 |
Principal owners for this class
| Owner |
All patents
|
This class
|
|---|---|---|
| Taiwan Semiconductor Manufacturing Company, Ltd. | 42704 |
137 |
| Semiconductor Energy Laboratory Co., Ltd. | 11403 |
30 |
| Samsung Electronics Co., Ltd. | 146092 |
29 |
| Intel Corporation | 46962 |
29 |
| International Business Machines Corporation | 61228 |
21 |
| Semiconductor Components Industries, L.L.C. | 5251 |
7 |
| Sony Semiconductor Solutions Corporation | 10448 |
7 |
| Qualcomm Incorporated | 85322 |
6 |
| IBM United Kingdom Limited | 4346 |
6 |
| Adeia Semiconductor Solutions LLC | 290 |
6 |
| Tokyo Electron Limited | 12712 |
4 |
| United Microelectronics Corp. | 4268 |
4 |
| Rohm Co., Ltd. | 6450 |
4 |
| IBM Israel-science and Technology Ltd | 145 |
4 |
| Rapidus Corporation | 24 |
4 |
| Socionext Inc. | 1551 |
3 |
| Nanya Technology Corporation | 2461 |
3 |
| Invention And Collaboration Laboratory, Inc. | 23 |
3 |
| Micron Technology, Inc. | 26262 |
2 |
| Texas Instruments Incorporated | 19470 |
2 |
| Other owners | 46 |