- All sections
- H - Electricity
- H10D - Inorganic electric semiconductor devices
- H10D 84/40 - Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups or with at least one component covered by groups or , e.g. integration of IGFETs with BJTs
Patent holdings for IPC class H10D 84/40
Total number of patents in this class: 39
10-year publication summary
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0
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0
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0
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0
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1
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0
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5
|
5
|
5
|
15
|
| 2016 | 2017 | 2018 | 2019 | 2020 | 2021 | 2022 | 2023 | 2024 | 2025 |
Principal owners for this class
| Owner |
All patents
|
This class
|
|---|---|---|
| Taiwan Semiconductor Manufacturing Company, Ltd. | 42636 |
5 |
| Fuji Electric Co., Ltd. | 5134 |
3 |
| Texas Instruments Incorporated | 19468 |
2 |
| Tokyo Electron Limited | 12694 |
2 |
| Advanced Micro Devices, Inc. | 5691 |
2 |
| Tokyo Electron U.S. Holdings, Inc | 742 |
2 |
| Analog Devices International Unlimited Company | 1901 |
2 |
| Samsung Electronics Co., Ltd. | 145864 |
1 |
| Qualcomm Incorporated | 85183 |
1 |
| Toshiba Corporation | 12334 |
1 |
| Intel Corporation | 46962 |
1 |
| Micron Technology, Inc. | 26258 |
1 |
| Mitsubishi Electric Corporation | 46037 |
1 |
| Rohm Co., Ltd. | 6444 |
1 |
| STMicroelectronics S.r.l. | 3611 |
1 |
| Korea Advanced Nano Fab Center | 27 |
1 |
| Nanya Technology Corporation | 2449 |
1 |
| Newport Fab, LLC | 158 |
1 |
| The Penn State Research Foundation | 1517 |
1 |
| Silergy Semiconductor Technology (Hangzhou) LTD | 620 |
1 |
| Other owners | 8 |