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2024
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Invention
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Bonding wire. PtNiPtNiNi (at%) of Ni with respect to all the measurement points in the coating la... |
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Invention
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Al bonding wire or al bonding ribbon. The present invention provides an Al bonding wire or an Al ... |
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Invention
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Al bonding wire or al bonding ribbon. The purpose of the present invention is to provide an Al bo... |
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Invention
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Aluminum bonding wire or aluminum bonding ribbon. Provided is an aluminum bonding wire or an alum... |
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Invention
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Al bonding wire or al bonding ribbon. 001020120122 is defined as a core portion, a volume ratio o... |
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Invention
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Bonding wire for semiconductor device. The present invention addresses the problem of maintaining... |
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Invention
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Aluminum connecting material. Provided is an aluminum connecting material that ensures excellent ... |
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Invention
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Al connection material. The present invention provides an Al connection material that achieves ex... |
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Invention
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Solder ball. 55Sn and a second phase mainly composed of AuSn, and thereby the occurrence of uneve... |
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2023
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Invention
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Al connection material. Provided is an Al connection material that has excellent temperature cycl... |
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Invention
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Al connecting material. Provided is an Al connecting material that can prevent occurrence of inte... |
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Invention
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Al connection material. The present invention provides an Al connection material which achieves e... |
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Invention
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Al connection material. Provided is an Al connection material which can suppress generation of in... |
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Invention
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Al alloy bonding wire. The present invention provides an Al bonding wire which achieves excellent... |
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Invention
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Bonding wire. (A) the bonding wire contains one or more elements selected from the group consisti... |
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Invention
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Bonding wire. Provided is an alloy-coated Cu bonding wire comprising: a core material made of Cu ... |
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Invention
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Bonding wire for semiconductor devices. 0-100-100-100-100-100-10 is less than or equal to 80 atom %. |
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2022
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Invention
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Bonding wire for semiconductor devices. Au at a surface of the wire is from 10 atomic % to 85 ato... |
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Invention
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Bonding wire for semiconductor device. PdNiPdNiPdNiPdNiAuAu of Au on the surface of the wire is 1... |
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Invention
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Copper alloy bonding wire for semiconductor devices. In a copper alloy bonding wire for semicondu... |
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Invention
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Bonding wire for semiconductor devices. NiPdNiPdPd (% by mass) of Pd in the entirety of the wire ... |
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Invention
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Bonding wire for semiconductor device. PdNiPdNiNi (at%) for all measurement points in the claddin... |
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Invention
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Bonding wire for semiconductor device. NiPdNiPdPd (mass%) relative to the whole wire is 0.02–0.75... |
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Invention
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Bonding wire for semiconductor devices.
The bonding wire for semiconductor devices includes a co... |
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Invention
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Bonding wire for semiconductor devices. the total number of measurement points in the coating lay... |
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Invention
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Semiconductor device bonding wire. AuNiAuNiNi (mass%) with respect to the entirety of the wire is... |
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Invention
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Bonding wire for semiconductor device. PdNiPdNiNi (at%) of Ni with respect to all the measurement... |
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Invention
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Bonding wire for semiconductor device. NiPdNiPdPd (mass%) of Pd with respect to the wire overall ... |
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Invention
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Bonding wire for semiconductor devices.
To provide a novel Cu bonding wire that achieves a favor... |
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Invention
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Bonding wire for semiconductor devices.
There is provided a novel Cu bonding wire that achieves ... |
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Invention
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Bonding wire for semiconductor devices. (ii) a concentration of Ag relative to the entire wire is... |
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Invention
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Bonding wire for semiconductor device. AuNiAuNiNi (mass%) of Ni with respect to the wire overall ... |
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Invention
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Bonding wire for semiconductor device. NiPdNiPdPd (mass%) in terms of the entire wire being 0.02 ... |
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Invention
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Bonding wire for semiconductor devices. PdNi PdNiNi (% by atom) of Ni at all measurement points o... |
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Invention
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Ai bonding wire for semiconductor devices.
To provide an Al bonding wire for semiconductor devic... |
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Invention
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Ai wiring material.
There is provided an Al wiring material which can achieve sufficient bond re... |
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Invention
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Ai wiring material.
There is provided a novel Al wiring material that achieves both of a suppres... |
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Invention
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Al bonding wire for semiconductor devices.
To provide an Al bonding wire exhibiting a favorable ... |
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2021
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Invention
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Al wiring material.
There is provided a novel Al wiring material that achieves a favorable high-... |
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Invention
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Ag alloy bonding wire for semiconductor devices and semiconductor device.
There is provided an A... |
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Invention
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Bonding wire for semiconductor devices.
There is provided a bonding wire for semiconductor devic... |
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Invention
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Copper bonding wire. 2O (Cu[I]) corresponding to monovalent Cu falls within a range from 0.8 to 12. |
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2020
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Invention
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Copper bonding wire for semiconductor devices and semiconductor device.
There is provided a copp... |
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Invention
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Al bonding wire.
There is provided an Al bonding wire which can achieve a sufficient bonding rel... |
