A light source arranged to illuminate a non-patterning surface of a patterning device in a lithographic apparatus, wherein the light source is configured such that, in response to illumination from the light source, the non-patterning surface emits electrons due to the photoelectric effect. Advantageously, when the non-patterning surface is charged, the non-patterning surface may be discharged before it is unloaded.
G03F 7/00 - Production par voie photomécanique, p. ex. photolithographique, de surfaces texturées, p. ex. surfaces impriméesMatériaux à cet effet, p. ex. comportant des photoréservesAppareillages spécialement adaptés à cet effet
G03F 1/82 - Procédés auxiliaires, p. ex. nettoyage ou inspection
2.
SYSTEM, METHODS, AND APPARATUSES WITH REDUCED NOISE CURRENT
Systems and apparatuses may include at least three conductors including a first conductor that is electrically isolated from a chassis, the first conductor being electrically connected to a node of an AC power source, the node of the AC power source being electrically connected to a ground reference, and the first conductor configured to provide a path for noise current generated by the EMI filter to flow to the AC power source to enable the noise current to pass to the AC power source without passing through the chassis. Each conductor may include an inductor, the inductors being magnetically coupled such that a sum of currents flowing through the inductors is substantially zero. Systems may include shielded cables electrically connected to a chamber to provide a low-impedance path for noise currents to flow, wherein at a mechanical interface, a column is mechanically coupled to and electrically isolated from the chamber.
H01J 37/02 - Tubes à décharge pourvus de moyens permettant l'introduction d'objets ou d'un matériau à exposer à la décharge, p. ex. pour y subir un examen ou un traitement Détails
H01J 37/24 - Circuits non adaptés à une application particulière du tube et non prévus ailleurs
H01J 37/28 - Microscopes électroniques ou ioniquesTubes à diffraction d'électrons ou d'ions avec faisceaux de balayage
H02M 1/44 - Circuits ou dispositions pour corriger les interférences électromagnétiques dans les convertisseurs ou les onduleurs
3.
A NEW DESIGN CONCEPT OF SCANNING ELECTRON MICROSCOPE WITH CHARGED PARTICLE SOURCE
A particle beam inspection apparatus, and more particularly, a method of particle beam parameter variation compensation for image inspection and enhancement are disclosed. A primary beam emission current may be continuously monitored to compensate for an emission current fluctuation. The fluctuation may be compensated by adjusting a characteristic of the electron source or a sub-system within the charged particle system. An event-based detection system may be used to measure a number of electrons impacting a detector within a period of time with a location on a sample and normalize a generated image of the sample. A deflector may adjust a deflection speed of the primary beam across the sample to compensate for emission current fluctuation while maintaining a constant dose impacting a sample. Thus, image quality is improved, sources of error during sample inspection are minimized, metrology measurement accuracy is improved, and throughput is increased.
A lithographic apparatus includes an illumination system, a projection system, and an inspection system. The inspection system includes a broadband radiation system, an optical system, wavelength separator system, and detector system. The broadband radiation system generates source radiation having a first set of narrowband wavelengths distributed within an operating bandwidth of the inspection system and a second set of narrowband wavelengths distributed within the operating bandwidth. A narrowband wavelength of the first set is proximal to a narrowband wavelength of the second set. The optical system directs first and second portions of the source radiation toward first and second targets to generate first and second scattered radiation. The wavelength separator system separates narrowband wavelengths of the first and second scattered radiation. The detector system receives the first and second scattered radiation to generate first and second measurement signals based on the first and second scattered radiation.
G03F 9/00 - Mise en registre ou positionnement d'originaux, de masques, de trames, de feuilles photographiques, de surfaces texturées, p. ex. automatique
G01B 11/27 - Dispositions pour la mesure caractérisées par l'utilisation de techniques optiques pour mesurer des angles ou des cônesDispositions pour la mesure caractérisées par l'utilisation de techniques optiques pour tester l'alignement des axes pour tester l'alignement des axes
G03F 7/00 - Production par voie photomécanique, p. ex. photolithographique, de surfaces texturées, p. ex. surfaces impriméesMatériaux à cet effet, p. ex. comportant des photoréservesAppareillages spécialement adaptés à cet effet
A substrate support arrangement configured to support a substrate, the substrate support arrangement including: a substrate support with a substantially planar support surface for a substrate; and a substrate shaping system that includes one or more substrate shaping devices, wherein each substrate shaping device is moveable relative to the substrate support; and wherein, when a substrate is provided on the support surface, each substrate shaping device is arranged to apply an electrostatic force to the periphery of the substrate.
G03F 7/00 - Production par voie photomécanique, p. ex. photolithographique, de surfaces texturées, p. ex. surfaces impriméesMatériaux à cet effet, p. ex. comportant des photoréservesAppareillages spécialement adaptés à cet effet
An improved magnetic lens cooling system is disclosed. A magnetic lens assembly can comprise a coil, a housing containing the coil, and a pole piece that is isolated from the housing such that there is a gap between the housing and the pole piece. Wherein the magnetic lens assembly can be configured to have a vacuum pressure in the gap.
A method of measuring a topography of a surface of an object, the method includes: forming a first image of a pattern on a beam spot region with a radiation beam; moving the object relative to the beam spot region; receiving a portion of the radiation beam reflected from the object and splitting the reflected radiation into first and second portions such that a first portion of the radiation, which corresponds to a first portion of the first image, is spatially separate from a second portion of the radiation, which corresponds to a second portion of the first image; determining an intensity of the first and second portions of the radiation; and determining a height of the object by combining the intensity of the first portion of the radiation determined at a first time and the intensity of the second portion of the radiation determined at a second time.
G03F 9/00 - Mise en registre ou positionnement d'originaux, de masques, de trames, de feuilles photographiques, de surfaces texturées, p. ex. automatique
G01B 11/06 - Dispositions pour la mesure caractérisées par l'utilisation de techniques optiques pour mesurer la longueur, la largeur ou l'épaisseur pour mesurer l'épaisseur
8.
CONTROL CONDUCTIVITY OF POLYIMIDE FILM BY IRRADIATION FOR RTC APPLICATION
A cleaning apparatus for cleaning a reticle stage of a lithographic apparatus. The apparatus includes a substrate having a frontside and a backside opposite the frontside. A polyimide layer is disposed on the frontside of the substrate and is configured to contact the reticle stage to remove particles on the reticle stage. The polyimide layer includes radicals therein to provide the polyimide layer with a conductivity for dissipating charge on the reticle stage.
G03F 7/00 - Production par voie photomécanique, p. ex. photolithographique, de surfaces texturées, p. ex. surfaces impriméesMatériaux à cet effet, p. ex. comportant des photoréservesAppareillages spécialement adaptés à cet effet
9.
THERMAL CONDITIONING SYSTEM AND LITHOGRAPHIC APPARATUS
A thermal conditioning system for a lithographic apparatus, the thermal conditioning system including: a body having a conditioning channel for flow of a conditioning fluid for thermally conditioning the body and/or a component supported by or supporting the body; and a supply connection configured to supply the conditioning fluid to the conditioning channel of the body, the supply connection shaped such that the conditioning fluid enters the body in a first direction and flows into the conditioning channel in a second direction different from the first direction, wherein the body has a chamber adjacent to the supply connection in the first direction and configured to at least reduce a force applied by the supply connection to the body.
G03F 7/00 - Production par voie photomécanique, p. ex. photolithographique, de surfaces texturées, p. ex. surfaces impriméesMatériaux à cet effet, p. ex. comportant des photoréservesAppareillages spécialement adaptés à cet effet
A method for determining an optical property of a projection system, the method including: obtaining measured data representative of measured radiation output from the projection system; obtaining an estimated illumination profile of input radiation received by the projection system; generating, based on the estimated illumination profile, estimated data representative of estimated radiation output from the projection system; fitting the estimated data to the measured data to generate a parameter fit; and calculating, based on the parameter fit, an optical property of the projection system.
G03F 7/00 - Production par voie photomécanique, p. ex. photolithographique, de surfaces texturées, p. ex. surfaces impriméesMatériaux à cet effet, p. ex. comportant des photoréservesAppareillages spécialement adaptés à cet effet
A new optical demultiplexer is disclosed for use in a metrology system. The optical demultiplexer comprises: a body; an input; a plurality of outputs; and a plurality of optical filters. Each of the plurality of outputs comprises a lens supported by a surface of the body. The plurality of optical filters are supported by the body and are arranged such that when radiation comprising a plurality of spectral components is received at the input, a different spectral component is received by each of the plurality of outputs via the body. The lens of each of the plurality of outputs is arranged to couple the spectral component received by that output out of the body. Advantageously, such an arrangement can be significantly smaller than known optical demultiplexers, which typically comprise a large number of optical components.
G03F 7/00 - Production par voie photomécanique, p. ex. photolithographique, de surfaces texturées, p. ex. surfaces impriméesMatériaux à cet effet, p. ex. comportant des photoréservesAppareillages spécialement adaptés à cet effet
12.
APPARATUS FOR A LASER-PRODUCED PLASMA RADIATION SOURCE
An apparatus for a laser-produced plasma radiation source comprises a generally tubular body. A radially inner surface of the generally tubular body is provided with a structure configured such that radiation received by said radially inner surface from a second axial end is at least partially directed back towards the second axial end of the generally tubular body. The generally tubular body may comprise inner and outer tubular portions that define a fluid passageway which may be arranged such that an outlet of the fluid passageway directs fluid received at an inlet generally radially outwards from an axis of the generally tubular body. The apparatus may further comprise a collector provided with a concave reflective surface with a central aperture; and the generally tubular body may be disposed in the central aperture of the collector.
G03F 7/00 - Production par voie photomécanique, p. ex. photolithographique, de surfaces texturées, p. ex. surfaces impriméesMatériaux à cet effet, p. ex. comportant des photoréservesAppareillages spécialement adaptés à cet effet
13.
Lithographic apparatus and an object positioning system
A lithographic apparatus comprising an object table which carries an object. The lithographic apparatus may further comprise at least one sensor as part of a measurement system to measure a characteristic of the object table, the environment surrounding the lithographic apparatus or another component of the lithographic apparatus. The measured characteristic may be used to estimate the deformation of the object due to varying loads during operation of the lithographic apparatus, for example varying loads induced by a two-phase flow in a channel formed within the object table. Additionally, or alternatively, the lithographic apparatus comprises a predictor to estimate the deformation of the object based on a model. The positioning of the object table carrying the object can be controlled based on the estimated deformation. The positioning of a projection beam, used to pattern a substrate, can be controlled relative to the object, to alter the position of the pattern and/or the projection beam on the substrate, based on the estimated deformation.
G03F 7/00 - Production par voie photomécanique, p. ex. photolithographique, de surfaces texturées, p. ex. surfaces impriméesMatériaux à cet effet, p. ex. comportant des photoréservesAppareillages spécialement adaptés à cet effet
14.
SUBSTRATES FOR CALIBRATION OF A LITHOGRAPHIC APPARATUS
A method of calibrating a lithographic apparatus, the method including: obtaining a substrate having a Young's modulus which is substantially invariant to the orientation of an axis within the plane of the substrate along which the Young's modulus is defined and being provided with reference features; clamping the substrate to a substrate table of the lithographic apparatus; providing patterned features to the clamped substrate using the lithographic apparatus, each patterned feature being provided in proximity to a corresponding reference feature; measuring the position of each patterned feature relative to its corresponding reference feature; and calibrating a grid associated with positioning of substrates by the lithographic apparatus based on the measured positions of the patterned features.
G03F 7/00 - Production par voie photomécanique, p. ex. photolithographique, de surfaces texturées, p. ex. surfaces impriméesMatériaux à cet effet, p. ex. comportant des photoréservesAppareillages spécialement adaptés à cet effet
15.
CHARGED PARTICLE BEAM INSPECTION APPARATUS AND METHOD
A charged particle beam inspection apparatus and charged particle beam adjustment technology, and more particularly, a charged particle beam contactless electrical characterization technology is disclosed. A charged particle beam apparatus may be used to rapidly vary charged particle beam parameters to determine electrical characteristics of a sample without direct contact. The disclosed charged particle beam contactless electrical characterization technology may be applied as defect detection.
The present disclosure relates to a charged particular apparatus for projecting a multi-beam of charged particles toward a sample. In one arrangement, a sample support supports a sample. A charged particle-optical device projects beams of a multi-beam of the charged particles along a plurality of paths toward the sample. The device comprises a plurality of charged particle-optical elements that define an objective lens and in which are defined a plurality of apertures along the paths of the beams. At least two of the charged particle-optical elements are configured to be set at different potentials and at least one of the charged particle-optical elements is set at ground potential.
An apparatus for positioning a charged particle relative to a target location of a substrate, the apparatus comprising: a positioning field generator configured to generate a positioning field such that the charged particle follows a curved trajectory within the positioning field; and a substrate support configured to rotate the substrate so as to control a velocity of the charged particle relative to the target location.
The present disclosure provides systems and methods for utilizing an actuator configured to contact an object. The actuator can include a coarse stage including a coarse stage actuator that is magnetically levitated by coarse stage repelling magnets. The actuator can also include a fine stage including a fine stage actuator coupled to the coarse stage actuator, the fine stage actuator having a range of travel less than the coarse stage actuator.
G03F 7/00 - Production par voie photomécanique, p. ex. photolithographique, de surfaces texturées, p. ex. surfaces impriméesMatériaux à cet effet, p. ex. comportant des photoréservesAppareillages spécialement adaptés à cet effet
19.
OPTICAL ASSEMBLY FOR A TOPOGRAPHY MEASUREMENT SYSTEM
An optical assembly (30) for a topography measurement system, the optical assembly (30) including a plurality of optical channels each comprising: a first curved reflector (32) and a second curved reflector (34) arranged to image an object with a magnification magnitude of 1. In an embodiment, each channel comprises a first planar reflector (33) optically between the first curved reflector (32) and the second curved reflector (34); and a second planar reflector (31) located such that the first curved reflector (32) is optically between the first planar reflector (33) and the second planar reflector (31).
G01B 11/25 - Dispositions pour la mesure caractérisées par l'utilisation de techniques optiques pour mesurer des contours ou des courbes en projetant un motif, p. ex. des franges de moiré, sur l'objet
G02B 17/00 - Systèmes avec surfaces réfléchissantes, avec ou sans éléments de réfraction
G02B 17/06 - Systèmes catoptriques, p. ex. systèmes redressant et renversant une image utilisant uniquement des miroirs
G03F 9/00 - Mise en registre ou positionnement d'originaux, de masques, de trames, de feuilles photographiques, de surfaces texturées, p. ex. automatique
20.
LITHOGRAPHIC APPARATUS AND DEVICE MANUFACTURING METHOD
Cloin, Christian Gerardus Norbertus Hendricus Marie
Yakunin, Andrei Mikhailovich
Van De Kerkhof, Marcus Adrianus
Abrégé
A lithographic apparatus including: an illumination system for providing a beam of EUV radiation along a beam path; a holder for a patterning device configured to impart a pattern to the beam of radiation, the patterning device comprising a patterning surface with a pattern thereon; and an electron beam source configured to emit electrons toward the patterning surface and/or a part of the beam path adjacent the patterning surface.
G03F 7/00 - Production par voie photomécanique, p. ex. photolithographique, de surfaces texturées, p. ex. surfaces impriméesMatériaux à cet effet, p. ex. comportant des photoréservesAppareillages spécialement adaptés à cet effet
An improved vacuum chamber for a system handling a wafer is provided. The vacuum chamber may comprise a top wall wherein at least a portion of an interior surface of the top wall is slanted relative to a side view of the top wall. The vacuum chamber may further comprise a gas vent port coupled to the top wall and a baffle coupled to the vacuum chamber and positioned below the gas vent port, wherein the baffle is configured to reduce turbulence of gas that enters the vacuum chamber via the gas vent port.
An electron beam source is configured in an ultra-high vacuum chamber. Gas molecules are prevented from reaching an emission tip of the electron source by a differential aperture system. The differential aperture system may comprise at least one aperture plate configured to seal a region of the vacuum chamber from an outgassing source so that gas molecules may only pass from the source to the region by holes in the at least one aperture plate.
H01J 37/317 - Tubes à faisceau électronique ou ionique destinés aux traitements localisés d'objets pour modifier les propriétés des objets ou pour leur appliquer des revêtements en couche mince, p. ex. implantation d'ions
H01J 37/09 - DiaphragmesÉcrans associés aux dispositifs électronoptiques ou ionoptiquesCompensation des champs perturbateurs
A substrate alignment apparatus is described. An illumination system receives a beam of source radiation from a radiation source and directs the beam of source radiation toward a pupil plane. An optical component is positioned at the pupil plane to direct component beams of the beam of source radiation toward a plurality of alignment marks on a substrate. At least one objective module is disposed between the optical component and the substrate and focuses the separate beams on corresponding separate ones of the plurality of alignment marks. An interferometer receives beams of diffracted radiation that are diffracted from the plurality of alignment marks, collected by the at least one objective module, and directed to the interferometer by the optical component.
G03F 9/00 - Mise en registre ou positionnement d'originaux, de masques, de trames, de feuilles photographiques, de surfaces texturées, p. ex. automatique
G03F 7/00 - Production par voie photomécanique, p. ex. photolithographique, de surfaces texturées, p. ex. surfaces impriméesMatériaux à cet effet, p. ex. comportant des photoréservesAppareillages spécialement adaptés à cet effet
24.
METHOD OF SETTING UP A PROJECTION EXPOSURE SYSTEM, A PROJECTION EXPOSURE METHOD AND A PROJECTION EXPOSURE SYSTEM FOR MICROLITHOGRAPHY
In a method of setting up a projection exposure system for exposing a radiation sensitive substrate, the projection exposure system comprises an illumination system; a projection lens; a measuring system; and an operating control system comprising at least one manipulator operatively connected to an optical element of the projection exposure system. The method comprises the step of determining, in a measuring point distribution calculation, a measuring point distribution defining a number and positions of measuring points to be used in a measurement, wherein the measuring point distribution calculation is performed under boundary conditions representing at least: (i) manipulation capacities of the operating control system; (ii) measuring capacities of the measuring system; and (iii) predefined use case scenarios defining a set of representative use cases.
G03F 7/00 - Production par voie photomécanique, p. ex. photolithographique, de surfaces texturées, p. ex. surfaces impriméesMatériaux à cet effet, p. ex. comportant des photoréservesAppareillages spécialement adaptés à cet effet
25.
ILLUMINATION SOURCE AND ASSOCIATED METROLOGY APPARATUS
Disclosed is an illumination source comprising a gas delivery system being configured to provide a gas target for generating an emitted radiation at an interaction region of the gas target, and an interferometer for illuminating at least part of the gas target with an interferometer radiation to measure a property of the gas target.
G01B 9/02001 - Interféromètres caractérisés par la commande ou la génération des propriétés intrinsèques du rayonnement
G03F 7/00 - Production par voie photomécanique, p. ex. photolithographique, de surfaces texturées, p. ex. surfaces impriméesMatériaux à cet effet, p. ex. comportant des photoréservesAppareillages spécialement adaptés à cet effet
H05G 2/00 - Appareils ou procédés spécialement adaptés à la production de rayons X, n'utilisant pas de tubes à rayons X, p. ex. utilisant la génération d'un plasma
A method for determining a process window of a patterning process based on a failure rate. The method includes obtaining a plurality of features printed on a substrate, grouping, based on a metric, the features into a plurality of groups, and generating, based on measurement data associated with a group of features, a base failure rate model for the group of features, wherein the base failure rate model identifies the process window related to the failure rate of the group of features. The method can further include generating, using the base failure rate model, a feature-specific failure rate model for a specific feature, wherein the feature-specific failure rate model identifies a feature-specific process window such that an estimated failure rate of the specific feature is below a specified threshold.
G03F 7/00 - Production par voie photomécanique, p. ex. photolithographique, de surfaces texturées, p. ex. surfaces impriméesMatériaux à cet effet, p. ex. comportant des photoréservesAppareillages spécialement adaptés à cet effet
Disclosed herein is a thermal barrier element for a lens element. The thermal barrier element comprises a foil arrangement to be laminated to an outer surface of the lens element, and one or more conductive wires embedded in the foil arrangement. The conductive wires form strain gauges. A resistance of the one or more conductive wires changes as the foil arrangement delaminates from said outer surface.
G03F 7/00 - Production par voie photomécanique, p. ex. photolithographique, de surfaces texturées, p. ex. surfaces impriméesMatériaux à cet effet, p. ex. comportant des photoréservesAppareillages spécialement adaptés à cet effet
G02B 7/02 - Montures, moyens de réglage ou raccords étanches à la lumière pour éléments optiques pour lentilles
28.
METHOD OF FORMING AN ILLUMINATION MODE, METHOD OF EXPOSING A SUBSTRATE AND ILLUMINATION SYSTEM
A method of forming an illumination mode using an illumination system comprising an array of individually controllable reflective elements arranged to direct portions of a radiation beam to desired locations in a pupil plane. The method comprises allocating different reflective elements of the array to direct radiation to different locations in the illumination mode by: determining a desired power spectral density function of radiation directed by the array of reflective elements to the illumination mode, the desired power spectral density function including a cutoff frequency; applying different phases to frequency components of the power spectral density function; transforming the power spectral density function into a spatial domain signal that varies as a function of positions of the reflective elements; and using the spatial domain signal to allocate reflective elements that direct radiation to different locations in the illumination mode.
G03F 7/00 - Production par voie photomécanique, p. ex. photolithographique, de surfaces texturées, p. ex. surfaces impriméesMatériaux à cet effet, p. ex. comportant des photoréservesAppareillages spécialement adaptés à cet effet
A radiation source comprising: an electron source configured to generate pulses of electrons; a laser source configured to generate a laser beam, the laser source and the electron source being arranged such that the pulses of electrons collide with the laser beam at an interaction point to generate output radiation; and an optomechanical component configured for adjusting an angle of incidence between the laser beam and the pulses of electrons at the interaction point.
H05G 2/00 - Appareils ou procédés spécialement adaptés à la production de rayons X, n'utilisant pas de tubes à rayons X, p. ex. utilisant la génération d'un plasma
30.
ELECTROSTATIC DISCHARGE DETECTION IN EXPOSURE APPARATUS
A detection system for use in an exposure apparatus comprises at least two radio frequency receivers (ANT) configured to receive signals in the exposure apparatus. The detection system further comprises a signal processing unit (SPU) comprising a software defined radio (SDR) configured to process the received signals. The signal processing unit (SPU) is further configured to determine an occurrence of a discharge of charged particles in the exposure apparatus from the processed signals.
G03F 7/00 - Production par voie photomécanique, p. ex. photolithographique, de surfaces texturées, p. ex. surfaces impriméesMatériaux à cet effet, p. ex. comportant des photoréservesAppareillages spécialement adaptés à cet effet
A charged particle detector including: an array of sensing elements configured to generate an electrical signal in response to charged particles and arranged in rows; an array of optical modulators each connected to a respective one of the sensing elements and configured to modulate a sensing light beam in response to the electrical signal; a plurality of waveguides configured to direct each of a plurality of sensing light beams through a row of the optical modulators; a beam combiner configured to combine the plurality of sensing light beams having passed through respective rows of the optical modulator into a combined beam; and a read out unit configured to measure the modulation of the combined beam to detect charged particles incident on the sensing elements.
A beam modifier and metrology system having such a beam modifier is described. Metasurfaces are used to replace (or to augment) an existing objective lens to focus radiation such as light, tune a focal length, and/or correct aberrations in the metrology system. A metasurface is configured to receive a diffracted incident radiation beam, with the diffracted incident radiation beam having a known wavelength range and transmit separate narrower band sub-beams of radiation having a modified amplitude, phase, and/or polarization in comparison to the diffracted incident radiation. The metasurface includes different sub-portions configured to transmit the separate narrower band sub-beams of radiation. The different sub-portions are configured for different non-overlapping radiation wavelength bandwidths within the known wavelength range.
G03F 7/00 - Production par voie photomécanique, p. ex. photolithographique, de surfaces texturées, p. ex. surfaces impriméesMatériaux à cet effet, p. ex. comportant des photoréservesAppareillages spécialement adaptés à cet effet
G02B 1/00 - Éléments optiques caractérisés par la substance dont ils sont faitsRevêtements optiques pour éléments optiques
33.
AN ACTUATION STAGE, AN ELECTROMAGNET APPARATUS, AND METHOD OF FABRICATION
A stage (500) for supporting and moving an object (502) includes an electromagnet (510), first and second support structures (504; 506), a target (508), and a target-side bumper structure. The electromagnet can comprise a core, a wire coil (512), and a core-side bumper affixed to the core. The core, disposed on the first support structure (506), is made from magnetically permeable material. The core is shaped to have poles facing a same direction. The wire coil generates a magnetic field. The second support structure (504) supports and moves the object relative to the first support structure. The target (508) is disposed on the second support structure (504) to actuate the second support structure in response to the magnetic field. The target-side bumper structure is affixed to the target and can collide with the core-side bumper structure to establish a collision avoidance gap between the core and the target. An uncertainty value of the collision avoidance gap is less than 20 microns.
H01F 7/20 - Électro-aimantsActionneurs comportant des électro-aimants sans armature
G03F 7/00 - Production par voie photomécanique, p. ex. photolithographique, de surfaces texturées, p. ex. surfaces impriméesMatériaux à cet effet, p. ex. comportant des photoréservesAppareillages spécialement adaptés à cet effet
H01F 41/02 - Appareils ou procédés spécialement adaptés à la fabrication ou à l'assemblage des aimants, des inductances ou des transformateursAppareils ou procédés spécialement adaptés à la fabrication des matériaux caractérisés par leurs propriétés magnétiques pour la fabrication de noyaux, bobines ou aimants
A system includes a first container and a second container. The first container receives a patterning device and maintains a predetermined environment inside the first container. The second container receives the first container and maintains a vacuum inside the second container. The second container includes a flange, a first end, and a second end. The flange is located on an exterior of the second container. The second container can be gripped and transported via the flange. The first end includes a vacuum valve and a purge valve. The vacuum valve facilitates removal of gas from the second container. The purge valve facilitates introduction of gas into the second container. The vacuum valve and the purge valve interface with a first external vacuum environment. The second end opposite the first end and the second end has an opening. The opening allows the removal of the first container from the second container.
G03F 1/66 - Réceptacles spécialement adaptés aux masques, aux masques vierges ou aux pelliculesLeur préparation
G03F 7/00 - Production par voie photomécanique, p. ex. photolithographique, de surfaces texturées, p. ex. surfaces impriméesMatériaux à cet effet, p. ex. comportant des photoréservesAppareillages spécialement adaptés à cet effet
Disclosed herein is a computer system configured to: control a lithographic process performed on a first substrate with a reticle that is in a cold state; determine one or more performance metrics of the lithographic process in dependence on an inspection of the first substrate; determine clamping-induced deformation modes of the reticle in dependence on the one or more performance metrics; and determine and control the application of process corrections to a lithographic process performed on a second substrate in dependence on the determined clamping-induced deformation modes.
G03F 7/00 - Production par voie photomécanique, p. ex. photolithographique, de surfaces texturées, p. ex. surfaces impriméesMatériaux à cet effet, p. ex. comportant des photoréservesAppareillages spécialement adaptés à cet effet
36.
METHODS AND SYSTEMS FOR DETERMINING RETICLE DEFORMATIONS
Disclosed herein is a computer system configured to perform, before performing a lithographic process on a first substrate in a lot of substrates, reticle alignment, RA, measurements with a first and second plurality of edge markers of the reticle. The reticle deformation model determines shape and/or deformation of the reticle in dependance on the RA measurements. A lithographic process performed on the first substrate is controlled in dependence on the determined shape and/or deformation. Before performing a lithographic process on a second substrate in the lot of substrates, further RA measurements are performed. The reticle deformation model determines the deformation of the reticle when performing a lithographic process on the second substrate in dependance on the further RA measurements and the previous RA measurements.
G03F 7/00 - Production par voie photomécanique, p. ex. photolithographique, de surfaces texturées, p. ex. surfaces impriméesMatériaux à cet effet, p. ex. comportant des photoréservesAppareillages spécialement adaptés à cet effet
G03F 1/42 - Aspects liés à l'alignement ou au cadrage, p. ex. marquages d'alignement sur le substrat du masque
A EUV utilization system comprising a radiation source comprising a drive laser configured to generate drive laser radiation for irradiating a fuel and thereby generating extreme ultraviolet radiation. The EUV utilization system comprises a EUV utilization apparatus configured to receive extreme ultraviolet radiation directed through an optical aperture located between the radiation source and the EUV utilization apparatus. The EUV utilization apparatus comprises a radiation shield configured to block at least a portion of the drive laser radiation that propagates through the optical aperture.
H05G 2/00 - Appareils ou procédés spécialement adaptés à la production de rayons X, n'utilisant pas de tubes à rayons X, p. ex. utilisant la génération d'un plasma
G03F 7/00 - Production par voie photomécanique, p. ex. photolithographique, de surfaces texturées, p. ex. surfaces impriméesMatériaux à cet effet, p. ex. comportant des photoréservesAppareillages spécialement adaptés à cet effet
A computer system configured to: model, using boundary conditions that are dependent on a first state of a reticle during a first time period, the deformation of the reticle during the first time period; model, using boundary conditions that are dependent on a second state of the reticle during a second time period, the deformation of the reticle during the second time period; and control the operation of a lithographic process in dependence on the modelled deformation of the reticle, wherein: the first state of the reticle is different from the second state of the reticle; and the modelled deformation of the reticle at the start of the second time period is based on the modelled deformation of the reticle at the end of the first time period.
G03F 7/00 - Production par voie photomécanique, p. ex. photolithographique, de surfaces texturées, p. ex. surfaces impriméesMatériaux à cet effet, p. ex. comportant des photoréservesAppareillages spécialement adaptés à cet effet
G03F 1/82 - Procédés auxiliaires, p. ex. nettoyage ou inspection
39.
METHOD TO INFER AND ESTIMATE RETICLE TEMPERATURE BASED ON RETICLE SHAPE MEASUREMENTS
Embodiments herein describe systems, methods, and devices for determining reticle temperature based on reticle shape measurements. System can comprises an illumination path configured to direct radiation onto a patterning device and a detection path configured to direct a portion of the radiation, after interaction with the patterning device, onto a detector configured to output a signal representative of the portion of the radiation beam. A controller can to receive the signal, determine information about a physical characteristic or alignment of the patterning device, and use the information to estimate a load temperature of the patterning device. The controller or another controller can estimated load temperature to compensate for temperature-induced magnification of the patterning device. The controller or the another controller compensates by adjusting a positioning of a stage or lens of the system.
G03F 7/00 - Production par voie photomécanique, p. ex. photolithographique, de surfaces texturées, p. ex. surfaces impriméesMatériaux à cet effet, p. ex. comportant des photoréservesAppareillages spécialement adaptés à cet effet
40.
LITHOGRAPHIC APPARATUS AND INSPECTION SYSTEM FOR MEASURING WAFER DEFORMATION
A system for measuring deformation of a substrate includes an illuminator, a camera, a modulator system, and a controller. The illuminator directs two beams of radiation at each target of a plurality of targets disposed on the substrate to produce two beams of scattered radiation from each target. The camera detects interference patterns of the two beams of scattered radiation from the plurality of targets and generates an interferogram based on the interference pattern. The modulator system adjusts the interference patterns by adjusting a relative phase of the two beams of radiation. The controller analyzes the measurement signal to determine the deformation of the substrate based on the interferogram and the adjusting of the relative phase.
G01B 11/16 - Dispositions pour la mesure caractérisées par l'utilisation de techniques optiques pour mesurer la déformation dans un solide, p. ex. indicateur optique de déformation
G03F 7/00 - Production par voie photomécanique, p. ex. photolithographique, de surfaces texturées, p. ex. surfaces impriméesMatériaux à cet effet, p. ex. comportant des photoréservesAppareillages spécialement adaptés à cet effet
G03F 9/00 - Mise en registre ou positionnement d'originaux, de masques, de trames, de feuilles photographiques, de surfaces texturées, p. ex. automatique
Disclosed is a method of metrology comprising: illuminating a periodic structure with measurement illumination, the periodic structure comprising a pitch greater than 17 nm and detecting resultant scattered radiation comprising a plurality of diffraction orders. The measurement illumination comprises an illumination profile configured to either: substantially prevent overlap of the diffraction orders while providing a plurality of angles of incidence on the periodic structure which span a range greater than 10 degrees in at least one direction; or impose discontinuities in a measurement signal described by the scattered radiation as represented in pupil space, the discontinuities enabling the diffraction orders to be distinguished at least at respective locations in the pupil space of a plurality of illumination edges of the illumination profile.
G03F 7/00 - Production par voie photomécanique, p. ex. photolithographique, de surfaces texturées, p. ex. surfaces impriméesMatériaux à cet effet, p. ex. comportant des photoréservesAppareillages spécialement adaptés à cet effet
G01N 21/956 - Inspection de motifs sur la surface d'objets
42.
PROTECTIVE MEMBRANE FOR AN EXPOSURE APPARATUS AND METHOD
There is provided a protective membrane for an exposure apparatus for semiconductor manufacturing processes, the protective membrane comprising a boron nitride nanotube core (203) and at least one containment layer (103) configured to contain particles (213) released from the core. Also provided is a component of an exposure apparatus for semiconductor manufacturing processes comprising such a protective membrane, as well as an exposure apparatus for semiconductor manufacturing processes comprising such a protective membrane or component. Also described is a method of manufacturing a protective membrane for an exposure apparatus for semiconductor manufacturing processes as well as a method of reconditioning a boron nitride nanotube protective membrane for an exposure apparatus for semiconductor manufacturing processes. Finally, the use of such a protective membrane, component, exposure apparatus or method in a semiconductor manufacturing process or apparatus therefor is also described.
G03F 1/62 - Pellicules, p. ex. assemblage de pellicules ayant une membrane sur un cadre de supportLeur préparation
G03F 7/00 - Production par voie photomécanique, p. ex. photolithographique, de surfaces texturées, p. ex. surfaces impriméesMatériaux à cet effet, p. ex. comportant des photoréservesAppareillages spécialement adaptés à cet effet
43.
SELFGUIDED DIFFUSION MODELS FOR UNPAIRED AND WEAKLY PAIRED DATA WITH APPLICATIONS IN THE MANUFACTURE OF INTEGRATED CIRCUITS
A computer-implemented method of processing first metrology data of a patterned portion of a substrate patterned using a wafer processing apparatus to generate predicted second metrology data of the, or another corresponding, patterned portion of the substrate, the first metrology data comprising metrology data from a first metrology domain which obtains metrology data using a first metrology process. The method comprises obtaining the first metrology data of the patterned portion of the substrate, and generating predicted second metrology data of the patterned portion of the substrate, or of the corresponding patterned portion of the substrate, based on the output of a first trained diffusion model conditioned on the first metrology data, the predicted second metrology data comprising predicted metrology data from a second metrology domain which obtains metrology data using a second metrology process.
G03F 7/00 - Production par voie photomécanique, p. ex. photolithographique, de surfaces texturées, p. ex. surfaces impriméesMatériaux à cet effet, p. ex. comportant des photoréservesAppareillages spécialement adaptés à cet effet
44.
PROTECTIVE BARRIER FOR AN EXPOSURE APPARATUS AND METHOD
There is provided a protective membrane (16) for an exposure apparatus (LA) for semiconductor manufacturing processes, the protective membrane (16) comprising boron nitride nanotubes. A component (15) of an exposure apparatus (LA) for semiconductor manufacturing processes comprising such protective membrane (16) is also described. Also provided is an exposure apparatus (LA) for semiconductor manufacturing processes comprising such a protective membrane (16) or component (15). Also described is the use of boron nitride nanotubes as a protective layer in semiconductor manufacturing processes or in an apparatus therefor.
G03F 1/62 - Pellicules, p. ex. assemblage de pellicules ayant une membrane sur un cadre de supportLeur préparation
B82Y 30/00 - Nanotechnologie pour matériaux ou science des surfaces, p. ex. nanocomposites
G03F 7/00 - Production par voie photomécanique, p. ex. photolithographique, de surfaces texturées, p. ex. surfaces impriméesMatériaux à cet effet, p. ex. comportant des photoréservesAppareillages spécialement adaptés à cet effet
45.
PLASMA DEVICE AND METHOD OF OPERATING A PLASMA DEVICE
The invention relates to a plasma device, comprising a plasma source (15), a vacuum chamber (14) and an EUV component (20, 46, 47, 48, 49). The EUV component (20, 46, 47, 48, 49) is arranged in an interior space (38) of the vacuum chamber (14). The plasma source (15) is designed to generate a plasma acting on the EUV component (20, 46, 47, 48, 49). The plasma source (15) comprises a microwave generator (24, 25) designed to transmit microwaves into a spatial region (23) of the plasma source (15), wherein a layer (31) of yttrium oxide is arranged between the spatial region (23) and the interior space (38) of the vacuum chamber (14). The invention also relates to a method for operating a plasma device.
Disclosed is an apparatus and method in which one or more trained classifiers are used to determine whether to perform an automated containment action and, if an automated containment action is to be performed, which automated containment action is to be performed with less invasive automated containment actions being performed first and more invasive automated containment actions subsequently being performed only of the less invasive automated containment actions are ineffective. Also disclosed is an apparatus and method in which a first data type is used to train a first classifier which is then used to obtain a first classification and then the first classification is used to train a second classifier to classify a second data type.
An inspection system includes a radiation source, a multimode optical fiber, an optical structure, a two-dimensional detector array, and a computing device. The radiation source irradiates a target to generate scattered radiation from the target. The scattered radiation includes a diffraction order pair. The multimode optical fiber receives the scattered radiation and outputs a mix of the diffraction order pair based on a propagation property of the multimode optical fiber. The optical structure combines the diffraction order pair at an input side of the multimode optical fiber. The two-dimensional detector array receives the mix of the diffraction order pair and generates a measurement signal corresponding to the mix of the diffraction order pair. The computing device analyzes the measurement signal based on the propagation property and discriminates intensities of the diffraction order pair based on the analyzing.
G03F 7/00 - Production par voie photomécanique, p. ex. photolithographique, de surfaces texturées, p. ex. surfaces impriméesMatériaux à cet effet, p. ex. comportant des photoréservesAppareillages spécialement adaptés à cet effet
48.
METHODS AND SYSTEMS FOR DETERMINING RETICLE DEFORMATIONS
A computer system is configured to initialize a reticle heating model in dependence on reference data for a reticle in a cold state and a reticle alignment measurement of the reticle. States of the reticle heating model are updated as the lithographic processes are performed on the first lot of substrates. Current states of the reticle heating model are stored. Reticle handling data is generated. It is determined whether the reticle is in a hot state or a cold state in dependence on reticle handling data. If the reticle is determined to be in the hot state, the starting state for the reticle heating model is configured in dependence on the stored states. If the reticle is determined to be in the cold state, the reticle heating model is re-initialized in dependence on reference data for the reticle in a cold state and the reticle alignment measurement of the reticle.
G03F 7/00 - Production par voie photomécanique, p. ex. photolithographique, de surfaces texturées, p. ex. surfaces impriméesMatériaux à cet effet, p. ex. comportant des photoréservesAppareillages spécialement adaptés à cet effet
49.
LITHOGRAPHIC APPARATUS THERMAL CONDITIONING SYSTEM AND METHOD
A thermal conditioning system is configured to thermally condition an object. The thermal conditioning system comprises a fluid duct configured to be connected to the object and configured to provide a flow of a thermal conditioning fluid to the object The fluid duct comprises a supply duct configured to be connected to the object and to supply the thermal conditioning fluid to the object and a discharging duct 5 configured to be connected to the object and to discharge the thermal conditioning fluid from the object. The supply duct and/or the discharging duct are each provided with at least two silencers arranged in series along the supply duct and along the discharging duct respectively.
G03F 7/00 - Production par voie photomécanique, p. ex. photolithographique, de surfaces texturées, p. ex. surfaces impriméesMatériaux à cet effet, p. ex. comportant des photoréservesAppareillages spécialement adaptés à cet effet
50.
RECESS-BASED PICK AND PLACE FOR HETEROGENEOUS INTEGRATION
An apparatus for die placement including a first stage having a plurality of recesses, the plurality of recesses configured to accept a plurality of donor dies; a second stage including a support for one or more targets; and a measurement system, functionally coupled to the first stage, and configured to: obtain locations of the plurality of donor dies in the plurality of recesses of the first stage, and based at least on the obtained locations, provide output signals to adjust the locations of the plurality of donor dies supported by the first stage to correspond to locations of the one or more targets, and based at least in part on the adjusted locations, provide output signals to place the plurality of donor dies on the one or more targets supported by the second stage by relative movement between the first stage and the second stage.
Disclosed herein is a computer system configured to use a reticle heating model to determine the shape and/or deformation of a reticle and control the operation of a lithographic process that uses the reticle in dependence on the modelled shape and/or deformation. The computer system is configured to determine, in dependence on generated reticle process data and known thermal properties of the reticle, that a long track hiccup has occurred and in response to determining that a long track hiccup has occurred, reconfigure the reticle heating model to the same state initialized states used at the start of performing lithographic processes on the lot of substrates.
G03F 7/00 - Production par voie photomécanique, p. ex. photolithographique, de surfaces texturées, p. ex. surfaces impriméesMatériaux à cet effet, p. ex. comportant des photoréservesAppareillages spécialement adaptés à cet effet
52.
APPARATUS AND METHODS FOR GENERATING DENOISING MODEL
Described herein is a method for training a denoising model. The method includes obtaining a first set of simulated images based on design patterns. The simulated images may be clean and can be added with noise to generate noisy simulated images. The simulated clean and noisy images are used as training data to generate a denoising model.
A safety mechanism for a patterning device of a lithographic apparatus, the safety mechanism comprising: a support structure configured to secure the patterning device on a support region of the support structure; and a plurality of magnetic elements located outwardly of the support region, wherein the magnetic elements are arranged such that magnetic force between the magnetic elements and complementary magnetic members fixed relative to the patterning device exerts a force on the patterning device towards the support structure.
G03F 7/00 - Production par voie photomécanique, p. ex. photolithographique, de surfaces texturées, p. ex. surfaces impriméesMatériaux à cet effet, p. ex. comportant des photoréservesAppareillages spécialement adaptés à cet effet
A modular conditioning apparatus may include a core having a first surface polished to optical contact quality. The modular conditioning apparatus may include a conditioning sheet having a grinding surface and a second surface opposite the grinding surface. The second surface is polished to the optical contact quality for optically contacting the first surface such that that the conditioning sheet is removably bonded to the core.
B24B 35/00 - Machines ou dispositifs pour le superfinissage des surfaces, c.-à-d. pour le travail au moyen de blocs abrasifs animés d'un mouvement de va-et-vient à haute fréquence
An object support comprising a main body that comprises a multi-phase material comprising grains of a harder material in a matrix of a softer material and a plurality of burls projecting from the main body to define a support plane for supporting an object; wherein the burls include mini-burls that consist essentially of a single grain of the harder material.
G03F 7/00 - Production par voie photomécanique, p. ex. photolithographique, de surfaces texturées, p. ex. surfaces impriméesMatériaux à cet effet, p. ex. comportant des photoréservesAppareillages spécialement adaptés à cet effet
An inspection system includes a radiation source, an integrated optical system, and first and second detectors. The radiation source generates radiation to irradiate a target. The integrated optical system includes: a substrate; first, second, third, and fourth waveguides; first and second grating couplers; a first combiner coupled to the first and second waveguides; and a second combiner coupled to the third and fourth waveguides. The first grating coupler couples first and third portions of radiation scattered by the target respectively into the first and third waveguides. The second grating coupler couples second and fourth portions of radiation scattered by the target respectively into the second and fourth waveguides. The first combiner can combine the first and second portions of radiation. The second combiner can combine the third and fourth portions of radiation. The first and second detectors generate measurement signals based on the corresponding combined portions of radiation.
G03F 7/00 - Production par voie photomécanique, p. ex. photolithographique, de surfaces texturées, p. ex. surfaces impriméesMatériaux à cet effet, p. ex. comportant des photoréservesAppareillages spécialement adaptés à cet effet
A method for calibrating a height measuring optical sensor for a substrate in a lithographic apparatus. The method comprises determining, using the height measuring optical sensor, a first height of a surface of the substrate within a region of interest. The method further comprises determining, using a scanning probe microscope, a second height of the surface of the substrate within the region of interest. The method further comprises determining a calibration map for the height measuring optical sensor for the region of interest, by comparing the first height and the second height.
G01B 11/06 - Dispositions pour la mesure caractérisées par l'utilisation de techniques optiques pour mesurer la longueur, la largeur ou l'épaisseur pour mesurer l'épaisseur
G01Q 60/24 - Microscopie à forces atomiques AFM [Atomic Force Microscopy] ou appareils à cet effet, p. ex. sondes AFM
G03F 7/00 - Production par voie photomécanique, p. ex. photolithographique, de surfaces texturées, p. ex. surfaces impriméesMatériaux à cet effet, p. ex. comportant des photoréservesAppareillages spécialement adaptés à cet effet
58.
A DROPLET STREAM ALIGNMENT MECHANISM AND METHOD THEREOF
A system (600) includes first (604) and second (606) portions of an alignment mechanism. The first portion is coupled to a nozzle (602) within a droplet generation device. The second portion is coupled to an outside surface (608) of the droplet generation device. The second portion comprises a second adjustment mechanism (612) to adjust a first adjustment mechanism (610) of the first portion in order to align the nozzle such that droplets travel from the nozzle substantially along a droplet path (614).
H05G 2/00 - Appareils ou procédés spécialement adaptés à la production de rayons X, n'utilisant pas de tubes à rayons X, p. ex. utilisant la génération d'un plasma
59.
SYSTEMS AND METHODS FOR SEQUENTIAL AND PARALLEL OPTICAL DETECTION OF ALIGNMENT MARKS
A sensor apparatus includes a sensor array and a metrology stage coupled to the sensor array. The sensor array includes a plurality of sensors. Each sensor of the sensor array is configured to illuminate radiation to a diffraction target on a substrate and detect a signal beam including diffraction order sub-beams diffracted from the diffraction target. The metrology stage is configured to move the sensor array relative to the substrate. The sensor apparatus is configured to measure a plurality of diffraction targets on the substrate at a rate based on a density of the plurality of sensors relative to the plurality of diffraction targets.
G01B 11/27 - Dispositions pour la mesure caractérisées par l'utilisation de techniques optiques pour mesurer des angles ou des cônesDispositions pour la mesure caractérisées par l'utilisation de techniques optiques pour tester l'alignement des axes pour tester l'alignement des axes
Cloin, Christian Gerardus Norbertus Hendricus Marie
Hossain, Tahmid
Abrégé
A lithographic patterning device contamination control system comprising a support structure configured to support a patterning device, and an electron beam source configured to emit a beam of electrons such that at least part of the beam is incident on a patterned face of a patterning device supported by the support structure during EUV exposure.
G03F 7/00 - Production par voie photomécanique, p. ex. photolithographique, de surfaces texturées, p. ex. surfaces impriméesMatériaux à cet effet, p. ex. comportant des photoréservesAppareillages spécialement adaptés à cet effet
61.
CHARGED PARTICLE DEVICE AND CHARGED PARTICLE APPARATUS
A charged particle device for projecting a multi-beam of charged particles towards a sample. The device includes a plurality of sources configured to emit a respective source beam of charged particles along a respective path of a beam grid, including a plurality of charged particle beams, toward the sample. The device further includes one or more elements in which an array of apertures is defined. The one or more elements respectively including a plurality of beam areas assigned to an individual source beam. The one or more elements is configured to operate on the charged particle beams in the beam grids of the individual source beam. Each element is separated from an adjoining element by a spacer, the spacer having at least one aperture positioned to correspond to the position of at least two beam areas.
H01J 37/317 - Tubes à faisceau électronique ou ionique destinés aux traitements localisés d'objets pour modifier les propriétés des objets ou pour leur appliquer des revêtements en couche mince, p. ex. implantation d'ions
A method for controlling an exposure dose at a substrate utilizing a masking device, which device includes a first blade and a second blade. The method includes providing radiation pulses at the masking device for exposing the substrate, exposing an exposure area at the substrate by moving the first blade in a first direction relative to a slit center and by moving the second blade in a second direction, with the second direction being opposite to the first direction, and keeping an amount of radiation received at the exposure area constant, wherein moving the first and second blade is defined by a velocity profile of a substrate support supporting the substrate.
G03F 7/00 - Production par voie photomécanique, p. ex. photolithographique, de surfaces texturées, p. ex. surfaces impriméesMatériaux à cet effet, p. ex. comportant des photoréservesAppareillages spécialement adaptés à cet effet
63.
SYSTEMS AND METHODS FOR COMPENSATING EFFECTS OF CHARGE SHARING IN CHARGED PARTICLE DETECTORS
Systems and methods for compensating effects of charge sharing in charged particle detectors and minimizing the miscount rate by adjusting the threshold energy level selected to detect an incident charged particle are disclosed herein. An electron counting detector is disclosed. The detector comprises a semiconductor device comprising an electron sensitive surface configured to generate a charge based on an incident electron energy, and a charged-particle detection circuit associated with the semiconductor device and configured to output a first signal indicating detection of an electron when the generated charge is equal to or greater than a threshold energy determined based on a first energy value corresponding to a detector baseline value and a second energy value corresponding to a signal ceiling value.
A metrology system for determining a characteristic of a structure on a substrate. The metrology system comprises an illumination source to output radiation to an objective. The objective is configured to direct radiation toward the structure on the substrate and direct radiation diffracted from the structure toward a detector. The detector comprises an event based camera to detect changes in intensity of radiation incident on the event based camera, and outputs an event data stream conveying the detected events. The detector comprises an edge detector o receive the event data stream and to output movement detection data representing a movement of the structure on the substrate relative to the objective or camera. The detector comprises a processor to receive the output movement detection data and determine the characteristic of the structure on the substrate based on the movement detection data and 0 properties of the structure on the substrate.
G03F 9/00 - Mise en registre ou positionnement d'originaux, de masques, de trames, de feuilles photographiques, de surfaces texturées, p. ex. automatique
G03F 7/00 - Production par voie photomécanique, p. ex. photolithographique, de surfaces texturées, p. ex. surfaces impriméesMatériaux à cet effet, p. ex. comportant des photoréservesAppareillages spécialement adaptés à cet effet
An object holder configured to support an object, the object holder including a first conductive layer provided between a first insulating layer and a second insulating layer, a second conductive layer provided between the second insulating layer and a third insulating layer, a plurality of burls, each burl of the plurality of burls having an object receiving surface and a layer of resistive or conductive material provided on at least one or each burl of the plurality of burls such that the layer of resistive or conductive material electrically connects the object receiving surface of the at least one or each burl of the plurality of burls to the first conductive layer.
G03F 7/00 - Production par voie photomécanique, p. ex. photolithographique, de surfaces texturées, p. ex. surfaces impriméesMatériaux à cet effet, p. ex. comportant des photoréservesAppareillages spécialement adaptés à cet effet
An optical system includes at least one position sensor and adjustable optics and is arranged to receive a radiation beam and to direct the radiation beam to an illumination region. The at least one position sensor is operable to determine a position of part of the optical system. The adjustable optics is configured to control an optical path of the received radiation beam in dependence on the determined position of the part of the optical system. The adjustable optics may be configured to at least partially correct for any variations in a spatial and/or angular distribution of the radiation at the illumination region that result from any deviations in the determined position from a nominal position. The optical system may include an illumination system for an imaging apparatus (for example a lithographic apparatus). A corresponding method of providing radiation to an illumination region via an optical system is also described.
G03F 7/00 - Production par voie photomécanique, p. ex. photolithographique, de surfaces texturées, p. ex. surfaces impriméesMatériaux à cet effet, p. ex. comportant des photoréservesAppareillages spécialement adaptés à cet effet
67.
METHOD OF OPERATING A MICROLITHOGRAPHIC PROJECTION EXPOSURE APPARATUS
A method of operating a microlithographic projection exposure apparatus (10) includes: providing a wave front deviation (50) of the projection lens and determining a control command (42) including travels for the manipulator system for correcting the wave front deviation using a model (60). The model describes the wave front deviation as a function of the travel variables and has a group of offset coefficients (62), which are independent of the travel variables, a group of linear coefficients (64), which are each attributed to one of the travel variables to the power of one, and a group of quadratic coefficients (66), which are each attributed to a product of two of the travel variables or to a square of one of the travel variables. The offset coefficients (62) are calibrated more frequently than are the linear coefficients (64).
G03F 7/00 - Production par voie photomécanique, p. ex. photolithographique, de surfaces texturées, p. ex. surfaces impriméesMatériaux à cet effet, p. ex. comportant des photoréservesAppareillages spécialement adaptés à cet effet
Disclosed are systems and methods for producing extreme ultraviolet (EUV) radiation from a target material in a source vessel in which gas flows carry stray target material vapor and in which measures are adopted to reduce the amount of stray target material that is able to escape the source vessel and reach downstream modules and components.
H05G 2/00 - Appareils ou procédés spécialement adaptés à la production de rayons X, n'utilisant pas de tubes à rayons X, p. ex. utilisant la génération d'un plasma
69.
METHOD FOR IMAGING-METRIC-MAPPING AWARE SOURCE-MASK OPTIMIZATION
A non-transitory computer-readable medium stores a set of instructions for performing operations including determining values of an imaging metric that is indicative of image quality of an aerial image that is based on a simulation of a lithography process. The aerial image is associated with a wafer plane of the lithography process. Each of the determined values is associated with a coordinate position of the aerial image. The operations also include generating an imaging metric map by mapping the values of the imaging metric to corresponding positions of the pupil profile via illumination wavefront simulation. The operations also include determining at least one region of the imaging metric map that meets a prescribed criterion. The operations also include selecting the at least one determined region, thereby defining a pupil profile constraint according to the prescribed criterion for the imaging metric.
G03F 7/00 - Production par voie photomécanique, p. ex. photolithographique, de surfaces texturées, p. ex. surfaces impriméesMatériaux à cet effet, p. ex. comportant des photoréservesAppareillages spécialement adaptés à cet effet
70.
COMPUTATIONAL LITHOGRAPHY SIMULATION USING A RESIST MODEL WITH A CURVATURE TERM
A non-transitory computer-readable medium stores a set of instructions that is executable by at least one processor of an apparatus to cause the apparatus to perform operations for modeling resist exposure used in a lithography process. The operations include obtaining a representation of an aerial image associated with a wafer plane of the lithography process. The representation of the aerial image includes a space domain represented by a pixel grid, image intensity information for the pixel grid, and a continuous function for interpolating off-pixel image intensity. The operations also include processing the representation of the aerial image using a resist model that is configured to evaluate curvature of image intensity associated with the aerial image. The processing includes determining curvature values based on a gradient of the continuous function. The operations also include generating a resist image based on the determined curvature values from the gradient of the continuous function.
Disclosed herein is a motion system comprising a base and a mover configured to move relative to the base. One of the base and the mover comprises magnets and the other of the base and the mover comprises coils and magnetic material such that a driving force for moving the mover relative to the base comprises a Lorentz force between the magnets and the coils and a magnetic force between the magnets and the magnetic material. The motion system is arranged such that a ratio of a magnetic flux associated with the magnets that passes through the coils to a magnetic flux associated with the magnets that passes through the magnetic material is greater than 2:3.
H02K 7/18 - Association structurelle de génératrices électriques à des moteurs mécaniques d'entraînement, p. ex. à des turbines
G03F 7/00 - Production par voie photomécanique, p. ex. photolithographique, de surfaces texturées, p. ex. surfaces impriméesMatériaux à cet effet, p. ex. comportant des photoréservesAppareillages spécialement adaptés à cet effet
H02K 41/03 - Moteurs synchronesMoteurs pas à pasMoteurs à réluctance
H02K 37/10 - Moteurs à rotor tournant pas à pas et sans rupteur ou commutateur actionné par le rotor, p. ex. moteurs pas à pas du type à aimant permanent
72.
SUBSTRATE HOLDER, LITHOGRAPHIC APPARATUS, COMPUTER PROGRAM AND METHOD
A substrate holding system for supporting a substrate, the substrate holding system including a substrate holder and an evacuation conduit, wherein the substrate holder includes: a main body having a surface; a plurality of burls projecting from the surface and having distal ends that form a support surface for a substrate; and an evacuation passage in fluid communication with the evacuation conduit and a space between the surface and a substrate supported by the burls to form an evacuation flow path; and a proportional valve in the evacuation flow path.
G03F 7/00 - Production par voie photomécanique, p. ex. photolithographique, de surfaces texturées, p. ex. surfaces impriméesMatériaux à cet effet, p. ex. comportant des photoréservesAppareillages spécialement adaptés à cet effet
G03F 9/00 - Mise en registre ou positionnement d'originaux, de masques, de trames, de feuilles photographiques, de surfaces texturées, p. ex. automatique
There is provided a reticle or a reticle blank comprising a low deformation material, wherein the reticle or reticle blank material has a Zero Crossing Temperature (ZCT) profile, and a ZCT slope profile, wherein at least one of the ZCT profile and the ZCT slope profile is non-uniform. Also provided is a method of mitigating non-correctable deformations in a reticle or reticle blank, the method including providing a reticle or reticle blank having at least one of a Zero Crossing Temperature (ZCT) profile and a ZCT slope profile which is non-uniform across the reticle or reticle blank.
G03F 1/22 - Masques ou masques vierges d'imagerie par rayonnement d'une longueur d'onde de 100 nm ou moins, p. ex. masques pour rayons X, masques en extrême ultra violet [EUV]Leur préparation
G03F 7/00 - Production par voie photomécanique, p. ex. photolithographique, de surfaces texturées, p. ex. surfaces impriméesMatériaux à cet effet, p. ex. comportant des photoréservesAppareillages spécialement adaptés à cet effet
G06F 30/20 - Optimisation, vérification ou simulation de l’objet conçu
74.
METHOD FOR LABELING TIME SERIES DATA RELATING TO ONE OR MORE MACHINES
Disclosed is a method for labeling time series data relating to one or more machines. The method comprises obtaining said time series data; segmenting said time series data to obtain a plurality of patterns grouped according to pattern similarity; labeling a subset of said plurality of patterns to obtain a labeled subset of patterns, the remaining patterns of the plurality of patterns comprising unlabeled 5 patterns; defining a graph structure over said patterns, said graph structure describing similarity between the patterns; and classifying and/or labeling the unlabeled patterns to obtain labeled patterns using the graph structure and the labeled subset of patterns.
Disclosed is a phase generated carrier interrogator comprising: one or more interferometers, each interferometer operable to receive modulated radiation and to generate a respective interferometer signal comprising a phase of interest induced by a measurand, each said interferometer signal also comprising a periodic phase modulation induced by said modulated radiation, wherein the periodic phase modulation comprises an amplitude described by a respective modulation index for each interferometer; at least one detector operable to detect each interferometer signal; and a signal processing module. The signal processing module is operable to: estimate the modulation index respectively for each interferometer, obtain a respective estimated modulation index for each interferometer; demodulate each interferometer signal using its respective estimated modulation index to estimate a respective phase of interest from each interferometer signal thereby obtaining a respective estimated phase of interest value for each interferometer.
G01B 9/02004 - Interféromètres caractérisés par la commande ou la génération des propriétés intrinsèques du rayonnement utilisant plusieurs fréquences utilisant le balayage des fréquences
A pellicle membrane includes thermally emissive crystals supported by a matrix, wherein the average thickness of the pellicle membrane is greater than the average grain size of the emissive crystals. Also, there is described a pellicle assembly including such a pellicle membrane, and a lithographic apparatus including such a pellicle membrane or pellicle assembly. Also described is a method of manufacturing a pellicle membrane including emissive crystals in a matrix, the method including controlling at least one selected from: the chemical composition of the emissive crystals, morphology of the emissive crystals, and/or annealing conditions to provide a pellicle membrane having a thickness greater than the average grain size of the emissive crystals.
G03F 1/62 - Pellicules, p. ex. assemblage de pellicules ayant une membrane sur un cadre de supportLeur préparation
G03F 7/00 - Production par voie photomécanique, p. ex. photolithographique, de surfaces texturées, p. ex. surfaces impriméesMatériaux à cet effet, p. ex. comportant des photoréservesAppareillages spécialement adaptés à cet effet
77.
IN-SITU MONITORING OF LASER MODULES AND TEMPERATURE-BASED LIFETIME PREDICTION
A system for in-situ monitoring of optical element health in a laser apparatus comprises direct measurement of optical element temperature and recording a history of variations of the optical element temperature during successive periods of irradiation and non-irradiation. The direct measurement may be achieved by a thermocouple inserted into the laser system and pace di contact with the optical element. The history of temperature variations may be used to calculate as trajectory of the change in optical absorption coefficient, which may be used to predict the remaining lifetime of the optical element and schedule service event.
H01S 3/00 - Lasers, c.-à-d. dispositifs utilisant l'émission stimulée de rayonnement électromagnétique dans la gamme de l’infrarouge, du visible ou de l’ultraviolet
H01S 3/23 - Agencement de plusieurs lasers non prévu dans les groupes , p. ex. agencement en série de deux milieux actifs séparés
G03F 7/00 - Production par voie photomécanique, p. ex. photolithographique, de surfaces texturées, p. ex. surfaces impriméesMatériaux à cet effet, p. ex. comportant des photoréservesAppareillages spécialement adaptés à cet effet
H01S 3/22 - Lasers, c.-à-d. dispositifs utilisant l'émission stimulée de rayonnement électromagnétique dans la gamme de l’infrarouge, du visible ou de l’ultraviolet caractérisés par le matériau utilisé comme milieu actif à gaz
A system includes: an excimer laser configured to generate light having a first wavelength, the excimer laser including at least one optical element interacting with the generated light; a sensor device configured to detect light emanating from the optical element, the detected light having one or more wavelengths that are distinct from the first wavelength; and an assessment module in communication with the sensor device. The assessment module is configured to: analyze the detected light; and generate an estimate of damage to the optical element based on the analysis.
G03F 7/00 - Production par voie photomécanique, p. ex. photolithographique, de surfaces texturées, p. ex. surfaces impriméesMatériaux à cet effet, p. ex. comportant des photoréservesAppareillages spécialement adaptés à cet effet
There is provided an object holder configured to support an object used in an exposure apparatus for a semiconductor manufacturing process, comprising a plurality of support elements defining a support surface and comprising at least two layers; wherein a first layer is a substoichiometric chromium based layer or a metal-Si multilayer or metal-Ge multilayer, configured to provide a selectively changeable height of individual support elements via thermal treatment of the first layer; wherein a second layer is more compressively stressed than the first layer, and located closer to a free end of the support element, wherein a layer thickness of said first layer of at least some of the support elements has been reduced via thermal laser treatment. Also described is an optical element for an exposure apparatus, an exposure apparatus, and a method of correcting the flatness of a surface of an object holder or optical element.
G03F 7/00 - Production par voie photomécanique, p. ex. photolithographique, de surfaces texturées, p. ex. surfaces impriméesMatériaux à cet effet, p. ex. comportant des photoréservesAppareillages spécialement adaptés à cet effet
A non-transitory computer-readable medium stores a set of instructions that is executable by at least one processor of an apparatus to cause the apparatus to perform operations for optimizing an illumination source and mask used in a lithography process. The operations include obtaining a pupil profile. The operations also include simulating the lithography process using the pupil profile to generate predictions resulting from the lithography process. The operations also include calculating a cost function based on the predictions. The cost function includes a linear fading effect term that is indicative of a linear fading effect on the predictions. The operations also include adjusting the pupil profile based on the linear fading effect term.
G03F 1/70 - Adaptation du tracé ou de la conception de base du masque aux exigences du procédé lithographique, p. ex. correction par deuxième itération d'un motif de masque pour l'imagerie
81.
COMPUTATIONAL LITHOGRAPHY SIMULATION USING A MULTI-CHANNEL PHYSICS-INFORMED NEURAL NETWORK FOR A 3D MASK
A non-transitory computer-readable medium stores a set of instructions that is executable by at least one processor of an apparatus to cause the apparatus to perform operations for simulating a lithography process. The operations include obtaining a physics-informed neural network (PINN) comprising multiple channel. A first channel of the multiple channels is associated with a first set of physical characteristics of an interaction between an electromagnetic (EM) field and a thick mask used in the lithography process. A second channel of the multiple channels is associated with a second set of physical characteristics of the interaction that is different from the first set of physical characteristics. The operations also include executing the PINN using the first channel to generate a near-field image representation of the EM field for the thick mask with the second channel disabled.
G03F 1/22 - Masques ou masques vierges d'imagerie par rayonnement d'une longueur d'onde de 100 nm ou moins, p. ex. masques pour rayons X, masques en extrême ultra violet [EUV]Leur préparation
G06F 30/27 - Optimisation, vérification ou simulation de l’objet conçu utilisant l’apprentissage automatique, p. ex. l’intelligence artificielle, les réseaux neuronaux, les machines à support de vecteur [MSV] ou l’apprentissage d’un modèle
A charged-particle inspection apparatus includes a charged-particle beam source, a lens assembly that influences a charged particle beam, and a current source circuit that produces a driving signal applied to the lens. The current source circuit includes a voltage controlled current source (VCCS), a DC feedback component, an AC feedback component, and a summing component. The VCCS controls a driving signal to the lens assembly based on correction signals from each of the DC feedback component and the AC feedback component. Together, the correction signals compensate for both noise and drift in the driving signal.
G05F 1/46 - Régulation de la tension ou de l'intensité là où la variable effectivement régulée par le dispositif de réglage final est du type continu
G05F 1/56 - Régulation de la tension ou de l'intensité là où la variable effectivement régulée par le dispositif de réglage final est du type continu utilisant des dispositifs à semi-conducteurs en série avec la charge comme dispositifs de réglage final
G05F 1/575 - Régulation de la tension ou de l'intensité là où la variable effectivement régulée par le dispositif de réglage final est du type continu utilisant des dispositifs à semi-conducteurs en série avec la charge comme dispositifs de réglage final caractérisé par le circuit de rétroaction
G01N 21/00 - Recherche ou analyse des matériaux par l'utilisation de moyens optiques, c.-à-d. en utilisant des ondes submillimétriques, de la lumière infrarouge, visible ou ultraviolette
A photoelectric plate (300) for use in place of a patterning device in a lithographic apparatus, the photoelectric plate comprising: a base layer (301); and a coating (302) provided on the base layer; wherein the coating is configured to convert impinging photons of EUV radiation into free electrons at a higher conversion efficiency than the base layer.
G03F 7/00 - Production par voie photomécanique, p. ex. photolithographique, de surfaces texturées, p. ex. surfaces impriméesMatériaux à cet effet, p. ex. comportant des photoréservesAppareillages spécialement adaptés à cet effet
B08B 7/00 - Nettoyage par des procédés non prévus dans une seule autre sous-classe ou un seul groupe de la présente sous-classe
84.
DETERMINING A FOCUS POSITION FOR IMAGING A SUBSTRATE WITH AN INTEGRATED PHOTONIC SENSOR
A metrology system(s) and method(s) described herein can eliminate the need for a separate focus branch often used in prior metrology systems to determine a focus position for imaging a substrate. An integrated photonic sensor is used to determine the focus position. The integrated photonic sensor is based on apodized grating couplers wherein, by changing a grating period and/or duty cycle, the amplitude and the phase of the grating coupler mode is engineered to have an optimum coupling efficiency for a specific defocus (or initial/known focus position). A coupling efficiency is determined between an emitting grating and a receiving grating based on emitted radiation with a certain amplitude and phase configured for a known position relative to a substrate, and reflected radiation received from the substrate. A focus position is determined based on the coupling efficiency and the known position.
G03F 7/00 - Production par voie photomécanique, p. ex. photolithographique, de surfaces texturées, p. ex. surfaces impriméesMatériaux à cet effet, p. ex. comportant des photoréservesAppareillages spécialement adaptés à cet effet
85.
DETERMINING A FOCUS POSITION BASED ON A FIELD IMAGE POSITION SHIFT
The metrology system(s) and method(s) described herein eliminate the need for a separate focus branch (e.g., comprising an illumination source, several lenses, and many other optical components) often used in prior metrology systems to determine a focus position for imaging a substrate. Instead of using a separate focus branch, the present system(s) and method(s) use the position of a field image taken of the substrate in the ordinary course of a metrology measurement using existing sensing components to determine the focus position. A shift of the field image position from an expected field image position is determined, and the focus position for imaging the substrate is determined based on the shift.
G03F 7/00 - Production par voie photomécanique, p. ex. photolithographique, de surfaces texturées, p. ex. surfaces impriméesMatériaux à cet effet, p. ex. comportant des photoréservesAppareillages spécialement adaptés à cet effet
A dark field digital holographic microscope and associated metrology method is disclosed which is configured to determine a characteristic of interest of a structure. The dark field digital holographic microscope includes an illumination branch for providing illumination radiation to illuminate the structure; a detection arrangement for capturing object radiation resulting from diffraction of the illumination radiation by the structure; and a reference branch for providing reference radiation for interfering with the object radiation to obtain an image of an interference pattern formed by the illumination radiation and reference radiation. The reference branch has an optical element operable to vary a characteristic of the reference radiation so as to reduce and/or minimize variation in a contrast metric of the image within a field of view of the dark field digital holographic microscope at a detector plane.
G03H 1/04 - Procédés ou appareils pour produire des hologrammes
G03H 1/00 - Procédés ou appareils holographiques utilisant la lumière, les infrarouges ou les ultraviolets pour obtenir des hologrammes ou pour en obtenir une imageLeurs détails spécifiques
G03H 1/26 - Procédés ou appareils adaptés spécialement pour produire des hologrammes multiples ou pour en obtenir des images, p. ex. procédés pour l'holographie à plusieurs couleurs
87.
METHOD FOR REDUCING THE EFFECTS OF PARASITIC FORCES AND/OR MOMENTS ON THE IMAGING QUALITY OF A PROJECTION-EXPOSURE APPARATUS, AND PROJECTION-EXPOSURE APPARATUS WITH A MODULE
A projection-exposure apparatus (1, 101) with at least one module (40, 50) including a fluid channel (41, 51) which at least at times contains a pressurized fluid (42, 52). The fluid channel is connected to supply lines (47.1, 47.2, 57.1, 57.2) which are connected by bearing points (48.1, 48.2, 58.1, 58.2) to a supporting frame (66). The module is symmetrically formed. A related method for reducing the effect on the imaging quality of a projection-exposure apparatus that is brought about by parasitic forces (Fres) and/or moments (Mres) caused by pressure fluctuations induced by flow and/or transferred via a fluid (42, 52) and acting on a module of the projection-exposure apparatus includes determining the parasitic forces (Fres) and/or moments (Mres), defining at least two at least partially compensating forces (Fuw) and/or moments (MVTxz, MATxz), and creating the module for producing the compensating forces and/or moments.
G03F 7/00 - Production par voie photomécanique, p. ex. photolithographique, de surfaces texturées, p. ex. surfaces impriméesMatériaux à cet effet, p. ex. comportant des photoréservesAppareillages spécialement adaptés à cet effet
G02B 26/08 - Dispositifs ou dispositions optiques pour la commande de la lumière utilisant des éléments optiques mobiles ou déformables pour commander la direction de la lumière
88.
PROCESS AND SYSTEM FOR MAINTENANCE OF A LIGHT SOURCE
A system and a maintenance process of a light source includes (a) collecting a first set of parameters of a first apparatus of the light source; (b) analyzing the first set of parameters to calculate a first score of a likelihood of a failure mode of the first apparatus; and (c) in response to the first score exceeding a first pre-determined value, (1) generating one or more first action plans for maintenance and/or replacement of the first apparatus, (2) providing a notification of the one or more first action plans, and (3) storing the first set of parameters, the first score, and the one or more first action plans in a storage medium.
G03F 7/00 - Production par voie photomécanique, p. ex. photolithographique, de surfaces texturées, p. ex. surfaces impriméesMatériaux à cet effet, p. ex. comportant des photoréservesAppareillages spécialement adaptés à cet effet
H01S 3/00 - Lasers, c.-à-d. dispositifs utilisant l'émission stimulée de rayonnement électromagnétique dans la gamme de l’infrarouge, du visible ou de l’ultraviolet
89.
GAS QUALITY MAINTENANCE IN A LASER DISCHARGE CHAMBER
A method of maintaining the quality of the gas in a discharge chamber for use in a deep ultraviolet radiation source. In operations in which injections of fresh gas are added intermittently, a first performance evaluation is carried out after a gas refill and then another performance evaluation is carried out after an expected gas lifetime to determine one or both of a periodicity and size of a next fresh gas injection. In operations in which gas is intermittently refreshed while the deep ultraviolet radiation source is idle, evaluations are carried out after a refill to determine one or more of a need for a refill, a size of the refill, and the periodicity of the refill.
H01S 3/10 - Commande de l'intensité, de la fréquence, de la phase, de la polarisation ou de la direction du rayonnement, p. ex. commutation, ouverture de porte, modulation ou démodulation
H01S 3/23 - Agencement de plusieurs lasers non prévu dans les groupes , p. ex. agencement en série de deux milieux actifs séparés
H01S 3/134 - Stabilisation de paramètres de sortie de laser, p. ex. fréquence ou amplitude par commande du milieu actif, p. ex. par commande des procédés ou des appareils pour l'excitation dans des lasers à gaz
H01S 3/038 - Électrodes, p. ex. forme, configuration ou composition particulières
H01S 3/225 - Lasers, c.-à-d. dispositifs utilisant l'émission stimulée de rayonnement électromagnétique dans la gamme de l’infrarouge, du visible ou de l’ultraviolet caractérisés par le matériau utilisé comme milieu actif à gaz le gaz actif étant polyatomique, c.-à-d. contenant plusieurs atomes comprenant un excimer ou un exciplex
H01S 3/036 - Moyens pour obtenir ou maintenir la pression désirée du gaz à l'intérieur du tube, p. ex. au moyen d'un getter ou d'une réactivationMoyens pour faire circuler le gaz, p. ex. pour uniformiser la pression à l'intérieur du tube
90.
DUV LASER SYSTEM BEAM DIVERGENCE CONTROL APPARATUS AND PROCESS
A deep ultraviolet laser system includes a pulse stretcher including multiple steerable mirrors; a sensor positioned to measure a divergence of beams passed through the pulse stretcher; and a controller connected to the sensor and to the mirrors, the controller configured to (1) using the sensor, measure and record an initial divergence of a beam passed through the pulse stretcher (2) separately dither each steerable mirror and measure and record corresponding divergences (3) calculate, based on the corresponding divergences, new angular positions for each steerable mirror to produce a divergence at, within, or closer to a target or target range, and (4) position each respective steerable mirror of the pulse stretcher at its new angular position and, (5) measure and record a new divergence. A process of controlling divergence is also disclosed.
H01S 3/00 - Lasers, c.-à-d. dispositifs utilisant l'émission stimulée de rayonnement électromagnétique dans la gamme de l’infrarouge, du visible ou de l’ultraviolet
H01S 3/10 - Commande de l'intensité, de la fréquence, de la phase, de la polarisation ou de la direction du rayonnement, p. ex. commutation, ouverture de porte, modulation ou démodulation
H01S 3/225 - Lasers, c.-à-d. dispositifs utilisant l'émission stimulée de rayonnement électromagnétique dans la gamme de l’infrarouge, du visible ou de l’ultraviolet caractérisés par le matériau utilisé comme milieu actif à gaz le gaz actif étant polyatomique, c.-à-d. contenant plusieurs atomes comprenant un excimer ou un exciplex
H01S 3/23 - Agencement de plusieurs lasers non prévu dans les groupes , p. ex. agencement en série de deux milieux actifs séparés
91.
SYSTEM AND METHOD FOR COMPENSATING PLASMA PRESSURE ON TIN DROPLETS USING A NONLINEAR MODEL
An illumination source includes a droplet generator, a laser, a detector, and a controller. The droplet generator produces a stream of droplets of target material directed to an interaction region. The laser irradiates the droplets at the interaction region using a beam of pulses. The irradiated droplets generate output illumination of the illumination source. The detector measures an aspect of an interaction between a pulse from the beam and a droplet from the stream. Controller includes circuitry and determines a pulse timing adjustment that is nonlinearly dependent on the measured aspect. The controller also controls a subsequent laser pulse of the beam based on the pulse timing adjustment.
H05G 2/00 - Appareils ou procédés spécialement adaptés à la production de rayons X, n'utilisant pas de tubes à rayons X, p. ex. utilisant la génération d'un plasma
Disclosed is an apparatus for and method of controlling the conversion efficiency of an extreme ultraviolet (EUV) radiation source by timing irradiation laser pulses such that they strike droplets of the target material while the droplet of target material has a specified shape and/or orientation with respect to the pulses.
H05G 2/00 - Appareils ou procédés spécialement adaptés à la production de rayons X, n'utilisant pas de tubes à rayons X, p. ex. utilisant la génération d'un plasma
93.
SYSTEMS AND METHODS FOR TARGET MATERIAL WASTE MANAGEMENT IN EUV LIGHT SOURCES
Systems and methods for managing target material waste in EUV light sources are disclosed. An apparatus associated with a radiation source may include a reservoir connected with a target material catch of the radiation source through a conduit, a valve associated with the reservoir and configured to be movable within a volume of the reservoir, and a first container placed on a horizontal surface of the valve at a first location, wherein in an extended position, the valve is configured to separate the volume of the reservoir in a first space and a second space, and wherein in the extended position, the first container is configured to be aligned with the conduit to collect target material.
H05G 2/00 - Appareils ou procédés spécialement adaptés à la production de rayons X, n'utilisant pas de tubes à rayons X, p. ex. utilisant la génération d'un plasma
94.
MEASUREMENT CHARGE REMOVAL AND PER-LAYER STACK GEOMETRY INFERENCE USING DIFFUSION MODELS
A method of updating images taken by charged-particle beam (CPB) tool of a feature of a wafer. The method includes generating a distortion map by a machine learning model trained on: a first CPB image of the feature, wherein the first image has a first resolution; a second CPB image of the feature, wherein the second image has a second resolution different from the first resolution and the second CPB image includes distortions; and a mask based on the first CPB image. The distortion map indicates how the second CPB image is distorted relative to the feature. A third image of the feature is generated by applying the distortion map to the second CPB image, wherein the third image has a third resolution higher than the first resolution and is used for performing metrology or defect detection.
An apparatus for identifying defects on a wafer under inspection includes a memory storing a set of instructions and at least one processor configured to execute the set of instructions to cause the apparatus to perform: operations including: acquiring a set of labeled images, wherein the set of labeled images includes: a first set of images generated by a generative model trained on input images, a conditioning mask, and conditioning parameters, wherein the conditioning mask and the conditioning parameters are associated with a defect; the input images; and the conditioning mask; and training a segmentation model, using the set of labeled images, to predict the defect in a second set of images.
A metrology system comprises: a substrate support; a sensor support; a plurality of position sensors; and a processor. The plurality of position sensors are supported by the sensor support and each one is operable to: project a radiation beam onto a substrate; receive a portion of the radiation beam scattered from a target on the substrate; and generate a measurement signal that is indicative of a position of the target relative to that position sensor. The processor is configured to: receive the measurement signal from each of the plurality of position sensors; and to combine the measurement signals from at least two different of the plurality of position sensors to at least partially correct at least one of the measurement signals for a position error so as to determine a corrected position of the target relative to the substrate support.
G03F 7/00 - Production par voie photomécanique, p. ex. photolithographique, de surfaces texturées, p. ex. surfaces impriméesMatériaux à cet effet, p. ex. comportant des photoréservesAppareillages spécialement adaptés à cet effet
A method for correcting scan data generated by scanning a sample with charged particles and detecting signal charged particles emitted from the sample, the method including selecting at least one scan profile for scanning the sample; and correcting scan data generated by the scanning of the sample, based on at least one known distortion function f(x,y) associated with the at least one selected scan profile.
A photonic integrated circuit includes an optical input configured to receive pump radiation, and a plurality of nonlinear elements connected to the optical input. The plurality of nonlinear elements are configured to generate broadband radiation upon receiving the pump radiation. At least two of the plurality of nonlinear elements differ in at least a material and/or a dimension.
A light source includes a chamber, a first electrode assembly, and a second electrode. The first electrode assembly includes a first electrode, a rod, and a tip portion. The rod extends longitudinally through a portion of the first electrode. The tip portion is coupled to the rod and includes a first discharge surface. The second electrode has a second discharge surface spaced apart from the first discharge surface by a discharge gap. The rod adjusts a position of the tip portion to maintain the discharge gap. The first and second electrodes excite a gas discharge medium of the chamber to generate a light beam. Advantageously, the system maintains the discharge gap over time, maintains flow between the discharge gap, adjusts a position of the first discharge surface based on one or more parameters of the light source, reduces errors in the light beam, and increases lifetime of the light source.
H01S 3/036 - Moyens pour obtenir ou maintenir la pression désirée du gaz à l'intérieur du tube, p. ex. au moyen d'un getter ou d'une réactivationMoyens pour faire circuler le gaz, p. ex. pour uniformiser la pression à l'intérieur du tube
H01S 3/038 - Électrodes, p. ex. forme, configuration ou composition particulières
H01S 3/097 - Procédés ou appareils pour l'excitation, p. ex. pompage par décharge dans le gaz d'un laser à gaz
H01S 3/0971 - Procédés ou appareils pour l'excitation, p. ex. pompage par décharge dans le gaz d'un laser à gaz excité transversalement
H01S 3/134 - Stabilisation de paramètres de sortie de laser, p. ex. fréquence ou amplitude par commande du milieu actif, p. ex. par commande des procédés ou des appareils pour l'excitation dans des lasers à gaz
H01S 3/225 - Lasers, c.-à-d. dispositifs utilisant l'émission stimulée de rayonnement électromagnétique dans la gamme de l’infrarouge, du visible ou de l’ultraviolet caractérisés par le matériau utilisé comme milieu actif à gaz le gaz actif étant polyatomique, c.-à-d. contenant plusieurs atomes comprenant un excimer ou un exciplex
A die supplier comprising: a donor support configured to support and rotate a donor substrate that supports a plurality of dies; a transfer arm configured to transfer dies from the donor substrate by rotation around a first axis; and an additional transfer arm configured to transfer dies from the donor substrate by rotation around a second axis, different from the first axis, wherein the transfer arm and additional transfer arm are configured to transfer dies to substantially the same location away from the donor substrate.
