Abrégé

Systems and methods of integrated manufacturing a plurality of multilayer capacitor elements are disclosed. The integrated system includes an unwinding unit configured to dispense a source roll of metallized film coated with a dielectric coating; a patterning unit configured to pattern a conductor of the metallized film coated with the dielectric coating, wherein patterning comprises forming electrode geometries margin locations, defect-isolation regions, alternating electrode layers, or a combination of any two or more thereof for capacitor formation; a slitting mechanism comprising a plurality of adjustable blades configured to slit the metallized film with the dielectric coating into a plurality of narrow strips of patterned metallized film with the dielectric coating; and a rewinding unit configured to wind an individual narrow strip, forming the plurality of multilayer capacitor elements with aligned margins, defect-isolation regions, alternating electrode layers, or a combination of any two or more thereof.

Classes IPC  ?

• H01G 13/00 - Appareils spécialement adaptés à la fabrication de condensateursProcédés spécialement adaptés à la fabrication de condensateurs non prévus dans les groupes
• H01G 13/02 - Machines à enrouler des condensateurs
• H01G 4/232 - Bornes pour la connexion électrique d'au moins deux couches d'un condensateur à empilement ou à enroulement
• H01G 4/30 - Condensateurs à empilement
• H01G 4/32 - Condensateurs enroulés
• H01G 4/33 - Condensateurs à film mince ou à film épais
• H01G 4/38 - Condensateurs multiples, c.-à-d. combinaisons structurales de condensateurs fixes
• H01G 4/012 - Forme des électrodes non autoporteuses

Abrégé

An article includes a crystalline semiconductor substrate, a structured dielectric region disposed on the crystalline semiconductor substrate, the structured dielectric region including a plurality of pillars extending from the crystalline semiconductor substrate, and a filler material including a porous dielectric material, a nonporous dielectric material, vacuum, a gas, or a combination of two or more thereof disposed in regions separating the plurality of pillars; an insulating oxide layer disposed on the structured dielectric region; and a device layer comprising a crystalline semiconductor or piezoelectric material; where: each of the plurality of pillars has a width of about 100 nm to about 40 μm; the plurality of pillars are formed of the crystalline semiconductor substrate; and the structured dielectric region exhibits an effective resistivity higher than a resistivity of the crystalline semiconductor substrate, or the filler material exhibits an effective permittivity lower than a permittivity of the crystalline semiconductor substrate.

Classes IPC  ?

• H01L 21/02 - Fabrication ou traitement des dispositifs à semi-conducteurs ou de leurs parties constitutives
• H01L 21/762 - Régions diélectriques
• H10N 30/073 - Formation de parties ou de corps piézo-électriques ou électrostrictifs sur un élément électrique ou sur un autre support par laminage ou collage de corps piézo-électriques ou électrostrictifs par fusion de métaux ou par adhésifs

Abrégé

A dielectric structure including solid dielectric regions incorporating a plurality of regions of vacuum or gas is provided. The dielectric constant of the regions of solid dielectrics can have a dielectric constant greater than 4. Each of the plurality of regions of vacuum or gas or the regions of solid dielectrics may be anisotropic with an aspect ratio of at least four. The smallest average dimension of a plurality of regions of vacuum or gas and/or solid dielectrics can have a length of less than 1 micron. The dielectric structure may have a higher electrical energy density in the regions of vacuum or gas than in the solid matrix. One or more electrodes of the capacitive structure can be coated with a solid insulating layer without an interface between a region of vacuum or gas and electrode.

Classes IPC  ?

• H01G 4/20 - Diélectriques utilisant des combinaisons de diélectriques d'au moins deux des groupes
• H01G 4/10 - Diélectriques à base d'oxydes métalliques
• H01G 4/02 - Diélectriques gazeux ou sous forme de vapeur
• H01B 3/16 - Isolateurs ou corps isolants caractérisés par le matériau isolantEmploi de matériaux spécifiés pour leurs propriétés isolantes ou diélectriques composés principalement de substances inorganiques gaz