A method for polishing a silicon carbide surface. The silicon carbide surface is polished with a particulate abrasive while exposed to a composition of water, an oxidizing agent and an electrophile.
A Chemical Mechanical Planarization (CMP) system, apparatus, and method comprising providing a source of CMP slurry; modifying the source of CMP slurry to form a modified CMP slurry by directing a source of at least one of mechanical or electromagnetic wave energy at the source of CMP slurry; applying a flow of the modified CMP slurry to a wafer polishing apparatus at which a substrate is positioned; and performing a polishing operation on the substrate.
A Chemical Mechanical Planarization (CMP) system, apparatus, and method comprising providing a source of CMP slurry; modifying the source of CMP slurry to form a modified CMP slurry by directing a source of at least one of mechanical or electromagnetic wave energy at the source of CMP slurry; applying a flow of the modified CMP slurry to a wafer polishing apparatus at which a substrate is positioned; and performing a polishing operation on the substrate.
H01L 21/306 - Traitement chimique ou électrique, p. ex. gravure électrolytique
B24B 57/02 - Dispositifs pour l'alimentation, l'application, le triage ou la récupération de produits de meulage, polissage ou rodage pour l'alimentation en produits de meulage, polissage ou rodage à l'état fluide, vaporisés, pulvérisés ou liquéfiés
4.
Silicon carbide (SIC) wafer polishing with slurry formulation and process
A method for polishing a silicon carbide surface. The silicon carbide surface is polished with a particulate abrasive while exposed to a composition of water, an oxidizing agent and an electrophile.
A Chemical Mechanical Planarization (CMP) system, apparatus, and method comprising providing a source of CMP slurry; modifying the source of CMP slurry to form a modified CMP slurry by directing a source of at least one of mechanical or electromagnetic wave energy at the source of CMP slurry; applying a flow of the modified CMP slurry to a wafer polishing apparatus at which a substrate is positioned; and performing a polishing operation on the substrate.
A method for polishing a silicon carbide surface. The silicon carbide surface is polished with a particulate abrasive while exposed to a composition of water, an oxidizing agent and an electrophile. The method provides material removal rates (MRR) that are competitive with, or superior to, conventional methods without utilizing harsh chemicals.
A Chemical Mechanical Planarization (CMP) system, apparatus, and method comprising providing a source of CMP slurry; modifying the source of CMP slurry to form a modified CMP slurry by directing a source of at least one of mechanical or electromagnetic wave energy at the source of CMP slurry; applying a flow of the modified CMP slurry to a wafer polishing apparatus at which a substrate is positioned; and performing a polishing operation on the substrate.
H01L 21/304 - Traitement mécanique, p. ex. meulage, polissage, coupe
H01L 21/00 - Procédés ou appareils spécialement adaptés à la fabrication ou au traitement de dispositifs à semi-conducteurs ou de dispositifs à l'état solide, ou bien de leurs parties constitutives
H01L 21/02 - Fabrication ou traitement des dispositifs à semi-conducteurs ou de leurs parties constitutives
H01L 21/04 - Fabrication ou traitement des dispositifs à semi-conducteurs ou de leurs parties constitutives les dispositifs ayant des barrières de potentiel, p. ex. une jonction PN, une région d'appauvrissement ou une région de concentration de porteurs de charges
A brush for cleaning a substrate, and a machine with a brush for cleaning a substrate, are described. Liquid is injected into an inlet end of the brush. The liquid flows through the brush and exits the brush, onto the substrate, along the longitudinal length of the brush. The brush uses physical and chemical means to create a flow rate of liquid exiting the brush that is approximately constant, or uniform, versus distance from the inlet end of the brush. The methods used to produce the approximately uniform liquid flow rate versus distance from the inlet end include varying the size, shape, and positioning of holes in a brush mandrel, varying the size, shape and positioning of pores or holes in a brush porous sleeve, and varying the irradiation characteristics and chemical response to irradiation of the porous sponge sleeve.
B08B 1/04 - Nettoyage par des procédés impliquant l'utilisation d'outils, de brosses ou d'éléments analogues utilisant des éléments actifs rotatifs
H01L 21/67 - Appareils spécialement adaptés pour la manipulation des dispositifs à semi-conducteurs ou des dispositifs électriques à l'état solide pendant leur fabrication ou leur traitementAppareils spécialement adaptés pour la manipulation des plaquettes pendant la fabrication ou le traitement des dispositifs à semi-conducteurs ou des dispositifs électriques à l'état solide ou de leurs composants
09 - Appareils et instruments scientifiques et électriques
Produits et services
Chemical-mechanical polishing (cmp) tools containing a light
source and an acoustic wave source for semiconductor
manufacturing. Semiconductor polishing activation equipment for use with a
chemical-mechanical polisher (CMP) tool, namely, an acoustic
wave source and/or a light source.
42 - Services scientifiques, technologiques et industriels, recherche et conception
Produits et services
Semiconductor substrate polishing machine and components parts, namely, a wafer polisher and tribometer, a wafer scrubber and tribometer, and a slurry injection system comprised of a molded injector body that delivers slurry onto the wafer, and molded mounting hardware to mount the injector body to the wafer polisher, for a wafer polisher sold together as a unit Testing the functionality of semiconductor processing equipment, namely, analytical and functional testing of polishing pads, diamond discs, cleaning solutions, additives, and retaining rings
Semiconductor polishing activation equipment for use with a chemical-mechanical polisher (CMP) tool, namely, a light source and an acoustic wave source sold as an integral component of chemical mechanical polishing (CMP) machines; semiconductor polishing activation equipment for use with a chemical-mechanical polisher (CMP) tool, namely, a slurry injector machine that features an acoustic wave source, a light source, or an acoustic wave and a light source that bombards the slurry prior to leaving the injector to modify the slurry for improved cleaning of a wafer
In a certain embodiment, the invention comprises an apparatus for injecting slurry between the wafer and the pad in chemical mechanical polishing of semiconductor wafers comprising an injector the leading edge of which possess bays, depressions or notches that capture spent slurry and hold it long enough for it to transfer heat from the polishing reaction to the pad or through the injector to the new slurry before the said spent slurry is thrown from the polishing pad. The effect is to considerably improve the removal rate, reduce slurry consumption and reduce operating time.
B24B 57/04 - Dispositifs pour l'alimentation, l'application, le triage ou la récupération de produits de meulage, polissage ou rodage pour l'alimentation en produits de meulage, polissage ou rodage solides
B24B 57/02 - Dispositifs pour l'alimentation, l'application, le triage ou la récupération de produits de meulage, polissage ou rodage pour l'alimentation en produits de meulage, polissage ou rodage à l'état fluide, vaporisés, pulvérisés ou liquéfiés
B24B 37/10 - Machines ou dispositifs de rodageAccessoires conçus pour travailler les surfaces planes caractérisés par le déplacement de la pièce ou de l'outil de rodage pour un rodage simple face
B24B 37/04 - Machines ou dispositifs de rodageAccessoires conçus pour travailler les surfaces planes
13.
FLUID FILLED TEMPLATE FOR USE IN CHEMICAL MECHANICAL PLANARIZATION
A method of chemical mechanical planarization (CMP) wherein a wafer-holding template is placed on a polishing head of a CMP polishing tool wherein template contains a central fixed volume chamber into which fluid has been placed.
Disclosed is an apparatus for injecting slurry onto the polishing pad surface of a chemical mechanical polishing (CMP) tool. The disclosed apparatus includes a rectilinear shaped injector bottom, where multiple slots are created in the top surface of the injector bottom, allowing the injector bottom to flex and to conform to the polishing pad profile. CMP slurry or components thereof are introduced through one or more top surface openings, travel through the injector body, and exit through a slit or bottom surface opening. The slurry is spread into a thin film by the injector, and is introduced at the gap between the surface of the polishing pad and the wafer, along the leading edge of the wafer, in quantities small enough that all or most of the slurry is introduced between the wafer and the polishing pad.
B24B 1/00 - Procédés de meulage ou de polissageUtilisation d'équipements auxiliaires en relation avec ces procédés
B24B 37/04 - Machines ou dispositifs de rodageAccessoires conçus pour travailler les surfaces planes
B24B 57/02 - Dispositifs pour l'alimentation, l'application, le triage ou la récupération de produits de meulage, polissage ou rodage pour l'alimentation en produits de meulage, polissage ou rodage à l'état fluide, vaporisés, pulvérisés ou liquéfiés
In a certain embodiment, the invention comprises an apparatus for injecting slurry between the wafer and the pad in chemical mechanical polishing of semiconductor wafers comprising an injector the leading edge of which possess bays, depressions or notches that capture spent slurry and hold it long enough for it to transfer heat from the polishing reaction to the pad or through the injector to the new slurry before the said spent slurry is thrown from the polishing pad. The effect is to considerably improve the removal rate, reduce slurry consumption and reduce operating time.
H01L 21/304 - Traitement mécanique, p. ex. meulage, polissage, coupe
B24B 57/02 - Dispositifs pour l'alimentation, l'application, le triage ou la récupération de produits de meulage, polissage ou rodage pour l'alimentation en produits de meulage, polissage ou rodage à l'état fluide, vaporisés, pulvérisés ou liquéfiés
A retaining ring for the polishing head in chemical mechanical polishing that in an embodiment distributes heat evenly by a heat exchanger means embedded within or on the lower surface of the ring that reduces the discrepancy in the temperature about different points of the lower surface of the ring in contact with or facing the polishing pad during chemical mechanical polishing.
The present invention relates to an apparatus for cleaning the grooves of a CMP polishing pad during CMP operation comprising a series of projections at intervals corresponding to the width between grooves, said projections being the width and depth of the grooves or less joined on a structure that swerves as a support and spacer for the projections, said structure in turn attached to the frame of the CMP polisher by appropriate structural support means and a method for using the same. The present relates more specifically to an apparatus for cleaning the grooves of a CMP polishing pad during CMP operation comprising a series of projections at intervals corresponding to the width between grooves, said projections being the width and depth of the grooves or less joined on a structure that swerves as a support and spacer for the projections, said structure in turn attached to the front of a slurry injector so that it serves the purpose both of clearing old slurry from the grooves before the new slurry is injected and providing a guide to maintain the injector on a true course in regard to the grooves and lands on the CMP polishing pad between grooves and a method for using the same.
A method of CMP wherein the polishing pad is partially or wholly replaced by a counter face made of a smooth hard material, and beads or particles of a hard material are suspended in the polishing slurry to provide asperities for the polishing process.
The present invention comprises an apparatus for injecting slurry between the wafer and the pad in chemical mechanical polishing of semiconductor wafers comprising a solid crescent shaped injector the concave trailing edge of which is fitted to the size and shape of the leading edge of the polishing head with a gap of up to 1 inch, the bottom surface of which faces the pad and rests on it with a light load, and through which CMP slurry or components thereof are introduced through one or more openings in the top of the injector and travel through a channel or reservoir the length of the device to the bottom where it or they exit multiple openings in the bottom of the injector, are spread into a thin film, and are introduced between the surface of the polishing pad and the wafer along the leading edge of the wafer in quantities such that all or most of the slurry is introduced between the wafer and the polishing pad and a method of use therefor.
A family of slurries are disclosed which are useful in modifying exposed surfaces of wafers for semiconductor fabrication along with methods of modifying exposed surfaces of wafers for semiconductor fabrication utilizing such a family of working slurries, and semiconductor wafers.
