A method for polishing a silicon carbide surface. The silicon carbide surface is polished with a particulate abrasive while exposed to a composition of water, an oxidizing agent and an electrophile.
A Chemical Mechanical Planarization (CMP) system, apparatus, and method comprising providing a source of CMP slurry; modifying the source of CMP slurry to form a modified CMP slurry by directing a source of at least one of mechanical or electromagnetic wave energy at the source of CMP slurry; applying a flow of the modified CMP slurry to a wafer polishing apparatus at which a substrate is positioned; and performing a polishing operation on the substrate.
A Chemical Mechanical Planarization (CMP) system, apparatus, and method comprising providing a source of CMP slurry; modifying the source of CMP slurry to form a modified CMP slurry by directing a source of at least one of mechanical or electromagnetic wave energy at the source of CMP slurry; applying a flow of the modified CMP slurry to a wafer polishing apparatus at which a substrate is positioned; and performing a polishing operation on the substrate.
H01L 21/306 - Chemical or electrical treatment, e.g. electrolytic etching
B24B 57/02 - Devices for feeding, applying, grading or recovering grinding, polishing or lapping agents for feeding of fluid, sprayed, pulverised, or liquefied grinding, polishing or lapping agents
4.
Silicon carbide (SIC) wafer polishing with slurry formulation and process
A method for polishing a silicon carbide surface. The silicon carbide surface is polished with a particulate abrasive while exposed to a composition of water, an oxidizing agent and an electrophile.
A Chemical Mechanical Planarization (CMP) system, apparatus, and method comprising providing a source of CMP slurry; modifying the source of CMP slurry to form a modified CMP slurry by directing a source of at least one of mechanical or electromagnetic wave energy at the source of CMP slurry; applying a flow of the modified CMP slurry to a wafer polishing apparatus at which a substrate is positioned; and performing a polishing operation on the substrate.
A method for polishing a silicon carbide surface. The silicon carbide surface is polished with a particulate abrasive while exposed to a composition of water, an oxidizing agent and an electrophile. The method provides material removal rates (MRR) that are competitive with, or superior to, conventional methods without utilizing harsh chemicals.
A Chemical Mechanical Planarization (CMP) system, apparatus, and method comprising providing a source of CMP slurry; modifying the source of CMP slurry to form a modified CMP slurry by directing a source of at least one of mechanical or electromagnetic wave energy at the source of CMP slurry; applying a flow of the modified CMP slurry to a wafer polishing apparatus at which a substrate is positioned; and performing a polishing operation on the substrate.
H01L 21/304 - Mechanical treatment, e.g. grinding, polishing, cutting
H01L 21/00 - Processes or apparatus specially adapted for the manufacture or treatment of semiconductor or solid-state devices, or of parts thereof
H01L 21/02 - Manufacture or treatment of semiconductor devices or of parts thereof
H01L 21/04 - Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
A brush for cleaning a substrate, and a machine with a brush for cleaning a substrate, are described. Liquid is injected into an inlet end of the brush. The liquid flows through the brush and exits the brush, onto the substrate, along the longitudinal length of the brush. The brush uses physical and chemical means to create a flow rate of liquid exiting the brush that is approximately constant, or uniform, versus distance from the inlet end of the brush. The methods used to produce the approximately uniform liquid flow rate versus distance from the inlet end include varying the size, shape, and positioning of holes in a brush mandrel, varying the size, shape and positioning of pores or holes in a brush porous sleeve, and varying the irradiation characteristics and chemical response to irradiation of the porous sponge sleeve.
B08B 1/04 - Cleaning by methods involving the use of tools, brushes, or analogous members using rotary operative members
H01L 21/67 - Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereofApparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components
09 - Scientific and electric apparatus and instruments
Goods & Services
Chemical-mechanical polishing (cmp) tools containing a light
source and an acoustic wave source for semiconductor
manufacturing. Semiconductor polishing activation equipment for use with a
chemical-mechanical polisher (CMP) tool, namely, an acoustic
wave source and/or a light source.
42 - Scientific, technological and industrial services, research and design
Goods & Services
Semiconductor substrate polishing machine and components parts, namely, a wafer polisher and tribometer, a wafer scrubber and tribometer, and a slurry injection system comprised of a molded injector body that delivers slurry onto the wafer, and molded mounting hardware to mount the injector body to the wafer polisher, for a wafer polisher sold together as a unit Testing the functionality of semiconductor processing equipment, namely, analytical and functional testing of polishing pads, diamond discs, cleaning solutions, additives, and retaining rings
Semiconductor polishing activation equipment for use with a chemical-mechanical polisher (CMP) tool, namely, a light source and an acoustic wave source sold as an integral component of chemical mechanical polishing (CMP) machines; semiconductor polishing activation equipment for use with a chemical-mechanical polisher (CMP) tool, namely, a slurry injector machine that features an acoustic wave source, a light source, or an acoustic wave and a light source that bombards the slurry prior to leaving the injector to modify the slurry for improved cleaning of a wafer
In a certain embodiment, the invention comprises an apparatus for injecting slurry between the wafer and the pad in chemical mechanical polishing of semiconductor wafers comprising an injector the leading edge of which possess bays, depressions or notches that capture spent slurry and hold it long enough for it to transfer heat from the polishing reaction to the pad or through the injector to the new slurry before the said spent slurry is thrown from the polishing pad. The effect is to considerably improve the removal rate, reduce slurry consumption and reduce operating time.
B24B 57/04 - Devices for feeding, applying, grading or recovering grinding, polishing or lapping agents for feeding of solid grinding, polishing or lapping agents
B24B 57/02 - Devices for feeding, applying, grading or recovering grinding, polishing or lapping agents for feeding of fluid, sprayed, pulverised, or liquefied grinding, polishing or lapping agents
B24B 37/10 - Lapping machines or devicesAccessories designed for working plane surfaces characterised by the movement of the work or lapping tool for single side lapping
B24B 37/04 - Lapping machines or devicesAccessories designed for working plane surfaces
13.
FLUID FILLED TEMPLATE FOR USE IN CHEMICAL MECHANICAL PLANARIZATION
A method of chemical mechanical planarization (CMP) wherein a wafer-holding template is placed on a polishing head of a CMP polishing tool wherein template contains a central fixed volume chamber into which fluid has been placed.
Disclosed is an apparatus for injecting slurry onto the polishing pad surface of a chemical mechanical polishing (CMP) tool. The disclosed apparatus includes a rectilinear shaped injector bottom, where multiple slots are created in the top surface of the injector bottom, allowing the injector bottom to flex and to conform to the polishing pad profile. CMP slurry or components thereof are introduced through one or more top surface openings, travel through the injector body, and exit through a slit or bottom surface opening. The slurry is spread into a thin film by the injector, and is introduced at the gap between the surface of the polishing pad and the wafer, along the leading edge of the wafer, in quantities small enough that all or most of the slurry is introduced between the wafer and the polishing pad.
B24B 1/00 - Processes of grinding or polishingUse of auxiliary equipment in connection with such processes
B24B 37/04 - Lapping machines or devicesAccessories designed for working plane surfaces
B24B 57/02 - Devices for feeding, applying, grading or recovering grinding, polishing or lapping agents for feeding of fluid, sprayed, pulverised, or liquefied grinding, polishing or lapping agents
In a certain embodiment, the invention comprises an apparatus for injecting slurry between the wafer and the pad in chemical mechanical polishing of semiconductor wafers comprising an injector the leading edge of which possess bays, depressions or notches that capture spent slurry and hold it long enough for it to transfer heat from the polishing reaction to the pad or through the injector to the new slurry before the said spent slurry is thrown from the polishing pad. The effect is to considerably improve the removal rate, reduce slurry consumption and reduce operating time.
H01L 21/304 - Mechanical treatment, e.g. grinding, polishing, cutting
B24B 57/02 - Devices for feeding, applying, grading or recovering grinding, polishing or lapping agents for feeding of fluid, sprayed, pulverised, or liquefied grinding, polishing or lapping agents
A retaining ring for the polishing head in chemical mechanical polishing that in an embodiment distributes heat evenly by a heat exchanger means embedded within or on the lower surface of the ring that reduces the discrepancy in the temperature about different points of the lower surface of the ring in contact with or facing the polishing pad during chemical mechanical polishing.
The present invention relates to an apparatus for cleaning the grooves of a CMP polishing pad during CMP operation comprising a series of projections at intervals corresponding to the width between grooves, said projections being the width and depth of the grooves or less joined on a structure that swerves as a support and spacer for the projections, said structure in turn attached to the frame of the CMP polisher by appropriate structural support means and a method for using the same. The present relates more specifically to an apparatus for cleaning the grooves of a CMP polishing pad during CMP operation comprising a series of projections at intervals corresponding to the width between grooves, said projections being the width and depth of the grooves or less joined on a structure that swerves as a support and spacer for the projections, said structure in turn attached to the front of a slurry injector so that it serves the purpose both of clearing old slurry from the grooves before the new slurry is injected and providing a guide to maintain the injector on a true course in regard to the grooves and lands on the CMP polishing pad between grooves and a method for using the same.
A method of CMP wherein the polishing pad is partially or wholly replaced by a counter face made of a smooth hard material, and beads or particles of a hard material are suspended in the polishing slurry to provide asperities for the polishing process.
The present invention comprises an apparatus for injecting slurry between the wafer and the pad in chemical mechanical polishing of semiconductor wafers comprising a solid crescent shaped injector the concave trailing edge of which is fitted to the size and shape of the leading edge of the polishing head with a gap of up to 1 inch, the bottom surface of which faces the pad and rests on it with a light load, and through which CMP slurry or components thereof are introduced through one or more openings in the top of the injector and travel through a channel or reservoir the length of the device to the bottom where it or they exit multiple openings in the bottom of the injector, are spread into a thin film, and are introduced between the surface of the polishing pad and the wafer along the leading edge of the wafer in quantities such that all or most of the slurry is introduced between the wafer and the polishing pad and a method of use therefor.
A family of slurries are disclosed which are useful in modifying exposed surfaces of wafers for semiconductor fabrication along with methods of modifying exposed surfaces of wafers for semiconductor fabrication utilizing such a family of working slurries, and semiconductor wafers.
