Methods and arrangement for clamping substrates to a support using adhesive material area disclosed. The method comprises providing a support comprising a first surface defining a plane; applying adhesive material on at least portions of the first surface; and placing the substrate onto the adhesive material, wherein the adhesive material forms a plurality of support locations supporting the substrate. Preferably the adhesive material is cured at least partly during the application of a substantially uniformly distributed force to the substrate in the direction of the support. The arrangements comprise a support comprising a first surface, for supporting the substrate via adhesive material, whereby the first surface defines a plane. Preferably it also comprises an arrangement for providing electromagnetic radiation, thermal energy, and/or a chemical substance to the adhesive material, and an arrangement for providing a substantially uniformly distributed force to the substrate in the direction of the support.
Charged particle beamlet lithography system for transferring a pattern to a surface of a target comprising a sensor for determining one or more characteristics of one or more charged particle beamlets. The sensor comprises a converter element for receiving charged particles and generating photons in response. The converter element comprises a surface for receiving one or more charged particle beamlets, the surface being provided with one or more cells for evaluating one or more individual beamlets. Each cell comprises a predetermined blocking pattern of one or more charged particle blocking structures forming multiple knife edges at transitions between blocking and non-blocking regions along a predetermined beamlet scan trajectory over the converter element surface. The converter element surface is covered with a coating layer substantially permeable for said charged particles and substantially impermeable for ambient light. An electrically conductive layer is located between the coating layer and the blocking structures.
G21K 5/10 - Dispositifs d'irradiation pourvus de dispositions permettant un mouvement relatif entre la source du rayonnement et l'objet à irradier
B82Y 10/00 - Nanotechnologie pour le traitement, le stockage ou la transmission d’informations, p. ex. calcul quantique ou logique à un électron
B82Y 40/00 - Fabrication ou traitement des nanostructures
H01J 37/244 - DétecteursComposants ou circuits associés
H01J 37/317 - Tubes à faisceau électronique ou ionique destinés aux traitements localisés d'objets pour modifier les propriétés des objets ou pour leur appliquer des revêtements en couche mince, p. ex. implantation d'ions
H01J 37/304 - Commande des tubes par une information en provenance des objets, p. ex. signaux de correction
A method for making a semiconductor memory device comprising a plurality of memory cells for storing one or more data values, the method comprising: exposing a pattern on a wafer for creating structures for a plurality of memory cells for the semiconductor memory device, wherein the pattern is exposed by means of one or more charged particle beams; and varying an exposure dose of the one or more charged particle beams during exposure of the pattern to generate a set of one or more non-common features in one or more structures of at least one of the memory cells, so that the structures of the at least one memory cell differ from the corresponding structures of other memory cells of the semiconductor memory device.
G11C 11/412 - Mémoires numériques caractérisées par l'utilisation d'éléments d'emmagasinage électriques ou magnétiques particuliersÉléments d'emmagasinage correspondants utilisant des éléments électriques utilisant des dispositifs à semi-conducteurs utilisant des transistors formant des cellules avec réaction positive, c.-à-d. des cellules ne nécessitant pas de rafraîchissement ou de régénération de la charge, p. ex. multivibrateur bistable, déclencheur de Schmitt utilisant uniquement des transistors à effet de champ
G11C 17/12 - Mémoires mortes programmables une seule foisMémoires semi-permanentes, p. ex. cartes d'information pouvant être replacées à la main utilisant des dispositifs à semi-conducteurs, p. ex. des éléments bipolaires dans lesquelles le contenu est déterminé lors de la fabrication par une disposition prédéterminée des éléments de couplage, p. ex. mémoires ROM programmables par masque utilisant des dispositifs à effet de champ
H01L 21/027 - Fabrication de masques sur des corps semi-conducteurs pour traitement photolithographique ultérieur, non prévue dans le groupe ou
H01L 21/8246 - Structures de mémoires mortes (ROM)
H01L 27/11 - Structures de mémoires statiques à accès aléatoire
The invention relates to an exposure apparatus and a method for projecting a charged particle beam onto a target. The exposure apparatus comprises a charged particle optical arrangement comprising a charged particle source for generating a charged particle beam and a charged particle blocking element and/or a current limiting element for blocking at least a part of a charged particle beam from a charged particle source. The charged particle blocking element and the current limiting element comprise a substantially flat substrate provided with an absorbing layer comprising Boron, Carbon or Beryllium. The substrate further preferably comprises one or more apertures for transmitting charged particles. The absorbing layer is arranged spaced apart from the at least one aperture.
The invention relates to a charged particle source module for generating and emitting a charged particle beam, such as an electron beam, comprising: a frame including a first frame part, a second frame part, and one or more rigid support members which are arranged between said first frame part and said second frame part; a charged particle source arrangement for generating a charged particle beam, such as an electron beam, wherein said charged particle source arrangement, such as an electron source, is arranged at said second frame part; and a power connecting assembly arranged at said first frame part, wherein said charged particle source arrangement is electrically connected to said connecting assembly via electrical wiring.
Feedthrough device (50; 150), for forming a hermetic seal around signal conductors in a signal conductor group (60; 160) with a group width. The device comprises a slotted member (52; 152) and a base (62; 162). The base defines a through hole (65) that extends entirely through the base along a feedthrough direction (X), and is adapted to accommodate the slotted member. The slotted member defines first and second surfaces (53, 54; 153, 154) on opposite sides associated with the feedthrough direction, and a side surface (55, 56; 155, 156) facing transverse to the feedthrough direction. The slotted member comprises a slot (58; 158), which extends along the feedthrough direction through the slotted member, and opens into the first and second surfaces and into a longitudinal opening (59; 159) along the side surface. The slot extends transversely into the slotted member up to a slot depth at least equal to the signal conductor group width.
The invention relates to a substrate exposure system comprising a frame, a substrate support module for carrying a substrate, an exposure apparatus for exposing said substrate, and adjustment assembly for adjusting the position of the exposure apparatus with respect to the substrate support module. The adjustment assembly comprises a hydraulic actuator, a hydraulic generator and a conduit, wherein the conduit interconnects said hydraulic actuator and said hydraulic generator for forming a hydraulic system. The exposure apparatus, the frame, the adjustment assembly and the substrate support module are arranged as parts of a series of mechanically linked components. A first part of said series of mechanically linked components comprises the exposure apparatus, and a second part comprises the substrate support module. Said hydraulic actuator is arranged between said first part and said second part. Preferably the hydraulic actuator comprises a first bellows and the hydraulic generator comprises a second bellows.
H01J 37/20 - Moyens de support ou de mise en position de l'objet ou du matériauMoyens de réglage de diaphragmes ou de lentilles associées au support
H01J 37/317 - Tubes à faisceau électronique ou ionique destinés aux traitements localisés d'objets pour modifier les propriétés des objets ou pour leur appliquer des revêtements en couche mince, p. ex. implantation d'ions
An electronic device comprising a semiconductor chip which comprises a plurality of structures formed in the semiconductor chip, wherein the semiconductor chip is a member of a set of semiconductor chips, the set of semiconductor chips comprises a plurality of subsets of semiconductor chips, and the semiconductor chip is a member of only one of the subsets. The plurality of structures of the semiconductor chip includes a set of common structures which is the same for all of the semiconductor chips of the set, and a set of non-common structures, wherein the non-common structures of the semiconductor chip of the subset is different from a non-common circuit of the semiconductor chips in every other subset. At least a first portion of the non-common structures and a first portion of the common structures form a first non-common circuit, wherein the first non-common circuit of the semiconductor chips of each subset is different from a non-common circuit of the semiconductor chips in every other subset. At least a second portion of the non-common structures is adapted to store or generate a first predetermined value which uniquely identifies the first non-common circuit, wherein the first predetermined value is readable from outside the semiconductor chip by automated reading means.
Method of manufacturing electronic devices using a maskless lithographic exposure system using a maskless pattern writer. The method comprises generating beamlet control data for controlling the maskless pattern writer to expose a wafer for creation of the electronic devices, wherein the beamlet control data is generated based on a feature data set defining features selectable for individualizing the electronic devices, wherein exposure of the wafer according to the beamlet control data results in exposing a pattern having a different selection of the features from the feature data set for different subsets of the electronic devices.
H01L 21/82 - Fabrication ou traitement de dispositifs consistant en une pluralité de composants à l'état solide ou de circuits intégrés formés dans ou sur un substrat commun avec une division ultérieure du substrat en plusieurs dispositifs individuels pour produire des dispositifs, p.ex. des circuits intégrés, consistant chacun en une pluralité de composants
10.
METHOD AND APPARATUS FOR ALIGNING SUBSTRATES ON A SUBSTRATE SUPPORT UNIT
The invention relates to an alignment apparatus for aligning a substrate, and a substrate processing system comprising such alignment apparatus. The alignment apparatus comprises an alignment base for supporting said substrate and/or a substrate support member, and a force generating device for applying a contact force on said substrate. The force generating device comprises: - an arm comprising a rigid proximal end a rigid distal end provided with a contact section for contacting an edge of said substrate, and an elastically deformable arm section extending between the rigid proximal and distal ends, - a connection part connecting said rigid proximal end to said alignment base, said arm being movable with respect to said alignment base via said connection part, and - an actuator for acting on and causing a displacement of said rigid proximal end, whereby said contact force, defined by said elastically deformable arm section, is applied to said substrate by said contact section.
H01L 21/68 - Appareils spécialement adaptés pour la manipulation des dispositifs à semi-conducteurs ou des dispositifs électriques à l'état solide pendant leur fabrication ou leur traitementAppareils spécialement adaptés pour la manipulation des plaquettes pendant la fabrication ou le traitement des dispositifs à semi-conducteurs ou des dispositifs électriques à l'état solide ou de leurs composants pour le positionnement, l'orientation ou l'alignement
B23Q 3/18 - Dispositifs permettant de maintenir, supporter ou positionner les pièces ou les outils, ces dispositifs pouvant normalement être démontés de la machine pour positionner uniquement
11.
METHOD AND SYSTEM FOR FABRICATING UNIQUE CHIPS USING A CHARGED PARTICLE MULTI-BEAMLET LITHOGRAPHY SYSTEM
A method of creating electronic devices such as semiconductor chips using a maskless lithographic exposure system such as a charged particle multi-beamlet lithography system (301A-301D). The maskless lithographic exposure system comprises a lithography subsystem (316) including a maskless pattern writer such as a charged particle multi-beamlet lithography machine (1) or ebeam machine. The method comprises introducing unique chip design data (430) or information related thereto into pattern data comprising common chip design data before streaming the pattern data to the maskless pattern writer.
Method of manufacturing electronic devices using a maskless lithographic exposure system using a maskless pattern writer, wherein beamlet control data is generated for controlling the maskless pattern writer to expose a wafer for creation of the electronic devices. The beamlet control data is generated based on design layout data defining a plurality of structures, such as vias, for the electronic devices to be manufactured from the wafer, and selection data defining which of the structures of the design layout data are applicable for each electronic device to be manufactured from the wafer, the selection data defining a different set of the structures for different subsets of the electronic devices. Exposure of the wafer according to the beamlet control data results in exposing a pattern having a different set of the structures for different subsets of the electronic devices.
H01L 21/82 - Fabrication ou traitement de dispositifs consistant en une pluralité de composants à l'état solide ou de circuits intégrés formés dans ou sur un substrat commun avec une division ultérieure du substrat en plusieurs dispositifs individuels pour produire des dispositifs, p.ex. des circuits intégrés, consistant chacun en une pluralité de composants
An electronic device comprises a semiconductor chip (100) which comprises a plurality of structures. The chip (100) is a member of a set of chips. The set of chips comprises a plurality of subsets of chips. The chip is a member of only one of the subsets. The structures of the chip include a set of common structures (101) which is the same for all of the chips of the set, and a set of non-common structures (102). The non-common structures (102) of the subset are different from the non-common structures (102) in every other subset. A first portion of the non-common structures (102) is adapted to store or generate a first predetermined value. The first predetermined value is readable from outside of the semiconductor chip (100) by automated reading means. The first portion of the non-common structures (102) is functionally independent from the common structures (101).
The invention relates to a substrate holding device comprising a holding plate, a base plate, an array of supports, and an array of droplets of a heat absorbing material. The holding plate comprises a first side for holding a substrate. The base plate is arranged at distance from the holding plate and provides a gap between the base plate and the holding plate at a side of the holding plate opposite to the first side. The array of supports is arranged in between the holding plate and the base plate. The array of liquid and/or solid droplets is arranged in between the holding plate and the base plate, and the droplets are arranged to contact both the base plate and the holding plate. The droplets are arranged spaced apart from each other and from the supports, and are arranged adjacent to each other in a direction along the gap.
H01L 21/683 - Appareils spécialement adaptés pour la manipulation des dispositifs à semi-conducteurs ou des dispositifs électriques à l'état solide pendant leur fabrication ou leur traitementAppareils spécialement adaptés pour la manipulation des plaquettes pendant la fabrication ou le traitement des dispositifs à semi-conducteurs ou des dispositifs électriques à l'état solide ou de leurs composants pour le maintien ou la préhension
The present invention relates to a method and encoding device for encoding a sequence of m-bit pattern words and outputting as a bit-stream a frame comprising corresponding n-bit symbols as well as a predetermined comma symbol, wherein m < n, wherein occurrences of false commas in the output bitstream are avoided. The output bitstream may further be optimized based on CID count and DC balance
H04L 25/49 - Circuits d'émissionCircuits de réception à conversion de code au transmetteurCircuits d'émissionCircuits de réception à pré-distorsionCircuits d'émissionCircuits de réception à insertion d'intervalles morts pour obtenir un spectre de fréquence désiréCircuits d'émissionCircuits de réception à au moins trois niveaux d'amplitude
H03M 7/14 - Conversion en, ou à partir de codes non pondérés
H04L 7/04 - Commande de vitesse ou de phase au moyen de signaux de synchronisation
16.
METHOD AND DEVICE FOR GENERATING A DECODED AND SYNCHRONIZED OUTPUT
The invention relates to a method and decoding device for receiving an input bit-stream comprising a sequence of n-bit pattern symbols as well as a unique n-bit comma symbol for synchronization, and for generating therefrom a synchronized output comprising a sequence of m-bit pattern words, with m < n. The comma symbol allows detection of bit-skip in the input bit-stream, so that the output to be synchronized to compensate for the bit-skip. The decoding device and method of decoding are particularly simple and may be applied in devices, e.g. in a beam modulator array comprising a plurality of decoding devices, and/or in a lithography system comprising such a beam modulator array, in which space and computational resources are scarce while still providing a synchronization capability.
H04L 25/49 - Circuits d'émissionCircuits de réception à conversion de code au transmetteurCircuits d'émissionCircuits de réception à pré-distorsionCircuits d'émissionCircuits de réception à insertion d'intervalles morts pour obtenir un spectre de fréquence désiréCircuits d'émissionCircuits de réception à au moins trois niveaux d'amplitude
H03M 7/14 - Conversion en, ou à partir de codes non pondérés
H04L 7/04 - Commande de vitesse ou de phase au moyen de signaux de synchronisation
17.
METHOD AND SYSTEM FOR THE REMOVAL AND/OR AVOIDANCE OF CONTAMINATION IN CHARGED PARTICLE BEAM SYSTEMS
A charged particle beam system is disclosed, comprising: • a charged particle beam generator for generating a beam (8) of charged particles; • a charged particle optical column (226) arranged in a vacuum chamber, wherein the charged particle optical column is arranged for projecting the beam of charged particles onto a target, and wherein the charged particle optical column comprises a charged particle optical element for influencing the beam of charged particles; • a source (62) for providing a cleaning agent; • a conduit (64) connected to the source and arranged for introducing the cleaning agent towards the charged particle optical element; wherein the charged particle optical element comprises: • a charged particle transmitting aperture (46) for transmitting and/ or influencing the beam of charged particles, and • at least one vent hole (60) for providing a flow path between a first side and a second side of the charged particle optical element. Further, a method for preventing or removing contamination in the charged particle transmitting apertures is disclosed, comprising the step of introducing the cleaning agent while the beam generator is active.
H01J 37/317 - Tubes à faisceau électronique ou ionique destinés aux traitements localisés d'objets pour modifier les propriétés des objets ou pour leur appliquer des revêtements en couche mince, p. ex. implantation d'ions
H01J 37/02 - Tubes à décharge pourvus de moyens permettant l'introduction d'objets ou d'un matériau à exposer à la décharge, p. ex. pour y subir un examen ou un traitement Détails
H01J 37/02 - Tubes à décharge pourvus de moyens permettant l'introduction d'objets ou d'un matériau à exposer à la décharge, p. ex. pour y subir un examen ou un traitement Détails
H01J 37/317 - Tubes à faisceau électronique ou ionique destinés aux traitements localisés d'objets pour modifier les propriétés des objets ou pour leur appliquer des revêtements en couche mince, p. ex. implantation d'ions
B82Y 10/00 - Nanotechnologie pour le traitement, le stockage ou la transmission d’informations, p. ex. calcul quantique ou logique à un électron
B82Y 40/00 - Fabrication ou traitement des nanostructures
19.
CONTROL SYSTEM AND METHOD FOR LITHOGRAPHY APPARATUS
A method for initializing a first operation in a first module (120) at a first start time value in a first time base, the method comprising generating a clock signal (402, 116), generating a second time base (403) in the first module (120) based on the clock signal (116), determining a second sync value (405) in the second time base, determining a first sync value (406) in the first time base corresponding to a second sync value in the second time base, determining a start trigger value (410) in the second time base based on the first sync value and the start time value in the first time base, and initializing the first operation (411) in the first module (120) based on the start trigger value and a current value of the second time base in the first module.
H01J 37/00 - Tubes à décharge pourvus de moyens permettant l'introduction d'objets ou d'un matériau à exposer à la décharge, p. ex. pour y subir un examen ou un traitement
20.
INDIVIDUAL BEAM PATTERN PLACEMENT VERIFICATION IN MULTIPLE BEAM LITHOGRAPHY
Methods and systems for verification of a mark formed on a target surface during a multiple beam lithography process, and for verifying beam position of individual beams on the target surface based on mark verification are disclosed. A mark can be verified by scanning an optical beam over the mark and measuring the reflected optical beam and the position of the target with respect to the optical beam. By comparing the intensity of the reflected light as a function of distance over the mark with reference mark data representing an intended definition of the mark, and any deviations between the measured representation and the reference mark data are determined. If any deviations deviate more than the predetermined limit, incorrectly positioned beams can be verified from the data.
H01J 37/317 - Tubes à faisceau électronique ou ionique destinés aux traitements localisés d'objets pour modifier les propriétés des objets ou pour leur appliquer des revêtements en couche mince, p. ex. implantation d'ions
21.
LOAD LOCK SYSTEM AND METHOD FOR TRANSFERRING SUBSTRATES IN A LITHOGRAPHY SYSTEM
The present invention relates to an apparatus and a method for transferring substrates into and from a vacuum chamber in a lithography apparatus (301). The load lock system comprises: a load lock chamber (310) provided with an opening (311) for allowing passage of a substrate (405) in and out of the load lock chamber, and a transfer apparatus comprising a sub-frame at least partially arranged in the load lock chamber, an arm which is, with a proximal end thereof, connected to the sub-frame, and a substrate receiving unit which is connected to a distal end of the arm. The arm comprises at least three hinging arm parts, wherein a first and a second arm part are hingedly connected to the sub-frame with a proximal end thereof. A third arm part is hingedly connected to the distal ends of the first and second arm parts. The arm parts are arranged to form a four-bar linkage.
H01L 21/67 - Appareils spécialement adaptés pour la manipulation des dispositifs à semi-conducteurs ou des dispositifs électriques à l'état solide pendant leur fabrication ou leur traitementAppareils spécialement adaptés pour la manipulation des plaquettes pendant la fabrication ou le traitement des dispositifs à semi-conducteurs ou des dispositifs électriques à l'état solide ou de leurs composants
B25J 9/04 - Manipulateurs à commande programmée caractérisés par le mouvement des bras, p. ex. du type à coordonnées cartésiennes par rotation d'au moins un bras en excluant le mouvement de la tête elle-même, p. ex. du type à coordonnées cylindriques ou polaires
H01L 21/677 - Appareils spécialement adaptés pour la manipulation des dispositifs à semi-conducteurs ou des dispositifs électriques à l'état solide pendant leur fabrication ou leur traitementAppareils spécialement adaptés pour la manipulation des plaquettes pendant la fabrication ou le traitement des dispositifs à semi-conducteurs ou des dispositifs électriques à l'état solide ou de leurs composants pour le transport, p. ex. entre différents postes de travail
H01L 21/687 - Appareils spécialement adaptés pour la manipulation des dispositifs à semi-conducteurs ou des dispositifs électriques à l'état solide pendant leur fabrication ou leur traitementAppareils spécialement adaptés pour la manipulation des plaquettes pendant la fabrication ou le traitement des dispositifs à semi-conducteurs ou des dispositifs électriques à l'état solide ou de leurs composants pour le maintien ou la préhension en utilisant des moyens mécaniques, p. ex. mandrins, pièces de serrage, pinces
The invention relates to an assembly (1) for enclosing a target processing machine. The assembly comprises an enclosure (2) and a transfer unit (3). The enclosure comprises a base plate (21) for arranging said target processing machine thereon, side wall panels (22), which are fixed to said base plate, and a top wall panel (23) which is fixed to said side wall panels. In addition, the enclosure comprises an access opening (24) in a side wall of the enclosure. The transfer unit comprising one or more transfer elements (31) for moving the transfer unit with respect to the base plate. The transfer unit further comprises a door panel (32) which is arranged for closing the access opening, wherein the door panel is movably mounted to the transfer unit by means of a flexible coupling (33) which allows a movement of the door panel with respect to the transfer unit at least in a direction towards and/or away from the enclosure.
A method for processing exposure data (40) for exposing a pattern on a target (30) using a plurality of charged particle beams (24), the exposure data comprising pattern data (48a;46ab;48b) representing one or more features (60) to be written on the target (30) and exposure dose data (58a;56ab;58b) describing exposure dose of the charged particle beams. The method comprises setting one or more dose values (70a;70b) of the exposure dose data such that a sum (72) of dose values corresponding to a position in an overlap area (36) of the target exceeds a maximum dose value for the non-overlap areas (38) of the target where adjacent sub-areas (34) do not overlap, and dividing the pattern data into a plurality of sub-sections (44), each of the sub-sections comprising pattern data describing a part of the pattern to be written in a corresponding sub-area (34) of the target (30), wherein the pattern data comprises overlap pattern data (46ab) describing a part of the pattern to be written in a corresponding overlap area (36) of the target where adjacent sub-areas (34) overlap, and processing the overlap pattern data (46ab) to reduce a size (62) of one or more features (60) described by the overlap pattern data.
G03F 1/78 - Création des motifs d'un masque par imagerie par un faisceau de particules chargées [CPB charged particle beam], p. ex. création des motifs d'un masque par un faisceau d'électrons
H01J 37/317 - Tubes à faisceau électronique ou ionique destinés aux traitements localisés d'objets pour modifier les propriétés des objets ou pour leur appliquer des revêtements en couche mince, p. ex. implantation d'ions
24.
PROXIMITY EFFECT CORRECTION IN A CHARGED PARTICLE LITHOGRAPHY SYSTEM
The invention relates to a method for performing charged particle beam proximity effect correction, comprising the steps of: receiving a digital layout pattern to be patterned onto a target using one or more charged particle beams; selecting a base proximity function comprising a sum of an alpha and a beta proximity function, wherein said alpha proximity function models a short range proximity effect and said beta proximity function models a long range proximity effect, wherein a constant η is defined as a ratio between the beta proximity function and the alpha proximity function in said sum, with 0 < η <1; determining a modified proximity function which corresponds to said base proximity effect function wherein the alpha proximity function has been replaced by a Dirac delta function, and using an electronic processor, performing a deconvolution of the digital layout pattern with the modified proximity function to produce a corrected layout pattern.
H01J 37/317 - Tubes à faisceau électronique ou ionique destinés aux traitements localisés d'objets pour modifier les propriétés des objets ou pour leur appliquer des revêtements en couche mince, p. ex. implantation d'ions
25.
ELECTRICAL CHARGE REGULATION FOR A SEMICONDUCTOR SUBSTRATE DURING CHARGED PARTICLE BEAM PROCESSING
A method for preparing a semiconductor target (10), the method comprising providing a semiconductor substrate (12) including a main substrate surface (14) which defines a substrate periphery (20) along an outer edge. The semiconductor substrate (12) further has an structure layer (30) arranged on the main substrate surface, and comprising a structure layer periphery (32) that is located inwards with respect to the substrate periphery, so as to leave exposed a peripheral substrate region (22) along the substrate periphery. The method further comprises applying an electrically conductive layer (38) on the structure layer, wherein the electrically conductive layer extends beyond the structure layer periphery to establish electrical contact in a contacting portion (23) of the peripheral substrate region.
The invention relates to a cathode arrangement (20) comprising: a cathode body housing an emission surface (32) for emitting electrons in a longitudinal direction (Z), wherein the emission surface is bounded by an emission perimeter (35); a focusing electrode (40) at least partially enclosing the cathode body in a transversal direction and comprising an electron transmission aperture (44) for focusing the electrons emitted by the emission surface, wherein the aperture is bounded by an aperture perimeter (45), wherein the cathode body is moveably arranged within the focusing electrode over a maximum transversal distance (d1) from an aligned position (R0), and wherein the aperture perimeter transversally extends over the emission surface and beyond the emission perimeter over an overlap distance (d2) that exceeds the maximum transversal distance.
H01J 37/063 - Disposition géométrique des électrodes pour la formation du faisceau
H01J 1/28 - Cathodes du type à réserve, p. ex. cathode du type L
H01J 1/46 - Électrodes de commande, p. ex. grilleÉlectrodes auxiliaires
H01J 37/07 - Élimination des effets nuisibles dus à des effets thermiques ou à des champs électriques ou magnétiques
H01J 37/075 - Canons à électrons utilisant l'émission thermo-ionique de cathodes chauffées par bombardement de particules ou par irradiation, p. ex. par laser
27.
CATHODE ARRANGEMENT, ELECTRON GUN, AND LITHOGRAPHY SYSTEM COMPRISING SUCH ELECTRON GUN
The invention relates to a cathode arrangement (20) comprising: • - a thermionic cathode comprising an emission portion (30) provided with an emission surface for emitting electrons, and a reservoir (38) for holding a material, wherein the material, when heated, releases work function lowering particles that diffuse towards the emission portion and emanate at the emission surface at a first evaporation rate; • - a focusing electrode (40) comprising a focusing surface for focusing the electrons emitted from the emission surface of the cathode; and • - an adjustable heat source (50) configured for keeping the focusing surface at a temperature at which accumulation of work function lowering particles on the focusing surface is prevented.
The invention relates to a charged particle lithography system for transferring a pattern onto a target, said system comprising: a target positioning device comprising a target holder having a first side for holding the target, a charged particle optical unit for generating a charged particle beam, modulating said charged particle beam, and directing said charged particle beam towards the first side of the target holder, and a sensor assembly comprising a converter element for converting charged particles which impinge on said converter element into light, wherein the converter element is arranged on said target positioning device, a light sensor for detecting the light, wherein the light sensor is arranged at a distance from said target positioning device, and a light optical lens which is arranged between the converter element and the light sensor for directing light originating from said converter element to said sensor.
H01J 37/317 - Tubes à faisceau électronique ou ionique destinés aux traitements localisés d'objets pour modifier les propriétés des objets ou pour leur appliquer des revêtements en couche mince, p. ex. implantation d'ions
H01J 37/244 - DétecteursComposants ou circuits associés
29.
INTERCONNECT STRUCTURE, MODULATION DEVICE AND LITHOGRAPHY SYSTEM COMPRISING SUCH DEVICE
An interconnect structure (400) arranged on a substrate (401) for electrically transmitting signals. The interconnect structure comprises a plurality of conductive supports (403) extending from a surface of the substrate, and a plurality of conductive lines (42) supported by the conductive supports. At least a portion of each conductive line extending between two of the conductive supports is supported only by the conductive supports at each end of the conductive line portion.
H01L 21/768 - Fixation d'interconnexions servant à conduire le courant entre des composants distincts à l'intérieur du dispositif
H01J 37/04 - Dispositions des électrodes et organes associés en vue de produire ou de commander la décharge, p. ex. dispositif électronoptique, dispositif ionoptique
H01J 37/317 - Tubes à faisceau électronique ou ionique destinés aux traitements localisés d'objets pour modifier les propriétés des objets ou pour leur appliquer des revêtements en couche mince, p. ex. implantation d'ions
30.
MODULATION DEVICE AND LITHOGRAPHY SYSTEM COMPRISING SUCH DEVICE
A modulation device (106) for use in a charged particle multi-beamlet lithography system (100) adapted to generate a plurality of charged particle beamlets (123). The modulation device comprises a substrate (401) comprising a plurality of apertures (35) formed therein, each aperture forming a path for passage of one of the plurality of charged particle beamlets (123) through the substrate, and at least two electrodes (32, 34) located on opposing sides of each aperture (35) for generating a field across the aperture (35). The electrodes (32, 34) each comprise one or more planar conductive layers (32a-d, 34a-d) and a first conductive support (36) mechanically coupled between a first one of the planar conductive layers (32a, 34a) and the substrate (401) for supporting the first planar conductive layer. At least the first planar conductive layer (32a, 34a) and the first conductive support (36) of the electrodes (32, 34) are directly surrounded by air or ambient gas or vacuum, and the conductive supports (36) comprise a via or a contact in direct contact with the substrate (401).
H01J 37/04 - Dispositions des électrodes et organes associés en vue de produire ou de commander la décharge, p. ex. dispositif électronoptique, dispositif ionoptique
H01J 37/317 - Tubes à faisceau électronique ou ionique destinés aux traitements localisés d'objets pour modifier les propriétés des objets ou pour leur appliquer des revêtements en couche mince, p. ex. implantation d'ions
H01L 21/768 - Fixation d'interconnexions servant à conduire le courant entre des composants distincts à l'intérieur du dispositif
The invention relates to a collimator electrode, comprising an electrode body (81) that is provided with a central electrode aperture (82), wherein the electrode body defines an electrode height between two opposite main surfaces, and wherein the electrode body accommodates a cooling conduit (105) inside the electrode body for transferring a cooling liquid (102). The electrode body preferably has a disk shape or an oblate ring shape. The invention further relates to a collimator electrode stack for use in a charged particle beam generator, comprising a first collimator electrode and a second collimator electrode that are each provided with a cooling conduit (105) for transferring the cooling liquid (102), and a connecting conduit (110) for a liquid connection between the cooling conduits of the first and second collimator electrodes.
H01J 37/317 - Tubes à faisceau électronique ou ionique destinés aux traitements localisés d'objets pour modifier les propriétés des objets ou pour leur appliquer des revêtements en couche mince, p. ex. implantation d'ions
H01J 37/065 - Montage des canons ou de leurs éléments constitutifs
The invention relates to a collimator electrode stack (70), comprising: - at least three collimator electrodes (71-80) for collimating a charged particle beam along an optical axis (A), wherein each collimator electrode comprises an electrode body with an electrode aperture for allowing passage to the charged particle beam, wherein the electrode bodies are spaced along an axial direction (Z) which is substantially parallel with the optical axis, and wherein the electrode apertures are coaxially aligned along the optical axis; and - a plurality of spacing structures (89) provided between each pair of adjacent collimator electrodes and made of an electrically insulating material, for positioning the collimator electrodes at predetermined distances along the axial direction. Each of the collimator electrodes (71-80) is electrically connected to a separate voltage output (151-160). The invention further relates to a method of operating a charged particle beam generator.
H01J 37/317 - Tubes à faisceau électronique ou ionique destinés aux traitements localisés d'objets pour modifier les propriétés des objets ou pour leur appliquer des revêtements en couche mince, p. ex. implantation d'ions
H01J 37/065 - Montage des canons ou de leurs éléments constitutifs
The invention relates to an electrode stack (70) comprising stacked electrodes (71-80) for manipulating a charged particle beam along an optical axis (A). Each electrode comprises an electrode body with an aperture for the charged particle beam. The electrode bodies are mutually spaced and the electrode apertures are coaxially aligned along the optical axis. The electrode stack comprises electrically insulating spacing structures (89) between each pair of adjacent electrodes for positioning the electrodes (71-80) at predetermined mutual distances along the axial direction (Z). A first electrode and a second electrode each comprise an electrode body with one or more support portions (86), wherein each support portion is configured to accommodate at least one spacing structure (89). The electrode stack has at least one clamping member (91-91c) configured to hold the support portions (86) of the first and second electrodes, as well as the intermediate spacing structure (89) together.
H01J 37/065 - Montage des canons ou de leurs éléments constitutifs
H01J 37/317 - Tubes à faisceau électronique ou ionique destinés aux traitements localisés d'objets pour modifier les propriétés des objets ou pour leur appliquer des revêtements en couche mince, p. ex. implantation d'ions
The invention relates to a projection lens assembly for directing a beam toward a target. This assembly includes a lens support body (52) that spans a plane (P), and has a connection region (58) and a lateral edge (56). The lens support body is arranged for insertion into a frame (42) of a processing unit along an insertion direction (X) parallel with the plane (P). The projection lens assembly includes conduits (60-64) emanating from the connection region, and a conduit guiding body (70-81) for accommodating the conduits. The guiding body includes a first guiding portion (72) for guiding the conduits from the connection region, along the plane to a lateral region (B) beyond the lateral edge. The guiding body also includes a second guiding portion (78) for guiding the conduits from the lateral region (B) toward a tilted edge (79) of the conduit guiding body.
H01J 37/20 - Moyens de support ou de mise en position de l'objet ou du matériauMoyens de réglage de diaphragmes ou de lentilles associées au support
H01J 37/317 - Tubes à faisceau électronique ou ionique destinés aux traitements localisés d'objets pour modifier les propriétés des objets ou pour leur appliquer des revêtements en couche mince, p. ex. implantation d'ions
H01J 37/30 - Tubes à faisceau électronique ou ionique destinés aux traitements localisés d'objets
H05K 7/14 - Montage de la structure de support dans l'enveloppe, sur cadre ou sur bâti
The invention relates to a charged particle optical device for manipulating a trajectory of multiple beamlets of charged particles. Said charged particle optical device comprising an electromagnetic deflector comprising a planar substrate having an upper side and a lower side of said substrate, and an even thickness. The substrate comprises: a through opening for passing said beamlets there through, wherein said through opening debouches in the upper and lower side of said substrate; a first and a second coil, wherein each of said coils preferably is a substantially helical coil and comprises conducting upper leads arranged at the upper side, conducting lower leads arranged at the lower side, and vias extending through said substrate and which conductively connect one of said upper leads with one of said lower leads for forming said coil; wherein said first and second coils are arranged on either side of the through opening.
H01J 37/147 - Dispositions pour diriger ou dévier la décharge le long d'une trajectoire déterminée
H01J 37/317 - Tubes à faisceau électronique ou ionique destinés aux traitements localisés d'objets pour modifier les propriétés des objets ou pour leur appliquer des revêtements en couche mince, p. ex. implantation d'ions
The invention relates to a drying apparatus for use in a lithography system for drying a planar object such as a wafer, the apparatus comprising a drying device for eliminating liquid or droplets thereof from a planar target such as a wafer, wherein said device comprises a first slit and a second slit arranged in close proximity of the target, a gap being present between the target and the dryer, the first slit included for supplying pressurised gas into said gap directed to the target, the second slit included for discharging said liquid by means of said gas away from the target.
H01L 21/67 - Appareils spécialement adaptés pour la manipulation des dispositifs à semi-conducteurs ou des dispositifs électriques à l'état solide pendant leur fabrication ou leur traitementAppareils spécialement adaptés pour la manipulation des plaquettes pendant la fabrication ou le traitement des dispositifs à semi-conducteurs ou des dispositifs électriques à l'état solide ou de leurs composants
A sub-beam aperture array for forming a plurality of sub-beams from one or more charged particle beams. The sub-beam aperture array comprises one or more beam areas, each beam area comprising a plurality of sub-beam apertures arranged in a non-regular hexagonal pattern, the sub-beam apertures arranged so that, when projected in a first direction onto a li parallel to a second direction, the sub-beam apertures are uniformly spaced along the line, a wherein the first direction is different from the second direction. The system further comprises a beamlet aperture array with a plurality of beamlet apertures arranged in one or more groups. The beamlet aperture array is arranged to receive the sub-beams and form a plurality of beamlets at the locations of the beamlet apertures of the beamlet array.
H01J 37/317 - Tubes à faisceau électronique ou ionique destinés aux traitements localisés d'objets pour modifier les propriétés des objets ou pour leur appliquer des revêtements en couche mince, p. ex. implantation d'ions
H01J 37/09 - DiaphragmesÉcrans associés aux dispositifs électronoptiques ou ionoptiquesCompensation des champs perturbateurs
Cabinet (10) for accommodating electronic equipment (46). The cabinet comprises a casing (12) with an access opening (24) at a access side (23), and a second side (17) opposite to the access side, an electronic equipment rack (40a), a first plenum space (35) between the access side and the rack, and a channel (36) in fluid communication with the second side and the first plenum space. The cabinet encloses a first cooling medium (27) that is in thermal communication with the electronic equipment. A cooling arrangement (29) is provided at the second side, which comprises a flow generator (30) for generating a flow (Φf) of the first cooling medium from the first plenum space across the electronic equipment toward the second side, and a heat exchanger (31) for extracting heat from the first cooling medium. The first cooling medium is subsequently recirculated through the channel to the first plenum space.
A charged particle lithography system for exposing a wafer according to pattern data. The system comprises an electron optical column for generating a plurality of electron beamlets for exposing the wafer, the electron optical column including a beamlet blanker array for switching the beamlets on or off, a data path for transmitting beamlet control data for control of the switching of the beamlets, and a wafer positioning system for moving the wafer under the electron optical column in a scan direction. The wafer positioning system is provided with synchronization signals from the data path to align the wafer with the electron beams from the electron-optical column. The data path further comprises one or more processing units for generating the beamlet control data and one or more transmission channels for transmitting the beamlet control data to the beamlet blanker array.
H01J 37/302 - Commande des tubes par une information d'origine externe, p. ex. commande par programme
H01J 37/317 - Tubes à faisceau électronique ou ionique destinés aux traitements localisés d'objets pour modifier les propriétés des objets ou pour leur appliquer des revêtements en couche mince, p. ex. implantation d'ions
G06T 1/20 - Architectures de processeursConfiguration de processeurs p. ex. configuration en pipeline
B82Y 10/00 - Nanotechnologie pour le traitement, le stockage ou la transmission d’informations, p. ex. calcul quantique ou logique à un électron
B82Y 40/00 - Fabrication ou traitement des nanostructures
H01J 37/04 - Dispositions des électrodes et organes associés en vue de produire ou de commander la décharge, p. ex. dispositif électronoptique, dispositif ionoptique
H01J 37/30 - Tubes à faisceau électronique ou ionique destinés aux traitements localisés d'objets
H04N 1/405 - Conversion en demi-teintes, c.-à-d. conversion du signal d'image d'un original à tons continus en un signal correspondant ne possédant que deux niveaux
40.
DETERMINING A POSITION OF A SUBSTRATE IN LITHOGRAPHY
The invention relates to a substrate (12, 513) comprising an optical position mark (100) for being read-out by an optical recording head (500) for emitting light of predetermined wavelength, preferably red or infra-red light, more in particular of 635 nm light, the optical position mark (100) having a mark height (MH), a mark length (ML) and a predetermined known position on the substrate (12,513), the optical position mark (100) extending along a longitudinal direction (x) and being arranged for varying a reflection coefficient of the position mark (100) along said longitudinal direction (x), wherein the optical position mark (100) comprises: - a first region (101) having a first reflection coefficient and a first width (W); - a second region (102) neighboring the first region (101) and forming a first region pair (105), the second region (102) having a second reflection coefficient and a second width (W), and the second reflection coefficient being different from the first reflection coefficient, wherein the first region (101) comprises sub-wavelength structures (SWS) in comparison with a wavelength of the predetermined wavelength light.
G03F 9/00 - Mise en registre ou positionnement d'originaux, de masques, de trames, de feuilles photographiques, de surfaces texturées, p. ex. automatique
H01J 37/304 - Commande des tubes par une information en provenance des objets, p. ex. signaux de correction
H01J 37/317 - Tubes à faisceau électronique ou ionique destinés aux traitements localisés d'objets pour modifier les propriétés des objets ou pour leur appliquer des revêtements en couche mince, p. ex. implantation d'ions
The invention relates to a multi-axis differential interferometer (1) for measuring a displacement and/or rotation between a first reflective surface (21, 321) and a second reflective surface (81, 381), wherein said measuring is carried out using at least two pairs of beams, wherein each pair is formed by a measurement beam (Mb) to be emitted onto a first one (21, 321) of said reflective surfaces, and a reference beam (Rb) to be emitted onto another one (81, 381) of said reflective surfaces, said interferometer (1) comprising: a first optical module (20) and a second optical module (40), wherein each optical module (20, 40) is configured for receiving a respective coherent beam and for creating one of said pairs therefrom. The invention further relates to a lithography system comprising such an interferometer and to a method for assembling such a multi-axis differential interferometer.
H01J 37/317 - Tubes à faisceau électronique ou ionique destinés aux traitements localisés d'objets pour modifier les propriétés des objets ou pour leur appliquer des revêtements en couche mince, p. ex. implantation d'ions
The invention relates to a modulation device for modulating charged particle beamlets in accordance with pattern data in a multi-beamlet charged particle lithography system. The device comprises a plate-like body, an array of beamlet deflectors, a plurality of power supply terminals (202-205) for supplying at least two different voltages, a plurality of control circuits, and a conductive slab (201) for supplying electrical power to one or more of the power supply terminals (202-205). The plate-like body is divided into an elongated beam area (51) and an elongated non-beam area (52) positioned with their long edges adjacent to each other. The beamlet deflectors are located in the beam area. The control circuits are located in non-beam area. The conductive slab is connected to the control circuits in the non-beam area. The conductive slab comprises a plurality of thin conductive plates (202-205).
H01J 37/317 - Tubes à faisceau électronique ou ionique destinés aux traitements localisés d'objets pour modifier les propriétés des objets ou pour leur appliquer des revêtements en couche mince, p. ex. implantation d'ions
H01J 37/04 - Dispositions des électrodes et organes associés en vue de produire ou de commander la décharge, p. ex. dispositif électronoptique, dispositif ionoptique
43.
METHOD FOR DETERMINING A BEAMLET POSITION AND METHOD FOR DETERMINING A DISTANCE BETWEEN TWO BEAMLETS IN A MULTI-BEAMLET EXPOSURE APPARATUS
The invention relates to a method for determining a beamlet position in a charged particle multi-beamlet exposure apparatus. The apparatus is provided with a sensor comprising a conversion element for converting charged particle energy into light and a light sensitive detector. The conversion element is provided with a sensor surface area provided with a 2D-pattern of beamlet blocking and non-blocking regions. The method comprises taking a plurality of measurements and determining the position of the beamlet with respect to the 2D-pattern on the basis of a 2D-image created by means of the measurements. Each measurement comprises exposing a feature onto a portion of the 2D-pattern with a beamlet, wherein the feature position differs for each measurement, receiving light transmitted through the non-blocking regions, converting the received light into a light intensity value, and assigning the light intensity value to the position at which the measurement was taken.
H01J 37/317 - Tubes à faisceau électronique ou ionique destinés aux traitements localisés d'objets pour modifier les propriétés des objets ou pour leur appliquer des revêtements en couche mince, p. ex. implantation d'ions
H01J 37/304 - Commande des tubes par une information en provenance des objets, p. ex. signaux de correction
44.
CHARGED PARTICLE LITHOGRAPHY SYSTEM AND BEAM GENERATOR
The present invention relates to a charged particle lithography system. The system has a beamlet generator including a beam generator for generating a charged particle beam and an aperture array (6) for forming a plurality of beamlets from the charged particle beam, and a beamlet projector for projecting the beamlets onto a target surface. The charged particle beam generator includes a charged particle source (3) for generating a diverging charged particle beam, a collimator system (5a, 5b, 5c), one or more pumps (220), a high voltage shielding arrangement (201) for shielding components outside the high voltage shielding arrangement from high voltages within the high voltage shielding arrangement, and a cooling arrangement (203, 204) for removing heat. The one or more pumps are located between the high voltage shielding arrangement and the cooling arrangement.
H01J 37/09 - DiaphragmesÉcrans associés aux dispositifs électronoptiques ou ionoptiquesCompensation des champs perturbateurs
H01J 37/30 - Tubes à faisceau électronique ou ionique destinés aux traitements localisés d'objets
H01J 37/317 - Tubes à faisceau électronique ou ionique destinés aux traitements localisés d'objets pour modifier les propriétés des objets ou pour leur appliquer des revêtements en couche mince, p. ex. implantation d'ions
45.
CHARGED PARTICLE MULTI-BEAMLET LITHOGRAPHY SYSTEM AND COOLING ARRANGEMENT MANUFACTURING METHOD
A charged particle multi-beamlet lithography system comprising a beamlet generator for generating beamlets, a beamlet modulator for forming modulated beamlets, and a beamlet projector for projecting the modulated beamlets onto a target surface. The generator, modulator and/or projector comprise one or more plates provided with apertures for letting the beamlets pass through the plate. The apertures are grouped to form beam areas distinct from non-beam areas having no beamlet apertures. At least one of the plates with apertures is provided with a cooling arrangement (93) disposed on its surface in a non-beam area. The cooling arrangement comprising a plate-shaped body with an inlet (31) for receiving a cooling liquid, a plurality of cooling channels (94) for conveying the cooling liquid therein, and an outlet (35) for removing the cooling liquid. Between the cooling channels, the plate- shaped body has slots (34) that are aligned with the beam areas.
H01J 37/04 - Dispositions des électrodes et organes associés en vue de produire ou de commander la décharge, p. ex. dispositif électronoptique, dispositif ionoptique
H01J 37/317 - Tubes à faisceau électronique ou ionique destinés aux traitements localisés d'objets pour modifier les propriétés des objets ou pour leur appliquer des revêtements en couche mince, p. ex. implantation d'ions
46.
CHARGED PARTICLE LITHOGRAPHY SYSTEM AND BEAM GENERATOR
The invention relates to a charged particle lithography system for exposing a target. The system includes a charged particle beam generator for generating a charged particle beam; an aperture array (6) for forming a plurality of beamlets from the charged particle beam; and a beamlet projector (12) for projecting the beamlets onto a surface of the target. The charged particle beam generator includes a charged particle source (3) for generating a diverging charged particle beam; a collimator system (5a,5b,5c,5d; 72;300) for refracting the diverging charged particle beam; and a cooling arrangement (203) for removing heat from the collimator system, the cooling arrangement comprising a body surrounding at least a portion of the collimator system.
H01J 37/30 - Tubes à faisceau électronique ou ionique destinés aux traitements localisés d'objets
H01J 37/317 - Tubes à faisceau électronique ou ionique destinés aux traitements localisés d'objets pour modifier les propriétés des objets ou pour leur appliquer des revêtements en couche mince, p. ex. implantation d'ions
The invention relates to an arrangement for transporting radicals. The arrangement includes a plasma generator and a guiding body. The plasma generator includes a chamber (2) in which a plasma may be formed. The chamber has an inlet (5) for receiving an input gas, and one or more outlets (6) for removal of at least one of the plasma and radicals created therein. The guiding body is hollow and is arranged for guiding radicals formed in the plasma towards an area or volume at which contaminant deposition is to be removed. The chamber inlet is coupled to a pressure device (40) for providing a pulsed pressure into the chamber so as to create a flow in the guiding body.
H01J 37/32 - Tubes à décharge en atmosphère gazeuse
H01J 37/317 - Tubes à faisceau électronique ou ionique destinés aux traitements localisés d'objets pour modifier les propriétés des objets ou pour leur appliquer des revêtements en couche mince, p. ex. implantation d'ions
H01L 21/67 - Appareils spécialement adaptés pour la manipulation des dispositifs à semi-conducteurs ou des dispositifs électriques à l'état solide pendant leur fabrication ou leur traitementAppareils spécialement adaptés pour la manipulation des plaquettes pendant la fabrication ou le traitement des dispositifs à semi-conducteurs ou des dispositifs électriques à l'état solide ou de leurs composants
48.
CHARGED PARTICLE LITHOGRAPHY SYSTEM WITH ALIGNMENT SENSOR AND BEAM MEASUREMENT SENSOR
A multi-beamlet charged particle beamlet lithography system for transferring a pattern to a surface of a substrate. The system comprises a projection system (311) for projecting a plurality of charged particle beamlets (7) onto the surface of the substrate; a chuck (313) moveable with respect to the projection system; a beamlet measurement sensor (i.a. 505, 511) for determining one or more characteristics of one or more of the charged particle beamlets, the beamlet measurement sensor having a surface (501) for receiving one or more of the charged particle beamlets; and a position mark measurement system for measuring a position of a position mark (610, 620, 635), the position mark measurement system comprising an alignment sensor (361, 362). The chuck comprises a substrate support portion for supporting the substrate, a beamlet measurement sensor portion (460) for accommodating the surface of the beamlet measurement sensor, and a position mark portion (470) for accommodating the position mark.
H01J 37/304 - Commande des tubes par une information en provenance des objets, p. ex. signaux de correction
H01J 37/317 - Tubes à faisceau électronique ou ionique destinés aux traitements localisés d'objets pour modifier les propriétés des objets ou pour leur appliquer des revêtements en couche mince, p. ex. implantation d'ions
49.
LITHOGRAPHY SYSTEM AND METHOD FOR PROCESSING A TARGET, SUCH AS A WAFER
A method for operating a target processing system for processing a target (23) on a chuck (13), the method comprising providing at least a first chuck position mark (27) and a second chuck position mark (28) on the chuck (13); providing an alignment sensing system (17) arranged for detecting the first and second chuck position marks (27, 28), the alignment sensing system (17) comprising at least a first alignment sensor (61) and a second alignment sensor (62); moving the chuck (13) to a first position based on at least one measurement of the alignment sensing system (17); and measuring at least one value related to the first position of the chuck.
G03F 9/00 - Mise en registre ou positionnement d'originaux, de masques, de trames, de feuilles photographiques, de surfaces texturées, p. ex. automatique
H01J 37/304 - Commande des tubes par une information en provenance des objets, p. ex. signaux de correction
50.
DEVICE FOR SPOT SIZE MEASUREMENT AT WAFER LEVEL USING A KNIFE EDGE AND A METHOD FOR MANUFACTURING SUCH A DEVICE
The invention relates to a device for spot size measurement at wafer level in a multi charged particle beam lithography system. The device comprises a knife edge structure on top of a scintillating material, such a YAG material. The knife edge structure is arranged in a Si wafer which has a top plane at a sharp angle to a (1 1 0) plane of the Si. In an embodiment the angle is in the range from 2 to 4 degrees, preferably in the range from 2.9 - 3.1 degrees. The invention relates in addition to a method for manufacturing a device for spot size measurement at wafer level in a multi charged particle beam lithography system.
H01J 37/09 - DiaphragmesÉcrans associés aux dispositifs électronoptiques ou ionoptiquesCompensation des champs perturbateurs
H01J 37/30 - Tubes à faisceau électronique ou ionique destinés aux traitements localisés d'objets
H01J 37/317 - Tubes à faisceau électronique ou ionique destinés aux traitements localisés d'objets pour modifier les propriétés des objets ou pour leur appliquer des revêtements en couche mince, p. ex. implantation d'ions
An arrangement for generating plasma, the arrangement comprising a primary plasma source (1) arranged for generating plasma, a hollow guiding body (11) arranged for guiding at least a portion of the plasma generated by the primary plasma source to a secondary plasma source (25), and an outlet (14) for emitting at least a portion of the atomic radicals produced by the plasma from the arrangement.
An arrangement for generating plasma, the arrangement comprising a primary plasma source (1) comprising a primary source chamber (15) and a first coil (4) for generating plasma in the primary source chamber, a secondary plasma source (25) comprising a secondary source chamber (16) and a second coil (26) for enhancing plasma generated by the primary plasma source and/or generating plasma in the secondary source chamber generating plasma in the primary source chamber, a hollow guiding body (11) arranged for guiding at least a portion of the plasma generated by the primary plasma source to the secondary plasma source, and an outlet (14) for emitting at least a portion of the plasma generated by the arrangement.
A lithography system (10) comprising a radiation projection system (20) for projecting radiation onto a substrate, a substrate transport system (30) for loading and positioning the substrate to be processed in the path of the projected radiation, a control system (40) for controlling the substrate transport system to move the substrate, and a resist characterization system (50) arranged for determining whether a specific type of resist is suitable to be exposed by radiation within the lithography system. The resist characterization system (50) may be arranged for exposing the resist on a surface of the substrate with one or more radiation beams, measuring a mass distribution of molecular fragments emitted from the resist, predicting a growth rate of deposited molecular fragments on the basis of a growth rate model and the measured mass distribution, and comparing the expected growth rate with a predetermined threshold growth rate.
H01J 37/317 - Tubes à faisceau électronique ou ionique destinés aux traitements localisés d'objets pour modifier les propriétés des objets ou pour leur appliquer des revêtements en couche mince, p. ex. implantation d'ions
The invention relates to an assembly, preferably for use in a lithography system or a microscopy system, for providing an accurately aligned stack of two or more modules (50) in a stacking direction. Each of the two or more modules comprises three support members (51). The assembly comprises a frame comprising three planar alignment surfaces (61) which extend in the stacking direction and which are angularly off-set with respect to each other. In addition, each of the three support members of each one of the two or more modules, when arranged in said frame, abuts against a corresponding one of the three alignment surfaces. The frame is provided with an opening between two of the three planar alignment surfaces for inserting a module in the assembly, said two planar alignment surfaces on either side of the opening are arranged at least partially facing said opening.
H01J 37/317 - Tubes à faisceau électronique ou ionique destinés aux traitements localisés d'objets pour modifier les propriétés des objets ou pour leur appliquer des revêtements en couche mince, p. ex. implantation d'ions
H01J 37/067 - Éléments de rechange des canonsRéglage mutuel d'électrodes
A target processing machine (100), such as a lithography or inspection machine, comprising a rigid base plate (150), a projection column (101) for projecting one or more optical or particle beams on to a target (130), a support frame (102) supporting the projection column, the support frame being supported by and fixed to the base plate, a stage comprising a movable part (128) for carrying the target and a fixed part (132, 133) being supported by and fixed to the base plate, a beam sensor (160) for detecting one or more of the beams projected by the column, the beam sensor at least in part being supported by and fixed to the base plate, and a vacuum chamber (110) enclosing the support frame and the column, for maintaining a vacuum environment in the interior space of the chamber, the vacuum chamber formed with the base plate forming part thereof, and supporting a plurality of wall panels (171, 172) including a plurality of side wall panels (171) supported by and fixed thereto.
The invention relates to a target processing tool (1), comprising a target carrier guidance assembly (100), said target carrier guidance assembly comprising: a guide surface (113) having a longitudinal axis in a first direction (Y), a target carrier (130) for carrying and displacing a target (10) along said first direction, a bearing support (140) mounted to the target carrier by means of a flexible mount (162, 163), a bearing (101) arranged between the guide surface and the bearing support, and a biasing element (150), connected to the target carrier and to the bearing support, adapted for biasing said bearing support along a second direction (X) against the bearing, wherein preferably said second direction is perpendicular to said first direction.
The invention relates to a support structure and support module, for instance for use in a lithography system, comprising a frame and a support for supporting a load, wherein said support is moveable relative to said frame, said support structure further comprising a force compensation spring assembly connecting said support to said frame for at least partially supporting said support and/or said load, wherein said force compensation spring assembly comprises a first spring having a negative stiffness characteristic over a predefined range of motion of said spring, and a second spring having a positive stiffness.
F16F 3/02 - Ensembles de ressorts constitués par plusieurs ressorts, p. ex. pour réaliser une caractéristique d'élasticité voulue avec ressorts en acier ou faits d'un autre matériau, ayant une friction intérieure faible
F16F 15/073 - Suppression des vibrations dans les systèmes non rotatifs, p. ex. dans des systèmes alternatifsSuppression des vibrations dans les systèmes rotatifs par l'utilisation d'organes ne se déplaçant pas avec le système rotatif utilisant des moyens élastiques avec ressorts métalliques utilisant uniquement des ressorts à lames
58.
ASSEMBLY AND A METHOD FOR LIFTING A MODULE OF A LITHOGRAPHY SYSTEM IN VERTICAL DIRECTION AND A LITHOGRAPHY SYSTEM COMPRISING SUCH ASSEMBLY
An assembly and a method for lifting a module of a lithography system from its support and a lithography system comprising such device are provided. The assembly comprises a body and a track. The track comprises a ramp. The body is provided with two wheels, wherein the first wheel vertically may extend a distance h further from a central horizontal plane of the body than the second wheel and an axis of the first wheel may be positioned in the horizontal direction at a distance D from an axis of the second wheel. The track may comprise a first and a second ramp, wherein the first ramp is positioned at a distance D from the second ramp in the horizontal direction and at a distance h from the second ramp in the vertical direction. Insertion of the body between the module and the support causes the module to be lifted from the support.
H01J 37/317 - Tubes à faisceau électronique ou ionique destinés aux traitements localisés d'objets pour modifier les propriétés des objets ou pour leur appliquer des revêtements en couche mince, p. ex. implantation d'ions
A target positioning device, in particular for a lithography system, comprising a carrier (300) for carrying a target, and a stage for carry¬ ing and moving the carrier a long a first direction (X). The stage com¬ prising two X-stage bases (401, 402), both arranged on top of a com¬ mon base plate (403), each X-stage base carries an X-stage carriage (404, 405), and a Y-beam (406) comprising a Y-stage (407) for carry¬ ing said carrier and moving the carrier in a second direction (Y). The Y-beam bridges the space between the X-stage carriages and is con¬ nected to the X-stage carriages via a flexible coupling (408, 409). The device further comprises two motors (Ml, M2) each for driving a cor¬ responding X-stage carriage along its corresponding X-stage base. The two motors are arranged at least substantially below the stage. Each motor of said two motors is coupled to an eccentric cam or crank (410, 411) which is connected to the corresponding X-stage carriage via a crank shaft (412, 413).
The invention relates to a substrate processing apparatus (10) comprising a support frame (60), a radiation projection system (20) for projecting radiation onto a substrate to be processed, a substrate support structure (30) for supporting the substrate, and a fluid transfer system (150). The radiation projection system comprises a cooling arrangement (130) and is supported by and vibrationally decoupled from the support frame such that vibrations of the support frame above a predetermined maximum frequency are substantially decoupled from the radiation projection system. The fluid transfer system comprises at least one tube (140) fixed at two points (151,152), and comprises a flexible portion. A substantial part of the flexible portion extends over a plane substantially parallel to the substrate support structure surface. The stiffness of the flexible portion is adapted to substantially decouple vibrations at the second fixed point which are above the predetermined maximum frequency from the first fixed point.
The invention relates to a support structure (1) for supporting a wafer table in a lithography system, said support structure comprising: a base (20) comprising a reference surface (40, 50), an interface member (30), made from a low thermal expansion ma¬ terial, arranged on top of said base and adapted for positioning said wafer table on the support structure, wherein said interface member is connected to said reference sur¬ face via at least one strut (60, 61, 66, 67), and wherein the at least one strut is made from a low thermal expansion material. The inven¬ tion further relates to a lithography system comprising such a support structure.
The invention relates to a projection system (1) for projecting one or more beams on a target (10), said system comprising a frame (2), a projection module (20) comprising a beam source for providing the one or more beams, projection optics (23) for projecting beams on the target, a target positioning module (30), comprising a carrier (31) for carrying the target and a stage for carrying and positioning the carrier, a measurement system (24) for determining a position of the projection module relative to the carrier, a controller (80) adapted for controlling the target positioning module to position the target under the projection module based on said determined position, wherein the projection module is connected to the frame via a flexible coupling (61-63) for dampening the propagation of vibrations from said frame to said projection module, and wherein the controller is adapted control the target positioning module to compensate for residual vibrations as measured by said measurement system.
H01J 37/317 - Tubes à faisceau électronique ou ionique destinés aux traitements localisés d'objets pour modifier les propriétés des objets ou pour leur appliquer des revêtements en couche mince, p. ex. implantation d'ions
The invention relates to a vibration isolation module (101) for a lithographic apparatus or an inspection apparatus. The module comprises a support frame (102), an intermediate body (103) and a support body (104) for accommodating the lithographic apparatus. The intermediate body is connected to the support frame by means of at least one spring element such that the intermediate body is a hanging body. The support body is connected to the intermediate body by means of at least one pendulum rod (108) such that the support body is a hanging body. The invention further relates to a substrate processing system comprising such vibration isolation module.
The invention relates to a lithography system (1) for patterning a target (30), said system comprising a feedback control system (90) comprising an actuator (40) for displacing the target, a measurement system (50) for measuring a position of said target, and a control unit (60) adapted for controlling the actuator based on the position measured by the measurement system, said feedback control system having a first latency {λι) being a maximum latency between measuring and controlling the actuator based on said measuring, a storage system (70) for storing the measured positions, comprising a receive buffer (71) and a storage unit (72) with a second latency (λ2) being an average latency between receiving measured positions in the receive buffer and storing said measured positions in the storage unit, wherein the first latency is at least an order of magnitude smaller than the second latency, the feedback control system comprising a unidirectional connection (82) for transmitting said measured positions to the storage system.
A capacitive measurement system for generating a measurement signal representative of a measured position or distance to a target. The system has a first circuit comprising a thin film capacitive sensor (1a) arranged for providing a sensor capacitance in dependence on the measured position or distance; a cable (30a) comprising a sensor wire (31a) and a co-axial shield conductor (32a), the cable having a remote end and a local end, the sensor wire electrically connected to the capacitive sensor at the local end of the cable; a voltage source (24a) having an output terminal connected to the sensor wire at the remote end of the cable and arranged to energize the capacitive sensor, and energize the shield conductor with essentially the same voltage as the sensor wire; and a current measuring circuit (21a) having first and second input terminals and an output terminal, the current measuring circuit connected in series with the first input terminal connected to the output terminal of the voltage source and the second input terminal connected to the sensor wire at the remote end of the cable, the current measuring circuit arranged to measure current flowing in the sensor wire and generate the measurement signal at the output terminal.
G01D 5/24 - Moyens mécaniques pour le transfert de la grandeur de sortie d'un organe sensibleMoyens pour convertir la grandeur de sortie d'un organe sensible en une autre variable, lorsque la forme ou la nature de l'organe sensible n'imposent pas un moyen de conversion déterminéTransducteurs non spécialement adaptés à une variable particulière utilisant des moyens électriques ou magnétiques influençant la valeur d'un courant ou d'une tension en faisant varier la capacité
A measurement system for measuring an input electrical current (Ics) from a current source (CS) and generating a current measurement signal, comprising a current measuring circuit (70) having a first input terminal (72) connected to the current source and an output terminal (74) for providing the current measurement signal. The current measuring circuit further comprises one or more power supply terminals (75, 76) arranged to receive one or more voltages from a power supply (77a, 77b) for powering the current measuring circuit. The current measuring circuit also comprises a first voltage source (VD) coupled to the one or more power supply terminals, the first voltage source providing a disturbance voltage to the one or more power supply terminals, the disturbance voltage representing a voltage at the first input terminal.
G01D 5/24 - Moyens mécaniques pour le transfert de la grandeur de sortie d'un organe sensibleMoyens pour convertir la grandeur de sortie d'un organe sensible en une autre variable, lorsque la forme ou la nature de l'organe sensible n'imposent pas un moyen de conversion déterminéTransducteurs non spécialement adaptés à une variable particulière utilisant des moyens électriques ou magnétiques influençant la valeur d'un courant ou d'une tension en faisant varier la capacité
The invention relates to a method and a device for manipulation of one or more charged particle beams of a plurality of charged particle beamlets in a charged particle multi-beamlet apparatus. The manipulator device comprises a planar substrate comprising an array of through openings in the plane of the substrate, each of these through openings is arranged for passing the at least one charged particle beamlet there through, wherein each of the through openings is provided with one or more electrodes arranged around the through opening, and a electronic control circuit for providing control signals to the one or more electrodes of each through opening, wherein the electronic control circuit is arranged for providing the one or more electrodes of each individual through opening with an at least substantially analog adjustable voltage.
H01J 37/317 - Tubes à faisceau électronique ou ionique destinés aux traitements localisés d'objets pour modifier les propriétés des objets ou pour leur appliquer des revêtements en couche mince, p. ex. implantation d'ions
The invention relates to a lithography system for processing a target, wherein the lithography system comprises a final projection system arranged for projecting a pattern on the target surface. The lithography system comprises a mark position detection system arranged for detecting a position of a position mark on the target surface. The mark position detection system comprises an optical element arranged for projecting a light beam on the target surface and a light detector arranged for detecting a reflected light beam. The optical element may be positioned adjacent to the final projection system and the light detector may be positioned inside a frame.
G03F 9/00 - Mise en registre ou positionnement d'originaux, de masques, de trames, de feuilles photographiques, de surfaces texturées, p. ex. automatique
69.
METHOD FOR SPLITTING A PATTERN FOR USE IN A MULTI-BEAMLET LITHOGRAPHY APPARATUS
The invention relates to a method for splitting a pattern for use in a multi-beamlet lithography apparatus. The method comprises providing an input pattern to be exposed onto a target surface by means of a plurality of beamlets of the multi-beamlet lithography apparatus. Within the input pattern first and second regions are identified. A first region is a region that is exclusively exposable by a single beamlet of the plurality of beamlets. A second region is a region that is exposable by more than one beamlet of the plurality of beamlets. On the basis of an assessment of the first and second regions it is determined what portion of the pattern is to be exposed by each beamlet.
H01J 37/317 - Tubes à faisceau électronique ou ionique destinés aux traitements localisés d'objets pour modifier les propriétés des objets ou pour leur appliquer des revêtements en couche mince, p. ex. implantation d'ions
70.
METHOD OF PROCESSING A SUBSTRATE IN A LITHOGRAPHY SYSTEM
A method of processing substrates in a lithography system unit of a lithography system, the lithography system unit comprising at least two substrate preparation units (360a-360d), a load lock unit (310) comprising at least first and second substrate positions, and a substrate handling robot for transferring substrates between the substrate preparation units and the load lock unit. The method comprises providing a sequence of substrates to be exposed to the robot, including an Nth substrate, an N-1th substrate immediately preceding the Nth substrate, and an N+1th substrate immediately following the Nth substrate; transferring the Nth substrate by means of the robot to a first one of the substrate preparation units; clamping the Nth substrate on a first substrate support structure in the first substrate preparation unit, the Nth substrate and first substrate support structure together forming a clamped Nth substrate; transferring the clamped Nth substrate by means of the robot from the first substrate preparation unit to an unoccupied one of the first and second positions in the load lock unit for exposure in the lithography system unit; and exposing the clamped Nth substrate in the lithography system unit.
The invention relates to a charged particle system such as a multi beam lithography system, comprising a manipulator device for manipulation of one or more charged particle beams, wherein the manipulator device comprises at least one through opening in the plane of the planar substrate for passing at least one charged particle beam there through. Each through opening is provided with electrodes arranged in a first set of multiple first electrodes along a first part of a perimeter of said through opening and in a second set of multiple second electrodes along a second part of said perimeter. An electronic control circuit is arranged for providing voltage differences the electrodes in dependence of a position of the first and second electrode along the perimeter of the through opening.
G21K 1/087 - Déviation, concentration ou focalisation du faisceau par des moyens électriques ou magnétiques par des moyens électriques
H01J 37/317 - Tubes à faisceau électronique ou ionique destinés aux traitements localisés d'objets pour modifier les propriétés des objets ou pour leur appliquer des revêtements en couche mince, p. ex. implantation d'ions
H01J 29/46 - Dispositions des électrodes et des pièces associées en vue de produire ou de commander le rayon ou le faisceau, p. ex. dispositifs électronoptiques
H01J 37/09 - DiaphragmesÉcrans associés aux dispositifs électronoptiques ou ionoptiquesCompensation des champs perturbateurs
72.
CHARGED PARTICLE SYSTEM FOR PROCESSING A TARGET SURFACE
The invention relates to a charged particle system for processing a target surface with at least one charged particle beam. The system comprises an optical column with a beam generator module for generating a plurality of charged particle beams, a beam modulator module for switching on and off said plurality of beams and a beam projector module for projecting beams or subbeams on said target surface. The system further comprises a frame supporting each of said modules in a fixed position and alignment elements for aligning at least one of beams and/or subbeams with a downstream module element.
H01J 37/317 - Tubes à faisceau électronique ou ionique destinés aux traitements localisés d'objets pour modifier les propriétés des objets ou pour leur appliquer des revêtements en couche mince, p. ex. implantation d'ions
H01J 37/067 - Éléments de rechange des canonsRéglage mutuel d'électrodes
An apparatus (401) for transferring substrates (405) within a lithography system (300), the lithography system comprising a substrate preparation unit (360a-d) for clamping a substrate onto a substrate support structure to form a clamped substrate, and an interface with a substrate supply system (315) for receiving unclamped substrates. The apparatus comprises a body (680) provided with a first set of fingers (684a, b) for carrying an undamped substrate and a second set of fingers (685a, b) for carrying a substrate support structure (403), and the first set of fingers is located below the second set of fingers, and fingers of the first set of fingers have a different shape than the fingers of the second set of fingers.
A clustered substrate processing system comprising one or more lithography elements, each lithography element arranged for independent exposure of substrates according to pattern data. Each lithography element comprises a plurality of lithography subsystems, a control network arranged for communication of control information between the lithography subsystems and at least one element control unit, the element control unit arranged to transmit commands to the lithography subsystems and the lithography subsystems arranged to transmit responses to the element control unit. Each lithography element also comprises a cluster front-end for interface to an operator or host system, the front-end arranged for issuing control information to the at least one element control unit to control operation of the one or more lithography subsystems for exposure of one or more wafers. The front-end is arranged for issuing a process program to the element control unit, the process program comprising a set of predefined commands and associated parameters, each command corresponding to a predefined action or sequence of actions to be performed by one or more of the lithography subsystems, and the parameters further defining how the action or sequence of actions are to be performed.
H01J 37/317 - Tubes à faisceau électronique ou ionique destinés aux traitements localisés d'objets pour modifier les propriétés des objets ou pour leur appliquer des revêtements en couche mince, p. ex. implantation d'ions
75.
LITHOGRAPHY SYSTEM FOR PROCESSING A TARGET, SUCH AS A WAFER, A METHOD FOR OPERATING A LITHOGRAPHY SYSTEM FOR PROCESSING A TARGET, SUCH AS A WAFER AND A SUBSTRATE FOR USE IN SUCH A LITHOGRAPHY SYSTEM
The invention relates to a lithography system for processing a target, such as a wafer and a substrate for use in such a lithography system. The lithography system comprises a beam source arranged for providing a patterning beam, a final projection system arranged for projecting a pattern on the target surface, a chuck arranged for supporting the target and a mark position system arranged for detecting a position mark on a surface.
G03F 9/00 - Mise en registre ou positionnement d'originaux, de masques, de trames, de feuilles photographiques, de surfaces texturées, p. ex. automatique
76.
LITHOGRAPHY SYSTEM FOR PROCESSING A TARGET, SUCH AS A WAFER, AND A METHOD FOR OPERATING A LITHOGRAPHY SYSTEM FOR PROCESSING A TARGET, SUCH AS A WAFER
The invention relates to a lithography system for processing a target, such as a wafer. The lithography system comprises a beam source arranged for providing a patterning beam, a final projection system arranged for projecting a pattern on the target surface, a chuck arranged for supporting the target and a mark position system connected to the final projection system and arranged for detecting a position mark on a surface.
G03F 9/00 - Mise en registre ou positionnement d'originaux, de masques, de trames, de feuilles photographiques, de surfaces texturées, p. ex. automatique
77.
POSITION DETERMINATION IN A LITHOGRAPHY SYSTEM USING A SUBSTRATE HAVING A PARTIALLY REFLECTIVE POSITION MARK
The invention relates to a substrate for use in a lithography system, said substrate being provided with an at least partially reflective position mark comprising an array of structures, the array extending along a longitudinal direction of the mark, characterized in that said structures are arranged for varying a reflection coefficient of the mark along the longitudinal direction, wherein said reflection coefficient is determined for a predetermined wavelength. In an embodiment a specular reflection coefficient varies along the substrate, wherein high order diffractions are substantially absorbed by the substrate. A position of a beam on a substrate can thus be determined based on the intensity of its reflection in the substrate. The invention further relates to a positioning device and lithography system for cooperation with the substrate, and a method of manufacture of the substrate.
G03F 9/00 - Mise en registre ou positionnement d'originaux, de masques, de trames, de feuilles photographiques, de surfaces texturées, p. ex. automatique
78.
ARRANGEMENT OF OPTICAL FIBERS, AND A METHOD OF FORMING SUCH ARRANGEMENT
The invention relates to a method of forming an optical fiber array. The method comprises providing a substrate having a first surface and an opposing second surface. The substrate is provided with a plurality of apertures extending through the substrate from the first surface to the second surface. Additionally, a plurality of fibers is provided. The fibers have fiber ends with a diameter smaller than the smallest diameter of the apertures. For each fiber, from the first surface side of the substrate, the fiber is inserted in a corresponding aperture such that the fiber end is positioned in close proximity of the second surface. Then the fiber is bent in a predetermined direction such that the fiber abuts a side wall of the aperture at a predetermined position. Finally, the bent fibers are bonded together using an adhesive material.
H01J 37/04 - Dispositions des électrodes et organes associés en vue de produire ou de commander la décharge, p. ex. dispositif électronoptique, dispositif ionoptique
H01J 37/22 - Dispositifs optiques ou photographiques associés au tube
H01J 37/317 - Tubes à faisceau électronique ou ionique destinés aux traitements localisés d'objets pour modifier les propriétés des objets ou pour leur appliquer des revêtements en couche mince, p. ex. implantation d'ions
A clustered substrate processing system comprising a plurality of lithography elements, each lithography element arranged for independent exposure of substrates according to pattern data. Each lithography element comprises a plurality of lithography subsystems, a control network arranged for communication of control information between the lithography subsystems and at least one element control unit, the element control unit arranged to transmit commands to the lithography subsystems and the lithography subsystems arranged to transmit responses to the element control unit, and a data network arranged for communication of data logging information from the lithography subsystems to at least one data network hub, the lithography subsystems arranged to transmit data logging information to the data network hub and the data hub arranged for receiving and storing the data logging information. The system further comprises a cluster front-end for interface to an operator or host system, the cluster front-end arranged for transmitting control information to the at least one machine control unit to control operation of the lithography subsystems for exposure of one or more wafers, and the front-end further arranged for receiving at least a portion of the data logging information received by the data network hub.
H01J 37/317 - Tubes à faisceau électronique ou ionique destinés aux traitements localisés d'objets pour modifier les propriétés des objets ou pour leur appliquer des revêtements en couche mince, p. ex. implantation d'ions
The invention relates to a differential interferometer module adapted for measuring a direction of displacement between a reference mirror (81) and a measurement mirror (21). In an embodiment the differential interferometer module is adapted for emitting three reference beams (rb1, rb2, rb3 ) towards a first mirror and three measurement beams (mb1, mb2, mb3 ) towards a second mirror for determining a displacement between said first and second mirror. In a preferred embodiment the same module is adapted for measuring a relative rotation around two perpendicular axes as well. The present invention further relates to a lithography system comprising such a interferometer module and a method for measuring such a displacement and rotations.
The invention relates to a lithography system comprising an optical column, a moveable target carrier for displacing a target such as a wafer, and a differential interferometer module, wherein the interferometer module is adapted for emitting three reference beams (rbl, rb2, rb3) towards a first mirror (81) and three measurement beams (mbl, mb2, mb3) towards a second mirror (21) for determining a displacement between said first and second mirror. In a preferred embodiment the same module is adapted for measuring a relative rotation around two perpendicular axes as well. The present invention further relates to an interferometer module and method for measuring such a displacement and rotations.
The invention relates to alignment of an interferometer module (60) for use in an exposure tool. An alignment method is provided for aligning an interferometer to the tool while outside of the tool. Furthermore, the invention provides a dual interferometer module, an alignment frame use in the alignment method, and an exposure tool provided with first mounting surfaces for cooperative engagement with second mounting surfaces (62, 63, 64) of an interferometer module.
The invention relates to a system (100) for magnetically shielding a charged particle lithography apparatus. The system comprises a first chamber, a second chamber (102) and a set of two coils (120a; 120b). The first chamber has walls comprising a magnetic shielding material, and, at least partially, encloses the charged particle lithography apparatus. The second chamber also has walls comprising a magnetic shielding material, and encloses the first chamber. The set of two coils is disposed in the second chamber on opposing sides of the first chamber. The two coils have a common axis.
H01J 37/147 - Dispositions pour diriger ou dévier la décharge le long d'une trajectoire déterminée
H01J 37/317 - Tubes à faisceau électronique ou ionique destinés aux traitements localisés d'objets pour modifier les propriétés des objets ou pour leur appliquer des revêtements en couche mince, p. ex. implantation d'ions
H01L 21/67 - Appareils spécialement adaptés pour la manipulation des dispositifs à semi-conducteurs ou des dispositifs électriques à l'état solide pendant leur fabrication ou leur traitementAppareils spécialement adaptés pour la manipulation des plaquettes pendant la fabrication ou le traitement des dispositifs à semi-conducteurs ou des dispositifs électriques à l'état solide ou de leurs composants
84.
LITHOGRAPHY SYSTEM AND METHOD OF PROCESSING SUBSTRATES IN SUCH A LITHOGRAPHY SYSTEM
The invention relates to a lithography system (300) comprising a plurality of lithography system units. Each lithography system unit comprises a lithography apparatus (301) arranged in a vacuum chamber for patterning a substrate; a load lock system (310) for transferring substrates into and out of the vacuum chamber; and a door for enabling entry into the vacuum chamber for servicing purposes. The load lock system and the door of each lithography system unit are provided at the same side and face a free area at a side of the lithography system, in particular the service area (305).
H01J 37/317 - Tubes à faisceau électronique ou ionique destinés aux traitements localisés d'objets pour modifier les propriétés des objets ou pour leur appliquer des revêtements en couche mince, p. ex. implantation d'ions
85.
CHARGED PARTICLE LITHOGRAPHY SYSTEM WITH APERTURE ARRAY COOLING
A charged particle lithography system for transferring a pattern onto the surface of a target, comprising a beam generator for generating a plurality of charged particle beamlets, the plurality of beamlets defining a column, and a plurality of aperture array elements comprising a first aperture array, a blanker array, a beam stop array, and a projection lens array. Each aperture array element comprises a plurality of apertures arranged in a plurality of groups, the apertures for letting the beamlets pass through the aperture array element, wherein the groups of apertures of each aperture array element form beam areas distinct and separate from a plurality of non-beam areas formed between the beam areas and containing no apertures for passage of the beamlets, and wherein the beam areas of the aperture array elements are aligned to form beam shafts, each comprising a plurality of beamlets, and the non-beam areas of the aperture array elements are aligned to form non-beam shafts not having beamlets present therein. The first aperture array element is provided with cooling channels adapted for transmission of a cooling medium for cooling the first aperture array element, the cooling channels being provided in the non-beam areas of the first aperture array element.
H01J 37/04 - Dispositions des électrodes et organes associés en vue de produire ou de commander la décharge, p. ex. dispositif électronoptique, dispositif ionoptique
H01J 37/22 - Dispositifs optiques ou photographiques associés au tube
H01J 37/317 - Tubes à faisceau électronique ou ionique destinés aux traitements localisés d'objets pour modifier les propriétés des objets ou pour leur appliquer des revêtements en couche mince, p. ex. implantation d'ions
H01J 37/09 - DiaphragmesÉcrans associés aux dispositifs électronoptiques ou ionoptiquesCompensation des champs perturbateurs
H01J 37/24 - Circuits non adaptés à une application particulière du tube et non prévus ailleurs
A maskless lithography system for exposing a target (121) according to pattern data (202). The system comprises an electron optical column (102) for generating a plurality of charged particle beamlets (132, 133) for exposing the target, the electron optical column including a beamlet blanker array (117) for modulating the beamlets, the beamlet blanker array including a plurality of receivers (150) for receiving beamlet data signals and a plurality of beamlet blanker elements (152) for modulating the beamlets in accordance with the data signals. The also comprises a data path (101) comprising a preprocessing system (140) for storing and processing the pattern data and a plurality of transmission channels (240) for transmitting the processed pattern data from the preprocessing system to the beamlet blanker elements. The data path further comprises a pattern streaming system (230) for receiving the pattern data and generating beamlet data signals, and first and second channel selectors (220, 320) connecting a subset of selected transmission channels among the transmission channels for transmitting the pattern data, wherein the first channel selector (220) is connected between the preprocessing system and the transmission channels and the second channel selector (320) is connected between the channels and the beamlet blanker elements.
H01J 37/22 - Dispositifs optiques ou photographiques associés au tube
H01J 37/244 - DétecteursComposants ou circuits associés
H01J 37/317 - Tubes à faisceau électronique ou ionique destinés aux traitements localisés d'objets pour modifier les propriétés des objets ou pour leur appliquer des revêtements en couche mince, p. ex. implantation d'ions
H01J 37/04 - Dispositions des électrodes et organes associés en vue de produire ou de commander la décharge, p. ex. dispositif électronoptique, dispositif ionoptique
H01J 37/304 - Commande des tubes par une information en provenance des objets, p. ex. signaux de correction
B82Y 10/00 - Nanotechnologie pour le traitement, le stockage ou la transmission d’informations, p. ex. calcul quantique ou logique à un électron
87.
METHOD FOR DETERMINING A DISTANCE BETWEEN TWO BEAMLETS IN A MULTI-BEAMLET EXPOSURE APPARATUS
The invention relates to a method for determining a distance between two charged particle beamlets in a multi -beamlet exposure apparatus. The apparatus is provided with a sensor comprising a converter element (1) for converting the energy of charged particles (2) into light (3) and a light sensitive detector (5). The converter element is provided with a sensor surface area provided with a two-dimensional pattern of beamlet blocking (8) and non-blocking regions (7). The method comprises scanning a first beamlet over the two-dimensional pattern, receiving light generated by the converter element in response to charged particles being part of the first beamlet transmitted through the two-dimensional pattern, and converting the received light into a first signal by means of the light sensitive detector. Then the two-dimensional pattern and the first beamlet are moved relatively with respect to each other over a predetermined distance. Subsequently, the method continues with scanning a second beamlet over the two- dimensional pattern, receiving light generated by the converter element in response to charged particles being part of the second beamlet transmitted through the two-dimensional pattern, and converting the received light into a second signal by means of the light sensitive detector. Finally, the distance between the first beamlet and second beamlet is determined based on the first signal, the second signal and the predetermined distance.
H01J 37/22 - Dispositifs optiques ou photographiques associés au tube
H01J 37/244 - DétecteursComposants ou circuits associés
H01J 37/317 - Tubes à faisceau électronique ou ionique destinés aux traitements localisés d'objets pour modifier les propriétés des objets ou pour leur appliquer des revêtements en couche mince, p. ex. implantation d'ions
H01J 37/04 - Dispositions des électrodes et organes associés en vue de produire ou de commander la décharge, p. ex. dispositif électronoptique, dispositif ionoptique
H01J 37/304 - Commande des tubes par une information en provenance des objets, p. ex. signaux de correction
88.
CHARGED PARTICLE LITHOGRAPHY SYSTEM WITH INTERMEDIATE CHAMBER
A charged particle lithography system for transferring a pattern onto the surface of a target, comprising a main vacuum chamber, a source chamber and an intermediate chamber, both located in the main vacuum chamber, a beam generator for generating a charged particle beam, the beam generator located in the source chamber, and a first aperture array element for generating a plurality of charged particle beamlets from the beam, the first aperture array element located in the intermediate chamber. The system is adapted for maintaining a first pressure in the main vacuum chamber, a second pressure in the intermediate chamber, and a third pressure in the source chamber, and wherein the first pressure is lower than an ambient pressure, the second pressure is lower than the first pressure, and the third pressure is lower than the second pressure.
H01J 37/09 - DiaphragmesÉcrans associés aux dispositifs électronoptiques ou ionoptiquesCompensation des champs perturbateurs
H01J 37/317 - Tubes à faisceau électronique ou ionique destinés aux traitements localisés d'objets pour modifier les propriétés des objets ou pour leur appliquer des revêtements en couche mince, p. ex. implantation d'ions
H01J 37/04 - Dispositions des électrodes et organes associés en vue de produire ou de commander la décharge, p. ex. dispositif électronoptique, dispositif ionoptique
The invention relates to a charged particle lithography system for transferring a pattern onto the surface of a target. The system comprises a beam generator, a beam stop array and a modulation device. The beam generator is arranged for generating a plurality of charged particle beamlets, the plurality of beamlets defining a column. The beam stop array has a surface for blocking beamlets from reaching the target surface and an array of apertures in the surface for allowing the beamlets to reach the target surface. The modulation device is arranged for modulating the beamlets to prevent one or more of the beamlets from reaching the target surface or allow one or more of the beamlets to reach the target surface, by deflecting or not deflecting the beamlets so that the beamlets are blocked or not blocked by the beam stop array. The modulation device comprises a plurality of apertures with associated modulators; and a plurality of light sensitive elements, both arranged in arrays. A surface area of the modulation device comprises an elongated beam area comprising an array of apertures and associated modulators, and a power interface area for accommodating a power arrangement for suitably powering elements within the modulation device. The power interface area being located alongside a long side of the elongated beam area and extending in a direction substantially parallel thereto.
H01J 37/04 - Dispositions des électrodes et organes associés en vue de produire ou de commander la décharge, p. ex. dispositif électronoptique, dispositif ionoptique
H01J 37/22 - Dispositifs optiques ou photographiques associés au tube
H01J 37/317 - Tubes à faisceau électronique ou ionique destinés aux traitements localisés d'objets pour modifier les propriétés des objets ou pour leur appliquer des revêtements en couche mince, p. ex. implantation d'ions
H01J 37/09 - DiaphragmesÉcrans associés aux dispositifs électronoptiques ou ionoptiquesCompensation des champs perturbateurs
H01J 37/24 - Circuits non adaptés à une application particulière du tube et non prévus ailleurs
Maskless lithography system comprising an EO column for generating charged particle beamlets for exposing a target. The column includes a beamlet blanker array including beamlet blanker elements for modulating the beamlets, and a data path comprising a preprocessing system for storing and processing the pattern data and transmission channels for transmitting the processed pattern data from the preprocessing system to the beamlet blanker elements, and a pattern streaming system for receiving the pattern data and generating data signals for modulating the beamlets. The system is configured for exposing a field on the target in two passes by allocating a first subset of the beamlets for exposing a first subset of the field during a first pass and a second subset of the beamlets for exposing a second subset of the field during a second pass. The data path comprises a first beam selector for selecting a first subset of the pattern data containing exposure data for the first subset of beamlets for the first scan and selecting a second subset of the pattern data containing exposure data for the second subset of beamlets for the second scan, and second beam selectors for connecting transmission channels assigned for transmitting the first subset of pattern data to a first subset of beamlet blanker elements for modulation of the first subset of beamlets, and connecting transmission channels assigned for transmitting the second subset of pattern data to a second subset of beamlet blanker elements for modulation of the second subset of beamlets.
H01J 37/22 - Dispositifs optiques ou photographiques associés au tube
H01J 37/244 - DétecteursComposants ou circuits associés
H01J 37/317 - Tubes à faisceau électronique ou ionique destinés aux traitements localisés d'objets pour modifier les propriétés des objets ou pour leur appliquer des revêtements en couche mince, p. ex. implantation d'ions
H01J 37/04 - Dispositions des électrodes et organes associés en vue de produire ou de commander la décharge, p. ex. dispositif électronoptique, dispositif ionoptique
H01J 37/304 - Commande des tubes par une information en provenance des objets, p. ex. signaux de correction
B82Y 10/00 - Nanotechnologie pour le traitement, le stockage ou la transmission d’informations, p. ex. calcul quantique ou logique à un électron
A charged particle lithography system for transferring a pattern onto the surface of a target, such as a wafer, comprising a charged particle source adapted for generating a diverging charged particle beam, a converging means for refracting said diverging charged particle beam, the converging means comprising a first electrode, and an aperture array element comprising a plurality of apertures, the aperture array element forming a second electrode, wherein the system is adapted for creating an electric field between the first electrode and the second electrode.
H01J 37/04 - Dispositions des électrodes et organes associés en vue de produire ou de commander la décharge, p. ex. dispositif électronoptique, dispositif ionoptique
H01J 37/22 - Dispositifs optiques ou photographiques associés au tube
H01J 37/317 - Tubes à faisceau électronique ou ionique destinés aux traitements localisés d'objets pour modifier les propriétés des objets ou pour leur appliquer des revêtements en couche mince, p. ex. implantation d'ions
H01J 37/09 - DiaphragmesÉcrans associés aux dispositifs électronoptiques ou ionoptiquesCompensation des champs perturbateurs
H01J 37/24 - Circuits non adaptés à une application particulière du tube et non prévus ailleurs
92.
LITHOGRAPHY SYSTEM, MODULATION DEVICE AND METHOD OF MANUFACTURING A FIBER FIXATION SUBSTRATE
A charged-particle multi-beamlet lithography system for transferring a pattern onto the surface of a target using a plurality of charged particle beamlets. The system comprises a beam generator for generating a plurality of charged particle beamlets, a beamlet blanker array for patterning the plurality of beamlets in accordance with a pattern, and a projection system for projecting the patterned beamlets onto the target surface. The beamlet blanker array comprises a plurality of modulators and a plurality of light sensitive elements, a light sensitive element being arranged to receive pattern data carrying light beams and to convert the light beams into electrical signals, the light sensitive element being electrically connected to one or more modulators for providing the received pattern data to the one or more modulators, and the beamlet blanker array is coupled to a fiber fixation substrate which accommodates the end sections of a plurality of fibers for providing the pattern data carrying light beams as an assembled group with a fixed connection.
H01J 37/04 - Dispositions des électrodes et organes associés en vue de produire ou de commander la décharge, p. ex. dispositif électronoptique, dispositif ionoptique
H01J 37/22 - Dispositifs optiques ou photographiques associés au tube
H01J 37/317 - Tubes à faisceau électronique ou ionique destinés aux traitements localisés d'objets pour modifier les propriétés des objets ou pour leur appliquer des revêtements en couche mince, p. ex. implantation d'ions
93.
MODULATION DEVICE AND CHARGED PARTICLE MULTI-BEAMLET LITHOGRAPHY SYSTEM USING THE SAME
The invention relates to a charged-particle multi-beamlet lithography system. The system comprises a beam generator for generating a plurality of beamlets, a beamlet blanker array for patterning the plurality of beamlets, an optical fiber arrangement, and a projection system. The beamlet blanker array comprises a substrate provided with a first area comprising one or more modulators and a second area free of modulators. The beamlet blanker array comprises one or more light sensitive elements, electrically connected to the one or more modulators, and arranged to receive light beams carrying pattern data. The optical fiber arrangement comprises a plurality of optical fibers for guiding the light beams carrying pattern data towards the one or more light sensitive elements. The projection of the optical fiber arrangement onto a surface of the beamlet blanker array in a direction perpendicular to the surface falls entirely within the second area.
H01J 37/04 - Dispositions des électrodes et organes associés en vue de produire ou de commander la décharge, p. ex. dispositif électronoptique, dispositif ionoptique
H01J 37/22 - Dispositifs optiques ou photographiques associés au tube
H01J 37/317 - Tubes à faisceau électronique ou ionique destinés aux traitements localisés d'objets pour modifier les propriétés des objets ou pour leur appliquer des revêtements en couche mince, p. ex. implantation d'ions
94.
LITHOGRAPHY SYSTEM ARRANGED ON A FOUNDATION, AND METHOD FOR ARRANGING A LITHOGRAPHY SYSTEM ON SAID FOUNDATION
The invention relates to a vibration isolation requiring system, such as a lithography system, arranged on a foundation (100), for example part of the floor in the room where the lithography system is arranged, and a method for arranging a lithography system on a foundation. The lithography system is arranged on top of a rigid or solid base plate (110), wherein said base plate having one or more struts (150) attached thereto for placing the lithography system onto the foundation, wherein the one or more strutsare arranged at a side of the base plate facing the foundation, and wherein the base plate is provided with a cut-out or an opening for mounting equipment (330) underneath a vacuum chamber of the lithography system.
F16F 15/04 - Suppression des vibrations dans les systèmes non rotatifs, p. ex. dans des systèmes alternatifsSuppression des vibrations dans les systèmes rotatifs par l'utilisation d'organes ne se déplaçant pas avec le système rotatif utilisant des moyens élastiques
95.
LITHOGRAPHY SYSTEM, SENSOR, CONVERTER ELEMENT AND METHOD OF MANUFACTURE
Charged particle beamlet lithography system for transferring a pattern to a surface of a target comprising a sensor for determining one or more characteristics of one or more charged particle beamlets. The sensor comprises a converter element (1) for receiving charged particles (22) and generating photons in response. The converter element comprises a surface for receiving one or more charged particle beamlets, the surface being provided with one or more cells for evaluating one or more individual beamlets. Each cell comprises a predetermined blocking pattern (18) of one or more charged particle blocking structures forming multiple knife edges at transitions between blocking and non-blocking regions along a predetermined beamlet scan trajectory over the converter element surface. The converter element surface is covered with a coating layer (20) substantially permeable for said charged particles and substantially impermeable for ambient light. An electrically conductive layer (21) is located between the coating layer and the blocking structures.
H01J 37/244 - DétecteursComposants ou circuits associés
H01J 37/317 - Tubes à faisceau électronique ou ionique destinés aux traitements localisés d'objets pour modifier les propriétés des objets ou pour leur appliquer des revêtements en couche mince, p. ex. implantation d'ions
H01J 37/304 - Commande des tubes par une information en provenance des objets, p. ex. signaux de correction
96.
SUBSTRATE SUPPORT STRUCTURE, CLAMP PREPARATION UNIT, AND LITHOGRAPHY SYSTEM
A substrate support structure (13) for clamping a substrate (12) on a surface (16) by means of a capillary layer of a liquid (11). The surface has an outer edge (28) and includes one or more substrate supporting elements (17) for receiving the substrate to be clamped, wherein the one or more substrate supporting elements are arranged to provide support for the substrate at a plurality of support locations. The substrate support structure further includes a sealing structure (21) circumscribing the surface and having a top surface or edge (22, 24, 26) forming a sealing rim. A distance (c) between the outer edge of the surface and an outermost of the support locations is greater than a distance (d) between the outer edge and the sealing rim.
H04L 21/00 - Appareils ou circuits locaux pour systèmes télégraphiques à imprimeur mosaïque
G03F 7/00 - Production par voie photomécanique, p. ex. photolithographique, de surfaces texturées, p. ex. surfaces impriméesMatériaux à cet effet, p. ex. comportant des photoréservesAppareillages spécialement adaptés à cet effet
H01L 21/67 - Appareils spécialement adaptés pour la manipulation des dispositifs à semi-conducteurs ou des dispositifs électriques à l'état solide pendant leur fabrication ou leur traitementAppareils spécialement adaptés pour la manipulation des plaquettes pendant la fabrication ou le traitement des dispositifs à semi-conducteurs ou des dispositifs électriques à l'état solide ou de leurs composants
H01J 37/317 - Tubes à faisceau électronique ou ionique destinés aux traitements localisés d'objets pour modifier les propriétés des objets ou pour leur appliquer des revêtements en couche mince, p. ex. implantation d'ions
G03B 27/58 - Platines, margeurs ou autres supports pour le matériau sensible
H01L 21/687 - Appareils spécialement adaptés pour la manipulation des dispositifs à semi-conducteurs ou des dispositifs électriques à l'état solide pendant leur fabrication ou leur traitementAppareils spécialement adaptés pour la manipulation des plaquettes pendant la fabrication ou le traitement des dispositifs à semi-conducteurs ou des dispositifs électriques à l'état solide ou de leurs composants pour le maintien ou la préhension en utilisant des moyens mécaniques, p. ex. mandrins, pièces de serrage, pinces
H01J 37/20 - Moyens de support ou de mise en position de l'objet ou du matériauMoyens de réglage de diaphragmes ou de lentilles associées au support
B82Y 10/00 - Nanotechnologie pour le traitement, le stockage ou la transmission d’informations, p. ex. calcul quantique ou logique à un électron
The invention relates to a charged particle based lithography system for projecting an image on a target using a plurality of charged particle beamlets for transferring said image to said target, said system comprising a charged particle column comprising: an electron optical subassembly comprising a charged particle source, a collimator lens, an aperture array, a blanking means and a beam stop for generating a plurality of charged particle beamlets; and a projector for projecting said plurality of charged particle beamlets on said target; said projector being moveably included in the system by means of at least one projector actuator for moving said projector relative to said electron optical subassembly; said projector actuator being included for mechanically actuating said projector and providing said projector with at least one degree of freedom of movement; wherein said degree of freedom relates to a movement around an optical axis of the system.
H01J 37/317 - Tubes à faisceau électronique ou ionique destinés aux traitements localisés d'objets pour modifier les propriétés des objets ou pour leur appliquer des revêtements en couche mince, p. ex. implantation d'ions
H01J 37/20 - Moyens de support ou de mise en position de l'objet ou du matériauMoyens de réglage de diaphragmes ou de lentilles associées au support
An integrated sensor system for a lithography machine, the system comprising a projection lens system (132) for focusing one or more exposure beams onto a target, a moveable table (134) for carrying the target (9), a capacitive sensing system (300) for making a measurement related to a distance between a final focusing element of the projection lens system (104) and a surface of the target (9), and a control unit (400) for controlling movement of the moveable table (134) to adjust a position of the target (9) based at least in part on a signal from the capacitive sensing system. The capacitive sensing system (300) comprises a plurality of capacitive sensors (30), each comprising a thin film structure. The capacitive sensors and the final focusing element (104) of the projection lens system are mounted directly to a common base (112), and the sensors are located in close proximity to an edge of the final focusing element of the projection lens system.
G03F 9/00 - Mise en registre ou positionnement d'originaux, de masques, de trames, de feuilles photographiques, de surfaces texturées, p. ex. automatique
G01B 7/02 - Dispositions pour la mesure caractérisées par l'utilisation de techniques électriques ou magnétiques pour mesurer la longueur, la largeur ou l'épaisseur
G01D 5/24 - Moyens mécaniques pour le transfert de la grandeur de sortie d'un organe sensibleMoyens pour convertir la grandeur de sortie d'un organe sensible en une autre variable, lorsque la forme ou la nature de l'organe sensible n'imposent pas un moyen de conversion déterminéTransducteurs non spécialement adaptés à une variable particulière utilisant des moyens électriques ou magnétiques influençant la valeur d'un courant ou d'une tension en faisant varier la capacité
A capacitive sensing system, comprising a sensor (30) having thin film structure, the thin film structure comprising a sensor having a first insulating layer (34) and a first conductive film comprising a sensing electrode (31) formed on a first surface of the first insulating layer (34) and a second conductive film comprising a back guard electrode (35). The back guard electrode may be formed in a single plane and comprise a peripheral portion in the same plane, and is disposed on a second surface of the first insulating layer (34) and a first surface of a second insulating layer (43) or protective layer (38). The peripheral portion of the back guard electrode may extend beyond the sensing electrode (31) to form a side guard electrode which substantially or completely surrounds the sensing electrode.
G01B 7/02 - Dispositions pour la mesure caractérisées par l'utilisation de techniques électriques ou magnétiques pour mesurer la longueur, la largeur ou l'épaisseur
G01D 5/24 - Moyens mécaniques pour le transfert de la grandeur de sortie d'un organe sensibleMoyens pour convertir la grandeur de sortie d'un organe sensible en une autre variable, lorsque la forme ou la nature de l'organe sensible n'imposent pas un moyen de conversion déterminéTransducteurs non spécialement adaptés à une variable particulière utilisant des moyens électriques ou magnétiques influençant la valeur d'un courant ou d'une tension en faisant varier la capacité
A capacitive sensing system comprising two or more capacitive sensors (30a, 30b), one or more AC power sources (306a, 306b) for energizing the capacitive sensors, and a signal processing circuit for processing signals from the sensors. The sensors are arranged in pairs, wherein the one or more AC power sources are arranged to energize a first sensor of a pair of the sensors with an alternating current (307) or voltage 180 degrees out of phase to a current or voltage for a second sensor of the pair of sensors, and wherein a pair of the sensors provides a measuring unit for a single measured distance value, the signal processing circuit receiving an output signal from each sensor of the pair and generating a measured value related to the average distance between the sensors of the pair and the target (9).
G01B 7/02 - Dispositions pour la mesure caractérisées par l'utilisation de techniques électriques ou magnétiques pour mesurer la longueur, la largeur ou l'épaisseur
G01D 5/24 - Moyens mécaniques pour le transfert de la grandeur de sortie d'un organe sensibleMoyens pour convertir la grandeur de sortie d'un organe sensible en une autre variable, lorsque la forme ou la nature de l'organe sensible n'imposent pas un moyen de conversion déterminéTransducteurs non spécialement adaptés à une variable particulière utilisant des moyens électriques ou magnétiques influençant la valeur d'un courant ou d'une tension en faisant varier la capacité
H03K 17/955 - Commutateurs de proximité utilisant un détecteur capacitif
brevets
