Abrégé

A light source module is provided. The light source module includes a substrate for the product, a plurality of first light sources and a plurality of second light sources. The first light sources are disposed on the substrate for the product, wherein the first light sources provide a first light beam, and the first light beam has a first chromaticity. The second light sources are disposed on the substrate for the product, wherein the second light sources provide a second light beam, the second light beam has a second chromaticity, and there is a chromaticity difference (Rx, Ry) between the first chromaticity and the second chromaticity.

Classes IPC  ?

• F21V 19/00 - Montage des sources lumineuses ou des supports de sources lumineuses sur ou dans les dispositifs d'éclairage
• F21Y 105/16 - Sources lumineuses planes comprenant un réseau bidimensionnel d’éléments générateurs de lumière ponctuelle caractérisées par la forme d’ensemble du réseau bidimensionnel carrée ou rectangulaire, p. ex. pour les panneaux de lumière
• F21Y 113/13 - Combinaison de sources lumineuses de couleurs différentes comprenant un ensemble de sources lumineuses ponctuelles
• F21Y 115/10 - Diodes électroluminescentes [LED]

Abrégé

A method of manufacturing a light-emitting unit includes disposing a plurality of light-emitting diode (LED) chips on a carrier, wherein gaps are between the LED chips. The method includes forming a film on the LED chips and the carrier, and transferring at least one of the LED chips onto a first substrate, wherein the film is disconnected in the gaps adjacent to the at least one LED chip during the transferring the at least one of the LED chips onto the first substrate.

Classes IPC  ?

• H01L 21/683 - Appareils spécialement adaptés pour la manipulation des dispositifs à semi-conducteurs ou des dispositifs électriques à l'état solide pendant leur fabrication ou leur traitementAppareils spécialement adaptés pour la manipulation des plaquettes pendant la fabrication ou le traitement des dispositifs à semi-conducteurs ou des dispositifs électriques à l'état solide ou de leurs composants pour le maintien ou la préhension
• H01L 25/075 - Ensembles consistant en une pluralité de dispositifs à semi-conducteurs ou d'autres dispositifs à l'état solide les dispositifs étant tous d'un type prévu dans une seule des sous-classes , , , , ou , p. ex. ensembles de diodes redresseuses les dispositifs n'ayant pas de conteneurs séparés les dispositifs étant d'un type prévu dans le groupe
• H10H 20/01 - Fabrication ou traitement
• H10H 20/851 - Moyens de conversion de la longueur d’onde
• H10H 20/857 - Interconnexions, p. ex. grilles de connexion, fils de connexion ou billes de soudure

Abrégé

A light emitting diode device includes a driving chip, a first insulating layer, a second insulating layer, a first redistribution layer, a second redistribution layer, a plurality of light emitting diodes, and an encapsulating layer. The first insulating layer covers the driving chip. The second insulating layer is disposed under the first insulating layer. The first redistribution layer is disposed on the first insulating layer and electrically connects to the driving chip. The second redistribution layer is disposed between the first insulating layer and the second insulating layer and electrically connected to the first redistribution layer. The plurality of light emitting diodes is bonded to the first redistribution layer. The encapsulating layer covers the first redistribution layer and the plurality of light emitting diodes.

Classes IPC  ?

• H10H 20/857 - Interconnexions, p. ex. grilles de connexion, fils de connexion ou billes de soudure
• H01L 25/16 - Ensembles consistant en une pluralité de dispositifs à semi-conducteurs ou d'autres dispositifs à l'état solide les dispositifs étant de types couverts par plusieurs des sous-classes , , , , ou , p. ex. circuit hybrides
• H10H 20/814 - Corps ayant des moyens réfléchissants, p. ex. des réflecteurs de Bragg en semi-conducteurs
• H10H 20/82 - Surfaces rugueuses, p. ex. à l’interface entre les couches épitaxiales
• H10H 20/853 - Encapsulations caractérisées par leur forme

Abrégé

The disclosure provides a light emitting diode structure, including a substrate, a first semiconductor layer, a light emitting layer, a second semiconductor layer, a semiconductor contacting layer, a first conductive layer and a second conductive layer. The first semiconductor layer is disposed on the substrate. The first semiconductor includes a first thickness structure and a second thickness structure, in which the first thickness structure is thicker than the second thickness structure. The light emitting layer is disposed on the first thickness structure. The second semiconductor layer is disposed on the light emitting layer The semiconductor contacting layer is disposed on the second thickness structure, in which the vertical projections of the semiconductor contacting layer and the light emitting layer on the substrate don't overlap nor contact. A doping type of the semiconductor contacting layer is the same as the first semiconductor layer.

Classes IPC  ?

• H10H 20/857 - Interconnexions, p. ex. grilles de connexion, fils de connexion ou billes de soudure
• H10H 20/825 - Matériaux des régions électroluminescentes comprenant uniquement des matériaux du groupe III-V, p. ex. GaP contenant de l’azote, p. ex. GaN

Abrégé

A semiconductor device includes a circuit substrate, a light-emitting layer, a structure, and a light-emitting diode chip. The light-emitting layer is located on the circuit substrate and emits a first color light with a first wavelength range. The structure is disposed between the light-emitting layer and the circuit substrate. The structure emits a second color light with a second wavelength range. The light-emitting diode chip is located on the circuit substrate without overlapping the structure in a vertical direction. The light-emitting diode chip emits a third color light with a third wavelength range. The first wavelength range is between the second wavelength range and the third wavelength range.

Classes IPC  ?

• H01L 25/075 - Ensembles consistant en une pluralité de dispositifs à semi-conducteurs ou d'autres dispositifs à l'état solide les dispositifs étant tous d'un type prévu dans une seule des sous-classes , , , , ou , p. ex. ensembles de diodes redresseuses les dispositifs n'ayant pas de conteneurs séparés les dispositifs étant d'un type prévu dans le groupe
• H01L 25/16 - Ensembles consistant en une pluralité de dispositifs à semi-conducteurs ou d'autres dispositifs à l'état solide les dispositifs étant de types couverts par plusieurs des sous-classes , , , , ou , p. ex. circuit hybrides
• H10D 86/40 - Dispositifs intégrés formés dans ou sur des substrats isolants ou conducteurs, p. ex. formés dans des substrats de silicium sur isolant [SOI] ou sur des substrats en acier inoxydable ou en verre caractérisés par de multiples transistors en couches minces [TFT]
• H10D 86/60 - Dispositifs intégrés formés dans ou sur des substrats isolants ou conducteurs, p. ex. formés dans des substrats de silicium sur isolant [SOI] ou sur des substrats en acier inoxydable ou en verre caractérisés par de multiples transistors en couches minces [TFT] les transistors TFT étant dans des matrices actives
• H10H 20/814 - Corps ayant des moyens réfléchissants, p. ex. des réflecteurs de Bragg en semi-conducteurs
• H10H 20/857 - Interconnexions, p. ex. grilles de connexion, fils de connexion ou billes de soudure

Abrégé

A method for forming a pixel package is provided. The method for forming the pixel package includes the following steps: providing a first substrate; transferring a first LED chip and a second LED chip to the first substrate; forming a composite laminate between the first LED chip and the second LED chip; adhering a second substrate to a top surface of the composite laminate; removing the first substrate from back sides of the first LED chip, the second LED chip, and the composite laminate; forming a redistribution layer on the back sides of the first LED chip, the second LED chip, and the composite laminate; and removing the second substrate from the top surface of the composite laminate.

Classes IPC  ?

• H01L 25/16 - Ensembles consistant en une pluralité de dispositifs à semi-conducteurs ou d'autres dispositifs à l'état solide les dispositifs étant de types couverts par plusieurs des sous-classes , , , , ou , p. ex. circuit hybrides
• H01L 23/00 - Détails de dispositifs à semi-conducteurs ou d'autres dispositifs à l'état solide
• H10H 20/01 - Fabrication ou traitement
• H10H 20/851 - Moyens de conversion de la longueur d’onde
• H10H 20/852 - Encapsulations
• H10H 20/856 - Moyens réfléchissants
• H10H 20/857 - Interconnexions, p. ex. grilles de connexion, fils de connexion ou billes de soudure

Abrégé

A light emitting diode (LED) package includes a substrate, at least one micro LED chip, a black material layer, and a transparent material layer. The substrate has a width ranging from 100 micrometers to 1000 micrometers. The at least one micro LED chip is electrically mounted on a top surface of the substrate and has a width ranging from 1 micrometer to 100 micrometers. The black material layer covers the top surface of the substrate to expose the at least one micro LED chip. The transparent material layer covers the at least one micro LED chip and the black material layer.

Classes IPC  ?

• H10H 20/85 - Enveloppes
• H01L 21/02 - Fabrication ou traitement des dispositifs à semi-conducteurs ou de leurs parties constitutives
• H10D 62/10 - Formes, dimensions relatives ou dispositions des régions des corps semi-conducteursFormes des corps semi-conducteurs
• H10H 20/852 - Encapsulations

Abrégé

A light-emitting element includes a first reflection layer having a first reflectance; a second reflection layer having a second reflectance greater than the first reflectance; a first opening in the second reflection layer; a multi-layer light-emitting structure disposed between the first reflection layer and the second reflection layer; a light-transmitting semiconductor layer disposed on the first reflection layer and having an upper light-extracting surface, wherein the first reflection layer is closer to the upper light-extracting surface than the second reflection layer; and a first conductive pad disposed in the first opening, electrically connected to the multi-layer light-emitting structure; wherein the first reflection layer includes a Bragg reflector containing semiconductor material.

Classes IPC  ?

• H10H 20/80 - Détails de structure
• H10H 20/814 - Corps ayant des moyens réfléchissants, p. ex. des réflecteurs de Bragg en semi-conducteurs
• H10H 20/819 - Corps caractérisés par leur forme particulière, p. ex. substrats incurvés ou tronqués

Abrégé

A detection device includes a substrate, a light-emitter, and a light receiver. The substrate includes a first surface area and a second surface area, in which the first surface area has a first reflectance greater than a second reflectance of the second surface area. The light emitter is disposed on the first surface area, and the light receiver is disposed on the second surface area. The light receiver has a third reflectance which is substantially the same as the second reflectance of the second surface area.

Classes IPC  ?

• H10F 55/255 - Dispositifs à semi-conducteurs sensibles au rayonnement couverts par les groupes , ou structurellement associés à des sources lumineuses électriques et électriquement ou optiquement couplés avec lesdites sources dans lesquels la source lumineuse électrique commande les dispositifs à semi-conducteurs sensibles au rayonnement, p. ex. optocoupleurs dans lesquels les dispositifs sensibles au rayonnement et la source lumineuse électrique sont tous des dispositifs à semi-conducteurs formés dans ou sur un même substrat
• A61B 5/00 - Mesure servant à établir un diagnostic Identification des individus
• A61B 5/1455 - Mesure des caractéristiques du sang in vivo, p. ex. de la concentration des gaz dans le sang ou de la valeur du pH du sang en utilisant des capteurs optiques, p. ex. des oxymètres à photométrie spectrale
• H10F 77/00 - Détails de structure des dispositifs couverts par la présente sous-classe
• H10F 77/40 - Éléments ou dispositions optiques
• H10F 77/50 - Encapsulations ou conteneurs

Abrégé

A semiconductor chip includes a semiconductor stack, a passivation layer, a first electrode and a second electrode. The semiconductor stack includes a top surface, a bottom surface opposite to the top surface, and a sidewall between the top surface and the bottom surface. The passivation layer covers the sidewall of the semiconductor stack. The first electrode and the second electrode are respectively located on the top surface and the bottom surface of the semiconductor stack. When viewing from the bottom surface, a plan-view contour of the passivation layer surrounds a plan-view contour of the semiconductor stack and includes a plurality of protruding portions protrude outwards from the plan-view contour of the passivation layer.

Classes IPC  ?

• H10H 20/831 - Électrodes caractérisées par leur forme
• H10H 20/85 - Enveloppes
• H10H 20/857 - Interconnexions, p. ex. grilles de connexion, fils de connexion ou billes de soudure

Abrégé

An electronic device includes an electronic component module coupled to a substrate. The electronic component module includes a sub-mount, which includes a body having a top surface, a bottom surface, and a supporting surface. The supporting surface is located between the supporting surface and the bottom surface. A first conductive layer is disposed on the bottom surface and includes first conductive lines. A second conductive layer is disposed on the supporting surface, extending to the top surface, and includes second conductive lines. The second conductive lines on the supporting surface have a first pin layout, and the second conductive lines on the top surface have a second pin layout different from the first pin layout. The second pin layout matches the pin layout of first conductive lines on the bottom surface. An electronic component is coupled to the second conductive lines on the supporting surface.

Classes IPC  ?

• H05K 1/18 - Circuits imprimés associés structurellement à des composants électriques non imprimés
• H05K 1/11 - Éléments imprimés pour réaliser des connexions électriques avec ou entre des circuits imprimés

Abrégé

A light emitting element package includes a first substrate, at least one light emitting element, an encapsulation layer, and a plurality of conductive pads. The first substrate has an upper surface and a lower surface opposite to each other, in which an edge of the lower surface has a notch. The at least one light emitting element is disposed on the upper surface of the first substrate, in which the light emitting element has a positive electrode and a negative electrode. The encapsulation layer covers the light emitting element. The plurality of conductive pads are disposed on the lower surface of the first substrate and electrically connected to the positive electrode and the negative electrode of the light emitting element, respectively.

Classes IPC  ?

• H01L 33/62 - Dispositions pour conduire le courant électrique vers le corps semi-conducteur ou depuis celui-ci, p.ex. grille de connexion, fil de connexion ou billes de soudure
• H01L 27/15 - Dispositifs consistant en une pluralité de composants semi-conducteurs ou d'autres composants à l'état solide formés dans ou sur un substrat commun comprenant des composants semi-conducteurs avec au moins une barrière de potentiel ou une barrière de surface, spécialement adaptés pour l'émission de lumière
• H01L 33/00 - DISPOSITIFS À SEMI-CONDUCTEURS NON COUVERTS PAR LA CLASSE - Détails
• H01L 33/54 - Encapsulations ayant une forme particulière

Abrégé

An isotopic polymer includes a silicone resin, an aromatic polymer, a modified silicone resin, a halogenated polysilane, an epoxy resin, or a combination thereof, wherein at least part of 12C, 1H and/or 16O in the isotopic polymer is replaced with 14C, 3H and/or 15O. The decaying age of the isotopic polymer is less than 50,000 years.

Classes IPC  ?

• C07B 59/00 - Introduction d'isotopes d'éléments dans les composés organiques
• C08L 63/00 - Compositions contenant des résines époxyCompositions contenant des dérivés des résines époxy
• C08L 83/08 - Polysiloxanes contenant du silicium lié à des groupes organiques contenant des atomes, autres que le carbone, l'hydrogène et l'oxygène
• H01L 25/075 - Ensembles consistant en une pluralité de dispositifs à semi-conducteurs ou d'autres dispositifs à l'état solide les dispositifs étant tous d'un type prévu dans une seule des sous-classes , , , , ou , p. ex. ensembles de diodes redresseuses les dispositifs n'ayant pas de conteneurs séparés les dispositifs étant d'un type prévu dans le groupe
• H01L 33/50 - DISPOSITIFS À SEMI-CONDUCTEURS NON COUVERTS PAR LA CLASSE - Détails caractérisés par les éléments du boîtier des corps semi-conducteurs Éléments de conversion de la longueur d'onde
• H01L 33/56 - Matériaux, p.ex. résine époxy ou silicone
• H01L 33/58 - DISPOSITIFS À SEMI-CONDUCTEURS NON COUVERTS PAR LA CLASSE - Détails caractérisés par les éléments du boîtier des corps semi-conducteurs Éléments de mise en forme du champ optique
• H01L 33/62 - Dispositions pour conduire le courant électrique vers le corps semi-conducteur ou depuis celui-ci, p.ex. grille de connexion, fil de connexion ou billes de soudure

Abrégé

A light-emitting element includes light-emitting diode (LED) chip with a first and second surface opposite to each other, and sidewalls connecting the first and second surface. The light-emitting element further includes an insulation structure covering the first surface, the second surface, and the sidewalls. The light-emitting element further includes multiple connection pads disposed on the first surface. In a cross-sectional view, the insulation layer includes a plurality of protrusion portions disposed on the sidewalls. Each of the protrusion portions protrudes from the sidewalls and extends laterally with a protrusion length. The protrusion length of one of the plurality of protrusion portions is different from that of another one of the plurality of protrusion portions.

Classes IPC  ?

• H01L 33/54 - Encapsulations ayant une forme particulière
• H01L 25/075 - Ensembles consistant en une pluralité de dispositifs à semi-conducteurs ou d'autres dispositifs à l'état solide les dispositifs étant tous d'un type prévu dans une seule des sous-classes , , , , ou , p. ex. ensembles de diodes redresseuses les dispositifs n'ayant pas de conteneurs séparés les dispositifs étant d'un type prévu dans le groupe
• H01L 25/16 - Ensembles consistant en une pluralité de dispositifs à semi-conducteurs ou d'autres dispositifs à l'état solide les dispositifs étant de types couverts par plusieurs des sous-classes , , , , ou , p. ex. circuit hybrides
• H01L 33/00 - DISPOSITIFS À SEMI-CONDUCTEURS NON COUVERTS PAR LA CLASSE - Détails

Abrégé

An electrical module is provided. The electrical module includes a circuit board. The circuit board includes at least one bonding pad. The bonding pad includes a bonding line and a plurality of traces. The traces are connected to the bonding line. The traces are configured in a radial manner. The bonding line includes a first section and a second section. The first section is connected to the second section. The first section extends in a first direction. The second section extends in a second direction. The first direction is perpendicular to the second direction. An extending direction of at least one of the traces differs from the first direction and the second direction.

Classes IPC  ?

• H05K 1/11 - Éléments imprimés pour réaliser des connexions électriques avec ou entre des circuits imprimés
• H01L 23/544 - Marques appliquées sur le dispositif semi-conducteur, p. ex. marques de repérage, schémas de test
• H01L 25/075 - Ensembles consistant en une pluralité de dispositifs à semi-conducteurs ou d'autres dispositifs à l'état solide les dispositifs étant tous d'un type prévu dans une seule des sous-classes , , , , ou , p. ex. ensembles de diodes redresseuses les dispositifs n'ayant pas de conteneurs séparés les dispositifs étant d'un type prévu dans le groupe

Abrégé

A composite encapsulation material is provided, which includes (A) a polymer glue material and (B) a viscosity modifier. The viscosity modifier (B) has a functional group capable of forming non-covalent interaction with the polymer glue material (A). At room temperature, the ratio (log(η0)/log(η28 )) of the logarithm of the viscosity ((log(η0)) of the composite encapsulation material at the shear rate of 1×10−3 s−1 to the logarithm of the viscosity (log(η∞)) of the composite encapsulation material at the shear rate of 1×102 s−1 is 1.1-2.5.

Classes IPC  ?

• H01L 33/56 - Matériaux, p.ex. résine époxy ou silicone
• C08K 3/22 - OxydesHydroxydes de métaux
• C08K 3/36 - Silice
• C09K 11/02 - Emploi de substances particulières comme liants, revêtements de particules ou milieux de suspension
• H01L 33/58 - DISPOSITIFS À SEMI-CONDUCTEURS NON COUVERTS PAR LA CLASSE - Détails caractérisés par les éléments du boîtier des corps semi-conducteurs Éléments de mise en forme du champ optique

Abrégé

A photosensitive device is provided. The photosensitive device includes a sensing stack, an anti-reflective layer, an optical filter, a first electrode, and a second electrode. The sensing stack includes a first semiconductor layer, an intrinsic semiconductor layer disposed on the first semiconductor layer, and a second semiconductor layer disposed on the intrinsic semiconductor layer. The anti-reflective layer is disposed on a side of the sensing stack. The optical filter is disposed on the anti-reflective layer and blocks input light with an incident angle greater than 50 degrees. The first electrode and the second electrode are disposed on the sensing stack.

Classes IPC  ?

• A61B 5/00 - Mesure servant à établir un diagnostic Identification des individus
• G01J 3/26 - Production du spectreMonochromateurs en utilisant une réflexion multiple, p. ex. interféromètre de Fabry-Perot, filtre à interférences variables
• G02B 5/22 - Filtres absorbants
• G02B 5/28 - Filtres d'interférence
• H10F 30/223 - Dispositifs individuels à semi-conducteurs sensibles au rayonnement dans lesquels le rayonnement commande le flux de courant à travers les dispositifs, p. ex. photodétecteurs les dispositifs ayant des barrières de potentiel, p. ex. phototransistors les dispositifs étant sensibles au rayonnement infrarouge, visible ou ultraviolet les dispositifs ayant une seule barrière de potentiel, p. ex. photodiodes la barrière de potentiel étant du type PIN
• H10F 55/20 - Dispositifs à semi-conducteurs sensibles au rayonnement couverts par les groupes , ou structurellement associés à des sources lumineuses électriques et électriquement ou optiquement couplés avec lesdites sources dans lesquels la source lumineuse électrique commande les dispositifs à semi-conducteurs sensibles au rayonnement, p. ex. optocoupleurs
• H10F 77/20 - Électrodes
• H10F 77/30 - Revêtements
• H10F 77/40 - Éléments ou dispositions optiques

Abrégé

A light-emitting diode (LED) display device, includes: a plurality of displaying basic-units, each of the displaying basic-units having a plurality of sub-pixel regions, on which a plurality of red LED units, a plurality of green LED units, a plurality of blue LED units, and a plurality of white LED units are selectively provided; and a control unit, performing an image reconstruction process for an input image, thereby making each of the displaying basic-units display color, color grayscale, or black-and-white grayscale; wherein in each of the displaying basic-units, the quantity of green LED units is more than or equal to the quantity of white LED units, and the quantity of green LED units is more than the quantity of blue LED units or red LED units.

Classes IPC  ?

• G09G 3/32 - Dispositions ou circuits de commande présentant un intérêt uniquement pour l'affichage utilisant des moyens de visualisation autres que les tubes à rayons cathodiques pour la présentation d'un ensemble de plusieurs caractères, p. ex. d'une page, en composant l'ensemble par combinaison d'éléments individuels disposés en matrice utilisant des sources lumineuses commandées utilisant des panneaux électroluminescents semi-conducteurs, p. ex. utilisant des diodes électroluminescentes [LED]

Abrégé

The disclosure relates to a quantum dot structure. The quantum dot structure includes a quantum dot and a cloud-like shell covering a portion of the quantum dot and having an irregular outer surface. The quantum dot includes: a core; a first shell discontinuously around a core surface of the core; and a second shell between the core and the first shell and encapsulating the core surface of the core, wherein the second shell has an irregular outer surface.

Classes IPC  ?

• C09K 11/88 - Substances luminescentes, p. ex. électroluminescentes, chimiluminescentes contenant des substances inorganiques luminescentes contenant du sélénium, du tellure ou des chalcogènes non spécifiés
• C09K 11/02 - Emploi de substances particulières comme liants, revêtements de particules ou milieux de suspension
• H01L 33/50 - DISPOSITIFS À SEMI-CONDUCTEURS NON COUVERTS PAR LA CLASSE - Détails caractérisés par les éléments du boîtier des corps semi-conducteurs Éléments de conversion de la longueur d'onde

Abrégé

A light-emitting device is provided. The light-emitting device includes a light-emitting unit and a light-conversion structure disposed on the light-emitting unit, wherein the light-conversion structure includes a quantum dot layer and an etching blocking layer disposed on one of the surfaces of the quantum dot layer.

Classes IPC  ?

• H01L 33/50 - DISPOSITIFS À SEMI-CONDUCTEURS NON COUVERTS PAR LA CLASSE - Détails caractérisés par les éléments du boîtier des corps semi-conducteurs Éléments de conversion de la longueur d'onde
• H01L 25/075 - Ensembles consistant en une pluralité de dispositifs à semi-conducteurs ou d'autres dispositifs à l'état solide les dispositifs étant tous d'un type prévu dans une seule des sous-classes , , , , ou , p. ex. ensembles de diodes redresseuses les dispositifs n'ayant pas de conteneurs séparés les dispositifs étant d'un type prévu dans le groupe

Abrégé

A quantum dot composite structure and a method for forming the same are provided. The quantum dot composite structure includes: a glass particle including a glass matrix and a plurality of quantum dots located in the glass matrix, wherein at least one of the plurality of quantum dots includes an exposed surface in the glass matrix; and an inorganic protective layer disposed on the glass particle and covering the exposed surface.

Classes IPC  ?

• C03C 14/00 - Compositions de verre contenant un constituant non vitreux, p. ex. compositions contenant des fibres, filaments, trichites, paillettes ou similaires, dispersés dans une matrice de verre
• C03B 19/10 - Fabrication des perles
• C03C 4/12 - Compositions pour verres ayant des propriétés particulières pour verre luminescentCompositions pour verres ayant des propriétés particulières pour verre fluorescent
• C03C 12/00 - Poudre de verreCompositions pour billes en verre
• C03C 17/245 - Oxydes par dépôt à partir d'une phase vapeur
• C03C 17/25 - Oxydes par dépôt à partir d'une phase liquide
• C03C 17/34 - Traitement de surface du verre, p. ex. du verre dévitrifié, autre que sous forme de fibres ou de filaments, par revêtement avec au moins deux revêtements ayant des compositions différentes
• C23C 16/40 - Oxydes
• C23C 16/44 - Revêtement chimique par décomposition de composés gazeux, ne laissant pas de produits de réaction du matériau de la surface dans le revêtement, c.-à-d. procédés de dépôt chimique en phase vapeur [CVD] caractérisé par le procédé de revêtement
• C23C 16/455 - Revêtement chimique par décomposition de composés gazeux, ne laissant pas de produits de réaction du matériau de la surface dans le revêtement, c.-à-d. procédés de dépôt chimique en phase vapeur [CVD] caractérisé par le procédé de revêtement caractérisé par le procédé utilisé pour introduire des gaz dans la chambre de réaction ou pour modifier les écoulements de gaz dans la chambre de réaction

Abrégé

A pixel unit includes a red LED chip, a green LED chip, and a blue LED chip. Each of these chips has an optical density concentration zone and a reference line passing through the geometric center of the top-view shape of the chip. The optical density concentration zone of each of these chips is deviated to one side of the respective reference line of the chip. The reference lines of the chips are parallel to each other. The optical density concentration zones of the chips are all deviated to the same side of the respective reference line.

Classes IPC  ?

• H01L 25/075 - Ensembles consistant en une pluralité de dispositifs à semi-conducteurs ou d'autres dispositifs à l'état solide les dispositifs étant tous d'un type prévu dans une seule des sous-classes , , , , ou , p. ex. ensembles de diodes redresseuses les dispositifs n'ayant pas de conteneurs séparés les dispositifs étant d'un type prévu dans le groupe

Abrégé

A package structure is provided. The package structure includes a substrate, a frame structure, and a lens portion. The frame structure is disposed on the substrate. A sidewall of the frame structure has multiple lamination traces thereon. The lens portion covers the substrate. The frame structure has a through hole passing through the sidewall, and the through hole includes an edge, and a portion of the lamination traces overlaps the edge of the through hole.

Classes IPC  ?

• H01S 5/0232 - Cadres conducteurs
• H01S 5/02253 - Découplage de lumière utilisant des lentilles
• H01S 5/028 - Revêtements
• H01S 5/024 - Dispositions pour la gestion thermique

Abrégé

A light emitting module is provided. The light emitting module includes a substrate, light emitting elements, an encapsulant material and dimming structures. The light emitting elements are disposed over the substrate. The encapsulant material covers the light emitting elements and the substrate, and the encapsulant material has an encapsulant height H. The dimming structures are disposed over the encapsulant material or embedded in the encapsulant material. The dimming structures have a maximum dimming thickness h. The encapsulant thickness H and the maximum dimming thickness h satisfy the following relationship: 0.01≤h/H≤1.

Classes IPC  ?

• H01L 33/54 - Encapsulations ayant une forme particulière
• H01L 25/075 - Ensembles consistant en une pluralité de dispositifs à semi-conducteurs ou d'autres dispositifs à l'état solide les dispositifs étant tous d'un type prévu dans une seule des sous-classes , , , , ou , p. ex. ensembles de diodes redresseuses les dispositifs n'ayant pas de conteneurs séparés les dispositifs étant d'un type prévu dans le groupe
• H01L 33/60 - DISPOSITIFS À SEMI-CONDUCTEURS NON COUVERTS PAR LA CLASSE - Détails caractérisés par les éléments du boîtier des corps semi-conducteurs Éléments de mise en forme du champ optique Éléments réfléchissants

Abrégé

A quantum dot is disclosed. The quantum dot includes: a core, a first shell, and a second shell. The first shell is discontinuously distributed around the core surface. The second shell is between the core and the first shell and encapsulates the core. The second shell has an irregularly shaped outer surface.

Classes IPC  ?

• C09K 11/02 - Emploi de substances particulières comme liants, revêtements de particules ou milieux de suspension
• C09K 11/88 - Substances luminescentes, p. ex. électroluminescentes, chimiluminescentes contenant des substances inorganiques luminescentes contenant du sélénium, du tellure ou des chalcogènes non spécifiés
• H01L 33/50 - DISPOSITIFS À SEMI-CONDUCTEURS NON COUVERTS PAR LA CLASSE - Détails caractérisés par les éléments du boîtier des corps semi-conducteurs Éléments de conversion de la longueur d'onde

Abrégé

An inorganic light-emitting device is provided. The inorganic light-emitting device includes a carrier; a plurality of green chips, a plurality of red chips, and a plurality of blue chips periodically arranged on the carrier. The number of green chips is greater than the number of red chips, and the number of green chips is greater than the number of blue chips. A minimum distance Psub_g between adjacent ones of the green chips is smaller than a minimum distance Psub_r between adjacent ones of the red chips in a first direction D1, and the minimum distance Psub_g between adjacent ones of the green chips is smaller than a minimum distance Psub_b between adjacent ones of the blue chips in the first direction D1.

Classes IPC  ?

• H01L 25/075 - Ensembles consistant en une pluralité de dispositifs à semi-conducteurs ou d'autres dispositifs à l'état solide les dispositifs étant tous d'un type prévu dans une seule des sous-classes , , , , ou , p. ex. ensembles de diodes redresseuses les dispositifs n'ayant pas de conteneurs séparés les dispositifs étant d'un type prévu dans le groupe

Abrégé

A light-emitting device includes a substrate, a plurality of light-emitting diode (LED) dies, a first reflection layer, and a second reflection layer. The LED dies are on the substrate. The first reflection layer is on the LED dies. The second reflection layer is on the first reflection layer. The first reflection layer is configured to reflect a waveband of light emitted from the LED dies. The second reflection layer is configured to reflect a laser waveband, wherein the wavelength of the laser waveband is less than 420 nm.

Classes IPC  ?

• H01L 33/46 - Revêtement réfléchissant, p.ex. réflecteur de Bragg en diélectriques
• H01L 25/075 - Ensembles consistant en une pluralité de dispositifs à semi-conducteurs ou d'autres dispositifs à l'état solide les dispositifs étant tous d'un type prévu dans une seule des sous-classes , , , , ou , p. ex. ensembles de diodes redresseuses les dispositifs n'ayant pas de conteneurs séparés les dispositifs étant d'un type prévu dans le groupe
• H01L 33/38 - DISPOSITIFS À SEMI-CONDUCTEURS NON COUVERTS PAR LA CLASSE - Détails caractérisés par les électrodes ayant une forme particulière
• H01L 33/00 - DISPOSITIFS À SEMI-CONDUCTEURS NON COUVERTS PAR LA CLASSE - Détails

Abrégé

A light-emitting diode display panel includes a driving substrate, and a first light-emitting region and a second light-emitting region disposed on the driving substrate. The first light-emitting region has a first region and a second region adjacent to the first region in the first direction. The second light-emitting region is adjacent to the first light-emitting region and has a first corresponding region. The second region is between the first region and the first corresponding region. The light-emitting diode display panel further includes pixels disposed in the first region, the second region, and the first corresponding region. Each pixel includes a first light-emitting unit. The first pitch is between the first light-emitting units in the first region and in the second region. The second pitch is between the first light-emitting units in the second region and the first corresponding region. The first pitch is shorter than the second pitch.

Classes IPC  ?

• H01L 25/075 - Ensembles consistant en une pluralité de dispositifs à semi-conducteurs ou d'autres dispositifs à l'état solide les dispositifs étant tous d'un type prévu dans une seule des sous-classes , , , , ou , p. ex. ensembles de diodes redresseuses les dispositifs n'ayant pas de conteneurs séparés les dispositifs étant d'un type prévu dans le groupe

Abrégé

A package structure is provided. The package structure has a light-emitting region and a non-light-emitting region that is adjacent to the light-emitting region, and includes a substrate, a first light-emitting layer, a second light-emitting layer and a third light-emitting layer. The first light-emitting layer, the second light-emitting layer and the third light-emitting layer are sequentially stacked on the substrate. Each of the first light-emitting layer, the second light-emitting layer and the third light-emitting layer includes a transparent adhesive layer disposed in the light-emitting region, a light-emitting diode (LED) chip disposed on the transparent adhesive layer, a redistribution layer formed on the LED chip and extending from the light-emitting region to the non-light-emitting region, and a planarization layer disposed on the LED chip and the redistribution layer.

Classes IPC  ?

• H10H 20/831 - Électrodes caractérisées par leur forme
• H01L 23/00 - Détails de dispositifs à semi-conducteurs ou d'autres dispositifs à l'état solide
• H01L 25/13 - Ensembles consistant en une pluralité de dispositifs à semi-conducteurs ou d'autres dispositifs à l'état solide les dispositifs étant tous d'un type prévu dans une seule des sous-classes , , , , ou , p. ex. ensembles de diodes redresseuses les dispositifs ayant des conteneurs séparés les dispositifs étant d'un type prévu dans le groupe
• H01L 25/16 - Ensembles consistant en une pluralité de dispositifs à semi-conducteurs ou d'autres dispositifs à l'état solide les dispositifs étant de types couverts par plusieurs des sous-classes , , , , ou , p. ex. circuit hybrides
• H10H 20/01 - Fabrication ou traitement
• H10H 20/84 - Revêtements, p. ex. couches de passivation ou revêtements antireflets
• H10H 20/853 - Encapsulations caractérisées par leur forme

Abrégé

An optical activity detecting device is provided. The optical activity detecting device is adapted to detect an object. The optical activity detecting device includes a light source, a filter, a first polarizer, a second polarizer, a first compensation film and a first detector. The light source provides a light beam. The light beam travels from the light source, passes through the filter and the first polarizer, and enters the object. At least a portion of the light beam travels from the object, passes through the second polarizer and the first compensation film and is received by the first detector.

Classes IPC  ?

• G01S 7/499 - Détails des systèmes correspondant aux groupes , , de systèmes selon le groupe utilisant des effets de polarisation
• G02B 27/28 - Systèmes ou appareils optiques non prévus dans aucun des groupes , pour polariser
• G01S 17/04 - Systèmes de détermination de la présence d'une cible
• G01S 7/481 - Caractéristiques de structure, p. ex. agencements d'éléments optiques

Abrégé

Embodiments provide a micro light-emitting diode package structure and a method for forming the same. The micro light-emitting diode package structure includes a redistribution layer, a control device, micro light-emitting diodes, and a flexible material layer. The control device and the micro light-emitting diodes are disposed on and electrically connected to the redistribution layer. The flexible material layer covers the control device and the micro light-emitting diodes, wherein the micro light-emitting diodes are in contact with the flexible material layer.

Classes IPC  ?

• H01L 25/16 - Ensembles consistant en une pluralité de dispositifs à semi-conducteurs ou d'autres dispositifs à l'état solide les dispositifs étant de types couverts par plusieurs des sous-classes , , , , ou , p. ex. circuit hybrides
• H01L 33/54 - Encapsulations ayant une forme particulière
• H01L 33/62 - Dispositions pour conduire le courant électrique vers le corps semi-conducteur ou depuis celui-ci, p.ex. grille de connexion, fil de connexion ou billes de soudure
• H01L 33/60 - DISPOSITIFS À SEMI-CONDUCTEURS NON COUVERTS PAR LA CLASSE - Détails caractérisés par les éléments du boîtier des corps semi-conducteurs Éléments de mise en forme du champ optique Éléments réfléchissants

Abrégé

A display device includes a plurality of first packages and a plurality of second packages. The first packages are arranged on the substrate and each of the first packages includes a plurality of first light-emitting chips. The second packages are arranged on the substrate and each of the second packages includes a plurality of second light-emitting chips. The first packages and the second packages are alternately arranged in a first direction, and an arrangement of the first light-emitting chips of the first packages is different from an arrangement of the second light-emitting chips of the second packages.

Classes IPC  ?

• H01L 25/13 - Ensembles consistant en une pluralité de dispositifs à semi-conducteurs ou d'autres dispositifs à l'état solide les dispositifs étant tous d'un type prévu dans une seule des sous-classes , , , , ou , p. ex. ensembles de diodes redresseuses les dispositifs ayant des conteneurs séparés les dispositifs étant d'un type prévu dans le groupe

Abrégé

A package structure, a display device, and manufacturing methods thereof are provided. A package structure includes a conductive element, a first dielectric layer, a redistribution layer, a second dielectric layer, a light-shielding layer, a conductive layer, and a light-emitting diode unit. The first dielectric layer is disposed on the conductive element. The redistribution layer is disposed on the first dielectric layer. The redistribution layer is electrically connected to the conductive element. The second dielectric layer is disposed on the first dielectric layer. The light-shielding layer is disposed on the second dielectric layer. The conductive layer is disposed on the redistribution layer and includes a first conductive portion with a light reflectivity of less than 30%. The light-emitting diode unit is disposed on the conductive layer.

Classes IPC  ?

• H01L 33/46 - Revêtement réfléchissant, p.ex. réflecteur de Bragg en diélectriques
• H01L 33/62 - Dispositions pour conduire le courant électrique vers le corps semi-conducteur ou depuis celui-ci, p.ex. grille de connexion, fil de connexion ou billes de soudure
• H01L 33/00 - DISPOSITIFS À SEMI-CONDUCTEURS NON COUVERTS PAR LA CLASSE - Détails

Abrégé

A light-emitting device includes a circuit substrate, a wall, a light-emitting diode chip, a fluorescent resin and a plate. The wall is formed on the circuit substrate to form a concave cup with properties of light transmission and reflection, and has a height of the wall is H2. The light emitting diode chip is die-bonded on the circuit substrate in the concave cup and a height of the light-emitting diode chip is H1. The fluorescent resin is filled in the concave cup and covered over the light-emitting diode chip. The plate is covered on the fluorescent resin and equipped with properties of light transmission and reflection. A maximum thickness of the plate is H3, wherein H3=A*(H2/H1)+B, a value of A ranges from 10.5 to 15.5, and a value of B ranges from 0.05 to 131.5.

Classes IPC  ?

• H01L 33/50 - DISPOSITIFS À SEMI-CONDUCTEURS NON COUVERTS PAR LA CLASSE - Détails caractérisés par les éléments du boîtier des corps semi-conducteurs Éléments de conversion de la longueur d'onde
• H01L 33/48 - DISPOSITIFS À SEMI-CONDUCTEURS NON COUVERTS PAR LA CLASSE - Détails caractérisés par les éléments du boîtier des corps semi-conducteurs

Abrégé

A light-emitting diode structure includes a light-emitting part and a reflective part. The light-emitting part has a light-emitting surface. The reflective part is on the light-emitting part opposite to the light-emitting surface. The reflective part is a gradient distributed Bragg reflection structure and includes a plurality of first dielectric layers and a plurality of second dielectric layers. The second dielectric layers have a refractive index different from that of the first dielectric layer, and are alternately stacked with the first dielectric layers. Each of the first dielectric layers has a different optical thickness, and each of the second dielectric layers has a different optical thickness. The optical thicknesses of the first dielectric layers and the second dielectric layers vary in a gradient way away from the light-emitting part.

Classes IPC  ?

• H01L 33/46 - Revêtement réfléchissant, p.ex. réflecteur de Bragg en diélectriques

Abrégé

A light emitting diode structure includes a metal reflective layer, a first transparent electrically-conductive layer, a dielectric layer, second transparent electrically-conductive layers, a first type semiconductor layer, an active layer and a second type semiconductor layer. The metal reflective layer has first concave sections. The first transparent electrically-conductive layer is conformally formed over the first concave sections of the metal reflective layer. The dielectric layer is formed over the first transparent electrically-conductive layer and has through holes to expose the first transparent electrically-conductive layer. The second transparent electrically-conductive layers are formed over the dielectric layer, and connected with the first transparent electrically-conductive layer via the through holes. Each second transparent electrically-conductive layer is connected to the first transparent electrically-conductive layer to form a T-shaped cross section in each first concave section.

Classes IPC  ?

• H01L 33/10 - DISPOSITIFS À SEMI-CONDUCTEURS NON COUVERTS PAR LA CLASSE - Détails caractérisés par les corps semi-conducteurs ayant une structure réfléchissante, p.ex. réflecteur de Bragg en semi-conducteur

Abrégé

A light-emitting device includes a substrate, a circuit layer, a plurality of conductive connection portions, and a plurality of semiconductor light-emitting sources. The circuit layer on the substrate having a plurality of conductive structures, in which each conductive structure includes at least one bonding pad. An interval is between two adjacent ones of the conductive structures. Each conductive connection portion is correspondingly located on each bonding pad. Each semiconductor light-emitting source crosses each interval and contacts two adjacent ones of the conductive connection portions, such that the semiconductor light-emitting sources are respectively electrically connected to two adjacent ones of the conductive structures.

Classes IPC  ?

• H01L 33/62 - Dispositions pour conduire le courant électrique vers le corps semi-conducteur ou depuis celui-ci, p.ex. grille de connexion, fil de connexion ou billes de soudure
• H01L 25/075 - Ensembles consistant en une pluralité de dispositifs à semi-conducteurs ou d'autres dispositifs à l'état solide les dispositifs étant tous d'un type prévu dans une seule des sous-classes , , , , ou , p. ex. ensembles de diodes redresseuses les dispositifs n'ayant pas de conteneurs séparés les dispositifs étant d'un type prévu dans le groupe

Abrégé

A light conversion material includes a general formula and complies with a condition. The general formula is MmAaCcEe:ESxREy. M is at least one element selected from a group, and 2≤m≤3. A is at least one element selected from a group, and 0.01≤a≤1. C is at least one element selected from a group, and 1≤c≤9, E is at least one element selected from a group, and 5≤e≤7. ES is at least one element selected from a group, and 0≤x≤3. RE is at least one element selected from a group, and 0≤y≤3. The condition (2) is m+x+y=3.

Classes IPC  ?

• H01L 33/50 - DISPOSITIFS À SEMI-CONDUCTEURS NON COUVERTS PAR LA CLASSE - Détails caractérisés par les éléments du boîtier des corps semi-conducteurs Éléments de conversion de la longueur d'onde
• H01L 33/00 - DISPOSITIFS À SEMI-CONDUCTEURS NON COUVERTS PAR LA CLASSE - Détails
• G02F 1/13357 - Dispositifs d'éclairage

Produits et services

chip scale package diodes; near chip scale package diodes; SMD (surface-mount devices) type lighting emitter diodes; multi-chip lighting emitter diodes; diodes; lighting emitter diodes.

Abrégé

An illumination device includes a rectifier circuit, M light-emitting modules, and a control module. The rectifier circuit has a positive output terminal and a negative output terminal, and generates a driving voltage between the positive output terminal and the negative output terminal according to an input power. The M light-emitting modules are coupled between the positive output terminal and the negative output terminal. Each of the M light-emitting modules has a conduction voltage, and includes a light-emitting unit that includes at least one light-emitting diode. The control module is coupled between the rectifier circuit and the M light-emitting modules, and controls the M light-emitting modules to dynamically form S light-emitting diode strings coupled in parallel with each other. A number of the light-emitting units in each of the S light-emitting diode strings is N, in which S×N=M, where M, S, N are positive integers.

Classes IPC  ?

• H05B 37/00 - Circuits pour sources lumineuses électriques en général
• H05B 33/08 - Circuits pour faire fonctionner des sources lumineuses électroluminescentes

Abrégé

An epitaxial structure includes a substrate, a first epitaxial layer and a second epitaxial layer. The substrate has a surface, and the first epitaxial layer is disposed over the substrate and defines a plurality of slanting air voids tapering away from the substrate and an opening over each of the slanting air voids. The second epitaxial layer is disposed on the first epitaxial layer and collectively defines the slanting air voids in a shape of trapezoid with the surface and the first epitaxial layer.

Classes IPC  ?

• H01L 33/20 - DISPOSITIFS À SEMI-CONDUCTEURS NON COUVERTS PAR LA CLASSE - Détails caractérisés par les corps semi-conducteurs ayant une forme particulière, p.ex. substrat incurvé ou tronqué
• H01L 33/02 - DISPOSITIFS À SEMI-CONDUCTEURS NON COUVERTS PAR LA CLASSE - Détails caractérisés par les corps semi-conducteurs
• H01L 33/00 - DISPOSITIFS À SEMI-CONDUCTEURS NON COUVERTS PAR LA CLASSE - Détails
• H01L 33/12 - DISPOSITIFS À SEMI-CONDUCTEURS NON COUVERTS PAR LA CLASSE - Détails caractérisés par les corps semi-conducteurs ayant une structure de relaxation des contraintes, p.ex. couche tampon
• H01L 21/02 - Fabrication ou traitement des dispositifs à semi-conducteurs ou de leurs parties constitutives
• C30B 23/04 - Dépôt suivant une configuration déterminée, p. ex. en utilisant des masques
• C30B 25/04 - Dépôt suivant une configuration déterminée, p. ex. en utilisant des masques
• C30B 29/40 - Composés AIII BV

Abrégé

An epitaxial structure includes a substrate, a first epitaxial layer and a second epitaxial layer. The substrate has a surface, and the first epitaxial layer is disposed over the substrate and defines a plurality of stepped air voids and an opening over each of the stepped air voids. The second epitaxial layer is disposed on the first epitaxial layer and collectively defines the stepped air voids with the surface and the first epitaxial layer.

Classes IPC  ?

• H01L 33/20 - DISPOSITIFS À SEMI-CONDUCTEURS NON COUVERTS PAR LA CLASSE - Détails caractérisés par les corps semi-conducteurs ayant une forme particulière, p.ex. substrat incurvé ou tronqué
• H01L 33/02 - DISPOSITIFS À SEMI-CONDUCTEURS NON COUVERTS PAR LA CLASSE - Détails caractérisés par les corps semi-conducteurs
• H01L 33/00 - DISPOSITIFS À SEMI-CONDUCTEURS NON COUVERTS PAR LA CLASSE - Détails
• H01L 33/12 - DISPOSITIFS À SEMI-CONDUCTEURS NON COUVERTS PAR LA CLASSE - Détails caractérisés par les corps semi-conducteurs ayant une structure de relaxation des contraintes, p.ex. couche tampon
• H01L 21/02 - Fabrication ou traitement des dispositifs à semi-conducteurs ou de leurs parties constitutives
• C30B 23/04 - Dépôt suivant une configuration déterminée, p. ex. en utilisant des masques
• C30B 25/04 - Dépôt suivant une configuration déterminée, p. ex. en utilisant des masques
• C30B 29/40 - Composés AIII BV

Abrégé

A light-emitting diode (LED) package structure includes a lead frame, a LED chip, a package body, N opaque spacer and N+1 encapsulating glues. The LED chip is disposed on the lead frame; the package body covers the lead frame and exposes the LED chip. The package body has an accommodation space, divided by the N opaque spacers disposed on the LED chip into N+1 chambers. The N+1 encapsulating glues are filled into the N+1 chambers, where N is a natural number.

Classes IPC  ?

• H01L 33/00 - DISPOSITIFS À SEMI-CONDUCTEURS NON COUVERTS PAR LA CLASSE - Détails
• H01L 33/50 - DISPOSITIFS À SEMI-CONDUCTEURS NON COUVERTS PAR LA CLASSE - Détails caractérisés par les éléments du boîtier des corps semi-conducteurs Éléments de conversion de la longueur d'onde
• H01L 33/56 - Matériaux, p.ex. résine époxy ou silicone

Abrégé

A light emitting diode (LED) structure includes a substrate, an LED element, a reverse current protection element, a third conductor, and a fourth conductor. The LED element includes a first N-type semiconductor layer, a first lighting layer, a first P-type semiconductor layer, a first transparent conductive layer, a first electrode, and a second electrode. The reverse current protection element is located on the substrate and surrounds the LED element. The reverse current protection element includes a stack layer, a first conductor, and a second conductor. The stack layer is formed on the substrate by sequentially stacking a second N-type semiconductor layer, a second lighting layer, and a second P-type semiconductor layer. The third conductor is electrically connected to the first conductor and the second electrode. The fourth conductor is electrically connected to the second conductor and the first electrode.

Classes IPC  ?

• H01L 33/00 - DISPOSITIFS À SEMI-CONDUCTEURS NON COUVERTS PAR LA CLASSE - Détails
• H01L 27/15 - Dispositifs consistant en une pluralité de composants semi-conducteurs ou d'autres composants à l'état solide formés dans ou sur un substrat commun comprenant des composants semi-conducteurs avec au moins une barrière de potentiel ou une barrière de surface, spécialement adaptés pour l'émission de lumière

Abrégé

An LED lighting module includes a support board with a first LED and a second LED thereon. The wavelength of light emitted by the first LED is different from that of light emitted by the second LED. The height of the first LED is different from that of the second LED for preventing the emitting light of the first LED absorbed by the wavelength conversion layer of the second LED.

Classes IPC  ?

• H01L 33/00 - DISPOSITIFS À SEMI-CONDUCTEURS NON COUVERTS PAR LA CLASSE - Détails
• H01L 25/075 - Ensembles consistant en une pluralité de dispositifs à semi-conducteurs ou d'autres dispositifs à l'état solide les dispositifs étant tous d'un type prévu dans une seule des sous-classes , , , , ou , p. ex. ensembles de diodes redresseuses les dispositifs n'ayant pas de conteneurs séparés les dispositifs étant d'un type prévu dans le groupe

Abrégé

A light emitting device comprising a carrier, a first and a second reflective layers, a first and a second micro-structures, a LED package device, a light guide device and a light directing cover is provided. The carrier comprises an upper plate and a lower plate each having a first surface and a second surface. The lower plate has a through hole. The first and second reflective layers are formed on the edges of the second surface of the upper plate and the first surface of the lower plate, respectively. The first and second micro-structures are formed on the edges of the second surface of the upper plate and the first surface of the lower plate, respectively. The LED package device is disposed below the through hole. The light guide device is connected to the LED package device. The light directing cover surrounds the light guide device.

Classes IPC  ?

• H01L 33/00 - DISPOSITIFS À SEMI-CONDUCTEURS NON COUVERTS PAR LA CLASSE - Détails
• F21K 99/00 - Matière non prévue dans les autres groupes de la présente sous-classe
• F21V 3/04 - GlobesVasquesVerres de protection caractérisés par les matériaux, traitements de surface ou revêtements
• F21V 5/00 - Réfracteurs pour sources lumineuses
• F21V 7/05 - Structure de l'optique à surface plane
• F21Y 101/02 - Structure miniature, p. ex. diodes électroluminescentes (LED)
• F21V 8/00 - Utilisation de guides de lumière, p. ex. dispositifs à fibres optiques, dans les dispositifs ou systèmes d'éclairage

Abrégé

A phosphor composition is provided. The phosphor composition comprises a phosphor nucleus and a hydrophobic layer. The hydrophobic layer is bonded on a surface of the phosphor nucleus and consists of an organic compound with a hydrophobic functional group.

Classes IPC  ?

• C09K 11/77 - Substances luminescentes, p. ex. électroluminescentes, chimiluminescentes contenant des substances inorganiques luminescentes contenant des métaux des terres rares
• C09K 11/65 - Substances luminescentes, p. ex. électroluminescentes, chimiluminescentes contenant des substances inorganiques luminescentes contenant du carbone
• H05B 33/10 - Appareils ou procédés spécialement adaptés à la fabrication des sources lumineuses électroluminescentes
• C09K 11/02 - Emploi de substances particulières comme liants, revêtements de particules ou milieux de suspension

Abrégé

A lighting device includes a light bar, two reflective covers and a reflective plate. The two reflective covers respectively connected to two opposite long sides of the light bar. The reflective plate is positioned at the light output side of the light bar. The reflective surface of the reflective plate faces the light output side of the light bar. The reflective plate has a wavelength conversion layer positioned on the reflective surface thereof. The light bar emits a first wavelength light, and a portion of the first wavelength light is converted by the wavelength conversion layer into a second wavelength light which is reflected by the reflective plate to the two reflective covers, while the remaining non-converted first wavelength light is reflected by the reflective plate to the two reflective covers and mixed with the second wavelength lights to give a light with a predetermined spectrum.

Classes IPC  ?

• F21V 13/08 - Combinaisons de deux sortes d'éléments uniquement les éléments étant des filtres, ou des éléments photoluminescents, et des réflecteurs
• F21V 13/12 - Combinaisons de trois sortes d'éléments uniquement

Abrégé

An illumination apparatus includes a substrate, an illumination element and a lens structure. The illumination element is disposed on the substrate. The lens structure is disposed above the illumination element, and includes a lens body and a plurality of lens stands. The lens body is positioned above the illumination element. The lens stands are disposed on the bottom of the lens body. The substrate has a plurality of tunnels are around the illumination element. The lens stands respectively insert into the tunnels, so that the lens body is fastened on the substrate.

Classes IPC  ?

• H01J 5/16 - Dispositifs optiques ou photographiques combinés structuralement avec l'enceinte
• H01J 61/40 - Dispositifs propres à modifier la couleur ou la longueur d'onde de la lumière par des filtres de lumièreDispositifs propres à modifier la couleur ou la longueur d'onde de la lumière par des revêtements en couleur dans ou sur l'enveloppe
• H01K 1/26 - ÉcransFiltres
• H01K 1/30 - EnveloppesEnceintes comprenant des lentilles incorporées
• F21V 8/00 - Utilisation de guides de lumière, p. ex. dispositifs à fibres optiques, dans les dispositifs ou systèmes d'éclairage
• H05K 3/00 - Appareils ou procédés pour la fabrication de circuits imprimés
• H05K 1/18 - Circuits imprimés associés structurellement à des composants électriques non imprimés

Abrégé

A Light emitting diode (LED) includes a substrate, a LED chip, a wavelength conversion layer, a lens and a reflective layer. The LED chip is mounted on the substrate. The wavelength conversion layer covers the top surface of the LED chip and exposes the lateral surface of the LED chip. The lens is disposed on the substrate and encloses the LED chip and the wavelength conversion layer. The reflective layer is disposed on the lens for reflecting the light emitted from the lateral surface of the LED chip.

Classes IPC  ?

• H01L 21/33 - Procédés comportant plusieurs étapes pour la fabrication de dispositifs du type bipolaire, p.ex. diodes, transistors, thyristors les dispositifs comportant trois électrodes ou plus

Abrégé

A manufacturing process of a vertical type solid state light emitting device is provided. A substrate is provided. M metal nitride buffer layer is formed on the substrate, and a breakable structure containing M metal droplet structures is formed on the buffer layer. A first type semiconductor layer, an active layer and a second type semiconductor layer are sequentially formed on the breakable structure. A second type electrode is formed on the second type semiconductor layer. The first type semiconductor layer, the active layer, the second type semiconductor layer and the second type electrode are stacked to form a light emitting stacking structure. The breakable structure is damaged to separate from the light emitting stacking structure, so that a surface of the first type semiconductor layer of the light emitting stacking structure is exposed. A first type electrode is formed on the surface of the first type semiconductor layer.

Classes IPC  ?

• H01L 21/00 - Procédés ou appareils spécialement adaptés à la fabrication ou au traitement de dispositifs à semi-conducteurs ou de dispositifs à l'état solide, ou bien de leurs parties constitutives
• H01L 21/30 - Traitement des corps semi-conducteurs en utilisant des procédés ou des appareils non couverts par les groupes
• H01L 21/46 - Traitement de corps semi-conducteurs en utilisant des procédés ou des appareils non couverts par les groupes
• H01L 21/02 - Fabrication ou traitement des dispositifs à semi-conducteurs ou de leurs parties constitutives
• H01L 33/32 - Matériaux de la région électroluminescente contenant uniquement des éléments du groupe III et du groupe V de la classification périodique contenant de l'azote
• H01L 33/00 - DISPOSITIFS À SEMI-CONDUCTEURS NON COUVERTS PAR LA CLASSE - Détails

Abrégé

The present invention provides a light emitting diode (LED) element which comprises a substrate, a buffer layer, a plurality of nano-spheres and a light emitting structure. The substrate comprises a plurality of grooves arranged at intervals on a surface of the substrate. The buffer layer is disposed on the surface of the substrate where the grooves being formed, wherein the grooves are disposed between the substrate and the buffer layer. The nano-spheres are received in the grooves, so each groove is provided with at least a nano-sphere. The light emitting structure is disposed on the buffer layer.

Classes IPC  ?

• H01L 33/58 - DISPOSITIFS À SEMI-CONDUCTEURS NON COUVERTS PAR LA CLASSE - Détails caractérisés par les éléments du boîtier des corps semi-conducteurs Éléments de mise en forme du champ optique

Abrégé

A lighting device is provided. The lighting device includes an optical reflection plate, a light holder, and at least one light source. The optical reflection plate includes a non-reflective region located in the center of the optical reflection plate, and a plurality of reflection regions surrounding the non-reflective region in sequence. The light holder is located on the non-reflective region of the optical reflection plate and includes a circle side-light concave portion. A light-emitting opening of the side-light concave portion faces to the reflection regions. The light source is located in the side-light concave portion of the light holder. When the light source emits light, the light emitted from the light source is reflected by the reflection regions.

Classes IPC  ?

• F21V 7/00 - Réflecteurs pour sources lumineuses

Abrégé

A plant illumination apparatus includes a light source module including a first light source and a second light source generating lights having different wavelengths, an environment-detecting module detecting an external environment to obtain a real-time environment parameter, and a control module connected to the light source module and the environment-detecting module. The control module includes a processor unit and a storage unit storing a database of plant growing environment parameters. The processor unit loads at least one preset growing environment parameter corresponding to a plant growth timing from the database of plant growing environment parameters, and compares the preset growing environment parameter with the real-time environment parameter to output at least one comparison result. The processor unit adjusts the first light source and the second light source according to the comparison result, so that an adjusted environment parameter matches the preset growing environment parameter.

Classes IPC  ?

• H05B 37/02 - Commande

Abrégé

A light component includes a printed circuit board and a plurality of lighting emitting diodes (LEDs). The printed circuit board has a metal substrate. The LEDs are disposed on the printed circuit board, wherein two opposite edges of the metal substrate protrude out and are bent towards the LEDs to form two metal clamps.

Classes IPC  ?

• H01L 31/12 - Dispositifs à semi-conducteurs sensibles aux rayons infrarouges, à la lumière, au rayonnement électromagnétique d'ondes plus courtes, ou au rayonnement corpusculaire, et spécialement adaptés, soit comme convertisseurs de l'énergie dudit rayonnement e; Procédés ou appareils spécialement adaptés à la fabrication ou au traitement de ces dispositifs ou de leurs parties constitutives; Leurs détails structurellement associés, p.ex. formés dans ou sur un substrat commun, avec une ou plusieurs sources lumineuses électriques, p.ex. avec des sources lumineuses électroluminescentes, et en outre électriquement ou optiquement couplés avec lesdites sour
• H01L 21/00 - Procédés ou appareils spécialement adaptés à la fabrication ou au traitement de dispositifs à semi-conducteurs ou de dispositifs à l'état solide, ou bien de leurs parties constitutives
• F21V 8/00 - Utilisation de guides de lumière, p. ex. dispositifs à fibres optiques, dans les dispositifs ou systèmes d'éclairage

Abrégé

A manufacturing method of a solid state light emitting element is provided. A plurality of protrusion structures separated to each other are formed on a first substrate. A buffer layer is formed on the protrusion structures and fills the gaps between protrusion structures. An epitaxial growth layer is formed on the buffer layer to form a first semiconductor stacking structure. The first semiconductor stacking structure is inverted to a second substrate, so that the first semiconductor epitaxial layer and the second substrate are connected to form a second semiconductor stacking structure. The buffer layer is etched by a first etchant solution to form a third semiconductor stacking structure. A second etchant solution is used to permeate through the gaps between the protrusion structures, so that the protrusion structures are etched completely. The first substrate is removed from the third semiconductor stacking structure to form a fourth semiconductor stacking structure.

Classes IPC  ?

• H01L 51/50 - Dispositifs à l'état solide qui utilisent des matériaux organiques comme partie active, ou qui utilisent comme partie active une combinaison de matériaux organiques et d'autres matériaux; Procédés ou appareils spécialement adaptés à la fabrication ou au traitement de tels dispositifs ou de leurs parties constitutives spécialement adaptés pour l'émission de lumière, p.ex. diodes émettrices de lumière organiques (OLED) ou dispositifs émetteurs de lumière à base de polymères (PLED)
• H01L 51/52 - Dispositifs à l'état solide qui utilisent des matériaux organiques comme partie active, ou qui utilisent comme partie active une combinaison de matériaux organiques et d'autres matériaux; Procédés ou appareils spécialement adaptés à la fabrication ou au traitement de tels dispositifs ou de leurs parties constitutives spécialement adaptés pour l'émission de lumière, p.ex. diodes émettrices de lumière organiques (OLED) ou dispositifs émetteurs de lumière à base de polymères (PLED) - Détails des dispositifs
• H01L 51/54 - Emploi de matériaux spécifiés
• H01L 51/56 - Procédés ou appareils spécialement adaptés à la fabrication ou au traitement de tels dispositifs ou de leurs parties constitutives

Abrégé

A light source cooling device includes a light source module, an inner casing, an outer casing, and a plurality of spacers. The inner casing encloses an accommodation space for accommodating the light source module. The outer casing surrounds the inner casing and has a gap included between an inner wall of the inner casing and the outer casing, wherein the inner casing and the outer casing are made of materials with different thermal conductivity coefficients. The inner wall of the inner casing, an outer wall of the outer casing, and the spacers together form a plurality of heat-dissipating passages. The inner wall absorbs the heat generated by the light source module and generates a temperature gradient between the inner wall and the outer wall, which assists in creating thermal convection to exhaust the heat.

Classes IPC  ?

• F21V 29/00 - Protection des dispositifs d'éclairage contre les détériorations thermiquesDispositions de refroidissement ou de chauffage spécialement adaptées aux dispositifs ou systèmes d'éclairage

Abrégé

A package structure of semiconductor light emitting element is provided. The package structure of semiconductor light emitting element includes a substrate, a light emitting element and a transparent conductive board. A first electrode and a second electrode are disposed on the substrate. The light emitting element is disposed on the substrate and between the first electrode and the second electrode. A first bonding pad and a second bonding pad are disposed on the light emitting element. The transparent conductive board has a first surface and a second surface opposite to the first surface. The second surface of the transparent conductive board is located over the light emitting element for electrically connecting the first electrode and the first bonding pad and electrically connecting the second electrode and the second bonding pad.

Classes IPC  ?

• H01L 33/00 - DISPOSITIFS À SEMI-CONDUCTEURS NON COUVERTS PAR LA CLASSE - Détails

Abrégé

th solid state emitting elements of each row of the solid state light emitting element series are electrically connected to a first conductive line and a second conductive line located on the edges of the first surface via the first type electrode pad and the second type electrode pad, respectively. The first conductive line and the second conductive line are physically disconnected.

Classes IPC  ?

• H01L 33/48 - DISPOSITIFS À SEMI-CONDUCTEURS NON COUVERTS PAR LA CLASSE - Détails caractérisés par les éléments du boîtier des corps semi-conducteurs

Abrégé

A lighting module is provided. The lighting module comprises a circuit board, a first light source array, a second light source array, and a plurality of first light guides. The first light source array is disposed on the circuit board and comprises a plurality of first solid light emitting semiconductors providing a first light with a first wavelength. The second light source array is disposed on the circuit board and comprises a plurality of second solid light emitting semiconductors providing a second light with a second wavelength. The first light guides are disposed on the circuit board and between the second solid light emitting semiconductors. The second solid light emitting semiconductors are located on a side of each of the first light guides, respectively, so that the second light emitted by the second solid light emitting semiconductors enters the first light guides to be uniformly emitted.

Classes IPC  ?

• F21V 7/04 - Structure de l'optique

Abrégé

A LED (Light Emitting Diode) bulb structure includes a base, a plurality of fins and a shell. One end of the base is electrically connected to a power source, and the other end of the base is used for holding a LED light source. The fins are disposed on a surface of the base. The shell encloses the fins, and the shell includes a plurality of first heat-dissipation holes and a plurality of second heat-dissipation holes. The first heat-dissipation holes are arranged around the shell and corresponding to the fins for allowing airflow entering the first heat-dissipation holes to directly pass through each of the fins corresponding to each of the first heat-dissipation holes. The second heat-dissipation holes are arranged around the shell and disposed above the first heat-dissipation holes for enabling the first heat-dissipation holes and the second heat-dissipation holes to conduct thermal convection.

Classes IPC  ?

• F21V 29/00 - Protection des dispositifs d'éclairage contre les détériorations thermiquesDispositions de refroidissement ou de chauffage spécialement adaptées aux dispositifs ou systèmes d'éclairage

Abrégé

A semiconductor light emitting structure including a substrate, a second type electrode layer, a reflecting layer, an insulating layer, a first type electrode layer, a first type semiconductor layer, an active layer and a second type semiconductor layer is provided. The second type electrode layer formed on the substrate has a current spreading grating formed by several conductive pillars and conductive walls, which are staggered and connected to each other. The reflecting layer and the insulating layer are formed on the second type electrode layer in sequence, and cover each conductive pillar and each conductive wall. The first type electrode layer, the first type semiconductor layer and the active layer are formed on the insulating layer in sequence. The second type semiconductor layer is formed on the active layer, and covers each conductive pillar and each conductive wall.

Classes IPC  ?

• H01L 29/18 - Sélénium ou tellure uniquement, mis à part les matériaux de dopage ou autres impuretés

Abrégé

A light-emitting diode has a metal structure, a light-emitting chip, and a bowl structure. The metal structure has a platform and a heat sink. The platform has a top face, a first side, and a second side opposite to the first side. A first reflector and a second reflector respectively extend from the first side and the second side. The heat sink extends below the top face and has a drop from the bottom surfaces of the first reflector and the second reflector. The light-emitting chip is disposed on the top face. The bowl structure covers the outer surface of the metal structure and shields the bottom surfaces of the first reflector and the second reflector. A thermal dispassion surface of the heat sink is exposed from the bowl structure. An inner surface of bowl wall has a plurality of reflection structures to promote the light extraction efficiency.

Classes IPC  ?

• H01L 33/00 - DISPOSITIFS À SEMI-CONDUCTEURS NON COUVERTS PAR LA CLASSE - Détails
• H01L 21/00 - Procédés ou appareils spécialement adaptés à la fabrication ou au traitement de dispositifs à semi-conducteurs ou de dispositifs à l'état solide, ou bien de leurs parties constitutives

Abrégé

A wafer-level packaging process of a light-emitting diode is provided. First, a semiconductor stacked layer is formed on a growth substrate. A plurality of barrier patterns and a plurality of reflective layers are then formed on the semiconductor stacked layer, wherein each reflective layer is surrounded by one of the barrier patterns. A first bonding layer is then formed on the semiconductor stacked layer to cover the barrier patterns and the reflective layers. Thereafter, a carrying substrate having a plurality of second bonding layers and a plurality of conductive plugs electrically insulated from each other is provided, and the first bonding layer is bonded with the second bonding layer. The semiconductor stacked layer is then separated from the growth substrate. Next, the semiconductor stacked layer is patterned to form a plurality of semiconductor stacked patterns. Next, each semiconductor stacked pattern is electrically connected to the conductive plug.

Classes IPC  ?

• H01L 21/00 - Procédés ou appareils spécialement adaptés à la fabrication ou au traitement de dispositifs à semi-conducteurs ou de dispositifs à l'état solide, ou bien de leurs parties constitutives

Abrégé

A light-emitting diode chip structure including a conductive substrate, a semiconductor stacking layer and a patterned seed crystal layer is provided. The conductive substrate has a surface. The surface has a first region and a second region alternately distributed over the surface. The semiconductor stacking layer is disposed on the conductive substrate, and the surface of the conductive substrate faces the semiconductor stacking layer. The patterned seed crystal layer is disposed on the first region of the surface of the conductive substrate and between the conductive substrate and the semiconductor stacking layer. The patterned seed crystal layer separates the semiconductor stacking layer from the first region. The semiconductor stacking layer covers the patterned seed crystal layer and the second region, and is electrically connected to the conductive substrate through the second region. A fabrication method of the light-emitting diode chip structure is also provided.

Classes IPC  ?

• H01L 33/20 - DISPOSITIFS À SEMI-CONDUCTEURS NON COUVERTS PAR LA CLASSE - Détails caractérisés par les corps semi-conducteurs ayant une forme particulière, p.ex. substrat incurvé ou tronqué

Abrégé

A point light source includes a light-emitting portion, a first lead and a second lead. The first lead and the second lead are electrically connected to the light-emitting portion. The first lead and the second lead respectively have a wedging portion. The wedging portions can be matched with each other. A light source module using the point light source is also provided. The light source module includes at least one light source assembly. Each light source assembly includes a plurality of the point light sources connected in series. Adjacent two point light sources are wedged to each other in series by a combination of the wedging portions of the adjacent first lead and second lead.

Classes IPC  ?

• F21V 5/00 - Réfracteurs pour sources lumineuses
• F21S 4/00 - Dispositifs ou systèmes d'éclairage utilisant une guirlande ou une bande de sources lumineuses
• H01L 33/62 - Dispositions pour conduire le courant électrique vers le corps semi-conducteur ou depuis celui-ci, p.ex. grille de connexion, fil de connexion ou billes de soudure

Abrégé

A light emitting diode and a fabricating method thereof are provided. A first-type semiconductor layer, a light emitting layer and a second-type semiconductor layer with a first surface are sequentially formed a substrate. Next, the first surface is treated during a surface treatment process to form a current-blocking region which extends from the first surface to the light emitting layer to a depth of 1000 angstroms. Afterward, a first electrode is formed above the current-blocking region of the second-type semiconductor layer, and a second electrode is formed to electrically contact to the first-type semiconductor layer. Since the current-blocking region is formed with a determined depth within the second-type semiconductor layer, the light extraction efficiency of the light emitting diode may be increased.

Classes IPC  ?

• H01L 33/30 - Matériaux de la région électroluminescente contenant uniquement des éléments du groupe III et du groupe V de la classification périodique

Abrégé

A method for fabricating a light emitting diode chip is provided. Firstly, a semiconductor device layer is formed on a substrate. Afterwards, a current spreading layer is formed on a portion of the semiconductor device layer. Then, a current blocking layer and a passivation layer are formed on a portion of the semiconductor device layer not covered by the current spreading layer. Finally, a first electrode is formed on the current blocking layer and the current spreading layer. Moreover, a second electrode is formed on the semiconductor device layer.

Classes IPC  ?

• H01L 33/00 - DISPOSITIFS À SEMI-CONDUCTEURS NON COUVERTS PAR LA CLASSE - Détails

Abrégé

A method for fabricating a light emitting diode chip is provided. Firstly, a semiconductor device layer is formed on a substrate. Afterwards, a current spreading layer is formed on a portion of the semiconductor device layer. Then, a current blocking layer and a passivation layer are formed on a portion of the semiconductor device layer not covered by the current spreading layer. Finally, a first electrode is formed on the current blocking layer and the current spreading layer. Moreover, a second electrode is formed on the semiconductor device layer.

Classes IPC  ?

• H01L 21/00 - Procédés ou appareils spécialement adaptés à la fabrication ou au traitement de dispositifs à semi-conducteurs ou de dispositifs à l'état solide, ou bien de leurs parties constitutives

Abrégé

A LED chip including a substrate, a semiconductor device layer, a current blocking layer, a current spread layer, a first electrode and a second electrode is provided. The semiconductor device layer is disposed on the substrate. The current blocking layer is disposed on a part of the semiconductor device layer and includes a current blocking segment and a current distribution adjusting segment. The current spread layer is disposed on a part of the semiconductor device layer and covers the current blocking layer. The first electrode is disposed on the current spread layer, wherein a part of the current blocking segment is overlapped with the first electrode. Contours of the current blocking segment and the first electrode are similar figures. Contour of the first electrode and is within contour of the current blocking segment. The current distribution adjusting segment is not overlapped with the first electrode.

Classes IPC  ?

• H01L 33/00 - DISPOSITIFS À SEMI-CONDUCTEURS NON COUVERTS PAR LA CLASSE - Détails

Produits et services

Electronic luminescent display panels; electronic advertisement and messaging display unit with multi-networking (TCP/IP) capabilities and remote connectivity; electrophoretic displays; diodes; light emitting diodes (LEDs); LED and HID light controls; light emitting diode (LED) displays; flat panel display screens; safety equipment, namely, beacon lights, emergency warning lights Electric night lights; solar-powered all-weather lights; electric torches for lighting; miniature light bulbs; vehicle turn-signal light bulbs; LED underwater lights; aquarium lights; crystal lamps; curling lamps (crystal); discharge lamps and their fittings; halogen light bulbs; industrial electric oscillating fans for automatic cleaning of ceilings, light fixtures, ducts and other overhead structures exposed to fibrous airborne contaminants; chandeliers; safety lamps for underground use; vehicle dynamo lamps; ceiling lights; incandescent lamps; projector lamps; lights for use in illuminating signs and displays; lights for vehicles; vehicle headlights; tail lights for vehicles; vehicle turn-signal light bulbs; lighting apparatus for vehicles; guard devices for lighting; parking lights; art designing lights; incandescent lamps and their fittings; reversing lights; lanterns for lighting; table lamps; stop guiding lights; electric lighting fixtures, namely, power failure backup safety lighting; high intensity search lights; air cleaning units containing an air filter, ultraviolet lights and a photocatalytic filter; lodge lights; visor lights; light diffusers; electric luminaires; lighting apparatus, namely, lighting installations; lamps; electric lights for Christmas trees; standard lamps; lighted party-themed decorations, electric light decorative strings; wrist lights for illumination purposes; lighting apparatus for transportation; electric lamps; brake lights for vehicles; spot lights; film stage lighting apparatus; overhead lamps; diving lights; wall lights; bulbs for motorcycle; curling lamps; lamp bulbs; lamp holders; lamp bases; lamp shades; electric discharge tubes for lighting; burners for lamps; reading lights; fog lamps; safety lamps for underground use

Produits et services

Electronic panels for displaying messages; Advertising boards [mechanical or luminous]; Notice boards [luminous signboards]; Display monitors; Lcd panels; Diodes; Light emitting diodes; Light emitting diode displays; Flashing safety lights; Visors [protective]; Luminous or mechanical road signs; Luminous rotating advertising supports; Traffic control apparatus [luminous]; Traffic guidance installations [luminous signs]; Light-conducting filaments. Lamps; Solar lamps; Fluorescent lighting apparatus; Bulbs for lighting; Light bulbs for directional signals for vehicles; Safety lamps for underground use; Aquarium lights; Curling lamps; Rechargeable torches; Halogen Lamps; Ceiling fans; Chandeliers; Safety lamps; Dynamo lights for vehicles; Ceiling lights; Luminous tubes for lighting; Projector lamps; Headlamp bulbs; Tail lamp bulbs; Automobile lights; Vehicle headlights; Taillights for vehicles; Glass covers for lamps;  Motor vehicle lamps; Light fittings; Lights for automobiles; Table lamps; Lighting installations for air vehicles; Searchlights; Germicidal lamps for purifying air; Light diffusers; Lighting apparatus; Lamps; Christmas tree (Electric lights for-); Standard lamps; Fairy light for festive decoration; Electrical lamps; Brake lights for vehicles; Emergency lamps; Spotlights; Film stage lighting apparatus; Diving lights; Wall lights; Curling lamps; Light bulbs; Lamp holders; Lamp bases;  Lamp shades; Luminous tubes for lighting; Burners for lamps;  Reading lamps; Miners' lamps; Screens for directing light.

Abrégé

In a fabricating method of an LED, a first-type doped semiconductor material layer, a light emitting material layer, and a second-type doped semiconductor material layer are sequentially formed on a substrate. The first-type and second-type doped semiconductor material layers and the light emitting material layer are patterned to form a first-type doped semiconductor layer, an active layer, and a second-type doped semiconductor layer. The active layer is disposed on a portion of the first-type doped semiconductor layer. The second-type doped semiconductor layer is disposed on the active layer and has a first top surface. A wall structure is formed on the first-type doped semiconductor layer that is not covered by the active layer, and the wall structure surrounds the active layer and has a second top surface higher than the first top surface of the second-type doped semiconductor layer. Electrodes are formed on the first-type and second-type doped semiconductor layers.

Classes IPC  ?

• H01L 33/02 - DISPOSITIFS À SEMI-CONDUCTEURS NON COUVERTS PAR LA CLASSE - Détails caractérisés par les corps semi-conducteurs

Abrégé

The present invention provides a manufacturing method of an LED chip. First, a device layer is formed on a growth substrate, wherein the device layer has a first surface connected to the growth substrate and a second surface. Next, a plurality of first trenches are formed on the second surface of the device layer. Then, a protection layer is formed on the side walls of the first trenches. After that, the second surface is bonded with a supporting substrate and the device layer is then separated from the growth substrate. Further, a plurality of second trenches corresponding to the first trenches are formed in the device layer to form a plurality of LEDs, wherein the second trenches extend from the first surface to the bottom portions of the first trenches. Furthermore, a plurality of electrodes are formed on the first surface of the device layer.

Classes IPC  ?

• H01L 27/15 - Dispositifs consistant en une pluralité de composants semi-conducteurs ou d'autres composants à l'état solide formés dans ou sur un substrat commun comprenant des composants semi-conducteurs avec au moins une barrière de potentiel ou une barrière de surface, spécialement adaptés pour l'émission de lumière

Abrégé

A wafer-level packaging process of a light-emitting diode is provided. First, a semiconductor stacked layer is formed on a growth substrate. A plurality of barrier patterns and a plurality of reflective layers are then formed on the semiconductor stacked layer, wherein each reflective layer is surrounded by one of the barrier patterns. A first bonding layer is then formed on the semiconductor stacked layer to cover the barrier patterns and the reflective layers. Thereafter, a carrying substrate having a plurality of second bonding layers and a plurality of conductive plugs electrically insulated from each other is provided, and the first bonding layer is bonded with the second bonding layer. The semiconductor stacked layer is then separated from the growth substrate. Next, the semiconductor stacked layer is patterned to form a plurality of semiconductor stacked patterns. Next, each semiconductor stacked pattern is electrically connected to the conductive plug.

Classes IPC  ?

• H01L 33/00 - DISPOSITIFS À SEMI-CONDUCTEURS NON COUVERTS PAR LA CLASSE - Détails

Abrégé

A method for fabricating a light emitting diode chip is provided. Firstly, a semiconductor device layer is formed on a substrate. Afterwards, a current spreading layer is formed on a portion of the semiconductor device layer. Then, a current blocking layer and a passivation layer are formed on a portion of the semiconductor device layer not covered by the current spreading layer. Finally, a first electrode is formed on the current blocking layer and the current spreading layer. Moreover, a second electrode is formed on the semiconductor device layer.

Classes IPC  ?

• H01L 33/00 - DISPOSITIFS À SEMI-CONDUCTEURS NON COUVERTS PAR LA CLASSE - Détails

Produits et services

Electric insect killer; electronic blackboard; electronic billboards; computer screenmonitors; scanners; exposed lamp for photocopiers; flash light (luminous signals); light-emitting baton for traffic control; touch image sensors; signal lights; traffic warning devices for safety; light emitting diode; electronic tubes; x-ray tubes; light emitting diode displays; optical tube [photo-sensitive tube]; optical lamps; lighting ballast; lighting controller. Shadowless operation lamps; medical lamps; ultraviolet radiator units for therapeutic purpose; therapeutic apparatus and instruments; infrared radiator units for therapeutic purpose; quartz lamps for medical use; ultraviolet lamps for medical use; x-ray tubes for medical use. Bulb; lights, electric, for Christmas trees; flashlight; searchlight; fluorescent lamp; halogen lamp; little night lamp; lamp tube; illuminating lamp; illumination apparatus; germicidal lamp; luminaire for emergency lighting; car lamps; aquarium lights; lighting apparatus for vehicles; luminous tubes for lighting.

Abrégé

An LED chip includes a substrate, a semiconductor device layer, a wall structure, and a number of electrodes. The semiconductor device layer is disposed on the substrate and includes a first-type doped semiconductor layer disposed on the substrate, an active layer disposed on a portion of the first-type doped semiconductor layer, and a second-type doped semiconductor layer disposed on the active layer and having a first top surface. The wall structure is disposed on the first-type doped semiconductor layer that is not covered by the active layer and surrounds the active layer. Besides, the wall structure has a second top surface higher than the first top surface of the second-type doped semiconductor layer. Additionally, the electrodes are disposed on and electrically connected with the first-type doped semiconductor layer and the second-type doped semiconductor layer.

Classes IPC  ?

• H01L 33/00 - DISPOSITIFS À SEMI-CONDUCTEURS NON COUVERTS PAR LA CLASSE - Détails