Abstract

A method of manufacturing a light-emitting unit includes disposing a plurality of light-emitting diode (LED) chips on a carrier, wherein gaps are between the LED chips. The method includes forming a film on the LED chips and the carrier, and transferring at least one of the LED chips onto a first substrate, wherein the film is disconnected in the gaps adjacent to the at least one LED chip during the transferring the at least one of the LED chips onto the first substrate.

IPC Classes  ?

• H01L 21/683 - Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereofApparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components for supporting or gripping
• H01L 25/075 - Assemblies consisting of a plurality of individual semiconductor or other solid-state devices all the devices being of a type provided for in a single subclass of subclasses , , , , or , e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group
• H10H 20/01 - Manufacture or treatment
• H10H 20/851 - Wavelength conversion means
• H10H 20/857 - Interconnections, e.g. lead-frames, bond wires or solder balls

Abstract

A light emitting diode device includes a driving chip, a first insulating layer, a second insulating layer, a first redistribution layer, a second redistribution layer, a plurality of light emitting diodes, and an encapsulating layer. The first insulating layer covers the driving chip. The second insulating layer is disposed under the first insulating layer. The first redistribution layer is disposed on the first insulating layer and electrically connects to the driving chip. The second redistribution layer is disposed between the first insulating layer and the second insulating layer and electrically connected to the first redistribution layer. The plurality of light emitting diodes is bonded to the first redistribution layer. The encapsulating layer covers the first redistribution layer and the plurality of light emitting diodes.

IPC Classes  ?

• H10H 20/857 - Interconnections, e.g. lead-frames, bond wires or solder balls
• H01L 25/16 - Assemblies consisting of a plurality of individual semiconductor or other solid-state devices the devices being of types provided for in two or more different subclasses of , , , , or , e.g. forming hybrid circuits
• H10H 20/814 - Bodies having reflecting means, e.g. semiconductor Bragg reflectors
• H10H 20/82 - Roughened surfaces, e.g. at the interface between epitaxial layers
• H10H 20/853 - Encapsulations characterised by their shape

Abstract

The disclosure provides a light emitting diode structure, including a substrate, a first semiconductor layer, a light emitting layer, a second semiconductor layer, a semiconductor contacting layer, a first conductive layer and a second conductive layer. The first semiconductor layer is disposed on the substrate. The first semiconductor includes a first thickness structure and a second thickness structure, in which the first thickness structure is thicker than the second thickness structure. The light emitting layer is disposed on the first thickness structure. The second semiconductor layer is disposed on the light emitting layer The semiconductor contacting layer is disposed on the second thickness structure, in which the vertical projections of the semiconductor contacting layer and the light emitting layer on the substrate don't overlap nor contact. A doping type of the semiconductor contacting layer is the same as the first semiconductor layer.

IPC Classes  ?

• H10H 20/857 - Interconnections, e.g. lead-frames, bond wires or solder balls
• H10H 20/825 - Materials of the light-emitting regions comprising only Group III-V materials, e.g. GaP containing nitrogen, e.g. GaN

Abstract

A light emitting diode (LED) package includes a substrate, at least one micro LED chip, a black material layer, and a transparent material layer. The substrate has a width ranging from 100 micrometers to 1000 micrometers. The at least one micro LED chip is electrically mounted on a top surface of the substrate and has a width ranging from 1 micrometer to 100 micrometers. The black material layer covers the top surface of the substrate to expose the at least one micro LED chip. The transparent material layer covers the at least one micro LED chip and the black material layer.

IPC Classes  ?

• H10H 20/85 - Packages
• H01L 21/02 - Manufacture or treatment of semiconductor devices or of parts thereof
• H10D 62/10 - Shapes, relative sizes or dispositions of the regions of the semiconductor bodiesShapes of the semiconductor bodies
• H10H 20/852 - Encapsulations

Abstract

A light-emitting element includes a first reflection layer having a first reflectance; a second reflection layer having a second reflectance greater than the first reflectance; a first opening in the second reflection layer; a multi-layer light-emitting structure disposed between the first reflection layer and the second reflection layer; a light-transmitting semiconductor layer disposed on the first reflection layer and having an upper light-extracting surface, wherein the first reflection layer is closer to the upper light-extracting surface than the second reflection layer; and a first conductive pad disposed in the first opening, electrically connected to the multi-layer light-emitting structure; wherein the first reflection layer includes a Bragg reflector containing semiconductor material.

IPC Classes  ?

• H10H 20/80 - Constructional details
• H10H 20/814 - Bodies having reflecting means, e.g. semiconductor Bragg reflectors
• H10H 20/819 - Bodies characterised by their shape, e.g. curved or truncated substrates

Abstract

A detection device includes a substrate, a light-emitter, and a light receiver. The substrate includes a first surface area and a second surface area, in which the first surface area has a first reflectance greater than a second reflectance of the second surface area. The light emitter is disposed on the first surface area, and the light receiver is disposed on the second surface area. The light receiver has a third reflectance which is substantially the same as the second reflectance of the second surface area.

IPC Classes  ?

• H10F 55/255 - Radiation-sensitive semiconductor devices covered by groups , or being structurally associated with electric light sources and electrically or optically coupled thereto wherein the electric light source controls the radiation-sensitive semiconductor devices, e.g. optocouplers wherein the radiation-sensitive devices and the electric light source are all semiconductor devices formed in, or on, a common substrate
• A61B 5/00 - Measuring for diagnostic purposes Identification of persons
• A61B 5/1455 - Measuring characteristics of blood in vivo, e.g. gas concentration or pH-value using optical sensors, e.g. spectral photometrical oximeters
• H10F 77/00 - Constructional details of devices covered by this subclass
• H10F 77/40 - Optical elements or arrangements
• H10F 77/50 - Encapsulations or containers

Abstract

A semiconductor chip includes a semiconductor stack, a passivation layer, a first electrode and a second electrode. The semiconductor stack includes a top surface, a bottom surface opposite to the top surface, and a sidewall between the top surface and the bottom surface. The passivation layer covers the sidewall of the semiconductor stack. The first electrode and the second electrode are respectively located on the top surface and the bottom surface of the semiconductor stack. When viewing from the bottom surface, a plan-view contour of the passivation layer surrounds a plan-view contour of the semiconductor stack and includes a plurality of protruding portions protrude outwards from the plan-view contour of the passivation layer.

IPC Classes  ?

• H10H 20/831 - Electrodes characterised by their shape
• H10H 20/85 - Packages
• H10H 20/857 - Interconnections, e.g. lead-frames, bond wires or solder balls

Abstract

A light emitting element package includes a first substrate, at least one light emitting element, an encapsulation layer, and a plurality of conductive pads. The first substrate has an upper surface and a lower surface opposite to each other, in which an edge of the lower surface has a notch. The at least one light emitting element is disposed on the upper surface of the first substrate, in which the light emitting element has a positive electrode and a negative electrode. The encapsulation layer covers the light emitting element. The plurality of conductive pads are disposed on the lower surface of the first substrate and electrically connected to the positive electrode and the negative electrode of the light emitting element, respectively.

IPC Classes  ?

• H01L 33/62 - Arrangements for conducting electric current to or from the semiconductor body, e.g. leadframe, wire-bond or solder balls
• H01L 27/15 - Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components with at least one potential-jump barrier or surface barrier, specially adapted for light emission
• H01L 33/00 - SEMICONDUCTOR DEVICES NOT COVERED BY CLASS - Details thereof
• H01L 33/54 - Encapsulations having a particular shape

Abstract

A light-emitting element includes light-emitting diode (LED) chip with a first and second surface opposite to each other, and sidewalls connecting the first and second surface. The light-emitting element further includes an insulation structure covering the first surface, the second surface, and the sidewalls. The light-emitting element further includes multiple connection pads disposed on the first surface. In a cross-sectional view, the insulation layer includes a plurality of protrusion portions disposed on the sidewalls. Each of the protrusion portions protrudes from the sidewalls and extends laterally with a protrusion length. The protrusion length of one of the plurality of protrusion portions is different from that of another one of the plurality of protrusion portions.

IPC Classes  ?

• H01L 33/54 - Encapsulations having a particular shape
• H01L 25/075 - Assemblies consisting of a plurality of individual semiconductor or other solid-state devices all the devices being of a type provided for in a single subclass of subclasses , , , , or , e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group
• H01L 25/16 - Assemblies consisting of a plurality of individual semiconductor or other solid-state devices the devices being of types provided for in two or more different subclasses of , , , , or , e.g. forming hybrid circuits
• H01L 33/00 - SEMICONDUCTOR DEVICES NOT COVERED BY CLASS - Details thereof

Abstract

A light-emitting diode (LED) display device, includes: a plurality of displaying basic-units, each of the displaying basic-units having a plurality of sub-pixel regions, on which a plurality of red LED units, a plurality of green LED units, a plurality of blue LED units, and a plurality of white LED units are selectively provided; and a control unit, performing an image reconstruction process for an input image, thereby making each of the displaying basic-units display color, color grayscale, or black-and-white grayscale; wherein in each of the displaying basic-units, the quantity of green LED units is more than or equal to the quantity of white LED units, and the quantity of green LED units is more than the quantity of blue LED units or red LED units.

IPC Classes  ?

• G09G 3/32 - Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes for presentation of an assembly of a number of characters, e.g. a page, by composing the assembly by combination of individual elements arranged in a matrix using controlled light sources using electroluminescent panels semiconductive, e.g. using light-emitting diodes [LED]

Abstract

A display device includes a plurality of first packages and a plurality of second packages. The first packages are arranged on the substrate and each of the first packages includes a plurality of first light-emitting chips. The second packages are arranged on the substrate and each of the second packages includes a plurality of second light-emitting chips. The first packages and the second packages are alternately arranged in a first direction, and an arrangement of the first light-emitting chips of the first packages is different from an arrangement of the second light-emitting chips of the second packages.

IPC Classes  ?

• H01L 25/13 - Assemblies consisting of a plurality of individual semiconductor or other solid-state devices all the devices being of a type provided for in a single subclass of subclasses , , , , or , e.g. assemblies of rectifier diodes the devices having separate containers the devices being of a type provided for in group

Abstract

A light-emitting device includes a circuit substrate, a wall, a light-emitting diode chip, a fluorescent resin and a plate. The wall is formed on the circuit substrate to form a concave cup with properties of light transmission and reflection, and has a height of the wall is H2. The light emitting diode chip is die-bonded on the circuit substrate in the concave cup and a height of the light-emitting diode chip is H1. The fluorescent resin is filled in the concave cup and covered over the light-emitting diode chip. The plate is covered on the fluorescent resin and equipped with properties of light transmission and reflection. A maximum thickness of the plate is H3, wherein H3=A*(H2/H1)+B, a value of A ranges from 10.5 to 15.5, and a value of B ranges from 0.05 to 131.5.

IPC Classes  ?

• H01L 33/50 - Wavelength conversion elements
• H01L 33/48 - SEMICONDUCTOR DEVICES NOT COVERED BY CLASS - Details thereof characterised by the semiconductor body packages

Abstract

A light-emitting diode structure includes a light-emitting part and a reflective part. The light-emitting part has a light-emitting surface. The reflective part is on the light-emitting part opposite to the light-emitting surface. The reflective part is a gradient distributed Bragg reflection structure and includes a plurality of first dielectric layers and a plurality of second dielectric layers. The second dielectric layers have a refractive index different from that of the first dielectric layer, and are alternately stacked with the first dielectric layers. Each of the first dielectric layers has a different optical thickness, and each of the second dielectric layers has a different optical thickness. The optical thicknesses of the first dielectric layers and the second dielectric layers vary in a gradient way away from the light-emitting part.

IPC Classes  ?

• H01L 33/46 - Reflective coating, e.g. dielectric Bragg reflector

Abstract

A light emitting diode structure includes a metal reflective layer, a first transparent electrically-conductive layer, a dielectric layer, second transparent electrically-conductive layers, a first type semiconductor layer, an active layer and a second type semiconductor layer. The metal reflective layer has first concave sections. The first transparent electrically-conductive layer is conformally formed over the first concave sections of the metal reflective layer. The dielectric layer is formed over the first transparent electrically-conductive layer and has through holes to expose the first transparent electrically-conductive layer. The second transparent electrically-conductive layers are formed over the dielectric layer, and connected with the first transparent electrically-conductive layer via the through holes. Each second transparent electrically-conductive layer is connected to the first transparent electrically-conductive layer to form a T-shaped cross section in each first concave section.

IPC Classes  ?

• H01L 33/10 - SEMICONDUCTOR DEVICES NOT COVERED BY CLASS - Details thereof characterised by the semiconductor bodies with a light reflecting structure, e.g. semiconductor Bragg reflector

Abstract

A light-emitting device includes a substrate, a circuit layer, a plurality of conductive connection portions, and a plurality of semiconductor light-emitting sources. The circuit layer on the substrate having a plurality of conductive structures, in which each conductive structure includes at least one bonding pad. An interval is between two adjacent ones of the conductive structures. Each conductive connection portion is correspondingly located on each bonding pad. Each semiconductor light-emitting source crosses each interval and contacts two adjacent ones of the conductive connection portions, such that the semiconductor light-emitting sources are respectively electrically connected to two adjacent ones of the conductive structures.

IPC Classes  ?

• H01L 33/62 - Arrangements for conducting electric current to or from the semiconductor body, e.g. leadframe, wire-bond or solder balls
• H01L 25/075 - Assemblies consisting of a plurality of individual semiconductor or other solid-state devices all the devices being of a type provided for in a single subclass of subclasses , , , , or , e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group

Abstract

A light conversion material includes a general formula and complies with a condition. The general formula is MmAaCcEe:ESxREy. M is at least one element selected from a group, and 2≤m≤3. A is at least one element selected from a group, and 0.01≤a≤1. C is at least one element selected from a group, and 1≤c≤9, E is at least one element selected from a group, and 5≤e≤7. ES is at least one element selected from a group, and 0≤x≤3. RE is at least one element selected from a group, and 0≤y≤3. The condition (2) is m+x+y=3.

IPC Classes  ?

• H01L 33/50 - Wavelength conversion elements
• H01L 33/00 - SEMICONDUCTOR DEVICES NOT COVERED BY CLASS - Details thereof
• G02F 1/13357 - Illuminating devices

Goods & Services

chip scale package diodes; near chip scale package diodes; SMD (surface-mount devices) type lighting emitter diodes; multi-chip lighting emitter diodes; diodes; lighting emitter diodes.

Abstract

An illumination device includes a rectifier circuit, M light-emitting modules, and a control module. The rectifier circuit has a positive output terminal and a negative output terminal, and generates a driving voltage between the positive output terminal and the negative output terminal according to an input power. The M light-emitting modules are coupled between the positive output terminal and the negative output terminal. Each of the M light-emitting modules has a conduction voltage, and includes a light-emitting unit that includes at least one light-emitting diode. The control module is coupled between the rectifier circuit and the M light-emitting modules, and controls the M light-emitting modules to dynamically form S light-emitting diode strings coupled in parallel with each other. A number of the light-emitting units in each of the S light-emitting diode strings is N, in which S×N=M, where M, S, N are positive integers.

IPC Classes  ?

• H05B 37/00 - Circuit arrangements for electric light sources in general
• H05B 33/08 - Circuit arrangements for operating electroluminescent light sources

Abstract

An epitaxial structure includes a substrate, a first epitaxial layer and a second epitaxial layer. The substrate has a surface, and the first epitaxial layer is disposed over the substrate and defines a plurality of slanting air voids tapering away from the substrate and an opening over each of the slanting air voids. The second epitaxial layer is disposed on the first epitaxial layer and collectively defines the slanting air voids in a shape of trapezoid with the surface and the first epitaxial layer.

IPC Classes  ?

• H01L 33/20 - SEMICONDUCTOR DEVICES NOT COVERED BY CLASS - Details thereof characterised by the semiconductor bodies with a particular shape, e.g. curved or truncated substrate
• H01L 33/02 - SEMICONDUCTOR DEVICES NOT COVERED BY CLASS - Details thereof characterised by the semiconductor bodies
• H01L 33/00 - SEMICONDUCTOR DEVICES NOT COVERED BY CLASS - Details thereof
• H01L 33/12 - SEMICONDUCTOR DEVICES NOT COVERED BY CLASS - Details thereof characterised by the semiconductor bodies with a stress relaxation structure, e.g. buffer layer
• H01L 21/02 - Manufacture or treatment of semiconductor devices or of parts thereof
• C30B 23/04 - Pattern deposit, e.g. by using masks
• C30B 25/04 - Pattern deposit, e.g. by using masks
• C30B 29/40 - AIIIBV compounds

Abstract

An epitaxial structure includes a substrate, a first epitaxial layer and a second epitaxial layer. The substrate has a surface, and the first epitaxial layer is disposed over the substrate and defines a plurality of stepped air voids and an opening over each of the stepped air voids. The second epitaxial layer is disposed on the first epitaxial layer and collectively defines the stepped air voids with the surface and the first epitaxial layer.

IPC Classes  ?

• H01L 33/20 - SEMICONDUCTOR DEVICES NOT COVERED BY CLASS - Details thereof characterised by the semiconductor bodies with a particular shape, e.g. curved or truncated substrate
• H01L 33/02 - SEMICONDUCTOR DEVICES NOT COVERED BY CLASS - Details thereof characterised by the semiconductor bodies
• H01L 33/00 - SEMICONDUCTOR DEVICES NOT COVERED BY CLASS - Details thereof
• H01L 33/12 - SEMICONDUCTOR DEVICES NOT COVERED BY CLASS - Details thereof characterised by the semiconductor bodies with a stress relaxation structure, e.g. buffer layer
• H01L 21/02 - Manufacture or treatment of semiconductor devices or of parts thereof
• C30B 23/04 - Pattern deposit, e.g. by using masks
• C30B 25/04 - Pattern deposit, e.g. by using masks
• C30B 29/40 - AIIIBV compounds

Abstract

A light-emitting diode (LED) package structure includes a lead frame, a LED chip, a package body, N opaque spacer and N+1 encapsulating glues. The LED chip is disposed on the lead frame; the package body covers the lead frame and exposes the LED chip. The package body has an accommodation space, divided by the N opaque spacers disposed on the LED chip into N+1 chambers. The N+1 encapsulating glues are filled into the N+1 chambers, where N is a natural number.

IPC Classes  ?

• H01L 33/00 - SEMICONDUCTOR DEVICES NOT COVERED BY CLASS - Details thereof
• H01L 33/50 - Wavelength conversion elements
• H01L 33/56 - Materials, e.g. epoxy or silicone resin

Abstract

A light emitting diode (LED) structure includes a substrate, an LED element, a reverse current protection element, a third conductor, and a fourth conductor. The LED element includes a first N-type semiconductor layer, a first lighting layer, a first P-type semiconductor layer, a first transparent conductive layer, a first electrode, and a second electrode. The reverse current protection element is located on the substrate and surrounds the LED element. The reverse current protection element includes a stack layer, a first conductor, and a second conductor. The stack layer is formed on the substrate by sequentially stacking a second N-type semiconductor layer, a second lighting layer, and a second P-type semiconductor layer. The third conductor is electrically connected to the first conductor and the second electrode. The fourth conductor is electrically connected to the second conductor and the first electrode.

IPC Classes  ?

• H01L 33/00 - SEMICONDUCTOR DEVICES NOT COVERED BY CLASS - Details thereof
• H01L 27/15 - Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components with at least one potential-jump barrier or surface barrier, specially adapted for light emission

Abstract

An LED lighting module includes a support board with a first LED and a second LED thereon. The wavelength of light emitted by the first LED is different from that of light emitted by the second LED. The height of the first LED is different from that of the second LED for preventing the emitting light of the first LED absorbed by the wavelength conversion layer of the second LED.

IPC Classes  ?

• H01L 33/00 - SEMICONDUCTOR DEVICES NOT COVERED BY CLASS - Details thereof
• H01L 25/075 - Assemblies consisting of a plurality of individual semiconductor or other solid-state devices all the devices being of a type provided for in a single subclass of subclasses , , , , or , e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group

Abstract

A light emitting device comprising a carrier, a first and a second reflective layers, a first and a second micro-structures, a LED package device, a light guide device and a light directing cover is provided. The carrier comprises an upper plate and a lower plate each having a first surface and a second surface. The lower plate has a through hole. The first and second reflective layers are formed on the edges of the second surface of the upper plate and the first surface of the lower plate, respectively. The first and second micro-structures are formed on the edges of the second surface of the upper plate and the first surface of the lower plate, respectively. The LED package device is disposed below the through hole. The light guide device is connected to the LED package device. The light directing cover surrounds the light guide device.

IPC Classes  ?

• H01L 33/00 - SEMICONDUCTOR DEVICES NOT COVERED BY CLASS - Details thereof
• F21K 99/00 - Subject matter not provided for in other groups of this subclass
• F21V 3/04 - GlobesBowlsCover glasses characterised by materials, surface treatments or coatings
• F21V 5/00 - Refractors for light sources
• F21V 7/05 - Optical design plane
• F21Y 101/02 - Miniature, e.g. light emitting diodes (LED)
• F21V 8/00 - Use of light guides, e.g. fibre optic devices, in lighting devices or systems

Abstract

A phosphor composition is provided. The phosphor composition comprises a phosphor nucleus and a hydrophobic layer. The hydrophobic layer is bonded on a surface of the phosphor nucleus and consists of an organic compound with a hydrophobic functional group.

IPC Classes  ?

• C09K 11/77 - Luminescent, e.g. electroluminescent, chemiluminescent, materials containing inorganic luminescent materials containing rare earth metals
• C09K 11/65 - Luminescent, e.g. electroluminescent, chemiluminescent, materials containing inorganic luminescent materials containing carbon
• H05B 33/10 - Apparatus or processes specially adapted to the manufacture of electroluminescent light sources
• C09K 11/02 - Use of particular materials as binders, particle coatings or suspension media therefor

Abstract

A lighting device includes a light bar, two reflective covers and a reflective plate. The two reflective covers respectively connected to two opposite long sides of the light bar. The reflective plate is positioned at the light output side of the light bar. The reflective surface of the reflective plate faces the light output side of the light bar. The reflective plate has a wavelength conversion layer positioned on the reflective surface thereof. The light bar emits a first wavelength light, and a portion of the first wavelength light is converted by the wavelength conversion layer into a second wavelength light which is reflected by the reflective plate to the two reflective covers, while the remaining non-converted first wavelength light is reflected by the reflective plate to the two reflective covers and mixed with the second wavelength lights to give a light with a predetermined spectrum.

IPC Classes  ?

• F21V 13/08 - Combinations of only two kinds of elements the elements being filters or photoluminescent elements and reflectors
• F21V 13/12 - Combinations of only three kinds of elements

Abstract

An illumination apparatus includes a substrate, an illumination element and a lens structure. The illumination element is disposed on the substrate. The lens structure is disposed above the illumination element, and includes a lens body and a plurality of lens stands. The lens body is positioned above the illumination element. The lens stands are disposed on the bottom of the lens body. The substrate has a plurality of tunnels are around the illumination element. The lens stands respectively insert into the tunnels, so that the lens body is fastened on the substrate.

IPC Classes  ?

• H01J 5/16 - Optical or photographic arrangements structurally combined with the vessel
• H01J 61/40 - Devices for influencing the colour or wavelength of the light by light-filtersDevices for influencing the colour or wavelength of the light by coloured coatings in or on the envelope
• H01K 1/26 - ScreensFilters
• H01K 1/30 - EnvelopesVessels incorporating lenses
• F21V 8/00 - Use of light guides, e.g. fibre optic devices, in lighting devices or systems
• H05K 3/00 - Apparatus or processes for manufacturing printed circuits
• H05K 1/18 - Printed circuits structurally associated with non-printed electric components

Abstract

A Light emitting diode (LED) includes a substrate, a LED chip, a wavelength conversion layer, a lens and a reflective layer. The LED chip is mounted on the substrate. The wavelength conversion layer covers the top surface of the LED chip and exposes the lateral surface of the LED chip. The lens is disposed on the substrate and encloses the LED chip and the wavelength conversion layer. The reflective layer is disposed on the lens for reflecting the light emitted from the lateral surface of the LED chip.

IPC Classes  ?

• H01L 21/33 - Multistep processes for the manufacture of devices of the bipolar type, e.g. diodes, transistors, thyristors the devices comprising three or more electrodes

Abstract

A manufacturing process of a vertical type solid state light emitting device is provided. A substrate is provided. M metal nitride buffer layer is formed on the substrate, and a breakable structure containing M metal droplet structures is formed on the buffer layer. A first type semiconductor layer, an active layer and a second type semiconductor layer are sequentially formed on the breakable structure. A second type electrode is formed on the second type semiconductor layer. The first type semiconductor layer, the active layer, the second type semiconductor layer and the second type electrode are stacked to form a light emitting stacking structure. The breakable structure is damaged to separate from the light emitting stacking structure, so that a surface of the first type semiconductor layer of the light emitting stacking structure is exposed. A first type electrode is formed on the surface of the first type semiconductor layer.

IPC Classes  ?

• H01L 21/00 - Processes or apparatus specially adapted for the manufacture or treatment of semiconductor or solid-state devices, or of parts thereof
• H01L 21/30 - Treatment of semiconductor bodies using processes or apparatus not provided for in groups
• H01L 21/46 - Treatment of semiconductor bodies using processes or apparatus not provided for in groups
• H01L 21/02 - Manufacture or treatment of semiconductor devices or of parts thereof
• H01L 33/32 - Materials of the light emitting region containing only elements of group III and group V of the periodic system containing nitrogen
• H01L 33/00 - SEMICONDUCTOR DEVICES NOT COVERED BY CLASS - Details thereof

Abstract

The present invention provides a light emitting diode (LED) element which comprises a substrate, a buffer layer, a plurality of nano-spheres and a light emitting structure. The substrate comprises a plurality of grooves arranged at intervals on a surface of the substrate. The buffer layer is disposed on the surface of the substrate where the grooves being formed, wherein the grooves are disposed between the substrate and the buffer layer. The nano-spheres are received in the grooves, so each groove is provided with at least a nano-sphere. The light emitting structure is disposed on the buffer layer.

IPC Classes  ?

• H01L 33/58 - Optical field-shaping elements

Abstract

A lighting device is provided. The lighting device includes an optical reflection plate, a light holder, and at least one light source. The optical reflection plate includes a non-reflective region located in the center of the optical reflection plate, and a plurality of reflection regions surrounding the non-reflective region in sequence. The light holder is located on the non-reflective region of the optical reflection plate and includes a circle side-light concave portion. A light-emitting opening of the side-light concave portion faces to the reflection regions. The light source is located in the side-light concave portion of the light holder. When the light source emits light, the light emitted from the light source is reflected by the reflection regions.

IPC Classes  ?

• F21V 7/00 - Reflectors for light sources

Abstract

A plant illumination apparatus includes a light source module including a first light source and a second light source generating lights having different wavelengths, an environment-detecting module detecting an external environment to obtain a real-time environment parameter, and a control module connected to the light source module and the environment-detecting module. The control module includes a processor unit and a storage unit storing a database of plant growing environment parameters. The processor unit loads at least one preset growing environment parameter corresponding to a plant growth timing from the database of plant growing environment parameters, and compares the preset growing environment parameter with the real-time environment parameter to output at least one comparison result. The processor unit adjusts the first light source and the second light source according to the comparison result, so that an adjusted environment parameter matches the preset growing environment parameter.

IPC Classes  ?

• H05B 37/02 - Controlling

Abstract

A light component includes a printed circuit board and a plurality of lighting emitting diodes (LEDs). The printed circuit board has a metal substrate. The LEDs are disposed on the printed circuit board, wherein two opposite edges of the metal substrate protrude out and are bent towards the LEDs to form two metal clamps.

IPC Classes  ?

• H01L 31/12 - SEMICONDUCTOR DEVICES NOT COVERED BY CLASS - Details thereof structurally associated with, e.g. formed in or on a common substrate with, one or more electric light sources, e.g. electroluminescent light sources, and electrically or optically coupled thereto
• H01L 21/00 - Processes or apparatus specially adapted for the manufacture or treatment of semiconductor or solid-state devices, or of parts thereof
• F21V 8/00 - Use of light guides, e.g. fibre optic devices, in lighting devices or systems

Abstract

A manufacturing method of a solid state light emitting element is provided. A plurality of protrusion structures separated to each other are formed on a first substrate. A buffer layer is formed on the protrusion structures and fills the gaps between protrusion structures. An epitaxial growth layer is formed on the buffer layer to form a first semiconductor stacking structure. The first semiconductor stacking structure is inverted to a second substrate, so that the first semiconductor epitaxial layer and the second substrate are connected to form a second semiconductor stacking structure. The buffer layer is etched by a first etchant solution to form a third semiconductor stacking structure. A second etchant solution is used to permeate through the gaps between the protrusion structures, so that the protrusion structures are etched completely. The first substrate is removed from the third semiconductor stacking structure to form a fourth semiconductor stacking structure.

IPC Classes  ?

• H01L 51/50 - Solid state devices using organic materials as the active part, or using a combination of organic materials with other materials as the active part; Processes or apparatus specially adapted for the manufacture or treatment of such devices, or of parts thereof specially adapted for light emission, e.g. organic light emitting diodes (OLED) or polymer light emitting devices (PLED)
• H01L 51/52 - Solid state devices using organic materials as the active part, or using a combination of organic materials with other materials as the active part; Processes or apparatus specially adapted for the manufacture or treatment of such devices, or of parts thereof specially adapted for light emission, e.g. organic light emitting diodes (OLED) or polymer light emitting devices (PLED) - Details of devices
• H01L 51/54 - Selection of materials
• H01L 51/56 - Processes or apparatus specially adapted for the manufacture or treatment of such devices or of parts thereof

Abstract

A light source cooling device includes a light source module, an inner casing, an outer casing, and a plurality of spacers. The inner casing encloses an accommodation space for accommodating the light source module. The outer casing surrounds the inner casing and has a gap included between an inner wall of the inner casing and the outer casing, wherein the inner casing and the outer casing are made of materials with different thermal conductivity coefficients. The inner wall of the inner casing, an outer wall of the outer casing, and the spacers together form a plurality of heat-dissipating passages. The inner wall absorbs the heat generated by the light source module and generates a temperature gradient between the inner wall and the outer wall, which assists in creating thermal convection to exhaust the heat.

IPC Classes  ?

• F21V 29/00 - Protecting lighting devices from thermal damageCooling or heating arrangements specially adapted for lighting devices or systems

Abstract

A package structure of semiconductor light emitting element is provided. The package structure of semiconductor light emitting element includes a substrate, a light emitting element and a transparent conductive board. A first electrode and a second electrode are disposed on the substrate. The light emitting element is disposed on the substrate and between the first electrode and the second electrode. A first bonding pad and a second bonding pad are disposed on the light emitting element. The transparent conductive board has a first surface and a second surface opposite to the first surface. The second surface of the transparent conductive board is located over the light emitting element for electrically connecting the first electrode and the first bonding pad and electrically connecting the second electrode and the second bonding pad.

IPC Classes  ?

• H01L 33/00 - SEMICONDUCTOR DEVICES NOT COVERED BY CLASS - Details thereof

Abstract

th solid state emitting elements of each row of the solid state light emitting element series are electrically connected to a first conductive line and a second conductive line located on the edges of the first surface via the first type electrode pad and the second type electrode pad, respectively. The first conductive line and the second conductive line are physically disconnected.

IPC Classes  ?

• H01L 33/48 - SEMICONDUCTOR DEVICES NOT COVERED BY CLASS - Details thereof characterised by the semiconductor body packages

Abstract

A lighting module is provided. The lighting module comprises a circuit board, a first light source array, a second light source array, and a plurality of first light guides. The first light source array is disposed on the circuit board and comprises a plurality of first solid light emitting semiconductors providing a first light with a first wavelength. The second light source array is disposed on the circuit board and comprises a plurality of second solid light emitting semiconductors providing a second light with a second wavelength. The first light guides are disposed on the circuit board and between the second solid light emitting semiconductors. The second solid light emitting semiconductors are located on a side of each of the first light guides, respectively, so that the second light emitted by the second solid light emitting semiconductors enters the first light guides to be uniformly emitted.

IPC Classes  ?

• F21V 7/04 - Optical design

Abstract

A LED (Light Emitting Diode) bulb structure includes a base, a plurality of fins and a shell. One end of the base is electrically connected to a power source, and the other end of the base is used for holding a LED light source. The fins are disposed on a surface of the base. The shell encloses the fins, and the shell includes a plurality of first heat-dissipation holes and a plurality of second heat-dissipation holes. The first heat-dissipation holes are arranged around the shell and corresponding to the fins for allowing airflow entering the first heat-dissipation holes to directly pass through each of the fins corresponding to each of the first heat-dissipation holes. The second heat-dissipation holes are arranged around the shell and disposed above the first heat-dissipation holes for enabling the first heat-dissipation holes and the second heat-dissipation holes to conduct thermal convection.

IPC Classes  ?

• F21V 29/00 - Protecting lighting devices from thermal damageCooling or heating arrangements specially adapted for lighting devices or systems

Abstract

A semiconductor light emitting structure including a substrate, a second type electrode layer, a reflecting layer, an insulating layer, a first type electrode layer, a first type semiconductor layer, an active layer and a second type semiconductor layer is provided. The second type electrode layer formed on the substrate has a current spreading grating formed by several conductive pillars and conductive walls, which are staggered and connected to each other. The reflecting layer and the insulating layer are formed on the second type electrode layer in sequence, and cover each conductive pillar and each conductive wall. The first type electrode layer, the first type semiconductor layer and the active layer are formed on the insulating layer in sequence. The second type semiconductor layer is formed on the active layer, and covers each conductive pillar and each conductive wall.

IPC Classes  ?

• H01L 29/18 - Selenium or tellurium only, apart from doping materials or other impurities

Abstract

A light-emitting diode has a metal structure, a light-emitting chip, and a bowl structure. The metal structure has a platform and a heat sink. The platform has a top face, a first side, and a second side opposite to the first side. A first reflector and a second reflector respectively extend from the first side and the second side. The heat sink extends below the top face and has a drop from the bottom surfaces of the first reflector and the second reflector. The light-emitting chip is disposed on the top face. The bowl structure covers the outer surface of the metal structure and shields the bottom surfaces of the first reflector and the second reflector. A thermal dispassion surface of the heat sink is exposed from the bowl structure. An inner surface of bowl wall has a plurality of reflection structures to promote the light extraction efficiency.

IPC Classes  ?

• H01L 33/00 - SEMICONDUCTOR DEVICES NOT COVERED BY CLASS - Details thereof
• H01L 21/00 - Processes or apparatus specially adapted for the manufacture or treatment of semiconductor or solid-state devices, or of parts thereof

Abstract

A wafer-level packaging process of a light-emitting diode is provided. First, a semiconductor stacked layer is formed on a growth substrate. A plurality of barrier patterns and a plurality of reflective layers are then formed on the semiconductor stacked layer, wherein each reflective layer is surrounded by one of the barrier patterns. A first bonding layer is then formed on the semiconductor stacked layer to cover the barrier patterns and the reflective layers. Thereafter, a carrying substrate having a plurality of second bonding layers and a plurality of conductive plugs electrically insulated from each other is provided, and the first bonding layer is bonded with the second bonding layer. The semiconductor stacked layer is then separated from the growth substrate. Next, the semiconductor stacked layer is patterned to form a plurality of semiconductor stacked patterns. Next, each semiconductor stacked pattern is electrically connected to the conductive plug.

IPC Classes  ?

• H01L 21/00 - Processes or apparatus specially adapted for the manufacture or treatment of semiconductor or solid-state devices, or of parts thereof

Abstract

A light-emitting diode chip structure including a conductive substrate, a semiconductor stacking layer and a patterned seed crystal layer is provided. The conductive substrate has a surface. The surface has a first region and a second region alternately distributed over the surface. The semiconductor stacking layer is disposed on the conductive substrate, and the surface of the conductive substrate faces the semiconductor stacking layer. The patterned seed crystal layer is disposed on the first region of the surface of the conductive substrate and between the conductive substrate and the semiconductor stacking layer. The patterned seed crystal layer separates the semiconductor stacking layer from the first region. The semiconductor stacking layer covers the patterned seed crystal layer and the second region, and is electrically connected to the conductive substrate through the second region. A fabrication method of the light-emitting diode chip structure is also provided.

IPC Classes  ?

• H01L 33/20 - SEMICONDUCTOR DEVICES NOT COVERED BY CLASS - Details thereof characterised by the semiconductor bodies with a particular shape, e.g. curved or truncated substrate

Abstract

A point light source includes a light-emitting portion, a first lead and a second lead. The first lead and the second lead are electrically connected to the light-emitting portion. The first lead and the second lead respectively have a wedging portion. The wedging portions can be matched with each other. A light source module using the point light source is also provided. The light source module includes at least one light source assembly. Each light source assembly includes a plurality of the point light sources connected in series. Adjacent two point light sources are wedged to each other in series by a combination of the wedging portions of the adjacent first lead and second lead.

IPC Classes  ?

• F21V 5/00 - Refractors for light sources
• F21S 4/00 - Lighting devices or systems using a string or strip of light sources
• H01L 33/62 - Arrangements for conducting electric current to or from the semiconductor body, e.g. leadframe, wire-bond or solder balls

Abstract

A light emitting diode and a fabricating method thereof are provided. A first-type semiconductor layer, a light emitting layer and a second-type semiconductor layer with a first surface are sequentially formed a substrate. Next, the first surface is treated during a surface treatment process to form a current-blocking region which extends from the first surface to the light emitting layer to a depth of 1000 angstroms. Afterward, a first electrode is formed above the current-blocking region of the second-type semiconductor layer, and a second electrode is formed to electrically contact to the first-type semiconductor layer. Since the current-blocking region is formed with a determined depth within the second-type semiconductor layer, the light extraction efficiency of the light emitting diode may be increased.

IPC Classes  ?

• H01L 33/30 - Materials of the light emitting region containing only elements of group III and group V of the periodic system

Abstract

A method for fabricating a light emitting diode chip is provided. Firstly, a semiconductor device layer is formed on a substrate. Afterwards, a current spreading layer is formed on a portion of the semiconductor device layer. Then, a current blocking layer and a passivation layer are formed on a portion of the semiconductor device layer not covered by the current spreading layer. Finally, a first electrode is formed on the current blocking layer and the current spreading layer. Moreover, a second electrode is formed on the semiconductor device layer.

IPC Classes  ?

• H01L 33/00 - SEMICONDUCTOR DEVICES NOT COVERED BY CLASS - Details thereof

Abstract

A method for fabricating a light emitting diode chip is provided. Firstly, a semiconductor device layer is formed on a substrate. Afterwards, a current spreading layer is formed on a portion of the semiconductor device layer. Then, a current blocking layer and a passivation layer are formed on a portion of the semiconductor device layer not covered by the current spreading layer. Finally, a first electrode is formed on the current blocking layer and the current spreading layer. Moreover, a second electrode is formed on the semiconductor device layer.

IPC Classes  ?

• H01L 21/00 - Processes or apparatus specially adapted for the manufacture or treatment of semiconductor or solid-state devices, or of parts thereof

Abstract

A LED chip including a substrate, a semiconductor device layer, a current blocking layer, a current spread layer, a first electrode and a second electrode is provided. The semiconductor device layer is disposed on the substrate. The current blocking layer is disposed on a part of the semiconductor device layer and includes a current blocking segment and a current distribution adjusting segment. The current spread layer is disposed on a part of the semiconductor device layer and covers the current blocking layer. The first electrode is disposed on the current spread layer, wherein a part of the current blocking segment is overlapped with the first electrode. Contours of the current blocking segment and the first electrode are similar figures. Contour of the first electrode and is within contour of the current blocking segment. The current distribution adjusting segment is not overlapped with the first electrode.

IPC Classes  ?

• H01L 33/00 - SEMICONDUCTOR DEVICES NOT COVERED BY CLASS - Details thereof

Goods & Services

Electronic luminescent display panels; electronic advertisement and messaging display unit with multi-networking (TCP/IP) capabilities and remote connectivity; electrophoretic displays; diodes; light emitting diodes (LEDs); LED and HID light controls; light emitting diode (LED) displays; flat panel display screens; safety equipment, namely, beacon lights, emergency warning lights Electric night lights; solar-powered all-weather lights; electric torches for lighting; miniature light bulbs; vehicle turn-signal light bulbs; LED underwater lights; aquarium lights; crystal lamps; curling lamps (crystal); discharge lamps and their fittings; halogen light bulbs; industrial electric oscillating fans for automatic cleaning of ceilings, light fixtures, ducts and other overhead structures exposed to fibrous airborne contaminants; chandeliers; safety lamps for underground use; vehicle dynamo lamps; ceiling lights; incandescent lamps; projector lamps; lights for use in illuminating signs and displays; lights for vehicles; vehicle headlights; tail lights for vehicles; vehicle turn-signal light bulbs; lighting apparatus for vehicles; guard devices for lighting; parking lights; art designing lights; incandescent lamps and their fittings; reversing lights; lanterns for lighting; table lamps; stop guiding lights; electric lighting fixtures, namely, power failure backup safety lighting; high intensity search lights; air cleaning units containing an air filter, ultraviolet lights and a photocatalytic filter; lodge lights; visor lights; light diffusers; electric luminaires; lighting apparatus, namely, lighting installations; lamps; electric lights for Christmas trees; standard lamps; lighted party-themed decorations, electric light decorative strings; wrist lights for illumination purposes; lighting apparatus for transportation; electric lamps; brake lights for vehicles; spot lights; film stage lighting apparatus; overhead lamps; diving lights; wall lights; bulbs for motorcycle; curling lamps; lamp bulbs; lamp holders; lamp bases; lamp shades; electric discharge tubes for lighting; burners for lamps; reading lights; fog lamps; safety lamps for underground use

Goods & Services

Electronic panels for displaying messages; Advertising boards [mechanical or luminous]; Notice boards [luminous signboards]; Display monitors; Lcd panels; Diodes; Light emitting diodes; Light emitting diode displays; Flashing safety lights; Visors [protective]; Luminous or mechanical road signs; Luminous rotating advertising supports; Traffic control apparatus [luminous]; Traffic guidance installations [luminous signs]; Light-conducting filaments. Lamps; Solar lamps; Fluorescent lighting apparatus; Bulbs for lighting; Light bulbs for directional signals for vehicles; Safety lamps for underground use; Aquarium lights; Curling lamps; Rechargeable torches; Halogen Lamps; Ceiling fans; Chandeliers; Safety lamps; Dynamo lights for vehicles; Ceiling lights; Luminous tubes for lighting; Projector lamps; Headlamp bulbs; Tail lamp bulbs; Automobile lights; Vehicle headlights; Taillights for vehicles; Glass covers for lamps;  Motor vehicle lamps; Light fittings; Lights for automobiles; Table lamps; Lighting installations for air vehicles; Searchlights; Germicidal lamps for purifying air; Light diffusers; Lighting apparatus; Lamps; Christmas tree (Electric lights for-); Standard lamps; Fairy light for festive decoration; Electrical lamps; Brake lights for vehicles; Emergency lamps; Spotlights; Film stage lighting apparatus; Diving lights; Wall lights; Curling lamps; Light bulbs; Lamp holders; Lamp bases;  Lamp shades; Luminous tubes for lighting; Burners for lamps;  Reading lamps; Miners' lamps; Screens for directing light.

Abstract

In a fabricating method of an LED, a first-type doped semiconductor material layer, a light emitting material layer, and a second-type doped semiconductor material layer are sequentially formed on a substrate. The first-type and second-type doped semiconductor material layers and the light emitting material layer are patterned to form a first-type doped semiconductor layer, an active layer, and a second-type doped semiconductor layer. The active layer is disposed on a portion of the first-type doped semiconductor layer. The second-type doped semiconductor layer is disposed on the active layer and has a first top surface. A wall structure is formed on the first-type doped semiconductor layer that is not covered by the active layer, and the wall structure surrounds the active layer and has a second top surface higher than the first top surface of the second-type doped semiconductor layer. Electrodes are formed on the first-type and second-type doped semiconductor layers.

IPC Classes  ?

• H01L 33/02 - SEMICONDUCTOR DEVICES NOT COVERED BY CLASS - Details thereof characterised by the semiconductor bodies

Abstract

The present invention provides a manufacturing method of an LED chip. First, a device layer is formed on a growth substrate, wherein the device layer has a first surface connected to the growth substrate and a second surface. Next, a plurality of first trenches are formed on the second surface of the device layer. Then, a protection layer is formed on the side walls of the first trenches. After that, the second surface is bonded with a supporting substrate and the device layer is then separated from the growth substrate. Further, a plurality of second trenches corresponding to the first trenches are formed in the device layer to form a plurality of LEDs, wherein the second trenches extend from the first surface to the bottom portions of the first trenches. Furthermore, a plurality of electrodes are formed on the first surface of the device layer.

IPC Classes  ?

• H01L 27/15 - Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components with at least one potential-jump barrier or surface barrier, specially adapted for light emission

Abstract

A wafer-level packaging process of a light-emitting diode is provided. First, a semiconductor stacked layer is formed on a growth substrate. A plurality of barrier patterns and a plurality of reflective layers are then formed on the semiconductor stacked layer, wherein each reflective layer is surrounded by one of the barrier patterns. A first bonding layer is then formed on the semiconductor stacked layer to cover the barrier patterns and the reflective layers. Thereafter, a carrying substrate having a plurality of second bonding layers and a plurality of conductive plugs electrically insulated from each other is provided, and the first bonding layer is bonded with the second bonding layer. The semiconductor stacked layer is then separated from the growth substrate. Next, the semiconductor stacked layer is patterned to form a plurality of semiconductor stacked patterns. Next, each semiconductor stacked pattern is electrically connected to the conductive plug.

IPC Classes  ?

• H01L 33/00 - SEMICONDUCTOR DEVICES NOT COVERED BY CLASS - Details thereof

Abstract

A method for fabricating a light emitting diode chip is provided. Firstly, a semiconductor device layer is formed on a substrate. Afterwards, a current spreading layer is formed on a portion of the semiconductor device layer. Then, a current blocking layer and a passivation layer are formed on a portion of the semiconductor device layer not covered by the current spreading layer. Finally, a first electrode is formed on the current blocking layer and the current spreading layer. Moreover, a second electrode is formed on the semiconductor device layer.

IPC Classes  ?

• H01L 33/00 - SEMICONDUCTOR DEVICES NOT COVERED BY CLASS - Details thereof

Goods & Services

Electric insect killer; electronic blackboard; electronic billboards; computer screenmonitors; scanners; exposed lamp for photocopiers; flash light (luminous signals); light-emitting baton for traffic control; touch image sensors; signal lights; traffic warning devices for safety; light emitting diode; electronic tubes; x-ray tubes; light emitting diode displays; optical tube [photo-sensitive tube]; optical lamps; lighting ballast; lighting controller. Shadowless operation lamps; medical lamps; ultraviolet radiator units for therapeutic purpose; therapeutic apparatus and instruments; infrared radiator units for therapeutic purpose; quartz lamps for medical use; ultraviolet lamps for medical use; x-ray tubes for medical use. Bulb; lights, electric, for Christmas trees; flashlight; searchlight; fluorescent lamp; halogen lamp; little night lamp; lamp tube; illuminating lamp; illumination apparatus; germicidal lamp; luminaire for emergency lighting; car lamps; aquarium lights; lighting apparatus for vehicles; luminous tubes for lighting.

Abstract

An LED chip includes a substrate, a semiconductor device layer, a wall structure, and a number of electrodes. The semiconductor device layer is disposed on the substrate and includes a first-type doped semiconductor layer disposed on the substrate, an active layer disposed on a portion of the first-type doped semiconductor layer, and a second-type doped semiconductor layer disposed on the active layer and having a first top surface. The wall structure is disposed on the first-type doped semiconductor layer that is not covered by the active layer and surrounds the active layer. Besides, the wall structure has a second top surface higher than the first top surface of the second-type doped semiconductor layer. Additionally, the electrodes are disposed on and electrically connected with the first-type doped semiconductor layer and the second-type doped semiconductor layer.

IPC Classes  ?

• H01L 33/00 - SEMICONDUCTOR DEVICES NOT COVERED BY CLASS - Details thereof