A method for producing an electronic component comprises steps of: providing a carrier, in which conductor tracks and a contact structure are positioned on a top side of the carrier; removing part of the material of the carrier on the top side of the carrier in order to create a cavity with a recessed top side in a vicinity of the contact structure, such that the contact structure is raised above the recessed top side; positioning a semiconductor chip above the contact structure; and establishing an electrically conductive connection between the contact structure and the semiconductor chip.
H01L 21/48 - Fabrication ou traitement de parties, p. ex. de conteneurs, avant l'assemblage des dispositifs, en utilisant des procédés non couverts par l'un uniquement des groupes ou
H01L 23/13 - Supports, p. ex. substrats isolants non amovibles caractérisés par leur forme
H01L 23/498 - Connexions électriques sur des substrats isolants
H05K 3/00 - Appareils ou procédés pour la fabrication de circuits imprimés
H01L 23/00 - Détails de dispositifs à semi-conducteurs ou d'autres dispositifs à l'état solide
H05K 1/18 - Circuits imprimés associés structurellement à des composants électriques non imprimés
2.
METHOD FOR THE PRODUCTION OF AN OPTOELECTRONIC COMPONENT, AND OPTOELECTRONIC COMPONENT
A method for producing an optoelectronic component comprises steps of: providing a chip carrier (100) having a top side (101) on which an optoelectronic semiconductor chip (110) is positioned; providing a protective film (200) having a top side (201) and a bottom side (202); positioning a silicone layer (120) on the top side of the chip carrier (100), such that the optoelectronic semiconductor chip (110) is embedded in the silicone layer (120); and laminating the bottom side of the protective film (200) onto the silicone layer (120).
H01L 25/075 - Ensembles consistant en une pluralité de dispositifs à semi-conducteurs ou d'autres dispositifs à l'état solide les dispositifs étant tous d'un type prévu dans une seule des sous-classes , , , , ou , p. ex. ensembles de diodes redresseuses les dispositifs n'ayant pas de conteneurs séparés les dispositifs étant d'un type prévu dans le groupe
An optoelectronic package is provided, which comprises a semiconductor chip, a bonding connection and an encapsulation body. The semiconductor chip has a top edge. The semiconductor chip and the bonding connection are covered and laterally surrounded by the encapsulation body. In top view, the bonding connection crosses the top edge of the semiconductor chip. The bonding connection is prevented from being in direct contact with the top edge in virtue of a kink-like shape of the bonding connection and/or in virtue of a structure, wherein the structure is different from the encapsulation body and the structure is located at least in places between the bonding connection and the top edge of the semiconductor chip. Furthermore, a method for manufacturing an optoelectronic package is provided.
The invention relates to an optoelectronic semiconductor component (100) comprising: an optoelectronic semiconductor chip (10) comprising a semiconductor body (1) and an electrical joining region (5) with a first polarity which is arranged on the semiconductor body (1), an electrical connection region (11) with a first polarity which is arranged to the side of the optoelectronic semiconductor chip (10), at least one connection element (12) which electrically conductively connects the electrical joining region (5) with the first polarity to the electrical connection region (11) with the first polarity and which has a casing (14) formed from an insulation material, wherein the insulation material (15) is an at least partially electrophoretically deposited material, and an encasement (15) in which the optoelectronic semiconductor chip (10) and the at least one connection element (12) are embedded, wherein the encasement (15) is formed of an encasement material that differs from the insulation material. The invention also relates to a method for producing at least one optoelectronic semiconductor component (100).
An electronic component (1) comprising a semiconductor body (10), a carrier element (20) and a bond wire (30) is described herein. The semiconductor body (10) is arranged on a mounting surface (20A) of the carrier element (20). The carrier element (20) comprises a contact reces s (40). The contact recess (40) comprises a bottom surface (401) and side walls (402). The bond wire (30) extends from the semiconductor body (10) to the bottom surface (401) of the contact recess (40). Furthermore, a method for manufacturing an electronic component (1) is provided.
H01L 33/48 - DISPOSITIFS À SEMI-CONDUCTEURS NON COUVERTS PAR LA CLASSE - Détails caractérisés par les éléments du boîtier des corps semi-conducteurs
H01L 23/00 - Détails de dispositifs à semi-conducteurs ou d'autres dispositifs à l'état solide
H01L 33/56 - Matériaux, p.ex. résine époxy ou silicone
H01L 33/62 - Dispositions pour conduire le courant électrique vers le corps semi-conducteur ou depuis celui-ci, p.ex. grille de connexion, fil de connexion ou billes de soudure
6.
METHOD FOR PRODUCING A PLANAR LIGHT CIRCUIT AND PLANAR LIGHT CIRCUIT
A method for producing a planar light circuit is specified. The method comprises: providing a substrate free of light producing regions, depositing a waveguide layer, applying a photostructurable mask on the waveguide layer, photostructuring of the photostructurable mask such that the photostructurable mask is removed in regions, etching of the waveguide layer in the regions such that channels are produced in the waveguide layer, wherein the channels confine waveguides, removal of the photostructurable mask layer, and singulating into a planar light circuit. Furthermore, a planar light circuit is specified.
G02B 6/136 - Circuits optiques intégrés caractérisés par le procédé de fabrication par gravure
G02B 6/12 - Guides de lumièreDétails de structure de dispositions comprenant des guides de lumière et d'autres éléments optiques, p. ex. des moyens de couplage du type guide d'ondes optiques du genre à circuit intégré
G02B 6/125 - Courbures, branchements ou intersections
G02B 6/132 - Circuits optiques intégrés caractérisés par le procédé de fabrication par le dépôt de couches minces
7.
OPTOELECTRONIC ARRANGEMENT FOR IMPROVED THERMAL MANAGEMENT AND METHOD OF MANUFACTURING THE SAME
The invention concerns an optoelectronic arrangement comprising edge emitting lasers for improved thermal management while minimizing overall package size. A method of manufacturing the proposed optoelectronic arrangement is also presented.
H01S 5/02255 - Découplage de lumière utilisant des éléments de déviation de faisceaux lumineux
H01S 5/02326 - Dispositions pour le positionnement relatif des diodes laser et des composants optiques, p. ex. rainures dans le support pour fixer des fibres optiques ou des lentilles
H01S 5/024 - Dispositions pour la gestion thermique
H01S 5/40 - Agencement de plusieurs lasers à semi-conducteurs, non prévu dans les groupes
H01S 5/02208 - SupportsBoîtiers caractérisés par la forme des boîtiers
8.
METHOD FOR PRODUCING A SEMICONDUCTOR CHIP AND SEMICONDUCTOR CHIP
In an embodiment, a method for producing a semiconductor chip includes providing a growth substrate having a growth surface, growing a buffer layer on the growth surface and growing an active structure on the buffer layer, wherein the active structure is based on a nitride compound semiconductor material, wherein the active structure is configured to produce electromagnetic radiation in a wavelength rage between 240 nm and 320 nm, inclusive, wherein the buffer layer is formed with InxAl1−xN, and wherein x is at least 0.02 and at most 0.13.
H10H 20/825 - Matériaux des régions électroluminescentes comprenant uniquement des matériaux du groupe III-V, p. ex. GaP contenant de l’azote, p. ex. GaN
9.
METHOD FOR PRODUCING A SUBSTRATE FOR A PLURALITY OF ELECTRONIC SEMICONDUCTOR CHIPS AND SUBSTRATES FOR A PLURALITY OF ELECTRONIC SEMICONDUCTOR CHIPS
The invention relates to a method for producing a substrate for a plurality of electronic semiconductor chips, comprising the following steps: - providing a flexible carrier (1) to which a polymer layer (3) is applied, - introducing cavities (4) into the polymer layer (3) such that a structured main surface (5) of the polymer layer (3) is produced, - applying a seed layer (6) to the structured main surface (5) of the polymer layer (3), - depositing a metal layer (7) on the seed layer (6), - depositing a solder layer (9) on or over the metal layer (7), - partially removing the solder layer (9) and the metal layer (7) such that a planar surface (11) is produced on which regions (12) having the solder (13) of the solder layer (7) and/or having an intermetallic phase (14) of the solder (13) of the solder layer (9) are exposed. The invention relates to a further method for producing a substrate for a plurality of electronic semiconductor chips, and to substrates for a plurality of electronic semiconductor chips.
H05K 1/03 - Emploi de matériaux pour réaliser le substrat
H05K 3/06 - Élimination du matériau conducteur par voie chimique ou électrolytique, p. ex. par le procédé de photo-décapage
H05K 3/16 - Appareils ou procédés pour la fabrication de circuits imprimés dans lesquels le matériau conducteur est appliqué au support isolant de manière à former le parcours conducteur recherché utilisant la technique de la vaporisation pour appliquer le matériau conducteur par pulvérisation cathodique
H05K 3/18 - Appareils ou procédés pour la fabrication de circuits imprimés dans lesquels le matériau conducteur est appliqué au support isolant de manière à former le parcours conducteur recherché utilisant la technique de la précipitation pour appliquer le matériau conducteur
The invention relates to a semiconductor laser (10), the semiconductor laser (10) comprising an active region (13) designed to emit laser radiation during operation of the semiconductor laser (10), a ridge region (14) arranged on the active region (13) or comprising at least part of the active region (13), and a grating (15) arranged next to the ridge region (14), wherein the grating (15) comprises an electrochromic material. The invention additionally relates to a method for operating a semiconductor laser (10).
H01S 5/12 - Structure ou forme du résonateur optique le résonateur ayant une structure périodique, p. ex. dans des lasers à rétroaction répartie [lasers DFB]
H01S 5/06 - Dispositions pour commander les paramètres de sortie du laser, p. ex. en agissant sur le milieu actif
H01S 5/22 - Structure ou forme du corps semi-conducteur pour guider l'onde optique ayant une structure à nervures ou à bandes
The invention relates to an optoelectronic arrangement comprising a first semiconductor laser device and a photonically integrated element optically coupled to the first semiconductor laser device. The first semiconductor laser device has a first laser light exit surface for coupling out laser light generated by the first semiconductor laser device, wherein the first semiconductor laser device is designed to emit laser light that has a different divergence angle in two mutually perpendicular directions. The photonically integrated element comprises a first laser light coupling-in surface that is optically coupled to the first laser light exit surface, a first waveguide section adjoining the first laser light coupling-in surface and designed to guide the laser light coupled into the first laser light coupling-in surface, a first light-shaping element that is at least optically coupled to the first waveguide section and is designed to shape the laser light emitted by the first semiconductor laser device in such a way that the laser light has a substantially equal divergence angle in the two mutually perpendicular directions after being coupled out of the photonically integrated element, and a first coupling-out element that is operatively connected to the first light-shaping element in order to emit the shaped laser light.
In an embodiment an optoelectronic device includes an epitaxially grown functional layer stack having a first layer, an active region arranged on the first layer, a second layer arranged on the active region and a third layer arranged on the second layer, the third layer having a higher concentration of the dopant of the second conductivity type than the second layer and an electrically conductive contact layer arranged on the third layer, wherein the functional layer stack is laterally limited by side surfaces of the functional layer stack and includes a central region along a center line of the functional layer stack, wherein the central region is spaced from the side surfaces, wherein a current path from the electrically conductive contact layer through the third layer to the second layer is limited to the central region, and wherein the third layer includes at least one intersection and the at least one intersection divides the third layer into at least a first region and a second region separated from the first region, the first region being limited to the central region.
H10H 20/816 - Corps ayant des structures contrôlant le transport des charges, p. ex. couches semi-conductrices fortement dopées ou structures bloquant le courant
The invention relates to a UV reactor (10) for irradiating a medium (104), comprising an assembly (105) of LEDs (102, 103) which are designed to irradiate the medium (104), and a mixing device (108) for mixing electromagnetic radiation (15) which has been emitted by each of the LEDs (102). The UV reactor (10) also comprises a detection device (110) which is designed to detect a failure of at least one defective LED (103), and a control device (112) for controlling the LEDs (102), which is designed to increase a control power of the LEDs (102) if the failure of at least one defective LED (103) has been detected.
A system in a package (SIP) (195) includes carrier layer regions (107) that have a dielectric material with a metal post (109) therethrough, where adjacent carrier layer regions define a gap. A driver IC die (110) is positioned in the gap having nodes connected to bond pads (111) exposed by openings in a top side of a first passivation layer (113), with the bond pads facing up. A dielectric layer (116) is on the first passivation layer and carrier layer region (107) that includes filled through vias (116a) coupled to the bond pads and to the metal post (109). A light blocking layer (118) is on sidewalls and a bottom of the substrate. A first device (140) includes a light emitter that has first bondable features (151a). The light blocking layer blocks at least 90% of incident light. The first bondable features are flipchip mounted to a first portion of the bond pads.
H10H 29/20 - Ensembles de plusieurs dispositifs comprenant au moins un composant émetteur de lumière à semi-conducteurs couvert par le groupe
H01L 25/16 - Ensembles consistant en une pluralité de dispositifs à semi-conducteurs ou d'autres dispositifs à l'état solide les dispositifs étant de types couverts par plusieurs des sous-classes , , , , ou , p. ex. circuit hybrides
H10F 55/255 - Dispositifs à semi-conducteurs sensibles au rayonnement couverts par les groupes , ou structurellement associés à des sources lumineuses électriques et électriquement ou optiquement couplés avec lesdites sources dans lesquels la source lumineuse électrique commande les dispositifs à semi-conducteurs sensibles au rayonnement, p. ex. optocoupleurs dans lesquels les dispositifs sensibles au rayonnement et la source lumineuse électrique sont tous des dispositifs à semi-conducteurs formés dans ou sur un même substrat
In an embodiment a device includes a carrier substrate with a first contact region and therefrom electrically insulated a second contact region, a light-emitting component arranged on the carrier substrate and electrically coupled to the first and second contact regions, a reflective encapsulation arranged on the carrier substrate, wherein the reflective encapsulation surrounds the light-emitting component and forms a cavity above a light-emitting surface of the light-emitting component, and a light conversion layer arranged directly on the light-emitting component in the cavity, wherein the light-emitting surface is smaller than a top surface of the light-emitting component, wherein the light conversion layer is substantially congruent with the light-emitting surface, wherein the cavity has a bottom lying in the same plane as the light-emitting surface, and wherein the cavity has side surfaces which are arranged at least partially at a distance from the light conversion layer so that a gap exists between the light conversion layer and the reflective encapsulation.
The invention relates to a method for manufacturing a plurality of radiation-emitting components, the method comprising the steps: - providing a component assembly comprising a plurality of radiation-emitting semiconductor chips each having a main emission surface, - arranging a conversion layer containing a phosphor on each of the main emission surfaces, and - structured etching of the conversion layers on surfaces of the conversion layers, wherein at least one recess (35) is produced in at least one conversion layer (30). The invention also relates to a radiation-emitting component.
The invention relates to a method for manufacturing a plurality of radiation-emitting components, the method comprising the steps of: - providing a component assembly comprising a plurality of radiation-emitting semiconductor chips each having a main emission surface, - arranging a conversion layer containing a phosphor on each of the main emission surfaces, - applying particles to and/or embedding particles into surfaces of the conversion layers in some regions. The invention also relates to a radiation-emitting component.
In an embodiment a housing includes a first leadframe part, a second leadframe part and a housing body mechanically connecting the first and second leadframe parts to one another, wherein the first leadframe part has a mounting region configured for attaching a semiconductor chip and/or for attaching an electrical connection, and an edge region at a lateral edge of the housing, wherein the first leadframe part has a trench between the mounting region and the edge region, wherein the trench is located on an outer side of the first leadframe part and the outer side is configured for mounting the housing, wherein the mounting region and the edge region extend as far as the outer side, wherein the housing body forms a first cavity and, in the first cavity, an inner side of the first leadframe part, which is configured for mounting the semiconductor chip, is free from the housing body, wherein the edge region is at least partially covered by a cavity wall of the first cavity, as seen in plan view of the inner side, and wherein, as seen in plan view of the inner side, all ends of the trench lie within the first cavity.
A laser diode component includes a semiconductor layer stack having first and second semiconductor regions, and an active zone between the first and second semiconductor regions. The laser diode component also includes a first contact structure including a first contact element. The laser diode component further includes a second contact structure including a second contact element. The second contact element is on the same side of the laser diode component as the first contact element. The laser diode component additionally includes a resonator including a first resonator region having a first reflective layer on the semiconductor layer stack, and a second resonator region having a first reflective layer and a second, electrically conductive reflective layer, each arranged on the semiconductor layer stack. The second, electrically conductive reflective layer connects the first contact element to the first semiconductor region or the second contact element to the second semiconductor region.
The invention relates to a method for manufacturing a plurality of radiation-emitting components, the method comprising the steps of: - providing a component assembly comprising a plurality of radiation-emitting semiconductor chips each having a main emission surface, - arranging a conversion layer containing a phosphor on each of the main emission surfaces, and - treating regions of surfaces of the conversion layers with a laser, wherein the thickness of the conversion layers is locally reduced and/or the phosphor is altered. The invention also relates to a radiation-emitting component.
A method for manufacturing an optoelectronic semiconductor component (1) is described herein. The method comprises the step of providing a semiconductor body (10) having an active region (101) configured to emit an electromagnetic radiation through an emission surface (10A) on a first side of the semiconductor body (10). Further, a photosensitive material (20) is applied on the first side of the semiconductor body (10) to form a cavity (200) laterally surrounding the emission surface (10A). The method comprises a further step of at least partially filling the cavity (200) with a wavelength converter material (30) comprising converter particles and a matrix material by using a screen printing mask (40) defining a printing region (401).
In an embodiment an optoelectronic semiconductor device includes at least one semiconductor layer stack having an active region and one or more side surfaces, wherein the active region extends to the one or more side surfaces and a regrowth semiconductor layer covering the active region at the one or more side surfaces, wherein the at least one semiconductor layer stack is free of etching traces at the one or more side surfaces.
The invention concerns a light emitting device, in particular μLED, comprising a semiconductor layer stack of at least a first layer of a first conductivity type, a second layer of a second conductivity type as well as an active region arranged between the first and the second layer. The active region comprises a central region as well as a side region laterally surrounding the central region. In addition, the active region comprises at least one quantum well arranged between a first and a second barrier layer, wherein the first and the second barrier layer each comprise at least a first and a second sublayer, with the second sublayers each being adjacent to one of the at least one quantum well. The first sublayers at least in the central region comprise a smaller average bandgap than the second sublayers the at least one quantum well at least in the central region comprises a smaller average bandgap than the second sublayers and the at least one quantum well at least in the central region comprises a smaller average bandgap than the first sublayers.
H01L 33/00 - DISPOSITIFS À SEMI-CONDUCTEURS NON COUVERTS PAR LA CLASSE - Détails
H01L 33/06 - DISPOSITIFS À SEMI-CONDUCTEURS NON COUVERTS PAR LA CLASSE - Détails caractérisés par les corps semi-conducteurs ayant une structure à effet quantique ou un superréseau, p.ex. jonction tunnel au sein de la région électroluminescente, p.ex. structure de confinement quantique ou barrière tunnel
H01L 33/30 - Matériaux de la région électroluminescente contenant uniquement des éléments du groupe III et du groupe V de la classification périodique
24.
METHOD FOR PRODUCING A PLURALITY OF LIGHT-EMITTING DEVICES AND LIGHT-EMITTING DEVICE
A method for producing a plurality of light-emitting devices is disclosed. The method comprises: - providing a plurality of light-emitting semiconductor chips on a substrate, - applying a precursor mixture on the plurality of light-emitting semiconductor chips, wherein the precursor mixture comprises a polysiloxane precursor, phosphor particles and a photoactive catalyst, - irradiating the precursor mixture in first regions to form a conversion layer in the first regions, wherein the conversion layer comprises a polysiloxane resin and the phosphor particles. Furthermore, a light-emitting device is disclosed. The light-emitting device in particular comprises a micro-LED.
A display module (100) includes: - a base layer (110), - first electrical conductor structures (120) arranged on the base layer (110), - a two-dimensional arrangement (131) of light-emitting optoelectronic components (130) mounted on the base layer (110) and electrically connected to the first electrical conductor structures (120), and - a cover layer (150) arranged on a top side (111) of the base layer (110), the cover layer (150) further comprising second electrical conductor structures (160) arranged on a bottom side (152) of the cover layer (150) and being electrically connected to the first electrical conductor structures (120). The base layer (110) and the cover layer (150) are arranged laterally offset to each other in such a way that at least on a first side (103, 105) of the display module (100) the cover layer (150) protrudes laterally from the base layer (110) and/or at least on a second side (104, 106) of the display module (100) opposite to the first side (103, 105) the base layer (110) protrudes laterally from the cover layer (150). At least a part of the base layer (110) and/or at least a part of the cover layer (150) is formed as an elastic foil.
H10H 29/854 - Encapsulations caractérisées par leurs matériaux, p. ex. résines époxy ou silicone
H10H 29/855 - Moyens de mise en forme du champ optique, p. ex. lentilles
H01L 25/16 - Ensembles consistant en une pluralité de dispositifs à semi-conducteurs ou d'autres dispositifs à l'état solide les dispositifs étant de types couverts par plusieurs des sous-classes , , , , ou , p. ex. circuit hybrides
26.
OPTOELECTRONIC COMPONENT, AND METHOD FOR THE PRODUCTION OF AN OPTOELECTRONIC COMPONENT
The invention relates to an optoelectronic component (22) comprising at least one module having a plurality of optoelectronic assemblies (1). Each optoelectronic assembly (1) comprises a substrate (2) having an upper face (3) and a lower face (4) opposite the upper face (3), and an optoelectronic semiconductor chip (12) which is situated on the upper face (3) of the substrate (2) and is designed to emit electromagnetic radiation on an emission surface (13) that faces away from the upper face (3). The optoelectronic assemblies (1) are arranged laterally one next to the other and are mechanically interconnected by means of at least one connecting element (23, 24, 25, 26, 27, 42).
H01L 25/075 - Ensembles consistant en une pluralité de dispositifs à semi-conducteurs ou d'autres dispositifs à l'état solide les dispositifs étant tous d'un type prévu dans une seule des sous-classes , , , , ou , p. ex. ensembles de diodes redresseuses les dispositifs n'ayant pas de conteneurs séparés les dispositifs étant d'un type prévu dans le groupe
H10H 20/857 - Interconnexions, p. ex. grilles de connexion, fils de connexion ou billes de soudure
H01L 25/16 - Ensembles consistant en une pluralité de dispositifs à semi-conducteurs ou d'autres dispositifs à l'état solide les dispositifs étant de types couverts par plusieurs des sous-classes , , , , ou , p. ex. circuit hybrides
27.
METHOD FOR PRODUCING AN OPTOELECTRONIC COMPONENT, AND OPTOELECTRONIC COMPONENT
In an embodiment a method includes providing an optoelectronic semiconductor chip having an electrical contact pad arranged on a top side, connecting a bond wire to the electrical contact pad, forming a covering body on the electrical contact pad, wherein the covering body is limited to the electrical contact pad and does not cover other portions of the top side of the optoelectronic semiconductor chip, and wherein the bond wire is partially embedded in the covering body, and forming a wavelength-converting element on the top side of the optoelectronic semiconductor chip, wherein the covering body is at least partly covered by the wavelength-converting element.
An optoelectronic component (25) comprises a plurality of optoelectronic arrangements (1). Every optoelectronic arrangement comprises a substrate (2) with a top side (3), a bottom side (3) and side faces (19) an optoelectronic semiconductor chip arranged at the top side (3) and designed to emit electromagnetic radiation at an emission face (13) averted from the substrate (2). The optoelectronic arrangements (1) are arranged laterally next to each other such that the substrates (2) are in parallel with each other. The optoelectronic arrangements (1) are connected mechanically to each other by a frame (26) arranged between the side faces (19) of substrates (2) of neighbouring optoelectronic arrangements (1) and extending between the bottom sides (4) and the top sides (3) of the substrates (2).
In an embodiment a carrier arrangement includes a connection carrier and an insert body, wherein the connection carrier has at least one recess, wherein the insert body has a trench, which is arranged on a cover surface of the insert body, wherein the insert body is arranged in the recess of the connection carrier, wherein the trench does not completely penetrate the insert body in a vertical direction, and wherein the insert body does not extend completely through the connection carrier in the vertical direction.
An optoelectronic semiconductor device (10) comprises an epitaxial semiconductor layer stack (112) comprising a first semiconductor layer (110) of a first conductivity type, a second semiconductor layer (120) of a second conductivity type and an active zone (115) arranged between the first semiconductor layer (110) and the second semiconductor layer (120), the active zone (115) being configured to generate electromagnetic radiation (15). The optoelectronic semiconductor device (10) further comprises a conductive layer (122) over a first main surface (117) of the epitaxial semiconductor layer stack (112) and a dielectric or semiconducting first material layer (124) over a surface of the conductive layer (122) remote from the epitaxial semiconductor layer stack (112). A first main surface (125) of the first material layer (124) remote from the conductive layer (122) is patterned. The optoelectronic semiconductor device (10) further comprises a metal layer (126) over the first main surface (125) of the first material layer (124).
The invention concerns an optoelectronic device manufactured on a growth template based on an epitaxial lateral overgrowth process. Modification of existing ELO processes allow processing of optoelectronic devices exhibiting high efficiency and characterized by low defect density.
The invention concerns an optoelectronic arrangement, comprising a top surface forming an emission surface of the arrangement, an array of optoelectronic devices, in particularly arranged in rows and columns, each optoelectronic device of the array of optoelectronic devices configured to emit light through the emission surface of the arrangement and a conductive grid structure arranged on the top surface, such that the conductive grid structure surrounds a subset optoelectronic devices of the array of optoelectronic devices when viewed from a direction onto the top surface. An optical element is arranged on the top surface in the area surrounded by the conductive grid structure and attached at least to sidewalls of the conductive grid structure. The conductive grid structure is covered at least in regions, on which the optical element is attached to, by a conductive oxide layer, in particular one of ITO or ZnO.
A method for operating an optoelectronic system (200), in particular an LED system (200) having at least one LED unit (201), is provided, having the steps of: receiving voltage values (213) of an LED voltage (U) dropping across the at least one LED unit (201); determining a change in the LED voltage (U) dropping across the at least one LED unit on the basis of the voltage values (213) of the LED voltage (U); determining a time interval (Ta, Tn) during which the change in the LED voltage (U) dropping across the at least one LED unit takes place between a first defined limit value and a second defined limit value; and carrying out an operating function of the optoelectronic system (200) on the basis of the determined time interval (Ta, Tn). The invention also relates to an optoelectronic system (200).
H05B 45/58 - Circuits pour faire fonctionner des diodes électroluminescentes [LED] réagissant aux dysfonctionnements des LED ou à un comportement indésirable des LEDCircuits pour faire fonctionner des diodes électroluminescentes [LED] sensibles à la vie des LEDCircuits de protection impliquant la détection de fin de vie des LED
H05B 45/14 - Commande de l'intensité de la lumière à l'aide d'une rétroaction électrique provenant de LED ou de modules de LED
H05B 45/24 - Commande de la couleur de la lumière à l'aide d'une rétroaction électrique provenant de LED ou de modules de LED
H05B 45/12 - Commande de l'intensité de la lumière à l'aide d'un retour optique
H05B 45/18 - Commande de l'intensité de la lumière à l'aide d'un retour de température
H05B 45/22 - Commande de la couleur de la lumière à l'aide d'un retour optique
H05B 45/28 - Commande de la couleur de la lumière à l'aide d'un retour de température
G01R 31/26 - Test de dispositifs individuels à semi-conducteurs
A conversion element is specified. According to one embodiment, the conversion element (1) comprises a substrate (2) and a first layer (3) comprising a phosphor (31) in a matrix material (32) on the substrate (2), wherein the first layer (3) is configured to convert primary radiation into secondary radiation, and wherein a lateral extension of the substrate (2) is larger than a lateral extension of the first layer (3) in at least one extension direction parallel to a main extension plane of the conversion element (1). Furthermore, a method for producing a conversion element and an optoelectronic device, in particular comprising a micro- LED, are specified.
6-x-3t-r-3s-q-px+3t-w-u-z+p9-x-t-y-v-3w-z-2r-2sx+y+3w+2rt+v+z+2s14-y- 3v-3u-2q+p3+y+3v+3u+2q-p3+y+3v+3u+2q-p:E, where EA is an element or a combination of elements from the group of divalent elements, SE is an element or a combination of elements from the group of rare earth elements, T is an element or a combination of elements from the group of tetravalent elements, D is an element or a combination of elements from the group of trivalent elements, A is an element or a combination of elements from the group of monovalent elements, E is an element or a combination of elements from the group Ce, Eu, Mn, Tb, Dy, Er, Cr, Ni, Bi, Cu, 2*(6-x-3t-r-3s-q-p) +3*(x+3t-w-u-z+p)+4*(9-x-t-y-v-3w-z- 2r-2s)+3*(x+y+3w+2r)+1*(t+v+z+2s)-3*(14-y-3v-3u-2q+p)- 2*(3+y+3v+3u+2q-p) = 0; 0 ≤ x+3t+r+3s+q+p ≤ 6; 0 ≤ x+3t-w-u-z+p ≤ 6; 0 ≤ x+t+y+v+3w+z+2r+2s ≤ 9; 0 ≤ x+y+3w+2r ≤ 9; 0 ≤ t+v+z+2s ≤ 9; and -3 ≤ y+3v+3u+2q-p ≤ 14. The invention also relates to an optoelectronic component (10) and to a method for producing a phosphor (1).
C09K 11/80 - Substances luminescentes, p. ex. électroluminescentes, chimiluminescentes contenant des substances inorganiques luminescentes contenant des métaux des terres rares contenant de l'aluminium ou du gallium
C09K 11/59 - Substances luminescentes, p. ex. électroluminescentes, chimiluminescentes contenant des substances inorganiques luminescentes contenant du silicium
H10H 20/851 - Moyens de conversion de la longueur d’onde
36.
OPTOELECTRONIC COMPONENT AND METHOD OF PRODUCING AN OPTOELECTRONIC COMPONENT
An optoelectronic component (18) comprises a module (17) with a rigid first carrier (12), a foil (1), a structured contact layer (4) and at least one optoelectronic semiconductor chip (7). The foil (1) is arranged with its inner side (2) at a first top side (13) of the first carrier (12). The contact layer (4) is arranged at an outer side (3) of the foil (1) averted from the first top side (13) of the first carrier (12). The optoelectronic semiconductor chip (7) is arranged at a surface (5) of the contact layer (4) averted from the outer side (3) of the foil (1).
H10H 20/813 - Corps ayant une pluralité de régions électroluminescentes, p. ex. LED à jonctions multiples ou dispositifs émetteurs de lumière ayant des régions photoluminescentes au sein des corps
H10H 20/84 - Revêtements, p. ex. couches de passivation ou revêtements antireflets
H10H 29/14 - Dispositifs intégrés comprenant au moins un composant émetteur de lumière à semi-conducteurs couvert par le groupe comprenant plusieurs composants émetteurs de lumière à semi-conducteurs
H10H 29/49 - Interconnexions, p. ex. lignes de câblage ou bornes
H10H 29/20 - Ensembles de plusieurs dispositifs comprenant au moins un composant émetteur de lumière à semi-conducteurs couvert par le groupe
H10H 29/24 - Ensembles de plusieurs dispositifs comprenant au moins un composant émetteur de lumière à semi-conducteurs couvert par le groupe comprenant plusieurs dispositifs émetteurs de lumière à semi-conducteurs
In at least one embodiment, the picture-processing device (10) comprises: - a semiconductor projector (1) having one or a plurality of semiconductor light sources (2) configured to emit an emission pattern (E) of electromagnetic radiation (R) and optics (3) configured to shape the emission pattern (E), - a camera unit (5) configured to record emission pattern (E) of the semiconductor projector (1), - a temperature sensor (6) configured to measure a projector temperature (Tp) of the semiconductor projector (1), and - a mitigation unit (4), wherein the mitigation unit (4) is configured to mitigate effects of changes of the projector temperature (Tp) on the recorded emission pattern.
The invention concerns a method for manufacturing a plurality of optoelectronic devices comprising the steps: Providing a semiconductor layer stack of a first layer of a first conductivity type, a second layer of a second conductivity type as well as an active region between the first and second layer, on a growth substrate; Structuring the semiconductor layer stack to remain first portions and to remove at least one adjacent second portion, the first portions each comprising a bottom surface and first side wall portions extending from the bottom surface into the direction of the growth substrate through at least the second layer and the active region; Providing first contact elements on each of the bottom surfaces electrically contacting the second layer; Providing a material layer covering at least portions of the first side wall portions; Providing a first sacrificial layer at least partially covering the first contact elements and the material layer; Providing a first bond layer covering the first sacrificial layer; Backside processing the semiconductor layer stack such that a plurality of separated optoelectronic devices with each a light emitting surface is formed; Providing a holding structure contacting the light emitting surfaces of the optoelectronic devices; and removing the first sacrificial layer such that the optoelectronic devices are substantially only connected to the holding structure.
H10H 20/813 - Corps ayant une pluralité de régions électroluminescentes, p. ex. LED à jonctions multiples ou dispositifs émetteurs de lumière ayant des régions photoluminescentes au sein des corps
H10H 20/831 - Électrodes caractérisées par leur forme
H10H 20/84 - Revêtements, p. ex. couches de passivation ou revêtements antireflets
H10H 20/853 - Encapsulations caractérisées par leur forme
H10H 29/14 - Dispositifs intégrés comprenant au moins un composant émetteur de lumière à semi-conducteurs couvert par le groupe comprenant plusieurs composants émetteurs de lumière à semi-conducteurs
In an embodiment an optoelectronic semiconductor component includes a semiconductor body having an n-conducting region, a p-conducting region and an active region configured to emit electromagnetic radiation, the active region arranged between the n-conducting region and the p-conducting region, wherein the p-conducting region comprises a spacer region and a p-doped doping region, wherein the spacer region is arranged between the doping region and the active region and comprises a first spacer layer comprising aluminum, and wherein a vertical extension of the doping region corresponds to at most one third of a vertical extension of the spacer region.
H01S 5/22 - Structure ou forme du corps semi-conducteur pour guider l'onde optique ayant une structure à nervures ou à bandes
H01S 5/34 - Structure ou forme de la région activeMatériaux pour la région active comprenant des structures à puits quantiques ou à superréseaux, p. ex. lasers à puits quantique unique [SQW], lasers à plusieurs puits quantiques [MQW] ou lasers à hétérostructure de confinement séparée ayant un indice progressif [GRINSCH]
H01S 5/40 - Agencement de plusieurs lasers à semi-conducteurs, non prévu dans les groupes
40.
OPTOELECTRONIC DEVICE COMPRISING AN EMBEDDING LAYER AND A REFLECTIVE ELEMENT
An optoelectronic device (1) comprises a carrier substrate (3) and a plurality of µ-LEDs (4) arranged spaced apart from each other on the carrier substrate (3). Each µ-LED (4) comprises an active region (8c) and is configured as a volume emitter for emission of electromagnetic radiation (L). The optoelectronic device (1) further comprises an embedding layer (5) that is substantially transparent to electromagnetic radiation (L) emitted by each of the µ-LEDs (4) and is arranged over the carrier substrate (3). The embedding layer (5) embeds the plurality of µ-LEDs (4) at least on their respective side surfaces (4a) at least at a level of the active regions (8c). The optoelectronic device (1) further comprises a reflective element (16) arranged between adjacent µ-LEDs (4).
3-3/2u-x-w-z1+u+x-y-x+zy+x-z11-y-2wy+2wy+2w:A, wherein - EA is selected from Mg, Ca, Sr, Ba, Zn or combinations thereof, - SE is selected from the group of rare earth elements or combinations thereof, - T is selected from the group of tetravalent elements or combinations thereof, - D is selected from the group of trivalent elements or combinations thereof, - A is selected from Ce, Eu, Mn, Bi, Tb, Dy, Ni, Cr, Cu, Er or combinations thereof, - 2*(3-3/2u-x-w-z) + 3*(1+u+x) + 4*(6-y-x+z) + 3*(y+x-z) – 3*(11-y-2w) – 2*(y+2w) = 0, - 0 ≤ y+x-z ≤ 6, - 0 ≤ y+2w ≤ 11, and - if u+x > 0, then w ≤ 0 and z ≤ 0; or - if u+x = 0, then w > 0 or z > 0. The invention also relates to an optoelectronic component (10), a method for producing a luminophore (1), a turn signal light (17) and road and street lighting (18).
C09K 11/79 - Substances luminescentes, p. ex. électroluminescentes, chimiluminescentes contenant des substances inorganiques luminescentes contenant des métaux des terres rares contenant du silicium
H10H 20/851 - Moyens de conversion de la longueur d’onde
C09K 11/80 - Substances luminescentes, p. ex. électroluminescentes, chimiluminescentes contenant des substances inorganiques luminescentes contenant des métaux des terres rares contenant de l'aluminium ou du gallium
A light-emitting semiconductor chip is specified, comprising - a semiconductor body (1) with a radiation exit surface (11), - a passivation (2) on the radiation exit surface (11), - a contact structure (3) on the passivation (2), - at least one opening (4) in the passivation (2), wherein - the contact structure (3) contacts the semiconductor body (1) at the radiation exit surface (11) through the at least one opening (4).
A conversion element is specified. According to one embodiment, the conversion element (1) comprises a first segment (2) comprising a first phosphor (21), wherein the first segment (2) is configured to convert electromagnetic radiation of a first wavelength range into electromagnetic radiation of a second wavelength range, and a second segment (3) comprising a second phosphor (31), wherein the second segment (3) is configured to convert electromagnetic radiation of the first wavelength range into electromagnetic radiation of a third wavelength range, and wherein the first segment (2) laterally surrounds the second segment (3) in a main extension plane of the conversion element (1). Furthermore, a method for producing a conversion element and an optoelectronic device, in particular comprising a micro-LED, are specified.
A spinning electromotive assembly comprises a rotor, which is rotatably supported by a stator and comprises motor coils. A control unit is operable to synchronously reverse the polarity of the motor coils. An optical sensor arrangement is connected to the stator and operable to detect ultraviolet or ultraviolet and/or visible radiation of partial discharges induced in the motor coils when the polarity is reversed.
H02K 11/20 - Association structurelle de machines dynamo-électriques à des organes électriques ou à des dispositifs de blindage, de surveillance ou de protection pour la mesure, la surveillance, les tests, la protection ou la coupure
H02K 11/33 - Circuits d’entraînement, p. ex. circuits électroniques de puissance
H02P 29/032 - Prévention d’un endommagement du moteur, p. ex. détermination de limites individuelles de courant pour différentes conditions de fonctionnement
45.
SEMICONDUCTOR LASER DEVICES AND METHODS FOR PRODUCING THEREOF
A vertical-cavity surface-emitting laser (VCSEL) includes a substrate having a first main surface and a second main surface opposite the first main surface with a first reflector structure formed above the first main surface of the substrate. A second reflector structure is formed above the first main surface of the substrate and a multijunction active region formed above the first main surface of substrate between the first reflector structure and the second reflector structure. The multi-junction active region includes a core region configured to generate laser light through stimulated emission and a cladding region laterally surrounding the core region. The cladding region is configured to laterally confine electrical current and optical light vertically traveling in the VCSEL to the core region.
H01S 5/183 - Lasers à émission de surface [lasers SE], p. ex. comportant à la fois des cavités horizontales et verticales comportant uniquement des cavités verticales, p. ex. lasers à émission de surface à cavité verticale [VCSEL]
H01S 5/30 - Structure ou forme de la région activeMatériaux pour la région active
H01S 5/20 - Structure ou forme du corps semi-conducteur pour guider l'onde optique
H01S 5/34 - Structure ou forme de la région activeMatériaux pour la région active comprenant des structures à puits quantiques ou à superréseaux, p. ex. lasers à puits quantique unique [SQW], lasers à plusieurs puits quantiques [MQW] ou lasers à hétérostructure de confinement séparée ayant un indice progressif [GRINSCH]
H01S 5/42 - Réseaux de lasers à émission de surface
H01S 5/32 - Structure ou forme de la région activeMatériaux pour la région active comprenant des jonctions PN, p. ex. hétérostructures ou doubles hétérostructures
H01S 5/323 - Structure ou forme de la région activeMatériaux pour la région active comprenant des jonctions PN, p. ex. hétérostructures ou doubles hétérostructures dans des composés AIIIBV, p. ex. laser AlGaAs
46.
OPTOELECTRONIC COMPONENT AND METHOD FOR PRODUCING AN OPTOELECTRONIC COMPONENT
vv) from the radiation exit surface (11) of the optoelectronic component. The diffusely reflective potting (21) has a first step (22) between the radiation exit surface (11) of the optoelectronic component and the upper main surface (23). The invention further relates to a method for producing an optoelectronic component.
The invention concerns an optoelectronic device, in particular µLED, comprising a semiconductor layer stack of at least a first layer of a first conductivity type, a second layer of a second conductivity type as well as an active region between the first and second layer. The semiconductor layer stack comprises bottom surface and a light emitting surface opposite the bottom surface, a first side wall portion extending from the bottom surface into the direction of the light emitting surface until a level between the active region and the light emitting surface, a second side wall portion extending from a level between the active region and the light emitting surface until the light emitting surface, and a plateau connecting the first and second side wall portion. The optoelectronic device further comprises a material layer covering at least portions of the first side wall portion, a first contact element arranged on the bottom surface and electrically contacting the second layer, and a second contact element arranged on the plateau and electrically contacting the first layer.
H10H 20/816 - Corps ayant des structures contrôlant le transport des charges, p. ex. couches semi-conductrices fortement dopées ou structures bloquant le courant
H10H 20/819 - Corps caractérisés par leur forme particulière, p. ex. substrats incurvés ou tronqués
H10H 20/831 - Électrodes caractérisées par leur forme
An optoelectronic component is provided. The optoelectronic component is a light emitting diode LED system and comprises at least one light emitting LED unit and at least one collimation structure for collimation of light emitted by the LED unit, wherein the LED unit comprises at least one light emitting facet to emit light, wherein the collimation structure comprises at least one reflector element with at least on reflective surface capable of reflecting the light emitted by the LED unit, and wherein the reflective surface of the reflector element is positioned facing the at least one light emitting facet of the LED unit. Further, a method for manufacturing an optoelectronic component is provided.
The invention relates to an Optoelectronic component, especially a photonic integrated circuit PIC, comprising a photonic integrated circuit PIC chip and an optical waveguide structure with at least one optical waveguide placed on the PIC chip, wherein the PIC chip comprises a coupling face to allow for an edge coupling of the optoelectronic component to an edge emitting laser EEL unit by means of edge coupling, wherein an input port of the at least one optical waveguide for inputting laser signals of the EEL unit into the photonic integrated circuit is formed into the coupling face, and wherein at least one recess area is formed into the coupling face neighboring to the input port of the at least one optical waveguide. The invention further relates to an optoelectronic system, a method for manufacturing an optoelectronic component and a method for manufacturing an optoelectronic system.
x1-xyx1-x-y1-x-yN with x between 0.02 and 0.5. A first mesa etch is conducted to remove material of the exposed portions, whereby the second dislocation shaping layer is left unetched by said first mesa etch. An ALD process and a second mesa etch is conducted, removing material of the second dislocation shaping layer and the second layer of doped GaN. Finally, a second dielectric material is deposited on the exposed sidewalls.
H01L 33/00 - DISPOSITIFS À SEMI-CONDUCTEURS NON COUVERTS PAR LA CLASSE - Détails
H01L 33/02 - DISPOSITIFS À SEMI-CONDUCTEURS NON COUVERTS PAR LA CLASSE - Détails caractérisés par les corps semi-conducteurs
H01L 33/12 - DISPOSITIFS À SEMI-CONDUCTEURS NON COUVERTS PAR LA CLASSE - Détails caractérisés par les corps semi-conducteurs ayant une structure de relaxation des contraintes, p.ex. couche tampon
H01L 33/20 - DISPOSITIFS À SEMI-CONDUCTEURS NON COUVERTS PAR LA CLASSE - Détails caractérisés par les corps semi-conducteurs ayant une forme particulière, p.ex. substrat incurvé ou tronqué
H01L 33/32 - Matériaux de la région électroluminescente contenant uniquement des éléments du groupe III et du groupe V de la classification périodique contenant de l'azote
H01L 33/14 - DISPOSITIFS À SEMI-CONDUCTEURS NON COUVERTS PAR LA CLASSE - Détails caractérisés par les corps semi-conducteurs ayant une structure contrôlant le transport des charges, p.ex. couche semi-conductrice fortement dopée ou structure bloquant le courant
H01L 33/44 - DISPOSITIFS À SEMI-CONDUCTEURS NON COUVERTS PAR LA CLASSE - Détails caractérisés par les revêtements, p.ex. couche de passivation ou revêtement antireflet
51.
SERIAL COMMUNICATION NETWORK WITH A PLURALITY OF BRANCHES
The present disclosure relates to a serial communication network (300) including: a plurality of branches (302), wherein each branch (302) includes a plurality of network nodes (304) connected to one another in a daisy chain configuration and configured to communicate with one another according to a wired communication protocol for serial communication, wherein the plurality of network nodes (304) in the branch (302) are connected according to a linear daisy chain topology and are configured for bidirectional communication, or wherein the plurality of network nodes (304) in the branch (302) are connected according to a loopback daisy chain topology and are configured for unidirectional communication; and a master control unit (310) common to the plurality of branches (302) and communicatively coupled with at least one network node (304, 306) of each branch (302) of the plurality of branches (302), wherein the network nodes (304) of at least one branch (302) are configured to support a plurality of physical modes for communication according to the wired communication protocol for serial communication.
A light based pupil size measuring system includes at least one semiconductor light source including a cavity and configured to emit light onto an eye target. The system further includes at least one light sensor for converting a self-mixing interferometric (SMI) signal of the light backscattered from the eye target into the cavity into an electrical current or voltage and includes at least one processor configured to determine ocular pupillary movement of the eye target based on the converted SMI signal from the at least one light sensor.
A61B 3/113 - Appareils pour l'examen optique des yeuxAppareils pour l'examen clinique des yeux du type à mesure objective, c.-à-d. instruments pour l'examen des yeux indépendamment des perceptions ou des réactions du patient pour déterminer ou enregistrer le mouvement de l'œil
53.
OPTOELECTRONIC SEMICONDUCTOR COMPONENT AND METHOD FOR MANUFACTURING AN OPTOELECTRONIC SEMICONDUCTOR COMPONENT
An optoelectronic semiconductor component (1) comprising a substrate (10), a boundary structure (20) and a dam element (30) is described herein. The boundary structure (20) and the dam element (30) are arranged on an upper side (10A) of the substrate (10). The boundary structure (20) comprises a first boundary element (201) and a second boundary element (202). The first and second boundary elements (201, 202) are arranged at a distance (D) from each other. The dam element (30) is arranged between the first boundary element (201) and the second boundary element (202). Furthermore, a method for manufacturing an optoelectronic semiconductor component (1) is disclosed.
H01L 33/48 - DISPOSITIFS À SEMI-CONDUCTEURS NON COUVERTS PAR LA CLASSE - Détails caractérisés par les éléments du boîtier des corps semi-conducteurs
H01L 23/24 - Matériaux de remplissage caractérisés par le matériau ou par ses propriétes physiques ou chimiques, ou par sa disposition à l'intérieur du dispositif complet solide ou à l'état de gel, à la température normale de fonctionnement du dispositif
H01L 33/54 - Encapsulations ayant une forme particulière
H01L 33/62 - Dispositions pour conduire le courant électrique vers le corps semi-conducteur ou depuis celui-ci, p.ex. grille de connexion, fil de connexion ou billes de soudure
54.
METHOD FOR FORCE TOUCH SENSING, DEVICE FOR FORCE TOUCH SENSING AND INPUT DEVICE
A method for force touch sensing is provided, the method comprising touching a sensing surface of a device with an object, wherein the object comprises a structure on an outer surface, in first regions of the sensing surface, the structure is in direct contact with the sensing surface, and in second regions of the sensing surface, the structure is distant to the sensing surface. The method further comprises determining the ratio of the first regions of the sensing surface to the second regions of the sensing surface, wherein the structure is configured to be deformed depending on a force of the object on the sensing surface. Furthermore, a device for force touch sensing and an input device for generating touch input are provided.
A method of producing an optoelectronic component (10) comprises the following method steps. A first foil (2) comprising a top side (3) and a bottom side (4) is provided, wherein at least one optoelectronic semiconductor chip (5) designed to emit electromagnetic radiation is arranged at the top side (3) of the first foil (2). An encapsulation film (9) which is at least partially cured is arranged at the top side (3) of the first foil (2), wherein the optoelectronic semiconductor chip (5) is embedded into the encapsulation film (9).
The invention relates to a method for producing an electronic component. The method comprises: forming a first semiconductor layer of a first material on a substrate of a second material, wherein the first material differs from the second material; forming a dielectric structure on the first semiconductor layer, wherein the dielectric structure has a plurality of openings, and in the openings the first semiconductor layer is exposed; epitaxially forming a second semiconductor layer on the first semiconductor layer, which in the openings is exposed, and at least in a region above the dielectric structure, wherein the second semiconductor layer comprises or is formed from the first material; and forming a third semiconductor layer on or above the second semiconductor layer in a first region above the openings of the dielectric structure and in a second region above the dielectric structure. The method also comprises: forming a sacrificial structure on the second semiconductor layer; forming the third semiconductor layer on the sacrificial structure; and removing the sacrificial structure such that the third semiconductor layer is separated from the second semiconductor layer.
An optoelectronic component (1, 2, 3, 4, 5, 6, 7) has an optoelectronic assembly (13) with a housing (12) and an optoelectronic semiconductor chip (8) embedded in the housing (12). The optoelectronic semiconductor chip (8) is designed to emit electromagnetic radiation. At least one first radiation emission surface (9) of the optoelectronic semiconductor chip (8) is not covered by a material of the housing (12), and the housing (12) is at least partly black.
H10H 20/855 - Moyens de mise en forme du champ optique, p. ex. lentilles
H01L 25/075 - Ensembles consistant en une pluralité de dispositifs à semi-conducteurs ou d'autres dispositifs à l'état solide les dispositifs étant tous d'un type prévu dans une seule des sous-classes , , , , ou , p. ex. ensembles de diodes redresseuses les dispositifs n'ayant pas de conteneurs séparés les dispositifs étant d'un type prévu dans le groupe
58.
METHOD FOR MANUFACTURING A PLURALITY OF SEMICONDUCTOR CHIPS
A method for manufacturing a plurality of semiconductor chips with the following steps is provided: - providing a functional semiconductor wafer (10) comprising a semiconductor body (2) on a growth substrate (1), wherein the semiconductor body (1) comprises an epitaxial semiconductor layer sequence (20) with a plurality of chip regions (3) and a distance holder structure (4) buried in the semiconductor body (2), and - removing the growth substrate (1).
H01L 21/78 - Fabrication ou traitement de dispositifs consistant en une pluralité de composants à l'état solide ou de circuits intégrés formés dans ou sur un substrat commun avec une division ultérieure du substrat en plusieurs dispositifs individuels
A vertical-cavity surface-emitting laser (VCSEL) includes a substrate; a first mirror formed above a first surface of the substrate; a second mirror formed above the first surface of the substrate; and an active region formed above the first surface of a substrate between the first mirror and the second mirror structure comprising at least one quantum-wells (QW) region. The first mirror and/or the second mirror include one or more low thermal conductivity layers.
H01S 5/024 - Dispositions pour la gestion thermique
H01S 5/183 - Lasers à émission de surface [lasers SE], p. ex. comportant à la fois des cavités horizontales et verticales comportant uniquement des cavités verticales, p. ex. lasers à émission de surface à cavité verticale [VCSEL]
H01S 5/06 - Dispositions pour commander les paramètres de sortie du laser, p. ex. en agissant sur le milieu actif
H01S 5/062 - Dispositions pour commander les paramètres de sortie du laser, p. ex. en agissant sur le milieu actif en faisant varier le potentiel des électrodes
60.
SEMICONDUCTOR NANOCRYSTAL STRUCTURE, METHOD FOR PRODUCING THEREOF AND OPTOELECTRONIC DEVICE
A structure is specified. According to one embodiment, the structure (1) comprises a semiconductor nanocrystal (2) and a first shell (3) at least partially surrounding the semiconductor nanocrystal (2), wherein the structure (1) is configured to convert a primary radiation into a secondary radiation, wherein the first shell (3) comprises a metal selenide semiconductor material or a metal phosphide semiconductor material, and wherein the first shell (3) is rod-shaped. Furthermore, methods for producing a structure and an optoelectronic device, in particular comprising a micro-LED, are specified.
The present disclosure relates to a photocatalysis device (200) including: a mixing area (202) configured to receive a medium (206) and solid photocatalytic elements (210), and to output the solid photocatalytic elements (210) immersed in the medium (206); a reaction chamber (220) configured to receive the solid photocatalytic elements (210) immersed in the medium (206), wherein the reaction chamber (220) is configured such that the solid photocatalytic elements (210) are freely movable in the reaction chamber (220), wherein the reaction chamber (220) is configured to enable introducing light in the reaction chamber (220), wherein the reaction chamber (220) is configured to enable a mass-based position probability change of the solid photocatalytic elements (210) in the medium (206); and a recirculation system (226) configured to receive solid photocatalytic elements (210b) separated from the medium (206b), and to recirculate the separated solid photocatalytic elements (210b) to the mixing area (202).
C02F 1/32 - Traitement de l'eau, des eaux résiduaires ou des eaux d'égout par irradiation par la lumière ultraviolette
B01J 19/12 - Procédés utilisant l'application directe de l'énergie ondulatoire ou électrique, ou un rayonnement particulaireAppareils à cet usage utilisant des radiations électromagnétiques
C02F 1/72 - Traitement de l'eau, des eaux résiduaires ou des eaux d'égout par oxydation
B01J 21/06 - Silicium, titane, zirconium ou hafniumLeurs oxydes ou hydroxydes
C02F 1/38 - Traitement de l'eau, des eaux résiduaires ou des eaux d'égout par séparation centrifuge
C02F 1/00 - Traitement de l'eau, des eaux résiduaires ou des eaux d'égout
A method for transferring a component comprises providing a transfer assembly having the component, a carrier substrate and a connecting structure. The carrier substrate is transparent to laser radiation. The component is connected to the carrier substrate via the connecting structure. The connecting structure has at least one layer stack with a meltable layer composed of a meltable metal and a dewetting layer adjoining the meltable layer. The method further comprises positioning the transfer assembly over a target substrate. Furthermore, laser radiation is emitted in the direction of the at least one layer stack through the carrier substrate, such that melting of the meltable metal of the meltable layer and dewetting of the melted meltable metal from the dewetting layer are brought about, and the component is thereby separated from the carrier substrate and transferred to the target substrate.
H01L 21/683 - Appareils spécialement adaptés pour la manipulation des dispositifs à semi-conducteurs ou des dispositifs électriques à l'état solide pendant leur fabrication ou leur traitementAppareils spécialement adaptés pour la manipulation des plaquettes pendant la fabrication ou le traitement des dispositifs à semi-conducteurs ou des dispositifs électriques à l'état solide ou de leurs composants pour le maintien ou la préhension
63.
PHOSPHOR, OPTOELECTRONIC COMPONENT, AND METHOD FOR PRODUCING A PHOSPHOR
4-x-a-dx+a1-b-c19-y-x-3cy+x+3c29-y+a-3b-2dy-a+3b+2dy-a+3b+2d:A, wherein: - EA is selected from Ca, Sr, Ba, Zn, or combinations thereof; - SE is selected from the group of trivalent rare-earth elements or combinations thereof; - M is selected from Sc, Y, Lu, Tm, Er, Ho, or combinations thereof; - A is selected from Ce, Eu, Mn, Bi, Tb, Dy, Ni, Cr, Er, or combinations thereof; - 0 ≤ d ≤ 1; - 0 ≤ x+a+d ≤ 4; - 0 ≤ b+c < 1; - 0 ≤ y+x+3c ≤ 19; - 0 ≤ y-a+3b+2d ≤ 10; and - 2*(4-x-a-d) + 3*(x+a) + 3* (1-b-c)+ 4*(19-y-x-3c) + 3*(y+x+3c)-3*(29-y+a-3b-2d)-2*(y-a+3b+2d) = 0. The invention also relates to an optoelectronic component (10) and to a method for producing a phosphor (1).
C09K 11/77 - Substances luminescentes, p. ex. électroluminescentes, chimiluminescentes contenant des substances inorganiques luminescentes contenant des métaux des terres rares
H10H 20/851 - Moyens de conversion de la longueur d’onde
The invention relates to a light-emitting device (1) which comprises a light-generating structure. The light-generating structure comprises a semiconductor layer stack (2) having a first layer (3) of a first doping type, a second layer (4) of a second doping type, and an active region (5) between the first and the second layer. In addition, the light-generating structure has a first contact layer (7), which is provided on the lower face (9) of the semiconductor layer stack (2) and electrically contacts the second layer (4), and a second contact layer (18), which is provided at least partly on a lateral surface of the semiconductor layer stack (2), electrically contacts the first layer (7), and is electrically insulated from the active region (5) and the second layer (4). The light-generating structure is equipped with at least one cavity (22), which extends from the upper face (11) of the light-generating structure, said upper face lying opposite the first contact layer, in the direction of the first contact layer (7). The light-emitting device (1) additionally has a first electrical contact (6), which electrically contacts the first contact layer (7), and a second electrical contact (8), which electrically contacts the second contact layer (18). In addition, a converter layer (10) is provided in the at least one cavity (22), said converter layer being designed to convert light of a first wavelength, which is generated in the active region (5), into light of a second wavelength.
The invention concerns a light emitting device, in particular µLED array, comprising a semiconductor layer stack of at least a first layer of a first conductivity type, a second layer of a second conductivity type, and an active region comprising at least one quantum well arranged between the first and the second layer and being configured to emit light of a first wavelength. The semiconductor layer stack further comprises a top surface, a bottom surface opposite the top surface and at least one first side surface extending from the top surface into the direction of the bottom surface and laterally confining at least one light emitting portion of the semiconductor layer stack. In addition, the light emitting device comprises at least one continuous regrowth layer, in particular comprising at least one sub layer of the second conductivity type, with the regrowth layer covering the at least one first side surface and at least a portion of the top surface. The at least one first side surface is characterized that it comprises the second layer, the active region and at least 70% and in particular at least 90% of the thickness of the first layer.
The invention relates to an optoelectronic laser device comprising: a semiconductor layer stack having an active zone which is provided between a first layer of a first conductivity type and a second layer of a second conductivity type, at least one structure which is designed to constrict the current in the active zone for generating a laser radiation, and a first front face, which extends from a first upper face in the direction of a first lower face lying opposite the first upper face and has an exit window for the laser radiation generated in the active zone; a support substrate having an electrical via extending from a second upper face to a second lower face lying opposite the second upper face, and a second front face extending from the second lower face in the direction of the second upper face, wherein the second front face has a first portion adjoining the second upper face and a second portion set back from the first portion; and an electrical contact layer which is provided on the first lower face and is designed to be positioned on a contact element and which is electrically connected to the first layer. The first upper face and the second lower face are located next to each other in a contacting manner, and the electrical via is electrically connected to the second layer.
H01S 5/40 - Agencement de plusieurs lasers à semi-conducteurs, non prévu dans les groupes
H01S 5/22 - Structure ou forme du corps semi-conducteur pour guider l'onde optique ayant une structure à nervures ou à bandes
H01S 5/323 - Structure ou forme de la région activeMatériaux pour la région active comprenant des jonctions PN, p. ex. hétérostructures ou doubles hétérostructures dans des composés AIIIBV, p. ex. laser AlGaAs
67.
OPTOELECTRONIC COMPONENT, OPTOELECTRONIC ARRAY AND METHOD
The invention concerns an optoelectronic component, comprising a semiconductor layer stack comprising a first doped layer, a second doped region and an active region in between. The layer stack comprises mesa structured side facets of the active region and the first doped layer wherein the side facets form a first angle with regard to a plane normal to the active region. A semiconductor layer based on a nitride material system is regrown at least on side facets of the active region and the first doped layer and a surface portion of the first doped layer substantially parallel to the active region. The band gap of the regrown semiconductor layer is larger than a band gap of at least portions of the active region; and side surfaces of the regrown semiconductor layer form a third angle with regard to the plane normal onto the active region that is larger than the first and/or second angle. Finally, a contact layer is deposited on the second doped layer and at least partially extending on the regrown semiconductor layer.
H10H 20/817 - Corps caractérisés par des structures ou des orientations cristallines, p. ex. polycristallines, amorphes ou poreuses
H10H 20/825 - Matériaux des régions électroluminescentes comprenant uniquement des matériaux du groupe III-V, p. ex. GaP contenant de l’azote, p. ex. GaN
A device (10) for cleaning a medium (105) comprises a porous body (100), which contains a photocatalytic material (102), and a waveguide (110), which is designed to conduct electromagnetic radiation into the interior of the porous body (100).
B01D 53/88 - Manipulation ou montage des catalyseurs
C02F 1/32 - Traitement de l'eau, des eaux résiduaires ou des eaux d'égout par irradiation par la lumière ultraviolette
B01D 53/00 - Séparation de gaz ou de vapeursRécupération de vapeurs de solvants volatils dans les gazÉpuration chimique ou biologique des gaz résiduaires, p. ex. gaz d'échappement des moteurs à combustion, fumées, vapeurs, gaz de combustion ou aérosols
A UV reactor (10) for irradiating a medium (105) comprises an arrangement of LEDs (102), which are arranged on an outer wall (107) or in the interior of the UV reactor (10) and are each designed to irradiate the medium (105) to be irradiated with electromagnetic radiation having a wavelength of less than 390 nm. The UV reactor (10) further comprises a camera (111), which is arranged on an opposite or spaced outer wall (107) of the UV reactor (10) and is designed to detect electromagnetic radiation having a wavelength greater than 380 nm. The camera (111) is also designed to transmit a recorded image (122) of the arrangement of LEDs (102) to an evaluation device (112).
The invention relates to an optoelectronic component (100) comprising the following: - an enveloping material (30) which covers at least one component region (101) to be protected, - an optoelectronic structure (10) which is provided for emitting and/or receiving electromagnetic radiation and is at least partially covered or uncovered by the enveloping material (30), - and a stop device (20) which limits the enveloping material (30) to the at least one component region (101) to be protected, wherein the stop device (20) is interrupted in some regions.
A laser device (1) comprising a semiconductor laser (2) and a driving circuit (3) configured to operate the semiconductor laser (2) in pulsed operation is specified, wherein - the driving circuit (3) comprises a switch (T1) switchable between an open state and a closed state, - the driving circuit (3) comprises a first capacitor (C1) coupled to a power supply (5), - the switch (T1) is coupled to the first capacitor (C1), - the driving circuit (3) comprises a second capacitor (C2), - a p-contact (22) of the semiconductor laser (2) is capacitively coupled to the switch (T1) via the second capacitor (C2), - in the closed state of the switch (T1), the first capacitor (C1) is discharged via the second capacitor (C2) and the semiconductor laser (2) to produce a laser pulse, and - in the open state of the switch (T1), the second capacitor (C2) is discharged. Further, a method of operating a semiconductor laser (2) is specified.
An optoelectronic semiconductor body with a semiconductor layer sequence (2) based on a lll-V compound semiconductor material is specified, wherein: - the semiconductor layer sequence (2) comprises an n-doped layer (21) doped with a group VI dopant; - the semiconductor layer sequence (2) comprises an active region (20) configured to emit and/or absorb radiation; - the semiconductor layer sequence (2) comprises an interlayer (23) between the active region (20) and the n-doped semiconductor layer (21); and - the interlayer (23) comprises phosphorus (P) and at least one further group V material, preferably arsenic (As). An optoelectronic semiconductor chip (1) comprising the same is also specified. Finally, methods of producing the same are also specified.
H10H 20/824 - Matériaux des régions électroluminescentes comprenant uniquement des matériaux du groupe III-V, p. ex. GaP
H10H 20/816 - Corps ayant des structures contrôlant le transport des charges, p. ex. couches semi-conductrices fortement dopées ou structures bloquant le courant
H10H 20/812 - Corps ayant des structures ou des superréseaux à effet quantique, p. ex. jonctions tunnel au sein des régions électroluminescentes, p. ex. structures de confinement quantique
The invention relates to an optoelectronic semiconductor component (100) comprising: - an optoelectronic semiconductor chip (10) comprising - a semiconductor body (1) and - an electrical terminal region (5) with a first polarity, said terminal region being provided on the semiconductor body (1); - an electrical connection region (11) with a first polarity, said connection region being provided laterally to the optoelectronic semiconductor chip (10); - at least two connection elements (12), each of which electrically conductively connects the electrical terminal region (5) with the first polarity to the electrical connection region (11) with the first polarity, and - a casing (13) into which the optoelectronic semiconductor chip (10) and the at least two connection elements (12) are incorporated, wherein the connection elements (12) do not protrude beyond the casing (13) on a front face (100A) of the optoelectronic semiconductor component (100).
H10H 20/851 - Moyens de conversion de la longueur d’onde
H10H 20/853 - Encapsulations caractérisées par leur forme
H10H 20/857 - Interconnexions, p. ex. grilles de connexion, fils de connexion ou billes de soudure
H01L 25/16 - Ensembles consistant en une pluralité de dispositifs à semi-conducteurs ou d'autres dispositifs à l'état solide les dispositifs étant de types couverts par plusieurs des sous-classes , , , , ou , p. ex. circuit hybrides
74.
HIGH-SPEED OPTOELECTRONIC DEVICE AND METHOD FOR PROCESSING THE SAME
The invention concerns a method for processing an optoelectronic device comprising a plurality of semiconductor materials characterized by mismatched lattice parameters, wherein the light emitting layers are patterned to form strips that allow relaxation of strain within the semiconductor layers caused by the lattice mismatch, improving quantum efficiency. The patterning additionally serves to achieve significantly high densities of defects on the sidewalls of the semiconductor strips, allowing realization of higher modulation speeds through increased non-radiative recombination effects.
H10H 29/14 - Dispositifs intégrés comprenant au moins un composant émetteur de lumière à semi-conducteurs couvert par le groupe comprenant plusieurs composants émetteurs de lumière à semi-conducteurs
An optoelectronic device has a transparent carrier. The carrier has a two-dimensional arrangement of optoelectronic semiconductor chips. The optoelectronic semiconductor chips are electrically contacted by conductor tracks arranged on the carrier. At least some of the optoelectronic semiconductor chips are operable as light emitters in order to shine light at an eye. At least some of the optoelectronic semiconductor chips are operable as light receivers in order to detect light reflected at the eye.
H10F 55/00 - Dispositifs à semi-conducteurs sensibles au rayonnement couverts par les groupes , ou structurellement associés à des sources lumineuses électriques et électriquement ou optiquement couplés avec lesdites sources
G02B 27/00 - Systèmes ou appareils optiques non prévus dans aucun des groupes ,
H01L 25/075 - Ensembles consistant en une pluralité de dispositifs à semi-conducteurs ou d'autres dispositifs à l'état solide les dispositifs étant tous d'un type prévu dans une seule des sous-classes , , , , ou , p. ex. ensembles de diodes redresseuses les dispositifs n'ayant pas de conteneurs séparés les dispositifs étant d'un type prévu dans le groupe
H01L 25/16 - Ensembles consistant en une pluralité de dispositifs à semi-conducteurs ou d'autres dispositifs à l'état solide les dispositifs étant de types couverts par plusieurs des sous-classes , , , , ou , p. ex. circuit hybrides
H10F 77/00 - Détails de structure des dispositifs couverts par la présente sous-classe
An optoelectronic device comprises an optical component. The optical component comprises an entrance side. The entrance side comprises a first segment and a second segment. The first segment and the second segment are arranged at an angle to each other. The optoelectronic device comprises a first laser diode chip adapted for emitting a first laser beam towards the first segment. The entrance side of the optical component is oriented towards the first laser diode chip.
A Method for producing a conversion element (1) is specified. The method comprises providing a substrate (2) comprising chip regions (24), arranging a source wafer (3) above the substrate (2), wherein a source layer (4) comprising a conversion material (5) is arranged on a side of the source wafer (3) facing the substrate (2), depositing a part (51) of the conversion material (5) on the substrate (2) by irradiating the source wafer (3) with a laser radiation (6), wherein the part (51) of the conversion material (5) at least partially forms the conversion element (1), and wherein the depositing is configured to arrange different amounts of the conversion material (5) on different chip regions (24). Furthermore, an optoelectronic assembly (8) is disclosed. The optoelectronic assembly (8) may comprise a micro-LED.
An optoelectronic semiconductor component (1) comprising a semiconductor body (10) having a first region (101), a second region (102) and an active region (103) intended for the emission of electromagnetic radiation through an emission side (10A) of the semiconductor body (10) is described herein. The semiconductor body (10) comprises a rear side (10B) remote from the emission side (10A). The active region (103) comprises a quantum well region (1031) and a barrier region (1032). A deactivation region (200) is formed in the active region (103), in which an electrical bandgap of the quantum well region (1031) is increased. Furthermore, a method for manufacturing an optoelectronic semiconductor component (1) is provided.
H10H 20/813 - Corps ayant une pluralité de régions électroluminescentes, p. ex. LED à jonctions multiples ou dispositifs émetteurs de lumière ayant des régions photoluminescentes au sein des corps
H10H 20/816 - Corps ayant des structures contrôlant le transport des charges, p. ex. couches semi-conductrices fortement dopées ou structures bloquant le courant
79.
CASCADED LIDAR ARRANGEMENT AND LIDAR-BASED METHODS
The invention relates to an FMCW lidar-based arrangement for distance and/or speed measurement and to a lidar-based method for distance and/or speed measurement. The arrangement comprises a cascade of beam splitters associated with a plurality of measurement channels and a light return path for multi-channel LIDAR-based optical measurement of the distance and/or speed of a target object.
G01S 7/499 - Détails des systèmes correspondant aux groupes , , de systèmes selon le groupe utilisant des effets de polarisation
G01S 17/34 - Systèmes déterminant les données relatives à la position d'une cible pour mesurer la distance uniquement utilisant la transmission d'ondes continues, soit modulées en amplitude, en fréquence ou en phase, soit non modulées utilisant la transmission d'ondes continues modulées en fréquence, tout en faisant un hétérodynage du signal reçu, ou d’un signal dérivé, avec un signal généré localement, associé au signal transmis simultanément
G01S 17/58 - Systèmes de détermination de la vitesse ou de la trajectoireSystèmes de détermination du sens d'un mouvement
80.
OPTOELECTRONIC MODULE AND METHOD FOR PRODUCING AN OPTOELECTRONIC MODULE
The invention relates to an optoelectronic module including a first semiconductor component on an installation face of a first support, a second semiconductor component, and a third semiconductor component on an installation face of a second support. The semiconductor components are designed to emit electromagnetic radiation with different main wavelengths in a common emission direction. The installation face of the first support faces the installation face of the second support. The invention additionally relates to a method for producing an optoelectronic module.
An optoelectronic semiconductor component (1), comprising a semiconductor body (10) having a contact protrusion (20) and an active region (103) arranged between a first semiconductor region (101) and a second semiconductor region (102), is described herein. The active region (103) is configured to emit electromagnetic radiation through an emission side (10A) of the semiconductor body (10). The semiconductor body (10) extends into the contact protrusion (20) on a back side (10B) facing away from the emission side (10A). The contact protrusion (20) comprises a sidewall contact region (201) and a mirror region (202). The sidewall contact region (201) is arranged between the mirror region (202) and the back side (10B). The mirror region (202) forms an end face of the contact protrusion (20) and is electrically insulated from the semiconductor body (10). Further, a method for manufacturing an optoelectronic semiconductor component (1) is provided. The optoelectronic semiconductor component (1) can be formed as a micro-LED.
A structure is specified. According to one embodiment, the structure (1) comprises an emitter particle (2) configured to convert a primary radiation into a secondary radiation, and a barrier layer (3) at least partially surrounding the emitter particle (2), wherein the barrier layer (3) comprises a non-crystalline matrix (31) and a plurality of crystalline nanoparticles (32). Furthermore, an arrangement, a method for producing a structure, a method for producing an arrangement, and an optoelectronic device, in particular comprising a micro-LED, are specified.
The invention relates to a laser component comprising: a surface-emitting laser having at least one horizontal resonator and at least one laser-light emission surface which is substantially parallel to the horizontal resonator; and an optical element which is arranged downstream of the at least one laser-light emission surface in the emission direction of the surface-emitting laser. The optical element is integrally 3D-printed onto an upper face of the surface-emitting laser and is designed to direct laser light emitted from the at least one laser-light emission surface in such a way that it leaves the laser component substantially at an angle of 90° with respect to the at least one laser-light emission surface.
H01S 5/185 - Lasers à émission de surface [lasers SE], p. ex. comportant à la fois des cavités horizontales et verticales comportant uniquement des cavités horizontales, p. ex. lasers à émission de surface à cavité horizontale [HCSEL]
H01S 5/026 - Composants intégrés monolithiques, p. ex. guides d'ondes, photodétecteurs de surveillance ou dispositifs d'attaque
H01S 5/02255 - Découplage de lumière utilisant des éléments de déviation de faisceaux lumineux
84.
DEVICE, AIR FILTER ELEMENT, AND METHOD FOR MECHANICAL CLEANING OF PATHOGENS
Microelectromechanical device (2) for mechanical cleaning of pathogens, comprising • a body ( 6 ); • an actuatable membrane (10) arranged on said body (6); • an actuating element (60) arranged at an actuating side (20) of said membrane (10) for actuating the membrane; whereby on an active side (18) of said membrane (10) the membrane (10) comprises a surface structure with pillars (158) in the nanometer-micrometer range.
B06B 1/06 - Procédés ou appareils pour produire des vibrations mécaniques de fréquence infrasonore, sonore ou ultrasonore utilisant l'énergie électrique fonctionnant par effet piézo-électrique ou par électrostriction
A61L 9/16 - Désinfection, stérilisation ou désodorisation de l'air utilisant des phénomènes physiques
F24F 8/20 - Traitement, p. ex. purification, de l'air fourni aux locaux de résidence ou de travail des êtres humains autrement que par chauffage, refroidissement, humidification ou séchage par stérilisation
B08B 7/02 - Nettoyage par des procédés non prévus dans une seule autre sous-classe ou un seul groupe de la présente sous-classe par distorsion, battage ou vibration de la surface à nettoyer
The invention relates to an optoelectronic component, including the following features: an emitter, which is operated with an electrical input voltage and generates electromagnetic radiation during operation, a plurality of receivers, which form a receiver array, wherein the receiver array converts electromagnetic radiation emitted from the emitter during operation into an electrical output voltage, wherein radiation coupling-in surfaces of the receivers are located on a radiation coupling-out surface of the emitter, and a radiation-influencing element is disposed between the emitter and the receiver array, wherein the radiation-influencing element guides electromagnetic radiation generated by the emitter onto radiation coupling-out surfaces of the receivers.
The invention relates to an optical phase array with a signal input for supplying use light of a first wavelength and a first modulation input for supplying modulation light of a second wavelength. A first waveguide array with at least one signal output is connected to the signal input and comprises a material transparent to the use light and having a first bandgap. A second waveguide array connected to the first modulation input is arranged and designed in the vicinity of the first waveguide array in such a way as to guide modulation light onto the first waveguide array, the first band gap being smaller than the energy of the modulation light.
A radiation conversion element (1) comprising a first main face (11) and a second main face (12) opposite to the first main face (11) is specified, wherein the radiation conversion element (1) is configured to at least partly convert a primary radiation incident on the radiation conversion element (1) into a secondary radiation, wherein a radiation shaping structure (2) is formed on at least one of the first main face (11) and the second main face (12). Further, a method of producing a radiation conversion element (1) and an optoelectronic device (4) are specified.
H01L 33/50 - DISPOSITIFS À SEMI-CONDUCTEURS NON COUVERTS PAR LA CLASSE - Détails caractérisés par les éléments du boîtier des corps semi-conducteurs Éléments de conversion de la longueur d'onde
H01L 33/54 - Encapsulations ayant une forme particulière
88.
SEMICONDUCTOR LASER AND METHOD FOR MANUFACTURING A SEMICONDUCTOR LASER
A semiconductor laser with the following features is provided: - an epitaxial semiconductor layer sequence (2) based on a nitride compound semiconductor material comprising a p-doped region (5) and a n-doped region (6) and an active zone (7) arranged between the p-doped region (5) and the n-doped region (6), and - a mode pusher layer (13) arranged within the n-doped region (6) or adjacent to the n-doped region (6), wherein - the mode pusher layer (13) locates a mode (25) of the electromagnetic laser radiation (20) to overlap with a gain region (8) of the epitaxial semiconductor layer sequence (2) during operation, the gain region (8) being configured for generation of electromagnetic laser radiation (20) during operation, - the mode pusher layer (13) has at least one via (16). Further, a method for manufacturing a semiconductor laser is provided.
H01S 5/11 - Structure ou forme du résonateur optique comprenant une structure de bande photonique interdite
H01S 5/22 - Structure ou forme du corps semi-conducteur pour guider l'onde optique ayant une structure à nervures ou à bandes
H01S 5/32 - Structure ou forme de la région activeMatériaux pour la région active comprenant des jonctions PN, p. ex. hétérostructures ou doubles hétérostructures
H01S 5/323 - Structure ou forme de la région activeMatériaux pour la région active comprenant des jonctions PN, p. ex. hétérostructures ou doubles hétérostructures dans des composés AIIIBV, p. ex. laser AlGaAs
H01S 5/20 - Structure ou forme du corps semi-conducteur pour guider l'onde optique
A method for producing an optoelectronic device is provided, the method comprising: providing a semiconductor chip (10) that, in operation, emits electromagnetic radiation from a radiation exit surface (15), wherein the radiation exit surface (15) of the semiconductor chip (10) comprises a roughness (R) of at least 0.1 µm and at most 2 µm, forming a smoothened surface (16) on the radiation exit surface (15), and directly attaching a converter element (20) to the smoothened surface (16). Furthermore, an optoelectronic device is provided. The optoelectronic device may be an LED, for example, a micro-LED.
A light emitting device is provided including a wavelength conversion structure configured to convert electromagnetic radiation of a first wavelength in to an electromagnetic radiation of a second wavelength; a plurality of light sources, wherein at least one light source is configured to emit an electromagnetic radiation of the first wavelength, wherein the plurality of light sources are arranged on or above the wavelength conversion structure; and an optical metastructure configured as optical cavity comprising a resonance frequency at about the second wavelength.
H01S 3/063 - Lasers à guide d'ondes, p. ex. amplificateurs laser
H01S 3/0933 - Procédés ou appareils pour l'excitation, p. ex. pompage utilisant le pompage optique par de la lumière incohérente produite par un semi-conducteur, p. ex. une diode émettrice de lumière
H01S 3/23 - Agencement de plusieurs lasers non prévu dans les groupes , p. ex. agencement en série de deux milieux actifs séparés
H01S 3/102 - Commande de l'intensité, de la fréquence, de la phase, de la polarisation ou de la direction du rayonnement, p. ex. commutation, ouverture de porte, modulation ou démodulation par commande du milieu actif, p. ex. par commande des procédés ou des appareils pour l'excitation
91.
BEAM CONTROLLING LASER DEVICES AND METHODS FOR PRODUCING THEREOF
A vertical-cavity surface-emitting laser (VCSEL) includes a substrate, a first reflector structure formed above a first surface of the substrate, and a second reflector structure formed above the first surface of the substrate. Further, a multijunction active region is formed above the first surface of substrate between the first reflector structure and the second reflector structure. The multi-junction active region includes a plurality of multiple-quantum-wells (MQWs) regions and a plurality of oxide layers which each include a peripheral region and an aperture region. The peripheral region surrounds the aperture region. At an edge between the peripheral region and the aperture region a stress field of at least 2 Gigapascals is realized.
H01S 5/183 - Lasers à émission de surface [lasers SE], p. ex. comportant à la fois des cavités horizontales et verticales comportant uniquement des cavités verticales, p. ex. lasers à émission de surface à cavité verticale [VCSEL]
H01S 5/32 - Structure ou forme de la région activeMatériaux pour la région active comprenant des jonctions PN, p. ex. hétérostructures ou doubles hétérostructures
H01S 5/30 - Structure ou forme de la région activeMatériaux pour la région active
92.
OPTOELECTRONIC COMPONENT AND METHOD FOR PRODUCING AN OPTOELECTRONIC COMPONENT
Disclosed is an optoelectronic component having - a connection carrier (1), which comprises contact points (3) in a first housing material (2), - an electronic chip (4), which is electrically conductively connected to some of the contact points (3), a second housing material (5), which completely covers the electronic chip (2) and some of the contact points (3), and - at least one optoelectronic chip (6), which is arranged in a cavity (7) of the second housing material (5) and is electrically conductively connected to the electronic chip (4) and some of the contact points (3).
H10F 39/95 - Ensembles de plusieurs dispositifs comportant au moins un dispositif intégré couvert par le groupe , p. ex. comportant des capteurs d’images intégrés
H10H 29/24 - Ensembles de plusieurs dispositifs comprenant au moins un composant émetteur de lumière à semi-conducteurs couvert par le groupe comprenant plusieurs dispositifs émetteurs de lumière à semi-conducteurs
H10H 29/853 - Encapsulations caractérisées par leur forme
93.
OPTOELECTRONIC MODULE, APPLIANCE AND METHOD OF PRODUCING AN OPTOELECTRONIC MODULE
An optoelectronic module (1) is specified, comprising an optoelectronic semiconductor chip (2) configured to emit electromagnetic radiation and comprising a radiation exit side (20), a carrier (3) arranged on a side of the optoelectronic semiconductor chip (2) that faces away from the radiation exit side (20), and a circuit board (4) with a front side (41) and a rear side (42) opposite the front side (41),wherein - electrical contacts (33) of the carrier (3) are arranged on a first main face (31) of the carrier (3) facing the optoelectronic semiconductor chip (2); - the circuit board (4) comprises a cutout (44) with a stepped side face (45), so that the circuit board (4) comprises an intermediate surface (49) extending in parallel to and spaced apart from the rear side (42) and the front side (41) of the circuit board (4); - the circuit board (4) comprises electrical terminals (43) arranged on the intermediate surface; and - the electrical contacts (33) of the carrier (3) are electrically connected to the electrical terminals (43) of the circuit board (4). Further, an appliance (10) and a method of producing an optoelectronic module (1) are specified.
The invention relates to a UV irradiation unit (15) for purifying a medium (105), the UV irradiation unit comprising: a plurality of LEDs (102) that are arranged on a carrier (101); and a heat dissipation element (110) made of a first material, the heat dissipation element being in contact with the carrier (101) and being spaced from the medium (105) to be irradiated. The UV irradiation unit (15) also comprises a heat transfer element (115) made of a second material, the heat transfer element (115) being in contact with the heat dissipation element (110) and the medium (105) to be irradiated. A thermal conductivity of the first material is greater than or equal to the thermal conductivity of the second material.
An optoelectronic device comprises an optoelectronic semiconductor chip having an emission surface, and an optical resonator, which is located above the emission surface. The optoelectronic semiconductor chip has an emission spectrum with a peak wavelength. The optical resonator has a transmission spectrum, which has a transmission maximum at a resonant wavelength that depends on a transmission angle.
The invention concerns a light emitting device, in particular µLED, comprising a semiconductor layer stack of at least a first layer of a first conductivity type, a second layer of a second conductivity type, an active region comprising at least one quantum well arranged between the first and the second layer and being configured to emit light of a first wavelength, and at least one first sacrificial quantum well arranged adjacent to the active region between the active region and the second layer. The semiconductor layer stack comprises a top surface, a bottom surface opposite the top surface and at least one side surface extending from the top surface into the direction of the bottom surface and extending through at least the second layer, the at least one first sacrificial quantum well and the active region. The at least one first sacrificial quantum well thereby comprises a larger effective bandgap than the at least one quantum well of the active region. In addition, at least one regrowth layer, in particular of the second conductivity type, is arranged on the at least one side surface.
An optoelectronic device is specified including an emitter arranged to emit electromagnetic radiation and configured to be operated with an input voltage, a receiver arranged to receive the electromagnetic radiation and configured to provide at least part of an output voltage, wherein the emitter and the receiver are grown laterally adjacent to each other.
Disclosed herein is a laser device that includes at least one first ridge structure and at least one second ridge structure, wherein the first ridge structure is configured to emit laser radiation, the second ridge structure is configured to generate charge carriers in response to exposure to electromagnetic radiation, the second ridge structure is connectable or connected with a sense circuitry of the laser device, the first ridge structure extends parallel to a lateral direction, the second ridge structure extends parallel to the lateral direction, and the first ridge structure and the second ridge structure comprise the same materials. Furthermore, a method for operating a laser device is also disclosed.
The invention relates to an optoelectronic component, having a support and at least two lasers which are arranged on the support, wherein the surface area of a common beam outlet window of the optoelectronic component for the electromagnetic laser beam, which is generated during operation, of the at least two lasers equals at most 500×100 μm2 for an uncollimated electromagnetic laser beam or at most 1500×300 μm2 for a collimated electromagnetic laser beam.
A method for producing a growth substrate (1) is specified, the method comprising the following steps:
providing a substrate (2) with a main surface (3),
applying a semiconductor layer (4) comprising a nitride compound semiconductor material to the main surface (3) of the substrate (2),
inserting of impurity atoms of a first type into the semiconductor layer (4) by ion implantation,
tempering of the semiconductor layer (4) after inserting the impurity atoms of the first type.
A method for producing a growth substrate (1) is specified, the method comprising the following steps:
providing a substrate (2) with a main surface (3),
applying a semiconductor layer (4) comprising a nitride compound semiconductor material to the main surface (3) of the substrate (2),
inserting of impurity atoms of a first type into the semiconductor layer (4) by ion implantation,
tempering of the semiconductor layer (4) after inserting the impurity atoms of the first type.
A growth substrate and a radiation-emitting semiconductor chip are also specified.
H10H 20/825 - Matériaux des régions électroluminescentes comprenant uniquement des matériaux du groupe III-V, p. ex. GaP contenant de l’azote, p. ex. GaN
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