The invention relates to a semiconductor laser, wherein a radiation guiding element (3) is arranged on a laser diode (2), comprising including a material or consisting of a material that can be applied by means of the laser radiation (5) on the laser diode (2). In addition, a radiation transmission element (8), in particular a radiation outlet window (8a), for a semiconductor laser (1) is provided, wherein one or more optical elements (31) are arranged on a base element (80), comprising including a corresponding material. A laser housing (9) with a radiation outlet window (8a) of this type and a corresponding production method are also provided.
A radiation-emitting device includes a carrier formed to include sapphire and/or AlN. A semiconductor layer sequence is applied onto the carrier. A radiation outcoupling layer is arranged on the side of the carrier facing away from the semiconductor layer sequence, wherein the semiconductor layer sequence includes an active region for generating electromagnetic radiation, and wherein the radiation outcoupling layer has a refractive index for the electromagnetic radiation generated by the active region which is between the refractive index of the carrier and the refractive index of the medium surrounding the component. The radiation outcoupling layer is based on quartz glass. Furthermore, a method for manufacturing an optoelectronic device is disclosed.
An optoelectronic component includes a carrier, at least one optoelectronic semiconductor chip, which is arranged on the carrier, and a housing which comprises a molded body. The housing at least partially surrounds the optoelectronic semiconductor chip. A reflective layer is arranged on at least one side surface of the optoelectronic semiconductor chip, and the carrier includes vias.
The invention concerns a growth substrate, in particular in the form of a wafer, comprising a growth surface configured to epitaxially deposit a plurality of semiconductor material layers thereupon and an edge surface along at least portions of the periphery of the growth surface. The growth substrate also comprises a support surface opposite the growth side, said resting side configured to be arranged upon an in particular heatable plate. A circumferential side surface connects the support surface with the edge surface. In accordance with the proposed principle, the edge surface comprises a step adjacent to the growth surface such that the growth surface is elevated with regard to the edge surface.
In an embodiment a method includes providing a circuit board having a first main side and a second main side as well as metallic electrical contact structures located on the first main side, applying electrical compensation structures to the first main side directly on at least some of the contact structures, the compensation structures projecting beyond the respective one of the contact structures in the direction parallel to the first main side, wherein a distance between adjacent compensation structures assigned to one another is at most 50 μm and is smaller than a distance between adjacent contact structures assigned to one another, and applying at least one optoelectronic semiconductor chip directly to the compensation structures assigned to one another, wherein the contact structures and the assigned at least one semiconductor chip do not overlap when viewed from above on the first main side.
The invention relates to a laser package comprising a laser device configured to emit laser radiation through at least one laser facet on a front side surface of the laser device; an electrically conductive heat sink; and a contact layer between the laser device and the electrically conductive heat sink comprising a nanowire structure formed of an electrically conductive material. The contact layer comprises at least one first region and at least one second region, and the at least one first region has a higher material density of the electrically conductive material than the at least one second region. In addition, the at least one first region is arranged adjacent to the at least one laser facet.
In an embodiment a display unit includes a first contact layer, a second contact layer, a plurality of connection region and a plurality of optoelectronic semiconductor components, wherein the first contact layer has a plurality of row lines at a row spacing from one another, wherein the second contact layer has a plurality of column lines at a column spacing from one another, wherein the first contact layer and the second contact layer are arranged stacked, wherein each of the connection regions electrically conductively connects at least one row line to at least one column line, and wherein the row spacing deviates by less than 50% from the column spacing.
H01L 25/075 - Assemblies consisting of a plurality of individual semiconductor or other solid-state devices all the devices being of a type provided for in a single subclass of subclasses , , , , or , e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group
A structure (1) comprising a nanocrystal (2) converting electromagnetic radiation of a first wavelength range into electromagnetic radiation of a second wavelength range, and a barrier layer (3) at least partially surrounding the nanocrystal (2) is specified, wherein the barrier layer (3) is bonded to the nanocrystal (2), and the barrier layer (3) is configured to prevent oxygen and/or water reaching the nanocrystal (2). Furthermore, a method for producing a structure (1) and a light emitting component (7), in particular comprising a micro-LED, are specified.
Embodiments provide a method for processing an optoelectronic device, wherein the method includes providing a functional semiconductor layer stack with a conductive layer and hard mask layer located on the conductive layer. Both hard mask and conductive layer are structured, and a protective layer is arranged on sidewalls of the conductive layer. Then two dry etching and a wet etching process are performed to obtain an optoelectronic device. Portions of the hard mask layer on the conductive layer remain on the functional layer stack and form an integral part of the device.
In one embodiment, the optoelectronic semiconductor component comprises:—an optoelectronic semiconductor chip, and—a conversion element configured to convert at least part of a primary radiation emitted by the optoelectronic semiconductor chip during operation into a secondary radiation, wherein—the conversion element comprises a frame and a phosphor body within the frame,—the phosphor body comprises at least one phosphor and the frame contains at least one ceramic, and the frame is in direct contact with the phosphor body in a lateral direction which is oriented parallel to a main radiation side of the optoelectronic semiconductor chip.
The invention relates to an optoelectronic semiconductor laser component. The optoelectronic semiconductor laser component includes an epitaxial semiconductor layer sequence having an active region which is designed to generate first electromagnetic radiation in a first wavelength range. The optoelectronic semiconductor laser component further includes a photonic semiconductor layer which forms a two-dimensional photonic crystal and is designed to form a resonator for the first electromagnetic radiation, and a conversion element which is designed to convert the first electromagnetic radiation into second electromagnetic radiation in a second wavelength range. The emission direction is oriented transversely to the main plane of extent of the epitaxial semiconductor layer sequence. The first electromagnetic radiation exits from the photonic semiconductor layer in the emission direction. The first wavelength range is in the blue or ultraviolet spectral range. The invention also relates to an optoelectronic arrangement.
In an embodiment a micro semiconductor LED structure includes a first semiconductor layer of a first conductivity type, a second semiconductor layer of a second conductivity type, which is arranged on the first semiconductor layer, an active layer sequence including a first edge layer of the first conductivity type facing the first semiconductor layer and a second edge layer of the second conductivity type facing away from the first semiconductor layer and a third semiconductor layer of the second conductivity type, which is arranged at least on the active layer sequence, wherein the second semiconductor layer has at least one window, which penetrates through the second semiconductor layer from a side of the second semiconductor layer facing away from the first semiconductor layer toward the first semiconductor layer, wherein the first semiconductor layer has a recess in a region of the window, and wherein the active layer sequence is arranged at least in the recess.
The invention relates to an optoelectronic semiconductor component including a semiconductor body having a first region with a first conductivity, a second region with a second conductivity and an active region which is designed to emit coherent electromagnetic radiation. An optical resonator is formed along a resonator axis in the semiconductor body. The semiconductor body has a mounting side and side surfaces running transversely to the mounting side. Side surfaces running parallel to the resonator axis are covered by an electrically insulating passivation. A cooling layer which is designed to dissipate at least part of the power loss created in the semiconductor body during operation is arranged on a side of the passivation facing away from the semiconductor body. The invention also relates to an optoelectronic module.
The invention relates to an optoelectronic semiconductor device comprising a carrier, an optoelectronic semiconductor chip arranged on the carrier and a plurality of columns, wherein the plurality of columns are arranged on a base surface of the carrier opposite to the optoelectronic semiconductor chip, and wherein the plurality of columns cause a thermal heat conduction away from the optoelectronic semiconductor chip and the carrier. The invention further relates to a method for producing an optoelectronic semiconductor device.
In an embodiment a device for transferring at least one semiconductor component from a carrier substrate to a target substrate includes at least one lighting device configured to emit a first light pulse onto the semiconductor component to release it from the carrier substrate and to move it towards the target substrate, the semiconductor component comprising at least one contact surface, which corresponds to at least one contact surface on the target substrate and at least one of the contact surfaces comprising a solder material and to emit a second light pulse after the first light pulse, the second light pulse configured to melt the solder material on the at least one of the contact surfaces before the semiconductor component reaches the target substrate.
B23K 26/0622 - Shaping the laser beam, e.g. by masks or multi-focusing by direct control of the laser beam by shaping pulses
B23K 26/53 - Working by transmitting the laser beam through or within the workpiece for modifying or reforming the material inside the workpiece, e.g. for producing break initiation cracks
The invention relates to a laser component including a semiconductor laser chip having a laser facet with an active zone, and an optical element which is mounted after the semiconductor laser chip on the laser facet, wherein the semiconductor laser chip and the optical element are connected to each other by a welding connection that is free from welding additives.
The invention concerns a light emitting device comprising a semiconductor layer stack of at least a first layer of a first conductivity type, a second layer of a second conductivity type as well as an active region arranged between the first and the second layer. The semiconductor layer stack is of an InGaAlP material system. The active region comprises a quantum well arranged between a first and a second barrier layer and the active region comprises a central region and an edge region laterally surrounding the central region. Each of the central region and the edge region, and in particular a quantum well portion of the central region and the edge region, comprises a dotation with a first dopant such that the light emitting device is configured to emit light with a wavelength between 540 nm and 560 nm.
The invention concerns a light emitting device, in particular µLED, comprising a semiconductor layer stack with a first layer of a first conductivity type, a second layer of a second conductivity type, and an active region arranged between the first and the second layer. The semiconductor layer stack has a bottom surface, a top surface as well as side surfaces connecting the bottom surface and the top surface. The light emitting device further comprises a bottom contact layer arranged on the bottom surface of the semiconductor layer stack electrically contacting the second layer and a top contact layer arranged on the top surface of the semiconductor layer stack electrically contacting the first layer. A passivation structure encapsulates the semiconductor layer stack in a circumferential direction and covers the side surfaces of the semiconductor layer stack, the passivation structure comprising at least one anti-aging layer as well as at least one passivation layer, the passivation layer being arranged between the anti-aging layer and the side surfaces. A first end face of the passivation layer adjacent to the top surface is covered by one of the top contact layer, the anti-aging layer, or a further anti-aging layer.
H01L 33/44 - SEMICONDUCTOR DEVICES NOT COVERED BY CLASS - Details thereof characterised by the coatings, e.g. passivation layer or anti-reflective coating
An optoelectronic device for detecting a gas is specified. According to one embodiment, the optoelectronic device (1) for detecting a gas comprises a radiation-emitting element (4) configured for emitting an electromagnetic radiation, a measurement unit (5) comprising a measurement region (51) and a reference region (52), and a detector unit (6) comprising at least a first photodetector region (61) and a second photodetector region (62), wherein the measurement region (51) is arranged in a first beam path of the electromagnetic radiation between the radiation-emitting element (4) and the first photodetector region (61), wherein the reference region (52) is arranged in a second beam path of the electromagnetic radiation between the radiation-emitting element (4) and the second photodetector region (62), and wherein the optoelectronic device (1) is surface mountable. In particular, the radiation-emitting element (4) comprises a micro-LED.
G01N 21/78 - Systems in which material is subjected to a chemical reaction, the progress or the result of the reaction being investigated by observing the effect on a chemical indicator producing a change of colour
G01N 33/00 - Investigating or analysing materials by specific methods not covered by groups
G01N 21/77 - Systems in which material is subjected to a chemical reaction, the progress or the result of the reaction being investigated by observing the effect on a chemical indicator
20.
PHOTONIC DEVICE COMPRISING AN ORDERED PHOTONIC STRUCTURE INCLUDING A FLUORESCENT MATERIAL
A photonic device (10) comprises a light source (15) configured to emit pump radiation (17), a coupling region (106) comprising an ordered photonic structure (105) comprising a pattern of a first material (112) embedded in a matrix material (110), and a photonic integrated circuit (120). The first material (112) or the matrix material (110) is a fluorescent material. The fluorescent material is configured to receive the pump radiation (17) and to emit converted radiation (18) towards the photonic integrated circuit (120).
G02B 6/12 - Light guidesStructural details of arrangements comprising light guides and other optical elements, e.g. couplings of the optical waveguide type of the integrated circuit kind
B82Y 20/00 - Nanooptics, e.g. quantum optics or photonic crystals
G02B 6/122 - Basic optical elements, e.g. light-guiding paths
In an embodiment an optoelectronic package includes a carrier substrate having at least two through vias filled with an electrically conductive material, at least one optoelectronic component arranged on the carrier substrate, wherein the at least one optoelectronic component is configured to generate light in an ultraviolet range, and wherein the at least one optoelectronic component has at least two connection regions, each of which is electrically coupled to one of the two electrically conductive vias and a package material surrounding the at least one optoelectronic component, wherein the package material is based on a fluoropolymer and covers side surfaces of the at least one optoelectronic component at least in regions, and wherein a top surface of the at least one optoelectronic component opposite the connection regions remains free of the package material.
H10H 20/855 - Optical field-shaping means, e.g. lenses
H10H 20/857 - Interconnections, e.g. lead-frames, bond wires or solder balls
H10H 29/24 - Assemblies of multiple devices comprising at least one light-emitting semiconductor device covered by group comprising multiple light-emitting semiconductor devices
A mirror for a laser is specified, the mirror including a layer stack having at least a first layer containing a first material and at least a second layer containing a second material, the first material having a first refractive index and the second material having a second refractive index, the first refractive index and the second refractive index differing by at least 0.2, and the reflectivity of the mirror in the event of a first exit medium adjoining the mirror, the first exit medium being translucent at least at points to electromagnetic radiation at a specifiable wavelength, differing by less than 10% from the reflectivity of the mirror in the event of a second exit medium adjoining the mirror. the second exit medium differing from the first exit medium and being translucent at least at points to electromagnetic radiation at the specifiable wavelength, for a wavelength range of at least ±20 nm about the specifiable wavelength. Moreover, a laser and a laser component are specified.
The invention relates to a semiconductor body having an n-doped semiconductor layer (3), a p-doped semiconductor layer (4) and an active region (5). The active region (5) is arranged at least in some locations between the n-doped semiconductor layer (3) and the p-doped semiconductor layer (4). In a region (6) arranged on a side of the active region (5) facing away from the n-doped semiconductor layer (3), an electrode density is higher than a hole density. The invention also relates to a semiconductor laser and a method for producing a semiconductor laser.
H01S 5/30 - Structure or shape of the active regionMaterials used for the active region
H01S 5/02 - Structural details or components not essential to laser action
H01S 5/20 - Structure or shape of the semiconductor body to guide the optical wave
H01S 5/323 - Structure or shape of the active regionMaterials used for the active region comprising PN junctions, e.g. hetero- or double- hetero-structures in AIIIBV compounds, e.g. AlGaAs-laser
The invention relates to an optoelectronic device including a transmitter designed to emit electromagnetic radiation and to be operated with an input voltage, and a receiver designed to receive the electromagnetic radiation and to provide an output voltage, the transmitter including at least one surface emitter, and the receiver comprising at least one photodiode.
H02J 50/30 - Circuit arrangements or systems for wireless supply or distribution of electric power using light, e.g. lasers
H02J 50/40 - Circuit arrangements or systems for wireless supply or distribution of electric power using two or more transmitting or receiving devices
H10F 55/255 - Radiation-sensitive semiconductor devices covered by groups , or being structurally associated with electric light sources and electrically or optically coupled thereto wherein the electric light source controls the radiation-sensitive semiconductor devices, e.g. optocouplers wherein the radiation-sensitive devices and the electric light source are all semiconductor devices formed in, or on, a common substrate
The invention relates to a housing with a laser arrangement, having a lid, which comprises a portion transparent to laser radiation, and three substrates. Each substrate has at least one edge-emitting laser burr that is in the form of a resonator and has an output facet for the output of laser radiation at one wavelength, with the wavelengths of the laser burrs being different. At least one of the first, second and third substrates comprises at least one mirror element for deflecting, in the direction of the transparent portion, the laser radiation output by the corresponding edge-emitting laser burr. Moreover, each of the three substrates has a side face that is adjacent to the respective output facet or corresponds to the latter, and the side faces of two of the three substrates are at least partially adjacently opposite one another.
H01S 5/026 - Monolithically integrated components, e.g. waveguides, monitoring photo-detectors or drivers
H01S 5/185 - Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities having only horizontal cavities, e.g. horizontal cavity surface-emitting lasers [HCSEL]
H01S 5/40 - Arrangement of two or more semiconductor lasers, not provided for in groups
26.
OPTOELECTRONIC LIGHTING DEVICE AND PRODUCTION METHOD
The invention relates to an optoelectronic lighting device comprising a carrier, at least one light emitting semiconductor element which is arranged on a top surface of the carrier and is configured to emit light with a wavelength smaller than 550 nm, a mold compound which is substantially transparent to the light emitted by the semiconductor element and encapsulates the light emitting semiconductor element on the carrier, a frame which is arranged on the top surface of the carrier and projects beyond the light emitting semiconductor element in a direction perpendicular to the top surface of the carrier, and which delimits the mold compound in at least one spatial direction, and a cover element which is substantially transparent to the light emitted by the semiconductor element and which is arranged floating on the mold compound as seen in an emission direction of the optoelectronic lighting device.
The present disclosure relates to a circuit (200) including: an output terminal (208) configured to be coupled with a load; a power source (202) configured to generate current according to a current ramp, such that during a predefined time period the generated current assumes a plurality of different current values in a range of current values from a minimum current value to a maximum current value; a switch element (210) configured to selectively enable or disable a delivery of the generated current to the output terminal (208); and a control circuit (212) configured to control the switch element (210) to deliver a predefined average current value at the output terminal (208) over the predefined time period.
H05B 45/48 - Details of LED load circuits with an active control inside an LED matrix having LEDs organised in strings and incorporating parallel shunting devices
A device (1) is specified. The device (1) comprises an electronic component (2) with an outer surface (21), and a barrier structure (3) adjacent to the outer surface (21), wherein the barrier structure (3) at least partially surrounds at least parts of the outer surface (21), and the barrier structure (3) is configured to influence a lateral spreading of a medium (4) which is arranged on the outer surface (21). In particular, the electronic component is a micro-LED. Furthermore, a method for producing a device (1) is specified.
A display device includes a substrate; a first portion of a control matrix comprising first electrodes; a plurality of light-emitting diode (LED ) devices electrically connected to the first electrodes of the control matrix; a second portion of the control matrix disposed over the plurality of LED devices, the second portion of the control matrix comprising second electrodes; one or more controller chips comprising first and second terminals and arranged along a periphery of the control matrix electrically connected to the first electrodes of the control matrix and the second terminal electrically connected to the second electrodes of the control matrix; wherein the control matrix, and plurality of LED devices, and the one or more controller chips are disposed on the substrate.
H01L 25/075 - Assemblies consisting of a plurality of individual semiconductor or other solid-state devices all the devices being of a type provided for in a single subclass of subclasses , , , , or , e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group
H01L 25/16 - Assemblies consisting of a plurality of individual semiconductor or other solid-state devices the devices being of types provided for in two or more different subclasses of , , , , or , e.g. forming hybrid circuits
H10H 20/857 - Interconnections, e.g. lead-frames, bond wires or solder balls
H10H 29/49 - Interconnections, e.g. wiring lines or terminals
30.
OPTOELECTRONIC SEMICONDUCTOR COMPONENT, AND METHOD FOR PRODUCING AT LEAST ONE OPTOELECTRONIC SEMICONDUCTOR COMPONENT
An optoelectronic semiconductor component (1) is specified comprising a semiconductor layer stack (2) comprising a first semiconductor region (4), a second semiconductor region (6), and an active zone (5) which is arranged between the first and second semiconductor regions (4, 6), wherein the second semiconductor region (6) comprises a first semiconductor layer (7) and a second semiconductor layer (8), and the second semiconductor layer (8) is arranged on a side of the first semiconductor layer (7) facing away from the active zone (5), at least one depression (19) which extends from a first main surface (2A) of the semiconductor layer stack (2) through the first semiconductor region (4) and the active zone (5) and ends at the second semiconductor layer (8), wherein the first semiconductor layer (7) comprises a first compound semiconductor material and the second semiconductor layer (8) comprises a second compound semiconductor material, and the first compound semiconductor material has a higher aluminum content than the second compound semiconductor material. Furthermore, a method for producing such an optoelectronic semiconductor component (1) is specified.
H01L 33/30 - Materials of the light emitting region containing only elements of group III and group V of the periodic system
H01L 33/38 - SEMICONDUCTOR DEVICES NOT COVERED BY CLASS - Details thereof characterised by the electrodes with a particular shape
H01L 33/44 - SEMICONDUCTOR DEVICES NOT COVERED BY CLASS - Details thereof characterised by the coatings, e.g. passivation layer or anti-reflective coating
31.
COMPONENT HAVING IMPROVED PROPERTIES WITH REGARD TO WAVELENGTH BROADENING
A component including a carrier and exactly two semiconductor chips arranged next to one another on the carrier is specified, the exactly two semiconductor chips are each embodied as a double-emitter having exactly two emitter regions or each being embodied as a triple-emitter having exactly three emitter regions and are thus different from a single-emitter. The emitter regions of the component are assigned to the exactly two semiconductor chips, the exactly two semiconductor chips being laser diodes which each have ridges defining the emitter region. The exactly two semiconductor chips are electrically contacted via the carrier.
A LIDAR sensor device includes a first laser emitter configured to emit pulsed light of a first wavelength and at least one second laser emitter configured to emit pulsed light of at least a second wave-length different from the first wavelength, in the direction of an object located in front of the laser emitters respectively. Furthermore, the sensor device includes a receiving unit including at least one photodetector, as well as a first and at least one second optical bandpass filter, in particular a narrowband optical bandpass filter, wherein the first and the at least one second optical bandpass filter are arranged between the object and the at least one photodetector, and wherein the first bandpass filter is configured to allow substantially light of the first wavelength to pass and the at least one second band-pass filter is configured to allow substantially light of the at least one second wavelength to pass.
The invention relates to a laser package comprising a first laser diode for emitting light of a first wavelength and at least one second laser diode for emitting light of a second wavelength. The laser package also comprises a reflector module which is arranged in the beam path of the first and of the at least one second laser diode and which is configured to shape the light emitted by the laser diodes and to deflect it by at least 90° in the direction of an optical fiber with respect to an emission direction of the first and of the at least one second laser diode. The light guide runs essentially parallel to the emission direction and comprises an incoupling structure which is configured to couple the light deflected by the reflector module in the direction of the light guide into the light guide.
In an embodiment a target carrier for transferring semiconductor components includes a target substrate with at least two contact areas and a shrinkable collecting layer arranged around each of the at least two contact areas and projecting beyond the at least two contact areas, wherein a lateral distance between two opposite edges of the shrinkable collecting layer around each of the at least two contact areas is smaller than a lateral dimension of the at least one contact pad of the semiconductor components, wherein the shrinkable collecting layer around the at least two contact areas is designed such that its structuring is configured to penetrate into the shrinkable collecting layer with a substantially central alignment of the at least one contact pad relative to one of the at least two contact areas.
H10H 29/03 - Manufacture or treatment using mass transfer of LEDs, e.g. by using liquid suspensions
H01L 21/683 - Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereofApparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components for supporting or gripping
35.
ILLUMINATION AND SENSING UNIT, DISPLAY AND CONTROL DEVICE AND METHOD FOR OPERATING A DISPLAY AND CONTROL DEVICE
An illumination and sensing unit (1) comprising the following features is provided. - a first plurality of light emitting diode chips (2) configured for emitting visible light during operation, - a second plurality of light emitting diode chips (3, 3', 3'') operable to emit electromagnetic radiation of a first wavelength range or to detect electromagnetic radiation of the first wavelength range. Further, a display and control device and a method for operating a display and control device are provided.
G09G 3/32 - Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes for presentation of an assembly of a number of characters, e.g. a page, by composing the assembly by combination of individual elements arranged in a matrix using controlled light sources using electroluminescent panels semiconductive, e.g. using light-emitting diodes [LED]
36.
OPTOELECTRONIC SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD
In an embodiment an optoelectronic semiconductor device includes a semiconductor layer sequence having an active region oriented perpendicular to a growth direction of the semiconductor layer sequence and a passivation regrowth layer oriented at least in part oblique to the active region, wherein the passivation regrowth layer is located directly on the semiconductor layer sequence and runs across a lateral boundary of the active region, wherein the semiconductor layer sequence and the passivation regrowth layer are based on the same semiconductor material system, and wherein the semiconductor material system is InGaAlP or AlInGaAsP.
H10H 29/14 - Integrated devices comprising at least one light-emitting semiconductor component covered by group comprising multiple light-emitting semiconductor components
An automotive apparatus (100) includes a heatsink (110); a lighting module (120) coupled to the heat sink (110), the lighting module (120) comprising one or more light sources (125), a light source driver (124) for driving the one or more light sources (125); at least one microlens array (140) comprising a plurality of microlenses comprising a plurality of sections, wherein each microlens array section is configured to project an image (451, 452) using light from the one or more light sources (125); a collimating assembly (130) arranged between the lighting module (120) and the at least one microlens array (140) comprising: one or more collimators (335) corresponding respectively to the one or more light sources (125), wherein each of the one or more collimators (335) is aligned in a light path from a corresponding one of the one or more light source (125) and the at least one microlens array (140).
F21S 43/20 - Signalling devices specially adapted for vehicle exteriors, e.g. brake lamps, direction indicator lights or reversing lights characterised by refractors, transparent cover plates, light guides or filters
B60Q 3/60 - Arrangement of lighting devices for vehicle interiorsLighting devices specially adapted for vehicle interiors characterised by optical aspects
F21S 43/50 - Signalling devices specially adapted for vehicle exteriors, e.g. brake lamps, direction indicator lights or reversing lights characterised by aesthetic components not otherwise provided for, e.g. decorative trim, partition walls or covers
F21S 45/47 - Passive cooling, e.g. using fins, thermal conductive elements or openings
The invention concerns a light emitting device comprising a semiconductor layer stack with a first layer of a first doping type, a second layer of a second doping type, and an active region arranged between the first and the second layer. The light emitting device further comprises a bottom contact layer arranged on a bottom surface of the semiconductor layer stack electrically contacting the second layer, a first electric contact electrically contacting the bottom contact layer, and a second electric contact electrically contacting the first layer. On or above a top surface of the semiconductor layer stack opposite the bottom surface a converter layer is arranged being configured to convert light of a first wavelength generated in the active region into light of a second wavelength. The light emitting device further comprises measures to physically reduce the area where light escapes from the semiconductor layer stack into the converter layer, such that the converter layer can be designed smaller, in particular smaller than the lateral dimensions of the top surface.
H01L 33/44 - SEMICONDUCTOR DEVICES NOT COVERED BY CLASS - Details thereof characterised by the coatings, e.g. passivation layer or anti-reflective coating
The invention concerns a µLED arrangement comprising a layer stack having a first layer of a first doping type and second layer of a second doping type and an active layer structure in between. A first contact covers a surface of the first layer, said surface facing away from the active layer structure. A semiconductor layer forms a µlens deposited on a surface of the second layer, said surface facing away from the active layer structure. The layer stack comprises first mesa etched sidewalls, extending from the first layer along the active layer structure towards the second layer and second mesa etched sidewalls, said sidewalls forming the µlens.
H01L 33/20 - SEMICONDUCTOR DEVICES NOT COVERED BY CLASS - Details thereof characterised by the semiconductor bodies with a particular shape, e.g. curved or truncated substrate
H01L 33/00 - SEMICONDUCTOR DEVICES NOT COVERED BY CLASS - Details thereof
H01L 33/38 - SEMICONDUCTOR DEVICES NOT COVERED BY CLASS - Details thereof characterised by the electrodes with a particular shape
H01L 33/24 - SEMICONDUCTOR DEVICES NOT COVERED BY CLASS - Details thereof characterised by the semiconductor bodies with a particular shape, e.g. curved or truncated substrate of the light emitting region, e.g. non-planar junction
40.
SEMICONDUCTOR COMPONENT AND METHOD FOR PRODUCING A SEMICONDUCTOR COMPONENT
The invention relates to a semiconductor component (1) comprising: a housing (5) having a mounting face (6); a lead frame (2) which is embedded in the housing (5) and has at least two electrical contact pads (7, 8); and at least one semiconductor chip (13) which is located in the housing (5) and is electrically connected to the contact pads (7, 8). The lead frame (2) has a solder control structure (2) having a recess (11) which is accessible from the mounting face (6) and at least one side wall (10) of the housing (5) and is provided for receiving a solder material. The contact pads (7, 8) and the solder control structure (9) are formed by separate and non-connected portions of the lead frame (2).
An automotive apparatus includes a heatsink; a lighting module coupled to the heat sink, the lighting module comprising one or more light sources, a light source driver for driving the one or more light sources; at least one microlens array comprising a plurality of microlenses comprising a plurality of sections, wherein each microlens array section is configured to project an image using light from the one or more light sources; a collimating assembly arranged between the lighting module and the at least one microlens array comprising: one or more collimators corresponding respectively to the one or more light sources, wherein each of the one or more collimators is aligned in a light path from a corresponding one of the one or more light source and the at least one microlens array.
F21S 45/48 - Passive cooling, e.g. using fins, thermal conductive elements or openings with means for conducting heat from the inside to the outside of the lighting devices, e.g. with fins on the outer surface of the lighting device
F21S 41/153 - Light emitting diodes [LED] arranged in one or more lines arranged in a matrix
The invention concerns an optoelectronic device comprising a semiconductor layer stack of at least a first layer of a first conductivity type, a second layer of a second conductivity type as well as an active region between the first and second layer, the semiconductor layer stack comprising first side surfaces connecting a bottom surface and a top surface. The optoelectronic device further comprises a bottom contact element arranged on the bottom surface, a dielectric layer arranged on the first side surfaces and in particular extending partially onto the bottom surface, and a reflective contact layer arranged on the dielectric layer electrically contacting the bottom contact element. The dielectric layer thereby comprises second side surfaces opposite the first side surfaces with the second side surfaces having at least in portions a different angle relative to the bottom surface than the first side surfaces.
H01L 33/44 - SEMICONDUCTOR DEVICES NOT COVERED BY CLASS - Details thereof characterised by the coatings, e.g. passivation layer or anti-reflective coating
43.
OPTOELECTRONIC SEMICONDUCTOR ELEMENT AND OPTOELECTRONIC COMPONENT
An optoelectronic semiconductor element includes a semiconductor chip for generating electromagnetic radiation. The chip includes: a radiation decoupling surface through which first electromagnetic radiation is emitted in a first wavelength range during operation and a conversion layer which is disposed directly on the radiation decoupling surface of the semiconductor chip. The conversion layer completely covers the radiation decoupling surface and has a main surface which is opposite the radiation decoupling surface. The conversion layer includes at least one luminescent substance which is designed to convert at least a portion the of first electromagnetic radiation into second electromagnetic radiation of a second wavelength range, wherein the second wavelength range is different from the first wavelength range. An optical feedback element is disposed directly on the main surface of the conversion layer and is designed to reflect at least a portion of the first and/or the second electromagnetic radiation.
In an embodiment a semiconductor arrangement includes at least one semiconductor component with a functional layer stack. The functional layer stack includes a first layer of a first conductivity type, a second layer of a second conductivity type arranged on the first layer, an active zone located between the first and the second layer and an electrically conductive nanowire layer, wherein the electrically conductive nanowire layer is arranged at least in regions on a side of the second layer facing away from the first layer. The semiconductor arrangement further includes a holding layer with at least one elevation, wherein the at least one semiconductor component is arranged on the at least one elevation such that a cavity is formed between the at least one semiconductor component and the holding layer, and wherein the nanowire layer is at least partially exposed.
H10H 29/14 - Integrated devices comprising at least one light-emitting semiconductor component covered by group comprising multiple light-emitting semiconductor components
45.
SURFACE EMITTER AND METHODS FOR PRODUCING SURFACE EMITTERS
The invention relates to a surface emitter (100) and methods (200, 400, 600) for producing surface emitters (100), wherein one method for producing surface emitters comprises: providing a substrate structure, comprising: a substrate having a plurality of depressions and a plurality of ridges, each ridge of which is arranged between two depressions directly adjacent to one another from the plurality of depressions, and a plurality of epitaxial layers, each epitaxial layer being arranged over a ridge from the plurality of ridges and extending beyond the ridge in a lateral direction in such a way that each of the two depressions directly adjacent to one another forms an associated gap between the epitaxial layer and the substrate; forming a plurality of surface emitter structural elements by forming at least one surface emitter structural element over a top side of each epitaxial layer, said top side facing away from the substrate; and forming a mirror structure at least over the plurality of surface emitter structural elements and over exposed sections of an underside of each epitaxial layer, said underside facing the substrate. Figure 3A
H01S 5/183 - Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities having only vertical cavities, e.g. vertical cavity surface-emitting lasers [VCSEL]
H01S 5/323 - Structure or shape of the active regionMaterials used for the active region comprising PN junctions, e.g. hetero- or double- hetero-structures in AIIIBV compounds, e.g. AlGaAs-laser
46.
OPTOELECTRONIC COMPONENT, AND METHOD FOR MANUFACTURING AN OPTOELECTRONIC COMPONENT
The invention relates to an optoelectronic component comprising an optoelectronic semiconductor chip having an emission surface which is located on an upper side and is designed to emit light into an emission space. The emission surface is laterally delimited by a cover which has: a first portion that annularly delimits the emission surface; and a second portion. The cover is designed in such a way that light incident on the second portion of the cover from outside the optoelectronic component is predominantly reflected. Light emitted from the emission surface towards the cover is predominantly deflected by the cover in such a way that it is not specularly reflected into the emission space.
H10H 29/14 - Integrated devices comprising at least one light-emitting semiconductor component covered by group comprising multiple light-emitting semiconductor components
47.
TEST ARRANGEMENT AND TEST METHOD FOR MEASURING A SEMICONDUCTOR WAFER
A test arrangement (100) for measuring a semiconductor wafer (40) is specified, wherein the test arrangement (100) comprises : a carrier (1) for placing the semiconductor wafer (40), wherein the carrier (1) includes : an electrically insulating base body (2), a plurality of first conductive lines ( 3 ) and a plurality of second conductive lines ( 4 ), which are arranged on the base body (2) so as to face the semiconductor wafer (40) and which cross each other at crossing points (C), a test device (10), which comprises at least one pair of a first contact element (11) assigned to the first conductive lines (3) and a second contact element (12) assigned to the second conductive lines ( 4 ), wherein the at least one pair of the first contact element (11) and the second contact element (12) defines a test area (A) on the semiconductor wafer (40) comprising at least one crossing point (C), wherein the first conductive lines (3) are provided for supplying a driving current to the semiconductor wafer (40) at the crossing points (C), and the second conductive lines (4) are provided for determining an electrical characteristic value of the semiconductor wafer (40) at the crossing points (C). Moreover, a test method for measuring a semiconductor wafer is specified.
A method for operating a driver monitoring system with the following steps is provided: - defining a plurality of predetermined points (8) within a vehicle cabin (4), - illuminating the plurality of predetermined points (8) with the plurality of light dots (7) projected by the dot projector (2) according to a predetermined pattern (12), - detecting light of the light dots (7) reflected by the predetermined points (8) with the camera (3) such that a calibration pattern (9) is generated, - illuminating the vehicle cabin (4) with the plurality of light dots (7) projected by the dot projector (2) according to the predetermined pattern (12), - detecting the light of the light dots (7) reflected within the vehicle cabin (4) with the camera (3) such that an operation pattern (10) is generated, - comparing the operation pattern (10) with the calibration pattern (9), and - calibrating extrinsic parameters and/or intrinsic parameters of the dot projector (2) and/or extrinsic parameters and/or intrinsic parameters of the camera (3) when the operation pattern (10) differs from the calibration pattern (9). Further, a driver monitoring system is provided.
A lighting module including one or more light sources, a controller configured to cause the lighting module enter a first operating mode. When the lighting module is in the first operating mode, the controller is configured to allow the lighting module to receive messages. In response to receiving a skip message while the lighting module is in the first operating mode, the controller is configured to cause the lighting module to enter a second operating mode. In response to receiving a data message while the lighting module is in the first operating mode, the controller is configured to cause the lighting module to enter a third operating mode. When the lighting module is in the second operating mode, the controller is configured to cause the lighting module to retransmit or forward one or more messages received while in the second operating mode.
A light-emitting diode (LED) module includes one or more LEDs; communication circuitry configured to communicate with a plurality of LED modules using differential signaling; an input port and an output port for communicating using the differential signaling; testing circuitry configured to test a differential signaling connection through the input port or output port to determine a connection failure between the LED module and a neighboring LED module of the plurality of LED modules. The communication circuitry is configured to selectively switch, in response to the testing circuitry determining a connection failure of the differential signaling connection with the neighboring LED module, from communicating using differential signaling to communicating using single- ended signaling with the neighboring LED module.
H05B 47/18 - Controlling the light source by remote control via data-bus transmission
H05B 47/23 - Responsive to malfunctions or to light source lifeCircuit arrangements for operating light sources in general, i.e. where the type of light source is not relevant for protection of two or more light sources connected in series
The invention relates to an optoelectronic module (1), comprising a luminescence diode (10) which is designed to emit unpolarised emission radiation (101) in an emission angle range (β), and a functional element (20). The functional element (20) separates the emission radiation (101) into a first radiation (102A) with a first polarisation and a second radiation (102B) with a second polarisation. The first radiation (102A) and the second radiation (102B) emerge on a common output coupling side (20A) of the functional element (20). The functional element (20) deflects the first radiation (102A) into a first angular range (ω1) and the second radiation (102B) into a second angular range (ω2) different from the first angular range (ω1).
An optoelectronic component includes a semiconductor chip which during operation emits electromagnetic primary radiation of a first wavelength range, and at least one conversion element. The conversion element is designed to emit electromagnetic secondary radiation of a second wavelength range. The electromagnetic secondary radiation is in the infrared spectral range. The conversion element includes at least one wavelength-converting material and a matrix material. The wavelength-converting material is a rylene dye.
A detector is provided which includes at least the following features:
a substrate; and
at least a first detector element and a second detector element, which are arranged laterally next to one another on a main surface of the substrate, wherein
each of the detector elements includes an active semiconductor layer configured for converting electromagnetic radiation having a wavelength λ into an electrical signal,
each of the detector elements includes a first main surface and a second main surface opposite the first main surface, and
the first main surface and the second main surface are each configured for coupling in and for coupling out electromagnetic radiation of wavelength λ.
A detector is provided which includes at least the following features:
a substrate; and
at least a first detector element and a second detector element, which are arranged laterally next to one another on a main surface of the substrate, wherein
each of the detector elements includes an active semiconductor layer configured for converting electromagnetic radiation having a wavelength λ into an electrical signal,
each of the detector elements includes a first main surface and a second main surface opposite the first main surface, and
the first main surface and the second main surface are each configured for coupling in and for coupling out electromagnetic radiation of wavelength λ.
Furthermore, a lidar module and a method for operating a lidar module are specified.
G01S 7/481 - Constructional features, e.g. arrangements of optical elements
G01S 17/32 - Systems determining position data of a target for measuring distance only using transmission of continuous waves, whether amplitude-, frequency-, or phase-modulated, or unmodulated
54.
DISPLAY DEVICE FOR AMBIENT LIGHT SENSING AND METHODS OF OPERATING AND MANUFACTURING THEREOF
A display device (1) is provided that comprises a substrate (10) comprising a main surface (12) and a plurality of emitters (20) arranged in pixels (2) on the main surface (12) of the substrate (10), wherein each emitter (20) comprises a light emitting diode, LED, that is configured to emit light during operation. It further comprises a sensor (30) in at least one pixel (2), the sensor (30) being configured to sense light during operation. It further comprises a filter (70) arranged on or above the sensor (30), the filter (70) being configured to transmit light of a predetermined wavelength range to the sensor (30). Methods of operating and manufacturing such a display device (1) are also provided. The emitters and sensors can be implemented as micro-LEDs.
G09G 3/32 - Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes for presentation of an assembly of a number of characters, e.g. a page, by composing the assembly by combination of individual elements arranged in a matrix using controlled light sources using electroluminescent panels semiconductive, e.g. using light-emitting diodes [LED]
55.
DISPLAY DEVICE, METHOD OF OPERATING A DISPLAY DEVICE AND METHOD OF MANUFACTURING A DISPLAY DEVICE
A display device (1) comprises a substrate (10) comprising a main surface (12), and a plurality of emitters (20) arranged in pixels (2) on the main surface (12) of the substrate (10), wherein each emitter (20) comprises a light emitting diode LED, that is configured to emit light during operation. It further comprises a sensor (30) in at least one pixel (2), the sensor (30) being configured to sense light during operation. It further comprises at least one evaluation circuit (40) being configured to evaluate proximity of an object (100) above the display device (1) based on light sensed by the sensor (30). Further, a method of operating a display device (1) and a method of manufacturing a display device (1) is provided. The emitters and sensors can be implemented as micro-LEDs.
G06F 3/041 - Digitisers, e.g. for touch screens or touch pads, characterised by the transducing means
G06F 3/042 - Digitisers, e.g. for touch screens or touch pads, characterised by the transducing means by opto-electronic means
H01L 25/16 - Assemblies consisting of a plurality of individual semiconductor or other solid-state devices the devices being of types provided for in two or more different subclasses of , , , , or , e.g. forming hybrid circuits
56.
SURFACE EMITTER AND METHOD FOR PRODUCING A SURFACE EMITTER
The invention relates to a surface emitter (100) and to a method (300, 400) for producing a surface emitter (100), wherein the surface emitter (100) comprises in one embodiment: a substrate (108); a first mirror structure (104) and a second mirror structure (106), which are located above the substrate (108); a light-emitting structure (102), which is located between the first mirror structure (104) and the second mirror structure (106), wherein the light-emitting structure (102) is designed to emit light, and wherein the first mirror structure (104) and the second mirror structure (106) are designed to reflect the light emitted by the light-emitting structure (102); and a grid structure (110), which comprises a plurality of grid elements (112) which are arranged periodically and are embedded in the substrate (108), wherein the grid structure (110) is designed to stabilise the polarisation of the emitted light.
H01S 5/183 - Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities having only vertical cavities, e.g. vertical cavity surface-emitting lasers [VCSEL]
H01S 5/02 - Structural details or components not essential to laser action
57.
METHOD FOR PRODUCING AN OPTOELECTRONIC COMPONENT AND OPTOELECTRONIC COMPONENT
In an embodiment a method includes introducing a semiconductor chip and a cover body, arranged on an upper side of the semiconductor chip, into a mold, enclosing the semiconductor chip and the cover body in the mold with a molding compound, wherein side faces of the semiconductor chip, side faces of the cover body, and a top face of the cover body, which faces away from the semiconductor chip, are covered by the molding compound, at least partially curing the molding compound in order to form a molded body, removing the mold and thinning the molded body by a jet/beam process, wherein the molded body is removed from the top face of the cover body, and wherein the molded body has a cavity in a region of the projection after removing the mold.
A method for producing an optoelectronic component comprises providing a panel having a substrate and an encapsulation layer arranged on a top side of the substrate. The panel comprises a plurality of component sections. Each component section comprises a section of the substrate, an optoelectronic semiconductor chip arranged on a top side of the section of the substrate, a wavelength conversion layer arranged on a top side of the optoelectronic semiconductor chip and a section of the encapsulation layer embedding the optoelectronic semiconductor chip and the wavelength conversion layer. Top sides of the wavelength conversion layers are at least partly not covered by the encapsulation layer. The method further comprises forming a DBR layer on a top side of the encapsulation layer and on the top sides of the wavelength conversion layers and separating the component sections to obtain a plurality of optoelectronic components.
The invention concerns a µLED comprising a mesa etched layer stack with a first layer of a first doping type, a second layer of a second doping type having a main emission surface, an active layer arranged in between. A dielectric layer is disposed on inclined sidewalls of the first, second and active layer and partially a surface opposite the main emission surface. A first contact contacts through a first opening in the first layer and a second contact contacts through a second opening in the second layer. A mirror layer is embedded within the material of the dielectric layer disposed on the inclined sidewalls of the first, second and active layer and partially the surface opposite the main emission surface, the mirror layer laterally separated from the first and the second contact by a portion of the material of the dielectric layer.
The invention concerns a display arrangement comprising a pixel array having a plurality of pixels, at least some of the plurality of pixels each comprising two µLEDs configured for emitting light in the red spectrum with a first color filter comprising a large transmittance in the red spectrum arranged over a first of the two µLEDs and a second color filter comprising a large transmittance in the green spectrum arranged over a second of the two µLEDs. A third µLED is configured to emit light in the blue spectrum and a fourth µLED configured to emit light in the green spectrum. The display arrangement is configured to operate the at least some of the plurality of pixels such that during an emission mode, the first µLED, the third µLED and the fourth µLED are biased in forward direction; and during a sensing mode, the first µLED, the second µLED and the third µLED are biased in reverse direction.
G09G 3/32 - Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes for presentation of an assembly of a number of characters, e.g. a page, by composing the assembly by combination of individual elements arranged in a matrix using controlled light sources using electroluminescent panels semiconductive, e.g. using light-emitting diodes [LED]
G09G 3/20 - Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes for presentation of an assembly of a number of characters, e.g. a page, by composing the assembly by combination of individual elements arranged in a matrix
61.
DISPLAY ARRANGEMENT AND METHOD FOR OPERATING A DISPLAY ARRANGEMENT
The invention concerns a display arrangement comprising a pixel array with a plurality of pixels (10), at least some of the plurality of pixels each comprising a first and a second pLED for emitting light in the red spectrum (100r, 101r), a third pLED for light in the blue spectrum (100b) and a fourth pLED for light in the green spectrum (100g). The first and the second pLED are separated by one of the third and fourth LED. The display arrangement is configured to operate the at least some of the plurality of pixels in an emission mode, in which at least one of the first and second pLED, the third pLED and fourth pLED are biased in forward direction; and configured to operate a first subset of at least some of the plurality of pixels in a sensing mode, in which one of the third and fourth pLEDs of the first subset are biased in forward direction; and at least one of the first and second pLEDs of the first subset are biased in reverse direction or zero biased.
G09G 3/32 - Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes for presentation of an assembly of a number of characters, e.g. a page, by composing the assembly by combination of individual elements arranged in a matrix using controlled light sources using electroluminescent panels semiconductive, e.g. using light-emitting diodes [LED]
In at least one embodiment, the semiconductor laser includes a semiconductor layer sequence for generating laser radiation and a transparent substrate. The semiconductor layer sequence has a first facet which is designed for emitting the laser radiation, and a second facet opposite the first facet. The substrate has a first lateral surface on the first facet and a second lateral surface on the second facet. The first lateral surface is orientated at least in part obliquely to the first facet and/or the second lateral surface is orientated at least in part obliquely to the second facet.
H01S 5/10 - Construction or shape of the optical resonator
H01S 5/323 - Structure or shape of the active regionMaterials used for the active region comprising PN junctions, e.g. hetero- or double- hetero-structures in AIIIBV compounds, e.g. AlGaAs-laser
63.
SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING A SEMICONDUCTOR DEVICE
In an embodiment a semiconductor device includes a planar carrier having a main surface on which a semiconductor chip element is mounted, the semiconductor chip element having at least one semiconductor chip, at least one wire connection between the main surface of the carrier and a top surface of the at least one semiconductor chip, a first material completely enclosing the wire connection and comprising a first plastic material and a second material forming a frame and surrounding a cavity, wherein the top surface of the at least one semiconductor chip has a region that is free of the first and second materials and is arranged in the cavity, and wherein the top surface of the at least one semiconductor chip has a region that is free of any material.
An optoelectronic device is provided, which comprises a carrier (2), a housing (3), an optoelectronic component (4), and a reflective layer (5). The carrier (2) comprises a first part (21), a second part (22) and a third part (23), the first part (21) being located between the second part (22) and the third part (23) and being laterally spaced apart from the second part (22) and the third part (23). The housing (3) comprises a side wall (31) defining a cavity (32) and a bottom portion (33) in the cavity (32), the bottom portion (33) mechanically connecting the first part (21) to the second part (22) and the third part (23). The optoelectronic component (4) is arranged on a mounting surface (21a) of the first part (21). A boundary structure (6) is located between the side wall (31) of the housing (3) and the optoelectronic component (4), the boundary structure (6) being provided by the first part (21) of the carrier (2) and/or by the bottom portion (33) of the housing (3). The reflective layer (5) covers the side wall (31) of the housing (3) and the boundary structure (6), the boundary structure (6) being configured to prevent material of the reflective layer (5) from creeping onto the optoelectronic component (4). Further, a method for manufacturing an optoelectronic device is provided.
The invention concerns a display arrangement (1) comprising a pixel array with a plurality of pixels (10), at least some of the plurality of pixels each comprising first and a second μLED for light in the red spectrum, a third μLED for light in the blue spectrum and a fourth μLED for light in the green spectrum. The first and the second μLED are separated by one of the third and fourth LED. A control unit (13) is configured to operate the at least some of the plurality of pixels in a display mode, in which at least one of the first and second µLED, the third μLED and fourth μLED are biased in forward direction; and further configured to operate a first subset of at least some of the plurality of pixels in a sensing mode, in which the fourth μLED of the first subset are biased in forward direction; and pixels of a second subset partially adjacent to the pixels of the first subset in an adjusted sensing mode, in which at least one of the first and second μLEDs of the second subset are in reverse direction.
G09G 3/32 - Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes for presentation of an assembly of a number of characters, e.g. a page, by composing the assembly by combination of individual elements arranged in a matrix using controlled light sources using electroluminescent panels semiconductive, e.g. using light-emitting diodes [LED]
G06F 3/041 - Digitisers, e.g. for touch screens or touch pads, characterised by the transducing means
G06F 3/042 - Digitisers, e.g. for touch screens or touch pads, characterised by the transducing means by opto-electronic means
H01L 25/075 - Assemblies consisting of a plurality of individual semiconductor or other solid-state devices all the devices being of a type provided for in a single subclass of subclasses , , , , or , e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group
H01L 33/48 - SEMICONDUCTOR DEVICES NOT COVERED BY CLASS - Details thereof characterised by the semiconductor body packages
G06V 10/143 - Sensing or illuminating at different wavelengths
66.
SEMICONDUCTOR ELEMENT, SEMICONDUCTOR COMPONENT, AND METHOD FOR PRODUCING A SEMICONDUCTOR ELEMENT OR SEMICONDUCTOR COMPONENT
The invention relates to a semiconductor element (1) comprising the following: - a semiconductor chip (2), which has a first contact surface (21) and a second contact surface (22) on a bottom side (2B), wherein the first contact surface (21) and the second contact surface (22) are separated from one another by an intermediate space (27), - a carrier element (4) on which the semiconductor chip (2) is arranged, wherein the bottom side (2B) faces the carrier element (4), and - a connection layer (3), which - is arranged between the carrier element (4) and the semiconductor chip (2) and connects the semiconductor chip (2) to the carrier element (4), - is anisotropically electrically conductive and - horizontally overlaps with the first contact surface (21) and the second contact surface (22) and extends across the intermediate space (27). The invention also relates to a semiconductor component (10) having a plurality of semiconductor chips (2), and to a method for producing a semiconductor element (1) or semiconductor component (10).
H01L 25/075 - Assemblies consisting of a plurality of individual semiconductor or other solid-state devices all the devices being of a type provided for in a single subclass of subclasses , , , , or , e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group
H01L 33/62 - Arrangements for conducting electric current to or from the semiconductor body, e.g. leadframe, wire-bond or solder balls
67.
OPTOELECTRONIC SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING AN OPTOELECTRONIC SEMICONDUCTOR DEVICE
An optoelectronic semiconductor device (1) is specified with: - a semiconductor chip (2) which, in operation, emits electromagnetic radiation of a first wavelength range from a radiation exit surface (3), and - a color setting structure (4) comprising a matrix material (5), a conversion element (6) and a filter element (7), wherein the conversion element (6) converts at least the electromagnetic radiation of the first wavelength range into electromagnetic radiation of a second wavelength range, and the filter element (7) comprises a higher transmission for radiation of the first wavelength range compared to a radiation having a higher wavelength. Further, a method of manufacturing an optoelectronic semiconductor device is provided.
A method for producing a structure is specified. According to one embodiment, the method comprises providing a nanocrystal configured to convert a primary radiation into a secondary radiation, and forming an encapsulation around the nanocrystal using a coordination-complex, wherein the encapsulation comprises an oxide. Furthermore, a structure and an optoelectronic device are specified.
H01S 5/183 - Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities having only vertical cavities, e.g. vertical cavity surface-emitting lasers [VCSEL]
H01S 5/20 - Structure or shape of the semiconductor body to guide the optical wave
H01S 5/343 - Structure or shape of the active regionMaterials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers in AIIIBV compounds, e.g. AlGaAs-laser
70.
SEMICONDUCTOR CHIP, METHOD FOR PRODUCING A SEMICONDUCTOR CHIP AND ARRANGEMENT
A semiconductor chip includes an epitaxial semiconductor layer sequence, a solder layer arranged over a back side face of the epitaxial semiconductor layer sequence, a buffer layer arranged between the back side face of the epitaxial semiconductor layer sequence and the solder layer. The buffer layer includes a porous and/or rough metal.
Vertical cavity surface emitting laser component are provided, including a light emitting structure configured to emit a light of a frequency, and at least one mirror structure on or above the light emitting structure, wherein the mirror structure comprises a plurality of optical nano-elements, wherein the optical nano-elements are configured to comprise a first reflectivity for light of the frequency having a first chirality and a second reflectivity for light of the frequency having a second chirality, wherein the second chirality is opposing to the first chirality, and wherein the first reflectivity is larger than the second reflectivity.
H01S 5/183 - Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities having only vertical cavities, e.g. vertical cavity surface-emitting lasers [VCSEL]
Embodiments of the invention relate to a semiconductor chip (10), the sidewall (109) of which has a region which protrudes laterally by more than 2 µm in relation to a vertically adjoining sidewall region and forms an anchor structure (113). Further embodiments relate to a semiconductor component (20) comprising the semiconductor chip (10), a support (125) and an adhesive (128) for fastening the semiconductor chip (10) to the support (125). The adhesive (128) laterally adjoins the anchor structure (113) and extends vertically as far as a region of the anchor structure (113) that is remote from the support (125).
H01L 33/20 - SEMICONDUCTOR DEVICES NOT COVERED BY CLASS - Details thereof characterised by the semiconductor bodies with a particular shape, e.g. curved or truncated substrate
A vertical cavity surface emitting laser component is provided, including a light emitting structure configured to emit a light of a frequency, a dielectric layer on or above the light emitting structure; at least one mirror structure on or above the dielectric layer, and an encapsulation layer. The mirror structure includes a plurality of optical nano- elements. An interspace is formed between adjacent optical nano-elements. Any one of a structure of the optical nano- elements and an arrangement of the arrangement positions of the optical nano-elements are configured such that the plurality of nano-elements includes an optical resonance frequency corresponding to the frequency of the light emitted by the light emitting structure. The encapsulation layer is formed at least in the interspace between the plurality of optical nano-elements.
H01S 5/183 - Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities having only vertical cavities, e.g. vertical cavity surface-emitting lasers [VCSEL]
H01S 5/323 - Structure or shape of the active regionMaterials used for the active region comprising PN junctions, e.g. hetero- or double- hetero-structures in AIIIBV compounds, e.g. AlGaAs-laser
74.
µLED COMPRISING A MULTILAYER THIN-FILM LIGHT OUTCOUPLING STRUCTURE
The invention concerns an optoelectronic device, in particular μLED, comprising a semiconductor layer stack of at least a first layer of a first conductivity type, a second layer of a second conductivity type as well as an active region between the first and second layer, wherein the semiconductor layer stack comprises a bottom surface as well as a light emitting surface opposite the bottom surface. The optoelectronic device further comprises a light outcoupling structure arranged above or on the light emitting surface, the light outcoupling structure comprising at least a first, a second and a third layer wherein : at least two of the first, second and third layer comprise a material with a different refractive index; the first, second and third layer comprise a thickness of less than the wavelength of light generated within the semiconductor layer stack when applied with a respective current; and at least two of the first, second and third layer comprise a different thickness.
The invention concerns an optoelectronic device, in particular a µLED, comprising a layer stack based on a phosphide material system comprising a p-doped side and an n-doped side, respectively with an active layer in between. The layer stack comprises a mesa structure exposing sidewalls of at least p-doped side and the active layer. A layer of the n-doped side extends in a lateral direction beyond sidewalls of the mesa structure of the layer stack. A dielectric layer covers a sidewall area of the p-doped layers and optionally a portion of a top surface of p-doped side. An n-doped regrowth layer covers at least a portion of the sidewall of the active layer and contacting the n-doped side. The device also comprises a p-contact on the top surface of p-doped side and an n-contact facing away from a main emission side contacting the n-doped layer particularly laterally displaced in regard to the mesa structure.
H01L 33/00 - SEMICONDUCTOR DEVICES NOT COVERED BY CLASS - Details thereof
H01L 33/20 - SEMICONDUCTOR DEVICES NOT COVERED BY CLASS - Details thereof characterised by the semiconductor bodies with a particular shape, e.g. curved or truncated substrate
H01L 33/30 - Materials of the light emitting region containing only elements of group III and group V of the periodic system
H01L 33/44 - SEMICONDUCTOR DEVICES NOT COVERED BY CLASS - Details thereof characterised by the coatings, e.g. passivation layer or anti-reflective coating
76.
TWO-SIDED ETCHED LIGHT GENERATING STRUCTURE AND OPTOELECTRONIC DEVICE
The invention concerns a light generating structure comprising a semiconductor layer stack of at least a first layer of a first conductivity type, a second layer of a second conductivity type as well as an active region between the first and second layer. The semiconductor layer stack comprises a light emitting surface, a bottom surface opposite the light emitting surface and first side wall portions extending from the bottom surface into the direction of the light emitting surface. The first side wall portions comprise portions of the first layer, the second layer and the active region. The light generating structure further comprises a regrowth layer covering at least the bottom surface and the first side wall portions and a bottom contact element arranged on the regrowth layer opposite the first layer. The light generating structure comprises second side wall portions different from the first side wall portions extending from the light emitting surface into the direction of the bottom surface, wherein the second side wall portions comprise at least portions of the regrowth layer.
H01L 33/00 - SEMICONDUCTOR DEVICES NOT COVERED BY CLASS - Details thereof
H01L 33/02 - SEMICONDUCTOR DEVICES NOT COVERED BY CLASS - Details thereof characterised by the semiconductor bodies
H01L 33/20 - SEMICONDUCTOR DEVICES NOT COVERED BY CLASS - Details thereof characterised by the semiconductor bodies with a particular shape, e.g. curved or truncated substrate
77.
OPTOELECTRONIC ARRAY AND METHOD FOR MANUFACTURING AN OPTOELECTRONIC ARRAY
In an embodiment an optoelectronic array includes a first structured layer with a plurality of first regions, the first structured layer including a semiconductor material of a first doping type, a second structured layer with a plurality of second regions arranged on the first structured layer, the second structured layer including a semiconductor material of a second doping type and a plurality of active regions arranged between respective first and second regions forming optoelectronic elements, wherein first regions along a row of the plurality of rows are connected by first contact bridges, wherein second regions along a column of the plurality of columns are connected by second contact bridges, wherein the first contact bridges comprise a semiconductor material of the first doping type, and wherein the second contact bridges comprise a semiconductor material of the second doping type.
H01L 33/62 - Arrangements for conducting electric current to or from the semiconductor body, e.g. leadframe, wire-bond or solder balls
H01L 25/075 - Assemblies consisting of a plurality of individual semiconductor or other solid-state devices all the devices being of a type provided for in a single subclass of subclasses , , , , or , e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group
A method for operating a radiation emitting device with the following steps is provided: - determining a temperature corrected forward voltage (VfTcor(0,y)) of an edge pixel (7) arranged in an edge region (8) of the radiation exit area (1), - determining a position and temperature corrected forward voltage (Vincrease(0,y)) of the edge pixel (7) from the temperature corrected forward voltage (VfTcor(0,y)), - determining a position and temperature corrected forward voltage (Vincrease(40,160)) of a hot spot pixel (16) being arranged in a hot spot region (17) of the radiation exit area (1) from the position and temperature corrected forward voltage of the edge pixel, - determining a temperature of the hot spot pixel (16) from the position and temperature corrected forward voltage (Vincrease(40,160)) of the hot spot pixel (16).
H05B 45/56 - Circuit arrangements for operating light-emitting diodes [LED] responsive to malfunctions or undesirable behaviour of LEDsCircuit arrangements for operating light-emitting diodes [LED] responsive to LED lifeProtective circuits involving measures to prevent abnormal temperature of the LEDs
G09G 1/00 - Control arrangements or circuits, of interest only in connection with cathode-ray tube indicators
G09G 3/32 - Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes for presentation of an assembly of a number of characters, e.g. a page, by composing the assembly by combination of individual elements arranged in a matrix using controlled light sources using electroluminescent panels semiconductive, e.g. using light-emitting diodes [LED]
79.
PHOTO-POLYMERIZATION SYSTEM AND METHOD FOR PRODUCING A THREE-DIMENSIONAL OBJECT
A photo-polymerization system (10) comprises a vat (120) for housing a photocurable liquid (123) and an array of pixels (102). The array comprises a plurality of pixels (102), wherein each of the pixels (102) comprises a first and a second LED (105, 106) emitting different wavelengths, respectively. The array is arranged so as to be facing the vat (120).
B29C 64/135 - Processes of additive manufacturing using only liquids or viscous materials, e.g. depositing a continuous bead of viscous material using layers of liquid which are selectively solidified characterised by the energy source therefor, e.g. by global irradiation combined with a mask the energy source being concentrated, e.g. scanning lasers or focused light sources
B29C 64/194 - Processes of additive manufacturing involving additional operations performed on the added layers, e.g. smoothing, grinding or thickness control during lay-up
B29C 64/282 - Arrangements for irradiation using multiple radiation means, e.g. micromirrors or multiple light-emitting diodes [LED] of the same type, e.g. using different energy levels
A vertical cavity surface emitting laser, VCSEL, component is provided having a light emitting structure, at least one mirror structure, and a metallic layer arranged between the light emitting structure and the mirror structure, or acting as part of the mirror structure. The VCSEL component is configured to transmit light emitted from the light emitting structure towards the mirror structure through the metal layer. The metallic layer includes a grating and a continuous portion. The grating structure comprises a plurality of lines arranged adjacent to each other such that light emitted from light emitting structure passes through a spacing between adjacent lines of the grating structure towards the mirror structure. The plurality of lines also act as one electrical contact to the light emitting structure.
H01S 5/183 - Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities having only vertical cavities, e.g. vertical cavity surface-emitting lasers [VCSEL]
H01S 5/323 - Structure or shape of the active regionMaterials used for the active region comprising PN junctions, e.g. hetero- or double- hetero-structures in AIIIBV compounds, e.g. AlGaAs-laser
81.
OPTOELECTRONIC DEVICE AND METHOD FOR MANUFACTURING AN OPTOELECTRONIC DEVICE
The invention concerns an optoelectronic device comprising a semiconductor layer stack of at least a first layer of a first conductivity type, a second layer of a second conductivity type and an active region between the first and second layer. The first layer comprises a buried contact layer arranged between the active region and a light emitting surface of the semiconductor layer stack. The semiconductor layer stack comprises: a bottom surface opposite the light emitting surface; first side wall portions extending from the bottom surface into the direction of the light emitting surface until a level between the active region and the buried contact layer; second side wall portions extending from a level between the active region and the buried contact layer until the buried contact layer; and third side wall portions different from the first and second side wall portions extending from the buried contact layer into the direction of the light emitting surface. The optoelectronic device further comprises a material layer covering at least portions of the first side wall portions, a first contact element covering at least portions of the material layer and the second side wall portions electrically contacting the buried contact layer, and a second contact element electrically contacting the bottom surface.
H01L 33/14 - SEMICONDUCTOR DEVICES NOT COVERED BY CLASS - Details thereof characterised by the semiconductor bodies with a carrier transport control structure, e.g. highly-doped semiconductor layer or current-blocking structure
A photo-polymerization system (10) comprises a vat (120) for housing a photo-curable polymer (122), an array (103) of pixels (102), comprising a plurality of pixels (102), wherein each of the pixels (102) comprises an LED (106). The array (103) is arranged so as to be facing the vat (120). The photo- polymerization system (10) further comprises an array (105) of optical elements (104) comprising a plurality of optical elements (104). Each of the pixels (102) is assigned to a corresponding one of the optical elements (104), respectively. The array (105) of optical elements is arranged between the array (103) of pixels and the vat (120).
B29C 64/129 - Processes of additive manufacturing using only liquids or viscous materials, e.g. depositing a continuous bead of viscous material using layers of liquid which are selectively solidified characterised by the energy source therefor, e.g. by global irradiation combined with a mask
B29C 64/277 - Arrangements for irradiation using multiple radiation means, e.g. micromirrors or multiple light-emitting diodes [LED]
The present disclosure relates to a beam steering system (200) including: a first mirror arrangement (202) comprising a plurality of first mirrors (206) on a first rotatable support structure (212); a second mirror arrangement (204) comprising a plurality of second mirrors (208) on a second rotatable support structure (214), wherein a first mirror (206) directs an input light beam (218) towards the second mirror arrangement (204), and a second mirror (208) directs the input light beam (218) towards a field of view (210) as output light beam (220); and a control circuit (230) configured to: control a first rotational movement of the first rotatable support structure (212) at a first rotational speed, and a second rotational movement of the second rotatable support structure (214) at a second rotational speed, such that the output light beam (220) remains at fixed spatial coordinates in the field of view (210) until the first rotational movement causes another first mirror (206) to direct the input light beam (218) towards the second mirror arrangement (204).
Disclosed is a semiconductor laser with a vertical emission direction including a first active region and a first photonic crystal, wherein during operation of the semiconductor laser, first radiation emitted in the first active region is partially deflected into the vertical emission direction by means of the first photonic crystal, a second active region and a second photonic crystal, wherein during operation of the semiconductor laser, second radiation emitted in the second active region is partially deflected into the vertical emission direction by means of the second photonic crystal, and a connection region which is arranged in the vertical emission direction between the first active region and the second active region and connects the first active region and the second active region together in an electrically conductive manner. Also disclosed is a method for producing a semiconductor laser.
In an embodiment an optoelectronic semiconductor component includes at least one lamella with a longitudinal axis extending along an imaginary straight line and an electrically conductive main body with a recess, wherein the lamella includes a first semiconductor region of a first conductivity, a second semiconductor region of a second conductivity and an active region arranged between the first and the second semiconductor region, the active region being configured to emit a first electromagnetic radiation, wherein the lamella is arranged at least partially in the recess, and wherein the lamella has a length along the longitudinal axis which, within a manufacturing tolerance, corresponds to half a wavelength or an integer multiple of half the wavelength of the first electromagnetic radiation.
H01L 25/075 - Assemblies consisting of a plurality of individual semiconductor or other solid-state devices all the devices being of a type provided for in a single subclass of subclasses , , , , or , e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group
86.
LASER COMPONENT AND METHOD FOR PRODUCING A LASER COMPONENT
The invention relates to a laser component comprising: an edge-emitting semiconductor laser chip having an active zone and having a laser facet adjoining the active zone; and an optical element which is arranged downstream of the laser facet in the emission direction of the edge-emitting semiconductor laser chip. A front face of the edge-emitting semiconductor laser chip and the optical element are interconnected by means of a welded joint which is free of filler materials, and the laser facet is set back in relation to the front face.
In an embodiment a light emitting component includes at least one edge-emitting semiconductor element having a laser facet, wherein the edge-emitting semiconductor element is arranged on a carrier and is at least partially surrounded by a cap, which comprises a light emitting surface in a beam direction, wherein the cap is made by a vacuum injection molding process, and wherein the light emitting surface directly adjoins the laser facet of the edge-emitting semiconductor element.
The invention concerns a method for processing an optoelectronic device, wherein a sacrificial layer is deposited covering the sidewalls of a mesa etched semiconductor layer stack. The sacrificial layer may comprise an organic material and is subsequently planarized and recessed are formed therein. A bond layer is deposited into the recess, the bond layer in particular comprising one of an organic material, a nitride-based material, a solder material and a gold alloy. A temporary carrier is attached to the bond layer and the growth substrate removed, thereby exposing portions of the sacrificial layer and the semiconductor layer stack.
H01L 33/00 - SEMICONDUCTOR DEVICES NOT COVERED BY CLASS - Details thereof
H01L 33/44 - SEMICONDUCTOR DEVICES NOT COVERED BY CLASS - Details thereof characterised by the coatings, e.g. passivation layer or anti-reflective coating
A touch-sensitive arrangement includes a carrier, an electrode layer, at least one light-emitting semiconductor body, and an encapsulation layer. The electrode layer is arranged between the carrier and the encapsulation layer and includes a first number N of detection areas and a second number M of illuminating areas. A detection area of the first number N of detection areas includes a first electrode. An illuminating area of the second number M of illuminating areas includes a first and a second contact connection line. The first contact connection line is coupled to a first terminal of the at least one light-emitting semiconductor body and the second contact connection line is coupled to a second terminal of the at least one light-emitting semiconductor body.
H01L 33/62 - Arrangements for conducting electric current to or from the semiconductor body, e.g. leadframe, wire-bond or solder balls
G06F 3/041 - Digitisers, e.g. for touch screens or touch pads, characterised by the transducing means
G06F 3/042 - Digitisers, e.g. for touch screens or touch pads, characterised by the transducing means by opto-electronic means
G06F 3/044 - Digitisers, e.g. for touch screens or touch pads, characterised by the transducing means by capacitive means
H01L 25/075 - Assemblies consisting of a plurality of individual semiconductor or other solid-state devices all the devices being of a type provided for in a single subclass of subclasses , , , , or , e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group
90.
OPTOELECTRONIC SEMICONDUCTOR DEVICE COMPRISING A BLOCKING LAYER
H01L 33/12 - SEMICONDUCTOR DEVICES NOT COVERED BY CLASS - Details thereof characterised by the semiconductor bodies with a stress relaxation structure, e.g. buffer layer
H01L 31/0304 - Inorganic materials including, apart from doping materials or other impurities, only AIIIBV compounds
H01L 33/30 - Materials of the light emitting region containing only elements of group III and group V of the periodic system
91.
METHOD FOR PRODUCING AN OPTOELECTRONIC SEMICONDUCTOR COMPONENT, AND OPTOELECTRONIC SEMICONDUCTOR COMPONENT
Proposed is a method for producing an optoelectronic semiconductor component (10), comprising: applying (S100) a passivation layer (100) over a surface (101) of a semiconductor layer stack (112) that comprises a first semiconductor layer (110) of a first conductivity type, an active zone (115) and a second semiconductor layer (120) of a second conductivity type, such that the passivation layer (100) is arranged adjacent to the first semiconductor layer (110). The method furthermore comprises: structuring (S110) the passivation layer (100), whereby openings (102) are formed in the passivation layer (100), which extend to the first semiconductor layer (110); applying (S120) a metallisation layer (105) over the passivation layer (100), the metallisation layer (105) being in contact with the first semiconductor layer (110) in the region of the openings (102); and structuring (S130) the metallisation layer (105) by ion beam etching, whereby first contact elements (107) are formed in contact with the first semiconductor layer (110).
H01L 33/00 - SEMICONDUCTOR DEVICES NOT COVERED BY CLASS - Details thereof
H01L 33/38 - SEMICONDUCTOR DEVICES NOT COVERED BY CLASS - Details thereof characterised by the electrodes with a particular shape
H01L 33/44 - SEMICONDUCTOR DEVICES NOT COVERED BY CLASS - Details thereof characterised by the coatings, e.g. passivation layer or anti-reflective coating
92.
OPTOELECTRONIC ELEMENT AND METHOD FOR PRODUCING AN OPTOELECTRONIC ELEMENT
An optoelectronic element includes a carrier, a semiconductor chip with an active layer for generating electromagnetic radiation, and an encapsulation element. The semiconductor chip is arranged on a main surface of the carrier. The encapsulation element is arranged on the main surface of the carrier, such that the optoelectronic element includes an intermediate space between the main surface of the carrier and the encapsulation element. The semiconductor chip is arranged in the intermediate space. The intermediate space is at least partially filled with hollow beads.
A collimating metalens (15) comprises a transparent substrate (100) having a first main surface (101) and a second main surface (102). The first and the second main surfaces (101, 102) are parallel to a first direction and a second direction, the first direction being perpendicular to the second direction. The collimating metalens (15) further comprises a first metasurface (108) formed on the first main surface (101), the first metasurface (108) comprising a first region (111). The collimating metalens (15) further comprises a second metasurface (109) formed on the second main surface (102), the second metasurface (109) comprising a second region (112). The first region (111) acts as a cylindrical concave lens, and the second region (112) acts as a convex lens.
A surface emitting semiconductor laser is disclosed that includes a semiconductor layer sequence having an active layer for generating laser radiation, a carrier substrate on one side of the semiconductor layer sequence, and an optical structure for influencing at least one degree of freedom of the laser radiation. The carrier substrate is different from a growth substrate of the semiconductor layer sequence and the growth substrate is at least partly removed. The optical structure has a varying refractive index in a lateral direction for the laser radiation.
H01S 5/11 - Comprising a photonic bandgap structure
H01S 5/183 - Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities having only vertical cavities, e.g. vertical cavity surface-emitting lasers [VCSEL]
H01S 5/343 - Structure or shape of the active regionMaterials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers in AIIIBV compounds, e.g. AlGaAs-laser
95.
DISINFECTION DEVICE, ARRANGEMENT AND OPERATION METHOD
In at least one embodiment, the disinfection device comprises: —a housing body, —a semiconductor chip located in the housing body and configured to emit ultraviolet C radiation (UVC), and—a security sensor located in the housing body, wherein—the housing body forms a radiation shield preventing the ultraviolet C radiation (UVC) from leaving the disinfection device, —the housing body comprises an opening configured for actuating a button by a user, to actuate the button the user has to grasp into the opening, —the semiconductor chip is configured to irradiate at least part of the opening and/or the button, and—the disinfection device is configured as an attachment device to be disposed over the button.
F21V 9/32 - Elements containing photoluminescent material distinct from or spaced from the light source characterised by the arrangement of the photoluminescent material
96.
LUMINOPHORE, LUMINOPHORE MIXTURE, METHOD FOR PRODUCING A LUMINOPHORE AND RADIATION-EMITTING COMPONENT
H05B 33/14 - Light sources with substantially two-dimensional radiating surfaces characterised by the chemical or physical composition or the arrangement of the electroluminescent material
97.
SOLDER BONDING ON AuSn BASIS WITH LOW BONDING TEMPERATURE
The present invention relates to an electronic component comprising: a substrate, an optoelectronic component, a first intermetallic layer consisting of tin and nickel, a second intermetallic layer comprising tin and titanium, a third intermetallic layer comprising tin and gold, whereby the amount of tin and gold in the third intermetallic layer is approximately the same. The invention also relates to a method of manufacturing an electronic component and the use of an electronic component.
In embodiments a method includes providing a functional semiconductor layer stack and depositing a first material on the surface, in particular a transition element oxide. A structured hard mask stack is deposited on the first material, wherein the structured hard mask stack includes a first layer and at least a second layer on the first layer with sidewalls of at least the first layer covered by a second material, wherein the second layer and the second material are resilient against a wet chemical etching process. Two anisotropic dry chemical etching processes and a wet etching process is performed to provide a deep mesa structure in the functional layer stack, wherein the second layer protects the first layer during the wet etching process.
A method for determining a substance concentration in a particle-containing liquid, in particular of glucose in blood, wherein a refractive index of the liquid is dependent on a concentration of the substance dissolved therein, includes emitting a measuring light beam of at least one wavelength onto a sample containing the liquid. The method also includes detecting a first light component scattered by scattering on the particles contained in the liquid at a first angle, which corresponds in particular to a forward scattering of the light component. The method further includes detecting a second light component scattered at a second angle by the particles contained in the liquid. The method additionally includes determining a concentration or a proportion of the substance in the liquid from the detected first and second light components, in particular by forming a ratio from the detected first and second light components.
A61B 5/1455 - Measuring characteristics of blood in vivo, e.g. gas concentration or pH-value using optical sensors, e.g. spectral photometrical oximeters
A61B 5/145 - Measuring characteristics of blood in vivo, e.g. gas concentration or pH-value
C30B 25/14 - Feed and outlet means for the gasesModifying the flow of the reactive gases
C23C 16/455 - Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into the reaction chamber or for modifying gas flows in the reaction chamber
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