A method for manufacturing a laminated inductor capable of reducing the number of laminated layers in manufacturing the laminated inductor. A method for manufacturing a laminated inductor includes preparing a plurality of first sheets A each including a conductor portion and a magnetic portion formed on a lower side of a magnetic sheet, and a first via portion penetrating the magnetic sheet on an upper side of the conductor portion; and laminating the plurality of first sheets A to form a first coil layer including a first coil to which the conductor portion is electrically connected with the first via portion interposed therebetween.
In a circuit module, a lower circuit board, when viewed in an up-down direction, overlaps with a portion of an upper circuit board. The upper circuit board, the lower circuit board, and a sealing member configure a main body portion including an upper surface, a lower surface, and a side surface connecting the upper surface and the lower surface. A shield member covers the upper surface and the side surface. When viewed in the up-down direction, the first component is located outside an outer end of the lower circuit board. A lower end of the first component is located below a second upper principal surface. When viewed in the up-down direction, a component mounted on the first lower principal surface or a connection member mounted on the first lower principal surface is absent between the side surface located closest to the first component and the first component.
A piezoelectric vibration element according to an exemplary aspect of the present disclosure includes a piezoelectric piece having a first main surface and a second main surface. The first main surface and the second main surface face each other in a facing direction. The piezoelectric vibration element also includes a first excitation electrode on the first main surface and a second excitation electrode on the second main surface. In a plan view in the facing direction, a first area of the first excitation electrode is smaller than a second area of the second excitation electrode, and a part of the second excitation electrode overlaps an entirety of the first excitation electrode, and a first thickness of the first excitation electrode along the facing direction is smaller than a second thickness of the second excitation electrode along the facing direction.
A load sensor that includes: an upper housing having an upper face portion, and a lateral face portion that extends in the thickness direction from an outer periphery of the upper face portion; a lower housing having a lower face portion that faces the upper face portion in the thickness direction, the lower housing being less elastically deformable than the upper housing; and a piezoelectric resonator in a space between the upper housing and the lower housing, wherein an end portion of the upper housing and an end portion of the lower housing are fixed to each other with a crimp such that the upper housing is elastically deformed and causes a preload to be applied by the upper housing to the piezoelectric resonator in the thickness direction.
G01L 1/16 - Mesure des forces ou des contraintes, en général en utilisant les propriétés des dispositifs piézo-électriques
H03H 3/02 - Appareils ou procédés spécialement adaptés à la fabrication de réseaux d'impédance, de circuits résonnants, de résonateurs pour la fabrication de résonateurs ou de réseaux électromécaniques pour la fabrication de résonateurs ou de réseaux piézo-électriques ou électrostrictifs
A secondary battery is provided and includes an exterior member having flexibility, and a positive electrode, a negative electrode, and an electrolytic solution that are housed in the exterior member. The electrolytic solution contains a solvent and an electrolyte salt, and the solvent contains propyl acetate and propyl propionate. The ratio of the content of propyl acetate in the solvent to the sum of the content of propyl acetate in the solvent and the content of propyl propionate in the solvent is 0.1 or more and 0.5 or less.
H01M 10/0569 - Matériaux liquides caracterisés par les solvants
H01M 10/0525 - Batteries du type "rocking chair" ou "fauteuil à bascule", p. ex. batteries à insertion ou intercalation de lithium dans les deux électrodesBatteries à l'ion lithium
H01M 10/0567 - Matériaux liquides caracterisés par les additifs
A control unit includes a CPU as an execution unit and a storage. The storage stores vibration mode data indicating multiple vibration modes used for rehabilitation. The storage stores model data which determines a learning model. A body condition variable indicating body information of a user is input into the learning model and a mode variable is output from the learning model. The mode variable indicates a pattern of a vibration mode that represents a tactile/force sense to output from a haptic device. The model data is learned data obtained by machine learning. In obtaining processing, the CPU obtains multiple body condition variables of the user. In mode selection processing, the CPU selects a specific mode, based on mode variables output by using the multiple body condition variables obtained in the mode obtaining processing as input variables. In driving processing, the CPU drives a vibrator by using the specific mode.
G05B 13/02 - Systèmes de commande adaptatifs, c.-à-d. systèmes se réglant eux-mêmes automatiquement pour obtenir un rendement optimal suivant un critère prédéterminé électriques
A coil component includes a core including a winding core portion and a first flange portion, a first wire and a second wire that are wound around the winding core portion in the same direction, and a first terminal electrode that is disposed on the first flange portion and that is connected to a first end portion of the first wire. The shape of an outer edge of the first terminal electrode includes a convex curve.
H01F 41/04 - Appareils ou procédés spécialement adaptés à la fabrication ou à l'assemblage des aimants, des inductances ou des transformateursAppareils ou procédés spécialement adaptés à la fabrication des matériaux caractérisés par leurs propriétés magnétiques pour la fabrication de noyaux, bobines ou aimants pour la fabrication de bobines
8.
SOLID ELECTROLYTIC CAPACITOR AND METHOD OF MANUFACTURING SOLID ELECTROLYTIC CAPACITOR
A solid electrolytic capacitor including: a plurality of capacitor elements, each capacitor element having: a flat film-shaped main body including a valve metal, a dielectric layer on the main body, and a solid electrolyte layer on at least a part of the dielectric layer so as to define a cathode formation region having the solid electrolyte layer and an anode terminal region that does not include the solid electrolyte layer; a sealing body sealing the plurality of capacitor elements, the sealing body having a first end surface at which an end portion of an anode terminal region is exposed; a first base electrode on the first end surface and including a first element; and a second base electrode covering the first base electrode and including the first element and a second element, wherein the second base electrode is an intermetallic compound of the first element and the second element.
An acoustic wave device includes a piezoelectric layer, first and second comb-shaped electrodes, and a third electrode. The first comb-shaped electrode is on the piezoelectric layer, connected to an input potential, and including a first busbar, and first electrode fingers. The second comb-shaped electrode is on the piezoelectric layer, connected to an output potential, and including a second busbar, and second electrode fingers. The third electrode is connected to a potential different from the first and second comb-shaped electrodes, and includes third electrode fingers, and a connection electrode. The connection electrode interconnects adjacent third electrode fingers. The first electrode finger, the third electrode finger, the second electrode finger, and the third electrode finger are arranged in this order. A ratio d/p is greater than or equal to about 0.05.
An acoustic wave device includes a piezoelectric layer, first and second comb-shaped electrodes respectively including first and second electrode fingers, and a third electrode including third electrode fingers. The first comb-shaped electrode is connected to an input potential. The second comb-shaped electrode is connected to an output potential. The third electrode is connected to a potential different from the first and second comb-shaped electrodes. Each of the third electrode fingers is arranged alongside the first and second electrode fingers. A third busbar interconnects adjacent third electrode fingers. A third electrode finger is between first and second electrode fingers closest to each other. At least one set of electrode fingers selected from the first, second, and third electrode fingers, includes two or more consecutive electrode fingers in the orthogonal-to-electrode-finger direction.
Provided is a battery further superior in safety. A battery that is a cylindrical battery including a cylindrical exterior body that houses a battery element, and safety valves disposed at both end portions of the exterior body, wherein each of the safety valves includes: a first metal member; a support portion that is provided to support the first metal member at a peripheral edge portion of the first metal member and has an opening; and a first insulating member that connects the first metal member and the support portion and contains a thermoplastic resin.
H01M 50/107 - Boîtiers primairesFourreaux ou enveloppes caractérisés par leur forme ou leur structure physique ayant une section transversale courbe, p. ex. ronde ou elliptique
H01M 50/581 - Dispositifs ou dispositions pour l’interruption du courant en réponse à la température
12.
CONTROL UNIT FOR VIBRATOR OF HAPTIC DEVICE AND HAPTIC DEVICE
A control unit controls a vibrator of a haptic device. The control unit includes a CPU as an execution unit and a storage. The storage stores correlation data created by correlating multiple vibration modes and specifying information to each other. The vibration modes are used for presenting a tactile/force sense in accordance with a rehabilitation pattern. The specifying information is used for specifying a rehabilitation pattern. The CPU executes obtaining processing, mode selection processing, and driving processing. In the obtaining processing, based on the correlation data, the CPU selects a vibration mode in accordance with specifying information obtained in the obtaining processing. In the mode selection processing, based on the correlation data, the CPU selects a vibration mode in accordance with specifying information obtained in the obtaining processing. In the driving processing, the CPU drives the vibrator by using the vibration mode selected in the mode selection processing.
A piezoelectric vibration element that includes: a piezoelectric substrate; a first excitation electrode on a first main surface of the piezoelectric substrate; a second excitation electrode on a second main surface of the piezoelectric substrate; and a mass-adding film at least a part of which overlaps with the first excitation electrode, the mass-adding film including a first part and a second part which do not overlap a central portion of the first excitation electrode, the first part extends along a first outer edge portion of the first excitation electrode and the second part extends along a second outer edge portion of the first excitation electrode so as to define a high acoustic velocity region, a first low acoustic velocity region, and a second low acoustic velocity region in a plan view.
H03H 9/19 - Détails de réalisation de résonateurs se composant de matériau piézo-électrique ou électrostrictif ayant un résonateur unique en quartz
H10N 30/20 - Dispositifs piézo-électriques ou électrostrictifs à entrée électrique et sortie mécanique, p. ex. fonctionnant comme actionneurs ou comme vibrateurs
H10N 30/87 - Électrodes ou interconnexions, p. ex. connexions électriques ou bornes
14.
Power Converter with Adaptative Stages and Gate Driver
A switching power converter architecture that is efficient across its entire power range, regardless of load level, by partitioning the power devices into segments for optimal gate drive and providing a local variable-voltage driver for each power device segment. Power device segments may be selectively enabled or disabled based on the level of power to be delivered to a load. In addition, an adaptive gate drive scheme enables dynamic control of the RON and QG values for each power converter device so that the power devices may operate at the lowest RON value at or near maximum power levels for reduced conduction losses, at the lowest RON×QG product value at mid-level loads for peak efficiency, and at the lowest QG value at light loads for reduced switching losses.
H02M 1/088 - Circuits spécialement adaptés à la production d'une tension de commande pour les dispositifs à semi-conducteurs incorporés dans des convertisseurs statiques pour la commande simultanée de dispositifs à semi-conducteurs connectés en série ou en parallèle
H02M 1/00 - Détails d'appareils pour transformation
H02M 3/158 - Transformation d'une puissance d'entrée en courant continu en une puissance de sortie en courant continu sans transformation intermédiaire en courant alternatif par convertisseurs statiques utilisant des tubes à décharge avec électrode de commande ou des dispositifs à semi-conducteurs avec électrode de commande utilisant des dispositifs du type triode ou transistor exigeant l'application continue d'un signal de commande utilisant uniquement des dispositifs à semi-conducteurs avec commande automatique de la tension ou du courant de sortie, p. ex. régulateurs à commutation comprenant plusieurs dispositifs à semi-conducteurs comme dispositifs de commande finale pour une charge unique
A first circuit that inputs/outputs a first frequency band and a second circuit that inputs/outputs a second frequency band are included. A first receiving unit in the first circuit is connected to a first external connection terminal or a second external connection terminal with a band pass filter and a first switch in a high-frequency switch. A first transmitting unit or a second receiving unit in the first circuit is connected with a second switch in the high-frequency switch. The second switch is connected to a diplexer connected to a third external connection terminal. A second transmitting unit in the second circuit is connected to the diplexer or a fourth external connection terminal with a third switch in the high-frequency switch. A third receiving unit or a fourth receiving unit in the second circuit is connected to the fourth external connection terminal with the third switch.
H04B 1/00 - Détails des systèmes de transmission, non couverts par l'un des groupes Détails des systèmes de transmission non caractérisés par le milieu utilisé pour la transmission
H03H 11/34 - Réseaux pour connecter plusieurs sources ou charges, fonctionnant sur des fréquences différentes ou dans des bandes de fréquence différentes, à une charge ou à une source commune
A radio frequency module includes a first semiconductor device that includes a circuit for a signal in a first frequency band, a second semiconductor device that includes a circuit for a signal in a second frequency band, a first external connection terminal that receives a transmit signal in the first frequency band, a second external connection terminal that receives a transmit signal in the second frequency band, a first switch that is electrically connected to the first external connection terminal or the second external connection terminal, a power amplifier that receives a signal outputted from the first switch, a third external connection terminal that receives a selectively-transported output signal from the power amplifier and that is electrically connected to an external first antenna, and a fourth external connection terminal that receives a selectively-transported output signal from the power amplifier and that is electrically connected to an external second antenna.
H04B 1/00 - Détails des systèmes de transmission, non couverts par l'un des groupes Détails des systèmes de transmission non caractérisés par le milieu utilisé pour la transmission
H03F 3/24 - Amplificateurs de puissance, p. ex. amplificateurs de classe B, amplificateur de classe C d'étages transmetteurs de sortie
A module includes: a substrate having a first surface; a first component mounted on the first surface; a first sealing resin layer disposed to cover a side surface of the first component and the first surface; and a redistribution layer covering a surface of the first sealing resin layer on a side far from the substrate. The redistribution layer includes: a first metal film disposed to correspond to a projection area of the first component; a first insulating film covering a surface of the first metal film on a side far from the substrate; and a first group of conductor vias passing through the first insulating film and protruding from the first metal film in a direction away from the substrate.
H01L 23/538 - Dispositions pour conduire le courant électrique à l'intérieur du dispositif pendant son fonctionnement, d'un composant à un autre la structure d'interconnexion entre une pluralité de puces semi-conductrices se trouvant au-dessus ou à l'intérieur de substrats isolants
H01L 23/31 - Encapsulations, p. ex. couches d’encapsulation, revêtements caractérisées par leur disposition
H01L 25/11 - Ensembles consistant en une pluralité de dispositifs à semi-conducteurs ou d'autres dispositifs à l'état solide les dispositifs étant tous d'un type prévu dans une seule des sous-classes , , , , ou , p. ex. ensembles de diodes redresseuses les dispositifs ayant des conteneurs séparés les dispositifs étant d'un type prévu dans la sous-classe
18.
MICROELECTROMECHANICAL COMPONENT WITH A METAL STANDOFF
A microelectromechanical component is provided with a metal standoff and a method of manufacturing the same. The metal standoff provides an accurate control of the MEMS gap height during the eutectic bonding of the component as well as mechanical stress reduction of the electrical contact.
A biological information detection system includes a biosensor and a case that is capable of housing the biosensor. The biosensor includes a first storage unit and a first communication unit. The case includes a second communication unit, a third communication unit, and a case controller. The case controller is capable of performing an information reception process and an output process. The information reception process is a process of receiving biological information and sensor identification information by using the second communication unit. The output process is a process of transmitting, from the third communication unit to an external device, the biological information and the sensor identification information, which are received in the information reception process, in association with each other.
A61B 5/302 - Circuits d’entrée à cet effet pour électrodes capacitives ou ionisées, p. ex. transistors à effet de champ métal-oxyde-semi-conducteur [MOSFET]
This invention provides a multilayer ceramic capacitor with which a sufficient strength can be obtained. A multilayer ceramic capacitor (1) is provided with: a stack (2) including six surfaces from a first surface (11) to a sixth surface (16); a first external electrode (21); and a second external electrode (22). The stack (2) is provided with an inner layer part (53) and two outer layer parts (50) arranged so as to sandwich the inner layer part (53) in the stacking direction (100). The outer layer part (50) is provided with an outer layer dielectric layer (41), and contains fibers (60) in the outer layer dielectric layer (41).
A first diaphragm (110) resonates and vibrates in antiphase with at least one unimorph piezoelectric transducer (130) in a direction orthogonal to the first diaphragm (110). A dimension (L1) in a lengthwise direction on the inner side of at least one frame body (120) is at least four times greater than a dimension in a widthwise direction orthogonal to the lengthwise direction on the inner side of the at least one frame body (120). A second diaphragm (135), when viewed from a direction orthogonal to the first diaphragm (110), is located in a region between the two edges (120s1, 120s2) in the widthwise direction on the inner peripheral surface of the at least one frame body (120) in the widthwise direction, and an average distance (D1) in the widthwise direction between one edge (120s1) in the widthwise direction on the inner peripheral surface of the at least one frame body (120) and one edge (135s1) in the widthwise direction of the second diaphragm (135) as well as an average distance (D2) in the widthwise direction between the other edge (120s2) in the widthwise direction on the inner peripheral surface of the at least one frame body (120) and the other edge (135s2) in the widthwise direction of the second diaphragm (135) are each no more than 1/6 a dimension (L2) in the widthwise direction on the inner side of at the least one frame body (120).
A method for manufacturing a solid electrolytic capacitor 300 includes a solid electrolytic capacitor element 1 having: a valve-action metal base-body 10 having an anode terminal region 31 and a cathode formation region 32; a dielectric layer 20 formed on the valve-action metal base-body 10; a solid electrolyte layer 40 formed on the dielectric layer 20; and a current collector layer 50 formed on the solid electrolyte layer 40. The method includes: a step for forming a masking region 61 composed of a masking member 60 for partitioning the anode terminal region 31 and the cathode formation region 32 and insulating the valve-action metal base-body 10 from the counter electrode on the valve-action metal base-body 10; a step for providing, on the surface of the masking region 61, a water-repellent layer 70 in at least a part of an anode-side masking region 65 located closer to the anode terminal region 31 side than a cathode-side masking region 63 without providing the water-repellent layer 70 in the cathode-side masking region 63, which is a predetermined region including an end part on the cathode formation region side; and a step for forming the solid electrolyte layer 40 by applying a raw material liquid containing a material forming the solid electrolyte layer 40 from the cathode formation region 32 to the cathode-side masking region 63 of the masking region 61.
H01G 9/00 - Condensateurs électrolytiques, redresseurs électrolytiques, détecteurs électrolytiques, dispositifs de commutation électrolytiques, dispositifs électrolytiques photosensibles ou sensibles à la températureProcédés pour leur fabrication
23.
SOFT MAGNETIC METAL POWDER, INDUCTOR, AND METHOD FOR PRODUCING SOFT MAGNETIC METAL POWDER
H01F 1/26 - Aimants ou corps magnétiques, caractérisés par les matériaux magnétiques appropriésEmploi de matériaux spécifiés pour leurs propriétés magnétiques en matériaux inorganiques caractérisés par leur coercivité en matériaux magnétiques doux métaux ou alliages sous forme de particules, p. ex. de poudre comprimées, frittées ou agglomérées les particules étant isolées au moyen de substances organiques macromoléculaires
H01F 1/147 - Alliages caractérisés par leur composition
H01F 17/00 - Inductances fixes du type pour signaux
H01F 17/04 - Inductances fixes du type pour signaux avec noyau magnétique
H01F 27/255 - Noyaux magnétiques fabriqués à partir de particules
24.
METHOD FOR SEPARATING AND RECOVERING RARE EARTH COMPONENT AND METAL COMPONENT FROM MULTILAYER CERAMIC CAPACITOR WASTE AFTER CALCINATION
The present invention provides a method for separating and recovering a rare earth component and a metal component from waste after calcination. This separation and recovery method includes: (A) a step for preparing a waste after calcination of a multilayer ceramic capacitor in which a ceramic layer, an internal electrode layer that contains a first metal component with magnetism, and a baked electrode layer that contains a second metal component without magnetism are sintered; (B) a step for pulverizing the waste after calcination; (C) a step for separating and recovering, using a magnet, a first separated material which contains pulverized ceramic and pulverized first metal, and a second separated material which contains pulverized ceramic, a rare earth-containing material, and pulverized second metal; (D) a step for dissolving the second separated material into a mineral acid that has no oxidizing power, and precipitating the pulverized ceramic and the pulverized second metal, thereby generating a rare earth component-containing solution in which the rare earth component in the rare earth-containing material is dissolved; and (E) a step for dissolving the precipitate in the second separated material into ammonia water, thereby generating a second metal solution in which the second metal component in the pulverized second metal is dissolved.
C22B 3/06 - Extraction de composés métalliques par voie humide à partir de minerais ou de concentrés par lixiviation dans des solutions inorganiques acides
C22B 3/14 - Extraction de composés métalliques par voie humide à partir de minerais ou de concentrés par lixiviation dans des solutions inorganiques alcalines contenant de l'ammoniaque ou des sels d'ammonium
C22B 59/00 - Obtention des métaux des terres rares
25.
METHOD FOR SEPARATING AND RECOVERING RARE EARTH CONSTITUENT AND METAL CONSTITUENT FROM UNSINTERED WASTE BEFORE MANUFACTURING DEGREASING OR FROM UNSINTERED WASTE AFTER MANUFACTURING DEGREASING
Provided is a method for separating and recovering a rare earth constituent and a metal constituent from unsintered waste. This separation and recovery method comprises: (A) a step in which unsintered waste before manufacturing degreasing is prepared, said waste including a magnetic metal powder, a ceramic powder, a rare earth powder, and a resin constituent, and the metal powder and the ceramic powder adhering at least partially to one another; (B) a step in which the unsintered waste before manufacturing degreasing and a solvent are mixed and refined within a resulting slurry; (C) a step in which, after the step (B), a substance that contains the metal powder and a substance that contains the rare earth powder are separated and recovered using a magnet; (D) a step in which, by dissolving the substance containing the rare earth powder in a mineral acid, the ceramic powder is made to precipitate, and a solution containing a rare earth constituent, in which the rare earth powder is dissolved, is produced; and (H) a step in which, by dissolving the substance containing the metal powder in a mineral acid, the ceramic powder is made to precipitate, and a solution containing a metal constituent, in which the metal powder is dissolved, is produced.
C22B 59/00 - Obtention des métaux des terres rares
C22B 1/00 - Traitement préliminaire de minerais ou de débris ou déchets métalliques
C22B 3/06 - Extraction de composés métalliques par voie humide à partir de minerais ou de concentrés par lixiviation dans des solutions inorganiques acides
C22B 7/00 - Mise en œuvre de matériaux autres que des minerais, p. ex. des rognures, pour produire des métaux non ferreux ou leurs composés
METHOD FOR SEPARATING AND RECOVERING RARE EARTH COMPONENT AND METAL COMPONENT FROM UNFIRED WASTE BEFORE PRODUCTION DEGREASING OR UNFIRED WASTE AFTER PRODUCTION DEGREASING
The present invention provides a method for separating and recovering a rare earth component and a metal component from an unfired waste. This method for separating and recovering comprises: (A) a step for preparing an unfired waste before production degreasing, which contains a magnetic metal powder, a ceramic powder, a rare earth powder, and a resin component, and in which the metal powder and the ceramic powder are at least partially adhered to each other; (B) a step for refining the unfired waste before production degreasing by pulverization; (C) a step for separating and recovering a metal powder-containing material and a rare earth powder-containing material by means of a magnet after the step (B); (D) a step for producing a rare earth component-containing solution, in which the rare earth powder is dissolved by dissolving the rare earth powder-containing material into a mineral acid; (H) a step for producing a metal component-containing solution, in which the metal powder is dissolved, by dissolving the metal powder-containing material into a mineral acid; and (E) a step for recycle degreasing the resin component from the unfired waste before production degreasing between the step (A) and the step (D) and between the step (A) and the step (H).
C22B 1/00 - Traitement préliminaire de minerais ou de débris ou déchets métalliques
C22B 3/06 - Extraction de composés métalliques par voie humide à partir de minerais ou de concentrés par lixiviation dans des solutions inorganiques acides
C22B 7/00 - Mise en œuvre de matériaux autres que des minerais, p. ex. des rognures, pour produire des métaux non ferreux ou leurs composés
The present invention provides a method for separating and recovering a rare earth component and a metal component from a post-calcination waste. This separation and recovery method includes: (A) a step for preparing a post-calcination waste of a multilayer ceramic capacitor in which a ceramic layer, an internal electrode layer containing a first metal component that has magnetic properties, and a baked electrode layer containing a second metal component that does not have magnetic properties are sintered; (B) a step for refining the post-calcination waste; (C) a step for separating and recovering, with use of a magnet, a first separated material that contains a refined ceramic and a refined first metal, and a second separated material that contains a refined ceramic, a rare earth-containing material, and a refined second metal; (D) a step for dissolving the second separated material into a mineral acid that has no oxidizing power, and precipitating the refined ceramic and the refined second metal, thereby generating a rare earth component-containing solution in which the rare earth component in the rare earth-containing material is dissolved; and (E) a step for dissolving the precipitate in the second separated material into ammonia water, thereby generating a second metal solution in which the second metal component in the refined second metal is dissolved.
C22B 3/06 - Extraction de composés métalliques par voie humide à partir de minerais ou de concentrés par lixiviation dans des solutions inorganiques acides
C22B 3/14 - Extraction de composés métalliques par voie humide à partir de minerais ou de concentrés par lixiviation dans des solutions inorganiques alcalines contenant de l'ammoniaque ou des sels d'ammonium
Provided is a semiconductor device capable of reducing the effects of noise on a capacitive part. The semiconductor device comprises: a semiconductor substrate that has one main surface and another main surface which is positioned at a distance from the one main surface in the thickness direction and faces the opposite side from the one main surface in the thickness direction, the semiconductor substrate having at least one trench provided in the one main surface, and a hole provided so as to extend in the thickness direction, be open in at least one of the main surface and the other surface, and have a larger surface area than one trench when viewed in the thickness direction; a capacitive part that is provided in at least the interior of a trench and has a dielectric layer and two electrode layers that sandwich the dielectric layer; and a filling part that is provided on the interior of the hole and contains a conductive material.
H01L 27/04 - Dispositifs consistant en une pluralité de composants semi-conducteurs ou d'autres composants à l'état solide formés dans ou sur un substrat commun comprenant des éléments de circuit passif intégrés avec au moins une barrière de potentiel ou une barrière de surface le substrat étant un corps semi-conducteur
H01G 4/33 - Condensateurs à film mince ou à film épais
H01L 21/822 - Fabrication ou traitement de dispositifs consistant en une pluralité de composants à l'état solide ou de circuits intégrés formés dans ou sur un substrat commun avec une division ultérieure du substrat en plusieurs dispositifs individuels pour produire des dispositifs, p.ex. des circuits intégrés, consistant chacun en une pluralité de composants le substrat étant un semi-conducteur, en utilisant une technologie au silicium
H01L 23/12 - Supports, p. ex. substrats isolants non amovibles
H01L 25/065 - Ensembles consistant en une pluralité de dispositifs à semi-conducteurs ou d'autres dispositifs à l'état solide les dispositifs étant tous d'un type prévu dans une seule des sous-classes , , , , ou , p. ex. ensembles de diodes redresseuses les dispositifs n'ayant pas de conteneurs séparés les dispositifs étant d'un type prévu dans le groupe
H01L 25/07 - Ensembles consistant en une pluralité de dispositifs à semi-conducteurs ou d'autres dispositifs à l'état solide les dispositifs étant tous d'un type prévu dans une seule des sous-classes , , , , ou , p. ex. ensembles de diodes redresseuses les dispositifs n'ayant pas de conteneurs séparés les dispositifs étant d'un type prévu dans la sous-classe
H01L 25/18 - Ensembles consistant en une pluralité de dispositifs à semi-conducteurs ou d'autres dispositifs à l'état solide les dispositifs étant de types prévus dans plusieurs différents groupes principaux de la même sous-classe , , , , ou
Provided is a semiconductor device capable of increasing the electrostatic capacitance of a capacitance part while suppressing an increase in mounting area. The semiconductor device comprises: a semiconductor substrate having a lower surface, an upper surface disposed at a distance from the lower surface in the height direction, and a lateral surface connecting the upper surface and the lower surface; and a capacitance part disposed on the lateral surface side of the semiconductor substrate. The lower surface is the surface facing a mounting surface on which the semiconductor device is mounted. The capacitance part has a laminate structure that at least includes: a first dielectric layer disposed along the lateral surface; and a first conductive layer and a second conductive layer that face each other across the first dielectric layer. The semiconductor substrate has at least one trench part that has an opening in the lateral surface. At least a portion of the capacitance part is positioned in said at least one trench part.
The present invention provides a semiconductor device in which the electrostatic capacitance of a capacitive part can be increased. The semiconductor device comprises: a semiconductor substrate having one main surface and another main surface which is spaced apart from the one main surface at an interval in a thickness direction and which faces away from the one main surface in the thickness direction, the semiconductor substrate having at least one first trench part in the one main surface and at least one second trench part in the other main surface; a first capacitive part provided at least inside the first trench part and having a dielectric layer and two electrode layers sandwiching the dielectric layer; and a second capacitive part provided at least inside the second trench part and having a dielectric layer and two electrode layers sandwiching the dielectric layer.
H01L 27/04 - Dispositifs consistant en une pluralité de composants semi-conducteurs ou d'autres composants à l'état solide formés dans ou sur un substrat commun comprenant des éléments de circuit passif intégrés avec au moins une barrière de potentiel ou une barrière de surface le substrat étant un corps semi-conducteur
H01L 21/822 - Fabrication ou traitement de dispositifs consistant en une pluralité de composants à l'état solide ou de circuits intégrés formés dans ou sur un substrat commun avec une division ultérieure du substrat en plusieurs dispositifs individuels pour produire des dispositifs, p.ex. des circuits intégrés, consistant chacun en une pluralité de composants le substrat étant un semi-conducteur, en utilisant une technologie au silicium
31.
SECONDARY BATTERY DIAGNOSIS SYSTEM AND SECONDARY BATTERY DIAGNOSIS METHOD
A secondary battery diagnosis system according to an embodiment of the present technology selects, on the basis of normal OCV data pertaining to a first secondary battery in a normal state, specific OCV data with which the regular OCV data can be approximated from among a plurality of virtual OCV data obtained from a plurality of positive electrode OCP data and a plurality of negative electrode OCP data. The secondary battery diagnosis system furthermore estimates, on the basis of the positive electrode OCP data and the negative electrode OCP data from which the specific OCV data is obtained, a plurality of deterioration OCP data for when the first secondary battery deteriorates under various conditions, and determines, on the basis of the plurality of deterioration OCP data obtained through the estimation, an OCV measurement section for measuring the OCV of a second secondary battery.
G01R 31/392 - Détermination du vieillissement ou de la dégradation de la batterie, p. ex. état de santé
G01R 31/367 - Logiciels à cet effet, p. ex. pour le test des batteries en utilisant une modélisation ou des tables de correspondance
H01M 10/48 - Accumulateurs combinés à des dispositions pour mesurer, tester ou indiquer l'état des éléments, p. ex. le niveau ou la densité de l'électrolyte
32.
CHARGING CURRENT VALUE ESTIMATION SYSTEM AND CHARGING CURRENT VALUE ESTIMATION METHOD
A charging current value estimation system according to one aspect of the present technology is a system capable of estimating the charging current value of each secondary battery cell when n (where n is a natural number of 2 or higher) secondary battery cells are connected together in parallel. This system is capable of calculating the charging current value of each secondary battery cell on the basis of open-circuit voltage data for the integrated charge amount of each secondary battery cell and cell resistance data for the integrated charge amount of each secondary battery cell.
G01R 31/396 - Acquisition ou traitement de données pour le test ou la surveillance d’éléments particuliers ou de groupes particuliers d’éléments dans une batterie
G01R 31/367 - Logiciels à cet effet, p. ex. pour le test des batteries en utilisant une modélisation ou des tables de correspondance
G01R 31/3828 - Dispositions pour la surveillance de variables des batteries ou des accumulateurs, p. ex. état de charge utilisant l’intégration du courant
G01R 31/385 - Dispositions pour mesurer des variables des batteries ou des accumulateurs
H01M 10/48 - Accumulateurs combinés à des dispositions pour mesurer, tester ou indiquer l'état des éléments, p. ex. le niveau ou la densité de l'électrolyte
42 - Services scientifiques, technologiques et industriels, recherche et conception
Produits et services
Industrial analysis, industrial research and industrial
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programming; computer software consultancy;
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data, other than physical conversion; data encryption
services; providing search engines for the internet; design,
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design, creation, development and maintenance of computer
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the internet of things platforms for use in patient
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and electronic products, and for use in design and
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in design and development of game software applications, for
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products, and for use in design and development of software
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service (SaaS) and platform as a service (PaaS) featuring
mixed reality software for use in design and development of
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in design and development of software applications using
haptics technologies; providing temporary use of online
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and development of game software applications, for use in
design and development of electric and electronic products,
and for use in design and development of software
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service (SaaS) and platform as a service (PaaS) featuring
virtual reality software for use in design and development
of game software applications, for use in design and
development of electric and electronic products, and for use
in design and development of software applications using
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of digital contents; software as a service (SaaS) and
platform as a service (PaaS) featuring software for use in
design and development of digital contents; providing
temporary use of online non-downloadable software for use in
editing sounds, audio, video, photographs, still and moving
images; software as a service (SaaS) and platform as a
service (PaaS) featuring software for use in editing sounds,
audio, video, photographs, still and moving images;
providing temporary use of online non-downloadable computer
software platforms for use in design and development of game
programs; providing temporary use of online non-downloadable
software, namely, platform middleware for use in design and
development of game software applications; platform as a
service (PaaS) featuring middleware platforms for use in
design and development of game software applications;
providing temporary use of online non-downloadable computer
software for enhancing feel, vibration and feedback provided
from portable electronic machines and apparatus; providing
temporary use of online non-downloadable computer software
for recording, transmitting, reproducing, receiving,
downloading, saving and editing sounds, images and haptic
data; providing temporary use of online non-downloadable
computer software used to give a user a feeling of a
response, force, pressure, touch in 3D games, video games,
virtual reality; rental of computer software for use in
design and development of game software applications, for
use in design and development of electric and electronic
products, and for use in design and development of software
applications using haptics technologies; rental of augmented
reality computer software for use in design and development
of game software applications, for use in design and
development of electric and electronic products, and for use
in design and development of software applications using
haptics technologies; rental of mixed reality computer
software for use in design and development of game software
applications, for use in design and development of electric
and electronic products, and for use in design and
development of software applications using haptics
technologies; rental of virtual reality computer software
for use in design and development of game software
applications, for use in design and development of electric
and electronic products, and for use in design and
development of software applications using haptics
technologies; providing temporary use of online
non-downloadable software development kits (SDKs); providing
online information on computer technology and programming;
technological audio analysis; technological analysis of
analog signals; technological analysis of digital signals;
analysis of technical data; providing temporary use of
online non-downloadable software for use in data detection,
collection, analysis and management relating to
communications in the field of human resources; providing
temporary use of online non-downloadable software for use in
tracking, detecting and positioning of people and objects;
providing temporary use of online non-downloadable software
for use in managing, monitoring and analyzing of production
and manufacturing equipment and systems; providing temporary
use of online non-downloadable software for use in managing,
monitoring and analyzing of working status, environment,
safety and health conditions of employees and workers in the
construction and manufacturing industries; providing
temporary use of online non-downloadable computer software
platforms or applications for use in analysis of EEG
(electroencephalogram) signals; providing temporary use of
online non-downloadable software for use in two or three
dimensional simulation for use in design and development of
industrial products; providing temporary use of online
non-downloadable software for use in the design and
development of industrial products; providing temporary use
of online non-downloadable software for use in analysis
using finite element method; providing temporary use of
online non-downloadable software for use in analysis of
electromagnetic waves; providing temporary use of online
non-downloadable software for use in analysis of magnetic
fields; providing temporary use of online non-downloadable
software for use in analysis of electric fields; providing
temporary use of online non-downloadable software for use in
stress analysis of structures; providing temporary use of
online non-downloadable software for use in analysis of heat
conductions; providing temporary use of online
non-downloadable software for use in analysis of fluid;
providing temporary use of online non-downloadable software
for use in piezoelectric analysis; providing temporary use
of online non-downloadable software for use in analysis of
sonic waves; providing temporary use of online
non-downloadable software for controlling engines or brakes
for vehicles; providing temporary use of online
non-downloadable software for use in operating self-driving
vehicles; information, advisory and consultancy services
relating to the aforesaid services.
34.
SUBSTRATE DESIGN ASSISTING DEVICE, SUBSTRATE DESIGN ASSISTING SYSTEM, AND DATA STRUCTURE RELATED TO CIRCUIT INFORMATION
A substrate design assisting device that assists in arranging, on a wiring substrate, a bypass capacitor connected to a power supply line and a ground line via at least one pair of a power-side through conductor and a ground-side through conductor. The device includes a storage unit that stores circuit information representing a unit that includes a pair of a power-side through conductor and a ground-side through conductor and a capacitor element connected between the power-side through conductor and the ground-side through conductor, for each of a plurality of predetermined pitches; an input reception unit that acquires a pitch set by a user and that corresponds to one of the plurality of predetermined pitches; and a calculation unit that acquires, from the storage unit, circuit information corresponding to the pitch acquired by the input reception unit, and calculates the impedance of the supply line based on the acquired circuit information.
An acoustic wave device includes acoustic elements sharing a support, and a piezoelectric film on the support and including a piezoelectric layer that includes a piezoelectric body. The acoustic elements include a first acoustic element that is an acoustic coupling filter, and a second acoustic element electrically connected to the first acoustic element. In plan view, an acoustic reflection portion is provided in the support overlapping with first electrode fingers, second electrode fingers, and third electrode fingers of the first acoustic element and a functional electrode of the second acoustic element.
A secondary battery having higher performance is provided. The secondary battery includes an electrode wound body, a first electrode current collector plate, a second electrode current collector plate, an electrolytic solution, and a battery can. The electrode wound body includes a first end face and a second end face. The first electrode current collector plate is disposed to face the first end face. The second electrode current collector plate is disposed to face the second end face. The first electrode includes a first electrode covered region in which a first electrode current collector is covered with a first electrode active material layer, and a first electrode exposed region in which the first electrode current collector is exposed without being covered with the first electrode active material layer and is joined to the first electrode current collector plate. The first electrode exposed region is adjacent to the first electrode covered region in a first direction. The first electrode current collector in the first electrode exposed region has bending points that are greater in number in a central axis side part of the electrode wound body than in an outer winding side part of the electrode wound body.
H01M 4/70 - Supports ou collecteurs caractérisés par la forme ou la configuration
H01M 4/02 - Électrodes composées d'un ou comprenant un matériau actif
H01M 50/107 - Boîtiers primairesFourreaux ou enveloppes caractérisés par leur forme ou leur structure physique ayant une section transversale courbe, p. ex. ronde ou elliptique
A radio frequency module includes amplifiers that form an amplifier circuit of differential amplification type, a switch that has a common terminal and selection terminals, a switch that has a common terminal and selection terminals, a filter that has balanced terminals and an unbalanced terminal and that has a passband including a first band, and a filter that has balanced terminals and an unbalanced terminal and that has a passband including a second band.
H04B 1/38 - Émetteurs-récepteurs, c.-à-d. dispositifs dans lesquels l'émetteur et le récepteur forment un ensemble structural et dans lesquels au moins une partie est utilisée pour des fonctions d'émission et de réception
H03F 3/24 - Amplificateurs de puissance, p. ex. amplificateurs de classe B, amplificateur de classe C d'étages transmetteurs de sortie
A multilayer ceramic capacitor includes a stacked body and external electrodes. The stacked body includes stacked dielectric layers and internal electrodes. The external electrodes are disposed on lateral surfaces of the stacked body and are connected to the internal electrodes. A ratio of min to max is not less than about 36% and not more than about 90%, where A1, A2, A3, and A4 respectively denote the surface areas of first, second, third, and fourth external electrodes that are located on the first or second main surface of the stacked body.
An acoustic wave device includes a piezoelectric film including a piezoelectric layer including a piezoelectric body, one of first and second comb electrodes connected to an input potential and the other of the first and second comb electrodes connected to an output potential. An order in which a first electrode finger, a second electrode finger, and a third electrode finger are arranged side by side is an order in which the first electrode finger, the third electrode finger, the second electrode finger, and the third electrode finger are set as one period when the order is started from the first electrode finger. At least one of a portion of the first comb electrode and a portion of the third electrode, and a portion of the second comb electrode and a portion of the third electrode intersects each other on the piezoelectric layer with the insulator layer interposed therebetween.
An antenna module includes a dielectric substrate; a first ground electrode and a second ground electrode that are arranged at the dielectric substrate; a plurality of first antenna elements that are arranged in a first direction at the dielectric substrate; and a second antenna element that is arranged at the dielectric substrate. The plurality of first antenna elements face the first ground electrode in a second direction that is different from the first direction. The second antenna element faces the second ground electrode in the second direction. The second antenna element is arranged between first antenna elements that are adjacent to each other, among the plurality of first antenna elements, when seen from a third direction that is orthogonal to the first direction and the second direction.
A Doherty amplifier circuit includes a carrier amplifier that amplifies a radio frequency signal; a peak amplifier that amplifies the radio frequency signal; and a control circuit including a first variable bandpass characteristic circuit configured such that a bandpass characteristic for passing the radio frequency signal is variable according to a supply voltage and a detector that detects the radio frequency signal passing through the first variable bandpass characteristic circuit. The control circuit controls the bias of the peak amplifier according to a detection result of the detector.
H03F 1/02 - Modifications des amplificateurs pour augmenter leur rendement, p. ex. étages classe A à pente glissante, utilisation d'une oscillation auxiliaire
H03F 3/21 - Amplificateurs de puissance, p. ex. amplificateurs de classe B, amplificateur de classe C comportant uniquement des dispositifs à semi-conducteurs
H03F 3/213 - Amplificateurs de puissance, p. ex. amplificateurs de classe B, amplificateur de classe C comportant uniquement des dispositifs à semi-conducteurs dans des circuits intégrés
An acoustic wave device includes a piezoelectric film including a piezoelectric layer made of lithium niobate, a first interdigitated electrode including a first busbar and first electrode fingers, a second interdigitated electrode including a second busbar and second electrode fingers and interdigitated with the first electrode fingers, and a third electrode including third electrode fingers side by side with the first and second electrode fingers, connected to a potential different from potentials of the first and second interdigitated electrodes and a connection electrode connecting adjacent third electrode fingers to each other. The connection electrode connects ends of adjacent third electrode fingers closer to at least the first busbar. The connection electrode is between at least the first busbar and ends of the second electrode fingers. Mass-addition films are provided in at least a portion of at least one of first, second, and third gap regions.
Provided are a soft magnetic metal powder that has superior withstand voltage characteristics and further reduces structural defects in an insulation coating caused by stress generated in a manufacturing process, an inductor, and a method for manufacturing the soft magnetic metal powder. A soft magnetic metal powder 20 according to the present disclosure comprises soft magnetic metal particles 21 provided with the soft magnetic metal particles 21 and an insulation coating 22 that covers the soft magnetic metal particles 21, wherein: the insulation coating 22 contains a silanol group; and when the soft magnetic metal powder 20 is subjected to 29232342344 is the signal area of peaks appearing at not less than –103 ppm but less than –115 ppm.
H01F 1/26 - Aimants ou corps magnétiques, caractérisés par les matériaux magnétiques appropriésEmploi de matériaux spécifiés pour leurs propriétés magnétiques en matériaux inorganiques caractérisés par leur coercivité en matériaux magnétiques doux métaux ou alliages sous forme de particules, p. ex. de poudre comprimées, frittées ou agglomérées les particules étant isolées au moyen de substances organiques macromoléculaires
H01F 1/147 - Alliages caractérisés par leur composition
H01F 17/00 - Inductances fixes du type pour signaux
H01F 17/04 - Inductances fixes du type pour signaux avec noyau magnétique
H01F 27/255 - Noyaux magnétiques fabriqués à partir de particules
This antenna module comprises an antenna substrate provided with at least one radiation electrode, and a high-frequency circuit module mounted on the antenna substrate. The high-frequency circuit module has a rectangular shape having two long sides and two short sides in a plan view, and has a first side surface and a second side surface corresponding to the two long sides, and a third side surface and a fourth side surface corresponding to the two short sides. The antenna substrate has a first substrate side surface, a second substrate side surface, a third substrate side surface, and a fourth substrate side surface. In the plan view, the first substrate side surface of the antenna substrate is positioned in the same plane as the first side surface of the high-frequency circuit module, or is positioned inward of the first side surface while overlapping the high-frequency circuit module. At least one of the second substrate side surface, the third substrate side surface, and the fourth substrate side surface of the antenna substrate is positioned in a region that does not overlap the high-frequency circuit module in the plan view.
H01Q 23/00 - Antennes comportant des circuits ou des éléments de circuit actifs qui leur sont intégrés ou liés
H01P 11/00 - Appareils ou procédés spécialement adaptés à la fabrication de guides d'ondes, résonateurs, lignes ou autres dispositifs du type guide d'ondes
H01Q 13/08 - Terminaisons rayonnantes de lignes de transmission micro-ondes à deux conducteurs, p. ex. lignes coaxiales ou lignes micro-rayées
H01Q 21/08 - Réseaux d'unités d'antennes, de même polarisation, excitées individuellement et espacées entre elles les unités étant espacées le long du trajet rectiligne ou adjacent à celui-ci
45.
ELASTIC WAVE DEVICE, AND MANUFACTURING METHOD FOR ELASTIC WAVE DEVICE
Provided is an elastic wave device capable of suppressing a leakage wave transmitted to a protrusion part, and a method for manufacturing the elastic wave device. The elastic wave device comprises: a piezoelectric layer having a first main surface and a second main surface on the opposite side from the first main surface; an upper electrode provided on the first main surface of the piezoelectric layer; a lower electrode provided on the second main surface of the piezoelectric layer; and a support member facing the second main surface of the piezoelectric layer. The support member or the piezoelectric layer has a cavity part in a region overlapping at least a part of the upper electrode and the lower electrode. The support member has at least one protrusion part protruding from the bottom of the cavity part toward the piezoelectric layer.
H03H 9/02 - Réseaux comprenant des éléments électromécaniques ou électro-acoustiquesRésonateurs électromécaniques Détails
H03H 3/02 - Appareils ou procédés spécialement adaptés à la fabrication de réseaux d'impédance, de circuits résonnants, de résonateurs pour la fabrication de résonateurs ou de réseaux électromécaniques pour la fabrication de résonateurs ou de réseaux piézo-électriques ou électrostrictifs
H03H 9/17 - Détails de réalisation de résonateurs se composant de matériau piézo-électrique ou électrostrictif ayant un résonateur unique
46.
METHOD FOR SEPARATING AND RECOVERING RARE EARTH COMPONENT AND METAL COMPONENT FROM UNFIRED WASTE BEFORE OR AFTER MANUFACTURING DEGREASING
Provided is a method for separating and recovering a rare earth component and a metal component from unfired waste. The method for separating and recovering includes the steps of: (A) preparing unfired waste before manufacturing degreasing which contains magnetic metal powder, ceramic powder, rare earth powder, and a resin component, and in which the metal powder and the ceramic powder are at least partially adhered to each other; (B) refining the unfired waste before manufacturing degreasing by pulverization; (C) after step (B), using a magnet to separate and recover a metal powder-containing material and a rare earth powder-containing material; (D) dissolving the rare earth powder-containing material in a mineral acid to produce a rare earth component-containing solution in which the rare earth powder is dissolved; (H) dissolving the metal powder-containing material in a mineral acid to produce a metal component-containing solution in which the metal powder is dissolved; and (E) between step (A) and steps (D) and (H), recycling and degreasing a resin component from the unfired waste before manufacturing degreasing.
C22B 3/06 - Extraction de composés métalliques par voie humide à partir de minerais ou de concentrés par lixiviation dans des solutions inorganiques acides
C22B 7/00 - Mise en œuvre de matériaux autres que des minerais, p. ex. des rognures, pour produire des métaux non ferreux ou leurs composés
47.
METHOD FOR SEPARATING AND RECOVERING RARE EARTH COMPONENT AND METAL COMPONENT FROM UNBURNED WASTE BEFORE PRODUCTION DEGREASING OR UNBURNED WASTE AFTER PRODUCTION DEGREASING
To provide a method for separating and recovering a rare earth component and a metal component from unroasted scrap. This separation and recovery method comprises: (A) a step for preparing an unroasted scrap before production degreasing, the scrap including a metal powder having magnetism, a ceramic powder, a rare earth powder, and a resin component, and in which the metal powder and the ceramic powder are at least partially adhered to each other; (B) a step for refining the unroasted scrap before production degreasing, in a slurry generated by mixing the unroasted scrap and a solvent; (C) a step for separating and recovering a metal powder-containing material and a rare earth powder-containing material using a magnet after the step (B); (D) a step for dissolving the rare earth powder-containing material in a mineral acid to precipitate a ceramic powder and generating rare earth component-containing solution in which the rare earth powder is dissolved; and (H) a step for dissolving the metal powder-containing material in a mineral acid to precipitate a ceramic powder and generating a metal component-containing solution in which the metal powder is dissolved.
C22B 59/00 - Obtention des métaux des terres rares
C22B 1/00 - Traitement préliminaire de minerais ou de débris ou déchets métalliques
C22B 3/06 - Extraction de composés métalliques par voie humide à partir de minerais ou de concentrés par lixiviation dans des solutions inorganiques acides
An electronic component (10) comprises an element body (20) and a glass film (51) that covers an outer surface (21) of the element body (20). The outer surface (21) of the element body (20) has a recess section (24) that is depressed with respect to the surroundings thereof. The material of the glass film (51) contains an organic silane compound. The glass film (51) also has a plurality of voids (53) therein. In a cross-sectional view at a cross section orthogonal to the outer surface (21) of the element body (20), the ratio of the total area of the plurality of voids (53) to the cross-sectional area of the glass film (51) is 0.3-30% at a section of the glass film (51) that covers the recess section (24).
H01C 7/04 - Résistances fixes constituées par une ou plusieurs couches ou revêtementsRésistances fixes constituées de matériaux conducteurs en poudre ou de matériaux semi-conducteurs en poudre avec ou sans matériaux isolants à coefficient de température négatif
H01C 1/02 - BoîtiersEnveloppesEnrobageRemplissage de boîtier ou d'enveloppe
In the present invention, a power-receiving device (10) is provided with a power-receiving resonant circuit (11), and also provided with a power-receiving rectifier circuit (12), a smoothing capacitor (13), and a control circuit (16). The power-receiving rectifier circuit (12) is electrically connected to the power-receiving resonant circuit (11), and rectifies alternating-current power received at a power-receiving coil (111) constituting the power-receiving resonant circuit (11). The smoothing capacitor (13) is electrically connected to the power-receiving rectifier circuit (12), and smooths, to a power-receiving direct-current voltage, the power rectified by the power-receiving rectifier circuit (12). The control circuit (16) is electrically connected to the power-receiving resonant circuit (11), and causes a state of electromagnetic resonance coupling to be changed by the rectification operation of the power-receiving rectifier circuit (12). The control circuit (16) controls execution and stopping of the rectification operation of the power-receiving rectifier circuit (12) so that a power-receiving voltage will reach a predetermined value on the basis of a control value that was set with respect to the power-receiving direct-current voltage. The control circuit (16) controls execution and stopping of the rectification operation of the power-receiving rectifier circuit (12) and causes the state of electromagnetic resonance coupling to be changed by adjusting the control value, and emits information from the power-receiving device (10) and executes information transmission to a power-transmitting device (91).
H02J 50/80 - Circuits ou systèmes pour l'alimentation ou la distribution sans fil d'énergie électrique mettant en œuvre l’échange de données, concernant l’alimentation ou la distribution d’énergie électrique, entre les dispositifs de transmission et les dispositifs de réception
H02J 50/10 - Circuits ou systèmes pour l'alimentation ou la distribution sans fil d'énergie électrique utilisant un couplage inductif
50.
SECONDARY BATTERY EVALUATION SYSTEM AND SECONDARY BATTERY EVALUATION METHOD
A secondary battery evaluation system according to one aspect of the present invention determines whether or not a secondary battery to be inspected is normal on the basis of a comparison of a plurality of first measurement values, obtained from a plurality of normal secondary batteries including at least normal secondary batteries having different SoCs from each other, and a second measurement value, obtained from the secondary battery to be inspected, or a comparison of a plurality of first calculated values, obtained on the basis of the plurality of first measurement values, and a second calculated value, obtained on the basis of the second measurement value.
G01R 31/392 - Détermination du vieillissement ou de la dégradation de la batterie, p. ex. état de santé
G01R 31/367 - Logiciels à cet effet, p. ex. pour le test des batteries en utilisant une modélisation ou des tables de correspondance
G01R 31/389 - Mesure de l’impédance interne, de la conductance interne ou des variables similaires
H01M 10/48 - Accumulateurs combinés à des dispositions pour mesurer, tester ou indiquer l'état des éléments, p. ex. le niveau ou la densité de l'électrolyte
51.
ANTENNA SUBSTRATE, ANTENNA MODULE PROVIDED WITH SAME, AND COMMUNICATION DEVICE
An antenna substrate (20) is provided with: a flat plate-shaped radiation element (121) disposed parallel to a main surface (30a) of a flat plate-shaped dielectric body (30); and an external connection terminal (21) disposed so as to be partially exposed to a side surface (30b) of the dielectric body (30). When the normal direction of the radiation element (121) is defined as a Z-axis direction, and the two directions orthogonal to the Z-axis direction and orthogonal to each other are defined as an X-axis direction and a Y-axis direction, the external connection terminal (21) has an electrode portion (21a) that does not overlap the radiation element (121) when viewed from the Z-axis direction and that overlaps the radiation element (121) when viewed from the X-axis direction and when viewed from the Y-axis direction.
The present invention is provided with a field effect transistor on an insulating surface and an interlayer insulating film covering the field effect transistor. The field effect transistor includes a source region of a first conductivity type, a body region of a second conductivity type, a drift region of the first conductivity type, a drain region of the first conductivity type, and a gate electrode. A field plate connected to the source region is disposed on the interlayer insulating film. The source region and the drift region are disposed at positions sandwiching the body region in a second direction, and the drain region is disposed at a position farther than the drift region when viewed from the body region. The field effect transistor further includes a body contact region of the second conductivity type protruding to the source region side from a body contact connection section, which is a part of the edge of the body region on the source region side. In a plan view, the field plate extends from the source region to at least the drift region, and does not overlap a half line extending in the second direction from the midpoint of the body contact connection section toward the drain region.
H01L 29/06 - Corps semi-conducteurs caractérisés par les formes, les dimensions relatives, ou les dispositions des régions semi-conductrices
H01L 21/336 - Transistors à effet de champ à grille isolée
H01L 29/41 - Electrodes caractérisées par leur forme, leurs dimensions relatives ou leur disposition relative
H01L 29/49 - Electrodes du type métal-isolant-semi-conducteur
H01L 29/78 - Transistors à effet de champ l'effet de champ étant produit par une porte isolée
H01L 29/423 - Electrodes caractérisées par leur forme, leurs dimensions relatives ou leur disposition relative ne transportant pas le courant à redresser, à amplifier ou à commuter
In the present invention, a coating layer (160) containing Si is formed on an element body part. The minimum thickness (TS) of the coating layer (160) positioned on the ends of a plurality of internal electrode layers (150) in the width direction (W) is greater than the minimum thickness of the coating layer (160) positioned between a plurality of dielectric layers (140) and the external electrodes.
In the present invention, in an element body part (110), side margin parts (S1, S2) positioned between a first side surface (113) and a plurality of internal electrode layers (150) and between the second side surface (114) and the plurality of internal electrode layers (150) in the width direction (W) are composed of a coating layer (160) containing Si and K.
An electronic device (1) comprises: a substrate (10) having main surfaces (10a and 10b) facing each other; an electronic device disposed on the substrate (10); a planar electrode (20) electrically connected to the electronic device and disposed on the main surface (10a); an adhesion layer (31) made of a first metal material of which the planar electrode (20) is also made and having an amorphous structure; and a metal layer (32) made of a second metal material different from the first metal material and having an amorphous structure. The planar electrode (20), the adhesion layer (31), and the metal layer (32) are disposed in this order from the main surface (10a).
H01L 23/12 - Supports, p. ex. substrats isolants non amovibles
H03H 3/02 - Appareils ou procédés spécialement adaptés à la fabrication de réseaux d'impédance, de circuits résonnants, de résonateurs pour la fabrication de résonateurs ou de réseaux électromécaniques pour la fabrication de résonateurs ou de réseaux piézo-électriques ou électrostrictifs
H03H 9/02 - Réseaux comprenant des éléments électromécaniques ou électro-acoustiquesRésonateurs électromécaniques Détails
Provided is a secondary battery excellent in reliability. This secondary battery comprises an electrode winding body, a first electrode current collector plate, and a second electrode current collector plate. In the electrode winding body, a laminate including a first electrode, a second electrode, and a separator is wound along a longitudinal direction of the laminate, wherein there is a through hole penetrating therethrough in a width direction orthogonal to the longitudinal direction. The first electrode current collector plate and the second electrode current collector plate face each other across the electrode winding body in the width direction. The first electrode current collector plate has an opening at a position overlapping with the through hole in the width direction. The diameter of the opening is smaller than the diameter of the through hole.
H01M 10/0587 - Structure ou fabrication d'accumulateurs ayant uniquement des éléments de structure enroulés, c.-à-d. des électrodes positives enroulées, des électrodes négatives enroulées et des séparateurs enroulés
H01M 50/536 - Connexions d’électrodes dans un boîtier de batterie caractérisées par le procédé de fixation des conducteurs aux électrodes, p. ex. soudage
57.
PLATED MEDIUM, METHOD FOR PRODUCING PLATED MEDIUM, AND METHOD FOR REUSING PLATED MEDIUM
One embodiment of the present invention provides a plating medium comprising: a core; and a shell provided on the surface of the core. The shell constitutes a multilayer body of two or more metal-containing layers.
The present invention maintains the characteristics of a power amplification circuit without affecting the cost. This power amplification circuit has a plurality of stages of amplification units. The power amplification circuit includes a first amplification unit that amplifies an input high-frequency signal, a second amplification unit that amplifies the output of the first amplification unit, and a switch unit provided in the power supply path to the first amplification unit. Through the switch unit, power is supplied to the first amplification unit. The switch unit sets the power supply to the first amplification unit to on or off. The power is directly supplied to the second amplification unit without passing through the switch unit.
H03F 1/52 - Circuits pour la protection de ces amplificateurs
H03F 1/02 - Modifications des amplificateurs pour augmenter leur rendement, p. ex. étages classe A à pente glissante, utilisation d'une oscillation auxiliaire
H03F 3/24 - Amplificateurs de puissance, p. ex. amplificateurs de classe B, amplificateur de classe C d'étages transmetteurs de sortie
H03F 3/68 - Combinaisons d'amplificateurs, p. ex. amplificateurs à plusieurs voies pour stéréophonie
In the present invention, each of a plurality of internal electrode layers has, on the side opposite to the side connected to an external electrode (120) in the length direction (L), a narrow portion (151N) in which the width in the width direction (W) is narrower than that in the center portion in the length direction (L). A coating layer (160) containing Si and K is formed on the end of each of the plurality of internal electrode layers in the width direction (W) of the central part in the length direction (L).
Provided are an antenna substrate, an antenna module, and a communication device that make it possible to suppress deterioration in antenna efficiency while making it possible to improve radio wave radiation to the sides of a dielectric substrate. This antenna substrate comprises: a ground electrode on a dielectric substrate; and first and second antennas respectively including flat plate-shaped first and second radiation electrodes located at positions different from that of the ground electrode in the normal direction of the dielectric substrate, and first and second parasitic elements connected to the ground electrode. A first direction for determining the sizes of the first and second radiation electrodes is orthogonal to the normal direction, and the first and second radiation electrodes are located at different positions in the first direction. The first and second parasitic elements extend in the first direction, are respectively located at the same positions as those of the first and second radiation electrodes in the first direction, and are located at different positions in a second direction orthogonal to the normal direction and intersecting the first direction. The first and second radiation electrodes are located between the first and second parasitic elements in the second direction.
H01Q 13/08 - Terminaisons rayonnantes de lignes de transmission micro-ondes à deux conducteurs, p. ex. lignes coaxiales ou lignes micro-rayées
H01Q 19/02 - Combinaisons d'éléments actifs primaires d'antennes avec des dispositifs secondaires, p. ex. avec des dispositifs quasi optiques, pour donner à une antenne une caractéristique directionnelle désirée Détails
H01Q 21/06 - Réseaux d'unités d'antennes, de même polarisation, excitées individuellement et espacées entre elles
H01Q 21/30 - Combinaisons d'unités d'antennes séparées, fonctionnant sur des bandes d'ondes différentes et connectées à un système d'alimentation commun
H01Q 23/00 - Antennes comportant des circuits ou des éléments de circuit actifs qui leur sont intégrés ou liés
An element body part according to the present invention includes: a first outer layer part (X1) that is further to a first principal surface side than an internal electrode layer of a plurality of internal electrode layers that is furthest to the first principal surface side in the layering direction; and a second outer layer part that is further to a second principal surface side than an internal electrode layer of the plurality of internal electrode layers that is furthest to the second principal surface side in the layering direction. Both the first outer layer part (X1) and the second outer layer part include an outermost layer part (Xa) that is furthest to the outside and an inside outer layer part (Xb) that is inside the outermost layer part (Xa). The maximum height (Ha) of the unevenness of the outer surface of the outermost layer part (Xa) is smaller than the maximum height (Hb) of the unevenness of the outer surface of the inside outer layer part (Xb).
In the present invention, an external electrode is provided on each of a first end surface and a second end surface (116), and is electrically connected to a plurality of internal electrode layers (150). Each external electrode includes a Cu layer (10) containing a Cu component (11) as a main component and containing a glass component (12). The glass component (12) contains K.
A power conversion device according to the present disclosure comprises: a capacitor including an electrode and a capacitor terminal electrically connected to the electrode; a power module having a power module terminal electrically connected to the capacitor terminal; a bus bar having a bus bar terminal electrically connected to the capacitor terminal or the power module terminal; and a terminal overlap part in which respective portions of the capacitor terminal, the power module terminal and the bus bar terminal overlap. The terminal overlap part includes a joint part in which the capacitor terminal, the power module terminal, and the bus bar terminal have been fused together.
H02M 7/48 - Transformation d'une puissance d'entrée en courant continu en une puissance de sortie en courant alternatif sans possibilité de réversibilité par convertisseurs statiques utilisant des tubes à décharge avec électrode de commande ou des dispositifs à semi-conducteurs avec électrode de commande
64.
CAPACITOR MOUNTING STRUCTURE AND POWER CONVERSION APPARATUS
A capacitor mounting structure 1 comprises: a mounting substrate 10 that has a first main surface 10a and a second main surface 10b which oppose each other in the thickness direction; and a capacitor 20 that is disposed on the first main surface 10a of the mounting substrate 10. The capacitor 20 includes: a capacitor element 30 that has a first external electrode 31 and a second external electrode 32 on a surface of an element body 33; an exterior film 40 that accommodates the capacitor element 30 inside; and a first lead-out terminal 51 and a second lead-out terminal 52 that are electrically connected to the first external electrode 31 and the second external electrode 32, respectively, and that extend to the outside of the exterior film 40. The exterior film 40 includes a first film material 41 that covers one portion of the capacitor element 30, and a second film material 42 that covers the remaining portion of the capacitor element 30. A flange part 45 to which an outer edge of the first film material 41 and an outer edge of the second film material 42 are joined is provided on an outer edge of the exterior film 40. The first lead-out terminal 51 and the second lead-out terminal 52 are led out from between portions of the flange part 45 to the outside of the exterior film 40. At least one groove 15 is provided on the first main surface 10a of the mounting substrate 10. A portion of the flange part 45 including the first lead-out terminal 51 and the second lead-out terminal 52 is inserted into the groove part 15. The first lead-out terminal 51 and the second lead-out terminal 52 protrude from the second main surface 10b of the mounting substrate 10.
H02M 7/48 - Transformation d'une puissance d'entrée en courant continu en une puissance de sortie en courant alternatif sans possibilité de réversibilité par convertisseurs statiques utilisant des tubes à décharge avec électrode de commande ou des dispositifs à semi-conducteurs avec électrode de commande
H05K 3/32 - Connexions électriques des composants électriques ou des fils à des circuits imprimés
A high frequency module includes a mounting substrate, a first electronic component, a second electronic component, a third electronic component, and a side surface shield electrode. The mounting substrate has a first main surface and a second main surface which face each other. The first electronic component is disposed on the first main surface. The second electronic component is disposed on the first main surface. The third electronic component is disposed between the first electronic component and the second electronic component on the first main surface. The side surface shield electrode is provided on at least one side surface of the third electronic component. The mounting substrate includes a ground layer. The side surface shield electrode is connected to the ground layer.
H04B 1/00 - Détails des systèmes de transmission, non couverts par l'un des groupes Détails des systèmes de transmission non caractérisés par le milieu utilisé pour la transmission
A multiplexer includes first and second filters respectively with a first pass band and a second pass band on a higher frequency side than the first pass band. The first filter includes series-arm resonators and parallel-arm resonators, a resonance band width of at least one of the series-arm resonators is wider than the first pass band, one of the series-arm resonators is coupled closest to a common terminal among the series-arm resonators and the parallel-arm resonators. An anti-resonant frequency of the one of the series-arm resonators is lower than a high frequency end of the second pass band and is lowest among anti-resonant frequencies of the series-arm resonators.
H03H 9/13 - Moyens d'excitation, p. ex. électrodes, bobines pour réseaux se composant de matériaux piézo-électriques ou électrostrictifs
H03H 9/70 - Réseaux à plusieurs accès pour connecter plusieurs sources ou charges, fonctionnant sur des fréquences ou dans des bandes de fréquence différentes, à une charge ou à une source commune
A high frequency module includes a mounting substrate; and a power amplifier. The mounting substrate includes a first main surface and a second main surface. The first main surface and the second main surface face each other. The power amplifier is disposed on the first main surface of the mounting substrate and includes an RF bump and a ground bump. The ground bump is higher than the RF bump. The mounting substrate includes a first recess portion. The first recess portion is formed on the first main surface of the mounting substrate. The ground bump is disposed in the first recess portion of the mounting substrate.
A first diaphragm resonantly vibrates in a phase opposite to a phase of a unimorph piezoelectric vibrator in a direction orthogonal to the first diaphragm. A dimension in a longitudinal direction inside at least one frame body is four or more times a dimension in a lateral direction orthogonal to the longitudinal direction inside the at least one frame body. A second diaphragm is located in a region between both edges in the lateral direction of an inner peripheral surface of the at least one frame body as viewed in the direction orthogonal to the first diaphragm, and average distances in the lateral direction between edges in the lateral direction of the inner peripheral surface of the at least one frame body and edges in the lateral direction of the second diaphragm are one sixth or less the dimension in the lateral direction inside the at least one frame body.
A filter device is provided that includes series resonators connected between a pair of ports; and shunt resonators that are each connected between a ground connection and a node between the series resonators. A shunt resonator having a highest resonance frequency of the shunt resonators has a smallest capacitance value of the shunt resonators. Moreover, the resonators each include a piezoelectric layer attached either directly or via one or more intermediate layers to the substrate, and an interdigital transducer (IDT) at the piezoelectric layer and that includes a plurality of interleaved fingers.
A high frequency module includes a mounting substrate, a first electronic component, and a second electronic component. The mounting substrate includes a first main surface, a second main surface, a first recess portion, and a second recess portion. A first bump of the first electronic component is disposed in the first recess portion. A second bump of the second electronic component is disposed in the second recess portion. The mounting substrate includes a first region in which a plurality of recess portions including the first recess portion and the second recess portion are formed and a second region in which the plurality of the recess portions are not formed. The second region of the mounting substrate is positioned between the first bump of the first electronic component and the second bump of the second electronic component in a plan view in a thickness direction of the mounting substrate.
H01L 23/00 - Détails de dispositifs à semi-conducteurs ou d'autres dispositifs à l'état solide
H01L 23/29 - Encapsulations, p. ex. couches d’encapsulation, revêtements caractérisées par le matériau
H01L 23/538 - Dispositions pour conduire le courant électrique à l'intérieur du dispositif pendant son fonctionnement, d'un composant à un autre la structure d'interconnexion entre une pluralité de puces semi-conductrices se trouvant au-dessus ou à l'intérieur de substrats isolants
H01L 25/065 - Ensembles consistant en une pluralité de dispositifs à semi-conducteurs ou d'autres dispositifs à l'état solide les dispositifs étant tous d'un type prévu dans une seule des sous-classes , , , , ou , p. ex. ensembles de diodes redresseuses les dispositifs n'ayant pas de conteneurs séparés les dispositifs étant d'un type prévu dans le groupe
H01L 25/16 - Ensembles consistant en une pluralité de dispositifs à semi-conducteurs ou d'autres dispositifs à l'état solide les dispositifs étant de types couverts par plusieurs des sous-classes , , , , ou , p. ex. circuit hybrides
A MEMS mirror apparatus is provided and a method is provided to drive a MEMS mirror apparatus. In this aspect, a reflector entity includes a reflector, or a reflector and a gimbal that is configured to be driven into a quasistatic see-saw motion about a quasi-static oscillation axis by electrostatically driving at least one elongated drive plate into a first drive motion. The drive motion is conveyed to the reflector entity by at least one lever extending from the at least one elongated drive plate and at least one first spring coupling the at least one lever to the reflector entity or to an arm extending from the reflector entity. The first drive motion is a quasi-static see-saw drive motion of the elongated drive plate about a drive axis aligned with longitudinal dimension of the elongated drive plate.
G02B 26/08 - Dispositifs ou dispositions optiques pour la commande de la lumière utilisant des éléments optiques mobiles ou déformables pour commander la direction de la lumière
A dielectric ceramic having: a rutile compound represented by (TixSn1−x)O2 as a main constituent; and Nb, wherein 0.40≤x≤0.60, and in a sectional view the dielectric ceramic includes: a Ti-rich phase region in which A is 0.55 or more, a Sn-rich phase region in which B is 0.55 or more, A=(Ti content (atom %))/(total content of Ti and Sn (atom %)), B=(Sn content (atom %))/(total content of Ti and Sn (atom %)), 0.005 mol %≤y≤0.020 mol %, 16 nm≤DTi≤20 nm, 15 nm≤DSn≤19 nm, wherein y (mol %) is a content of Nb with respect to 100 mol % of a content of the rutile compound, DTi (nm) is an average size of the Ti-rich phase region, and DSn (nm) is an average size of the Sn-rich phase region.
C04B 35/495 - Produits céramiques mis en forme, caractérisés par leur compositionCompositions céramiquesTraitement de poudres de composés inorganiques préalablement à la fabrication de produits céramiques à base d'oxydes à base d'oxydes de vanadium, de niobium, de tantale, de molybdène ou de tungstène ou de leurs solutions solides avec d'autres oxydes, p. ex. vanadates, niobates, tantalates, molybdates ou tungstates
A capacitor embedded substrate that includes: a core substrate that includes a base that defines an opening in a thickness direction; a capacitor component in the opening of the core substrate; and a sealing member sealing the core substrate and the capacitor component, wherein the capacitor component includes a capacitor main body, a through conductor in a through-hole penetrating the capacitor main body in the thickness direction, and a conductor wiring layer on opposed end portions of the through conductor in the thickness direction, a first surface of the core substrate and a first surface of the capacitor component exist on a same plane, and a diameter of an end portion of the through-hole on a first sealing portion side is larger than a diameter of an end portion of the through-hole on a second sealing portion side.
A multilayer ceramic capacitor includes a second alloy portion including one metal element provided in a greatest amount among metal elements of an internal electrode layer, and one or more metal elements among a metal group including Sn, In, Ga, Zn, Bi, Pb, Cu, Ag, Pd, Pt, Ph, Ir, Ru, Os, Fe, V, and Y is provided between a second dielectric ceramic layer and a first internal electrode layer, and between a second dielectric ceramic layer and a second internal electrode layer, respectively.
A bulk acoustic resonator is provided that includes a piezoelectric layer, and an interdigital transducer on a surface of the piezoelectric layer and including a plurality of interleaved fingers. At least one finger of the plurality of interleaved fingers comprises a first layer having a bottom surface that contacts the surface of the piezoelectric layer. The at least one finger includes a second layer having a bottom surface that contacts a top surface of the first layer. Moreover, a width of the bottom surface of the second layer is less than a width of the bottom surface of the first layer.
H03H 9/54 - Filtres comprenant des résonateurs en matériau piézo-électrique ou électrostrictif
H03H 3/04 - Appareils ou procédés spécialement adaptés à la fabrication de réseaux d'impédance, de circuits résonnants, de résonateurs pour la fabrication de résonateurs ou de réseaux électromécaniques pour la fabrication de résonateurs ou de réseaux piézo-électriques ou électrostrictifs pour obtenir une fréquence ou un coefficient de température désiré
H03H 9/02 - Réseaux comprenant des éléments électromécaniques ou électro-acoustiquesRésonateurs électromécaniques Détails
H03H 9/13 - Moyens d'excitation, p. ex. électrodes, bobines pour réseaux se composant de matériaux piézo-électriques ou électrostrictifs
76.
SOLIDLY-MOUNTED TRANSVERSELY-EXCITED FILM BULK ACOUSTIC FILTERS WITH MULTIPLE PIEZOELECTRIC PLATE THICKNESSES
A filter device is provided that includes a piezoelectric layer having a first portion having a first thickness and a second portion having a second thickness less than the first thickness; an acoustic multilayer reflector attached to the piezoelectric layer; and a conductor pattern on the first portion and the second portion of the piezoelectric layer. The conductor pattern includes a first IDT with interleaved fingers on the first portion, and a second IDT with interleaved fingers on the second portion. At least a portion of interleaved fingers of the second IDT has a width that is greater than or equal to 0.2 times a pitch of the second IDT and less than or equal to 0.3 times the pitch of the second IDT.
H03H 3/02 - Appareils ou procédés spécialement adaptés à la fabrication de réseaux d'impédance, de circuits résonnants, de résonateurs pour la fabrication de résonateurs ou de réseaux électromécaniques pour la fabrication de résonateurs ou de réseaux piézo-électriques ou électrostrictifs
H03H 3/04 - Appareils ou procédés spécialement adaptés à la fabrication de réseaux d'impédance, de circuits résonnants, de résonateurs pour la fabrication de résonateurs ou de réseaux électromécaniques pour la fabrication de résonateurs ou de réseaux piézo-électriques ou électrostrictifs pour obtenir une fréquence ou un coefficient de température désiré
H03H 9/02 - Réseaux comprenant des éléments électromécaniques ou électro-acoustiquesRésonateurs électromécaniques Détails
H03H 9/17 - Détails de réalisation de résonateurs se composant de matériau piézo-électrique ou électrostrictif ayant un résonateur unique
H03H 9/205 - Détails de réalisation de résonateurs se composant de matériau piézo-électrique ou électrostrictif ayant des résonateurs multiples
H03H 9/54 - Filtres comprenant des résonateurs en matériau piézo-électrique ou électrostrictif
77.
ANTENNA MODULE AND COMMUNICATION DEVICE HAVING THE SAME MOUNTED THEREON
An antenna module includes: a first substrate having a first surface and a second surface facing each other; a second substrate having a third surface and a fourth surface facing each other and disposed such that the third surface faces the second surface of the first substrate; a radiation element provided on a first surface side of the first substrate; a first ground electrode provided in the first substrate and facing the radiation element in a normal direction of the first substrate; a power inductor provided closer to the second substrate than the first ground electrode in plan view in a normal direction of the first substrate; and an electronic component provided on a fourth surface side of the second substrate and connected to the power inductor.
H01L 23/538 - Dispositions pour conduire le courant électrique à l'intérieur du dispositif pendant son fonctionnement, d'un composant à un autre la structure d'interconnexion entre une pluralité de puces semi-conductrices se trouvant au-dessus ou à l'intérieur de substrats isolants
H01L 25/18 - Ensembles consistant en une pluralité de dispositifs à semi-conducteurs ou d'autres dispositifs à l'état solide les dispositifs étant de types prévus dans plusieurs différents groupes principaux de la même sous-classe , , , , ou
H01Q 1/24 - SupportsMoyens de montage par association structurale avec d'autres équipements ou objets avec appareil récepteur
H01Q 1/48 - Moyens de mise à la terreÉcrans de terreContrepoids
An acoustic wave device includes a piezoelectric substrate that includes a support including a support substrate and a piezoelectric film including a piezoelectric layer on the support, and an IDT electrode, on the piezoelectric layer, that includes first and second busbars facing each other, and first and second electrode fingers. An acoustic reflection portion is located where the support overlaps the IDT electrode in plan view. When a thickness of the piezoelectric film is d and a center-to-center distance between the first and second electrode fingers adjacent to each other is p, d/p is about 0.5 or less. An overlap region is where the first and second electrode fingers adjacent to each other overlap in an electrode finger orthogonal direction and includes a middle region, and first and second edge regions on both sides of the middle region in an electrode finger extension direction.
There is provided a resin-sealed component the height of which can be easily reduced. A resin-sealed component includes a resin layer, at least one chip-type electronic component, a first inorganic thin film insulating layer, and a first thin film conductive layer. The resin layer includes a first principal surface and a second principal surface located opposite from each other. The at least one chip-type electronic component is provided inside the resin layer. The first inorganic thin film insulating layer is provided on or to the first principal surface of the resin layer. The first thin film conductive layer is provided in the first inorganic thin film insulating layer.
An optical coupler including: an optical fiber fixing portion, a reflective portion that changes a traveling direction of light from a first to a second direction, and a holding portion that holds each of the optical fiber fixing portion and the reflective portion. The holding portion includes a first side wall portion, a second side wall portion, and a third side wall portion positioned on an opposite side of the second side wall portion along a third direction. Each of the optical fiber fixing portion and the reflective portion is connected to each of the second side wall portion and the third side wall portion. At least any one of a width of (1) the first side wall portion along the first direction, (2) the second side wall portion along the third direction, or (3) the third side wall portion along the third direction continuously increases toward the second direction.
A fluid control device includes a first main plate, a second main plate, a driving body, a frame body, a plurality of support bodies, a plurality of gaps, a side wall member, a valve film, and a fixing member. A pump chamber is formed by a flat plate part consisting of the first main plate, the frame body, and the plurality of support bodies, and the second main plate and the side wall member. The valve film is disposed on a main surface of the first main plate on the side where the pump chamber is located. The valve film has an annular shape and fixed to the first main plate by the fixing member so that an outer end thereof is a movable end. The outer end of the valve film overlaps the plurality of gaps located between the plurality of support portions in plan view.
An acoustic wave device includes a piezoelectric layer and an IDT electrode. The IDT electrode includes first and second busbars, and first and second electrode fingers interdigitated with each other. A virtual line connecting ends of the second electrode fingers is defined as a first envelope, a virtual line connecting ends of the first electrode fingers is defined as a second envelope, and a region between the first and second envelopes is an intersection region. Shapes of the first and second electrode fingers include at least two curved portions different from each other in the intersection region. In the intersection region, a value of at least one of a duty ratio, an electrode finger pitch, and thicknesses of the first and second electrode fingers changes in one of a direction in which the value increases and the direction in which the value decreases.
A control device includes a CPU used as an execution device and a storage device. The storage device stores multiple vibration modes for haptic sensations that are presented by a haptic sensation presentation device for rehabilitation. The CPU performs a preliminary drive process, a parameter acquisition process, and a mode selection process. In the preliminary drive process, the CPU drives the vibrator in the multiple vibration modes to present haptic sensations corresponding to the vibration modes. In the parameter acquisition process, the CPU obtains effect parameters for the respective vibration modes. The effect parameters indicate the effectiveness of the rehabilitation on the user achieved when the vibrator is driven in the respective vibration modes. In the mode selection process, the CPU selects a specific mode from the multiple vibration modes based on the effect parameters obtained in the respective vibration modes.
An electronic component including an element body and external electrodes provided on the element body, in which metal particles having a particle radius of 10 nm or more and 1000 nm or less are disposed on the element body so as to form a code.
G06K 7/14 - Méthodes ou dispositions pour la lecture de supports d'enregistrement par radiation électromagnétique, p. ex. lecture optiqueMéthodes ou dispositions pour la lecture de supports d'enregistrement par radiation corpusculaire utilisant la lumière sans sélection des longueurs d'onde, p. ex. lecture de la lumière blanche réfléchie
H01G 4/232 - Bornes pour la connexion électrique d'au moins deux couches d'un condensateur à empilement ou à enroulement
An acoustic wave device includes a substrate, an outer connection electrode arranged on a first principal surface of the substrate, and an outer shield layer arranged on side surfaces of the substrate. The substrate has the first principal surface and a second principal surface that are mutually opposed, and the side surfaces connecting the first principal surface and the second principal surface together. The outer connection electrode has a tip surface exposed.
An electronic component includes a thin-film capacitor including a lower electrode disposed on a first surface that is a surface of a substrate, a capacitor dielectric film disposed on the lower electrode, and an upper electrode disposed on the capacitor dielectric film. An insulating resin film is disposed on the first surface so as to cover the thin-film capacitor. The upper electrode includes two layers that are a titanium film primarily including Ti and a platinum film primarily including Pt. The platinum film is interposed between the titanium film and the resin film.
H01L 23/00 - Détails de dispositifs à semi-conducteurs ou d'autres dispositifs à l'état solide
H01L 25/16 - Ensembles consistant en une pluralité de dispositifs à semi-conducteurs ou d'autres dispositifs à l'état solide les dispositifs étant de types couverts par plusieurs des sous-classes , , , , ou , p. ex. circuit hybrides
A filter device is provided that includes a first and second series resonator connected between a pair of ports. The device may include at least one shunt resonator connected between a ground connection and a node between the first series resonator and the second series resonator or between one of the pair of ports and one of the first and second series resonators, wherein the first and second series resonators include a first and second capacitance value, respectively, that are different from each other, and wherein the first and second series resonator and the at least one shunt resonator includes: a substrate, at least one piezoelectric layer attached either directly or via one or more intermediate layers to the substrate, and an interdigital transducer (IDT) at a surface of the at least one piezoelectric layer and including a plurality of interleaved IDT fingers.
A capacitor embedded substrate that includes: a core substrate that includes a base that defines an opening in a thickness direction; a capacitor component in the opening of the core substrate; and a sealing member sealing the core substrate and the capacitor component, wherein the capacitor component includes a capacitor main body, a through conductor in a through-hole penetrating the capacitor main body, and a conductor wiring layer on opposed end portions of the through conductor, a distance from a surface of the conductor wiring layer to a surface of the sealing member on a first side is larger than a distance from a surface of the conductor wiring layer to a surface of the sealing member on a second side, and a diameter of an end of the through-hole on the first side is larger than a diameter of an end of the through-hole on the second side.
To accurately control a direction indicator of a motorcycle, a program causes a computer to acquire traveling data of a motorcycle that is continuously measured for a predetermined period from at least one sensor and determine a corresponding driving operation. The driving operation corresponds to the traveling data, based on the traveling data and a plurality of pieces of reference traveling data that is continuous for the predetermined period and is associated with each of a plurality of driving operations of the motorcycle.
B62J 6/057 - Déclenchement automatique, p. ex. par capteurs
G07C 5/04 - Enregistrement ou indication du temps de circulation, de fonctionnement, d'arrêt ou d'attente uniquement utilisant des moyens de comptage ou compteurs à horloge
A solid electrolytic capacitor that includes: a sheet multilayer body having a plurality of flat film-shaped capacitor elements and a plurality of flat film-shaped cathode-electrode electrode foils alternately stacked with each other, each of the plurality of flat film-shaped capacitor elements comprising a flat film-shaped anode-electrode electrode foil having a porous portion in a predetermined depth from the surface, a dielectric layer on the porous portion, and a solid electrolyte layer on the dielectric layer; a first metal portion at an end portion of the anode-electrode electrode foil; and an insulating resin sealing the sheet multilayer body, wherein a first pore diameter of the first metal portion is larger than a second pore diameter of the porous portion of the anode-electrode electrode foil.
A power feeding member that includes: a joining member having a joining surface joinable to a piezoelectric element; at least one contact portion on the joining member and electrically connectable to an electrode of the piezoelectric element; and a wiring portion extending from the joining member, wherein when viewed along a first direction intersecting the joining surface, the at least one contact portion and a connection portion between the joining member and the wiring portion are located at offset positions.
H10N 30/87 - Électrodes ou interconnexions, p. ex. connexions électriques ou bornes
H10N 30/20 - Dispositifs piézo-électriques ou électrostrictifs à entrée électrique et sortie mécanique, p. ex. fonctionnant comme actionneurs ou comme vibrateurs
Circuits and methods for protecting a multi-level power converter using no more than two high-voltage FET switches while allowing all or most other power switches to be low-voltage FET switches. Some embodiments provide protective high-voltage top and bottom FETs designed to saturate before the remaining low-power FET switches saturate. Other embodiments may use only low-power FETs for the power switches but provide protective circuits configured to be in an always-ON (conducting) state when in normal power conversion operation, and to quickly switch to an OFF (non-conducting) state in the event of transients or a fault condition. Optionally, one or more of the protective circuits may be used in a controlled manner to limit or block current flow during certain types of fault conditions and/or to limit in-rush current during startup of a power converter.
H02M 1/32 - Moyens pour protéger les convertisseurs autrement que par mise hors circuit automatique
H02M 3/07 - Transformation d'une puissance d'entrée en courant continu en une puissance de sortie en courant continu sans transformation intermédiaire en courant alternatif par convertisseurs statiques utilisant des résistances ou des capacités, p. ex. diviseur de tension utilisant des capacités chargées et déchargées alternativement par des dispositifs à semi-conducteurs avec électrode de commande
H02M 3/158 - Transformation d'une puissance d'entrée en courant continu en une puissance de sortie en courant continu sans transformation intermédiaire en courant alternatif par convertisseurs statiques utilisant des tubes à décharge avec électrode de commande ou des dispositifs à semi-conducteurs avec électrode de commande utilisant des dispositifs du type triode ou transistor exigeant l'application continue d'un signal de commande utilisant uniquement des dispositifs à semi-conducteurs avec commande automatique de la tension ou du courant de sortie, p. ex. régulateurs à commutation comprenant plusieurs dispositifs à semi-conducteurs comme dispositifs de commande finale pour une charge unique
A winding coil component includes a core and a wire wound around the core, and has a structure where metal terminals are less easily removable from the flange portions. A flange portion of a core has a mount surface, a top surface, an inner end surface, an outer end surface, a first side surface, and a second side surface. A metal terminal is formed from a metal plate, and includes a mount-surface facing portion, an outer-end-surface facing portion, and a side-surface facing portion respectively facing the mount surface, the outer end surface, and at least one of the first side surface and the second side surface. A coil component further includes a second restrictor that restricts movement of the metal terminal relative to the flange portion in a L-direction, and a first restrictor that restricts movement of the metal terminal relative to the flange portion in a T-direction.
An acoustic wave device includes a piezoelectric layer, an IDT electrode including electrode fingers, and a dielectric film covering the IDT electrode. When viewed in a direction orthogonal to a direction in which the electrode fingers extend, an area where adjacent two or more of the electrode fingers overlap one another is an intersecting area. The acoustic wave device further includes a thin-film layer at least a portion of which is embedded in the dielectric film, at least a portion of which overlaps the intersecting area in a plan view, an entirety of which does not overlap the electrode fingers in a plan view, having a higher density than the dielectric film, and having a smaller thickness than the electrode fingers. The electrode fingers and the thin-film layer are located at different positions in a thickness direction of the dielectric film.
A capacitor element that includes: a capacitor portion including an anode plate including a core portion and a porous portion on the core portion, a dielectric layer on the porous portion, and a cathode layer on the dielectric layer 13; a seal layer covering the capacitor portion; a first through-hole conductor extending through the capacitor portion and the seal layer and electrically directly connected to the anode plate 11; a second through-hole conductor extending through the capacitor portion and the seal layer and electrically directly connected to the cathode layer; a first outer electrode layer on a surface of the seal layer and electrically connected to the first through-hole conductor, wherein at least a part of the first outer electrode layer overlaps the cathode layer in the thickness direction; and a second outer electrode layer on a surface of the seal layer and electrically connected to the second through-hole conductor.
Circuits and methods for achieving good AM-AM and AM-PM metrics while achieving good power, PAE, linearity, and EVM performance in an amplifier. Embodiments provide an equalization approach which compensates for AM-AM and AM-PM variations in an amplifier by controlling bias voltage versus output power to alter the AM-AM and AM-PM profiles imposed by the amplifier. Differential amplifier embodiments include cross-coupled common-gate transistors that generate an equalization voltage that alters the gate bias voltage of respective main FETs in proportion to a power level present at the respective drains of the main FETs. Single-ended amplifier embodiments include an equalization circuit that alters the bias voltage to the gate of a main FET in proportion to a power level present at the main FET drain. Embodiments may also include a linearization circuit which alters the AM-PM profile of an input signal to compensate for the AM-PM profile imposed by a coupled amplifier.
H03F 1/02 - Modifications des amplificateurs pour augmenter leur rendement, p. ex. étages classe A à pente glissante, utilisation d'une oscillation auxiliaire
H03F 1/32 - Modifications des amplificateurs pour réduire la distorsion non linéaire
H03F 3/213 - Amplificateurs de puissance, p. ex. amplificateurs de classe B, amplificateur de classe C comportant uniquement des dispositifs à semi-conducteurs dans des circuits intégrés
A DCDC converter module is provided that includes an insulating substrate having first and second surfaces; and a circuit section at the insulating substrate. The circuit section includes a switching element and an output filter connected to the switching element in series from an input end to an output. The output filter has an output inductor, and first and second output capacitors connected in parallel to each other and having different capacitance. A current path from the switching element to the output end of the circuit section penetrates through the insulating substrate from the first surface to the second surface. The first and second output capacitors are different from each other in position in a thickness direction and are arranged to the current path. An inductor component is between a plus terminal of the first output capacitor and a plus terminal of the second output capacitor.
Methods and devices addressing power tracking of transmission systems using antenna arrays are disclosed. The disclosed teachings may be implemented on a channel element to channel element basis, are adaptive and can be implemented on short time durations such as time slots. Power efficiency can be improved when applying the described methods to the design of systems with antenna arrays.
H02J 50/40 - Circuits ou systèmes pour l'alimentation ou la distribution sans fil d'énergie électrique utilisant plusieurs dispositifs de transmission ou de réception
An acoustic wave device includes a piezoelectric substrate including a support including a support substrate and a piezoelectric film on the support and including a piezoelectric layer, and an IDT electrode on the piezoelectric layer and including first and second busbars and first and second electrode fingers. An acoustic reflection portion is in the support overlapping the IDT electrode. When a thickness of the piezoelectric film is d and a center-to-center distance between the adjacent electrode fingers is p, d/p is about 0.5 or smaller. When viewed in an electrode finger orthogonal direction, a region in which the adjacent electrode fingers overlap each other is an intersecting region. A region between the intersecting region and the first and second busbars includes first and second gap regions. The intersecting region includes a central region and first and second edge regions extending across the central region in the electrode finger extending direction.
A hybrid coupler-based T/R switch for use in a TDM system. An output hybrid coupler of a balanced amplifier is used to selectively switch a transmit or receive path to an antenna. During transmission, power at the output of the balanced amplifier is delivered directly to the antenna. During reception, power from the antenna is reflected through ports of the hybrid coupler connected to respective two amplifiers of the balanced amplifier, to constructively combine at a port of the coupler coupled to the receive path, with a ninety degrees phase shift. A pair of shunting switches or series switches coupled to the ports of the hybrid coupler connected to the two amplifiers, and a shunting switch coupled to the port coupled to the receive path, control operation of the hybrid coupler-based T/R switch. An additional switch coupled to the port of the coupler that is coupled to the receive path can provide a bypass path for reception or transmission through the antenna while bypassing the balanced amplifier of the transmit path and an amplifier of the receive path.
