Abrégé

An optical network element for a hardware configured optical network includes a first optical port that receives an input optical signal comprising receive control information from the hardware configured optical network. A demodulator optically coupled to the first optical port decodes the receive control information for configuring the optical network element. A modulator having an electrical modulation input that receives transmit control information imparts a modulation onto an optical carrier thereby generating a transmit optical control signal representing the transmit control information. A second optical port transmits the transmit optical control signal representing the transmit control information to the hardware configured optical network.

Classes IPC  ?

• H04J 14/02 - Systèmes multiplex à division de longueur d'onde
• H04B 10/077 - Dispositions pour la surveillance ou le test de systèmes de transmissionDispositions pour la mesure des défauts de systèmes de transmission utilisant un signal en service utilisant un signal de surveillance ou un signal supplémentaire

Abrégé

A plasmon-based optical modulator comprises a substrate, a layer of high reflectivity material disposed over the substrate, a relatively thin dielectric layer disposed over a top major surface of the layer of high reflectivity material and a plurality of graphene strips disposed in parallel across a top major surface of the relatively thin dielectric layer, each graphene strip exhibiting a predetermined width w, with adjacent strips separated by a predetermined spacing s. A first electrical contact is coupled to the plurality of graphene strips and a second electrical contact is coupled to the layer of high reflectivity material, where the values of w, s, and voltage applied between the first and second electrical contacts determines a resonant wavelength of the plasmon-based optical modulator, with changes in the applied voltage changing between absorption and non-absorption of an applied optical input signal.

Classes IPC  ?

• G02F 1/01 - Dispositifs ou dispositions pour la commande de l'intensité, de la couleur, de la phase, de la polarisation ou de la direction de la lumière arrivant d'une source lumineuse indépendante, p. ex. commutation, ouverture de porte ou modulationOptique non linéaire pour la commande de l'intensité, de la phase, de la polarisation ou de la couleur

Abrégé

A compact, wavelength-stabilized laser source is provided by utilizing a specialty gain element (i.e., formed to include a curved waveguide topology), where a separate wavelength stabilization component (for example, a fiber Bragg grating (FBG)) is used one of the mirrors for the laser cavity. That is, the FBG takes the place of the physical "front facet" of the gain element, and functions to define the laser cavity in the first instance, while also utilizing the grating structure to impart the desired wavelength stability to the output from the packaged laser source. As a result, the FBG is disposed within the same package used to house the gain element and provides a wavelength-stabilized laser source in a compact form.

Classes IPC  ?

• H01S 3/136 - Stabilisation de paramètres de sortie de laser, p. ex. fréquence ou amplitude par commande de dispositifs placés dans la cavité
• G02B 6/02 - Fibres optiques avec revêtement

Abrégé

An immobilized selenium body, made from carbon and selenium and optionally sulfur, makes selenium more stable, requiring a higher temperature or an increase in kinetic energy for selenium to escape from the immobilized selenium body and enter a gas system, as compared to selenium alone. Immobilized selenium localized in a carbon skeleton can be utilized in a rechargeable battery. Immobilization of the selenium can impart compression stress on both the carbon skeleton and the selenium. Such compression stress enhances the electrical conductivity in the carbon skeleton and among the selenium particles and creates an interface for electrons to be delivered and or harvested in use of the battery. A rechargeable battery made from immobilized selenium can be charged or discharged at a faster rate over conventional batteries and can demonstrate excellent cycling stability.

Classes IPC  ?

• C01B 32/10 - Fluorures de carbone, p. ex. [CF]n ou [C2F]n
• H01M 4/134 - Électrodes à base de métaux, de Si ou d'alliages
• H01M 4/36 - Emploi de substances spécifiées comme matériaux actifs, masses actives, liquides actifs
• H01M 4/38 - Emploi de substances spécifiées comme matériaux actifs, masses actives, liquides actifs d'éléments simples ou d'alliages
• H01M 10/052 - Accumulateurs au lithium
• H01M 10/058 - Structure ou fabrication

Abrégé

An immobilized selenium body, made from carbon and selenium and optionally sulfur, makes selenium more stable, requiring a higher temperature or an increase in kinetic energy for selenium to escape from the imrnobilized selenium body and enter a gas system, as compared to selenium alone. Immobilized selenium localized in a carbon skeleton can be utilized in a rechargeable battery. hnmobilization of the seleni-um can impart compression stress on both the carbon skeleton and the selenium. Such compression stress en-hances the electrical conductivity in the carbon skeleton and among the selenium particles and creates an inter-face for electrons to be delivered and or harvested in use of the battery. A rechargeable battery made from immobilized selenium can be charged or discharged at a faster rate over conventional batteries and can demon-strate excellent cycling stability.WO 2017/143021 Al I 11 111 11111111 1111111110 fill 11111111 11111 0111 MO 0111 Mill 11 1111 1111111 MI HEIMRU, RW, SA, SC, SD, SE, SG, SK, SL, SM, ST, SV, SY, SI, SK, SM, TR), OAPI (BF, BI, CF, CG, CI, CM, GA,TH, TJ, TM, TN, TR, TT, TZ, UA, UG, US, UZ, VC, GN, GQ, GW, KM, ML, MR, NE, SN, TD, TG).VN, ZA, ZM, ZW.Declarations under Rule 4.17:(84) Designated States (unless otherwise indicated, for every _as to the applicant's entitlement to claim the priority ofkind of regional protection available): ARIPO (BW, GH, the earlier application (Rule 4.17(110) GM, KE, LR, LS, MW, MZ, NA, RW, SD, SL, ST, SZ,TZ, UG, ZM, ZW), Eurasian (AM, AZ, BY, KG, KZ, RU, Published:TJ, TM), European (AL, AT, BE, BG, CH, CY, CZ, DE, _with international search report (Art. 21(3))DK, EE, ES, FI, FR, GB, GR, HR, HU, IE, IS, IT, LT,LU, LV, MC, MK, MT, NL, NO, PL, PT, RO, RS, SE,Date Recue/Date Received 2023-03-28

Classes IPC  ?

• C04B 35/52 - Produits céramiques mis en forme, caractérisés par leur compositionCompositions céramiquesTraitement de poudres de composés inorganiques préalablement à la fabrication de produits céramiques à base de non oxydes à base de carbone, p. ex. graphite
• C04B 41/85 - Revêtement ou imprégnation avec des substances inorganiques
• H01M 4/133 - Électrodes à base de matériau carboné, p. ex. composés d'intercalation du graphite ou CFx
• H01M 4/1393 - Procédés de fabrication d’électrodes à base de matériau carboné, p. ex. composés au graphite d'intercalation ou CFx
• H01M 10/05 - Accumulateurs à électrolyte non aqueux

Abrégé

An immobilized selenium body, made from carbon and selenium and optionally sulfur, makes selenium more stable, requiring a higher temperature or an increase in kinetic energy for selenium to escape from the immobilized selenium body and enter a gas system, as compared to selenium alone. Immobilized selenium localized in a carbon skeleton can be utilized in a rechargeable battery. Immobilization of the selenium can impart compression stress on both the carbon skeleton and the selenium. Such compression stress enhances the electrical conductivity in the carbon skeleton and among the selenium particles and creates an interface for electrons to be delivered and or harvested in use of the battery. A rechargeable battery made from immobilized selenium can be charged or discharged at a faster rate over conventional batteries and can demonstrate excellent cycling stability.

Classes IPC  ?

• H01M 4/36 - Emploi de substances spécifiées comme matériaux actifs, masses actives, liquides actifs
• H01M 4/38 - Emploi de substances spécifiées comme matériaux actifs, masses actives, liquides actifs d'éléments simples ou d'alliages
• H01M 4/134 - Électrodes à base de métaux, de Si ou d'alliages
• H01M 10/052 - Accumulateurs au lithium
• H01M 10/058 - Structure ou fabrication
• H01M 2/14 - Séparateurs; Membranes; Diaphragmes; Eléments d'espacement
• C01B 32/10 - Fluorures de carbone, p. ex. [CF]n ou [C2F]n

Abrégé

A composite extractant-enhanced polymer resin comprising an extractant and a polymer resin for direct extraction of valuable metals such as rare earth metals, and more specifically, scandium, from an acid-leaching slurry and/or acid-leaching solution in which ferric ions are not required to be reduced into ferrous ions. The extractant may be cationic, non-ionic, or anionic. More specifically, the extractant di(2-ethylhexyl)phosphoric acid may be used. The polymer resin may be non-functional or have functional groups of sulfonic acid, carboxylic acid, iminodiacetic acid, phosphoric acid, or amines. The composite extractant-enhanced polymer resin may be used for extraction of rare earth metals from acid-leaching slurries or solutions.

Classes IPC  ?

• G21G 4/08 - Sources radioactives autres que les sources de neutrons caractérisées par des aspects de leur structure spécialement adaptées aux applications médicales
• B01J 49/00 - Régénération ou réactivation des échangeurs d'ionsAppareillage à cet effet

Abrégé

Disclosed is method of preparing a selenium carbon composite material and a use of the selenium carbon composite material in a cathode of a lithium selenium secondary battery. A battery formed with a cathode of the disclosed selenium carbon composite material has high energy density and stable electrochemical performance. The disclosed selenium carbon composite material can effectively shorten the migration distance of lithium ions during charging and discharging of the battery and improve conductivity and utilization of selenium after compounding carbon and selenium. Multiple batteries formed with cathodes of the disclosed selenium carbon composite material can be assembled into a lithium selenium pouch-cell battery having stable electrochemical performance and high energy density.

Classes IPC  ?

• C01B 19/00 - SéléniumTellureLeurs composés
• C01B 32/00 - CarboneSes composés
• C01B 32/15 - Matières carbonées nanométriques
• C04B 35/528 - Produits céramiques mis en forme, caractérisés par leur compositionCompositions céramiquesTraitement de poudres de composés inorganiques préalablement à la fabrication de produits céramiques à base de non oxydes à base de carbone, p. ex. graphite obtenus à partir de particules carbonées avec ou sans autres composants non organiques
• C04B 41/85 - Revêtement ou imprégnation avec des substances inorganiques
• H01M 4/133 - Électrodes à base de matériau carboné, p. ex. composés d'intercalation du graphite ou CFx
• H01M 4/1393 - Procédés de fabrication d’électrodes à base de matériau carboné, p. ex. composés au graphite d'intercalation ou CFx
• H01M 10/052 - Accumulateurs au lithium
• H01M 10/0569 - Matériaux liquides caracterisés par les solvants

Abrégé

Disclosed is method of preparing a selenium carbon composite material and a use of the selenium carbon composite material in a cathode of a lithium selenium secondary battery. A battery formed with a cathode of the disclosed selenium carbon composite material has high energy density and stable electrochemical performance. The disclosed selenium carbon composite material can effectively shorten the migration distance of lithium ions during charging and discharging of the battery and improve conductivity and utilization of selenium after compounding carbon and selenium. Multiple batteries formed with cathodes of the disclosed selenium carbon composite material can be assembled into a lithium selenium pouch-cell battery having stable electrochemical performance and high energy density.

Classes IPC  ?

• C01B 19/00 - SéléniumTellureLeurs composés
• C01B 32/00 - CarboneSes composés
• C01B 32/15 - Matières carbonées nanométriques
• C04B 35/528 - Produits céramiques mis en forme, caractérisés par leur compositionCompositions céramiquesTraitement de poudres de composés inorganiques préalablement à la fabrication de produits céramiques à base de non oxydes à base de carbone, p. ex. graphite obtenus à partir de particules carbonées avec ou sans autres composants non organiques
• C04B 41/85 - Revêtement ou imprégnation avec des substances inorganiques
• H01M 4/133 - Électrodes à base de matériau carboné, p. ex. composés d'intercalation du graphite ou CFx
• H01M 4/1393 - Procédés de fabrication d’électrodes à base de matériau carboné, p. ex. composés au graphite d'intercalation ou CFx
• H01M 10/052 - Accumulateurs au lithium
• H01M 10/0569 - Matériaux liquides caracterisés par les solvants

Abrégé

Disclosed is method of preparing a selenium carbon composite material and a use of the selenium carbon composite material in a cathode of a lithium selenium secondary battery. A battery formed with a cathode of the disclosed selenium carbon composite material has high energy density and stable electrochemical performance. The disclosed selenium carbon composite material can effectively shorten the migration distance of lithium ions during charging and discharging of the battery and improve conductivity and utilization of selenium after compounding carbon and selenium. Multiple batteries formed with cathodes of the disclosed selenium carbon composite material can be assembled into a lithium selenium pouch-cell battery having stable electrochemical performance and high energy density.

Classes IPC  ?

• C04B 35/528 - Produits céramiques mis en forme, caractérisés par leur compositionCompositions céramiquesTraitement de poudres de composés inorganiques préalablement à la fabrication de produits céramiques à base de non oxydes à base de carbone, p. ex. graphite obtenus à partir de particules carbonées avec ou sans autres composants non organiques
• C04B 35/63 - Préparation ou traitement des poudres individuellement ou par fournées utilisant des additifs spécialement adaptés à la formation des produits
• C04B 35/632 - Additifs organiques
• H01M 10/052 - Accumulateurs au lithium
• H01M 10/0568 - Matériaux liquides caracterisés par les solutés
• H01M 10/0569 - Matériaux liquides caracterisés par les solvants
• H01M 4/36 - Emploi de substances spécifiées comme matériaux actifs, masses actives, liquides actifs
• H01M 4/587 - Matériau carboné, p. ex. composés au graphite d'intercalation ou CFx pour insérer ou intercaler des métaux légers

Abrégé

A housing used for electronic devices includes a structural frame element formed of a metal matrix composite (MMC) for providing improved stiffness over other materials currency in use. The MMC is a metal matrix (formed of a material such as aluminum), with a reinforcing material (such as a glass fiber or ceramic) dispersed within the metal matrix. The composition of the reinforcing material, as well as the ratio of reinforcing material to metal, define the stiffness (resistance to bending) and/or strength (resistance to breaking) achieved, and various compositions may be used for different housings, depending on the use of the electronic device. The element may be configured as a structural frame member, or may be embedded within another material forming the structural frame element. In another embodiment, the MMC may be used to form various components of the complete housing, including the enclosure itself.

Classes IPC  ?

• H04M 1/02 - Caractéristiques de structure des appareils téléphoniques

Abrégé

A housing used for electronic devices includes a structural frame element formed of a metal matrix composite (MMC) for providing improved stiffness over other materials currency in use. The MMC is a metal matrix (formed of a material such as aluminum), with a reinforcing material (such as a glass fiber or ceramic) dispersed within the metal matrix. The composition of the reinforcing material, as well as the ratio of reinforcing material to metal, define the stiffness (resistance to bending) and/or strength (resistance to breaking) achieved, and various compositions may be used for different housings, depending on the use of ihe electronic device. The element may be configured as a structural frame member, or may be embedded within another material forming the stnictural frame element. In another embodiment, the MMC may be used to form various components of the complete housing, including the enclosure itself.

Classes IPC  ?

• H05K 5/00 - Enveloppes, coffrets ou tiroirs pour appareils électriques
• H05K 7/20 - Modifications en vue de faciliter la réfrigération, l'aération ou le chauffage

Abrégé

In a method of forming a diamond film, substrate, or window, a silicon substrate is provided and the diamond film, substrate, or window is CVD grown on a surface of the silicon substrate. The grown diamond film, substrate, or window has an aspect ratio > 100, wherein the aspect ratio is a ratio of a largest dimension of the diamond film, substrate or window divided by a thickness of the diamond film. The silicon substrate can optionally be removed or separated from the grown diamond film, substrate, or window.

Classes IPC  ?

• C23C 16/27 - Le diamant uniquement
• C23C 16/56 - Post-traitement
• C23C 16/453 - Revêtement chimique par décomposition de composés gazeux, ne laissant pas de produits de réaction du matériau de la surface dans le revêtement, c.-à-d. procédés de dépôt chimique en phase vapeur [CVD] caractérisé par le procédé de revêtement en faisant passer les gaz de réaction à travers des brûleurs ou des torches, p. ex. CVD sous pression atmosphérique
• C23C 16/455 - Revêtement chimique par décomposition de composés gazeux, ne laissant pas de produits de réaction du matériau de la surface dans le revêtement, c.-à-d. procédés de dépôt chimique en phase vapeur [CVD] caractérisé par le procédé de revêtement caractérisé par le procédé utilisé pour introduire des gaz dans la chambre de réaction ou pour modifier les écoulements de gaz dans la chambre de réaction

Abrégé

Optical modules as used in various types of communication systems are formed to include a flexible substrate to support various optical, electronic, and opto-electronic module components in a manner that can accommodate various packaging constraints. The flexible substrate is formed of a polyimide film is known to exhibit excellent electrical isolation properties, even though the films are generally relatively thin (on the order of 10-100 μηΐ5, in most cases). The flexible polyimide film is sized to accommodate the constraints of a given package "footprint"; more particularly, sized to fit an open 'floor area' within package, allowing for a populated film to be placed around various other "fixed-in-place" elements. The polyimide film is easily cut and trimmed to exhibit whatever topology is convenient, while providing enough surface area to support the affixed components and associated optical fiber traces.

Classes IPC  ?

• G02B 6/35 - Moyens de couplage optique comportant des moyens de commutation
• G02B 6/30 - Moyens de couplage optique pour usage entre fibre et dispositif à couche mince
• G03B 1/10 - Traction exercée par bobine réceptrice tournant sous l'action d'un bouton à engrenage

Abrégé

A fiber-based optical amplifier is assembled in a compact configuration by utilizing a flexible substrate to support the amplifying fiber as flat coils that are "spun" onto the substrate. The supporting structure for the amplifying fiber is configured to define the minimal acceptable bend radius for the fiber, as well as the maximum diameter that fits within the overall dimensions of the amplifier package. A pressure-sensitive adhesive coating is applied to the flexible substrate to hold the fiber in place. By using a flexible material with an acceptable insulative quality (such as a polyimide), further compactness in the final assembly is achieved by 1 ocating the electronics in a space underneath the fiber enclosure.

Classes IPC  ?

• G02B 6/06 - Guides de lumièreDétails de structure de dispositions comprenant des guides de lumière et d'autres éléments optiques, p. ex. des moyens de couplage formés par des faisceaux de fibres la position relative des fibres étant la même aux deux extrémités, p. ex. pour transporter des images
• G02B 6/14 - Convertisseurs de mode
• G02B 6/46 - Procédés ou appareils adaptés à l'installation de fibres optiques ou de câbles optiques

Abrégé

An optical amplifier module is configured as a multi-stage free-space optics arrangement, including at least an input stage and an output stage. The actual amplification is provided by a separate fiber-based component coupled to the module. A propagating optical input signal and pump light are provided to the input stage, with the amplified optical signal exiting the output stage. The necessary operations performed on the signal within each stage are provided by directing free- space beams through discrete optical components. The utilization of discrete optical components and free-space beams significantly reduces the number of fiber splices and other types of coupling connections required in prior art amplifier modules, allowing for an automated process to create a "pluggable" optical amplifier module of small form factor proportions.

Classes IPC  ?

• G02F 1/39 - Optique non linéaire pour la génération ou l'amplification paramétrique de la lumière, des infrarouges ou des ultraviolets
• G02F 1/383 - Optique non linéaire pour la génération de l'harmonique deux dans une structure de guide d'ondes optique du type fibre optique

Abrégé

A densely -spaced single-emitter laser diode configuration is created by using a laser bar (or similar array configuration) attached to a submount component of a size sufficient to adequately support the enter laser structure. The surface of the submount component upon which the laser structure is attached is metallized and used to form the individual electrical contacts to the laser diodes within the integrated laser structure. Once attached to each other, the laser structure is singulated by creating vertical separations between adjacent light emission areas. The submount metallization is similarly segmented, creating separate electrodes that are used to individually energize their associated laser diodes.

Classes IPC  ?

• H01S 3/04 - Dispositions pour la gestion thermique
• H01S 5/42 - Réseaux de lasers à émission de surface
• H01S 5/343 - Structure ou forme de la région activeMatériaux pour la région active comprenant des structures à puits quantiques ou à superréseaux, p. ex. lasers à puits quantique unique [SQW], lasers à plusieurs puits quantiques [MQW] ou lasers à hétérostructure de confinement séparée ayant un indice progressif [GRINSCH] dans des composés AIIIBV, p. ex. laser AlGaAs

Abrégé

A composite substrate includes a submount substrate of an alternating pattern of electrically insulative portions, pieces, layers or segments and electrically conductive portions, pieces, layers or segments, and a shaft, back or plate for supporting the alternating pattern of electrically insulative portions and electrically conductive portions. An active device having a P-N junction can be mounted on the submount substrate. The electrically insulative portions, pieces, layers or segments can be formed from diamond while the electrically conductive portions, pieces, layers or segments can be formed from a metal or metal alloy.

Classes IPC  ?

• H01L 21/3213 - Gravure physique ou chimique des couches, p. ex. pour produire une couche avec une configuration donnée à partir d'une couche étendue déposée au préalable

Abrégé

In a system and method of growing a diamond film, a cooling gas flows between a substrate and a substrate holder of a plasma chamber and a process gas flows into the plasma chamber. In the presence of an plasma in the plasma chamber, a temperature distribution across the top surface of the substrate and/or across a growth surface of the growing diamond film is controlled whereupon, during diamond film growth, the temperature distribution is controlled to have a predetermined temperature difference between a highest temperature and a lowest temperature of the temperature distribution. The as-grown diamond film has a total thickness variation (TTV) < 10%, < 5%, or < 1%; and/or a birefringence between 0 and 100 nm/cm, 0 and 80 nm/cm, 0 and 60 nm/cm, 0 and 40 nm/cm, 0 and 20 nm/cm, 0 and 10 nm/cm, or 0 and 5 nm/cm.

Classes IPC  ?

• C23C 16/27 - Le diamant uniquement
• C23C 16/44 - Revêtement chimique par décomposition de composés gazeux, ne laissant pas de produits de réaction du matériau de la surface dans le revêtement, c.-à-d. procédés de dépôt chimique en phase vapeur [CVD] caractérisé par le procédé de revêtement
• C23C 16/50 - Revêtement chimique par décomposition de composés gazeux, ne laissant pas de produits de réaction du matériau de la surface dans le revêtement, c.-à-d. procédés de dépôt chimique en phase vapeur [CVD] caractérisé par le procédé de revêtement au moyen de décharges électriques
• C23C 16/511 - Revêtement chimique par décomposition de composés gazeux, ne laissant pas de produits de réaction du matériau de la surface dans le revêtement, c.-à-d. procédés de dépôt chimique en phase vapeur [CVD] caractérisé par le procédé de revêtement au moyen de décharges électriques utilisant des décharges à micro-ondes
• C23C 16/513 - Revêtement chimique par décomposition de composés gazeux, ne laissant pas de produits de réaction du matériau de la surface dans le revêtement, c.-à-d. procédés de dépôt chimique en phase vapeur [CVD] caractérisé par le procédé de revêtement au moyen de décharges électriques utilisant des jets de plasma
• C23C 16/56 - Post-traitement

Abrégé

In a method of chemical vapor deposition (CVD) growth of a polycrystalline diamond film in a CVD reactor, a gas mixture of gaseous hydrogen and a gaseous hydrocarbon is introduced into the CVD reactor. A plasma formed from the gas mixture is maintained above a surface of a conductive substrate disposed in the CVD reactor and causes a polycrystalline diamond film to grow on the surface of the conductive substrate. A temperature T at the center of the polycrystalline diamond film is controlled during growth of the polycrystalline diamond film. The CVD grown polycrystalline diamond film includes diamond crystallites that can have a percentage of orientation along a [110] diamond lattice direction > 70% of the total number of diamond crystallites forming the polycrystalline diamond film.

Classes IPC  ?

• C01B 31/06 - Diamant
• C23C 16/27 - Le diamant uniquement
• B23B 27/20 - Outils de coupe sur lesquels les taillants ou éléments tranchants sont en matériaux particulier à éléments tranchants constitués par des diamants
• B23B 51/00 - Outils pour machines à percer
• B23C 5/16 - Outils de fraisage caractérisés par des particularités physiques autres que la forme

Abrégé

An arrangement for providing real-time, in-service OTDR measurements in an optical communication system utilizing distributed Raman amplification. One or more of the laser diodes used to provide the pump light necessary to create optical gain is modified to also generate short duration pulses that ride above or below the conventional pump light. These short duration pulses (which co- exist with the pump light within the optical fiber) are used in performing OTDR measurements, with a conventional processing system used to evaluate reflected pulses and create the actual OTDR measurements.

Classes IPC  ?

• H04B 10/071 - Dispositions pour la surveillance ou le test de systèmes de transmissionDispositions pour la mesure des défauts de systèmes de transmission utilisant un signal réfléchi, p. ex. utilisant des réflectomètres optiques temporels [OTDR]
• H04B 10/25 - Dispositions spécifiques à la transmission par fibres

Abrégé

A multilayer substrate includes a diamond layer CVD grown on a composite layer. The composite layer includes particles of diamond and silicon carbide and, optionally, silicon. A loading level (by volume) of diamond in the composite layer can be ≥ 5 %; ≥ 20 %; ≥ 40 %; or ≥ 60 %. The multilayer substrate can be used as an optical device; a detector for detecting radiation particles or electromagnetic waves; a device for cutting, drilling, machining, milling, lapping, polishing, coating, bonding, or brazing; a braking device; a seal; a heat conductor; an electromagnetic wave conductor; a chemically inert device for use in a corrosive environment, a strong oxidizing environment, or a strong reducing environment, at an elevated temperature, or under a cryogenic condition; or a device for polishing or planarization of other devices, wafers or films.

Classes IPC  ?

• C04B 41/87 - Céramiques
• C04B 35/52 - Produits céramiques mis en forme, caractérisés par leur compositionCompositions céramiquesTraitement de poudres de composés inorganiques préalablement à la fabrication de produits céramiques à base de non oxydes à base de carbone, p. ex. graphite
• C04B 38/00 - Mortiers, béton, pierre artificielle ou articles de céramiques poreuxLeur préparation
• C09K 3/14 - Substances antidérapantesAbrasifs

Abrégé

In a method of forming polycrystalline SiC grain material, low-density, gas-permeable and vapor-permeable bulk carbon is positioned at a first location inside of a graphite crucible and a mixture of elemental silicon and elemental carbon is positioned at a second location. The mixture and the bulk carbon are heated to a first temperature below the melting point of the elemental Si to remove adsorbed gas, moisture and/or volatiles from the mixture and the bulk carbon. The mixture and bulk carbon are then heated to a second temperature that causes the elemental Si and the elemental C to react forming as-synthesized SiC inside of the crucible. The as-synthesized SiC and the bulk carbon are then heated in a way to cause the as-synthesized SiC to sublime and produce vapors that migrate into, condense on and react with the bulk carbon forming polycrystalline SiC material.

Classes IPC  ?

• C30B 28/12 - Production de matériaux polycristallins homogènes de structure déterminée directement à partir de l'état gazeux
• C30B 29/36 - Carbures

Abrégé

A sublimation grown SiC single crystal includes vanadium dopant incorporated into the SiC single crystal structure via introduction of a gaseous vanadium compound into a growth environment of the SiC single crystal during growth of the SiC single crystal.

Classes IPC  ?

• C30B 23/06 - Chauffage de l'enceinte de dépôt, du substrat ou du matériau à évaporer
• C30B 29/36 - Carbures

Abrégé

A fiber ribbon cable that includes a plurality of ribbon tubes arranged in a pattern, wherein one of the ribbon tubes contains an optical fiber and an adjacent ribbon tube contains an electric heating element such that when heated the electric heating element is able to adjust the temperature of the optical fiber.

Classes IPC  ?

• G02B 6/04 - Guides de lumièreDétails de structure de dispositions comprenant des guides de lumière et d'autres éléments optiques, p. ex. des moyens de couplage formés par des faisceaux de fibres

Abrégé

The invention relates to a beam combiner for a Raman pump unit. The beam combiner is configured to receive and propagate at least two orthogonally polarised collimated light beams. The beam combiner comprises a birefringent prism and an optically isotropic prism. Each of the prisms is located in the path of the beams and configured so that the beams are substantially parallel to each other when they emanate from the beam combiner.

Classes IPC  ?

• G02B 27/28 - Systèmes ou appareils optiques non prévus dans aucun des groupes , pour polariser
• G02B 6/27 - Moyens de couplage optique avec des moyens de sélection et de réglage de la polarisation

Abrégé

In a crystal growth apparatus and method, polycrystalline source material and a seed crystal are introduced into a growth ambient comprised of a growth crucible disposed inside of a furnace chamber. In the presence of a first sublimation growth pressure, a single crystal is sublimation grown on the seed crystal via precipitation of sublimated source material on the seed crystal in the presence of a flow of a first gas that includes a reactive component that reacts with and removes donor and/or acceptor background impurities from the growth ambient during said sublimation growth. Then, in the presence of a second sublimation growth pressure, the single crystal is sublimation grown on the seed crystal via precipitation of sublimated source material on the seed crystal in the presence of a flow of a second gas that includes dopant vapors, but which does not include the reactive component.

Classes IPC  ?

• C30B 23/02 - Croissance d'une couche épitaxiale
• C30B 29/36 - Carbures

Abrégé

A method and system of forming large-diameter SiC single crystals suitable for fabricating high crystal quality SiC substrates of 100, 125, 150 and 200 mm in diameter are described. The SiC single crystals are grown by a seeded sublimation technique in the presence of a shallow radial temperature gradient. During SiC sublimation growth, a flux of SiC bearing vapors filtered from carbon particulates is substantially restricted to a central area of the surface of the seed crystal by a separation plate disposed between the seed crystal and a source of the SiC bearing vapors. The separation plate includes a first, substantially vapor-permeable part surrounded by a second, substantially non vapor-permeable part. The grown crystals have a flat or slightly convex growth interface. Large-diameter SiC wafers fabricated from the grown crystals exhibit low lattice curvature and low densities of crystal defects, such as stacking faults, inclusions, micropipes and dislocations.

Classes IPC  ?

• C30B 11/14 - Croissance des monocristaux par simple solidification ou dans un gradient de température, p. ex. méthode de Bridgman-Stockbarger caractérisée par le germe, p. ex. par son orientation cristallographique

Abrégé

In SiC sublimation crystal growth, a crucible is charged with SiC source material and SiC seed crystal in spaced relation and a baffle is disposed in the growth crucible around the seed crystal. A first side of the baffle in the growth crucible defines a growth zone where a SiC single crystal grows on the SiC seed crystal. A second side of the baffle in the growth crucible defines a vapor-capture trap around the SiC seed crystal. The growth crucible is heated to a SiC growth temperature whereupon the SiC source material sublimates and forms a vapor which is transported to the growth zone where the SiC crystal grows by precipitation of the vapor on the SiC seed crystal. A fraction of this vapor enters the vapor-capture trap where it is removed from the growth zone during growth of the SiC crystal.

Classes IPC  ?

• C01B 31/36 - Carbures de silicium ou de bore
• B01D 9/00 - Cristallisation

Abrégé

A physical vapor transport growth system includes a growth chamber charged with SiC source material and a SiC seed crystal in spaced relation and an envelope that is at least partially gas-permeable disposed in the growth chamber. The envelope separates the growth chamber into a source compartment that includes the SiC source material and a crystallization compartment that includes the SiC seed crystal. The envelope is formed of a material that is reactive to vapor generated during sublimation growth of a SiC single crystal on the SiC seed crystal in the crystallization compartment to produce C-bearing vapor that acts as an additional source of C during the growth of the SiC single crystal on the SiC seed crystal.

Classes IPC  ?

• C30B 23/00 - Croissance des monocristaux par condensation d'un matériau évaporé ou sublimé

Abrégé

A crucible has a first resistance heater is disposed in spaced relation above the top of the crucible and a second resistance heater with a first resistive section disposed in spaced relation beneath the bottom of the crucible and with a second resistive section disposed in spaced relation around the outside of the side of the crucible. The crucible is charged with a seed crystal at the top of an interior of the crucible and a source material in the interior of the crucible in spaced relation between the seed crystal and the bottom of the crucible. Electrical power of a sufficient extent is applied to the first and second resistance heaters to create in the interior of the crucible a temperature gradient of sufficient temperature to cause the source material to sublimate and condense on the seed crystal thereby forming a growing crystal.

Classes IPC  ?

• C30B 15/14 - Chauffage du bain fondu ou du matériau cristallisé
• C30B 15/10 - Creusets ou récipients pour soutenir le bain fondu
• C30B 29/06 - Silicium

Abrégé

In a method of annealing a Cd1-xZnxTe sample/wafer, surface contamination is removed from the sample/wafer and the sample/wafer is then introduced into a chamber. The chamber is evacuated and Hydrogen or Deuterium gas is introduced into the evacuated chamber. The sample/wafer is heated to a suitable annealing temperature in the presence of the Hydrogen or Deuterium gas for a predetermined period of time.

Classes IPC  ?

• C30B 15/04 - Croissance des monocristaux par tirage hors d'un bain fondu, p. ex. méthode de Czochralski en introduisant dans le matériau fondu le matériau à cristalliser ou les réactifs le formant in situ avec addition d'un matériau de dopage, p. ex. pour une jonction n–p
• C30B 11/00 - Croissance des monocristaux par simple solidification ou dans un gradient de température, p. ex. méthode de Bridgman-Stockbarger

Abrégé

A SiC single crystal is grown by physical vapor transport (PVT) in a graphite growth chamber (6), the interior of which is charged with a SiC source material (3) and a SiC single crystal seed (4) in spaced relation. During PVT growth of the SiC single crystal (5), the growth chamber further includes Ce. The SiC single crystal (5) grows on the SiC single crystal seed (4) in response to heating the interior of the growth chamber to a growth temperature and in the presence of a temperature gradient in the growth chamber whereupon the temperature of the SiC single crystal seed (4) is lower than the temperature of the SiC source material. The Ce can include either Ce silicide or Ce carbide.

Classes IPC  ?

• C30B 25/02 - Croissance d'une couche épitaxiale
• C30B 29/36 - Carbures

Abrégé

A method of fabricating an SiC single crystal includes (a) physical vapor transport (PVT) growing a SiC single crystal on a seed crystal in the presence of a temperature gradient, wherein an early-to-grow portion of the SiC single crystal is at a lower temperature than a later-to-grow portion of the SiC single crystal. Once grown, the SiC single crystal is annealed in the presence of a reverse temperature gradient, wherein the later-to-grow portion of the SiC single crystal is at a lower temperature than the early-to-grow portion of the SiC single crystal.

Classes IPC  ?

• C30B 23/00 - Croissance des monocristaux par condensation d'un matériau évaporé ou sublimé

Abrégé

In the growth of a SiC boule, a growth guide is provided inside of a growth crucible that is charged with SiC source material at a bottom of the crucible and a SiC seed crystal at a top of the crucible. The growth guide has an inner layer that defines at least part of an opening in the growth guide and an outer layer that supports the inner layer in the crucible. The opening faces the source material with the seed crystal positioned at an end of the opening opposite the source material. The inner layer is formed from a first material having a higher thermal conductivity than the second, different material forming the outer layer. The source material is sublimation grown on the seed crystal in the growth crucible via the opening in the growth guide to thereby form the SiC boule on the seed crystal.

Classes IPC  ?

• C30B 29/36 - Carbures
• C30B 35/00 - Appareillages non prévus ailleurs, spécialement adaptés à la croissance, à la production ou au post-traitement de monocristaux ou de matériaux polycristallins homogènes de structure déterminée
• C30B 23/00 - Croissance des monocristaux par condensation d'un matériau évaporé ou sublimé

Produits et services

Semiconductor substrates and wafers.

Abrégé

Adsorbed gaseous species and elements in a carbon (C) powder and a graphite crucible are reduced by way of a vacuum and an elevated temperature sufficient to cause reduction. A wall and at least one end of an interior of the crucible is lined with C powder purified in the above manner. An Si + C mixture is formed with C powder purified in the above manner and Si powder or granules. The lined crucible is charged with the Si + C mixture. Adsorbed gaseous species and elements are reduced from the Si + C mixture and the crucible by way of a vacuum and an elevated temperature that is sufficient to cause reduction but which does not exceed the melting point of Si. Thereafter, by way of a vacuum and an elevated temperature, the Si + C mixture is caused to react and form polycrystalline SiC.

Classes IPC  ?

• C30B 15/00 - Croissance des monocristaux par tirage hors d'un bain fondu, p. ex. méthode de Czochralski
• C30B 21/06 - Solidification unidirectionnelle des matériaux eutectiques par tirage à partir d'un bain fondu

Abrégé

A semiconductor radiation detector (1', 1'', 1''', 1'') includes a body of semiconducting material (2) responsive to ionizing radiation for generating electron-hole pairs in the bulk of said body (2). A conductive cathode (4) is disposed on one side of the body (2) and an anode structure (6) is disposed on the other side of the body (2). The anode structure (6) includes a first set of spaced elongated conductive fingers (8) in contact with the body (2) and defining between each pair of fingers thereof an elongated gap (10) and a second set of spaced elongated conductive fingers (12) positioned above the surface of the body (2) that includes spaced elongated conductive fingers (8). Each finger of the second set of spaced elongated conductive fingers (12) overlays, either partially or wholly, the elongated gap between a pair of adjacent fingers of the first set of spaced elongated conductive fingers (8).

Classes IPC  ?

• G01T 1/00 - Mesure des rayons X, des rayons gamma, des radiations corpusculaires ou des radiations cosmiques
• H01L 25/04 - Ensembles consistant en une pluralité de dispositifs à semi-conducteurs ou d'autres dispositifs à l'état solide les dispositifs étant tous d'un type prévu dans une seule des sous-classes , , , , ou , p. ex. ensembles de diodes redresseuses les dispositifs n'ayant pas de conteneurs séparés

Abrégé

In a crystal growth method, a seed crystal 8 and a source material 4 are provided in spaced relation inside of a growth crucible 6. Starting conditions for the growth of a crystal 14 in the growth crucible 6 are then established therein. The starting conditions include: a suitable gas inside the growth crucible 6, a suitable pressure of the gas inside the growth crucible 6, and a suitable temperature in the growth crucible 6 that causes the source material 4 to sublimate and be transported via a temperature gradient in the growth crucible 6 to the seed crystal 8 where the sublimated source material precipitates. During growth of the crystal 14 inside the growth crucible 6, at least one of the following growth conditions are intermittently changed inside the growth crucible 6 a plurality of times: the gas in the growth crucible 6, the pressure of the gas in the growth crucible 6, and the temperature in the growth crucible 6.

Classes IPC  ?

• C30B 23/00 - Croissance des monocristaux par condensation d'un matériau évaporé ou sublimé

Abrégé

A radiation detection and counting system (2) includes a radiation detector element (5) for outputting a signal related to an energy of a radiation event received thereby and an amplifier (8) for amplifying the signal output by the detector element (5). A gain equalization circuit (10) adjusts the gain of the amplified output signal and a plurality of comparators (12) compare the gain adjusted amplified output signal to a like plurality of different valued threshold signals that are independently adjustable of each other. A plurality of counters (20) is operative whereupon only the counter associated with the one comparator (12) that changes state in response to the peak of the gain adjusted amplified output signal exceeding the value of the trigger threshold signal thereof is incremented. A storage (24) stores the incremented value of each counter (20) accumulated over a sample time interval and data output logic circuit (26) transfers the stored accumulated counts out of the storage.

Classes IPC  ?

• H01J 43/30 - Circuits non adaptés à une application particulière du tube et non prévus ailleurs
• H01J 31/50 - Tubes convertisseurs d'image ou amplificateurs d'image, c.-à-d. comprenant un signal d'entrée optique, à rayons X ou analogue, et un signal de sortie optique
• H03K 17/78 - Commutation ou ouverture de porte électronique, c.-à-d. par d'autres moyens que la fermeture et l'ouverture de contacts caractérisée par l'utilisation de composants spécifiés par l'utilisation, comme éléments actifs, de dispositifs opto-électroniques, c.-à-d. des dispositifs émetteurs de lumière et des dispositifs photo-électriques couplés électriquement ou optiquement
• G01R 19/00 - Dispositions pour procéder aux mesures de courant ou de tension ou pour en indiquer l'existence ou le signe
• H03K 5/19 - Contrôle de la configuration de trains d'impulsions

Abrégé

In operation of a photon counting detecting system (10), a number of pulse counts output by least one pixel (20) of a photon counting detector in response to experiencing a photon flux density during a sample interval is acquired and a photon flux density (46) or value related thereto corresponding to the pulse counts output by the pixel (20) is determined. A correction (48) for the thus determined photon flux density (46) or value related thereto is determined. A corrected number of pulse counts (52) is determined for the pixel (20) as a function of the thus determined corrected photon flux density value or value related thereto. An image can be displayed that is a function of the corrected number of pulse counts for pixels of the system.

Classes IPC  ?

• G01T 1/24 - Mesure de l'intensité de radiation avec des détecteurs à semi-conducteurs

Abrégé

In method of crystal growth, an interior of a crystal growth chamber (2) is heated to a first temperature in the presence of a first vacuum pressure whereupon at least one gas absorbed in a material (4) disposed inside the chamber is degassed therefrom. The interior of the chamber is then exposed to an inert gas at a second, higher temperature in the presence of a second vacuum pressure that is at a higher pressure than the first vacuum pressure. The inert gas pressure in the chamber is then reduced to a third vacuum pressure that is between the first and second vacuum pressures and the temperature inside the chamber is lowered to a third temperature that is between the first and second temperatures, whereupon source material (10) inside the chamber vaporizes and deposits on a seed crystal (12) inside the chamber.

Classes IPC  ?

• C30B 25/12 - Porte-substrat ou supports
• C30B 25/00 - Croissance des monocristaux par réaction chimique de gaz réactifs, p. ex. croissance par dépôt chimique en phase vapeur
• C30B 25/08 - Enceintes de réactionEmploi d'un matériau spécifié à cet effet
• C30B 29/36 - Carbures
• C23C 16/44 - Revêtement chimique par décomposition de composés gazeux, ne laissant pas de produits de réaction du matériau de la surface dans le revêtement, c.-à-d. procédés de dépôt chimique en phase vapeur [CVD] caractérisé par le procédé de revêtement
• H01L 21/205 - Dépôt de matériaux semi-conducteurs sur un substrat, p. ex. croissance épitaxiale en utilisant la réduction ou la décomposition d'un composé gazeux donnant un condensat solide, c.-à-d. un dépôt chimique