An article including a ceramic material and featuring a machined surface that is characteristic of cold ablation laser machining, wherein the machined surface exhibits no visible oxidation. A laser machining apparatus and technique based on cold-ablation, but modified or augmented with an inert assist gas, which minimizes the deleterious surface modifications and mitigates the oxide formation associated with laser machining.
B23K 26/12 - Working by laser beam, e.g. welding, cutting or boring in a special environment or atmosphere, e.g. in an enclosure
B23K 26/14 - Working by laser beam, e.g. welding, cutting or boring using a fluid stream, e.g. a jet of gas, in conjunction with the laser beamNozzles therefor
A laser texturing process modifies the surface of a semiconductor wafer-handling device so that flatness is maintained, but controlled roughness is imparted to prevent unwanted wafer sticking. The laser texturing may be from a thermal laser, a cold ablation laser, or either laser modified with an inert cover gas. The laser etches or burns away a portion or fraction of a flat surface, thereby reducing the area of contact to the semiconductor wafer and thereby reducing friction and sticking. The etched or burned-away portion is thus at a reduced, relieved or lower elevation than the unaffected portion. The laser texturing may take the form of a plurality of channels cut into the surface, or a plurality of holes. Laser machining can yield a semiconductor wafer handling device having finer detail than can be produced by other shaping techniques, with feature sizes on the order of 50 microns being achievable.
An optical network element for a hardware configured optical network includes a first optical port that receives an input optical signal comprising receive control information from the hardware configured optical network. A demodulator optically coupled to the first optical port decodes the receive control information for configuring the optical network element. A modulator having an electrical modulation input that receives transmit control information imparts a modulation onto an optical carrier thereby generating a transmit optical control signal representing the transmit control information. A second optical port transmits the transmit optical control signal representing the transmit control information to the hardware configured optical network.
H04J 14/02 - Wavelength-division multiplex systems
H04B 10/077 - Arrangements for monitoring or testing transmission systemsArrangements for fault measurement of transmission systems using an in-service signal using a supervisory or additional signal
A system comprises a thermoelectric device, and a baseplate coupled to a first side of the thermoelectric device. The system also comprises a band coupled to the baseplate and a container. The band may be adjustable in a circumference and configured to thermally couple the baseplate and the container.
H01L 35/02 - SEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR - Details thereof - Details
H01L 35/28 - SEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR - Details thereof operating with Peltier or Seebeck effect only
5.
METHODS FOR MASKING A PIN CHUCK, AND ARTICLES MADE THEREBY
A method for selectively coating the tops of pins of a pin chuck with a high thermal stability material, such as diamond-like carbon (DLC). Non-pin areas ("valleys") of the pin chuck support surface are temporarily covered with glass frit or glass beads during the DLC coating operation. After coating, the glass frit/beads masking material may be removed, leaving the DLC material selectively coating the pin tops. The selective DLC coating avoids the cracking or warping problems due to CTE mismatch when DLC is coated over the entire pin chuck support surface, as the pin chuck material typically is very different from DLC.
H01L 21/687 - Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereofApparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches
A plasmon-based optical modulator comprises a substrate, a layer of high reflectivity material disposed over the substrate, a relatively thin dielectric layer disposed over a top major surface of the layer of high reflectivity material and a plurality of graphene strips disposed in parallel across a top major surface of the relatively thin dielectric layer, each graphene strip exhibiting a predetermined width w, with adjacent strips separated by a predetermined spacing s. A first electrical contact is coupled to the plurality of graphene strips and a second electrical contact is coupled to the layer of high reflectivity material, where the values of w, s, and voltage applied between the first and second electrical contacts determines a resonant wavelength of the plasmon-based optical modulator, with changes in the applied voltage changing between absorption and non-absorption of an applied optical input signal.
G02F 1/01 - Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulatingNon-linear optics for the control of the intensity, phase, polarisation or colour
7.
COMPACT LASER SOURCE WITH WAVELENGTH STABILIZED OUTPUT
A compact, wavelength-stabilized laser source is provided by utilizing a specialty gain element (i.e., formed to include a curved waveguide topology), where a separate wavelength stabilization component (for example, a fiber Bragg grating (FBG)) is used one of the mirrors for the laser cavity. That is, the FBG takes the place of the physical "front facet" of the gain element, and functions to define the laser cavity in the first instance, while also utilizing the grating structure to impart the desired wavelength stability to the output from the packaged laser source. As a result, the FBG is disposed within the same package used to house the gain element and provides a wavelength-stabilized laser source in a compact form.
A chemical-mechanical polishing/planarization pad conditioner body made from diamond-reinforced reaction bonded silicon carbide, with diamond particles protruding or "standing proud" of the rest of the surface, and uniformly distributed on the cutting surface. In one embodiment, the diamond particles are approximately uniformly distributed throughout the composite, but in other embodiments they are preferentially located at and near the conditioning surface. The tops of the diamond particles can be engineered to be at a constant elevation (i.e., the conditioner body can be engineered to be very flat). Exemplary shapes of the body may be disc or toroidal. The diamond particles can be made to protrude from the conditioning surface by preferentially eroding the Si/SiC matrix. The eroding may be accomplished by electrical discharge machining or by lapping/polishing with abrasive.
INSTITUTE OF CHEMISTRY, CHINESE ACADEMY OF SCIENCES (China)
II-VI INCORPORATED (USA)
Inventor
Eissler, Elgin E.
Xu, Wen-Qing
Li, Xiaoming
Zhang, Yancheng
Patkar, Shailesh
Barbarossa, Giovanni
Guo, Yu-Guo
Zhang, Shuaifeng
Yin, Yaxia
Abstract
An immobilized selenium body, made from carbon and selenium and optionally sulfur, makes selenium more stable, requiring a higher temperature or an increase in kinetic energy for selenium to escape from the immobilized selenium body and enter a gas system, as compared to selenium alone. Immobilized selenium localized in a carbon skeleton can be utilized in a rechargeable battery. Immobilization of the selenium can impart compression stress on both the carbon skeleton and the selenium. Such compression stress enhances the electrical conductivity in the carbon skeleton and among the selenium particles and creates an interface for electrons to be delivered and or harvested in use of the battery. A rechargeable battery made from immobilized selenium can be charged or discharged at a faster rate over conventional batteries and can demonstrate excellent cycling stability.
INSTITUTE OF CHEMISTRY, CHINESE ACADEMY OF SCIENCES (China)
Inventor
Eissler, Elgin E.
Xu, Wen-Qing
Li, Xiaoming
Zhang, Yancheng
Patkar, Shailesh
Barbarossa, Giovanni
Guo, Yu-Guo
Zhang, Shuaifeng
Yin, Yaxia
Abstract
An immobilized selenium body, made from carbon and selenium and optionally sulfur, makes selenium more stable, requiring a higher temperature or an increase in kinetic energy for selenium to escape from the imrnobilized selenium body and enter a gas system, as compared to selenium alone. Immobilized selenium localized in a carbon skeleton can be utilized in a rechargeable battery. hnmobilization of the seleni-um can impart compression stress on both the carbon skeleton and the selenium. Such compression stress en-hances the electrical conductivity in the carbon skeleton and among the selenium particles and creates an inter-face for electrons to be delivered and or harvested in use of the battery. A rechargeable battery made from immobilized selenium can be charged or discharged at a faster rate over conventional batteries and can demon-strate excellent cycling stability.WO 2017/143021 Al I 11 111 11111111 1111111110 fill 11111111 11111 0111 MO 0111 Mill 11 1111 1111111 MI HEIMRU, RW, SA, SC, SD, SE, SG, SK, SL, SM, ST, SV, SY, SI, SK, SM, TR), OAPI (BF, BI, CF, CG, CI, CM, GA,TH, TJ, TM, TN, TR, TT, TZ, UA, UG, US, UZ, VC, GN, GQ, GW, KM, ML, MR, NE, SN, TD, TG).VN, ZA, ZM, ZW.Declarations under Rule 4.17:(84) Designated States (unless otherwise indicated, for every _as to the applicant's entitlement to claim the priority ofkind of regional protection available): ARIPO (BW, GH, the earlier application (Rule 4.17(110) GM, KE, LR, LS, MW, MZ, NA, RW, SD, SL, ST, SZ,TZ, UG, ZM, ZW), Eurasian (AM, AZ, BY, KG, KZ, RU, Published:TJ, TM), European (AL, AT, BE, BG, CH, CY, CZ, DE, _with international search report (Art. 21(3))DK, EE, ES, FI, FR, GB, GR, HR, HU, IE, IS, IT, LT,LU, LV, MC, MK, MT, NL, NO, PL, PT, RO, RS, SE,Date Recue/Date Received 2023-03-28
C04B 35/52 - Shaped ceramic products characterised by their compositionCeramic compositionsProcessing powders of inorganic compounds preparatory to the manufacturing of ceramic products based on non-oxides based on carbon, e.g. graphite
C04B 41/85 - Coating or impregnating with inorganic materials
H01M 4/133 - Electrodes based on carbonaceous material, e.g. graphite-intercalation compounds or CFx
H01M 4/1393 - Processes of manufacture of electrodes based on carbonaceous material, e.g. graphite-intercalation compounds or CFx
H01M 10/05 - Accumulators with non-aqueous electrolyte
11.
IMMOBILIZED SELENIUM, A METHOD OF MAKING, AND USES OF IMMOBILIZED SELENIUM IN A RECHARGEABLE BATTERY
INSTITUTE OF CHEMISTRY, CHINESE ACADEMY OF SCIENCES (China)
Inventor
Eissler, Elgin E.
Xu, Wen-Qing
Li, Xiaoming
Zhang, Yancheng
Patkar, Shailesh
Barbarossa, Giovanni
Guo, Yu-Guo
Zhang, Shuaifeng
Yin, Yaxia
Abstract
An immobilized selenium body, made from carbon and selenium and optionally sulfur, makes selenium more stable, requiring a higher temperature or an increase in kinetic energy for selenium to escape from the immobilized selenium body and enter a gas system, as compared to selenium alone. Immobilized selenium localized in a carbon skeleton can be utilized in a rechargeable battery. Immobilization of the selenium can impart compression stress on both the carbon skeleton and the selenium. Such compression stress enhances the electrical conductivity in the carbon skeleton and among the selenium particles and creates an interface for electrons to be delivered and or harvested in use of the battery. A rechargeable battery made from immobilized selenium can be charged or discharged at a faster rate over conventional batteries and can demonstrate excellent cycling stability.
06 - Common metals and ores; objects made of metal
09 - Scientific and electric apparatus and instruments
Goods & Services
Armor for protecting the Body, buildings and other structures, aircraft, marine vessels, and vehicles against ballistic projectiles. Components manufactured from metal and ceramic Composite materials, for use in liquid Crystal Displays, optical devices, and thermal Management applications, and advanced machine design applications, namely, semiconductor capital Equipment, or the manufacture of semiconductor capital Equipment.
13.
COMPOSITE EXTRACTANT-ENHANCED POLYMER RESIN, METHOD OF MAKING THE SAME, AND ITS USAGE FOR EXTRACTION OF VALUABLE METAL(S)
A composite extractant-enhanced polymer resin comprising an extractant and a polymer resin for direct extraction of valuable metals such as rare earth metals, and more specifically, scandium, from an acid-leaching slurry and/or acid-leaching solution in which ferric ions are not required to be reduced into ferrous ions. The extractant may be cationic, non-ionic, or anionic. More specifically, the extractant di(2-ethylhexyl)phosphoric acid may be used. The polymer resin may be non-functional or have functional groups of sulfonic acid, carboxylic acid, iminodiacetic acid, phosphoric acid, or amines. The composite extractant-enhanced polymer resin may be used for extraction of rare earth metals from acid-leaching slurries or solutions.
INSTITUTE OF CHEMISTRY, CHINESE ACADEMY OF SCIENCES (China)
II-VI INCORPORATED (USA)
Inventor
Guo, Yu-Guo
Zhang, Shuaifeng
Yin, Yaxia
Abstract
Disclosed is method of preparing a selenium carbon composite material and a use of the selenium carbon composite material in a cathode of a lithium selenium secondary battery. A battery formed with a cathode of the disclosed selenium carbon composite material has high energy density and stable electrochemical performance. The disclosed selenium carbon composite material can effectively shorten the migration distance of lithium ions during charging and discharging of the battery and improve conductivity and utilization of selenium after compounding carbon and selenium. Multiple batteries formed with cathodes of the disclosed selenium carbon composite material can be assembled into a lithium selenium pouch-cell battery having stable electrochemical performance and high energy density.
C04B 35/528 - Shaped ceramic products characterised by their compositionCeramic compositionsProcessing powders of inorganic compounds preparatory to the manufacturing of ceramic products based on non-oxides based on carbon, e.g. graphite obtained from carbonaceous particles with or without other non-organic components
C04B 41/85 - Coating or impregnating with inorganic materials
H01M 4/133 - Electrodes based on carbonaceous material, e.g. graphite-intercalation compounds or CFx
H01M 4/1393 - Processes of manufacture of electrodes based on carbonaceous material, e.g. graphite-intercalation compounds or CFx
INSTITUTE OF CHEMISTRY, CHINESE ACADEMY OF SCIENCES (China)
Inventor
Guo, Yu-Guo
Zhang, Shuaifeng
Yin, Yaxia
Abstract
Disclosed is method of preparing a selenium carbon composite material and a use of the selenium carbon composite material in a cathode of a lithium selenium secondary battery. A battery formed with a cathode of the disclosed selenium carbon composite material has high energy density and stable electrochemical performance. The disclosed selenium carbon composite material can effectively shorten the migration distance of lithium ions during charging and discharging of the battery and improve conductivity and utilization of selenium after compounding carbon and selenium. Multiple batteries formed with cathodes of the disclosed selenium carbon composite material can be assembled into a lithium selenium pouch-cell battery having stable electrochemical performance and high energy density.
C04B 35/528 - Shaped ceramic products characterised by their compositionCeramic compositionsProcessing powders of inorganic compounds preparatory to the manufacturing of ceramic products based on non-oxides based on carbon, e.g. graphite obtained from carbonaceous particles with or without other non-organic components
C04B 41/85 - Coating or impregnating with inorganic materials
H01M 4/133 - Electrodes based on carbonaceous material, e.g. graphite-intercalation compounds or CFx
H01M 4/1393 - Processes of manufacture of electrodes based on carbonaceous material, e.g. graphite-intercalation compounds or CFx
INSTITUTE OF CHEMISTRY, CHINESE ACADEMY OF SCIENCES (China)
II-VI INCORPORATED (USA)
Inventor
Guo, Yu-Guo
Zhang, Shuaifeng
Yin, Yaxia
Abstract
Disclosed is method of preparing a selenium carbon composite material and a use of the selenium carbon composite material in a cathode of a lithium selenium secondary battery. A battery formed with a cathode of the disclosed selenium carbon composite material has high energy density and stable electrochemical performance. The disclosed selenium carbon composite material can effectively shorten the migration distance of lithium ions during charging and discharging of the battery and improve conductivity and utilization of selenium after compounding carbon and selenium. Multiple batteries formed with cathodes of the disclosed selenium carbon composite material can be assembled into a lithium selenium pouch-cell battery having stable electrochemical performance and high energy density.
C04B 35/528 - Shaped ceramic products characterised by their compositionCeramic compositionsProcessing powders of inorganic compounds preparatory to the manufacturing of ceramic products based on non-oxides based on carbon, e.g. graphite obtained from carbonaceous particles with or without other non-organic components
C04B 35/63 - Preparing or treating the powders individually or as batches using additives specially adapted for forming the products
A method for decontaminating support surfaces of a wafer chuck entails lightly passing a treatment tool having a nominally flat contacting surface over the regions of the chuck where contaminants are to be removed. The treatment tool and the chuck surface may have about the same hardness. The treatment tool may be constrained so that it may conform to the surface being processed. When the treatment tool is contacted to a flat surface, the area of contact may be in the form of a circle, ring or annulus. At application pressures, the treatment tool will abrade the chuck, which here is to be avoided, or at least minimized. Thus, the instant inventors have discovered that the same treatment tool that is used to engineer the elevation profile of the surface, and its roughness, at lower application pressures can be used to remove grinding debris and other contaminants from the surface.
Grinding, lapping and polishing basically work by making scratches in the body being ground, lapped or polished. The scratches typically are linear. The scratches gives rise to a directionality component of friction: the friction coefficient is less in the direction along the scratch than in a direction orthogonal, or across, the scratch. In a wafer handling/chucking situation, one wants the wafer to settle on the chuck, which involves the outer regions of the wafer moving radially with respect to the chuck. One can reduce friction in the radial direction by giving the lapping scratches a preferred orientation, namely, radial. This can be achieved by making the final passes of the lapping tool move predominantly in radial directions.
H01L 21/683 - Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereofApparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components for supporting or gripping
H01L 21/687 - Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereofApparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches
19.
MACHINE FOR FINISHING A WORK PIECE, AND HAVING A HIGHLY CONTROLLABLE TREATMENT TOOL
A machine featuring a treatment tool that grinds a surface to a desired profile, imparts a desired roughness to that surface, and removes contamination from the surface, the machine configured to control multiple independent input variables simultaneously, the controllable variables selected from the group consisting of (i) velocity, (ii) rotation, and (iii) dither of the treatment tool, and (iv) pressure of the treatment tool against the surface. The machine can move the treatment tool with six degrees of freedom.
B24B 1/00 - Processes of grinding or polishingUse of auxiliary equipment in connection with such processes
B24B 37/005 - Control means for lapping machines or devices
H01L 21/302 - Treatment of semiconductor bodies using processes or apparatus not provided for in groups to change the physical characteristics of their surfaces, or to change their shape, e.g. etching, polishing, cutting
H01L 21/304 - Mechanical treatment, e.g. grinding, polishing, cutting
20.
METHOD FOR DETERMINISTIC FINISHING OF A CHUCK SURFACE
In a deterministic setting for finishing the support surface of a chuck such as a wafer chuck, the treatment tool may have a contacting surface shaped as a ring, annulus, or toroid, or at least such will be the form of contact when the treatment tool is brought into contact with a flat surface. The treatment tool may have about the same hardness as the work piece (e.g., the wafer chuck) that is being finished. In one embodiment, the treatment tool, or at least the flat contacting surface, is made from silicon carbide (SiC), or contains SiC, for example, in the form of a composite material such as reaction-bonded SiC.
B24B 7/22 - Machines or devices designed for grinding plane surfaces on work, including polishing plane glass surfacesAccessories therefor characterised by a special design with respect to properties of the material of non-metallic articles to be ground for grinding inorganic material, e.g. stone, ceramics, porcelain
H01L 21/304 - Mechanical treatment, e.g. grinding, polishing, cutting
A thermoelectric cooling system comprises at least one thermoelectric cooling module and an electronic circuit. The at least one thermoelectric cooling module is arranged in at least one zone. The electronic circuit is electrically coupled to at least one of the thermoelectric cooling modules. Each of the thermoelectric cooling modules comprises a first plate, a sink, a plurality of thermoelectric elements, and a second plate. The thermoelectric elements are coupled to the first plate and the second plate. The first plate is arranged to be thermally coupled to a first surface. The sink is arranged to be thermally coupled to an environment and is configured to dissipate heat by evaporating a liquid from the sink to the environment. The second plate is arranged to be thermally coupled to the sink.
F25B 21/02 - Machines, plants or systems, using electric or magnetic effects using Peltier effectMachines, plants or systems, using electric or magnetic effects using Nernst-Ettinghausen effect
22.
ELECTRONIC DEVICE HOUSING UTILIZING A METAL MATRIX COMPOSITE
A housing used for electronic devices includes a structural frame element formed of a metal matrix composite (MMC) for providing improved stiffness over other materials currency in use. The MMC is a metal matrix (formed of a material such as aluminum), with a reinforcing material (such as a glass fiber or ceramic) dispersed within the metal matrix. The composition of the reinforcing material, as well as the ratio of reinforcing material to metal, define the stiffness (resistance to bending) and/or strength (resistance to breaking) achieved, and various compositions may be used for different housings, depending on the use of the electronic device. The element may be configured as a structural frame member, or may be embedded within another material forming the structural frame element. In another embodiment, the MMC may be used to form various components of the complete housing, including the enclosure itself.
A housing used for electronic devices includes a structural frame element formed of a metal matrix composite (MMC) for providing improved stiffness over other materials currency in use. The MMC is a metal matrix (formed of a material such as aluminum), with a reinforcing material (such as a glass fiber or ceramic) dispersed within the metal matrix. The composition of the reinforcing material, as well as the ratio of reinforcing material to metal, define the stiffness (resistance to bending) and/or strength (resistance to breaking) achieved, and various compositions may be used for different housings, depending on the use of ihe electronic device. The element may be configured as a structural frame member, or may be embedded within another material forming the stnictural frame element. In another embodiment, the MMC may be used to form various components of the complete housing, including the enclosure itself.
A broad area laser diode (10) is configured to include an anti-guiding layer (30, 60) located outside of the active region of the device. The anti-guiding layer is formed of high refractive index material that serves to de-couple unwanted, higher-order lateral modes (attributed to thermal lensing problems) from the lower-order mode output beam of output signal from the laser diode. The anti-guiding layer is formed using a single epitaxial growth step either prior to or subsequent to the steps used to grow the epitaxial layers forming the laser diode itself, thus creating a structure that provides suppression of unwanted higher-order modes without requiring a modification of specific process steps used to fabricate the laser diode itself.
A diode laser bar assembly is formed to exhibit a relatively low thermal resistance, which also providing an increased range of conditions over which the internal stress conditions may be managed. In particular, the sub-mount configuration of the prior art is replaced by a pair of platelets (12,14), disposed above and below the diode laser bar (10) so as to form a "sandwich" structure. The bottom platelet (14) is disposed between the heat sink (16) and the diode laser bar (10). Thus, the bottom platelet may be relatively thin, creating a low thermal resistance configuration. The combination of the top and bottom platelets provides the ability to create various configurations and designs that best accommodate stress conditions for a particular situation. The LD bar may be based on GaAs semiconductors and the heat sink from copper and the platelets may be made from CuW in order to reduce stress between the LD bar and the heat sink.
In a method of forming a diamond film, substrate, or window, a silicon substrate is provided and the diamond film, substrate, or window is CVD grown on a surface of the silicon substrate. The grown diamond film, substrate, or window has an aspect ratio > 100, wherein the aspect ratio is a ratio of a largest dimension of the diamond film, substrate or window divided by a thickness of the diamond film. The silicon substrate can optionally be removed or separated from the grown diamond film, substrate, or window.
C23C 16/453 - Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating passing the reaction gases through burners or torches, e.g. atmospheric pressure CVD
C23C 16/455 - Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into the reaction chamber or for modifying gas flows in the reaction chamber
Diamond-containing articles such as composite materials shaped as some specific article, can be engineered such that bodies that contact the article only contact diamond. In an embodiment, the article may be in the form of equipment for handling semiconductor wafers such as vacuum or electrostatic chucks. In one embodiment, the diamond-containing article can be a composite of diamond particulate reinforcing a Si/SiC body such as reaction-bonded SiC. Lapping the diamond-reinforced RBSC body with progressively finer diamond grit removes some of the SiC/Si matrix material, leaving diamond particles of uniform height "standing proud" above the rest of the surface of the formed article. Further, if the diamond-containing article is sufficiently electrically conductive, it may be machinable using electrical discharge machining.
B24D 3/00 - Physical features of abrasive bodies, or sheets, e.g. abrasive surfaces of special natureAbrasive bodies or sheets characterised by their constituents
B24B 53/00 - Devices or means for dressing or conditioning abrasive surfaces
C04B 35/573 - Fine ceramics obtained by reaction sintering
H01L 21/67 - Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereofApparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components
H01L 21/683 - Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereofApparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components for supporting or gripping
Optical modules as used in various types of communication systems are formed to include a flexible substrate to support various optical, electronic, and opto-electronic module components in a manner that can accommodate various packaging constraints. The flexible substrate is formed of a polyimide film is known to exhibit excellent electrical isolation properties, even though the films are generally relatively thin (on the order of 10-100 μηΐ5, in most cases). The flexible polyimide film is sized to accommodate the constraints of a given package "footprint"; more particularly, sized to fit an open 'floor area' within package, allowing for a populated film to be placed around various other "fixed-in-place" elements. The polyimide film is easily cut and trimmed to exhibit whatever topology is convenient, while providing enough surface area to support the affixed components and associated optical fiber traces.
A fiber-based optical amplifier is assembled in a compact configuration by utilizing a flexible substrate to support the amplifying fiber as flat coils that are "spun" onto the substrate. The supporting structure for the amplifying fiber is configured to define the minimal acceptable bend radius for the fiber, as well as the maximum diameter that fits within the overall dimensions of the amplifier package. A pressure-sensitive adhesive coating is applied to the flexible substrate to hold the fiber in place. By using a flexible material with an acceptable insulative quality (such as a polyimide), further compactness in the final assembly is achieved by 1 ocating the electronics in a space underneath the fiber enclosure.
G02B 6/06 - Light guidesStructural details of arrangements comprising light guides and other optical elements, e.g. couplings formed by bundles of fibres the relative position of the fibres being the same at both ends, e.g. for transporting images
An optical amplifier module is configured as a multi-stage free-space optics arrangement, including at least an input stage and an output stage. The actual amplification is provided by a separate fiber-based component coupled to the module. A propagating optical input signal and pump light are provided to the input stage, with the amplified optical signal exiting the output stage. The necessary operations performed on the signal within each stage are provided by directing free- space beams through discrete optical components. The utilization of discrete optical components and free-space beams significantly reduces the number of fiber splices and other types of coupling connections required in prior art amplifier modules, allowing for an automated process to create a "pluggable" optical amplifier module of small form factor proportions.
A perforated film electrode for a pinned electrostatic chuck that lies below the top surface of the pins in the valleys or interstices between pins, below the elevation of the top surface of the pins, and is attached to the body of the chuck. In one embodiment, the perforated film electrode assembly features a thin film electrode sandwiched between thin sheets of electrically insulating material. The top, outer or exposed surface of the perforated film electrode assembly has a flatness that is maintained within 3 microns. That is, the distance or elevation between the tops of the pins and the top surface of the perforated film unit is maintained within plus or minus 3 microns. A tool for producing a uniform elevation of the top and bottom sheets or layers of electrically insulating material also is taught.
H01L 21/683 - Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereofApparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components for supporting or gripping
H01L 21/687 - Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereofApparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches
A densely -spaced single-emitter laser diode configuration is created by using a laser bar (or similar array configuration) attached to a submount component of a size sufficient to adequately support the enter laser structure. The surface of the submount component upon which the laser structure is attached is metallized and used to form the individual electrical contacts to the laser diodes within the integrated laser structure. Once attached to each other, the laser structure is singulated by creating vertical separations between adjacent light emission areas. The submount metallization is similarly segmented, creating separate electrodes that are used to individually energize their associated laser diodes.
H01S 5/343 - Structure or shape of the active regionMaterials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers in AIIIBV compounds, e.g. AlGaAs-laser
33.
COMPOSITE SUBSTRATE WITH ALTERNATING PATTERN OF DIAMOND AND METAL OR METAL ALLOY
A composite substrate includes a submount substrate of an alternating pattern of electrically insulative portions, pieces, layers or segments and electrically conductive portions, pieces, layers or segments, and a shaft, back or plate for supporting the alternating pattern of electrically insulative portions and electrically conductive portions. An active device having a P-N junction can be mounted on the submount substrate. The electrically insulative portions, pieces, layers or segments can be formed from diamond while the electrically conductive portions, pieces, layers or segments can be formed from a metal or metal alloy.
In a system and method of growing a diamond film, a cooling gas flows between a substrate and a substrate holder of a plasma chamber and a process gas flows into the plasma chamber. In the presence of an plasma in the plasma chamber, a temperature distribution across the top surface of the substrate and/or across a growth surface of the growing diamond film is controlled whereupon, during diamond film growth, the temperature distribution is controlled to have a predetermined temperature difference between a highest temperature and a lowest temperature of the temperature distribution. The as-grown diamond film has a total thickness variation (TTV) < 10%, < 5%, or < 1%; and/or a birefringence between 0 and 100 nm/cm, 0 and 80 nm/cm, 0 and 60 nm/cm, 0 and 40 nm/cm, 0 and 20 nm/cm, 0 and 10 nm/cm, or 0 and 5 nm/cm.
C23C 16/44 - Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
C23C 16/50 - Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges
C23C 16/511 - Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges using microwave discharges
C23C 16/513 - Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges using plasma jets
In a method of chemical vapor deposition (CVD) growth of a polycrystalline diamond film in a CVD reactor, a gas mixture of gaseous hydrogen and a gaseous hydrocarbon is introduced into the CVD reactor. A plasma formed from the gas mixture is maintained above a surface of a conductive substrate disposed in the CVD reactor and causes a polycrystalline diamond film to grow on the surface of the conductive substrate. A temperature T at the center of the polycrystalline diamond film is controlled during growth of the polycrystalline diamond film. The CVD grown polycrystalline diamond film includes diamond crystallites that can have a percentage of orientation along a [110] diamond lattice direction > 70% of the total number of diamond crystallites forming the polycrystalline diamond film.
An arrangement for providing real-time, in-service OTDR measurements in an optical communication system utilizing distributed Raman amplification. One or more of the laser diodes used to provide the pump light necessary to create optical gain is modified to also generate short duration pulses that ride above or below the conventional pump light. These short duration pulses (which co- exist with the pump light within the optical fiber) are used in performing OTDR measurements, with a conventional processing system used to evaluate reflected pulses and create the actual OTDR measurements.
H04B 10/071 - Arrangements for monitoring or testing transmission systemsArrangements for fault measurement of transmission systems using a reflected signal, e.g. using optical time domain reflectometers [OTDR]
H04B 10/25 - Arrangements specific to fibre transmission
In accordance with one embodiment, there is provided a thermoelectric-based air conditioning system (1000). The system (1000) includes at least a first supply air channel and a separate second supply air channel disposed in a housing. The system (1000) also includes a first thermoelectric cooler (TEC) assembly (340) forming at least a portion of the first supply air channel and configured to independently condition air within the first supply air channel. The system further includes a second TEC assembly (340) forming at least a portion of the second supply air channel and configured to independently condition air within the second supply air channel. The system includes a single heat exchanger (1030) configured to transfer heat with both the first TEC assembly (340) and the second TEC assembly (340).
F25B 21/02 - Machines, plants or systems, using electric or magnetic effects using Peltier effectMachines, plants or systems, using electric or magnetic effects using Nernst-Ettinghausen effect
38.
SYSTEM FOR OVER-MOLDED PCB SEALING RING FOR TEC HEAT EXCHANGERS
A thermoelectric-based air conditioning system is provided. The system includes at least a first supply air channel and a separate second supply air channel disposed in a housing. The system also includes a first thermoelectric cooler (TEC) forming at least a portion of the first supply air channel and configured to independently condition air within the first supply air channel. The system further includes a second TEC forming at least a portion of the second supply air channel and configured to independently condition air within the second supply air channel. The system includes a printed circuit board (PCB) configured to provide an electrical connection between the first TEC and the second TEC. The system further includes a mold substrate configured to over-mold the first TEC and the second TEC.
A multilayer substrate includes a diamond layer CVD grown on a composite layer. The composite layer includes particles of diamond and silicon carbide and, optionally, silicon. A loading level (by volume) of diamond in the composite layer can be ≥ 5 %; ≥ 20 %; ≥ 40 %; or ≥ 60 %. The multilayer substrate can be used as an optical device; a detector for detecting radiation particles or electromagnetic waves; a device for cutting, drilling, machining, milling, lapping, polishing, coating, bonding, or brazing; a braking device; a seal; a heat conductor; an electromagnetic wave conductor; a chemically inert device for use in a corrosive environment, a strong oxidizing environment, or a strong reducing environment, at an elevated temperature, or under a cryogenic condition; or a device for polishing or planarization of other devices, wafers or films.
C04B 35/52 - Shaped ceramic products characterised by their compositionCeramic compositionsProcessing powders of inorganic compounds preparatory to the manufacturing of ceramic products based on non-oxides based on carbon, e.g. graphite
C04B 38/00 - Porous mortars, concrete, artificial stone or ceramic warePreparation thereof
In a method of forming polycrystalline SiC grain material, low-density, gas-permeable and vapor-permeable bulk carbon is positioned at a first location inside of a graphite crucible and a mixture of elemental silicon and elemental carbon is positioned at a second location. The mixture and the bulk carbon are heated to a first temperature below the melting point of the elemental Si to remove adsorbed gas, moisture and/or volatiles from the mixture and the bulk carbon. The mixture and bulk carbon are then heated to a second temperature that causes the elemental Si and the elemental C to react forming as-synthesized SiC inside of the crucible. The as-synthesized SiC and the bulk carbon are then heated in a way to cause the as-synthesized SiC to sublime and produce vapors that migrate into, condense on and react with the bulk carbon forming polycrystalline SiC material.
A sublimation grown SiC single crystal includes vanadium dopant incorporated into the SiC single crystal structure via introduction of a gaseous vanadium compound into a growth environment of the SiC single crystal during growth of the SiC single crystal.
A fiber ribbon cable that includes a plurality of ribbon tubes arranged in a pattern, wherein one of the ribbon tubes contains an optical fiber and an adjacent ribbon tube contains an electric heating element such that when heated the electric heating element is able to adjust the temperature of the optical fiber.
G02B 6/04 - Light guidesStructural details of arrangements comprising light guides and other optical elements, e.g. couplings formed by bundles of fibres
A system includes a first plate and a second plate. The first plate is arranged to be thermally coupled to a first surface and the second plate is arranged to be thermally coupled to an environment. The environment has a temperature that is different than the first surface. The system also includes a thermoelectric device that includes a plurality of thermoelectric elements. The thermoelectric device includes a third plate coupled to the plurality of thermoelectric elements and thermally coupled to the first plate. The thermoelectric device also includes a fourth plate coupled to the plurality of thermoelectric elements and thermally coupled to the second plate. The system also includes a dielectric fluid arranged between the first plate and the second plate. The thermoelectric elements are submersed in the dielectric fluid.
H01L 35/32 - SEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR - Details thereof operating with Peltier or Seebeck effect only characterised by the structure or configuration of the cell or thermocouple forming the device
The invention relates to a beam combiner for a Raman pump unit. The beam combiner is configured to receive and propagate at least two orthogonally polarised collimated light beams. The beam combiner comprises a birefringent prism and an optically isotropic prism. Each of the prisms is located in the path of the beams and configured so that the beams are substantially parallel to each other when they emanate from the beam combiner.
A system and method is provided for controlling condensation generation in an air conditioning system for use in a bed (mattress). During active operation of the air conditioning system to generate conditioned air, the relative humidity of ambient air is measured and operation of one or more thermoelectric devices (TEDs) within the air conditioning system in response to the measured relative humidity is adjusted to control condensate buildup. In addition, during a subsequent drying operation, the relative humidity of the ambient air is measured and the drying operation is adjusted or otherwise controlled based on the measurement.
A47C 21/04 - Devices for ventilating, cooling or heating
F24F 11/76 - Control systems characterised by their outputsConstructional details thereof for controlling the supply of treated air, e.g. its pressure for controlling air flow rate or air velocity by means responsive to temperature, e.g. bimetal springs
Manufacture of multi-junction solar cells, and devices thereof, are disclosed. The architectures are also adapted to provide for a more uniform and consistent fabrication of the solar cell structures, leading to improved yields and lower costs. Certain solar cells may further include one or more compositional gradients of one or more semiconductor elements in one or more semiconductor layers, resulting in a more optimal solar cell device.
In a crystal growth apparatus and method, polycrystalline source material and a seed crystal are introduced into a growth ambient comprised of a growth crucible disposed inside of a furnace chamber. In the presence of a first sublimation growth pressure, a single crystal is sublimation grown on the seed crystal via precipitation of sublimated source material on the seed crystal in the presence of a flow of a first gas that includes a reactive component that reacts with and removes donor and/or acceptor background impurities from the growth ambient during said sublimation growth. Then, in the presence of a second sublimation growth pressure, the single crystal is sublimation grown on the seed crystal via precipitation of sublimated source material on the seed crystal in the presence of a flow of a second gas that includes dopant vapors, but which does not include the reactive component.
A method and system of forming large-diameter SiC single crystals suitable for fabricating high crystal quality SiC substrates of 100, 125, 150 and 200 mm in diameter are described. The SiC single crystals are grown by a seeded sublimation technique in the presence of a shallow radial temperature gradient. During SiC sublimation growth, a flux of SiC bearing vapors filtered from carbon particulates is substantially restricted to a central area of the surface of the seed crystal by a separation plate disposed between the seed crystal and a source of the SiC bearing vapors. The separation plate includes a first, substantially vapor-permeable part surrounded by a second, substantially non vapor-permeable part. The grown crystals have a flat or slightly convex growth interface. Large-diameter SiC wafers fabricated from the grown crystals exhibit low lattice curvature and low densities of crystal defects, such as stacking faults, inclusions, micropipes and dislocations.
C30B 11/14 - Single-crystal-growth by normal freezing or freezing under temperature gradient, e.g. Bridgman- Stockbarger method characterised by the seed, e.g. its crystallographic orientation
An active thermoelectric plate exchanger is provided that includes a plurality of thermally conductive plates and a thermoelectric (TE) assembly having an array of thermoelectric modules (TEM) (e.g., TE coolers or TE generators) for heating/cooling or power generation. For cooling/heating, the TECs actively transfer heat between two fluids. For power generation, the TEGs generate and output power when two fluids having a thermal differential therebetween is applied across the TEGs. Several TE assemblies may be disposed in a stacked configuration between thermally conductive plates contacting the fluids. Additional fluid turbulence generating structures may be included with the fluid flow chambers/paths to generate fluid turbulence and increase thermal efficiency. These structures may include a thermally conductive plate with surface structures or may be a thermally conductive wire cloth, woven wire or wire mesh or screen. The resulting plate exchanger is modular and scalable.
In one embodiment, a method for forming a metallized ceramic includes thermal spraying metal directly onto a first side of a ceramic plate. The metal comprising aluminum. The method also includes densifying the thermally ceramic plate after spraying the metal onto the first side of the ceramic plate.
A semiconductor laser device (100) formed on a semiconductor substrate (102), the device comprising: a passivation layer (118) arranged on an upper surface of the device structure for resisting moisture ingress, wherein the passivation layer comprises an inner layer (118a) deposited on the upper surface of the device by atomic layer deposition and an outer layer 118b deposited on the inner layer, and comprising a material that is inert in the presence of water.
H01S 5/183 - Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities having only vertical cavities, e.g. vertical cavity surface-emitting lasers [VCSEL]
In accordance with one embodiment of the present disclosure, a thermoelectric device includes a plurality of thermoelectric elements that each include a diffusion barrier. The diffusion barrier includes a refractory metal. The thermoelectric device also includes a plurality of conductors coupled to the plurality of thermoelectric elements. The plurality of conductors include aluminum. In addition, the thermoelectric device includes at least one plate coupled to the plurality of thermoelectric elements using a braze. The braze includes aluminum.
A distribution system is adapted for use with a mattress and a personal comfort system with an air conditioning system operable for outputting a conditioned air flow. The distribution system includes at least top and bottom layers of fabric material and a spacer structure disposed between the bottom and top layers. The spacer structure defines an internal volume within the distribution layer and is configured to enable the received conditioned air flow to flow therethrough. This flow of conditioned air has a cooling or heating effect on a body on the mattress. A system and method for controlling ventilation in a bed (mattress) includes an user-controlled air conditioning control system for generating and supplying a conditioned air flow to a distribution layer/system located on or near the mattress. The distribution layer/system includes a spacer structure surrounded by fabric material(s) and configured to receive the conditioned air flow and provide a cooling or heating effect to a body adjacent the mattress.
A47C 7/74 - Adaptations for incorporating lamps, radio sets, bars, telephones, ventilation, heating or cooling arrangements or the like for ventilation, heating or cooling
A47C 21/04 - Devices for ventilating, cooling or heating
F24F 1/028 - Self-contained room units for air-conditioning, i.e. with all apparatus for treatment installed in a common casing characterised by air supply means, e.g. fan casings, internal dampers or ducts
F24F 7/08 - Ventilation with ducting systems with forced air circulation, e.g. by fan with separate ducts for supplied and exhausted air
54.
SYSTEM AND METHOD FOR THERMOELECTRIC PERSONAL COMFORT CONTROLLED BEDDING
A distribution system is adapted for use with a mattress and a personal comfort system with an air conditioning system operable for outputting a conditioned air flow. The distribution system includes at least top and bottom layers of fabric material and a spacer structure disposed between the bottom and top layers. The spacer structure defines an internal volume within the distribution layer and is configured to enable the received conditioned air flow to flow therethrough. This flow of conditioned air has a cooling or heating effect on a body on the mattress. A system and method for controlling ventilation in a bed (mattress) includes an user-controlled air conditioning control system for generating and supplying a conditioned air flow to a distribution layer/system located on or near the mattress. The distribution layer/system includes a spacer structure surrounded by fabric material(s) and configured to receive the conditioned air flow and provide a cooling or heating effect to a body adjacent the mattress.
In SiC sublimation crystal growth, a crucible is charged with SiC source material and SiC seed crystal in spaced relation and a baffle is disposed in the growth crucible around the seed crystal. A first side of the baffle in the growth crucible defines a growth zone where a SiC single crystal grows on the SiC seed crystal. A second side of the baffle in the growth crucible defines a vapor-capture trap around the SiC seed crystal. The growth crucible is heated to a SiC growth temperature whereupon the SiC source material sublimates and forms a vapor which is transported to the growth zone where the SiC crystal grows by precipitation of the vapor on the SiC seed crystal. A fraction of this vapor enters the vapor-capture trap where it is removed from the growth zone during growth of the SiC crystal.
A physical vapor transport growth system includes a growth chamber charged with SiC source material and a SiC seed crystal in spaced relation and an envelope that is at least partially gas-permeable disposed in the growth chamber. The envelope separates the growth chamber into a source compartment that includes the SiC source material and a crystallization compartment that includes the SiC seed crystal. The envelope is formed of a material that is reactive to vapor generated during sublimation growth of a SiC single crystal on the SiC seed crystal in the crystallization compartment to produce C-bearing vapor that acts as an additional source of C during the growth of the SiC single crystal on the SiC seed crystal.
A crucible has a first resistance heater is disposed in spaced relation above the top of the crucible and a second resistance heater with a first resistive section disposed in spaced relation beneath the bottom of the crucible and with a second resistive section disposed in spaced relation around the outside of the side of the crucible. The crucible is charged with a seed crystal at the top of an interior of the crucible and a source material in the interior of the crucible in spaced relation between the seed crystal and the bottom of the crucible. Electrical power of a sufficient extent is applied to the first and second resistance heaters to create in the interior of the crucible a temperature gradient of sufficient temperature to cause the source material to sublimate and condense on the seed crystal thereby forming a growing crystal.
An electrostatic chuck featuring a chuck support structure, and a plurality of discrete electrostatic components. Each of the electrostatic components features at least one termination attached to an electrode on an electrically insulating material. At least some of the discrete electrostatic components are removably attached to the chuck support structure or to a substrate that is interposed between said chuck support structure and the electrostatic components.
H01L 21/683 - Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereofApparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components for supporting or gripping
H01L 21/687 - Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereofApparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches
H01L 21/203 - Deposition of semiconductor materials on a substrate, e.g. epitaxial growth using physical deposition, e.g. vacuum deposition, sputtering
H01L 21/205 - Deposition of semiconductor materials on a substrate, e.g. epitaxial growth using reduction or decomposition of a gaseous compound yielding a solid condensate, i.e. chemical deposition
In a method of annealing a Cd1-xZnxTe sample/wafer, surface contamination is removed from the sample/wafer and the sample/wafer is then introduced into a chamber. The chamber is evacuated and Hydrogen or Deuterium gas is introduced into the evacuated chamber. The sample/wafer is heated to a suitable annealing temperature in the presence of the Hydrogen or Deuterium gas for a predetermined period of time.
C30B 15/04 - Single-crystal growth by pulling from a melt, e.g. Czochralski method adding crystallising materials or reactants forming it in situ to the melt adding doping materials, e.g. for n–p-junction
C30B 11/00 - Single-crystal-growth by normal freezing or freezing under temperature gradient, e.g. Bridgman- Stockbarger method
60.
STABILIZING 4H POLYTYPE DURING SUBLIMATION GROWTH OF SIC SINGLE CRYSTALS
A SiC single crystal is grown by physical vapor transport (PVT) in a graphite growth chamber (6), the interior of which is charged with a SiC source material (3) and a SiC single crystal seed (4) in spaced relation. During PVT growth of the SiC single crystal (5), the growth chamber further includes Ce. The SiC single crystal (5) grows on the SiC single crystal seed (4) in response to heating the interior of the growth chamber to a growth temperature and in the presence of a temperature gradient in the growth chamber whereupon the temperature of the SiC single crystal seed (4) is lower than the temperature of the SiC source material. The Ce can include either Ce silicide or Ce carbide.
A method of fabricating an SiC single crystal includes (a) physical vapor transport (PVT) growing a SiC single crystal on a seed crystal in the presence of a temperature gradient, wherein an early-to-grow portion of the SiC single crystal is at a lower temperature than a later-to-grow portion of the SiC single crystal. Once grown, the SiC single crystal is annealed in the presence of a reverse temperature gradient, wherein the later-to-grow portion of the SiC single crystal is at a lower temperature than the early-to-grow portion of the SiC single crystal.
In the growth of a SiC boule, a growth guide is provided inside of a growth crucible that is charged with SiC source material at a bottom of the crucible and a SiC seed crystal at a top of the crucible. The growth guide has an inner layer that defines at least part of an opening in the growth guide and an outer layer that supports the inner layer in the crucible. The opening faces the source material with the seed crystal positioned at an end of the opening opposite the source material. The inner layer is formed from a first material having a higher thermal conductivity than the second, different material forming the outer layer. The source material is sublimation grown on the seed crystal in the growth crucible via the opening in the growth guide to thereby form the SiC boule on the seed crystal.
C30B 35/00 - Apparatus not otherwise provided for, specially adapted for the growth, production or after-treatment of single crystals or of a homogeneous polycrystalline material with defined structure
C30B 23/00 - Single-crystal growth by condensing evaporated or sublimed materials
Adsorbed gaseous species and elements in a carbon (C) powder and a graphite crucible are reduced by way of a vacuum and an elevated temperature sufficient to cause reduction. A wall and at least one end of an interior of the crucible is lined with C powder purified in the above manner. An Si + C mixture is formed with C powder purified in the above manner and Si powder or granules. The lined crucible is charged with the Si + C mixture. Adsorbed gaseous species and elements are reduced from the Si + C mixture and the crucible by way of a vacuum and an elevated temperature that is sufficient to cause reduction but which does not exceed the melting point of Si. Thereafter, by way of a vacuum and an elevated temperature, the Si + C mixture is caused to react and form polycrystalline SiC.
A semiconductor radiation detector (1', 1'', 1''', 1'') includes a body of semiconducting material (2) responsive to ionizing radiation for generating electron-hole pairs in the bulk of said body (2). A conductive cathode (4) is disposed on one side of the body (2) and an anode structure (6) is disposed on the other side of the body (2). The anode structure (6) includes a first set of spaced elongated conductive fingers (8) in contact with the body (2) and defining between each pair of fingers thereof an elongated gap (10) and a second set of spaced elongated conductive fingers (12) positioned above the surface of the body (2) that includes spaced elongated conductive fingers (8). Each finger of the second set of spaced elongated conductive fingers (12) overlays, either partially or wholly, the elongated gap between a pair of adjacent fingers of the first set of spaced elongated conductive fingers (8).
H01L 25/04 - Assemblies consisting of a plurality of individual semiconductor or other solid-state devices all the devices being of a type provided for in a single subclass of subclasses , , , , or , e.g. assemblies of rectifier diodes the devices not having separate containers
66.
SIC SINGLE CRYSTALS WITH REDUCED DISLOCATION DENSITY GROWN BY STEP-WISE PERIODIC PERTURBATION TECHNIQUE
In a crystal growth method, a seed crystal 8 and a source material 4 are provided in spaced relation inside of a growth crucible 6. Starting conditions for the growth of a crystal 14 in the growth crucible 6 are then established therein. The starting conditions include: a suitable gas inside the growth crucible 6, a suitable pressure of the gas inside the growth crucible 6, and a suitable temperature in the growth crucible 6 that causes the source material 4 to sublimate and be transported via a temperature gradient in the growth crucible 6 to the seed crystal 8 where the sublimated source material precipitates. During growth of the crystal 14 inside the growth crucible 6, at least one of the following growth conditions are intermittently changed inside the growth crucible 6 a plurality of times: the gas in the growth crucible 6, the pressure of the gas in the growth crucible 6, and the temperature in the growth crucible 6.
A radiation detection and counting system (2) includes a radiation detector element (5) for outputting a signal related to an energy of a radiation event received thereby and an amplifier (8) for amplifying the signal output by the detector element (5). A gain equalization circuit (10) adjusts the gain of the amplified output signal and a plurality of comparators (12) compare the gain adjusted amplified output signal to a like plurality of different valued threshold signals that are independently adjustable of each other. A plurality of counters (20) is operative whereupon only the counter associated with the one comparator (12) that changes state in response to the peak of the gain adjusted amplified output signal exceeding the value of the trigger threshold signal thereof is incremented. A storage (24) stores the incremented value of each counter (20) accumulated over a sample time interval and data output logic circuit (26) transfers the stored accumulated counts out of the storage.
H01J 43/30 - Circuit arrangements not adapted to a particular application of the tube and not otherwise provided for
H01J 31/50 - Image-conversion or image-amplification tubes, i.e. having optical, X-ray, or analogous input, and optical output
H03K 17/78 - Electronic switching or gating, i.e. not by contact-making and -breaking characterised by the use of specified components by the use, as active elements, of opto-electronic devices, i.e. light-emitting and photoelectric devices electrically- or optically-coupled
G01R 19/00 - Arrangements for measuring currents or voltages or for indicating presence or sign thereof
In operation of a photon counting detecting system (10), a number of pulse counts output by least one pixel (20) of a photon counting detector in response to experiencing a photon flux density during a sample interval is acquired and a photon flux density (46) or value related thereto corresponding to the pulse counts output by the pixel (20) is determined. A correction (48) for the thus determined photon flux density (46) or value related thereto is determined. A corrected number of pulse counts (52) is determined for the pixel (20) as a function of the thus determined corrected photon flux density value or value related thereto. An image can be displayed that is a function of the corrected number of pulse counts for pixels of the system.
Composite bodies made by a silicon metal infiltration process that feature a silicon intermetallic, e.g., a metal suicide. Not only does this give the composite material engineer greater flexibility in designing or tailoring the physical properties of the resulting composite material, but the infiltrant also can be engineered compositionally to have much diminished amounts of expansion upon solidification, thereby enhancing net-shape- making capabilities. These and other consequences of engineering the metal component of composite bodies made by silicon infiltration permit the fabrication of large structures of complex shape.
In method of crystal growth, an interior of a crystal growth chamber (2) is heated to a first temperature in the presence of a first vacuum pressure whereupon at least one gas absorbed in a material (4) disposed inside the chamber is degassed therefrom. The interior of the chamber is then exposed to an inert gas at a second, higher temperature in the presence of a second vacuum pressure that is at a higher pressure than the first vacuum pressure. The inert gas pressure in the chamber is then reduced to a third vacuum pressure that is between the first and second vacuum pressures and the temperature inside the chamber is lowered to a third temperature that is between the first and second temperatures, whereupon source material (10) inside the chamber vaporizes and deposits on a seed crystal (12) inside the chamber.
C23C 16/44 - Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
H01L 21/205 - Deposition of semiconductor materials on a substrate, e.g. epitaxial growth using reduction or decomposition of a gaseous compound yielding a solid condensate, i.e. chemical deposition
71.
METAL MATRIX COMPOSITE BODIES, AND METHODS FOR MAKING SAME
A metal matrix composite (MMC) material that is castable, or can be rendered castable, is melted and cast into a mold or crucible, and at least a portion of the plurality of reinforcement bodies is permitted to at least partially settle out of their suspension in the molten matrix metal. The casting is solidified, and the sparsely loaded supernatant is separated from the zone of the casting containing the sediment--either by cutting, sawing, etc., or by decanting the supernatant when the casting was still in a molten condition. In a preferred embodiment, during the settling and/or the solidification process, mechanical energy, such as in the form of oscillations, is applied to the MMC melt. The applied energy permits the reinforcement bodies to nestle and pack more efficiently, thereby increasing their volumetric loading in the cast composite.
