A method and processing chamber for plenum driven hydroxyl combustion oxidation. A mixture is produced in a plenum. The mixture includes a first reactive gas injected from a first inlet and a second reactive gas injected from a second inlet. The mixture is injected towards a substrate of a processing chamber at a jet gas velocity greater than a flame gas velocity. A radical is produced as a function of the first gas and the second gas while heating the chamber.
C23C 16/455 - Revêtement chimique par décomposition de composés gazeux, ne laissant pas de produits de réaction du matériau de la surface dans le revêtement, c.-à-d. procédés de dépôt chimique en phase vapeur [CVD] caractérisé par le procédé de revêtement caractérisé par le procédé utilisé pour introduire des gaz dans la chambre de réaction ou pour modifier les écoulements de gaz dans la chambre de réaction
C23C 16/458 - Revêtement chimique par décomposition de composés gazeux, ne laissant pas de produits de réaction du matériau de la surface dans le revêtement, c.-à-d. procédés de dépôt chimique en phase vapeur [CVD] caractérisé par le procédé de revêtement caractérisé par le procédé utilisé pour supporter les substrats dans la chambre de réaction
3.
TEMPERATURE TUNING BY EMISSIVITY VARIATION ON SUSCEPTOR BY LASER PATTERNING
An apparatus, a method, and system for temperature tuning by emissivity variation on susceptor by laser patterning. In an embodiment, a method for performing laser patterning on a chamber component of a processing chamber is provided. The method includes receiving a chamber component of a processing chamber and performing laser patterning on one side of the chamber component of the processing chamber to form a plurality of patterned regions and a non-patterned region. The plurality of patterned regions having a different emissivity than the non-patterned region.
H01L 21/687 - Appareils spécialement adaptés pour la manipulation des dispositifs à semi-conducteurs ou des dispositifs électriques à l'état solide pendant leur fabrication ou leur traitementAppareils spécialement adaptés pour la manipulation des plaquettes pendant la fabrication ou le traitement des dispositifs à semi-conducteurs ou des dispositifs électriques à l'état solide ou de leurs composants pour le maintien ou la préhension en utilisant des moyens mécaniques, p. ex. mandrins, pièces de serrage, pinces
H01L 21/67 - Appareils spécialement adaptés pour la manipulation des dispositifs à semi-conducteurs ou des dispositifs électriques à l'état solide pendant leur fabrication ou leur traitementAppareils spécialement adaptés pour la manipulation des plaquettes pendant la fabrication ou le traitement des dispositifs à semi-conducteurs ou des dispositifs électriques à l'état solide ou de leurs composants
A substrate gripper includes a gripper body having a base configured to support a substrate by vacuum. The substrate gripper further includes a bowl-shaped collector coupled with the gripper body and configured to collect a flow of air. The substrate gripper further includes a bell-shaped flow cone coupled with the gripper body and configured to direct the flow of air toward an edge of the gripper body.
H01L 21/683 - Appareils spécialement adaptés pour la manipulation des dispositifs à semi-conducteurs ou des dispositifs électriques à l'état solide pendant leur fabrication ou leur traitementAppareils spécialement adaptés pour la manipulation des plaquettes pendant la fabrication ou le traitement des dispositifs à semi-conducteurs ou des dispositifs électriques à l'état solide ou de leurs composants pour le maintien ou la préhension
B65G 47/91 - Dispositifs pour saisir et déposer les articles ou les matériaux comportant des pinces pneumatiques, p. ex. aspirantes
A method includes grouping signal traces based on signal trace characteristics. The method includes sampling at least one of a set of signal traces to a uniform time sequence and generating an image including visual indicators associated with the set of signal traces with signal trace characteristics. Each visual indicator corresponds to a signal characteristic of a respective signal trace of the set of signal traces and a time value based on the uniform time sequence. The method includes detecting a defect in operation of one or more components of manufacturing equipment based on a deviation of one of the visual indicators of the image. The method includes classifying the defect based on the respective signal trace corresponding to the image.
Methods and systems for temperature-based metrology calibration at a manufacturing system are provided. First metrology data corresponding to one or more first temperatures associated with a substrate following a completion of one or more portions of a substrate process is identified. An indication of the first metrology data and the first temperature(s) are provided as input to a machine learning (ML) model trained to predict metrology data associated with substrates at a target temperature based on given metrology data associated with substrates at different temperatures. Calibration data is extracted from one or more outputs of the ML model, which includes, for each set of metrology data indicated by the output(s), a level of confidence that a respective set of metrology data corresponds to a target temperature. A set of metrology data satisfying a confidence criterion is identified.
B24B 49/04 - Appareillage de mesure ou de calibrage pour la commande du mouvement d'avance de l'outil de meulage ou de la pièce à meulerAgencements de l'appareillage d'indication ou de mesure, p. ex. pour indiquer le début de l'opération de meulage comparant la cote instantanée de la pièce travaillée à la cote cherchée, la mesure ou le calibrage étant continus ou intermittents impliquant la mesure de la cote de la pièce sur le lieu du meulage pendant l'opération de meulage
C23C 14/54 - Commande ou régulation du processus de revêtement
7.
LINEAR TOOL AND METHOD FOR PARALLEL METALLIZATION OF SOLAR CELL SUBSTRATES
A linear tool for parallel metallization of solar cell substrates is provided. The linear tool includes an alignment system for adjusting a relative position of the first and second solar cell substrate. The linear tool includes a first inspection system for inspecting at least one of the first and second solar cell substrate while the first and second solar cell substrate are held by the alignment system. The linear tool includes a shuttle platform for jointly supporting the first and second solar cell substrate. The shuttle platform is movable from a loading position to a printing position. The linear tool is configured to transfer the first and second solar cell substrate from the alignment system to the shuttle platform when the shuttle platform is in the loading position. The linear tool includes a screen printer configured for parallel metallization of the first and second solar cell substrate.
H10F 71/00 - Fabrication ou traitement des dispositifs couverts par la présente sous-classe
B65G 17/12 - Transporteurs comportant un élément de traction sans fin, p. ex. une chaîne transmettant le mouvement à une surface porteuse de charges continue ou sensiblement continue, ou à une série de porte-charges individuelsTransporteurs à chaîne sans fin dans lesquels des chaînes constituent la surface portant la charge comprenant une série de porte-charges individuels fixés ou normalement fixés à l'élément de traction
8.
SCANNED BEAM DOSE RATE MEASUREMENT FOR ION BEAM OPTIMIZATION
A method of measuring and optimizing dose rate variation in an ion implantation system, the method including generating a scanned beam according to a beam recipe provided to the ion implantation system, moving a profiler head across the scanned beam, the profiler head including a current sensing array including at least one current sensing device adapted to measure a dose rate of the scanned beam for generating a scanned beam profile of the scanned beam, identifying peak current values across the scanned beam profile and deriving a first dose rate profile therefrom, comparing at least one metric associated with the first dose rate profile to at least one corresponding dose rate variation target to determine whether the first dose rate profile is sufficiently uniform, and if the first dose rate profile is not sufficiently uniform, adjusting settings of the beam shaping components so that the scanned beam has a second dose rate profile that is more uniform than the first dose rate profile.
H01J 37/317 - Tubes à faisceau électronique ou ionique destinés aux traitements localisés d'objets pour modifier les propriétés des objets ou pour leur appliquer des revêtements en couche mince, p. ex. implantation d'ions
Surface conditioning processes for semiconductor processing chamber parts are described. The surface conditioning processes can be used to condition a ceramic material surface in a semiconductor processing chamber.
C04B 41/91 - Post-traitement des mortiers, du béton, de la pierre artificielle ou des céramiquesTraitement de la pierre naturelle de céramiques uniquement impliquant l'enlèvement d'une partie des matières des objets traités, p. ex. par attaque chimique
C04B 41/53 - Post-traitement des mortiers, du béton, de la pierre artificielle ou des céramiquesTraitement de la pierre naturelle impliquant l'enlèvement d'une partie des matières de l'objet traité
C04B 35/10 - Produits céramiques mis en forme, caractérisés par leur compositionCompositions céramiquesTraitement de poudres de composés inorganiques préalablement à la fabrication de produits céramiques à base d'oxydes à base d'oxyde d'aluminium
C04B 35/581 - Produits céramiques mis en forme, caractérisés par leur compositionCompositions céramiquesTraitement de poudres de composés inorganiques préalablement à la fabrication de produits céramiques à base de non oxydes à base de borures, nitrures ou siliciures à base de nitrure d'aluminium
C11D 7/26 - Composés organiques contenant de l'oxygène
The present disclosure relates to a polishing head for a chemical mechanical polishing tool. In one embodiment, a polishing head, includes a housing, a perforated plate coupled to the housing, a flexible membrane disposed in the housing, and a retaining ring disposed around the membrane. The perforated plate includes a plurality of apertures disposed through the perforated plate. The plurality of apertures perforate at least 20% of a perforation surface of the perforated plate. The plurality of apertures comprise a first aperture and a second aperture. The flexible membrane and the perforated plate define a chamber. The flexible membrane includes a first surface facing the perforated plate and a second surface opposite the first surface.
B24B 37/20 - Tampons de rodage pour travailler les surfaces planes
B24B 37/26 - Tampons de rodage pour travailler les surfaces planes caractérisés par la forme ou le profil de la surface du tampon de rodage, p. ex. rainurée
Methods and systems for detecting condensation for vapor precursor delivery in a manufacturing system. A flow of a vapor in a vapor delivery line is terminated and one or more pressure measurements of the vapor delivery line are obtained. A vapor quantity is determined based on the one or more pressure measurements. The vapor quantity and a supply pressure of the vapor delivery line are processed using a model that outputs a condensation risk level in the vapor delivery line. Upon determining that the condensation risk level satisfies a condensation risk criterion, an alert indicating detection of a condensate in the vapor delivery line is generated.
C23C 16/52 - Commande ou régulation du processus de dépôt
C23C 16/455 - Revêtement chimique par décomposition de composés gazeux, ne laissant pas de produits de réaction du matériau de la surface dans le revêtement, c.-à-d. procédés de dépôt chimique en phase vapeur [CVD] caractérisé par le procédé de revêtement caractérisé par le procédé utilisé pour introduire des gaz dans la chambre de réaction ou pour modifier les écoulements de gaz dans la chambre de réaction
12.
MODIFYING OPENINGS OF AN EXTREME ULTRAVIOLET MASKING LAYER
A method of modifying an opening in a masking material layer provided on a substrate to achieve desired critical dimensions may include forming a plurality of openings in the masking material layer, and performing one or more ion processes on the masking material layer to enlarge or reduce one or more dimensions of the plurality of openings. A first ion process of the one or more ion processes may include directionally depositing a material layer on the masking material layer by directing a material beam at a first non-zero angle relative to a normal direction extending from a top surface of the masking material layer. A second ion process of the one or more ion processes may include performing an angled ion etch by delivering an ion beam at a second non-zero angle relative to the normal direction extending from the top surface of the masking material layer.
A processing system applicable for use in semiconductor manufacturing, including a chamber. The chamber including a chamber body at least partially defining an internal volume, one or more windows disposed in the internal volume, a substrate support at least partially disposed in the internal volume, one or more heat sources operable to heat the internal volume, and one or more cooling channels. The one or more cooling channels extend at least partially between the one or more heat sources and the one or more windows. The one or more cooling channels are operable to flow a cooling fluid.
Embodiments of the present invention provide a plasma chamber design that allows extremely symmetrical electrical, thermal, and gas flow conductance through the chamber. By providing such symmetry, plasma formed within the chamber naturally has improved uniformity across the surface of a substrate disposed in a processing region of the chamber. Further, other chamber additions, such as providing the ability to manipulate the gap between upper and lower electrodes as well as between a gas inlet and a substrate being processed, allows better control of plasma processing and uniformity as compared to conventional systems.
The present disclosure relates to metrology measurement systems and related methods. In one or more embodiments a measurement system is provided. The measurement system includes a stage operable to retain an object and a light engine disposed above the stage. The light engine includes a light source directed towards the object, a first lens operable to collimate or focus a light from the light source, a reticle tray disposed between the light source and the first lens, and a reticle coupled to a reticle tray. The reticle includes a pattern and an anti-reflective coating disposed on the reticle. The coating is aligned with the pattern.
G03F 7/00 - Production par voie photomécanique, p. ex. photolithographique, de surfaces texturées, p. ex. surfaces impriméesMatériaux à cet effet, p. ex. comportant des photoréservesAppareillages spécialement adaptés à cet effet
Methods and apparatus for substrate processing include: depositing a bulk layer of a dielectric material comprising a metal onto a device attached to a device substrate; depositing a graded layer of the dielectric material with a compositional gradient, onto the bulk layer; and depositing a bonding cap layer of the metal, having a purity of at least 99% by weight, onto the graded layer, wherein the graded layer has a dielectric gradient from substantially dielectric adjacent to the bulk layer to substantially conductive adjacent the bonding cap layer.
There is provided a system and method of attribute selection. The method includes obtaining a first dataset comprising defect candidates, each characterized by a set of attributes and associated with a ground truth label thereof; training a machine learning (ML) model using the first dataset, and estimating, for each attribute, a first significance value based on the trained ML model; generating one or more second datasets based on the first dataset, each second dataset comprising the defect candidates each associated with a synthetic label; retraining the ML model respectively using the one or more second datasets, and estimating, for each attribute, one or more second significance values based on one or more respectively retrained ML models; calculating a normalized significance value for each attribute based on the first significance value and the second significance values; and selecting a subset of attributes based on their normalized significance values.
A gas distribution assembly for a semiconductor processing system includes a longitudinal centerline, a first gas nozzle having a first tubular body having a first gas receiving end and a first gas dispensing end, a gas hub, a plurality of second gas nozzles, each having a second tubular body having a second gas receiving end and a second gas dispensing end, and each of the second gas nozzles having at least a first angular orientation with respect to the longitudinal centerline, and a second angular orientation with respect to the longitudinal centerline different than the first angular orientation.
A mask writing system may include a laser source to generate a laser beam, a multibeam modulator to receive an input laser beam and generate a plurality of modulated laser beams from the input laser beam, a scanner to direct the plurality of modulated laser beams to a mask holder, and a laser beam shaping module, disposed between the laser source and the multibeam modulator. As such, the laser beam shaping module may include a multi-lens system, disposed along a primary beam path. The multi-lens system may include a first lens to receive the laser beam and output a first converging laser beam; a second lens, arranged to receive the first converging laser beam and output a second converging laser beam; and a third lens, arranged to receive the second portion of the laser beam as a diverging beam, and to output a collimated beam to the multibeam modulator.
B23K 26/066 - Mise en forme du faisceau laser, p. ex. à l’aide de masques ou de foyers multiples au moyen d'éléments optiques, p. ex. lentilles, miroirs ou prismes par utilisation de masques
B23K 26/082 - Systèmes de balayage, c.-à-d. des dispositifs comportant un mouvement relatif entre le faisceau laser et la tête du laser
B23K 26/06 - Mise en forme du faisceau laser, p. ex. à l’aide de masques ou de foyers multiples
B23K 26/062 - Mise en forme du faisceau laser, p. ex. à l’aide de masques ou de foyers multiples par commande directe du faisceau laser
G03F 1/76 - Création des motifs d'un masque par imagerie
20.
RAPID TEMPERATURE SWITCHING FOR SUBSTRATE PROCESSING CHAMBERS
A system for performing operations in a processing volume of a processing chamber on a substrate is disclosed herein. The processing chamber includes a substrate support configured to support a substrate. The substrate support has a ESC having a substrate supporting surface and a mounting surface. The substrate support has a base having a top surface wherein the top surface of the base at least partially supports the mounting surface of the ESC. An upper opening extends through the top surface into the base. The substrate support has a LED heater. The LED heater has an upper surface, a lower surface and an outer perimeter. The LED heater has a cooling plate with cooling channels therein. The LED heater has an LED plate disposed on the cooling plate wherein the LED plate has a plurality of LEDs disposed on the top surface of the LED heater.
C23C 16/458 - Revêtement chimique par décomposition de composés gazeux, ne laissant pas de produits de réaction du matériau de la surface dans le revêtement, c.-à-d. procédés de dépôt chimique en phase vapeur [CVD] caractérisé par le procédé de revêtement caractérisé par le procédé utilisé pour supporter les substrats dans la chambre de réaction
C23C 16/48 - Revêtement chimique par décomposition de composés gazeux, ne laissant pas de produits de réaction du matériau de la surface dans le revêtement, c.-à-d. procédés de dépôt chimique en phase vapeur [CVD] caractérisé par le procédé de revêtement par irradiation, p. ex. par photolyse, radiolyse ou rayonnement corpusculaire
21.
LINE CD MODULATION AND END-TO-END CD MANIPULATION WITH ANGLED ETCH & DEPOSITION
Disclosed herein are approaches for line critical dimension (CD) modulation and end-to-end CD reduction with angled etch and angled deposition. One method may include forming a plurality of patterning lines over a stack of layers, wherein each of the patterning lines includes first and second sidewalls. The method may further include delivering one or more reactive plasma beams to the patterning lines at a non-zero angle relative to a perpendicular to a plane defined by an upper surface of the patterning lines, wherein the one or more reactive plasma beams modulate a line CD between a first pair of adjacent patterning lines by performing at least one of the following: an angled etch to remove a material of the patterning lines from the first and second sidewalls, and an angled deposition to form an additional material along the first and second sidewalls.
There is provided a system and method of process window qualification. The method includes obtaining a wafer comprising a plurality of dies respectively printed under a plurality of process window conditions characterized by varying values of focus and exposure, wherein the wafer is fabricated in accordance with a chip design containing a pattern of interest (POI) comprising a surface structure and an underneath structure; inspecting the wafer at POI locations to obtain a plurality of images each capturing an occurrence of the POI; and providing a group of measurements from the plurality of images, comprising, for each given image: extracting a surface contour of the surface structure and an underneath contour of the underneath structure; shifting one of the contours relative to the other one or more times to simulate one or more overlay variations; and measuring a critical metric between the contours following each shift.
H01L 21/66 - Test ou mesure durant la fabrication ou le traitement
G06F 30/20 - Optimisation, vérification ou simulation de l’objet conçu
G06F 30/398 - Vérification ou optimisation de la conception, p. ex. par vérification des règles de conception [DRC], vérification de correspondance entre géométrie et schéma [LVS] ou par les méthodes à éléments finis [MEF]
37 - Services de construction; extraction minière; installation et réparation
Produits et services
Maintenance and repair services for semiconductor processing
and production equipment and components thereof; maintenance
and repair services for semiconductor wafer processing
equipment and components thereof.
42 - Services scientifiques, technologiques et industriels, recherche et conception
Produits et services
Design, development, maintenance, updating, installation,
and implementation of computer software; computer system
design and engineering services; providing online non
downloadable software for monitoring, analyzing,
controlling, and optimizing manufacturing operations and
industrial process performance in the semiconductor
manufacturing industry.
28.
COMBINATORIAL PRECURSOR CHEMISTRY FOR LOW TEMPERATURE
Embodiments of the present disclosure generally relate to the field of semiconductor manufacturing processes, more particularly, to precursor chemistries and methods of depositing silicon-containing films for forming semiconductor devices. In one or more embodiments, a method includes co-flowing a silicon-containing precursor with a dopant precursor into a processing chamber at a temperature of 600° C. or less to deposit an epitaxial layer over a substrate disposed within the processing chamber. The silicon-containing precursor is selected from a list consisting of silane (SiH4), disilane (Si2H6), trisilane(Si3H8), tetrasilane (Si4H10), monochlorotrisilane (Si3H7Cl), diiodosilane (SiH2I2), and dibromosilane (SiH2Br2). The dopant precursor selected from a list consisting of phosphine (PH3), phosphorus trichloride (PCl3), phosphorus tribromide (PBr3), tert-butylphosphine (TBP), tri-tert-butylborane ((tBu)3B), tert-butylarsine (TBAs), arsenic trichloride (AsCl3), trisilylphosphine (TSP), triisopropylborane (iPr)3B, tert-butylsilane ((tBu)SiH3), isopropylsilane ((iPr)SiH3), tetrakis(tert-butyl)tin ((tBu)4Sn), tetrakis(isopropyl)tin ((iPr)4Sn), tetrakis(tert-butyl)germane ((tBu)4Ge), tetrakis(isopropyl)germane ((iPr)4Ge), germanium tetrachloride (GeCl4), carbon tetrachloride (CCl4), and hexachlorodisilane (Si2Cl6).
Exemplary integrated cluster tools may include a factory interface including a first transfer robot. The tools may include a wet clean system coupled with the factory interface at a first side of the wet clean system. The tools may include a load lock chamber coupled with the wet clean system at a second side of the wet clean system opposite the first side of the wet clean system. The tools may include a first transfer chamber coupled with the load lock chamber. The first transfer chamber may include a second transfer robot. The tools may include a second transfer chamber coupled with the first transfer chamber. The second transfer chamber may include a third transfer robot. The tools may include a metal deposition chamber coupled with the transfer chamber.
Semiconductor devices and methods of manufacturing the same are described. The method includes forming distinct and separate bottom dielectric isolation layers underneath the source/drain and underneath the gate of a gate all around device. Selectively remove of the bottom dielectric isolation layer underneath the source/drain results in better backside power rail (BPR) via alignment to the source/drain epi and reduces reliability and gate-shorting problems.
H10D 30/43 - Transistors FET ayant des canaux à gaz de porteurs de charge de dimension nulle [0D], à une dimension [1D] ou à deux dimensions [2D] ayant des canaux à gaz de porteurs de charge à une dimension, p. ex. transistors FET à fil quantique ou transistors ayant des canaux à confinement quantique à une dimension
A system includes a substrate support configured to support and rotate a substrate a sensor positioned above the substrate support. Control logic causes the sensor to generate a images of an area of the substrate support and a portion of the substrate in a field of view of the sensor during rotation of the substrate support. Control logic performs edge detection by intensity-thresholding the images to identify a first edge of the substrate and a second edge of the substrate support. Control logic generates data representing a gap distance between the first and second edges and determines, from the data, a magnitude and a direction of an offset between a first center of the substrate support and a second center of the substrate. Control logic converts the offset to coordinates within a coordinate system of a robot and provides the coordinates to the robot.
An ion implanter is provided, including an ion source and extraction system, arranged to generate a continuous ion beam at a first ion energy, and a linear accelerator, arranged to generate a bunched ion beam from the continuous ion beam, and to accelerate the bunched ion beam to a second ion energy, greater than the first ion energy. As such, the linear accelerator may include a plurality of acceleration stages, where a given acceleration stage of the linear accelerator includes a drift tube assembly, arranged to accelerate the bunched ion beam through a plurality of acceleration gaps. The given acceleration stage may also include a resonator, arranged to deliver an RF voltage signal to the drift tube assembly, and a resonance control circuit, having a variable capacitor that is arranged to adjust a resonator capacitance of the resonator, in order to maintain a resonant frequency of the resonator circuit.
H01J 37/317 - Tubes à faisceau électronique ou ionique destinés aux traitements localisés d'objets pour modifier les propriétés des objets ou pour leur appliquer des revêtements en couche mince, p. ex. implantation d'ions
H05H 9/04 - Accélérateurs linéaires à ondes stationnaires
33.
COOLING ARRANGEMENTS FOR PROCESSING SYSTEMS, CHAMBERS, AND RELATED METHODS TO MODIFY SUBSTRATE TEMPERATURE PROFILES
A processing system applicable for use in semiconductor manufacturing, including a chamber. The chamber including a chamber body at least partially defining an internal volume, one or more windows disposed in the internal volume, a substrate support at least partially disposed in the internal volume, one or more heat sources operable to heat the internal volume, and one or more cooling channels. The one or more cooling channels extend at least partially between the one or more heat sources and the one or more windows. The one or more cooling channels are operable to flow a cooling fluid.
C30B 25/10 - Chauffage de l'enceinte de réaction ou du substrat
C23C 16/458 - Revêtement chimique par décomposition de composés gazeux, ne laissant pas de produits de réaction du matériau de la surface dans le revêtement, c.-à-d. procédés de dépôt chimique en phase vapeur [CVD] caractérisé par le procédé de revêtement caractérisé par le procédé utilisé pour supporter les substrats dans la chambre de réaction
C23C 16/46 - Revêtement chimique par décomposition de composés gazeux, ne laissant pas de produits de réaction du matériau de la surface dans le revêtement, c.-à-d. procédés de dépôt chimique en phase vapeur [CVD] caractérisé par le procédé de revêtement caractérisé par le procédé utilisé pour le chauffage du substrat
The present disclosure relates to a polishing head for a chemical mechanical polishing tool. In one embodiment, a polishing head, includes a housing, a perforated plate coupled to the housing, a flexible membrane disposed in the housing, and a retaining ring disposed around the membrane. The perforated plate includes a plurality of apertures disposed through the perforated plate. The plurality of apertures perforate at least 20% of a perforation surface of the perforated plate. The plurality of apertures comprise a first aperture and a second aperture. The flexible membrane and the perforated plate define a chamber. The flexible membrane includes a first surface facing the perforated plate and a second surface opposite the first surface.
B24B 37/26 - Tampons de rodage pour travailler les surfaces planes caractérisés par la forme ou le profil de la surface du tampon de rodage, p. ex. rainurée
B24B 37/24 - Tampons de rodage pour travailler les surfaces planes caractérisés par la composition ou les propriétés des matériaux du tampon
A mask writing system may include a laser source to generate a laser beam, a multibeam modulator to receive an input laser beam and generate a plurality of modulated laser beams from the input laser beam, a scanner to direct the plurality of modulated laser beams to a mask holder, and a laser beam shaping module, disposed between the laser source and the multibeam modulator. As such, the laser beam shaping module may include a multi-lens system, disposed along a primary beam path. The multi-lens system may include a first lens to receive the laser beam and output a first converging laser beam; a second lens, arranged to receive the first converging laser beam and output a second converging laser beam; and a third lens, arranged to receive the second portion of the laser beam as a diverging beam, and to output a collimated beam to the multibeam modulator.
B23K 26/06 - Mise en forme du faisceau laser, p. ex. à l’aide de masques ou de foyers multiples
B23K 26/066 - Mise en forme du faisceau laser, p. ex. à l’aide de masques ou de foyers multiples au moyen d'éléments optiques, p. ex. lentilles, miroirs ou prismes par utilisation de masques
B23K 26/082 - Systèmes de balayage, c.-à-d. des dispositifs comportant un mouvement relatif entre le faisceau laser et la tête du laser
36.
SUBSTRATE PROPERTY CONTROL USING DOSE-DEPENDENT RESPONSE
A method of managing a property of a substrate is provided. The method may include selecting an implant recipe according to a set of criteria for processing the substrate. The method may further include measuring a dose saturation curve for the implant recipe, determining an implant procedure based upon the implant recipe and the dose saturation curve; and implementing the implant procedure in the substrate using a processing system.
H01J 37/317 - Tubes à faisceau électronique ou ionique destinés aux traitements localisés d'objets pour modifier les propriétés des objets ou pour leur appliquer des revêtements en couche mince, p. ex. implantation d'ions
H01J 37/304 - Commande des tubes par une information en provenance des objets, p. ex. signaux de correction
37.
PROCESS WINDOW QUALIFICATION FOR A PATTERNING PROCESS
There is provided a system and method of process window qualification. The method includes obtaining a wafer comprising a plurality of dies respectively printed under a plurality of process window conditions characterized by varying values of focus and exposure, wherein the wafer is fabricated in accordance with a chip design containing a pattern of interest (POI) comprising a surface structure and an underneath structure; inspecting the wafer at POI locations to obtain a plurality of images each capturing an occurrence of the POI; and providing a group of measurements from the plurality of images, comprising, for each given image: extracting a surface contour of the surface structure and an underneath contour of the underneath structure; shifting one of the contours relative to the other one or more times to simulate one or more overlay variations; and measuring a critical metric between the contours following each shift.
G03F 7/00 - Production par voie photomécanique, p. ex. photolithographique, de surfaces texturées, p. ex. surfaces impriméesMatériaux à cet effet, p. ex. comportant des photoréservesAppareillages spécialement adaptés à cet effet
38.
METHOD OF DETECTING WAFER LOSS IN CHEMICAL MECHANICAL POLISHER
A substrate polishing apparatus includes a substrate carrier for urging a substrate against a polishing pad. The substrate carrier has a carrier head, a retaining ring, and a flexible membrane in contact with the substrate. A drive system is used to drive the substrate carrier. The apparatus also includes a displacement sensor coupled to the drive system for measuring a distance to the carrier head.
B24B 37/30 - Supports de pièce pour rodage simple face de surfaces planes
B24B 37/005 - Moyens de commande pour machines ou dispositifs de rodage
B24B 49/10 - Appareillage de mesure ou de calibrage pour la commande du mouvement d'avance de l'outil de meulage ou de la pièce à meulerAgencements de l'appareillage d'indication ou de mesure, p. ex. pour indiquer le début de l'opération de meulage impliquant des dispositifs électriques
B24B 49/12 - Appareillage de mesure ou de calibrage pour la commande du mouvement d'avance de l'outil de meulage ou de la pièce à meulerAgencements de l'appareillage d'indication ou de mesure, p. ex. pour indiquer le début de l'opération de meulage impliquant des dispositifs optiques
H01L 21/306 - Traitement chimique ou électrique, p. ex. gravure électrolytique
39.
SELECTIVE ETCHING BETWEEN SILICON-CONTAINING MATERIALS AND SILICON-AND-GERMANIUM-CONTAINING MATERIALS WITH VARYING GERMANIUM CONCENTRATION
Exemplary semiconductor processing methods may include providing a fluorine-containing precursor and a nitrogen-containing precursor to a processing region of a semiconductor processing chamber. A substrate may be housed within the processing region. A silicon-containing material and a silicon-and-germanium-containing material may be disposed on the substrate. The methods may include contacting the substrate with the fluorine-containing precursor and the nitrogen-containing precursor. The contacting may etch the silicon-containing material relative to the silicon-and-germanium-containing material at a selectivity of greater than or about 15:1.
H01L 21/3065 - Gravure par plasmaGravure au moyen d'ions réactifs
H01L 21/02 - Fabrication ou traitement des dispositifs à semi-conducteurs ou de leurs parties constitutives
H01L 21/3213 - Gravure physique ou chimique des couches, p. ex. pour produire une couche avec une configuration donnée à partir d'une couche étendue déposée au préalable
40.
MAGNETO-OPTICAL CHEMICAL SENSORS FOR PROCESS CHAMBERS
Magneto-optical sensors for process or process chamber condition monitoring are described. In an example, a system includes a process chamber. The system also includes a laser source to provide a laser beam having an initial polarization, the laser beam to be directed through a first polarizer and then into the process chamber. The system also includes a magnet surrounding the process chamber, the magnet to provide a Faraday rotation of the laser beam, the laser beam to exit the process chamber and enter a second polarizer and then a detector to provide a detected polarization rotation for lock-in detection.
G01N 21/39 - CouleurPropriétés spectrales, c.-à-d. comparaison de l'effet du matériau sur la lumière pour plusieurs longueurs d'ondes ou plusieurs bandes de longueurs d'ondes différentes en recherchant l'effet relatif du matériau pour les longueurs d'ondes caractéristiques d'éléments ou de molécules spécifiques, p. ex. spectrométrie d'absorption atomique en utilisant des lasers à longueur d'onde réglable
G01N 21/71 - Systèmes dans lesquels le matériau analysé est excité de façon à ce qu'il émette de la lumière ou qu'il produise un changement de la longueur d'onde de la lumière incidente excité thermiquement
G01N 21/17 - Systèmes dans lesquels la lumière incidente est modifiée suivant les propriétés du matériau examiné
41.
GROWTH OF GATE OXIDE LAYER WITH SILICON NITRIDE AND CONVERSION
A method for forming an oxide layer includes forming at least a portion of a gate oxide layer on inner surfaces of an opening, forming a silicon nitride capping layer on the portion of the gate oxide layer, and performing a conversion process to at least partially oxidize the silicon nitride capping layer, forming a nitrogen-doped gate oxide layer.
C23C 16/455 - Revêtement chimique par décomposition de composés gazeux, ne laissant pas de produits de réaction du matériau de la surface dans le revêtement, c.-à-d. procédés de dépôt chimique en phase vapeur [CVD] caractérisé par le procédé de revêtement caractérisé par le procédé utilisé pour introduire des gaz dans la chambre de réaction ou pour modifier les écoulements de gaz dans la chambre de réaction
42.
SYSTEM AND METHOD FOR RESONATOR TUNING USING VARIABLE CAPACITOR
An ion implanter is provided, including an ion source and extraction system, arranged to generate a continuous ion beam at a first ion energy, and a linear accelerator, arranged to generate a bunched ion beam from the continuous ion beam, and to accelerate the bunched ion beam to a second ion energy, greater than the first ion energy. As such, the linear accelerator may include a plurality of acceleration stages, where a given acceleration stage of the linear accelerator includes a drift tube assembly, arranged to accelerate the bunched ion beam through a plurality of acceleration gaps. The given acceleration stage may also include a resonator, arranged to deliver an RF voltage signal to the drift tube assembly, and a resonance control circuit, having a variable capacitor that is arranged to adjust a resonator capacitance of the resonator, in order to maintain a resonant frequency of the resonator circuit.
H01J 37/317 - Tubes à faisceau électronique ou ionique destinés aux traitements localisés d'objets pour modifier les propriétés des objets ou pour leur appliquer des revêtements en couche mince, p. ex. implantation d'ions
H05H 7/22 - Détails d'accélérateurs linéaires, p. ex. tubes de glissement
H01J 37/248 - Composants associés à l'alimentation haute tension
Described herein are embodiments related to a chamber and method for cleaning herein including a dual gas line system. The chamber includes a first input line including a first outlet positioned within the chamber to output a first gas stream and a second input line including a second outlet positioned within the chamber to output a second gas stream. The first input gas line and the second input gas line are coaxial to each other, and the outlets directly face each other.
A system includes a substrate support configured to support and rotate a substrate a sensor positioned above the substrate support. Control logic causes the sensor to generate a images of an area of the substrate support and a portion of the substrate in a field of view of the sensor during rotation of the substrate support. Control logic performs edge detection by intensity-thresholding the images to identify a first edge of the substrate and a second edge of the substrate support. Control logic generates data representing a gap distance between the first and second edges and determines, from the data, a magnitude and a direction of an offset between a first center of the substrate support and a second center of the substrate. Control logic converts the offset to coordinates within a coordinate system of a robot and provides the coordinates to the robot.
G06T 7/73 - Détermination de la position ou de l'orientation des objets ou des caméras utilisant des procédés basés sur les caractéristiques
G06T 7/62 - Analyse des attributs géométriques de la superficie, du périmètre, du diamètre ou du volume
G06T 3/4007 - Changement d'échelle d’images complètes ou de parties d’image, p. ex. agrandissement ou rétrécissement basé sur l’interpolation, p. ex. interpolation bilinéaire
45.
COUPLER FOR A SLIT VALVE GATE HAVING A ROTATABLE JOINT
A slit valve coupler includes a first interface component configured to couple to a slit valve actuator and a second interface component configured to couple to a slit valve gate. The slit valve coupler further includes a cross-shaped member at least partially forming a rotatable joint between the first interface component and the second interface component. The slit valve coupler further includes one or more clamp members configured to couple the first interface component to the second interface component and to apply a clamping force to the cross-shaped member disposed between the first interface component and the second interface component. The second interface component is configured to self-align, via the rotatable joint, the slit valve gate with respect to a sealing surface of a slit valve opening responsive to a threshold closing force provided by the slit valve actuator.
Embodiments described herein provide a method of forming an optical device structures comprising disposing a grating material layer over a plurality of blazed structures formed over a substrate, depositing a photoresist layer over the grating material layer, patterning the photoresist layer to form a patterned photoresist over the grating material layer, and etching the grating material layer according to a pattern of the patterned photoresist to form a plurality of slanted device structures disposed between the plurality of blazed structures and the patterned photoresist.
Embodiments herein provide a method for forming an interconnect structure, comprising: depositing a barrier layer over one or more surfaces of a feature formed in a surface of a substrate, wherein the barrier layer comprises manganese, and the one or more surfaces of the feature comprise one or more sidewall surfaces and a bottom surface; depositing a liner layer over the barrier layer, wherein the liner layer comprises ruthenium; and filling the feature with an interconnect material, wherein filling the feature comprises depositing the interconnect material on the deposited liner layer.
Magneto-optical sensors for process or process chamber condition monitoring are described. In an example, a system includes a process chamber. The system also includes a laser source to provide a laser beam having an initial polarization, the laser beam to be directed through a first polarizer and then into the process chamber. The system also includes a magnet surrounding the process chamber, the magnet to provide a Faraday rotation of the laser beam, the laser beam to exit the process chamber and enter a second polarizer and then a detector to provide a detected polarization rotation for lock-in detection.
A method of measuring and optimizing dose rate variation in an ion implantation system, the method including generating a scanned beam according to a beam recipe provided to the ion implantation system, moving a profiler head across the scanned beam, the profiler head including a current sensing array including at least one current sensing device adapted to measure a dose rate of the scanned beam for generating a scanned beam profile of the scanned beam, identifying peak current values across the scanned beam profile and deriving a first dose rate profile therefrom, comparing at least one metric associated with the first dose rate profile to at least one corresponding dose rate variation target to determine whether the first dose rate profile is sufficiently uniform, and if the first dose rate profile is not sufficiently uniform, adjusting settings of the beam shaping components so that the scanned beam has a second dose rate profile that is more uniform than the first dose rate profile.
H01J 37/317 - Tubes à faisceau électronique ou ionique destinés aux traitements localisés d'objets pour modifier les propriétés des objets ou pour leur appliquer des revêtements en couche mince, p. ex. implantation d'ions
H01J 37/304 - Commande des tubes par une information en provenance des objets, p. ex. signaux de correction
50.
SURFACE CONDITIONING PROCESSES FOR SEMICONDUCTOR PROCESSING CHAMBER PARTS
Surface conditioning processes for semiconductor processing chamber parts are described. The surface conditioning processes can be used to condition a ceramic material surface in a semiconductor processing chamber.
H01L 21/67 - Appareils spécialement adaptés pour la manipulation des dispositifs à semi-conducteurs ou des dispositifs électriques à l'état solide pendant leur fabrication ou leur traitementAppareils spécialement adaptés pour la manipulation des plaquettes pendant la fabrication ou le traitement des dispositifs à semi-conducteurs ou des dispositifs électriques à l'état solide ou de leurs composants
C23C 16/44 - Revêtement chimique par décomposition de composés gazeux, ne laissant pas de produits de réaction du matériau de la surface dans le revêtement, c.-à-d. procédés de dépôt chimique en phase vapeur [CVD] caractérisé par le procédé de revêtement
H01L 21/302 - Traitement des corps semi-conducteurs en utilisant des procédés ou des appareils non couverts par les groupes pour changer leurs caractéristiques physiques de surface ou leur forme, p. ex. gravure, polissage, découpage
51.
Modifying Openings of an Extreme Ultraviolet Masking Layer
A method of modifying an opening in a masking material layer provided on a substrate to achieve desired critical dimensions may include forming a plurality of openings in the masking material layer, and performing one or more ion processes on the masking material layer to enlarge or reduce one or more dimensions of the plurality of openings. A first ion process of the one or more ion processes may include directionally depositing a material layer on the masking material layer by directing a material beam at a first non-zero angle relative to a normal direction extending from a top surface of the masking material layer. A second ion process of the one or more ion processes may include performing an angled ion etch by delivering an ion beam at a second non-zero angle relative to the normal direction extending from the top surface of the masking material layer.
Disclosed herein are approaches for line critical dimension (CD) modulation and end-to-end CD reduction with angled etch and angled deposition. One method may include forming a plurality of patterning lines over a stack of layers, wherein each of the patterning lines includes first and second sidewalls. The method may further include delivering one or more reactive plasma beams to the patterning lines at a non-zero angle relative to a perpendicular to a plane defined by an upper surface of the patterning lines, wherein the one or more reactive plasma beams modulate a line CD between a first pair of adjacent patterning lines by performing at least one of the following: an angled etch to remove a material of the patterning lines from the first and second sidewalls, and an angled deposition to form an additional material along the first and second sidewalls.
H01L 21/033 - Fabrication de masques sur des corps semi-conducteurs pour traitement photolithographique ultérieur, non prévue dans le groupe ou comportant des couches inorganiques
A method including receiving, by a processing device, first data characterizing a film on a surface of a substrate processed within a recess of a sensor assembly positioned in a first region of a processing chamber. The processed surface of the film corresponds to a substrate processing procedure. The method further includes determining, based on the first data, a rate of advancement of a first processed surface boundary of the film across the surface of the substrate. The method further includes determining, using the rate of advancement, a dosage strength of a reactive species delivered to the first region of the processing. The method may further include preparing an indication of the dosage strength for presentation on a graphical user interface (GUI). The method may further include altering an operation of the processing chamber based on the dosage strength.
C23C 16/458 - Revêtement chimique par décomposition de composés gazeux, ne laissant pas de produits de réaction du matériau de la surface dans le revêtement, c.-à-d. procédés de dépôt chimique en phase vapeur [CVD] caractérisé par le procédé de revêtement caractérisé par le procédé utilisé pour supporter les substrats dans la chambre de réaction
C23C 16/46 - Revêtement chimique par décomposition de composés gazeux, ne laissant pas de produits de réaction du matériau de la surface dans le revêtement, c.-à-d. procédés de dépôt chimique en phase vapeur [CVD] caractérisé par le procédé de revêtement caractérisé par le procédé utilisé pour le chauffage du substrat
54.
SPUTTER DEPOSITION SOURCE, MAGNETRON SPUTTER CATHODE, AND METHOD OF DEPOSITING A MATERIAL ON A SUBSTRATE
A sputter deposition source for depositing a material on a substrate is described. The sputter deposition source includes an array of magnetron sputter cathodes arranged in a row for coating the substrate in a deposition area on a front side of the array. At least one magnetron sputter cathode of the array includes a first rotary target rotatable around a first rotation axis (A1); and a first magnet assembly arranged in the first rotary target and configured to provide a closed plasma racetrack (P) on a surface of the first rotary target that extends along the first rotation axis (A1) on a first side and on a second side of the at least one magnetron sputter cathode. Further described is a magnetron sputter cathode for a sputter deposition source and a method of depositing a material on a substrate.
A substrate support assembly includes a substrate support that is moveable between a raised position, a lowered position below the raised position, and an intermediate position between the raised and lowered positions. A lift pin is disposed in a hole through the substrate support, and is movable vertically with respect to the substrate support. In use, the substrate support assembly transitions between first and second configurations. In the first configuration, the substrate support and the lift pin are coupled such that the lift pin and the substrate support move simultaneously while the substrate support moves between the lowered position and the intermediate position. In the second configuration, the substrate support and the lift pin are decoupled such that the lift pin remains stationary while the substrate support moves between the intermediate position and the raised position.
A wafer inspection tool including: an illumination system providing ultraviolet illumination light with wavelengths 2 below 300 nm and configured to direct light towards an object to be inspected; a detector array having a pixel pitch; one or more anti-aliasing (AA) elements; an objective having a numerical aperture (NA) and configured to collect light provided by the illumination system and returning from a plurality of field points on the object and to onwardly transmit a light beam formed from the returning light which has been collected towards the detector array via the one or more AA elements; a processor configured to: receive imaging requirements; control a NA of the objective; control, when the pixel pitch is larger than λ/(4*NA), position of the one or more anti-aliasing elements, based on the pixel pitch, the NA, and the imaging requirements.
A polarizing beam manipulation unit, that includes: (i) a polarizing beam splitter that exhibits polarization extinction ratios that are based on angles of impingement of rays of radiation; and (ii) a telecentric lens that precedes the polarization beam splitter and is configured to: (a) receive a non-collimated input beam that comprises rays of different angles of impingement, and (b) convert the non-collimated input beam to a collimated input beam that comprises rays that are parallel to each other when impinging on the polarization beam splitter.
The present disclosure provides radio frequency (RF) return devices and processing chambers thereof. The RF devices include a bracket mechanically coupled to a substrate support, a first mounting plate, and a mounting base. A cover plate is mechanically coupled to the first mounting plate and the mounting base. A base plate is disposed over the mounting base. A plurality of stacking plates is disposed between the first mounting plate and the base plate. A strap is mechanically coupled to the mounting base. A second mounting base is mechanically coupled to the strap
A semiconductor processing chamber is disclosed herein. The semiconductor processing chamber includes a monolithic lower shell that has a substrate support having a top surface and a bottom surface, a sidewall disposed around the substrate support, a plurality of arms extending radially and symmetric inward from the sidewall to the substrate support, a plurality of passages symmetrically disposed around the substrate support, and a pumping plenum fluidly coupled to the plurality of passages. The pumping plenum is partially bounded by the bottom surface of the substrate support and a lower extension of the sidewall. The sidewall includes the lower extension extending past the bottom surface of the substrate support. Each passage of the plurality of passages is defined between the substrate support, two adjacent arms of the plurality of arms, and the sidewall.
Methods and apparatus for processing a substrate using a plasma processing assembly. One example plasma processing assembly includes a processing chamber including a processing region, a plasma screen disposed within the processing region that forms a first region of the processing region and a second region of the processing region, a substrate support assembly disposed within the processing region, and a field generation system. The field generation system generally includes a first coil assembly including one or more first coils, where the one or more first coils are aligned in a first direction and at least partially encircle the processing region and where the first coil assembly is disposed inside the first region, and a second coil assembly including one or more second coils, where the one or more second coils at least partially encircle the processing region and the second coil assembly is disposed inside the second region.
A method for forming an oxide layer includes forming at least a portion of a gate oxide layer on inner surfaces of an opening, forming a silicon nitride capping layer on the portion of the gate oxide layer, and performing a conversion process to at least partially oxidize the silicon nitride capping layer, forming a nitrogen-doped gate oxide layer.
C23C 16/455 - Revêtement chimique par décomposition de composés gazeux, ne laissant pas de produits de réaction du matériau de la surface dans le revêtement, c.-à-d. procédés de dépôt chimique en phase vapeur [CVD] caractérisé par le procédé de revêtement caractérisé par le procédé utilisé pour introduire des gaz dans la chambre de réaction ou pour modifier les écoulements de gaz dans la chambre de réaction
C23C 16/04 - Revêtement de parties déterminées de la surface, p. ex. au moyen de masques
Described is selective deposition of a silicon nitride (SiN) trap layer to form a memory device. A sacrificial layer is used for selective deposition in order to permit selective trap deposition. The trap layer is formed by deposition of a mold including a sacrificial layer, memory hole (MH) patterning, sacrificial layer recess from MH side, forming a deposition-enabling layer (DEL) on a side of the recess, and selective deposition of trap layer. After removing the sacrificial layer from a slit pattern opening, the deposition-enabling layer (DEL) is converted into an oxide to be used as blocking oxide.
H10B 43/27 - Dispositifs EEPROM avec des isolants de grille à piégeage de charge caractérisés par les agencements tridimensionnels, p. ex. avec des cellules à des niveaux différents de hauteur la région de source et la région de drain étant à différents niveaux, p. ex. avec des canaux inclinés les canaux comprenant des parties verticales, p. ex. des canaux en forme de U
H10D 30/69 - Transistors IGFET ayant des isolateurs de grille à piégeage de charges, p. ex. transistors MNOS
A carrier includes fingers configured to support a process kit ring and one or more protrusions that extend past a perimeter of a carrier body portion of the carrier and are configured to be disposed proximate a flat inner surface of the process kit ring to prevent rotation of the process kit ring.
B25J 19/00 - Accessoires adaptés aux manipulateurs, p. ex. pour contrôler, pour observerDispositifs de sécurité combinés avec les manipulateurs ou spécialement conçus pour être utilisés en association avec ces manipulateurs
B25J 15/08 - Têtes de préhension avec des éléments en forme de doigts
Methods and systems for process chamber qualification for maintenance process endpoint detection are provided. Sensor data collected by sensors of manufacturing equipment of a manufacturing system during performance of one or more initial maintenance operations of a maintenance process is obtained. The obtained sensor data is provided as an input to a machine learning (ML) model and one or more outputs of the ML model are obtained. The output(s) include a current state of the manufacturing equipment based on the performance of the initial maintenance operation(s). The current state represents a distance between the obtained sensor data and target sensor data associated with a final maintenance operation of the maintenance process. A set of subsequent maintenance operations of the maintenance process is determined based on the current state of the manufacturing equipment. Performance of the set of subsequent maintenance operations at the manufacturing equipment is initiated.
Described herein are embodiments related to a chamber and method for cleaning herein including a dual gas line system. The chamber includes a first input line including a first outlet positioned within the chamber to output a first gas stream and a second input line including a second outlet positioned within the chamber to output a second gas stream. The first input gas line and the second input gas line are coaxial to each other, and the outlets directly face each other.
B08B 9/093 - Nettoyage de récipients, p. ex. de réservoirs par la force de jets ou de pulvérisations
B08B 13/00 - Accessoires ou parties constitutives, d'utilisation générale, des machines ou appareils de nettoyage
H01L 21/67 - Appareils spécialement adaptés pour la manipulation des dispositifs à semi-conducteurs ou des dispositifs électriques à l'état solide pendant leur fabrication ou leur traitementAppareils spécialement adaptés pour la manipulation des plaquettes pendant la fabrication ou le traitement des dispositifs à semi-conducteurs ou des dispositifs électriques à l'état solide ou de leurs composants
67.
PLASMA UNIFORMITY CONTROL SYSTEM AND METHODS FOR PROCESSING A SEMICONDUCTOR SUBSTRATE
Methods and apparatus for processing a substrate using a plasma processing assembly. One example plasma processing assembly includes a processing chamber including a processing region, a plasma screen disposed within the processing region that forms a first region of the processing region and a second region of the processing region, a substrate support assembly disposed within the processing region, and a field generation system. The field generation system generally includes a first coil assembly including one or more first coils, where the one or more first coils are aligned in a first direction and at least partially encircle the processing region and where the first coil assembly is disposed inside the first region, and a second coil assembly including one or more second coils, where the one or more second coils at least partially encircle the processing region and the second coil assembly is disposed inside the second region.
A drift tube assembly including a drift tube having a cylindrical main body and a mounting cuff extending from the main body and defining a mounting socket. A mounting device is disposed within the mounting socket and includes an inner sleeve having a tapered exterior surface, a tubular outer sleeve surrounding the inner sleeve and having a tapered interior surface engaging the exterior surface of the inner sleeve, and a nut surrounding the outer and inner sleeves and including a flange extending into a groove formed in an exterior of the outer sleeve, the nut threadedly engaging a threaded portion of the exterior surface of the inner sleeve. A mounting rod extends into a passthrough of the inner sleeve of the mounting device. Tightening the nut causes the inner sleeve to tighten against the mounting rod and causes the outer sleeve to tighten against the mounting cuff.
An optical system (100) for analyzing a diffuser (104) comprises an optical sensor (112) coupled to a support structure (106), wherein the optical sensor (112) comprises a lens assembly (114) operable to provide an image of one or more openings of a plurality of openings (102) of the diffuser (104). The optical system (100) further includes a plurality of alignment plates (120) positionable over the diffuser (104), wherein each of the plurality of alignment plates (120) comprises a plurality of main openings (138) arranged between a first end (140) and a second end (141), wherein each of the plurality of main openings (138) is positioned over a set of openings of the plurality of openings (102) of the diffuser (104), and wherein a base (108) of the support structure (106) is positionable directly atop the plurality of alignment plates (120). An optical system (100) for analyzing a plurality of openings (102) of a diffuser (104) and a portable optical system (100) are also provided.
Exemplary etching methods may include providing an oxygen-containing precursor to a processing region of a semiconductor processing chamber. A substrate may be housed within the processing region. A metal-and-carbon-containing material may be disposed on the substrate. The methods may include contacting the substrate with the oxygen-containing precursor. The contacting the substrate may oxidize at least a portion of the metal-and-carbon-containing material to form a metal-and-oxygen-containing material. The methods may include providing a halogen-containing precursor to the processing region of the semiconductor processing chamber. The methods may include contacting the metal-and-oxygen-containing material with the halogen-containing precursor. The contacting the metal-and-oxygen-containing material may etch the metal-and-oxygen-containing material.
A method for in-situ inspection of a plurality of layers deposited on a substrate in a vacuum deposition system is described. The method includes: (1a) moving the substrate (10) and a first edge exclusion shield (100) past a first deposition source (51) to deposit a first material layer on the substrate, wherein the first edge exclusion shield (100) is moved in front of the substrate (10) on a first shield track (12) so that a first shielded region (121) of the substrate is shielded by the first edge exclusion shield (100); (1b) inspecting the first material layer (31); (2a) moving the substrate (10) and a second edge exclusion shield (100') past a second deposition source (52) to deposit a second material layer (32) on the substrate at least partially over the first material layer (31), wherein the second edge exclusion shield (100') is moved in front of the substrate (10) so that a second shielded region (122) of the substrate is shielded by the second edge exclusion shield (100'), the second shielded region being displaced relative to the first shielded region toward a first substrate edge (131) to expose a first substrate area (125) that is free of the first material layer; and (2b) inspecting the second material layer in the first substrate area (125). Further, a vacuum deposition system configured to carry out the in-situ inspection method is described.
H10K 71/16 - Dépôt d'une matière active organique en utilisant un dépôt physique en phase vapeur [PVD], p. ex. un dépôt sous vide ou une pulvérisation cathodique
A flow swirler comprising a first flow channel, defined by a first cylindrical wall, for first fluid flow, wherein a first end of the first cylindrical wall is arranged in the form of a swirl-inducing pattern, the swirl-inducing pattern comprising a plurality of bent-shaped swirl blades in a repeating pattern to induce swirling to the first fluid flow to generate swirl flow.
B01F 23/43 - Mélange de liquides avec des liquidesÉmulsion en utilisant des agitateurs entraînés
B01F 27/2323 - Mélangeurs à agitateurs tournant dans des récipients fixesPétrins caractérisés par l'orientation ou la disposition de l'axe du rotor avec plusieurs axes de rotation avec des axes perpendiculaires
B01F 27/80 - Mélangeurs à agitateurs tournant dans des récipients fixesPétrins avec des agitateurs tournant autour d'un axe sensiblement vertical
73.
PECVD HBN FILM ENGINEERING FOR INTER METAL DIELECTRIC IN 3D SEMICONDUCTOR DEVICES
Embodiments described herein generally relate to semiconductor devices. More specifically, embodiments described herein relate to the production of films with high thermal conductivity and low dielectric constants for use in 3D semiconductor device packages. In at least one embodiment, a 3D integrated circuit is provided. The 3D integrated circuit includes at least one inter metal dielectric layer disposed between two metal interconnect layers. The inter metal dielectric layer includes a hexagonal boron nitride film having a dielectric constant of less than or about 5.0 and a specific conductivity of about 10 W/(mK) or greater. The 3D integrated circuit further includes a via disposed through the hexagonal boron nitride film, electrically connecting the two metal layers.
A method for depositing silicon nitride (SiN) films within high aspect ratio (HAR) features with a reduced number of deposition cycles is provided. The method includes depositing three layers, for example, a silicon seed/silicon nitride/ a silicon cap. The silicon seed and cap layers demonstrate improved bottom deposition performance with minimum sidewall and top deposition relative to silicon nitride. The silicon seed layer fills a portion of the HAR feature thus reducing the number of silicon nitride cycles needed to fill the HAR feature to targeted levels. The silicon cap layer protects the deposited silicon nitride during subsequent etching processes, which are performed to remove silicon nitride material formed on sidewalls and top surface of the feature.
Embodiments of the present disclosure relate to fast scanning acoustic microscopy for subsurface imaging and inspection. For example, a system may include at least one processing device configured to perform operations including initiating imaging of a sample using an acoustic microscope, and causing the sample to be scanned at a radial distance relative to a center position of the sample to perform the imaging of the sample. The sample is located on a stage, and the stage rotates at a rotational speed determined based on the radial distance.
An embodiment of a gas confiner for a substrate processing chamber. The gas confiner includes a body having a pair of major sides and a pair of minor sides, wherein the pair of minor sides are shorter than the pair of major sides. In addition, the body includes an outer edge extending along the pair of major sides and the pair of minor sides and an inner edge extending along the pair of major sides and the pair of minor sides. Further, the body includes an opening through the body defined by the inner edge. A thickness of the body is different along the pair of major sides than along the pair of minor sides.
H10K 71/00 - Fabrication ou traitement spécialement adaptés aux dispositifs organiques couverts par la présente sous-classe
H10K 71/16 - Dépôt d'une matière active organique en utilisant un dépôt physique en phase vapeur [PVD], p. ex. un dépôt sous vide ou une pulvérisation cathodique
Embodiments of the present disclosure generally relate to augmented reality systems. More specifically, embodiments described herein provide for a waveguide with at least one ophthalmic lens, an augmented reality system, a method of fabricating waveguides with ophthalmic lenses, and an assembly for fabricating waveguides with ophthalmic lenses are shown and described herein.
G02B 1/04 - Éléments optiques caractérisés par la substance dont ils sont faitsRevêtements optiques pour éléments optiques faits de substances organiques, p. ex. plastiques
A computerized system for layer separation for e-beam overlay metrology that includes a processing and memory circuitry (PMC) configured to generate an X-ray image from an upper layer signal component and a lower layer signal component of an X-ray signal that is detected by an X-ray detector and is generated in response to illuminating a wafer with an e-beam. the wafer includes an upper layer composed of a first material and a lower layer composed of a different material. The upper layer includes a plurality of first patterns and the lower layer includes a plurality of second patterns, wherein at least a few of the second patterns are partially or fully occluded by a few of the first patterns. The upper layer signal component and the lower-layer signal component represents the patterns in the upper and lower layers respectively, and wherein the upper layer and lower layer signal components are segregable by unique wavelengths that depend on their respective first and second materials.
G03F 7/00 - Production par voie photomécanique, p. ex. photolithographique, de surfaces texturées, p. ex. surfaces impriméesMatériaux à cet effet, p. ex. comportant des photoréservesAppareillages spécialement adaptés à cet effet
G01N 23/2251 - Recherche ou analyse des matériaux par l'utilisation de rayonnement [ondes ou particules], p. ex. rayons X ou neutrons, non couvertes par les groupes , ou en mesurant l'émission secondaire de matériaux en utilisant des microsondes électroniques ou ioniques en utilisant des faisceaux d’électrons incidents, p. ex. la microscopie électronique à balayage [SEM]
G01B 15/00 - Dispositions pour la mesure caractérisées par l'utilisation d'ondes électromagnétiques ou de radiations de particules, p. ex. par l'utilisation de micro-ondes, de rayons X, de rayons gamma ou d'électrons
H01L 21/66 - Test ou mesure durant la fabrication ou le traitement
Embodiments of the disclosure generally relate to methods for filling substrate features. Particularly, embodiments of the disclosure are directed to methods improving lateral gap fill. In one embodiment, a method includes positioning a substrate having a feature formed therein within a processing chamber, the feature comprising a vertical trench and one or more lateral trenches extending from the vertical trench; exposing the substrate to at least one pretreatment precursor to pretreat the substrate, wherein pretreating the substrate increases a hydrophobicity of one or more surfaces of the feature in the substrate; and depositing a gapfill material on the substrate and the feature formed therein to gapfill the vertical trench and the one or more lateral trenches of the feature.
Disclosed herein are approaches for forming a void-free trench fill material in a high aspect ratio trench using an angled ion implant. In some embodiments, a method may include providing a trench in a substrate, the trench including a set of sidewalls connected by a bottom surface, and forming a suppressor layer along an upper portion of the set of sidewalls of the trench by directing ions of an ion beam into the set of sidewalls at a non-zero angle relative to a perpendicular extending from an upper surface of the substrate. The ions impact the upper portion of the set of sidewalls without impacting a lower portion of the set of sidewalls.
H01L 21/265 - Bombardement par des radiations ondulatoires ou corpusculaires par des radiations d'énergie élevée produisant une implantation d'ions
H01J 37/317 - Tubes à faisceau électronique ou ionique destinés aux traitements localisés d'objets pour modifier les propriétés des objets ou pour leur appliquer des revêtements en couche mince, p. ex. implantation d'ions
H01L 21/02 - Fabrication ou traitement des dispositifs à semi-conducteurs ou de leurs parties constitutives
81.
SELECTIVE ETCHING OF SILICON-CONTAINING MATERIAL RELATIVE TO METAL-DOPED BORON FILMS
Exemplary semiconductor structures may include a substrate. The structures may include a silicon-and-oxygen material may overlying the substrate. The structures may include a silicon-carbon-and-nitrogen material overlying the silicon-and-oxygen material. The structures may include a metal-doped boron-containing material overlying the silicon-carbon-and-nitrogen material. The metal-doped boron-containing material may be or include a metal dopant comprising tungsten. The structures may include one or more additional materials overlying the metal-doped boron-containing material. The one or more additional materials may be or include a patterned photoresist material.
Exemplary semiconductor processing methods may include providing an oxygen-containing precursor to a processing region of a semiconductor processing chamber. A metal-containing material may be disposed on a substrate housed within the processing region. The oxygen-containing precursor may be provided from a gas box of the semiconductor processing chamber, through a showerhead defining an upper surface of the processing region, and into the processing region without passing an intervening gas flow component. The methods may include contacting the substrate with the oxygen-containing precursor to oxidize a portion of the metal-containing material to form a metal-and-oxygen-containing material. The methods may include providing a halogen-containing precursor to the processing region of the semiconductor processing chamber. The methods may include contacting the substrate with the halogen-containing precursor to etch the metal-and-oxygen-containing material.
Embodiments of the disclosure generally relate to methods for filling substrate features. Particularly, embodiments of the disclosure are directed to methods improving lateral gap fill. In one embodiment, a method includes positioning a substrate having a feature formed therein within a processing chamber, the feature comprising a vertical trench and one or more lateral trenches extending from the vertical trench; exposing the substrate to at least one pretreatment precursor to pretreat the substrate, wherein pretreating the substrate increases a hydrophobicity of one or more surfaces of the feature in the substrate; and depositing a gapfill material on the substrate and the feature formed therein to gapfill the vertical trench and the one or more lateral trenches of the feature.
Disclosed herein is a gas panel assembly operable with a substrate processing chamber, the gas panel assembly including an enclosure defining a first compartment and a second compartment separated by a divider wall. A first gas pallet assembly within the first compartment is operable to provide a first gas to the substrate processing chamber, and a second gas pallet assembly within the second compartment is operable to provide a second gas to the substrate processing chamber. The gas panel assembly may further include a first flow control device between the first compartment and an exhaust, the first flow control device operable to control air flow between the first compartment and the exhaust, and a duct connecting the second compartment and the exhaust, wherein a second flow control device is operable to control air flow between the second compartment and the duct.
A method of reducing defects in a beamline ion implanter. The method may entail, after performing an implantation procedure on a set of substrates disposed in a process chamber of a beamline of the ion implanter, using a first ion beam comprising a first ion species, the additional procedure of: performing a beam conditioning operation of at least a portion of the beamline. The beam conditioning operation may include generating a second ion beam and conducting the second ion beam to the process chamber along a direction of propagation, and moving the second ion beam within the process chamber, in a sweep direction, at an angle with respect to the direction of propagation, wherein a targeted region of the process chamber is impacted by the second ion beam.
H01J 37/317 - Tubes à faisceau électronique ou ionique destinés aux traitements localisés d'objets pour modifier les propriétés des objets ou pour leur appliquer des revêtements en couche mince, p. ex. implantation d'ions
Exemplary methods of semiconductor processing may include providing a silicon-free treatment precursor to a processing region of a semiconductor processing chamber. A substrate may be housed within the processing region. An exposed region of a silicon-containing material and an exposed region of a metal-containing material may be disposed on the substrate. The methods may include contacting the substrate with the silicon-free treatment precursor. The contacting may reduce a dielectric constant of the silicon-containing material. Subsequent to contacting the substrate with the silicon-free treatment precursor, a surface of the metal-containing material may be silicon-free.
A substrate support assembly is provided, including: a substrate support that includes a lower portion and an upper portion; an electrode disposed in the upper portion; a heater disposed in the upper portion; and a plurality of spacers positioned between the lower portion and the upper portion to form a gap between the upper portion and the lower portion. The gap is open to allow gas to flow from outside the substrate support and through the gap.
A process chamber is provided including: a chamber body disposed around an interior volume; a substrate support in the interior volume, the substrate support having a substrate supporting surface; a gas delivery assembly positioned over the substrate support. A central vertical axis extends through the gas delivery assembly and through a center of the substrate support, and the substrate support includes an inner portion and an outer portion, the outer portion located further from the central vertical axis than the inner portion is to the central vertical axis. The process chamber further includes an electrode in the substrate support, the electrode located in the outer portion of the substrate support without extending into the inner portion of the substrate support.
A method for controlling fluorine diffusion during plasma enhanced chemical vapor deposition (PECVD) of silicon nitride is disclosed. The process involves forming a chamber seasoning layer including silicon oxide and/or silicon nitride over aluminum-containing surfaces in the processing chamber after fluorine-based cleaning. The seasoning layer is then treated with hydrogen plasma, passivating silicon dangling bonds and blocking fluorine diffusion pathways. By reducing fluorine contamination in the films that are deposited afterward, this method enhances film quality, boosts device electrical performance, and increases manufacturing yield.
C23C 16/44 - Revêtement chimique par décomposition de composés gazeux, ne laissant pas de produits de réaction du matériau de la surface dans le revêtement, c.-à-d. procédés de dépôt chimique en phase vapeur [CVD] caractérisé par le procédé de revêtement
C23C 16/50 - Revêtement chimique par décomposition de composés gazeux, ne laissant pas de produits de réaction du matériau de la surface dans le revêtement, c.-à-d. procédés de dépôt chimique en phase vapeur [CVD] caractérisé par le procédé de revêtement au moyen de décharges électriques
Embodiments include a plasma processing apparatus including a chamber with an inner chamber wall. A workpiece support is within the inner chamber wall, the workpiece support for supporting a workpiece in a processing region of the chamber. A resonator probe is coupled to the inner chamber wall. The resonator probe includes an exposed resonator and a buried resonator.
Embodiments of the present disclosure are directed to methods of selectively etching silicon. The methods include flowing a precursor comprising one or more of an interhalogen, a halogen-containing species, a pseudohalogen species, a mixture of one or more of the interhalogen, the halogen-containing species, or the pseudohalogen species and one or more of an amine, a phosphine, a glycol, or an acid, or a mixture of one or more of the interhalogen, the halogen-containing species, the pseudohalogen species and a sulfur-containing species, into a semiconductor processing chamber containing a substrate; forming an activated species of the precursor; and exposing the substrate to the activated species to etch the substrate. The methods selectively etch silicon relative to silicon germanium, silicon oxide, and/or silicon nitride.
Methods of depositing thermally conductive polymeric films are described. Each of the methods include flowing a first precursor over a substrate; removing a first precursor effluent comprising the first precursor; flowing a second precursor over the substrate to react with the first precursor to form the polymeric film on the substrate; and removing a second precursor effluent comprising the second precursor. The methods may include performing a metal deposition process. The methods may include performing a post-treatment process, such as a heat treatment process.
C23C 16/455 - Revêtement chimique par décomposition de composés gazeux, ne laissant pas de produits de réaction du matériau de la surface dans le revêtement, c.-à-d. procédés de dépôt chimique en phase vapeur [CVD] caractérisé par le procédé de revêtement caractérisé par le procédé utilisé pour introduire des gaz dans la chambre de réaction ou pour modifier les écoulements de gaz dans la chambre de réaction
C23C 16/06 - Revêtement chimique par décomposition de composés gazeux, ne laissant pas de produits de réaction du matériau de la surface dans le revêtement, c.-à-d. procédés de dépôt chimique en phase vapeur [CVD] caractérisé par le dépôt d'un matériau métallique
The present disclosure provides a substrate processing chamber configured to produce an inductively coupled plasma. In one example, the substrate processing chamber includes a chamber body, a substrate support assembly disposed within the chamber body, a lid assembly enclosing a processing region within the chamber body, the lid assembly comprising an inductive coil configured to generate a plasma within the processing region of the chamber body, at least one magnet coupled to a magnet power source, and at least one electrode circumferentially extending along a perimeter of the chamber body. The at least one electrode is positioned below a metal lid support ring and above the at least one magnet.
Embodiments disclosed herein include electrode configurations for a plasma-enhanced deposition process. In an example, an electrode configuration includes a stack of wafer processing regions aligned along a vertical axis. A plurality of electrodes is surrounding the stack of wafer processing regions. Each one of the plurality of electrodes is extending along the vertical axis.
C23C 16/509 - Revêtement chimique par décomposition de composés gazeux, ne laissant pas de produits de réaction du matériau de la surface dans le revêtement, c.-à-d. procédés de dépôt chimique en phase vapeur [CVD] caractérisé par le procédé de revêtement au moyen de décharges électriques utilisant des décharges à radiofréquence utilisant des électrodes internes
C23C 16/455 - Revêtement chimique par décomposition de composés gazeux, ne laissant pas de produits de réaction du matériau de la surface dans le revêtement, c.-à-d. procédés de dépôt chimique en phase vapeur [CVD] caractérisé par le procédé de revêtement caractérisé par le procédé utilisé pour introduire des gaz dans la chambre de réaction ou pour modifier les écoulements de gaz dans la chambre de réaction
The present technology includes vertical cell dynamic random-access memory (DRAM) structures with improve bit line capacitance. Structures include a plurality of lower bit lines arranged in a first horizontal direction in a first horizontal plane. Structures include a plurality of upper bit lines arranged in the first horizontal direction in a second horizontal plane, where the first horizontal plane is vertically spaced apart from the second horizontal plane. Structures include one or more word lines arranged in a second horizontal direction. Structures include one or more channels extending in a vertical direction that is generally orthogonal to the first horizontal direction and the second horizontal direction such that the plurality of lower bit lines and plurality of upper bit lines intersect with a source/drain region of the one or more channels, and the one or more word lines intersect with a gated region of the one or more channels.
A carrier head assembly for a chemical mechanical polishing system is provided. The carrier head assembly includes a base assembly and a rectangular membrane. The rectangular membrane extends below and is coupled to the base assembly. The rectangular membrane defines pressurizable chambers including a first pressurizable chamber and a second pressurizable chamber arranged, at least in part, in a chamber stack in which the first pressurizable chamber is stacked on the second pressurizable chamber. The first and second pressurizable chambers are pressurizable to different pressures to create a pressure differential that provides a downward force through a side wall forming, at least in part, the second pressurizable chamber.
Interconnect structures in a microelectronic device and methods of forming the same are described. The method comprises processing a substrate comprising a dielectric layer disposed thereon, the dielectric layer having one or more features including an opening, a sidewall, a top surface, a bottom. The method includes forming a cobalt liner layer having a thickness in a range of from 5 Ångstroms to 20 Ångstroms on the sidewall, the top surface, and the bottom using a physical vapor deposition process. The method includes doping an external portion of the cobalt liner layer with carbon, the external portion of the cobalt liner layer having a thickness in a range of from 1 Ångstrom to 5 Ångstroms to form a lined feature. Copper is deposited into the lined feature.
Methods and apparatus for processing a substrate are provided herein. For example, a method includes using an extended spectroscopic ellipsometer to direct a beam of electromagnetic radiation having a beam energy toward a portion of a substrate at an incident angle to produce an extended spectroscopic ellipsometry (ESE) data set from the portion of the substrate which includes a measured change of a phase and/or an amplitude of the beam of electromagnetic radiation reflecting away from the portion of the substrate relative to the beam of electromagnetic radiation directed toward the portion of the substrate. One or more properties of the portion of the substrate are then determined based at least in part on the ESE data set of the portion of the substrate.
