A semiconductor device is protected from glitch attacks (FIA). A reset data transfer controller RDTC executes N times of data transfer, transferring data DT stored in a first memory MEM1a to a main register REGm during the first data transfer, and transferring data DT stored in the first memory MEM1a to a sub-register REGs during the Nth data transfer. A comparison circuit CMP1 determines the match/mismatch between the data DTm transferred to the main register REGm and the data DTs transferred to the sub-register REGs, and outputs a determination result signal RS representing the determination result. A system controller SYSC activates a processor PRC when the determination result signal RS indicates a match, and causes the reset data transfer controller RDTC to execute the N times of data transfer again when it indicates a mismatch.
High speed of an analog-digital converter of a semiconductor device is achieved. A voltage quantizer circuit includes: a first comparator including a first input transistor inputting differential input voltages, and defining a value of a first bit of a digital signal; and a second comparator including a second input transistor being different from the first input transistor, and defining a value of a second bit of the digital signal. A correction code decision circuit decides a correction code for correcting a common-mode voltage of the differential input voltages, based on a conversion end signal output from the voltage quantizer circuit. A common-mode voltage regulator circuit regulates the common-mode voltage by adding or subtracting a corrected voltage based on the correction code to or from the differential input voltages.
A semiconductor device includes a semiconductor substrate, a multilayer wiring structure formed on the semiconductor substrate, a guard ring formed so as to surround a circuit formation region and penetrate the multilayer wiring structure, and a pad formed on the multilayer wiring structure. A protective film is formed so as to cover the multilayer wiring structure, the guard ring, and the pad. A trench is formed so as to penetrate the protective film and reach an inside of the multilayer wiring structure. The trench is formed so as to surround the guard ring. The guard ring includes a wiring formed on the multilayer wiring structure. The trench is spaced apart from and adjacent to the wiring. A bottom surface of the trench is inclined so as to be continuously deepened in a direction from the circuit formation region toward a peripheral region surrounding the circuit formation region.
H01L 23/58 - Dispositions électriques structurelles non prévues ailleurs pour dispositifs semi-conducteurs
H01L 21/78 - Fabrication ou traitement de dispositifs consistant en une pluralité de composants à l'état solide ou de circuits intégrés formés dans ou sur un substrat commun avec une division ultérieure du substrat en plusieurs dispositifs individuels
H01L 23/00 - Détails de dispositifs à semi-conducteurs ou d'autres dispositifs à l'état solide
H01L 23/31 - Encapsulations, p. ex. couches d’encapsulation, revêtements caractérisées par leur disposition
4.
ON-CHIP NOISE MEASUREMENT IN A TRANSCEIVER, METHOD AND SYSTEM THEREOF
According to an aspect, a transceiver comprises a transmitter section having a first PLL (phased locked loop) providing a first reference signal to the transmitter section, a receiver section having a second PLL providing a second reference signal to the receiver section, a coupler coupling the second PLL to the transmitter section when the transceiver is operative in a test mode measuring a first noise component introduced by the first PLL. The first reference signal is coupled to the receiver section internally within the transceiver as a local reference signal to the receiver section both in the test mode and a functional mode.
A failure analysis device is for analyzing a failure of the semiconductor device equipped with a logic circuit and a memory circuit. It has a storage device and a processor. The storage device stores fail bit data obtained by testing the memory circuit and failure diagnosis data obtained by failure diagnosis for test results of the logic circuit. The processor extracts the fail I/O value from the fail bit data, extracts the data of the memory connection port which is the connection port to the memory circuit from among the estimated failure parts included in the failure diagnosis data, and determines match/not-match between the fail I/O value and the port ID value included in the data of the memory connection port.
Systems and methods for sensing and processing biosignals are described. An example system can include a first device configured to sense at least one biosignal and a second device. The second device can receive the at least one biosignal from the first device. The second device can receive power via a first wireless interface. The second device can charge a rechargeable battery using the received power. The second device can receive a signal via the first wireless interface, wherein the signal encodes credentials of a user. The second device can demodulate the signal to decode the user credentials. The second device can authenticate the user credentials. The second device can, in response to authentication of the user credentials, communicate the at least one biosignal to a user device via a second wireless interface.
H02J 50/20 - Circuits ou systèmes pour l'alimentation ou la distribution sans fil d'énergie électrique utilisant des micro-ondes ou des ondes radio fréquence
H04W 4/80 - Services utilisant la communication de courte portée, p. ex. la communication en champ proche, l'identification par radiofréquence ou la communication à faible consommation d’énergie
A failure detection circuit is provided in the target circuit having a first circuit area for operating in synchronization with the first clock signal, a first detection circuit for outputting a first detection result obtained by transitioning the voltage level in synchronization with the first clock signal, the first clock signal a second detection circuit for outputting a second detection result obtained by transitioning the voltage level in synchronization with, and a first comparison circuit for outputting a first comparison result by comparing the first detection result and the second detection result. Accordingly, by the failure detection circuit, it is possible to detect the failure accurately.
H03K 19/20 - Circuits logiques, c.-à-d. ayant au moins deux entrées agissant sur une sortieCircuits d'inversion caractérisés par la fonction logique, p. ex. circuits ET, OU, NI, NON
According to one embodiment, the semiconductor device 1 includes a semiconductor substrate having an upper surface and a lower surface, and an emitter wiring, wherein when viewed from the upper surface side, the semiconductor substrate has an active region including a plurality of IGBTs, a termination region, and a main junction region, wherein the semiconductor substrate of the main junction region has an N− type drift layer and a P type junction impurity layer, wherein the semiconductor substrate of the termination region has an N− type drift layer and a P type floating layer, wherein at least the main junction region has a trench electrode provided inside the trench, and a trench insulating film provided between the trench electrode and the semiconductor substrate, and wherein the trench electrode and the P type junction impurity layer are connected to the emitter wiring.
H01L 29/739 - Dispositifs du type transistor, c.à d. susceptibles de répondre en continu aux signaux de commande appliqués commandés par effet de champ
H01L 29/06 - Corps semi-conducteurs caractérisés par les formes, les dimensions relatives, ou les dispositions des régions semi-conductrices
H01L 29/423 - Electrodes caractérisées par leur forme, leurs dimensions relatives ou leur disposition relative ne transportant pas le courant à redresser, à amplifier ou à commuter
9.
SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING THE SAME
A first surface of a die pad has: a first region; a second region that includes points respectively overlapping with four corners of a semiconductor chip; and a third region that is located around the second region. Also, a plurality of grooves is formed in the die pad at the second region. Also, each of the plurality of grooves terminates at a position not reaching each of the first region and the third region. Also, the plurality of grooves includes: a plurality of first grooves each extending in an extending direction of one of two diagonal lines of the semiconductor chip; and a plurality of second grooves each extending in an extending direction of another one of the two diagonal lines. Also, in each of the plurality of first grooves is arranged so as to intersect with one or more of the plurality of second grooves.
A gate insulating film and a gate electrode of non-single crystalline silicon for forming an nMOS transistor are provided on a silicon substrate. Using the gate electrode as a mask, n-type dopants having a relatively large mass number (70 or more) such as As ions or Sb ions are implanted, to form a source/drain region of the nMOS transistor, whereby the gate electrode is amorphized. Subsequently, a silicon oxide film is provided to cover the gate electrode, at a temperature which is less than the one at which recrystallization of the gate electrode occurs. Thereafter, thermal processing is performed at a temperature of about 1000° C., whereby high compressive residual stress is exerted on the gate electrode, and high tensile stress is applied to a channel region under the gate electrode. As a result, carrier mobility of the nMOS transistor is enhanced.
A carrier tape includes a first layer component having a recess and a first opening in a center of the recess, and a second layer component housed in the recess, the second layer having a center arranged parallel to the recess, a step part arranged around the center by a step falling from the center, a second opening overlapping the first opening arranged in the center, and a third opening arranged in the step part.
H01L 21/683 - Appareils spécialement adaptés pour la manipulation des dispositifs à semi-conducteurs ou des dispositifs électriques à l'état solide pendant leur fabrication ou leur traitementAppareils spécialement adaptés pour la manipulation des plaquettes pendant la fabrication ou le traitement des dispositifs à semi-conducteurs ou des dispositifs électriques à l'état solide ou de leurs composants pour le maintien ou la préhension
A semiconductor device according to the embodiment includes a semiconductor chip having a first MOSFET formed in a first region of a semiconductor substrate, a detection element formed in a second region within the first region, a source electrode formed above the first region and connected to a source of the first MOSFET, and a source electrode material arranged to cover the detection element and stitch-bonded to the source electrode.
To reduce the time required for data writing. A semiconductor memory device is provided, comprising a memory cell having a gate electrode including a selection gate and a memory gate, a source line connected to a source, and a bit line connected to a drain, an extraction part that extracts a current flowing from the source side to the drain side during writing in the memory cell from the bit line, a discharge part that has a higher ability to pass current than the extraction part and lowers the voltage of the bit line, a charge part that has a higher ability to pass current than the discharge part and applies a voltage to the bit line, and a control part that, when starting to write to the memory cell, lowers the voltage of the bit line by the discharge part and applies a voltage to the bit line by the charge part.
Improve the reliability of a semiconductor device. A resistive element Rg is filled in a trench TR formed in a well region PW of a semiconductor substrate. The resistive element Rg and the trench TR have an endless shape in plan view. The resistive element Rg is connected to a first contact member PG that is electrically connected to a gate pad GP, and a second contact member PG that is electrically connected to a gate wiring GW. Furthermore, a third contact member PG, which electrically connects an emitter electrode EE to the well region PW, is positioned in an area surrounded by an endless shape of the resistive element Rg, between the first and second contact members PG in a Y direction.
H01L 27/06 - Dispositifs consistant en une pluralité de composants semi-conducteurs ou d'autres composants à l'état solide formés dans ou sur un substrat commun comprenant des éléments de circuit passif intégrés avec au moins une barrière de potentiel ou une barrière de surface le substrat étant un corps semi-conducteur comprenant une pluralité de composants individuels dans une configuration non répétitive
H01L 29/06 - Corps semi-conducteurs caractérisés par les formes, les dimensions relatives, ou les dispositions des régions semi-conductrices
H01L 29/423 - Electrodes caractérisées par leur forme, leurs dimensions relatives ou leur disposition relative ne transportant pas le courant à redresser, à amplifier ou à commuter
H01L 29/739 - Dispositifs du type transistor, c.à d. susceptibles de répondre en continu aux signaux de commande appliqués commandés par effet de champ
Providing a memory device that initializes memory cell data in a batch by specifying initialization data, or a memory device that initializes memory cell data in a batch by partially masking the initialization area. A memory device is provided that includes a control circuit that receives an initialization mode signal transmitted from an initialization control circuit and generates an internal clock and a write control signal, an IO (Input/Output) input circuit that applies a Low level to the True side or Bar side of a bit line according to initialization data transmitted from the initialization control circuit, and a selection circuit that simultaneously selects multiple word lines and multiple bit lines, and writes the initialization data simultaneously into a memory cell connected to the selected word lines and bit lines.
In plan view, an electrode pad of a semiconductor chip includes: a first region that contains a center of an exposed portion of the electrode pad; a second region that is located around the first region; and a third region that is located around the first region and that is located between the first region and the second region. Here, a first groove that separates a plurality of semiconductor elements formed in a semiconductor substrate from each other is formed in the semiconductor substrate. The semiconductor substrate includes: a fourth region that overlaps with the third region but not overlaps with each of the first region and the second region, and a fifth region that overlaps with the first region but not overlaps with the third region. And, the first groove is formed in the semiconductor substrate at the fifth region but not at the fourth region.
H01L 23/00 - Détails de dispositifs à semi-conducteurs ou d'autres dispositifs à l'état solide
H01L 21/48 - Fabrication ou traitement de parties, p. ex. de conteneurs, avant l'assemblage des dispositifs, en utilisant des procédés non couverts par l'un uniquement des groupes ou
H01L 21/56 - Encapsulations, p. ex. couches d’encapsulation, revêtements
H01L 23/13 - Supports, p. ex. substrats isolants non amovibles caractérisés par leur forme
H01L 23/498 - Connexions électriques sur des substrats isolants
17.
SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING THE SAME
The technology of improving the adhesion of the barrier metal film is provided. The semiconductor device includes: a floating region formed between a trench gate electrode and a trench emitter electrode; a stacked film formed on the floating region; an interlayer insulating film formed on the stacked film; a plug penetrating the interlayer insulating film and reaching the stacked film; a barrier metal film formed to cover the interlayer insulating film and the plug; and a metal film formed on the barrier metal film.
H01L 29/739 - Dispositifs du type transistor, c.à d. susceptibles de répondre en continu aux signaux de commande appliqués commandés par effet de champ
H01L 29/06 - Corps semi-conducteurs caractérisés par les formes, les dimensions relatives, ou les dispositions des régions semi-conductrices
H01L 29/49 - Electrodes du type métal-isolant-semi-conducteur
H01L 29/66 - Types de dispositifs semi-conducteurs
A controller for controlling a power stage having one or more phases is presented. The controller includes a reference circuit that generates a reference signal; a ramp generator generating a feedback ramp signal based on a feedback signal of the power stage; and a modulator generating a control signal for controlling at least one phase of the power stage. The control signal may include a series of pulses in which each pulse is associated with a corresponding phase of the power stage.
H02M 1/08 - Circuits spécialement adaptés à la production d'une tension de commande pour les dispositifs à semi-conducteurs incorporés dans des convertisseurs statiques
H02M 1/00 - Détails d'appareils pour transformation
A power converter controller is presented. The controller includes a ramp generator for generating a ramp signal and a ramp adjuster. The ramp adjuster compares a feedback signal of the converter with a threshold signal to obtain a comparison signal, and to adjust an amplitude of the ramp signal based on the comparison signal. Also presented is a constant on time COT power converter including the above controller.
H02M 3/157 - Transformation d'une puissance d'entrée en courant continu en une puissance de sortie en courant continu sans transformation intermédiaire en courant alternatif par convertisseurs statiques utilisant des tubes à décharge avec électrode de commande ou des dispositifs à semi-conducteurs avec électrode de commande utilisant des dispositifs du type triode ou transistor exigeant l'application continue d'un signal de commande utilisant uniquement des dispositifs à semi-conducteurs avec commande automatique de la tension ou du courant de sortie, p. ex. régulateurs à commutation avec commande numérique
H02M 3/158 - Transformation d'une puissance d'entrée en courant continu en une puissance de sortie en courant continu sans transformation intermédiaire en courant alternatif par convertisseurs statiques utilisant des tubes à décharge avec électrode de commande ou des dispositifs à semi-conducteurs avec électrode de commande utilisant des dispositifs du type triode ou transistor exigeant l'application continue d'un signal de commande utilisant uniquement des dispositifs à semi-conducteurs avec commande automatique de la tension ou du courant de sortie, p. ex. régulateurs à commutation comprenant plusieurs dispositifs à semi-conducteurs comme dispositifs de commande finale pour une charge unique
20.
SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING THE SAME
A semiconductor device includes a first well region, a second well region, a body region, and a cathode region. The impurity concentration of the body region is higher than the impurity concentration of the first well region, and the impurity concentration of the second well region is higher than the impurity concentration of the body region. In plan view, the body region includes the cathode region, and the cathode region includes the second well region. The cathode region configures a cathode of a Zener diode, and the first well region, the second well region, and the body region configure an anode of the Zener diode.
H01L 27/02 - Dispositifs consistant en une pluralité de composants semi-conducteurs ou d'autres composants à l'état solide formés dans ou sur un substrat commun comprenant des éléments de circuit passif intégrés avec au moins une barrière de potentiel ou une barrière de surface
H01L 29/66 - Types de dispositifs semi-conducteurs
21.
SEMICONDUCTOR DEVICE AND SEMICONDUCTOR DIAGNOSTIC DEVICE
The technology provided enables the acceleration of the clock. The semiconductor device comprises a counter circuit configured to generate a read signal when the count number reaches a predetermined number, a buffer configured to store test data and sequentially output the test data in the order stored when the read signal indicates a valid value, and a first scan test circuit that sequentially captures the test data output from the buffer.
A semiconductor device is provided. The semiconductor device is capable of operating accurately by suppressing errors caused by dielectric relaxation phenomena. The semiconductor device includes a first capacitive element, a first switch circuit, a first inversion signal generating circuit, a second capacitive element, and a negative feedback circuit.
H03M 1/46 - Valeur analogique comparée à des valeurs de référence uniquement séquentiellement, p. ex. du type à approximations successives avec convertisseur numérique/analogique pour fournir des valeurs de référence au convertisseur
A semiconductor device has a semiconductor substrate, a first insulating layer, a first inductor, a second insulating layer, a second inductor, a pad and an annular wiring. The first insulating layer is formed on the semiconductor substrate. The first inductor is directly formed on the first insulating layer. The second insulating layer is formed on the first insulating layer such that the second insulating layer covers the first inductor. The second inductor is directly formed on the second insulating layer such that the second inductor faces the first inductor. The pad is directly formed on the second insulating layer. The pad is electrically connected with the second inductor. The annular wiring is electrically connected with the pad. The annular wiring is spaced apart from the second inductor. The annular wiring surrounds the second inductor without forming a vertex in plan view.
09 - Appareils et instruments scientifiques et électriques
42 - Services scientifiques, technologiques et industriels, recherche et conception
Produits et services
Integrated circuits; electronic integrated circuits; large
scale integrated circuits; semi-conductors; semiconductor
chips; semiconductor chipsets; microprocessors;
semi-conductor memories; electronic semi-conductors; circuit
boards; chips [integrated circuits]; computer software;
computer programs; computer hardware and software for use in
implementing internet of things [IoT]; computer hardware;
computer software platforms, recorded or downloadable;
computers and computer peripherals; DC/DC converters; AC/DC
converters; converters, electric; electrical power supplies;
components for electrical power supplies; accessories for
electrical power supplies; electronic power control machines
and apparatus; power control device; electronic power
supplies; electric current control devices; power
distribution or control machines and apparatus; rotary
converters; phase modifiers; solar batteries; accumulators
[batteries]; electrical cells and batteries; current sensors
and testers for measuring semiconductor characteristics;
electric or magnetic meters and testers; electric wires and
cables; telecommunication machines and apparatus; personal
digital assistants; vehicle drive training simulators;
sports training simulators; laboratory apparatus and
instruments; photographic machines and apparatus;
cinematographic machines and apparatus; optical machines and
apparatus; measuring or testing machines and instruments;
magnetic cores; resistance wires; electrodes; game programs
for home video game machines; electronic circuits and
CD-ROMs recorded with programs for hand-held games with
liquid crystal displays; phonograph records; downloadable
music files; downloadable image files; recorded video discs
and video tapes; electronic publications; exposed
cinematographic films; exposed slide films; slide film
mounts; apparatus for recording, transmission or
reproduction of sound or images; magnetic data carriers and
recording discs; data processing apparatus and computers;
electronic agendas; amplifiers; antennas; bar code readers;
electric cables; fiber optic cables; encoded magnetic cards;
cassette players; commutators; compact discs [audio-video];
computer game programs; computer memories; recorded or
downloadable computer programs; computers; printers for use
with computers; electric contacts; control panels for power
distributing; magnetic data media; optical data media;
optical discs; blank magnetic discs; disk drives for
computers; downloadable electronic publications; integrated
circuit cards; inverters [electricity]; lasers, not for
medical purposes; magnetic tapes; meters; modems; electric
monitoring apparatus; monitors for computer; mouse for
computers; digital color photocopiers; portable telephones;
radio pagers; optical character readers; remote control
apparatus; electric resistances; scanners for computer;
electric sockets; sound recording apparatus; sound recording
magnetic discs and video tapes; sound reproducing apparatus;
sound transmitting apparatus; personal stereos; electric
switches; switches; telephone apparatus; thermostats;
telecommunication transmitters; video cassettes; video game
cartridges; video recorders; video telephones; air-gas
producers for laboratory use; thermostats for laboratory
use; hygrostats for laboratory use; glassware for laboratory
experiments; porcelain instruments for laboratory
experiments; furnaces for laboratory experiments; laboratory
experimental machines and apparatus; models/specimens for
laboratory use; tilting pan heads [for laboratory use];
cameras; range finders; photo-developing/printing/enlarging
or finishing apparatus; tripods [for cameras]; bellows
[photography]; spools; slide projectors; self-timers; power
supply equipment for photography flash bulbs; flash lamps;
viewfinders; lens hoods; flash guns; shutter releases;
optical lenses; exposure meters; projectors [projection
apparatus]; transparent sheets [exposed films] for overhead
projectors; photograph developing or finishing apparatus;
cinematographic cameras; projection screens; editing
machines for movie films; lens barrels [for telescopes];
tripods [for telescopes]; periscopes; binoculars; reflectors
[for telescopes]; prisms [telescopes]; telescopes;
magnifying glasses; metallurgical microscopes; biological
microscopes; polarizing microscopes; stereoscopes;
microscopes; temperature indicators; gasometers;
thermometers; water meters; balances/scales; tape measures;
masu [Japanese box-shaped volume measure]; planimeters;
rules; standard-unit measuring machines and apparatus;
pressure gauges/manometers; level gauges; acoustic meters;
tachometers; accelerometers; refractometers; luminoflux
meters; photometers; altimeters; hygrometers;
illuminometers; vibration gauges; noise meters; logs;
speedometers [speed indicators]; calorimeters;
viscosimeters; densitometers/concentration meters;
gravimeters/aerometers; densimeters [density meters];
dynamometers; flowmeters; derived-unit measuring machines
and apparatus; angle gauges; angle dividing apparatus
[measuring instruments]; spherometers; inclinometers;
interferometers; straightness testers; projectors;
graduation checkers [calibration checkers]; length gauges;
screw-thread measuring machines and instruments;
comparators; surface roughness testers; flatness testers;
precision measuring machines and instruments; automatic
pressure controllers; automatic liquid-flow controllers;
automatic fluid-composition controllers; automatic
liquid-level controllers; automatic temperature controllers;
automatic combustion controllers; automatic vacuum
controllers; automatic calorie controllers; programmable
logic controllers; automatic adjusting/regulating machines
and instruments; metal compression testers; metal hardness
testers; metal strength testers; rubber testing machines;
concrete testing machines; cement testing machines; textile
testing machines; plastic testing machines; lumber testing
machines; material testing machines and instruments;
alidades; meteorological instruments; base plates for
measuring instruments; distance measuring machines or
apparatus [range finders]; clinometers; magnetic compasses;
compass needles; gyro compasses; gyromagnetic compasses;
analysis instruments for photogrammetric purposes; levels
[spirit levels]; precision theodolites; measuring rods;
surveying chains; electronic target location apparatus;
transits for surveying; levelling rods for surveying;
sextants; surveying machines and instruments; meridian
transits; astronomical spectroscopes; zenith telescopes;
astrometric measuring apparatus and instruments; electronic
charts for identifying hiding-power of paint; rust-formation
testing pieces; relays; circuit breakers; power controllers;
current rectifiers; connectors; circuit closers; capacitors;
resistors; distributing boxes; distribution boards
[electricity]; fuses; lightning arresters; transformers;
induction voltage regulators; reactors [electricity]; phase
meters; oscillographs; circuit testers; antenna measuring
apparatus; detectors; magnetic measuring apparatus;
frequency meters; vacuum tube characteristic measuring
apparatus; watt hour meters; ammeters; wattmeters;
oscillators; electrical power testers; interphones;
automatic telephone exchange apparatus; manual telephone
exchange apparatus; telephone sets; teletypewriters;
automatic telegraph apparatus; phototelegraphy apparatus;
manual telegraph apparatus; facsimile machines; audio
frequency transmission apparatus; cable-type
carrier-frequency apparatus; power-line-type
frequency-carrier apparatus; open-wire-type
frequency-carrier apparatus; carrier-frequency repeaters;
transmission machines and apparatus for telecommunication;
television receivers; television transmitters; radio
receivers [radios]; radio transmitters; broadcasting
machines and apparatus; portable radio communication
apparatus; aeronautical radio communication apparatus;
multichannel radio communication apparatus for fixed
stations; monochannel radio communication apparatus for
fixed stations; radio communication apparatus for vehicles;
marine radio communication apparatus; radio communication
machines and apparatus; navigation apparatus for vehicles;
beacon apparatus; direction finders; radar apparatus; loran
apparatus; radio machines and apparatus; remote control
telemetering apparatus; loudspeakers/megaphones; compact
disc players; juke boxes; tape recorders; electric
phonographs; record players; audio frequency devices and
apparatus; video disc players; video frequency devices and
apparatus; cabinets for loudspeakers; coils, electric;
magnetic tape erasers; magnetic tape cleaners; magnetic head
erasers; magnetic head cleaners; speakers; stands and racks
for telecommunication machine and apparatus; dials [for
photographic transparencies]; fuses for communication
apparatus; tapes for tape recorders; change-over switches;
distribution boards; pickups; video tapes; indicator lights
for telecommunication apparatus; electrical phonomotors;
headphones; protectors for telecommunication apparatus;
microphones; record cleaners [cleaning apparatus for
phonograph records]; blank record discs; cleaning apparatus
for phonograph records; parts and accessories for
telecommunication machines and apparatus; geiger counters;
cyclotrons; X-ray apparatus, not for medical use; betatrons,
not for medical use; magnetic surveying machines; magnetic
object detectors; shielding cases for magnetic discs;
seismic wave surveying machines; hydrophone machines and
apparatus; ultrasonic depth sounders; ultrasonic flaw
detectors; ultrasonic sensors; electrostatic copying
machines; remote control apparatus for opening and closing
doors; electronic microscopes; desk-top computers; word
processors; X-rays tubes, not for medical use; tubes for
photographic instruments; vacuum tubes; rectifier tubes;
cathode ray tubes; discharge tubes; electron tubes;
thermistors; diodes; transistors; electronic circuits and
CD-ROMs recorded with program for handheld liquid crystal
display game; pre-recorded video discs and tapes;
semi-conductor devices; semi-conductor integrated circuits
including CPU; electronic circuits; magnetic drums, magnetic
discs, magnetic tapes, CD-ROMs, electronic circuits and
other storage mediums recorded with a program for developing
and designing of semi-conductor devices, integrated circuits
including CPU, electronic circuits and other electronic
machines; microcontrollers; microcomputers; programs for
microcomputers; circuits for testing/evaluating of
microcomputers, microcontrollers, microprocessors and
semi-conductor integrated circuits; semi-conductor
integrated circuits; semi-conductor commutators;
downloadable electronic publications for semi-conductors;
silicon wafers for semi-conductors; DVD players; DVD
recorders and digital video cameras; digital still cameras;
video cameras; liquid crystal displays; plasma display
television sets; light emitting diodes [LED]; printed
circuit boards; notebook computers; handheld computers;
personal digital assistants [PDA]; data processing
apparatus; electrostatic copying machines; printers; cathode
ray tube displays; computer peripheral equipment; compact
discs [CD]; digital versatile disks [DVD]; encoded magnetic,
optical and integrated circuit cards; magnetic cards; video
projectors; semi-conductor testing apparatus; computer
software in the field of artificial intelligence. Design of electronic circuit, semiconductor devices,
integrated circuits and large scale integrated circuits;
design and testing of semiconductor for others; designing of
machines, apparatus, instruments [including their parts] or
systems composed of such machines, apparatus and
instruments; design of semiconductor devices; design of
semiconductor chips; design of integrated circuits; design
and updating of computer software; provision of
technological information in relation to semiconductor
including integrated circuits; design of computer-simulated
models; computer programming; technological advice relating
to computers, automobiles and industrial machines; testing
or research in relation to electronic circuit, semiconductor
devices, integrated circuits and large scale integrated
circuits; design, development, testing and inspection of
power management integrated circuits (PMICs); testing and
research services relating to machines, apparatus and
instruments; Software as a service [SaaS]; Platform as a
service [PaaS]; leasing of a database server to third
parties; rental of computers; providing computer programs on
data networks; rental of laboratory apparatus and
instruments; providing meteorological information;
architectural design; surveying; geological surveys;
testing, inspection and research services in the fields of
pharmaceuticals, cosmetics and foodstuffs; research on
building construction or city planning; testing and research
services in the field of preventing pollution; testing and
research services in the field of electricity; testing and
research services in the field of civil engineering;
testing, inspection and research services in the fields of
agriculture, livestock breeding and fisheries; rental of
measuring apparatus; rental of telescopes; rental of
technical drawing instruments; design and development of
computer hardware and software; authenticating works of art;
calibration [measuring]; computer software design; computer
system design; computer systems analysis; consultancy in the
field of computer hardware; consultation in environment
protection; conversion of data or documents from physical to
electronic media; creating and maintaining web sites for
others; data conversion of computer programs and data, not
physical conversion; design of interior decor; dress
designing; duplication of computer programs; engineering;
graphic arts designing; hosting computer sites [web sites];
industrial design; installation of computer software;
maintenance of computer software; material testing;
packaging design; physics [research]; technical project
studies; quality control; recovery of computer data; rental
of computer software; research and development for others;
updating of computer software; styling [industrial design];
technical research; textile testing; underwater exploration;
vehicle roadworthiness testing; consultancy and advice in
the field of design of semi-conductor devices; testing,
checking and research of semi-conductor devices; providing
information about design of semi-conductor
devices/consultancy and advice in the field of design of
semi-conductor devices, testing, checking and research in
the field of semi-conductor devices; guidance and advice in
the field of design of semi-conductor chips; testing,
checking and research in the field of semi-conductor
chips/consultancy and advice in the field of design of
semi-conductor chips, testing, checking and research in the
field of semi-conductor chips; consultancy and advice in the
field of design of integrated circuits; testing, checking
and research in the field of integrated circuits; providing
information about design of integrated circuits/consultancy
and advice in the field of design of integrated circuits,
testing, checking and research in the field of integrated
circuits; design of microcomputers; consultancy and advice
in the field of design of microcomputers; testing, checking
and research in the field of microcomputers; providing
information about design of microcomputers/consultancy and
advice in the field of design of microcomputers, testing,
checking and research in the field of microcomputer; design
of IC cards; consultancy and advice in the field of design
of IC cards; testing, checking and research in the field of
IC cards; providing information about design of IC
cards/consultancy and advice in the field of design of IC
cards, testing, checking and research in the field of IC
cards; design of semi-conductor memory; consultancy and
advice in the field of design of semi-conductor memory;
testing, checking and research in the field of
semi-conductor memory; providing information about design of
semi-conductor memory/consultancy and advice in the field of
design of semi-conductor memory, testing, checking and
research in the field of semi-conductor memory; design of
circuit boards; consultancy and advice in the field of
design of circuit boards; testing, checking and research in
the field of circuit boards; providing information about
design of circuit boards/consultancy and advice in the field
of design of circuit boards, testing, checking and research
in the field of circuit boards; design of semi-conductor
manufacturing apparatus; consultancy and advice in the field
of design of semi-conductor manufacturing apparatus;
testing, checking and research in the field of
semi-conductor manufacturing apparatus; providing
information about design of semi-conductor manufacturing
apparatus/consultancy and advice in the field of design of
semi-conductor manufacturing apparatus, testing, checking
and research in the field of semi-conductor manufacturing
apparatus; design of semi-conductor testing apparatus;
consultancy and advice in the field of design of
semi-conductor testing apparatus; testing, checking and
research in the field of semi-conductor testing apparatus;
providing information about design of semi-conductor testing
apparatus/consultancy and advice in the field of design of
semi-conductor testing apparatus, testing, checking and
research in the field of semi-conductor testing apparatus;
design of semi-conductor checking apparatus; consultancy and
advice in the field of design of semi-conductor checking
apparatus; testing, checking and research in the field of
semi-conductor checking apparatus; providing information
about design of semi-conductor checking
apparatus/consultancy and advice in the field of design of
semi-conductor checking apparatus, testing, checking and
research in the field of semi-conductor checking apparatus;
information relating to the use of electronic calculators;
information relating to the use of microcomputers; provision
of technological information relating to the use of
semi-conductor manufacturing apparatus; information relating
to the use of semi-conductor testing apparatus; information
relating to the use of semi-conductor checking apparatus;
computer programming and maintenance of computer software
and CAD; rental of computer software and CAD; research,
developing and designing of semi-conductor devices,
integrated circuits, CPUS and electronic circuits for
others; surveys, advice, consultation, and providing
information in the field of research, developing, and
designing for others of semi-conductors and devices,
integrated circuits, CPUS and electronic circuits; research,
developing, designing, programming and maintenance of
computer software for others; surveys, advice, consultation,
and providing information in the field of research,
developing, designing, programming and maintenance of
computer software; technical reports for others in the field
of research, developing, designing, programming and
maintenance of semi-conductor devices, integrated circuits,
CPUs and electronic circuits; technical writing for others
in the field of computer software; providing information in
the field of research, developing, and designing for others
of semi-conductor devices, integrated circuits, CPUs and
electronic circuits by means of a global computer network;
providing temporary use of on-line non-downloadable
applications software (for use in the field of
semi-conductor production, for use in electronic circuit
design); evaluation of technologies for manufacturing
semi-conductors for others; providing technology information
for research, developing and designing of semi-conductor
devices, integrated circuits, CPUs and electronic circuits;
mechanical testing and research; rental of semi-conductor
testing apparatus; providing information about rental of
semi-conductor testing apparatus; rental of semi-conductor
checking apparatus; providing information about rental of
semi-conductor checking apparatus; inspection of
semi-conductor manufacturing apparatus, semi-conductor
testing apparatus and semi-conductor checking apparatus;
providing information about inspection of semi-conductor
manufacturing apparatus, semi-conductor testing apparatus
and semi-conductor checking apparatus; providing temporary
use of on-line non-downloadable artificial intelligence
computer programs on data networks.
A semiconductor device is provided. The semiconductor device is capable of operating accurately by suppressing errors caused by dielectric relaxation phenomena. The semiconductor device includes a first capacitive element, a signal cancellation circuit, a sampling circuit, a negative feedback circuit, an AD converter, and an addition-and-subtraction circuit.
H03M 1/46 - Valeur analogique comparée à des valeurs de référence uniquement séquentiellement, p. ex. du type à approximations successives avec convertisseur numérique/analogique pour fournir des valeurs de référence au convertisseur
A semiconductor device includes a first dielectric film, a resistor element disposed on the first dielectric film, and a second dielectric film disposed on the resistor element. The resistor element contains silicon, chromium, and carbon. The silicon concentration in the resistor element increases from a center part of the resistor element towards an upper surface of the resistor element, and also increases from the center part of the resistor element towards a lower surface of the resistor element.
H01L 23/522 - Dispositions pour conduire le courant électrique à l'intérieur du dispositif pendant son fonctionnement, d'un composant à un autre comprenant des interconnexions externes formées d'une structure multicouche de couches conductrices et isolantes inséparables du corps semi-conducteur sur lequel elles ont été déposées
H01L 21/02 - Fabrication ou traitement des dispositifs à semi-conducteurs ou de leurs parties constitutives
H01L 21/768 - Fixation d'interconnexions servant à conduire le courant entre des composants distincts à l'intérieur du dispositif
H01L 23/532 - Dispositions pour conduire le courant électrique à l'intérieur du dispositif pendant son fonctionnement, d'un composant à un autre comprenant des interconnexions externes formées d'une structure multicouche de couches conductrices et isolantes inséparables du corps semi-conducteur sur lequel elles ont été déposées caractérisées par les matériaux
The performance of a semiconductor device can be improved. A plurality of protruding electrodes of a semiconductor chip includes: a plurality of first protruding electrodes arranged at positions overlapping a first region of an insulating layer, a plurality of second protruding electrodes arranged at positions overlapping a second region of the insulating layer, and a plurality of third protruding electrodes arranged at positions overlapping a third region of the insulating layer. The plurality of first protruding electrodes is arranged at a first pitch, the plurality of second protruding electrodes is arranged at a second pitch, and the plurality of third protruding electrodes is arranged at a third pitch different from each of the first pitch and the second pitch.
The reliability of a semiconductor device is improved. In this disclosure, a gate insulating film is formed on a silicon carbide semiconductor substrate in a process using a material gas containing a halogen element and a metal element by an ALD method.
H01L 21/04 - Fabrication ou traitement des dispositifs à semi-conducteurs ou de leurs parties constitutives les dispositifs ayant des barrières de potentiel, p. ex. une jonction PN, une région d'appauvrissement ou une région de concentration de porteurs de charges
H01L 29/16 - Corps semi-conducteurs caractérisés par les matériaux dont ils sont constitués comprenant, mis à part les matériaux de dopage ou autres impuretés, seulement des éléments du groupe IV de la classification périodique, sous forme non combinée
H01L 29/66 - Types de dispositifs semi-conducteurs
H01L 29/78 - Transistors à effet de champ l'effet de champ étant produit par une porte isolée
29.
SEMICONDUCTOR DEVICE AND A METHOD OF MANUFACTURING THE SAME
For simplifying the dual-damascene formation steps of a multilevel Cu interconnect, a formation step of an antireflective film below a photoresist film is omitted. Described specifically, an interlayer insulating film is dry etched with a photoresist film formed thereover as a mask, and interconnect trenches are formed by terminating etching at the surface of a stopper film formed in the interlayer insulating film. The stopper film is made of an SiCN film having a low optical reflectance, thereby causing it to serve as an antireflective film when the photoresist film is exposed.
H01L 21/8238 - Transistors à effet de champ complémentaires, p.ex. CMOS
H01L 23/00 - Détails de dispositifs à semi-conducteurs ou d'autres dispositifs à l'état solide
H01L 23/522 - Dispositions pour conduire le courant électrique à l'intérieur du dispositif pendant son fonctionnement, d'un composant à un autre comprenant des interconnexions externes formées d'une structure multicouche de couches conductrices et isolantes inséparables du corps semi-conducteur sur lequel elles ont été déposées
H01L 23/525 - Dispositions pour conduire le courant électrique à l'intérieur du dispositif pendant son fonctionnement, d'un composant à un autre comprenant des interconnexions externes formées d'une structure multicouche de couches conductrices et isolantes inséparables du corps semi-conducteur sur lequel elles ont été déposées avec des interconnexions modifiables
H01L 23/528 - Configuration de la structure d'interconnexion
H01L 23/532 - Dispositions pour conduire le courant électrique à l'intérieur du dispositif pendant son fonctionnement, d'un composant à un autre comprenant des interconnexions externes formées d'une structure multicouche de couches conductrices et isolantes inséparables du corps semi-conducteur sur lequel elles ont été déposées caractérisées par les matériaux
30.
SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING THE SAME
A semiconductor device including an IGBT with improved switching characteristics is provided. Inside trenches formed inside a semiconductor substrate of an active cell, a trench gate electrode and a trench emitter electrode are formed through a gate insulating film. An n-type hole barrier region is formed inside the semiconductor substrate located between the trenches. A p-type base region is formed inside the hole barrier region. An n-type emitter region is formed inside the base region. A p-type floating region is formed inside the semiconductor substrate of an inactive cell. A depth of the floating region is shallower than each depth of the trenches, and is deeper than a depth of the base region.
H01L 29/739 - Dispositifs du type transistor, c.à d. susceptibles de répondre en continu aux signaux de commande appliqués commandés par effet de champ
H01L 29/10 - Corps semi-conducteurs caractérisés par les formes, les dimensions relatives, ou les dispositions des régions semi-conductrices avec des régions semi-conductrices connectées à une électrode ne transportant pas le courant à redresser, amplifier ou commuter, cette électrode faisant partie d'un dispositif à semi-conducteur qui comporte trois électrodes ou plus
H01L 29/66 - Types de dispositifs semi-conducteurs
31.
NON-VOLATILE MEMORY AND REWRITE CONTROL METHOD THEREOF
The present invention provides a non-volatile memory system capable of suppressing excessive stress to normal cells and ensuring data retention margin of normal cells. In one embodiment of the non-volatile memory system, it determines whether or not error correction is possible for addresses judged to fail in the erase verify process, counts the number of addresses determined to be error-correctable, and if the number of such addresses is less than or equal to a predetermined number, the erase process is determined to be normal.
The reliability of the semiconductor device is improved. A field plate electrode FP is formed inside the trench TR via an insulating film IF1. The other part of the field plate electrode FP is selectively retracted toward the bottom of the trench TR so that a part of the field plate electrode FP remains as a lead-out part FPa. A silicon oxide film OX1 is formed on the upper surface of the field plate electrode FP by thermal oxidation. The insulating film IF1 located on the upper surface TS of the semiconductor substrate SUB and the silicon oxide film OX1 are removed, and the insulating film IF1 is retracted so that its upper surface position is lower than the upper surface position of the field plate electrode FP.
H01L 29/423 - Electrodes caractérisées par leur forme, leurs dimensions relatives ou leur disposition relative ne transportant pas le courant à redresser, à amplifier ou à commuter
While suppressing the influence of voltage noise, the adjustment range of the power supply voltage generated based on the reference voltage is expanded. The semiconductor device includes a reference voltage generation circuit, a regulator, a buffer, and a voltage control circuit. The reference voltage generation circuit is configured to be able to adjust the reference voltage. The regulator is configured to be able to change the output ratio of the power supply voltage to the reference voltage based on the control signal. The semiconductor device further includes a voltage control circuit for outputting a voltage control signal to the regulator to switch the output ratio.
G11C 7/22 - Circuits de synchronisation ou d'horloge pour la lecture-écriture [R-W]Générateurs ou gestion de signaux de commande pour la lecture-écriture [R-W]
H02M 3/158 - Transformation d'une puissance d'entrée en courant continu en une puissance de sortie en courant continu sans transformation intermédiaire en courant alternatif par convertisseurs statiques utilisant des tubes à décharge avec électrode de commande ou des dispositifs à semi-conducteurs avec électrode de commande utilisant des dispositifs du type triode ou transistor exigeant l'application continue d'un signal de commande utilisant uniquement des dispositifs à semi-conducteurs avec commande automatique de la tension ou du courant de sortie, p. ex. régulateurs à commutation comprenant plusieurs dispositifs à semi-conducteurs comme dispositifs de commande finale pour une charge unique
The performance of an electronic device can be improved. The electronic device includes a wiring substrate, a semiconductor memory device disposed on the wiring substrate, and a semiconductor control device disposed on the wiring substrate. The wiring substrate includes a first fixed potential wiring and a second fixed potential wiring, and a plurality of signal wirings arranged between the first fixed potential wiring and the second fixed potential wiring. The plurality of signal wirings includes a first signal wiring adjacent to the first fixed potential wiring, a second signal wiring adjacent to the first signal wiring, and a third signal wiring adjacent to the second signal wiring. A first distance between the first signal wiring and the second signal wiring is smaller than a second distance between the second signal wiring and the third signal wiring.
H01L 23/538 - Dispositions pour conduire le courant électrique à l'intérieur du dispositif pendant son fonctionnement, d'un composant à un autre la structure d'interconnexion entre une pluralité de puces semi-conductrices se trouvant au-dessus ou à l'intérieur de substrats isolants
H01L 23/00 - Détails de dispositifs à semi-conducteurs ou d'autres dispositifs à l'état solide
H01L 25/065 - Ensembles consistant en une pluralité de dispositifs à semi-conducteurs ou d'autres dispositifs à l'état solide les dispositifs étant tous d'un type prévu dans une seule des sous-classes , , , , ou , p. ex. ensembles de diodes redresseuses les dispositifs n'ayant pas de conteneurs séparés les dispositifs étant d'un type prévu dans le groupe
H10B 80/00 - Ensembles de plusieurs dispositifs comprenant au moins un dispositif de mémoire couvert par la présente sous-classe
A semiconductor device is provided. The semiconductor device includes an input/output cell, a core logic circuit, a first power supply cell, a second power supply cell, a third power supply cell and a fourth power supply cell. Each of the power supply cells includes a protection circuit and a bidirectional diode.
H01L 27/02 - Dispositifs consistant en une pluralité de composants semi-conducteurs ou d'autres composants à l'état solide formés dans ou sur un substrat commun comprenant des éléments de circuit passif intégrés avec au moins une barrière de potentiel ou une barrière de surface
To provide a semiconductor device and a control method for a semiconductor device that realizes high-speed processing. The semiconductor device includes a storage unit, an encryption processing unit, and a hash processing unit. The data stored in the storage unit is transferred to the encryption processing unit for each pre-calculation data of the first calculation unit, the encryption processing unit applies the calculation processing to generate post-calculation data. The generated first calculation unit of the post-calculation data is transferred to the hash processing unit, the hash processing unit applies the hash calculation process to the post-calculation data of the second calculation unit. The post-calculation data is transferred to the storage unit, and the calculation processing and the hash calculation processing are performed in parallel.
G06F 21/72 - Protection de composants spécifiques internes ou périphériques, où la protection d'un composant mène à la protection de tout le calculateur pour assurer la sécurité du calcul ou du traitement de l’information dans les circuits de cryptographie
G06F 21/79 - Protection de composants spécifiques internes ou périphériques, où la protection d'un composant mène à la protection de tout le calculateur pour assurer la sécurité du stockage de données dans les supports de stockage à semi-conducteurs, p. ex. les mémoires adressables directement
G06F 21/85 - Protection des dispositifs de saisie, d’affichage de données ou d’interconnexion dispositifs d’interconnexion, p. ex. les dispositifs connectés à un bus ou les dispositifs en ligne
A field plate electrode FP and a gate electrode GE are formed inside a plurality of trenches TR1. An outer peripheral trench TR2 surrounds the plurality of trenches TR1 in plan view. A field plate electrode FP (lead-out portion FPa) is formed inside the outer peripheral trench TR2. The outer peripheral trench TR2 has an extending part TR2a extending in the Y direction, an extending part TR2b extending in the X direction, and a corner part TR2c extending in a direction different from the X and Y directions in plan view and connecting the extending part TR2a and the extending part TR2b. In the Y-direction, the distance L2 between the end part 10 of the closest trench TR1 closest to the extending part TR2a and the extending part TR2b is longer than the distance L3 between the end part 10 of the other trench TR1 and the extending part TR2b.
H01L 29/423 - Electrodes caractérisées par leur forme, leurs dimensions relatives ou leur disposition relative ne transportant pas le courant à redresser, à amplifier ou à commuter
A semiconductor device includes a semiconductor substrate, a first coil, a second coil, a third coil, and a fourth coil, an insulating layer, and a first shield. The semiconductor substrate has a device region and a peripheral region. The peripheral region is present around the device region in a plan view. The first coil and the second coil are arranged on the device region and are arranged in a first direction in a plan view. The third coil and the fourth coil are respectively opposed to the first coil and the second coil via the insulating layer. The first shield is arranged between the semiconductor substrate and the first and second coils and overlaps with the first coil and the second coil in a plan view. A width of the first shield in a second direction orthogonal to the first direction is larger than a width of the first coil in the second direction and a width of the second coil in the second direction. The first shield is electrically connected to a reference potential.
H01L 23/522 - Dispositions pour conduire le courant électrique à l'intérieur du dispositif pendant son fonctionnement, d'un composant à un autre comprenant des interconnexions externes formées d'une structure multicouche de couches conductrices et isolantes inséparables du corps semi-conducteur sur lequel elles ont été déposées
H01L 27/02 - Dispositifs consistant en une pluralité de composants semi-conducteurs ou d'autres composants à l'état solide formés dans ou sur un substrat commun comprenant des éléments de circuit passif intégrés avec au moins une barrière de potentiel ou une barrière de surface
39.
SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING THE SAME
A semiconductor substrate includes a p-type substrate body, an n-type buried layer on the p-type substrate body, and a p-type semiconductor layer on the n-type buried layer. A DTI region penetrates through the p-type semiconductor layer and the n-type buried layer, and reaches the p-type substrate body. An n-type semiconductor region, which is a cathode region of a Zener diode, and a p-type anode region of the Zener diode are formed in the semiconductor layer. The p-type anode region includes a p-type first semiconductor region formed under the n-type semiconductor region, and a p-type second semiconductor region formed under the p-type first semiconductor region. A PN junction is formed between the p-type first semiconductor region and the n-type semiconductor region. An impurity concentration of the p-type second semiconductor region is higher than an impurity concentration of the p-type first semiconductor region.
H01L 27/06 - Dispositifs consistant en une pluralité de composants semi-conducteurs ou d'autres composants à l'état solide formés dans ou sur un substrat commun comprenant des éléments de circuit passif intégrés avec au moins une barrière de potentiel ou une barrière de surface le substrat étant un corps semi-conducteur comprenant une pluralité de composants individuels dans une configuration non répétitive
H01L 27/08 - Dispositifs consistant en une pluralité de composants semi-conducteurs ou d'autres composants à l'état solide formés dans ou sur un substrat commun comprenant des éléments de circuit passif intégrés avec au moins une barrière de potentiel ou une barrière de surface le substrat étant un corps semi-conducteur comprenant uniquement des composants semi-conducteurs d'un seul type
H01L 29/66 - Types de dispositifs semi-conducteurs
40.
SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING THE SAME
A field plate electrode FP is formed inside the trench TR via an insulating film IF1. The insulating film IF1 is retracted so that the position of the upper surface of the insulating film IF1 is lower than the position of the upper surface of the field plate electrode FP. An embedded insulating film EF1 is formed to cover the field plate electrode FP and the insulating film IF1. The embedded insulating film EF1 is retracted so that the position of the upper surface of the embedded insulating film EF1 is lower than the position of the upper surface of the field plate electrode FP. A gate insulating film GI is formed inside the trench TR, and an insulating film IF2 is formed to cover the field plate electrode FP. A gate electrode is formed on the field plate electrode FP via the insulating film IF2.
H01L 29/423 - Electrodes caractérisées par leur forme, leurs dimensions relatives ou leur disposition relative ne transportant pas le courant à redresser, à amplifier ou à commuter
H01L 29/66 - Types de dispositifs semi-conducteurs
H01L 29/78 - Transistors à effet de champ l'effet de champ étant produit par une porte isolée
41.
SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING THE SAME
A dielectric film, which contacts a field plate electrode, is formed between the field plate electrode and a gate electrode, and a recess is formed at an upper surface of the dielectric film and between a drain region and the gate electrode.
To reduce on-resistance while suppressing a characteristic variation increase of a vertical MOSFET with a Super Junction structure, the vertical MOSFET includes a semiconductor substrate having an n-type drift region, a p-type base region formed on the surface of the n-type drift region, a plurality of p-type column regions disposed in the n-type drift region at a lower portion of the p-type base region by a predetermined interval, a plurality of trenches whose bottom surface reaches a position deeper than the p-type base region and that is disposed between the adjacent p-type column regions, a plurality of gate electrodes formed in the plurality of trenches, and an n-type source region formed on the side of the gate electrode in the p-type base region.
H01L 29/78 - Transistors à effet de champ l'effet de champ étant produit par une porte isolée
H01L 29/06 - Corps semi-conducteurs caractérisés par les formes, les dimensions relatives, ou les dispositions des régions semi-conductrices
H01L 29/10 - Corps semi-conducteurs caractérisés par les formes, les dimensions relatives, ou les dispositions des régions semi-conductrices avec des régions semi-conductrices connectées à une électrode ne transportant pas le courant à redresser, amplifier ou commuter, cette électrode faisant partie d'un dispositif à semi-conducteur qui comporte trois électrodes ou plus
H01L 29/417 - Electrodes caractérisées par leur forme, leurs dimensions relatives ou leur disposition relative transportant le courant à redresser, à amplifier ou à commuter
H01L 29/423 - Electrodes caractérisées par leur forme, leurs dimensions relatives ou leur disposition relative ne transportant pas le courant à redresser, à amplifier ou à commuter
H01L 29/66 - Types de dispositifs semi-conducteurs
43.
DEVICE AND METHOD OF SECURE DECRYPTION BY VIRTUALIZATION AND TRANSLATION OF PHYSICAL ENCRYPTION KEYS
Example implementations include a system of secure decryption by virtualization and translation of physical encryption keys, the system having a key translation memory operable to store at least one physical mapping address corresponding to at least one virtual key address, a physical key memory operable to store at least one physical encryption key at a physical memory address thereof; and a key security engine operable generate at least one key address translation index, obtain, from the key translation memory, the physical mapping address based on the key address translation index and the virtual key address, and retrieve, from the physical key memory, the physical encryption key stored at the physical memory address.
Semiconductor device has a cell region and a peripheral region, and has a drift layer, a trench, an gate dielectric film on an inner wall of the trench, a gate electrode, and a p-type first semiconductor region below the trench in the cell region on a semiconductor substrate. Further, in the peripheral region on the semiconductor substrate, p-type second semiconductor region is formed in the same layer as the p-type first semiconductor region, a width of the p-type first semiconductor region and a width of the p-type second semiconductor region are different.
H01L 29/16 - Corps semi-conducteurs caractérisés par les matériaux dont ils sont constitués comprenant, mis à part les matériaux de dopage ou autres impuretés, seulement des éléments du groupe IV de la classification périodique, sous forme non combinée
H01L 29/66 - Types de dispositifs semi-conducteurs
H01L 29/78 - Transistors à effet de champ l'effet de champ étant produit par une porte isolée
Providing a semiconductor device that can suppress the heat generation in a transformer. The semiconductor device comprises first, second, third and fourth coils, a lead wire, and an insulating layer. The lead wire is formed on the same layer as the first and second coils. The first and second coils are adjacent to each other through the lead wire in a plan view and are electrically connected in series through the lead wire. The insulating layer covers the first and second coils, and the lead wire. The third coil is formed on the first coil so as to face the first coil through the insulating layer. The fourth coil is formed on the second coil so as to face the second coil through the insulating layer. The third and fourth coils are adjacent to each other in a plan view and are electrically connected to each other.
H01L 23/522 - Dispositions pour conduire le courant électrique à l'intérieur du dispositif pendant son fonctionnement, d'un composant à un autre comprenant des interconnexions externes formées d'une structure multicouche de couches conductrices et isolantes inséparables du corps semi-conducteur sur lequel elles ont été déposées
H01L 23/528 - Configuration de la structure d'interconnexion
H01L 27/01 - Dispositifs consistant en une pluralité de composants semi-conducteurs ou d'autres composants à l'état solide formés dans ou sur un substrat commun comprenant uniquement des éléments à film mince ou à film épais formés sur un substrat isolant commun
09 - Appareils et instruments scientifiques et électriques
42 - Services scientifiques, technologiques et industriels, recherche et conception
Produits et services
Clock generators for computers; oscillators; frequency
synthesizers; central processing unit [CPU] clocks;
resonators; integrated circuits; electronic integrated
circuits; large scale integrated circuits; semiconductors;
semiconductor chips; semiconductor chipsets;
microprocessors; semi-conductor memories; electronic
semi-conductors; circuit boards; chips [integrated
circuits]; computer software; computer programs; computer
hardware and software for use in implementing the Internet
of Things [IoT]; computer hardware; computer software
platforms, recorded or downloadable; computers and computer
peripherals; DC/DC converters; AC/DC converters; converters,
electric; electrical power supplies; components for
electrical power supplies; accessories for electrical power
supplies; electronic power control machines and apparatus;
power control devices; electronic power supplies; electric
current control devices; power distribution or control
machines and apparatus; rotary converters; phase modifiers;
solar batteries; accumulators [batteries]; electrical cells
and batteries; current sensors and testers for measuring
semiconductor characteristics; electric or magnetic meters
and testers; electric wires and cables; telecommunication
machines and apparatus; personal digital assistants; vehicle
drive training simulators; sports training simulators;
laboratory apparatus and instruments; photographic machines
and apparatus; cinematographic machines and apparatus;
optical machines and apparatus; measuring or testing
machines and instruments; magnetic cores; resistance wires;
electrodes; game programs for home video game machines;
electronic circuits and CD-ROMs recorded with programs for
hand-held games with liquid crystal displays; phonograph
records; downloadable music files; downloadable image files;
recorded video discs and video tapes; electronic
publications; exposed cinematographic films; exposed slide
films; slide film mounts; apparatus for recording,
transmission or reproduction of sound or images; magnetic
data carriers and recording discs; data processing apparatus
and computers; electronic agendas; amplifiers; antennas; bar
code readers; electric cables; fiber optic cables; encoded
magnetic cards; cassette players; commutators; compact discs
[audio-video]; computer game programs; computer memories;
recorded or downloadable computer programs; computers;
printers for use with computers; electric contacts; control
panels for power distributing; magnetic data media; optical
data media; optical discs; blank magnetic discs; disk drives
for computers; downloadable electronic publications;
integrated circuit cards; inverters [electricity]; lasers,
not for medical purposes; magnetic tapes; meters; modems;
electric monitoring apparatus; monitors for computer; mice
for computers; digital color photocopiers; portable
telephones; radio pagers; optical character readers; remote
control apparatus; electric resistances; scanners for
computer; electric sockets; sound recording apparatus; sound
recording magnetic discs and video tapes; sound reproducing
apparatus; sound transmitting apparatus; personal stereos;
electric switches; switches; telephone apparatus;
thermostats; telecommunication transmitters; video
cassettes; video game cartridges; video recorders; video
telephones; air-gas producers for laboratory use;
thermostats for laboratory use; hygrostats for laboratory
use; glassware for laboratory experiments; porcelain
instruments for laboratory experiments; furnaces for
laboratory experiments; laboratory experimental machines and
apparatus; models/specimens for laboratory use; tilting pan
heads [for laboratory use]; cameras; range finders;
photo-developing/printing/enlarging or finishing apparatus;
tripods [for cameras]; bellows [photography]; spools; slide
projectors; self-timers; power supply equipment for
photography flash bulbs; flash lamps; viewfinders; lens
hoods; flash guns; shutter releases; optical lenses;
exposure meters; projectors [projection apparatus];
transparent sheets [exposed films] for overhead projectors;
photograph developing or finishing apparatus;
cinematographic cameras; projection screens; editing
machines for movie films; lens barrels [for telescopes];
tripods [for telescopes]; periscopes; binoculars; reflectors
[for telescopes]; prisms [telescopes]; telescopes;
magnifying glasses; metallurgical microscopes; biological
microscopes; polarizing microscopes; stereoscopes;
microscopes; temperature indicators; gasometers;
thermometers; water meters; balances/scales; tape measures;
masu [Japanese box-shaped volume measure]; planimeters;
rules; standard-unit measuring machines and apparatus;
pressure gauges/manometers; level gauges; acoustic meters;
tachometers; accelerometers; refractometers; luminoflux
meters; photometers; altimeters; hygrometers;
illuminometers; vibration gauges; noise meters; logs;
speedometers [speed indicators]; calorimeters;
viscosimeters; densitometers/concentration meters;
gravimeters/aerometers; densimeters [density meters];
dynamometers; flowmeters; derived-unit measuring machines
and apparatus; angle gauges; angle dividing apparatus
[measuring instruments]; spherometers; inclinometers;
interferometers; straightness testers; projectors;
graduation checkers [calibration checkers]; length gauges;
screw-thread measuring machines and instruments;
comparators; surface roughness testers; flatness testers;
precision measuring machines and instruments; automatic
pressure controllers; automatic liquid-flow controllers;
automatic fluid-composition controllers; automatic
liquid-level controllers; automatic temperature controllers;
automatic combustion controllers; automatic vacuum
controllers; automatic calorie controllers; programmable
logic controllers; automatic adjusting/regulating machines
and instruments; metal compression testers; metal hardness
testers; metal strength testers; rubber testing machines;
concrete testing machines; cement testing machines; textile
testing machines; plastic testing machines; lumber testing
machines; material testing machines and instruments;
alidades; meteorological instruments; base plates for
measuring instruments; distance measuring machines or
apparatus [range finders]; clinometers; magnetic compasses;
compass needles; gyro compasses; gyromagnetic compasses;
analysis instruments for photogrammetric purposes; levels
[spirit levels]; precision theodolites; measuring rods;
surveying chains; electronic target location apparatus;
transits for surveying; levelling rods for surveying;
sextants; surveying machines and instruments; meridian
transits; astronomical spectroscopes; zenith telescopes;
astrometric measuring apparatus and instruments; electronic
charts for identifying hiding-power of paint; rust-formation
testing pieces; relays; circuit breakers; power controllers;
current rectifiers; connectors; circuit closers; capacitors;
resistors; distributing boxes; distribution boards
[electricity]; fuses; lightning arresters; transformers;
induction voltage regulators; reactors [electricity]; phase
meters; oscillographs; circuit testers; antenna measuring
apparatus; detectors; magnetic measuring apparatus;
frequency meters; vacuum tube characteristic measuring
apparatus; watt hour meters; ammeters; wattmeters;
oscillators; electrical power testers; interphones;
automatic telephone exchange apparatus; manual telephone
exchange apparatus; telephone sets; teletypewriters;
automatic telegraph apparatus; phototelegraphy apparatus;
manual telegraph apparatus; facsimile machines; audio
frequency transmission apparatus; cable-type
carrier-frequency apparatus; power-line-type
frequency-carrier apparatus; open-wire-type
frequency-carrier apparatus; carrier-frequency repeaters;
transmission machines and apparatus for telecommunication;
television receivers; television transmitters; radio
receivers [radios]; radio transmitters; broadcasting
machines and apparatus; portable radio communication
apparatus; aeronautical radio communication apparatus;
multichannel radio communication apparatus for fixed
stations; monochannel radio communication apparatus for
fixed stations; radio communication apparatus for vehicles;
marine radio communication apparatus; radio communication
machines and apparatus; navigation apparatus for vehicles;
beacon apparatus; direction finders; radar apparatus; LORAN
apparatus; radio machines and apparatus; remote control
telemetering apparatus; loudspeakers/megaphones; compact
disc players; juke boxes; tape recorders; electric
phonographs; record players; audio frequency devices and
apparatus; video disc players; video frequency devices and
apparatus; cabinets for loudspeakers; coils, electric;
magnetic tape erasers; magnetic tape cleaners; magnetic head
erasers; magnetic head cleaners; speakers; stands and racks
for telecommunication machines and apparatus; dials [for
photographic transparencies]; fuses for communication
apparatus; tapes for tape recorders; change-over switches;
distribution boards; pickups; video tapes; indicator lights
for telecommunication apparatus; electrical phonomotors;
headphones; protectors for telecommunication apparatus;
microphones; record cleaners [cleaning apparatus for
phonograph records]; blank record discs; cleaning apparatus
for phonograph records; parts and accessories for
telecommunication machines and apparatus; geiger counters;
cyclotrons; X-ray apparatus, not for medical use; betatrons,
not for medical use; magnetic surveying machines; magnetic
object detectors; shielding cases for magnetic discs;
seismic wave surveying machines; hydrophone machines and
apparatus; ultrasonic depth sounders; ultrasonic flaw
detectors; ultrasonic sensors; electrostatic copying
machines; remote control apparatus for opening and closing
doors; electronic microscopes; desk-top computers; word
processors; X-rays tubes, not for medical use; tubes for
photographic instruments; vacuum tubes; rectifier tubes;
cathode ray tubes; discharge tubes; electron tubes;
thermistors; diodes; transistors; electronic circuits and
CD-ROMs recorded with program for handheld liquid crystal
display game; pre-recorded video discs and tapes;
semi-conductor devices; semi-conductor integrated circuits
including CPU; electronic circuits; magnetic drums, magnetic
discs, magnetic tapes, CD-ROMs, electronic circuits and
other storage mediums recorded with a program for developing
and designing of semi-conductor devices, integrated circuits
including CPU, electronic circuits and other electronic
machines; microcontrollers; microcomputers; programs for
microcomputers; circuits for testing/evaluating of
microcomputers, microcontrollers, microprocessors and
semi-conductor integrated circuits; semi-conductor
integrated circuits; semi-conductor commutators;
downloadable electronic publications for semi-conductors;
silicon wafers for semi-conductors; DVD players; DVD
recorders and digital video cameras; digital still cameras;
video cameras; liquid crystal displays; plasma display
television sets; light emitting diodes [LED]; printed
circuit boards; notebook computers; handheld computers;
personal digital assistants [PDA]; data processing
apparatus; electrostatic copying machines; printers; cathode
ray tube displays; computer peripheral equipment; compact
discs [CD]; digital versatile disks [DVD]; encoded magnetic,
optical and integrated circuit cards; magnetic cards; video
projectors; semi-conductor testing apparatus. Design of electronic circuit, semiconductor devices,
integrated circuits and large scale integrated circuits;
design and testing of semiconductor for others; designing of
machines, apparatus, instruments [including their parts] or
systems composed of such machines, apparatus and
instruments; design of semiconductor devices; design of
semiconductor chips; design of integrated circuits; design
and updating of computer software; provision of
technological information in relation to semiconductor
including integrated circuits; design of computer-simulated
models; computer programming; technological advice relating
to computers, automobiles and industrial machines; testing
or research in relation to electronic circuit, semiconductor
devices, integrated circuits and large scale integrated
circuits; design, development, testing and inspection of
power management integrated circuits (PMICs); testing and
research services relating to machines, apparatus and
instruments; software as a service [SaaS]; platform as a
service [PaaS]; leasing of a database server to third
parties; rental of computers; providing computer programs on
data networks; rental of laboratory apparatus and
instruments; providing meteorological information;
architectural design; surveying; geological surveys;
testing, inspection and research services in the fields of
pharmaceuticals, cosmetics and foodstuffs; research on
building construction or city planning; testing and research
services in the field of preventing pollution; testing and
research services in the field of electricity; testing and
research services in the field of civil engineering;
testing, inspection and research services in the fields of
agriculture, livestock breeding and fisheries; rental of
measuring apparatus; rental of telescopes; rental of
technical drawing instruments; design and development of
computer hardware and software; authenticating works of art;
calibration [measuring]; computer software design; computer
system design; computer systems analysis; consultancy in the
field of computer hardware; consultation in environment
protection; conversion of data or documents from physical to
electronic media; creating and maintaining web sites for
others; data conversion of computer programs and data, not
physical conversion; design of interior decor; dress
designing; duplication of computer programs; engineering;
graphic arts designing; hosting computer sites [web sites];
industrial design; installation of computer software;
maintenance of computer software; material testing;
packaging design; physics [research]; technical project
studies; quality control; recovery of computer data; rental
of computer software; research and development for others;
updating of computer software; styling [industrial design];
technical research; textile testing; underwater exploration;
vehicle roadworthiness testing; consultancy and advice in
the field of design of semi-conductor devices; testing,
checking and research of semi-conductor devices; providing
information about design of semi-conductor
devices/consultancy and advice in the field of design of
semi-conductor devices, testing, checking and research in
the field of semi-conductor devices; guidance and advice in
the field of design of semi-conductor chips; testing,
checking and research in the field of semi-conductor
chips/consultancy and advice in the field of design of
semi-conductor chips, testing, checking and research in the
field of semi-conductor chips; consultancy and advice in the
field of design of integrated circuits; testing, checking
and research in the field of integrated circuits; providing
information about design of integrated circuits/consultancy
and advice in the field of design of integrated circuits,
testing, checking and research in the field of integrated
circuits; design of microcomputers; consultancy and advice
in the field of design of microcomputers; testing, checking
and research in the field of microcomputers; providing
information about design of microcomputers/consultancy and
advice in the field of design of microcomputers, testing,
checking and research in the field of microcomputer; design
of IC cards; consultancy and advice in the field of design
of IC cards; testing, checking and research in the field of
IC cards; providing information about design of IC
cards/consultancy and advice in the field of design of IC
cards, testing, checking and research in the field of IC
cards; design of semi-conductor memory; consultancy and
advice in the field of design of semi-conductor memory;
testing, checking and research in the field of
semi-conductor memory; providing information about design of
semi-conductor memory/consultancy and advice in the field of
design of semi-conductor memory, testing, checking and
research in the field of semi-conductor memory; design of
circuit boards; consultancy and advice in the field of
design of circuit boards; testing, checking and research in
the field of circuit boards; providing information about
design of circuit boards/consultancy and advice in the field
of design of circuit boards, testing, checking and research
in the field of circuit boards; design of semi-conductor
manufacturing apparatus; consultancy and advice in the field
of design of semi-conductor manufacturing apparatus;
testing, checking and research in the field of
semi-conductor manufacturing apparatus; providing
information about design of semi-conductor manufacturing
apparatus/consultancy and advice in the field of design of
semi-conductor manufacturing apparatus, testing, checking
and research in the field of semi-conductor manufacturing
apparatus; design of semi-conductor testing apparatus;
consultancy and advice in the field of design of
semi-conductor testing apparatus; testing, checking and
research in the field of semi-conductor testing apparatus;
providing information about design of semi-conductor testing
apparatus/consultancy and advice in the field of design of
semi-conductor testing apparatus, testing, checking and
research in the field of semi-conductor testing apparatus;
design of semi-conductor checking apparatus; consultancy and
advice in the field of design of semi-conductor checking
apparatus; testing, checking and research in the field of
semi-conductor checking apparatus; providing information
about design of semi-conductor checking
apparatus/consultancy and advice in the field of design of
semi-conductor checking apparatus, testing, checking and
research in the field of semi-conductor checking apparatus;
information relating to the use of electronic calculators;
information relating to the use of microcomputers; provision
of technological information relating to the use of
semi-conductor manufacturing apparatus; information relating
to the use of semi-conductor testing apparatus; information
relating to the use of semi-conductor checking apparatus;
computer programming and maintenance of computer software
and CAD software; rental of computer software and CAD
software; research, developing and designing of
semi-conductor devices, integrated circuits, CPUs and
electronic circuits for others; surveys, advice,
consultation, and providing information in the field of
research, developing, and designing for others of
semi-conductors and devices, integrated circuits, CPUs and
electronic circuits; research, developing, designing,
programming and maintenance of computer software for others;
surveys, advice, consultation, and providing information in
the field of research, developing, designing, programming
and maintenance of computer software; preparation of
technical reports for others in the field of research,
developing, designing, programming and maintenance of
semi-conductor devices, integrated circuits, CPUs and
electronic circuits; technical writing for others in the
field of computer software; providing information in the
field of research, developing, and designing for others of
semi-conductor devices, integrated circuits, CPUs and
electronic circuits by means of a global computer network;
providing temporary use of on-line non-downloadable
applications software (for use in the field of
semi-conductor production, for use in electronic circuit
design); evaluation of technologies for manufacturing
semi-conductors for others; providing technology information
for research, developing and designing of semi-conductor
devices, integrated circuits, CPUs and electronic circuits;
mechanical testing and research; rental of semi-conductor
testing apparatus; providing information about rental of
semi-conductor testing apparatus; rental of semi-conductor
checking apparatus; providing information about rental of
semi-conductor checking apparatus; inspection of
semi-conductor manufacturing apparatus, semi-conductor
testing apparatus and semi-conductor checking apparatus;
providing information about inspection of semi-conductor
manufacturing apparatus, semi-conductor testing apparatus
and semi-conductor checking apparatus.
47.
SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING THE SAME
An anode region and a cathode region of a photodiode are formed in a semiconductor substrate. At a main surface of the semiconductor substrate, a plurality of first STI regions are formed on the cathode region, and an oxide film is formed between the plurality of first STI regions. A shield electrode is formed on the plurality of first STI regions and the oxide film. A thickness of each of the plurality of first STI regions is smaller than a thickness of second STI region.
H01L 23/528 - Configuration de la structure d'interconnexion
H01L 29/66 - Types de dispositifs semi-conducteurs
H01L 29/78 - Transistors à effet de champ l'effet de champ étant produit par une porte isolée
H01L 31/02 - Dispositifs à semi-conducteurs sensibles aux rayons infrarouges, à la lumière, au rayonnement électromagnétique d'ondes plus courtes, ou au rayonnement corpusculaire, et spécialement adaptés, soit comme convertisseurs de l'énergie dudit rayonnement e; Procédés ou appareils spécialement adaptés à la fabrication ou au traitement de ces dispositifs ou de leurs parties constitutives; Leurs détails - Détails
48.
SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING THE SAME
In a semiconductor substrate, an n-type cathode region, an n-type well region, and a p-type anode region are formed. An impurity concentration of the cathode region is higher than an impurity concentration of the well region. In plan view, the anode region includes the cathode region, and the well region includes the anode region and the cathode region. A depth of the well region from an upper surface of the semiconductor substrate is greater than a depth of the anode region from the upper surface of the semiconductor substrate. A depth of the cathode region from the upper surface of the semiconductor substrate is greater than the respective depths of the anode region and the well region.
G05F 1/46 - Régulation de la tension ou de l'intensité là où la variable effectivement régulée par le dispositif de réglage final est du type continu
G05F 3/18 - Régulation de la tension ou du courant là où la tension ou le courant sont continus utilisant des dispositifs non commandés à caractéristiques non linéaires consistant en des dispositifs à semi-conducteurs en utilisant des diodes Zener
H01L 27/06 - Dispositifs consistant en une pluralité de composants semi-conducteurs ou d'autres composants à l'état solide formés dans ou sur un substrat commun comprenant des éléments de circuit passif intégrés avec au moins une barrière de potentiel ou une barrière de surface le substrat étant un corps semi-conducteur comprenant une pluralité de composants individuels dans une configuration non répétitive
H01L 29/66 - Types de dispositifs semi-conducteurs
A semiconductor device includes a scratchpad memory, a memory controller, and a MAC (multiply-accumulation) unit. The scratchpad memory is configured to store image data of N channels and includes M memories which are individually accessible, wherein M is integer of at least 2 and N is an integer of at least 2. The memory controller controls access to the scratchpad memory such that pixel data of the N channels which are arranged at a same position in image data of the N channels are respectively stored in difference memories in the M memories. The MAC unit includes a plurality of calculators to calculate pixel data of the N channels read from the scratchpad memory by using the memory controller and a weight parameter.
G06F 12/1045 - Traduction d'adresses utilisant des moyens de traduction d’adresse associatifs ou pseudo-associatifs, p. ex. un répertoire de pages actives [TLB] associée à une mémoire cache de données
G06F 7/544 - Méthodes ou dispositions pour effectuer des calculs en utilisant exclusivement une représentation numérique codée, p. ex. en utilisant une représentation binaire, ternaire, décimale utilisant des dispositifs n'établissant pas de contact, p. ex. tube, dispositif à l'état solideMéthodes ou dispositions pour effectuer des calculs en utilisant exclusivement une représentation numérique codée, p. ex. en utilisant une représentation binaire, ternaire, décimale utilisant des dispositifs non spécifiés pour l'évaluation de fonctions par calcul
G06F 12/06 - Adressage d'un bloc physique de transfert, p. ex. par adresse de base, adressage de modules, extension de l'espace d'adresse, spécialisation de mémoire
An A/D conversion control circuit includes a scan group control unit and a FIFO unit. The scan group control unit includes an input reception unit and an arbitration unit. The FIFO unit includes a plurality of pointer control units provided correspondingly to the plurality of FIFO memories, respectively. Each of the pointer control units clears or changes a position of a write pointer/read pointer of the corresponding FIFO memory at the timing of at least any of the start, interruption, and/or restart of the corresponding scan group according to the priority of the scan group.
G06F 13/28 - Gestion de demandes d'interconnexion ou de transfert pour l'accès au bus d'entrée/sortie utilisant le transfert par rafale, p. ex. acces direct à la mémoire, vol de cycle
51.
INFORMATION PROCESSING APPARATUS, INFORMATION PROCESSING METHOD, SEMICONDUCTOR DEVICE, AND POWER CONVERSION DEVICE
To be able to detect abnormalities more appropriately. An information processing apparatus includes an acquisition circuit and an estimation circuit. It acquires information indicating a temperature transition and a current transition related to a semiconductor element of a power conversion device and an electric motor. And it estimates an anomaly of a specific type in a system based on the acquired information.
H02P 29/68 - Commande ou détermination de la température du moteur ou de l'entraînement basée sur la température d’un composant d’entraînement ou d’un composant semi-conducteur
H02M 1/32 - Moyens pour protéger les convertisseurs autrement que par mise hors circuit automatique
52.
SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING THE SAME
A trench TR1 and a trench TR2 are formed in a semiconductor substrate SUB so as to reach a predetermined depth from the upper surface (TS) of the semiconductor substrate SUB. A field plate electrode FP is formed at a lower portion of the trench TR1, and a gate electrode GE1 is formed at an upper portion of the trench TR1. A gate electrode GE2 is formed inside the trench TR2. The depth of the trench TR1 is deeper than the depth of the trench TR2. The trench TR1 extends in the Y direction, and the trench TR2 extends in the X direction. The trench TR1 and the trench TR2 are in communication with each other. The gate electrode GE1 and the gate electrode GE2 are integrated with each other.
On a semiconductor substrate having an SOI region and a bulk silicon region formed on its upper surface, epitaxial layers are formed in source and drain regions of a MOSFET formed in the SOI region, and no epitaxial layer is formed in source and drain regions of a MOSFET formed in the bulk silicon region. By covering the end portions of the epitaxial layers with silicon nitride films, even when diffusion layers are formed by implanting ions from above the epitaxial layers, it is possible to prevent the impurity ions from being implanted down to a lower surface of a silicon layer.
H01L 27/12 - Dispositifs consistant en une pluralité de composants semi-conducteurs ou d'autres composants à l'état solide formés dans ou sur un substrat commun comprenant des éléments de circuit passif intégrés avec au moins une barrière de potentiel ou une barrière de surface le substrat étant autre qu'un corps semi-conducteur, p.ex. un corps isolant
H01L 21/8238 - Transistors à effet de champ complémentaires, p.ex. CMOS
H01L 29/417 - Electrodes caractérisées par leur forme, leurs dimensions relatives ou leur disposition relative transportant le courant à redresser, à amplifier ou à commuter
H01L 29/66 - Types de dispositifs semi-conducteurs
H01L 29/78 - Transistors à effet de champ l'effet de champ étant produit par une porte isolée
A semiconductor device capable of suppressing variation in breakdown voltage is provided. The semiconductor device includes a semiconductor substrate, an insulating film, a first electrode and a second electrode, and a semi-insulating film. The semiconductor substrate has a first surface. The semiconductor substrate has, in plan view, an element region and a termination region surrounding the element region. The semiconductor substrate has a first impurity region formed on a first surface in the termination region. The semi-insulating film is disposed so as to extend over the insulating film between the first electrode and the second electrode in plan view. The semi-insulating film includes silicon and nitrogen.
H01L 29/739 - Dispositifs du type transistor, c.à d. susceptibles de répondre en continu aux signaux de commande appliqués commandés par effet de champ
Performance of a semiconductor device is improved. In a semiconductor substrate (SUB), a trench TR1 and a trench TR2 are formed so as to reach a predetermined depth from an upper surface (TS) of the semiconductor substrate (SUB). A field-plate electrode (FP) is formed at a lower portion of the trench TR1, and a gate-electrode GE1 is formed at an upper portion of the trench TR1. A gate electrode GE2 is formed inside the trench TR2. The depth of the trench TR1 is deeper than the depth of the trench TR2. The trench TR1 is surrounded by the trench TR2 in plan view.
H01L 23/522 - Dispositions pour conduire le courant électrique à l'intérieur du dispositif pendant son fonctionnement, d'un composant à un autre comprenant des interconnexions externes formées d'une structure multicouche de couches conductrices et isolantes inséparables du corps semi-conducteur sur lequel elles ont été déposées
H01L 23/528 - Configuration de la structure d'interconnexion
H01L 29/423 - Electrodes caractérisées par leur forme, leurs dimensions relatives ou leur disposition relative ne transportant pas le courant à redresser, à amplifier ou à commuter
A switching converter is presented. The switching converter has a high side power switch coupled to a low side power switch at a switching node, a driver and a timing circuit. The driver generates a drive signal having a on-time to drive the high side power switch. The timing circuit generates a control signal to adjust the on-time during a load transient period.
H02M 3/158 - Transformation d'une puissance d'entrée en courant continu en une puissance de sortie en courant continu sans transformation intermédiaire en courant alternatif par convertisseurs statiques utilisant des tubes à décharge avec électrode de commande ou des dispositifs à semi-conducteurs avec électrode de commande utilisant des dispositifs du type triode ou transistor exigeant l'application continue d'un signal de commande utilisant uniquement des dispositifs à semi-conducteurs avec commande automatique de la tension ou du courant de sortie, p. ex. régulateurs à commutation comprenant plusieurs dispositifs à semi-conducteurs comme dispositifs de commande finale pour une charge unique
H02M 1/00 - Détails d'appareils pour transformation
H02M 1/08 - Circuits spécialement adaptés à la production d'une tension de commande pour les dispositifs à semi-conducteurs incorporés dans des convertisseurs statiques
57.
SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING THE SAME
A semiconductor device includes: a first semiconductor chip mounted on a chip mounting portion via a first bonding material; and a second semiconductor chip mounted on the first semiconductor chip via a second bonding material. The first semiconductor chip includes: a protective film; and a first pad electrode exposed from the protective film in a first opening portion of the protective film. The second semiconductor chip is mounted on the first pad electrode of the first semiconductor chip via the second bonding material. The second bonding material includes: a first member being in contact with the first pad electrode; and a second member interposed between the first member and the second semiconductor chip. The first member is a conductive bonding material of a film shape, and the second member is an insulating bonding material of a film shape.
H01L 23/00 - Détails de dispositifs à semi-conducteurs ou d'autres dispositifs à l'état solide
H01L 21/683 - Appareils spécialement adaptés pour la manipulation des dispositifs à semi-conducteurs ou des dispositifs électriques à l'état solide pendant leur fabrication ou leur traitementAppareils spécialement adaptés pour la manipulation des plaquettes pendant la fabrication ou le traitement des dispositifs à semi-conducteurs ou des dispositifs électriques à l'état solide ou de leurs composants pour le maintien ou la préhension
H01L 23/31 - Encapsulations, p. ex. couches d’encapsulation, revêtements caractérisées par leur disposition
The present document relates to a processing device and a method for performing time stamping of data at a high level of integrity such as ASIL (Automotive Safety Integrity Level) D. The processing device processes a data frame comprising data. Furthermore, upon reception of a trigger which is indicative of the processing of the data frame, the processing device captures a time stamp using a primary timer. Next, the processing device generates validation data based on the data frame and the time stamp. In addition, the processing device stores the validation data in conjunction with the data frame and the time stamp in a memory module.
H04L 1/00 - Dispositions pour détecter ou empêcher les erreurs dans l'information reçue
H04L 67/12 - Protocoles spécialement adaptés aux environnements propriétaires ou de mise en réseau pour un usage spécial, p. ex. les réseaux médicaux, les réseaux de capteurs, les réseaux dans les véhicules ou les réseaux de mesure à distance
H01L 23/60 - Protection contre les charges ou les décharges électrostatiques, p. ex. écrans Faraday
H01L 23/48 - Dispositions pour conduire le courant électrique vers le ou hors du corps à l'état solide pendant son fonctionnement, p. ex. fils de connexion ou bornes
H01L 23/528 - Configuration de la structure d'interconnexion
H01L 25/065 - Ensembles consistant en une pluralité de dispositifs à semi-conducteurs ou d'autres dispositifs à l'état solide les dispositifs étant tous d'un type prévu dans une seule des sous-classes , , , , ou , p. ex. ensembles de diodes redresseuses les dispositifs n'ayant pas de conteneurs séparés les dispositifs étant d'un type prévu dans le groupe
A semiconductor device includes a first source electrode coupled to a first source terminal by a connection portion and having first and second slits on two opposite sides, a second source electrode coupled to a second source terminal, a Kelvin pad formed independently of the first source electrode, a power MOSFET coupled between the first source electrode and a drain terminal, a sense MOSFET coupled between the second source electrode and the drain terminal, a first wire coupled between a first source potential extraction port set at the first slit and the Kelvin pad, a second wire coupled between a second source potential extraction port set at the second slit and the Kelvin pad, wherein the connection portion has third and fourth slits corresponding to the first and second slits.
The semiconductor device includes a pair of gate-electrodes GE formed inside the pair of trenches TR via an gate insulating film (GI), respectively. The pair of column regions PC are spaced apart from each other in the Y-direction. The pair of trenches TR are provided apart from each other in the Y direction, are provided between the pair of column regions PC in the Y direction, and extend in the X direction. The ends of the pair of trenches TR in the X direction are connected to each other by a connecting portion TRa extending in the Y direction. The connection portion TRa is integrated with the pair of trenches TR. The pair of column regions PC extend in the X direction along the pair of trenches TR, and extend in the X direction toward the outer edge of the semiconductor substrate beyond the connection portion TRa.
H01L 29/78 - Transistors à effet de champ l'effet de champ étant produit par une porte isolée
H01L 29/06 - Corps semi-conducteurs caractérisés par les formes, les dimensions relatives, ou les dispositions des régions semi-conductrices
H01L 29/10 - Corps semi-conducteurs caractérisés par les formes, les dimensions relatives, ou les dispositions des régions semi-conductrices avec des régions semi-conductrices connectées à une électrode ne transportant pas le courant à redresser, amplifier ou commuter, cette électrode faisant partie d'un dispositif à semi-conducteur qui comporte trois électrodes ou plus
62.
SEMICONDUCTOR DEVICE INCLUDING FIELD EFFECT TRANSISTOR FORMED ON SOI SUBSTRATE
In a semiconductor device according to an embodiment, a thickness of a semiconductor layer of an SOI substrate on which a field effect transistor constituting an analog circuit is formed is set to 2 nm or more and 24 nm or less.
H01L 29/78 - Transistors à effet de champ l'effet de champ étant produit par une porte isolée
H01L 27/12 - Dispositifs consistant en une pluralité de composants semi-conducteurs ou d'autres composants à l'état solide formés dans ou sur un substrat commun comprenant des éléments de circuit passif intégrés avec au moins une barrière de potentiel ou une barrière de surface le substrat étant autre qu'un corps semi-conducteur, p.ex. un corps isolant
H01L 29/06 - Corps semi-conducteurs caractérisés par les formes, les dimensions relatives, ou les dispositions des régions semi-conductrices
H01L 29/10 - Corps semi-conducteurs caractérisés par les formes, les dimensions relatives, ou les dispositions des régions semi-conductrices avec des régions semi-conductrices connectées à une électrode ne transportant pas le courant à redresser, amplifier ou commuter, cette électrode faisant partie d'un dispositif à semi-conducteur qui comporte trois électrodes ou plus
H01L 29/423 - Electrodes caractérisées par leur forme, leurs dimensions relatives ou leur disposition relative ne transportant pas le courant à redresser, à amplifier ou à commuter
Systems and methods for injecting a current into are described. A switch converter can include a high-side switch and a low-side switch. A driver circuit can be configured to drive the high-side switch and the low-side switch in the switch converter. A controller can be configured to provide control signals to control the driver circuit. The driver circuit can further include a circuit configured to inject a current dip into a gate current outputted by the driver circuit to drive at least one of the high-side switch and the low-side switch.
H03K 17/16 - Modifications pour éliminer les tensions ou courants parasites
H02M 1/00 - Détails d'appareils pour transformation
H02M 1/088 - Circuits spécialement adaptés à la production d'une tension de commande pour les dispositifs à semi-conducteurs incorporés dans des convertisseurs statiques pour la commande simultanée de dispositifs à semi-conducteurs connectés en série ou en parallèle
H02M 1/44 - Circuits ou dispositions pour corriger les interférences électromagnétiques dans les convertisseurs ou les onduleurs
H02M 3/158 - Transformation d'une puissance d'entrée en courant continu en une puissance de sortie en courant continu sans transformation intermédiaire en courant alternatif par convertisseurs statiques utilisant des tubes à décharge avec électrode de commande ou des dispositifs à semi-conducteurs avec électrode de commande utilisant des dispositifs du type triode ou transistor exigeant l'application continue d'un signal de commande utilisant uniquement des dispositifs à semi-conducteurs avec commande automatique de la tension ou du courant de sortie, p. ex. régulateurs à commutation comprenant plusieurs dispositifs à semi-conducteurs comme dispositifs de commande finale pour une charge unique
64.
SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING THE SAME
A performance of a semiconductor device is improved. A gate insulating film is formed on a semiconductor substrate. A gate electrode is formed on the gate insulating film. A ferroelectric film and a metal film are formed between the gate insulating film and the gate electrode. A thickness of the metal film is smaller than a thickness of the ferroelectric film. The metal film is amorphous.
H10B 51/30 - Dispositifs de RAM ferro-électrique [FeRAM] comprenant des transistors ferro-électriques de mémoire caractérisés par la région noyau de mémoire
H01L 21/28 - Fabrication des électrodes sur les corps semi-conducteurs par emploi de procédés ou d'appareils non couverts par les groupes
H01L 29/51 - Matériaux isolants associés à ces électrodes
A semiconductor device or image processing system includes n interface circuit and a channel composite circuit. The interface circuit outputs a first packet including the line data of the k-th line included in the image data of the first channel, and then outputs a second packet including the line data of the k-th line included in the image data of the second channel. The channel combination circuit writes, to the memory, the line data of the k-th line included in the image data of the first channel to the first address area, and then writes the line data of the k-th line included in the image data of the second channel to the second address area that is consecutive to the first address area.
A balun circuit is disclosed. The balun circuit is provided between a transmitter and a common antenna terminal to which the transmitter and a receiver are coupled. The balun includes an inductor L1 coupled at one or both ends to the transmitter, an input node of the receiver, and an inductor L2 provided between ground or a first biasing power supply. The inductor L2 includes an inductor having a mutual inductance with the inductor L1. The inductor L2 is a variable inductor.
H03H 7/42 - Réseaux permettant de transformer des signaux équilibrés en signaux non équilibrés et réciproquement, p. ex. baluns
H03F 3/213 - Amplificateurs de puissance, p. ex. amplificateurs de classe B, amplificateur de classe C comportant uniquement des dispositifs à semi-conducteurs dans des circuits intégrés
The video data processing device includes at least one first functional module that performs first processing preset for each first processing unit data, at least one second functional module that performs second processing preset for each second processing unit data smaller than the first processing unit data, and a control unit that controls the execution order of pipeline processing for the first processing unit data by controlling the timing at which the first function module and the second function module operate. The control unit controls the subsequent stage so that the first function module and the second module are started in response to the completion of the respective processing in accordance with the end of the pre-stage.
According to one embodiment, a semiconductor device includes an arithmetic processing unit, a plurality of peripheral circuits which are controlled by the arithmetic processing unit, a timing management circuit which outputs a result of time measurement executed according to a request for the time measurement from each of the peripheral circuits to the peripheral circuit, and the timing management circuit executes the time measurement according to each request for the time measurement.
A semiconductor device capable of suppressing reduction in performance is provided. The semiconductor device includes: a processor; a DR processor including a DMA controller; a system memory; an internal bus to which the processor, the DR processor, and the system memory are connected; and a bus arbiter connected to the processor and the DR processor, the bus arbiter executing arbitration between access to the system memory by the processor and access to the system memory by the DMA controller in accordance with a predetermined priority order. Here, the DR processor includes a frequency circuit determining a frequency at which the access to the system memory by the DMA controller is not permitted by the arbitration made by the bus arbiter.
G06F 13/362 - Gestion de demandes d'interconnexion ou de transfert pour l'accès au bus ou au système à bus communs avec commande d'accès centralisée
G06F 13/16 - Gestion de demandes d'interconnexion ou de transfert pour l'accès au bus de mémoire
G06F 13/30 - Gestion de demandes d'interconnexion ou de transfert pour l'accès au bus d'entrée/sortie utilisant le transfert par rafale, p. ex. acces direct à la mémoire, vol de cycle avec commande prioritaire
A plurality of wires of a semiconductor device includes: a first wire connected to each of an end portion electrode and a first terminal of a plurality of terminals; and a second wire connected to each of a non-end portion electrode and a second terminal of the plurality of terminals. A loop height of the first wire is greater than a loop height of the second wire.
A control program capable of properly executing high-speed simulation is provided. The control program according to the present disclosure causes an information processing apparatus to execute a control method, the information processing apparatus including a virtual environment for executing a simulation target program. The virtual environment includes a bus master, an interconnect, and a bus slave connected to the bus master via the interconnect. The control method includes an access processing step of causing the bus master to execute the bus access to the bus slave in a different route depending on whether a pointer for executing the bus access from the bus master to the bus slave is held in a pointer holding section, and an operation executing step of causing the bus slave to execute a predetermined operation when being triggered by the bus access from the bus master.
A semiconductor device includes a first well region, a second well region, a body region, and a cathode region. The impurity concentration of the body region is higher than the impurity concentration of the first well region, and the impurity concentration of the second well region is higher than the impurity concentration of the body region. In plan view, the body region includes the cathode region, and the cathode region includes the second well region. The cathode region configures a cathode of a Zener diode, and the first well region, the second well region, and the body region configure an anode of the Zener diode.
H01L 27/02 - Dispositifs consistant en une pluralité de composants semi-conducteurs ou d'autres composants à l'état solide formés dans ou sur un substrat commun comprenant des éléments de circuit passif intégrés avec au moins une barrière de potentiel ou une barrière de surface
H01L 29/66 - Types de dispositifs semi-conducteurs
A semiconductor chip includes a semiconductor substrate and a multilayer wiring layer formed on the semiconductor substrate, and at least one layer of the multilayer wiring layer is formed with a conductive pattern. The conductive pattern is formed so as to continuously surround a lower inductor and an upper inductor in plan view.
H01L 25/16 - Ensembles consistant en une pluralité de dispositifs à semi-conducteurs ou d'autres dispositifs à l'état solide les dispositifs étant de types couverts par plusieurs des sous-classes , , , , ou , p. ex. circuit hybrides
H01L 23/00 - Détails de dispositifs à semi-conducteurs ou d'autres dispositifs à l'état solide
74.
SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING THE SAME
A switch circuit connects an external inspection device to a first internal circuit, a second internal circuit, or both the first internal circuit and the second internal circuit in a state where the external inspection device is connected to an external terminal. A switch control circuit selects a connection destination of the external inspection device in the switch circuit based on a test setting signal from outside.
A semiconductor device including: a first semiconductor chip having a first power transistor and a temperature sensing diode; and a second semiconductor chip having a second power transistor, but not having a temperature sensing diode.
H01L 25/16 - Ensembles consistant en une pluralité de dispositifs à semi-conducteurs ou d'autres dispositifs à l'état solide les dispositifs étant de types couverts par plusieurs des sous-classes , , , , ou , p. ex. circuit hybrides
H01L 23/00 - Détails de dispositifs à semi-conducteurs ou d'autres dispositifs à l'état solide
H01L 23/34 - Dispositions pour le refroidissement, le chauffage, la ventilation ou la compensation de la température
A capless regulator circuit is provided. The regulator circuit includes a power transistor that controls the supply of current to an external output terminal connected to a load; a monitor transistor provided between the external output terminal and a reference voltage terminal to which a reference voltage is supplied, and through which a current corresponding to the voltage of the external output terminal flows; a first constant current source that is provided in series with the monitor transistor and generates a first voltage according to the difference between the first current and a first constant current; and a cascode circuit that generates a second voltage that amplifies the first voltage and supplies it to the gate of the power transistor.
G05F 1/565 - Régulation de la tension ou de l'intensité là où la variable effectivement régulée par le dispositif de réglage final est du type continu utilisant des dispositifs à semi-conducteurs en série avec la charge comme dispositifs de réglage final sensible à une condition du système ou de sa charge en plus des moyens sensibles aux écarts de la sortie du système, p. ex. courant, tension, facteur de puissance
G05F 1/46 - Régulation de la tension ou de l'intensité là où la variable effectivement régulée par le dispositif de réglage final est du type continu
77.
BATTERY DEVICE, CONTROL METHOD, AND CONTROL PROGRAM
A battery device is disclosed. The battery device includes a lithium-ion battery cell; a strain gauge attached to a surface of the battery cell; a temperature sensor detecting a temperature of the battery cell; and a measurement device calculating an SOC (State of Charge) of the battery cell a strain amount based on the temperature detected by the temperature sensor and a strain amount of the strain gauge changed according to a volume change due to charge and discharge of the battery cell.
H01M 10/0525 - Batteries du type "rocking chair" ou "fauteuil à bascule", p. ex. batteries à insertion ou intercalation de lithium dans les deux électrodesBatteries à l'ion lithium
H01M 10/48 - Accumulateurs combinés à des dispositions pour mesurer, tester ou indiquer l'état des éléments, p. ex. le niveau ou la densité de l'électrolyte
A multi-core system includes a first processor core, a first memory coupled to the first processor core, a first communication IF including a first DMA unit coupled to the first memory, a second processor core, a second memory coupled to the second processor core, a second communication IF including a second DMA unit coupled to the second memory, and an MMU. In a case where page data of a page designated as a read destination by the first processor core is stored in the second memory, the MMU causes the first DMA unit to set a first transmission descriptor based on a page number of the page. The first communication IF transmits a data request including the page number and destination data to the second communication IF according to the first transmission descriptor.
G06F 13/28 - Gestion de demandes d'interconnexion ou de transfert pour l'accès au bus d'entrée/sortie utilisant le transfert par rafale, p. ex. acces direct à la mémoire, vol de cycle
A semiconductor device includes a semiconductor substrate having a first main surface and a second main surface, a plurality of interlayer dielectric films, and a plurality of wiring layers stacked above the first main surface. Each of the plurality of interlayer dielectric films is interposed between two adjacent ones of the plurality of wiring layers and between one of the plurality of wiring layers closest to the first main surface in a first direction and the first main surface. A trench recessed toward the second main surface is formed on the first main surface. The trench includes a straight portion extending along a second direction. The plurality of wiring layers has a first wiring layer farthest from the first main surface in the first direction and a second wiring layer farthest from the first main surface next to the first wiring layer in the first direction.
H01L 23/00 - Détails de dispositifs à semi-conducteurs ou d'autres dispositifs à l'état solide
H01L 21/265 - Bombardement par des radiations ondulatoires ou corpusculaires par des radiations d'énergie élevée produisant une implantation d'ions
H01L 21/768 - Fixation d'interconnexions servant à conduire le courant entre des composants distincts à l'intérieur du dispositif
H01L 23/522 - Dispositions pour conduire le courant électrique à l'intérieur du dispositif pendant son fonctionnement, d'un composant à un autre comprenant des interconnexions externes formées d'une structure multicouche de couches conductrices et isolantes inséparables du corps semi-conducteur sur lequel elles ont été déposées
H01L 29/66 - Types de dispositifs semi-conducteurs
H01L 29/78 - Transistors à effet de champ l'effet de champ étant produit par une porte isolée
80.
DC-DC CONVERTER, CONTROL METHOD AND CONTROL PROGRAM
A DC-DC converter is disclosed. The DC-DC converter includes a first switching element between an external input terminal and an inductor of a smoothing filter, a second switching element provided between the inductor and a reference voltage terminal, a control circuit for on-off controlling the first and second switching elements according to the upper and lower limit values of the output voltage, and a period determination circuit configured to determine the predetermined period based on the voltage corresponding to the upper limit value of the output voltage.
H02M 3/158 - Transformation d'une puissance d'entrée en courant continu en une puissance de sortie en courant continu sans transformation intermédiaire en courant alternatif par convertisseurs statiques utilisant des tubes à décharge avec électrode de commande ou des dispositifs à semi-conducteurs avec électrode de commande utilisant des dispositifs du type triode ou transistor exigeant l'application continue d'un signal de commande utilisant uniquement des dispositifs à semi-conducteurs avec commande automatique de la tension ou du courant de sortie, p. ex. régulateurs à commutation comprenant plusieurs dispositifs à semi-conducteurs comme dispositifs de commande finale pour une charge unique
H02M 1/00 - Détails d'appareils pour transformation
A semiconductor device includes a semiconductor substrate, a buried insulating film, a first conductive film, an insulating layer, a first contact and a second contact. The semiconductor substrate includes a first semiconductor region having a first conductive type and a second semiconductor region having a second conductive type. The buried insulating film surrounds the second semiconductor region in plan view. The first conductive film directly contacts with the first and second semiconductor regions. The first and second contacts overlap with the second semiconductor region in plan view and reach the first conductive film. The first contact is adjacent to the second contact along a first side of the second semiconductor region in plan view. In a direction along the first side, a first distance between the second semiconductor region and the buried insulating film is greater than a second distance between the first contact and the second contact.
H01L 23/485 - Dispositions pour conduire le courant électrique vers le ou hors du corps à l'état solide pendant son fonctionnement, p. ex. fils de connexion ou bornes formées de couches conductrices inséparables du corps semi-conducteur sur lequel elles ont été déposées formées de structures en couches comprenant des couches conductrices et isolantes, p. ex. contacts planaires
A semiconductor device includes a fuse transistor in an active region. In a first direction, the active region is defined by first and second element isolation films. The fuse transistor includes a gate dielectric film, a gate electrode, and semiconductor regions on both sides of the gate electrode in a second direction perpendicular to the first direction. In the first direction, the gate dielectric film has a central portion, a first peripheral portion and a second peripheral portion. The central portion is spaced apart from the first element isolation film and the second element isolation film, the first peripheral portion reaches the first element isolation film, and the second peripheral portion reaches the second element isolation film. The central portion of the gate dielectric film has a first thickness, and each of the first peripheral portion and the second peripheral portion has a second thickness greater than the first thickness.
H01L 23/525 - Dispositions pour conduire le courant électrique à l'intérieur du dispositif pendant son fonctionnement, d'un composant à un autre comprenant des interconnexions externes formées d'une structure multicouche de couches conductrices et isolantes inséparables du corps semi-conducteur sur lequel elles ont été déposées avec des interconnexions modifiables
A semiconductor device includes: a die pad having an upper surface; a semiconductor chip; a plurality of leads; and a plurality of wires. The upper surface includes: a first region in which the semiconductor chip is mounted; a second region surrounding the first region in plan view; and a third region surrounding the second region in plan view. Also, a first metal film is provided in the second region. Further, a second metal film is provided in the third region. Here, in plan view, the semiconductor chip, the first meal film and the second metal film are spaced apart from one another. Also, the plurality of wires includes: a first wire bonded to each of a first electrode of the plurality of electrodes and the first metal film; and a second wire bonded to each of a first lead of the plurality of leads and the second metal film.
A field plate electrode is formed in an inside of a trench via a first insulating film. Another part of the field plate electrode is selectively removed such that part of the field plate electrode is left as a lead portion. After the first insulating film is recessed, a protective film is formed on the first insulating film. A gate insulating film is formed in the inside of the trench, and a second insulating film is formed so as to cover the field plate electrode. A conductive film is formed on the gate insulating, second insulating film and protective films. A gate electrode is formed on the field plate electrode by removing the conductive film located in an outside of the trench. At this time, the conductive film formed on each of the protective film and the second insulating film, which are in contact with the lead portion, is removed.
H01L 29/423 - Electrodes caractérisées par leur forme, leurs dimensions relatives ou leur disposition relative ne transportant pas le courant à redresser, à amplifier ou à commuter
85.
SEMICONDUCTOR DEVICE AND PHYSICAL QUANTITY MEASURING DEVICE
A semiconductor device includes a transmission device and a reception device generating a demodulating signal by receiving the transmission signal via the measuring object from the antenna, and performing a processing to the demodulating signal. The transmission device is configured to start modulation at a first phase. The reception device stores a first phase and a physical quantity corresponding to a phase change amount in advance, estimate modulating signal start timing at which the reception signal switches from a non-modulation period to a modulation period based on a waveform of the demodulating signal; calculate a second phase that is a phase at the modulation start timing, calculates a variation to the second phase based on the stored first phase; and determine a physical quantity corresponding to the variation based on the physical quantity corresponding to a stored phase change amount.
A method for manufacturing a semiconductor device comprising (a) preparing a semiconductor substrate, (b) forming semiconductor elements on the semiconductor substrate, (c) forming an interlayer insulating film on the semiconductor substrate so as to cover the semiconductor elements, (d) forming a first implantation layer in the interlayer insulating film by performing a first ion-implantation, (e) forming a contact hole in the interlayer insulating film, (f) forming a conductive film on the interlayer insulating film so as to fill in the contact hole, (g) removing the conductive film located outside the contact hole by a polishing so that the conductive film inside the contact hole remains. In the (g) step, the polishing is also performed on the interlayer insulating film. And during the polishing, a polishing rate of the first implantation layer is different from a polishing rate of the interlayer insulating film other than the first implantation layer.
09 - Appareils et instruments scientifiques et électriques
42 - Services scientifiques, technologiques et industriels, recherche et conception
Produits et services
(1) Clock generators for computers; oscillators; frequency synthesizers; central processing unit [CPU] clocks; resonators; integrated circuits; electronic integrated circuits; large scale integrated circuits; semiconductors; semiconductor chips; semiconductor chipsets; microprocessors; semi-conductor memories; electronic semi-conductors; circuit boards; chips [integrated circuits]; computer software; computer programs; computer hardware and software for use in implementing the Internet of Things [IoT]; computer hardware; computer software platforms, recorded or downloadable; computers and computer peripherals; DC/DC converters; AC/DC converters; converters, electric; electrical power supplies; components for electrical power supplies; accessories for electrical power supplies; electronic power control machines and apparatus; power control devices; electronic power supplies; electric current control devices; power distribution or control machines and apparatus; rotary converters; phase modifiers; solar batteries; accumulators [batteries]; electrical cells and batteries; current sensors and testers for measuring semiconductor characteristics; electric or magnetic meters and testers; electric wires and cables; telecommunication machines and apparatus; personal digital assistants; vehicle drive training simulators; sports training simulators; laboratory apparatus and instruments; photographic machines and apparatus; cinematographic machines and apparatus; optical machines and apparatus; measuring or testing machines and instruments; magnetic cores; resistance wires; electrodes; game programs for home video game machines; electronic circuits and CD-ROMs recorded with programs for hand-held games with liquid crystal displays; phonograph records; downloadable music files; downloadable image files; recorded video discs and video tapes; electronic publications; exposed cinematographic films; exposed slide films; slide film mounts; apparatus for recording, transmission or reproduction of sound or images; magnetic data carriers and recording discs; data processing apparatus and computers; electronic agendas; amplifiers; antennas; bar code readers; electric cables; fiber optic cables; encoded magnetic cards; cassette players; commutators; compact discs [audio-video]; computer game programs; computer memories; recorded or downloadable computer programs; computers; printers for use with computers; electric contacts; control panels for power distributing; magnetic data media; optical data media; optical discs; blank magnetic discs; disk drives for computers; downloadable electronic publications; integrated circuit cards; inverters [electricity]; lasers, not for medical purposes; magnetic tapes; meters; modems; electric monitoring apparatus; monitors for computer; mice for computers; digital color photocopiers; portable telephones; radio pagers; optical character readers; remote control apparatus; electric resistances; scanners for computer; electric sockets; sound recording apparatus; sound recording magnetic discs and video tapes; sound reproducing apparatus; sound transmitting apparatus; personal stereos; electric switches; switches; telephone apparatus; thermostats; telecommunication transmitters; video cassettes; video game cartridges; video recorders; video telephones; air-gas producers for laboratory use; thermostats for laboratory use; hygrostats for laboratory use; glassware for laboratory experiments; porcelain instruments for laboratory experiments; furnaces for laboratory experiments; laboratory experimental machines and apparatus; models/specimens for laboratory use; tilting pan heads [for laboratory use]; cameras; range finders; photo-developing/printing/enlarging or finishing apparatus; tripods [for cameras]; bellows [photography]; spools; slide projectors; self-timers; power supply equipment for photography flash bulbs; flash lamps; viewfinders; lens hoods; flash guns; shutter releases; optical lenses; exposure meters; projectors [projection apparatus]; transparent sheets [exposed films] for overhead projectors; photograph developing or finishing apparatus; cinematographic cameras; projection screens; editing machines for movie films; lens barrels [for telescopes]; tripods [for telescopes]; periscopes; binoculars; reflectors [for telescopes]; prisms [telescopes]; telescopes; magnifying glasses; metallurgical microscopes; biological microscopes; polarizing microscopes; stereoscopes; microscopes; temperature indicators; gasometers; thermometers; water meters; balances/scales; tape measures; masu [Japanese box-shaped volume measure]; planimeters; rules; standard-unit measuring machines and apparatus; pressure gauges/manometers; level gauges; acoustic meters; tachometers; accelerometers; refractometers; luminoflux meters; photometers; altimeters; hygrometers; illuminometers; vibration gauges; noise meters; logs; speedometers [speed indicators]; calorimeters; viscosimeters; densitometers/concentration meters; gravimeters/aerometers; densimeters [density meters]; dynamometers; flowmeters; derived-unit measuring machines and apparatus; angle gauges; angle dividing apparatus [measuring instruments]; spherometers; inclinometers; interferometers; straightness testers; projectors; graduation checkers [calibration checkers]; length gauges; screw-thread measuring machines and instruments; comparators; surface roughness testers; flatness testers; precision measuring machines and instruments; automatic pressure controllers; automatic liquid-flow controllers; automatic fluid-composition controllers; automatic liquid-level controllers; automatic temperature controllers; automatic combustion controllers; automatic vacuum controllers; automatic calorie controllers; programmable logic controllers; automatic adjusting/regulating machines and instruments; metal compression testers; metal hardness testers; metal strength testers; rubber testing machines; concrete testing machines; cement testing machines; textile testing machines; plastic testing machines; lumber testing machines; material testing machines and instruments; alidades; meteorological instruments; base plates for measuring instruments; distance measuring machines or apparatus [range finders]; clinometers; magnetic compasses; compass needles; gyro compasses; gyromagnetic compasses; analysis instruments for photogrammetric purposes; levels [spirit levels]; precision theodolites; measuring rods; surveying chains; electronic target location apparatus; transits for surveying; levelling rods for surveying; sextants; surveying machines and instruments; meridian transits; astronomical spectroscopes; zenith telescopes; astrometric measuring apparatus and instruments; electronic charts for identifying hiding-power of paint; rust-formation testing pieces; relays; circuit breakers; power controllers; current rectifiers; connectors; circuit closers; capacitors; resistors; distributing boxes; distribution boards [electricity]; fuses; lightning arresters; transformers; induction voltage regulators; reactors [electricity]; phase meters; oscillographs; circuit testers; antenna measuring apparatus; detectors; magnetic measuring apparatus; frequency meters; vacuum tube characteristic measuring apparatus; watt hour meters; ammeters; wattmeters; oscillators; electrical power testers; interphones; automatic telephone exchange apparatus; manual telephone exchange apparatus; telephone sets; teletypewriters; automatic telegraph apparatus; phototelegraphy apparatus; manual telegraph apparatus; facsimile machines; audio frequency transmission apparatus; cable-type carrier-frequency apparatus; power-line-type frequency-carrier apparatus; open-wire-type frequency-carrier apparatus; carrier-frequency repeaters; transmission machines and apparatus for telecommunication; television receivers; television transmitters; radio receivers [radios]; radio transmitters; broadcasting machines and apparatus; portable radio communication apparatus; aeronautical radio communication apparatus; multichannel radio communication apparatus for fixed stations; monochannel radio communication apparatus for fixed stations; radio communication apparatus for vehicles; marine radio communication apparatus; radio communication machines and apparatus; navigation apparatus for vehicles; beacon apparatus; direction finders; radar apparatus; LORAN apparatus; radio machines and apparatus; remote control telemetering apparatus; loudspeakers/megaphones; compact disc players; juke boxes; tape recorders; electric phonographs; record players; audio frequency devices and apparatus; video disc players; video frequency devices and apparatus; cabinets for loudspeakers; coils, electric; magnetic tape erasers; magnetic tape cleaners; magnetic head erasers; magnetic head cleaners; speakers; stands and racks for telecommunication machines and apparatus; dials [for photographic transparencies]; fuses for communication apparatus; tapes for tape recorders; change-over switches; distribution boards; pickups; video tapes; indicator lights for telecommunication apparatus; electrical phonomotors; headphones; protectors for telecommunication apparatus; microphones; record cleaners [cleaning apparatus for phonograph records]; blank record discs; cleaning apparatus for phonograph records; parts and accessories for telecommunication machines and apparatus; geiger counters; cyclotrons; X-ray apparatus, not for medical use; betatrons, not for medical use; magnetic surveying machines; magnetic object detectors; shielding cases for magnetic discs; seismic wave surveying machines; hydrophone machines and apparatus; ultrasonic depth sounders; ultrasonic flaw detectors; ultrasonic sensors; electrostatic copying machines; remote control apparatus for opening and closing doors; electronic microscopes; desk-top computers; word processors; X-rays tubes, not for medical use; tubes for photographic instruments; vacuum tubes; rectifier tubes; cathode ray tubes; discharge tubes; electron tubes; thermistors; diodes; transistors; electronic circuits and CD-ROMs recorded with program for handheld liquid crystal display game; pre-recorded video discs and tapes; semi-conductor devices; semi-conductor integrated circuits including CPU; electronic circuits; magnetic drums, magnetic discs, magnetic tapes, CD-ROMs, electronic circuits and other storage mediums recorded with a program for developing and designing of semi-conductor devices, integrated circuits including CPU, electronic circuits and other electronic machines; microcontrollers; microcomputers; programs for microcomputers; circuits for testing/evaluating of microcomputers, microcontrollers, microprocessors and semi-conductor integrated circuits; semi-conductor integrated circuits; semi-conductor commutators; downloadable electronic publications for semi-conductors; silicon wafers for semi-conductors; DVD players; DVD recorders and digital video cameras; digital still cameras; video cameras; liquid crystal displays; plasma display television sets; light emitting diodes [LED]; printed circuit boards; notebook computers; handheld computers; personal digital assistants [PDA]; data processing apparatus; electrostatic copying machines; printers; cathode ray tube displays; computer peripheral equipment; compact discs [CD]; digital versatile disks [DVD]; encoded magnetic, optical and integrated circuit cards; magnetic cards; video projectors; semi-conductor testing apparatus. (1) Design of electronic circuit, semiconductor devices, integrated circuits and large scale integrated circuits; design and testing of semiconductor for others; designing of machines, apparatus, instruments [including their parts] or systems composed of such machines, apparatus and instruments; design of semiconductor devices; design of semiconductor chips; design of integrated circuits; design and updating of computer software; provision of technological information in relation to semiconductor including integrated circuits; design of computer-simulated models; computer programming; technological advice relating to computers, automobiles and industrial machines; testing or research in relation to electronic circuit, semiconductor devices, integrated circuits and large scale integrated circuits; design, development, testing and inspection of power management integrated circuits (PMICs); testing and research services relating to machines, apparatus and instruments; software as a service [SaaS]; platform as a service [PaaS]; leasing of a database server to third parties; rental of computers; providing computer programs on data networks; rental of laboratory apparatus and instruments; providing meteorological information; architectural design; surveying; geological surveys; testing, inspection and research services in the fields of pharmaceuticals, cosmetics and foodstuffs; research on building construction or city planning; testing and research services in the field of preventing pollution; testing and research services in the field of electricity; testing and research services in the field of civil engineering; testing, inspection and research services in the fields of agriculture, livestock breeding and fisheries; rental of measuring apparatus; rental of telescopes; rental of technical drawing instruments; design and development of computer hardware and software; authenticating works of art; calibration [measuring]; computer software design; computer system design; computer systems analysis; consultancy in the field of computer hardware; consultation in environment protection; conversion of data or documents from physical to electronic media; creating and maintaining web sites for others; data conversion of computer programs and data, not physical conversion; design of interior decor; dress designing; duplication of computer programs; engineering; graphic arts designing; hosting computer sites [web sites]; industrial design; installation of computer software; maintenance of computer software; material testing; packaging design; physics [research]; technical project studies; quality control; recovery of computer data; rental of computer software; research and development for others; updating of computer software; styling [industrial design]; technical research; textile testing; underwater exploration; vehicle roadworthiness testing; consultancy and advice in the field of design of semi-conductor devices; testing, checking and research of semi-conductor devices; providing information about design of semi-conductor devices/consultancy and advice in the field of design of semi-conductor devices, testing, checking and research in the field of semi-conductor devices; guidance and advice in the field of design of semi-conductor chips; testing, checking and research in the field of semi-conductor chips/consultancy and advice in the field of design of semi-conductor chips, testing, checking and research in the field of semi-conductor chips; consultancy and advice in the field of design of integrated circuits; testing, checking and research in the field of integrated circuits; providing information about design of integrated circuits/consultancy and advice in the field of design of integrated circuits, testing, checking and research in the field of integrated circuits; design of microcomputers; consultancy and advice in the field of design of microcomputers; testing, checking and research in the field of microcomputers; providing information about design of microcomputers/consultancy and advice in the field of design of microcomputers, testing, checking and research in the field of microcomputer; design of IC cards; consultancy and advice in the field of design of IC cards; testing, checking and research in the field of IC cards; providing information about design of IC cards/consultancy and advice in the field of design of IC cards, testing, checking and research in the field of IC cards; design of semi-conductor memory; consultancy and advice in the field of design of semi-conductor memory; testing, checking and research in the field of semi-conductor memory; providing information about design of semi-conductor memory/consultancy and advice in the field of design of semi-conductor memory, testing, checking and research in the field of semi-conductor memory; design of circuit boards; consultancy and advice in the field of design of circuit boards; testing, checking and research in the field of circuit boards; providing information about design of circuit boards/consultancy and advice in the field of design of circuit boards, testing, checking and research in the field of circuit boards; design of semi-conductor manufacturing apparatus; consultancy and advice in the field of design of semi-conductor manufacturing apparatus; testing, checking and research in the field of semi-conductor manufacturing apparatus; providing information about design of semi-conductor manufacturing apparatus/consultancy and advice in the field of design of semi-conductor manufacturing apparatus, testing, checking and research in the field of semi-conductor manufacturing apparatus; design of semi-conductor testing apparatus; consultancy and advice in the field of design of semi-conductor testing apparatus; testing, checking and research in the field of semi-conductor testing apparatus; providing information about design of semi-conductor testing apparatus/consultancy and advice in the field of design of semi-conductor testing apparatus, testing, checking and research in the field of semi-conductor testing apparatus; design of semi-conductor checking apparatus; consultancy and advice in the field of design of semi-conductor checking apparatus; testing, checking and research in the field of semi-conductor checking apparatus; providing information about design of semi-conductor checking apparatus/consultancy and advice in the field of design of semi-conductor checking apparatus, testing, checking and research in the field of semi-conductor checking apparatus; information relating to the use of electronic calculators; information relating to the use of microcomputers; provision of technological information relating to the use of semi-conductor manufacturing apparatus; information relating to the use of semi-conductor testing apparatus; information relating to the use of semi-conductor checking apparatus; computer programming and maintenance of computer software and CAD software; rental of computer software and CAD software; research, developing and designing of semi-conductor devices, integrated circuits, CPUs and electronic circuits for others; surveys, advice, consultation, and providing information in the field of research, developing, and designing for others of semi-conductors and devices, integrated circuits, CPUs and electronic circuits; research, developing, designing, programming and maintenance of computer software for others; surveys, advice, consultation, and providing information in the field of research, developing, designing, programming and maintenance of computer software; preparation of technical reports for others in the field of research, developing, designing, programming and maintenance of semi-conductor devices, integrated circuits, CPUs and electronic circuits; technical writing for others in the field of computer software; providing information in the field of research, developing, and designing for others of semi-conductor devices, integrated circuits, CPUs and electronic circuits by means of a global computer network; providing temporary use of on-line non-downloadable applications software (for use in the field of semi-conductor production, for use in electronic circuit design); evaluation of technologies for manufacturing semi-conductors for others; providing technology information for research, developing and designing of semi-conductor devices, integrated circuits, CPUs and electronic circuits; mechanical testing and research; rental of semi-conductor testing apparatus; providing information about rental of semi-conductor testing apparatus; rental of semi-conductor checking apparatus; providing information about rental of semi-conductor checking apparatus; inspection of semi-conductor manufacturing apparatus, semi-conductor testing apparatus and semi-conductor checking apparatus; providing information about inspection of semi-conductor manufacturing apparatus, semi-conductor testing apparatus and semi-conductor checking apparatus.
A semiconductor device includes first and second isolators, a first transmitting circuit that transmits a transmission signal via the first isolator, a first receiving circuit that receives a received signal corresponding to the transmission signal via the first isolator, an output driver that outputs a drive signal for driving a power device based on the received signal, a timer that inputs first and second signals having first and second information associated with the power device, respectively, and outputs a third signal from the first and second information, a second transmitting circuit that transmits the third signal via the second isolator and a second receiving circuit that receives a signal corresponding to the third signal via the second isolator.
H03K 17/56 - Commutation ou ouverture de porte électronique, c.-à-d. par d'autres moyens que la fermeture et l'ouverture de contacts caractérisée par l'utilisation de composants spécifiés par l'utilisation, comme éléments actifs, de dispositifs à semi-conducteurs
B60R 16/03 - Circuits électriques ou circuits de fluides spécialement adaptés aux véhicules et non prévus ailleursAgencement des éléments des circuits électriques ou des circuits de fluides spécialement adapté aux véhicules et non prévu ailleurs électriques pour l'alimentation des sous-systèmes du véhicule en énergie électrique
H02M 1/08 - Circuits spécialement adaptés à la production d'une tension de commande pour les dispositifs à semi-conducteurs incorporés dans des convertisseurs statiques
H03K 5/156 - Dispositions dans lesquelles un train d'impulsions est transformé en un train ayant une caractéristique désirée
89.
SEMICONDUCTOR DEVICE, CONTROL METHOD FOR SEMICONDUCTOR DEVICE AND CONTROL PROGRAM
A failure analysis device is for analyzing a failure of the semiconductor device equipped with a logic circuit and a memory circuit. It has a storage device and a processor. The storage device stores fail bit data obtained by testing the memory circuit and failure diagnosis data obtained by failure diagnosis for test results of the logic circuit. The processor extracts a fail I/O value from the fail bit data, extracts the data of the memory connection port which is the connection port to the memory circuit from among the estimated failure parts included in the failure diagnosis data, and determines match/not-match between the fail I/O value and the port ID value included in the data of the memory connection port.
An overvoltage protection circuit is provided. The overvoltage protection circuit includes: a current output circuit including a first transistor arranged between a power supply and a CC terminal and a second transistor arranged between the first transistor and the CC terminal, the current output circuit outputting the current to the first transistor to be driven such that a current flows from the power supply; and a gate input circuit controlling a voltage of a gate and a voltage of a back gate of the second transistor, the gate input circuit controls the voltage of the gate and the voltage of the back gate of the second transistor in response to a voltage applied to the CC terminal, and the current output circuit protects the first transistor from the voltage applied to the CC terminal under control of the second transistor.
H03K 17/0814 - Modifications pour protéger le circuit de commutation contre la surintensité ou la surtension sans réaction du circuit de sortie vers le circuit de commande par des dispositions prises dans le circuit de sortie
H03K 17/687 - Commutation ou ouverture de porte électronique, c.-à-d. par d'autres moyens que la fermeture et l'ouverture de contacts caractérisée par l'utilisation de composants spécifiés par l'utilisation, comme éléments actifs, de dispositifs à semi-conducteurs les dispositifs étant des transistors à effet de champ
09 - Appareils et instruments scientifiques et électriques
42 - Services scientifiques, technologiques et industriels, recherche et conception
Produits et services
Integrated circuits; electronic integrated circuits; large scale integrated circuits; semi-conductors; semiconductor chips; semiconductor chipsets; microprocessors; semi- conductor memories; electronic semi-conductors; circuit boards; Downloadable computer software for performing computer maintenance to enable transmission, reception, recording and storage of data transmitted over telephones, wireless communication, radio, television and telephone transmission and reception; Downloadable computer software for designing integrated circuits; Downloadable computer software for use in the manufacture of semiconductors, namely, for use in processing, controlling, and yield enhancement of semiconductors; Recorded computer software for performing computer to enable transmission, reception, recording and storage of data transmitted over telephones, wireless communication, radio, television and telephone transmission and reception; Recorded computer software for designing integrated circuits; Recorded computer software for use in the manufacture of semiconductors, namely, for use in processing, controlling, and yield enhancement of semiconductors; Downloadable computer programs, for performing computer maintenance to enable transmission, reception, recording and storage of data transmitted over telephones, wireless communication, radio, television and telephone transmission and reception; Downloadable computer programs for designing integrated circuits; Downloadable computer programs for use in the manufacture of semiconductors, namely, for use in processing, controlling, and yield enhancement of semiconductors; Recorded computer programs for performing computer maintenance to enable transmission, reception, recording and storage of data transmitted over telephones, wireless communication, radio, television and telephone transmission and reception; Recorded computer programs for designing integrated circuits; Recorded computer programs for use in the manufacture of semiconductors, namely, for use in processing, controlling, and yield enhancement of semiconductors; computer hardware modules for use in electronic devices using the Internet of Things (IoT) and downloadable computer software for implementing Internet of Things (IoT); computer hardware; Recorded computer software platforms for performing computer maintenance to enable transmission, reception, recording and storage of data transmitted over telephones, wireless communication, radio, television and telephone transmission and reception; Recorded computer software platforms for designing integrated circuits; Recorded computer software platforms for use in the manufacture of semiconductors, namely, for use in processing, controlling, and yield enhancement of semiconductors; Downloadable computer software platforms for performing computer maintenance to enable transmission, reception, recording and storage of data transmitted over telephones, wireless communication, radio, television and telephone transmission and reception; Downloadable computer software platforms for designing integrated circuits; Downloadable computer software platforms for use in the manufacture of semiconductors, namely, for use in processing, controlling, and yield enhancement of semiconductors; DC/DC converters; AC/DC converters; converters, electric; electrical power supplies; electronic power control machines and apparatus for distribution and regulation of electrical power; power control device; electronic power supplies; electric current control devices; electric power distribution or control machines and apparatus; rotary converters; phase modifiers; solar batteries; accumulators being batteries; electrical cells and batteries; current sensors and testers for measuring semiconductor characteristics; electric or electromagnetic meters and testers; electric wires and cables; telecommunication machines and apparatus, namely, routers, modems, portable telephones; personal digital assistants; vehicle drive training simulators; electronic sports training simulators; laboratory apparatus and instruments, namely, air-gas producers for laboratory use, thermostats for laboratory use, hygrostats for laboratory use, glassware for laboratory experiments, porcelain instruments for laboratory experiments, furnaces for laboratory experiments; photographic machines and apparatus, namely, cameras, camera lenses, exposure meters, filters, projectors, flashbulbs; cinematographic machines and apparatus; optical machines and apparatus, namely, optical fiber cables, optical disk readers, optical filters, optical sensors, optical receivers, periscopes, binoculars, reflectors, prisms, telescopes, magnifying glasses, metallurgical microscopes, biological microscopes, polarizing microscopes, stereoscopes, microscopes; measuring or testing machines and instruments for measuring or testing temperature, gas, thermal energy, water, pressure, acoustics, acceleration, refraction, luminous flux, luminosity, altitude, humidity, light, vibration, noise, speed, heat, viscosity, concentration, gravity, density, flow rate, metal strength, cement, radiation, rubber, textile, plastic, lumber; magnetic cores; resistance wires; electrodes; downloadable video game programs for home video game machines; recorded video game programs for home video game machines; electronic circuits; CD-ROMs recorded with video game programs for hand-held games with liquid crystal displays; phonograph records featuring music; downloadable music files; downloadable image files containing semiconductors and circuits; pre-recorded video discs and video tapes featuring semiconductors and circuits; Downloadable electronic publications in the nature of instruction manuals in the field of semiconductors and circuits; electronic publications, namely, instruction manuals featuring semiconductors and circuits recorded on computer media; exposed cinematographic films; exposed slide films; slide film mounts; Frequency synthesizers Oscillators; Resonators; crystal clock oscillators Design of electronic circuit, semiconductor devices, integrated circuits and large scale integrated circuits; design and testing of semiconductor for others; designing of machines, apparatus, instruments and their parts or systems composed of such machines, apparatus and instruments; design of semiconductor devices; design of semiconductor chips; design of integrated circuits; design and updating of computer software; provision of technical information in relation to semiconductors, namely, integrated circuits; design of computer- simulated models; computer programming; technological advice relating to repair of computer software and operation of computers; technological advice relating to automobiles transmission diagnostic services; technological advice relating to the design of industrial machines; testing or research of electronic circuits, semiconductor devices, integrated circuits and large scale integrated circuits; design, development, testing and inspection of power management integrated circuits (PMICs); testing the functionality of machines, apparatus and instruments, and research on machines, apparatus and instruments; software as a service (SAAS) services featuring software for managing and accessing technical and non-technical information regarding the design and development of semiconductors, namely, the design and development of electronic discrete and integrated circuits; consulting services in the fields of selection, implementation and use of computer hardware and software systems for others; platform as a service (PAAS) services featuring software for managing and accessing technical and non-technical information regarding the design and development of semiconductors, namely, the design and development of electronic discrete and integrated circuits; Rental of a database server to third parties; rental of computers; providing temporary use of non-downloadable computer programs for troubleshooting computer software problems over data networks; rental of laboratory apparatus and instruments; providing meteorological information; architectural design; surveying; geological surveyings; testing, inspection and research services in the fields of pharmaceuticals, cosmetics and foodstuffs; research in the field of building construction and city planning; testing and research services in the field of preventing pollution; testing and research services in the field of electricity; testing and research services in the field of civil engineering; testing, inspection and research services in the fields of agriculture, livestock breeding and fisheries; rental of measuring apparatus; rental of telescopes; rental of technical drawing instruments
92.
SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING THE SAME
A low withstand voltage MISFET and a high withstand voltage MISFET are formed on an SOI substrate. An ON operation and an OFF operation of the low withstand voltage MISFET are controlled by a first gate potential to be supplied to a first gate electrode and a back gate potential to be supplied to a first well region. An ON operation and an OFF operation of the high withstand voltage MISFET are controlled by a second gate potential to be supplied to a second gate electrode in a state where a second well region is electrically floating. An absolute value of a second power supply potential to be supplied to a second impurity region is larger than an absolute value of a first power supply potential to be supplied to a first impurity region.
H01L 27/12 - Dispositifs consistant en une pluralité de composants semi-conducteurs ou d'autres composants à l'état solide formés dans ou sur un substrat commun comprenant des éléments de circuit passif intégrés avec au moins une barrière de potentiel ou une barrière de surface le substrat étant autre qu'un corps semi-conducteur, p.ex. un corps isolant
H01L 21/265 - Bombardement par des radiations ondulatoires ou corpusculaires par des radiations d'énergie élevée produisant une implantation d'ions
H01L 21/84 - Fabrication ou traitement de dispositifs consistant en une pluralité de composants à l'état solide ou de circuits intégrés formés dans ou sur un substrat commun avec une division ultérieure du substrat en plusieurs dispositifs individuels pour produire des dispositifs, p.ex. des circuits intégrés, consistant chacun en une pluralité de composants le substrat étant autre chose qu'un corps semi-conducteur, p.ex. étant un corps isolant
H01L 29/423 - Electrodes caractérisées par leur forme, leurs dimensions relatives ou leur disposition relative ne transportant pas le courant à redresser, à amplifier ou à commuter
H01L 29/78 - Transistors à effet de champ l'effet de champ étant produit par une porte isolée
A semiconductor substrate exposed from an oxidation-resistant mask layer is thermally oxidized to form a field oxidation film. The mask layer has multiple mask parts with a first width and multiple mask parts with a second width smaller than the first width. In the thermal oxidation process, an oxidation film is formed integrally with the field oxidation film under the mask part, and an oxidation film is formed integrally with the field oxidation film under the mask part. After removing the mask layer, plurality of p-type semiconductor regions is formed by ion-implantation into the semiconductor substrate using the field oxidation film as a mask. The plurality of p-type semiconductor regions includes a first semiconductor region formed under the oxidation film and a second semiconductor region formed under the oxidation film, and the depth of the second semiconductor region is shallower than the depth of the first semiconductor region.
H01L 21/225 - Diffusion des impuretés, p. ex. des matériaux de dopage, des matériaux pour électrodes, à l'intérieur ou hors du corps semi-conducteur, ou entre les régions semi-conductricesRedistribution des impuretés, p. ex. sans introduction ou sans élimination de matériau dopant supplémentaire en utilisant la diffusion dans ou hors d'un solide, à partir d'une ou en phase solide, p. ex. une couche d'oxyde dopée
H01L 29/66 - Types de dispositifs semi-conducteurs
94.
SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREOF
A drift layer is formed over a semiconductor substrate which is an SiC substrate. The drift layer includes first to third n-type semiconductor layers and a p-type impurity region. Herein, an impurity concentration of the second n-type semiconductor layer is higher than an impurity concentration of the first n-type semiconductor layer and an impurity concentration of the third n-type semiconductor layer. Also, in plan view, the second semiconductor layer located between the p-type impurity regions adjacent to each other overlaps with at least a part of a gate electrode formed in a trench.
H01L 29/78 - Transistors à effet de champ l'effet de champ étant produit par une porte isolée
H01L 21/02 - Fabrication ou traitement des dispositifs à semi-conducteurs ou de leurs parties constitutives
H01L 21/027 - Fabrication de masques sur des corps semi-conducteurs pour traitement photolithographique ultérieur, non prévue dans le groupe ou
H01L 21/04 - Fabrication ou traitement des dispositifs à semi-conducteurs ou de leurs parties constitutives les dispositifs ayant des barrières de potentiel, p. ex. une jonction PN, une région d'appauvrissement ou une région de concentration de porteurs de charges
H01L 29/06 - Corps semi-conducteurs caractérisés par les formes, les dimensions relatives, ou les dispositions des régions semi-conductrices
H01L 29/08 - Corps semi-conducteurs caractérisés par les formes, les dimensions relatives, ou les dispositions des régions semi-conductrices avec des régions semi-conductrices connectées à une électrode transportant le courant à redresser, amplifier ou commuter, cette électrode faisant partie d'un dispositif à semi-conducteur qui comporte trois électrodes ou plus
H01L 29/10 - Corps semi-conducteurs caractérisés par les formes, les dimensions relatives, ou les dispositions des régions semi-conductrices avec des régions semi-conductrices connectées à une électrode ne transportant pas le courant à redresser, amplifier ou commuter, cette électrode faisant partie d'un dispositif à semi-conducteur qui comporte trois électrodes ou plus
H01L 29/16 - Corps semi-conducteurs caractérisés par les matériaux dont ils sont constitués comprenant, mis à part les matériaux de dopage ou autres impuretés, seulement des éléments du groupe IV de la classification périodique, sous forme non combinée
H01L 29/36 - Corps semi-conducteurs caractérisés par la concentration ou la distribution des impuretés
H01L 29/423 - Electrodes caractérisées par leur forme, leurs dimensions relatives ou leur disposition relative ne transportant pas le courant à redresser, à amplifier ou à commuter
Occurrence of short-channel characteristics and parasitic capacitance of a MOSFET on a SOI substrate is prevented. A sidewall having a stacked structure obtained by sequentially stacking a silicon oxide film and a nitride film is formed on a side wall of a gate electrode on the SOI substrate. Subsequently, after an epitaxial layer is formed beside the gate electrode, and then, the nitride film is removed. Then, an impurity is implanted into an upper surface of the semiconductor substrate with using the gate electrode and the epitaxial layer as a mask, so that a halo region is formed in only a region of the upper surface of the semiconductor substrate which is right below a vicinity of both ends of the gate electrode.
H01L 29/08 - Corps semi-conducteurs caractérisés par les formes, les dimensions relatives, ou les dispositions des régions semi-conductrices avec des régions semi-conductrices connectées à une électrode transportant le courant à redresser, amplifier ou commuter, cette électrode faisant partie d'un dispositif à semi-conducteur qui comporte trois électrodes ou plus
H01L 21/265 - Bombardement par des radiations ondulatoires ou corpusculaires par des radiations d'énergie élevée produisant une implantation d'ions
H01L 21/74 - Réalisation de régions profondes à haute concentration en impuretés, p. ex. couches collectrices profondes, connexions internes
H01L 21/768 - Fixation d'interconnexions servant à conduire le courant entre des composants distincts à l'intérieur du dispositif
H01L 21/82 - Fabrication ou traitement de dispositifs consistant en une pluralité de composants à l'état solide ou de circuits intégrés formés dans ou sur un substrat commun avec une division ultérieure du substrat en plusieurs dispositifs individuels pour produire des dispositifs, p.ex. des circuits intégrés, consistant chacun en une pluralité de composants
H01L 21/8238 - Transistors à effet de champ complémentaires, p.ex. CMOS
H01L 21/84 - Fabrication ou traitement de dispositifs consistant en une pluralité de composants à l'état solide ou de circuits intégrés formés dans ou sur un substrat commun avec une division ultérieure du substrat en plusieurs dispositifs individuels pour produire des dispositifs, p.ex. des circuits intégrés, consistant chacun en une pluralité de composants le substrat étant autre chose qu'un corps semi-conducteur, p.ex. étant un corps isolant
H01L 27/12 - Dispositifs consistant en une pluralité de composants semi-conducteurs ou d'autres composants à l'état solide formés dans ou sur un substrat commun comprenant des éléments de circuit passif intégrés avec au moins une barrière de potentiel ou une barrière de surface le substrat étant autre qu'un corps semi-conducteur, p.ex. un corps isolant
H01L 29/06 - Corps semi-conducteurs caractérisés par les formes, les dimensions relatives, ou les dispositions des régions semi-conductrices
H01L 29/10 - Corps semi-conducteurs caractérisés par les formes, les dimensions relatives, ou les dispositions des régions semi-conductrices avec des régions semi-conductrices connectées à une électrode ne transportant pas le courant à redresser, amplifier ou commuter, cette électrode faisant partie d'un dispositif à semi-conducteur qui comporte trois électrodes ou plus
H01L 29/417 - Electrodes caractérisées par leur forme, leurs dimensions relatives ou leur disposition relative transportant le courant à redresser, à amplifier ou à commuter
H01L 29/423 - Electrodes caractérisées par leur forme, leurs dimensions relatives ou leur disposition relative ne transportant pas le courant à redresser, à amplifier ou à commuter
H01L 29/66 - Types de dispositifs semi-conducteurs
H01L 29/78 - Transistors à effet de champ l'effet de champ étant produit par une porte isolée
Two resistance elements are each formed so as to overlap a portion of each of a gate pad and a gate wiring in a plan view, and are electrically connected to the gate pad and the gate wiring. A p-type well region is formed so as to overlap a portion of each of the two insulating films, the two resistance elements, the gate pad, the gate wiring, and the emitter electrode in the plan view. The emitter electrode includes a convex portion that protrudes toward a gate pad side in a Y direction in the plan view. The convex portion is located between the two resistance elements in the plan view. The convex portion and the well region are electrically connected via a hole formed in an interlayer insulating film.
H01L 29/739 - Dispositifs du type transistor, c.à d. susceptibles de répondre en continu aux signaux de commande appliqués commandés par effet de champ
H01L 29/06 - Corps semi-conducteurs caractérisés par les formes, les dimensions relatives, ou les dispositions des régions semi-conductrices
H01L 29/66 - Types de dispositifs semi-conducteurs
Reliability of a semiconductor device is improved. A field plate electrode is formed on an insulating film inside a trench. Next, by an isotropic etching process to the insulating film, the insulating film is thinned, and an upper portion of the field plate electrode is exposed from the insulating film. Next, an isotropic etching process (chemical dry etching process) is performed to the field plate electrode exposed from the insulating film. In this manner, a corner of the upper portion of the field plate electrode is chamfered or rounded, and therefore, a concentration of electric field at the upper portion of the field plate electrode can be moderated.
H01L 29/66 - Types de dispositifs semi-conducteurs
H01L 21/3213 - Gravure physique ou chimique des couches, p. ex. pour produire une couche avec une configuration donnée à partir d'une couche étendue déposée au préalable
The circuit area of the semiconductor device in which the transmission period and the reception period are alternately repeated is reduced. The semiconductor device includes a transmission circuit and a receiving circuit. The receiving circuit includes a gain control circuit that samples the input signal to adjust the gain of the receiving circuit during the reception period and adjusts the gain based on the sampling result during the transmission period.
A semiconductor device according to one includes: an initial value setting unit configured to provide an initial value of a register that holds a cumulative value to be a result of a product-sum operation in a product-sum operation circuit; and an initial value canceling circuit configured to cancel the initial value contained in the cumulative value held by the register and output a final output value, and the initial value setting unit sets a positive or negative value other than zero as the initial value.
G06F 7/544 - Méthodes ou dispositions pour effectuer des calculs en utilisant exclusivement une représentation numérique codée, p. ex. en utilisant une représentation binaire, ternaire, décimale utilisant des dispositifs n'établissant pas de contact, p. ex. tube, dispositif à l'état solideMéthodes ou dispositions pour effectuer des calculs en utilisant exclusivement une représentation numérique codée, p. ex. en utilisant une représentation binaire, ternaire, décimale utilisant des dispositifs non spécifiés pour l'évaluation de fonctions par calcul
G06F 1/3234 - Économie d’énergie caractérisée par l'action entreprise
G06F 7/509 - AdditionSoustraction en mode parallèle binaire, c.-à-d. ayant un circuit de maniement de chiffre différent pour chaque position pour opérandes multiples, p. ex. intégrateurs numériques
G06N 3/063 - Réalisation physique, c.-à-d. mise en œuvre matérielle de réseaux neuronaux, de neurones ou de parties de neurone utilisant des moyens électroniques
100.
SEMICONDUCTOR DEVICE, METHODS OF MANUFACTURING SEMICONDUCTOR DEVICE, AND SEMICONDUCTOR MODULE
According to this present application, a reliability of a semiconductor device can be improved. The semiconductor device has a first region where a MOSFET is formed, and a second region where a temperature sensor transistor is formed. A body region is formed in a semiconductor substrate of the first region, and a base region is formed in the semiconductor substrate of the second region. A source region is formed in the body region and an emitter region is formed in the base region. A first column region is formed in the semiconductor substrate located below the body region, and a second column region is formed in the semiconductor substrate located below the base region.
H01L 29/78 - Transistors à effet de champ l'effet de champ étant produit par une porte isolée
G01K 7/01 - Mesure de la température basée sur l'utilisation d'éléments électriques ou magnétiques directement sensibles à la chaleur utilisant des éléments semi-conducteurs à jonctions PN
H01L 23/00 - Détails de dispositifs à semi-conducteurs ou d'autres dispositifs à l'état solide
H01L 29/06 - Corps semi-conducteurs caractérisés par les formes, les dimensions relatives, ou les dispositions des régions semi-conductrices
H01L 29/66 - Types de dispositifs semi-conducteurs
