The purpose of the present invention is to provide a technology that makes it possible to easily perform individual identification on a reference sample that is used to calibrate a result of measuring the size of particles in a sample by using light. A reference sample according to the present invention is provided with a transparent flat plate having a window. The transparent flat plate is provided with a boundary surface having a reflectance that is substantially equal to the reflectance of a sample. One surface of the transparent flat plate has formed thereon a shape pattern that represents ID information for identifying the reference sample (see fig. 12).
G01N 15/00 - Recherche de caractéristiques de particulesRecherche de la perméabilité, du volume des pores ou de l'aire superficielle effective de matériaux poreux
G01N 15/0227 - Recherche de la dimension ou de la distribution des dimensions des particules par des moyens optiques utilisant l’imagerieRecherche de la dimension ou de la distribution des dimensions des particules par des moyens optiques utilisant l’holographie
2.
CHARGED PARTICLE BEAM DEVICE AND METHOD FOR CONTROLLING CHARGED PARTICLE BEAM DEVICE
This charged particle beam device comprises: a charged particle beam irradiation optical system; a sample stage; a driving mechanism that drives the sample stage; and a computer that sets a cross-section of the sample in a processing area of the sample and controls the charged particle beam irradiation optical system and the driving mechanism when slicing the processing area. The computer sets an angle that is defined by the surface to be irradiated of the sample and the irradiation axis of the charged particle beam by controlling the driving mechanism on the basis of the angle that is defined by the surface to be irradiated and the irradiation axis, and controls the charged particle beam irradiation optical system and the driving mechanism so that areas that are to be irradiated by a plurality of charged particle beams that are irradiated in prescribed directions of the processing area of the sample when slicing the processing area are set, and the processing area is sliced by being scanned by the charged particle beams while the angle is maintained.
H01J 37/317 - Tubes à faisceau électronique ou ionique destinés aux traitements localisés d'objets pour modifier les propriétés des objets ou pour leur appliquer des revêtements en couche mince, p. ex. implantation d'ions
This automated analysis device is provided with a plurality of analysis units for analyzing a specimen, a buffer portion which holds a plurality of specimen racks on which are placed specimen containers holding the specimen, a sampler portion which conveys the specimen racks held in the buffer portion to the analysis units, and a control portion which, when performing a process to deliver the specimen racks to the plurality of analysis units, outputs synchronization signals to all the plurality of analysis units, wherein the analysis unit performs a delivery process starting from the synchronization signal, and the analysis unit performs a delivery process starting from the synchronization signal.
G01N 35/02 - Analyse automatique non limitée à des procédés ou à des matériaux spécifiés dans un seul des groupes Manipulation de matériaux à cet effet en utilisant une série de récipients à échantillons déplacés par un transporteur passant devant un ou plusieurs postes de traitement ou d'analyse
G01N 35/00 - Analyse automatique non limitée à des procédés ou à des matériaux spécifiés dans un seul des groupes Manipulation de matériaux à cet effet
4.
CHARGED PARTICLE BEAM DEVICE AND METHOD FOR CONTROLLING CHARGED PARTICLE BEAM DEVICE
This charged particle beam device, which is for processing a sample, comprises: a charged particle beam–emitting optical system that emits a charged particle beam; a sample stage that holds a sample; a drive mechanism that drives the sample stage; and a computer that sets a cross-section of the sample in a processing region of the sample and controls the charged particle beam–emitting optical system and the drive mechanism when slicing the set processing region. The computer sets an irradiation position in a position where each of a plurality of emitted charged particle beams overlap in a first direction of the sample processing region when slicing the processing region.
This charged particle beam device, which is for etching a sample, comprises: a charged particle beam–emitting optical system that emits a charged particle beam; a sample stage that holds a sample; a drive mechanism that drives the sample stage; a gas supply part that supplies etching gas to the surface of the sample; and a computer that sets a processing region of the sample and controls the charged particle beam–emitting optical system and the drive mechanism so as to irradiate the set processing region with the charged particle beam and etch the sample. The computer sets a processing region on the sample that differs with each scan.
H01J 37/305 - Tubes à faisceau électronique ou ionique destinés aux traitements localisés d'objets pour couler, fondre, évaporer ou décaper
H01J 37/317 - Tubes à faisceau électronique ou ionique destinés aux traitements localisés d'objets pour modifier les propriétés des objets ou pour leur appliquer des revêtements en couche mince, p. ex. implantation d'ions
This machining method includes: a machining step of irradiating a sample constituted from a stack of multiple layers with a focused ion beam so as to machine a cross-section of the sample by a predetermined amount; an image generation step of generating an observation image of the cross-section of the sample by irradiating the sample with an electron beam after the machining step is ended; and a specific-layer determination step of determining whether a specific layer of the multiple layers has been exposed or not on the basis of the observation image.
The present invention provides a control method for a charged particle beam device for irradiating a focused ion beam onto a sample in which a plurality of layers are laminated, thereby processing a cross-section of the sample at a processing angle that is a prescribed angle. The control method includes: an image generation step for irradiating an electron beam onto the sample, detecting secondary electrons or reflected electrons generated from the sample, and generating an observation image of a cross-section of the sample on the basis of the detection result; an angle deviation calculation step for calculating the angle deviation between the angle of the cross-section and the processing angle on the basis of the observation image; and, a control step for controlling the attitude of the sample or the irradiation direction of the electron beam so as to eliminate the angle deviation calculated in the angle deviation calculation step.
The present invention provides a computer, a program, and a charged particle beam processing system, with which it is possible to reduce adjustment and setting work of conditions for observation or machining by an operator in an FIB-SEM composite device. This computer comprises: an information acquisition unit that acquires information relating to a recipe to be executed by a charged particle beam device provided with a charged particle irradiation optical system; and an information management unit that generates recipe management information on the basis of the information acquired by the information acquisition unit and stores the recipe management information in a storage unit.
This charged particle beam device (10) comprises a focused ion beam irradiation optical system (14), an electron beam irradiation optical system (15), a needle (18), a needle-driving mechanism (19), a display device (21), and a computer (22). The computer (22) stores coordinate data for the needle-driving mechanism (19) when the tip of the needle (18) matches a prescribed position in an image obtained by irradiating the needle (18) with a focused ion beam or an electron beam. The computer (22) controls the needle-driving mechanism (19) and the focused ion beam irradiation optical system (14) such that when the total amount of change in the coordinate data in a suitable period is at least a prescribed threshold, a process is executed for removing, by means of irradiation with the focused ion beam, at least a portion of a deposition film attached to the tip of the needle (18).
H01J 37/20 - Moyens de support ou de mise en position de l'objet ou du matériauMoyens de réglage de diaphragmes ou de lentilles associées au support
H01J 37/317 - Tubes à faisceau électronique ou ionique destinés aux traitements localisés d'objets pour modifier les propriétés des objets ou pour leur appliquer des revêtements en couche mince, p. ex. implantation d'ions
10.
CHARGED PARTICLE BEAM DEVICE AND METHOD FOR ADJUSTING CHARGED PARTICLE BEAM DEVICE
An ion beam lens barrel (17) of this charged particle beam device comprises an ion source (41) and an ion optical system (42). The ion optical system (42) comprises an aperture member (62) having formed therein multiple through-holes (62a), from among which a selection is made in order to allow a portion of a beam of ions (ion beam IB) generated from the ion source (41) to pass. A control device of the charged particle beam device records position information of observation axes, that is, predetermined axes in accordance with a reference sample (R) which has been positioned with respect to the predetermined axes, as recognized in an image obtained by irradiating the reference sample (R) with the ion beam. The control device drives the aperture member (62) using a drive mechanism such that predetermined parts forming some of the through-holes (62a) as recognized in an image obtained by irradiating the aperture member (62) with the ion beam are positioned with respect to the observation axes.
H01J 37/04 - Dispositions des électrodes et organes associés en vue de produire ou de commander la décharge, p. ex. dispositif électronoptique, dispositif ionoptique
H01J 37/09 - DiaphragmesÉcrans associés aux dispositifs électronoptiques ou ionoptiquesCompensation des champs perturbateurs
H01J 37/305 - Tubes à faisceau électronique ou ionique destinés aux traitements localisés d'objets pour couler, fondre, évaporer ou décaper
A focused ion beam lens barrel (17) of this charged particle beam device comprises an ion source (41) and an ion optical system (42). The ion optical system (42) comprises an aperture member (54b) having formed therein a plurality of through-holes that are switched in order to cause a portion of the beams (ion beams) of the ions generated by the ion source (41) to pass therethrough. Any of the plurality of through-holes are switched while the optical conditions of the ion optical system (42) are maintained in a prescribed projection mode (second projection mode). The plurality of through-holes include fine round holes for viewing that are disposed in the center of the ion beam, and first rectangular holes for processing and second rectangular holes for viewing and processing that are disposed away from the center of the ion beam.
An ion beam tube (17) of a composite beam device (10) is provided with an ion source (41) and an ion optical system (42). The ion optical system (42) is provided with a diaphragm member (55b) in which at least one through-hole (55c) that is switchable in order to pass part of an ion beam (ion beam IB) generated from the ion source (41) therethrough is formed. The ion optical system (42) is provided with a blocking member (54b) that blocks part of the ion beam passing through the through-hole (55c) of the diaphragm member (55b), and a blocking drive mechanism (54a) that drives the blocking member (54b). The blocking drive mechanism (54a) performs switching between the presence and absence of blocking of the ion beam passing through the through-hole (55c) of the diaphragm member (55b) by the blocking member (54b) in a state where the ion optical system (42) maintains a predetermined optical condition.
When a measurement sample whose absorbance greatly changes depending on a wavelength range is measured, measurement with a high S/N ratio and accuracy can be efficiently performed in a short time.
e) and the scanning speed according to the measurement conditions for each wavelength range.
G01N 21/25 - CouleurPropriétés spectrales, c.-à-d. comparaison de l'effet du matériau sur la lumière pour plusieurs longueurs d'ondes ou plusieurs bandes de longueurs d'ondes différentes
G01N 21/33 - CouleurPropriétés spectrales, c.-à-d. comparaison de l'effet du matériau sur la lumière pour plusieurs longueurs d'ondes ou plusieurs bandes de longueurs d'ondes différentes en recherchant l'effet relatif du matériau pour les longueurs d'ondes caractéristiques d'éléments ou de molécules spécifiques, p. ex. spectrométrie d'absorption atomique en utilisant la lumière ultraviolette
G01N 21/3577 - CouleurPropriétés spectrales, c.-à-d. comparaison de l'effet du matériau sur la lumière pour plusieurs longueurs d'ondes ou plusieurs bandes de longueurs d'ondes différentes en recherchant l'effet relatif du matériau pour les longueurs d'ondes caractéristiques d'éléments ou de molécules spécifiques, p. ex. spectrométrie d'absorption atomique en utilisant la lumière infrarouge pour l'analyse de liquides, p. ex. l'eau polluée
G01N 21/359 - CouleurPropriétés spectrales, c.-à-d. comparaison de l'effet du matériau sur la lumière pour plusieurs longueurs d'ondes ou plusieurs bandes de longueurs d'ondes différentes en recherchant l'effet relatif du matériau pour les longueurs d'ondes caractéristiques d'éléments ou de molécules spécifiques, p. ex. spectrométrie d'absorption atomique en utilisant la lumière infrarouge en utilisant la lumière de l'infrarouge proche
A chromatographic data system processing apparatus includes a liquid feeder, a sample injector, a column that separates samples, a detector, a controller that processes a detected result of the detector, and a data processor that examines and sets operations of the liquid feeder, the column and the detector, and a measurement condition. The data processor generates a three-dimensional graph having three axes related to a pressure, a time, and a number of theoretical plates based on data or variables indicating a relationship between the number of theoretical plates and a flow rate, and data or variables indicating a relationship between the pressure and the flow rate. The chromatographic data system processing apparatus can easily obtain a separation condition for obtaining performance from a three-dimensional graph including a pressure drop, a hold-up time and a number of theoretical plates.
An inspection method of a membrane electrode assembly includes a first process of acquiring an X-ray transmission image of the membrane electrode assembly, a second process of identifying a luminance-reduced region having a luminance lower than a luminance of a surrounding region in the X-ray transmission image acquired in the first process, a third process of correcting the luminance of the luminance-reduced region identified in the second process, in accordance with a planar size of the luminance-reduced region, based on a correlation between a planar size of a foreign matter in the membrane electrode assembly and change in luminance due to diffraction of X-rays, and a fourth process of finding a thickness of the foreign matter in the membrane electrode assembly based on the luminance corrected in the third process.
G01N 23/18 - Recherche de la présence de défauts ou de matériaux étrangers
G01N 23/04 - Recherche ou analyse des matériaux par l'utilisation de rayonnement [ondes ou particules], p. ex. rayons X ou neutrons, non couvertes par les groupes , ou en transmettant la radiation à travers le matériau et formant des images des matériaux
G01N 23/083 - Recherche ou analyse des matériaux par l'utilisation de rayonnement [ondes ou particules], p. ex. rayons X ou neutrons, non couvertes par les groupes , ou en transmettant la radiation à travers le matériau et mesurant l'absorption le rayonnement consistant en rayons X
G01B 15/02 - Dispositions pour la mesure caractérisées par l'utilisation d'ondes électromagnétiques ou de radiations de particules, p. ex. par l'utilisation de micro-ondes, de rayons X, de rayons gamma ou d'électrons pour mesurer l'épaisseur
16.
Pattern measurement device and pattern measurement method
A computation device is provided for measuring the dimensions of patterns formed on a sample based on a signal obtained from a charged particle beam device. The computation device includes a positional deviation amount calculation unit for calculating the amount of positional deviation in a direction parallel to a wafer surface between two patterns having different heights based on an image acquired at a given beam tilt angle; a pattern inclination amount calculation unit for calculating an amount of pattern inclination from the amount of positional deviation using a predetermined relational expression for the amount of positional deviation and the amount of pattern inclination; and a beam tilt control amount calculation unit for controlling the beam tilt angle so as to match the amount of pattern inclination. The pattern measurement device sets the beam tilt angle to a calculated beam tilt angle, reacquires an image and measures the patterns.
G03F 7/00 - Production par voie photomécanique, p. ex. photolithographique, de surfaces texturées, p. ex. surfaces impriméesMatériaux à cet effet, p. ex. comportant des photoréservesAppareillages spécialement adaptés à cet effet
G01B 15/04 - Dispositions pour la mesure caractérisées par l'utilisation d'ondes électromagnétiques ou de radiations de particules, p. ex. par l'utilisation de micro-ondes, de rayons X, de rayons gamma ou d'électrons pour mesurer des contours ou des courbes
G01N 23/225 - Recherche ou analyse des matériaux par l'utilisation de rayonnement [ondes ou particules], p. ex. rayons X ou neutrons, non couvertes par les groupes , ou en mesurant l'émission secondaire de matériaux en utilisant des microsondes électroniques ou ioniques
This sample piece relocating device (10) comprises an optical interferometry device (11), a sample piece carrying device (13) and a control device (21). The control device (21) controls the sample piece carrying device (13) on the basis of information related to a process in which a charged-particle beam device is used to irradiate a sample (S) with a charged-particle beam, thereby preparing a sample piece. The sample piece carrying device (13) controlled by the control device (21) separates and extracts the sample piece from the sample (S) and holds and carries the sample piece to a sample piece holder.
Provided is a spectrofluorophotometer acquiring both a spectrum and a sample image in measurement of fluorescence of a liquid sample.
A spectrofluorophotometer includes a light source, an excitation-side spectroscope that performs spectral dispersion of light of the light source and generates excitation light, a fluorescence-side spectroscope that performs spectral dispersion of fluorescence emitted from a sample irradiated with excitation light into monochromatic light, a sample container installation portion for holding a sample container which receives a liquid sample and is formed of a transparent material, a detector that detects fluorescence emitted from the liquid sample, and an image capturing device that captures a sample image of a sample emitting fluorescence. The sample container installation portion includes a port for allowing excitation light to pass therethrough, a port for allowing fluorescence emitted from a sample to pass therethrough, and a port for allowing the image capturing device to observe a sample.
A method of washing an aspiration probe of an in-vitro diagnostic system is disclosed. The aspiration probe comprises an outer surface and an inner surface forming an inner space for receiving a fluid. The method comprises dipping the aspiration probe into a first wash fluid so that the outer surface is immersed at least in part into the first wash fluid, aspirating an amount of the first wash fluid into the inner space of the aspiration probe, propagating an ultrasonic vibration to the outer surface of the aspiration probe via the first wash fluid, and rinsing the outer surface and the inner surface of the aspiration probe with a second wash fluid. Further, an in-vitro diagnostic method and an in-vitro diagnostic system are disclosed.
G01N 35/10 - Dispositifs pour transférer les échantillons vers, dans ou à partir de l'appareil d'analyse, p. ex. dispositifs d'aspiration, dispositifs d'injection
G01N 35/00 - Analyse automatique non limitée à des procédés ou à des matériaux spécifiés dans un seul des groupes Manipulation de matériaux à cet effet
B01F 31/00 - Mélangeurs avec mécanismes à secousses, oscillants ou vibrants
20.
Liquid chromatography data processing device, and liquid chromatography device
In order to obtain analysis conditions, there is provided a liquid chromatography data processing device which generates, based on data regarding analysis conditions of a chromatography device and data on separation performance, display data that displays a graph showing correspondence of data regarding analysis conditions of the chromatography device and separation performance, generating a first group of biaxial data regarding the above analysis conditions, second group of biaxial data obtained by calculation comprising multiplication and/or division of two data of the first group of biaxial data, and display data according to a graph showing correspondence of the data regarding separation performance, wherein at least each axis of the first group of biaxial data and the second group of biaxial data is represented as a logarithmic axis.
Automated processing is provided. A charged particle beam apparatus includes: an image identity degree determination unit determining whether an identity degree is equal to or greater than a predetermined value, the identity degree indicating a degree of identity between a processing cross-section image that is an SEM image obtained through observation of a cross section of the sample by a scanning electron microscope, and a criterion image that is the processing cross-section image previously registered; and a post-determination processing unit performing a predetermined processing operation according to a result of the determination by the image identity degree determination unit.
An object of the present invention is to provide an optical measurement technology capable of quantitatively measuring a size distribution of a particle that performs Brownian motion in a sample. A size distribution measurement device according to the present invention measures a reflected light intensity while scanning a focal point position along an optical axis direction of measurement light, and calculates the size distribution of the particle according to the highest reflected light intensity of the measured reflected light intensities (refer to FIG. 9).
An object of the present disclosure is to provide a charged particle beam apparatus that can quickly find a correction condition for a new aberration that is generated in association with beam adjustment. In order to achieve the above object, the present disclosure proposes a charged particle beam apparatus configured to include an objective lens (7) configured to focus a beam emitted from a charged particle source and irradiate a specimen, a visual field movement deflector (5 and 6) configured to deflect an arrival position of the beam with respect to the specimen, and an aberration correction unit (3 and 4) disposed between the visual field movement deflector and the charged particle source, in which the aberration correction unit is configured to suppress a change in the arrival position of the beam irradiated under different beam irradiation conditions.
An automatic sample preparation apparatus that automatically prepares a sample piece from a sample and includes a focused ion beam irradiation optical system, an electron beam irradiation optical system configured to irradiate an electron beam from a direction different from a direction of the focused ion beam, a sample piece transfer device configured to hold and transfer the sample piece separated and extracted from the sample, a detector configured to detect secondary charged particles emitted from an irradiation object, and a computer configured to recognize a position of the sample piece transfer device by image-recognition using an image data of the focused ion beam and the electron beam generated by irradiating the sample piece transfer device with the focused ion beam and the electron beam, and drive the sample piece transfer device, wherein the image data includes a reference mark.
G01N 1/44 - Traitement d'échantillons mettant en œuvre un rayonnement, p. ex. de la chaleur
G01N 1/28 - Préparation d'échantillons pour l'analyse
H01J 37/31 - Tubes à faisceau électronique ou ionique destinés aux traitements localisés d'objets pour couper ou perforer
H01J 37/317 - Tubes à faisceau électronique ou ionique destinés aux traitements localisés d'objets pour modifier les propriétés des objets ou pour leur appliquer des revêtements en couche mince, p. ex. implantation d'ions
Provided is a focused ion beam processing apparatus including: an ion source; a sample stage a condenser lens; an aperture having a slit in a straight line shape; a projection lens and the sample stage, wherein, in a transfer mode, by Köhler illumination, with an applied voltage of the condenser lens when a focused ion beam is focused on a main surface of the projection lens scaled to be 100, the applied voltage is set to be less than 100 and greater than or equal to 80; a position of the aperture is set such that the focused ion beam is masked by the aperture with the one side of the aperture at a distance greater than 0 μm and equal to or less than 500 μm from a center of the focused ion beam; and the shape of the slit is transferred onto the sample.
H01J 37/09 - DiaphragmesÉcrans associés aux dispositifs électronoptiques ou ionoptiquesCompensation des champs perturbateurs
H01J 37/317 - Tubes à faisceau électronique ou ionique destinés aux traitements localisés d'objets pour modifier les propriétés des objets ou pour leur appliquer des revêtements en couche mince, p. ex. implantation d'ions
A method for observing a biological tissue sample includes: forming a sample block; cutting up the sample block into a plurality of sample pieces and fixing each of the sample pieces to a sample piece placement member to form a plurality of observation samples; specifying an observation target area for performing precise observation; specifying and registering a coordinate of the observation target area on the sample piece for each of the observation samples; milling including irradiating the observation target area of the sample piece with an ion beam using gas as an ion source or a neutral particle beam with reference to the coordinate and exposing an observation surface inside the sample piece; and obtaining a SEM image of the observation surface with a scanning electron microscope.
G01N 1/28 - Préparation d'échantillons pour l'analyse
G01N 23/2251 - Recherche ou analyse des matériaux par l'utilisation de rayonnement [ondes ou particules], p. ex. rayons X ou neutrons, non couvertes par les groupes , ou en mesurant l'émission secondaire de matériaux en utilisant des microsondes électroniques ou ioniques en utilisant des faisceaux d’électrons incidents, p. ex. la microscopie électronique à balayage [SEM]
Provided is a particle beam apparatus capable of performing appropriate switching selectively between charged particle beam and neutral particle beam. A particle beam column (19) includes an ion source (41), a condenser lens (52), a charge exchange grid (55), and an objective lens (56). The ion source (41) generates ions. The condenser lens (52) changes focusing of the ion beam so that switching is performed between ion beam and neutral beam as particle beam with which a sample (S) is irradiated. The charge exchange grid (55) converts at least a part of ion beam into neutral particle beam through neutralization. The objective lens (56) is placed downstream of the charge exchange grid (55). The objective lens (56) reduces the ion beam toward the sample (S) when the sample (S) is irradiated with the neutral particle beam as the particle beam.
Provided is a charged particle beam apparatus including a focused ion beam column, a sample holder, a stage supporting the sample holder, a securing member rotating unit, a stage driving unit, and a control device. The sample holder includes a securing member fixing a sample. The securing member rotating unit rotates the securing member around a first rotational axis and a second rotational axis. The stage driving unit translates the stage in three dimensions and rotates the stage around a third rotational axis. The control device acquires a correction value for correcting a change in a position of a center of rotation for rotation around at least one among a first rotational axis, a second rotational axis, and a third rotational axis. The control device translates the stage according to the correction value.
Provided are a scanning probe microscope and a setting method thereof that contribute to a reduction in the time taken for measuring. The scanning probe microscope includes: a movement driving unit capable of moving a cantilever and a sample relatively in at least a z direction; and a control device operating an approach operation of making the cantilever and the sample approach to each other at a predetermined speed by controlling the movement driving unit, and stopping the approach operation when it is determined that the probe and the sample are in contact with each other, wherein the predetermined speed is set such that when the control for stopping the approach operation is performed, force applied to the sample due to contact between the probe and the sample does not exceed a preset first force.
Provided is a thermal analyzer, with which a sample can be observed even under a state in which a heat sink is cooled to a room temperature or lower. The thermal analyzer includes: the heat sink, in which a measurement sample container and a reference sample container are placed; a heat sink cover configured to cover the heat sink; a heat sink window provided in the heat sink; a heat sink cover window provided in the heat sink cover; an imaging device configured to image the sample in the heat sink through the heat sink window and the heat sink cover window; a purge gas introduction portion, through which a purge gas is introduced into the heat sink; and a discharge port, through which the purge gas is allowed to flow from one of the heat sink window and the heat sink to a space inside the heat sink cover.
G01N 25/20 - Recherche ou analyse des matériaux par l'utilisation de moyens thermiques en recherchant la production de quantités de chaleur, c.-à-d. la calorimétrie, p. ex. en mesurant la chaleur spécifique, en mesurant la conductivité thermique
G01N 25/02 - Recherche ou analyse des matériaux par l'utilisation de moyens thermiques en recherchant les changements d'état ou de phaseRecherche ou analyse des matériaux par l'utilisation de moyens thermiques en recherchant le frittage
31.
Controller for thermal analysis apparatus, and thermal analysis apparatus
Provided are a controller for a thermal analysis apparatus, with which thermal characteristics of a measurement target can be grasped, and a thermal analysis apparatus. A controller (51) for a thermal analysis apparatus, which is configured to measure thermal behavior accompanying a temperature change caused by one of heating and cooling of a measurement target (X, Y), is configured to: acquire an intensity of a response signal of the measurement target to an electromagnetic wave with which the measurement target is irradiated with respect to a variable of one of a time and a temperature; differentiate the intensity with respect to the variable; and output a derivative value obtained as a result of the differentiation with respect to one of the temperature and the time, or display the derivative value with respect to one of the temperature and the time on a predetermined display (53).
G01N 25/20 - Recherche ou analyse des matériaux par l'utilisation de moyens thermiques en recherchant la production de quantités de chaleur, c.-à-d. la calorimétrie, p. ex. en mesurant la chaleur spécifique, en mesurant la conductivité thermique
G01N 21/00 - Recherche ou analyse des matériaux par l'utilisation de moyens optiques, c.-à-d. en utilisant des ondes submillimétriques, de la lumière infrarouge, visible ou ultraviolette
G01J 5/00 - Pyrométrie des radiations, p. ex. thermométrie infrarouge ou optique
32.
Inspecting method and inspection apparatus for membraneelectrode assembly
A method of inspecting a membrane-electrode assembly includes obtaining an X-ray transmission image by applying X-rays to the membrane-electrode assembly, and determining whether a foreign matter having a size equal to or larger than a predetermined value is included in the membrane-electrode assembly, according to a brightness reduction amount in each pixel of the X-ray transmission image obtained, while referring to a correlative relationship between the size of the foreign matter measured in a planar direction of the membrane-electrode assembly, and the brightness reduction amount in the X-ray transmission image.
G01N 23/04 - Recherche ou analyse des matériaux par l'utilisation de rayonnement [ondes ou particules], p. ex. rayons X ou neutrons, non couvertes par les groupes , ou en transmettant la radiation à travers le matériau et formant des images des matériaux
G01N 23/18 - Recherche de la présence de défauts ou de matériaux étrangers
H01M 8/1004 - Éléments à combustible avec électrolytes solides caractérisés par les ensembles membrane-électrodes [MEA]
G01N 23/083 - Recherche ou analyse des matériaux par l'utilisation de rayonnement [ondes ou particules], p. ex. rayons X ou neutrons, non couvertes par les groupes , ou en transmettant la radiation à travers le matériau et mesurant l'absorption le rayonnement consistant en rayons X
G01B 15/02 - Dispositions pour la mesure caractérisées par l'utilisation d'ondes électromagnétiques ou de radiations de particules, p. ex. par l'utilisation de micro-ondes, de rayons X, de rayons gamma ou d'électrons pour mesurer l'épaisseur
G01N 23/16 - Recherche ou analyse des matériaux par l'utilisation de rayonnement [ondes ou particules], p. ex. rayons X ou neutrons, non couvertes par les groupes , ou en transmettant la radiation à travers le matériau et mesurant l'absorption le matériau étant une feuille ou un film en mouvement
An object of the present disclosure is to provide a charged particle beam apparatus that can quickly find a correction condition for a new aberration that is generated in association with beam adjustment. In order to achieve the above object, the present disclosure proposes a charged particle beam apparatus configured to include an objective lens (7) configured to focus a beam emitted from a charged particle source and irradiate a specimen, a visual field movement deflector (5 and 6) configured to deflect an arrival position of the beam with respect to the specimen, and an aberration correction unit (3 and 4) disposed between the visual field movement deflector and the charged particle source, in which the aberration correction unit is configured to suppress a change in the arrival position of the beam irradiated under different beam irradiation conditions.
An electrophoresis device has: a sample tray (112) on which there are placed a positive-electrode-side buffer solution container (103) containing a buffer solution and a phoresis medium container (102) containing a phoresis medium, and which is driven in a vertical direction and a horizontal direction; a thermostat oven unit (113) that holds a capillary array having a capillary head in which a plurality of capillaries are bundled in a single unit at one end thereof in a state where the capillary array being held in a state in which the capillary head protrudes downward, and that keeps the interior temperature constant; a solution-delivering mechanism (106) for delivering the phoresis medium in the phoresis medium container to the capillary array from the capillary head; and a power source for applying a voltage to both ends of the capillary array. Holes for insertion of the capillary head are provided in upper sections of the positive-electrode-side buffer solution container and the phoresis medium container. The thermostat oven unit is provided with a first lid member (207) that is positioned above the sample tray and seals the upper section of the positive-electrode-side buffer solution container while the phoresis medium is being delivered by the solution-delivering mechanism.
The X-ray inspection apparatus includes an X-ray source, a sample moving mechanism, an X-ray detector equipped with a line sensor with pixels detecting X-ray radiation passing through a sample, an image storage unit for storing X-ray radiation intensities, an intensity correction unit for correcting the X-ray radiation intensities stored in the image storage unit, and a defect detector for detecting a defect in the sample. The intensity correction unit sets an intensity of X-rays detected from the inspection initiation region after starting inspection of the sample or an intensity of X-rays preliminarily detected from the sample before starting the inspection as a reference radiation intensity, and corrects an intensity of X-rays detected from the subsequent inspection region based on a correction coefficient obtained from comparison between the intensity of X-rays detected from the subsequent inspection region and the reference radiation intensity.
G01N 23/04 - Recherche ou analyse des matériaux par l'utilisation de rayonnement [ondes ou particules], p. ex. rayons X ou neutrons, non couvertes par les groupes , ou en transmettant la radiation à travers le matériau et formant des images des matériaux
G01N 23/10 - Recherche ou analyse des matériaux par l'utilisation de rayonnement [ondes ou particules], p. ex. rayons X ou neutrons, non couvertes par les groupes , ou en transmettant la radiation à travers le matériau et mesurant l'absorption le matériau étant confiné dans un récipient, p. ex. scanners de bagage à rayons X
G01N 23/20 - Recherche ou analyse des matériaux par l'utilisation de rayonnement [ondes ou particules], p. ex. rayons X ou neutrons, non couvertes par les groupes , ou en utilisant la diffraction de la radiation par les matériaux, p. ex. pour rechercher la structure cristallineRecherche ou analyse des matériaux par l'utilisation de rayonnement [ondes ou particules], p. ex. rayons X ou neutrons, non couvertes par les groupes , ou en utilisant la diffusion de la radiation par les matériaux, p. ex. pour rechercher les matériaux non cristallinsRecherche ou analyse des matériaux par l'utilisation de rayonnement [ondes ou particules], p. ex. rayons X ou neutrons, non couvertes par les groupes , ou en utilisant la réflexion de la radiation par les matériaux
G01N 23/18 - Recherche de la présence de défauts ou de matériaux étrangers
G01N 23/083 - Recherche ou analyse des matériaux par l'utilisation de rayonnement [ondes ou particules], p. ex. rayons X ou neutrons, non couvertes par les groupes , ou en transmettant la radiation à travers le matériau et mesurant l'absorption le rayonnement consistant en rayons X
A composite charged particle beam apparatus includes a first charged particle beam column that irradiates a thin sample with a first charged particle beam, and a second charged particle beam column that irradiates an irradiation position of the first charged particle beam on the thin sample with a second charged particle beam. A sample holder as a base stage disposed on a sample stage, a motor-driven rotation driving section, a rotation stand rotatable about a flip axis by the driving of the rotation driving section, and a TEM grid that holds the thin sample. The TEM grid is movable within a plane perpendicular to an observation surface of the thin sample together with the rotation stand by being reciprocally driven around the flip axis by the driving section.
In an is-TPG method in which lasers having two different wavelengths are used to generate a wavelength-variable far-infrared light, a far-infrared light (TPG light) having an unstable output at a broad wavelength is also slightly generated at the same time with only one laser light. The generated is-TPG and the TPG light are converted, after passing through a specimen, to near-infrared light inside a nonlinear optical crystal for detection and are observed by a detector. The signal light output of the is-TPG light becomes unstable due to the TPG light. According to the present invention, the TPG light is removed by means of a slit and the like (filter) immediately before the specimen and is not introduced into the nonlinear optical crystal for detection. At this time, by using a change in the emission direction when the frequency of the is TPG light is changed, the filter is moved in accordance with the frequency so that only the is-TPG light passes therethrough (see FIG. 1C).
G01N 21/3581 - CouleurPropriétés spectrales, c.-à-d. comparaison de l'effet du matériau sur la lumière pour plusieurs longueurs d'ondes ou plusieurs bandes de longueurs d'ondes différentes en recherchant l'effet relatif du matériau pour les longueurs d'ondes caractéristiques d'éléments ou de molécules spécifiques, p. ex. spectrométrie d'absorption atomique en utilisant la lumière infrarouge en utilisant la lumière de l'infrarouge lointainCouleurPropriétés spectrales, c.-à-d. comparaison de l'effet du matériau sur la lumière pour plusieurs longueurs d'ondes ou plusieurs bandes de longueurs d'ondes différentes en recherchant l'effet relatif du matériau pour les longueurs d'ondes caractéristiques d'éléments ou de molécules spécifiques, p. ex. spectrométrie d'absorption atomique en utilisant la lumière infrarouge en utilisant un rayonnement térahertz
G01J 3/10 - Aménagements de sources lumineuses spécialement adaptées à la spectrométrie ou à la colorimétrie
G01J 3/02 - SpectrométrieSpectrophotométrieMonochromateursMesure de la couleur Parties constitutives
G01J 3/42 - Spectrométrie d'absorptionSpectrométrie à double faisceauSpectrométrie par scintillementSpectrométrie par réflexion
38.
Charged particle beam apparatus, composite charged particle beam apparatus, and control method for charged particle beam apparatus
The charged particle beam apparatus includes: a charged particle source configured to generate charged particles; a plurality of scanning electrodes configured to generate electric fields for deflecting charged particles that are emitted by applying an acceleration voltage to the charged particle source, and applying an extraction voltage to an extraction electrode configured to extract the charged particles; an electrostatic lens, which is provided between the plurality of scanning electrodes and a sample table, and is configured to focus a charged particle beam deflected by the plurality of scanning electrodes; and a processing unit configured to obtain a measurement condition, and set each of scanning voltages to be applied to the plurality of scanning electrodes based on the obtained measurement condition.
The focused ion beam apparatus includes: an ion source configured to generate ions; a first electrostatic lens configured to accelerate and focus the ions to form an ion beam; a beam booster electrode configured to accelerate the ion beam to a higher level; one or a plurality of electrodes, which are placed in the beam booster electrode, and are configured to electrostatically deflect the ion beam; a second electrostatic lens, which is provided between the one or plurality of electrodes and a sample table, and is configured to focus the ion beam applied with a voltage; and a processing unit configured to obtain a measurement condition, and set at least one of voltages to be applied to the one or plurality of electrodes or a voltage to be applied to each of the first electrostatic lens and the second electrostatic lens, based on the obtained measurement condition.
The particle beam irradiation apparatus includes: an irradiation unit configured to radiate a particle beam; a first detection unit configured to detect first particles; a second detection unit configured to detect second particles; an image forming unit configured to form an observation image based on a first signal obtained by the detection of the first particles, which is performed by the first detection unit, and to form an observation image based on a second signal obtained by the detection of the second particles, which is performed by the second detection unit; and a control unit configured to calculate a brightness of a first region in the formed first observation image and perform a brightness adjustment of the first detection unit based on a first target brightness as a first brightness adjustment when the brightness of the first region is different from the first target brightness.
A sample holder (19) includes a base portion (41), a sample carrying portion (42), a rotation guide portion (43), a cooling stage (46), a connection member (47), a first support portion, and a fixing guide portion (48). The base portion (41) is configured to be fixed to a stage (12), which is configured to be driven to rotate by a stage driving mechanism (13). The rotation guide portion (43) is configured to guide synchronous rotation of the base portion (41) and the sample carrying portion (42). The cooling stage (46) is configured to cool a sample (S). The connection member (47) is configured to be connected to the cooling stage (46). The first support portion is configured to support the base portion (41), which is configured to be driven to rotate by the stage (12).
The focused ion beam apparatus includes: an electron beam column; a focused ion beam column; a sample stage; a coordinate acquisition unit configured to acquire, when a plurality of irradiation positions to which the focused ion beam is to be applied are designated on a sample, plane coordinates of each of the irradiation positions; a movement amount calculation unit configured to calculate, based on the plane coordinates, a movement amount by which the sample stage is to be moved to a eucentric height so that the eucentric height matches an intersection position at which the electron beam and the focused ion beam match each other at each of the irradiation positions; and a sample stage movement control unit configured to move, based on the movement amount, the sample stage to the eucentric height at each of the irradiation positions.
A liquid metal ion source (50) includes: a reservoir (10) configured to hold an ion material (M) forming a liquid metal; a needle electrode (20); an extraction electrode (22) configured to cause an ion of the ion material to be emitted from a distal end of the needle electrode; a beam diaphragm (24), which is arranged on a downstream side of the extraction electrode, and is configured to limit a beam diameter of the ion; and a vacuum chamber (30) configured to accommodate and hold the reservoir, the needle electrode, the extraction electrode, and the beam diaphragm in vacuum, wherein the liquid metal ion source further includes an oxidizing gas introducing portion (40), and wherein the oxidizing gas introducing portion communicates to the vacuum chamber, and is configured to introduce an oxidizing gas into a periphery of the needle electrode.
The charged particle beam irradiation apparatus includes: a focused ion beam column; an electron beam column; an electron detector; an image forming unit configured to form an observation image based on a signal output from the electron detector; and a control unit configured to repeatedly perform exposure control in which the focused ion beam column is controlled to expose a cross section of a multilayered sample toward a stacking direction with the focused ion beam, the control unit being configured to perform, every time exposure of an observation target layer at a cross section of the multilayered sample is detected in a process of repeatedly performing the exposure control, observation control in which the electron beam column is controlled to radiate the electron beam, and the image forming unit is controlled to form an observation image of the cross section of the multilayered sample.
H01J 37/26 - Microscopes électroniques ou ioniquesTubes à diffraction d'électrons ou d'ions
H01J 37/28 - Microscopes électroniques ou ioniquesTubes à diffraction d'électrons ou d'ions avec faisceaux de balayage
H01J 37/244 - DétecteursComposants ou circuits associés
G01N 23/2251 - Recherche ou analyse des matériaux par l'utilisation de rayonnement [ondes ou particules], p. ex. rayons X ou neutrons, non couvertes par les groupes , ou en mesurant l'émission secondaire de matériaux en utilisant des microsondes électroniques ou ioniques en utilisant des faisceaux d’électrons incidents, p. ex. la microscopie électronique à balayage [SEM]
G01N 23/2206 - Combinaison de plusieurs mesures, l'une au moins étant celle d’une émission secondaire, p. ex. combinaison d’une mesure d’électrons secondaires [ES] et d’électrons rétrodiffusés [ER]
G01N 23/2258 - Recherche ou analyse des matériaux par l'utilisation de rayonnement [ondes ou particules], p. ex. rayons X ou neutrons, non couvertes par les groupes , ou en mesurant l'émission secondaire de matériaux en utilisant des microsondes électroniques ou ioniques en utilisant des faisceaux d’ions incidents, p. ex. des faisceaux de protons en mesurant l’émission d’ions secondaires, p. ex. spectrométrie de masse à ionisation secondaire [SIMS]
v) and the irradiation axis (20Av) of the focused ion beam, which is exhibited when the sample stage is operated to move the sample table to a predetermined position, based on the three-dimensional data on the sample table and the irradiation axis of the focused ion beam.
To accomplish fast automated micro-sampling, provided is a charged particle beam apparatus, which is configured to automatically fabricate a sample piece from a sample, the charged particle beam apparatus including: a charged particle beam irradiation optical system configured to radiate a charged particle beam; a sample stage configured to move the sample that is placed on the sample stage; a sample piece transportation unit configured to hold and convey the sample piece separated and extracted from the sample; a holder fixing base configured to hold a sample piece holder to which the sample piece is transported; and a computer configured to perform position control with respect to a second target, based on a machine learning model in which first information including a first image of a first target is learned, and on second information including a second image, which is obtained by irradiation with the charged particle beam.
To stabilize automated MS, provided is a charged particle beam apparatus, which is configured to automatically fabricate a sample piece from a sample, the charged particle beam apparatus including: a charged particle beam irradiation optical system configured to radiate a charged particle beam; a sample stage configured to move the sample that is placed on the sample stage; a sample piece transportation unit configured to hold and convey the sample piece separated and extracted from the sample; a holder fixing base configured to hold a sample piece holder to which the sample piece is transported; and a computer configured to perform control of a position with respect to a target, based on: a result of second determination about the position, which is executed depending on a result of first determination about the position; and information including an image that is obtained by irradiation with the charged particle beam.
H01J 37/20 - Moyens de support ou de mise en position de l'objet ou du matériauMoyens de réglage de diaphragmes ou de lentilles associées au support
H01J 37/26 - Microscopes électroniques ou ioniquesTubes à diffraction d'électrons ou d'ions
H01J 37/22 - Dispositifs optiques ou photographiques associés au tube
H01J 37/304 - Commande des tubes par une information en provenance des objets, p. ex. signaux de correction
H01J 37/30 - Tubes à faisceau électronique ou ionique destinés aux traitements localisés d'objets
48.
Method of obtaining quantum efficiency distribution, method of displaying quantum efficiency distribution, program for obtaining quantum efficiency distribution, program for displaying quantum efficiency distribution, fluorescence spectrophotometer, and display device
A method of obtaining a quantum efficiency distribution in a predetermined sample surface, including: irradiating a reference material with excitation light belonging to a first wavelength range; obtaining the reference material's image, which includes a first channel for the first wavelength range and a second channel for a second wavelength range, the first and the second channel's irradiation luminance value in each pixel; irradiating the predetermined sample surface with the excitation light; obtaining the first and the second channel's measurement luminance value in each pixel of the image of the predetermined surface; calculating an absorption luminance value from a difference between the first channel's irradiation luminance value and measurement luminance value; calculating a fluorescence luminance value from difference between the second channel's irradiation luminance value and measurement luminance value; calculating quantum efficiency of each pixel based on the values; and obtaining quantum efficiency distribution.
The thermal analysis apparatus configured to measure thermal behavior accompanying a temperature change of a sample in a heating furnace, includes: the heating furnace having an opening, through which the sample is observable; a thermal behavior measurement unit for measuring the thermal behavior; an imaging unit for capturing image data of the sample in the heating furnace through the opening; a storage unit for storing the thermal behavior and the image data with respect to a temperature; a control unit; and an image processing unit for generating predetermined color information based on the image data, the control unit being configured to instruct the image processing unit to generate the predetermined color information with respect to a plurality of temperatures, and cause a predetermined display unit to display a plurality of pieces of the predetermined color information and the thermal behavior in superimposition with respect to the plurality of temperatures.
G01K 11/12 - Mesure de la température basée sur les variations physiques ou chimiques, n'entrant pas dans les groupes , , ou utilisant le changement de couleur, de translucidité ou de réflectance
G01N 25/00 - Recherche ou analyse des matériaux par l'utilisation de moyens thermiques
50.
Automatic sample preparation apparatus and automatic sample preparation method
An automatic sample preparation apparatus that automatically prepares a sample piece from a sample includes: a focused ion beam irradiation optical system configured to irradiate a focused ion beam; an electron beam irradiation optical system configured to irradiate an electron beam from a direction different from a direction of the focused ion beam; a sample piece transfer device configured to hold and transfer the sample piece separated and extracted from the sample; a detector configured to detect secondary charged particles emitted from an irradiation object by irradiating the irradiation object with the focused ion beam and/or the electron beam; and a computer configured to recognize a position of the sample piece transfer device by image-recognition using an image data of the focused ion beam and the electron beam generated by irradiating the sample piece transfer device with the focused ion beam and the electron beam, and drive the transfer device.
G01N 1/44 - Traitement d'échantillons mettant en œuvre un rayonnement, p. ex. de la chaleur
H01J 37/31 - Tubes à faisceau électronique ou ionique destinés aux traitements localisés d'objets pour couper ou perforer
G01N 1/28 - Préparation d'échantillons pour l'analyse
H01J 37/317 - Tubes à faisceau électronique ou ionique destinés aux traitements localisés d'objets pour modifier les propriétés des objets ou pour leur appliquer des revêtements en couche mince, p. ex. implantation d'ions
51.
PLASMA PROCESSING METHOD AND PLASMA PROCESSING DEVICE
Provided is a plasma processing method in which the etching amount is highly uniformly and the processing yield is improved, and a plasma processing device. This method for etching a tungsten film includes: a first step of supplying plasma of an organic gas containing fluorine to a substrate having a tungsten film on at least a portion of the surface thereof to deposit a fluorocarbon layer, and forming an intermediate layer containing tungsten and fluorine and having self-saturating properties between the fluorocarbon layer and the tungsten film; and a second step of removing the fluorocarbon layer and the intermediate layer using plasma of oxygen gas.
H01L 21/3065 - Gravure par plasmaGravure au moyen d'ions réactifs
H01L 21/28 - Fabrication des électrodes sur les corps semi-conducteurs par emploi de procédés ou d'appareils non couverts par les groupes
H01L 27/11556 - Mémoires mortes programmables électriquement; Procédés de fabrication à étapes multiples de ces dispositifs avec grilles flottantes caractérisées par des agencements tridimensionnels, p.ex. avec des cellules à des niveaux différents de hauteur la région de source et la région de drain étant à différents niveaux, p.ex. avec des canaux inclinés les canaux comprenant des parties verticales, p.ex. des canaux en forme de U
H01L 27/11582 - Mémoires mortes programmables électriquement; Procédés de fabrication à étapes multiples de ces dispositifs avec isolateurs de grille à piégeage de charge, p.ex. MNOS ou NROM caractérisées par des agencements tridimensionnels, p.ex. avec des cellules à des niveaux différents de hauteur la région de source et la région de drain étant à différents niveaux, p.ex. avec des canaux inclinés les canaux comprenant des parties verticales, p.ex. canaux en forme de U
This automatic analyzing device is equipped with an interlock unit having: an actuating member which is supported to be movable between a lock position and a release position, and which engages, at the lock position, with a projection provided on a frontward end section of a cover that covers an upper face of a housing, thereby inhibiting the cover from rotating to an open position; an electromagnetic drive means for driving the actuating member; and a drive connection means that connects the actuating member and the electromagnetic drive means together and drives the actuating member by transmitting the movement of the electromagnetic drive means to the actuating member. The interlock unit is disposed on a front face of the housing at a position corresponding to the interlock unit so as to be attachable to and detachable from the housing in a state where a front plate of a front opening has been removed. Due to this configuration, access to the interlock unit is made easier, thereby improving maintenance performance.
G01N 35/00 - Analyse automatique non limitée à des procédés ou à des matériaux spécifiés dans un seul des groupes Manipulation de matériaux à cet effet
53.
PLASMA PROCESSING DEVICE, INTERNAL MEMBER FOR PLASMA PROCESSING DEVICE, AND METHOD FOR MANUFACTURING SAID INTERNAL MEMBER
Provided are: a plasma processing device which suppresses the contamination of samples and improves processing yield; an internal member for a plasma processing device; and a method for manufacturing said internal member. A plasma processing device that uses plasma, which is formed from a processing gas supplied into a processing chamber inside a vacuum vessel, to process a to-be-processed wafer that has been placed in the processing chamber, wherein the surface of a member disposed inside the processing chamber and facing the plasma is formed from a dielectric material, and the dielectric material includes a first material which chemically combines with the supplied processing gas and is volatilized, and a second material in which the volume of a non-volatile compound that is generated by the second material chemically combining with the processing gas is greater than before the chemical combination.
Provided is an interlock unit which can inhibit the rotation of a cover from a closed position to an open position, and which comprises: a hollow case that has a cuboid shape and is disposed in a position that is adjacent to an inner side surface of a housing and below an end of the cover on the opposite side from a support shaft in the closed position; a working member that is provided to the top surface of the case, is movably supported between a non-operating position and an operating position, and in the operating position prevents rotation of the cover to the open position by engaging with a protruding portion provided to the cover; an electromagnetic drive means that is provided below the working member and is for driving the working member; and a driving-coupling means that drives the working member by coupling the working member and the electromagnetic drive means and transmitting the operation of the electromagnetic drive means to the working member. It is thereby possible to improve maintenance of the interlock unit by facilitating access to the interlock unit.
G01N 35/00 - Analyse automatique non limitée à des procédés ou à des matériaux spécifiés dans un seul des groupes Manipulation de matériaux à cet effet
55.
Mask defect repair apparatus and mask defect repair method
Disclosed is a mask defect repair apparatus that is capable of performing defect repair with high accuracy without exposure of a mask to air while being moved between the mask defect repair apparatus and an inspection device. The mask defect repair apparatus emits charged particle beams with an amount of irradiation therewith which is corrected by a correction unit while supplying gas to a defect of the mask, thereby forming a deposition film.
G03F 1/74 - Réparation ou correction des défauts dans un masque par un faisceau de particules chargées [CPB charged particle beam], p. ex. réparation ou correction de défauts par un faisceau d'ions focalisé
H01J 37/317 - Tubes à faisceau électronique ou ionique destinés aux traitements localisés d'objets pour modifier les propriétés des objets ou pour leur appliquer des revêtements en couche mince, p. ex. implantation d'ions
56.
Method of manufacturing emitter, emitter, and focused ion beam apparatus
A method of manufacturing an emitter is disclosed. The method enables a crystal structure of the tip of the front end of the emitter to return to its original state with high reproducibility by rearranging atoms in a treatment, and enables a long lasting emitter to be attained by suppressing extraction voltage rise after the treatment. As a method of manufacturing an emitter having a sharpened needle-shape, the method includes: performing an electropolishing process for the front end of an emitter material having conductivity to taper toward the front end; and performing an etching to make the number of atoms constituting the tip of the front end be a predetermined number or less by further sharpening the front end through an electric field-induced gas etching having constantly applied voltage, while observing the crystal structure of the front end, by a field ion microscope, in a sharp portion having the front end at its apex.
Automated processing is provided. A charged particle beam apparatus includes: an image identity degree determination unit determining whether an identity degree is equal to or greater than a predetermined value, the identity degree indicating a degree of identity between a processing cross-section image that is an SEM image obtained through observation of a cross section of the sample by a scanning electron microscope, and a criterion image that is the processing cross-section image previously registered; and a post-determination processing unit performing a predetermined processing operation according to a result of the determination by the image identity degree determination unit.
A thin-sample-piece fabricating device is provided with a focused-ion-beam irradiation optical system, a stage, a stage driving mechanism, and a computer. The focused-ion-beam irradiation optical system performs irradiation with a focused ion beam (FIB). The stage holds a sample piece (Q). The stage driving mechanism drives the stage. The computer sets a thin-piece forming region serving as a treatment region, as well as a peripheral section surrounding the entire periphery of the thin-piece forming region, on the sample piece (Q). The computer causes irradiation with the focused ion beam (FIB) from a direction crossing the irradiated face of the sample piece (Q) so as to perform etching treatment such that the thickness of the thin-piece forming region becomes less than the thickness of the peripheral section.
H01J 37/317 - Tubes à faisceau électronique ou ionique destinés aux traitements localisés d'objets pour modifier les propriétés des objets ou pour leur appliquer des revêtements en couche mince, p. ex. implantation d'ions
59.
Data processing device for chromatograph, data processing method, and chromatograph
To reduce an arithmetic processing load or an influence of noise at the time of virtual curve calculation processing, provided is a data processing device for a chromatograph, which is configured to execute data processing based on plot data measured by using a chromatograph, the data processing device including a virtual curve calculation data generator configured to obtain a smaller number of pieces of virtual curve calculation data than a number of pieces of the measured plot data; and an arithmetic processor (163) functioning as a virtual curve calculator configured to obtain a virtual curve based on the virtual curve calculation data.
An object of the present disclosure is to propose a height measuring device which performs height measurement with high accuracy at each height with a relatively simple configuration even when the sample surface height changes greatly. A height measuring device which includes a projection optical system configured to project a light ray onto an object to be measured and a detection optical system including a detection element configured to detect a reflected light ray from the object to be measured, where the projection optical system includes a light splitting element (103) which splits a trajectory of the light ray with which the object to be measured is irradiated into a plurality of parts, and thus it is possible to project a light ray to a predetermined position even when the object to be measured is located at a plurality of heights, is proposed.
G01B 11/06 - Dispositions pour la mesure caractérisées par l'utilisation de techniques optiques pour mesurer la longueur, la largeur ou l'épaisseur pour mesurer l'épaisseur
H01J 37/20 - Moyens de support ou de mise en position de l'objet ou du matériauMoyens de réglage de diaphragmes ou de lentilles associées au support
H01J 37/28 - Microscopes électroniques ou ioniquesTubes à diffraction d'électrons ou d'ions avec faisceaux de balayage
A thermal analysis apparatus includes: a cylindrical heating furnace extending in an axial direction; a weight detector arranged on a rear-end side in the axial direction of the cylindrical heating furnace and including levers extending in the axial direction to detect a weight; a connecting portion for connecting the cylindrical heating furnace and the weight detector to communicate an internal space of the cylindrical heating furnace with an internal space of the weight detector and positioning the levers from the weight detector into the cylindrical heating furnace; sample holding portions connected to tip ends of the levers and arranged inside the cylindrical heating furnace and holding a sample; resistance heaters arranged to cover the weight detector and energized by an electric current of 6 A or less; and a heater control part for controlling an energization state of the resistance heaters to maintain the weight detector at a constant temperature.
A fluorescence photometer includes a photometer unit and an optical fiber unit. The photometer unit includes a light source, an excitation-side spectroscope for separating light emitted from the light source to generate excitation light, and a fluorescence-side spectroscope for separating fluorescent light emitted from a sample irradiated with the excitation light to generate monochromatic light. The optical fiber unit guides the excitation light to the sample placed outside the photometer unit and guides the fluorescent light emitted from the sample to the photometer unit and includes an image fiber for capturing an image of the sample, an excitation-side fiber arranged around the image fiber and for guiding the excitation light to the sample, and a fluorescence-side fiber arranged around the image fiber and to guide the fluorescent light emitted from the sample to the photometer unit. The excitation-side fiber and the fluorescence-side fiber are arranged to surround the image fiber.
The present invention reduces the turnaround time of an automated analyzer. During a period when cyclic measurement by a measurement unit is unnecessary, a controller washes a reaction vessel using a washing cycle having a cycle time shorter than that of an analysis cycle. A single analysis cycle and a single washing cycle both include a reaction disc stopping period and rotation period. In the washing cycle, there is no time during the stopping period when a sample dispensing mechanism, reagent dispensing mechanism, or stirring mechanism operates but there is a time when a washing mechanism operates. The washing cycle stopping period is shorter than the analysis cycle stopping period. The amount of rotation of the reaction disk in the analysis cycle rotation period is the same as the amount of rotation of the reaction disk in the washing cycle rotation period.
G01N 35/00 - Analyse automatique non limitée à des procédés ou à des matériaux spécifiés dans un seul des groupes Manipulation de matériaux à cet effet
G01N 35/02 - Analyse automatique non limitée à des procédés ou à des matériaux spécifiés dans un seul des groupes Manipulation de matériaux à cet effet en utilisant une série de récipients à échantillons déplacés par un transporteur passant devant un ou plusieurs postes de traitement ou d'analyse
G01N 35/10 - Dispositifs pour transférer les échantillons vers, dans ou à partir de l'appareil d'analyse, p. ex. dispositifs d'aspiration, dispositifs d'injection
64.
X-ray inspection apparatus and x-ray inspection method
Provided are an X-ray inspection apparatus and an X-ray inspection method. The X-ray inspection apparatus includes: an X-ray source; a sample moving mechanism; the TDI sensor; and a TDI computing unit. The TDI computing unit includes a data transfer unit configured to transfer, to an outside, data of accumulated charges obtained by accumulating and transferring the charges, and has a function of setting in advance, as a determination region, a plurality of columns of line sensors with which the sample is detectable, and of detecting the sample in the determination region. The data transfer unit is configured to set, as detecting rows, rows of the pixels with which the sample has been detected in the determination region and rows around the rows, and transfer, to the outside, the data of accumulated charges only for pixels in the detecting rows.
G01N 23/083 - Recherche ou analyse des matériaux par l'utilisation de rayonnement [ondes ou particules], p. ex. rayons X ou neutrons, non couvertes par les groupes , ou en transmettant la radiation à travers le matériau et mesurant l'absorption le rayonnement consistant en rayons X
H04N 5/372 - Capteurs à dispositif à couplage de charge [CCD]; Registres d'intégration à temps de retard [TDI] ou registres à décalage spécialement adaptés au capteur SSIS
G01N 23/18 - Recherche de la présence de défauts ou de matériaux étrangers
65.
Pattern measurement device and pattern measurement method
The present invention has a computation device for measuring the dimensions of patterns formed on a sample on the basis of a signal obtained from a charged particle beam device. The computation device has a positional deviation amount calculation unit for calculating the amount of positional deviation in a direction parallel to a wafer surface between two patterns having different heights on the basis of an image acquired at a given beam tilt angle; a pattern inclination amount calculation unit for calculating an amount of pattern inclination from the amount of positional deviation using a predetermined relational expression for the amount of positional deviation and the amount of pattern inclination; and a beam tilt control amount calculation unit for controlling the beam tilt angle so as to match the amount of pattern inclination. The pattern measurement device sets the beam tilt angle to a calculated beam tilt angle, reacquires an image and measures the patterns.
G01B 15/04 - Dispositions pour la mesure caractérisées par l'utilisation d'ondes électromagnétiques ou de radiations de particules, p. ex. par l'utilisation de micro-ondes, de rayons X, de rayons gamma ou d'électrons pour mesurer des contours ou des courbes
G01N 23/225 - Recherche ou analyse des matériaux par l'utilisation de rayonnement [ondes ou particules], p. ex. rayons X ou neutrons, non couvertes par les groupes , ou en mesurant l'émission secondaire de matériaux en utilisant des microsondes électroniques ou ioniques
In the case of adopting a configuration in which reagent bottles are radially disposed on a reagent disk and a reagent dispensing mechanism is rotated to access the reagent bottles, one reagent bottle includes a plurality of suction ports in which suction positions are different from each other, resulting in prolonging a step of dispensing a reagent. The invention is directed to an automatic analyzer including: a reagent disk that accommodates a plurality of reagent bottles including a plurality of suction ports and conveys the reagent bottles to a desired position by rotating in a circumferential direction around a central axis; and a reagent dispensing mechanism that rotates around a rotational axis and sucks a reagent of the reagent bottle placed at a predetermined position on the reagent disk. The reagent bottle is accommodated in the reagent disk such that the central axis of the reagent bottle and a diameter of the reagent disk form a predetermined inclination.
G01N 35/10 - Dispositifs pour transférer les échantillons vers, dans ou à partir de l'appareil d'analyse, p. ex. dispositifs d'aspiration, dispositifs d'injection
G01N 35/00 - Analyse automatique non limitée à des procédés ou à des matériaux spécifiés dans un seul des groupes Manipulation de matériaux à cet effet
The present invention realizes a medical material transport system that is low-cost, stable, and safe, the medical material transport system being such that even if a failure occurs in an individual specimen transport device, the failure does not extend to the system as a whole. Collection of a specimen is requested from a specimen collection request terminal 107, and a management unit (108) issues a reception command 110 for the specimen. A drone 101 that has received the reception command 110 for the specimen departs from a standby dock 105 on the basis of the received information and flies to a specimen recovery location 106, and a specimen tray for placing the specimen is taken out from a specimen holder 102. A specimen container is contained in the specimen tray, and the specimen tray is returned to the specimen holder 102 and locked using a lock mechanism. The drone 101 flies to an arrival station 104, and after arriving, uses an unlocking key, and the specimen tray is disengaged from the specimen holder 102. After the specimen container in the specimen tray is collected, the specimen tray is placed in the specimen holder 102, and the drone 101 returns to the standby dock 105.
The present invention makes it possible for an automated analyzer including two or more types of photometers to obtain suitable output of the measurement results of the plurality of photometers and suitable data alarm output even if there is an abnormality, or the like, at the time of measurement. This automated analyzer includes, for example, two types of photometers having different quantitative ranges and an analysis control unit for controlling analysis that includes measurement of a given sample using the two types of photometers. If two types of data alarms corresponding to abnormalities, or the like, during measurement have been added to the two types of measurement results from the two types of photometers, the analysis control unit selects measurement result and data alarm output corresponding to the combination of the two types of data alarms and outputs the same to a user as analysis results.
G01N 35/02 - Analyse automatique non limitée à des procédés ou à des matériaux spécifiés dans un seul des groupes Manipulation de matériaux à cet effet en utilisant une série de récipients à échantillons déplacés par un transporteur passant devant un ou plusieurs postes de traitement ou d'analyse
G01N 35/00 - Analyse automatique non limitée à des procédés ou à des matériaux spécifiés dans un seul des groupes Manipulation de matériaux à cet effet
G01N 21/27 - CouleurPropriétés spectrales, c.-à-d. comparaison de l'effet du matériau sur la lumière pour plusieurs longueurs d'ondes ou plusieurs bandes de longueurs d'ondes différentes en utilisant la détection photo-électrique
G01N 35/10 - Dispositifs pour transférer les échantillons vers, dans ou à partir de l'appareil d'analyse, p. ex. dispositifs d'aspiration, dispositifs d'injection
This automated analysis device is provided with a plurality of analysis units for analyzing a specimen, a buffer portion which holds a plurality of specimen racks on which are placed specimen containers holding the specimen, a sampler portion which conveys the specimen racks held in the buffer portion to the analysis units, and a control portion which, when performing a process to deliver the specimen racks to the plurality of analysis units, outputs synchronization signals to all the plurality of analysis units, wherein the analysis unit performs a delivery process starting from the synchronization signal, and the analysis unit performs a delivery process starting from the synchronization signal.
G01N 35/02 - Analyse automatique non limitée à des procédés ou à des matériaux spécifiés dans un seul des groupes Manipulation de matériaux à cet effet en utilisant une série de récipients à échantillons déplacés par un transporteur passant devant un ou plusieurs postes de traitement ou d'analyse
G01N 35/00 - Analyse automatique non limitée à des procédés ou à des matériaux spécifiés dans un seul des groupes Manipulation de matériaux à cet effet
This gas component monitoring device comprises a gas component monitoring part that forms plasma by re-excitation downstream of an installed position of a workpiece and monitors light emission of the plasma, wherein the gas component monitoring part includes: an introduction gas supply part that supplies an introduction gas; a nozzle part which has a hole through which the introduction gas supplied from the introduction gas supply part passes and an opening for allowing a portion of gas to be analyzed that flows through an exhaust pipe part to be taken up into the interior of the hole at an intermediate point in the hole; a discharge electrode part that causes an electrical discharge in the gas to be analyzed that is taken up into the interior of the nozzle part from the opening and the introduction gas supplied into the hole to generate a plasma inside the nozzle; and a light emission detection part that detects light emission of the plasma generated inside the nozzle by the discharge electrode part.
H01L 21/3065 - Gravure par plasmaGravure au moyen d'ions réactifs
G01N 21/73 - Systèmes dans lesquels le matériau analysé est excité de façon à ce qu'il émette de la lumière ou qu'il produise un changement de la longueur d'onde de la lumière incidente excité thermiquement en utilisant des brûleurs ou torches à plasma
71.
Composite charged particle beam apparatus and control method thereof
Disclosed is a composite charged particle beam apparatus including: an ion supply unit supplying an ion beam; an acceleration voltage application unit applying an acceleration voltage to the ion beam supplied by the ion supply unit to accelerate the ion beam; a first focusing unit focusing the ion beam; a beam booster voltage application unit applying a beam booster voltage to the ion beam; a second focusing unit focusing the ion beam to irradiate a sample; an electron beam emission unit emitting an electron beam to irradiate the sample; and a controller setting a value of the beam booster voltage that the beam booster voltage application unit applies to the ion beam, based on a value of the acceleration voltage applied to the ion beam by the acceleration voltage application unit and of a set value predetermined according to a focal distance of the focused ion beam.
Provided are a thin film sample creation method and a charged particle beam apparatus capable of preventing a thin film sample piece from being damaged. The method includes a process of processing a sample by irradiating a surface of the sample with a focused ion beam (FIB) from a second direction that crosses a normal line to the surface of the sample to create a thin film sample piece and a connection portion positioned at and connected to one side of the thin film sample piece, a process of rotating the sample around the normal line, a process of connecting the thin film sample piece to a needle for holding the thin film sample piece, and a process of separating the thin film sample piece from the sample by irradiating the connection portion with a focused ion beam from a third direction that crosses the normal line.
H01J 37/00 - Tubes à décharge pourvus de moyens permettant l'introduction d'objets ou d'un matériau à exposer à la décharge, p. ex. pour y subir un examen ou un traitement
H01J 37/30 - Tubes à faisceau électronique ou ionique destinés aux traitements localisés d'objets
The present invention provides a semiconductor manufacturing device with which it is possible to use a complex gas to etch, at a high speed and a high accuracy, a metal film containing a transition metal element. This semiconductor manufacturing device has: a vacuum container 60; a processing chamber 1 provided in the vacuum container, a sample 3 that has formed thereon a metal film containing a transition metal element being placed on a stage 4 installed in the processing chamber 1; and a vaporization chamber 2 provided in the vacuum container, a vaporization nozzle unit 70 for vaporizing a complex gas raw material liquid fed from the exterior being installed in the vaporization chamber 2. A complex gas obtained by vaporizing the complex gas raw material liquid is introduced into the processing chamber, and the metal film on the sample is etched.
Provided is a technique which pertains to a method for operating a vacuum processing device and with which effective transportation and processing can be achieved in processing a plurality of steps when the vacuum processing device is a link type vacuum processing device. A method for operating a vacuum processing device according to an embodiment has a first step (steps 601-607) for selecting a single first processing unit and a single second processing unit among a plurality of processing units with regard to each of wafers so as to minimize the time required for processing all the plurality of wafers in a plurality of processing steps, and determining a transport schedule including a transportation path for using the selected processing units. In the first step, the transportation schedule including the transport path is constructed for at least a single wafer, by using the first processing unit selected excluding at least a single first processing unit from the plurality of first processing units. This operation method selects an optimal transportation schedule when the second step is rate-controlled.
H01L 21/677 - Appareils spécialement adaptés pour la manipulation des dispositifs à semi-conducteurs ou des dispositifs électriques à l'état solide pendant leur fabrication ou leur traitementAppareils spécialement adaptés pour la manipulation des plaquettes pendant la fabrication ou le traitement des dispositifs à semi-conducteurs ou des dispositifs électriques à l'état solide ou de leurs composants pour le transport, p. ex. entre différents postes de travail
B65G 49/07 - Systèmes transporteurs caractérisés par leur utilisation à des fins particulières, non prévus ailleurs pour des matériaux ou objets fragiles ou dommageables pour des plaquettes semi-conductrices
In this dry etching method using plasma, when etching an organic film, by alternately repeating a first step of shielding Ar ions and irradiating only oxygen radicals on the organic film of a sample, and a second step of irradiating noble gas ions on the organic film, it is possible to perform an etching process with good precision while suppressing variation in etching of the organic film. This makes it possible to suppress collapse of an LS pattern formed on a silicon substrate, etc.
Provided is a plasma treatment device comprising: a treatment chamber wherein a wafer 1 is treated using plasma; a high-frequency power source which supplies high-frequency electricity for generating the plasma; a sample stage 2 which is positioned in the treatment chamber and whereon the wafer 1 is mounted; and a DC power source 106 which is electrically connected to the sample stage 2 and which causes the sample stage 2 to generate an adsorptive power. The sample stage 2 comprises: a protrusion part 201a which adsorbs the wafer 1 by the adsorptive power; and a step part 201b which protrudes from the protrusion part 201a at the lower part of the protrusion part 201a. A ring 5, which can abut the lower surface of the wafer 1, is disposed on the outer side of the protrusion part 201a. When the wafer 1 is adsorbed on the upper surface of the protrusion part 201a of the sample stage 2, a space 7 defined by the wafer 1, the protrusion part 201a, and the ring 5 is sealed.
H01L 21/683 - Appareils spécialement adaptés pour la manipulation des dispositifs à semi-conducteurs ou des dispositifs électriques à l'état solide pendant leur fabrication ou leur traitementAppareils spécialement adaptés pour la manipulation des plaquettes pendant la fabrication ou le traitement des dispositifs à semi-conducteurs ou des dispositifs électriques à l'état solide ou de leurs composants pour le maintien ou la préhension
H01L 21/3065 - Gravure par plasmaGravure au moyen d'ions réactifs
77.
Defect classification device, inspection device, and inspection system
In order to prevent an erroneous determination of an on-film defect, the sensitivity of the post-inspection is reduced so that a film swelling due to a minute defect would not be detected. Classification is performed to determine whether a defect is at least one of an on-film defect and a film swelling, by performing a coordinate correction on the result of a post-inspection by an actual-defect fine alignment using the result of a pre-inspection performed with two-stage thresholds, and by checking defects against each other. In addition, classification is performed to determine whether a defect is at least one of an on-film defect and a film swelling by, during the post-inspection, preparing instruction data from information of the refractive index and thickness of a film formed on a wafer and comparing the instruction data with a signal intensity ratio of a detection system.
In film thickness/depth measurement of a wafer in processing during etching, because the detected light intensity amount fluctuates and the measurement accuracy of the film thickness/depth decreases due to fluctuations in light intensity of the light source and fluctuations in the air of the region through which the light passes, the total light intensity or average light intensity at a given frequency is calculated from the spectroscopic spectrum measured at each time during etching processing; a present-time estimated total light intensity or estimated average light intensity, estimated using the total light intensity or average light intensity measured in the past prior to the present time is calculated; a change ratio is calculated, which is the ratio of the present-time total light intensity and estimated total light intensity, or the ratio of the average light intensity and the estimated average light intensity; the light intensity at each for wavelength at the present time is corrected using the calculated change ratio; and film thickness/depth measurement is carried out using the corrected light intensity at each wavelength.
The present invention provides a charged particle beam apparatus capable of efficiently reducing the effect of a residual magnetic field when SEM observation is performed. The charged particle beam apparatus according to the present invention includes a first mode for passing a direct current to a second coil after turning off a first coil, and a second mode for passing an alternating current to the second coil after turning off the first coil.
The present invention enables high-accuracy etching while also curbing and reducing surface roughness on a transition metal film. With regard to a transition metal film containing a transition metal element formed on a sample, the invention involves etching by: a first step for isotropically generating a transition metal oxide layer on the surface of the transition metal film while keeping the temperature of the sample at or below 100°C; a second step for raising the temperature of the sample to a predetermined temperature between 150°C and 250°C while supplying a complexation gas to the transition metal oxide layer; a third step for removing, by sublimating, a reactant generated by a reaction between the complexation gas and the transition metal oxide formed in the first step, while keeping the temperature of the sample at 150°C to 250°C; and a fourth step for cooling the sample.
H01L 21/3065 - Gravure par plasmaGravure au moyen d'ions réactifs
H01L 21/3213 - Gravure physique ou chimique des couches, p. ex. pour produire une couche avec une configuration donnée à partir d'une couche étendue déposée au préalable
H01L 21/768 - Fixation d'interconnexions servant à conduire le courant entre des composants distincts à l'intérieur du dispositif
81.
Apparatus, method for determining state of sample, and analysis system
A state of a sample surface is accurately determined without lowering analysis efficiency. There is provided an apparatus for determining a state of a sample to be analyzed contained in a container, in which the apparatus acquires an image of the sample, analyzes a position and a size of an object to be detected with respect to a detection range set in the image by using the image of the sample, and determines the state of the sample based on a result of the analysis.
The present invention realizes a composite charged particle beam apparatus capable of suppressing a leakage magnetic field from a pole piece forming an objective lens of an SEM with a simple structure. The charged particle beam apparatus according to the present invention obtains an ion beam observation image while passing a current to a first coil constituting the objective lens, and performs an operation of reducing the image shift by passing a current to a second coil with a plurality of current values, and determines a current to be passed to the second coil based on a difference between the operations.
NATIONAL UNIVERSITY CORPORATION SAITAMA UNIVERSITY (Japon)
HITACHI HIGH-TECH SCIENCE CORPORATION (Japon)
Inventeur(s)
Shibukawa, Masami
Abrégé
The present invention provides a highly versatile method for amino acid analysis, the method enabling separation and analysis of amino acids in a sample with high precision in a shorter time. This method is a method for amino acid analysis, the method including a step of allowing a sample containing a plurality of amino acids to flow together with an eluent 2 through a separation column 4 packed with a cation exchange resin, thereby separating the amino acids, and a step of detecting the separated amino acids, wherein the eluent 2 is an eluent containing a divalent or higher inorganic acid, a cation source, and water, and having a pH of 5.0 or lower, and the sample is allowed to flow through the separation column 4 heated by applying a temperature gradient including a temperature region of 100° C. or higher.
a light guide. The light guide has an incident surface configured to incident a light from the scintillator, an emission surface configured to emit a light incident from the incident surface, and a first surface configured to guide the light incident from the incident surface to a side of the emission surface. The light guide has a bent portion. The bent portion has a second surface configured to guide the light to the side of the emission surface in regions excluding a region between the incident surface and the emission surface.
In order to enable a wafer to be heated uniformly and to enable processing throughput to be increased, this sample processing method of processing a sample repeats, a plurality of times, processing steps that include: an adsorption step of forming a layer of a reactant on the surface of a sample placed on a sample stage inside a processing chamber that is connected to a plasma generating chamber, with plasma being generated by a plasma generating means inside the plasma generating chamber into which processing gas has been introduced; a detaching step of heating the sample by a heating lamp disposed outside a sample chamber and a heater installed inside the sample stage to vaporize the layer of the reactant to detach the layer of the reactant from the surface of the sample; and a cooling step of cooling the sample heated in the detaching step, wherein in the adsorption step, the heating lamp and heater are feedforward controlled by a control unit to set the sample to a first temperature state, and in the detaching step, the heating lamp and heater are controlled by the control unit such that when the sample is heated, the heater is feedback controlled to set the sample to a second temperature state.
A method for treating a film structure comprising an underlayer film disposed in advance on a sample to be treated, and an overlayer film of the treatment object disposed on the underlayer film, in order to achieve a configuration with which it is possible to remove a reaction layer so that roughness is not generated on a surface other than the layer to be etched due to adhered/deposited radicals on the surface other than the layer to be etched, in a case in which the radicals are adsorbed on the surface of the layer to be etched, a reaction layer is formed, and the reaction layer is removed, wherein the film structure is treated by repeating: an adsorption step in which activated particles are supplied into a treatment chamber, the activated particles are adsorbed on the surface of the overlayer film to create a compound with the material of the overlayer film, and a reaction product layer is formed; a removal step in which plasma formed by supplying oxygen into the treatment chamber is used to remove deposits including particles that adhered to the surface of the underlayer film, among the activated particles supplied into the treatment chamber; and a desorption step in which a sample to be treated, which has passed through the adsorption step and the removal step, is heated, and the reaction product layer on the overlayer film is desorbed and removed.
The present disclosure pertains to a method, a system, and a computer-readable medium for highly precisely measuring the depth of a recess formed in a sample even when, inter alia, the material or pattern density of the sample differs. In order to achieve the purpose described above, there are proposed a method, a measurement system, and a non-temporary computer-readable medium for storing program commands that can be executed by a computer system, the method, system, and medium involving: using a measurement tool to acquire an image or a luminance distribution of a region including a recess formed in a sample; extracting a first characteristic of the interior of the recess, and a second characteristic pertaining to the dimensions or area of the recess, from the acquired image or luminance distribution; and inputting the extracted first characteristic and second characteristic to a model that indicates the relationship between the first characteristic, the second characteristic, and a depth index value of the recess to thereby derive the depth index value of the recess.
G01B 15/00 - Dispositions pour la mesure caractérisées par l'utilisation d'ondes électromagnétiques ou de radiations de particules, p. ex. par l'utilisation de micro-ondes, de rayons X, de rayons gamma ou d'électrons
H01J 37/22 - Dispositifs optiques ou photographiques associés au tube
H01L 21/66 - Test ou mesure durant la fabrication ou le traitement
Provided is an automated analyzer comprising an ultrasonic cleaner capable of obtaining a consistent cleaning effect regardless of the operating temperature environment. This automated analyzer comprises: a dispensing mechanism having a nozzle for dispensing a sample or reagent; an ultrasonic cleaner 26 for cleaning the nozzle; and a control unit 28. The ultrasonic cleaner comprises: a cleaning tank 206; an ultrasonic vibrator 205; and a vibration head 209 that extends from the ultrasonic vibrator to the cleaning tank and has a distal end part that is inserted into the cleaning tank. The control unit inserts the nozzle into the cleaning tank and carries out a heating operation for heating the ultrasonic vibrator by driving the ultrasonic vibrator according to a driving condition different from that for a cleaning operation for cleaning the nozzle by driving the ultrasonic vibrator.
G01N 35/10 - Dispositifs pour transférer les échantillons vers, dans ou à partir de l'appareil d'analyse, p. ex. dispositifs d'aspiration, dispositifs d'injection
G01N 35/00 - Analyse automatique non limitée à des procédés ou à des matériaux spécifiés dans un seul des groupes Manipulation de matériaux à cet effet
The present invention addresses the problem of improving analysis performance of an electrophoresis device. In order to resolve the problem, this electrophoresis device is provided with: a capillary array provided with capillaries, a capillary head that binds one end of the capillaries, an electrode holder that holds an electrode provided at the other end of the capillaries, and a detecting unit provided to the capillaries; a first heating unit for heating the capillaries; and an irradiation detecting unit that irradiates the detecting unit with light and detects fluorescent light generated by a fluorescence labelling sample inside the capillaries, wherein the electrophoreses device is characterized by having a second heating unit for heating the detecting unit.
This automated analyzer comprises: a sample disk for mounting sample containers accommodating samples; a sample disk control unit for controlling the rotation of the sample disk; a sample dispensing probe for sucking the sample out of a sample container that has arrived at a prescribed suction position as a result of the rotation of the sample disk; a photometer for carrying out automatic biochemical analysis; a blood coagulation time detection unit for carrying out blood coagulation time analysis; a light-blocking cover that covers the photometer and blood coagulation time detection unit; and a sample information output unit for outputting sample information. The sample information output unit acquires analysis information indicating the analysis state of the mounted samples and position information indicating the positions of the samples as sample disk monitor information 401 and displays the analysis information, the position information, and an image 402 showing the light-blocking cover on the imaging unit so as to overlap.
G01N 21/17 - Systèmes dans lesquels la lumière incidente est modifiée suivant les propriétés du matériau examiné
G01N 33/86 - Analyse chimique de matériau biologique, p. ex. de sang ou d'urineTest par des méthodes faisant intervenir la formation de liaisons biospécifiques par ligandsTest immunologique faisant intervenir le temps de coagulation du sang
An charged particle beam apparatus includes: a gas introduction chamber to which raw gas is introduced; a plasma generation chamber connected to the gas introduction chamber; a coil wound around an outer circumference of the plasma generation chamber and receiving a high-frequency power; an extraction electrode applying an extraction voltage to plasma discharged from a plasma aperture at an outlet of the plasma generation chamber; an ampere meter measuring a magnitude of a plasma current caused by the plasma moved out of the plasma aperture; an extraction voltage calculator calculating, based on variation in the magnitude of the plasma current measured by the ampere meter with respect to variation in the extraction voltage, an extraction voltage set value; and a controller controlling the extraction voltage based on the extraction voltage set value calculated by the extraction voltage calculator.
Provided are a charged particle beam device and a detector which enable non-invasive observation of a biochemical sample, without staining or immobilization, with a simple and high observation throughput. The charged particle beam device comprises: an electron optical system; a stage (64); a sample chamber (100) having a first insulating layer (110) that holds a sample (200) and is in contact with the sample (200), and a conductive layer (120) formed on the first insulating layer (110); signal detection circuits (20), (50) that are connected to the conductive layer (120) and detect a current flowing in the conductive layer (120); and a main control unit (14) that controls the electron optical system and the stage (64). The main control unit (14) irradiates the conductive layer (120) of the sample chamber (100) placed on the stage (64) with an electron beam (12) from the electron optical system, and detection signals from the signal detection circuits (20), (50) are input.
Disclosed are a charged particle beam apparatus and a sample processing observation method, the method including: a sample piece formation process in which a sample is irradiated with a focused ion beam such that a sample piece is cut out from the sample; a cross-section processing process in which the sample piece support holds the sample piece and a cross section thereof is irradiated with the ion beam to process the cross section; a sample piece approach movement process in which the sample piece support holds the sample piece and the sample piece is moved to a position that is closer to an electron beam column than an intersection point of beam optical axes of the ion beam and an electron beam is; and a SEM image acquisition process in which the cross section is irradiated with the electron beam to acquire the SEM image of the cross section.
Several kV of applied voltage are required to take a biological sample and, as a result, EWOD electrodes, etc., are damaged and electrodes cannot be reused for droplet movement. The present invention addresses the issue of providing: a biochemical cartridge that can be used a plurality of times for taking biological samples using a capillary array, etc.; and a biochemical analysis device using the biochemical cartridge. In order to solve this issue, this biochemical cartridge is characterized by having provided therein: a channel through which samples are transported; a plurality of electrodes that are arranged upon the channel, along the direction that samples are transported, and are provided for transporting the samples; and openings facing the plurality of electrodes arranged on the downstream side of the channel.
G01N 35/08 - Analyse automatique non limitée à des procédés ou à des matériaux spécifiés dans un seul des groupes Manipulation de matériaux à cet effet en utilisant un courant d'échantillons discrets circulant dans une canalisation, p. ex. analyse à injection dans un écoulement
G01N 1/00 - ÉchantillonnagePréparation des éprouvettes pour la recherche
G01N 37/00 - Détails non couverts par les autres groupes de la présente sous-classe
95.
BIOCHEMICAL CARTRIDGE AND BIOCHEMICAL ANALYSIS DEVICE
In order to enable a biological sample to be taken at a position at a prescribed distance from an EWOD electrode, this biochemical cartridge comprises: a droplet channel having a plurality of EWOD electrodes that transport sample droplets being droplets including the biological sample, said EWOD electrodes being arranged in a direction in which the sample droplets are transported; and a sample intake unit at a position at which the biological sample in the sample droplet is taken in, said position being at a prescribed distance from an EWOD electrode at an end of the droplet channel. The biochemical cartridge is characterized by: the sample intake unit being at a position that is lower than the droplet channel having the EWOD electrode at the end thereof, when the biological sample is taken; and there being a smooth continuation between the droplet channel and the sample intake unit.
G01N 35/08 - Analyse automatique non limitée à des procédés ou à des matériaux spécifiés dans un seul des groupes Manipulation de matériaux à cet effet en utilisant un courant d'échantillons discrets circulant dans une canalisation, p. ex. analyse à injection dans un écoulement
G01N 1/00 - ÉchantillonnagePréparation des éprouvettes pour la recherche
G01N 37/00 - Détails non couverts par les autres groupes de la présente sous-classe
The present invention implements an alignment system which has high reproducibility of position information at the time of re-observation, and enables a user to efficiently and easily re-observe an area of interest. In the alignment system which enables correlated observation between an image capturing device (104) and a charged particle ray device (100), a plurality of position adjustment points are set on a sample carrier in a state where the samples are placed. An alignment control unit (153) obtains a conversion matrix for converting a coordinate system of the image capturing device and a coordinate system of the charged particle ray device, on the basis of position information and magnification for each of the plurality of position adjustment points when a first image is captured by the image capturing device and position information and magnification for each of the plurality of position adjustment points when observation is performed by the charged particle ray device, and converts a field of view designated for the first image to field-of-view information about the charged particle ray device by using the conversion matrix.
A minimum peak is determined from analysis results, a correction wavelength at which an S/N ratio of the minimum peak is greatest is determined, and the determined correction wavelength is used to execute correction of the minimum peak. A plurality of detector output value correction method are registered in a processor, correction method is selected from default correction method or from among a plurality of preset correction methods according to an object to perform correction.
G01N 21/31 - CouleurPropriétés spectrales, c.-à-d. comparaison de l'effet du matériau sur la lumière pour plusieurs longueurs d'ondes ou plusieurs bandes de longueurs d'ondes différentes en recherchant l'effet relatif du matériau pour les longueurs d'ondes caractéristiques d'éléments ou de molécules spécifiques, p. ex. spectrométrie d'absorption atomique
(3) A solution that contains a salt with a concentration of 1 mol/L or more and a saturation concentration or less and is cooled and maintained to a temperature equal to or higher than a solidification point and lower than 25° C.
Disclosed is a mass analysis apparatus and method, wherein the precision of detection of a first material including a second material is improved, without enlarging the apparatus, and the measurement time is reduced. The mass analysis apparatus for analyzing a sample containing a first material including an organic compound and at least one second material including an organic compound and having a mass spectrum peak overlapping that of the first material includes a peak correction unit, wherein, when an intensity ratio (peak B)/(peak A) of peak A, not overlapping that of the first material, and peak B, overlapping that of the first material, is a correction coefficient (W), an intensity of a net peak D of the mass spectrum of the first material is calculated by subtracting W×(intensity of peak A) from an intensity of a peak C of the mass spectrum of the first material in the sample.
A control system for this charged particle beam system obtains a first factor by performing a multiresolution analysis using a wavelet transformation or a discrete wavelet transformation on at least a part of an image or a signal obtained by a charged particle beam device. The control system obtains a second factor by performing any of maximum value calculation, numerical calculation corresponding to a designated order among the orders of magnitude, fitting to a histogram, average value calculation, and summation calculation on at least a part of the first factor or the absolute value of the first factor.
