Abrégé

The present application relates to a system, apparatus and method for feedback-controlling a sensor array. The apparatus includes an imaging sensor unit comprising: a sensor module including a plurality of photosensors: a memory module coupled to the sensor module, the memory module configured to receive a sensor output from the sensor module: a local control module coupled to the sensor module, the local control module configured to: receive a local feedback signal from the sensor module: receive a global feedback signal; and use the local feedback signal and the global feedback signal to control the memory module to store the sensor output.

Classes IPC  ?

• H04N 25/40 - Extraction de données de pixels provenant d'un capteur d'images en agissant sur les circuits de balayage, p. ex. en modifiant le nombre de pixels ayant été échantillonnés ou à échantillonner
• H04N 25/10 - Circuits de capteurs d'images à l'état solide [capteurs SSIS]Leur commande pour transformer les différentes longueurs d'onde en signaux d'image
• H04N 25/20 - Circuits de capteurs d'images à l'état solide [capteurs SSIS]Leur commande pour transformer uniquement le rayonnement infrarouge en signaux d'image

Abrégé

A solid-state gas sensor (10) includes a semiconductor chip (12), which in turn includes an element sensitive to the presence of one or more gaseous species. The sensor includes a support (13) on which the semiconductor chip is mounted. The support (13) has electrical connection pads (14A, 14B, 14C, 14D) connected to respective electrodes of the semiconductor chip and accessible from outside the sensor via respective electrical connection terminals (16A, 16B, 16C, 16D). The sensor includes a closure element (18) mounted on the support (13) to define a sensing chamber at the upper surface of the semiconductor chip (12). The closure element (18) has one or more through holes to allow gas exchange between the sensing chamber and the external environment. The sensor includes a selective membrane arranged internally in the closure element (18) between the upper surface of the semiconductor chip (12) and the through holes. The selective membrane includes cellulose nanocrystals.

Classes IPC  ?

• G01N 27/12 - Recherche ou analyse des matériaux par l'emploi de moyens électriques, électrochimiques ou magnétiques en recherchant l'impédance en recherchant la résistance d'un corps solide dépendant de l'absorption d'un fluideRecherche ou analyse des matériaux par l'emploi de moyens électriques, électrochimiques ou magnétiques en recherchant l'impédance en recherchant la résistance d'un corps solide dépendant de la réaction avec un fluide
• G01N 33/00 - Recherche ou analyse des matériaux par des méthodes spécifiques non couvertes par les groupes

Abrégé

A manufacturing method of a diode radiation sensor having a charge multiplication diode includes providing a substrate that is made of a semiconductor material and has a front surface and a rear surface; making, near the front surface, a first layer of a semiconductor material having a first type of doping; and making, deep in the substrate, a second layer of a semiconductor material having a second type of doping that is electrically opposite to the first type. The second layer is obtained by inserting into the substrate a first predetermined amount of a first type of dopant and a second predetermined amount of a second type of dopant.

Classes IPC  ?

• H10F 71/00 - Fabrication ou traitement des dispositifs couverts par la présente sous-classe
• H10F 30/00 - Dispositifs individuels à semi-conducteurs sensibles au rayonnement dans lesquels le rayonnement commande le flux de courant à travers les dispositifs, p. ex. photodétecteurs

Abrégé

A diode radiation sensor having charge multiplication diodes and comprising a substrate with a front and a rear surface; a first layer of a semiconductor material doped with a first type of doping and arranged on the front surface of the substrate; a second layer of a semiconductor material doped with a second type of doping of electrically opposite sign to the first type and arranged to create a high electric field region between the first and the second layer; a third layer of a semiconductor material doped with a the second type of doping; a first isolation region interposed between a lateral edge of a charge multiplication diode and the first and the second layer of the semiconductor materials and extending into the substrate from the front surface to the third layer so as to create a working area electrically separated from the first and the second layer.

Classes IPC  ?

• H01L 31/107 - Dispositifs sensibles au rayonnement infrarouge, visible ou ultraviolet caractérisés par une seule barrière de potentiel ou de surface la barrière de potentiel fonctionnant en régime d'avalanche, p.ex. photodiode à avalanche
• H01L 31/02 - Dispositifs à semi-conducteurs sensibles aux rayons infrarouges, à la lumière, au rayonnement électromagnétique d'ondes plus courtes, ou au rayonnement corpusculaire, et spécialement adaptés, soit comme convertisseurs de l'énergie dudit rayonnement e; Procédés ou appareils spécialement adaptés à la fabrication ou au traitement de ces dispositifs ou de leurs parties constitutives; Leurs détails - Détails

Abrégé

A diode radiation sensor includes a substrate; a first layer of semiconductor material doped with a doping of a first type and provided on the front surface of the substrate; a second layer of semiconductor material doped with a doping of a second type of electrically opposite sign to the first type and provided at a first depth in the substrate, the first and the second layer forming a high electric field region therebetween; a third layer of semiconductor material doped with a doping of the second type and provided at a second depth in the substrate greater than the first depth; and a first isolation region provided peripherally to the substrate and extending deep in the substrate up to an intermediate area between the front and the rear surface of the substrate. A passivation layer is interposed between the lateral wall of the first isolation region and the substrate.

Classes IPC  ?

• H01L 31/107 - Dispositifs sensibles au rayonnement infrarouge, visible ou ultraviolet caractérisés par une seule barrière de potentiel ou de surface la barrière de potentiel fonctionnant en régime d'avalanche, p.ex. photodiode à avalanche
• G01T 1/24 - Mesure de l'intensité de radiation avec des détecteurs à semi-conducteurs
• H01L 31/18 - Procédés ou appareils spécialement adaptés à la fabrication ou au traitement de ces dispositifs ou de leurs parties constitutives

Abrégé

bgbgi) acquired in the first acquisition step.

Classes IPC  ?

• G01S 7/4861 - Circuits pour la détection, d'échantillonnage, d'intégration ou de lecture des circuits
• G01S 7/4863 - Réseaux des détecteurs, p. ex. portes de transfert de charge
• G01S 7/487 - Extraction des signaux d'écho désirés
• G01S 17/18 - Systèmes déterminant les données relatives à la position d'une cible pour mesurer la distance uniquement utilisant la transmission d'ondes à modulation d'impulsion interrompues dans lesquels des fenêtres en distance sont utilisées
• G01S 17/894 - Imagerie 3D avec mesure simultanée du temps de vol sur une matrice 2D de pixels récepteurs, p. ex. caméras à temps de vol ou lidar flash

Abrégé

The present application relates to a system, apparatus and method for feedback-controlling a sensor array. The apparatus includes an imaging sensor unit comprising: a sensor module including a plurality of photosensors; a memory module coupled to the sensor module, the memory module configured to receive a sensor output from the sensor module; a local control module coupled to the sensor module, the local control module configured to: receive a local feedback signal from the sensor module; receive a global feedback signal; and use the local feedback signal and the global feedback signal to control the memory module to store the sensor output.

Classes IPC  ?

• H04N 5/353 - Réglage du temps d'intégration
• H04N 5/3745 - Capteurs adressés, p.ex. capteurs MOS ou CMOS ayant des composants supplémentaires incorporés au sein d'un pixel ou connectés à un groupe de pixels au sein d'une matrice de capteurs, p.ex. mémoires, convertisseurs A/N, amplificateurs de pixels, circuits communs ou composants communs

Abrégé

An execution method of a diode radiation sensor (1) having charge multiplication diodes (2), the method comprising the following steps: providing a substrate (3) made of semiconductor material, having a front surface (4) and a rear surface (5); making, near the front surface (4), a first layer (6) of semiconductor material doped with a first predetermined amount of a first type of dopant; making, deep in the substrate (3), a second layer (8) of semiconductor material doped with a second predetermined amount of a second type of dopant electrically opposite the first type of dopant. The method comprises, before the steps of making the first layer (6) and the second layer (8), a step of making in the substrate (3) a third layer (10) of semiconductor material enriched with carbon so that it contains a predetermined amount of said carbon.

Classes IPC  ?

• H01L 31/18 - Procédés ou appareils spécialement adaptés à la fabrication ou au traitement de ces dispositifs ou de leurs parties constitutives

Abrégé

An execution method of a diode radiation sensor (1) having a charge multiplication diodes (2), the method comprising the following steps: providing a substrate (3) made of semiconductor material, having a front surface (4) and a rear surface (4b); making, near the front surface (4), a first layer (5) of semiconductor material doped with a first predetermined amount of a first type of dopant; making, deep in the substrate (3), a second layer (8) of semiconductor material doped with a second predetermined amount of a second type of dopant electrically opposite the first type. The second layer (8) is obtained by inserting into the substrate (3) a first predetermined amount of a first type of dopant and a second predetermined amount of a second type of dopant.

Classes IPC  ?

• H01L 31/18 - Procédés ou appareils spécialement adaptés à la fabrication ou au traitement de ces dispositifs ou de leurs parties constitutives

Abrégé

Solid-state radiation sensor (1 ) for the detection of radiations, in particular of particles, of the type comprising at least one pixel (3) sensitive to such radiations. This pixel, in particular, comprises a first detection transistor (4) of the n-channel MOSFET type and a second detection transistor (8) of the p-channel MOSFET type. Said radiation sensor (1 ) further comprises a logic unit (12) configured to perform in sequence and periodically: - a pre-charging step (200) of said first detection transistor (4) and second detection transistor (8); - a step of exposure (201 ) of the pixel (3), making the first detection transistor (4) and the second detection transistor (8) float; - a step (202) of reading the state of the first detection transistor (4) and of the second detection transistor (8).

Classes IPC  ?

• G01T 1/24 - Mesure de l'intensité de radiation avec des détecteurs à semi-conducteurs
• G01T 1/17 - Dispositions de circuits non adaptés à un type particulier de détecteur
• G01T 1/20 - Mesure de l'intensité de radiation avec des détecteurs à scintillation
• H01J 37/244 - DétecteursComposants ou circuits associés
• G01T 1/164 - Scintigraphie
• G01T 1/29 - Mesure effectuée sur des faisceaux de radiations, p. ex. sur la position ou la section du faisceauMesure de la distribution spatiale de radiations
• H01L 27/146 - Structures de capteurs d'images
• G01T 3/08 - Mesure de flux de neutrons avec des détecteurs à semi-conducteurs
• H04N 5/374 - Capteurs adressés, p.ex. capteurs MOS ou CMOS
• G01T 1/02 - Dosimètres

Abrégé

Rapid test device for the detection of SARS-CoV-2 viruses and for the relative antibody production comprising a substrate of the lateral flow immunochromatographic assay divided into 5 regions: a first reception area to receive the biological sample ("Sample Deposition"); a second area where the first reaction takes place between an analyte and the molecule used for its specific identification ("Conjugation pad"); a third area where the signal amplification uses the addition of the gold nanoparticles ("Signal amplification"); a fourth test area ("Test line") and a fifth control area ("Control Line") in which a second and third immunoreaction takes place, providing a visual reading of the test result by means of a window and two results visible by a colored strip. The "sample deposition" area comprises a filter having porosity of about 200 nm - 1 µm.

Classes IPC  ?

• G01N 33/543 - Tests immunologiquesTests faisant intervenir la formation de liaisons biospécifiquesMatériaux à cet effet avec un support insoluble pour l'immobilisation de composés immunochimiques
• G01N 33/569 - Tests immunologiquesTests faisant intervenir la formation de liaisons biospécifiquesMatériaux à cet effet pour micro-organismes, p. ex. protozoaires, bactéries, virus

Abrégé

A diode radiation sensor having one or more charge multiplication diodes (2) and comprising: a substrate (3; 303) having a front surface (4) and a rear surface (5); a first layer of semiconductor material (8) doped with a doping of a first type and made on said front surface (4); a second layer of semiconductor material (9; 109; 209; 309) doped with a doping of a second type of electrically opposite sign to the first type and made to a first depth so as to make between the first layer (8) and the second layer (9; 109; 209; 309) a high electric field region (10); an isolation region (15; 315) made peripherally to the substrate (3; 303) and extending in depth to an intermediate area between the front surface (4) and the rear surface (5); a locking element (18; 118; 218; 318; 418) made in depth in the substrate (3; 303) to electrically isolate the first layer (8) and to hinder charge collection paths between the substrate (3; 303) and the front surface (4) extending laterally to the second layer (9; 109; 209; 309).

Classes IPC  ?

• H01L 31/107 - Dispositifs sensibles au rayonnement infrarouge, visible ou ultraviolet caractérisés par une seule barrière de potentiel ou de surface la barrière de potentiel fonctionnant en régime d'avalanche, p.ex. photodiode à avalanche
• H01L 31/115 - Dispositifs sensibles au rayonnement d'ondes très courtes, p.ex. rayons X, rayons gamma ou rayonnement corpusculaire

Abrégé

A diode radiation sensor comprising: a substrate (3; 103; 203; 303); a first layer of semiconductor material (8) doped with a doping of a first type and made on the front surface (4) of the substrate (3; 103; 203; 303); a second layer of semiconductor material (9) doped with a doping of a second type of electrically opposite sign to the first type and made at a first depth in the substrate (3; 103; 203; 303), between the first layer (8) and the second layer (9) forming a high electric field region (10); a third layer of semiconductor material (12) doped with a doping of the second type and made at a second depth in the substrate (3; 103; 203; 303) greater than the first depth; a first isolation region (15; 315) made peripherally to the substrate (3; 103; 203; 303) and extending deep in the substrate (3; 103; 203; 303) up to an intermediate area between the front surface (4) and the rear surface (5; 105; 205) of the substrate (3; 103; 203; 303). A passivation layer (18; 118; 218; 318) is interposed between the lateral wall of the first isolation region (8) and the substrate (3; 103; 203; 303).

Classes IPC  ?

• H01L 31/107 - Dispositifs sensibles au rayonnement infrarouge, visible ou ultraviolet caractérisés par une seule barrière de potentiel ou de surface la barrière de potentiel fonctionnant en régime d'avalanche, p.ex. photodiode à avalanche

Abrégé

A diode radiation sensor having multiple charge multiplication diodes (2), and comprising: a substrate (3) having a front surface (4) and a rear surface (5); a first layer of semiconductor material (8) doped with a doping of a first type and made on the front surface (4) of the substrate (3); a second layer of semiconductor material (9) doped with a doping of a second type of electrically opposite sign to the first type and made so as to create between the first layer (8) and the second layer (9) a high electric field region (10); a third layer of semiconductor material (12) doped with a doping of the second type; a first isolation region (18) interposed between a lateral edge (15b) of the charge multiplication diode (2) and the first (8) and the second layer of semiconductor material (9) and extending in depth in the substrate (3) from the front surface (4) to the third layer of semiconductor material (12) so as to make a working area (19; 119) electrically separated from the first (8) and the second layer of semiconductor material (9).

Classes IPC  ?

• H01L 31/107 - Dispositifs sensibles au rayonnement infrarouge, visible ou ultraviolet caractérisés par une seule barrière de potentiel ou de surface la barrière de potentiel fonctionnant en régime d'avalanche, p.ex. photodiode à avalanche

Abrégé

A solid-state image sensor for detecting one or more photons includes a plurality of pixels sensitive to such photons, each of the pixels having a logic unit and an avalanche photodiode operatively connected to the logic unit, the logic unit being configured to provide an electrical signal different from the electrical signals provided by the logic units of the remaining pixels. The logic unit of each of the pixels is operatively connected to the logic unit of an adjacent pixel, such logic unit outputting the electrical signal when the avalanche photodiode belonging to the same pixel and the avalanche photodiode belonging to such adjacent pixel each detect at least one photon within a time window.

Classes IPC  ?

• H01L 27/146 - Structures de capteurs d'images
• G01S 17/894 - Imagerie 3D avec mesure simultanée du temps de vol sur une matrice 2D de pixels récepteurs, p. ex. caméras à temps de vol ou lidar flash
• H01L 31/107 - Dispositifs sensibles au rayonnement infrarouge, visible ou ultraviolet caractérisés par une seule barrière de potentiel ou de surface la barrière de potentiel fonctionnant en régime d'avalanche, p.ex. photodiode à avalanche

Abrégé

A label (100) suitable for certifying the authenticity of an article, which label (100) comprises: - a support (S) intended to be applied to the article to be certified, - a substrate (L) configured to adhere reversibly to said support (S), - an adhesive layer (2), interposed between said support (S) and said substrate (L), configured to realize a detachment irreversible of said support (S) from the article after the application, wherein said support (S) bears an authentication code (20) identifying the article and said adhesive layer (2) comprises a security element (10), the authentication code (20) and the security element (10) being reciprocally positioned so as to define an overlapping region (15), wherein said security element (10) comprises a reactive optical component (10') detectable at an inspection area () of said overlapping region (15) and wherein said adhesive layer (2) is configured so that said support (S), when detaching from the article, is lack of said reactive optical component (10').

Classes IPC  ?

• G06K 19/06 - Supports d'enregistrement pour utilisation avec des machines et avec au moins une partie prévue pour supporter des marques numériques caractérisés par le genre de marque numérique, p. ex. forme, nature, code
• B42D 25/36 - Caractéristiques d’identification ou de sécurité, p. ex. pour empêcher la falsification comprenant des matériaux spéciaux
• G06K 19/08 - Supports d'enregistrement pour utilisation avec des machines et avec au moins une partie prévue pour supporter des marques numériques caractérisés par le genre de marque numérique, p. ex. forme, nature, code utilisant des marquages de différentes sortes sur le même support d'enregistrement, p. ex. un marquage étant lu optiquement et l'autre par des moyens magnétiques
• G09F 3/03 - Formes ou structures de sceaux de sécurité
• B42D 25/47 - Fabrication associant plusieurs couches en utilisant des substances chimiques ou adhésives en utilisant des substances adhésives

Abrégé

A power supply circuit module (1) for a TDC (Time to Digital Converter) (20) comprising a first input (2) for receiving a control signal (Vref), a second input (3) for receiving a power supply voltage (Vdd), an output (4) configured to be connected to the power supply input (21) of said TDC (20), an active main power supply device (5) configured to receive the control signal (Vref) at the input and to contribute on the value of the power supply voltage resulting at an output (4) by a voltage value lower than a first predefined percentage (PP1) with respect to said nominal power supply voltage (Vnom) and a number N of active secondary power supply devices (6) each being configured to contribute on the value of the power supply voltage resulting at the output (4) by a percentage different from the remaining active secondary power supply devices (6) and all the active secondary power supply devices (6) being configured as a whole to contribute on the value of said power supply voltage resulting at said output (4) by a second predefined percentage (PP2) of the value of said nominal power supply voltage (Vnom) variable between zero and substantially twice said first pre-established percentage (PP1).

Classes IPC  ?

• G04F 10/00 - Appareils pour mesurer des intervalles de temps inconnus par des moyens électriques

Abrégé

TT).

Classes IPC  ?

• G01S 7/481 - Caractéristiques de structure, p. ex. agencements d'éléments optiques
• G01S 7/4863 - Réseaux des détecteurs, p. ex. portes de transfert de charge
• G01S 7/487 - Extraction des signaux d'écho désirés
• G01S 7/48 - Détails des systèmes correspondant aux groupes , , de systèmes selon le groupe
• G01S 17/08 - Systèmes déterminant les données relatives à la position d'une cible pour mesurer la distance uniquement

Abrégé

The present invention relates to a matrix of sensors for detecting pressure on wide areas, comprising first and second conductive layers (20, 40) and a polymeric active matrix (30), the polymeric matrix comprising a semi-conducting polymer (31) and a piezoelectric polymer (32), and a process for the manufacturing thereof, useful to detect pressure data and transduce them into electric current signals, for applications in biomedical, sensor fields and in displays.

Classes IPC  ?

• H01L 41/113 - Eléments piézo-électriques ou électrostrictifs à entrée mécanique et sortie électrique
• H01L 41/193 - Compositions macromoléculaires
• G01K 7/34 - Mesure de la température basée sur l'utilisation d'éléments électriques ou magnétiques directement sensibles à la chaleur utilisant des éléments capacitifs
• G01L 9/00 - Mesure de la pression permanente, ou quasi permanente d’un fluide ou d’un matériau solide fluent par des éléments électriques ou magnétiques sensibles à la pressionTransmission ou indication par des moyens électriques ou magnétiques du déplacement des éléments mécaniques sensibles à la pression, utilisés pour mesurer la pression permanente ou quasi permanente d’un fluide ou d’un matériau solide fluent
• G01R 27/02 - Mesure de résistances, de réactances, d'impédances réelles ou complexes, ou autres caractéristiques bipolaires qui en dérivent, p. ex. constante de temps
• H01L 41/45 - Matériaux organiques

Abrégé

Provided are a radiation detector and a radiation detection apparatus in which the efficiency of detecting radiation is enhanced by increasing a portion capable of detecting radiation. A radiation detector includes a semiconductor part having a plate-like shape, the semiconductor part being provided with a through hole penetrating the semiconductor part, one surface of the semiconductor part being an incident surface for radiation. The semiconductor part has a sensitive portion capable of detecting incident radiation, the sensitive portion including an inner edge of the incident surface.

Classes IPC  ?

• G01T 1/24 - Mesure de l'intensité de radiation avec des détecteurs à semi-conducteurs
• G01T 1/02 - Dosimètres
• H01J 37/244 - DétecteursComposants ou circuits associés
• H01L 31/0224 - Electrodes
• G01N 23/203 - Recherche ou analyse des matériaux par l'utilisation de rayonnement [ondes ou particules], p. ex. rayons X ou neutrons, non couvertes par les groupes , ou en utilisant la diffraction de la radiation par les matériaux, p. ex. pour rechercher la structure cristallineRecherche ou analyse des matériaux par l'utilisation de rayonnement [ondes ou particules], p. ex. rayons X ou neutrons, non couvertes par les groupes , ou en utilisant la diffusion de la radiation par les matériaux, p. ex. pour rechercher les matériaux non cristallinsRecherche ou analyse des matériaux par l'utilisation de rayonnement [ondes ou particules], p. ex. rayons X ou neutrons, non couvertes par les groupes , ou en utilisant la réflexion de la radiation par les matériaux en mesurant la rétrodiffusion
• A61B 6/00 - Appareils ou dispositifs pour le diagnostic par radiationsAppareils ou dispositifs pour le diagnostic par radiations combinés avec un équipement de thérapie par radiations
• G01N 23/207 - Diffractométrie, p. ex. en utilisant une sonde en position centrale et un ou plusieurs détecteurs déplaçables en positions circonférentielles
• H01L 27/146 - Structures de capteurs d'images
• H01L 27/14 - Dispositifs consistant en une pluralité de composants semi-conducteurs ou d'autres composants à l'état solide formés dans ou sur un substrat commun comprenant des composants semi-conducteurs sensibles aux rayons infrarouges, à la lumière, au rayonnement électromagnétique d'ondes plus courtes ou au rayonnement corpusculaire, et spécialement adaptés, soit comme convertisseurs de l'énergie dudit ra
• H01L 31/0352 - Dispositifs à semi-conducteurs sensibles aux rayons infrarouges, à la lumière, au rayonnement électromagnétique d'ondes plus courtes, ou au rayonnement corpusculaire, et spécialement adaptés, soit comme convertisseurs de l'énergie dudit rayonnement e; Procédés ou appareils spécialement adaptés à la fabrication ou au traitement de ces dispositifs ou de leurs parties constitutives; Leurs détails caractérisés par leurs corps semi-conducteurs caractérisés par leur forme ou par les formes, les dimensions relatives ou la disposition des régions semi-conductrices
• G01N 21/47 - Dispersion, c.-à-d. réflexion diffuse

Abrégé

Described herein is a sensor (1) for detection of biomolecules in a biological fluid via chemiluminescence reaction, said sensor comprising: - a microfluidic layer (2) defining a reaction volume (3), said reaction volume being in fluid communication with an inlet microchannel (4) for inlet of at least one fluid into said reaction volume and with an outlet microchannel (5) for discharge of at least one fluid from said reaction volume; - an optoelectronic layer (6) comprising at least one photodetector (7) for detection of electromagnetic radiation generated, in use, by a chemiluminescence reaction in said reaction volume (3); - a separation layer (8) set between said microfluidic layer (2) and said optoelectronic layer (6), said separation layer being at least partially transparent to electromagnetic radiation in a given range of wavelengths; and - a microstructured surface (9) facing into said reaction volume (3), said microstructured surface comprising a plurality of micro-pillars (12) preferably having an approximately cylindrical shape, said micro¬ pillars having a longitudinal dimension comprised between 50 pm and 400 pm and a transverse dimension comprised between 5 pm and 20 pm.

Classes IPC  ?

• G01N 21/76 - ChimioluminescenceBioluminescence
• B01L 3/00 - Récipients ou ustensiles pour laboratoires, p. ex. verrerie de laboratoireCompte-gouttes

Abrégé

A process for producing an anode for lithium-ion batteries, comprising the following steps: depositing by plasma-enhanced chemical vapor deposition (PECVD) an active material (1) directly onto a metal substrate (2) intended to form a current collector, the active material (1) consisting substantially of a germanium film, and subjecting the film (1) to anodic oxidation to make it porous or increase its porosity.

Classes IPC  ?

• H01M 4/04 - Procédés de fabrication en général
• H01M 4/13 - Électrodes pour accumulateurs à électrolyte non aqueux, p. ex. pour accumulateurs au lithiumLeurs procédés de fabrication
• H01M 4/134 - Électrodes à base de métaux, de Si ou d'alliages
• H01M 4/1395 - Procédés de fabrication d’électrodes à base de métaux, de Si ou d'alliages

Abrégé

A method for making the comparison between a continuous value analogue signal (S1 ) and a continuous value digital signal (S2), which provides the steps of: defining a ramp analogue signal (RAMP) having linearly variable value over time by periodically varying, for each time interval belonging to first predetermined time intervals (ck1), a first digital numerical value (cnt1) by a predetermined quantity and converting it into the ramp analogue signal (RAMP); simultaneously comparing, at each of the first predetermined time intervals (ck1), the value of the ramp analogue signal (RAMP) with the analogue signal (S1) and the first digital numerical value (cnt1) with the digital signal (S2); verifying at which of the first predetermined time intervals (ck1) the value of the ramp analogue signal (RAMP) equals the analogue signal (S1) and at which of the predetermined time intervals (ck1) the first digital numerical value (cnt1) equals the digital signal (S2); defining the time window (WIND) between the first equality and the second equality; increasing a second digital numerical value (cnt2) within the time window (WIND) for each time interval belonging to second predetermined time intervals (ck2).

Classes IPC  ?

• G01R 19/00 - Dispositions pour procéder aux mesures de courant ou de tension ou pour en indiquer l'existence ou le signe

Abrégé

A radiation detection element comprises: a semiconductor part generating an electric charge by entrance of radiation; a signal output electrode provided at the semiconductor part and outputting a signal caused by the electric charge; a potential gradient generation electrode provided at the semiconductor part, for applying voltage such that a potential gradient in which a potential varies toward the signal output electrode is generated inside the semiconductor part; a collection electrode provided at the semiconductor part, for collecting electric charges not derived from radiation; an insulating film provided on a side of the semiconductor part where the signal output electrode is located; and a conductive layer provided between the insulating film and a part of the semiconductor part, and having electric resistance lower than the electric resistance of the semiconductor part and higher than the electric resistance of the collection electrode. The conductive layer is located at a position where a distance from the signal output electrode is equal to or longer than a distance between the collection electrode and the signal output electrode.

Classes IPC  ?

• H01L 31/115 - Dispositifs sensibles au rayonnement d'ondes très courtes, p.ex. rayons X, rayons gamma ou rayonnement corpusculaire
• H01L 31/0224 - Electrodes
• G01T 1/24 - Mesure de l'intensité de radiation avec des détecteurs à semi-conducteurs
• H01L 31/08 - Dispositifs à semi-conducteurs sensibles aux rayons infrarouges, à la lumière, au rayonnement électromagnétique d'ondes plus courtes, ou au rayonnement corpusculaire, et spécialement adaptés, soit comme convertisseurs de l'énergie dudit rayonnement e; Procédés ou appareils spécialement adaptés à la fabrication ou au traitement de ces dispositifs ou de leurs parties constitutives; Leurs détails dans lesquels le rayonnement commande le flux de courant à travers le dispositif, p.ex. photo-résistances

Abrégé

Provided are: a radiation detector which has improved detection efficiency of radiation by being increased in the portion where radiation is able to be detected; and a radiation detection device. A radiation detector (1) according to the present invention comprises a plate-like semiconductor part (12), while being provided with a through hole (11) that penetrates through the semiconductor part (12); and one surface of the semiconductor part (12) serves as an incident surface (121) for radiation. The semiconductor part (12) has a sensitive portion (18) which is capable of detecting incident radiation; and the sensitive portion (18) includes an inner edge (122) of the incident surface (121).

Classes IPC  ?

• G01T 1/24 - Mesure de l'intensité de radiation avec des détecteurs à semi-conducteurs
• G01N 23/223 - Recherche ou analyse des matériaux par l'utilisation de rayonnement [ondes ou particules], p. ex. rayons X ou neutrons, non couvertes par les groupes , ou en mesurant l'émission secondaire de matériaux en irradiant l'échantillon avec des rayons X ou des rayons gamma et en mesurant la fluorescence X
• G01N 23/2251 - Recherche ou analyse des matériaux par l'utilisation de rayonnement [ondes ou particules], p. ex. rayons X ou neutrons, non couvertes par les groupes , ou en mesurant l'émission secondaire de matériaux en utilisant des microsondes électroniques ou ioniques en utilisant des faisceaux d’électrons incidents, p. ex. la microscopie électronique à balayage [SEM]
• H01J 37/244 - DétecteursComposants ou circuits associés
• H01L 31/08 - Dispositifs à semi-conducteurs sensibles aux rayons infrarouges, à la lumière, au rayonnement électromagnétique d'ondes plus courtes, ou au rayonnement corpusculaire, et spécialement adaptés, soit comme convertisseurs de l'énergie dudit rayonnement e; Procédés ou appareils spécialement adaptés à la fabrication ou au traitement de ces dispositifs ou de leurs parties constitutives; Leurs détails dans lesquels le rayonnement commande le flux de courant à travers le dispositif, p.ex. photo-résistances

Abrégé

Recent studies in computer vision have shown that, while practically invisible to a human observer, skin color changes due to blood flow can be captured on face videos and, surprisingly, be used to estimate the heart rate (HR). While considerable progress has been made in the last few years, still many issues remain open. In particular, state-of-the-art approaches are not robust enough to operate in natural conditions (e.g. in case of spontaneous movements, facial expressions, or illumination changes). Opposite to previous approaches that estimate the HR by processing all the skin pixels inside a fixed region of interest, we introduce a strategy to dynamically select face regions useful for robust HR estimation. The present approach, inspired by recent advances on matrix completion theory, allows us to predict the HR while simultaneously discover the best regions of the face to be used for estimation. Thorough experimental evaluation conducted on public benchmarks suggests that the proposed approach significantly outperforms state-of-the-art HR estimation methods in naturalistic conditions.

Classes IPC  ?

• G06K 9/00 - Méthodes ou dispositions pour la lecture ou la reconnaissance de caractères imprimés ou écrits ou pour la reconnaissance de formes, p.ex. d'empreintes digitales
• A61B 5/024 - Mesure du pouls ou des pulsations cardiaques
• G06T 7/00 - Analyse d'image
• G06T 7/11 - Découpage basé sur les zones
• G06T 7/90 - Détermination de caractéristiques de couleur
• G06T 3/00 - Transformations géométriques de l'image dans le plan de l'image
• A61B 5/00 - Mesure servant à établir un diagnostic Identification des individus
• G06K 9/46 - Extraction d'éléments ou de caractéristiques de l'image
• A61B 5/021 - Mesure de la pression dans le cœur ou dans les vaisseaux sanguins
• A61B 5/11 - Mesure du mouvement du corps entier ou de parties de celui-ci, p. ex. tremblement de la tête ou des mains ou mobilité d'un membre
• A61B 5/16 - Dispositifs pour la psychotechnieTest des temps de réaction

Abrégé

A wideband power attenuator in RF-MEMS multilayer technology, for attenuating an electromagnetic signal, includes an upper layer with two RF ground planes, and between said two RF ground planes a central RF-MEMS movable switch as a floating electrode, an RF input, an RF output of an RF line running across the attenuator, a number of lower layers including in sequence: a ground floor of an electrically insulating substrate; two DC biasing electrodes to electrostatically control said movable switch, and DC biasing lines to feed the DC biasing electrodes; two DC-RF decoupling resistors, each decoupling resistor being connected on one side to respective terminals of said movable switch, and on the other side to respective one of the two RF ground planes; a resistive load adapted to be connected to the RF line to attenuate the electromagnetic signal on the basis of the floating movable switch configuration, between a non-contact RF position and a contact RF position with said RF line.

Classes IPC  ?

• H04B 1/04 - Circuits
• B81B 3/00 - Dispositifs comportant des éléments flexibles ou déformables, p. ex. comportant des membranes ou des lamelles élastiques

Abrégé

A semiconductor detector for detecting radiation comprises a first semiconductor part in which an electron and a hole are generated by incident radiation; a signal output electrode outputting a signal base on the electron or the hole; and a gettering part gettering impurities in the first semiconductor part. In addition, the semiconductor detector further comprises a second semiconductor part doped with a type of dopant impurities and having dopant impurity concentration higher than that of the first semiconductor part. The second semiconductor part is in contact with the first semiconductor part. The gettering part is in contact with the second semiconductor part and not in contact with the first semiconductor part.

Classes IPC  ?

• G01T 1/24 - Mesure de l'intensité de radiation avec des détecteurs à semi-conducteurs
• G01T 1/36 - Mesure de la distribution spectrale des rayons X ou d'une radiation nucléaire
• H01L 31/118 - Dispositifs sensibles au rayonnement d'ondes très courtes, p.ex. rayons X, rayons gamma ou rayonnement corpusculaire du type détecteurs à barrière de surface ou à jonction PN superficielle, p.ex. détecteurs de particules alpha à barrière de surface
• H01L 31/115 - Dispositifs sensibles au rayonnement d'ondes très courtes, p.ex. rayons X, rayons gamma ou rayonnement corpusculaire

Abrégé

The invention is a volumetric receiver (100, 200) configured to absorb the radiation (R) emitted by a heat source (S) and incident on an exposed face (102, 202) of the same volumetric receiver (100, 200) and to transfer the thermal energy induced by said absorption to a surrounding heat transfer fluid (F). This volumetric receiver (100, 200) comprises a plurality of hollow cells (1 ) whose longitudinal axes are substantially orthogonal with respect to the exposed face (102, 202), wherein the hollow cells (1 ) are adjacent and stably connected to one another in such a way as to define at least one level (104; 204a, 204b, 204c) substantially parallel to the exposed face (102, 202), each one of the hollow cells (1 ) defining a channel open at both its ends opposite each other according to said longitudinal axis and each one of the hollow cells (1 ) being also provided with an opening (3) made on its lateral surface (2).

Classes IPC  ?

• F24J 2/04 - Collecteurs de chaleur solaire avec fluide vecteur circulant à travers le collecteur
• F24J 2/07 - Récepteurs à haute température, p.ex. pour centrales solaires
• F24J 2/28 - comportant une masse perméable, du matériau poreux ou foraminé

Abrégé

The invention is a pixel (1) for detecting photons, of the type comprising: a photodiode (2) having a first contact terminal (21) connected to the first contact terminal (31) of first electronic interruption means (3) and the second contact terminal (22) connected to a first input pin (11) of the pixel (1); the first electronic interruption means (3) having the switch over control terminal (33) connected to a second input pin (12) and the second contact terminal (32) connected to a third input pin (13); second electronic interruption means (4) having the first contact terminal (41) connected to a first charge accumulation element (101), the second contact terminal (42) connected to the first contact terminal (21) and the switch over control terminal (43) connected to a fourth input pin (14); third electronic interruption means (5) having the first contact terminal (51) connected to a fifth input pin (15) and the switch over control terminal (53) connected to the first charge accumulation element (101); fourth electronic interruption means (6) having the first contact terminal (61) connected to a third charge accumulation element (103) and to an output pin (10), the second contact terminal (62) connected to the first contact terminal (71) of fifth electronic interruption means (7) and to a second charge accumulation element (102) and the switch over control terminal (63) connected to the second contact terminal (52) of the third electronic interruption means (5); the fifth electronic interruption means (7) having the second contact terminal (72) connected to a sixth input pin (16) and the switch over control terminal (73) connected to a seventh input pin (17).

Classes IPC  ?

• H04N 5/335 - Transformation d'informations lumineuses ou analogues en informations électriques utilisant des capteurs d'images à l'état solide [capteurs SSIS] 
• H04N 5/3745 - Capteurs adressés, p.ex. capteurs MOS ou CMOS ayant des composants supplémentaires incorporés au sein d'un pixel ou connectés à un groupe de pixels au sein d'une matrice de capteurs, p.ex. mémoires, convertisseurs A/N, amplificateurs de pixels, circuits communs ou composants communs
• G01J 1/44 - Circuits électriques

Abrégé

The invention is a Hall effect magnetic sensor (1 ) suited to measure the intensity of a magnetic field (M), comprising a semiconductor substrate (2) subjected to doping on which the following elements are defined: two diodes arranged side by side; means (6) suited to inject minority charge carriers (100) and provided on the semiconductor substrate (2) along the axis of symmetry (X) defined between the two diodes (3), wherein the injector means (6) are configured to inject the minority charge carriers (100) in the semiconductor substrate (2) in such a way as to generate a diffusion current suited to flow under the two diodes (3); processing means (7) operatively connected to each output channel (32) of the two diodes (3) and configured to count the number of events induced by the minority charge carriers (100) on both of the diodes (3) during a pre-established time observation window (T) and to calculate the difference between the counts at the end of the observation time window (T). The Hall effect magnetic sensor (1 ) furthermore comprises a quenching circuit (5) connected in series to each one of the output channels (32) of the diodes (3) and the processing means (7) are operatively connected in an intermediate position between the output channels (32) and the quenching circuits (5).

Classes IPC  ?

• G01R 33/00 - Dispositions ou appareils pour la mesure des grandeurs magnétiques
• G01R 33/07 - Mesure de la direction ou de l'intensité de champs magnétiques ou de flux magnétiques en utilisant des dispositifs galvano-magnétiques des dispositifs à effet Hall

Abrégé

The invention is a colour pixel (1) comprising a plurality of photodiodes (2) reversely polarized by means of an electrical connection to a voltage source (Vres), a colour filter (3) superimposed to the plurality of photodiodes (2) to differentiate the wavelength of the light radiation incident on each photodiode (2), and a processing unit (5) operatively connected to the plurality of photodiodes (2) and configured to receive as an input the signals (20, 21, 22) generated by the photodiodes (2). The processing unit (5) is furthermore configured to determine and present as an output the normalized value (30, 31, 32) of at least one of the signals (20, 21, 22) with respect to the overall sum of the signals (20, 21, 22) generated by the plurality of photodiodes (2).

Classes IPC  ?

• H04N 9/04 - Générateurs de signaux d'image
• H04N 5/378 - Circuits de lecture, p.ex. circuits d’échantillonnage double corrélé [CDS], amplificateurs de sortie ou convertisseurs A/N
• H04N 5/3745 - Capteurs adressés, p.ex. capteurs MOS ou CMOS ayant des composants supplémentaires incorporés au sein d'un pixel ou connectés à un groupe de pixels au sein d'une matrice de capteurs, p.ex. mémoires, convertisseurs A/N, amplificateurs de pixels, circuits communs ou composants communs
• H04N 5/374 - Capteurs adressés, p.ex. capteurs MOS ou CMOS

Abrégé

A solid-state photomultiplier device comprising a surface (2) sensitive to photons (F) provided on a semiconductor substrate (3) and provided with a plurality of light sensitive microcells (4) divided into a plurality of sub-groups arranged one after the other according to a pre-established trajectory. The device comprises a plurality of current dividers (7), each of which is electrically connected to at least one of the sub-groups, and where each of the current dividers (7) comprises a first resistor (71) and a second resistor (72) to implement a current partition of the resistive type. The first resistors (71) and the second resistors (72) respectively have a gradually descending and gradually increasing conductance value in proportion to the position along the pre-established trajectory of the sub-group to which each of the current dividers (7) is electrically connected. The device also comprises a first output channel (10) electrically connected to one end of the first resistors (71) and a second output channel (11) electrically connected to one end of the second resistors (72).

Classes IPC  ?

• G01T 1/208 - Circuits spécialement adaptés aux détecteurs à scintillation, p. ex. à l'élément photomultiplicateur
• G01T 1/24 - Mesure de l'intensité de radiation avec des détecteurs à semi-conducteurs

Abrégé

The invention is a solid-state photomultiplier device (SiPM) (1) for detecting one or more photons (F), comprising a sensitive surface (2) created on a semiconductor substrate (3), wherein the sensitive surface (2) is defined by a plurality of light sensitive microcells (4) connected to one another in parallel in such a way as to send out a common analog output signal (Sout), each one of the light sensitive microcells (4) comprising an avalanche photodiode (5) interposed between a first electrode (6) and a second electrode (7) suited to supply a reverse polarization voltage to the avalanche photodiode (5). The device is provided, for each one of the light sensitive microcells (4), with an interruption component (8) suited to interrupt electric continuity and interposed between the accumulation terminal (53) that accumulates the avalanche charge of the avalanche photodiode (5) and the first electrode (6). The interruption components (8) of the plurality of light sensitive microcells (4) are configured in such a way as to simultaneously switch over from a state of conduction to a state of inhibition or vice versa.

Classes IPC  ?

• H01L 27/144 - Dispositifs commandés par rayonnement
• H01L 27/146 - Structures de capteurs d'images

Abrégé

The invention relates to an alpha particles detector comprising a semiconductor substrate (20), a matrix (100) of pixels (11) formed in the semiconductor substrate (20) and a plurality of bipolar transistors (110) having base regions (2) and emitter regions (3) formed in every pixel (11), the semiconductor substrate (20) being configured as a common collector for all the transistors (110).

Classes IPC  ?

• G01T 1/178 - Dispositions de circuits non adaptés à un type particulier de détecteur pour la mesure d'une activité spécifique en présence d'autres substances radioactives, p. ex. des substances naturelles, présentes dans l'air ou dans des liquides tels que l'eau de pluie
• G01T 1/29 - Mesure effectuée sur des faisceaux de radiations, p. ex. sur la position ou la section du faisceauMesure de la distribution spatiale de radiations
• H01L 31/115 - Dispositifs sensibles au rayonnement d'ondes très courtes, p.ex. rayons X, rayons gamma ou rayonnement corpusculaire

Abrégé

The present invention concerns a hydrophilic polymer surface preferably having a contact angle smaller than 20°. The surface comprises gold. The invention also concerns a process for the production of such a surface, comprising the following steps: a) preparation of a polymer surface; b) preferably cleaning of the polymer surface; and c) treatment of the preferably cleaned surface with a plasma treatment in combination with a cathode spray with a gold target. The description concerns also the use of the process to give anti-fogging and anti-light scattering characteristics to optical elements and items comprising said hydrophilic polymer surface.

Classes IPC  ?

• C23C 14/08 - Oxydes
• C23C 14/20 - Matériau métallique, bore ou silicium sur des substrats organiques
• C23C 14/00 - Revêtement par évaporation sous vide, pulvérisation cathodique ou implantation d'ions du matériau composant le revêtement

Abrégé

A computer-implemented method for determining a configuration of a plurality of components in a systems installation which satisfies one or more constraints.

Classes IPC  ?

• G06F 17/50 - Conception assistée par ordinateur
• G06T 19/00 - Transformation de modèles ou d'images tridimensionnels [3D] pour infographie

Abrégé

The invention concerns an X-ray diffractometer (1) having Bragg-Brentano geometry in the theta-theta configuration for the crystallographic characterization of samples (C) of solid materials, powders and/or liquid samples subjected to analysis, which includes: a tubular supporting body (4) which is associated with a flange (8) provided with a circular through hole (9) and defined by two opposing walls (10, 11) to which a first and a second annular bearings (12, 13) are respectively associated; two tubular shafts (14, 15), each of which is supported during its rotation by the two annular bearings (12, 13), one of the tubular shafts (14) being arranged so that it passes through the flange (8) and is internally coaxial with the second tubular shaft (15) so that they both have their free end (141, 151) protruding from the same side of the supporting body (4); two direct drive servo operated motors (16, 17), annular in shape, each of which is suited to set one of the two tubular shafts (14, 15) rotating around the common axis (x); an X-ray emitter unit (2) and a unit (3) suited to detect the X-rays diffracted from the sample (C), each of which is associated with one of the free ends (141, 151) of the tubular shafts (14, 15), in such a way as to define the goniometric axis theta1 and the goniometric axis theta2 of the diffractometer (1) that are coaxial to each other and rotate independently.

Classes IPC  ?

• G01N 23/207 - Diffractométrie, p. ex. en utilisant une sonde en position centrale et un ou plusieurs détecteurs déplaçables en positions circonférentielles

Abrégé

The method for efficient target detection from images robust to occlusion disclosed by the present invention detects the presence and spatial location of a number of objects in images. It consists in (i) an off-line method to compile an intermediate representation of detection probability maps that are then used by (ii) an on-line method to construct a detection probability map suitable for detecting and localizing objects in a set of input images efficiently. The method explicitly handles occlusions among the objects to be detected and localized, and objects whose shape and configuration is provided externally, for example from an object tracker. The method according to the present invention can be applied to a variety of objects and applications by customizing the method's input functions, namely the object representation, the geometric object model, its image projection method, and the feature matching function.

Classes IPC  ?

• H04N 5/235 - Circuits pour la compensation des variations de la luminance de l'objet
• H04N 5/228 - Caméras de télévision - Détails de circuits pour tubes analyseurs

Abrégé

There is described a method for managing information to actively support the definition of new process flows, in particular in the field of micro- and nanotechnology devices typically developed in cleanroom laboratories where one or more production batches can be executed according to one reference process flow. With the use of this method it is possible to store information suited to trace the reliability and the evolution of technological recipes used into one or more production batches based on a given reference process flow. Thanks to these storing and tracing capabilities, the method addresses the selection of appropriate and reliable recipes while designing new process flows, thus favoring the definition of highly reliable new processes. The method is general and transparent with respect to different recipe types, recipe structures and technologies.

Classes IPC  ?

• G05B 19/418 - Commande totale d'usine, c.-à-d. commande centralisée de plusieurs machines, p. ex. commande numérique directe ou distribuée [DNC], systèmes d'ateliers flexibles [FMS], systèmes de fabrication intégrés [IMS], productique [CIM]

Abrégé

The apparatus (1) for obtaining electricity from solar energy is made up of heating means (2) for heating a thermo- vector fluid, which comprise at least a solar collector (2), a machine (3) of reciprocating type which is suitable for transforming the energy of the thermo-vector fluid into mechanical energy and which is associable with the heating means (2) by the interposition of connection (12, 19) means through which the thermo-vector fluid flows, and a transformation mechanism (10) for transforming the mechanical energy into electricity associable with the machine.

Classes IPC  ?

• F03G 6/04 - Dispositifs produisant une puissance mécanique à partir d'énergie solaire utilisant un fluide de travail à un seul état gazeux
• F03G 6/06 - Dispositifs produisant une puissance mécanique à partir d'énergie solaire avec des moyens de concentration de l'énergie solaire
• F02G 1/043 - Ensembles fonctionnels de moteurs à gaz chauds à déplacement positif du type à cycle fermé le moteur étant actionné par dilatation et compression d'une masse de gaz de travail chauffée et refroidie dans une ou plusieurs chambres continuellement communicantes expansibles, p. ex. moteurs du type à cycle de Stirling
• F24D 17/00 - Systèmes domestiques d'alimentation en eau chaude

Abrégé

A method for tracking a number of objects or object parts in image sequences utilizes a Bayesian-like approach to object tracking, computing, at each time a new image is available, a probability distribution over all possible target configurations for that time. The Bayesian-like approach to object tracking computes a probability distribution for the previous image, at time (t−1), is propagated to the new image at time (t) according to a probabilistic model of target dynamics, obtaining a predicted distribution at time (t). The Bayesian-like approach to object tracking also aligns the predicted distribution at time (t) with the evidence contained in the new image at time (t) according to a probabilistic model of visual likelihood.

Classes IPC  ?

• G06K 9/00 - Méthodes ou dispositions pour la lecture ou la reconnaissance de caractères imprimés ou écrits ou pour la reconnaissance de formes, p.ex. d'empreintes digitales

Produits et services

Pre-recorded magnetic data carriers relating to scientific subjects. Paper, cardboard and goods made from these materials, not included in other classes; printed matter; bookbinding material; photographs; stationery; adhesives for stationery or household purposes; artists' materials; paint brushes; typewriters and office requisites (except furniture); instructional and teaching material (except apparatus); plastic materials for packaging (not included in other classes); printers' type; printing blocks. Telecommunications; Information about telecommunication; rental of telecommunication equipment; rental of telephones. Education, providing of training, conventions, events and seminars, publishing in the scientific sector, rental of pre-recorded magnetic data carriers containing scientific material, library services. Services in the field of science and technology, such as related research and development services; industrial analysis and research; design and development ofcomputer hardware and software.

Produits et services

Pre-recorded magnetic data carriers relating to scientific subject matter, none of the aforesaid goods being used with reference to motorcycling competitions and sporting events in general. Paper, cardboard and goods made from these materials, not included in other classes; printed matter; bookbinding material; photographs; stationery; adhesives for stationery or household purposes; artists' materials; paint brushes; typewriters and office requisites (except furniture); instructional and teaching material (except apparatus); plastic materials for packaging (not included in other classes); printers' type; printing blocks. Telecommunications expressly excluding services relating to motorcycling competitions and sporting events in general. Education and providing of training, conventions, events and seminars, publishing in the field of science, rental of pre-recorded magnetic data carriers containing scientific material, lending libraries, none of the aforesaid services being provided in the field of plastic materials and polymers and none of the aforesaid services being provided in relation to motorcycling competitions and sporting events in general. Services in the field of science and technology, such as related research and development services; industrial analysis and research; design and development of computers and computer programs, none of the aforesaid services being provided in the field of plastic materials and polymers.

Produits et services

Pre-recorded magnetic data carriers relating to scientific subjects. Paper, cardboard and goods made from these materials, not included in other classes; printed matter; bookbinding material; photographs; stationery; adhesives for stationery or household purposes; artists' materials; paint brushes; typewriters and office requisites (except furniture); instructional and teaching material (except apparatus); plastic materials for packaging (not included in other classes); printers' type; printing blocks. Telecommunications. Education, providing of training, conventions, events and seminars, publishing in the scientific sector, rental of pre-recorded magnetic data carriers containing scientific material, library services. Services in the field of science and technology, such as related research and development services; industrial analysis and research; design and development ofcomputer hardware and software.

Produits et services

Scientific, nautical, surveying, photographic, cinematographic, optical, weighing, measuring, signalling, checking (supervision), life-saving and teaching apparatus and instruments; apparatus and instruments for conducting, switching, transforming, accumulating, regulating or controlling electricity; apparatus for recording, transmission or reproduction of sound or images; magnetic data carriers, recording discs; automatic vending machines and mechanisms for coin-operated apparatus; cash registers, calculating machines, data processing equipment and computers; fire-extinguishing apparatus. Paper, cardboard and goods made from these materials, not included in other classes; printed matter; bookbinding material; photographs; stationery; adhesives for stationery or household purposes; artists' materials; paint brushes; typewriters and office requisites (except furniture); instructional and teaching material (except apparatus); plastic materials for packaging (not included in other classes); printers' type; printing blocks. Advertising; business management; business administration; office functions. Telecommunications. Education; providing of training; entertainment; sporting and cultural activities. Scientific and technological services and research and design relating thereto; industrial analysis and research services; design and development of computer hardware and software. Legal services; security services for the protection of property and individuals; personal and social services rendered by others to meet the needs of individuals.

Abrégé

The present application relates to a system, apparatus and method for feedback-controlling a sensor array. The apparatus includes an imaging sensor unit comprising: a sensor module including a plurality of photosensors; a memory module coupled to the sensor module, the memory module configured to receive a sensor output from the sensor module; a local control module coupled to the sensor module, the local control module configured to: receive a local feedback signal from the sensor module; receive a global feedback signal; and use the local feedback signal and the global feedback signal to control the memory module to store the sensor output.

Classes IPC  ?

• H04N 5/353 - Réglage du temps d'intégration
• H04N 5/3745 - Capteurs adressés, p.ex. capteurs MOS ou CMOS ayant des composants supplémentaires incorporés au sein d'un pixel ou connectés à un groupe de pixels au sein d'une matrice de capteurs, p.ex. mémoires, convertisseurs A/N, amplificateurs de pixels, circuits communs ou composants communs