Abstract

The present application relates to a system, apparatus and method for feedback-controlling a sensor array. The apparatus includes an imaging sensor unit comprising: a sensor module including a plurality of photosensors: a memory module coupled to the sensor module, the memory module configured to receive a sensor output from the sensor module: a local control module coupled to the sensor module, the local control module configured to: receive a local feedback signal from the sensor module: receive a global feedback signal; and use the local feedback signal and the global feedback signal to control the memory module to store the sensor output.

IPC Classes  ?

• H04N 25/40 - Extracting pixel data from image sensors by controlling scanning circuits, e.g. by modifying the number of pixels sampled or to be sampled
• H04N 25/10 - Circuitry of solid-state image sensors [SSIS]Control thereof for transforming different wavelengths into image signals
• H04N 25/20 - Circuitry of solid-state image sensors [SSIS]Control thereof for transforming only infrared radiation into image signals

Abstract

A solid-state gas sensor (10) includes a semiconductor chip (12), which in turn includes an element sensitive to the presence of one or more gaseous species. The sensor includes a support (13) on which the semiconductor chip is mounted. The support (13) has electrical connection pads (14A, 14B, 14C, 14D) connected to respective electrodes of the semiconductor chip and accessible from outside the sensor via respective electrical connection terminals (16A, 16B, 16C, 16D). The sensor includes a closure element (18) mounted on the support (13) to define a sensing chamber at the upper surface of the semiconductor chip (12). The closure element (18) has one or more through holes to allow gas exchange between the sensing chamber and the external environment. The sensor includes a selective membrane arranged internally in the closure element (18) between the upper surface of the semiconductor chip (12) and the through holes. The selective membrane includes cellulose nanocrystals.

IPC Classes  ?

• G01N 27/12 - Investigating or analysing materials by the use of electric, electrochemical, or magnetic means by investigating impedance by investigating resistance of a solid body in dependence upon absorption of a fluidInvestigating or analysing materials by the use of electric, electrochemical, or magnetic means by investigating impedance by investigating resistance of a solid body in dependence upon reaction with a fluid
• G01N 33/00 - Investigating or analysing materials by specific methods not covered by groups

Abstract

A manufacturing method of a diode radiation sensor having a charge multiplication diode includes providing a substrate that is made of a semiconductor material and has a front surface and a rear surface; making, near the front surface, a first layer of a semiconductor material having a first type of doping; and making, deep in the substrate, a second layer of a semiconductor material having a second type of doping that is electrically opposite to the first type. The second layer is obtained by inserting into the substrate a first predetermined amount of a first type of dopant and a second predetermined amount of a second type of dopant.

IPC Classes  ?

• H10F 71/00 - Manufacture or treatment of devices covered by this subclass
• H10F 30/00 - Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors

Abstract

A diode radiation sensor having charge multiplication diodes and comprising a substrate with a front and a rear surface; a first layer of a semiconductor material doped with a first type of doping and arranged on the front surface of the substrate; a second layer of a semiconductor material doped with a second type of doping of electrically opposite sign to the first type and arranged to create a high electric field region between the first and the second layer; a third layer of a semiconductor material doped with a the second type of doping; a first isolation region interposed between a lateral edge of a charge multiplication diode and the first and the second layer of the semiconductor materials and extending into the substrate from the front surface to the third layer so as to create a working area electrically separated from the first and the second layer.

IPC Classes  ?

• H01L 31/107 - Devices sensitive to infrared, visible or ultraviolet radiation characterised by only one potential barrier or surface barrier the potential barrier working in avalanche mode, e.g. avalanche photodiode
• H01L 31/02 - SEMICONDUCTOR DEVICES NOT COVERED BY CLASS - Details thereof - Details

Abstract

A diode radiation sensor includes a substrate; a first layer of semiconductor material doped with a doping of a first type and provided on the front surface of the substrate; a second layer of semiconductor material doped with a doping of a second type of electrically opposite sign to the first type and provided at a first depth in the substrate, the first and the second layer forming a high electric field region therebetween; a third layer of semiconductor material doped with a doping of the second type and provided at a second depth in the substrate greater than the first depth; and a first isolation region provided peripherally to the substrate and extending deep in the substrate up to an intermediate area between the front and the rear surface of the substrate. A passivation layer is interposed between the lateral wall of the first isolation region and the substrate.

IPC Classes  ?

• H01L 31/107 - Devices sensitive to infrared, visible or ultraviolet radiation characterised by only one potential barrier or surface barrier the potential barrier working in avalanche mode, e.g. avalanche photodiode
• G01T 1/24 - Measuring radiation intensity with semiconductor detectors
• H01L 31/18 - Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof

Abstract

bgbgi) acquired in the first acquisition step.

IPC Classes  ?

• G01S 7/4861 - Circuits for detection, sampling, integration or read-out
• G01S 7/4863 - Detector arrays, e.g. charge-transfer gates
• G01S 7/487 - Extracting wanted echo signals
• G01S 17/18 - Systems determining position data of a target for measuring distance only using transmission of interrupted, pulse-modulated waves wherein range gates are used
• G01S 17/894 - 3D imaging with simultaneous measurement of time-of-flight at a 2D array of receiver pixels, e.g. time-of-flight cameras or flash lidar

Abstract

The present application relates to a system, apparatus and method for feedback-controlling a sensor array. The apparatus includes an imaging sensor unit comprising: a sensor module including a plurality of photosensors; a memory module coupled to the sensor module, the memory module configured to receive a sensor output from the sensor module; a local control module coupled to the sensor module, the local control module configured to: receive a local feedback signal from the sensor module; receive a global feedback signal; and use the local feedback signal and the global feedback signal to control the memory module to store the sensor output.

IPC Classes  ?

• H04N 5/353 - Control of the integration time
• H04N 5/3745 - Addressed sensors, e.g. MOS or CMOS sensors having additional components embedded within a pixel or connected to a group of pixels within a sensor matrix, e.g. memories, A/D converters, pixel amplifiers, shared circuits or shared components

Abstract

An execution method of a diode radiation sensor (1) having charge multiplication diodes (2), the method comprising the following steps: providing a substrate (3) made of semiconductor material, having a front surface (4) and a rear surface (5); making, near the front surface (4), a first layer (6) of semiconductor material doped with a first predetermined amount of a first type of dopant; making, deep in the substrate (3), a second layer (8) of semiconductor material doped with a second predetermined amount of a second type of dopant electrically opposite the first type of dopant. The method comprises, before the steps of making the first layer (6) and the second layer (8), a step of making in the substrate (3) a third layer (10) of semiconductor material enriched with carbon so that it contains a predetermined amount of said carbon.

IPC Classes  ?

• H01L 31/18 - Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof

Abstract

An execution method of a diode radiation sensor (1) having a charge multiplication diodes (2), the method comprising the following steps: providing a substrate (3) made of semiconductor material, having a front surface (4) and a rear surface (4b); making, near the front surface (4), a first layer (5) of semiconductor material doped with a first predetermined amount of a first type of dopant; making, deep in the substrate (3), a second layer (8) of semiconductor material doped with a second predetermined amount of a second type of dopant electrically opposite the first type. The second layer (8) is obtained by inserting into the substrate (3) a first predetermined amount of a first type of dopant and a second predetermined amount of a second type of dopant.

IPC Classes  ?

• H01L 31/18 - Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof

Abstract

Solid-state radiation sensor (1 ) for the detection of radiations, in particular of particles, of the type comprising at least one pixel (3) sensitive to such radiations. This pixel, in particular, comprises a first detection transistor (4) of the n-channel MOSFET type and a second detection transistor (8) of the p-channel MOSFET type. Said radiation sensor (1 ) further comprises a logic unit (12) configured to perform in sequence and periodically: - a pre-charging step (200) of said first detection transistor (4) and second detection transistor (8); - a step of exposure (201 ) of the pixel (3), making the first detection transistor (4) and the second detection transistor (8) float; - a step (202) of reading the state of the first detection transistor (4) and of the second detection transistor (8).

IPC Classes  ?

• G01T 1/24 - Measuring radiation intensity with semiconductor detectors
• G01T 1/17 - Circuit arrangements not adapted to a particular type of detector
• G01T 1/20 - Measuring radiation intensity with scintillation detectors
• H01J 37/244 - DetectorsAssociated components or circuits therefor
• G01T 1/164 - Scintigraphy
• G01T 1/29 - Measurement performed on radiation beams, e.g. position or section of the beamMeasurement of spatial distribution of radiation
• H01L 27/146 - Imager structures
• G01T 3/08 - Measuring neutron radiation with semiconductor detectors
• H04N 5/374 - Addressed sensors, e.g. MOS or CMOS sensors
• G01T 1/02 - Dosimeters

Abstract

Rapid test device for the detection of SARS-CoV-2 viruses and for the relative antibody production comprising a substrate of the lateral flow immunochromatographic assay divided into 5 regions: a first reception area to receive the biological sample ("Sample Deposition"); a second area where the first reaction takes place between an analyte and the molecule used for its specific identification ("Conjugation pad"); a third area where the signal amplification uses the addition of the gold nanoparticles ("Signal amplification"); a fourth test area ("Test line") and a fifth control area ("Control Line") in which a second and third immunoreaction takes place, providing a visual reading of the test result by means of a window and two results visible by a colored strip. The "sample deposition" area comprises a filter having porosity of about 200 nm - 1 µm.

IPC Classes  ?

• G01N 33/543 - ImmunoassayBiospecific binding assayMaterials therefor with an insoluble carrier for immobilising immunochemicals
• G01N 33/569 - ImmunoassayBiospecific binding assayMaterials therefor for microorganisms, e.g. protozoa, bacteria, viruses

Abstract

A diode radiation sensor having one or more charge multiplication diodes (2) and comprising: a substrate (3; 303) having a front surface (4) and a rear surface (5); a first layer of semiconductor material (8) doped with a doping of a first type and made on said front surface (4); a second layer of semiconductor material (9; 109; 209; 309) doped with a doping of a second type of electrically opposite sign to the first type and made to a first depth so as to make between the first layer (8) and the second layer (9; 109; 209; 309) a high electric field region (10); an isolation region (15; 315) made peripherally to the substrate (3; 303) and extending in depth to an intermediate area between the front surface (4) and the rear surface (5); a locking element (18; 118; 218; 318; 418) made in depth in the substrate (3; 303) to electrically isolate the first layer (8) and to hinder charge collection paths between the substrate (3; 303) and the front surface (4) extending laterally to the second layer (9; 109; 209; 309).

IPC Classes  ?

• H01L 31/107 - Devices sensitive to infrared, visible or ultraviolet radiation characterised by only one potential barrier or surface barrier the potential barrier working in avalanche mode, e.g. avalanche photodiode
• H01L 31/115 - Devices sensitive to very short wavelength, e.g. X-rays, gamma-rays or corpuscular radiation

Abstract

A diode radiation sensor comprising: a substrate (3; 103; 203; 303); a first layer of semiconductor material (8) doped with a doping of a first type and made on the front surface (4) of the substrate (3; 103; 203; 303); a second layer of semiconductor material (9) doped with a doping of a second type of electrically opposite sign to the first type and made at a first depth in the substrate (3; 103; 203; 303), between the first layer (8) and the second layer (9) forming a high electric field region (10); a third layer of semiconductor material (12) doped with a doping of the second type and made at a second depth in the substrate (3; 103; 203; 303) greater than the first depth; a first isolation region (15; 315) made peripherally to the substrate (3; 103; 203; 303) and extending deep in the substrate (3; 103; 203; 303) up to an intermediate area between the front surface (4) and the rear surface (5; 105; 205) of the substrate (3; 103; 203; 303). A passivation layer (18; 118; 218; 318) is interposed between the lateral wall of the first isolation region (8) and the substrate (3; 103; 203; 303).

IPC Classes  ?

• H01L 31/107 - Devices sensitive to infrared, visible or ultraviolet radiation characterised by only one potential barrier or surface barrier the potential barrier working in avalanche mode, e.g. avalanche photodiode

Abstract

A diode radiation sensor having multiple charge multiplication diodes (2), and comprising: a substrate (3) having a front surface (4) and a rear surface (5); a first layer of semiconductor material (8) doped with a doping of a first type and made on the front surface (4) of the substrate (3); a second layer of semiconductor material (9) doped with a doping of a second type of electrically opposite sign to the first type and made so as to create between the first layer (8) and the second layer (9) a high electric field region (10); a third layer of semiconductor material (12) doped with a doping of the second type; a first isolation region (18) interposed between a lateral edge (15b) of the charge multiplication diode (2) and the first (8) and the second layer of semiconductor material (9) and extending in depth in the substrate (3) from the front surface (4) to the third layer of semiconductor material (12) so as to make a working area (19; 119) electrically separated from the first (8) and the second layer of semiconductor material (9).

IPC Classes  ?

• H01L 31/107 - Devices sensitive to infrared, visible or ultraviolet radiation characterised by only one potential barrier or surface barrier the potential barrier working in avalanche mode, e.g. avalanche photodiode

Abstract

A solid-state image sensor for detecting one or more photons includes a plurality of pixels sensitive to such photons, each of the pixels having a logic unit and an avalanche photodiode operatively connected to the logic unit, the logic unit being configured to provide an electrical signal different from the electrical signals provided by the logic units of the remaining pixels. The logic unit of each of the pixels is operatively connected to the logic unit of an adjacent pixel, such logic unit outputting the electrical signal when the avalanche photodiode belonging to the same pixel and the avalanche photodiode belonging to such adjacent pixel each detect at least one photon within a time window.

IPC Classes  ?

• H01L 27/146 - Imager structures
• G01S 17/894 - 3D imaging with simultaneous measurement of time-of-flight at a 2D array of receiver pixels, e.g. time-of-flight cameras or flash lidar
• H01L 31/107 - Devices sensitive to infrared, visible or ultraviolet radiation characterised by only one potential barrier or surface barrier the potential barrier working in avalanche mode, e.g. avalanche photodiode

Abstract

A label (100) suitable for certifying the authenticity of an article, which label (100) comprises: - a support (S) intended to be applied to the article to be certified, - a substrate (L) configured to adhere reversibly to said support (S), - an adhesive layer (2), interposed between said support (S) and said substrate (L), configured to realize a detachment irreversible of said support (S) from the article after the application, wherein said support (S) bears an authentication code (20) identifying the article and said adhesive layer (2) comprises a security element (10), the authentication code (20) and the security element (10) being reciprocally positioned so as to define an overlapping region (15), wherein said security element (10) comprises a reactive optical component (10') detectable at an inspection area () of said overlapping region (15) and wherein said adhesive layer (2) is configured so that said support (S), when detaching from the article, is lack of said reactive optical component (10').

IPC Classes  ?

• G06K 19/06 - Record carriers for use with machines and with at least a part designed to carry digital markings characterised by the kind of the digital marking, e.g. shape, nature, code
• B42D 25/36 - Identification or security features, e.g. for preventing forgery comprising special materials
• G06K 19/08 - Record carriers for use with machines and with at least a part designed to carry digital markings characterised by the kind of the digital marking, e.g. shape, nature, code using markings of different kinds in the same record carrier, e.g. one marking being sensed by optical and the other by magnetic means
• G09F 3/03 - Forms or constructions of security seals
• B42D 25/47 - Associating two or more layers using chemicals or adhesives using adhesives

Abstract

A power supply circuit module (1) for a TDC (Time to Digital Converter) (20) comprising a first input (2) for receiving a control signal (Vref), a second input (3) for receiving a power supply voltage (Vdd), an output (4) configured to be connected to the power supply input (21) of said TDC (20), an active main power supply device (5) configured to receive the control signal (Vref) at the input and to contribute on the value of the power supply voltage resulting at an output (4) by a voltage value lower than a first predefined percentage (PP1) with respect to said nominal power supply voltage (Vnom) and a number N of active secondary power supply devices (6) each being configured to contribute on the value of the power supply voltage resulting at the output (4) by a percentage different from the remaining active secondary power supply devices (6) and all the active secondary power supply devices (6) being configured as a whole to contribute on the value of said power supply voltage resulting at said output (4) by a second predefined percentage (PP2) of the value of said nominal power supply voltage (Vnom) variable between zero and substantially twice said first pre-established percentage (PP1).

IPC Classes  ?

• G04F 10/00 - Apparatus for measuring unknown time intervals by electric means

Abstract

TT).

IPC Classes  ?

• G01S 7/481 - Constructional features, e.g. arrangements of optical elements
• G01S 7/4863 - Detector arrays, e.g. charge-transfer gates
• G01S 7/487 - Extracting wanted echo signals
• G01S 7/48 - Details of systems according to groups , , of systems according to group
• G01S 17/08 - Systems determining position data of a target for measuring distance only

Abstract

The present invention relates to a matrix of sensors for detecting pressure on wide areas, comprising first and second conductive layers (20, 40) and a polymeric active matrix (30), the polymeric matrix comprising a semi-conducting polymer (31) and a piezoelectric polymer (32), and a process for the manufacturing thereof, useful to detect pressure data and transduce them into electric current signals, for applications in biomedical, sensor fields and in displays.

IPC Classes  ?

• H01L 41/113 - Piezo-electric or electrostrictive elements with mechanical input and electrical output
• H01L 41/193 - Macromolecular compositions
• G01K 7/34 - Measuring temperature based on the use of electric or magnetic elements directly sensitive to heat using capacitative elements
• G01L 9/00 - Measuring steady or quasi-steady pressure of a fluid or a fluent solid material by electric or magnetic pressure-sensitive elementsTransmitting or indicating the displacement of mechanical pressure-sensitive elements, used to measure the steady or quasi-steady pressure of a fluid or fluent solid material, by electric or magnetic means
• G01R 27/02 - Measuring real or complex resistance, reactance, impedance, or other two-pole characteristics derived therefrom, e.g. time constant
• H01L 41/45 - Organic materials

Abstract

Provided are a radiation detector and a radiation detection apparatus in which the efficiency of detecting radiation is enhanced by increasing a portion capable of detecting radiation. A radiation detector includes a semiconductor part having a plate-like shape, the semiconductor part being provided with a through hole penetrating the semiconductor part, one surface of the semiconductor part being an incident surface for radiation. The semiconductor part has a sensitive portion capable of detecting incident radiation, the sensitive portion including an inner edge of the incident surface.

IPC Classes  ?

• G01T 1/24 - Measuring radiation intensity with semiconductor detectors
• G01T 1/02 - Dosimeters
• H01J 37/244 - DetectorsAssociated components or circuits therefor
• H01L 31/0224 - Electrodes
• G01N 23/203 - Measuring back scattering
• A61B 6/00 - Apparatus or devices for radiation diagnosisApparatus or devices for radiation diagnosis combined with radiation therapy equipment
• G01N 23/207 - Diffractometry, e.g. using a probe in a central position and one or more displaceable detectors in circumferential positions
• H01L 27/146 - Imager structures
• H01L 27/14 - Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy
• H01L 31/0352 - SEMICONDUCTOR DEVICES NOT COVERED BY CLASS - Details thereof characterised by their semiconductor bodies characterised by their shape or by the shapes, relative sizes or disposition of the semiconductor regions
• G01N 21/47 - Scattering, i.e. diffuse reflection

Abstract

Described herein is a sensor (1) for detection of biomolecules in a biological fluid via chemiluminescence reaction, said sensor comprising: - a microfluidic layer (2) defining a reaction volume (3), said reaction volume being in fluid communication with an inlet microchannel (4) for inlet of at least one fluid into said reaction volume and with an outlet microchannel (5) for discharge of at least one fluid from said reaction volume; - an optoelectronic layer (6) comprising at least one photodetector (7) for detection of electromagnetic radiation generated, in use, by a chemiluminescence reaction in said reaction volume (3); - a separation layer (8) set between said microfluidic layer (2) and said optoelectronic layer (6), said separation layer being at least partially transparent to electromagnetic radiation in a given range of wavelengths; and - a microstructured surface (9) facing into said reaction volume (3), said microstructured surface comprising a plurality of micro-pillars (12) preferably having an approximately cylindrical shape, said micro¬ pillars having a longitudinal dimension comprised between 50 pm and 400 pm and a transverse dimension comprised between 5 pm and 20 pm.

IPC Classes  ?

• G01N 21/76 - ChemiluminescenceBioluminescence
• B01L 3/00 - Containers or dishes for laboratory use, e.g. laboratory glasswareDroppers

Abstract

A process for producing an anode for lithium-ion batteries, comprising the following steps: depositing by plasma-enhanced chemical vapor deposition (PECVD) an active material (1) directly onto a metal substrate (2) intended to form a current collector, the active material (1) consisting substantially of a germanium film, and subjecting the film (1) to anodic oxidation to make it porous or increase its porosity.

IPC Classes  ?

• H01M 4/04 - Processes of manufacture in general
• H01M 4/13 - Electrodes for accumulators with non-aqueous electrolyte, e.g. for lithium-accumulatorsProcesses of manufacture thereof
• H01M 4/134 - Electrodes based on metals, Si or alloys
• H01M 4/1395 - Processes of manufacture of electrodes based on metals, Si or alloys

Abstract

A method for making the comparison between a continuous value analogue signal (S1 ) and a continuous value digital signal (S2), which provides the steps of: defining a ramp analogue signal (RAMP) having linearly variable value over time by periodically varying, for each time interval belonging to first predetermined time intervals (ck1), a first digital numerical value (cnt1) by a predetermined quantity and converting it into the ramp analogue signal (RAMP); simultaneously comparing, at each of the first predetermined time intervals (ck1), the value of the ramp analogue signal (RAMP) with the analogue signal (S1) and the first digital numerical value (cnt1) with the digital signal (S2); verifying at which of the first predetermined time intervals (ck1) the value of the ramp analogue signal (RAMP) equals the analogue signal (S1) and at which of the predetermined time intervals (ck1) the first digital numerical value (cnt1) equals the digital signal (S2); defining the time window (WIND) between the first equality and the second equality; increasing a second digital numerical value (cnt2) within the time window (WIND) for each time interval belonging to second predetermined time intervals (ck2).

IPC Classes  ?

• G01R 19/00 - Arrangements for measuring currents or voltages or for indicating presence or sign thereof

Abstract

A radiation detection element comprises: a semiconductor part generating an electric charge by entrance of radiation; a signal output electrode provided at the semiconductor part and outputting a signal caused by the electric charge; a potential gradient generation electrode provided at the semiconductor part, for applying voltage such that a potential gradient in which a potential varies toward the signal output electrode is generated inside the semiconductor part; a collection electrode provided at the semiconductor part, for collecting electric charges not derived from radiation; an insulating film provided on a side of the semiconductor part where the signal output electrode is located; and a conductive layer provided between the insulating film and a part of the semiconductor part, and having electric resistance lower than the electric resistance of the semiconductor part and higher than the electric resistance of the collection electrode. The conductive layer is located at a position where a distance from the signal output electrode is equal to or longer than a distance between the collection electrode and the signal output electrode.

IPC Classes  ?

• H01L 31/115 - Devices sensitive to very short wavelength, e.g. X-rays, gamma-rays or corpuscular radiation
• H01L 31/0224 - Electrodes
• G01T 1/24 - Measuring radiation intensity with semiconductor detectors
• H01L 31/08 - SEMICONDUCTOR DEVICES NOT COVERED BY CLASS - Details thereof in which radiation controls flow of current through the device, e.g. photoresistors

Abstract

Provided are: a radiation detector which has improved detection efficiency of radiation by being increased in the portion where radiation is able to be detected; and a radiation detection device. A radiation detector (1) according to the present invention comprises a plate-like semiconductor part (12), while being provided with a through hole (11) that penetrates through the semiconductor part (12); and one surface of the semiconductor part (12) serves as an incident surface (121) for radiation. The semiconductor part (12) has a sensitive portion (18) which is capable of detecting incident radiation; and the sensitive portion (18) includes an inner edge (122) of the incident surface (121).

IPC Classes  ?

• G01T 1/24 - Measuring radiation intensity with semiconductor detectors
• G01N 23/223 - Investigating or analysing materials by the use of wave or particle radiation, e.g. X-rays or neutrons, not covered by groups , or by measuring secondary emission from the material by irradiating the sample with X-rays or gamma-rays and by measuring X-ray fluorescence
• G01N 23/2251 - Investigating or analysing materials by the use of wave or particle radiation, e.g. X-rays or neutrons, not covered by groups , or by measuring secondary emission from the material using electron or ion microprobes using incident electron beams, e.g. scanning electron microscopy [SEM]
• H01J 37/244 - DetectorsAssociated components or circuits therefor
• H01L 31/08 - SEMICONDUCTOR DEVICES NOT COVERED BY CLASS - Details thereof in which radiation controls flow of current through the device, e.g. photoresistors

Abstract

Recent studies in computer vision have shown that, while practically invisible to a human observer, skin color changes due to blood flow can be captured on face videos and, surprisingly, be used to estimate the heart rate (HR). While considerable progress has been made in the last few years, still many issues remain open. In particular, state-of-the-art approaches are not robust enough to operate in natural conditions (e.g. in case of spontaneous movements, facial expressions, or illumination changes). Opposite to previous approaches that estimate the HR by processing all the skin pixels inside a fixed region of interest, we introduce a strategy to dynamically select face regions useful for robust HR estimation. The present approach, inspired by recent advances on matrix completion theory, allows us to predict the HR while simultaneously discover the best regions of the face to be used for estimation. Thorough experimental evaluation conducted on public benchmarks suggests that the proposed approach significantly outperforms state-of-the-art HR estimation methods in naturalistic conditions.

IPC Classes  ?

• G06K 9/00 - Methods or arrangements for reading or recognising printed or written characters or for recognising patterns, e.g. fingerprints
• A61B 5/024 - Measuring pulse rate or heart rate
• G06T 7/00 - Image analysis
• G06T 7/11 - Region-based segmentation
• G06T 7/90 - Determination of colour characteristics
• G06T 3/00 - Geometric image transformations in the plane of the image
• A61B 5/00 - Measuring for diagnostic purposes Identification of persons
• G06K 9/46 - Extraction of features or characteristics of the image
• A61B 5/021 - Measuring pressure in heart or blood vessels
• A61B 5/11 - Measuring movement of the entire body or parts thereof, e.g. head or hand tremor or mobility of a limb
• A61B 5/16 - Devices for psychotechnicsTesting reaction times

Abstract

A wideband power attenuator in RF-MEMS multilayer technology, for attenuating an electromagnetic signal, includes an upper layer with two RF ground planes, and between said two RF ground planes a central RF-MEMS movable switch as a floating electrode, an RF input, an RF output of an RF line running across the attenuator, a number of lower layers including in sequence: a ground floor of an electrically insulating substrate; two DC biasing electrodes to electrostatically control said movable switch, and DC biasing lines to feed the DC biasing electrodes; two DC-RF decoupling resistors, each decoupling resistor being connected on one side to respective terminals of said movable switch, and on the other side to respective one of the two RF ground planes; a resistive load adapted to be connected to the RF line to attenuate the electromagnetic signal on the basis of the floating movable switch configuration, between a non-contact RF position and a contact RF position with said RF line.

IPC Classes  ?

• H04B 1/04 - Circuits
• B81B 3/00 - Devices comprising flexible or deformable elements, e.g. comprising elastic tongues or membranes

Abstract

A semiconductor detector for detecting radiation comprises a first semiconductor part in which an electron and a hole are generated by incident radiation; a signal output electrode outputting a signal base on the electron or the hole; and a gettering part gettering impurities in the first semiconductor part. In addition, the semiconductor detector further comprises a second semiconductor part doped with a type of dopant impurities and having dopant impurity concentration higher than that of the first semiconductor part. The second semiconductor part is in contact with the first semiconductor part. The gettering part is in contact with the second semiconductor part and not in contact with the first semiconductor part.

IPC Classes  ?

• G01T 1/24 - Measuring radiation intensity with semiconductor detectors
• G01T 1/36 - Measuring spectral distribution of X-rays or of nuclear radiation
• H01L 31/118 - Devices sensitive to very short wavelength, e.g. X-rays, gamma-rays or corpuscular radiation of the surface barrier or shallow PN junction detector type, e.g. surface barrier alpha-particle detectors
• H01L 31/115 - Devices sensitive to very short wavelength, e.g. X-rays, gamma-rays or corpuscular radiation

Abstract

The invention is a volumetric receiver (100, 200) configured to absorb the radiation (R) emitted by a heat source (S) and incident on an exposed face (102, 202) of the same volumetric receiver (100, 200) and to transfer the thermal energy induced by said absorption to a surrounding heat transfer fluid (F). This volumetric receiver (100, 200) comprises a plurality of hollow cells (1 ) whose longitudinal axes are substantially orthogonal with respect to the exposed face (102, 202), wherein the hollow cells (1 ) are adjacent and stably connected to one another in such a way as to define at least one level (104; 204a, 204b, 204c) substantially parallel to the exposed face (102, 202), each one of the hollow cells (1 ) defining a channel open at both its ends opposite each other according to said longitudinal axis and each one of the hollow cells (1 ) being also provided with an opening (3) made on its lateral surface (2).

IPC Classes  ?

• F24J 2/04 - Solar heat collectors having working fluid conveyed through collector
• F24J 2/07 - Receivers working at high temperature, e.g. for solar power plants
• F24J 2/28 - having permeable mass, foraminous or porous materials

Abstract

The invention is a pixel (1) for detecting photons, of the type comprising: a photodiode (2) having a first contact terminal (21) connected to the first contact terminal (31) of first electronic interruption means (3) and the second contact terminal (22) connected to a first input pin (11) of the pixel (1); the first electronic interruption means (3) having the switch over control terminal (33) connected to a second input pin (12) and the second contact terminal (32) connected to a third input pin (13); second electronic interruption means (4) having the first contact terminal (41) connected to a first charge accumulation element (101), the second contact terminal (42) connected to the first contact terminal (21) and the switch over control terminal (43) connected to a fourth input pin (14); third electronic interruption means (5) having the first contact terminal (51) connected to a fifth input pin (15) and the switch over control terminal (53) connected to the first charge accumulation element (101); fourth electronic interruption means (6) having the first contact terminal (61) connected to a third charge accumulation element (103) and to an output pin (10), the second contact terminal (62) connected to the first contact terminal (71) of fifth electronic interruption means (7) and to a second charge accumulation element (102) and the switch over control terminal (63) connected to the second contact terminal (52) of the third electronic interruption means (5); the fifth electronic interruption means (7) having the second contact terminal (72) connected to a sixth input pin (16) and the switch over control terminal (73) connected to a seventh input pin (17).

IPC Classes  ?

• H04N 5/335 - Transforming light or analogous information into electric information using solid-state image sensors [SSIS]
• H04N 5/3745 - Addressed sensors, e.g. MOS or CMOS sensors having additional components embedded within a pixel or connected to a group of pixels within a sensor matrix, e.g. memories, A/D converters, pixel amplifiers, shared circuits or shared components
• G01J 1/44 - Electric circuits

Abstract

The invention is a Hall effect magnetic sensor (1 ) suited to measure the intensity of a magnetic field (M), comprising a semiconductor substrate (2) subjected to doping on which the following elements are defined: two diodes arranged side by side; means (6) suited to inject minority charge carriers (100) and provided on the semiconductor substrate (2) along the axis of symmetry (X) defined between the two diodes (3), wherein the injector means (6) are configured to inject the minority charge carriers (100) in the semiconductor substrate (2) in such a way as to generate a diffusion current suited to flow under the two diodes (3); processing means (7) operatively connected to each output channel (32) of the two diodes (3) and configured to count the number of events induced by the minority charge carriers (100) on both of the diodes (3) during a pre-established time observation window (T) and to calculate the difference between the counts at the end of the observation time window (T). The Hall effect magnetic sensor (1 ) furthermore comprises a quenching circuit (5) connected in series to each one of the output channels (32) of the diodes (3) and the processing means (7) are operatively connected in an intermediate position between the output channels (32) and the quenching circuits (5).

IPC Classes  ?

• G01R 33/00 - Arrangements or instruments for measuring magnetic variables
• G01R 33/07 - Hall-effect devices

Abstract

The invention is a colour pixel (1) comprising a plurality of photodiodes (2) reversely polarized by means of an electrical connection to a voltage source (Vres), a colour filter (3) superimposed to the plurality of photodiodes (2) to differentiate the wavelength of the light radiation incident on each photodiode (2), and a processing unit (5) operatively connected to the plurality of photodiodes (2) and configured to receive as an input the signals (20, 21, 22) generated by the photodiodes (2). The processing unit (5) is furthermore configured to determine and present as an output the normalized value (30, 31, 32) of at least one of the signals (20, 21, 22) with respect to the overall sum of the signals (20, 21, 22) generated by the plurality of photodiodes (2).

IPC Classes  ?

• H04N 9/04 - Picture signal generators
• H04N 5/378 - Readout circuits, e.g. correlated double sampling [CDS] circuits, output amplifiers or A/D converters
• H04N 5/3745 - Addressed sensors, e.g. MOS or CMOS sensors having additional components embedded within a pixel or connected to a group of pixels within a sensor matrix, e.g. memories, A/D converters, pixel amplifiers, shared circuits or shared components
• H04N 5/374 - Addressed sensors, e.g. MOS or CMOS sensors

Abstract

A solid-state photomultiplier device comprising a surface (2) sensitive to photons (F) provided on a semiconductor substrate (3) and provided with a plurality of light sensitive microcells (4) divided into a plurality of sub-groups arranged one after the other according to a pre-established trajectory. The device comprises a plurality of current dividers (7), each of which is electrically connected to at least one of the sub-groups, and where each of the current dividers (7) comprises a first resistor (71) and a second resistor (72) to implement a current partition of the resistive type. The first resistors (71) and the second resistors (72) respectively have a gradually descending and gradually increasing conductance value in proportion to the position along the pre-established trajectory of the sub-group to which each of the current dividers (7) is electrically connected. The device also comprises a first output channel (10) electrically connected to one end of the first resistors (71) and a second output channel (11) electrically connected to one end of the second resistors (72).

IPC Classes  ?

• G01T 1/208 - Circuits specially adapted for scintillation detectors, e.g. for the photo-multiplier section
• G01T 1/24 - Measuring radiation intensity with semiconductor detectors

Abstract

The invention is a solid-state photomultiplier device (SiPM) (1) for detecting one or more photons (F), comprising a sensitive surface (2) created on a semiconductor substrate (3), wherein the sensitive surface (2) is defined by a plurality of light sensitive microcells (4) connected to one another in parallel in such a way as to send out a common analog output signal (Sout), each one of the light sensitive microcells (4) comprising an avalanche photodiode (5) interposed between a first electrode (6) and a second electrode (7) suited to supply a reverse polarization voltage to the avalanche photodiode (5). The device is provided, for each one of the light sensitive microcells (4), with an interruption component (8) suited to interrupt electric continuity and interposed between the accumulation terminal (53) that accumulates the avalanche charge of the avalanche photodiode (5) and the first electrode (6). The interruption components (8) of the plurality of light sensitive microcells (4) are configured in such a way as to simultaneously switch over from a state of conduction to a state of inhibition or vice versa.

IPC Classes  ?

• H01L 27/144 - Devices controlled by radiation
• H01L 27/146 - Imager structures

Abstract

The invention relates to an alpha particles detector comprising a semiconductor substrate (20), a matrix (100) of pixels (11) formed in the semiconductor substrate (20) and a plurality of bipolar transistors (110) having base regions (2) and emitter regions (3) formed in every pixel (11), the semiconductor substrate (20) being configured as a common collector for all the transistors (110).

IPC Classes  ?

• G01T 1/178 - Circuit arrangements not adapted to a particular type of detector for measuring specific activity in the presence of other radioactive substances, e.g. natural, in the air or in liquids such as rain-water
• G01T 1/29 - Measurement performed on radiation beams, e.g. position or section of the beamMeasurement of spatial distribution of radiation
• H01L 31/115 - Devices sensitive to very short wavelength, e.g. X-rays, gamma-rays or corpuscular radiation

Abstract

The present invention concerns a hydrophilic polymer surface preferably having a contact angle smaller than 20°. The surface comprises gold. The invention also concerns a process for the production of such a surface, comprising the following steps: a) preparation of a polymer surface; b) preferably cleaning of the polymer surface; and c) treatment of the preferably cleaned surface with a plasma treatment in combination with a cathode spray with a gold target. The description concerns also the use of the process to give anti-fogging and anti-light scattering characteristics to optical elements and items comprising said hydrophilic polymer surface.

IPC Classes  ?

• C23C 14/08 - Oxides
• C23C 14/20 - Metallic material, boron or silicon on organic substrates
• C23C 14/00 - Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material

Abstract

A computer-implemented method for determining a configuration of a plurality of components in a systems installation which satisfies one or more constraints.

IPC Classes  ?

• G06F 17/50 - Computer-aided design
• G06T 19/00 - Manipulating 3D models or images for computer graphics

Abstract

The invention concerns an X-ray diffractometer (1) having Bragg-Brentano geometry in the theta-theta configuration for the crystallographic characterization of samples (C) of solid materials, powders and/or liquid samples subjected to analysis, which includes: a tubular supporting body (4) which is associated with a flange (8) provided with a circular through hole (9) and defined by two opposing walls (10, 11) to which a first and a second annular bearings (12, 13) are respectively associated; two tubular shafts (14, 15), each of which is supported during its rotation by the two annular bearings (12, 13), one of the tubular shafts (14) being arranged so that it passes through the flange (8) and is internally coaxial with the second tubular shaft (15) so that they both have their free end (141, 151) protruding from the same side of the supporting body (4); two direct drive servo operated motors (16, 17), annular in shape, each of which is suited to set one of the two tubular shafts (14, 15) rotating around the common axis (x); an X-ray emitter unit (2) and a unit (3) suited to detect the X-rays diffracted from the sample (C), each of which is associated with one of the free ends (141, 151) of the tubular shafts (14, 15), in such a way as to define the goniometric axis theta1 and the goniometric axis theta2 of the diffractometer (1) that are coaxial to each other and rotate independently.

IPC Classes  ?

• G01N 23/207 - Diffractometry, e.g. using a probe in a central position and one or more displaceable detectors in circumferential positions

Abstract

The method for efficient target detection from images robust to occlusion disclosed by the present invention detects the presence and spatial location of a number of objects in images. It consists in (i) an off-line method to compile an intermediate representation of detection probability maps that are then used by (ii) an on-line method to construct a detection probability map suitable for detecting and localizing objects in a set of input images efficiently. The method explicitly handles occlusions among the objects to be detected and localized, and objects whose shape and configuration is provided externally, for example from an object tracker. The method according to the present invention can be applied to a variety of objects and applications by customizing the method's input functions, namely the object representation, the geometric object model, its image projection method, and the feature matching function.

IPC Classes  ?

• H04N 5/235 - Circuitry for compensating for variation in the brightness of the object
• H04N 5/228 - Circuit details for pick-up tubes

Abstract

There is described a method for managing information to actively support the definition of new process flows, in particular in the field of micro- and nanotechnology devices typically developed in cleanroom laboratories where one or more production batches can be executed according to one reference process flow. With the use of this method it is possible to store information suited to trace the reliability and the evolution of technological recipes used into one or more production batches based on a given reference process flow. Thanks to these storing and tracing capabilities, the method addresses the selection of appropriate and reliable recipes while designing new process flows, thus favoring the definition of highly reliable new processes. The method is general and transparent with respect to different recipe types, recipe structures and technologies.

IPC Classes  ?

• G05B 19/418 - Total factory control, i.e. centrally controlling a plurality of machines, e.g. direct or distributed numerical control [DNC], flexible manufacturing systems [FMS], integrated manufacturing systems [IMS] or computer integrated manufacturing [CIM]

Abstract

The apparatus (1) for obtaining electricity from solar energy is made up of heating means (2) for heating a thermo- vector fluid, which comprise at least a solar collector (2), a machine (3) of reciprocating type which is suitable for transforming the energy of the thermo-vector fluid into mechanical energy and which is associable with the heating means (2) by the interposition of connection (12, 19) means through which the thermo-vector fluid flows, and a transformation mechanism (10) for transforming the mechanical energy into electricity associable with the machine.

IPC Classes  ?

• F03G 6/04 - Devices for producing mechanical power from solar energy using a single state working fluid gaseous
• F03G 6/06 - Devices for producing mechanical power from solar energy with solar energy concentrating means
• F02G 1/043 - Hot gas positive-displacement engine plants of closed-cycle type the engine being operated by expansion and contraction of a mass of working gas which is heated and cooled in one of a plurality of constantly communicating expansible chambers, e.g. Stirling cycle type engines
• F24D 17/00 - Domestic hot-water supply systems

Abstract

A method for tracking a number of objects or object parts in image sequences utilizes a Bayesian-like approach to object tracking, computing, at each time a new image is available, a probability distribution over all possible target configurations for that time. The Bayesian-like approach to object tracking computes a probability distribution for the previous image, at time (t−1), is propagated to the new image at time (t) according to a probabilistic model of target dynamics, obtaining a predicted distribution at time (t). The Bayesian-like approach to object tracking also aligns the predicted distribution at time (t) with the evidence contained in the new image at time (t) according to a probabilistic model of visual likelihood.

IPC Classes  ?

• G06K 9/00 - Methods or arrangements for reading or recognising printed or written characters or for recognising patterns, e.g. fingerprints

Goods & Services

Pre-recorded magnetic data carriers relating to scientific subjects. Paper, cardboard and goods made from these materials, not included in other classes; printed matter; bookbinding material; photographs; stationery; adhesives for stationery or household purposes; artists' materials; paint brushes; typewriters and office requisites (except furniture); instructional and teaching material (except apparatus); plastic materials for packaging (not included in other classes); printers' type; printing blocks. Telecommunications; Information about telecommunication; rental of telecommunication equipment; rental of telephones. Education, providing of training, conventions, events and seminars, publishing in the scientific sector, rental of pre-recorded magnetic data carriers containing scientific material, library services. Services in the field of science and technology, such as related research and development services; industrial analysis and research; design and development ofcomputer hardware and software.

Goods & Services

Pre-recorded magnetic data carriers relating to scientific subject matter, none of the aforesaid goods being used with reference to motorcycling competitions and sporting events in general. Paper, cardboard and goods made from these materials, not included in other classes; printed matter; bookbinding material; photographs; stationery; adhesives for stationery or household purposes; artists' materials; paint brushes; typewriters and office requisites (except furniture); instructional and teaching material (except apparatus); plastic materials for packaging (not included in other classes); printers' type; printing blocks. Telecommunications expressly excluding services relating to motorcycling competitions and sporting events in general. Education and providing of training, conventions, events and seminars, publishing in the field of science, rental of pre-recorded magnetic data carriers containing scientific material, lending libraries, none of the aforesaid services being provided in the field of plastic materials and polymers and none of the aforesaid services being provided in relation to motorcycling competitions and sporting events in general. Services in the field of science and technology, such as related research and development services; industrial analysis and research; design and development of computers and computer programs, none of the aforesaid services being provided in the field of plastic materials and polymers.

Goods & Services

Pre-recorded magnetic data carriers relating to scientific subjects. Paper, cardboard and goods made from these materials, not included in other classes; printed matter; bookbinding material; photographs; stationery; adhesives for stationery or household purposes; artists' materials; paint brushes; typewriters and office requisites (except furniture); instructional and teaching material (except apparatus); plastic materials for packaging (not included in other classes); printers' type; printing blocks. Telecommunications. Education, providing of training, conventions, events and seminars, publishing in the scientific sector, rental of pre-recorded magnetic data carriers containing scientific material, library services. Services in the field of science and technology, such as related research and development services; industrial analysis and research; design and development ofcomputer hardware and software.

Goods & Services

Scientific, nautical, surveying, photographic, cinematographic, optical, weighing, measuring, signalling, checking (supervision), life-saving and teaching apparatus and instruments; apparatus and instruments for conducting, switching, transforming, accumulating, regulating or controlling electricity; apparatus for recording, transmission or reproduction of sound or images; magnetic data carriers, recording discs; automatic vending machines and mechanisms for coin-operated apparatus; cash registers, calculating machines, data processing equipment and computers; fire-extinguishing apparatus. Paper, cardboard and goods made from these materials, not included in other classes; printed matter; bookbinding material; photographs; stationery; adhesives for stationery or household purposes; artists' materials; paint brushes; typewriters and office requisites (except furniture); instructional and teaching material (except apparatus); plastic materials for packaging (not included in other classes); printers' type; printing blocks. Advertising; business management; business administration; office functions. Telecommunications. Education; providing of training; entertainment; sporting and cultural activities. Scientific and technological services and research and design relating thereto; industrial analysis and research services; design and development of computer hardware and software. Legal services; security services for the protection of property and individuals; personal and social services rendered by others to meet the needs of individuals.

Abstract

The present application relates to a system, apparatus and method for feedback-controlling a sensor array. The apparatus includes an imaging sensor unit comprising: a sensor module including a plurality of photosensors; a memory module coupled to the sensor module, the memory module configured to receive a sensor output from the sensor module; a local control module coupled to the sensor module, the local control module configured to: receive a local feedback signal from the sensor module; receive a global feedback signal; and use the local feedback signal and the global feedback signal to control the memory module to store the sensor output.

IPC Classes  ?

• H04N 5/353 - Control of the integration time
• H04N 5/3745 - Addressed sensors, e.g. MOS or CMOS sensors having additional components embedded within a pixel or connected to a group of pixels within a sensor matrix, e.g. memories, A/D converters, pixel amplifiers, shared circuits or shared components