Provided is a copper plating technique that enables the filing of high aspect-ratio via-holes and through-holes in semiconductor substrates such as silicon substrates, organic material substrates and ceramic substrates. The disclosed technique involves a copper plating method, a copper plating bath and copper plating additives that include a tertiary amine compound represented by general formula 1 (wherein the R1 moiety is a C2 - C30 glycol ether represented, the R2 moieties are hydrocarbons that form 5-membered rings, 6-membered rings or a 5- and a 6-membered ring and the R2 moieties may include a C3 - C8 unsaturated bond and may be substituted with nitrogen atoms or oxygen atoms) and/or a quaternary amine compound thereof.
C07D 295/08 - Composés hétérocycliques contenant des cycles polyméthylène imine d'au moins cinq chaînons, des cycles aza-3 bicyclo [3.2.2] nonane, piperazine, morpholine ou thiomorpholine, ne comportant que des atomes d'hydrogène liés directement aux atomes de carbone du cycle avec des radicaux hydrocarbonés substitués liés aux atomes d'azote du cycle substitués par des atomes d'oxygène ou de soufre liés par des liaisons simples
C25D 3/38 - Dépôt électrochimiqueBains utilisés à partir de solutions de cuivre
C25D 7/00 - Dépôt électrochimique caractérisé par l'objet à revêtir
Provided is a copper plating technique that enables the filling of high aspect-ratio via-holes and through-holes in semiconductor substrates such as silicon substrates, organic material substrates or ceramic substrates. The disclosed technique involves a copper plating method, a copper plating bath and copper plating additives that include a tertiary amine compound, which is obtained by reacting a heterocyclic compound with the epoxy group of a glycidyl ether group of a compound that has three or more glycidyl ether groups, and/or a quaternary amine compound thereof.
C07D 295/08 - Composés hétérocycliques contenant des cycles polyméthylène imine d'au moins cinq chaînons, des cycles aza-3 bicyclo [3.2.2] nonane, piperazine, morpholine ou thiomorpholine, ne comportant que des atomes d'hydrogène liés directement aux atomes de carbone du cycle avec des radicaux hydrocarbonés substitués liés aux atomes d'azote du cycle substitués par des atomes d'oxygène ou de soufre liés par des liaisons simples
C25D 3/38 - Dépôt électrochimiqueBains utilisés à partir de solutions de cuivre
C25D 7/00 - Dépôt électrochimique caractérisé par l'objet à revêtir
Disclosed is a technique for carrying out electroless nickel plating, electroless palladium plating and electroless gold plating on a high density copper wiring pattern, which is formed by a semi-additive method, without forming bridges on a base resin. Specifically disclosed is a method for producing a printed wiring board, which is characterized in that: a printed wiring substrate that is provided with a copper wiring pattern by a semi-additive method is processed with a catalyst removal liquid that contains nitric acid, chlorine ions and a cationic polymer; then the resulting printed wiring substrate is processed with a bridge prevention liquid that contains a sulfur-containing organic material; and after that electroless nickel plating, electroless palladium plating and electroless gold plating are carried out thereon.
H05K 3/18 - Appareils ou procédés pour la fabrication de circuits imprimés dans lesquels le matériau conducteur est appliqué au support isolant de manière à former le parcours conducteur recherché utilisant la technique de la précipitation pour appliquer le matériau conducteur
H05K 3/06 - Élimination du matériau conducteur par voie chimique ou électrolytique, p. ex. par le procédé de photo-décapage
A process for producing a two-layer flexible copper-clad laminate substrate by wet plating using an acidic copper plating bath composition and a resin film coated with a conductive metal serving as a seed layer. The process for two-layer FCCL production includes: a step in which a seed layer is formed by electroless nickel plating on a hydrophilized surface of a resin film; and a step in which this resin film is subjected, without performing primary copper plating, to wet electroplating in the acidic copper plating bath composition to thickly deposit a conductive copper layer on the seed layer.
There are provided technologies for adsorbing a catalyst metal selectively to an anionic group such as a carboxyl group, thereby forming a metal film on a nonconductive resin selectively, including a palladium complex represented by the following formula (I):
wherein L represents an alkylene group and R represents an amino group or a guanidyl group, or a structural isomer thereof, a processing solution for electroless plating catalyst application containing the complex as an active component, and a method for forming a metal plated film on a nonconductive resin, containing subjecting a nonconductive resin having a surface anionic group to a catalyst adsorbing treatment using the processing solution and then to a reduction treatment, electroless metal plating, and metal electroplating.
This invention provides a method for containing an insulating resin, which can enhance the adhesion between a metallic film and an insulating resin by a simple method in the formation of a metallic film on a smooth insulating resin, and a method for metallizing an insulating resin utilizing this method. The method is characterized in that, after the hydrophilization of the insulating resin, the resin is treated with a solution containing a polymer having a primary amine or a secondary amine or both the primary or secondary amines on its side chain.
An RF coil (23) is arranged between a target (11) and a work (W), and sputtering particles scattering from the target (11) toward the work (W) are ionized to positive ions when the RF coil (23) is supplied with high frequency power. The work (W) or the work holder (8) holding the work (W) are negatively biased by a bias power supply (26), and the ionized sputtering particles are attracted. A current flowing in the bias power supply (26) is controlled not to have the adhered sputtering particles immediately become electrically neutral.
Provided is a sputtering technology for uniformly forming a film with sputter particles even on a work having a complicated three-dimensional shape. The film is formed on the three-dimensional work, which is attached to a rotating carousel-type work holder arranged to face the target, by sputtering the target. The three-dimensional work is rotated by means of a shaft arranged within a surface vertical to a surface which connects the target and the rotating shaft of the carousel-type work holder. At least for a partial time during the total sputtering time, the main scattering direction of the spatter particles scattering from the target is permitted to be a direction decentered from the center direction of the rotating shaft of the carousel-type work holder.
Provided is a sputtering apparatus which suppresses entry of thermal electrons into a work and does not cause problems such as work deformation due to heat, even at the time of forming a film on materials, such as plastic, having a low heat resistance. The apparatus is provided with a target and a carousel-type work holder arranged to face the target with a rotating shaft, in a vacuum chamber. The carousel-type work holder has a work holder supporting section and a plurality of work holding sections. The work holding section is arranged at the outer circumfernce of the work holder supporting section. The carousel-type work holder and/or the work holding section is rotatably arranged by a shaft arranged within a surface vertical to a surface connecting the target and the rotating shaft of the carousel-type work holder. Inside the carousel-type work holder, a thermal electron capturing member is arranged.
A main rotating section (15) which rotates with a main shaft (13) at the center is provided with a plurality of sub-rotating sections (16), and each sub-rotating section (16) has a plurality of work holders (17). A work (W) held by the work holder (17) rotates on its own rotating shaft (46), while rotating with the main shaft (13) at the center and rotating with a sub-shaft (36) at the center by rotation of the main rotating section (15) and sub-rotating sections (16). Films are formed by making surfaces of the works (W) sequentially face a target (23).
On a first film forming stage (8) in a vacuum tank (3), a sputtering apparatus (10), which constitutes a sputtering apparatus, is arranged. On a second film forming stage (9), a deposition apparatus (11) is arranged. Sputtering step of forming a thin film is performed by operating the sputtering apparatus (10), while rotating a carousel (4). After the sputtering step, a thin film is further formed by operating the deposition apparatus (11). In the sputtering step, the deposition apparatus (11) is cooled so that a deposition material does not evaporate nor sublime.
C23C 14/22 - Revêtement par évaporation sous vide, pulvérisation cathodique ou implantation d'ions du matériau composant le revêtement caractérisé par le procédé de revêtement
Disclosed is a laminated polyimide substrate in which the adhesion between a polyimide film and a metal layer is kept at a satisfactory level, whose deterioration with time under severe conditions is prevented effectively, and in which various properties are retained and/or imparted. Also disclosed is a method for producing the laminated polyimide substrate. Specifically disclosed is a laminated polyimide substrate comprising a polyimide layer, an alkali-treated layer derived from the polyimide layer, and a metal layer arranged in this order, wherein the alkali-treated layer has an anionic functional group and has a laminated structure composed of a layer arranged on the side facing the metal layer and containing a catalyst metal and a layer arranged on the side facing the polyimide layer and containing a complex of the catalyst metal.
B32B 15/088 - Produits stratifiés composés essentiellement de métal comprenant un métal comme seul composant ou comme composant principal d'une couche adjacente à une autre couche d'une substance spécifique de résine synthétique comprenant des polyamides
H05K 3/38 - Amélioration de l'adhérence entre le substrat isolant et le métal
13.
ETCHING SOLUTION, AND METHOD FOR METALLIZATION OF PLASTIC SURFACE EMPLOYING THE METHOD
Disclosed is an etching solution which is highly effective for modifying various plastic materials, has high bath stability, and can be used for the metallization of a plastic surface on an industrial scale. The etching solution comprises a permanganic acid salt and a periodic acid salt or a salt thereof, and has a pH value of 2.0 or lower.
C23C 18/24 - Pré-traitement du matériau à revêtir de surfaces organiques, p. ex. de résines pour rendre la surface rugueuse, p. ex. par décapage au moyen de solutions aqueuses acides
C09K 13/04 - Compositions pour l'attaque chimique, la gravure, le brillantage de surface ou le décapage contenant un acide inorganique
C25D 5/56 - Dépôt électrochimique sur des surfaces non métalliques de matières plastiques
The invention aims at providing a practical process for chrome-free metallization of plastic surfaces by which a plating film adhering tightly to the surface of a plastics part can be formed and which is free from the deposition on a jig. A process for the metallization of plastic surfaces which is characterized by treating a plastics part with an etching fluid containing both a permanganate and an inorganic acid, treating the resulting plastics part with a potentiator fluid for the impartment of a catalyst which contains a compound exhibiting selective adsorption to functional groups exposed on the surface of the plastics part, imparting a catalyst to the treated plastics part with a catalyst imparting fluid, and then subjecting the resulting plastics part to metal plating.
Simple means for unfailing prevention of whisker occurrence even when leaving is made at room temperature for 5000 hr after tin or tin alloy plating. There is provided a whisker preventive agent for tin or tin alloy plating, comprising (A) sulfuric acid, an alkanesulfonic acid, an alkanolsulfonic acid and derivative thereof, (B) a peroxide and (C) ions of a metal noble in potential to copper. Further, there is provided a method of whisker prevention for tin or tin alloy plating, characterized in that after immersion of a material to be plated in the above whisker preventive agent for tin or tin alloy plating, tin or tin alloy plating is carried out.
A surface modification liquid for plastic that in pretreatment for metallization of a plastic surface by metal plating, solves the problems of etching treatment with the use of conventional etchant containing chromic acid, etc. There is provided a surface modification liquid for plastic characterized by containing permanganic acid, phosphoric acid and nitric acid.
C23C 18/24 - Pré-traitement du matériau à revêtir de surfaces organiques, p. ex. de résines pour rendre la surface rugueuse, p. ex. par décapage au moyen de solutions aqueuses acides
C08J 7/14 - Modification chimique par des acides, leurs sels ou anhydrides
C25D 5/00 - Dépôt électrochimique caractérisé par le procédéPrétraitement ou post-traitement des pièces
C25D 5/56 - Dépôt électrochimique sur des surfaces non métalliques de matières plastiques
17.
PALLADIUM COMPLEX AND CATALYST-IMPARTING TREATMENT SOLUTION USING THE SAME
The object is to provide a technique for forming a selective metal coating film on a non-conductive resin by allowing a catalyst metal to adsorb selectively onto an anionic group (e.g., a carboxyl group) on the resin. Thus, disclosed are: a palladium complex represented by the formula (I) below or a structural isomer thereof; a catalyst-imparting treatment solution for electroless plating, comprising the palladium complex or the isomer as an active ingredient; and a method for formation of a metal plating coating film on a non-conductive resin, comprising the steps of subjecting a non-conductive resin having an anionic group formed on its surface to a catalyst-imparting treatment with the catalyst-imparting treatment solution and then performing reduction treatment, electroless metal plating and electrolytic plating. (I) wherein L represents an alkylene group; and R represents an amino group or a guanidyl group.
C07C 229/08 - Composés contenant des groupes amino et carboxyle liés au même squelette carboné ayant des groupes amino et carboxyle liés à des atomes de carbone acycliques du même squelette carboné le squelette carboné étant acyclique et saturé ayant un seul groupe amino et un seul groupe carboxyle liés au squelette carboné l'atome d'azote du groupe amino étant lié de plus à des atomes d'hydrogène
C07C 229/22 - Composés contenant des groupes amino et carboxyle liés au même squelette carboné ayant des groupes amino et carboxyle liés à des atomes de carbone acycliques du même squelette carboné le squelette carboné étant acyclique et saturé le squelette carboné étant substitué de plus par des atomes d'oxygène
C07C 229/24 - Composés contenant des groupes amino et carboxyle liés au même squelette carboné ayant des groupes amino et carboxyle liés à des atomes de carbone acycliques du même squelette carboné le squelette carboné étant acyclique et saturé ayant plus d'un groupe carboxyle lié au squelette carboné, p. ex. acide aspartique
C07C 229/26 - Composés contenant des groupes amino et carboxyle liés au même squelette carboné ayant des groupes amino et carboxyle liés à des atomes de carbone acycliques du même squelette carboné le squelette carboné étant acyclique et saturé ayant plus d'un groupe amino lié au squelette carboné, p. ex. lysine
C07C 279/14 - Dérivés de la guanidine, c.-à-d. composés contenant le groupe les atomes d'azote liés par des liaisons simples ne faisant pas partie de groupes nitro ou nitroso ayant des atomes d'azote de groupes guanidine liés à des atomes de carbone acycliques d'un squelette carboné étant substitué de plus par des groupes carboxyle
C07F 15/00 - Composés contenant des éléments des groupes 8, 9, 10 ou 18 du tableau périodique
brevets
