The present invention relates to a crucible with a cavity for growing a SiC volume mono crystal by sublimation growth in a direction of growth (Y). The crucible comprises an end wall (110) with a seed holder (112) for holding a SiC seed crystal in the cavity, the end wall (110) extending in a direction (r) perpendicular to the direction of growth (Y); a side wall (140) extending in the direction of growth (Y), the side wall (140) preventing permeation of a doping gas from an external into the cavity, the doping gas for doping the SiC volume mono crystal during the sublimation growth; and a diffusion region (114) allowing permeation of the doping gas from the external in the cavity, wherein the diffusion region (114) is located between the seed holder (112) and an edge (142) of the side wall (140).
An arrangement for growing a SiC volume monocrystal in a cavity (110) by sublimation growth in the direction of growth (Y) includes a susceptor (100) for absorbing electromagnetic energy and heating the cavity (110). An insulator (200) surrounds the susceptor (100) to thermally insulate it from the exterior. The insulator (200) features a thermal insulation wall (202) that reduces radial heat transfer (r) from the susceptor (100). A thermally conductive layer (210) is positioned between the susceptor (100) and the thermal insulation wall (202) to distribute heat and minimize or reduce thermal conduction to the insulator (200), enhancing the insulator's reflectivity and reducing waviness.
Method for Producing a Bulk SiC Single Crystal with Improved Quality Using a SiC Seed Crystal with a Temporary Protective Oxide Layer, and SiC Seed Crystal with Protective Oxide Layer
The present invention relates to a silicon carbide substrate for use as a crystal seed, comprising a monocrystalline silicon carbide disk covered with a protective oxide layer. The protective oxide layer is intended to be removed to expose an ideal, clean surface of the monocrystalline silicon carbide disk. The present invention also relates to a method of producing at least one bulk silicon carbide single-crystal by sublimation growth using the silicon carbide substrate with protective oxide layer as a seed crystal. The protective oxide layer is removed from the seed crystal surface to expose the underlying monocrystalline silicon carbide disk by a back-etching process performed in-situ in the crystal growth crucible, i.e. after the seed crystal is arranged inside the growth crucible and before the sublimation deposition on the growth surface starts.
C30B 33/00 - Post-traitement des monocristaux ou des matériaux polycristallins homogènes de structure déterminée
C30B 33/12 - Gravure dans une atmosphère gazeuse ou un plasma
C30B 35/00 - Appareillages non prévus ailleurs, spécialement adaptés à la croissance, à la production ou au post-traitement de monocristaux ou de matériaux polycristallins homogènes de structure déterminée
4.
METHOD AND APPARATUS FOR THE THERMAL POST-TREATMENT OF AT LEAST ONE SIC VOLUME MONOCRYSTAL
Thermal post-treatment of a silicon carbide (SiC) volume monocrystal which has a substantially cylindrical basic shape with a crystal length in an axial direction, a crystal diameter in a radial direction, a crystal central longitudinal axis extending in the axial direction, and with three boundary surfaces, namely, a bottom surface, a top surface and a circumferential edge surface. The SiC volume monocrystal is brought to a post-treatment temperature in order to reduce mechanical stresses present in the SiC volume monocrystal after completion of the previous growth, wherein an inhomogeneous temperature profile with a radial thermal gradient is set in the SiC volume monocrystal, which rises continuously from the crystal central longitudinal axis to the circumferential edge surface, and a heat exchange of the SiC volume monocrystal with a surrounding free space takes place via free heat radiation on at least two of the three boundary surfaces.
The present invention relates to systems and methods for growing bulk semiconductor single crystals, and more specifically, for growing bulk semiconductor single crystals, such as silicon carbide, based on physical vapor transport. The sublimation system comprises a crucible (202) having a longitudinal axis (212) and a sidewall (218) extending along the longitudinal axis (212), wherein the crucible (202) comprises a fixing means for at least one seed crystal (210) and at least one source material compartment (204) for containing a source material (208); and a heating system for generating a temperature field around a circumference of the crucible (202) along the longitudinal axis (212) of the crucible (202); a thermally insulating unit (214) arranged within the source material compartment (204) at the sidewall (218) of the crucible (202).
C30B 35/00 - Appareillages non prévus ailleurs, spécialement adaptés à la croissance, à la production ou au post-traitement de monocristaux ou de matériaux polycristallins homogènes de structure déterminée
6.
Sublimation System And Method Of Growing At Least One Single Crystal
The present invention relates to systems and methods for growing bulk semiconductor single crystals, and more specifically, for growing bulk semiconductor single crystals, such as silicon carbide, based on physical vapor transport. The sublimation system comprises a crucible (102) having a longitudinal axis (120) and a sidewall (116) extending along the longitudinal axis (120), wherein the crucible comprises a fixing means for at least one seed crystal (110) and at least one source material compartment (104) for containing a source material (108), and a heating system being formed to generate a temperature field around a circumference of the crucible along the longitudinal axis of the crucible, wherein the crucible (102) comprises at least one first heat radiation cavity (118), which is arranged opposite to the fixing means and adjacent to the source material compartment (104), the first heat radiation cavity (118) being closed on all of its sides.
The present invention relates to systems and methods for growing bulk semiconductor single crystals, and more specifically, for growing a bulk semiconductor single crystals, such as silicon carbide, based on physical vapor transport. A sublimation system for growing at least one single crystal of a semiconductor material by means of a sublimation growing process comprises a crucible (102) having a longitudinal axis (120) and comprising a fixing means for at least one seed crystal (110) and at least one source material compartment (104) for containing a source material (108); a heating system being formed to generate an irregular temperature field around a circumference of the crucible (102) and/or along the longitudinal axis of the crucible (102); a thermal insulation unit (117) at least partly surrounding the crucible (102), wherein the thermal insulation unit (117) has a radially and/or axially asymmetric form to compensate the irregular temperature field.
The present invention relates to systems and methods for growing bulk semiconductor single crystals, and more specifically, for growing a bulk semiconductor single crystals, such as silicon carbide, based on physical vapor transport. A sublimation system for growing at least one single crystal of a semiconductor material by means of a sublimation growing process comprises a crucible (102) having a longitudinal axis (120) and comprising a fixing means for at least one seed crystal (110) and at least one source material compartment (104) for containing a source material (108); a heating system being formed to generate an irregular temperature field around a circumference of the crucible at one or more defined heights along the longitudinal axis of the crucible; a rotary drive that is operable to cause a rotational movement of the fixing means around the longitudinal axis relative to the heating system.
METHOD FOR PRODUCING A BULK SIC SINGLE CRYSTAL WITH IMPROVED QUALITY USING A SIC SEED CRYSTAL WITH A TEMPORARY PROTECTIVE OXIDE LAYER, AND SIC SEED CRYSTAL WITH PROTECTIVE OXIDE LAYER
The present invention relates to a silicon carbide substrate for use as a crystal seed, comprising a monocrystalline silicon carbide disk covered with a protective oxide layer. The protective oxide layer is intended to be removed to expose an ideal, clean surface of the monocrystalline silicon carbide disk. The present invention also relates to a method of producing at least one bulk silicon carbide single-crystal by sublimation growth using the silicon carbide substrate with protective oxide layer as a seed crystal. The protective oxide layer is removed from the seed crystal surface to expose the underlying monocrystalline silicon carbide disk by a back-etching process performed in-situ in the crystal growth crucible, i.e. after the seed crystal is arranged inside the growth crucible and before the sublimation deposition on the growth surface starts.
An SiC volume monocrystal is processed by sublimation growth. An SiC seed crystal is placed in a crystal growth region of a growing crucible and SiC source material is introduced into an SiC storage region. During growth, at a growth temperature of up to 2,400° C. and a growth pressure between 0.1 mbar and 100 mbar, an SiC growth gas phase is generated by sublimation of the SiC source material and by transport of the sublimated gaseous components into the crystal growth region, where an SiC volume monocrystal grows by deposition from the SiC growth gas phase on the SiC seed crystal. A mechanical stress is introduced into the SiC seed crystal at room temperature prior to the start of the growth to cause seed screw dislocations present in the SiC seed crystal to undergo a dislocation movement so that seed screw dislocations recombine.
A SiC volume monocrystal is produced by sublimation growth. An SiC seed crystal is placed in a crystal growth region of a growing crucible and SiC source material is introduced into an SiC storage region. During growth, at a growth temperature of up to 2,400° C. and a growth pressure between 0.1 mbar and 100 mbar, an SiC growth gas phase is generated by sublimation of the SiC source material and by transport of the sublimated gaseous components into the crystal growth region, where an SiC volume monocrystal grows by deposition from the SiC growth gas phase on the SiC seed crystal. Prior to the start of growth, the SiC seed crystal is examined at the growth surface for the presence of seed screw dislocations, nucleation centers are generated, wherein the nucleation centers are starting points for at least one compensation screw dislocation during the growth carried out subsequently.
Crystal structure orientation in semiconductor semi-finished products and semiconductor substrates for fissure reduction and method of setting same The present invention provides monocrystalline semiconductor semi-finished product and substrates having a predetermined orientation of its crystal structure relative to a central axis and a at least partially curved lateral surface of the semi-finished product or substrate that reduces or even eliminates the occurrence of cracks during mechanical processing, and a method of producing such semiconductor semi-finished products and/or substrates. In the predetermined orientation, a first crystallographic axis perpendicular to a set of first cleavage planes makes a first tilt angle with a plane transverse to the central axis, and a second crystallographic axis perpendicular to a set of second cleavage planes and to the first crystallographic axis makes a second tilt angle with said plane transverse to the central axis so that each set of parallel cleavage planes that are symmetrically equivalent to either the first or second cleavage planes are inclined relative to the central axis.
The present invention provides a monocrystalline SiC substrate with an asymmetric shape for enhancing substrate stiffness against thermal induced deformations, the substrate comprising: a main region, and an asymmetric region located at a peripheral region of the substrate and adjacent to the main region, wherein the asymmetric region is inclined inwards, relative to the main region, to provide an asymmetric shape to the substrate. The present invention also provides a method of producing one or more substrates with an asymmetric shape, comprising: performing a multi-wire sawing process in which one or more substrates are cut with an wire-sawing web from an ingot placed on a stage, and cutting the one or more substrates with the asymmetric shape by controlling a relative movement between the wire-sawing web and the stage, the relative movement causing the wire-sawing web to describe a non-linear sawing path across the ingot to cut the asymmetric shape.
C30B 33/00 - Post-traitement des monocristaux ou des matériaux polycristallins homogènes de structure déterminée
B28D 5/04 - Travail mécanique des pierres fines, pierres précieuses, cristaux, p. ex. des matériaux pour semi-conducteursAppareillages ou dispositifs à cet effet par outils autres que ceux du type rotatif, p. ex. par des outils animés d'un mouvement alternatif
B28D 5/00 - Travail mécanique des pierres fines, pierres précieuses, cristaux, p. ex. des matériaux pour semi-conducteursAppareillages ou dispositifs à cet effet
H01L 29/16 - Corps semi-conducteurs caractérisés par les matériaux dont ils sont constitués comprenant, mis à part les matériaux de dopage ou autres impuretés, seulement des éléments du groupe IV de la classification périodique, sous forme non combinée
14.
SILICON CARBIDE SUBSTRATE AND METHOD OF GROWING SiC SINGLE CRYSTAL BOULES
The present invention relates to a silicon carbide (SiC) substrate with improved mechanical and electrical characteristics. Furthermore, the invention relates to a method for producing a bulk SiC crystal in a physical vapor transport growth system. The silicon carbide substrate comprises an inner region (102) which constitutes at least 30% of a total surface area of said substrate (100), a ring shaped peripheral region (104) radially surrounding the inner region (102), wherein a mean concentration of a dopant in the inner region (102) differs by at least 1·1018 cm−3 from the mean concentration of this dopant in the peripheral region (104).
A method for simultaneously manufacturing more than one single crystal of a semiconductor material by physical vapor transport (PVT) includes connecting a pair of reactors to a vacuum pump system by a common vacuum channel and creating and/or controlling, with the vacuum pump system, a common gas phase condition in the inner chambers of the pair of reactors. Each reactor has an inner chamber adapted to accommodate a PVT growth structure for growth of a semiconductor single crystal.
C30B 35/00 - Appareillages non prévus ailleurs, spécialement adaptés à la croissance, à la production ou au post-traitement de monocristaux ou de matériaux polycristallins homogènes de structure déterminée
16.
CHAMFERED SILICON CARBIDE SUBSTRATE AND METHOD OF CHAMFERING
The present invention relates to a chamfered silicon carbide substrate which is essentially monocrystalline, and to a corresponding method of chamfering a silicon carbide substrate. A silicon carbide substrate according to the invention comprises a main surface (102), wherein an orientation of said main surface (102) is such that a normal vector ({right arrow over (O)}) of the main surface (102) includes a tilt angle with a normal vector ({right arrow over (N)}) of a basal lattice plane (106) of the substrate, and a chamfered peripheral region (110), wherein a surface of the chamfered peripheral region includes a bevel angle with said main surface, wherein said bevel angle is chosen so that, in more than 75% of the peripheral region, normal vectors ({right arrow over (F)}_i) of the chamfered peripheral region (110) differ from the normal vector of the basal lattice plane by less than a difference between the normal vector of the main surface and the normal vector of the basal lattice plane of the substrate.
H01L 29/04 - Corps semi-conducteurs caractérisés par leur structure cristalline, p.ex. polycristalline, cubique ou à orientation particulière des plans cristallins
H01L 29/16 - Corps semi-conducteurs caractérisés par les matériaux dont ils sont constitués comprenant, mis à part les matériaux de dopage ou autres impuretés, seulement des éléments du groupe IV de la classification périodique, sous forme non combinée
H01L 29/34 - Corps semi-conducteurs ayant des surfaces polies ou rugueuses les défectuosités étant sur la surface
The present invention provides a monocrystalline SiC substrate with an asymmetric shape for enhancing substrate stiffness against thermal induced deformations, the substrate comprising: a main region, and an asymmetric region located at a peripheral region of the substrate and adjacent to the main region, wherein the asymmetric region is inclined inwards, relative to the main region, to provide an asymmetric shape to the substrate. The present invention also provides a method of producing one or more substrates with an asymmetric shape, comprising: performing a multi-wire sawing process in which one or more substrates are cut with an wire- sawing web from an ingot placed on a stage, and cutting the one or more substrates with the asymmetric shape by controlling a relative movement between the wire-sawing web and the stage, the relative movement causing the wire-sawing web to describe a non-linear sawing path across the ingot to cut the asymmetric shape.
C30B 33/00 - Post-traitement des monocristaux ou des matériaux polycristallins homogènes de structure déterminée
B28D 5/04 - Travail mécanique des pierres fines, pierres précieuses, cristaux, p. ex. des matériaux pour semi-conducteursAppareillages ou dispositifs à cet effet par outils autres que ceux du type rotatif, p. ex. par des outils animés d'un mouvement alternatif
B28D 5/00 - Travail mécanique des pierres fines, pierres précieuses, cristaux, p. ex. des matériaux pour semi-conducteursAppareillages ou dispositifs à cet effet
H01L 21/02 - Fabrication ou traitement des dispositifs à semi-conducteurs ou de leurs parties constitutives
18.
METHOD FOR PRODUCING AN SIC VOLUME SINGLE CRYSTAL, HOMOGENOUS SCREW DISLOCATION DISTRIBUTION, AND SIC SUBSTRATE
The method according to the invention is designed to produce at least one SiC volume single crystal (2) using a sublimation growth method. Prior to beginning the growth process, an SiC seed crystal (8) with a growth surface (18) is arranged in a crystal growth region of a culture crucible, and SiC source material is introduced into an SiC storage region of the culture crucible. During the growth process, an SiC growth gas phase is generated in the crystal growth region at a growth temperature of up to 2400 °C and a growth pressure between 0.1 mbar and 100 mbar by sublimating the SiC source material and transporting the sublimated gaseous components into the crystal growth region, an SiC volume single crystal (2) growing in said growth gas phase as a result of a precipitation from the SiC growth gas phase on the SiC seed crystal (8). Prior to beginning the growth process, the SiC seed crystal (8) on the growth surface (18) is examined for the presence of seed screw dislocations (20), wherein the growth surface (18) is divided into seed segments, a corresponding local screw dislocation seed segment density is ascertained for each seed segment, and the growth surface is processed such that nucleation centers (22) are generated in each seed segment having a local screw dislocation seed segment density that lies above a screw dislocation seed total density, which is ascertained for the entire growth surface (18), at least by a factor of 1.5 to 4. Each nucleation center (22) is a starting point for at least one respective compensation screw dislocation during the growth process which is then carried out.
The invention relates to a process for producing at least one SiC bulk single crystal (2) by means of a sublimation growing process, wherein, prior to starting the growing process, a SiC seed crystal (8) having a growth surface is arranged in a crystal growth region of a growing crucible and SiC source material is introduced into a SiC storage region of the growing crucible. During the growing process, at a growing temperature of up to 2400°C and a growing pressure between 0.1 mbar and 100 mbar, by means of sublimation of the SiC source material and by means of transporting the sublimated gaseous components into the crystal growth region, a SiC growth gas phase is generated therein, in which a SiC bulk single crystal (2) grows on the SiC seed crystal by means of precipitation out of the SiC growth gas phase. Prior to starting the growing process, at room temperature, a mechanical stress is introduced into the SiC seed crystal (8) in order to induce, under the influence of the mechanical stress, a dislocation movement in seed screw dislocations (24) present in the SiC seed crystal (8), such that seed screw dislocations (24), which move closer to one another in conjunction with their respective dislocation movement, recombine with one another and cancel one another out.
The present invention provides monocrystalline 4H—SiC substrates having a specific orientation of its crystal structure which is set such as to reduce or even eliminate the occurrence of cracks or fissures during mechanical processing, and method of producing same. The monocrystalline 4H—SiC substrate, which has a longitudinal axis and an at least partially curved lateral surface parallel to said longitudinal axis, is characterized in that the crystal structure of the 4H—SiC substrate is oriented with respect to the longitudinal axis such that at each position on the lateral surface of the semi-finished product there is a line segment which is intersected by at least a predetermined minimum number of parallel cleavage planes of the {1010} form per unit length, wherein the line segment is defined by a plane tangent to the lateral surface at said position.
H01L 29/16 - Corps semi-conducteurs caractérisés par les matériaux dont ils sont constitués comprenant, mis à part les matériaux de dopage ou autres impuretés, seulement des éléments du groupe IV de la classification périodique, sous forme non combinée
H01L 29/04 - Corps semi-conducteurs caractérisés par leur structure cristalline, p.ex. polycristalline, cubique ou à orientation particulière des plans cristallins
22.
CRYSTAL STRUCTURE ORIENTATION IN SEMICONDUCTOR SEMI-FINISHED PRODUCTS AND SEMICONDUCTOR SUBSTRATES FOR FISSURE REDUCTION AND METHOD OF SETTING SAME
Crystal structure orientation in semiconductor semi-finished products and semiconductor substrates for fissure reduction and method of setting same The present invention provides monocrystalline semiconductor semi-finished product and substrates having a predetermined orientation of its crystal structure relative to a central axis and a at least partially curved lateral surface of the semi-finished product or substrate that reduces or even eliminates the occurrence of cracks during mechanical processing, and a method of producing such semiconductor semi-finished products and/or substrates. In the predetermined orientation, a first crystallographic axis perpendicular to a set of first cleavage planes makes a first tilt angle with a plane transverse to the central axis, and a second crystallographic axis perpendicular to a set of second cleavage planes and to the first crystallographic axis makes a second tilt angle with said plane transverse to the central axis so that each set of parallel cleavage planes that are symmetrically equivalent to either the first or second cleavage planes are inclined relative to the central axis.
01 - Produits chimiques destinés à l'industrie, aux sciences ainsi qu'à l'agriculture
09 - Appareils et instruments scientifiques et électriques
40 - Traitement de matériaux; recyclage, purification de l'air et traitement de l'eau
Produits et services
Chemical products for industrial and scientific purposes,
namely polycrystalline or monocrystalline materials, in
particular for use in mechanics, optics and semiconductor
technology and in particular for use as gemstones;
crystalline semiconductor material; semiconductor single
crystals; all aforementioned products based on silicon
carbide or on aluminium oxide or on II-VI semiconductors, in
particular zinc oxide, zinc sulphide, zinc selenide,
magnesium oxide, magnesium sulphide, magnesium selenide,
cadmium selenide or cadmium telluride, or on III-V
semiconductors, in particular boron nitride, aluminium
nitride, gallium nitride, gallium phosphide or gallium
arsenide. Electronic materials, namely semiconductor materials, in
particular in form of wafers, as far as included in this
class; semiconductors; semiconductor wafers; wafers for
power electronic components; all aforesaid products based on
silicon carbide or on aluminium oxide or on II-VI
semiconductors, in particular zinc oxide, zinc sulphide,
zinc selenide, magnesium oxide, magnesium sulphide,
magnesium selenide, cadmium selenide or cadmium telluride,
or on III-V semiconductors, in particular boron nitride,
aluminium nitride, gallium nitride, gallium phosphide or
gallium arsenide. Processing of semiconductor materials, semiconductor wafers
or semiconductor components; customer-specific contract
manufacturing or processing of semiconductor wafers; all
aforesaid services for semiconductors based on silicon
carbide or aluminium oxide or on II-VI semiconductors, in
particular zinc oxide, zinc sulphide, zinc selenide,
magnesium oxide, magnesium sulphide, magnesium selenide,
cadmium selenide or cadmium telluride, or on III-V
semiconductors, in particular boron nitride, aluminium
nitride, gallium nitride, gallium phosphide or gallium
arsenide.
25.
Silicon carbide substrate and method of growing SiC single crystal boules
40 - Traitement de matériaux; recyclage, purification de l'air et traitement de l'eau
01 - Produits chimiques destinés à l'industrie, aux sciences ainsi qu'à l'agriculture
09 - Appareils et instruments scientifiques et électriques
Produits et services
Mechanical processing of semiconductor elements, semiconductor wafers or semiconductor components; chemical processing of semiconductor elements, semiconductor wafers or semiconductor components; customer-specific contract manufacturing of semiconductor wafers; all aforesaid services for semiconductors based on silicon carbide or aluminium oxide or on II-VI semiconductors, in particular zinc oxide, zinc sulphide, zinc selenide, magnesium oxide, magnesium sulphide, magnesium selenide, cadmium selenide or cadmium telluride, or on III-V semiconductors, in particular boron nitride, aluminium nitride, gallium nitride, gallium phosphide or gallium arsenide Chemicals for industrial and scientific purposes, namely, polycrystalline or monocrystalline materials, being chemicals for use in mechanics, optics and semiconductor technology, all aforementioned goods based on silicon carbide or on aluminium oxide or on II-VI semiconductors, in particular zinc oxide, zinc sulphide, zinc selenide, magnesium oxide, magnesium sulphide, magnesium selenide, cadmium selenide or cadmium telluride, or on III-V semiconductors, in particular boron nitride, aluminium nitride, gallium nitride, gallium phosphide or gallium arsenide; chemicals for industrial purposes in the nature of crystalline semiconductor material based on silicon carbide or on aluminium oxide or on II-VI semiconductors, in particular zinc oxide, zinc sulphide, zinc selenide, magnesium oxide, magnesium sulphide, magnesium selenide, cadmium selenide or cadmium telluride, or on III-V semiconductors, in particular boron nitride, aluminium nitride, gallium nitride, gallium phosphide or gallium arsenide; chemicals for industrial purposes in the nature of semiconductor single crystals based on silicon carbide or on aluminium oxide or on II-VI semiconductors, in particular zinc oxide, zinc sulphide, zinc selenide, magnesium oxide, magnesium sulphide, magnesium selenide, cadmium selenide or cadmium telluride, or on III-V semiconductors, in particular boron nitride, aluminium nitride, gallium nitride, gallium phosphide or gallium arsenide Electronic materials, namely, semiconductor materials in the form of semiconductor wafers; semiconductors; semiconductor wafers; wafers for power electronic components, namely, wafers for integrated circuits; all aforesaid goods based on silicon carbide or on aluminium oxide or on II-VI semiconductors, in particular zinc oxide, zinc sulphide, zinc selenide, magnesium oxide, magnesium sulphide, magnesium selenide, cadmium selenide or cadmium telluride, or on III-V semiconductors, in particular boron nitride, aluminium nitride, gallium nitride, gallium phosphide or gallium arsenide
27.
System for horizontal growth of high-quality semiconductor single crystals by physical vapor transport
A system for manufacturing one or more single crystals of a semiconductor material by physical vapor transport (PVT) includes a reactor having an inner chamber adapted to accommodate a PVT growth structure for growing the one or more single crystals inside. The reactor accommodates the PVT growth structure in an orientation with a growth direction of the one or more single crystals inside the PVT growth structure substantially horizontal with respect to a direction of gravity or within an angle from horizontal of less than a predetermined value.
C30B 35/00 - Appareillages non prévus ailleurs, spécialement adaptés à la croissance, à la production ou au post-traitement de monocristaux ou de matériaux polycristallins homogènes de structure déterminée
A system for simultaneously manufacturing more than one single crystal of a semiconductor material by physical vapor transport (PVT) includes a plurality of reactors and a common vacuum channel connecting at least a pair of reactors of the plurality of reactors. Each reactor has an inner chamber adapted to accommodate a PVT growth structure for growth of a single semiconductor crystal. The common vacuum channel is connectable to a vacuum pump system for creating and/or controlling a common gas phase condition in the inner chambers of the pair of reactors.
C30B 35/00 - Appareillages non prévus ailleurs, spécialement adaptés à la croissance, à la production ou au post-traitement de monocristaux ou de matériaux polycristallins homogènes de structure déterminée
C30B 23/00 - Croissance des monocristaux par condensation d'un matériau évaporé ou sublimé
C30B 23/06 - Chauffage de l'enceinte de dépôt, du substrat ou du matériau à évaporer
Production method and growth arrangement for producing a bulk SiC single crystal by arranging at least two insulation cylinder components to control a variation in a volume element density
A bulk SiC single crystal is produced by placing an SiC seed crystal in a crystal growth region of a growth crucible, and introducing SiC source material into an SiC reservoir region, and the bulk SiC single crystal is grown on from an SiC growth gas phase by deposition. The growth crucible is surrounded by an insulation that extends rotationally symmetrically and axially towards the central middle longitudinal axis. The insulation has mutually concentric insulation cylinder components and the insulation is notionally divided into insulation ring segments that are in turn notionally divided into volume elements. The insulation cylinder components are selected and positioned relative to one another such that every volume element of the insulation ring segment in question has a volume element density varying by not more than 10% from an average insulation ring segment density of the insulation ring segment in question.
C30B 23/06 - Chauffage de l'enceinte de dépôt, du substrat ou du matériau à évaporer
C23C 14/06 - Revêtement par évaporation sous vide, pulvérisation cathodique ou implantation d'ions du matériau composant le revêtement caractérisé par le matériau de revêtement
B32B 5/16 - Produits stratifiés caractérisés par l'hétérogénéité ou la structure physique d'une des couches caractérisés par le fait qu'une des couches est formée de particules, p. ex. de copeaux, de fibres hachées, de poudre
The present invention relates to a chamfered silicon carbide substrate which is essentially monocrystalline, and to a corresponding method of chamfering a silicon carbide substrate. The silicon carbide substrate (100) comprises a main surface (102) and a circumferential end face surface (114) which is essentially perpendicular to the main surface (102), and a chamfered peripheral region (110), wherein a first bevel surface (106) of the chamfered peripheral region (110) includes a first bevel angle (a1) with said main surface (102), and wherein a second bevel surface (108) of the chamfered peripheral region (110) includes a second bevel angle (a2) with said end face surface (114), wherein, in more than 75% of the peripheral region, said first bevel angle (a1) has a value in a range between 20° and 50°, and said second bevel angle (a2) has a value in a range between 45° and 75°.
B24B 9/02 - Machines ou dispositifs pour meuler les bords ou les biseaux des pièces ou pour enlever des bavuresAccessoires à cet effet caractérisés par le fait qu'ils sont spécialement étudiés en fonction des propriétés de la matière propre aux objets à meuler
C30B 29/60 - Monocristaux ou matériaux polycristallins homogènes de structure déterminée caractérisés par leurs matériaux ou par leur forme caractérisés par la forme
C30B 33/00 - Post-traitement des monocristaux ou des matériaux polycristallins homogènes de structure déterminée
H01L 21/02 - Fabrication ou traitement des dispositifs à semi-conducteurs ou de leurs parties constitutives
B24B 9/06 - Machines ou dispositifs pour meuler les bords ou les biseaux des pièces ou pour enlever des bavuresAccessoires à cet effet caractérisés par le fait qu'ils sont spécialement étudiés en fonction des propriétés de la matière propre aux objets à meuler de matière inorganique non métallique, p. ex. de la pierre, des céramiques, de la porcelaine
B24B 37/04 - Machines ou dispositifs de rodageAccessoires conçus pour travailler les surfaces planes
32.
Chamfered silicon carbide substrate and method of chamfering
The present invention relates to a chamfered silicon carbide substrate which is essentially monocrystalline, and to a corresponding method of chamfering a silicon carbide substrate. A silicon carbide substrate according to the invention comprises a main surface (102), wherein an orientation of said main surface (102) is such that a normal vector ({right arrow over (O)}) of the main surface (102) includes a tilt angle with a normal vector ({right arrow over (N)}) of a basal lattice plane (106) of the substrate, and a chamfered peripheral region (110), wherein a surface of the chamfered peripheral region includes a bevel angle with said main surface, wherein said bevel angle is chosen so that, in more than 75% of the peripheral region, normal vectors ({right arrow over (F)}_i) of the chamfered peripheral region (110) differ from the normal vector of the basal lattice plane by less than a difference between the normal vector of the main surface and the normal vector of the basal lattice plane of the substrate.
H01L 21/02 - Fabrication ou traitement des dispositifs à semi-conducteurs ou de leurs parties constitutives
H01L 29/16 - Corps semi-conducteurs caractérisés par les matériaux dont ils sont constitués comprenant, mis à part les matériaux de dopage ou autres impuretés, seulement des éléments du groupe IV de la classification périodique, sous forme non combinée
H01L 29/34 - Corps semi-conducteurs ayant des surfaces polies ou rugueuses les défectuosités étant sur la surface
H01L 29/04 - Corps semi-conducteurs caractérisés par leur structure cristalline, p.ex. polycristalline, cubique ou à orientation particulière des plans cristallins
The present invention relates to a silicon carbide (SiC) substrate with improved mechanical and electrical characteristics. Furthermore, the invention relates to a method for producing a bulk SiC crystal in a physical vapor transport growth system. The silicon carbide substrate comprises an inner region (102) which constitutes at least 30 % of a total surface area of said substrate (100), a ring shaped peripheral region (104) radially surrounding the inner region (102), wherein a mean concentration of a dopant in the inner region (102) differs by at maximum 5⋅1018 cm-3, preferably 1⋅1018 cm-3, from the mean concentration of this dopant in the peripheral region (104).
The present invention relates to a silicon carbide (SiC) substrate with improved mechanical and electrical characteristics. Furthermore, the invention relates to a method for producing a bulk SiC crystal in a physical vapor transport growth system. The silicon carbide substrate comprises an inner region (102) which constitutes at least 30 % of a total surface area of said substrate (100), a ring shaped peripheral region (104) radially surrounding the inner region (102), wherein a mean concentration of a dopant in the inner region (102) differs by at least 1 - 1018 cm-3 from the mean concentration of this dopant in the peripheral region (104).
−3. The transport of material from the SiC supply area to the growth boundary surface is additionally influenced. The growing temperature at the growth boundary surface and the material transport to the growth boundary surface are influenced largely independently of one another.
B32B 3/00 - Produits stratifiés comprenant une couche ayant des discontinuités ou des rugosités externes ou internes, ou une couche de forme non planeProduits stratifiés comprenant une couche ayant des particularités au niveau de sa forme
H01B 1/04 - Conducteurs ou corps conducteurs caractérisés par les matériaux conducteurs utilisésEmploi de matériaux spécifiés comme conducteurs composés principalement soit de compositions à base de carbone-silicium, soit de carbone soit de silicium
C30B 23/00 - Croissance des monocristaux par condensation d'un matériau évaporé ou sublimé
36.
Monocrystalline SiC substrate with a non-homogeneous lattice plane course
A method is used for producing an SiC volume monocrystal by sublimation growth. During growth, by sublimation of a powdery SiC source material and by transport of the sublimated gaseous components into the crystal growth region, an SiC growth gas phase is produced there. The SiC volume monocrystal grows by deposition from the SiC growth gas phase on the SiC seed crystal. The SiC seed crystal is bent during a heating phase before such that an SiC crystal structure with a non-homogeneous course of lattice planes is adjusted, the lattice planes at each point have an angle of inclination relative to the direction of the center longitudinal axis and peripheral angles of inclination at a radial edge of the SiC seed crystal differ in terms of amount by at least 0.05° and at most by 0.2° from a central angle of inclination at the site of the center longitudinal axis.
H01L 29/16 - Corps semi-conducteurs caractérisés par les matériaux dont ils sont constitués comprenant, mis à part les matériaux de dopage ou autres impuretés, seulement des éléments du groupe IV de la classification périodique, sous forme non combinée
H01L 29/04 - Corps semi-conducteurs caractérisés par leur structure cristalline, p.ex. polycristalline, cubique ou à orientation particulière des plans cristallins
H01L 29/06 - Corps semi-conducteurs caractérisés par les formes, les dimensions relatives, ou les dispositions des régions semi-conductrices
37.
Physical vapor transport growth system for simultaneously growing more than one SiC single crystal and method of growing
The present invention relates to a configuration and in particular a physical vapor transport growth system for simultaneously growing more than one silicon carbide (SiC) bulk crystal. Furthermore, the invention relates to a method for producing such a bulk SiC crystal. A physical vapor transport growth system for simultaneously growing more than one SiC single crystal boule comprises a crucible containing two growth compartments for arranging at least one SiC seed crystal in each of them, and a source material compartment for containing a SiC source material, wherein said source material compartment is arranged symmetrically between said growth compartments and is separated from each of the growth compartments by a gas permeable porous membrane.
Production method for an SiC volume monocrystal with a non-homogeneous lattice plane course and a monocrystalline SiC substrate with a non-homogeneous lattice plane course
A method is used for producing an SiC volume monocrystal by sublimation growth. During growth, by sublimation of a powdery SiC source material and by transport of the sublimated gaseous components into the crystal growth region, an SiC growth gas phase is produced there. The SiC volume monocrystal grows by deposition from the SiC growth gas phase on the SiC seed crystal. The SiC seed crystal is bent during a heating phase before such that an SiC crystal structure with a non-homogeneous course of lattice planes is adjusted, the lattice planes at each point have an angle of inclination relative to the direction of the center longitudinal axis and peripheral angles of inclination at a radial edge of the SiC seed crystal differ in terms of amount by at least 0.05° and at most by 0.2° from a central angle of inclination at the site of the center longitudinal axis.
C30B 21/02 - Solidification unidirectionnelle des matériaux eutectiques par simple coulée ou par solidification dans un gradient de température
39.
Production method for an SiC volume monocrystal with a homogeneous lattice plane course and a monocrystalline SiC substrate with a homogeneous lattice plane course
A method is used for producing an SiC volume monocrystal by sublimation growth. Before the beginning of growth, an SiC seed crystal is arranged in a crystal growth region of a growth crucible and powdery SiC source material is introduced into an SiC storage region of the growth crucible. During the growth, by sublimation of the powdery SiC source material and by transport of the sublimated gaseous components into the crystal growth region, an SiC growth gas phase is produced there. The SiC volume monocrystal having a central center longitudinal axis grows by deposition from the SiC growth gas phase on the SiC seed crystal. The SiC seed crystal is heated substantially without bending during a heating phase before the beginning of growth, so that an SiC crystal structure with a substantially homogeneous course of lattice planes is provided in the SiC seed crystal.
A method is used to produce a bulk SiC single crystal. A seed crystal is arranged in a crystal growth region of a growing crucible. An SiC growth gas phase is produced in the crystal growth region. The bulk SiC single crystal having a central longitudinal mid-axis grows by deposition from the SiC growth gas phase, the deposition taking place on a growth interface of the growing bulk SiC single crystal. The SiC growth gas phase is at least partially fed from an SiC source material and contains at least one dopant from the group of nitrogen, aluminum, vanadium and boron. At least in a central main growth region of the growth interface arranged about the longitudinal mid-axis, a lateral temperature gradient of at most 2 K/cm measured perpendicular to the longitudinal mid-axis is adjusted and maintained in this range. The bulk SiC single crystal has a large facet region.
B32B 3/02 - Caractérisés par des caractéristiques de forme en des endroits déterminés, p. ex. au voisinage des bords
B32B 17/10 - Produits stratifiés composés essentiellement d'une feuille de verre ou de fibres de verre, de scorie ou d'une substance similaire comprenant du verre comme seul composant ou comme composant principal d'une couche adjacente à une autre couche d'une substance spécifique de résine synthétique
B32B 9/00 - Produits stratifiés composés essentiellement d'une substance particulière non couverte par les groupes
B32B 19/00 - Produits stratifiés composés essentiellement de fibres ou particules minérales naturelles, p. ex. d'amiante, de mica
