SiCrystal GmbH

Germany

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C30B 29/36 - Carbides 34
C30B 23/02 - Epitaxial-layer growth 16
C30B 23/06 - Heating of the deposition chamber, the substrate, or the materials to be evaporated 11
C30B 23/00 - Single-crystal growth by condensing evaporated or sublimed materials 10
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1.

CRUCIBLE FOR PRODUCING A SIC VOLUME MONO CRYSTAL AND A METHOD FOR GROWING A SIC VOLUME MONO CRYSTAL

      
Application Number 18976177
Status Pending
Filing Date 2024-12-10
First Publication Date 2025-06-19
Owner SiCrystal GmbH (Germany)
Inventor
  • Ecker, Bernhard
  • Müller, Ralf
  • Schuh, Philipp
  • Stockmeier, Matthias
  • Vogel, Michael

Abstract

The present invention relates to a crucible with a cavity for growing a SiC volume mono crystal by sublimation growth in a direction of growth (Y). The crucible comprises an end wall (110) with a seed holder (112) for holding a SiC seed crystal in the cavity, the end wall (110) extending in a direction (r) perpendicular to the direction of growth (Y); a side wall (140) extending in the direction of growth (Y), the side wall (140) preventing permeation of a doping gas from an external into the cavity, the doping gas for doping the SiC volume mono crystal during the sublimation growth; and a diffusion region (114) allowing permeation of the doping gas from the external in the cavity, wherein the diffusion region (114) is located between the seed holder (112) and an edge (142) of the side wall (140).

IPC Classes  ?

  • C30B 23/00 - Single-crystal growth by condensing evaporated or sublimed materials
  • C30B 23/06 - Heating of the deposition chamber, the substrate, or the materials to be evaporated
  • C30B 29/36 - Carbides

2.

ARRANGEMENT FOR GROWING A SIC VOLUME MONOCRYSTAL AND GROWING METHOD

      
Application Number 18982900
Status Pending
Filing Date 2024-12-16
First Publication Date 2025-06-19
Owner SiCrystal GmbH (Germany)
Inventor
  • Ecker, Bernhard
  • Klietz, Wenzel
  • Müller, Ralf
  • Schuh, Philipp
  • Stockmeier, Matthias
  • Vogel, Michael

Abstract

An arrangement for growing a SiC volume monocrystal in a cavity (110) by sublimation growth in the direction of growth (Y) includes a susceptor (100) for absorbing electromagnetic energy and heating the cavity (110). An insulator (200) surrounds the susceptor (100) to thermally insulate it from the exterior. The insulator (200) features a thermal insulation wall (202) that reduces radial heat transfer (r) from the susceptor (100). A thermally conductive layer (210) is positioned between the susceptor (100) and the thermal insulation wall (202) to distribute heat and minimize or reduce thermal conduction to the insulator (200), enhancing the insulator's reflectivity and reducing waviness.

IPC Classes  ?

  • C30B 23/06 - Heating of the deposition chamber, the substrate, or the materials to be evaporated
  • C30B 29/36 - Carbides

3.

Method for Producing a Bulk SiC Single Crystal with Improved Quality Using a SiC Seed Crystal with a Temporary Protective Oxide Layer, and SiC Seed Crystal with Protective Oxide Layer

      
Application Number 18691364
Status Pending
Filing Date 2023-05-17
First Publication Date 2024-11-28
Owner SiCrystal GmbH (Germany)
Inventor
  • Ecker, Bernhard
  • Müller, Ralf
  • Schuh, Philipp
  • Stockmeier, Matthias

Abstract

The present invention relates to a silicon carbide substrate for use as a crystal seed, comprising a monocrystalline silicon carbide disk covered with a protective oxide layer. The protective oxide layer is intended to be removed to expose an ideal, clean surface of the monocrystalline silicon carbide disk. The present invention also relates to a method of producing at least one bulk silicon carbide single-crystal by sublimation growth using the silicon carbide substrate with protective oxide layer as a seed crystal. The protective oxide layer is removed from the seed crystal surface to expose the underlying monocrystalline silicon carbide disk by a back-etching process performed in-situ in the crystal growth crucible, i.e. after the seed crystal is arranged inside the growth crucible and before the sublimation deposition on the growth surface starts.

IPC Classes  ?

  • C30B 23/02 - Epitaxial-layer growth
  • C30B 29/36 - Carbides
  • C30B 33/00 - After-treatment of single crystals or homogeneous polycrystalline material with defined structure
  • C30B 33/12 - Etching in gas atmosphere or plasma
  • C30B 35/00 - Apparatus not otherwise provided for, specially adapted for the growth, production or after-treatment of single crystals or of a homogeneous polycrystalline material with defined structure

4.

METHOD AND APPARATUS FOR THE THERMAL POST-TREATMENT OF AT LEAST ONE SIC VOLUME MONOCRYSTAL

      
Application Number 18598090
Status Pending
Filing Date 2024-03-07
First Publication Date 2024-09-26
Owner SiCrystal GmbH (Germany)
Inventor
  • Ecker, Bernhard
  • Kowasch, Maximilian
  • Müller, Ralf
  • Schuh, Philipp
  • Stockmeier, Matthias
  • Takegawa, Daisuke
  • Vogel, Michael
  • Weber, Arnd-Dietrich

Abstract

Thermal post-treatment of a silicon carbide (SiC) volume monocrystal which has a substantially cylindrical basic shape with a crystal length in an axial direction, a crystal diameter in a radial direction, a crystal central longitudinal axis extending in the axial direction, and with three boundary surfaces, namely, a bottom surface, a top surface and a circumferential edge surface. The SiC volume monocrystal is brought to a post-treatment temperature in order to reduce mechanical stresses present in the SiC volume monocrystal after completion of the previous growth, wherein an inhomogeneous temperature profile with a radial thermal gradient is set in the SiC volume monocrystal, which rises continuously from the crystal central longitudinal axis to the circumferential edge surface, and a heat exchange of the SiC volume monocrystal with a surrounding free space takes place via free heat radiation on at least two of the three boundary surfaces.

IPC Classes  ?

5.

Sublimation System and Method of Growing at Least One Single Crystal of a Semiconductor Material

      
Application Number 18595130
Status Pending
Filing Date 2024-03-04
First Publication Date 2024-09-19
Owner SiCrystal GmbH (Germany)
Inventor
  • Müller, Ralf
  • Ecker, Bernhard
  • Schuh, Philipp
  • Stockmeier, Matthias
  • Vogel, Michael

Abstract

The present invention relates to systems and methods for growing bulk semiconductor single crystals, and more specifically, for growing bulk semiconductor single crystals, such as silicon carbide, based on physical vapor transport. The sublimation system comprises a crucible (202) having a longitudinal axis (212) and a sidewall (218) extending along the longitudinal axis (212), wherein the crucible (202) comprises a fixing means for at least one seed crystal (210) and at least one source material compartment (204) for containing a source material (208); and a heating system for generating a temperature field around a circumference of the crucible (202) along the longitudinal axis (212) of the crucible (202); a thermally insulating unit (214) arranged within the source material compartment (204) at the sidewall (218) of the crucible (202).

IPC Classes  ?

  • C30B 23/06 - Heating of the deposition chamber, the substrate, or the materials to be evaporated
  • C30B 29/36 - Carbides
  • C30B 35/00 - Apparatus not otherwise provided for, specially adapted for the growth, production or after-treatment of single crystals or of a homogeneous polycrystalline material with defined structure

6.

Sublimation System And Method Of Growing At Least One Single Crystal

      
Application Number 18581200
Status Pending
Filing Date 2024-02-19
First Publication Date 2024-09-19
Owner SiCrystal GmbH (Germany)
Inventor
  • Schuh, Philipp
  • Ecker, Bernhard
  • Müller, Ralf
  • Stockmeier, Matthias
  • Vogel, Michael

Abstract

The present invention relates to systems and methods for growing bulk semiconductor single crystals, and more specifically, for growing bulk semiconductor single crystals, such as silicon carbide, based on physical vapor transport. The sublimation system comprises a crucible (102) having a longitudinal axis (120) and a sidewall (116) extending along the longitudinal axis (120), wherein the crucible comprises a fixing means for at least one seed crystal (110) and at least one source material compartment (104) for containing a source material (108), and a heating system being formed to generate a temperature field around a circumference of the crucible along the longitudinal axis of the crucible, wherein the crucible (102) comprises at least one first heat radiation cavity (118), which is arranged opposite to the fixing means and adjacent to the source material compartment (104), the first heat radiation cavity (118) being closed on all of its sides.

IPC Classes  ?

  • C30B 23/06 - Heating of the deposition chamber, the substrate, or the materials to be evaporated
  • C30B 29/36 - Carbides

7.

SYSTEM FOR MANUFACTURING A HIGH-QUALITY SEMICONDUCTOR SINGLE CRYSTAL, AND METHOD OF MANUFACTURING SAME

      
Application Number 18422958
Status Pending
Filing Date 2024-01-25
First Publication Date 2024-08-08
Owner SiCrystal GmbH (Germany)
Inventor
  • Ecker, Bernhard
  • Müller, Ralf
  • Schuh, Philipp
  • Stockmeier, Matthias
  • Vogel, Michael

Abstract

The present invention relates to systems and methods for growing bulk semiconductor single crystals, and more specifically, for growing a bulk semiconductor single crystals, such as silicon carbide, based on physical vapor transport. A sublimation system for growing at least one single crystal of a semiconductor material by means of a sublimation growing process comprises a crucible (102) having a longitudinal axis (120) and comprising a fixing means for at least one seed crystal (110) and at least one source material compartment (104) for containing a source material (108); a heating system being formed to generate an irregular temperature field around a circumference of the crucible (102) and/or along the longitudinal axis of the crucible (102); a thermal insulation unit (117) at least partly surrounding the crucible (102), wherein the thermal insulation unit (117) has a radially and/or axially asymmetric form to compensate the irregular temperature field.

IPC Classes  ?

  • C30B 23/06 - Heating of the deposition chamber, the substrate, or the materials to be evaporated
  • C30B 29/36 - Carbides

8.

SYSTEM FOR MANUFACTURING A HIGH-QUALITY SEMICONDUCTOR SINGLE CRYSTAL, AND METHOD OF MANUFACTURING SAME

      
Application Number 18425532
Status Pending
Filing Date 2024-01-29
First Publication Date 2024-08-08
Owner SiCrystal GmbH (Germany)
Inventor
  • Ecker, Bernhard
  • Müller, Ralf
  • Schuh, Philipp
  • Stockmeier, Matthias
  • Vogel, Michael

Abstract

The present invention relates to systems and methods for growing bulk semiconductor single crystals, and more specifically, for growing a bulk semiconductor single crystals, such as silicon carbide, based on physical vapor transport. A sublimation system for growing at least one single crystal of a semiconductor material by means of a sublimation growing process comprises a crucible (102) having a longitudinal axis (120) and comprising a fixing means for at least one seed crystal (110) and at least one source material compartment (104) for containing a source material (108); a heating system being formed to generate an irregular temperature field around a circumference of the crucible at one or more defined heights along the longitudinal axis of the crucible; a rotary drive that is operable to cause a rotational movement of the fixing means around the longitudinal axis relative to the heating system.

IPC Classes  ?

  • C30B 23/06 - Heating of the deposition chamber, the substrate, or the materials to be evaporated
  • C30B 29/36 - Carbides

9.

METHOD FOR PRODUCING A BULK SIC SINGLE CRYSTAL WITH IMPROVED QUALITY USING A SIC SEED CRYSTAL WITH A TEMPORARY PROTECTIVE OXIDE LAYER, AND SIC SEED CRYSTAL WITH PROTECTIVE OXIDE LAYER

      
Application Number EP2023063347
Publication Number 2024/037747
Status In Force
Filing Date 2023-05-17
Publication Date 2024-02-22
Owner SICRYSTAL GMBH (Germany)
Inventor
  • Ecker, Bernhard
  • Müller, Ralf
  • Schuh, Philipp
  • Stockmeier, Matthias

Abstract

The present invention relates to a silicon carbide substrate for use as a crystal seed, comprising a monocrystalline silicon carbide disk covered with a protective oxide layer. The protective oxide layer is intended to be removed to expose an ideal, clean surface of the monocrystalline silicon carbide disk. The present invention also relates to a method of producing at least one bulk silicon carbide single-crystal by sublimation growth using the silicon carbide substrate with protective oxide layer as a seed crystal. The protective oxide layer is removed from the seed crystal surface to expose the underlying monocrystalline silicon carbide disk by a back-etching process performed in-situ in the crystal growth crucible, i.e. after the seed crystal is arranged inside the growth crucible and before the sublimation deposition on the growth surface starts.

IPC Classes  ?

10.

PRODUCTION METHOD FOR AN SIC VOLUME MONOCRYSTAL OF INHOMOGENEOUS SCREW DISLOCATION DISTRIBUTION AND SIC SUBSTRATE

      
Application Number 18466188
Status Pending
Filing Date 2023-09-13
First Publication Date 2024-01-04
Owner SiCrystal GmbH (Germany)
Inventor
  • Ecker, Bernhard
  • Müller, Ralf
  • Stockmeier, Matthias
  • Vogel, Michael
  • Weber, Arnd-Dietrich

Abstract

An SiC volume monocrystal is processed by sublimation growth. An SiC seed crystal is placed in a crystal growth region of a growing crucible and SiC source material is introduced into an SiC storage region. During growth, at a growth temperature of up to 2,400° C. and a growth pressure between 0.1 mbar and 100 mbar, an SiC growth gas phase is generated by sublimation of the SiC source material and by transport of the sublimated gaseous components into the crystal growth region, where an SiC volume monocrystal grows by deposition from the SiC growth gas phase on the SiC seed crystal. A mechanical stress is introduced into the SiC seed crystal at room temperature prior to the start of the growth to cause seed screw dislocations present in the SiC seed crystal to undergo a dislocation movement so that seed screw dislocations recombine.

IPC Classes  ?

  • C30B 29/36 - Carbides
  • C30B 23/02 - Epitaxial-layer growth
  • C30B 23/06 - Heating of the deposition chamber, the substrate, or the materials to be evaporated
  • C30B 23/00 - Single-crystal growth by condensing evaporated or sublimed materials

11.

PRODUCTION METHOD FOR AN SIC VOLUME MONOCRYSTAL OF HOMOGENEOUS SCREW DISLOCATION DISTRIBUTION AND SIC SUBSTRATE

      
Application Number 18466184
Status Pending
Filing Date 2023-09-13
First Publication Date 2023-12-28
Owner SiCrystal GmbH (Germany)
Inventor
  • Ecker, Bernhard
  • Müller, Ralf
  • Stockmeier, Matthias
  • Vogel, Michael
  • Weber, Arnd-Dietrich

Abstract

A SiC volume monocrystal is produced by sublimation growth. An SiC seed crystal is placed in a crystal growth region of a growing crucible and SiC source material is introduced into an SiC storage region. During growth, at a growth temperature of up to 2,400° C. and a growth pressure between 0.1 mbar and 100 mbar, an SiC growth gas phase is generated by sublimation of the SiC source material and by transport of the sublimated gaseous components into the crystal growth region, where an SiC volume monocrystal grows by deposition from the SiC growth gas phase on the SiC seed crystal. Prior to the start of growth, the SiC seed crystal is examined at the growth surface for the presence of seed screw dislocations, nucleation centers are generated, wherein the nucleation centers are starting points for at least one compensation screw dislocation during the growth carried out subsequently.

IPC Classes  ?

12.

Crystal Structure Orientation in Semiconductor Semi-Finished Products and Semiconductor Substrates for Fissure Reduction and Method of Setting Same

      
Application Number 18016912
Status Pending
Filing Date 2021-06-09
First Publication Date 2023-11-02
Owner SICRYSTAL GMBH (Germany)
Inventor
  • Vogel, Michael
  • Schmitt, Erwin
  • Weber, Arnd-Dietrich
  • Barz, Ralph-Uwe
  • Bannspach, Dominik

Abstract

Crystal structure orientation in semiconductor semi-finished products and semiconductor substrates for fissure reduction and method of setting same The present invention provides monocrystalline semiconductor semi-finished product and substrates having a predetermined orientation of its crystal structure relative to a central axis and a at least partially curved lateral surface of the semi-finished product or substrate that reduces or even eliminates the occurrence of cracks during mechanical processing, and a method of producing such semiconductor semi-finished products and/or substrates. In the predetermined orientation, a first crystallographic axis perpendicular to a set of first cleavage planes makes a first tilt angle with a plane transverse to the central axis, and a second crystallographic axis perpendicular to a set of second cleavage planes and to the first crystallographic axis makes a second tilt angle with said plane transverse to the central axis so that each set of parallel cleavage planes that are symmetrically equivalent to either the first or second cleavage planes are inclined relative to the central axis.

IPC Classes  ?

13.

Monocrystalline SIC Substrates Having an Asymmetrical Geometry and Method of Producing Same

      
Application Number 18021567
Status Pending
Filing Date 2022-04-14
First Publication Date 2023-10-05
Owner SICRYSTAL GMBH (Germany)
Inventor
  • Okamoto, Kuniyoshi
  • Vogel, Michael

Abstract

The present invention provides a monocrystalline SiC substrate with an asymmetric shape for enhancing substrate stiffness against thermal induced deformations, the substrate comprising: a main region, and an asymmetric region located at a peripheral region of the substrate and adjacent to the main region, wherein the asymmetric region is inclined inwards, relative to the main region, to provide an asymmetric shape to the substrate. The present invention also provides a method of producing one or more substrates with an asymmetric shape, comprising: performing a multi-wire sawing process in which one or more substrates are cut with an wire-sawing web from an ingot placed on a stage, and cutting the one or more substrates with the asymmetric shape by controlling a relative movement between the wire-sawing web and the stage, the relative movement causing the wire-sawing web to describe a non-linear sawing path across the ingot to cut the asymmetric shape.

IPC Classes  ?

  • H01L 29/06 - Semiconductor bodies characterised by the shapes, relative sizes, or dispositions of the semiconductor regions
  • C30B 29/36 - Carbides
  • C30B 33/00 - After-treatment of single crystals or homogeneous polycrystalline material with defined structure
  • B28D 5/04 - Fine working of gems, jewels, crystals, e.g. of semiconductor materialApparatus therefor by tools other than of rotary type, e.g. reciprocating tools
  • B28D 5/00 - Fine working of gems, jewels, crystals, e.g. of semiconductor materialApparatus therefor
  • H01L 29/16 - Semiconductor bodies characterised by the materials of which they are formed including, apart from doping materials or other impurities, only elements of Group IV of the Periodic System in uncombined form

14.

SILICON CARBIDE SUBSTRATE AND METHOD OF GROWING SiC SINGLE CRYSTAL BOULES

      
Application Number 18172202
Status Pending
Filing Date 2023-02-21
First Publication Date 2023-06-22
Owner SICRYSTAL GMBH (Germany)
Inventor
  • Vogel, Michael
  • Ecker, Bernhard
  • Müller, Ralf
  • Stockmeier, Matthias
  • Weber, Arnd-Dietrich

Abstract

The present invention relates to a silicon carbide (SiC) substrate with improved mechanical and electrical characteristics. Furthermore, the invention relates to a method for producing a bulk SiC crystal in a physical vapor transport growth system. The silicon carbide substrate comprises an inner region (102) which constitutes at least 30% of a total surface area of said substrate (100), a ring shaped peripheral region (104) radially surrounding the inner region (102), wherein a mean concentration of a dopant in the inner region (102) differs by at least 1·1018 cm−3 from the mean concentration of this dopant in the peripheral region (104).

IPC Classes  ?

15.

Method for simultaneously manufacturing more than one single crystal of a semiconductor material by physical vapor transport

      
Application Number 18068980
Grant Number 12157955
Status In Force
Filing Date 2022-12-20
First Publication Date 2023-04-20
Grant Date 2024-12-03
Owner SiCrystal GmbH (Germany)
Inventor
  • Schmitt, Erwin
  • Vogel, Michael

Abstract

A method for simultaneously manufacturing more than one single crystal of a semiconductor material by physical vapor transport (PVT) includes connecting a pair of reactors to a vacuum pump system by a common vacuum channel and creating and/or controlling, with the vacuum pump system, a common gas phase condition in the inner chambers of the pair of reactors. Each reactor has an inner chamber adapted to accommodate a PVT growth structure for growth of a semiconductor single crystal.

IPC Classes  ?

  • C30B 23/02 - Epitaxial-layer growth
  • C30B 23/00 - Single-crystal growth by condensing evaporated or sublimed materials
  • C30B 23/06 - Heating of the deposition chamber, the substrate, or the materials to be evaporated
  • C30B 29/36 - Carbides
  • C30B 35/00 - Apparatus not otherwise provided for, specially adapted for the growth, production or after-treatment of single crystals or of a homogeneous polycrystalline material with defined structure

16.

CHAMFERED SILICON CARBIDE SUBSTRATE AND METHOD OF CHAMFERING

      
Application Number 17976191
Status Pending
Filing Date 2022-10-28
First Publication Date 2023-03-16
Owner SiCrystal GmbH (Germany)
Inventor
  • Ecker, Bernhard
  • Müller, Ralf
  • Stockmeier, Matthias
  • Vogel, Michael
  • Weber, Arnd-Dietrich

Abstract

The present invention relates to a chamfered silicon carbide substrate which is essentially monocrystalline, and to a corresponding method of chamfering a silicon carbide substrate. A silicon carbide substrate according to the invention comprises a main surface (102), wherein an orientation of said main surface (102) is such that a normal vector ({right arrow over (O)}) of the main surface (102) includes a tilt angle with a normal vector ({right arrow over (N)}) of a basal lattice plane (106) of the substrate, and a chamfered peripheral region (110), wherein a surface of the chamfered peripheral region includes a bevel angle with said main surface, wherein said bevel angle is chosen so that, in more than 75% of the peripheral region, normal vectors ({right arrow over (F)}_i) of the chamfered peripheral region (110) differ from the normal vector of the basal lattice plane by less than a difference between the normal vector of the main surface and the normal vector of the basal lattice plane of the substrate.

IPC Classes  ?

  • H01L 21/02 - Manufacture or treatment of semiconductor devices or of parts thereof
  • C30B 29/36 - Carbides
  • H01L 29/04 - Semiconductor bodies characterised by their crystalline structure, e.g. polycrystalline, cubic or particular orientation of crystalline planes
  • H01L 29/16 - Semiconductor bodies characterised by the materials of which they are formed including, apart from doping materials or other impurities, only elements of Group IV of the Periodic System in uncombined form
  • H01L 29/34 - Semiconductor bodies having polished or roughened surface the imperfections being on the surface
  • C30B 23/02 - Epitaxial-layer growth

17.

MONOCRYSTALLINE SIC SUBSTRATES HAVING AN ASYMMETRICAL GEOMETRY AND METHOD OF PRODUCING SAME

      
Application Number EP2022060040
Publication Number 2022/219129
Status In Force
Filing Date 2022-04-14
Publication Date 2022-10-20
Owner SICRYSTAL GMBH (Germany)
Inventor
  • Okamoto, Kuniyoshi
  • Vogel, Michael

Abstract

The present invention provides a monocrystalline SiC substrate with an asymmetric shape for enhancing substrate stiffness against thermal induced deformations, the substrate comprising: a main region, and an asymmetric region located at a peripheral region of the substrate and adjacent to the main region, wherein the asymmetric region is inclined inwards, relative to the main region, to provide an asymmetric shape to the substrate. The present invention also provides a method of producing one or more substrates with an asymmetric shape, comprising: performing a multi-wire sawing process in which one or more substrates are cut with an wire- sawing web from an ingot placed on a stage, and cutting the one or more substrates with the asymmetric shape by controlling a relative movement between the wire-sawing web and the stage, the relative movement causing the wire-sawing web to describe a non-linear sawing path across the ingot to cut the asymmetric shape.

IPC Classes  ?

  • C30B 29/36 - Carbides
  • C30B 33/00 - After-treatment of single crystals or homogeneous polycrystalline material with defined structure
  • B28D 5/04 - Fine working of gems, jewels, crystals, e.g. of semiconductor materialApparatus therefor by tools other than of rotary type, e.g. reciprocating tools
  • B28D 5/00 - Fine working of gems, jewels, crystals, e.g. of semiconductor materialApparatus therefor
  • H01L 21/02 - Manufacture or treatment of semiconductor devices or of parts thereof

18.

METHOD FOR PRODUCING AN SIC VOLUME SINGLE CRYSTAL, HOMOGENOUS SCREW DISLOCATION DISTRIBUTION, AND SIC SUBSTRATE

      
Application Number EP2022056909
Publication Number 2022/194975
Status In Force
Filing Date 2022-03-17
Publication Date 2022-09-22
Owner SICRYSTAL GMBH (Germany)
Inventor
  • Ecker, Bernhard
  • Müller, Ralf
  • Stockmeier, Matthias
  • Vogel, Michael
  • Weber, Arnd-Dietrich

Abstract

The method according to the invention is designed to produce at least one SiC volume single crystal (2) using a sublimation growth method. Prior to beginning the growth process, an SiC seed crystal (8) with a growth surface (18) is arranged in a crystal growth region of a culture crucible, and SiC source material is introduced into an SiC storage region of the culture crucible. During the growth process, an SiC growth gas phase is generated in the crystal growth region at a growth temperature of up to 2400 °C and a growth pressure between 0.1 mbar and 100 mbar by sublimating the SiC source material and transporting the sublimated gaseous components into the crystal growth region, an SiC volume single crystal (2) growing in said growth gas phase as a result of a precipitation from the SiC growth gas phase on the SiC seed crystal (8). Prior to beginning the growth process, the SiC seed crystal (8) on the growth surface (18) is examined for the presence of seed screw dislocations (20), wherein the growth surface (18) is divided into seed segments, a corresponding local screw dislocation seed segment density is ascertained for each seed segment, and the growth surface is processed such that nucleation centers (22) are generated in each seed segment having a local screw dislocation seed segment density that lies above a screw dislocation seed total density, which is ascertained for the entire growth surface (18), at least by a factor of 1.5 to 4. Each nucleation center (22) is a starting point for at least one respective compensation screw dislocation during the growth process which is then carried out.

IPC Classes  ?

19.

PRODUCTION PROCESS FOR A SIC BULK SINGLE CRYSTAL HAVING INHOMOGENOUS SCREW DISLOCATION DISTRIBUTION, AND SIC SUBSTRATE

      
Application Number EP2022056911
Publication Number 2022/194977
Status In Force
Filing Date 2022-03-17
Publication Date 2022-09-22
Owner SICRYSTAL GMBH (Germany)
Inventor
  • Ecker, Bernhard
  • Müller, Ralf
  • Stockmeier, Matthias
  • Vogel, Michael
  • Weber, Arnd-Dietrich

Abstract

The invention relates to a process for producing at least one SiC bulk single crystal (2) by means of a sublimation growing process, wherein, prior to starting the growing process, a SiC seed crystal (8) having a growth surface is arranged in a crystal growth region of a growing crucible and SiC source material is introduced into a SiC storage region of the growing crucible. During the growing process, at a growing temperature of up to 2400°C and a growing pressure between 0.1 mbar and 100 mbar, by means of sublimation of the SiC source material and by means of transporting the sublimated gaseous components into the crystal growth region, a SiC growth gas phase is generated therein, in which a SiC bulk single crystal (2) grows on the SiC seed crystal by means of precipitation out of the SiC growth gas phase. Prior to starting the growing process, at room temperature, a mechanical stress is introduced into the SiC seed crystal (8) in order to induce, under the influence of the mechanical stress, a dislocation movement in seed screw dislocations (24) present in the SiC seed crystal (8), such that seed screw dislocations (24), which move closer to one another in conjunction with their respective dislocation movement, recombine with one another and cancel one another out.

IPC Classes  ?

20.

Silicon carbide substrate and method of growing SiC single crystal boules

      
Application Number 17544868
Grant Number 11781245
Status In Force
Filing Date 2021-12-07
First Publication Date 2022-03-24
Grant Date 2023-10-10
Owner SICRYSTAL GMBH (Germany)
Inventor
  • Vogel, Michael
  • Ecker, Bernhard
  • Müller, Ralf
  • Stockmeier, Matthias
  • Weber, Arnd-Dietrich

Abstract

−3, from the mean concentration of this dopant in the peripheral region (104).

IPC Classes  ?

  • C30B 29/36 - Carbides
  • C30B 23/00 - Single-crystal growth by condensing evaporated or sublimed materials

21.

SIC CRYSTALLINE SUBSTRATES WITH AN OPTIMAL ORIENTATION OF LATTICE PLANES FOR FISSURE REDUCTION AND METHOD OF PRODUCING SAME

      
Application Number 17380607
Status Pending
Filing Date 2021-07-20
First Publication Date 2022-01-27
Owner SiCrystal GmbH (Germany)
Inventor
  • Vogel, Michael
  • Schmitt, Erwin
  • Weber, Arnd-Dietrich
  • Barz, Ralph-Uwe
  • Bannspach, Dominik

Abstract

The present invention provides monocrystalline 4H—SiC substrates having a specific orientation of its crystal structure which is set such as to reduce or even eliminate the occurrence of cracks or fissures during mechanical processing, and method of producing same. The monocrystalline 4H—SiC substrate, which has a longitudinal axis and an at least partially curved lateral surface parallel to said longitudinal axis, is characterized in that the crystal structure of the 4H—SiC substrate is oriented with respect to the longitudinal axis such that at each position on the lateral surface of the semi-finished product there is a line segment which is intersected by at least a predetermined minimum number of parallel cleavage planes of the {1010} form per unit length, wherein the line segment is defined by a plane tangent to the lateral surface at said position.

IPC Classes  ?

  • C30B 29/36 - Carbides
  • H01L 29/16 - Semiconductor bodies characterised by the materials of which they are formed including, apart from doping materials or other impurities, only elements of Group IV of the Periodic System in uncombined form
  • H01L 29/04 - Semiconductor bodies characterised by their crystalline structure, e.g. polycrystalline, cubic or particular orientation of crystalline planes

22.

CRYSTAL STRUCTURE ORIENTATION IN SEMICONDUCTOR SEMI-FINISHED PRODUCTS AND SEMICONDUCTOR SUBSTRATES FOR FISSURE REDUCTION AND METHOD OF SETTING SAME

      
Application Number EP2021065505
Publication Number 2022/017677
Status In Force
Filing Date 2021-06-09
Publication Date 2022-01-27
Owner SICRYSTAL GMBH (Germany)
Inventor
  • Vogel, Michael
  • Schmitt, Erwin
  • Weber, Arnd-Dietrich
  • Barz, Ralph-Uwe
  • Bannspach, Dominik

Abstract

Crystal structure orientation in semiconductor semi-finished products and semiconductor substrates for fissure reduction and method of setting same The present invention provides monocrystalline semiconductor semi-finished product and substrates having a predetermined orientation of its crystal structure relative to a central axis and a at least partially curved lateral surface of the semi-finished product or substrate that reduces or even eliminates the occurrence of cracks during mechanical processing, and a method of producing such semiconductor semi-finished products and/or substrates. In the predetermined orientation, a first crystallographic axis perpendicular to a set of first cleavage planes makes a first tilt angle with a plane transverse to the central axis, and a second crystallographic axis perpendicular to a set of second cleavage planes and to the first crystallographic axis makes a second tilt angle with said plane transverse to the central axis so that each set of parallel cleavage planes that are symmetrically equivalent to either the first or second cleavage planes are inclined relative to the central axis.

IPC Classes  ?

  • C30B 29/06 - Silicon
  • C30B 29/40 - AIIIBV compounds
  • C30B 29/48 - AIIBVI compounds
  • C30B 33/00 - After-treatment of single crystals or homogeneous polycrystalline material with defined structure
  • H01L 21/02 - Manufacture or treatment of semiconductor devices or of parts thereof

23.

SiC crystals with an optimal orientation of lattice planes for fissure reduction and method of producing same

      
Application Number 17380690
Grant Number 12195878
Status In Force
Filing Date 2021-07-20
First Publication Date 2022-01-27
Grant Date 2025-01-14
Owner SiCrystal GMBH (Germany)
Inventor
  • Vogel, Michael
  • Schmitt, Erwin
  • Weber, Arnd-Dietrich
  • Barz, Ralph-Uwe
  • Bannspach, Dominik

Abstract

10} form per unit length, wherein the line segment is defined by a plane tangent to the lateral surface at said position.

IPC Classes  ?

  • C30B 33/00 - After-treatment of single crystals or homogeneous polycrystalline material with defined structure
  • C30B 29/36 - Carbides

24.

SiCrystal

      
Application Number 1606695
Status Registered
Filing Date 2021-02-02
Registration Date 2021-02-02
Owner SiCrystal GmbH (Germany)
NICE Classes  ?
  • 01 - Chemical and biological materials for industrial, scientific and agricultural use
  • 09 - Scientific and electric apparatus and instruments
  • 40 - Treatment of materials; recycling, air and water treatment,

Goods & Services

Chemical products for industrial and scientific purposes, namely polycrystalline or monocrystalline materials, in particular for use in mechanics, optics and semiconductor technology and in particular for use as gemstones; crystalline semiconductor material; semiconductor single crystals; all aforementioned products based on silicon carbide or on aluminium oxide or on II-VI semiconductors, in particular zinc oxide, zinc sulphide, zinc selenide, magnesium oxide, magnesium sulphide, magnesium selenide, cadmium selenide or cadmium telluride, or on III-V semiconductors, in particular boron nitride, aluminium nitride, gallium nitride, gallium phosphide or gallium arsenide. Electronic materials, namely semiconductor materials, in particular in form of wafers, as far as included in this class; semiconductors; semiconductor wafers; wafers for power electronic components; all aforesaid products based on silicon carbide or on aluminium oxide or on II-VI semiconductors, in particular zinc oxide, zinc sulphide, zinc selenide, magnesium oxide, magnesium sulphide, magnesium selenide, cadmium selenide or cadmium telluride, or on III-V semiconductors, in particular boron nitride, aluminium nitride, gallium nitride, gallium phosphide or gallium arsenide. Processing of semiconductor materials, semiconductor wafers or semiconductor components; customer-specific contract manufacturing or processing of semiconductor wafers; all aforesaid services for semiconductors based on silicon carbide or aluminium oxide or on II-VI semiconductors, in particular zinc oxide, zinc sulphide, zinc selenide, magnesium oxide, magnesium sulphide, magnesium selenide, cadmium selenide or cadmium telluride, or on III-V semiconductors, in particular boron nitride, aluminium nitride, gallium nitride, gallium phosphide or gallium arsenide.

25.

Silicon carbide substrate and method of growing SiC single crystal boules

      
Application Number 16492044
Grant Number 11236438
Status In Force
Filing Date 2018-03-07
First Publication Date 2021-05-20
Grant Date 2022-02-01
Owner SICRYSTAL GMBH (Germany)
Inventor
  • Vogel, Michael
  • Ecker, Bernhard
  • Müller, Ralf
  • Stockmeier, Matthias
  • Weber, Arnd-Dietrich

Abstract

−3, from the mean concentration of this dopant in the peripheral region (104).

IPC Classes  ?

  • C30B 23/00 - Single-crystal growth by condensing evaporated or sublimed materials
  • C30B 29/36 - Carbides

26.

SICRYSTAL

      
Serial Number 79317613
Status Registered
Filing Date 2021-02-02
Registration Date 2022-07-26
Owner SiCrystal GmbH (Germany)
NICE Classes  ?
  • 40 - Treatment of materials; recycling, air and water treatment,
  • 01 - Chemical and biological materials for industrial, scientific and agricultural use
  • 09 - Scientific and electric apparatus and instruments

Goods & Services

Mechanical processing of semiconductor elements, semiconductor wafers or semiconductor components; chemical processing of semiconductor elements, semiconductor wafers or semiconductor components; customer-specific contract manufacturing of semiconductor wafers; all aforesaid services for semiconductors based on silicon carbide or aluminium oxide or on II-VI semiconductors, in particular zinc oxide, zinc sulphide, zinc selenide, magnesium oxide, magnesium sulphide, magnesium selenide, cadmium selenide or cadmium telluride, or on III-V semiconductors, in particular boron nitride, aluminium nitride, gallium nitride, gallium phosphide or gallium arsenide Chemicals for industrial and scientific purposes, namely, polycrystalline or monocrystalline materials, being chemicals for use in mechanics, optics and semiconductor technology, all aforementioned goods based on silicon carbide or on aluminium oxide or on II-VI semiconductors, in particular zinc oxide, zinc sulphide, zinc selenide, magnesium oxide, magnesium sulphide, magnesium selenide, cadmium selenide or cadmium telluride, or on III-V semiconductors, in particular boron nitride, aluminium nitride, gallium nitride, gallium phosphide or gallium arsenide; chemicals for industrial purposes in the nature of crystalline semiconductor material based on silicon carbide or on aluminium oxide or on II-VI semiconductors, in particular zinc oxide, zinc sulphide, zinc selenide, magnesium oxide, magnesium sulphide, magnesium selenide, cadmium selenide or cadmium telluride, or on III-V semiconductors, in particular boron nitride, aluminium nitride, gallium nitride, gallium phosphide or gallium arsenide; chemicals for industrial purposes in the nature of semiconductor single crystals based on silicon carbide or on aluminium oxide or on II-VI semiconductors, in particular zinc oxide, zinc sulphide, zinc selenide, magnesium oxide, magnesium sulphide, magnesium selenide, cadmium selenide or cadmium telluride, or on III-V semiconductors, in particular boron nitride, aluminium nitride, gallium nitride, gallium phosphide or gallium arsenide Electronic materials, namely, semiconductor materials in the form of semiconductor wafers; semiconductors; semiconductor wafers; wafers for power electronic components, namely, wafers for integrated circuits; all aforesaid goods based on silicon carbide or on aluminium oxide or on II-VI semiconductors, in particular zinc oxide, zinc sulphide, zinc selenide, magnesium oxide, magnesium sulphide, magnesium selenide, cadmium selenide or cadmium telluride, or on III-V semiconductors, in particular boron nitride, aluminium nitride, gallium nitride, gallium phosphide or gallium arsenide

27.

System for horizontal growth of high-quality semiconductor single crystals by physical vapor transport

      
Application Number 16894337
Grant Number 11479875
Status In Force
Filing Date 2020-06-05
First Publication Date 2021-01-07
Grant Date 2022-10-25
Owner SiCrystal GmbH (Germany)
Inventor
  • Schmitt, Erwin
  • Vogel, Michael

Abstract

A system for manufacturing one or more single crystals of a semiconductor material by physical vapor transport (PVT) includes a reactor having an inner chamber adapted to accommodate a PVT growth structure for growing the one or more single crystals inside. The reactor accommodates the PVT growth structure in an orientation with a growth direction of the one or more single crystals inside the PVT growth structure substantially horizontal with respect to a direction of gravity or within an angle from horizontal of less than a predetermined value.

IPC Classes  ?

  • C30B 35/00 - Apparatus not otherwise provided for, specially adapted for the growth, production or after-treatment of single crystals or of a homogeneous polycrystalline material with defined structure
  • C30B 25/16 - Controlling or regulating
  • C30B 25/08 - Reaction chambersSelection of materials therefor
  • C30B 29/36 - Carbides

28.

System for efficient manufacturing of a plurality of high-quality semiconductor single crystals by physical vapor transport

      
Application Number 16894428
Grant Number 11560643
Status In Force
Filing Date 2020-06-05
First Publication Date 2021-01-07
Grant Date 2023-01-24
Owner SiCrystal GmbH (Germany)
Inventor
  • Schmitt, Erwin
  • Vogel, Michael

Abstract

A system for simultaneously manufacturing more than one single crystal of a semiconductor material by physical vapor transport (PVT) includes a plurality of reactors and a common vacuum channel connecting at least a pair of reactors of the plurality of reactors. Each reactor has an inner chamber adapted to accommodate a PVT growth structure for growth of a single semiconductor crystal. The common vacuum channel is connectable to a vacuum pump system for creating and/or controlling a common gas phase condition in the inner chambers of the pair of reactors.

IPC Classes  ?

  • C30B 35/00 - Apparatus not otherwise provided for, specially adapted for the growth, production or after-treatment of single crystals or of a homogeneous polycrystalline material with defined structure
  • C30B 23/00 - Single-crystal growth by condensing evaporated or sublimed materials
  • C30B 23/06 - Heating of the deposition chamber, the substrate, or the materials to be evaporated
  • C30B 29/36 - Carbides

29.

Production method and growth arrangement for producing a bulk SiC single crystal by arranging at least two insulation cylinder components to control a variation in a volume element density

      
Application Number 16791028
Grant Number 11261536
Status In Force
Filing Date 2020-02-14
First Publication Date 2020-08-20
Grant Date 2022-03-01
Owner SiCrystal GmbH (Germany)
Inventor
  • Ecker, Bernhard
  • Mueller, Ralf
  • Stockmeier, Matthias
  • Vogel, Michael
  • Weber, Arnd-Dietrich

Abstract

A bulk SiC single crystal is produced by placing an SiC seed crystal in a crystal growth region of a growth crucible, and introducing SiC source material into an SiC reservoir region, and the bulk SiC single crystal is grown on from an SiC growth gas phase by deposition. The growth crucible is surrounded by an insulation that extends rotationally symmetrically and axially towards the central middle longitudinal axis. The insulation has mutually concentric insulation cylinder components and the insulation is notionally divided into insulation ring segments that are in turn notionally divided into volume elements. The insulation cylinder components are selected and positioned relative to one another such that every volume element of the insulation ring segment in question has a volume element density varying by not more than 10% from an average insulation ring segment density of the insulation ring segment in question.

IPC Classes  ?

  • C30B 23/06 - Heating of the deposition chamber, the substrate, or the materials to be evaporated
  • C23C 14/06 - Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the coating material
  • C23C 14/24 - Vacuum evaporation
  • C30B 29/36 - Carbides

30.

Silicon carbide substrate and method of growing SiC single crystal boules

      
Application Number 16492000
Grant Number 11624124
Status In Force
Filing Date 2018-03-07
First Publication Date 2020-03-05
Grant Date 2023-04-11
Owner SICRYSTAL GMBH (Germany)
Inventor
  • Vogel, Michael
  • Ecker, Bernhard
  • Müller, Ralf
  • Stockmeier, Matthias
  • Weber, Arnd-Dietrich

Abstract

3 from the mean concentration of this dopant in the peripheral region (104).

IPC Classes  ?

  • B32B 5/16 - Layered products characterised by the non-homogeneity or physical structure of a layer characterised by features of a layer formed of particles, e.g. chips, chopped fibres, powder
  • C30B 29/36 - Carbides
  • C30B 23/02 - Epitaxial-layer growth
  • C30B 29/06 - Silicon

31.

Chamfered silicon carbide substrate and method of chamfering

      
Application Number 16409698
Grant Number 11041254
Status In Force
Filing Date 2019-05-10
First Publication Date 2019-11-14
Grant Date 2021-06-22
Owner SICRYSTAL GMBH (Germany)
Inventor
  • Vogel, Michael
  • Ecker, Bernhard
  • Müller, Ralf
  • Weber, Arnd-Dietrich
  • Stockmeier, Matthias

Abstract

The present invention relates to a chamfered silicon carbide substrate which is essentially monocrystalline, and to a corresponding method of chamfering a silicon carbide substrate. The silicon carbide substrate (100) comprises a main surface (102) and a circumferential end face surface (114) which is essentially perpendicular to the main surface (102), and a chamfered peripheral region (110), wherein a first bevel surface (106) of the chamfered peripheral region (110) includes a first bevel angle (a1) with said main surface (102), and wherein a second bevel surface (108) of the chamfered peripheral region (110) includes a second bevel angle (a2) with said end face surface (114), wherein, in more than 75% of the peripheral region, said first bevel angle (a1) has a value in a range between 20° and 50°, and said second bevel angle (a2) has a value in a range between 45° and 75°.

IPC Classes  ?

  • B24B 9/02 - Machines or devices designed for grinding edges or bevels on work or for removing burrsAccessories therefor characterised by a special design with respect to properties of materials specific to articles to be ground
  • C30B 29/36 - Carbides
  • C30B 29/60 - Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape characterised by shape
  • C30B 33/00 - After-treatment of single crystals or homogeneous polycrystalline material with defined structure
  • H01L 21/02 - Manufacture or treatment of semiconductor devices or of parts thereof
  • B24B 9/06 - Machines or devices designed for grinding edges or bevels on work or for removing burrsAccessories therefor characterised by a special design with respect to properties of materials specific to articles to be ground of non-metallic inorganic material, e.g. stone, ceramics, porcelain
  • B24B 37/04 - Lapping machines or devicesAccessories designed for working plane surfaces

32.

Chamfered silicon carbide substrate and method of chamfering

      
Application Number 16409706
Grant Number 11515140
Status In Force
Filing Date 2019-05-10
First Publication Date 2019-11-14
Grant Date 2022-11-29
Owner SICRYSTAL GMBH (Germany)
Inventor
  • Ecker, Bernhard
  • Müller, Ralf
  • Stockmeier, Matthias
  • Vogel, Michael
  • Weber, Arnd-Dietrich

Abstract

The present invention relates to a chamfered silicon carbide substrate which is essentially monocrystalline, and to a corresponding method of chamfering a silicon carbide substrate. A silicon carbide substrate according to the invention comprises a main surface (102), wherein an orientation of said main surface (102) is such that a normal vector ({right arrow over (O)}) of the main surface (102) includes a tilt angle with a normal vector ({right arrow over (N)}) of a basal lattice plane (106) of the substrate, and a chamfered peripheral region (110), wherein a surface of the chamfered peripheral region includes a bevel angle with said main surface, wherein said bevel angle is chosen so that, in more than 75% of the peripheral region, normal vectors ({right arrow over (F)}_i) of the chamfered peripheral region (110) differ from the normal vector of the basal lattice plane by less than a difference between the normal vector of the main surface and the normal vector of the basal lattice plane of the substrate.

IPC Classes  ?

  • H01L 21/02 - Manufacture or treatment of semiconductor devices or of parts thereof
  • H01L 29/16 - Semiconductor bodies characterised by the materials of which they are formed including, apart from doping materials or other impurities, only elements of Group IV of the Periodic System in uncombined form
  • H01L 29/34 - Semiconductor bodies having polished or roughened surface the imperfections being on the surface
  • H01L 29/04 - Semiconductor bodies characterised by their crystalline structure, e.g. polycrystalline, cubic or particular orientation of crystalline planes
  • C30B 29/36 - Carbides
  • C30B 23/02 - Epitaxial-layer growth

33.

SILICON CARBIDE SUBSTRATE AND METHOD OF GROWING SiC SINGLE CRYSTAL BOULES

      
Application Number EP2018055597
Publication Number 2018/177706
Status In Force
Filing Date 2018-03-07
Publication Date 2018-10-04
Owner SICRYSTAL GMBH (Germany)
Inventor
  • Vogel, Michael
  • Ecker, Bernhard
  • Müller, Ralf
  • Stockmeier, Matthias
  • Weber, Arnd-Dietrich

Abstract

The present invention relates to a silicon carbide (SiC) substrate with improved mechanical and electrical characteristics. Furthermore, the invention relates to a method for producing a bulk SiC crystal in a physical vapor transport growth system. The silicon carbide substrate comprises an inner region (102) which constitutes at least 30 % of a total surface area of said substrate (100), a ring shaped peripheral region (104) radially surrounding the inner region (102), wherein a mean concentration of a dopant in the inner region (102) differs by at maximum 5⋅1018 cm-3, preferably 1⋅1018 cm-3, from the mean concentration of this dopant in the peripheral region (104).

IPC Classes  ?

  • C30B 23/00 - Single-crystal growth by condensing evaporated or sublimed materials
  • C30B 29/36 - Carbides

34.

SILICON CARBIDE SUBSTRATE AND METHOD OF GROWING SiC SINGLE CRYSTAL BOULES

      
Application Number EP2018055627
Publication Number 2018/177707
Status In Force
Filing Date 2018-03-07
Publication Date 2018-10-04
Owner SICRYSTAL GMBH (Germany)
Inventor
  • Dr. Vogel, Michael
  • Dr. Ecker, Bernhard
  • Dr. Müller, Ralf
  • Dr. Stockmeier, Matthias
  • Dr. Weber, Arnd-Dietrich

Abstract

The present invention relates to a silicon carbide (SiC) substrate with improved mechanical and electrical characteristics. Furthermore, the invention relates to a method for producing a bulk SiC crystal in a physical vapor transport growth system. The silicon carbide substrate comprises an inner region (102) which constitutes at least 30 % of a total surface area of said substrate (100), a ring shaped peripheral region (104) radially surrounding the inner region (102), wherein a mean concentration of a dopant in the inner region (102) differs by at least 1 - 1018 cm-3 from the mean concentration of this dopant in the peripheral region (104).

IPC Classes  ?

  • C30B 23/00 - Single-crystal growth by condensing evaporated or sublimed materials
  • C30B 29/36 - Carbides

35.

Method for producing a vanadium-doped silicon carbide volume monocrystal, and vanadium-doped silicon carbide substrate

      
Application Number 14848560
Grant Number 09732438
Status In Force
Filing Date 2015-09-09
First Publication Date 2016-03-10
Grant Date 2017-08-15
Owner SICRYSTAL GMBH (Germany)
Inventor
  • Mueller, Ralf
  • Stockmeier, Matthias
  • Vogel, Michael

Abstract

−3. The transport of material from the SiC supply area to the growth boundary surface is additionally influenced. The growing temperature at the growth boundary surface and the material transport to the growth boundary surface are influenced largely independently of one another.

IPC Classes  ?

  • B32B 3/00 - Layered products comprising a layer with external or internal discontinuities or unevennesses, or a layer of non-planar shapeLayered products comprising a layer having particular features of form
  • C30B 23/02 - Epitaxial-layer growth
  • C30B 29/36 - Carbides
  • H01B 1/04 - Conductors or conductive bodies characterised by the conductive materialsSelection of materials as conductors mainly consisting of carbon-silicon compounds, carbon, or silicon
  • C30B 23/00 - Single-crystal growth by condensing evaporated or sublimed materials

36.

Monocrystalline SiC substrate with a non-homogeneous lattice plane course

      
Application Number 14258345
Grant Number 09590046
Status In Force
Filing Date 2014-04-22
First Publication Date 2014-08-14
Grant Date 2017-03-07
Owner SICRYSTAL GMBH (Germany)
Inventor
  • Straubinger, Thomas
  • Vogel, Michael
  • Wohlfart, Andreas

Abstract

A method is used for producing an SiC volume monocrystal by sublimation growth. During growth, by sublimation of a powdery SiC source material and by transport of the sublimated gaseous components into the crystal growth region, an SiC growth gas phase is produced there. The SiC volume monocrystal grows by deposition from the SiC growth gas phase on the SiC seed crystal. The SiC seed crystal is bent during a heating phase before such that an SiC crystal structure with a non-homogeneous course of lattice planes is adjusted, the lattice planes at each point have an angle of inclination relative to the direction of the center longitudinal axis and peripheral angles of inclination at a radial edge of the SiC seed crystal differ in terms of amount by at least 0.05° and at most by 0.2° from a central angle of inclination at the site of the center longitudinal axis.

IPC Classes  ?

  • C30B 23/02 - Epitaxial-layer growth
  • H01L 29/16 - Semiconductor bodies characterised by the materials of which they are formed including, apart from doping materials or other impurities, only elements of Group IV of the Periodic System in uncombined form
  • C30B 29/36 - Carbides
  • H01L 29/04 - Semiconductor bodies characterised by their crystalline structure, e.g. polycrystalline, cubic or particular orientation of crystalline planes
  • H01L 29/06 - Semiconductor bodies characterised by the shapes, relative sizes, or dispositions of the semiconductor regions

37.

Physical vapor transport growth system for simultaneously growing more than one SiC single crystal and method of growing

      
Application Number 13768605
Grant Number 09376764
Status In Force
Filing Date 2013-02-15
First Publication Date 2013-11-21
Grant Date 2016-06-28
Owner SICRYSTAL GMBH (Germany)
Inventor
  • Straubinger, Thomas Ludwig
  • Vogel, Michael
  • Wohlfart, Andreas
  • Schmitt, Erwin

Abstract

The present invention relates to a configuration and in particular a physical vapor transport growth system for simultaneously growing more than one silicon carbide (SiC) bulk crystal. Furthermore, the invention relates to a method for producing such a bulk SiC crystal. A physical vapor transport growth system for simultaneously growing more than one SiC single crystal boule comprises a crucible containing two growth compartments for arranging at least one SiC seed crystal in each of them, and a source material compartment for containing a SiC source material, wherein said source material compartment is arranged symmetrically between said growth compartments and is separated from each of the growth compartments by a gas permeable porous membrane.

IPC Classes  ?

  • C30B 23/06 - Heating of the deposition chamber, the substrate, or the materials to be evaporated
  • C30B 23/02 - Epitaxial-layer growth
  • C30B 23/00 - Single-crystal growth by condensing evaporated or sublimed materials
  • C30B 29/36 - Carbides

38.

Production method for an SiC volume monocrystal with a non-homogeneous lattice plane course and a monocrystalline SiC substrate with a non-homogeneous lattice plane course

      
Application Number 13338639
Grant Number 08758510
Status In Force
Filing Date 2011-12-28
First Publication Date 2013-07-04
Grant Date 2014-06-24
Owner SICRYSTAL GMBH (Germany)
Inventor
  • Straubinger, Thomas
  • Vogel, Michael
  • Wohlfart, Andreas

Abstract

A method is used for producing an SiC volume monocrystal by sublimation growth. During growth, by sublimation of a powdery SiC source material and by transport of the sublimated gaseous components into the crystal growth region, an SiC growth gas phase is produced there. The SiC volume monocrystal grows by deposition from the SiC growth gas phase on the SiC seed crystal. The SiC seed crystal is bent during a heating phase before such that an SiC crystal structure with a non-homogeneous course of lattice planes is adjusted, the lattice planes at each point have an angle of inclination relative to the direction of the center longitudinal axis and peripheral angles of inclination at a radial edge of the SiC seed crystal differ in terms of amount by at least 0.05° and at most by 0.2° from a central angle of inclination at the site of the center longitudinal axis.

IPC Classes  ?

  • C30B 21/02 - Unidirectional solidification of eutectic materials by normal casting or gradient freezing

39.

Production method for an SiC volume monocrystal with a homogeneous lattice plane course and a monocrystalline SiC substrate with a homogeneous lattice plane course

      
Application Number 13338694
Grant Number 08747982
Status In Force
Filing Date 2011-12-28
First Publication Date 2013-07-04
Grant Date 2014-06-10
Owner SICRYSTAL GMBH (Germany)
Inventor
  • Straubinger, Thomas
  • Vogel, Michael
  • Wohlfart, Andreas

Abstract

A method is used for producing an SiC volume monocrystal by sublimation growth. Before the beginning of growth, an SiC seed crystal is arranged in a crystal growth region of a growth crucible and powdery SiC source material is introduced into an SiC storage region of the growth crucible. During the growth, by sublimation of the powdery SiC source material and by transport of the sublimated gaseous components into the crystal growth region, an SiC growth gas phase is produced there. The SiC volume monocrystal having a central center longitudinal axis grows by deposition from the SiC growth gas phase on the SiC seed crystal. The SiC seed crystal is heated substantially without bending during a heating phase before the beginning of growth, so that an SiC crystal structure with a substantially homogeneous course of lattice planes is provided in the SiC seed crystal.

IPC Classes  ?

40.

Production method for a bulk SiC single crystal with a large facet and monocrystalline SiC substrate with homogeneous resistance distribution

      
Application Number 12852642
Grant Number 08865324
Status In Force
Filing Date 2010-08-09
First Publication Date 2011-12-08
Grant Date 2014-10-21
Owner SICRYSTAL GMBH (Germany)
Inventor
  • Straubinger, Thomas
  • Vogel, Michael
  • Wohlfart, Andreas

Abstract

A method is used to produce a bulk SiC single crystal. A seed crystal is arranged in a crystal growth region of a growing crucible. An SiC growth gas phase is produced in the crystal growth region. The bulk SiC single crystal having a central longitudinal mid-axis grows by deposition from the SiC growth gas phase, the deposition taking place on a growth interface of the growing bulk SiC single crystal. The SiC growth gas phase is at least partially fed from an SiC source material and contains at least one dopant from the group of nitrogen, aluminum, vanadium and boron. At least in a central main growth region of the growth interface arranged about the longitudinal mid-axis, a lateral temperature gradient of at most 2 K/cm measured perpendicular to the longitudinal mid-axis is adjusted and maintained in this range. The bulk SiC single crystal has a large facet region.

IPC Classes  ?

  • B32B 3/02 - Layered products comprising a layer with external or internal discontinuities or unevennesses, or a layer of non-planar shapeLayered products comprising a layer having particular features of form characterised by features of form at particular places, e.g. in edge regions
  • B32B 17/10 - Layered products essentially comprising sheet glass, or fibres of glass, slag or the like comprising glass as the main or only constituent of a layer, next to another layer of a specific substance of synthetic resin
  • B32B 9/00 - Layered products essentially comprising a particular substance not covered by groups
  • B32B 19/00 - Layered products essentially comprising natural mineral fibres or particles, e.g. asbestos, mica
  • C30B 23/02 - Epitaxial-layer growth
  • C30B 29/36 - Carbides