A method for measuring a substrate in the form of a lithography mask or a mask blank for producing a lithography mask comprises the alignment of a substrate coordinate system (SKS), predetermined by a first marker structure, relative to a position measurement system, a measurement of actual position data (IST) of a second marker structure with predetermined intended position data (POS) in the substrate coordinate system (SKS), and an establishment of a transformation (T) of the substrate coordinate system (SKS) into a transformed substrate coordinate system (tSKS), wherein the transformation (T) is established in such a way that deviations between the actual position data (IST) and the intended position data (POS) of the second marker structure are reduced.
G01J 1/42 - Photométrie, p. ex. posemètres photographiques en utilisant des détecteurs électriques de radiations
G01B 11/27 - Dispositions pour la mesure caractérisées par l'utilisation de techniques optiques pour mesurer des angles ou des cônesDispositions pour la mesure caractérisées par l'utilisation de techniques optiques pour tester l'alignement des axes pour tester l'alignement des axes
FUNDACIÓ INSTITUT DE CIÈNCIES FOTÒNIQUES (Espagne)
INSTITUCIO CATALANA DE RECERCA I ESTUDIS AVANCATS (Espagne)
CARL ZEISS SMS GMBH (Allemagne)
Inventeur(s)
Pruneri, Prof. Valerio
Carrilero, Dr. Albert
Peters, Dr. Jan-Hendrik
Abrégé
The present inventions relates to a substrate for a photolithographic mask comprising a coating deposited on a rear surface of the substrate, wherein the coating comprises (a) at least one electrically conducting layer, and (b) wherein a thickness of the at least one layer is smaller than 30 nm, preferably smaller than 20 nm, and most preferably smaller than 10 nm.
G03F 1/22 - Masques ou masques vierges d'imagerie par rayonnement d'une longueur d'onde de 100 nm ou moins, p. ex. masques pour rayons X, masques en extrême ultra violet [EUV]Leur préparation
G03F 1/38 - Masques à caractéristiques supplémentaires, p. ex. marquages pour l'alignement ou les tests, ou couches particulièresLeur préparation
3.
METHOD AND APPARATUS FOR ANALYZING AND FOR REMOVING A DEFECT OF AN EUV PHOTOMASK
The invention refers to a method for analyzing a defect of an optical element for the extreme ultra-violet wavelength range comprising at least one substrate and at least one multi-layer structure, the method comprising the steps: (a) determining first data by exposing the defect to ultra-violet radiation, (b) determining second data by scanning the defect with a scanning probe microscope, (c) determining third data by scanning the defect with a scanning particle microscope, and (d) combining the first, the second and the third data.
G03F 1/22 - Masques ou masques vierges d'imagerie par rayonnement d'une longueur d'onde de 100 nm ou moins, p. ex. masques pour rayons X, masques en extrême ultra violet [EUV]Leur préparation
The present invention refers to an apparatus and a method for investigating an object with a scanning particle microscope (120) and at least one scanning probe microscope (140) with a probe, wherein the scanning particle microscope (120) and the at least one scanning probe microscope (140) are spaced with respect to each other in a common vacuum chamber (102) so that a distance between the optical axis of the scanning particle microscope (120) and the measuring point (195) of the scanning probe microscope (140) in the direction perpendicular to the optical axis of the scanning particle microscope (120) is larger than the maximum field of view of both the scanning probe microscope (140) and the scanning particle microscope (120), wherein the method comprises the step of determining the distance between the measuring point (195) of the scanning probe microscope (140) and the optical axis of the scanning particle microscope (120).
H01J 37/28 - Microscopes électroniques ou ioniquesTubes à diffraction d'électrons ou d'ions avec faisceaux de balayage
H01J 37/244 - DétecteursComposants ou circuits associés
H01J 37/304 - Commande des tubes par une information en provenance des objets, p. ex. signaux de correction
G01Q 10/00 - Dispositions pour le balayage ou le positionnement, c.-à-d. dispositions pour commander de manière active le mouvement ou la position de la sonde
5.
METHOD AND APPARATUS FOR PROCESSING A SUBSTRATE WITH A FOCUSSED PARTICLE BEAM
The invention relates to a method for processing a substrate with a focussed particle beam which incidents on the substrate, the method comprising the steps of: (a) generating at least one reference mark on the substrate using the focused particle beam and at least one processing gas, (b) determining a reference position of the at least one reference mark, (c) processing the substrate using the reference position of the reference mark, and (d) removing the at least one reference mark from the substrate.
H01J 37/304 - Commande des tubes par une information en provenance des objets, p. ex. signaux de correction
H01J 37/305 - Tubes à faisceau électronique ou ionique destinés aux traitements localisés d'objets pour couler, fondre, évaporer ou décaper
G03F 1/74 - Réparation ou correction des défauts dans un masque par un faisceau de particules chargées [CPB charged particle beam], p. ex. réparation ou correction de défauts par un faisceau d'ions focalisé
6.
APPARATUS AND METHOD FOR ANALYZING AND MODIFYING A SPECIMEN SURFACE
The invention refers to a probe assembly (310) for a scanning probe microscope (100) which comprises at least one first probe (315, 320) adapted for analyzing a specimen (120, 620), at least one second probe (325, 330, 335) adapted for modifying the specimen(120, 620) and at least one motion element (370) associated with the probe assembly (310) and adapted for scanning one of the probes (315, 320) being in a working position across a surface of the specimen (120, 620) so that the at least one first probe (315, 320) interacts with the specimen (120, 620) whereas the at least one second probe (325, 330, 335) is in a neutral position in which it does not interact with the specimen (120, 620) and to bring the at least one second probe (325, 330, 335) into a position so that the at least one second probe can modify a region of the specimen (120, 620) analyzed with the at least one first probe (315, 320).
G01Q 80/00 - Applications des techniques de sonde à balayage, autres que les techniques SPM
G03F 1/00 - Originaux pour la production par voie photomécanique de surfaces texturées, p. ex. masques, photomasques ou réticulesMasques vierges ou pellicules à cet effetRéceptacles spécialement adaptés à ces originauxLeur préparation
7.
METHOD FOR CHARACTERIZING A STRUCTURE ON A MASK AND DEVICE FOR CARRYING OUT SAID METHOD
A method is provided for characterizing a mask having a structure, comprising the steps of: - illuminating said mask under at least one illumination angle with monochromatic illuminating radiation, so as to produce a diffraction pattern of said structure that includes at least two maxima of adjacent diffraction orders, - capturing said diffraction pattern, - determining the intensities of the maxima of the adjacent diffraction orders, - determining an intensity quotient of the intensities. A mask inspection microscope for characterizing a mask in conjunction with the performance of the inventive method is also provided.
G03F 1/00 - Originaux pour la production par voie photomécanique de surfaces texturées, p. ex. masques, photomasques ou réticulesMasques vierges ou pellicules à cet effetRéceptacles spécialement adaptés à ces originauxLeur préparation
The invention relates to a method for correcting at least one error on wafers processed by at least one photolithographic mask, the method comprises:(a) measuring the at least one error on a wafer at a wafer processing site,and (b) modifying the at least one photolithographic mask by introducing at least one arrangement of local persistent modifications in the at least one photolithographic mask.
G03F 1/00 - Originaux pour la production par voie photomécanique de surfaces texturées, p. ex. masques, photomasques ou réticulesMasques vierges ou pellicules à cet effetRéceptacles spécialement adaptés à ces originauxLeur préparation
G03F 1/72 - Réparation ou correction des défauts dans un masque
A system for processing a substrate includes a light source to provide light pulses, a stage to support a substrate, optics to focus the light pulses onto the substrate, a scanner to scan the light pulses across the substrate, a computer to control properties of the light pulses and the scanning of the light pulses such that color centers are generated in various regions of the substrate, and at least one of (i) an ultraviolet light source to irradiate the substrate with ultraviolet light or (ii) a heater to heat the substrate after formation of the color centers to stabilize a transmittance spectrum of the substrate.
The invention relates to a method for analyzing a defect of a photolithographic mask for an extreme ultraviolet (EUV) wavelength range (EUV mask) comprising the steps of: (a) generating at least one focus stack relating to the defect using an EUV mask inspection tool, (b) determining a surface configuration of the EUV mask at a position of the defect, (c) providing model structures having the determined surface configuration which have different phase errors and generating the respective focus stacks, and (d) determining a three dimensional error structure of the EUV mask defect by comparing the at least one generated focus stack of the defect and the generated focus stacks of the model structures.
The invention relates to a method for determining a performance of a photolithographic mask at an exposure wavelength with the steps of scanning at least one electron beam across at least one portion of the photolithographic mask, measuring signals generated by the at least one electron beam interacting with the at least one portion of the photolithographic mask, and determining the performance of the at least one portion of the photolithographic mask at the exposure wavelength based on the measured signals.
G01N 23/225 - Recherche ou analyse des matériaux par l'utilisation de rayonnement [ondes ou particules], p. ex. rayons X ou neutrons, non couvertes par les groupes , ou en mesurant l'émission secondaire de matériaux en utilisant des microsondes électroniques ou ioniques
G01N 23/22 - Recherche ou analyse des matériaux par l'utilisation de rayonnement [ondes ou particules], p. ex. rayons X ou neutrons, non couvertes par les groupes , ou en mesurant l'émission secondaire de matériaux
12.
MASK INSPECTION MICROSCOPE WITH VARIABLE ILLUMINATION SETTING
During mask inspection it is necessary to identify defects which also occur during wafer exposure. Therefore, the aerial images generated in the resist and on the detector have to be as far as possible identical. In order to achieve an equivalent image generation, during mask inspection the illumination and, on the object side, the numerical aperture are adapted to the scanner used. The invention relates to a mask inspection microscope for variably setting the illumination. It serves for generating an image of the structure (150) of a reticle (145) arranged in an object plane in a field plane of the mask inspection microscope. It comprises a light source (5) that emits projection light, at least one illumination beam path (3, 87, 88), and a diaphragm for generating a resultant intensity distribution of the projection light in a pupil plane (135) of the illumination beam path (3, 87, 88) that is optically conjugate with respect to the object plane. According to the invention, the diaphragm is embodied in such a way that the resultant intensity distribution of the projection light has at least one further intensity value between a minimum and a maximum intensity value.
G03F 1/00 - Originaux pour la production par voie photomécanique de surfaces texturées, p. ex. masques, photomasques ou réticulesMasques vierges ou pellicules à cet effetRéceptacles spécialement adaptés à ces originauxLeur préparation
13.
DETERMINATION OF THE RELATIVE POSITION OF TWO STRUCTURES
A method is provided for determining the position of a first structure (8a) relative to a second structure (8b) or a part thereof, said method having the steps of: a) providing a first picture (Fl) having a multiplicity of pixels and which contains the first structure, b) providing a second picture (F2) having a multiplicity of pixels and which contains the second structure, c) forming an optimization function with the displacement of the two pictures relative to one another as parameter, the optimization function overlying the two pictures and masking the overlay such that in a determination of an extreme value of the optimization function a contribution is made only by the region of the overlay that corresponds to the second structure or the part thereof, d) ascertaining the extreme value of the optimization function and determining the optimal value of the displacement based on the extreme value of the optimization function, and e) determining the position of the first structure relative to the second structure or a part thereof with the optimal displacement value ascertained in step d).
G03F 1/00 - Originaux pour la production par voie photomécanique de surfaces texturées, p. ex. masques, photomasques ou réticulesMasques vierges ou pellicules à cet effetRéceptacles spécialement adaptés à ces originauxLeur préparation
14.
METHOD AND CALIBRATION MASK FOR CALIBRATING A POSITION MEASURING APPARATUS
A method for calibrating an apparatus (10) for the position measurement of measurement structures (14) on a lithography mask (12) comprises the following steps: qualifying a calibration mask (40) comprising diffractive structures (42) arranged thereon by determining positions of the diffractive structures (42) with respect to one another by means of interferometric measurement, determining positions of measurement structures (14) arranged on the calibration mask (40) with respect to one another by means of the apparatus, and calibrating the apparatus (10) by means of the positions determined for the measurement structures (14) and also the positions determined for the diffractive structures (42).
G03F 9/00 - Mise en registre ou positionnement d'originaux, de masques, de trames, de feuilles photographiques, de surfaces texturées, p. ex. automatique
15.
METHOD FOR DETERMINING A REPAIR SHAPE OF A DEFECT ON OR IN THE VICINITY OF AN EDGE OF A SUBSTRATE OF A PHOTOMASK
The invention relates to a method for determining a repair shape (60, 260) of a defect (30, 200) on or in the vicinity of an edge (32, 232) of a substrate (100), comprising the steps of scanning the defect (30, 200) using a scanning probe microscope for determining a three-dimensional contour (40, 240) of the defect (30, 200), scanning the defect (30, 200) using a scanning electron microscope for determining the course (50, 250) of the at least one edge (32, 232) of the substrate (100), and determining the repair shape (60, 260) of the defect (30, 200) from a combination of the three-dimensional contour (40, 240) and the course (50, 250) of the at least one edge (32, 232).
G01Q 40/02 - Leurs normes d'étalonnage ou procédés de fabrication
G03F 1/00 - Originaux pour la production par voie photomécanique de surfaces texturées, p. ex. masques, photomasques ou réticulesMasques vierges ou pellicules à cet effetRéceptacles spécialement adaptés à ces originauxLeur préparation
16.
METHOD AND DEVICE FOR MEASURING THE RELATIVE LOCAL POSITION ERROR OF ONE OF THE SECTIONS OF AN OBJECT THAT IS EXPOSED SECTION BY SECTION
A method for measuring the relative local position error of one of the sections of an object that is exposed section by section, in particular of a lithography mask or of a wafer, is provided, each exposed section having a plurality of measurement marks, wherein a) a region of the object which is larger than the one section is imaged in magnified fashion and is detected as an image, b) position errors of the measurement marks contained in the detected image are determined on the basis of the detected image, c) corrected position errors are derived by position error components which are caused by the magnified imaging and detection being extracted from the determined position errors of the measurement marks, d) the relative local position error of the one section is derived on the basis of the corrected position errors of the measurement marks.
G03F 1/00 - Originaux pour la production par voie photomécanique de surfaces texturées, p. ex. masques, photomasques ou réticulesMasques vierges ou pellicules à cet effetRéceptacles spécialement adaptés à ces originauxLeur préparation
H01J 37/304 - Commande des tubes par une information en provenance des objets, p. ex. signaux de correction
H01J 37/317 - Tubes à faisceau électronique ou ionique destinés aux traitements localisés d'objets pour modifier les propriétés des objets ou pour leur appliquer des revêtements en couche mince, p. ex. implantation d'ions
17.
MICROSCOPE FOR RETICLE INSPECTION WITH VARIABLE ILLUMINATION SETTINGS
During mask inspection predominantly defects of interest which also occur during wafer exposure. Therefore, the aerial images generated in the resist and on the detector have to be as far as possible identical. In order to achieve an equivalent image generation, during mask inspection the illumination and, on the object side, the numerical aperture are adapted to the scanner used. A further form of mask inspection microscopes serves for measuring the reticles and is also referred to as a registration tool. The illumination is used by the stated conventional and abaxial illumination settings for optimizing the contrast. The accuracy of the registration measurement is thus increased. The invention relates to a mask inspection microscope for variably setting the illumination. It serves for generating an image of the structure (150) of a reticle (145) arranged in an object plane in a field plane of the mask inspection microscope. It comprises a light source (5) that emits projection light, at least one illumination beam path (3, 87, 88), and a first diaphragm for generating a resultant intensity distribution of the projection light in a pupil plane (135) of the illumination beam path (3, 87, 88), that is optically conjugate with respect to the object plane. According to the invention, the mask inspection microscope has at least one further diaphragm for generating the resultant intensity distribution. The first diaphragm and the at least one further diaphragm influence the resultant intensity distribution of the projection light at least partly at different locations of the pupil plane (135).
G03F 1/00 - Originaux pour la production par voie photomécanique de surfaces texturées, p. ex. masques, photomasques ou réticulesMasques vierges ou pellicules à cet effetRéceptacles spécialement adaptés à ces originauxLeur préparation
18.
METHOD AND APPARATUS FOR MEASURING STRUCTURES ON PHOTOLITHOGRAPHY MASKS
The invention relates to a method for measuring structures on masks (1) for photolithography, wherein firstly the mask (1) is mounted on a spatially movable platform (2). The position of the platform (2) is controlled in this case. The structure on the mask (1) is illuminated with illumination light from an illumination light source which emits coherent light. The light coming from the mask (1) is imaged onto a detection device (6) by an imaging optical unit (4) and detected. The detected signals are evaluated in an evaluation device (7) and the positions and dimensions of the structures are determined. The invention also relates to an apparatus by which these method steps, in particular, can be carried out. In this case, the accuracy of the position and dimension determination is increased by the properties of the illumination light being coordinated with the structure to be measured. For this purpose, the illumination device (3, 3') has setting means for coordinating the properties of the illumination light with the structure to be measured.
G03F 1/00 - Originaux pour la production par voie photomécanique de surfaces texturées, p. ex. masques, photomasques ou réticulesMasques vierges ou pellicules à cet effetRéceptacles spécialement adaptés à ces originauxLeur préparation
The invention relates to a method for electron beam induced deposition of electrically conductive material from a metal carbonyl. Said method consists of the following steps: at least one electron beam is provided on one area of a substrate (90), the at least one metal carbonyl is stored at a first temperature, and then heated to at least a second temperature prior to placing it on the area on which the at least one electron beam strikes the substrate (90).
C23C 16/48 - Revêtement chimique par décomposition de composés gazeux, ne laissant pas de produits de réaction du matériau de la surface dans le revêtement, c.-à-d. procédés de dépôt chimique en phase vapeur [CVD] caractérisé par le procédé de revêtement par irradiation, p. ex. par photolyse, radiolyse ou rayonnement corpusculaire
C23C 16/16 - Revêtement chimique par décomposition de composés gazeux, ne laissant pas de produits de réaction du matériau de la surface dans le revêtement, c.-à-d. procédés de dépôt chimique en phase vapeur [CVD] caractérisé par le dépôt d'un matériau métallique à partir de métaux carbonyles
C23C 16/04 - Revêtement de parties déterminées de la surface, p. ex. au moyen de masques
H01L 21/768 - Fixation d'interconnexions servant à conduire le courant entre des composants distincts à l'intérieur du dispositif
20.
METHOD FOR ELECTRON BEAM INDUCED ETCHING OF LAYERS CONTAMINATED WITH GALLIUM
The invention relates to a method for electron beam induced etching of a layer (120, 122) contaminated with gallium. Said method consists of the following steps: at least one first compound containing halogen is provided as an etching gas on one area on which an electron beam strikes the layer (120, 220) and at least one second compound containing halogen is provided as a precursor gas for removing gallium from said area.
H01L 21/3213 - Gravure physique ou chimique des couches, p. ex. pour produire une couche avec une configuration donnée à partir d'une couche étendue déposée au préalable
H01L 21/3065 - Gravure par plasmaGravure au moyen d'ions réactifs
The invention relates to a method for electron beam induced etching of a material (100, 200). Said method consists of the following steps: at least one etching gas is provided on one area of the material (100, 200) on which an electron beam strikes said material (100, 200) and at least one passivation gas that is used to slow down or prevent spontaneous etching by the at least one etching gas is provided.
H01L 21/3065 - Gravure par plasmaGravure au moyen d'ions réactifs
H01L 21/3213 - Gravure physique ou chimique des couches, p. ex. pour produire une couche avec une configuration donnée à partir d'une couche étendue déposée au préalable
The invention relates to a method for analyzing masks for photolithography. In this method, an aerial image of the mask for a first focus setting is generated and stored in an aerial image data record. The aerial image data record is transferred to an algorithm that simulates a photolithographic wafer exposure on the basis of this data record. In this case, the simulation is carried out for a plurality of mutually different energy doses. Then, at a predetermined height from the wafer surface, contours which separate regions with photoresist from those regions without photoresist are in each case determined. The result, that is to say the contours, are stored for each of the energy doses in each case in a contour data record with the energy dose as a parameter. Finally, the contour data records are combined to form a three-dimensional multicontour data record with the reciprocal of the energy dose as a third dimension, and, on the basis of the transitions from zero to values different than zero in the contours, a three-dimensional profile of the reciprocal of the energy dose depending on the position on the mask is generated. This profile, the so-called effective aerial image, is output or stored or automatically evaluated. The same can also occur with sections through said profile.
Provision is made for a microscope for examining a reflecting object (3) in an object plane (OE), with the object being illuminated by electromagnetic radiation with a wavelength of less than 100 nm, the microscope having imaging optics (4) which image an illuminated section of the object (3) in an image plane (BE) in a magnified fashion, and with the imaging optics (4) comprising mirror optics (8) which image the section in an intermediate image plane (ZE), a scintillator layer (9) arranged in the intermediate image plane (ZE), and magnifying optics (10) arranged downstream of the scintillator layer (9), said magnifying optics imaging an intermediate image generated by the scintillator layer in the image plane (BE) in a magnified fashion, the mirror optics (8) having precisely two mirrors (11, 12) which are designed such that the intermediate image is telecentric on both sides.
G21K 4/00 - Écrans de conversion pour transformer une distribution spatiale de particules ou de rayonnements ionisants en images visibles, p. ex. écrans fluorescents
G21K 7/00 - Microscopes à rayons gamma ou à rayons X
The invention relates to a method and an apparatus for measuring masks (1) for photolithography. In this case, structures to be measured on the mask (1) on a movable mask carrier (2) are illuminated and imaged as an aerial image onto a detector (6), the illumination being set in a manner corresponding to the illumination in a photolithography scanner during a wafer exposure. A selection of positions at which the structures to be measured are situated on the mask (1) is predetermined, and the positions on the mask (1) in the selection are successively brought to the focus of an imaging optical system (5), where they are illuminated and in each case imaged as a magnified aerial image onto a detector (6), and the aerial images are subsequently stored. The structure properties of the structures are then analyzed by means of predetermined evaluation algorithms. The accuracy of the setting of the positions and of the determination of structure properties is increased in this case.
G03F 1/00 - Originaux pour la production par voie photomécanique de surfaces texturées, p. ex. masques, photomasques ou réticulesMasques vierges ou pellicules à cet effetRéceptacles spécialement adaptés à ces originauxLeur préparation
The present invention relates to a method for processing an object with miniaturized structures, having the steps of : feeding a reaction gas onto a surface of the object; processing the object by directing an energetic beam onto a processing site in a region, which is to be processed, on the surface of the object, in order to deposit material on the object or to remove material from the object, detecting interaction products of the beam with the object, and deciding whether the processing of the object must be continued or can be terminated with the aid of information which is obtained from the detected interaction products of the beam with the object, the region to be processed being subdivided into a number of surface segments, and the interaction products detected upon the beam striking regions of the same surface segment being integrated to form a total signal in order to determine whether processing of the object must be continued or can be terminated.
G03F 1/00 - Originaux pour la production par voie photomécanique de surfaces texturées, p. ex. masques, photomasques ou réticulesMasques vierges ou pellicules à cet effetRéceptacles spécialement adaptés à ces originauxLeur préparation
26.
AUTOFOCUS DEVICE AND AUTOFOCUSING METHOD FOR AN IMAGING DEVICE
An autofocus device for an imaging device is provided, which has an imaging optic (9) having a first focal plane (20) and an object table (11) for moving an object (3) to be imaged relative to the first focal plane (20), wherein said autofocus device (1) comprises a) an image recording module (9) having a second focal plane, the location thereof relative to the first focal plane (20) being known, b) a lighting module (BM) for imaging a focusing image along a lighting beam path in a focusing image plane such that, if the object is positioned in a target position at a predetermined distance to the second focal plane, the lighting beam path is folded because of reflection on the object and the focusing image, which lies in the focusing image plane, intersects the second focal plane or lies therein, and c) a control module, which activates the object table (11) to focus the imaging device (9) so that the object (3) is positioned in the target position, from a signal of the image recording module, which the image recording module generates on the basis of the recording thereof of the focusing image when the object is positioned in the target position, derives the deviation of the object position from the target position, and, based on the derived deviation, the predetermined distance, and the relative location of the first and second focal planes, activates the object table so that the object is positioned in the first focal plane.
In general, in one aspect, a methodincludes determining a critical dimension (CD) distribution on a photomaskby measuring deep Ultra-Violet(DUV) transmission across the photomask.
G03F 1/00 - Originaux pour la production par voie photomécanique de surfaces texturées, p. ex. masques, photomasques ou réticulesMasques vierges ou pellicules à cet effetRéceptacles spécialement adaptés à ces originauxLeur préparation
The invention relates to a method for repairing phase shift masks for photolithography in which a phase shift mask is checked for the presence of defects and, if defects are present, (i) an analysis is conducted as to which of the defects negatively affect imaging properties of the phase shift mask, (ii) said defects are improved, (iii) the imaging properties of the improved phase shift mask are analyzed and the maintenance of a predetermined tolerance criterion is checked, and (iv) the two preceding steps (ii) and (iii) are optionally repeated multiple times if the imaging properties do not meet the predetermined tolerance criterion. In such a method, the imaging properties are analyzed in that, for each defect to be improved, a test variable is determined for the defect as a function of focus and illumination, and at least one additional non-defective point on the phase shift mask in the immediate vicinity of the defect is determined, and a minimum allowable deviation between the test variable for the defect and the non-defective point is predetermined as the tolerance criterion.
G03F 1/00 - Originaux pour la production par voie photomécanique de surfaces texturées, p. ex. masques, photomasques ou réticulesMasques vierges ou pellicules à cet effetRéceptacles spécialement adaptés à ces originauxLeur préparation
The invention relates to a measuring system comprising a table (2) for a mask (3) or a wafer that can be displaced along a first direction, a positioning unit (18) having a measuring rod (19) that extends in the first direction and a scanning head (20). The relative position of said unit can be detected in the first direction. The system further comprises a sensor head (21) spaced from a first side (13) of the table (2) running transversely relative to the first direction, said head measuring the distance (d) to the first side (13) in a non-contact manner and emitting a distance signal and being mechanically connected to the scanning head (20) or the measuring rod (19), in order to form a measuring unit (23) movable along the first direction, a drive for moving the measuring unit (23), and a control device controlling the drive during a displacement of the table (2) along the first direction such that the sensor head (21) remains spaced from the first side (13) and determines the position of the table (2) in the first direction based on the change of the relative position of the measuring rod (19) and scanning head (20) and based on the distance signal.
G03F 1/00 - Originaux pour la production par voie photomécanique de surfaces texturées, p. ex. masques, photomasques ou réticulesMasques vierges ou pellicules à cet effetRéceptacles spécialement adaptés à ces originauxLeur préparation
The invention relates to a holding apparatus for holding an object, preferably a photolithography mask (1), with the holding apparatus having at least one contact surface (8) on which the object rests, and with the object having at least one optically active surface (2), which is bounded by one or more edges (4) and points essentially downwards in the holding apparatus. In the case of a holding apparatus such as this, the at least one contact surface (8) includes an angle (α) other than zero with the optically active surface (2), such that the object rests on the at least one contact surface (8) only on the edges (4) of the optically active surface (2).
The present invention relates to a mask inspection method in which the defects determined on the masks examined are subjected to a classification with regard to their lithographic relevance in the wafer exposure process. In the method according to the invention for determining lithographically relevant mask defects, the lithographic relevance of defects is determined by generating and analysizing aerial images, wherein the aerial images are generated either by the illumination and imaging of the masks under lithographic conditions and direct measurement at the wafer level or by measurement of the transmission and phase at the mask surface and calculation of the aerial image for specific lithography settings and, for classifying the defects, various rules that take account of the lithographic relevance of the defects are employed and defective masks are thus sorted out. With the method according to the invention, the intention, in particular, is to examine the defects detected on lithography masks with regard to their relevance to the wafer exposure process. In this case, it is possible to classify defects both in the transparent regions and in the non-transparent regions.
G01N 21/95 - Recherche de la présence de criques, de défauts ou de souillures caractérisée par le matériau ou la forme de l'objet à analyser
G03F 1/00 - Originaux pour la production par voie photomécanique de surfaces texturées, p. ex. masques, photomasques ou réticulesMasques vierges ou pellicules à cet effetRéceptacles spécialement adaptés à ces originauxLeur préparation
The invention relates to a method for analyzing a group of at least two masks for photolithography, wherein each of the masks comprises a substructure of a total structure, which is to be introduced in a layer of the wafer in the lithographic process, and the total structure is introduced in the layer of the wafer by introducing the substructures in sequence. In this method, a first aerial image of a first one of the at least two masks is recorded, digitized and stored in a data structure. Then, a second aerial image of a second one of the at least two masks is recorded, digitized and stored in a data structure. A combination image is generated from the data of the first and second aerial images, which combination image is represented and/or evaluated.
G01N 21/95 - Recherche de la présence de criques, de défauts ou de souillures caractérisée par le matériau ou la forme de l'objet à analyser
G03F 1/00 - Originaux pour la production par voie photomécanique de surfaces texturées, p. ex. masques, photomasques ou réticulesMasques vierges ou pellicules à cet effetRéceptacles spécialement adaptés à ces originauxLeur préparation
G03F 7/00 - Production par voie photomécanique, p. ex. photolithographique, de surfaces texturées, p. ex. surfaces impriméesMatériaux à cet effet, p. ex. comportant des photoréservesAppareillages spécialement adaptés à cet effet
The invention relates to a microscope illumination system comprising at least one laser light source emitting a light beam (1), beam-guiding optical elements for generating an illumination beam path comprising marked planes, such as pupil and field planes, and a homogenising arrangement for forming a light field homogenised in terms of intensity and oriented towards the sample to be observed. According to the invention, the above-mentioned microscope illumination system is provided with a homogenising arrangement wherein optical elements are provided in a plurality of successive sections (4, 5, 6) of the illumination beam path. Said optical elements reduce the coherence of the laser light, homogenise the intensity of the light beam (1) in a pupil plane (2) of the illumination beam path, and homogenise the intensity of the light beam (1) in a field plane (3) of the illumination beam path. An optical system for imaging the homogenised light beam (1) on the sample is arranged downstream of the homogenising arrangement.
A method is provided for determining the relative overlay shift of stacked layers, said method comprising the steps of: a) providing a reference image including a reference pattern that comprises first and second pattern elements; b) providing a measurement image of a measurement pattern, which comprises a first pattern element formed by a first one of the layers and a second pattern element formed by a second one of the layers; c) weighting the reference or measurement image such that a weighted first image is generated, in which the first pattern element is emphasized relative to the second pattern element; d) determining the relative shift of the first pattern element on the basis of the weighted first image and of the measurement or reference image not weighted in step c); e) weighting the reference or measurement image such that a weighted second image is generated, in which the second pattern element is emphasized relative to the first pattern element; f) determining the relative shift of the second pattern element on the basis of the weighted second image and of the measurement or reference image not weighted in step e); g) determining the relative overlay shift on the basis of the relative shifts determined in steps d) and f).
The invention relates to an apparatus for measurement of substrates, comprising a carrier (2) for receiving the substrate to be measured; a measurement objective which images onto a detector a portion of the substrate held by the carrier (2); a measurement device by which the position of the carrier (2) is imaged onto a detector (12); a measurement device by which the position of the carrier (2) holding the substrate is determined relative to the measurement objective, with the measurement device comprising at least one laser interferometer (5) for position determination; a first flushing device which passes a first flushing medium in a laminar flow through the apparatus for generating a constant measurement atmosphere, as well as an adjustment device by which the carrier (2) can be moved relative to the measurement objective. In such an apparatus, a second flushing device is provided which passes a second flushing medium through the region of the measurement device in which the at least one laser interferometer (5) is located.
G03F 1/00 - Originaux pour la production par voie photomécanique de surfaces texturées, p. ex. masques, photomasques ou réticulesMasques vierges ou pellicules à cet effetRéceptacles spécialement adaptés à ces originauxLeur préparation
An apparatus (1 ) for measuring the positions of marks (M) on a mask (2) is provided, said apparatus comprising a mask holder (3) for holding the mask (2), a recording unit (7) for recording the marks (M) of the mask (2) held by the mask holder (3), an actuating module (12) for moving the mask holder (3) and the recording unit (7) relative to each other, and an evaluating module (17), which numerically calculates the gravity-induced sagging of the mask (2) in the mask holder (3) and determines the positions of the marks (M) on the mask (2), based on the calculated sagging, the recordings made by the recording unit (7) and the relative movement between the mask holder (3) and the recording unit (7), wherein, prior to calculating said sagging, the present position of the mask (2) in the mask holder (3) is determined and is taken into consideration in said numerical calculation, and/or the geometrical dimensions of the mask (2) are taken into consideration in said numerical calculation of sagging.
G03F 1/00 - Originaux pour la production par voie photomécanique de surfaces texturées, p. ex. masques, photomasques ou réticulesMasques vierges ou pellicules à cet effetRéceptacles spécialement adaptés à ces originauxLeur préparation
There is provided a mask metrology apparatus (1) comprising: a mask holder (2) for holding a mask (3) having an object plane with a plurality of marks (4), a mask positioning device (5) for positioning the mask holder in a predetermined position, measurement optics (6) for measuring the position of the marks (4) of the mask (3) held by the mask holder (2), wherein the mask holder (2) holds the mask (3) with the object plane substantially parallel to the direction of gravity and supports the mask (3) along a horizontal edge (13, 35) of the mask (3) with a uniformly distributed force against gravity.
G01B 11/00 - Dispositions pour la mesure caractérisées par l'utilisation de techniques optiques
G03F 9/00 - Mise en registre ou positionnement d'originaux, de masques, de trames, de feuilles photographiques, de surfaces texturées, p. ex. automatique
The invention relates to a catadioptric objective (OB) comprising a first convex mirror face (S1), a second concave mirror face (S2), a first lens (L1) between the two mirror faces (S1, S2), and at least one other lens, all of the lenses being formed from the same material.
An imaging optical system (1) comprising an objective (2) and a tube optical system (3) is provided, wherein both the objective (2) and the tube optical system (3) are in each case embodied as a pure mirror optical system.
A microscope is provided for space-resolved measurement of a predetermined structure (12), said microscope comprising a source of radiation (2), which emits electromagnetic radiation (3) of a predetermined wavelength, an optical system (13), which irradiates the electromagnetic radiation (3) onto the structure (12) to be measured and images the structure (12), irradiated with the electromagnetic radiation, onto a detector (9), wherein the optical system (13) has two eigen polarization conditions (Z1, Z2), and the apparatus includes a polarization module (4) by which a polarization condition can be set for the electromagnetic radiation (3) of the source of radiation (2), which condition includes only components of a known quantity which correspond to the eigen polarization conditions (Z1, Z2).
The invention relates to an apparatus for measurement of structures on photolithographic masks (1), said apparatus comprising at least one coherent-light emitting source of illumination (3, 7), which illuminates the photolithographic mask (1) via an illumination beam path (4, 8); a spatially displaceable stage (2) receiving the photolithographic mask (1) whose position is controlled by means of laser interferometry; an imaging device, which images light coming from the photolithographic mask (1) onto a detecting device (13); as well as an evaluating device (14) coupled to the detecting device, said evaluating device (14) evaluating the detected signals and determining the positions of the structures. In such an apparatus, at least one field stop (15, 16) is provided in the illumination beam path (4, 8), said field stop (15, 16) having a size which corresponds to an area around the structure during imaging onto the photolithographic mask (1), which area appears identical for all structures.
G03F 1/00 - Originaux pour la production par voie photomécanique de surfaces texturées, p. ex. masques, photomasques ou réticulesMasques vierges ou pellicules à cet effetRéceptacles spécialement adaptés à ces originauxLeur préparation
The invention relates to a device for measuring lithography masks, comprising a reticle carrier (1) for the lithography mask (2) to be measured, a measuring objective (6) for reproducing, on a detector, a section of the lithography mask (2) held by the reticle carrier (1), a measuring module (8) for measuring the position of the reticle carrier (1) in relation to the measuring objective (6), and an adjustment module (3) by which means the reticle carrier (1) can be moved in order to bring it into a pre-determined position in relation to the measuring objective (6). The measuring objective (6) and the measuring module (8) are directly locally fixed on a carrier for the measuring method.
G03F 9/00 - Mise en registre ou positionnement d'originaux, de masques, de trames, de feuilles photographiques, de surfaces texturées, p. ex. automatique
G03F 1/00 - Originaux pour la production par voie photomécanique de surfaces texturées, p. ex. masques, photomasques ou réticulesMasques vierges ou pellicules à cet effetRéceptacles spécialement adaptés à ces originauxLeur préparation
A calibrating method for a mask writer is provided, said method comprising the steps of: a) measuring the existing deformation of a first mask when writing a first mask structure of the first mask using the mask writer; b) measuring the distortion of the written first mask structure as well as the existing deformation of the first mask when measuring the distortion; c) measuring the deformation of the first mask in the holder of an exposure device; d) deriving a correction for the mask writer from the deformations of the first mask which were measured in steps a)-c) and from the distortion measured in step b), said correction causing the mask writer, when writing a second mask structure of a second mask, to pre-distort said second mask structure to be written, such that the second mask structure's deformation-induced distortion appearing in the holder of the exposure device is compensated for at least partially.
A method is provided for determining the position of a structure on a carrier, relative to a reference point of the carrier, said method comprising the steps of: a) providing an image including a reference structure; b) recording an image of the structure on the carrier by means of a recording device, with a known recording position relative to the reference points; c) superimposing the two images to form one superimposed image; d) determining the image distance of the two structures in the superimposed image; e) shifting the two structures in the superimposed image relative to one another, depending on the determined image distance; f) checking whether the determined image distance is below a predetermined maximum value; wherein, if the image distance is below the maximum value, the method is continued in step g), and, if the image distance is not below the maximum value, steps d) - f) are repeated, taking into account the determined image distance/distances; g) determining the position of the structure relative to the reference point, on the basis of the recording position in step b) and of the image distance/image distances determined in step(s) d).
G03F 9/00 - Mise en registre ou positionnement d'originaux, de masques, de trames, de feuilles photographiques, de surfaces texturées, p. ex. automatique
There is provided a method for determining residual errors, comprising the following steps: in a first step, a test plate comprising a first pattern is used, and in a second step, a test plate comprising a second pattern which is reflected and/or rotated with respect to the first step is used.
METHOD AND APPARATUS FOR THE SPATIALLY RESOLVED DETERMINATION OF THE PHASE AND AMPLITUDE OF THE ELECTROMAGNETIC FIELD IN THE IMAGE PLANE OF AN IMAGE OF AN OBJECT
The invention relates to a method for the spatially resolved determination of the phase and amplitude of the electromagnetic field in the image plane of an image of an object. Here, images are produced by virtue of the fact that the object is illuminated using coherent light and is imaged into an image plane, light is detected in the image plane in a spatially resolved manner in pixels, wherein for each pixel the intensity of the light is determined, stored in image points and the image points are assigned to an image. First, a first then at least one further image are produced, wherein the phase and/or the amplitude of the light is modified in a predefined manner and the modification for each image differs from those for the other images. The phase in the image of the object in the image plane is determined in a spatially resolved manner from the images produced. The invention also relates to an apparatus for implementing the method. In such a method, the phase and/or the amplitude of the light is/are modified by a spatial frequency filtering in a pupil plane between object and image plane.
G01J 9/00 - Mesure du déphasage des rayons lumineuxRecherche du degré de cohérenceMesure de la longueur d'onde des rayons lumineux
G02B 27/46 - Systèmes utilisant des filtres spatiaux
G03F 1/00 - Originaux pour la production par voie photomécanique de surfaces texturées, p. ex. masques, photomasques ou réticulesMasques vierges ou pellicules à cet effetRéceptacles spécialement adaptés à ces originauxLeur préparation
47.
METHOD AND DEVICE FOR ANALYSING THE IMAGING BEHAVIOUR OF AN OPTICAL IMAGING ELEMENT
The invention relates to a method for analysing the imaging behaviour of a first optical imaging element, whereby an object is imaged into an image plane by a second optical imaging element and light in the image plane is detected in a spatially resolved manner, the two optical imaging elements differing in terms of at least one imaging characteristic. Values are determined for the intensity and for at least one second characteristic of the light, said values being then stored in image points, and processed in an emulation step. An emulation image is produced, emulating the imaging of the object by the first optical imaging element, taking into account the influence of the second characteristic. A series of images is produced by dividing a range of values of the second characteristic into subdomains, associating an image with each subdomain, and associating the corresponding intensity value with the image points of each image, in case the value of the second characteristic, associated with the image point, falls in the subdomain associated with the respective image. Otherwise, a pre-determined intensity value is associated therewith. The series of images is converted into a series of intermediate images in the emulation step. A constant value of the second characteristic is used in the emulation for each intermediate image, said value originating from the respective subdomain and differing from the values of the second characteristic for the other intermediate images. The intermediate images are then combined to form an emulation image.
A charged particle beam exposure system has a blanking aperture array (31) having groups of apertures (53) controlled by shift registers (75), wherein different inputs (C) to the shift registers influence a different number of apertures. Charged particle beamlets traversing the apertures are scanned across a charged particle sensitive substrate in synchronism with a clock signal of the shift registers.
H01J 37/04 - Dispositions des électrodes et organes associés en vue de produire ou de commander la décharge, p. ex. dispositif électronoptique, dispositif ionoptique
H01J 37/317 - Tubes à faisceau électronique ou ionique destinés aux traitements localisés d'objets pour modifier les propriétés des objets ou pour leur appliquer des revêtements en couche mince, p. ex. implantation d'ions
A charged particle system comprises a particle source for generating a beam of charged particles and a particle-optical projection system. The particle-optical projection system comprises a focusing first magnetic lens (403) comprising an outer pole piece (411) having a radial inner end (411’), and an inner pole piece (412) having a lowermost end (412’) disposed closest to the radial inner end of the outer pole piece, a gap being formed by those; a focusing electrostatic lens (450) having at least a first electrode (451) and a second electrode (450) disposed in a region of the gap; and a controller (C ) configured to control a focusing power of the first electrostatic lens based on a signal indicative of a distance of a surface of a substrate from a portion of the first magnetic lens disposed closest to the substrate.
H01J 37/147 - Dispositions pour diriger ou dévier la décharge le long d'une trajectoire déterminée
H01J 37/317 - Tubes à faisceau électronique ou ionique destinés aux traitements localisés d'objets pour modifier les propriétés des objets ou pour leur appliquer des revêtements en couche mince, p. ex. implantation d'ions
The invention relates to a method for determining intensity distribution in the focal plane (6) of a projection exposure arrangement, wherein a large aperture imaging system (7, 8) is emulated and a light from a sample is represented on a local resolution detector by means of an emulation imaging system. A device for carrying out said method and emulated devices are also disclosed. Said invention makes it possible to improve a reproduction quality since the system apodisation is taken into consideration. The inventive method consists in determining the integrated amplitude distribution in an output pupil, in combining said integrated amplitude distribution with a predetermined apodisation correction and in calculating a corrected apodisation image according to the modified amplitude distribution.
The present invention relates to a device and a corresponding method for the interferrometric measurement of phase masks, particularly from lithography. In the device according to the invention for the interferrometric measurement of phase masks (4), the radiation passing through a coherence mask (1) is brought to interference by a diffraction grating (3), there being arranged in or near the pupil plane of the first imaging optic (2) a phase mask (4) which can be positioned exactly in the x-y direction by which interferograms are generated which are phase-shifted in the x-y direction by translational displacement of the coherence mask (1) or of the diffraction grating (3) and are imaged onto the spatially resolving detector (6) by means of a second imaging optic (5) and the phase and transmission functions of the phase mask are determined by an evaluation unit. Although the solution proposed is provided in particular for the interferrometric measurement of photolithographic phase masks, the solution can, of course, generally be applied to planar phase objects, such as biological structures, for example, points of establishment with respect to an interference microscope being afforded in this case.
G01J 9/02 - Mesure du déphasage des rayons lumineuxRecherche du degré de cohérenceMesure de la longueur d'onde des rayons lumineux par des méthodes interférométriques
brevets
