A light-emitting device includes a support body including a first through hole and a second through hole, a light source including a first electrode and a second electrode, a first conductive member including a first part within the first through hole and electrically connected to the first electrode, a second conductive member including a second part within the second through hole and electrically connected to the second electrode, and an insulating member overlapping the first part and the second part in a view from a side of a second surface of the support body opposite to a side on which the light source is mounted. A shortest distance from an exposed region of the first conductive member to an exposed region of the second conductive member is greater than a shortest distance from the first through hole to the second through hole.
A diode includes a substrate, a first semiconductor layer provided on the substrate and containing a first impurity at a first concentration, a second semiconductor layer provided on the first semiconductor layer and containing a second impurity at a concentration lower than the first concentration, a first electrode provided on the first semiconductor layer and surrounding at least a part of the second semiconductor layer, and a second electrode provided on the second semiconductor layer. A width of the first electrode is in a range from one to six times a propagation length Lt [m] defined by Equation (1): Lt=(ρC [Ω·m2]/RS [Ω/sq])1/2 (1)
A diode includes a substrate, a first semiconductor layer provided on the substrate and containing a first impurity at a first concentration, a second semiconductor layer provided on the first semiconductor layer and containing a second impurity at a concentration lower than the first concentration, a first electrode provided on the first semiconductor layer and surrounding at least a part of the second semiconductor layer, and a second electrode provided on the second semiconductor layer. A width of the first electrode is in a range from one to six times a propagation length Lt [m] defined by Equation (1): Lt=(ρC [Ω·m2]/RS [Ω/sq])1/2 (1)
where ρC is a contact resistivity between the first semiconductor layer and the first electrode, and RS is a sheet resistance of the first semiconductor layer.
H10D 62/85 - Corps semi-conducteurs, ou régions de ceux-ci, de dispositifs ayant des barrières de potentiel caractérisés par les matériaux étant des matériaux du groupe III-V, p. ex. GaAs
3.
LIGHT-EMITTING DEVICE AND METHOD OF MANUFACTURING THE SAME
A light-emitting device includes a light-emitting element including a semiconductor layered body having a first element surface, a second element surface opposite to the first element surface, and a plurality of element lateral surfaces between the first and second element surfaces, and a pair of electrodes; a light-transmissive member having a first surface facing the second element surface, a second surface opposite to the first surface, and a plurality of lateral surfaces between the first and second surfaces; a bonding member between the second element surface and the first surface; and a light-reflective member in contact with the element lateral surfaces of the light-emitting element, the lateral surfaces of the light-transmissive member, and a lateral surface of the bonding member, the light-reflective member being in contact with an outer peripheral region of the second element surface or an outer peripheral region of the first surface.
A light-emitting module includes: a lens having: a light incident surface that is concave upward, and a light-exiting surface; and a light source comprising a plurality of light-emitting units disposed below the lens. In a cross section passing through a center line of the light incident surface, the light incident surface includes: an inflection point at which the light incident surface changes from a concave surface to a convex surface, a first light incident surface located above the inflection point and comprising a concave surface that is concave upward, the first light incident surface being located in a central portion of the light incident surface in a top view, and a second light incident surface located below the inflection point and comprising a convex surface that is convex downward, the second light incident surface being located outward of the first light incident surface in the top view.
A submount includes a substrate, a metal layer, and an alloy layer. The alloy layer forms an alloy region provided in at least a part of an area within less than 100 μm from a first side of the substrate, and in a part of an area at a distance of 100 μm or more from the first side, and is not provided in an area within 100 μm from a line segment of a second side having a length of at least 20% or more of a total length of the second side. The alloy layer has a first end adjacent to the first side, and a second end on an opposite side. In a cross-sectional view, a thickness of the alloy layer at the first end and its vicinity is greater than a thickness at the second end and its vicinity, which is 1.5 μm or more.
A light-emitting device includes: a light source configured to emit a laser light; a first optical member configured to split the laser light into first branched laser light and second branched laser light by reflecting the first branched laser light and transmitting the second branched laser light; and a first diffusing fiber including: a first end part on which at least a portion of the first branched laser light reflected by the first optical member is incident, and a second end part on which at least a portion of the second branched laser light is incident.
A wavelength conversion module includes a base, a wavelength conversion member, a bonding member, and a protective film. The wavelength conversion member consists of a phosphor. The wavelength conversion member is formed of a polycrystalline body. The bonding member includes a metal part. The bonding member bonds the base and the wavelength conversion member. The protective film is disposed on the wavelength conversion member.
G02B 1/14 - Revêtements protecteurs, p. ex. revêtements durs
C09K 11/77 - Substances luminescentes, p. ex. électroluminescentes, chimiluminescentes contenant des substances inorganiques luminescentes contenant des métaux des terres rares
An image display system includes: a light source unit including: a display device configured to display an image, and an imaging optical system configured to project a first image corresponding to the image toward the projection part, and to thereby display a second image, which is a virtual image visible to a viewer as being located beyond the projection part; and a drive unit configured to modify a position of the first image by controlling a position and/or an orientation of the light source unit based on a condition signal.
B60K 35/233 - Dispositifs d'affichage "tête haute" [HUD] commandant la taille ou la position d’images virtuelles dans les zones d'affichage en fonction de l’état du véhicule ou du conducteur
B60K 35/235 - Dispositifs d'affichage "tête haute" [HUD] comportant des moyens de détection de la direction du regard ou de points de repère oculaires du conducteur
B60K 35/65 - Instruments spécialement adaptés à des types de véhicules ou d’utilisateurs spécifiques, p. ex. pour la conduite à gauche ou à droite
B60K 35/81 - Dispositions pour la commande des instruments pour la commande des affichages
9.
LIGHT-EMITTING DEVICE, INTEGRATED LIGHT-EMITTING DEVICE, AND LIGHT-EMITTING MODULE
A integrated light-emitting device includes: a base including a conductive wiring; a plurality of light-emitting devices mounted on the base and configured to emit a first light, each of the light-emitting devices comprising a light-emitting element and a encapsulant covering the light-emitting element; a light reflective film provided on an upper surface of the light-emitting element; and a plurality of light reflective members disposed between adjacent ones of the light-emitting devices. A ratio (H/W) of a height (H) of the encapsulant to a width (W) of a bottom surface of the encapsulant is less than 0.5. Each of the light-emitting devices has a batwing light distribution characteristics.
F21V 9/08 - Éléments modifiant les caractéristiques spectrales, la polarisation ou l’intensité de la lumière émise, p. ex. filtres pour produire une lumière colorée, p. ex. monochromatiqueÉléments modifiant les caractéristiques spectrales, la polarisation ou l’intensité de la lumière émise, p. ex. filtres pour réduire l’intensité de la lumière
F21V 23/00 - Agencement des éléments du circuit électrique dans ou sur les dispositifs d’éclairage
A fluid sterilizing apparatus includes a first optoelectronic element, a first optoelectronic element for emitted light, and a first optoelectronic element for reflected light; an optoelectronic element for transmitted light disposed to face the first optoelectronic element, the first optoelectronic element for emitted light, and the first optoelectronic element for reflected light; a chamber including an inner space that allows passage of a fluid to be irradiated with ultraviolet light emitted from the first optoelectronic element; a first light-transmitting member; and a control unit including a processor configured to control emission of the ultraviolet light from the first optoelectronic element upon receiving a first reflected light reception signal, a first emitted light reception signal, and a first transmitted light reception signal.
A61L 2/10 - Procédés ou appareils de désinfection ou de stérilisation de matériaux ou d'objets autres que les denrées alimentaires ou les lentilles de contactAccessoires à cet effet utilisant des phénomènes physiques des radiations des ultraviolets
A61L 2/24 - Appareils utilisant des opérations programmées ou automatiques
A light-emitting device includes: first and second electroconductive members spaced apart; a light-emitting element having a rectangular shape in top view and including a semiconductor layered body, a first electrode, and a second electrode; a first bonding member bonding the first electroconductive member and the first electrode; and a second bonding member bonding the second electroconductive member and the second electrode. The upper surface of the first electroconductive member includes a first flat portion and a first recessed portion in a vicinity of the first electrode and depressed from the first flat portion. The first recessed portion includes a first portion including a portion overlapping an outer periphery of the first electrode, and a second portion not overlapping the outer periphery. A portion of the first bonding member is in a first exposed region between the second portion and the first corner portion and exposed from the light-emitting element.
A fluoride phosphor includes fluoride particles and a phosphate disposed on at least a part of a surface of the fluoride particles. The phosphate contains at least zinc in its composition. The fluoride particles have a composition containing an alkali metal, Mn, F, and an element M that includes at least one element selected from the group consisting of Group 4 elements, Group 13 elements, and Group 14 elements, and wherein in the composition of the fluoride particles, when the number of moles of the alkali metal is 2, the number of moles of Mn is greater than 0 and less than 0.2, the number of moles of the element M is greater than 0.8 and less than 1, and the number of moles of F is greater than 5 and less than 7.
C09K 11/72 - Substances luminescentes, p. ex. électroluminescentes, chimiluminescentes contenant des substances inorganiques luminescentes contenant du phosphore contenant aussi des halogènes, p. ex. des halophosphates
H10H 20/851 - Moyens de conversion de la longueur d’onde
A fluoride phosphor containing: manganese; fluorine; an element M including at least one selected from the group consisting of Group 4 elements, Group 13 elements, and Group 14 elements; and at least one selected from the group consisting of an alkali metal and an ammonium ion. When the total number of moles of the alkali metal and the ammonium ion is 2, the number of moles of the manganese is greater than 0 and less than 0.2, the total number of moles of the element M is greater than 0.8 and less than 1, and the number of moles of the fluorine is greater than 5 and less than 7. The fluoride phosphor has a particle diameter ratio (Da/Dm) that is 0.85 or greater, where Da is a mean particle diameter measured by a FSSS method, and Dm is a volume median diameter measured by a laser diffraction particle size distribution measurement method.
C09K 11/61 - Substances luminescentes, p. ex. électroluminescentes, chimiluminescentes contenant des substances inorganiques luminescentes contenant du fluor, du chlore, du brome, de l'iode ou des halogènes non spécifiés
C01B 33/10 - Composés contenant du silicium, du fluor et d'autres éléments
H10H 20/851 - Moyens de conversion de la longueur d’onde
A semiconductor light emitting element includes a GaN substrate; a first nitride semiconductor portion containing an n-type impurity and located on the substrate; a second nitride semiconductor portion containing an n-type impurity and located on the first nitride semiconductor portion; and a third nitride semiconductor portion containing an n-type impurity and located on the second nitride semiconductor portion. An n-type impurity concentration of the first nitride semiconductor portion is higher than that of the third nitride semiconductor portion, and an n-type impurity concentration of the second nitride semiconductor portion is higher than that of the third nitride semiconductor portion. An Al composition ratio of the second nitride semiconductor portion is higher than that of the first nitride semiconductor portion, and an Al composition ratio of the third nitride semiconductor portion is higher than that of the first nitride semiconductor portion.
H01S 5/343 - Structure ou forme de la région activeMatériaux pour la région active comprenant des structures à puits quantiques ou à superréseaux, p. ex. lasers à puits quantique unique [SQW], lasers à plusieurs puits quantiques [MQW] ou lasers à hétérostructure de confinement séparée ayant un indice progressif [GRINSCH] dans des composés AIIIBV, p. ex. laser AlGaAs
15.
LIGHT-RECEIVING ELEMENT, OPTICAL CIRCUIT, AND METHOD FOR MANUFACTURING LIGHT-RECEIVING ELEMENT
A light-receiving element according to an embodiment of the present invention includes: a nitride semiconductor layer; and a chalcogenide layer that is disposed above the nitride semiconductor layer, includes a transition metal, and is epitaxially grown on the nitride semiconductor layer.
H10F 30/222 - Dispositifs individuels à semi-conducteurs sensibles au rayonnement dans lesquels le rayonnement commande le flux de courant à travers les dispositifs, p. ex. photodétecteurs les dispositifs ayant des barrières de potentiel, p. ex. phototransistors les dispositifs étant sensibles au rayonnement infrarouge, visible ou ultraviolet les dispositifs ayant une seule barrière de potentiel, p. ex. photodiodes la barrière de potentiel étant une hétérojonction PN
G02B 6/12 - Guides de lumièreDétails de structure de dispositions comprenant des guides de lumière et d'autres éléments optiques, p. ex. des moyens de couplage du type guide d'ondes optiques du genre à circuit intégré
H10F 30/223 - Dispositifs individuels à semi-conducteurs sensibles au rayonnement dans lesquels le rayonnement commande le flux de courant à travers les dispositifs, p. ex. photodétecteurs les dispositifs ayant des barrières de potentiel, p. ex. phototransistors les dispositifs étant sensibles au rayonnement infrarouge, visible ou ultraviolet les dispositifs ayant une seule barrière de potentiel, p. ex. photodiodes la barrière de potentiel étant du type PIN
H10F 71/00 - Fabrication ou traitement des dispositifs couverts par la présente sous-classe
A light-emitting device includes a plurality of semiconductor laser elements including a plurality of first color-light-emitting laser elements that emit red light, and a plurality of second color-light-emitting laser elements that emit green light. The first color-light-emitting laser elements include R types of semiconductor laser elements (where R is a natural number and R ≥ 3) from a first type to an R-th type semiconductor laser elements, with a type with a larger ordinal number having a shorter emission peak wavelength. The second color-light-emitting laser elements include V types of semiconductor laser elements (where V is a natural number and 2 ≤ V ≤ (R-1)) from a first type to a V-th type semiconductor laser elements, with a type with a larger ordinal number having a shorter emission peak wavelength.
H01S 5/40 - Agencement de plusieurs lasers à semi-conducteurs, non prévu dans les groupes
H01S 5/323 - Structure ou forme de la région activeMatériaux pour la région active comprenant des jonctions PN, p. ex. hétérostructures ou doubles hétérostructures dans des composés AIIIBV, p. ex. laser AlGaAs
H01S 5/02253 - Découplage de lumière utilisant des lentilles
This display device for a vehicle comprises: a first laser diode; a scanning device that reflects and scans a first laser beam emitted from the first laser diode; and a diffusion member having a drawing surface on which the first laser beam emitted from the scanning device is incident. An image drawn on the drawing surface of the diffusion member is observed by an observer.
B60Q 1/34 - Agencement des dispositifs de signalisation optique ou d'éclairage, leur montage, leur support ou les circuits à cet effet les dispositifs ayant principalement pour objet d'indiquer le contour du véhicule ou de certaines de ses parties, ou pour engendrer des signaux au bénéfice d'autres véhicules pour indiquer un changement de direction
B60Q 1/26 - Agencement des dispositifs de signalisation optique ou d'éclairage, leur montage, leur support ou les circuits à cet effet les dispositifs ayant principalement pour objet d'indiquer le contour du véhicule ou de certaines de ses parties, ou pour engendrer des signaux au bénéfice d'autres véhicules
F21S 43/13 - Dispositifs de signalisation spécialement adaptés à l’extérieur des véhicules, p. ex. feux de freinage, feux clignotants indicateurs de direction ou feux de recul caractérisés par la source lumineuse caractérisés par le type de source lumineuse
F21S 43/20 - Dispositifs de signalisation spécialement adaptés à l’extérieur des véhicules, p. ex. feux de freinage, feux clignotants indicateurs de direction ou feux de recul caractérisés par des réfracteurs, des glaces de fermeture transparentes, des guides ou des filtres de lumière
F21S 43/30 - Dispositifs de signalisation spécialement adaptés à l’extérieur des véhicules, p. ex. feux de freinage, feux clignotants indicateurs de direction ou feux de recul caractérisés par des réflecteurs
F21W 103/00 - Dispositifs d’éclairage à l’extérieur des véhicules à des fins de signalisation
The present invention improves reliability when soldering a light-emitting element onto a conductive member. This light-emitting device 100 comprises: a conductive member 20 that includes a first conductive member 21 and a second conductive member 22; a light-emitting element 10 comprising a semiconductor laminate 11 and an electrode 12 that includes a first electrode 12a and a second electrode 12b that are disposed on a lower surface of the semiconductor laminate 11; and a bonding member 30 that includes a first bonding member 31 that is disposed between the first conductive member 21 and the first electrode 12a and includes a plurality of first solders 33 that are spaced away from each other, and a second bonding member 32 that is disposed between the second conductive member 22 and the second electrode 12b and includes a plurality of second solders 34 that are spaced away from each other.
This light-emitting device comprises: a semiconductor laser element having a first electrode and an upper surface on which the first electrode is provided and having a length of 1000 μm or more in a resonator longitudinal direction; a sub-mount to which the semiconductor laser element is joined; an intervening member having a first conductive layer electrically connected to the first electrode of the semiconductor laser element and having an upper surface on which the first conductive layer is provided; and a plurality of conductive members joined to the upper surface of the intervening member and electrically connected to the first conductive layer. The plurality of conductive members are configured by five or more conductive members, and the center-to-center spacing between a plurality of joining positions, which are positions at which the plurality of conductive members are joined to the intervening member, is equal to or less than 800 μm.
A light emitting device includes: light emitting elements each having first and second electrodes, and emitting light in a first direction; a base having first to third element side wiring parts, and first to third power supply side wiring parts, electrically connected to these element side wiring parts, on which the light emitting elements are lined up in a second direction; and first and second wires electrically connected to the light emitting elements on the first electrode side, and a third wire electrically connected to the light emitting elements on the second electrode side. The first and second element side wiring parts are positioned apart from the light emitting elements in the positive second direction, the third element side wiring part is positioned apart from the light emitting elements in the negative second direction. The first to third wires are bonded to the first to third element side wiring parts.
A light-emitting device includes: a light source configured to emit laser light; a lens configured to collimate the laser light; and a light-reflecting part having a plurality of reflecting surfaces disposed at intervals in a traveling direction of collimated light transmitted through the lens, the plurality of reflecting surfaces being configured to reflect the collimated light in an intersecting direction to the traveling direction, such that a beam diameter of reflected light reflected off the plurality of reflecting surfaces is greater than a beam diameter of the collimated light.
A light-emitting element includes: a first semiconductor portion including a first n-side semiconductor layer, a first active layer disposed on the first n-side semiconductor layer and configured to emit ultraviolet light, and a first p-side semiconductor layer disposed on the first active layer; and a second semiconductor portion including a second n-side semiconductor layer disposed on the first semiconductor portion, a second active layer disposed on the second n-side semiconductor layer and configured to emit ultraviolet light, and a second p-side semiconductor layer disposed on the second active layer. The first p-side semiconductor layer includes a first layer containing Al and a second layer disposed on the first layer and containing Al and a p-type impurity. The second p-side semiconductor layer includes a third layer containing Al and a fourth layer disposed on the third layer and containing Al and a p-type impurity.
H10H 20/825 - Matériaux des régions électroluminescentes comprenant uniquement des matériaux du groupe III-V, p. ex. GaP contenant de l’azote, p. ex. GaN
H10H 20/811 - Corps ayant des structures ou des superréseaux à effet quantique, p. ex. jonctions tunnel
A light-emitting device includes: a support body including: a substrate, and a plurality of conductive members supported by the substrate, the plurality of conductive members including a first conductive part, wherein: the support body has a first recess in an upper surface of the support body; a first light-emitting element disposed on the support body; an integrated circuit extending in a first direction and a second direction orthogonal to the first direction in a top view, the integrated circuit disposed on the support body such that the integrated circuit and the first light-emitting element are in a row in the first direction; a joining member disposed between the support body and the integrated circuit and joining the support body and the integrated circuit; and a first wire connected to the first conductive part and to the integrated circuit.
H10H 29/24 - Ensembles de plusieurs dispositifs comprenant au moins un composant émetteur de lumière à semi-conducteurs couvert par le groupe comprenant plusieurs dispositifs émetteurs de lumière à semi-conducteurs
A cap has a recess configured to accommodate a laser diode and includes: a front wall that defines a front side of the recess, at least a portion of the front wall being formed of a material that transmits laser light to be emitted from the laser diode; a rear wall that defines a rear side of the recess, the rear wall being opposed to the front wall; a main body that that defines an upper side and lateral sides of the recess defining a cavity and is connected to the front wall and the rear wall; and an antireflection coating provided on a surface of the front wall. Lower end surfaces, respectively, of the front wall, the rear wall, and the main body define a bonding surface of the cap.
H01S 5/02257 - Découplage de lumière utilisant des fenêtres optiques, p. ex. spécialement adaptées pour réfléchir de la lumière sur un détecteur à l’intérieur du boîtier
A light-emitting device having a base member including a first surface, a second surface located at a side opposite to the first surface, a third surface connecting the first and second surfaces, and a recess opening to the second and third surfaces. A length of the first surface in a first direction is longer than a length thereof in a second direction orthogonal to the first direction. The light-emitting device further includes first, second, third and fourth wiring parts on the first surface, a first light-emitting element on the first wiring part and the third wiring part, and a second light-emitting element on the second wiring part and the fourth wiring part. A light emission peak wavelength of the second light-emitting element is different from a light emission peak wavelength of the first light-emitting element. The first and second light-emitting elements are arranged along the second direction.
A method of manufacturing a light-emitting device includes heating, to a first temperature, semiconductor light-emitting elements including electrodes each including a portion formed of a first metal and a substrate including connection terminals each including a portion formed of the first metal; press-bonding the portion of the electrode to the portion of the connection terminal with a first pressure to form an intermediate body; and applying a second pressure between the substrate and the semiconductor light-emitting elements to bring the intermediate body to a second temperature and cooling the intermediate body. The electrode or the connection terminal further includes a metal multilayer film including portions formed of second and third metals. The first temperature is lower than a solidus temperature of the second metal, and the second temperature is the solidus temperature of the second metal or greater and a liquidus temperature of the second metal or less.
The present invention provides a highly reliable light-emitting device by reducing occurrence of cracks in a light-reflecting member. The light-emitting device includes a light-emitting element and a light-reflecting member that reflects light emitted from the light-emitting element. The light-reflecting member contains a resin and silicon oxide. A solid-state 29Si NMR spectrum of the light-reflecting member has a first peak at a chemical shift value of about -97 ppm.
A light-emitting element includes: a semiconductor structure including: an n-side semiconductor layer, an active layer disposed on the n-side semiconductor layer, and a p-side semiconductor layer disposed on the active layer, wherein: a first opening extends through the active layer and the p-side semiconductor, and the n-side semiconductor layer is exposed from the active layer and the p-side semiconductor layer by the first opening; a first insulating film disposed on the semiconductor structure, wherein a second opening extends through the first insulating film at a position overlapping the first opening in a plan view; and n-side wiring including: a first metal layer contacting the n-side semiconductor layer via the second opening, a second metal layer disposed on the first metal layer, and a third metal layer disposed on the second metal layer.
H10H 20/857 - Interconnexions, p. ex. grilles de connexion, fils de connexion ou billes de soudure
H10H 20/821 - Corps caractérisés par leur forme particulière, p. ex. substrats incurvés ou tronqués des régions électroluminescentes, p. ex. jonctions du type non planaire
H10H 20/84 - Revêtements, p. ex. couches de passivation ou revêtements antireflets
29.
PHOSPHOROUS-COATED RARE EARTH MAGNETIC POWDER, MAGNET, BONDED MAGNET, AND BONDED MAGNET COMPOSITION
The present disclosure relates to: a phosphorus-coated rare earth magnetic powder comprising a rare earth magnetic powder and a phosphorus-containing coating part that contains phosphorus, the phosphorus-containing coating part covering at least a portion of the surface of the rare earth magnetic powder and having a specific resistivity of 1 Ω•cm or greater as measured under a pressure of 64 MPa; a magnet containing the phosphorus-coated rare earth magnetic powder; a bonded magnet; and a bonded magnet composition.
H01F 1/08 - Aimants ou corps magnétiques, caractérisés par les matériaux magnétiques appropriésEmploi de matériaux spécifiés pour leurs propriétés magnétiques en matériaux inorganiques caractérisés par leur coercivité en matériaux magnétiques durs métaux ou alliages sous forme de particules, p. ex. de poudre comprimées, frittées ou agglomérées
B22F 1/00 - Poudres métalliquesTraitement des poudres métalliques, p. ex. en vue de faciliter leur mise en œuvre ou d'améliorer leurs propriétés
B22F 1/16 - Particules métalliques revêtues d'un non-métal
B22F 3/00 - Fabrication de pièces ou d'objets à partir de poudres métalliques, caractérisée par le mode de compactage ou de frittageAppareils spécialement adaptés à cet effet
C22C 38/00 - Alliages ferreux, p. ex. aciers alliés
H01F 1/055 - Alliages caractérisés par leur composition contenant des métaux des terres rares et des métaux de transition magnétiques, p. ex. SmCo5
A light-emitting device includes: a first substrate having a first upper surface; light-emitting elements; a second substrate; a wire; a first dam structure surrounding the light-emitting elements; and an insulating member disposed outward of the first dam structure in a top view and having an inner end portion. In a cross section, when a distance between a straight line passing through the inner end portion and perpendicular to the first upper surface and a straight line passing through an outer end portion of an outermost light-emitting element and perpendicular to the first upper surface is defined as a first distance A, and a distance, in a height direction, between a top portion of the insulating member and a plane of the first upper surface is defined as a second distance B, the first distance A and the second distance B satisfy 0.1×B≤A≤B.
H10H 29/24 - Ensembles de plusieurs dispositifs comprenant au moins un composant émetteur de lumière à semi-conducteurs couvert par le groupe comprenant plusieurs dispositifs émetteurs de lumière à semi-conducteurs
H10H 29/851 - Moyens de conversion de la longueur d’onde
H10H 29/853 - Encapsulations caractérisées par leur forme
31.
BONDED MAGNET, ON-VEHICLE MAIN MOTOR AND OIL PUMP COMPRISING BONDED MAGNET, CURABLE COMPOSITION FOR BONDED MAGNET, AND METHOD FOR PRODUCING BONDED MAGNET
A bonded magnet for use in applications in which the bonded magnet is immersed in or in contact with an oil, the bonded magnet including a cured product of a curable composition comprising: a magnetic powder; at least one epoxy resin that is at least one of a phenol novolac-type epoxy resin, a cresol novolac-type epoxy resin, or a triphenylmethane-type epoxy resin; and at least one phenolic resin-based curing agent that is at least one of a novolac-type phenolic resin, a cresol novolac-type phenolic resin, or a triphenylmethane-type phenolic resin.
H01F 41/02 - Appareils ou procédés spécialement adaptés à la fabrication ou à l'assemblage des aimants, des inductances ou des transformateursAppareils ou procédés spécialement adaptés à la fabrication des matériaux caractérisés par leurs propriétés magnétiques pour la fabrication de noyaux, bobines ou aimants
32.
LIGHT IRRADIATION DEVICE AND LIGHT IRRADIATION SYSTEM
This light irradiation device 2 is an elongated medical device, and comprises a rotation transmission member 20, a laser light source 11, and conducting wires 14A, 14B. The rotation transmission member 20 has an elongated shape and is hollow. The rotation transmission member 20 transmits rotation between the proximal side and the distal side. The laser light source 11 is connected to the rotation transmission member 20 at the distal end of an elongated device body 210. The laser light source 11 emits laser light from the distal end of the device body 210. The conducting wires 14A, 14B extend from the proximal side to the distal side along the rotation transmission member 20 and are electrically connected to the laser light source 11. The conducting wires 14A, 14B are disposed outside the hollow rotation transmission member 20.
A61N 5/067 - Thérapie par radiations utilisant un rayonnement lumineux utilisant un rayonnement laser
A61B 18/20 - Instruments, dispositifs ou procédés chirurgicaux pour transférer des formes non mécaniques d'énergie vers le corps ou à partir de celui-ci par application de radiations électromagnétiques, p. ex. de micro-ondes en utilisant des lasers
33.
LIGHT-EMITTING MODULE, METHOD OF MANUFACTURING WIRING SUBSTRATE, AND METHOD OF MANUFACTURING LIGHT-EMITTING MODULE
A light-emitting module includes one or more light-emitting devices, and a wiring substrate. Each of the light-emitting devices includes light-emitting elements, and a package including a lower surface having a wiring region. The wiring substrate includes a metal portion, an electrode portion, and an insulating portion, and defines one or more first through holes. The mounting surface of the wiring substrate includes a first region where the metal portion defines an uppermost surface, a second region where the electrode portion defines an uppermost surface, and a third region where the insulating portion defines an uppermost surface. The first region and the second region are separated from each other by the third region. A boundary of each of the first through holes is defined in the first region. The wiring region of each of the light-emitting devices is bonded to the electrode portion of the wiring substrate.
H05K 1/11 - Éléments imprimés pour réaliser des connexions électriques avec ou entre des circuits imprimés
H05K 3/10 - Appareils ou procédés pour la fabrication de circuits imprimés dans lesquels le matériau conducteur est appliqué au support isolant de manière à former le parcours conducteur recherché
34.
LASER WELDING METHOD, LASER WELDING SYSTEM, AND METAL JOINT
Provided is a laser welding method of welding a metal material and a plurality of metal foils together by irradiation with laser light, the laser welding method including: a first step of compressing, in a layering direction, the plurality of metal foils that have been layered; and a second step of joining the metal material and the plurality of metal foils together by irradiating the plurality of metal foils or the metal material with laser light and forming a welded portion that penetrates the plurality of metal foils in the layering direction and is present within the metal material.
A method of manufacturing a metal structure for an optical semiconductor device, including a treatment step (1) of immersing in and/or applying the solution containing a polyallylamine polymer a base body, the base body including an outermost layer at a portion or entire surfaces of the base body, the outermost layer including a plating of at least one selected from the group consisting of gold, silver, a gold alloy, and a silver alloy, so as to manufacture the metal structure for an optical semiconductor device having an increased adhesion to a resin material.
A wavelength beam combining device includes: a plurality of laser light sources configured to emit a plurality of laser beams in a first direction and having mutually different peak wavelengths and central axes arranged in a second direction intersecting the first direction; a first diffraction grating disposed at a position where the plurality of laser beams are received, the first diffraction grating being configured to diffract the plurality of laser beams in different directions according to wavelengths of the laser beams to cause the diffracted laser beams to enter the second diffraction grating; a second diffraction grating configured to diffract the plurality of laser beams diffracted by the first diffraction grating to form a wavelength-combined beam, and to direct the wavelength-combined beam in the first direction; and an optical coupling unit configured to couple the wavelength-combined beam to an optical transmission fiber and to be movable in the second direction.
A light-emitting device includes first and second conductive members, first and second bonding members, and a light-emitting element thereon and extending over the conductive members. The light-emitting element includes a light-emitting portion, first and second electrodes on a lower surface thereof, and a light-reflective covering member covering the conductive members, the bonding members, and the light-emitting element with lower surfaces of the conductive members exposed. The first electrode includes a first portion contacting the light-emitting portion and the first bonding member, and a second portion closer to the second electrode than the first portion and contacting the light-emitting portion. The second portion has a lower surface above that of the first portion. In cross-section, a thickness of the second portion is greater than the light-emitting portion, and a first distance between the second portion and the second electrode is shorter than a second distance between the conductive members.
A light source device includes: first to third semiconductor laser elements configured to respectively emit first to third laser beams of first to third colors different from one another; a lens configured to collimate the first to third laser beams; a housing having an opening through which the first to third laser beams transmitted through the lens pass and containing the first to third semiconductor laser elements and the lens; and a light-transmissive member covering the opening, having a second light incident surface and a second light exit surface, and allowing the first to third laser beams to pass therethrough. The light-transmissive member has first and second diffraction gratings on the second light incident surface to deflect the third and second laser beams so that their optical axes come closer to an optical axis of the first laser beam than before passing through the second light incident surface.
G02B 1/00 - Éléments optiques caractérisés par la substance dont ils sont faitsRevêtements optiques pour éléments optiques
G02B 3/04 - Lentilles simples ou composées à surfaces non sphériques à surfaces continues engendrées par une rotation autour d'un axe, mais s'écartant d'une véritable sphère
G02B 27/00 - Systèmes ou appareils optiques non prévus dans aucun des groupes ,
G02B 27/10 - Systèmes divisant ou combinant des faisceaux
H01S 5/02253 - Découplage de lumière utilisant des lentilles
H01S 5/02255 - Découplage de lumière utilisant des éléments de déviation de faisceaux lumineux
39.
METHOD FOR MANUFACTURING RESIN MOLDED BODY AND MOLD DEVICE
A method for manufacturing a resin molded body, comprising: a step of preparing a mold device including a first mold provided with an injection hole, a second mold forming, between the first mold and the second mold, a cavity communicating with the injection hole, a first release film disposed so as to close the injection hole, and a second release film disposed between the first release film and the second mold; a step of injecting a molding material containing a resin through the injection hole, breaking the first release film by means of the molding material, and injecting the molding material between the first release film and the second release film; and a step of curing the molding material.
B29C 45/17 - Éléments constitutifs, détails ou accessoiresOpérations auxiliaires
H01F 41/02 - Appareils ou procédés spécialement adaptés à la fabrication ou à l'assemblage des aimants, des inductances ou des transformateursAppareils ou procédés spécialement adaptés à la fabrication des matériaux caractérisés par leurs propriétés magnétiques pour la fabrication de noyaux, bobines ou aimants
40.
LIGHT-EMITTING DEVICE, HEADLIGHT, AND VEHICLE EQUIPPED WITH SAME
A light emitting device comprises: a light emitting element having a light emission peak wavelength in a range of 400 nm or more and 490 nm or less; and a wavelength conversion member including a first fluorescent material having a light emission peak wavelength in a range of 480 nm or more and less than 580 nm and a second fluorescent material having a light emission peak wavelength in a range of 580 nm or more and 680 nm or less and having a composition different from that of the first fluorescent material. The light emitting device emits light having a first luminance ratio Ls/L of 0.9 or less, the first luminance ratio Ls/L being a ratio of a first effective radiance Ls of the light emitted by the light emitting device in consideration of a spectral luminous efficiency curve for photopic vision of humans specified by CIE and the S-cone spectral sensitivity of humans, to a luminance L of the light emitted by the light emitting device in consideration of the spectral luminous efficiency curve for photopic vision of humans. The first fluorescent material comprises a rare earth aluminate fluorescent material having a composition represented by formula (1A).
F21S 41/176 - Sources lumineuses où la lumière est générée par un matériau photoluminescent espacé par rapport à un élément générateur de lumière primaire
F21S 41/143 - Diodes électroluminescentes [LED] la direction principale d’émission des LED étant parallèle à l’axe optique du dispositif d’éclairage
A lens includes: a first light-transmissive portion including a light incident surface and a light exiting surface located at a side opposite to the light incident surface. The first light-transmissive portion has a through hole extending from the light incident surface to the light exiting surface. At least one of the light incident surface or the light exiting surface includes: an annular convex surface or an annular concave surface, and at least one annular protrusion surrounding the through hole in a top view.
G02B 3/08 - Lentilles simples ou composées à surfaces non sphériques à surfaces discontinues, p. ex. lentille de Fresnel
H10H 29/24 - Ensembles de plusieurs dispositifs comprenant au moins un composant émetteur de lumière à semi-conducteurs couvert par le groupe comprenant plusieurs dispositifs émetteurs de lumière à semi-conducteurs
H10H 29/855 - Moyens de mise en forme du champ optique, p. ex. lentilles
42.
METHOD FOR PRODUCING NICKEL COBALT COMPOSITE OXIDE, NICKEL COBALT COMPOSITE OXIDE, POSITIVE ELECTRODE ACTIVE MATERIAL, POSITIVE ELECTRODE FOR ALL-SOLID-STATE LITHIUM ION SECONDARY BATTERY
Provided is a positive electrode for an all-solid-state lithium ion secondary battery which can reduce the internal resistance of the all-solid-state lithium ion secondary battery. The positive electrode includes an active material layer containing a positive electrode active material and a solid electrolyte material. The positive electrode active material contains secondary particles comprising an aggregate of a plurality of primary particles containing a lithium transition metal composite oxide. A smoothness of the secondary particles is more than 0.73, and a degree of circularity of the secondary particles is more than 0.83.
C01G 53/50 - Oxydes complexes contenant du nickel et au moins un autre élément métallique contenant des métaux alcalins, p. ex. LiNiO2 contenant du manganèse du type (MnO2)n-, p. ex. Li(NixMn1-x)O2 ou Li(MyNixMn1-x-y)O2
H01M 10/0525 - Batteries du type "rocking chair" ou "fauteuil à bascule", p. ex. batteries à insertion ou intercalation de lithium dans les deux électrodesBatteries à l'ion lithium
43.
POSITIVE ELECTRODE ACTIVE MATERIAL AND POSITIVE ELECTRODE FOR NONAQUEOUS ELECTROLYTE SECONDARY BATTERY
Provided is a positive electrode active material which inhibits a decrease in discharge capacity while improving output in a low SOC region. The positive electrode active material includes: first particles that each consist of a first lithium transition metal composite oxide, the first lithium transition metal composite oxide having a layered structure and having a ratio of a number of moles of nickel to a total number of moles of metals other than lithium in a composition thereof being 0.7 or greater and smaller than 1; second particles that have a volume average particle diameter smaller than a volume average particle diameter of the first particles, the second particles each consisting of a second lithium transition metal composite oxide having a layered structure; and third particles that each consist of a third lithium transition metal composite oxide, the third lithium transition metal composite oxide having a layered structure, having a ratio of number of moles of nickel to total number of moles of metals other than lithium in a composition thereof being 0.4 to 0.6, and having a ratio of a number of moles of cobalt to the total number of moles being 0.35 to 0.55. The first particle content is 60 mass % or higher and lower than 100 mass %, and the third particle content is 10 mass % or lower, to a total content of the first particles, the second particles, and the third particles.
H01M 4/36 - Emploi de substances spécifiées comme matériaux actifs, masses actives, liquides actifs
H01M 4/02 - Électrodes composées d'un ou comprenant un matériau actif
H01M 4/485 - Emploi de substances spécifiées comme matériaux actifs, masses actives, liquides actifs d'oxydes ou d'hydroxydes inorganiques d'oxydes ou d'hydroxydes mixtes pour insérer ou intercaler des métaux légers, p. ex. LiTi2O4 ou LiTi2OxFy
H01M 4/505 - Emploi de substances spécifiées comme matériaux actifs, masses actives, liquides actifs d'oxydes ou d'hydroxydes inorganiques de manganèse d'oxydes ou d'hydroxydes mixtes contenant du manganèse pour insérer ou intercaler des métaux légers, p. ex. LiMn2O4 ou LiMn2OxFy
H01M 4/525 - Emploi de substances spécifiées comme matériaux actifs, masses actives, liquides actifs d'oxydes ou d'hydroxydes inorganiques de nickel, de cobalt ou de fer d'oxydes ou d'hydroxydes mixtes contenant du fer, du cobalt ou du nickel pour insérer ou intercaler des métaux légers, p. ex. LiNiO2, LiCoO2 ou LiCoOxFy
H01M 10/0525 - Batteries du type "rocking chair" ou "fauteuil à bascule", p. ex. batteries à insertion ou intercalation de lithium dans les deux électrodesBatteries à l'ion lithium
44.
LIGHT SOURCE MODULE AND ULTRAVIOLET LIGHT FLUID PROCESSING DEVICE
A light source module includes a substrate, light sources positioned on an upper surface of the substrate, and an optical member including light control parts and positioned above the substrate such that the light sources are arranged between the substrate and the optical member.
A61L 2/10 - Procédés ou appareils de désinfection ou de stérilisation de matériaux ou d'objets autres que les denrées alimentaires ou les lentilles de contactAccessoires à cet effet utilisant des phénomènes physiques des radiations des ultraviolets
A61L 9/20 - Désinfection, stérilisation ou désodorisation de l'air utilisant des phénomènes physiques des radiations des ultraviolets
C02F 1/32 - Traitement de l'eau, des eaux résiduaires ou des eaux d'égout par irradiation par la lumière ultraviolette
45.
METHOD FOR MANUFACTURING LIGHT-EMITTING ELEMENT AND LIGHT-EMITTING ELEMENT
This method for manufacturing a light-emitting element comprises: a preparation step; an insulating layer formation step; a metal layer formation step; and a singulation step. In the preparation step, a wafer, in which a conductive layer is disposed beneath a semiconductor layer, is prepared. In the insulating layer formation step, an insulating layer is formed beneath a part of the conductive layer. In the metal layer formation step, a metal layer is formed, which covers the lower surface of the conductive layer and the lower surface of the insulating layer, and which has a groove recessed upward at a position overlapping the insulating layer in plan view. In the singulation step, after the metal layer formation step, the wafer is singulated at the position overlapping the insulating layer in plan view. The present invention thereby provides a light-emitting element manufacturing method and a light-emitting element which are capable of improving heat dissipation.
The present invention provides a positive electrode material for a lithium sulfur battery, which achieves both good cycle characteristics and good rate characteristics. The present invention relates to a positive electrode material for a lithium sulfur battery, the positive electrode material containing a porous carbon material that has a pore diameter of 1.0 nm to 5.0 nm inclusive at the cumulative volume of 70% and a sulfur compound that is supported by the porous carbon material, wherein the ratio of the mass loss amount in the temperature range of 500°C to 1000°C to the mass loss amount in the temperature range of 30°C to 1000°C is 3% or more at a heating rate of 10°C/minute in a nitrogen atmosphere.
H01M 4/58 - Emploi de substances spécifiées comme matériaux actifs, masses actives, liquides actifs de composés inorganiques autres que les oxydes ou les hydroxydes, p. ex. sulfures, séléniures, tellurures, halogénures ou LiCoFyEmploi de substances spécifiées comme matériaux actifs, masses actives, liquides actifs de structures polyanioniques, p. ex. phosphates, silicates ou borates
H01M 4/36 - Emploi de substances spécifiées comme matériaux actifs, masses actives, liquides actifs
H01M 4/60 - Emploi de substances spécifiées comme matériaux actifs, masses actives, liquides actifs de composés organiques
47.
LIGHT SOURCE MODULE AND ULTRAVIOLET LIGHT FLUID PROCESSING DEVICE
A light source module includes a substrate, light sources positioned on an upper surface of the substrate, and an optical member including light control parts and positioned above the substrate such that the light sources are located between the substrate and the optical member.
A61L 2/10 - Procédés ou appareils de désinfection ou de stérilisation de matériaux ou d'objets autres que les denrées alimentaires ou les lentilles de contactAccessoires à cet effet utilisant des phénomènes physiques des radiations des ultraviolets
48.
PLANAR LIGHT SOURCE AND THE METHOD OF MANUFACTURING THE SAME
A planar light source includes light sources, an insulating base, a wiring layer, a light reflective member, and conducting members. The light sources each has electrodes extending on one face and a light adjusting member disposed on another face. The insulating base has a first side at which the light sources are located, and a second side on which the wiring layer is disposed. The light reflective member is located at the first side relative to the insulating base and defines first through holes at positions aligned with the electrodes, an opening of each of the first through holes not running over an outline of the light source. The conducting members are disposed in the first through holes and electrically connecting the electrodes to the wiring layer. The one face of each of the light sources has a region located between the electrodes and facing the light reflective member.
F21K 9/68 - Détails des réflecteurs faisant partie de la source lumineuse
F21Y 105/16 - Sources lumineuses planes comprenant un réseau bidimensionnel d’éléments générateurs de lumière ponctuelle caractérisées par la forme d’ensemble du réseau bidimensionnel carrée ou rectangulaire, p. ex. pour les panneaux de lumière
H01F 1/08 - Aimants ou corps magnétiques, caractérisés par les matériaux magnétiques appropriésEmploi de matériaux spécifiés pour leurs propriétés magnétiques en matériaux inorganiques caractérisés par leur coercivité en matériaux magnétiques durs métaux ou alliages sous forme de particules, p. ex. de poudre comprimées, frittées ou agglomérées
B22F 1/00 - Poudres métalliquesTraitement des poudres métalliques, p. ex. en vue de faciliter leur mise en œuvre ou d'améliorer leurs propriétés
B22F 1/05 - Poudres métalliques caractérisées par la dimension ou la surface spécifique des particules
B22F 1/16 - Particules métalliques revêtues d'un non-métal
B22F 3/00 - Fabrication de pièces ou d'objets à partir de poudres métalliques, caractérisée par le mode de compactage ou de frittageAppareils spécialement adaptés à cet effet
An image display device includes: a light-transmitting substrate including a first surface; a circuit element on the first surface; a first wiring layer located on the circuit element and electrically connected to the circuit element; a first insulating film covering the circuit element and the first wiring layer on the first surface; a first plug located on the first insulating film and electrically connected to the first wiring layer; a first light-emitting element located on the first plug, electrically connected to the first plug, and including a light-emitting surface on a surface at a side opposite to a surface on a first insulating film side; a second insulating film covering at least a portion of the first light-emitting element, the first insulating film, and the first plug; and a second wiring layer located on the second insulating film and electrically connected to the light-emitting surface of the first light-emitting element.
H01L 25/16 - Ensembles consistant en une pluralité de dispositifs à semi-conducteurs ou d'autres dispositifs à l'état solide les dispositifs étant de types couverts par plusieurs des sous-classes , , , , ou , p. ex. circuit hybrides
H01L 23/00 - Détails de dispositifs à semi-conducteurs ou d'autres dispositifs à l'état solide
H01L 25/18 - Ensembles consistant en une pluralité de dispositifs à semi-conducteurs ou d'autres dispositifs à l'état solide les dispositifs étant de types prévus dans plusieurs différents groupes principaux de la même sous-classe , , , , ou
H10H 20/82 - Surfaces rugueuses, p. ex. à l’interface entre les couches épitaxiales
H10H 20/825 - Matériaux des régions électroluminescentes comprenant uniquement des matériaux du groupe III-V, p. ex. GaP contenant de l’azote, p. ex. GaN
H10H 20/857 - Interconnexions, p. ex. grilles de connexion, fils de connexion ou billes de soudure
51.
ALPHA-FE-CONTAINING RARE EARTH-IRON-BASED MAGNETIC POWDER, PRODUCTION METHOD THEREOF, MAGNETIC MATERIAL FOR MAGNETIC FIELD AMPLIFICATION, AND MAGNETIC MATERIAL FOR HYPER-HIGH FREQUENCY ABSORPTION
The present disclosure relates to an α-Fe-containing rare earth-iron-based magnetic powder including: a core region containing a rare earth R and Fe, where R represents at least one selected from the group consisting of Y, La, Ce, Pr, Nd, Pm, Eu, Gd, Tb, Dy, Ho, Er, Tm, Yb, Lu, and Sm; an α-Fe-containing region located outside the core region and containing α-Fe and at least one selected from the group consisting of oxides, nitrides, and oxynitrides of the rare earth R; and an iron oxide-containing region located outside the α-Fe-containing region and containing magnetite or maghemite.
B22F 1/16 - Particules métalliques revêtues d'un non-métal
B22F 1/142 - Traitement thermique ou thermomécanique
B22F 1/145 - Traitement chimique, p. ex. passivation ou décarburation
H01F 1/057 - Alliages caractérisés par leur composition contenant des métaux des terres rares et des métaux de transition magnétiques, p. ex. SmCo5 et des éléments IIIa, p. ex. Nd2Fe14B
H01F 41/02 - Appareils ou procédés spécialement adaptés à la fabrication ou à l'assemblage des aimants, des inductances ou des transformateursAppareils ou procédés spécialement adaptés à la fabrication des matériaux caractérisés par leurs propriétés magnétiques pour la fabrication de noyaux, bobines ou aimants
A light-emitting element includes a substrate, a semiconductor structure body, an n-electrode, a p-electrode, an n-pad electrode, and a p-pad electrode. The semiconductor structure body includes an n-type semiconductor layer including first and second regions. The n-electrode includes first to third n-electrode regions. The p-electrode includes first to third p-electrode regions. The first region includes first to fourth parts. The first part is positioned between the first n-electrode region and the third p-electrode region. The second part is positioned between the second n-electrode region and the third p-electrode region. The third part is positioned between the first p-electrode region and the third n-electrode region. The fourth part is positioned between the second p-electrode region and the third n-electrode region. A first trench that is recessed downward is located in the first and second parts. The first trench is not located in the third part.
A semiconductor laser element includes: a semiconductor layered portion including first and second semiconductor layer portions respectively including first and second conductivity-type semiconductor layers, and an active layer between them; a ridge in the semiconductor layered portion; and a diffraction grating. One end surface of the semiconductor laser element serves as a light-emitting surface. The ridge includes, a first ridge, and a second ridge including a first protective film on the semiconductor layered portion and located at a light-emitting surface side in a top view. The diffraction grating is located between the second semiconductor layer portion and the first protective film and has a periodic structure alternately including parts of the second semiconductor layer portion and the first protective film. In a top view, an outer periphery of the first protective film excluding the light-emitting surface side and a boundary between the first and second ridges is located between outer peripheries of the second ridge and the diffraction grating.
H01S 5/22 - Structure ou forme du corps semi-conducteur pour guider l'onde optique ayant une structure à nervures ou à bandes
H01S 5/12 - Structure ou forme du résonateur optique le résonateur ayant une structure périodique, p. ex. dans des lasers à rétroaction répartie [lasers DFB]
54.
VEHICLE LIGHT SOURCE DEVICE AND VEHICLE LIGHTING FIXTURE
A vehicle light source device includes: a plurality of light sources arranged in two rows and n columns, wherein n is a natural number of 4 or greater, the plurality of light sources including: a plurality of first light sources arranged in a row direction in a first row, each of the first light sources comprising a first light emitting element and a first light transmissive member arranged on the first light emitting element, and a plurality of second light sources arranged in the row direction in a second row, each of the second light sources comprising a second light emitting element and a second light transmissive member arranged on the second light emitting element.
F21S 41/176 - Sources lumineuses où la lumière est générée par un matériau photoluminescent espacé par rapport à un élément générateur de lumière primaire
F21S 41/153 - Diodes électroluminescentes [LED] disposées sur une ou plusieurs lignes disposées dans une matrice
An oxide phosphor has a composition represented by the following formula (1).
An oxide phosphor has a composition represented by the following formula (1).
An oxide phosphor has a composition represented by the following formula (1).
wherein M1 represents one or more selected from Na, K, Rb, and Cs, M2 represents one or more selected from Mg, Ca, Sr, and Ba, M3 represents one or more selected from Al, Sc, and In, M4 represents one or more selected from Si, Ti, Zr, Sn, and Hf, M5 represents one or more selected from Ni, Ce, Eu, Fe, Mn, Nd, Tm, Ho, Er, and Yb, 0≤q≤0.5, 0≤r≤1.0 0≤s≤4.0, 0≤t≤1.0, 5≤u≤10, 0≤v≤1.0, 0.5≤w≤5.0, 10≤x≤30, and y and z satisfy 0.02≤y≤0.5, 0≤z≤0.3, and y>z.
H10H 20/851 - Moyens de conversion de la longueur d’onde
C09K 11/68 - Substances luminescentes, p. ex. électroluminescentes, chimiluminescentes contenant des substances inorganiques luminescentes contenant des métaux réfractaires contenant du chrome, du molybdène ou du tungstène
A light-emitting device includes: a base having a mounting surface; a plurality of semiconductor laser elements each configured to emit a laser beam from a light emission surface in a first direction, which are arranged on the mounting surface in a second direction; a plurality of first mirror members each having a first reflective surface configured to reflect the laser beam emitted from a corresponding one of the plurality of semiconductor laser elements to change a travel direction of the laser beam into a direction away from the mounting surface; a cover configured to transmit the laser beams reflected by the first reflective surfaces; and at least one second mirror member arranged on an upper surface of the cover, and having a second reflective surface configured to reflect the laser beams transmitted through the cover to further change the travel directions of the laser beams.
A light emitting device includes a first light emitting element, second light emitting elements, and third light emitting elements, a base including first to fourth wiring parts, and wires. The first, second, and third wiring parts is connected to one of the two electrodes of the first, second and third light emitting elements, respectively. The fourth wiring part is connected to the other of the two electrodes. A first current path is formed between the first wiring part and the fourth wiring part to be taken by the first light emitting element. A second current path is formed between the second wiring part and the fourth wiring part to be taken by the second light emitting elements. A third current path is formed between the third wiring part and the fourth wiring part to be taken by the third light emitting elements.
A method for manufacturing an optical member includes: preparing a first light-transmissive member and a first molded body made of an inorganic material and surrounding at least one or more lateral surfaces of the first light-transmissive member; firing the first molded body at a first temperature to obtain a first light-reflective member; bonding an upper surface of the first light-transmissive member to a lower surface of a second light-transmissive member; forming, on an upper surface of the first light-reflective member, a second molded body made of an inorganic material and surrounding at least one or more lateral surfaces of the second light-transmissive member; and firing the second molded body at a second temperature lower than the first temperature to obtain a second light-reflective member.
C04B 35/10 - Produits céramiques mis en forme, caractérisés par leur compositionCompositions céramiquesTraitement de poudres de composés inorganiques préalablement à la fabrication de produits céramiques à base d'oxydes à base d'oxyde d'aluminium
H10H 20/851 - Moyens de conversion de la longueur d’onde
C04B 35/115 - Produits translucides ou transparents
C04B 38/00 - Mortiers, béton, pierre artificielle ou articles de céramiques poreuxLeur préparation
A method for manufacturing a ceramic sintered body substrate includes preparing a ceramic substrate 1 provided with a through hole 2 before firing (S11), disposing a first metal paste 3 in the through hole (S12), and firing the ceramic substrate provided with the first metal paste (S14). In the disposing of the first metal paste, the first metal paste includes a plurality of particles of first metal powder (4) and a plurality of particles of active metal powder (50), and the first metal powder includes a metal powder (4a) serving as a core, and a covering metal member (40b) having a melting point lower than a melting point of the metal powder and covering at least a part of the metal powder, and in the firing of the ceramic substrate, a firing temperature is a temperature in a range from 700° C. to less than the melting point of the metal powder.
H10H 29/24 - Ensembles de plusieurs dispositifs comprenant au moins un composant émetteur de lumière à semi-conducteurs couvert par le groupe comprenant plusieurs dispositifs émetteurs de lumière à semi-conducteurs
To provide a light emitting device having a good color rendering property and a specific melanopic ratio.
To provide a light emitting device having a good color rendering property and a specific melanopic ratio.
A light emitting device includes a light emitting element, and a fluorescent member including a phosphor. The light emitting device satisfies any of Condition (A): a correlated color temperature of light emission of the light emitting device is within a range of 4500 K or more and 7500 K or less, a content of a first phosphor is within a range of 29 mass % or more and 90 mass % or less, and a melanopic ratio is within a range of 1.0 or more and 1.4 or less; Condition (B): a correlated color temperature of light emission of the light emitting device is within a range of 2500 K or more and less than 4500 K, a content of a first phosphor is within a range of 25 mass % or more and 90 mass % or less, and a melanopic ratio is within a range of 0.7 or more and 1.1 or less; and Condition (C): a correlated color temperature of light emission of the light emitting device is within a range of 2500 K or more and 3000 K or less, a content of a first phosphor is within a range of 20 mass % or more and 90 mass % or less, and a melanopic ratio is within a range of 0.48 or more and 1.10 or less.
A light emitting device includes: a semiconductor light emitting element; and a package that seals the semiconductor light emitting element. The package includes a base and a cover bonded to the base, the base having: a first upper surface region directly or indirectly supporting the semiconductor light emitting element, and a second upper surface region surrounding the first upper surface region in a plan view as viewed in a direction normal to the first upper surface region. The second upper surface region is positioned above the first upper surface region. The base of the package includes one or more base-side metal layers positioned on the second upper surface region of the base.
A light-emitting device includes a substrate, a light-emitting element, a protective element, a light-transmissive member, and an adhesive member. The light-emitting element includes a support substrate and a semiconductor structure. The support substrate has a first lateral surface. The semiconductor structure is disposed on a lower surface of the support substrate. The light-emitting element is disposed such that a surface on a lower surface side of the light-emitting element faces an upper surface of the substrate. The protective element is disposed on the substrate such that the protective element faces the first lateral surface. The adhesive member bonds an upper surface of the support substrate and a lower surface of the light-transmissive member while covering the first lateral surface. An upper end of the first lateral surface is located at a greater distance from the protective element than a lower end of the first lateral surface is.
An end-capped optical fiber includes: an optical fiber including a first portion comprising a first core and a first cladding surrounding the first core, and a second portion comprising a second core and a second cladding surrounding the second core; and an end cap comprising a first face connected to an end face of the second portion and a second face located on a side opposite the first face, wherein: a diameter of the first core is constant along an optical axis of the first core; a diameter of the second core gradually increases toward the end cap; the end cap includes a convex lens; the second surface includes a convex lens surface of the convex lens; and a focal point of the convex lens is located inside the optical fiber and away from the end face of the second portion.
G02B 6/27 - Moyens de couplage optique avec des moyens de sélection et de réglage de la polarisation
G02B 6/293 - Moyens de couplage optique ayant des bus de données, c.-à-d. plusieurs guides d'ondes interconnectés et assurant un système bidirectionnel par nature en mélangeant et divisant les signaux avec des moyens de sélection de la longueur d'onde
A method of manufacturing a light-emitting device includes: preparing a light-emitting element; preparing a light-transmissive member; disposing a first bonding member that is uncured on at least a portion of an outer peripheral region of the upper surface of the light-emitting element; disposing a second bonding member that is uncured on a portion of the upper surface of the light-emitting element that is exposed from the first bonding member, wherein a viscosity of the second bonding member that is uncured is lower than a viscosity of the first bonding member that is uncured; spreading the first bonding member and/or the second bonding member in an outer peripheral region of the lower surface of the light-transmissive member by pressing the first bonding member and the second bonding member by the lower surface of the light-transmissive member; and curing the first bonding member and the second bonding member.
H01S 5/0236 - Fixation des puces laser sur des supports en utilisant un adhésif
H01S 5/02257 - Découplage de lumière utilisant des fenêtres optiques, p. ex. spécialement adaptées pour réfléchir de la lumière sur un détecteur à l’intérieur du boîtier
A light emitting element includes: a semiconductor structure including a first semiconductor layer of a first conductivity type, an active layer disposed below the first semiconductor layer, and a second semiconductor layer of a second conductivity type disposed below the active layer; a cover part made of an insulating material and disposed on the upper surface of the first semiconductor layer; a metal layer disposed within the cover part; a light transmissive electrode disposed on the upper surface of the cover part and the upper surface of the first semiconductor layer; a first electrode including an external connection portion disposed on the upper surface of the light transmissive electrode, and an extended portion extending from the external connection portion, and a second electrode disposed on the second semiconductor layer. At least a portion of the extended portion overlaps the cover part and the metal layer in a plan view.
A light source device includes: a first combined body configured to emit light of a first color, the first combined body including: a first light emitting portion comprising a first light emitting element, and a second light emitting portion comprising a plurality of second light emitting elements arrayed around an outer periphery of the first light emitting element in a plan view; a second combined body configured to emit light of a second color different from the first color, the second combined body including: a third light emitting portion comprising a third light emitting element, and a fourth light emitting portion comprising a plurality of fourth light emitting elements arrayed around an outer periphery of the first light emitting element in a plan view; and a compound lens disposed above the first combined body and the second combined body, the compound lens comprising a first lens and a second lens.
The present invention improves the accuracy of positioning when a light-emitting element is bonded onto a conducting member using solder. This light-emitting device 100 is provided with: a pair of conducting members 20 that are disposed separated from each other; solder 30 that is disposed on an upper surface of each of the pair of conducting members 20; and a light-emitting element 10 that is provided with a semiconductor layer body 11 and a pair of electrodes 12 that are disposed on a lower surface of the semiconductor layer body 11, the upper surfaces of the pair of conducting members 20 and the pair of electrodes 12 being bonded via the solder 30. The upper surfaces of the pair of conducting members 20 each comprise a flat surface and a processed section 80 that is provided with a contour. The processed section 80 includes, in a region overlapping with the light-emitting element 10 in top view, a first processed section 81 disposed in a first region facing the pair of conducting members 20 and a second processed section 82 disposed in part of a second region located so as to overlap with or follow the outline of the light-emitting element 10.
This light-emitting device comprises: a light-emitting element that emits light having a main wavelength in the range from 400 nm to 490 nm; and a phosphor that emits light by being excited by the light emitted by the light-emitting element. In the emission spectrum of the light-emitting device, a first integrated value of emission intensities in the wavelength range from 600 nm to 780 nm is less than 22.5% of a second integrated value of emission intensities in the wavelength range from 380 nm to 780 nm, and a third integrated value of emission intensities in the wavelength range from 640 nm to 780 nm is less than 7.0% of the second integrated value.
H10H 20/851 - Moyens de conversion de la longueur d’onde
C09K 11/79 - Substances luminescentes, p. ex. électroluminescentes, chimiluminescentes contenant des substances inorganiques luminescentes contenant des métaux des terres rares contenant du silicium
C09K 11/80 - Substances luminescentes, p. ex. électroluminescentes, chimiluminescentes contenant des substances inorganiques luminescentes contenant des métaux des terres rares contenant de l'aluminium ou du gallium
F21V 9/38 - Combinaison de plusieurs éléments photoluminescents de matériaux différents
H10H 29/24 - Ensembles de plusieurs dispositifs comprenant au moins un composant émetteur de lumière à semi-conducteurs couvert par le groupe comprenant plusieurs dispositifs émetteurs de lumière à semi-conducteurs
H10H 29/851 - Moyens de conversion de la longueur d’onde
F21W 102/00 - Dispositifs d’éclairage à l’extérieur des véhicules à des fins d'éclairage
A light-emitting module includes a housing including a first opening, a substrate including a second opening, a light-emitting device, and electronic paper covering the first opening. The light-emitting device is disposed in the housing and configured to emit first light. At least a portion of second light, which is a reflective component of the first light reflected by the electronic paper, is emitted to outside of the housing through the second opening. The electronic paper is switchable between a first state in which a first color appears when the light-emitting device is turned on and a second state in which a second color appears when the light-emitting device is turned off. In the first state and the second state, the electronic paper is visually recognizable from the outside of the housing through the second opening.
G02F 1/167 - Dispositifs ou dispositions pour la commande de l'intensité, de la couleur, de la phase, de la polarisation ou de la direction de la lumière arrivant d'une source lumineuse indépendante, p. ex. commutation, ouverture de porte ou modulationOptique non linéaire pour la commande de l'intensité, de la phase, de la polarisation ou de la couleur basés sur le mouvement de translation des particules dans un fluide sous l’influence de l’application d’un champ caractérisés par l’effet électro-optique ou magnéto-optique par électrophorèse
A light emitting device includes a base member formed of a ceramic material and having a through hole, a first interconnect disposed on an upper surface of the base member, a second interconnect disposed on a lower surface of the base member, a conductive member disposed inside the through hole and electrically connecting the first interconnect and the second interconnect, a light emitting element disposed on the first interconnect and electrically connected to the first interconnect, and an integrated circuit disposed on the first interconnect and electrically connected to the first interconnect.
H10H 29/24 - Ensembles de plusieurs dispositifs comprenant au moins un composant émetteur de lumière à semi-conducteurs couvert par le groupe comprenant plusieurs dispositifs émetteurs de lumière à semi-conducteurs
A semiconductor laser element includes a first semiconductor layer being a III-V compound semiconductor layer containing at least As; a second semiconductor layer located above the first semiconductor layer and being a III-V compound semiconductor layer containing at least P; a third semiconductor layer located above the second semiconductor layer; an active layer on the second semiconductor layer; a window structure formed across the first to third semiconductor layers and the active layer; a defect layer having a defect, located in a region where the window structure is formed and between the first and second semiconductor layers, and containing a group III element of each of the first and second semiconductor layers; and an end surface emitting laser light and including the defect layer. The defect layer does not overlap with a near-field pattern of laser light at the end surface or overlaps only with a tail of the near-field pattern.
H01S 5/02257 - Découplage de lumière utilisant des fenêtres optiques, p. ex. spécialement adaptées pour réfléchir de la lumière sur un détecteur à l’intérieur du boîtier
H01S 5/343 - Structure ou forme de la région activeMatériaux pour la région active comprenant des structures à puits quantiques ou à superréseaux, p. ex. lasers à puits quantique unique [SQW], lasers à plusieurs puits quantiques [MQW] ou lasers à hétérostructure de confinement séparée ayant un indice progressif [GRINSCH] dans des composés AIIIBV, p. ex. laser AlGaAs
A light-emitting module includes a light-emitting device and a wiring board. The light-emitting device includes a substrate on which semiconductor laser elements are arranged along a longitudinal direction. The wiring board has a mounting surface including a first area on which the light-emitting device is mounted. The wiring board has a longitudinal direction extending in a first direction. The wiring board includes first and second fixing portions, a first electrode portion to which the substrate is joined, and a second electrode portion. The second electrode portion is configured to be connected to a connecting member for electrical connection to an external device. In the top view, the first area is located between the first and second fixing portions. The second fixing portion is disposed between the first and second electrode portions. The substrate has the longitudinal direction extending in the first direction.
A light-emitting device includes a base, a plurality of submounts, a plurality of semiconductor laser elements, and a plurality of protective elements. The submounts include first and second lateral surfaces, are arranged such that the first lateral surface is aligned in a first direction on an upper surface of the base, and have a length in a second direction perpendicular to the first direction in a top view greater than a length in the first direction. The semiconductor laser elements are arranged on the submounts different from each other such that the light-emitting surface is in a position closer to the first lateral surface than the second lateral surface. The protective elements are each arranged on the submounts different from each other in a position in which a distance to the second lateral surface is shorter than a distance from the semiconductor laser element to the second lateral surface.
A method for manufacturing a laminate includes: disposing a resist material layer on an intermediate body; exposing the resist material layer to light using a mask including a first portion, a second portion having a light transmittance lower than that of the first portion, and a third portion having a light transmittance lower than that of the second portion; developing the exposed resist material layer to form a resist layer including a first region disposed in a region corresponding to the first portion, a second region disposed in a region corresponding to the second portion, spaced apart from the intermediate body, and connected to the first region, and an opening formed in a region corresponding to the third portion; forming a covering layer on the resist layer and the intermediate body; and removing the resist layer to remove a portion of the covering layer in contact with the resist layer.
G03F 7/00 - Production par voie photomécanique, p. ex. photolithographique, de surfaces texturées, p. ex. surfaces impriméesMatériaux à cet effet, p. ex. comportant des photoréservesAppareillages spécialement adaptés à cet effet
A semiconductor laser element includes an n-side semiconductor layer, an active layer and a p-side semiconductor layer. The p-side semiconductor layer includes, in order from the active layer, a first p-side composition gradient layer made of undoped InxGa1-xN and having an In composition ratio x decreasing in a range of 0 to less than 1 with distance from the active layer, an intermediate layer made of undoped AlzGa1-zN, and having an Al composition ratio z in a range of more than 0, a second p-side composition gradient layer made of undoped AlyGa1-yN, and having an Al composition ratio y increasing in a range of more than z to less than 1 with distance from the active layer, one or more p-type semiconductor layers containing a p-type impurity, and an electron barrier layer having a band gap energy larger than the second p-side composition gradient layer and containing a p-type impurity.
H01S 5/20 - Structure ou forme du corps semi-conducteur pour guider l'onde optique
H01S 5/22 - Structure ou forme du corps semi-conducteur pour guider l'onde optique ayant une structure à nervures ou à bandes
H01S 5/343 - Structure ou forme de la région activeMatériaux pour la région active comprenant des structures à puits quantiques ou à superréseaux, p. ex. lasers à puits quantique unique [SQW], lasers à plusieurs puits quantiques [MQW] ou lasers à hétérostructure de confinement séparée ayant un indice progressif [GRINSCH] dans des composés AIIIBV, p. ex. laser AlGaAs
A light emitting device includes: a support defining first and second recesses partitioned by a wall, an area of a first bottom surface of the first recess is greater than a second bottom surface of the second recess; first and second light emitting elements in the first recess; a third light emitting element in the second recess; a first light transmissive member apart from the third light emitting element in the first recess, including a first wavelength conversion member having an emission peak wavelength longer than the first light emitting element, and overlapping the first and second light emitting elements; and a second light transmissive member located in the second recess and overlapping the third light emitting element.
A light emitting device includes: a support defining first and second recesses partitioned by a wall, an area of a first bottom surface of the first recess is greater than a second bottom surface of the second recess; first and second light emitting elements in the first recess; a third light emitting element in the second recess; a first light transmissive member apart from the third light emitting element in the first recess, including a first wavelength conversion member having an emission peak wavelength longer than the first light emitting element, and overlapping the first and second light emitting elements; and a second light transmissive member located in the second recess and overlapping the third light emitting element.
The first to third light emitting elements are drivable independently.
A light emitting device includes: a support defining first and second recesses partitioned by a wall, an area of a first bottom surface of the first recess is greater than a second bottom surface of the second recess; first and second light emitting elements in the first recess; a third light emitting element in the second recess; a first light transmissive member apart from the third light emitting element in the first recess, including a first wavelength conversion member having an emission peak wavelength longer than the first light emitting element, and overlapping the first and second light emitting elements; and a second light transmissive member located in the second recess and overlapping the third light emitting element.
The first to third light emitting elements are drivable independently.
The emission peak wavelength of the first light emitting element is longer than the second and third light emitting elements.
H10H 29/851 - Moyens de conversion de la longueur d’onde
H01L 25/075 - Ensembles consistant en une pluralité de dispositifs à semi-conducteurs ou d'autres dispositifs à l'état solide les dispositifs étant tous d'un type prévu dans une seule des sous-classes , , , , ou , p. ex. ensembles de diodes redresseuses les dispositifs n'ayant pas de conteneurs séparés les dispositifs étant d'un type prévu dans le groupe
H10H 29/24 - Ensembles de plusieurs dispositifs comprenant au moins un composant émetteur de lumière à semi-conducteurs couvert par le groupe comprenant plusieurs dispositifs émetteurs de lumière à semi-conducteurs
A backlight device configured to be disposed under a liquid crystal panel includes a plurality of light-emitting units, a backlight driving circuit, and a lighting stop circuit. Each of the plurality of light-emitting units includes one or more light sources. The backlight driving circuit is configured to generate a scan synchronization signal that is asynchronous to a vertical synchronization signal generated for each frame cycle of the liquid crystal display and generate a plurality of scan signals to sequentially turn on the plurality of light-emitting units in each cycle of the scan synchronization signal, in synchronization with the generated scan synchronization signal. The lighting stop circuit is configured to stop lighting of the plurality of light-emitting units periodically during one cycle or a plurality of cycles of the scan synchronization signal.
G09G 3/34 - Dispositions ou circuits de commande présentant un intérêt uniquement pour l'affichage utilisant des moyens de visualisation autres que les tubes à rayons cathodiques pour la présentation d'un ensemble de plusieurs caractères, p. ex. d'une page, en composant l'ensemble par combinaison d'éléments individuels disposés en matrice en commandant la lumière provenant d'une source indépendante
G02F 1/1335 - Association structurelle de cellules avec des dispositifs optiques, p. ex. des polariseurs ou des réflecteurs
G09G 3/36 - Dispositions ou circuits de commande présentant un intérêt uniquement pour l'affichage utilisant des moyens de visualisation autres que les tubes à rayons cathodiques pour la présentation d'un ensemble de plusieurs caractères, p. ex. d'une page, en composant l'ensemble par combinaison d'éléments individuels disposés en matrice en commandant la lumière provenant d'une source indépendante utilisant des cristaux liquides
A wavelength conversion member includes a substrate having light reflectivity, and a phosphor layer disposed on the substrate and including phosphor particles, oxide particles adhering to the phosphor particles, and a covering film containing silicon oxide and covering the phosphor particles and the oxide particles. A material of the oxide particles differs from a material of the covering film, and an extinction coefficient of the covering film is less than 1.0×10−5.
C09K 11/77 - Substances luminescentes, p. ex. électroluminescentes, chimiluminescentes contenant des substances inorganiques luminescentes contenant des métaux des terres rares
C09K 11/02 - Emploi de substances particulières comme liants, revêtements de particules ou milieux de suspension
A light-emitting device includes a base member having an outer lateral surface, an upper surface meeting the outer lateral surface, and a recess on an upper surface side, a light-emitting element disposed in the recess, a lens disposed on the upper surface of the base member and including a lens portion and a flange portion, and a reflective member disposed in surface-to-surface contact with both the upper surface of the base member and a lateral surface of the flange portion.
A method for manufacturing a light-emitting device includes: providing a structure including: a plurality of light-emitting elements each having a light-emitting surface, and a support member disposed at least between the plurality of light-emitting elements and supporting the plurality of light-emitting elements; disposing, on the structure, a mask member covering the support member between the plurality of light-emitting elements, the mask member defining a plurality of openings each positioned above a corresponding one of the light-emitting surfaces of the plurality of light-emitting elements; disposing a plurality of wavelength conversion members in the plurality of openings; and after disposing the plurality of wavelength conversion members, removing the mask member and the support member between the plurality of light-emitting elements.
A light emitting device includes a light emitting element having a light emission peak wavelength of 430 nm or more and 470 nm or less, and a fluorescent member containing a first fluorescent material having a light emission peak wavelength of 510 nm or more and less than 590 nm and a second fluorescent material having a light emission peak wavelength of 590 nm or more and 670 nm or less and containing a first fluoride fluorescent material having a composition included in the compositional formula represented by the following formula (1):
A light emitting device includes a light emitting element having a light emission peak wavelength of 430 nm or more and 470 nm or less, and a fluorescent member containing a first fluorescent material having a light emission peak wavelength of 510 nm or more and less than 590 nm and a second fluorescent material having a light emission peak wavelength of 590 nm or more and 670 nm or less and containing a first fluoride fluorescent material having a composition included in the compositional formula represented by the following formula (1):
where A1 includes K, M1 includes Si and Al, a and b satisfy 0
A nitride phosphor, having a composition that contains Eu, Si, Al, N, and a Group 2 element containing at least one selected from the group consisting of Mg, Ca, Sr, and Ba. With respect to a molar content of Al in the composition, a ratio of a total molar content of the Group 2 element and Eu is in a range of 0.8 to 1.1, a ratio of a molar content of Eu is in a range of 0.002 to 0.08, a ratio of a molar content of Si is in a range of 0.8 to 1.2, and a ratio of a total molar content of Si and Al is in a range of 1.8 to 2.2. The nitride phosphor has an average value of an aspect ratio, which is a minor-axis-to-major-axis ratio, in a range of 0.72 to 0.77, and an average circularity in a range of 0.82 to 0.92.
H10H 20/851 - Moyens de conversion de la longueur d’onde
C09K 11/08 - Substances luminescentes, p. ex. électroluminescentes, chimiluminescentes contenant des substances inorganiques luminescentes
C09K 11/77 - Substances luminescentes, p. ex. électroluminescentes, chimiluminescentes contenant des substances inorganiques luminescentes contenant des métaux des terres rares
A substrate including a base including a primary surface, a conductive member disposed on the primary surface. and a covering member. The conductive member includes a first portion including a first conductive layer and an aluminum layer layered in order from a bottom of the conductive member, a second portion including a gold layer on an uppermost surface of the second portion of the conductive member, and a third portion including the gold layer, the first conductive layer, and the aluminum layer layered in order from the bottom of the conductive member. The covering member covers a first boundary, which is a boundary between the first portion and the third portion, and a second boundary, which is a boundary between the second portion and the third portion.
H10H 29/24 - Ensembles de plusieurs dispositifs comprenant au moins un composant émetteur de lumière à semi-conducteurs couvert par le groupe comprenant plusieurs dispositifs émetteurs de lumière à semi-conducteurs
A method of manufacturing a light-emitting module includes: providing a first substrate that has an upper surface including an element mounting region and has first terminals disposed on the upper surface and located outward of the element mounting region; providing a second substrate that has an upper surface including a substrate mounting region in which the first substrate is to be mounted and has second terminals disposed on the upper surface and located outward of the substrate mounting region; mounting a plurality of light-emitting elements in the element mounting region of the first substrate; mounting the first substrate in the substrate mounting region of the second substrate; connecting respective ones of the first terminals and respective ones of the second terminals via respective ones of wires; and disposing a covering member that covers the wires, the first terminals, and the second terminals.
A lens includes: a first lens portion having a positive refractive power; and a second lens portion having a positive refractive power and located outward of an outer edge of the first lens portion in a top view. The first lens portion has an optical axis, a first light incident surface, and a first light exit surface located opposite to the first light incident surface. The second lens portion has a second light incident surface and a second light exit surface located opposite to the second light incident surface. In a cross section including the optical axis of the first lens portion: a lens main axis of the second lens portion is inclined with respect to the optical axis of the first lens portion such that the lens main axis has an increasing distance from the optical axis toward the second light exit surface from the second light incident surface.
H10H 29/855 - Moyens de mise en forme du champ optique, p. ex. lentilles
H10H 29/24 - Ensembles de plusieurs dispositifs comprenant au moins un composant émetteur de lumière à semi-conducteurs couvert par le groupe comprenant plusieurs dispositifs émetteurs de lumière à semi-conducteurs
A laser light source includes a semiconductor structure, a first electrode, and a first metal portion. The semiconductor structure includes a semiconductor layer configured to emit light. The semiconductor structure has an upper surface. The first electrode is provided on the upper surface of the semiconductor structure. The first metal portion is provided on the first electrode, with the first electrode being partially exposed from the first metal portion. A pattern indicating information on the semiconductor structure is provided in a region where the first electrode is partially exposed.
H01S 5/343 - Structure ou forme de la région activeMatériaux pour la région active comprenant des structures à puits quantiques ou à superréseaux, p. ex. lasers à puits quantique unique [SQW], lasers à plusieurs puits quantiques [MQW] ou lasers à hétérostructure de confinement séparée ayant un indice progressif [GRINSCH] dans des composés AIIIBV, p. ex. laser AlGaAs
87.
METHOD FOR MANUFACTURING SINTERED COMPACT AND SINTERED COMPACT
A method for manufacturing a sintered compact is provided, the method including: providing α-sialon phosphor particles; providing a formed body including forming a raw material mixture obtained by mixing the α-sialon phosphor particles and yttrium oxide particles; placing the formed body in a container containing pyrolytic boron nitride; disposing a first lid containing pyrolytic boron nitride at an opening of the container; and obtaining a first sintered compact containing an α-sialon phosphor crystal phase by subjecting the formed body in the container having the opening closed with the first lid to primary firing at a temperature in a range of 1800° C. to 2000° C.
C04B 35/597 - Produits céramiques mis en forme, caractérisés par leur compositionCompositions céramiquesTraitement de poudres de composés inorganiques préalablement à la fabrication de produits céramiques à base de non oxydes à base de borures, nitrures ou siliciures à base d'oxynitrures de silicium
C04B 35/626 - Préparation ou traitement des poudres individuellement ou par fournées
88.
METHOD OF MANUFACTURING LIGHT-EMITTING DEVICE, AND LIGHT-EMITTING DEVICE
A method of manufacturing a light-emitting device includes: providing a first structure including a first support substrate, a release portion, and a light-transmissive portion, in this order; providing a second structure including a second support substrate, and light-emitting elements temporarily fixed to the second support substrate, each including electrodes at its lower surface, and being temporarily fixed to the second support substrate via a temporary fixing layer; transferring the light-emitting elements to the light-transmissive portion by irradiating the temporary fixing layer with laser light; forming a light-shielding portion between the light-emitting elements; bonding the electrodes to the substrate; disposing a resin portion in at least a part of an area between each of the light-emitting elements and the substrate, in which a concentration of a filler contained in the resin portion is lower than that in the light-shielding portion; and releasing the first support substrate from the first structure.
H10H 29/24 - Ensembles de plusieurs dispositifs comprenant au moins un composant émetteur de lumière à semi-conducteurs couvert par le groupe comprenant plusieurs dispositifs émetteurs de lumière à semi-conducteurs
An oxide phosphor has a composition represented by Formula (1) below: (Li1-sM1s)(Mg1-tM2t)u(Ga1-vM3v)wOx:Cry,M4z (1), wherein in Formula (1), M1 is at least one element selected from the group consisting of Na, K, Rb, and Cs; M2 is at least one element selected from the group consisting of Ca, Sr, Ba, and Zn; M3 is at least one element selected from the group consisting of Al and Sc; M4 is at least one element selected from the group consisting of Ni, Ce, Eu, Fe, Mn, Nd, Tm, Ho, Er, and Yb; s, t, u, v, w, and x satisfy 0≤s≤0.5, 0≤t≤1.0, 0.03≤u≤10, 0≤v≤1.0, 5.1≤w≤25, 0.005≤u/w≤0.4, and 8.2≤x≤48; and when Li is taken as 1 or a total of Li and M1 is taken as 1, y and z satisfy 0.02≤y≤0.5, 0≤z≤0.3, and y>z with respect to Li or to the total of Li and M1, respectively.
C09K 11/62 - Substances luminescentes, p. ex. électroluminescentes, chimiluminescentes contenant des substances inorganiques luminescentes contenant du gallium, de l'indium ou du thalium
90.
LIGHT-EMITTING DEVICE FOR VEHICLE AND HEADLIGHT FOR VEHICLE
This light-emitting device for a vehicle is capable of emitting light that falls within the range of the ECE standard, has a correlated color temperature of higher than 5000 K but no higher than 7000 K, and has a color deviation duv of -0.02 to -0.01.
H10H 20/851 - Moyens de conversion de la longueur d’onde
B60Q 1/04 - Agencement des dispositifs de signalisation optique ou d'éclairage, leur montage, leur support ou les circuits à cet effet les dispositifs étant principalement destinés à éclairer la route en avant du véhicule ou d'autres zones de la route ou des environs les dispositifs étant des phares
F21S 41/148 - Diodes électroluminescentes [LED] la direction principale d’émission des LED faisant un angle avec l’axe optique du dispositif d’éclairage la direction principale d’émission des LED étant perpendiculaire à l’axe optique
F21V 3/08 - GlobesVasquesVerres de protection caractérisés par les matériaux, traitements de surface ou revêtements caractérisés par le matériau le matériau comprenant des substances photoluminescentes
F21V 7/08 - Structure de l'optique à courbure elliptique
H10H 20/00 - Dispositifs individuels émetteurs de lumière à semi-conducteurs inorganiques ayant des barrières de potentiel, p. ex. diodes électroluminescentes [LED]
A light irradiation device 2 has, on the distal end side of the light irradiation device, a first region 201 having a light emission part 111, and a second region 202 positioned closer to the proximal end side than the first region 201 and having a length of 30 mm or more. The second region 202 has higher flexibility than the first region 201. When the light irradiation device 2 is fixed in a position 30 mm from the distal end, and a position 20 mm from the distal end is pushed in by 1.0 mm in a direction perpendicular to an axis corresponding to the extending direction of the light irradiation device 2, the maximum push-in load is 19.6133 mN or less. The first region has a length of 4.44 mm or less, and the diameter of a circumscribed circle in a cross section in a direction orthogonal to the length direction is 0.7 mm or less.
This optical circuit comprises: an optical waveguide that has a first optical waveguide, a second optical waveguide, a third optical waveguide, and an optical branching part, the second optical waveguide and the third optical waveguide being connected to the first optical waveguide via the optical branching part; and an optical resonator that is a ring resonator or a disk resonator, the optical resonator being optically coupled to the second optical waveguide at a first location and optically coupled to the third optical waveguide at a second location. A diffraction grating is provided on the entire circumference or a part of the circumference of the optical resonator. In a plan view, the diffraction grating is asymmetric with respect to a straight line connecting the center of the optical branching part and the center of the optical resonator.
G02B 6/12 - Guides de lumièreDétails de structure de dispositions comprenant des guides de lumière et d'autres éléments optiques, p. ex. des moyens de couplage du type guide d'ondes optiques du genre à circuit intégré
G02B 6/124 - Lentilles géodésiques ou réseaux intégrés
G02B 6/125 - Courbures, branchements ou intersections
H01S 5/026 - Composants intégrés monolithiques, p. ex. guides d'ondes, photodétecteurs de surveillance ou dispositifs d'attaque
93.
LIGHT-EMITTING MODULE AND METHOD FOR MANUFACTURING THE SAME
A method for manufacturing a light-emitting module includes: providing a light-emitting element including a semiconductor layered body, a first electrode part, second electrode parts, and an insulating part disposed in areas between the first electrode part and the second electrode parts and at least one of areas between adjacent second electrode parts on the first surface, the insulating part protruding further away from the first surface than the first electrode part and the second electrode parts; providing an intermediate structure including a wiring substrate, a first conductive part, second conductive parts, and a holding part disposed in areas between the first conductive part and the second conductive parts and at least one of areas between adjacent second conductive parts on the second surface; disposing the light-emitting element on the intermediate structure; and forming the first bonding part and the second bonding part.
A light emitting device includes light emitting element(s). A light transmissive member is on an upper surface of the light emitting element(s). An upper surface area of the light transmissive member is smaller than a lower surface area of the light transmissive member. The upper surface area of the light transmissive member is smaller than a sum of upper surface areas of each light emitting element(s). The lower surface area of the light transmissive member is larger than the sum of the upper surface areas of each light emitting element(s). A light reflective member is provided having a first light reflective member and an underfill. The first light reflective member covers surfaces of the light transmissive member and lateral surfaces of the light emitting element(s) to expose the upper surface of the light transmissive member. The underfill covers the lateral and lower surfaces of each light emitting element(s).
H10H 20/853 - Encapsulations caractérisées par leur forme
H01L 25/075 - Ensembles consistant en une pluralité de dispositifs à semi-conducteurs ou d'autres dispositifs à l'état solide les dispositifs étant tous d'un type prévu dans une seule des sous-classes , , , , ou , p. ex. ensembles de diodes redresseuses les dispositifs n'ayant pas de conteneurs séparés les dispositifs étant d'un type prévu dans le groupe
H10H 20/813 - Corps ayant une pluralité de régions électroluminescentes, p. ex. LED à jonctions multiples ou dispositifs émetteurs de lumière ayant des régions photoluminescentes au sein des corps
H10H 20/823 - Matériaux des régions électroluminescentes comprenant uniquement des matériaux du groupe II-VI, p. ex. ZnO
H10H 20/824 - Matériaux des régions électroluminescentes comprenant uniquement des matériaux du groupe III-V, p. ex. GaP
H10H 20/825 - Matériaux des régions électroluminescentes comprenant uniquement des matériaux du groupe III-V, p. ex. GaP contenant de l’azote, p. ex. GaN
H10H 20/841 - Revêtements réfléchissants, p. ex. réflecteurs de Bragg en diélectriques
A light source including: a wiring substrate including a conductor layer and a first insulating layer arranged on an upper surface of the conductor layer; and first and second light-emitting devices arranged on an upper surface of the wiring substrate. The wiring substrate includes first, second, third, and fourth wiring lines arranged on the first insulating layer. The third and fourth wiring lines are electrically connected to the conductor layer. The first light-emitting device includes a first anode and a first cathode. The second light-emitting device includes a second anode and a second cathode. The first anode is electrically connected to the first wiring line. The first cathode and the second anode are electrically connected to the second wiring line. The second cathode is electrically connected to the third wiring line.
H01L 25/075 - Ensembles consistant en une pluralité de dispositifs à semi-conducteurs ou d'autres dispositifs à l'état solide les dispositifs étant tous d'un type prévu dans une seule des sous-classes , , , , ou , p. ex. ensembles de diodes redresseuses les dispositifs n'ayant pas de conteneurs séparés les dispositifs étant d'un type prévu dans le groupe
This light emitting device comprises: a base; at least one first light emitting element that is disposed on the base and emits light from an upper surface and a lateral surface thereof; a reflective member disposed in a vicinity of the at least one first light emitting element; and a lens that overlaps the at least one first light emitting element in a top view, wherein a shape of the lens in the top view is an elliptical shape having a major axis in an x direction and a minor axis in a y direction orthogonal to the x direction, and, regarding a region of the reflective member overlapping the lens, an area size of a portion of the region on the −y direction side of the major axis is larger than an area size of a portion of the region present on the +y direction side of the major axis in the top view.
H10H 20/855 - Moyens de mise en forme du champ optique, p. ex. lentilles
H10H 29/14 - Dispositifs intégrés comprenant au moins un composant émetteur de lumière à semi-conducteurs couvert par le groupe comprenant plusieurs composants émetteurs de lumière à semi-conducteurs
A light-emitting module includes: a support base having a plurality of placement surfaces arranged in a first direction; a plurality of light-emitting devices each disposed on the respective corresponding placement surface, and each including a semiconductor laser element, a first mirror member, a cover, and a second mirror member; a plurality of third mirror members; and a condensing lens. The first mirror member changes a traveling direction of a laser beam emitted from the semiconductor laser element. The cover transmits the laser beam having the changed traveling direction. The second mirror member further changes the traveling direction of the laser beam transmitted through the cover to a second direction. Each third mirror member changes the traveling direction of the laser beam from the second direction to the first direction. The condensing lens combines a plurality of laser beams and allows the combined light to be incident on an optical fiber.
A light emitting module including a module substrate and a plurality of element structure bodies disposed on the module substrate. Each element structure body of the plurality of element structure bodies includes a submount substrate, a light emitting element disposed on the submount substrate, a light transmitting member disposed on the light emitting element, and a first cover member covering a lateral face of the light emitting element on the submount substrate. The light emitting module further includes a second cover member covering lateral faces of adjacent element structure bodies of the plurality of element structure bodies. A distance between submount substrates of the adjacent element structure bodies ranges from 0.05 mm to 0.2 mm.
H01L 25/16 - Ensembles consistant en une pluralité de dispositifs à semi-conducteurs ou d'autres dispositifs à l'état solide les dispositifs étant de types couverts par plusieurs des sous-classes , , , , ou , p. ex. circuit hybrides
H01L 23/00 - Détails de dispositifs à semi-conducteurs ou d'autres dispositifs à l'état solide
A light-emitting module according to the present invention comprises: a support substrate which has a plurality of placement surfaces that are arranged in a first direction and that have heights decreasing along the first direction; a plurality of first laser light sources, one or more of which are disposed on each placement surface and which each emit, in a second direction, a first laser beam in a first peak wavelength range; a plurality of second laser light sources, one or more of which are disposed on each placement surface and which each emit, in a third direction, a second laser beam in a second peak wavelength range; a plurality of first mirror members, one or more of which are disposed on each placement surface and which each reflect the first laser beam in the first direction; a plurality of second mirror members, one or more of which are disposed on each placement surface and which each reflect the second laser beam in the first direction; and a condensing lens which combines a plurality of laser beams including the first and second laser beams that have been reflected by the first and second mirror members.
An optical circuit comprises a substrate 18 having a main surface, a first optical waveguide 10 provided on the main surface, and a second optical waveguide 20 optically coupled to the first optical waveguide. The first optical waveguide has a first cladding 12, a second cladding 16, and a first core 14 provided in the normal direction of the main surface. The second optical waveguide has a third cladding 22, a fourth cladding 26, and a second core 24 provided in the normal direction of the main surface. The material of the second core is different from the material of the first core. The refractive index of the substrate is greater than the refractive index of the third cladding with respect to the wavelength of light guided by the second optical waveguide. The second optical waveguide has a first region 31, a second region 32, and a third region 33. The first region includes an end portion on the side of the second core facing the first core. The thickness of the third cladding in the third region is greater than that of the first region. The thickness of the third cladding in the second region gradually increases from the first region side toward the third region side.
