A sintered body contains a fluorescent material being at least one selected from the group consisting of a nitride fluorescent material having a composition of formula (I) and an α-SiAlON fluorescent material having a composition of formula (II), and emits light having a color tone in an area A1 surrounded by lines connecting a point 1a (x=0.549, y=0.425), a point 2a (x=0.562, y=0.438), a point 3a (x=0.589, y=0.411), and a point 4a (x=0.576, y=0.407) in the chromaticity diagram of the CIE 1931 color system upon irradiation with excitation light, wherein, upon irradiation with excitation light, the light emitted from the sintered body has an emission spectrum in which an integral value ratio Z2/Z1 as described in the disclosure is 0.005 or more.
C09K 11/77 - Substances luminescentes, p. ex. électroluminescentes, chimiluminescentes contenant des substances inorganiques luminescentes contenant des métaux des terres rares
H01L 33/32 - Matériaux de la région électroluminescente contenant uniquement des éléments du groupe III et du groupe V de la classification périodique contenant de l'azote
H01L 33/50 - DISPOSITIFS À SEMI-CONDUCTEURS NON COUVERTS PAR LA CLASSE - Détails caractérisés par les éléments du boîtier des corps semi-conducteurs Éléments de conversion de la longueur d'onde
2.
COMPOUND FOR BONDED MAGNET, BONDED MAGNET, METHOD OF PRODUCING SAME, AND RESIN COMPOSITION FOR BONDED MAGNETS
A method of producing a compound for bonded magnets, the method including: heat-curing a thermosetting resin and a curing agent having a ratio of the number of reactive groups of the curing agent to the number of reactive groups of the thermosetting resin of at least 2 but not higher than 11 to obtain an additive for bonded magnets; and kneading the additive for bonded magnets, magnetic powder, and a thermoplastic resin to obtain a compound for bonded magnets in which a filling ratio of the magnetic powder is at least 91.5% by mass.
H01F 41/02 - Appareils ou procédés spécialement adaptés à la fabrication ou à l'assemblage des aimants, des inductances ou des transformateursAppareils ou procédés spécialement adaptés à la fabrication des matériaux caractérisés par leurs propriétés magnétiques pour la fabrication de noyaux, bobines ou aimants
B29C 45/00 - Moulage par injection, c.-à-d. en forçant un volume déterminé de matière à mouler par une buse d'injection dans un moule ferméAppareils à cet effet
B29K 77/00 - Utilisation de polyamides, p. ex. polyesteramides, comme matière de moulage
B29K 505/00 - Utilisation de métaux, leurs alliages ou leurs composés comme matière de remplissage
H01F 1/057 - Alliages caractérisés par leur composition contenant des métaux des terres rares et des métaux de transition magnétiques, p. ex. SmCo5 et des éléments IIIa, p. ex. Nd2Fe14B
A method of manufacturing a light emitting device includes: preparing a light emitting element comprising an external terminal having a first portion located on a semiconductor structure side and a second portion disposed on the first portion, wherein an area of the second portion is less than an area of the first portion; preparing a substrate having a wiring part; bonding the light emitting element and the wiring part by bringing the second portion of the external terminal into contact with the wiring part; and subsequent to bonding the light emitting element and the wiring part, forming plating continuously on lateral faces of the first and second portions, wherein a thickness of the second portion is 5 μm at most, and wherein the plating is formed such that the plating formed on the wiring part is in contact with the plating formed on the first portion.
H01L 33/38 - DISPOSITIFS À SEMI-CONDUCTEURS NON COUVERTS PAR LA CLASSE - Détails caractérisés par les électrodes ayant une forme particulière
H01L 33/62 - Dispositions pour conduire le courant électrique vers le corps semi-conducteur ou depuis celui-ci, p.ex. grille de connexion, fil de connexion ou billes de soudure
A light-emitting module includes: a first light source; and a second light source disposed separated from the first light source in a top view. The first light source includes: a plurality of light-emitting parts including a first light-emitting part and a plurality of second light-emitting parts arranged around the first light-emitting part, and a light-shielding member disposed between the plurality of light-emitting parts such that light-emitting surfaces of the plurality of respective light-emitting parts are exposed from the light-shielding member. The second light source comprises a third light-emitting part electrically connected in parallel with the first light-emitting part. Light emitted from the first light-emitting part and light emitted from the third light-emitting part at least partially overlap each other on an irradiation surface.
H01L 33/58 - DISPOSITIFS À SEMI-CONDUCTEURS NON COUVERTS PAR LA CLASSE - Détails caractérisés par les éléments du boîtier des corps semi-conducteurs Éléments de mise en forme du champ optique
H01L 25/075 - Ensembles consistant en une pluralité de dispositifs à semi-conducteurs ou d'autres dispositifs à l'état solide les dispositifs étant tous d'un type prévu dans une seule des sous-classes , , , , ou , p. ex. ensembles de diodes redresseuses les dispositifs n'ayant pas de conteneurs séparés les dispositifs étant d'un type prévu dans le groupe
5.
SUBSTRATE, LIGHT-EMITTING DEVICE, AND LIGHT-EMITTING MODULE
The present invention realizes a substrate that can be used in common for a plurality of light-emitting devices having different configurations of light-emitting elements. Provided is a substrate comprising: an upper surface; a lower surface; a first side surface; a second side surface facing the first side surface or located on the opposite side of the first side surface; a plurality of upper wiring parts including, on the upper surface, a first upper wiring part provided on a first side surface side and a second upper wiring part provided on the first side surface side or on a second side surface side so as to be separated from the first upper wiring part; and a plurality of lower wiring parts including, on the lower surface, a first lower wiring part that is provided on the first side surface side and that is electrically connected to the first upper wiring part, a second lower wiring part that is provided on the first side surface side or on the second side surface side so as to be separated from the first lower wiring part and that is electrically connected to the second upper wiring part, and a third lower wiring part that is provided on the second side surface side so as to be separated from the first lower wiring part and that is electrically connected to the first upper wiring part.
A nitride semiconductor light emitting element includes a semiconductor structure including an n-side semiconductor layer, a p-side semiconductor layer, and an active layer disposed between the n-side semiconductor layer and the p-side semiconductor layer, and a p-side electrode disposed on the p-side semiconductor layer. The p-side semiconductor layer includes a first semiconductor part that includes, successively from the p-side electrode side, a first layer contacting the p-side electrode and containing Al and a p-type impurity, a second layer containing a p-type impurity and having a lower Al composition ratio and a lower p-type impurity concentration than those of the first layer, and a third layer containing a p-type impurity and having a higher Al composition ratio and a lower p-type impurity concentration than that of the first layer, and a larger thickness than the thicknesses of the first and second layers.
H01L 33/02 - DISPOSITIFS À SEMI-CONDUCTEURS NON COUVERTS PAR LA CLASSE - Détails caractérisés par les corps semi-conducteurs
H01L 33/32 - Matériaux de la région électroluminescente contenant uniquement des éléments du groupe III et du groupe V de la classification périodique contenant de l'azote
A method for manufacturing a magnet unit includes: a process of placing a holding member in a mold, the holding member including a first surface, a second surface, and multiple holes extending from the first surface to the second surface, the mold including one or more gas venting grooves, the process of placing in the mold causing the second surface to face the one or more gas venting grooves and causing two or more of the multiple holes to be connected to each other via the one or more gas venting grooves; a process of injection-molding a magnetic material into the multiple holes of the holding member that is placed in the mold from a side of the first surface; and a process of removing the holding member from the mold.
H02K 15/03 - Procédés ou appareils spécialement adaptés à la fabrication, l'assemblage, l'entretien ou la réparation des machines dynamo-électriques des corps statoriques ou rotoriques comportant des aimants permanents
H02K 1/27 - Noyaux rotoriques à aimants permanents
A light-emitting device includes: a base having an upper surface; a lid body having an upper surface and a lower surface bonded to the base; and a lens member having a lower surface bonded to the lid body. An outer edge of the upper surface of the base has first and second sides parallel to each other. An outer edge of the lower surface of the lid body has first and second sides parallel to each other. In a top view, a distance from the second side of the base to the second side of the lid body is greater than a distance from the first side of the base to the first side of the lid body. A distance from the first side of the lid body to a lens surface is smaller than a distance from the second side of the lid body to the lens surface.
H01L 33/58 - DISPOSITIFS À SEMI-CONDUCTEURS NON COUVERTS PAR LA CLASSE - Détails caractérisés par les éléments du boîtier des corps semi-conducteurs Éléments de mise en forme du champ optique
A method for manufacturing a light-emitting device including providing a first structure having a support substrate, a first bonding member on a surface thereof, and light-emitting elements having a first surface in contact with the first bonding member, an opposite second surface, and electrodes on a second surface side. The method includes providing a second structure having a substrate including a base member and terminal portions on a surface thereof, and a second bonding member between the terminal portions and thicker than the terminal portions. The method includes disposing the first structure on the second bonding member such that respective electrodes and respective terminal portions are spaced apart from and facing each other, connecting the respective electrodes and the respective terminal portions, and after the connecting, exposing the first and second bonding members to a solution to remove them to separate off the support substrate from the light-emitting elements.
H01L 33/00 - DISPOSITIFS À SEMI-CONDUCTEURS NON COUVERTS PAR LA CLASSE - Détails
H01L 25/075 - Ensembles consistant en une pluralité de dispositifs à semi-conducteurs ou d'autres dispositifs à l'état solide les dispositifs étant tous d'un type prévu dans une seule des sous-classes , , , , ou , p. ex. ensembles de diodes redresseuses les dispositifs n'ayant pas de conteneurs séparés les dispositifs étant d'un type prévu dans le groupe
A light-emitting module includes: a substrate; a light source disposed on the substrate; an electronic component disposed on the substrate and separated from the light source; and a first light-transmissive member including a first lens and a first support, and covering the light source and the electronic component, the first support supporting the first lens and including a light diffusing substance. A light diffusivity of the first support is higher than a light diffusivity of the first lens. The first lens overlaps the light source and the first support overlaps the electronic component in a top view.
F21V 33/00 - Combinaisons structurales de dispositifs d'éclairage avec d'autres objets, non prévues ailleurs
F21V 3/06 - GlobesVasquesVerres de protection caractérisés par les matériaux, traitements de surface ou revêtements caractérisés par le matériau
F21V 5/04 - Réfracteurs pour sources lumineuses de forme lenticulaire
F21V 17/06 - Fixation des parties constitutives des dispositifs d'éclairage, p. ex. des abat-jour, des globes, des réfracteurs, des réflecteurs, des filtres, des écrans, des grilles ou des cages de protection sur le support de la source lumineuse ou par son intermédiaire
11.
LIGHT EMITTING DEVICE, RESIN PACKAGE, RESIN-MOLDED BODY, AND METHODS FOR MANUFACTURING LIGHT EMITTING DEVICE, RESIN PACKAGE AND RESIN-MOLDED BODY
A light emitting device includes: a resin package comprising a first lead, a second lead, and a resin part; and a light emitting element disposed on the first lead. The resin package has a rectangular shape in top view and comprises a first outer lateral surface, a second outer lateral surface on a side opposite the first outer lateral surface, a third outer lateral surface, and a fourth outer lateral surface on a side opposite the third outer lateral surface. At the first outer lateral surface, the first lead is exposed from the resin part, and the first lead and a portion of the resin part located at a lateral edge of the first lead are substantially coplanar with each other.
B29C 45/00 - Moulage par injection, c.-à-d. en forçant un volume déterminé de matière à mouler par une buse d'injection dans un moule ferméAppareils à cet effet
B29C 45/14 - Moulage par injection, c.-à-d. en forçant un volume déterminé de matière à mouler par une buse d'injection dans un moule ferméAppareils à cet effet en incorporant des parties ou des couches préformées, p. ex. moulage par injection autour d'inserts ou sur des objets à recouvrir
H01L 23/00 - Détails de dispositifs à semi-conducteurs ou d'autres dispositifs à l'état solide
A light emitting module includes: a light source including a plurality of light emitting parts that are configured to be turned on individually or configured to be turned on in groups of multiple light emitting parts; and a cover member disposed over the light source and configured to transmit light from the light source, the cover having an upper surface that includes a flat surface portion. The cover member includes, in a top view: a first region, a second region located around the first region, wherein a light diffusion effect of the second region is higher than a light diffusion effect of the first region, and a third region located inward of the first region and on which the light from the light source transmitted through the light from the light source is incident.
A method for producing a rare earth magnet that can improve magnetic properties by both increasing a density of a sintered body and suppressing strain of a magnetic phase. The method includes preparing a magnetic powder containing Sm, Fe, and N, preparing a modifier powder containing at least one of metallic zinc or a zinc alloy, mixing the magnetic powder and the modifier powder to obtain a mixed powder, performing compression molding on the mixed powder in a magnetic field to obtain a magnetic field molded body, and performing pressure sintering on the magnetic field molded body to obtain a sintered body. In the pressure sintering, the magnetic field molded body is pressed and sintered at a pressure of 500 MPa or more and 900 MPa or less and at a temperature of 360° C. or more and 390° C. or less for 1 hour or more and 24 hours or less.
H01F 41/02 - Appareils ou procédés spécialement adaptés à la fabrication ou à l'assemblage des aimants, des inductances ou des transformateursAppareils ou procédés spécialement adaptés à la fabrication des matériaux caractérisés par leurs propriétés magnétiques pour la fabrication de noyaux, bobines ou aimants
C22C 38/00 - Alliages ferreux, p. ex. aciers alliés
C22C 38/12 - Alliages ferreux, p. ex. aciers alliés contenant du tungstène, du tantale, du molybdène, du vanadium ou du niobium
C22C 38/14 - Alliages ferreux, p. ex. aciers alliés contenant du titane ou du zirconium
H01F 1/059 - Alliages caractérisés par leur composition contenant des métaux des terres rares et des métaux de transition magnétiques, p. ex. SmCo5 et des éléments Va, p. ex. Sm2Fe17N2
A semiconductor laser element includes a semiconductor multilayer portion including an active layer, the semiconductor multilayer portion including (i) a first region including a diffraction grating and (ii) a second region configured to cause laser light to propagate in multiple transverse modes in the second region, the second region including a core region and cladding regions provided on two opposite sides of the core region; at least one electrode disposed on the semiconductor multilayer portion; and a current shielding structure. The semiconductor laser element has a waveguide structure. In a top view, the first region includes a central region where light entering from the second region is propagated and a peripheral region located outward of the central region. In a top view, the current shielding structure is located at a position at least partially overlapping the peripheral region.
H01S 5/12 - Structure ou forme du résonateur optique le résonateur ayant une structure périodique, p. ex. dans des lasers à rétroaction répartie [lasers DFB]
H01S 5/22 - Structure ou forme du corps semi-conducteur pour guider l'onde optique ayant une structure à nervures ou à bandes
15.
METHOD FOR MANUFACTURING IMAGE DISPLAY DEVICE AND IMAGE DISPLAY DEVICE
An image display device includes: a light-transmitting substrate including a first surface; a circuit element located on the first surface; a first wiring layer electrically connected to the circuit element; a first insulating film covering the circuit element and the first wiring layer on the first surface; a conductive layer that comprises a light-reflective part and is located on the first insulating film; a first light-emitting element located on the light-reflective part and electrically connected to the light-reflective part; a second insulating film covering the first insulating film, the conductive layer, and at least a portion of the first light-emitting element; a second wiring layer located on the second insulating film, the second wiring layer being electrically connected to a surface of the first light-emitting element; and a first via extending through the first and second insulating films and electrically connecting the first wiring layer and the second wiring.
H10H 29/14 - Dispositifs intégrés comprenant au moins un composant émetteur de lumière à semi-conducteurs couvert par le groupe comprenant plusieurs composants émetteurs de lumière à semi-conducteurs
An optical device includes a laser light source; a first optical integrator configured to transmit laser light emitted from the laser light source; a second optical integrator configured to transmit the laser light emitted from the first optical integrator; and a retardation plate disposed between the laser light source and the second optical integrator, and configured to transmit a portion of the laser light so as to rotate a polarization of the transmitted portion of the laser light by 90 degrees.
The aim is to provide a light emitting element and a light emitting device that can achieve higher light extraction efficiency. A light emitting element comprises a substrate, a semiconductor structure disposed on the substrate and including successively from the substrate side an n-side semiconductor layer, an active layer, and a p-side semiconductor layer, a p-electrode disposed on and electrically connected to the p-side semiconductor layer, and an n-electrode disposed on and electrically connected to the n-side semiconductor layer. The n-electrode includes a base and a plurality of extended parts extending from the base. The substrate includes an exposed portion exposed from the semiconductor structure, and the exposed portion includes a first exposed portion positioned between two adjacent extended parts and a second exposed portion disposed in the peripheral portion of the substrate and connected to the first exposed portion in a top view. The p-electrode is positioned between the extended parts and the first exposed portion in a top view.
H10H 20/831 - Électrodes caractérisées par leur forme
H10H 20/825 - Matériaux des régions électroluminescentes comprenant uniquement des matériaux du groupe III-V, p. ex. GaP contenant de l’azote, p. ex. GaN
H10H 20/854 - Encapsulations caractérisées par leurs matériaux, p. ex. résines époxy ou silicone
18.
LIGHT-EMITTING DEVICE AND PLANAR LIGHT SOURCE THAT UTILIZES MULTIPLE WAVELENGTH CONVERSION LAYERS
A light-emitting device includes: a light-emitting element emitting a first light having a first peak wavelength; a first wavelength conversion member contacting a side surface of the light-emitting element and including a wavelength conversion material absorbing at least a portion of the first light and emitting a second light having a second peak wavelength different from the first peak wavelength; a second wavelength conversion member on the first wavelength conversion member, the second wavelength conversion member including a wavelength conversion material absorbing at least a portion of the first light and emitting a third light having a third peak wavelength different from the first and second peak wavelengths; and a first light-reflective member on the second wavelength conversion member and at least on the light-emitting element. A continuous light-emitting surface includes a side surface of the first wavelength conversion member and a side surface of the second wavelength conversion member.
H01L 33/50 - DISPOSITIFS À SEMI-CONDUCTEURS NON COUVERTS PAR LA CLASSE - Détails caractérisés par les éléments du boîtier des corps semi-conducteurs Éléments de conversion de la longueur d'onde
H01L 27/15 - Dispositifs consistant en une pluralité de composants semi-conducteurs ou d'autres composants à l'état solide formés dans ou sur un substrat commun comprenant des composants semi-conducteurs avec au moins une barrière de potentiel ou une barrière de surface, spécialement adaptés pour l'émission de lumière
H01L 33/10 - DISPOSITIFS À SEMI-CONDUCTEURS NON COUVERTS PAR LA CLASSE - Détails caractérisés par les corps semi-conducteurs ayant une structure réfléchissante, p.ex. réflecteur de Bragg en semi-conducteur
H01L 33/62 - Dispositions pour conduire le courant électrique vers le corps semi-conducteur ou depuis celui-ci, p.ex. grille de connexion, fil de connexion ou billes de soudure
19.
LIGHT-EMITTING MODULE AND METHOD FOR MANUFACTURING LIGHT-EMITTING MODULE
A light-emitting module includes: a light-emitting device; and a base that is electroconductive, the base including: a mounting surface that faces a first direction and on which the light-emitting device is mounted with a bonding material, and at least one protrusion that is adjacent to the mounting surface in a direction intersecting the first direction and protrudes in the first direction with respect to the mounting surface. The at least one protrusion includes a plurality of first surfaces that are in contact with the light-emitting device. The light-emitting device includes a light-emitting element and has a side surface at which an electroconductive part electrically connected to an electrode of the light-emitting element is exposed. The side surface is partially in contact with the first surfaces, and a part of the side surface at which the electroconductive part is exposed is not in contact with the first surfaces.
H01S 5/02257 - Découplage de lumière utilisant des fenêtres optiques, p. ex. spécialement adaptées pour réfléchir de la lumière sur un détecteur à l’intérieur du boîtier
H01S 5/02315 - Éléments de support, p. ex. bases ou montures
H01S 5/0236 - Fixation des puces laser sur des supports en utilisant un adhésif
20.
LIGHT-EMITTING DEVICE AND METHOD FOR PRODUCING SAME
Provided are: a light-emitting device that makes it possible to improve the light extraction efficiency from an upper surface of a light-emitting element while reducing deterioration of a light-reflective member arranged on a side surface of the light-emitting element; and a method for producing the light-emitting device. The light-emitting device comprises a substrate, a light-emitting element arranged on the substrate, and a light-reflective inorganic member that is arranged on a side surface of the light-emitting element and includes first oxide particles and an oxide layer covering the first oxide particles. The thickness of the light-reflective inorganic member is 1-100 μm. The ratio of the area of the first oxide particles to the area of the light-reflective inorganic member in a cross section perpendicular to the upper surface of the light-emitting element is 30%-50%.
H01L 33/60 - DISPOSITIFS À SEMI-CONDUCTEURS NON COUVERTS PAR LA CLASSE - Détails caractérisés par les éléments du boîtier des corps semi-conducteurs Éléments de mise en forme du champ optique Éléments réfléchissants
H01L 33/50 - DISPOSITIFS À SEMI-CONDUCTEURS NON COUVERTS PAR LA CLASSE - Détails caractérisés par les éléments du boîtier des corps semi-conducteurs Éléments de conversion de la longueur d'onde
H01L 33/56 - Matériaux, p.ex. résine époxy ou silicone
21.
LIGHT-EMITTING DEVICE AND METHOD FOR PRODUCING LIGHT-EMITTING DEVICE
The present disclosure provides a light-emitting device comprising a light reflection member with high heat dissipation. The light-emitting device according to the present disclosure includes: a light-emitting element including a semiconductor structure that has a light-emitting surface, an electrode formation surface on the opposite side of the light-emitting surface, and a side surface positioned between the light-emitting surface and the electrode formation surface, and an electrode provided on the electrode formation surface; and a light reflection member having a lower surface and covering the side surface of the semiconductor structure and the side surface of the electrode. The electrode has an exposed surface not covered by the light reflection member, and the light reflection member includes: a first light reflection part that covers a side surface of the semiconductor structure and includes an inorganic material serving as a main material, and a light reflection material having a refractive index higher than that of the inorganic material; and a second light reflection part that has a lower surface, covers at least a portion of the side surface of the electrode, includes an inorganic material, and includes or substantially does not include a light reflection material in a content smaller than that of the first light reflection part.
A light emitting device includes: an inner light emitting part including an inner light emitting element, and an inner wavelength conversion member disposed on the inner light emitting element, and a plurality of outer light emitting parts disposed around the inner light emitting part and connected in parallel to one another, each outer light emitting part including an outer light emitting element, and an outer wavelength conversion member disposed on the outer light emitting element. The outer light emitting parts include a first light emitting part that includes a first light emitting element and a first wavelength conversion member, and a second light emitting part that includes a second light emitting element and a second wavelength conversion member.
H01L 33/50 - DISPOSITIFS À SEMI-CONDUCTEURS NON COUVERTS PAR LA CLASSE - Détails caractérisés par les éléments du boîtier des corps semi-conducteurs Éléments de conversion de la longueur d'onde
A light-emitting device includes a light-emitting element and a plate-shaped light-transmissive member. The plate-shaped light-transmissive member is disposed on or above the light-emitting element. The light-transmissive member has a lower surface configured to receive light emitted from the light-emitting element and an upper surface opposite to the lower surface. The upper surface of the light-transmissive member serves as an emission surface. The light-transmissive member includes a first light-transmissive portion including a first sintered body containing a phosphor particle, and a second light-transmissive portion including a second sintered body containing a light-diffusing particle. The second sintered body has a relative density of 70% or more and 95% or less. The emission surface includes a first light-emitting region configured to emit light through the first light-transmissive portion, and a second light-emitting region configured to emit light through the second light-transmissive portion at a lower luminance than in the first light-emitting region.
F21V 3/08 - GlobesVasquesVerres de protection caractérisés par les matériaux, traitements de surface ou revêtements caractérisés par le matériau le matériau comprenant des substances photoluminescentes
F21V 9/32 - Éléments contenant un matériau photoluminescent distinct de la source de lumière ou espacé de cette source caractérisés par la disposition du matériau photoluminescent
F21V 19/00 - Montage des sources lumineuses ou des supports de sources lumineuses sur ou dans les dispositifs d'éclairage
A light source unit includes: a display device configured to emit light that has a substantially Lambertian light distribution and to display a picture; a first prism sheet on which the light emitted from the display device is incident; and an imaging optical system that includes an input element on which light emitted from the first prism sheet is incident and an output element on which light that has passed through the input element is incident, and configured such that light emitted from the output element forms a first image corresponding to the picture. The imaging optical system has a substantially telecentric property on a side of the first image.
Provided are a vehicular light-emitting device and a vehicular lamp that emit light of high luminous flux, and that emit light in a red color that can be distinguished from amber colors even by people with color vision impairment. This vehicular light emitting device is provided with a light-emitting element, and a phosphor that emits light as excited by light emitted from the light-emitting element. The device emits light of a region where, in the CIE 1931 color-space chromaticity diagram, the following regions overlap: a region located, in the chromaticity coordinates, on the lower side of a confusion color line that passes through a confused-colors center and point No. 1a, which is one of chromaticity points that satisfy the requirements for amber colors in the ECE standards; and a region R1 that is contained in a region R that satisfies the requirements for red colors in the ECE standards and is bounded by first to fourth lines connecting point No. 1r (x=0.6450, y=0.3350), point No. 2r (x=0.6508, y=0.3350), point No. 3r (x=0.7337, y=0.2645), and point No. 4r (x=0.7210, y=0.2590).
A method of manufacturing a light-emitting device includes: providing a substrate including a base, and a pair of wiring parts disposed on an upper surface side of the base; providing a light-emitting element including a semiconductor structure, and a pair of electrodes; disposing the light-emitting element above the substrate such that the electrodes face the wiring parts; disposing an electrically-conductive member containing copper such that the electrically-conductive member electrically connects the wiring parts to the electrodes and includes a body portion and a protruding portion, the body portion overlapping a corresponding wiring part of the wiring parts in a top view, and the protruding portion protruding outward such that a gap is located between the protruding portion and the base; and disposing a protective film at least in the gap in a state in which the gap is widened by heating the electrically-conductive member.
H01L 33/62 - Dispositions pour conduire le courant électrique vers le corps semi-conducteur ou depuis celui-ci, p.ex. grille de connexion, fil de connexion ou billes de soudure
H01L 25/075 - Ensembles consistant en une pluralité de dispositifs à semi-conducteurs ou d'autres dispositifs à l'état solide les dispositifs étant tous d'un type prévu dans une seule des sous-classes , , , , ou , p. ex. ensembles de diodes redresseuses les dispositifs n'ayant pas de conteneurs séparés les dispositifs étant d'un type prévu dans le groupe
A method of manufacturing a light-emitting device includes: preparing at least one first structure including a support substrate, an adhesive layer, and light-emitting elements each having a first surface, and a second surface, and comprising a pair of element electrodes disposed on a second surface side; preparing a second structure including a substrate including a base and a plurality of pairs of wirings, and a bonding member disposed between a pair of wirings of the plurality of pairs of wirings; obtaining a third structure by causing the pair of element electrodes to face the pair of wirings and bonding each of light-emitting elements to the substrate with the bonding member interposed therebetween in a state in which the light-emitting elements and the substrate are heated at a first temperature; heating the third structure at a second temperature equal to or higher than the first temperature; and removing the support substrate from the third structure.
H01L 33/62 - Dispositions pour conduire le courant électrique vers le corps semi-conducteur ou depuis celui-ci, p.ex. grille de connexion, fil de connexion ou billes de soudure
H01L 25/075 - Ensembles consistant en une pluralité de dispositifs à semi-conducteurs ou d'autres dispositifs à l'état solide les dispositifs étant tous d'un type prévu dans une seule des sous-classes , , , , ou , p. ex. ensembles de diodes redresseuses les dispositifs n'ayant pas de conteneurs séparés les dispositifs étant d'un type prévu dans le groupe
H01L 33/60 - DISPOSITIFS À SEMI-CONDUCTEURS NON COUVERTS PAR LA CLASSE - Détails caractérisés par les éléments du boîtier des corps semi-conducteurs Éléments de mise en forme du champ optique Éléments réfléchissants
28.
PLURALITY OF LIGHT-EMITTING DEVICES AND MANUFACTURING METHOD OF A PLURALITY OF LIGHT-EMITTING DEVICES
A plurality of light-emitting devices includes first, second, and third light-emitting devices. The first/second light-emitting device includes a first/second semiconductor laser element configured to emit light of a first/second color having a light emission peak wavelength of a first/second wavelength and a first/second reflective member having a reflectance of 90% or more with respect to the first/second wavelength. The third light-emitting device includes third and fourth semiconductor laser elements configured to emit light of the first and second colors having light emission peak wavelengths of third and fourth wavelengths, respectively, and a plurality of third reflective members having a reflectance of 90% or more with respect to the third wavelength and the fourth wavelength. A reflectance of the third reflective member with respect to light having the first/second wavelength is higher than a reflectance of the second/first reflective member with respect to the light having the first/second wavelength.
A method of producing a substrate includes: providing a ceramic substrate having a first surface and a second surface that is located opposite the first surface; irradiating a first part of the first surface with a first laser light having a first pulse width to perform ablation of the first part of the ceramic substrate; and irradiating a second part of either the first surface or the second surface with a second laser light having a second pulse width, which is longer than the first pulse width, the second part being located apart from the first part in a plan view to perform thermal processing of a third part including the first part and the second part. Upon removal of the third part and a part enclosed by the third part, an aperture that extends from the first surface to the second surface is formed in the ceramic substrate.
B23K 26/384 - Enlèvement de matière par perçage ou découpage par perçage de trous de forme spéciale
B23K 26/0622 - Mise en forme du faisceau laser, p. ex. à l’aide de masques ou de foyers multiples par commande directe du faisceau laser par impulsions de mise en forme
H01L 21/48 - Fabrication ou traitement de parties, p. ex. de conteneurs, avant l'assemblage des dispositifs, en utilisant des procédés non couverts par l'un uniquement des groupes ou
A light source device includes a substrate, a laser element on a main surface of the substrate and configured to emit laser light, an optical element on the main surface of the substrate and in an optical path of the laser light, and a polarization element on the optical element. The optical element has a first surface that reflects in a first direction a first component of the laser light incident onto the optical element from the laser element, and a second surface that reflects in the first direction a second component of the laser light incident onto the optical element from the laser element and transmitted through the first surface. The first component of the laser light reflected by the first surface is not transmitted through the polarization element and the second component of the laser light reflected by the second surface is transmitted through the polarization element.
A method for manufacturing a light-emitting device includes: providing a structure including: a substrate including a plurality of positive and negative wiring parts at an upper surface of the substrate, and a light source part disposed on the substrate, the light source part including: an element substrate, and a plurality of light-emitting parts, each of the light-emitting parts including: a semiconductor structure including a first surface facing the element substrate and a second surface positioned at a side opposite to the first surface, and positive and negative electrode parts disposed on the second surface of the semiconductor structure; providing a mold including an upper mold and a lower mold; disposing a first resin part between the upper surface of the substrate and the second surfaces of the semiconductor structures; and removing the element substrate from the light source part.
H01L 33/60 - DISPOSITIFS À SEMI-CONDUCTEURS NON COUVERTS PAR LA CLASSE - Détails caractérisés par les éléments du boîtier des corps semi-conducteurs Éléments de mise en forme du champ optique Éléments réfléchissants
H01L 25/075 - Ensembles consistant en une pluralité de dispositifs à semi-conducteurs ou d'autres dispositifs à l'état solide les dispositifs étant tous d'un type prévu dans une seule des sous-classes , , , , ou , p. ex. ensembles de diodes redresseuses les dispositifs n'ayant pas de conteneurs séparés les dispositifs étant d'un type prévu dans le groupe
H01L 33/56 - Matériaux, p.ex. résine époxy ou silicone
32.
ß-SIALON FLUORESCENT MATERIAL AND LIGHT EMITTING DEVICE
A β-SiAlON fluorescent material includes fluorescent material particles having a composition represented by the following formula (I), and a coating layer formed on the surface of the fluorescent material particles and having a refractive index smaller than that of the fluorescent material particles, wherein when the β-SiAlON fluorescent material is measured by inductively coupled plasma-atomic emission spectroscopy, an amount of the coating layer is 0.4% by mass or more relative to a total amount of the fluorescent material particles and the coating layer being 100% by mass:
A β-SiAlON fluorescent material includes fluorescent material particles having a composition represented by the following formula (I), and a coating layer formed on the surface of the fluorescent material particles and having a refractive index smaller than that of the fluorescent material particles, wherein when the β-SiAlON fluorescent material is measured by inductively coupled plasma-atomic emission spectroscopy, an amount of the coating layer is 0.4% by mass or more relative to a total amount of the fluorescent material particles and the coating layer being 100% by mass:
Si6-zAlzOzN8-z:Euy (I),
A β-SiAlON fluorescent material includes fluorescent material particles having a composition represented by the following formula (I), and a coating layer formed on the surface of the fluorescent material particles and having a refractive index smaller than that of the fluorescent material particles, wherein when the β-SiAlON fluorescent material is measured by inductively coupled plasma-atomic emission spectroscopy, an amount of the coating layer is 0.4% by mass or more relative to a total amount of the fluorescent material particles and the coating layer being 100% by mass:
Si6-zAlzOzN8-z:Euy (I),
wherein y and z satisfy 0
C09K 11/77 - Substances luminescentes, p. ex. électroluminescentes, chimiluminescentes contenant des substances inorganiques luminescentes contenant des métaux des terres rares
C09K 11/02 - Emploi de substances particulières comme liants, revêtements de particules ou milieux de suspension
H01L 33/50 - DISPOSITIFS À SEMI-CONDUCTEURS NON COUVERTS PAR LA CLASSE - Détails caractérisés par les éléments du boîtier des corps semi-conducteurs Éléments de conversion de la longueur d'onde
A nitride semiconductor light emitting element includes: a first n-type semiconductor layer, a first p-type semiconductor layer disposed above and in contact with the first n-type semiconductor layer; a first superlattice layer disposed above the first p-type semiconductor layer and containing a p-type impurity; an active layer disposed above the first superlattice layer, a second n-type semiconductor layer disposed above the active layer; a first electrode electrically connected to the first n-type semiconductor layer; and a second electrode electrically connected to the second n-type semiconductor layer.
H01L 33/04 - DISPOSITIFS À SEMI-CONDUCTEURS NON COUVERTS PAR LA CLASSE - Détails caractérisés par les corps semi-conducteurs ayant une structure à effet quantique ou un superréseau, p.ex. jonction tunnel
H01L 33/02 - DISPOSITIFS À SEMI-CONDUCTEURS NON COUVERTS PAR LA CLASSE - Détails caractérisés par les corps semi-conducteurs
H01L 33/08 - DISPOSITIFS À SEMI-CONDUCTEURS NON COUVERTS PAR LA CLASSE - Détails caractérisés par les corps semi-conducteurs ayant une pluralité de régions électroluminescentes, p.ex. couche électroluminescente discontinue latéralement ou région photoluminescente intégrée au sein du corps semi-conducteur
H01L 33/32 - Matériaux de la région électroluminescente contenant uniquement des éléments du groupe III et du groupe V de la classification périodique contenant de l'azote
The present invention provides a substrate and a light-emitting device excellent in heat dissipation. A substrate according to an embodiment of the present disclosure comprises a first member having a through-hole penetrating from an upper surface to a lower surface, and a second member disposed inside the through-hole. The second member includes: a first region including graphite; a second region disposed outside the first region in a top view, the second region including graphite and a thermally conductive material containing a metal and/or a ceramic, and having a volume fraction of graphite lower than that in the first region; and a third region disposed outside the second region in a top view, the third region including a thermally conductive material containing a metal and/or a ceramic, and having a volume fraction of the thermally conductive material higher than that in the second region. A light-emitting device according to an embodiment of the present disclosure comprises the substrate and a light source unit disposed above the substrate.
H01L 23/36 - Emploi de matériaux spécifiés ou mise en forme, en vue de faciliter le refroidissement ou le chauffage, p. ex. dissipateurs de chaleur
H01L 33/62 - Dispositions pour conduire le courant électrique vers le corps semi-conducteur ou depuis celui-ci, p.ex. grille de connexion, fil de connexion ou billes de soudure
H01L 33/64 - DISPOSITIFS À SEMI-CONDUCTEURS NON COUVERTS PAR LA CLASSE - Détails caractérisés par les éléments du boîtier des corps semi-conducteurs Éléments d'extraction de la chaleur ou de refroidissement
A light emitting element includes: a semiconductor structure including: a first semiconductor layer that has: a first face that has a peripheral region, and a central region surrounded by the peripheral region in a plan view, wherein a surface roughness of the central region is higher than a surface roughness of the peripheral region, and a second face that opposes the first face and has a first region and a second region, an active layer disposed on the first region, and a second semiconductor layer disposed on the active layer; a first electrode disposed on the second region and electrically connected to the first semiconductor layer; a second electrode disposed on the second semiconductor layer and electrically connected to the second semiconductor layer; a first reflecting film disposed only on the peripheral region among the surfaces of the semiconductor structure; and a first protective film disposed on the central region.
H01L 33/46 - Revêtement réfléchissant, p.ex. réflecteur de Bragg en diélectriques
H01L 25/075 - Ensembles consistant en une pluralité de dispositifs à semi-conducteurs ou d'autres dispositifs à l'état solide les dispositifs étant tous d'un type prévu dans une seule des sous-classes , , , , ou , p. ex. ensembles de diodes redresseuses les dispositifs n'ayant pas de conteneurs séparés les dispositifs étant d'un type prévu dans le groupe
H01L 33/22 - Surfaces irrégulières ou rugueuses, p.ex. à l'interface entre les couches épitaxiales
A light-emitting device according to an embodiment of the present disclosure includes: a light-emitting element; a base having an upper surface opposite to a lower surface of the light-emitting element, the base directly or indirectly supporting the light-emitting element; a lid body having a flat plate-like shape and having a lower surface opposite to an upper surface of the light-emitting element; and a first frame portion located on the upper surface of the base and surrounding the light-emitting element, in which the base includes a first conductor portion bonded to the lower surface of the light-emitting element, the lid body includes a second conductor portion bonded to the upper surface of the light-emitting element, and the first frame portion is directly or indirectly bonded to the lid body.
A light-emitting device includes a package and a semiconductor laser element. The package includes a frame portion, a lid portion, a base having a thickness in a range from 100 μm to 500 μm, and a first metal member arranged on upper or lower surface of the base, the first metal member having a thickness in a range from 10 μm to 150 μm. The base includes an insulating member having upper and lower surfaces respectively defining the upper and lower surfaces of the base. The insulating member defines a first through hole extending from the upper surface to the lower surface of the insulating member. A first conductive member is arranged in the first through hole. The first metal member covers the first through hole. The semiconductor laser element is electrically connected to the first conductive member and the first metal member.
A light-emitting device includes a base, a first metal member, a second metal member, a semiconductor laser element, and a lid body. The base has an upper surface and a lower surface. The first metal member is disposed on the upper surface of the base and has a thickness in a vertical direction in a range from 50 μm to 150 μm. The second metal member is disposed on the upper surface of the base and has a thickness in the vertical direction identical to the thickness of the first metal member. The second metal member is spaced apart from the first metal member in a top view and surrounds the first metal member. The semiconductor laser element is disposed on the first metal member. The lid body is bonded to the base via the second metal member.
A freshness preservation method for fruits and vegetables includes irradiating fruits or vegetables within 24 hours after harvest with light having a peak wavelength in a range from 256 nm to 297 nm, thereby extending, by equal to or greater than 25% compared to when the fruits or the vegetables are not irradiated by the light, time for preserving equal to or greater than 95% of a weight of the fruits or the vegetables before light irradiation.
A23B 7/015 - Conservation par irradiation ou traitement électrique sans effet de chauffage
A23L 3/00 - Conservation des aliments ou produits alimentaires, en général, p.ex. pasteurisation ou stérilisation, spécialement adaptée aux aliments ou produits alimentaires
A23L 3/28 - Conservation des aliments ou produits alimentaires, en général, p.ex. pasteurisation ou stérilisation, spécialement adaptée aux aliments ou produits alimentaires par irradiation sans chauffage par radiations ultraviolettes
40.
WIRING SUBSTRATE, COMPOSITE SUBSTRATE, AND MANUFACTURING METHOD OF WIRING SUBSTRATE
A wiring substrate includes a ceramic substrate having an upper surface, a lower surface, and a lateral surface. The lower surface includes a first lower surface and a second lower surface inward from the first lower surface. The lateral surface includes a first lateral surface and a second lateral surface inward from the first lateral surface. The wiring substrate includes a first wiring having a thickness of 80% or more of a height from the second lower surface to the first lower surface and disposed in contact with the second lower surface and the second lateral surface. A lateral surface of the first wiring is exposed from the first lateral surface. A main surface of 50% or more of a surface area of a lower surface of the first wiring is substantially parallel to the second lower surface and is disposed inward from the first lower surface.
C04B 41/90 - Revêtement ou imprégnation pour obtenir au moins deux revêtements superposés de compositions différentes au moins une couche comportant un métal
H01L 21/48 - Fabrication ou traitement de parties, p. ex. de conteneurs, avant l'assemblage des dispositifs, en utilisant des procédés non couverts par l'un uniquement des groupes ou
H01L 23/00 - Détails de dispositifs à semi-conducteurs ou d'autres dispositifs à l'état solide
H01L 23/498 - Connexions électriques sur des substrats isolants
A substrate includes a first member having a through hole extending from an upper surface to a lower surface thereof, and a second member disposed inside the through hole. The second member includes a first region containing graphite, a second region located outward of the first region in a top view, containing graphite and a thermally conductive material that contains at least one of a metal or a ceramic, and having a volume fraction of the graphite lower than a volume fraction of the graphite in the first region, and a third region located outward of the second region in the top view, containing a thermally conductive material that contains at least one of a metal or a ceramic, and having a volume fraction of the thermally conductive material higher than a volume fraction of the thermally conductive material in the second region.
H01L 33/64 - DISPOSITIFS À SEMI-CONDUCTEURS NON COUVERTS PAR LA CLASSE - Détails caractérisés par les éléments du boîtier des corps semi-conducteurs Éléments d'extraction de la chaleur ou de refroidissement
H01L 25/075 - Ensembles consistant en une pluralité de dispositifs à semi-conducteurs ou d'autres dispositifs à l'état solide les dispositifs étant tous d'un type prévu dans une seule des sous-classes , , , , ou , p. ex. ensembles de diodes redresseuses les dispositifs n'ayant pas de conteneurs séparés les dispositifs étant d'un type prévu dans le groupe
A light-emitting module includes: a light source; a lens located over the light source and configured to transmit light from the light source; and a cover member located over the lens and having a lower surface on which the light is to be incident and an upper surface from which the light is to be emitted, where the lower surface of the cover member includes: a first region on which the light from the light source after being transmitted through the lens is to be incident, and a second region located around the first region, a light diffusivity of the second region being higher than a light diffusivity of the first region; and a light-transmissive member covering the upper surface of the cover member and having a higher hardness than a hardness of the cover member.
F21V 3/10 - GlobesVasquesVerres de protection caractérisés par les matériaux, traitements de surface ou revêtements caractérisés par des revêtements
F21V 3/04 - GlobesVasquesVerres de protection caractérisés par les matériaux, traitements de surface ou revêtements
F21V 5/04 - Réfracteurs pour sources lumineuses de forme lenticulaire
F21Y 105/16 - Sources lumineuses planes comprenant un réseau bidimensionnel d’éléments générateurs de lumière ponctuelle caractérisées par la forme d’ensemble du réseau bidimensionnel carrée ou rectangulaire, p. ex. pour les panneaux de lumière
A light transmissive member, a light source device, a method of producing a light transmissive member, and a method of producing a light source device, which can suppress occurrence of damage, are provided. The light transmissive member includes a light transmissive base member having a first surface and a second surface positioned on a side opposite to the first surface, a light transmissive first film covering the first surface, a light transmissive second film covering the second surface, and a light transmissive third film provided over the second film. The first film contains hydrous alumina. The second film contains aluminum oxide having a crystallinity lower than that of α-alumina. Hardness of the third film is higher than hardness of the second film.
F21V 5/04 - Réfracteurs pour sources lumineuses de forme lenticulaire
F21Y 103/10 - Sources lumineuses de forme allongée, p. ex. tubes fluorescents comprenant un réseau linéaire d’éléments générateurs de lumière ponctuelle
A light-emitting device includes: a substrate; a plurality of light-emitting elements on or above the substrate, each of the light-emitting elements having an upper surface serving as a light-emitting surface and having a rectangular shape in a plan view from above the light-emitting device; and a plurality of light-transmissive members each having a rectangular shape in a plan view from above the light-emitting device and having a lower surface that faces the upper surface of each light-emitting element;
H01L 33/50 - DISPOSITIFS À SEMI-CONDUCTEURS NON COUVERTS PAR LA CLASSE - Détails caractérisés par les éléments du boîtier des corps semi-conducteurs Éléments de conversion de la longueur d'onde
H01L 25/075 - Ensembles consistant en une pluralité de dispositifs à semi-conducteurs ou d'autres dispositifs à l'état solide les dispositifs étant tous d'un type prévu dans une seule des sous-classes , , , , ou , p. ex. ensembles de diodes redresseuses les dispositifs n'ayant pas de conteneurs séparés les dispositifs étant d'un type prévu dans le groupe
H01L 27/15 - Dispositifs consistant en une pluralité de composants semi-conducteurs ou d'autres composants à l'état solide formés dans ou sur un substrat commun comprenant des composants semi-conducteurs avec au moins une barrière de potentiel ou une barrière de surface, spécialement adaptés pour l'émission de lumière
H01L 33/54 - Encapsulations ayant une forme particulière
H01L 33/58 - DISPOSITIFS À SEMI-CONDUCTEURS NON COUVERTS PAR LA CLASSE - Détails caractérisés par les éléments du boîtier des corps semi-conducteurs Éléments de mise en forme du champ optique
H01L 33/60 - DISPOSITIFS À SEMI-CONDUCTEURS NON COUVERTS PAR LA CLASSE - Détails caractérisés par les éléments du boîtier des corps semi-conducteurs Éléments de mise en forme du champ optique Éléments réfléchissants
H01L 33/62 - Dispositions pour conduire le courant électrique vers le corps semi-conducteur ou depuis celui-ci, p.ex. grille de connexion, fil de connexion ou billes de soudure
45.
POSITIVE ELECTRODE ACTIVE MATERIAL FOR NONAQUEOUS ELECTROLYTE SECONDARY BATTERY
A positive electrode active material for a nonaqueous electrolyte secondary battery includes particles of a lithium-transition metal composite oxide that contains nickel in the composition thereof and has a layered structure. The particles have an average particle size DSEM based on electron microscopic observation in a range of 1 μm to 7 μm in which a ratio D50/DSEM of a 50% particle size D50 in volume-based cumulative particle size distribution to the average particle size based on electron microscopic observation is in a range of 1 to 4, and a ratio D90/D10 of a 90% particle size D90 to a 10% particle size D10 in volume-based cumulative particle size distribution is 4 or less.
H01M 4/525 - Emploi de substances spécifiées comme matériaux actifs, masses actives, liquides actifs d'oxydes ou d'hydroxydes inorganiques de nickel, de cobalt ou de fer d'oxydes ou d'hydroxydes mixtes contenant du fer, du cobalt ou du nickel pour insérer ou intercaler des métaux légers, p. ex. LiNiO2, LiCoO2 ou LiCoOxFy
H01M 4/02 - Électrodes composées d'un ou comprenant un matériau actif
H01M 4/36 - Emploi de substances spécifiées comme matériaux actifs, masses actives, liquides actifs
H01M 4/505 - Emploi de substances spécifiées comme matériaux actifs, masses actives, liquides actifs d'oxydes ou d'hydroxydes inorganiques de manganèse d'oxydes ou d'hydroxydes mixtes contenant du manganèse pour insérer ou intercaler des métaux légers, p. ex. LiMn2O4 ou LiMn2OxFy
A light-emitting device includes a wiring substrate, a reflecting member positioned at an upper side of the wiring substrate, a light source positioned at an upper side of the reflecting member, and a bonding member; the wiring substrate includes a first wiring part and a second wiring part at an upper surface of the wiring substrate; the reflecting member has a first through-hole including a first inclined surface spreading upward; the light source includes a first electrode and a second electrode; the bonding member includes a first conductive part and a resin part; the first conductive part is positioned in the first through-hole and electrically connects the first wiring part and the first electrode; and the resin part contacts the first inclined surface, the light source, and the first conductive part.
G02F 1/1335 - Association structurelle de cellules avec des dispositifs optiques, p. ex. des polariseurs ou des réflecteurs
H01L 25/075 - Ensembles consistant en une pluralité de dispositifs à semi-conducteurs ou d'autres dispositifs à l'état solide les dispositifs étant tous d'un type prévu dans une seule des sous-classes , , , , ou , p. ex. ensembles de diodes redresseuses les dispositifs n'ayant pas de conteneurs séparés les dispositifs étant d'un type prévu dans le groupe
H01L 33/54 - Encapsulations ayant une forme particulière
H01L 33/58 - DISPOSITIFS À SEMI-CONDUCTEURS NON COUVERTS PAR LA CLASSE - Détails caractérisés par les éléments du boîtier des corps semi-conducteurs Éléments de mise en forme du champ optique
H01L 33/60 - DISPOSITIFS À SEMI-CONDUCTEURS NON COUVERTS PAR LA CLASSE - Détails caractérisés par les éléments du boîtier des corps semi-conducteurs Éléments de mise en forme du champ optique Éléments réfléchissants
H01L 33/62 - Dispositions pour conduire le courant électrique vers le corps semi-conducteur ou depuis celui-ci, p.ex. grille de connexion, fil de connexion ou billes de soudure
47.
LIGHT SOURCE UNIT, IMAGE DISPLAY DEVICE AND AUTOMOBILE
A light source unit includes: a display device configured to emit light that has a substantially Lambertian light distribution and to display an image including a plurality of pixels; a color change sheet on which light emitted from the display device is incident; an imaging optical system including an input element and an output element configured such that light emitted from the color change sheet is incident on the input element, light traveling via the input element is incident on the output element, and light emitted from the output element forms a first image corresponding to the image; and a drive unit configured to change a positional relationship of the display device and the color change sheet.
A manufacturing method of a mounting substrate includes: preparing a substrate including a mounting portion having a mounting surface, a first protruding portion having a first upper surface located above the mounting surface, and a second protruding portion having a second upper surface located above the mounting surface, the mounting surface being located between the first and second upper surfaces in a top view; disposing the substrate on a support member having a support surface such that the first and second upper surfaces face the support surface; and providing first and second through holes from a lower surface side toward an upper surface side of the substrate at first and second positions between which the mounting surface is interposed in the top view, the first and second positions not being located between the first upper surface and the mounting surface nor between the second upper surface and the mounting surface.
A bonded substrate includes a metal plate; a first ceramic; and a first metal body disposed between a first surface of the metal plate and a first surface of the first ceramic and disposed on 80% or more of a lateral surface continuous with the first surface of the first ceramic.
H01L 33/64 - DISPOSITIFS À SEMI-CONDUCTEURS NON COUVERTS PAR LA CLASSE - Détails caractérisés par les éléments du boîtier des corps semi-conducteurs Éléments d'extraction de la chaleur ou de refroidissement
50.
CERAMIC SUBSTRATE, LIGHT SOURCE DEVICE, METHOD OF MANUFACTURING CERAMIC SUBSTRATE, AND METHOD OF MANUFACTURING LIGHT SOURCE DEVICE
A ceramic substrate including a base having a first surface, a second surface opposite to the first surface, and a through hole having a first opening diameter at the first surface and a second opening diameter at the second surface. The first opening diameter is larger than the second opening diameter. The ceramic substrate also includes at least one solid particle disposed in the through hole, and an electrically-conductive member disposed in the through hole. A thermal conductivity of the at least one solid particle is higher than a thermal conductivity of the electrically-conductive member. The electrically-conductive member is continuous between the first surface and the second surface.
H01L 21/02 - Fabrication ou traitement des dispositifs à semi-conducteurs ou de leurs parties constitutives
H01L 33/62 - Dispositions pour conduire le courant électrique vers le corps semi-conducteur ou depuis celui-ci, p.ex. grille de connexion, fil de connexion ou billes de soudure
A light-emitting device includes a light source, a lens disposed above the light source, and a light-receiving element disposed at a position not intersecting with an optical axis of the lens and receiving external light via the lens. The lens includes a light adjustment part in a region overlapping the light-receiving element in a top view, and the light adjustment part for adjusting an amount of external light received by the light-receiving element.
An optical circuit capable of reducing a frequency variation of a light source caused by rotation is provided. The optical circuit includes a substrate, a laser light source formed on the substrate and including a first annular optical waveguide and a second annular optical waveguide that shares a part thereof with the first annular optical waveguide at one location, a first optical waveguide located on the substrate at a position separated from the laser light source and optically coupled to the laser light source, and a resonator optically coupled to the first optical waveguide.
H01S 5/343 - Structure ou forme de la région activeMatériaux pour la région active comprenant des structures à puits quantiques ou à superréseaux, p. ex. lasers à puits quantique unique [SQW], lasers à plusieurs puits quantiques [MQW] ou lasers à hétérostructure de confinement séparée ayant un indice progressif [GRINSCH] dans des composés AIIIBV, p. ex. laser AlGaAs
A lighting module includes: a substrate; a light source located on the substrate; a first lens on which light emitted from the light source is to be incident; and a first holder to which the substrate and the first lens are fixed. Light exiting the first lens is substantially parallel light that is substantially parallel to the optical axis when viewed from a first direction intersecting an optical axis of the light source. The light exiting the first lens is substantially parallel light oblique to the optical axis when viewed from a second direction intersecting the optical axis and the first direction. A first end part of the first lens in the second direction is fixed to the first holder. When viewed from a third direction in which the optical axis extends, the first holder does not protrude outward of the first lens in the second direction.
F21V 17/00 - Fixation des parties constitutives des dispositifs d'éclairage, p. ex. des abat-jour, des globes, des réfracteurs, des réflecteurs, des filtres, des écrans, des grilles ou des cages de protection
F21S 2/00 - Systèmes de dispositifs d'éclairage non prévus dans les groupes principaux ou , p. ex. à construction modulaire
F21V 5/04 - Réfracteurs pour sources lumineuses de forme lenticulaire
F21V 17/10 - Fixation des parties constitutives des dispositifs d'éclairage, p. ex. des abat-jour, des globes, des réfracteurs, des réflecteurs, des filtres, des écrans, des grilles ou des cages de protection caractérisée par des moyens de fixation spécifiques
A light-emitting device includes a wiring substrate and a plurality of light-emitting elements arrayed on the wiring substrate along a first direction and each having a rectangular shape. The light-emitting elements each include a first portion, and a plurality of second portions disposed on either side of the first portion in the first direction. The first portion includes a first semiconductor layered body and an electrode. The second portions each include a second semiconductor layered body, and a reflective layer connected to the second semiconductor layered body. The first portion includes a first length section and a second length section. In the first length section, a length of the first semiconductor layered body in the first direction is a first length. In the second length section, a length of the first semiconductor layered body in the first direction is a second length shorter than the first length.
H01L 33/20 - DISPOSITIFS À SEMI-CONDUCTEURS NON COUVERTS PAR LA CLASSE - Détails caractérisés par les corps semi-conducteurs ayant une forme particulière, p.ex. substrat incurvé ou tronqué
H01L 25/075 - Ensembles consistant en une pluralité de dispositifs à semi-conducteurs ou d'autres dispositifs à l'état solide les dispositifs étant tous d'un type prévu dans une seule des sous-classes , , , , ou , p. ex. ensembles de diodes redresseuses les dispositifs n'ayant pas de conteneurs séparés les dispositifs étant d'un type prévu dans le groupe
55.
METHOD OF PRODUCING POSITIVE ELECTRODE ACTIVE MATERIAL FOR NONAQUEOUS ELECTROLYTE SECONDARY BATTERY
A method of producing a positive electrode active material for a nonaqueous electrolyte secondary battery, the method includes preparing nickel-containing composite oxide particles having a ratio 1D90/1D10 of a 90% particle size 1D90 to a 10% particle size 1D10 in volume-based cumulative particle size distribution of 3 or less; obtaining a raw material mixture containing the composite oxide particles and a lithium compound and having a ratio of a total number of moles of lithium to a total number of moles of metal elements contained in the composite oxide in a range of 1 to 1.3; subjecting the raw material mixture to a heat treatment to obtain a heat-treated material; subjecting the heat-treated material to a dry-dispersion treatment to obtain a first dispersion; and bringing the first dispersion into contact with a liquid medium to obtain a second dispersion.
H01M 4/525 - Emploi de substances spécifiées comme matériaux actifs, masses actives, liquides actifs d'oxydes ou d'hydroxydes inorganiques de nickel, de cobalt ou de fer d'oxydes ou d'hydroxydes mixtes contenant du fer, du cobalt ou du nickel pour insérer ou intercaler des métaux légers, p. ex. LiNiO2, LiCoO2 ou LiCoOxFy
H01M 4/505 - Emploi de substances spécifiées comme matériaux actifs, masses actives, liquides actifs d'oxydes ou d'hydroxydes inorganiques de manganèse d'oxydes ou d'hydroxydes mixtes contenant du manganèse pour insérer ou intercaler des métaux légers, p. ex. LiMn2O4 ou LiMn2OxFy
H01M 10/0525 - Batteries du type "rocking chair" ou "fauteuil à bascule", p. ex. batteries à insertion ou intercalation de lithium dans les deux électrodesBatteries à l'ion lithium
A light emitting device includes: a first substrate; a light emitting element disposed on a first region of an upper surface of the first substrate; a light-transmissive member including disposed as a layer including a first portion that is located on an upper surface of the light emitting element and a second portion that is continuous with the first portion and is located on a second region of the upper surface of the first substrate; and a protrusion extending around the light emitting element. Part of the second portion of the light-transmissive member is located between the protrusion and the second region of the upper surface of the first substrate.
H01L 27/15 - Dispositifs consistant en une pluralité de composants semi-conducteurs ou d'autres composants à l'état solide formés dans ou sur un substrat commun comprenant des composants semi-conducteurs avec au moins une barrière de potentiel ou une barrière de surface, spécialement adaptés pour l'émission de lumière
H01L 33/10 - DISPOSITIFS À SEMI-CONDUCTEURS NON COUVERTS PAR LA CLASSE - Détails caractérisés par les corps semi-conducteurs ayant une structure réfléchissante, p.ex. réflecteur de Bragg en semi-conducteur
H01L 33/50 - DISPOSITIFS À SEMI-CONDUCTEURS NON COUVERTS PAR LA CLASSE - Détails caractérisés par les éléments du boîtier des corps semi-conducteurs Éléments de conversion de la longueur d'onde
H01L 33/56 - Matériaux, p.ex. résine époxy ou silicone
H01L 33/62 - Dispositions pour conduire le courant électrique vers le corps semi-conducteur ou depuis celui-ci, p.ex. grille de connexion, fil de connexion ou billes de soudure
57.
LIGHT EMITTING MODULE INCLUDING OPTICAL MEMBER THAT CONTROLS LIGHT DISTRIBUTION
A light emitting module includes: a light source; and an optical member configured to control a distribution of light emitted from the light source. The optical member comprises an incident face on which the light from the light source is incident, and an output face through which the light incident on the incident face exits. In a plan view: the optical member is shaped to have a long axis and a short axis orthogonal to the long axis, and a central axis of the optical member passes through the light source, the incident face, and the output face, while being orthogonal to a long axis direction parallel to the long axis and a short axis direction parallel to the short axis.
F24F 13/22 - Moyens pour éviter la condensation ou pour évacuer le condensat
G02B 27/09 - Mise en forme du faisceau, p. ex. changement de la section transversale, non prévue ailleurs
H01L 33/48 - DISPOSITIFS À SEMI-CONDUCTEURS NON COUVERTS PAR LA CLASSE - Détails caractérisés par les éléments du boîtier des corps semi-conducteurs
H01L 33/58 - DISPOSITIFS À SEMI-CONDUCTEURS NON COUVERTS PAR LA CLASSE - Détails caractérisés par les éléments du boîtier des corps semi-conducteurs Éléments de mise en forme du champ optique
58.
SEMICONDUCTOR LIGHT EMITTING DEVICE AND METHOD FOR MANUFACTURING THE SAME
A semiconductor light emitting device includes a semiconductor light source, a resin package surrounding the semiconductor light source, and a lead fixed to the resin package. The lead is provided with a die bonding pad for bonding the semiconductor light source, and with an exposed surface opposite to the die bonding pad The exposed surface is surrounded by the resin package in the in-plane direction of the exposed surface.
H01L 33/62 - Dispositions pour conduire le courant électrique vers le corps semi-conducteur ou depuis celui-ci, p.ex. grille de connexion, fil de connexion ou billes de soudure
H01L 23/31 - Encapsulations, p. ex. couches d’encapsulation, revêtements caractérisées par leur disposition
H01L 23/48 - Dispositions pour conduire le courant électrique vers le ou hors du corps à l'état solide pendant son fonctionnement, p. ex. fils de connexion ou bornes
H01L 23/488 - Dispositions pour conduire le courant électrique vers le ou hors du corps à l'état solide pendant son fonctionnement, p. ex. fils de connexion ou bornes formées de structures soudées
H01L 25/075 - Ensembles consistant en une pluralité de dispositifs à semi-conducteurs ou d'autres dispositifs à l'état solide les dispositifs étant tous d'un type prévu dans une seule des sous-classes , , , , ou , p. ex. ensembles de diodes redresseuses les dispositifs n'ayant pas de conteneurs séparés les dispositifs étant d'un type prévu dans le groupe
H01L 25/16 - Ensembles consistant en une pluralité de dispositifs à semi-conducteurs ou d'autres dispositifs à l'état solide les dispositifs étant de types couverts par plusieurs des sous-classes , , , , ou , p. ex. circuit hybrides
H01L 33/48 - DISPOSITIFS À SEMI-CONDUCTEURS NON COUVERTS PAR LA CLASSE - Détails caractérisés par les éléments du boîtier des corps semi-conducteurs
H01L 33/50 - DISPOSITIFS À SEMI-CONDUCTEURS NON COUVERTS PAR LA CLASSE - Détails caractérisés par les éléments du boîtier des corps semi-conducteurs Éléments de conversion de la longueur d'onde
H01L 33/54 - Encapsulations ayant une forme particulière
H01L 33/56 - Matériaux, p.ex. résine époxy ou silicone
H01L 33/60 - DISPOSITIFS À SEMI-CONDUCTEURS NON COUVERTS PAR LA CLASSE - Détails caractérisés par les éléments du boîtier des corps semi-conducteurs Éléments de mise en forme du champ optique Éléments réfléchissants
H01L 33/64 - DISPOSITIFS À SEMI-CONDUCTEURS NON COUVERTS PAR LA CLASSE - Détails caractérisés par les éléments du boîtier des corps semi-conducteurs Éléments d'extraction de la chaleur ou de refroidissement
59.
LIGHT-EMITTING DEVICE AND METHOD FOR MANUFACTURING SAME
A light-emitting device includes: a light-emitting element having a first surface as a light extraction surface, a second surface on an opposite side of the first surface, and a lateral surface connecting the first surface and the second surface and including an element electrode on the second surface; a substrate including a wiring member electrically connected to the element electrode; a light-transmissive member disposed above the first surface of the light-emitting element and allowing light from the light-emitting element to pass through; an inorganic member including a plurality of voids and disposed, on the substrate, on a lateral surface or lateral to the light-emitting element and on a lateral surface of the light-transmissive member; and a light-reflective member in contact with at least part of the inorganic member. A portion of the light-reflective member is impregnated in at least a portion of the plurality of voids.
H01L 33/60 - DISPOSITIFS À SEMI-CONDUCTEURS NON COUVERTS PAR LA CLASSE - Détails caractérisés par les éléments du boîtier des corps semi-conducteurs Éléments de mise en forme du champ optique Éléments réfléchissants
H01L 23/00 - Détails de dispositifs à semi-conducteurs ou d'autres dispositifs à l'état solide
H01L 25/16 - Ensembles consistant en une pluralité de dispositifs à semi-conducteurs ou d'autres dispositifs à l'état solide les dispositifs étant de types couverts par plusieurs des sous-classes , , , , ou , p. ex. circuit hybrides
H01L 33/50 - DISPOSITIFS À SEMI-CONDUCTEURS NON COUVERTS PAR LA CLASSE - Détails caractérisés par les éléments du boîtier des corps semi-conducteurs Éléments de conversion de la longueur d'onde
H01L 33/56 - Matériaux, p.ex. résine époxy ou silicone
H01L 33/58 - DISPOSITIFS À SEMI-CONDUCTEURS NON COUVERTS PAR LA CLASSE - Détails caractérisés par les éléments du boîtier des corps semi-conducteurs Éléments de mise en forme du champ optique
H01L 33/62 - Dispositions pour conduire le courant électrique vers le corps semi-conducteur ou depuis celui-ci, p.ex. grille de connexion, fil de connexion ou billes de soudure
60.
LIGHT EMITTING DEVICE, LIGHT FIXTURE, AND STREET LIGHT
A light emitting device comprises a light emitting element having a light emission peak wavelength in a range of 400 nm or more and 490 nm or less and a first fluorescent material having a light emission peak wavelength in a range of 570 nm or more and 680 nm or less, and emits light having a correlated color temperature being 1,950 K or less, an average color rendering index Ra being 70 or more, a full width at half maximum of a light emission peak having the maximum light emission intensity being 110 nm or less, and a ratio B/L of an effective radiance B to a luminance L being 0.151 or less, wherein the luminance of light emitted by the light emitting device in a range of 300 nm or more and 800 nm or less when B and L is as defined in the disclosure.
F21K 9/64 - Agencements optiques intégrés dans la source lumineuse, p. ex. pour améliorer l’indice de rendu des couleurs ou l’extraction de lumière en utilisant des moyens de conversion de longueur d’onde distincts ou espacés de l’élément générateur de lumière, p. ex. une couche de phosphore éloignée
C09K 11/77 - Substances luminescentes, p. ex. électroluminescentes, chimiluminescentes contenant des substances inorganiques luminescentes contenant des métaux des terres rares
F21W 131/103 - Éclairage de plein air ou d'extérieur des rues ou des routes
An LED package includes a light source, a light transmissive member, and a light reflecting layer. The light source includes a resin package, a light emitting element and a wavelength conversion material. The resin package includes first and second leads and a resin member. The resin package defines a recess having a bottom face defined by portions of the first and second leads, and a portion of the resin member, and a lateral wall defined by a portion of the resin member. The light emitting element is disposed on or above the bottom face in the recess. The wavelength conversion material is disposed in the recess. The light transmissive member is disposed on or above the light source. The light reflecting layer is disposed on or above the light transmissive member at least on an upper side along an optical axis of the light emitting element.
H01L 33/60 - DISPOSITIFS À SEMI-CONDUCTEURS NON COUVERTS PAR LA CLASSE - Détails caractérisés par les éléments du boîtier des corps semi-conducteurs Éléments de mise en forme du champ optique Éléments réfléchissants
F21V 3/06 - GlobesVasquesVerres de protection caractérisés par les matériaux, traitements de surface ou revêtements caractérisés par le matériau
F21Y 105/16 - Sources lumineuses planes comprenant un réseau bidimensionnel d’éléments générateurs de lumière ponctuelle caractérisées par la forme d’ensemble du réseau bidimensionnel carrée ou rectangulaire, p. ex. pour les panneaux de lumière
A light-emitting device includes: a substrate made of a metal material and having an upper surface, the upper surface including a recessed portion, the recessed portion having a bottom surface including a flat region; a submount disposed on the bottom surface of the recessed portion; a semiconductor laser element disposed on the submount, and configured to emit a laser light; a lens support member disposed on the submount; a lens supported by the lens support member, and configured to collimate or converge the laser light emitted from the semiconductor laser element; and a frame body made of a ceramic material and surrounding the semiconductor laser element. In a top view, each of the substrate and the semiconductor laser element has a rectangular shape having long sides and short sides. The long sides of the substrate and the long sides of the semiconductor laser element are parallel to one another.
H01S 5/02208 - SupportsBoîtiers caractérisés par la forme des boîtiers
H01S 5/02218 - Matériaux du boîtierMatériaux de remplissage du boîtier
H01S 5/02255 - Découplage de lumière utilisant des éléments de déviation de faisceaux lumineux
H01S 5/02326 - Dispositions pour le positionnement relatif des diodes laser et des composants optiques, p. ex. rainures dans le support pour fixer des fibres optiques ou des lentilles
A light-emitting device includes: one or more light-emitting elements; a package in which the one or more light-emitting elements are arranged, the package including one or more wiring regions; an optical member fixed to the package, the optical member having a lens portion having a lens surface including a first lens, and a non-lens portion that is a portion that does not overlap the lens surface in a top view; and one or more adhesives fixing the optical member to the package. The package has an emission surface through which light from the one or more light-emitting elements exits the package. The optical member has an incidence surface on which the light exiting the package enters the optical member, and the lens surface from which the light that has entered the optical member exits the optical member.
H01S 5/02234 - Boîtiers remplis de résineBoîtiers en résine
H01S 5/02253 - Découplage de lumière utilisant des lentilles
H01S 5/02255 - Découplage de lumière utilisant des éléments de déviation de faisceaux lumineux
H01S 5/02257 - Découplage de lumière utilisant des fenêtres optiques, p. ex. spécialement adaptées pour réfléchir de la lumière sur un détecteur à l’intérieur du boîtier
H01S 5/0236 - Fixation des puces laser sur des supports en utilisant un adhésif
H01S 5/40 - Agencement de plusieurs lasers à semi-conducteurs, non prévu dans les groupes
64.
LIGHT-EMITTING DEVICE, LIGHTING APPLIANCE, AND STREET LIGHT
Provided is a light-emitting device, a lighting appliance, and a street light that emit light with minimal negative effects on the behavior of sea turtles and which makes irradiated objects easily visible to humans. The light-emitting device includes a light-emitting element having an emission peak wavelength within a range from 400 nm to 490 nm; and a first phosphor having an emission peak wavelength within a range from 570 nm to 680 nm, wherein the light-emitting device, lighting appliance, and street light emit light that has a correlated color temperature of 1950 K or less, an average color rendering index Ra of 40 or greater, a full width at half maximum of an emission spectrum indicating a maximum emission intensity in an emission spectrum of the light-emitting device of 110 nm or less, and a sea turtle light attraction index T derived from Equation (1) of 0.416 or less.
F21K 9/64 - Agencements optiques intégrés dans la source lumineuse, p. ex. pour améliorer l’indice de rendu des couleurs ou l’extraction de lumière en utilisant des moyens de conversion de longueur d’onde distincts ou espacés de l’élément générateur de lumière, p. ex. une couche de phosphore éloignée
F21V 9/30 - Éléments contenant un matériau photoluminescent distinct de la source de lumière ou espacé de cette source
H01L 33/50 - DISPOSITIFS À SEMI-CONDUCTEURS NON COUVERTS PAR LA CLASSE - Détails caractérisés par les éléments du boîtier des corps semi-conducteurs Éléments de conversion de la longueur d'onde
A light-emitting device includes: a light-emitting element including a first surface, a second surface, and a plurality of third surfaces, the light-emitting element including: a first conductive member and a second conductive member positioned at the second surface and arranged in a first direction; a covering member including: a first covering part covering a region of the second surface between the first conductive member and the second conductive member, and a second covering part covering the plurality of third surfaces, where the covering member does not cover at least a portion of the first conductive member and at least a portion of the second conductive member; a first metal film covering a portion of the first covering part; and a second metal film separated from the first metal film, the second metal film covering a portion of the first covering part.
H01L 33/62 - Dispositions pour conduire le courant électrique vers le corps semi-conducteur ou depuis celui-ci, p.ex. grille de connexion, fil de connexion ou billes de soudure
H01L 25/075 - Ensembles consistant en une pluralité de dispositifs à semi-conducteurs ou d'autres dispositifs à l'état solide les dispositifs étant tous d'un type prévu dans une seule des sous-classes , , , , ou , p. ex. ensembles de diodes redresseuses les dispositifs n'ayant pas de conteneurs séparés les dispositifs étant d'un type prévu dans le groupe
This laser welding method comprises: a first step for setting, for example, a processing target containing a metal member and a plurality of metal foils having been laminated, in a state in which a surface of the processing target is irradiated with laser light from a laser welding device, on a support device; and a second step for joining the metal member and the plurality of metal foils by irradiating the surface with laser light so as to form a welded part existing in the metal member and penetrate the plurality of metal foils in the laminating direction. In the second step, the welded part is formed at least on the surface so as to be connected in a direction in which the plurality of irradiation reference positions are arranged, by sequentially performing, at each of a plurality of irradiation reference positions arranged at intervals on the surface, point-shape irradiation in a stopped state or in a state of revolving about a corresponding irradiation reference position.
In this laser welding method, during a first step, for example, a first member and a second member having a curved protruding surface protruding toward the first member are caused to approach each other so as to compress a plurality of metal foil sheets in a state of being sandwiched between the first member and the curved projecting surface in the stacking direction, whereby a compressed section bent in a state of protruding in a first direction along the curved projecting surface is formed in the plurality of metal foil sheets such that at least the metal foil positioned at an end portion of the compressed section in the first direction is partially plastically deformed. In a second step following the first step, a metal member and a site including the compressed section of the plurality of metal foil sheets are bonded in a state where the metal member and the end portion of the compressed section in the first direction contact each other.
A manufacturing method for a light-emitting device includes: forming a first metal film electrically connecting a first terminal and a first pad on a substrate such that the first metal film covers a part of an upper surface of each of the first terminal and the first pad; forming a first insulating film by insulating a front surface side of the first metal film while maintaining electrical connection between the first terminal and the first pad; mounting a light-emitting element having a first electrode on the substrate by bringing the first electrode into contact with the upper surface of the first terminal; forming a first plating film on surfaces of the first terminal and the first electrode in a state where the first metal film and the first insulating film remain formed; and removing the first insulating film and the first metal film after the first plating film is formed.
H01L 33/00 - DISPOSITIFS À SEMI-CONDUCTEURS NON COUVERTS PAR LA CLASSE - Détails
H01L 33/46 - Revêtement réfléchissant, p.ex. réflecteur de Bragg en diélectriques
H01L 33/62 - Dispositions pour conduire le courant électrique vers le corps semi-conducteur ou depuis celui-ci, p.ex. grille de connexion, fil de connexion ou billes de soudure
69.
LIGHT-EMITTING DEVICE, PLANAR LIGHT SOURCE, AND LIQUID CRYSTAL DISPLAY DEVICE
A light-emitting device includes A light-emitting device according to one embodiment of the present disclosure includes: a support body including a wall portion, a main surface surrounded by the wall portion, and a recessed portion defined by the wall portion and the main surface; a light-emitting element mounted on the main surface; and a light-transmissive member disposed on the wall portion and the light-emitting element. An upper surface of the light-transmissive member includes a first surface, a second surface surrounded by the first surface in a plan view and protruding upward relative to the first surface in a cross-sectional view, and a third surface having a curved shape and connecting the first surface and the second surface in a cross-sectional view. An upper surface of the wall portion includes a first inclined surface inclined with respect to the main surface. The third surface is located above the first inclined surface.
H01L 25/075 - Ensembles consistant en une pluralité de dispositifs à semi-conducteurs ou d'autres dispositifs à l'état solide les dispositifs étant tous d'un type prévu dans une seule des sous-classes , , , , ou , p. ex. ensembles de diodes redresseuses les dispositifs n'ayant pas de conteneurs séparés les dispositifs étant d'un type prévu dans le groupe
H01L 33/50 - DISPOSITIFS À SEMI-CONDUCTEURS NON COUVERTS PAR LA CLASSE - Détails caractérisés par les éléments du boîtier des corps semi-conducteurs Éléments de conversion de la longueur d'onde
70.
LIGHT SOURCE MODULE AND ULTRAVIOLET LIGHT FLUID TREATMENT DEVICE
A light source module includes a substrate having an upper surface; a light source disposed on the upper surface of the substrate; and an optical member including a plurality of light controllers and disposed above the substrate with the light source interposed therebetween. The light source includes a plurality of first light emitting parts and a plurality of second light emitting parts. The plurality of light controllers include a first light controller and a plurality of second light controllers. The first light controller overlaps one or more of the plurality of first light emitting parts in a top view. Each of the plurality of second light controllers overlaps a corresponding one of the plurality of second light emitting parts in the top view.
A61L 2/10 - Procédés ou appareils de désinfection ou de stérilisation de matériaux ou d'objets autres que les denrées alimentaires ou les lentilles de contactAccessoires à cet effet utilisant des phénomènes physiques des radiations des ultraviolets
F21V 7/06 - Structure de l'optique à courbure parabolique
F21V 7/24 - Réflecteurs pour sources lumineuses caractérisés par les matériaux, traitements de surface ou revêtements caractérisés par le matériau
F21V 17/12 - Fixation des parties constitutives des dispositifs d'éclairage, p. ex. des abat-jour, des globes, des réfracteurs, des réflecteurs, des filtres, des écrans, des grilles ou des cages de protection caractérisée par des moyens de fixation spécifiques par vissage
71.
PLANAR LIGHT SOURCE AND LIQUID CRYSTAL DISPLAY DEVICE
A planar light source has a plurality of light sources, a substrate, and a partitioning member. The partitioning member includes a first member provided with first partitioned parts each having a first bottom part and first oblique parts surrounding the first bottom part that are arranged on the substrate in a matrix, and a second member provided with second partitioned parts each having a second bottom part and second oblique parts surrounding the second bottom part that are arranged on the substrate in a matrix. The first member further has first outer oblique parts overlapping the second oblique parts located along the outer edge of the second member on the first member side. The first bottom parts and the second bottom parts each have a light source disposition opening, and the light sources are individually disposed on the substrate exposed in the light source disposition openings.
09 - Appareils et instruments scientifiques et électriques
Produits et services
Light-emitting diodes [LED]; semiconductors; semiconductor
elements; semiconductor devices; semiconductor wafers;
organic light-emitting diodes [OLED]; light emitting diode
displays and their parts; LED monitors and their parts;
display monitors; backlight module (part of liquid crystal
display device), using light-emitting diodes [LED] as light
source; projectors and their parts; printed circuit board
with LED used as light source of liquid crystal displays
mounted; printed circuit board with LED used as light source
of lighting apparatus mounted; printed circuit board; light
source module (parts for displays for computers) using
light-emitting diodes [LED] as light source; computers and
their parts and accessories; computers peripherals and their
parts and accessories; light source module (parts for
displays for tablet computers) using light-emitting diodes
[LED] as light source; tablet computers and their parts and
accessories; light source module (parts for displays for
television receivers) using light-emitting diodes [LED] as
light source; television receivers [TV sets] and their parts
and accessories; light source module (parts for displays for
navigational apparatus for automobiles) using light-emitting
diodes [LED] as light source; navigational apparatus for
automobiles and their parts and accessories; light source
module (parts for displays for personal digital assistants)
using light-emitting diodes [LED] as light source; personal
digital assistants and their parts and accessories; light
source module (parts for liquid crystal displays) using
light-emitting diodes [LED] as light source; LCDs [liquid
crystal displays] and their parts and accessories;
electronic display units; visual display units; electronic
numeric displays; meters.
A light emitting element includes: a conductive member having a first through hole; a reflecting layer disposed in the first through hole; an insulation layer disposed on the conductive member and the reflecting layer and having second through holes positioned so as not to overlap the first through hole in a plan view; a semiconductor structure including a p-type semiconductor layer disposed on the insulation layer, an emission layer disposed on the p-type semiconductor layer, and an n-type semiconductor layer disposed on the emission layer in part; an n-electrode disposed on and electrically connected to the n-type semiconductor layer; and p-electrode electrically connected to the conductive member. A reflectance of the reflecting layer for a peak wavelength of light emitted from the emission layer is higher than the reflectance of the conductive member for the peak wavelength of the light emitted from the emission layer.
H01L 33/10 - DISPOSITIFS À SEMI-CONDUCTEURS NON COUVERTS PAR LA CLASSE - Détails caractérisés par les corps semi-conducteurs ayant une structure réfléchissante, p.ex. réflecteur de Bragg en semi-conducteur
H01L 33/24 - DISPOSITIFS À SEMI-CONDUCTEURS NON COUVERTS PAR LA CLASSE - Détails caractérisés par les corps semi-conducteurs ayant une forme particulière, p.ex. substrat incurvé ou tronqué de la région électroluminescente, p.ex. jonction du type non planaire
H01L 33/30 - Matériaux de la région électroluminescente contenant uniquement des éléments du groupe III et du groupe V de la classification périodique
A light-emitting element includes a semiconductor structure including: an n-type semiconductor layer including a first n-type semiconductor layer and a second n-type semiconductor layer, an active layer, and a p-type semiconductor layer. The active layer is located between the n-type semiconductor layer and the p-type semiconductor layer in a thickness direction. An n-side electrode electrically connected to the n-type semiconductor layer. A p-side electrode electrically connected to the p-type semiconductor layer.
H01L 33/38 - DISPOSITIFS À SEMI-CONDUCTEURS NON COUVERTS PAR LA CLASSE - Détails caractérisés par les électrodes ayant une forme particulière
H01L 33/30 - Matériaux de la région électroluminescente contenant uniquement des éléments du groupe III et du groupe V de la classification périodique
H01L 33/62 - Dispositions pour conduire le courant électrique vers le corps semi-conducteur ou depuis celui-ci, p.ex. grille de connexion, fil de connexion ou billes de soudure
75.
MANUFACTURING METHOD OF LIGHT-EMITTING DEVICE, AND LIGHT-EMITTING DEVICE
A method of manufacturing a light-emitting device according to an aspect of the present disclosure includes: providing a light-emitting device intermediate including a light-emitting element and a covering member intermediate that contains a light reflective material and an alkali metal silicate and covers the light-emitting element; and immersing the covering member intermediate in an aqueous solution containing an alkaline earth metal halide salt to form a covering member containing an alkaline earth metal silicate.
H01L 33/60 - DISPOSITIFS À SEMI-CONDUCTEURS NON COUVERTS PAR LA CLASSE - Détails caractérisés par les éléments du boîtier des corps semi-conducteurs Éléments de mise en forme du champ optique Éléments réfléchissants
H01L 33/56 - Matériaux, p.ex. résine époxy ou silicone
A light emitting device includes a first semiconductor laser element configured to emit light in a first direction, and second and third semiconductor laser elements spaced apart in a second direction perpendicular to the first direction, a base member, and wires. The base member includes a bottom part, a frame part, and first and second electrode layers. The second electrode layer is disposed on a planar surface of the frame part intersecting at least a part of an inner surface. In the top view, the planar surface is not arranged on a side spaced apart from the semiconductor laser elements in the first direction. The wire connecting the second semiconductor laser element to the base member is bonded to the second electrode layer disposed on the planar surface arranged on a side spaced apart from the semiconductor laser elements in a direction opposite to the first direction.
H01L 33/48 - DISPOSITIFS À SEMI-CONDUCTEURS NON COUVERTS PAR LA CLASSE - Détails caractérisés par les éléments du boîtier des corps semi-conducteurs
H01L 23/00 - Détails de dispositifs à semi-conducteurs ou d'autres dispositifs à l'état solide
H01L 33/38 - DISPOSITIFS À SEMI-CONDUCTEURS NON COUVERTS PAR LA CLASSE - Détails caractérisés par les électrodes ayant une forme particulière
H01L 33/54 - Encapsulations ayant une forme particulière
H01L 33/62 - Dispositions pour conduire le courant électrique vers le corps semi-conducteur ou depuis celui-ci, p.ex. grille de connexion, fil de connexion ou billes de soudure
H01L 33/64 - DISPOSITIFS À SEMI-CONDUCTEURS NON COUVERTS PAR LA CLASSE - Détails caractérisés par les éléments du boîtier des corps semi-conducteurs Éléments d'extraction de la chaleur ou de refroidissement
77.
REFLECTIVE MEMBER, PLANAR LIGHT SOURCE, AND LIQUID CRYSTAL DISPLAY DEVICE
A planar light source includes a reflective member. The reflective member defines at least one slit including at least one first slit arranged in a first region extending in a first direction and intersecting a first virtual straight line at a prescribed position in the first region. The first virtual straight line is parallel to the first direction.
Provided is a light-emitting device capable of improving discernibility of letters or the like when used by a person with reduced visual sensitivity to blue light. The light-emitting device comprises a light-emitting element emitting light having an emission peak wavelength in a range of 440 nm to 470 nm, and a wavelength conversion member including a plurality of phosphors emitting light when excited by the light from the light emitting element. Ratios of luminous intensities of the light emitted from the light emitting device at wavelengths 480 nm, 530 nm, and 550 nm to the luminous intensity at the peak emission wavelength attributed to the light emitting element in an emission spectrum are 0.05 to 0.20, 0.20 to 0.35, and 0.23 to 0.38, respectively.
H01L 33/50 - DISPOSITIFS À SEMI-CONDUCTEURS NON COUVERTS PAR LA CLASSE - Détails caractérisés par les éléments du boîtier des corps semi-conducteurs Éléments de conversion de la longueur d'onde
A light emitting module includes: a substrate; a plurality of light sources fixed on the substrate and generating individually controllable outputs; a light shielding member disposed between the light sources; a first lens that is disposed above the light sources and on which the light emitted from each of the light sources becomes incident; and a drive unit capable of rotating the substrate. The light sources include a first light source and a second light source. The angle formed by the axis of rotation of the substrate and the optical axis of first light emitted by the first light source and exiting the first lens differs from the angle formed by the axis of rotation and the optical axis of second light emitted by the second light source and exiting the first lens. The second light can irradiate a first circular track having the axis of rotation as its center.
An optical circuit includes a resonator and an optical waveguide that includes a ridge formed upon substrate or a semiconductor layer. The resonator has a light circulating surface and is disposed such that part of the light circulating surface faces the upper surface of the ridge, across a first gap. The distance between part of the light circulating surface and the upper surface of the ridge facing the part of the light circulating surface is shorter than the distance that an evanescent wave protrudes.
G02B 6/125 - Courbures, branchements ou intersections
G02B 6/12 - Guides de lumièreDétails de structure de dispositions comprenant des guides de lumière et d'autres éléments optiques, p. ex. des moyens de couplage du type guide d'ondes optiques du genre à circuit intégré
81.
METHOD FOR MANUFACTURING LIGHT-EMITTING DEVICE AND SEPARATION METHOD
A method for manufacturing a light-emitting device includes preparing a stacked body including a substrate and a semiconductor layer on the substrate; and separating the substrate from the semiconductor layer by irradiating the stacked body with a laser light. A first region of the stacked body corresponding to an outer perimeter region of the semiconductor layer and a second region of the stacked body corresponding to a center region of the semiconductor layer are simultaneously irradiated with the laser light during the separating. An irradiation intensity of the laser light at the second region of the stacked body is greater than an irradiation intensity of the laser light at the first region of the stacked body.
H01L 21/683 - Appareils spécialement adaptés pour la manipulation des dispositifs à semi-conducteurs ou des dispositifs électriques à l'état solide pendant leur fabrication ou leur traitementAppareils spécialement adaptés pour la manipulation des plaquettes pendant la fabrication ou le traitement des dispositifs à semi-conducteurs ou des dispositifs électriques à l'état solide ou de leurs composants pour le maintien ou la préhension
B32B 43/00 - Opérations spécialement adaptées aux produits stratifiés et non prévues ailleurs, p. ex. réparationAppareils pour ces opérations
H01L 33/62 - Dispositions pour conduire le courant électrique vers le corps semi-conducteur ou depuis celui-ci, p.ex. grille de connexion, fil de connexion ou billes de soudure
82.
METHOD OF MANUFACTURING OPTICAL MEMBER, AND LIGHT EMITTING DEVICE
A method of manufacturing an optical member includes: providing a polycrystalline wavelength conversion member including phosphor particles and having a first surface and a second surface opposite to the first surface; forming a modified portion inside the wavelength conversion member by focusing laser light inside the wavelength conversion member; and cleaving the wavelength conversion member with the modified portion being a starting point, which includes pressing the wavelength conversion member from a first surface side.
H01L 33/58 - DISPOSITIFS À SEMI-CONDUCTEURS NON COUVERTS PAR LA CLASSE - Détails caractérisés par les éléments du boîtier des corps semi-conducteurs Éléments de mise en forme du champ optique
The present invention provides a bonded magnet having good heat resistance. The present invention relates to a bonded magnet containing a SmFeN magnetic powder, nylon 12, and a hexafluoroisopropanol-unextractable component. The present invention also relates to a method of preparing a bonded magnet, including: bringing a raw material bonded magnet containing a SmFeN magnetic powder and nylon 12 into contact with an amorphizing agent; and heat-treating the raw material bonded magnet in contact with the amorphizing agent.
H01F 1/055 - Alliages caractérisés par leur composition contenant des métaux des terres rares et des métaux de transition magnétiques, p. ex. SmCo5
C22C 38/00 - Alliages ferreux, p. ex. aciers alliés
H01F 1/059 - Alliages caractérisés par leur composition contenant des métaux des terres rares et des métaux de transition magnétiques, p. ex. SmCo5 et des éléments Va, p. ex. Sm2Fe17N2
H01F 41/02 - Appareils ou procédés spécialement adaptés à la fabrication ou à l'assemblage des aimants, des inductances ou des transformateursAppareils ou procédés spécialement adaptés à la fabrication des matériaux caractérisés par leurs propriétés magnétiques pour la fabrication de noyaux, bobines ou aimants
H02K 1/02 - Détails du circuit magnétique caractérisés par le matériau magnétique
84.
COMPOSITE SUBSTRATE AND METHOD FOR MANUFACTURING SAME
A composite substrate including a metal substrate having a first surface and a second surface opposite to the first surface, a ceramic substrate, and a bonding member disposed on the first surface. The bonding member bonds the metal substrate and the ceramic substrate. The ceramic substrate includes a plurality of sections and a groove between sections of the plurality of sections adjacent to each other. The bonding member is present in the groove.
C04B 37/02 - Liaison des articles céramiques cuits avec d'autres articles céramiques cuits ou d'autres articles, par chauffage avec des articles métalliques
85.
CATHODE ACTIVE MATERIAL FOR SECONDARY BATTERY AND METHOD OF PRODUCING THE SAME
A method of producing a cathode active material for a secondary battery is provided. The method includes preparing a mixture comprising a lithium source, a phosphate source, an iron source, a carbon source, a boron source comprising an oxo acid of boron, and a liquid medium; granulating the mixture to obtain a precursor; and heat-treating the precursor to obtain a lithium transition metal compound having an olivine structure, wherein in the mixture, a total molar amount of boron atoms contained in the boron source is more than 0% and less than 3% with respect to a total molar amount of iron atoms contained in the iron source as 100%.
H01M 4/58 - Emploi de substances spécifiées comme matériaux actifs, masses actives, liquides actifs de composés inorganiques autres que les oxydes ou les hydroxydes, p. ex. sulfures, séléniures, tellurures, halogénures ou LiCoFyEmploi de substances spécifiées comme matériaux actifs, masses actives, liquides actifs de structures polyanioniques, p. ex. phosphates, silicates ou borates
C01B 25/45 - Phosphates contenant plusieurs métaux ou un métal et l'ammonium
H01M 4/02 - Électrodes composées d'un ou comprenant un matériau actif
A method for producing a ceramic sintered body includes: preparing a molded body containing a nitride fluorescent material having the composition containing Si; N; at least one alkaline earth metal element M1; and a metal element M2 being at least one selected from the group consisting of Eu, Ce, Tb, and Mn, to obtain a composition as described in the disclosure; obtaining a first sintered body by performing primary calcination of the molded body; obtaining a second sintered body by performing secondary calcination of the first sintered body in contact with a solid composed of a molybdenum metal or an alloy containing molybdenum as a main component; and obtaining a third sintered body by performing third calcination of the second sintered body while being placed in a container containing a metal having a melting point higher than that of the molybdenum metal.
C09K 11/77 - Substances luminescentes, p. ex. électroluminescentes, chimiluminescentes contenant des substances inorganiques luminescentes contenant des métaux des terres rares
C01B 21/06 - Composés binaires de l'azote avec les métaux, le silicium ou le bore
A method for manufacturing a light-emitting device includes preparing a wafer in which multiple semiconductor parts are arranged on a first surface of a first substrate, disposing a resin member covering the first surface and the multiple semiconductor parts, disposing a second substrate on the resin member, removing the first substrate, forming a dielectric layer continuously covering upper surfaces of the multiple semiconductor parts and an upper surface of the resin member, causing an upper surface of the dielectric layer to approach flat, selectively removing the dielectric layer located on the upper surface of the resin member, and directly bonding a wavelength conversion member to the upper surface of the dielectric layer.
A light-emitting module including a substrate including a support member having a first surface and a wiring layer provided on the first surface, and a plurality of light-emitting elements provided on the first surface and electrically connected to the wiring layer. A plurality of light adjustment members is provided on a side of upper surfaces of the light-emitting elements, and spaced apart from the light-emitting elements, respectively. At least one light-shielding member is provided on the first surface, provided surrounding a first light-emitting element among the light-emitting elements and a first light adjustment member among the light adjustment members in plan view, and provided between the first light-emitting element and a second light-emitting element among the light-emitting elements in cross-sectional view. A light-transmissive member covers the first surface, the wiring layer, the light-emitting elements, the light adjustment members, and the at least one light-shielding member.
H01L 33/60 - DISPOSITIFS À SEMI-CONDUCTEURS NON COUVERTS PAR LA CLASSE - Détails caractérisés par les éléments du boîtier des corps semi-conducteurs Éléments de mise en forme du champ optique Éléments réfléchissants
H01L 25/075 - Ensembles consistant en une pluralité de dispositifs à semi-conducteurs ou d'autres dispositifs à l'état solide les dispositifs étant tous d'un type prévu dans une seule des sous-classes , , , , ou , p. ex. ensembles de diodes redresseuses les dispositifs n'ayant pas de conteneurs séparés les dispositifs étant d'un type prévu dans le groupe
H01L 33/62 - Dispositions pour conduire le courant électrique vers le corps semi-conducteur ou depuis celui-ci, p.ex. grille de connexion, fil de connexion ou billes de soudure
A light source device includes: a plurality of light emitting parts, each having an upper surface that includes a light emitting surface; an optical lens located above the light emitting surfaces of the light emitting parts, the optical lens having: a first surface including a first incident region, and a second surface including a second incident region; and a light converging member located between the light emitting parts and the optical lens, the light converging member including: a plurality of light entering portions, each corresponding to a respective one of a plurality of light emitting parts and covering the light emitting surface of the respective one of the light emitting parts, and a plurality of light emission portions, each corresponding to a respective one of the plurality of light entering portions.
A light emitting device includes: a plurality of sub-mounts including at least a first sub-mount and a second sub-mount; a plurality of semiconductor laser elements including a first semiconductor laser element mounted on the first sub-mount and a second semiconductor laser element mounted on the second sub-mount; a plurality of protective elements including a first protective element mounted on the first sub-mount and a second protective element mounted on the second sub-mount; and a plurality of wires including a first wire, wherein a first end of the first wire is joined to the first protective element and a second end of the first wire is joined to the second sub-mount, and wherein the first wire overlaps a portion of the first semiconductor laser element in a top view.
H01S 5/02208 - SupportsBoîtiers caractérisés par la forme des boîtiers
H01S 5/02255 - Découplage de lumière utilisant des éléments de déviation de faisceaux lumineux
H01S 5/02257 - Découplage de lumière utilisant des fenêtres optiques, p. ex. spécialement adaptées pour réfléchir de la lumière sur un détecteur à l’intérieur du boîtier
H01S 5/02325 - Composants intégrés mécaniquement aux éléments de montage ou aux micro-bancs optiques
A method of producing a magnetic powder includes performing a phosphorus treatment to obtain a phosphorus compound and a rare earth-iron-nitrogen-based magnetic powder, the phosphorus treatment including adding an inorganic acid to a slurry containing: a rare earth-iron-nitrogen-based magnetic powder containing R, Fe, and N, where R represents at least one of rare earth elements selected from the group consisting of Y, Ce, Pr, Nd, Gd, Tb, Dy, Ho, Er, Tm, Lu, and Sm, and if R contains Sm, Sm constitutes less than 50 atm % of a total R atomic content; water; and a phosphorus-containing substance.
H01F 1/055 - Alliages caractérisés par leur composition contenant des métaux des terres rares et des métaux de transition magnétiques, p. ex. SmCo5
B22F 1/145 - Traitement chimique, p. ex. passivation ou décarburation
H01F 1/059 - Alliages caractérisés par leur composition contenant des métaux des terres rares et des métaux de transition magnétiques, p. ex. SmCo5 et des éléments Va, p. ex. Sm2Fe17N2
H05K 9/00 - Blindage d'appareils ou de composants contre les champs électriques ou magnétiques
92.
LIGHT-EMITTING DEVICE, LIGHT-EMITTING MODULE, AND METHOD FOR MANUFACTURING LIGHT-EMITTING DEVICE
A light-emitting device includes a package, a light-emitting element, a first spacer, an optical member, and a first bonding portion. The package includes a lid body having an upper surface. The light-emitting element is disposed in an internal space of the package. The first spacer is disposed on the upper surface of the lid body and has an upper surface. The optical member is disposed above the lid body and has an upper surface and a lower surface. The first bonding portion bonds the lid body and the optical member. The first bonding portion is arranged between the upper surface of the lid body and the lower surface of the optical member and between the upper surface of the first spacer and the lower surface of the optical member.
H01S 5/02257 - Découplage de lumière utilisant des fenêtres optiques, p. ex. spécialement adaptées pour réfléchir de la lumière sur un détecteur à l’intérieur du boîtier
H01S 5/02255 - Découplage de lumière utilisant des éléments de déviation de faisceaux lumineux
A method of manufacturing a light-emitting element includes: preparing a wafer including a substrate, and a semiconductor structure disposed on the substrate; and forming a plurality of light-emitting element regions by dividing the semiconductor structure. The forming of the plurality of light-emitting element regions includes: forming a plurality of first masks on the semiconductor structure such that each of the plurality of first masks covers a respective first region where one of the plurality of light-emitting element regions is to be formed, and each of the plurality of first masks has an area greater than an area of the respective first region in a plan view, and exposing the substrate through the semiconductor structure by removing a portion of the semiconductor structure that is not covered by the plurality of first masks.
A method of producing a cylindrical bonded magnet includes providing a mold including an inner mold portion, an outer mold portion, a first orientation magnet, and a second orientation magnet, and performing molding to obtain a cylindrical bonded magnet by filling a region between the outer surface of the inner mold portion and the inner surface of the outer mold portion with a resin composition. When viewed in a cross-section, a first distance is shorter than a second distance, the first distance is a straight line distance along a magnetic field application direction and is tangent to a circle defined by the inner surface of the outer mold portion, and the second distance is a straight line distance along the magnetic field application direction and passes through a center of a circle defined by the outer surface of the inner mold portion.
B22F 3/22 - Fabrication de pièces ou d'objets à partir de poudres métalliques, caractérisée par le mode de compactage ou de frittageAppareils spécialement adaptés à cet effet pour la fabrication de pièces par coulée en moule poreux ou absorbant, c.-à-d. par coulée d'une suspension de poudre métallique dans un moule poreux, d'une façon analogue au coulage de la barbotine
H01F 1/057 - Alliages caractérisés par leur composition contenant des métaux des terres rares et des métaux de transition magnétiques, p. ex. SmCo5 et des éléments IIIa, p. ex. Nd2Fe14B
H01F 41/02 - Appareils ou procédés spécialement adaptés à la fabrication ou à l'assemblage des aimants, des inductances ou des transformateursAppareils ou procédés spécialement adaptés à la fabrication des matériaux caractérisés par leurs propriétés magnétiques pour la fabrication de noyaux, bobines ou aimants
95.
PLANAR LIGHT SOURCE AND THE METHOD OF MANUFACTURING THE SAME
A planar light source includes a light source, a light guide member, a wiring substrate, a light reflecting sheet and a pair of conducting members. The light source has a pair of electrodes on one face. The light guide member covers the light source while the electrodes are exposed from the light guide member. The wiring substrate has a wiring layer. The light reflecting sheet is interposed between the light guide member and the wiring substrate and defining a pair of first through holes at positions aligned with the electrodes on a one-to-one basis. The conducting members are respectively disposed in the first through holes and electrically connecting the electrodes to the wiring layer.
F21K 9/68 - Détails des réflecteurs faisant partie de la source lumineuse
F21Y 105/16 - Sources lumineuses planes comprenant un réseau bidimensionnel d’éléments générateurs de lumière ponctuelle caractérisées par la forme d’ensemble du réseau bidimensionnel carrée ou rectangulaire, p. ex. pour les panneaux de lumière
96.
SOLID ELECTROLYTE MATERIAL FOR FLUORIDE ION BATTERIES AND PRODUCTION METHOD FOR SOLID ELECTROLYTE MATERIAL FOR FLUORIDE ION BATTERIES
Provided is a solid electrolyte material for fluoride ion batteries which has high fluoride ion conductivity. The solid electrolyte material for fluoride ion batteries includes a metal composite fluoride that includes, as its main phase, a crystal structure containing, in a fluorite structure containing a fluoride ion, a lanthanoid metal ion, and an alkali earth metal ion, an adduct ion having an ion radius larger than that of the alkali earth metal ion. The metal composite fluoride has a composition in which a ratio of a number of moles of the fluoride ion to a total number of moles of the lanthanoid metal ion, the alkali earth metal ion, and the adduct ion is greater than 1.87 and is smaller than 3, and a ratio of a number of moles of the adduct ion to a number of moles of the alkali earth metal ion is smaller than 1.
C01F 17/36 - Composés contenant des métaux de terres rares et au moins un élément autre qu’un métal des terres rares, l'oxygène ou l'hydrogène, p. ex. La4S3Br6 le seul anion étant un halogénure, p. ex. NaYF4
A light-emitting element includes a semiconductor structure body, a light-transmissive conductive film, a light-transmissive insulating film provided with a plurality of first openings, and a light-reflective conductive film contacting the light-transmissive conductive film in the first openings. In a top view, the extending portions of a first semiconductor layer include end portions (the portion of the extending portion located closest to a side of a second outer peripheral portion), the light-transmissive conductive film includes outer edges facing the end portions of the extending portions in a second direction, respectively, the first openings are not located between a first outer peripheral portion and a first straight line passing through an outer edge closest to the second outer peripheral portion among the plurality of outer edges of the light-transmissive conductive film and extending in a first direction, and are located between the first straight line and the second outer peripheral portion.
H01L 33/10 - DISPOSITIFS À SEMI-CONDUCTEURS NON COUVERTS PAR LA CLASSE - Détails caractérisés par les corps semi-conducteurs ayant une structure réfléchissante, p.ex. réflecteur de Bragg en semi-conducteur
H01L 33/38 - DISPOSITIFS À SEMI-CONDUCTEURS NON COUVERTS PAR LA CLASSE - Détails caractérisés par les électrodes ayant une forme particulière
Provided is a compact light-emitting device. This light-emitting device includes: a base body having a base part having a first upper surface, and a frame part having a second upper surface; a semiconductor laser element arranged on the first upper surface and emitting light of a far field pattern of an elliptical shape; and a lid body having an upper surface, a lower surface joined to the second upper surface, and a cylindrical lens surface formed so as to be recessed to the upper surface side on the lower surface side. The semiconductor laser element is arranged in a sealing space surrounded by the base body and the lid body. The lid body further diffuses the fast axis direction of light that is emitted from the semiconductor laser element and incident on the cylindrical lens surface, and causes the light to be emitted from the upper surface.
Disclosed is a light emitting device (1) which comprises: a light emitting element (20); a first covering member (61) that includes, as a base material, a resin that covers the lower surface and/or the side surface of the light emitting element (20); a second covering member (62) that is positioned above the first covering member (61) and composed of an inorganic material; and granular members (70) that are disposed between the first covering member (61) and the second covering member (62). The granular members (70) include inorganic particles (75) that are in contact with both the first covering member (61) and the second covering member (62).
H01L 33/54 - Encapsulations ayant une forme particulière
H01L 33/50 - DISPOSITIFS À SEMI-CONDUCTEURS NON COUVERTS PAR LA CLASSE - Détails caractérisés par les éléments du boîtier des corps semi-conducteurs Éléments de conversion de la longueur d'onde
H01L 33/56 - Matériaux, p.ex. résine époxy ou silicone
H01L 33/60 - DISPOSITIFS À SEMI-CONDUCTEURS NON COUVERTS PAR LA CLASSE - Détails caractérisés par les éléments du boîtier des corps semi-conducteurs Éléments de mise en forme du champ optique Éléments réfléchissants
Provided is a wavelength conversion element in which high-quality crystal part can be utilized by a simple configuration. This wavelength conversion element comprises a substrate having a main surface, and an optical waveguide disposed on the main surface of the substrate, a core of the optical waveguide including a polar member having a second-order nonlinear optical constant and a first non-polar member disposed adjacent to the polar member in a direction parallel to the main surface of the substrate, and one or both side surfaces of the polar member and the first non-polar member being in contact with each other in a cross section orthogonal to the optical axis of the optical waveguide.
