The purpose of the present invention is to provide: a radiation sensitive composition which exhibits sensitivity and CDU at satisfactory levels when next generation techniques are used and which can form a resist film in which developing defects are suppressed; and a pattern formation method. Another purpose of the present invention is to provide a polymer and a compound able to be used in the radiation-sensitive composition. The present invention relates to a radiation-sensitive composition which contains: a polymer (A) including a structural unit (I) represented by general formula (1); and a solvent (B). The polymer (A) includes a radiation-sensitive acid-generating structural unit (IV): and/or a radiation-sensitive acid generator (C) is contained in a component other than the polymer (A). An iodo group is contained in at least one component selected from the group consisting of the polymer (A) and the radiation-sensitive acid generator (C). In formula (1), R1is a hydrogen atom, a fluorine atom, a methyl group or a trifluoromethyl group. L1is a single bond or a divalent linking group. Ar denotes a furan ring, a thiophene ring, or a 9- to 20-membered aromatic heterocyclic ring having a furan ring or a thiophene ring. R2is a hydrogen atom or a monovalent organic group having 1-20 carbon atoms. R3is a halogen atom, a hydroxyl group, a cyano group, a nitro group, an amino group, a thiol group or a monovalent organic group having 1-20 carbon atoms. n is an integer between 0 and 4. If the value of n is 2 or more, multiple R3 moieties may be the same as, or different from, each other.
G03F 7/039 - Composés macromoléculaires photodégradables, p. ex. réserves positives sensibles aux électrons
C07D 307/68 - Atomes de carbone comportant trois liaisons à des hétéro-atomes avec au plus une liaison à un halogène
C07D 307/85 - Atomes de carbone comportant trois liaisons à des hétéro-atomes avec au plus une liaison à un halogène liés en position 2
C07D 333/38 - Atomes de carbone comportant trois liaisons à des hétéro-atomes avec au plus une liaison à un halogène, p. ex. radicaux ester ou nitrile
C07D 333/70 - Atomes de carbone comportant trois liaisons à des hétéro-atomes avec au plus une liaison à un halogène liés en position 2
C07D 407/12 - Composés hétérocycliques contenant plusieurs hétérocycles, au moins un cycle comportant des atomes d'oxygène comme uniques hétéro-atomes du cycle, non prévus par le groupe contenant deux hétérocycles liés par une chaîne contenant des hétéro-atomes comme chaînons
C07D 409/12 - Composés hétérocycliques contenant plusieurs hétérocycles, au moins un cycle comportant des atomes de soufre comme uniques hétéro-atomes du cycle contenant deux hétérocycles liés par une chaîne contenant des hétéro-atomes comme chaînons
C08F 24/00 - Homopolymères ou copolymères de composés contenant un ou plusieurs radicaux aliphatiques non saturés, chaque radical ne contenant qu'une seule liaison double carbone-carbone et l'un au moins étant terminé par un hétérocycle contenant de l'oxygène
C08F 28/00 - Homopolymères ou copolymères de composés contenant un ou plusieurs radicaux aliphatiques non saturés, chaque radical ne contenant qu'une seule liaison double carbone-carbone et l'un au moins étant terminé par une liaison au soufre ou par un hétérocycle contenant du soufre
12 - Véhicules; appareils de locomotion par terre, par air ou par eau; parties de véhicules
17 - Produits en caoutchouc ou en matières plastiques; matières à calfeutrer et à isoler
Produits et services
structural parts for automobiles; vehicle running boards; body panels for vehicles; roof panels for land vehicles semi-processed thermoplastics; plastic wallboards; semi-processed plastics; plastic padding for shipping containers; Thermoplastic foam in the form of cores for use in the manufacture of insulation; Thermoplastic foam in the form of boards for use in the manufacture of insulation; Fiber-reinforced plastic boards being raw material for use in manufacture
3.
METHOD FOR PRODUCING GENE-MODIFIED T CELL POPULATION
Provided is a method of producing a gene-modified T cell population, including mixing a cell population containing T cells with beads each having bound thereto a virus containing a target gene to introduce the target gene into each of the cells of the cell population, wherein the cell population containing the T cells is cultured in a solution containing a CD3 signal activator that is present without being immobilized on a solid phase.
C12N 5/0783 - Cellules TCellules NKProgéniteurs de cellules T ou NK
C12N 5/00 - Cellules non différenciées humaines, animales ou végétales, p. ex. lignées cellulairesTissusLeur culture ou conservationMilieux de culture à cet effet
Provided is a method for manufacturing a semiconductor substrate that has excellent embedding properties, in which a composition for forming a metal-containing film is embedded in a substrate pattern. The method for manufacturing the semiconductor substrate comprises: a step for coating a substrate with a film-forming composition; and a step for performing, on the coating film formed in the film-forming composition coating step, at least one process selected from the group consisting of exposure to radiation and exposure to plasma. The film-forming composition contains a metal compound composed of at least a metal atom and an organic acid, and a solvent.
01 - Produits chimiques destinés à l'industrie, aux sciences ainsi qu'à l'agriculture
Produits et services
Chemical source material for the deposition of thin films
upon semiconductor wafers for the manufacture of
semiconductors; industrial chemicals for use in the
manufacture of semiconductors; industrial chemicals;
adhesives for industrial purposes; chemical preparations for
use in photography; photoresists; unprocessed artificial
resins as raw materials in the form of powders, liquids or
pastes; unprocessed plastics in primary form.
6.
POLYMER, COMPOSITION, CURED PRODUCT, LAMINATED BODY, AND ELECTRONIC COMPONENT
A composition includes a polymer containing a repeating unit represented by Formula (1). —N(R′)—R3—N(R′)— is a structure derived from a dimer diamine that is unsubstituted or substituted by a substituent, R′, R1, and R2 each are independently a hydrogen atom, a halogen atom, a hydrocarbon group that is unsubstituted or substituted by a substituent and has 1 to 20 carbon atoms, a heterocyclic aliphatic group that is unsubstituted or substituted by a substituent and has 3 to 20 carbon atoms, or a heterocyclic aromatic group that is unsubstituted or substituted by a substituent and has 3 to 20 carbon atoms, and —NR1R2 may be a nitrogen-containing heterocyclic group which has 5 to 20 ring-constituting atoms and in which R1 and R2 are bonded to each other.
A composition includes a polymer containing a repeating unit represented by Formula (1). —N(R′)—R3—N(R′)— is a structure derived from a dimer diamine that is unsubstituted or substituted by a substituent, R′, R1, and R2 each are independently a hydrogen atom, a halogen atom, a hydrocarbon group that is unsubstituted or substituted by a substituent and has 1 to 20 carbon atoms, a heterocyclic aliphatic group that is unsubstituted or substituted by a substituent and has 3 to 20 carbon atoms, or a heterocyclic aromatic group that is unsubstituted or substituted by a substituent and has 3 to 20 carbon atoms, and —NR1R2 may be a nitrogen-containing heterocyclic group which has 5 to 20 ring-constituting atoms and in which R1 and R2 are bonded to each other.
C08G 77/452 - Polymères séquencés ou greffés contenant des segments de polysiloxanes contenant des segments de polymères contenant de l'azote
C09D 151/08 - Compositions de revêtement à base de polymères greffés dans lesquels le composant greffé est obtenu par des réactions faisant intervenir uniquement des liaisons non saturées carbone-carboneCompositions de revêtement à base de dérivés de tels polymères greffés sur des composés macromoléculaires obtenus autrement que par des réactions faisant intervenir uniquement des liaisons non saturées carbone-carbone
C09D 183/10 - Copolymères séquencés ou greffés contenant des séquences de polysiloxanes
7.
RESIST UNDERLAYER FILM-FORMING COMPOSITION AND METHOD FOR MANUFACTURING SEMICONDUCTOR SUBSTRATE
Provided are a resist underlayer film-forming composition with which it is possible to form a resist underlayer film having excellent solvent resistance and excellent resist pattern rectangularity, and a method for manufacturing a semiconductor substrate. The resist underlayer film-forming composition contains a polymer having a repeating unit represented by formula (1), and a solvent. (In formula (1), R1represents a hydrogen atom or a substituted or unsubstituted monovalent hydrocarbon group having 1 to 20 carbon atoms. L1represents a 1+n-valent linking group. Ar1represents a monovalent group having an aromatic ring having 6 to 20 ring members. The aromatic ring has at least one halogen atom. n represents an integer of 1 to 3. When n is 2 or more, a plurality of the Ar1s are the same as or different from one another. L1has at least one group (A) selected from the group consisting of a group represented by formula (2-1), a group represented by formula (2-2), a group represented by formula (2-3), a group represented by formula (2-4), a group represented by formula (2-5), a group represented by formula (2-6), a group represented by formula (2-7), and a group represented by formula (2-8).) (In formulae (2-1) to (2-8), R7each independently represent a divalent organic group having 1 to 20 carbon atoms or a single bond. R8, R9, R10, and R13each independently represent a hydrogen atom or a monovalent organic group having 1 to 20 carbon atoms. Cy represents a ring structure constituted together with two carbon atoms in formula (2-2) and having 3 to 20 ring members. R11represents a hydrogen atom, a monovalent organic group having 1 to 20 carbon atoms, or a single bond. R12represents a hydrogen atom or a monovalent organic group having 1 to 20 carbon atoms. ** represents a bond with an atom constituting Cy. Note that if R11is a single bond, R11is combined with **. * represents a bond with an atom constituting L1.)
G03F 7/11 - Matériaux photosensibles caractérisés par des détails de structure, p. ex. supports, couches auxiliaires avec des couches de recouvrement ou des couches intermédiaires, p. ex. couches d'ancrage
C08F 12/32 - Monomères ne contenant qu'un seul radical aliphatique non saturé contenant plusieurs cycles
Provided are a radiation-sensitive composition and a pattern formation method that can exhibit, at the time of pattern formation, a sufficient level of sensitivity, LWR performance, pattern rectangularity, development defect suppression, CDU performance, and pattern circularity. This radiation-sensitive composition includes: a polymer that includes a structural unit (I) represented by formula (1); an onium salt that includes an organic acid anion including a cyclic structure, and an onium cation; and a solvent. (In formula (1), R1is a hydrogen atom or a C1-20 monovalent organic group, L is a single bond or a divalent linking group, R2is a C1-5 substituted or unsubstituted monovalent hydrocarbon group, R3is a C1-10 monovalent organic group, a hydroxy group, a nitro group, a cyano group, an amino group, a halogen atom, or a sulfanyl group, in cases in which there are a plurality of R3s present, the plurality of R3s may be the same as or different from each other, and n is an integer from 0 to 10.)
G03F 7/039 - Composés macromoléculaires photodégradables, p. ex. réserves positives sensibles aux électrons
C08F 20/28 - Esters contenant de l'oxygène en plus de l'oxygène de la fonction carboxyle ne contenant pas de cycles aromatiques dans la partie alcool
C08L 33/14 - Homopolymères ou copolymères des esters d'esters contenant des atomes d'halogène, d'azote, de soufre ou d'oxygène en plus de l'oxygène du radical carboxyle
A radiation-sensitive resin composition includes a polymer, solubility of which in a developer solution is capable of being altered by an action of an acid, and which has a first structural unit represented by the following formula (1); a radiation-sensitive acid generating agent; and an acid diffusion control agent having a monovalent radiation-sensitive onium cation and a monovalent organic acid anion.
A radiation-sensitive resin composition includes a polymer, solubility of which in a developer solution is capable of being altered by an action of an acid, and which has a first structural unit represented by the following formula (1); a radiation-sensitive acid generating agent; and an acid diffusion control agent having a monovalent radiation-sensitive onium cation and a monovalent organic acid anion.
C08F 2/50 - Polymérisation amorcée par énergie ondulatoire ou par rayonnement corpusculaire par la lumière ultraviolette ou visible avec des agents sensibilisants
A radiation-sensitive resin composition includes: a first polymer and a compound. A solubility of the first polymer in a developer solution is capable of being altered by an action of an acid. The first polymer includes: a first structural unit containing a partial structure obtained by substituting a hydrogen atom of a carboxy group, a phenolic hydroxy group, or an amide group with a group represented by the following formula (1); and a second structural unit containing a phenolic hydroxy group. The compound includes: a monovalent radiation-sensitive onium cation containing an aromatic ring obtained by substituting at least one hydrogen atom with a fluorine atom or a fluorine atom-containing group; and a monovalent organic acid anion.
A radiation-sensitive resin composition includes: a first polymer and a compound. A solubility of the first polymer in a developer solution is capable of being altered by an action of an acid. The first polymer includes: a first structural unit containing a partial structure obtained by substituting a hydrogen atom of a carboxy group, a phenolic hydroxy group, or an amide group with a group represented by the following formula (1); and a second structural unit containing a phenolic hydroxy group. The compound includes: a monovalent radiation-sensitive onium cation containing an aromatic ring obtained by substituting at least one hydrogen atom with a fluorine atom or a fluorine atom-containing group; and a monovalent organic acid anion.
G03F 7/039 - Composés macromoléculaires photodégradables, p. ex. réserves positives sensibles aux électrons
C08F 212/14 - Monomères contenant un seul radical aliphatique non saturé contenant un cycle substitué par des hétéro-atomes ou des groupes contenant des hétéro-atomes
C08F 220/18 - Esters des alcools ou des phénols monohydriques des phénols ou des alcools contenant plusieurs atomes de carbone avec l'acide acrylique ou l'acide méthacrylique
G03F 7/00 - Production par voie photomécanique, p. ex. photolithographique, de surfaces texturées, p. ex. surfaces impriméesMatériaux à cet effet, p. ex. comportant des photoréservesAppareillages spécialement adaptés à cet effet
11.
SEMICONDUCTOR SUBSTRATE MANUFACTURING METHOD, AND RESIST BASE FILM FORMING COMPOSITION
A method for manufacturing a semiconductor substrate includes: applying a composition for forming a resist underlayer film directly or indirectly to a substrate to form a resist underlayer film; applying a composition for forming a resist film to the resist underlayer film to form a resist film; exposing the resist film to radiation; and developing at least the exposed resist film. The composition for forming a resist underlayer film includes a polymer and a solvent. The polymer includes a repeating unit (1) which includes an organic sulfonic acid anion moiety and an onium cation moiety.
C08G 61/12 - Composés macromoléculaires contenant d'autres atomes que le carbone dans la chaîne principale de la macromolécule
G03F 7/00 - Production par voie photomécanique, p. ex. photolithographique, de surfaces texturées, p. ex. surfaces impriméesMatériaux à cet effet, p. ex. comportant des photoréservesAppareillages spécialement adaptés à cet effet
Provided are: thermoplastic polymer foamed particles in which it is possible to identify the foamed particles themselves; and a thermoplastic polymer foamed particle molded body that, by being formed from the identifiable thermoplastic polymer foamed particles, can be identified without ruining the aesthetics thereof. Further provided is an identification method for the thermoplastic polymer foamed particles and/or the thermoplastic polymer foamed particle molded body. Thermoplastic polymer foamed particles (100) exhibit a light emission reaction derived from a light-emitting rare-earth element (10) through irradiation with electromagnetic waves. This thermoplastic polymer foamed particle molded body is formed through in-mold molding using the thermoplastic polymer foamed particles (100) and thereby exhibits a light emission reaction. This identification method for the thermoplastic polymer foamed particles or the thermoplastic polymer foamed particle molded body comprises: i) an electromagnetic wave irradiation step for irradiating the surfaces of the thermoplastic polymer foamed particles or the thermoplastic polymer foamed particle molded body with electromagnetic waves; and ii) a detection step for detecting, by using a detection device, a light emission reaction that is derived from a light-emitting rare-earth element and that occurs through the irradiating with the electromagnetic waves to obtain a light emission spectrum. A first method of the identification method further comprises iii-1) an identification step for observing the contrast between the light emission spectrum and a blank spectrum in which the light emission reaction derived from the light-emitting rare-earth element is not exhibited. A second method of the identification method further comprises iii-2) an identification step for comparing the light emission spectrum with a preset standard light emission spectrum in which the light emission reaction derived from the light-emitting rare-earth element is exhibited.
C08J 9/18 - Fabrication de particules expansibles par imprégnation des particules du polymère avec l'agent de gonflage
B29C 44/00 - Moulage par pression interne engendrée dans la matière, p. ex. par gonflage ou par moussage
B29C 44/44 - Alimentation en matière à mouler dans une cavité de moulage fermée, c.-à-d. pour la fabrication d'objets de longueur définie sous forme de particules ou de grains expansibles
13.
RADIATION-SENSITIVE COMPOSITION, PATTERN FORMATION METHOD, AND ONIUM SALT COMPOUND
The present invention provides a radiation-sensitive composition with which it is possible to from a resist film capable of exhibiting sensitivity, LWR performance, pattern rectangularity, CDU, pattern circularity, MEEF, and DOF at sufficient levels, and a pattern formation method. The radiation-sensitive composition contains: a first onium salt compound represented by formula (1); at least one type of second onium salt compound selected from the group consisting of a carboxylate compound represented by formula (2) and a carboxylic acid intramolecular salt compound represented by formula (3); a polymer including a structure unit having an acid dissociable group; and a solvent. (In formula (1), A is a (1+n)-valent organic group having 1 to 40 carbon atoms. Rf1and Rf2are each independently a hydrogen atom, a monovalent organic group, a fluorine atom, or a monovalent fluorinated hydrocarbon group. If a plurality of Rf1s and a plurality of Rf2s are present, the plurality of Rf1s and the plurality of Rf211 +is a radiation-sensitive onium cation.) (In formula (2), R122 +is an organic cation.) (In formula (3), R233 + is a monovalent organic onium cation.)
This radiation-sensitive composition contains: a polymer whose solubility with respect to a developer changes due to the action of an acid; and a compound having an anion and a radiation-sensitive onium cation, wherein the polymer has a structural unit including a group that generates sulfonic acid due to the action of radiation, the polymer includes an iodine group, and at least one of the anion and the radiation-sensitive onium cation includes an acid-dissociable group.
Provided are: a resin composition comprising a compound (A) that comprises at least one compound selected from the group consisting of a compound (A1) having two or more partial structures represented by formula (1) and a compound (A2) represented by formula (2) and a polymer (B) having a group crosslinkable with the compound (A) and an aromatic ring; a cured article; a prepreg; a copper-clad laminate board; an interlayer insulation film; and a compound. The explanation for each substituent in the formulae is as described in the description.
C08G 65/40 - Composés macromoléculaires obtenus par des réactions créant une liaison éther dans la chaîne principale de la macromolécule à partir de composés hydroxylés ou de leurs dérivés métalliques dérivés des phénols à partir des phénols et d'autres composés
C08J 5/04 - Renforcement des composés macromoléculaires avec des matériaux fibreux en vrac ou en nappes
C08L 15/00 - Compositions contenant des dérivés du caoutchouc
C08L 71/10 - Polyéthers dérivés de composés hydroxylés ou de leurs dérivés métalliques de phénols
H05K 1/03 - Emploi de matériaux pour réaliser le substrat
16.
RADIATION-SENSITIVE COMPOSITION, PATTERN FORMATION METHOD, AND ONIUM SALT COMPOUND
Provided are a radiation-sensitive composition, a pattern formation method, and an onium salt compound that make it possible to achieve sufficient sensitivity, CDU performance, pattern circularity, development defect suppression, depth of focus, LWR performance, pattern rectangularity, and exposure latitude when a pattern is formed. A radiation-sensitive composition according to the present invention includes: an onium salt compound represented by formula (1); a polymer that includes a structural unit (I) represented by formula (2); and a solvent. (In formula (1), A is a C3–40 (1+n)-valent organic group that includes a cyclic structure. When A includes a straight-chain alkanediyl group, the number of carbons in the straight-chain alkanediyl group is 1 or 2. A does not include a cyclohexylcarbonyloxy structure. Rf1and Rf2are each independently a hydrogen atom, a C1–20 monovalent organic group, a fluorine atom, or a monovalent fluorinated hydrocarbon group. When there are multiple Rf1and Rf2, the Rf1and Rf2are each the same or different. At least one of Rf1and Rf2is a fluorine atom or a monovalent fluorinated hydrocarbon group. m1 is an integer from 1 to 4, inclusive. m2 is 0 or 1. n is an integer from 1 to 3, inclusive. Z+is a monovalent radiation-sensitive onium cation. The number of fluorine atoms in Z+is no more than 8.) (In formula (2), RAis a hydrogen atom, a fluorine atom, a methyl group, or a trifluoromethyl group. L is a single bond or a divalent linking group. W is a monocyclic lactone structure, a monocyclic carbonate structure, a monocyclic sultone structure, a monocyclic sulfone structure, or a monocyclic ether structure. R11is a C1–10 monovalent organic group, a cyano group, a nitro group, a hydroxy group, or an amino group. When there are multiple R11, the R11 are each the same or different. p is an integer from 0 to 3, inclusive. q is 0 or 1.)
Provided is a radiation-sensitive composition and a pattern formation method with which sensitivity, LWR performance, pattern rectangularity, CDU performance, pattern circularity, MEEF, and exposure margin can be exhibited at a sufficient level when a pattern is formed. This radiation-sensitive resin composition comprises: a first onium salt compound represented by formula (1), a second onium salt compound represented by formula (2), a polymer containing structural units having an acid-dissociable group, and a solvent. (In formula (1), A is a C1–C40 (1+n)-valent organic group. Rf1and Rf2are each independently a hydrogen atom, a C1–C20 monovalent organic group, a fluorine atom, or a monovalent fluorinated hydrocarbon group. When both Rf1and Rf2are present in pluralities, the plurality of Rf1and Rf2are the same as or different from each other. At least one of Rf1and Rf2is a fluorine atom or a monovalent fluorinated hydrocarbon group. R1and R2are each independently a hydrogen atom, a fluorine atom, or a C1–C20 monovalent organic group. When both R1and R2are present in pluralities, the plurality of R1and R211 +11 +.) (In formula (2), R433 −22 + is a monovalent organic cation.)
The present invention addresses the problem of providing: a radiation-sensitive composition and a pattern formation method with which it is possible to achieve sufficient levels of sensitivity, development contrast, development residue suppression property, and limit resolution property during formation of a pattern; and a polymer which can be used suitably for the radiation-sensitive composition. The radiation-sensitive composition contains: a polymer (A) containing a structural unit that has an acid-dissociable group, a structural unit that has a first organic acid anion (b1) and a first onium cation (c1) and includes a first acid-generating structure capable of generating, when exposed, an acid that induces the dissociation of the acid-dissociable group, and a structural unit that has a second organic acid anion (b2) and a second onium cation (c2) and includes a second acid-generating structure capable of generating, when exposed, an acid that does not induce the dissociation of the acid-dissociable group; and a solvent (B). The polymer (A) includes a partial structure represented by formula (i). (In formula (i), Ar represents a 5- to 20-membered aromatic ring having a valency of (m1 + m2 + m3 +1); X1represents a hydroxy group, a carboxy group, a sulfonic acid group, or a mercapto group, wherein, when there are a plurality of X1's, the plurality of X1's are the same as or different from each other; R1represents an acid-dissociable group or a non-acid-dissociable group, wherein, when there is one R1, the R1represents an acid-dissociable group, and when there are a plurality of R1's, at least one of the plurality of R1's represents an acid-dissociable group, and when there are a plurality of R1's, the plurality of R1's are the same as or different from each other; R2represents a halogen atom, a cyano group, a nitro group, or a monovalent organic group (excluding -COOR1), wherein, when there are a plurality of R2's, the plurality of R2's are the same as or different from each other; m1 represents an integer of 1-5, m2 represents an integer of 0-5, and m3 represents an integer of 0-6, wherein 2 ≤ m1 + m2; and "*" represents a bond to another structure in the polymer (A).)
C08F 212/14 - Monomères contenant un seul radical aliphatique non saturé contenant un cycle substitué par des hétéro-atomes ou des groupes contenant des hétéro-atomes
Provided are a radiation-sensitive composition and pattern formation method that can exhibit satisfactory levels of sensitivity, CDU, and development defect suppression during pattern formation; and a polymer that can be advantageously used in said radiation-sensitive composition. This radiation-sensitive composition contains: a polymer (A) comprising a structural unit (I) having an acid-dissociable group, a structural unit (II) that has a first organic acid anion (b1) and a first onium cation (c1) and that contains a first acid-generating structure that upon exposure generates an acid that induces dissociation of the acid-dissociable group, and a structural unit (III) that has a second organic acid anion (b2) and a second onium cation (c2) and that contains a second acid-generating structure that upon exposure generates an acid that does not induce dissociation of the acid-dissociable group; and a solvent (B). The polymer (A) has at least one alcoholic hydroxyl group, and the second onium cation (c2) is a radiation-sensitive onium cation.
C08F 212/14 - Monomères contenant un seul radical aliphatique non saturé contenant un cycle substitué par des hétéro-atomes ou des groupes contenant des hétéro-atomes
C08F 220/18 - Esters des alcools ou des phénols monohydriques des phénols ou des alcools contenant plusieurs atomes de carbone avec l'acide acrylique ou l'acide méthacrylique
Provided are an organic resin material that makes it possible to uniformly fix an electroconductive carbon material over the entirety of an electroconductive film formation region, a method for manufacturing an electroconductive film using the organic resin material, and a touch panel and a display panel each comprising an electroconductive film manufactured by means of the manufacturing method. The method comprises: a step (A) for applying an organic resin material containing a polymer obtained by reacting an aliphatic tetracarboxylic acid dianhydride with an aliphatic diamine onto a base material to form an organic resin layer; a step (B) for applying a dispersion liquid containing a dispersant and carbon nanotubes onto the organic resin layer after the step (A) to form a coating film; a step (C) for drying the coating film after the step (B); and a step (D) for depositing a dispersant extraction liquid after the step (C), thereby removing the dispersant from the coating film.
H01B 13/00 - Appareils ou procédés spécialement adaptés à la fabrication de conducteurs ou câbles
B05D 1/36 - Applications successives de liquides ou d'autres matériaux fluides, p. ex. sans traitement intermédiaire
B05D 3/10 - Traitement préalable des surfaces sur lesquelles des liquides ou d'autres matériaux fluides doivent être appliquésTraitement ultérieur des revêtements appliqués, p. ex. traitement intermédiaire d'un revêtement déjà appliqué, pour préparer les applications ultérieures de liquides ou d'autres matériaux fluides par d'autres moyens chimiques
B05D 7/24 - Procédés, autres que le flocage, spécialement adaptés pour appliquer des liquides ou d'autres matériaux fluides, à des surfaces particulières, ou pour appliquer des liquides ou d'autres matériaux fluides particuliers pour appliquer des liquides ou d'autres matériaux fluides particuliers
21.
SUBSTRATE FOR SEMICONDUCTOR PRODUCTION, METHOD FOR PRODUCING SUBSTRATE FOR SEMICONDUCTOR PRODUCTION, AND METHOD FOR PRODUCING SEMICONDUCTOR SUBSTRATE
The present invention provides: a substrate for semiconductor production which is excellent in suppression of collapse of a resist pattern; a method for producing a substrate for semiconductor production; and a method for producing a semiconductor substrate. Provided is a substrate for semiconductor production comprising a substrate that has a thin film, wherein the thin film has a group derived from a compound represented by formula (1). (In formula (1), R1 is an C1-40 n-valent organic group. n is an integer of 1-4.)
G03F 7/11 - Matériaux photosensibles caractérisés par des détails de structure, p. ex. supports, couches auxiliaires avec des couches de recouvrement ou des couches intermédiaires, p. ex. couches d'ancrage
A radiation-sensitive resin composition includes: an onium salt compound represented by formula (1), a resin including a structural unit having an acid-dissociable group, and an alcohol-based solvent having a boiling point of 90° C. or higher. R1 is a substituted or unsubstituted monovalent hydrocarbon group or a group including a divalent hetero atom-containing group between two adjacent carbon atoms of the hydrocarbon group; R2 and R3 are each independently a hydrogen atom or a monovalent hydrocarbon group, one of Rf11 and Rf12 is a fluorine atom, and the other is a fluorine atom or a monovalent fluorinated hydrocarbon group, m1 is an integer of 1 to 3; m2 is an integer of 0 to 8; and Z1+ represents a monovalent radiation-sensitive onium cation.
A radiation-sensitive resin composition includes: an onium salt compound represented by formula (1), a resin including a structural unit having an acid-dissociable group, and an alcohol-based solvent having a boiling point of 90° C. or higher. R1 is a substituted or unsubstituted monovalent hydrocarbon group or a group including a divalent hetero atom-containing group between two adjacent carbon atoms of the hydrocarbon group; R2 and R3 are each independently a hydrogen atom or a monovalent hydrocarbon group, one of Rf11 and Rf12 is a fluorine atom, and the other is a fluorine atom or a monovalent fluorinated hydrocarbon group, m1 is an integer of 1 to 3; m2 is an integer of 0 to 8; and Z1+ represents a monovalent radiation-sensitive onium cation.
A method for manufacturing a surface-treated substrate according to the present invention includes a step for applying a composition to the surface of a substrate including a first region and a second region different in material from the first region to selectively modify the surface of the substrate. The composition contains: compound (A) that is at least one compound selected from the group consisting of a compound represented by formula (1), a compound represented by formula (2), and a compound represented by formula (3); and 1 mass% or more of water with respect to the total amount of the composition. R1, R4, and R8 are each independently a monovalent chain group having 9 or more carbon atoms.
A radiation-sensitive resin composition includes: a first onium salt compound represented by formula (1); a second onium salt compound represented by formula (2); a resin including a structural unit having an acid-dissociable group; and a solvent. R1 is a substituted or unsubstituted monovalent hydrocarbon group or the like; R2 and R3 are each independently a hydrogen atom or a monovalent hydrocarbon group; one of Rf11 and Rf12 is a fluorine atom, and the other is a fluorine atom or a monovalent fluorinated hydrocarbon group; and Z1+ represents a monovalent radiation-sensitive onium cation. R4 is a monovalent organic group including a cyclic structure; Rf21 and Rf22 each independently represent a fluorine atom or a monovalent fluorinated hydrocarbon group; and Z2+ represents a monovalent radiation-sensitive onium cation.
A radiation-sensitive resin composition includes: a first onium salt compound represented by formula (1); a second onium salt compound represented by formula (2); a resin including a structural unit having an acid-dissociable group; and a solvent. R1 is a substituted or unsubstituted monovalent hydrocarbon group or the like; R2 and R3 are each independently a hydrogen atom or a monovalent hydrocarbon group; one of Rf11 and Rf12 is a fluorine atom, and the other is a fluorine atom or a monovalent fluorinated hydrocarbon group; and Z1+ represents a monovalent radiation-sensitive onium cation. R4 is a monovalent organic group including a cyclic structure; Rf21 and Rf22 each independently represent a fluorine atom or a monovalent fluorinated hydrocarbon group; and Z2+ represents a monovalent radiation-sensitive onium cation.
A radiation-sensitive resin composition includes: a first onium salt compound represented by formula (1); a second onium salt compound represented by formula (2); a resin including an acid-dissociable group; and a solvent. R1 is a substituted or unsubstituted monovalent hydrocarbon group or the like; R2 and R3 are each independently a hydrogen atom, a fluorine atom, or the like; and Z+ represents a monovalent radiation-sensitive onium cation. R4 is a monovalent organic group; one of Rf21 and Rf22 is a fluorine atom, and the other is a fluorine atom or a monovalent fluorinated hydrocarbon group; Ar is a monovalent organic group including an aromatic ring; R5, R6, R7, and R8 each independently represent a hydrogen atom, a hydroxy group, a halogen atom, or a monovalent organic group; and X is a single bond or a divalent hetero atom-containing group.
A radiation-sensitive resin composition includes: a first onium salt compound represented by formula (1); a second onium salt compound represented by formula (2); a resin including an acid-dissociable group; and a solvent. R1 is a substituted or unsubstituted monovalent hydrocarbon group or the like; R2 and R3 are each independently a hydrogen atom, a fluorine atom, or the like; and Z+ represents a monovalent radiation-sensitive onium cation. R4 is a monovalent organic group; one of Rf21 and Rf22 is a fluorine atom, and the other is a fluorine atom or a monovalent fluorinated hydrocarbon group; Ar is a monovalent organic group including an aromatic ring; R5, R6, R7, and R8 each independently represent a hydrogen atom, a hydroxy group, a halogen atom, or a monovalent organic group; and X is a single bond or a divalent hetero atom-containing group.
A radiation-sensitive resin composition includes: a first onium salt compound represented by formula (1); a second onium salt compound represented by formula (2); a resin including a structural unit having an acid-dissociable group; and a solvent. R1 is a substituted or unsubstituted monovalent hydrocarbon group or a group including a divalent hetero atom-containing group between two adjacent carbon atoms of the hydrocarbon group; R2 and R3 are each independently a hydrogen atom, a fluorine atom, or the like; and one of Rf11 and Rf12 is a fluorine atom, and the other is a hydrogen atom, a fluorine atom, or a monovalent fluorinated hydrocarbon group. R4 is a monovalent organic group in which neither a fluorine atom nor a fluorinated hydrocarbon group is bonded to an atom adjacent to the sulfur atom.
A radiation-sensitive resin composition includes: a first onium salt compound represented by formula (1); a second onium salt compound represented by formula (2); a resin including a structural unit having an acid-dissociable group; and a solvent. R1 is a substituted or unsubstituted monovalent hydrocarbon group or a group including a divalent hetero atom-containing group between two adjacent carbon atoms of the hydrocarbon group; R2 and R3 are each independently a hydrogen atom, a fluorine atom, or the like; and one of Rf11 and Rf12 is a fluorine atom, and the other is a hydrogen atom, a fluorine atom, or a monovalent fluorinated hydrocarbon group. R4 is a monovalent organic group in which neither a fluorine atom nor a fluorinated hydrocarbon group is bonded to an atom adjacent to the sulfur atom.
C08F 220/18 - Esters des alcools ou des phénols monohydriques des phénols ou des alcools contenant plusieurs atomes de carbone avec l'acide acrylique ou l'acide méthacrylique
C08F 220/28 - Esters contenant de l'oxygène en plus de l'oxygène de la fonction carboxyle ne contenant pas de cycles aromatiques dans la partie alcool
C08F 220/36 - Esters contenant de l'azote contenant de l'oxygène en plus de l'oxygène de la fonction carboxyle
G03F 7/00 - Production par voie photomécanique, p. ex. photolithographique, de surfaces texturées, p. ex. surfaces impriméesMatériaux à cet effet, p. ex. comportant des photoréservesAppareillages spécialement adaptés à cet effet
G03F 7/038 - Composés macromoléculaires rendus insolubles ou sélectivement mouillables
G03F 7/039 - Composés macromoléculaires photodégradables, p. ex. réserves positives sensibles aux électrons
27.
PRODUCTION METHOD FOR SEMICONDUCTOR SUBSTRATE AND COMPOSITION FOR RESIST UNDERLAYER FORMATION
The present invention provides: a production method for a semiconductor substrate that makes it possible to form a resist underlayer having excellent pattern rectangularity; and a composition for resist underlayer formation. Provided is a production method for a semiconductor substrate, said method comprising: a step for applying a composition for resist underlayer formation directly or indirectly onto a substrate; a step for applying a composition resist film formation directly or indirectly onto a resist underlayer formed in the step for applying the composition for resist underlayer formation; a step for exposing a resist film formed in the step for applying the composition resist film formation; and a step for developing at least the exposed resist film. The composition for resist underlayer formation contains a compound and a solvent. The compound comprises -ORA, where RAis a hydrogen atom, a C1-10 monovalent heteroatom-containing group, or a C1-10 monovalent organic group (excluding C1-10 monovalent heteroatom-containing groups). Among the structures constituting RA, when the proportion of hydrogen atoms is represented as x, the proportion of the C1-10 monovalent heteroatom-containing group is represented as y, and the proportion of the C1-10 monovalent organic group is represented as z, in the entirety of the compound, x+y+z=100, and the relations 20≤x≤95 and 5≤y≤80 are satisfied. The compound is a polymer which has a repeating unit represented by formula (1), an aromatic-ring-containing compound which has a molecular weight of 750-3,000 and which comprises -ORA, or a combination of these. (In formula (1), Ar1is a divalent group having a 5- to 40-membered aromatic ring. R0is a hydrogen atom or a C1-40 monovalent organic group. R1is a C1-40 monovalent organic group. At least one selected from the group consisting of Ar1, R0, and R1has -ORA.)
G03F 7/11 - Matériaux photosensibles caractérisés par des détails de structure, p. ex. supports, couches auxiliaires avec des couches de recouvrement ou des couches intermédiaires, p. ex. couches d'ancrage
C08G 61/10 - Composés macromoléculaires contenant uniquement des atomes de carbone dans la chaîne principale de la molécule, p. ex. polyxylylènes uniquement des atomes de carbone aromatiques, p. ex. polyphénylènes
28.
PHOTOSENSITIVE COMPOSITION, CURED PRODUCT, METHOD FOR PRODUCING SAME, LIQUID CRYSTAL DEVICE, SEMICONDUCTOR DEVICE, POLYMER, AND COMPOUND
This photosensitive composition contains: a polymer derived from a monomer having a C1-C3 halogenated alkyl group containing at least one hydrogen atom, and including a structural unit (a1) having a hydroxyl group; and a photosensitive compound.
01 - Produits chimiques destinés à l'industrie, aux sciences ainsi qu'à l'agriculture
Produits et services
Chemicals for use in industry; industrial chemicals for use
in the manufacture of semiconductors; photoresists; chemical
compositions for developing photographs; chemical
preparations for use in photography; photographic
sensitizers; photographic developers.
30.
CELL ADHESIVE PARTICLE AND PARTICLE PRODUCTION METHOD
The present invention provides particles having excellent cell adhesiveness. Cell adhesive particles according to the present invention each contain, in a molecule, a structural unit having at least one selected from groups represented by formula (1) and groups represented by formula (2). [In formula (1), R1represents an alkanediyl group having 2-10 carbon atoms, R2and R3each independently represent a hydrogen atom or an alkyl group having 1-10 carbon atoms, and * represents a binding site.] [In formula (2), R4represents an alkanediyl group having 2-10 carbon atoms, R5-R7each independently represent a hydrogen atom or an alkyl group having 1-10 carbon atoms, X- represents a counter anion, and * represents a binding site.]
Provided are a radiation-sensitive composition and a pattern formation method capable of exhibiting, at sufficient levels, sensitivity, development contrast, development defect suppression property, and limit resolution when forming patterns. This radiation-sensitive composition contains a polymer and a solvent. The polymer includes: a structural unit (I) that has an iodo group and that also has an acid-dissociable group; a structural unit (II) that has a first organic acid anion and a first onium cation and that includes a first acid-generating structure for generating, through exposure to light, an acid that induces dissociation of the acid-dissociable group; and a structural unit (III) that has a second organic acid anion and a second onium cation, and that includes a second acid-generating structure for generating, through exposure to light, an acid that does not induce dissociation of the acid-dissociable group.
01 - Produits chimiques destinés à l'industrie, aux sciences ainsi qu'à l'agriculture
Produits et services
Chemicals for use in industry; industrial chemicals for use
in the manufacture of semiconductors; photoresists; chemical
compositions for developing photographs; chemical
preparations for use in photography; photographic
sensitizers; photographic developers.
33.
SEMICONDUCTOR SUBSTRATE PRODUCTION METHOD AND FILM-FORMING COMPOSITION
Provided are: a semiconductor substrate production method that uses a metal-containing resist underlayer film capable of imparting favorable rectangularity to a metal resist pattern; and an underlayer film-forming composition for a first metal-containing resist. This semiconductor substrate production method includes a step for coating a substrate with a film-forming composition. The film-forming composition contains a solvent and a metal compound comprising at least a metal atom and an organic acid. The organic acid is a compound represented by formula (1). (In formula (1), R1is a hydroxy group, a nitro group, a halogen atom or a C1-20 monovalent organic group (excluding the structure corresponding to -L1-COOH and the structure corresponding to X in the formula). Ar1is a C3-30 r+s+t-valent aromatic ring structure. X is a crosslinkable group. L1represents a single bond or a divalent linking group. t is an integer of 0-2. When t is 2, the two R1are the same or different. r is an integer of 1-4. When r is 2 or more, the plurality of X are the same or different. s is an integer of 1-4. When s is 2 or more, the plurality of L1 are the same or different.)
C09D 7/63 - Adjuvants non macromoléculaires organiques
C09D 149/00 - Compositions de revêtement à base d'homopolymères ou de copolymères de composés possédant une ou plusieurs liaisons triples carbone-carboneCompositions de revêtement à base de dérivés de tels polymères
C09D 201/00 - Compositions de revêtement à base de composés macromoléculaires non spécifiés
G03F 7/11 - Matériaux photosensibles caractérisés par des détails de structure, p. ex. supports, couches auxiliaires avec des couches de recouvrement ou des couches intermédiaires, p. ex. couches d'ancrage
H01L 21/3065 - Gravure par plasmaGravure au moyen d'ions réactifs
01 - Produits chimiques destinés à l'industrie, aux sciences ainsi qu'à l'agriculture
Produits et services
Chemical source material for the deposition of thin films upon semiconductor wafers for the manufacture of semiconductors; industrial chemicals for use in the manufacture of semiconductors; industrial chemicals; adhesives for industrial purposes; chemical preparations for use in photography; photoresists; unprocessed artificial resins as raw materials in the form of powders, liquids or pastes; unprocessed plastics in primary form.
35.
PHOTOSENSITIVE RESIN COMPOSITION FOR PRODUCING PLATED MOLDED ARTICLE, METHOD FOR PRODUCING RESIST PATTERN FILM, AND METHOD FOR PRODUCING PLATED MOLDED ARTICLE
An embodiment of the present invention relates to a photosensitive resin composition for producing a plated molded article, a method for producing a resist pattern film, and a method for producing a plated molded article. Said composition contains: a (meth)acrylic polymer (A1) having an acid dissociable group; a photoacid generator (B); at least one compound (C) selected from the group consisting of an organic carboxylic acid compound (C1) having a pKa of 4.5 or less, an organic carboxylic acid anhydride (C2) having a pKa of 4.5 or less, and a polyhydric phenol compound (C3) having a CLogP of 4.5 or less; and a solvent (G).
One embodiment of the present invention relates to a photosensitive resin composition, a method for producing a resist pattern film, or a method for producing a plated shaped article. The photosensitive resin composition contains a polymer (A1) that is selected from among an alkali-soluble polymer and a polymer having an acid dissociable group, a polymer (A2) that is selected from among an alkali-soluble polymer and a polymer having an acid dissociable group, a photoacid generator (B), and a solvent (C). The glass transition temperature (Tg) of the polymer (A2) is -45°C to 25°C, and the glass transition temperature (Tg) of the polymer (A1) is higher than the Tg of the polymer (A2) by 55°C to 120°C.
This radiation-sensitive composition comprises a polymer which contains, in the same molecule, a first structural unit having an acid-dissociable group, a second structural unit having a radiation-sensitive onium cation and a sulfonic acid anion, and a third structural unit having a radiation-sensitive onium cation and a carboxylic acid anion, and in which the content ratio of the first structural unit is at least 55 mol% with respect to all the structural units.
This radiation-sensitive composition contains a polymer containing: a first structural unit having a radiation-sensitive onium cation and a sulfonic acid anion; a second structural unit having a radiation-sensitive onium cation and a carboxylic acid anion; and a third structural unit represented by formula (1). In formula (1), R1represents a hydrogen atom, a fluorine atom, a methyl group, or a trifluoromethyl group. B1is a single bond or a divalent hydrocarbon group. L1is a divalent organic group. R2 is an acid-decomposable group.
Provided are a method for manufacturing a semiconductor substrate with which it is possible to form an underlayer film for a metal-containing resist capable of achieving excellent rectangularity in a resist pattern, and a composition for forming an underlayer film for a metal-containing resist. This method for manufacturing a semiconductor substrate comprises: a step for directly or indirectly applying, to a substrate, a composition for forming an underlayer film for a metal-containing resist; a step for forming a metal-containing resist film on an underlayer film for a metal-containing resist, the underlayer film being formed by means of the step for applying the composition for forming an underlayer film for a metal-containing resist; a step for exposing the metal-containing resist film to extreme ultraviolet rays; and a step for developing at least the exposed metal-containing resist film. The composition for forming an underlayer film for a metal-containing resist contains a solvent and a compound having a structural unit (α) represented by formula (1-1). (In formula (1-1), a is an integer of 1-3. R1is a C1-20 monovalent organic group, a hydroxy group, or a halogen atom. b is an integer of 0-2. When b is 2, the two R1 are the same as each other or are different from one another. However, a + b is 3 or less.)
G03F 7/11 - Matériaux photosensibles caractérisés par des détails de structure, p. ex. supports, couches auxiliaires avec des couches de recouvrement ou des couches intermédiaires, p. ex. couches d'ancrage
C08G 77/12 - Polysiloxanes contenant du silicium lié à l'hydrogène
C08G 77/24 - Polysiloxanes contenant du silicium lié à des groupes organiques contenant des atomes autres que le carbone, l'hydrogène et l'oxygène groupes contenant des halogènes
H01L 21/027 - Fabrication de masques sur des corps semi-conducteurs pour traitement photolithographique ultérieur, non prévue dans le groupe ou
40.
RADIATION-SENSITIVE COMPOSITION, RESIST PATTERN FORMATION METHOD, AND POLYMER
This radiation-sensitive composition contains a polymer containing: a first structural unit having a radiation-sensitive onium cation and a sulfonic acid anion; a second structural unit having a radiation-sensitive onium cation and a carboxylic acid anion; and a third structural unit represented by formula (1). In formula (1), Ar1is a group obtained by removing (s+t+1) hydrogen atoms from an aromatic hydrocarbon ring. s is an integer of 1 or higher. t is an integer of 1 or higher. R2is a hydroxy group, an alkyl group, an alkoxy group or -OX1. X1 is an acid-decomposable group.
Provided are: a radiation-sensitive composition capable of exhibiting excellent sensitivity, CDU performance, DOF performance, pattern circularity, LWR performance, pattern rectangularity, and development defect suppression when forming a pattern; a pattern formation method; and an onium salt. This radiation-sensitive composition contains an onium salt represented by formula (1) (hereinafter, also referred to as an "onium salt (1)"), a polymer containing a structural unit (I) having an acid-dissociable group, and a solvent. (In formula (1), Ar1is an (a1 + b1 +1)-valent aromatic ring. Ar2is an (a2 + b2 +1)-valent aromatic ring. X1and X2are each independently a monovalent organic group having 1-20 carbon atoms, a cyano group, a nitro group, or a halogen atom. When multiple X1and multiple X2are present, the multiple X1and the multiple X2are each identical to or different from each other. Y1is a monovalent organic group having 4-20 carbon atoms and bonded via Ar122-, or a monovalent perfluoroalkyl group having 1-20 carbon atoms. When multiple Y1are present, the multiple Y1are identical to or different from each other. Y2is a monovalent organic group having 4-20 carbon atoms and bonded via Ar222-, or a monovalent perfluoroalkyl group having 1-20 carbon atoms. When multiple Y2are present, the multiple Y2are identical to or different from each other. L is a single bond or a divalent linking group having 1-5 carbon atoms. a1, a2, b1, and b2 are each independently an integer of 0-5. When the aromatic ring of Ar2 is a benzene ring, b1 + b2 ≥ 1.)
C07C 65/21 - Composés comportant des groupes carboxyle liés à des atomes de carbone de cycles aromatiques à six chaînons et contenant l'un des groupes OH, O-métal, —CHO, cétone, éther, des groupes , des groupes ou des groupes contenant des groupes éther, des groupes , des groupes ou des groupes
C07C 255/56 - Nitriles d'acides carboxyliques ayant des groupes cyano liés à des atomes de carbone de cycles aromatiques à six chaînons d'un squelette carboné contenant des groupes cyano et des atomes d'oxygène, liés par des liaisons doubles, liés au squelette carboné
C07C 317/14 - SulfonesSulfoxydes ayant des groupes sulfone ou sulfoxyde liés à des atomes de carbone de cycles aromatiques à six chaînons
C07D 207/34 - Composés hétérocycliques contenant des cycles à cinq chaînons, non condensés avec d'autres cycles, ne comportant qu'un atome d'azote comme unique hétéro-atome du cycle avec uniquement des atomes d'hydrogène ou de carbone liés directement à l'atome d'azote du cycle comportant deux liaisons doubles entre chaînons cycliques ou entre chaînons cycliques et chaînons non cycliques avec des hétéro-atomes ou avec des atomes de carbone comportant trois liaisons à des hétéro-atomes, avec au plus une liaison à un halogène, p. ex. radicaux ester ou nitrile, liés directement aux atomes de carbone du cycle
C07D 209/30 - IndolesIndoles hydrogénés avec des hétéro-atomes ou avec des atomes de carbone comportant trois liaisons à des hétéro-atomes, avec au plus une liaison à un halogène, liés directement aux atomes de carbone de l'hétérocycle
C07D 209/88 - CarbazolesCarbazoles hydrogénés avec des hétéro-atomes ou des atomes de carbone comportant trois liaisons à des hétéro-atomes avec au plus une liaison à un halogène, p. ex. radicaux ester ou nitrile, liés directement aux atomes de carbone du système cyclique
C07D 307/56 - Composés hétérocycliques contenant des cycles à cinq chaînons comportant un atome d'oxygène comme unique hétéro-atome du cycle non condensés avec d'autres cycles comportant deux ou trois liaisons doubles entre chaînons cycliques ou entre chaînons cycliques et chaînons non cycliques avec des hétéro-atomes ou avec des atomes de carbone comportant trois liaisons à des hétéro-atomes, avec au plus une liaison à un halogène, p. ex. radicaux ester ou nitrile, liés directement aux atomes de carbone du cycle
C07D 307/79 - Benzo [b] furannesBenzo [b] furannes hydrogénés avec uniquement des atomes d'hydrogène, des radicaux hydrocarbonés ou des radicaux hydrocarbonés substitués, liés directement aux atomes de carbone de l'hétérocycle
C07D 307/88 - Benzo [c] furannesBenzo [c] furannes hydrogénés avec un atome d'oxygène lié directement en position 1 ou 3
C07D 317/22 - Radicaux substitués par des atomes d'oxygène ou de soufre liés par des liaisons simples éthérifiés
C07D 317/62 - Méthylènedioxybenzènes ou méthylènedioxybenzènes hydrogénés, non substitués sur l'hétérocycle avec des hétéro-atomes ou avec des atomes de carbone comportant trois liaisons à des hétéro-atomes, avec au plus une liaison à un halogène, p. ex. radicaux ester ou nitrile, liés directement aux atomes du carbocycle
C07D 317/72 - Composés hétérocycliques contenant des cycles à cinq chaînons comportant deux atomes d'oxygène comme uniques hétéro-atomes du cycle comportant les hétéro-atomes en positions 1, 3 condensés en spiro avec des carbocycles
C07D 333/62 - Benzo [b] thiophènesBenzo [b] thiophènes hydrogénés avec des hétéro-atomes ou avec des atomes de carbone comportant trois liaisons à des hétéro-atomes, avec au plus une liaison à un halogène, p. ex. radicaux ester ou nitrile, liés directement aux atomes de carbone de l'hétérocycle
Disclosed is a photosensitive composition which contains the components (A) and (B) described below. (A): One or more Si-containing compounds selected from among (A1) and (A2) described below (A1): An Si-containing compound that has a structural unit a1 having an alkali-soluble group and a polymerizable group, and a structural unit a2 having a polymerizable group or a structural unit a3 having an alkali-soluble group (A2): An Si-containing compound that has a structural unit a2 having a polymerizable group and a structural unit a3 having an alkali-soluble group (B): Photopolymerization initiator
C08F 299/08 - Composés macromoléculaires obtenus par des interréactions de polymères impliquant uniquement des réactions entre des liaisons non saturées carbone-carbone, en l'absence de monomères non macromoléculaires à partir de polycondensats non saturés à partir de polysiloxanes
C08G 77/20 - Polysiloxanes contenant du silicium lié à des groupes aliphatiques non saturés
C08G 77/38 - Polysiloxanes modifiés par post-traitement chimique
G02B 1/111 - Revêtements antiréfléchissants utilisant des couches comportant des matériaux organiques
A polyamide-based resin melt obtained by melt-kneading a base resin, an organic compound-based additive (A), and an iodide-based additive (X) is granulated to prepare polyamide-based resin particles. The polyamide-based resin particles are expanded by using a physical blowing agent to produce polyamide-based resin expanded beads. The polyamide-based resin expanded beads are in-mold molded to produce a polyamide-based resin expanded molded article. The organic compound-based additive (A) is made of a hindered phenol-based compound and/or an organophosphorus-based compound. The iodide-based additive (X) is made of copper iodide, or copper iodide and potassium iodide.
C08J 3/20 - Formation de mélanges de polymères avec des additifs, p. ex. coloration
C08J 9/00 - Mise en œuvre de substances macromoléculaires pour produire des matériaux ou objets poreux ou alvéolairesLeur post-traitement
C08J 9/12 - Mise en œuvre de substances macromoléculaires pour produire des matériaux ou objets poreux ou alvéolairesLeur post-traitement utilisant des gaz de gonflage produits par un agent de gonflage introduit au préalable par un agent physique de gonflage
44.
POLYAMIDE RESIN FOAMED PARTICLES AND METHOD FOR PRODUCING SAME
A polyamide-based resin expanded bead comprising a foam layer formed by expanding a polyamide-based resin, wherein on a first DSC curve and a second DSC curve, the first DSC curve has a melting peak (intrinsic peak) having a peak top temperature on a low temperature side equal to or lower than a peak top temperature of a melting peak of the second DSC curve and a melting peak (high temperature peak) having a peak top temperature on a high temperature side exceeding the peak top temperature of the second DSC curve, and, the peak top temperature of the melting peak of the second DSC curve is 180° C. or higher and 280° C. or lower, and the polyamide-based resin expanded bead has an apparent density of 10 to 300 kg/m3 and a closed cell ratio of 85% or more.
A method for producing a semiconductor substrate includes: applying a silicon-containing composition directly or indirectly to a substrate to form a silicon-containing film; applying a composition for forming a resist film to the silicon-containing film to form a resist film; exposing the resist film to radiation; and developing at least the exposed resist film. The silicon-containing composition includes: a silicon-containing compound; a polymer including a structural unit represented by formula (1); and a solvent. A content of the silicon-containing compound in the silicon-containing composition relative to 100% by mass of components other than the solvent in the silicon-containing composition is from 50% to 99.9% by mass. RA1 is a hydrogen atom or a monovalent organic group having 1 to 20 carbon atoms; and RA2 is a monovalent organic group having 1 to 20 carbon atoms.
A method for producing a semiconductor substrate includes: applying a silicon-containing composition directly or indirectly to a substrate to form a silicon-containing film; applying a composition for forming a resist film to the silicon-containing film to form a resist film; exposing the resist film to radiation; and developing at least the exposed resist film. The silicon-containing composition includes: a silicon-containing compound; a polymer including a structural unit represented by formula (1); and a solvent. A content of the silicon-containing compound in the silicon-containing composition relative to 100% by mass of components other than the solvent in the silicon-containing composition is from 50% to 99.9% by mass. RA1 is a hydrogen atom or a monovalent organic group having 1 to 20 carbon atoms; and RA2 is a monovalent organic group having 1 to 20 carbon atoms.
G03F 7/00 - Production par voie photomécanique, p. ex. photolithographique, de surfaces texturées, p. ex. surfaces impriméesMatériaux à cet effet, p. ex. comportant des photoréservesAppareillages spécialement adaptés à cet effet
C08K 5/5419 - Composés contenant du silicium contenant de l'oxygène contenant au moins une liaison Si—O contenant au moins une liaison Si—C
C09D 133/06 - Homopolymères ou copolymères d'esters d'esters ne contenant que du carbone, de l'hydrogène et de l'oxygène, l'atome d'oxygène faisant uniquement partie du radical carboxyle
G03F 7/039 - Composés macromoléculaires photodégradables, p. ex. réserves positives sensibles aux électrons
Provided are: a resist underlayer film-forming composition that is capable of forming a resist underlayer film that can impart excellent pattern rectangularity to a resist pattern; and a method for producing a semiconductor substrate. The method for producing a semiconductor substrate comprises: a step for directly or indirectly coating a substrate with a resist underlayer film-forming composition; a step for forming a resist film on the resist underlayer film formed by the aforementioned step for coating a resist underlayer film-forming composition; a step for exposing the resist film to radiation; and a step for developing at least the exposed resist film. The resist underlayer film-forming composition contains a polymer and a solvent. The polymer contains a repeating unit (1) having an organosulfonate anion moiety and an onium cation moiety, a repeating unit (2) represented by formula (2), and a repeating unit (3) represented by formula (3). (In formula (2), R4is a group selected from the group consisting of groups represented by any of formulas (2-1) to (2-8).) (In formula (3), R6is a group that contains a substructure represented by formula (3-1) or (3-2).) (In formulas (3-1) and (3-2), X1and X2 are each independently an oxygen atom, a sulfur atom, or a nitrogen atom. A formula in which a solid line and a broken line are combined indicates a single bond or a double bond each independently.)
G03F 7/11 - Matériaux photosensibles caractérisés par des détails de structure, p. ex. supports, couches auxiliaires avec des couches de recouvrement ou des couches intermédiaires, p. ex. couches d'ancrage
C08F 228/02 - Copolymères de composés contenant un ou plusieurs radicaux aliphatiques non saturés, chaque radical ne contenant qu'une seule liaison double carbone-carbone et l'un au moins étant terminé par une liaison au soufre ou par un hétérocycle contenant du soufre par une liaison au soufre
G03F 7/095 - Matériaux photosensibles caractérisés par des détails de structure, p. ex. supports, couches auxiliaires ayant plus d'une couche photosensible
H01L 21/027 - Fabrication de masques sur des corps semi-conducteurs pour traitement photolithographique ultérieur, non prévue dans le groupe ou
These polypropylene resin foam particles each have a foam core layer composed of a polypropylene resin, and a coating layer covering the foam core layer. The coating layer is composed of linear low-density polyethylene. The mass ratio of the coating layer to the foam core layer is 0.005-0.05. The polypropylene resin constituting the foam core layer satisfies a prescribed condition (i) or (ii). Said foam particles can remarkably reduce the steam pressure at the time of in-mold molding, can shorten the curing time, and furthermore makes it possible to obtain a foam particle molded article that has a desired shape and is excellent in appearance even when the curing time is shortened.
01 - Produits chimiques destinés à l'industrie, aux sciences ainsi qu'à l'agriculture
Produits et services
Chemicals for use in industry; industrial chemicals for use in the manufacture of semiconductors; photoresists; chemical compositions for developing photographs; chemical preparations for use in photography; photographic sensitizers; photographic developers.
An enzyme sensor may be configured to measure a measurement target substance included in a secretion of a living body. The enzyme sensor may include a layered structure including, in this order, (a) an absorber layer configured to absorb the secretion, (b) an enzyme layer containing an enzyme, (c) a mediator layer, and (d) an electrode part. The absorber layer may include a polymeric material having a chemically bound crosslinked structure.
A61B 5/1486 - Mesure des caractéristiques du sang in vivo, p. ex. de la concentration des gaz dans le sang ou de la valeur du pH du sang en utilisant des procédés chimiques ou électrochimiques, p. ex. par des moyens polarographiques en utilisant des électrodes enzymatiques, p. ex. avec oxydase immobilisée
A61B 5/145 - Mesure des caractéristiques du sang in vivo, p. ex. de la concentration des gaz dans le sang ou de la valeur du pH du sang
C12Q 1/00 - Procédés de mesure ou de test faisant intervenir des enzymes, des acides nucléiques ou des micro-organismesCompositions à cet effetProcédés pour préparer ces compositions
G06F 9/06 - Dispositions pour la commande par programme, p. ex. unités de commande utilisant des programmes stockés, c.-à-d. utilisant un moyen de stockage interne à l'équipement de traitement de données pour recevoir ou conserver les programmes
G06F 15/00 - Calculateurs numériques en généralÉquipement de traitement de données en général
01 - Produits chimiques destinés à l'industrie, aux sciences ainsi qu'à l'agriculture
Produits et services
Chemicals for use in industry; industrial chemicals for use in the manufacture of semiconductors; photoresists; chemical compositions for developing photographs; chemical preparations for use in photography; photographic sensitizers; photographic developers.
52.
METHOD FOR MANUFACTURING MAGNETIC TUNNEL JUNCTION ELEMENT
Provided is a method for manufacturing a magnetic tunnel junction element provided with a magnetic tunnel junction layer and a metal layer in the stated order directly or indirectly on a substrate, the method comprising: a step for applying, to the metal layer, a resist composition containing a polymer that has a structural unit containing an aromatic ring; a step for exposing a resist film formed through the application step; a step for developing the exposed resist film; and a step for etching the magnetic tunnel junction layer and the metal layer using, as a mask, a resist pattern formed through the development step.
A method for manufacturing a magnetic tunnel junction element comprising a magnetic tunnel junction layer and a metal layer directly or indirectly on a substrate in this order, the method comprising: a step for forming a resist underlayer film on the metal layer; a step for forming a silicon oxide film on the resist underlayer film; and a step for forming a resist film on the silicon oxide film, wherein the resist underlayer film is formed from a resist underlayer film-forming composition containing a compound having an aromatic ring and a solvent.
G03F 7/11 - Matériaux photosensibles caractérisés par des détails de structure, p. ex. supports, couches auxiliaires avec des couches de recouvrement ou des couches intermédiaires, p. ex. couches d'ancrage
G03F 7/40 - Traitement après le dépouillement selon l'image, p. ex. émaillage
H10B 61/00 - Dispositifs de mémoire magnétique, p. ex. dispositifs RAM magnéto-résistifs [MRAM]
Provided are: a method for manufacturing a semiconductor substrate that uses an underlayer film for a metal-containing resist, the underlayer film capable of imparting good rectangularity to a metal resist pattern; and an underlayer film-forming composition for a first metal-containing resist. This method for manufacturing a semiconductor substrate includes: a step for directly or indirectly coating a substrate with an underlayer film-forming composition for a first metal-containing resist; a step for forming a metal-containing resist film, which is made of a second metal-containing resist forming material, on an underlayer film for a metal-containing resist, the underlayer film having been formed by the underlayer film-forming composition coating step for the first metal-containing resist; a step for exposing the metal-containing resist film to extreme ultraviolet rays; and a step for developing the exposed metal-containing resist film. The underlayer film-forming composition for the first metal-containing resist contains a solvent and a metal compound composed of at least a metal atom and an organic acid.
G03F 7/11 - Matériaux photosensibles caractérisés par des détails de structure, p. ex. supports, couches auxiliaires avec des couches de recouvrement ou des couches intermédiaires, p. ex. couches d'ancrage
A polyamide-based resin expanded bead comprising a foam layer formed by expanding a polyamide-based resin, wherein on a first DSC curve and a second DSC curve, the first DSC curve has a melting peak (intrinsic peak) having a peak top temperature on a low temperature side equal to or lower than a peak top temperature of a melting peak of the second DSC curve and a melting peak (high temperature peak) having a peak top temperature on a high temperature side exceeding the peak top temperature of the second DSC curve, and, the peak top temperature of the melting peak of the second DSC curve is 180° C. or higher and 280° C. or lower, and the polyamide-based resin expanded bead has an apparent density of 10 to 300 kg/m3 and a closed cell ratio of 85% or more.
Provided are: a method for producing an organic compound, the method simply and economically rationally enabling a reaction by a mechanochemical method; and a mechanochemical reactor. Provided is a method for producing an organic compound, the method comprising a step for carrying out a reaction in a reactor, wherein the reactor comprises a non-metal reaction container and a plurality of stirring media having been charged into the reaction container, at least the surfaces of the stirring media being non-metal, and the reaction is carried out by a mechanochemical method by means of relative movement between the reaction container and the stirring media. In this method, the acceleration of the movement of the stirring media caused by the movement of the reaction container is 9.83 m/s2 or less.
C07C 1/32 - Préparation d'hydrocarbures à partir d'un ou plusieurs composés, aucun d'eux n'étant un hydrocarbure à partir de composés renfermant des hétéro-atomes autres que l'oxygène ou les halogènes, ou en addition à ceux-ci
C07C 5/44 - Préparation d'hydrocarbures à partir d'hydrocarbures contenant le même nombre d'atomes de carbone par déshydrogénation avec un accepteur d'hydrogène avec un halogène ou un composé contenant un halogène comme accepteur
C07C 13/62 - Hydrocarbures polycycliques ou leurs dérivés hydrocarbonés acycliques à cycles condensés à plus de trois cycles condensés
C07C 15/24 - Hydrocarbures polycycliques condensés contenant deux cycles
C07C 29/40 - Préparation de composés comportant des groupes hydroxyle ou O-métal liés à un atome de carbone ne faisant pas partie d'un cycle aromatique à six chaînons par des réactions augmentant le nombre d'atomes de carbone avec formation de groupes hydroxyle, ces groupes pouvant être produits par l'intermédiaire de dérivés de groupes hydroxyle, p. ex. du dérivé O-métal par réactions avec des aldéhydes ou des cétones avec des composés contenant des liaisons carbone-métal
C07C 29/143 - Préparation de composés comportant des groupes hydroxyle ou O-métal liés à un atome de carbone ne faisant pas partie d'un cycle aromatique à six chaînons par réduction d'un groupe fonctionnel contenant de l'oxygène de groupes contenant C=O, p. ex. —COOH de cétones
C07C 33/24 - Alcools monohydroxyliques ne contenant que des cycles aromatiques à six chaînons dans la partie cyclique polycycliques sans système cyclique condensé
C07C 33/26 - Alcools polyhydroxyliques ne contenant que des cycles aromatiques à six chaînons dans la partie cyclique
C07C 45/46 - Préparation de composés comportant des groupes C=O liés uniquement à des atomes de carbone ou d'hydrogènePréparation des chélates de ces composés par condensation par réactions de Friedel-Crafts
C07C 49/784 - Cétones comportant un groupe cétone lié à un cycle aromatique à six chaînons polycycliques tous les groupes cétone étant liés à un cycle non condensé
C07C 231/02 - Préparation d'amides d'acides carboxyliques à partir d'acides carboxyliques ou à partir de leurs esters, anhydrides ou halogénures par réaction avec de l'ammoniac ou des amines
C07C 233/15 - Amides d'acides carboxyliques ayant des atomes de carbone de groupes carboxamide liés à des atomes d'hydrogène ou à des atomes de carbone acycliques ayant l'atome d'azote d'au moins un des groupes carboxamide lié à un atome de carbone d'un radical hydrocarboné substitué par des atomes d'halogène ou par des groupes nitro ou nitroso avec le radical hydrocarboné substitué lié à l'atome d'azote du groupe carboxamide par un atome de carbone d'un cycle aromatique à six chaînons
57.
RADIATION-SENSITIVE COMPOSITION, RESIST PATTERN FORMATION METHOD, POLYMER AND METHOD FOR PRODUCING SAME, AND COMPOUND
This radiation-sensitive composition contains a polymer represented by formula (1). In formula (1), A1and A2each independently represent a group represented by formula (a-1), formula (a-2), formula (a-3), or formula (a-4). B1represents a divalent group having a partial structure by which the bond between A1and A2mediated by B1can be cut by the action of an acid. P1and P2 are each independently a molecule chain.
G03F 7/039 - Composés macromoléculaires photodégradables, p. ex. réserves positives sensibles aux électrons
C08F 2/44 - Polymérisation en présence d'additifs, p. ex. plastifiants, matières colorantes, charges
C08F 20/00 - Homopolymères ou copolymères de composés contenant un ou plusieurs radicaux aliphatiques non saturés, chaque radical ne contenant qu'une seule liaison double carbone-carbone et un seul étant terminé par un seul radical carboxyle ou un sel, anhydride, ester, amide, imide ou nitrile
C08F 220/18 - Esters des alcools ou des phénols monohydriques des phénols ou des alcools contenant plusieurs atomes de carbone avec l'acide acrylique ou l'acide méthacrylique
A radiation-sensitive composition contains a polymer having an acid-releasable group, and a compound (Q) represented by formula (1). In the formula (1), L1 represents an ester group, —CO—NR3—, a (thio)ether group, or a sulfonyl group. R4 represents a hydrogen atom, a substituted or unsubstituted C1 to C20 monovalent hydrocarbon group, a halogen atom, a hydroxy group, or a nitro group. R5 represents a C1 to C20 monovalent hydrocarbon group, a C1 to C20 monovalent halogenated hydrocarbon group, or a halogen atom, and optionally two R5s taken together represent an alicyclic structure together with the carbon atom(s) between the two R5s. L2 represents a single bond or a divalent linking group.
A radiation-sensitive composition contains a polymer having an acid-releasable group, and a compound (Q) represented by formula (1). In the formula (1), L1 represents an ester group, —CO—NR3—, a (thio)ether group, or a sulfonyl group. R4 represents a hydrogen atom, a substituted or unsubstituted C1 to C20 monovalent hydrocarbon group, a halogen atom, a hydroxy group, or a nitro group. R5 represents a C1 to C20 monovalent hydrocarbon group, a C1 to C20 monovalent halogenated hydrocarbon group, or a halogen atom, and optionally two R5s taken together represent an alicyclic structure together with the carbon atom(s) between the two R5s. L2 represents a single bond or a divalent linking group.
C07C 69/75 - Esters d'acides carboxyliques dont un groupe carboxyle est lié à un atome de carbone d'un cycle autre qu'un cycle aromatique à six chaînons d'acides avec un cycle à six chaînons
C07C 309/12 - Acides sulfoniques ayant des groupes sulfo liés à des atomes de carbone acycliques d'un squelette carboné acyclique saturé contenant des atomes d'oxygène liés au squelette carboné contenant des groupes hydroxy estérifiés liés au squelette carboné
C07C 309/17 - Acides sulfoniques ayant des groupes sulfo liés à des atomes de carbone acycliques d'un squelette carboné acyclique saturé contenant des groupes carboxyle liés au squelette carboné
C07C 309/27 - Acides sulfoniques ayant des groupes sulfo liés à des atomes de carbone de cycles autres que des cycles aromatiques à six chaînons d'un squelette carboné contenant des groupes carboxyle liés au squelette carboné
C07D 207/416 - Pyrrolidines-2, 5 diones avec des hétéro-atomes ou des atomes de carbone comportant trois liaisons à des hétéro-atomes avec au plus une liaison à un halogène, p. ex. radicaux ester ou nitrile, liés directement aux autres atomes de carbone du cycle
C07D 307/00 - Composés hétérocycliques contenant des cycles à cinq chaînons comportant un atome d'oxygène comme unique hétéro-atome du cycle
C07D 307/94 - Composés hétérocycliques contenant des cycles à cinq chaînons comportant un atome d'oxygène comme unique hétéro-atome du cycle condensés en spiro avec des carbocycles ou avec des systèmes carbocycliques, p. ex. griséofulvines
C07D 311/00 - Composés hétérocycliques contenant des cycles à six chaînons comportant un atome d'oxygène comme unique hétéro-atome du cycle, condensés avec d'autres cycles
C07D 313/06 - Cycles à sept chaînons condensés avec des carbocycles ou avec des systèmes carbocycliques
Provided are: a semiconductor substrate manufacturing method with which it is possible to improve the etching resistance of a reversal pattern of a metal-containing resist pattern and the rectangularity of the reversal pattern; and a reversal pattern forming material. This semiconductor substrate manufacturing method comprises: a step for forming a metal-containing resist film directly or indirectly on a substrate with use of a metal-containing resist forming material; a step for subjecting the metal-containing resist film to light exposure by means of extreme ultraviolet light; a step for developing the light-exposed metal-containing resist film; a step for forming, on the metal-containing resist pattern that is formed in the development step, a film for reversal pattern formation with use of a reversal pattern forming material; and a step for removing the metal-containing resist pattern so as to form a reversal pattern that is formed of the film for reversal pattern formation. The metal-containing resist forming material contains tin atoms, and the reversal pattern forming material contains silicon atoms.
The purpose of the present invention is to manufacture a fine-patterned magnetic storage element with high precision. A magnetic storage element (1) includes: a magnetic tunnel junction layer (30) having a structure in which an insulating layer (32) is sandwiched between two magnetic layers (31) and (33), and in which the resistance state changes in accordance with the magnetization direction of one of the magnetic layer (31) and the magnetic layer (33); and a metal layer (40) provided on the magnetic tunnel junction layer (30). A method for manufacturing the magnetic storage element (1) includes a step for forming a resist film (50) having an opening (50a) on a substrate (10) on which an electrode layer (20) is formed, a step for forming a magnetic tunnel junction layer (30) on the electrode layer (20) exposed in the opening (50a), a step for forming a metal layer (40) on the magnetic tunnel junction layer (30), and a step for removing the resist film (50).
A radiation-sensitive composition contains a polymer having an acid-releasable group, and a compound represented by formula (1). In the formula (1), A1 represents a (m+n+2)-valent aromatic ring group. Both —OH and —COO− are bound to a common benzene ring in A1. Atom to which —OH is bound is located next to an atom to which —COO31 is bound. R1 represents a monovalent group comprising a cyclic (thio)acetal structure. m is an integer of ≥0. n is an integer of ≥0. M+ represents a monovalent organic cation.
A radiation-sensitive composition contains a polymer having an acid-releasable group, and a compound represented by formula (1). In the formula (1), A1 represents a (m+n+2)-valent aromatic ring group. Both —OH and —COO− are bound to a common benzene ring in A1. Atom to which —OH is bound is located next to an atom to which —COO31 is bound. R1 represents a monovalent group comprising a cyclic (thio)acetal structure. m is an integer of ≥0. n is an integer of ≥0. M+ represents a monovalent organic cation.
Provided are a radiation-sensitive composition and a pattern formation method capable of exhibiting sensitivity, CDU performance, and LWR performance at a sufficient level when a resist pattern is formed using next-generation technology. In the present invention, a radiation-sensitive composition contains: a polymer including structural units having an acid-dissociable group; a radiation-sensitive acid generator containing a first organic acid anion and a first onium cation; an acid diffusion control agent that contains a second organic acid anion and a second onium cation, and generates an acid having a higher pKa than an acid generated from the radiation-sensitive acid generator under exposure to radiation; and a solvent. The first organic acid anion contains an acid anion moiety and an aromatic ring having at least both a first substituent and a second substituent. The first substituent and the second substituent are each independently a hydroxy group, a sulfo group, or a sulfanyl group. At least one selected from the group consisting of the polymer, the radiation-sensitive acid generator, and the acid diffusion control agent contains an iodo group.
A composition for insulating-film formation which comprises: a polyfunctional acrylate having 2-6 acrylic groups in the molecule; a free-radical photopolymerization initiator; and a solvent having a boiling point at atmospheric pressure of 100-250°C and a surface tension of 20-34 mN/m.
[Problem] To provide: an optical member that accurately eliminates noise light impinging from the perpendicular direction, is capable of improving the detection intensity ratio T2/T1 between the transmissivity T1 of perpendicular light that is noise light and the transmissivity T2 of obliquely impinging signal light designed in consideration of Snell's law, and is adaptable to flexible devices; a sensor module using the optical member; and a manufacturing method for the optical member. [Solution] An optical member containing a compound A having an absorption maximum wavelength (λmax) at a wavelength of 581-1200 nm, and provided with a first optical portion having an average transmissivity of 20% or less at the absorption maximum wavelength (λmax) ± 20 nm, and a second optical portion having an average transmissivity of 70% or more at the absorption maximum wavelength (λmax) ± 20 nm, wherein the second optical portion has an inclination of 0.1° to 70° or -0.1° to -70°, measured from the normal to the surface of the optical member, with respect to the thickness direction of the optical member.
The present invention provides a radiation-sensitive composition and a pattern formation method with which it is possible to form a resist film in which development defects can be minizied and sensitivity and CDU can be exhibited at a sufficient level when a next-generation technology is applied. The present invention also provides a radiation-sensitive acid generation agent that can be applied to the radiation-sensitive composition. The radiation-sensitive composition contains a polymer (A) containing structural units (I) having an acid dissociable group, and a solvent (C), the radiation-sensitive composition meeting criteria (i) and/or (ii) below. (i) Contains a radiation-sensitive acid generator (B) containing a first organic acid anion and a first onium cation, the first onium cation containing a halogen-free electron-withdrawing group that contains no halogen atoms, and the first organic acid anion being a sulfonic acid anion that contains an iodine atom. (ii) The polymer (A) is a radiation-sensitive acid-generating polymer (A1) containing structural units (IV) having a second organic acid anion and a second onium cation, the second onium cation containing a halogen-free electron-withdrawing group that contains no halogen atoms, and the second organic acid anion being a sulfonic acid anion that contains an iodine atom.
The purpose of the present invention is to provide: a photosensitive composition that undergoes little increase in viscosity even after a given period of time has elapsed, has exceptional storage stability, does not solidify when a coating slit nozzle or the like is used, and can be applied even after a given period of time has elapsed (has excellent coating properties over time); a cured film formed from the photosensitive composition; a method for producing the cured film; a display element provided with the cured film; and an imaging element provided with the cured film. The present invention relates to a photosensitive composition for forming an optical member, the photosensitive composition containing particles (A), a radically polymerizable compound (B), a photoradical generator (C), and a dehydrating agent (D), the dehydrating agent (D) containing an orthoester compound.
Provided are: a radiation-sensitive composition that makes it possible to achieve substantial sensitivity, LWR performance, DOF performance, pattern rectangularity, CDU performance, and pattern circularity when a resist pattern is formed; a pattern formation method; and an onium salt compound. A radiation-sensitive composition according to the present invention includes an onium salt compound represented by formula (1), a polymer that includes a structural unit that has an acid-dissociable group, and a solvent. (In formula (1), A is a C1–40 monovalent organic group, R1and R2are each independently a hydrogen atom, a C1–20 monovalent fluorine-free organic group, a cyano group, a nitro group, a hydroxyl group, or an amino group, each of the R1s and R2s being the same or different when there are a plurality of R1s and R211 is an integer from 1 to 8, inclusive, and Z+ is a monovalent radiation-sensitive onium cation.)
C07C 317/10 - SulfonesSulfoxydes ayant des groupes sulfone ou sulfoxyde liés à des atomes de carbone acycliques d'un squelette carboné non saturé contenant des cycles
C07C 317/12 - SulfonesSulfoxydes ayant des groupes sulfone ou sulfoxyde liés à des atomes de carbone de cycles autres que des cycles aromatiques à six chaînons
C07C 317/14 - SulfonesSulfoxydes ayant des groupes sulfone ou sulfoxyde liés à des atomes de carbone de cycles aromatiques à six chaînons
C07C 317/18 - SulfonesSulfoxydes ayant des groupes sulfone ou sulfoxyde et des atomes d'oxygène, liés par des liaisons simples, liés au même squelette carboné avec des groupes sulfone ou sulfoxyde liés à des atomes de carbone acycliques du squelette carboné
C07C 317/44 - SulfonesSulfoxydes ayant des groupes sulfone ou sulfoxyde et des groupes carboxyle liés au même squelette carboné
C07D 307/00 - Composés hétérocycliques contenant des cycles à cinq chaînons comportant un atome d'oxygène comme unique hétéro-atome du cycle
C07D 307/33 - Atomes d'oxygène en position 2, l'atome d'oxygène étant sous la forme céto ou énol non substituée
C07D 317/08 - Composés hétérocycliques contenant des cycles à cinq chaînons comportant deux atomes d'oxygène comme uniques hétéro-atomes du cycle comportant les hétéro-atomes en positions 1, 3
C07D 317/72 - Composés hétérocycliques contenant des cycles à cinq chaînons comportant deux atomes d'oxygène comme uniques hétéro-atomes du cycle comportant les hétéro-atomes en positions 1, 3 condensés en spiro avec des carbocycles
C07D 321/10 - Cycles à sept chaînons condensés avec des carbocycles ou avec des systèmes carbocycliques
C08F 220/18 - Esters des alcools ou des phénols monohydriques des phénols ou des alcools contenant plusieurs atomes de carbone avec l'acide acrylique ou l'acide méthacrylique
Provided are a radiation-sensitive composition and a pattern formation method wherein sensitivity, CDU performance, and development defect suppression can be demonstrated at a sufficient level when next-generation technology is applied. [Solution] This radiation-sensitive composition includes: a polymer that includes a structural unit (I) represented by formula (1); a high-fluorine-content polymer that has a higher mass content of fluorine atoms than the aforementioned polymer; one or more types of onium salts including an organic acid anion and an onium cation; and a solvent, wherein at least some of the organic acid anions in the onium salt or salts include an iodine-substituted aromatic ring structure. (In formula (1), Rαis a hydrogen atom, a fluorine atom, a methyl group, or a trifluoromethyl group; Ar is an aromatic ring with 5-20 members and a valence of (p+q+r+1); R11is a hydrogen atom or a C1-20 monovalent organic group; in cases in which a plurality of R11moieties are present, the plurality of R11moieties are the same as or different from each other; R12is a cyano group, a nitro group, an alkyl group, a fluorinated alkyl group, or an acyl group; in cases in which a plurality of R12moieties are present, the plurality of R12 moieties are the same as or different from each other; p and q are each independently an integer from 1 to 6; and r is an integer from 0 to 3.)
Provided is a thermosetting resin composition for forming a wiring board, the thermosetting resin containing: a polymer (A) having a structural unit represented by formula (1-1); and a copolymer (B) having a structural unit derived from ethylene or α-olefin, a structural unit derived from an aromatic vinyl compound, and a structural unit derived from an aromatic polyfunctional vinyl compound. Also provided are a cured product, a prepreg, and an interlayer insulating film. The details of formula (1-1) are shown in the specification.
H05K 1/03 - Emploi de matériaux pour réaliser le substrat
C08F 2/44 - Polymérisation en présence d'additifs, p. ex. plastifiants, matières colorantes, charges
C08G 65/40 - Composés macromoléculaires obtenus par des réactions créant une liaison éther dans la chaîne principale de la macromolécule à partir de composés hydroxylés ou de leurs dérivés métalliques dérivés des phénols à partir des phénols et d'autres composés
C08K 3/013 - Charges, pigments ou agents de renforcement
A polypropylene-based resin expanded bead, in which the melting point Tma of a polypropylene-based resin (a) constituting a core layer in an expanded state is 135° C. or higher and 155° C. or lower; a polypropylene-based resin (b) constituting a covering layer contains a propylene-based copolymer containing a propylene component, an ethylene component, and a butene component, as a main component; the difference [Tma−Tmb] between the melting point Tma of the polypropylene-based resin (a) and the melting point Tmb of the polypropylene-based resin (b) is 1° C. or more and 30° C. or less; the difference [Tmb−Tcb] between the melting point Tmb of the polypropylene-based resin (b) and the crystallization temperature Tcb of the polypropylene-based resin (b) is 40° C. or less; and the covering layer contains a higher fatty acid amide.
C08J 9/18 - Fabrication de particules expansibles par imprégnation des particules du polymère avec l'agent de gonflage
C08J 9/00 - Mise en œuvre de substances macromoléculaires pour produire des matériaux ou objets poreux ou alvéolairesLeur post-traitement
C08J 9/12 - Mise en œuvre de substances macromoléculaires pour produire des matériaux ou objets poreux ou alvéolairesLeur post-traitement utilisant des gaz de gonflage produits par un agent de gonflage introduit au préalable par un agent physique de gonflage
72.
TWO-LAYER FILM OF MAGNETIC BODY AND INSULATOR, TUNNEL MAGNETORESISTIVE ELEMENT, AND MAGNETIC MEMORY
A two-layer film of a magnetic body and an insulator according to the present invention comprises an antiferromagnetic layer that has a hexagonal crystal structure, with at least one surface thereof being the (10-10) plane of the antiferromagnetic body, and an insulator layer that is composed of two, three, or four kinds of atoms layered on the (10-10) plane. A two-layer film of a magnetic body and an insulator according to the present invention comprises an antiferromagnetic layer that has a hexagonal crystal structure, with at least one surface thereof being the (0001) plane of the antiferromagnetic body, and an insulator layer that is composed of two, three, or four kinds of atoms layered on the (0001) plane. A tunnel magnetoresistive element according to the present invention comprises a second antiferromagnetic film layer that is layered on the insulator of the two-layer film. A magnetic memory according to the present invention comprises a plurality of the tunnel magnetoresistive elements.
A production method for a semiconductor substrate includes: performing a vapor deposition of a metal compound or metal directly or indirectly onto a substrate to form a metal-containing resist film; and exposing the metal-containing resist film to light. The metal compound or metal includes an Au atom, a Cr atom, an Ag atom, an In atom, or a combination thereof. The method preferably further includes developing the metal-containing resist film after exposing. The vapor deposition is preferably performed by PVD or CVD. The metal compound preferably includes a metal complex, a metal halide, or an organometal.
G03F 7/16 - Procédés de couchageAppareillages à cet effet
C23C 16/18 - Revêtement chimique par décomposition de composés gazeux, ne laissant pas de produits de réaction du matériau de la surface dans le revêtement, c.-à-d. procédés de dépôt chimique en phase vapeur [CVD] caractérisé par le dépôt d'un matériau métallique à partir de composés organométalliques
C23C 16/30 - Dépôt de composés, de mélanges ou de solutions solides, p. ex. borures, carbures, nitrures
C23C 16/455 - Revêtement chimique par décomposition de composés gazeux, ne laissant pas de produits de réaction du matériau de la surface dans le revêtement, c.-à-d. procédés de dépôt chimique en phase vapeur [CVD] caractérisé par le procédé de revêtement caractérisé par le procédé utilisé pour introduire des gaz dans la chambre de réaction ou pour modifier les écoulements de gaz dans la chambre de réaction
C23C 16/50 - Revêtement chimique par décomposition de composés gazeux, ne laissant pas de produits de réaction du matériau de la surface dans le revêtement, c.-à-d. procédés de dépôt chimique en phase vapeur [CVD] caractérisé par le procédé de revêtement au moyen de décharges électriques
H01L 21/033 - Fabrication de masques sur des corps semi-conducteurs pour traitement photolithographique ultérieur, non prévue dans le groupe ou comportant des couches inorganiques
74.
METHOD FOR PRODUCING POLYPROPYLENE-BASED RESIN EXPANDED BEADS AND MOLDED ARTICLE OF POLYPROPYLENE-BASED RESIN EXPANDED BEADS
A method for producing polypropylene-based resin expanded beads each having a through-hole by performing a first expanding step and a second expanding step is provided. In the first expanding step, tubular resin particles containing carbon black and having through-holes are dispersed in a dispersion medium and released to an environment under a low pressure, thereby obtaining first-step expanded beads having a bulk ratio of M1 times. In the second expanding step, the first-step expanded beads are further expanded to obtain polypropylene-based resin expanded beads having a bulk ratio of M2 times. The bulk ratio M1 is 5 times or more and 25 times or less. A ratio M2/M1 of the bulk ratio M2 to the bulk ratio M1 is 1.2 or more and 3.0 or less.
The present invention provides: polyolefin-based resin foam particles which exhibit good in-mold moldability and are capable of providing a molded body of foam particles, the molded body exhibiting excellent flame retardancy; and a molded body of polyolefin-based resin foam particles, the molded body having excellent flame retardancy. The polyolefin-based resin foam particles have a bulk density of 10 kg/m3to 100 kg/m3inclusive, contain a NOR-type hindered amine-based compound that is represented by a specific structural formula, and are configured so that the content of the NOR-type hindered amine-based compound in the polyolefin-based resin foam particles is 0.01% by mass to 3% by mass inclusive. The molded body of polyolefin-based resin foam particles has a density of 10 kg/m3to 100 kg/m3 inclusive, and is configured so that the content of the NOR-type hindered amine-based compound that is represented by a specific structural formula in the molded body of polyolefin-based resin foam particles is 0.01% by mass to 3% by mass inclusive.
C08J 9/04 - Mise en œuvre de substances macromoléculaires pour produire des matériaux ou objets poreux ou alvéolairesLeur post-traitement utilisant des gaz de gonflage produits par un agent de gonflage introduit au préalable
76.
POLYPROPYLENE-BASED RESIN FOAM PARTICLE MOLDED BODY AND POLYPROPYLENE-BASED RESIN FOAM PARTICLE
The purpose of the present invention is to provide polyolefin resin foamed particles with through-holes, having small variation in expansion ratio, and to provide a foamed particle molded article having low variation in density of the molded article. Polyolefin resin foamed particles according to the present invention have through-holes, contain magnesium silicate present on the surface of the foamed particles, and have an abundance ratio of magnesium silicate on the surface of the foamed particles of 0.1% by mass to 1% by mass inclusive.
Provided is a method for filling a column with a chromatography carrier, including substituting a slurry with an aqueous solvent not containing a buffer, in which the slurry contains a target substance-capturing chromatography carrier, a buffer having an acid dissociation constant (pKa) within a range of ±1.0 of the isoelectric point of the carrier, and an aqueous solvent and has a pH of a liquid phase adjusted within a range of ±2.0 of the isoelectric point of the carrier, and filling a column with the slurry subjected to solvent substitution. The method may be advantageous for suppressing a decrease in liquid permeability and pressure resistance characteristics during liquid passage of a chromatography carrier when a solvent is substituted with an aqueous solvent not containing a buffer.
G01N 33/68 - Analyse chimique de matériau biologique, p. ex. de sang ou d'urineTest par des méthodes faisant intervenir la formation de liaisons biospécifiques par ligandsTest immunologique faisant intervenir des protéines, peptides ou amino-acides
79.
LIQUID CRYSTAL DISPLAY DEVICE AND MANUFACTURING METHOD THEREFOR
A first and/or second alignment film is a photo-alignment film on which alignment division is performed. Each pixel has multiple alignment regions having different alignment directions of liquid crystal molecules of a liquid crystal layer by the alignment division. The number of times of exposure in each alignment region for the alignment division is two or more and the same number among the regions; in each time of exposure for the alignment division, exposure is performed on two or more alignment regions along an arrangement direction, the previous numbers of times of exposure in alignment regions to be exposed in each times of exposure are the same among the regions; and the angle formed by the alignment direction of the liquid crystal molecules of the liquid crystal layer in each region of the alignment regions and a direction where the polarizing axis of a polarizing plate extends is 45°.
G02F 1/1337 - Orientation des molécules des cristaux liquides induite par les caractéristiques de surface, p. ex. par des couches d'alignement
G02F 1/1335 - Association structurelle de cellules avec des dispositifs optiques, p. ex. des polariseurs ou des réflecteurs
G02F 1/137 - Dispositifs ou dispositions pour la commande de l'intensité, de la couleur, de la phase, de la polarisation ou de la direction de la lumière arrivant d'une source lumineuse indépendante, p. ex. commutation, ouverture de porte ou modulationOptique non linéaire pour la commande de l'intensité, de la phase, de la polarisation ou de la couleur basés sur des cristaux liquides, p. ex. cellules d'affichage individuelles à cristaux liquides caractérisés par l'effet électro-optique ou magnéto-optique, p. ex. transition de phase induite par un champ, effet d'orientation, interaction entre milieu récepteur et matière additive ou diffusion dynamique
80.
RADIATION-SENSITIVE COMPOSITION, PATTERN FORMATION METHOD, AND ONIUM SALT COMPOUND
Provided are: a radiation-sensitive composition which is capable of exhibiting sufficient levels of sensitivity, LWR performance, CDU performance and MEEF performance during formation of a resist pattern, and has satisfactory storage stability; a pattern formation method; and an onium salt compound. The radiation-sensitive composition comprises: an onium salt compound represented by formula (1); a polymer containing a structural unit having an acid-dissociable group; and a solvent. (In formula (1), A represents a monovalent organic group having 1 to 40 carbon atoms. R1and R2each independently represent a hydrogen atom, a cyano group, a nitro group, a hydroxy group, an alkoxy group, an alkylthio group, an amino group, a mercapto group, a monovalent hydrocarbon group having 1 to 20 carbon atoms, or a monovalent hydrocarbon group having 1 to 20 carbon atoms and substituted by at least one of a cyano group, a nitro group, a hydroxy group, an alkoxy group, an alkylthio group, an amino group, a mercapto group, a chlorine atom, a bromine atom and an iodine atom. When a plurality of R1's and a plurality of R2's are present, the plurality of R1's and the plurality of R2's are respectively identical or different from each other. At least one of R1and R211 represents an integer of 1 to 8. L represents *-COO-, *-OCO-, *-CO- or *-OCOO-, and *11 is 1, L is *-COO-, *-CO- or *-OCOO-. Z+ represents a monovalent radiation-sensitive onium cation.)
Provided are: a radiation-sensitive composition capable of exhibiting sensitivity, LWR performance and CDU performance each at a sufficient level when forming a resist pattern, and having good storage stability; a pattern forming method; and an onium salt compound. This radiation-sensitive composition contains: an onium salt compound represented by formula (1); a polymer containing a structural unit (I) having an acid-dissociable group; and a solvent. (In formula (1), W is a cyclic structure having 3-40 ring members and composed with two carbon atoms. The formula between carbon-carbon atoms represents a single or double bond. A is a group represented by formula (A-1), a group represented by formula (A-2), a group represented by formula (A-3), a group represented by formula (A-4), a group represented by formula (A-5), a group represented by formula (A-6), or a group represented by formula (A-7). (In formulae (A-3) and (A-4), RA1and RA2are each independently a monovalent hydrocarbon group having 1-20 carbon atoms. * is a bond to a carbon atom.) R1is a monovalent organic group having 1-20 carbon atoms, a cyano group, a nitro group, a carboxy group, a hydroxy group, an amino group, a halogen atom or a thiol group. In a case where multiple R1moieties are present, the multiple R111 is an integer between 0 and 4. Z+ is a monovalent radiation-sensitive onium cation.)
The purpose of the present invention is to provide: a radiation-sensitive composition capable of forming a gate insulation film pattern (cured film) that is stretchable and is capable of exhibiting pattern formability, electric capacity, and chemical resistance at sufficient levels; a pattern (cured film) formed from the radiation-sensitive composition; a method for producing the pattern; a cured film for a gate insulation film; a semiconductor element provided with the cured film; an organic electrochemical transistor; an organic EL display device; a liquid crystal display device; a micro LED display device; a quantum dot light-emitting display device; a wearable device; an electronic skin device; a biological sensor; and a neuromorphic device. The present invention relates to a radiation-sensitive composition for forming a gate insulation film (excluding any composition containing cresol novolac and a quinone diazide compound), the radiation-sensitive composition containing: at least one polymer (A) selected from the group consisting of polymers (A1) that contain structural units (I) having an acid group, siloxane polymers (A2), and polyamic acids or polyamic acid esters (A3); a radiation-sensitive compound (B); and an ionic liquid (C).
G03F 7/023 - Quinonediazides macromoléculairesAdditifs macromoléculaires, p. ex. liants
G02F 1/1368 - Cellules à adressage par une matrice active dans lesquelles l'élément de commutation est un dispositif à trois électrodes
G09F 9/30 - Dispositifs d'affichage d'information variable, dans lesquels l'information est formée sur un support, par sélection ou combinaison d'éléments individuels dans lesquels le ou les caractères désirés sont formés par une combinaison d'éléments individuels
G09F 9/33 - Dispositifs d'affichage d'information variable, dans lesquels l'information est formée sur un support, par sélection ou combinaison d'éléments individuels dans lesquels le ou les caractères désirés sont formés par une combinaison d'éléments individuels à semi-conducteurs, p. ex. à diodes
G09F 9/35 - Dispositifs d'affichage d'information variable, dans lesquels l'information est formée sur un support, par sélection ou combinaison d'éléments individuels dans lesquels le ou les caractères désirés sont formés par une combinaison d'éléments individuels à cristaux liquides
H01L 21/312 - Couches organiques, p. ex. couche photosensible
H05B 33/14 - Sources lumineuses avec des éléments radiants ayant essentiellement deux dimensions caractérisées par la composition chimique ou physique ou la disposition du matériau électroluminescent
H10K 59/12 - Affichages à OLED à matrice active [AMOLED]
H10K 59/125 - Affichages à OLED à matrice active [AMOLED] comportant des TFT organiques [OTFT]
H10K 71/20 - Modification de la forme de la couche active dans les dispositifs, p. ex. mise en forme
A radiation-sensitive resin composition includes: a polymer comprising a structural unit (I) represented by a formula (1) and a structural unit different from the structural unit (I); a radiation-sensitive acid generator represented by a formula (α); and a solvent. RK1 is a hydrogen atom, a fluorine atom, or the like, L1 is an alkanediyl group, and Rf1 is a fluorinated hydrocarbon group. RW is a monovalent organic group having 3 to 40 carbon atoms that contains a cyclic structure, Rfa and Rfb are each independently a fluorine atom or the like, R11 and R12 are each independently a hydrogen atom, a fluorine atom, or the like, n1 is an integer of 1 to 4, n2 is an integer of 0 to 4, no carbonyl group is present between a sulfur atom of the sulfonic acid ion and the cyclic structure of RW, and Z+ is a monovalent onium cation.
A radiation-sensitive resin composition includes: a polymer comprising a structural unit (I) represented by a formula (1) and a structural unit different from the structural unit (I); a radiation-sensitive acid generator represented by a formula (α); and a solvent. RK1 is a hydrogen atom, a fluorine atom, or the like, L1 is an alkanediyl group, and Rf1 is a fluorinated hydrocarbon group. RW is a monovalent organic group having 3 to 40 carbon atoms that contains a cyclic structure, Rfa and Rfb are each independently a fluorine atom or the like, R11 and R12 are each independently a hydrogen atom, a fluorine atom, or the like, n1 is an integer of 1 to 4, n2 is an integer of 0 to 4, no carbonyl group is present between a sulfur atom of the sulfonic acid ion and the cyclic structure of RW, and Z+ is a monovalent onium cation.
A radiation-sensitive resin composition includes: a polymer comprising a structural unit (I) represented by formula (1) and a structural unit different from the structural unit (I); an onium salt represented by formula (i); and a solvent. In formula (1), RK1 is a hydrogen atom, a fluorine atom, a methyl group, or a trifluoromethyl group, L1 is an alkanediyl group having 1 to 5 carbon atoms, and Rf1 is a fluorinated hydrocarbon group having 2 to 10 carbon atoms and 5 to 7 fluorine atoms. In formula (i), Ra1 is a substituted or unsubstituted monovalent organic group having 1 to 40 carbon atoms with no fluorine atom or fluorinated hydrocarbon group attached to an atom adjacent to the sulfur atom, and X+ is a monovalent onium cation.
A radiation-sensitive resin composition includes: a polymer comprising a structural unit (I) represented by formula (1) and a structural unit different from the structural unit (I); an onium salt represented by formula (i); and a solvent. In formula (1), RK1 is a hydrogen atom, a fluorine atom, a methyl group, or a trifluoromethyl group, L1 is an alkanediyl group having 1 to 5 carbon atoms, and Rf1 is a fluorinated hydrocarbon group having 2 to 10 carbon atoms and 5 to 7 fluorine atoms. In formula (i), Ra1 is a substituted or unsubstituted monovalent organic group having 1 to 40 carbon atoms with no fluorine atom or fluorinated hydrocarbon group attached to an atom adjacent to the sulfur atom, and X+ is a monovalent onium cation.
Provided is a radiation-sensitive resin composition capable of exhibiting sensitivity and CDU performance at a sufficient level when a next-generation technology is applied, and a method for forming a pattern. A radiation-sensitive resin composition contains: a resin containing a structural unit (I) having an acid-dissociable group represented by the following formula (1) and a structural unit (II) having a phenolic hydroxy group, and contains neither an organic acid anion moiety nor an onium cation moiety; one or more onium salts containing an organic acid anion moiety and an onium cation moiety; and a solvent, wherein at least part of the onium cation moiety in the onium salt contains an aromatic ring structure having a fluorine atom. In the formula (1), RT is a hydrogen atom, a fluorine atom, a methyl group, or a trifluoromethyl group, and RX is a monovalent hydrocarbon group having 1 to 20 carbon atoms.
Provided is a radiation-sensitive resin composition capable of exhibiting sensitivity and CDU performance at a sufficient level when a next-generation technology is applied, and a method for forming a pattern. A radiation-sensitive resin composition contains: a resin containing a structural unit (I) having an acid-dissociable group represented by the following formula (1) and a structural unit (II) having a phenolic hydroxy group, and contains neither an organic acid anion moiety nor an onium cation moiety; one or more onium salts containing an organic acid anion moiety and an onium cation moiety; and a solvent, wherein at least part of the onium cation moiety in the onium salt contains an aromatic ring structure having a fluorine atom. In the formula (1), RT is a hydrogen atom, a fluorine atom, a methyl group, or a trifluoromethyl group, and RX is a monovalent hydrocarbon group having 1 to 20 carbon atoms.
G03F 7/039 - Composés macromoléculaires photodégradables, p. ex. réserves positives sensibles aux électrons
C08F 220/18 - Esters des alcools ou des phénols monohydriques des phénols ou des alcools contenant plusieurs atomes de carbone avec l'acide acrylique ou l'acide méthacrylique
A radiation-sensitive resin composition includes a resin including a structural unit (I) represented by formula (1). Ra is a hydrogen atom or a substituted or unsubstituted monovalent hydrocarbon group having 1 to 10 carbon atoms; Ar1 is a substituted or unsubstituted divalent aromatic hydrocarbon group having 6 to 20 carbon atoms; m is 0 or 1; L1 is a single bond, or —O—, *—COO—, a divalent hydrocarbon group having 1 to 20 carbon atoms, or a combination thereof, and * is a bond on an Ar1 side; Ar2 is a monovalent aromatic hydrocarbon group having 6 to 20 carbon atoms and substituted with X; X is an iodine atom or a bromine atom; and n1 is an integer of 1 to nmax, wherein nmax is the number of Xs when all hydrogen atoms in the monovalent aromatic hydrocarbon group represented by the Ar2 are substituted with X.
A radiation-sensitive resin composition includes a resin including a structural unit (I) represented by formula (1). Ra is a hydrogen atom or a substituted or unsubstituted monovalent hydrocarbon group having 1 to 10 carbon atoms; Ar1 is a substituted or unsubstituted divalent aromatic hydrocarbon group having 6 to 20 carbon atoms; m is 0 or 1; L1 is a single bond, or —O—, *—COO—, a divalent hydrocarbon group having 1 to 20 carbon atoms, or a combination thereof, and * is a bond on an Ar1 side; Ar2 is a monovalent aromatic hydrocarbon group having 6 to 20 carbon atoms and substituted with X; X is an iodine atom or a bromine atom; and n1 is an integer of 1 to nmax, wherein nmax is the number of Xs when all hydrogen atoms in the monovalent aromatic hydrocarbon group represented by the Ar2 are substituted with X.
A radiation-sensitive composition for forming an insulation film, includes: at least one polyfunctional compound (A) selected from the group consisting of a polyfunctional maleimide compound (A-1) and a polyfunctional styryl compound (A-2); a polymer (B) having a group Y that reacts with a maleimide group in the polyfunctional maleimide compound (A-1) or a styryl group in the polyfunctional styryl compound (A-2); and a photopolymerization initiator (C). The group Y is represented by Formula (Y1). In Formula (Y1), RY1 represents a hydrogen atom or an alkyl group having 1 to 5 carbon atoms, LY1 represents a single bond, an alkanediyl group having 1 to 5 carbon atoms, —C(O)O—, —NH—C(O)—NH—, or a group obtained by a combination thereof, and * represents a position bonded to a main chain or a side chain of the polymer (B).
A radiation-sensitive composition for forming an insulation film, includes: at least one polyfunctional compound (A) selected from the group consisting of a polyfunctional maleimide compound (A-1) and a polyfunctional styryl compound (A-2); a polymer (B) having a group Y that reacts with a maleimide group in the polyfunctional maleimide compound (A-1) or a styryl group in the polyfunctional styryl compound (A-2); and a photopolymerization initiator (C). The group Y is represented by Formula (Y1). In Formula (Y1), RY1 represents a hydrogen atom or an alkyl group having 1 to 5 carbon atoms, LY1 represents a single bond, an alkanediyl group having 1 to 5 carbon atoms, —C(O)O—, —NH—C(O)—NH—, or a group obtained by a combination thereof, and * represents a position bonded to a main chain or a side chain of the polymer (B).
A radiation-sensitive resin composition includes: a polymer including a first structural unit represented by formula (1), solubility of the polymer in a developer solution capable of being altered by an acid; and a compound represented by formula (2). R1 represents a hydrogen atom, or the like; R2 represents a group obtained by removing, from a substituted or unsubstituted aliphatic hydrocarbon ring having 3 to 30 ring atoms, two hydrogen atoms; and Ar1 represents a group obtained by removing one hydrogen atom from a substituted or unsubstituted aromatic hydrocarbon ring having 6 to 30 ring atoms. Z represents an acid-labile group; L1 represents *—O—CO— or —O—; Y represents an organic group having 1 to 30 carbon atoms, the organic group not comprising a cyclic acetal structure; A− represents a monovalent anion group; n is an integer of 1 to 5; and X+ represents a monovalent radiation-sensitive onium cation.
A radiation-sensitive resin composition includes: a polymer including a first structural unit represented by formula (1), solubility of the polymer in a developer solution capable of being altered by an acid; and a compound represented by formula (2). R1 represents a hydrogen atom, or the like; R2 represents a group obtained by removing, from a substituted or unsubstituted aliphatic hydrocarbon ring having 3 to 30 ring atoms, two hydrogen atoms; and Ar1 represents a group obtained by removing one hydrogen atom from a substituted or unsubstituted aromatic hydrocarbon ring having 6 to 30 ring atoms. Z represents an acid-labile group; L1 represents *—O—CO— or —O—; Y represents an organic group having 1 to 30 carbon atoms, the organic group not comprising a cyclic acetal structure; A− represents a monovalent anion group; n is an integer of 1 to 5; and X+ represents a monovalent radiation-sensitive onium cation.
The present invention comprises: a polymer (A) which contains a structural unit (U1) having an acid-dissociable group, and has a carboxy group; and a radiation-sensitive acid generator (B) (excluding the polymer (A)). At least one compound that is selected from the group consisting of the polymer (A) and the radiation-sensitive acid generator (B) has an iodine group. The polymer (A) contains a structural unit (U2) having a carboxy group. In the radiation-sensitive composition, the carboxy group in the structural unit (U2) is bonded to a carbon atom that constitutes the main chain of the polymer (A), or the structural unit (U2) has a chain structure and the carboxy group is bonded to the chain structure, or the structural unit (U2) has an aromatic ring which is bonded to a carbon atom that constitutes the main chain of the polymer (A) and the carboxy group is bonded to the aromatic ring.
G03F 7/039 - Composés macromoléculaires photodégradables, p. ex. réserves positives sensibles aux électrons
C08F 212/14 - Monomères contenant un seul radical aliphatique non saturé contenant un cycle substitué par des hétéro-atomes ou des groupes contenant des hétéro-atomes
C08F 220/30 - Esters contenant de l'oxygène en plus de l'oxygène de la fonction carboxyle contenant des cycles aromatiques dans la partie alcool
A method for manufacturing a semiconductor substrate, includes: applying a composition for forming a resist underlayer film directly or indirectly to a substrate to form a resist underlayer film; cleaning a periphery of the substrate with a cleaning liquid; and after cleaning the periphery, forming a resist pattern directly or indirectly on the resist underlayer film. The composition for forming a resist underlayer film includes: a metal compound; and a solvent. The cleaning liquid includes an organic acid.
G03F 7/11 - Matériaux photosensibles caractérisés par des détails de structure, p. ex. supports, couches auxiliaires avec des couches de recouvrement ou des couches intermédiaires, p. ex. couches d'ancrage
C11D 7/26 - Composés organiques contenant de l'oxygène
A radiation-sensitive resin composition includes a resin, an acid diffusion controlling agent represented by formula (a), and a solvent. The resin includes: at least one structural unit selected from the group consisting of a structural unit represented by formula (1) and a structural unit represented by formula (2); and a structural unit including a phenolic hydroxy group. Rw is a monovalent organic group having 1 to 20 carbon atoms, a hydroxy group, or an amino group; Lq is a divalent linking group; Z+ is a monovalent radiation-sensitive onium cation; q1 is an integer of 1 to 4; q2 is an integer of 0 to 3; q3 is an integer of 1 to 3; and an upper limit of q1+q2+q3 is 6.
A radiation-sensitive resin composition includes a resin, an acid diffusion controlling agent represented by formula (a), and a solvent. The resin includes: at least one structural unit selected from the group consisting of a structural unit represented by formula (1) and a structural unit represented by formula (2); and a structural unit including a phenolic hydroxy group. Rw is a monovalent organic group having 1 to 20 carbon atoms, a hydroxy group, or an amino group; Lq is a divalent linking group; Z+ is a monovalent radiation-sensitive onium cation; q1 is an integer of 1 to 4; q2 is an integer of 0 to 3; q3 is an integer of 1 to 3; and an upper limit of q1+q2+q3 is 6.
According to the present invention, manufactured is a surface-treated substrate by a method including a step for selectively modifying the surface of a substrate by coating the surface of the substrate with a composition. The composition contains: an onium salt having a nitrogen-containing heterocycle and a monovalent organic group having 4 or more carbon atoms; and 1 mass% or more of water with respect to the total amount of the composition.
A method for producing a metabolically activated liver organoid, said method comprising a step for culturing primary hepatocytes or hepatocyte-like cells in a differentiation culture medium to obtain a metabolically activated liver organoid, wherein the differentiation culture medium contains: one or two types of agonist selected from the group consisting of growth hormone receptor agonists and prolactin receptor agonists; and a glucocorticoid receptor agonist.
C12N 5/071 - Cellules ou tissus de vertébrés, p. ex. cellules humaines ou tissus humains
C12N 1/00 - Micro-organismes, p. ex. protozoairesCompositions les contenantProcédés de culture ou de conservation de micro-organismes, ou de compositions les contenantProcédés de préparation ou d'isolement d'une composition contenant un micro-organismeLeurs milieux de culture
C12Q 1/02 - Procédés de mesure ou de test faisant intervenir des enzymes, des acides nucléiques ou des micro-organismesCompositions à cet effetProcédés pour préparer ces compositions faisant intervenir des micro-organismes viables
A chromatographic bed insert includes a base having openings and an array of projection members positioned on the base and projecting substantially perpendicular to the base. The chromatographic bed insert has a displacement volume % D which is less than 50% of a volume defined by the chromatographic bed insert and is structured to reduce a hydraulic radius RH of a chromatography bed including the chromatographic bed insert by at least 25% compared to a corresponding chromatography bed which does not include the chromatographic bed insert.
B01D 15/20 - Adsorption sélective, p. ex. chromatographie caractérisée par des caractéristiques de structure ou de fonctionnement relatives au conditionnement de la matière adsorbante ou absorbante
An organoid production method includes culturing a human stem cell in a culture medium containing a cyclic peptide having an amino acid sequence set forth in Formula (1) or a pharmaceutically acceptable salt of the cyclic peptide [in Formula (1), X1 to X6 each represent a specific modified amino acid, X7 represents any amino acid residue, R is absent or represents a C-terminal modification group, n is an integer of 0 or 1, PeG is N-(2-phenylethyl)-glycine, and Nal1 is β-(1-naphthyl)-L-alanine].
An organoid production method includes culturing a human stem cell in a culture medium containing a cyclic peptide having an amino acid sequence set forth in Formula (1) or a pharmaceutically acceptable salt of the cyclic peptide [in Formula (1), X1 to X6 each represent a specific modified amino acid, X7 represents any amino acid residue, R is absent or represents a C-terminal modification group, n is an integer of 0 or 1, PeG is N-(2-phenylethyl)-glycine, and Nal1 is β-(1-naphthyl)-L-alanine].
Provided are: a radioactive-ray-sensitive resin composition which makes it possible to form a resist film having satisfactory storage stability and also having excellent sensitivity and LWR performance when a next-generation technology is applied; and a pattern formation method. This radioactive-ray-sensitive resin composition contains: a radioactive-ray-sensitive onium salt including a fluorine atom at a cation portion; a compound represented by formula (H); and a resin including a structural unit having an acid-dissociable group. (In formula (H), R1-R3 each independently represent a substituted or unsubstituted aliphatic hydrocarbon group having 1-20 carbon atoms.)
C07D 307/58 - Un atome d'oxygène, p. ex. buténolide
C07D 317/70 - Composés hétérocycliques contenant des cycles à cinq chaînons comportant deux atomes d'oxygène comme uniques hétéro-atomes du cycle comportant les hétéro-atomes en positions 1, 3 condensés en ortho ou en péri avec des carbocycles ou avec des systèmes carbocycliques condensés avec des systèmes cycliques contenant au moins deux cycles déterminants
C08F 12/14 - Monomères ne contenant qu'un seul radical aliphatique non saturé contenant un seul cycle substitué par des hétéro-atomes ou des groupes contenant des hétéro-atomes
G03F 7/039 - Composés macromoléculaires photodégradables, p. ex. réserves positives sensibles aux électrons
Provided are: a radiation-sensitive composition able to form a resist film or a pattern that is excellent in terms of sensitivity, LWR performance, DOF performance, pattern squareness, CDU performance, pattern circularity, EL performance and pattern collapse resistance; a method for forming a pattern; and an onium salt. The radiation-sensitive composition contains: an onium salt represented by formula (1); a polymer containing a structural unit having an acid-dissociable group; and a solvent. (In formula (1), Q1and Q2each independently denote a carbon atom or a nitrogen atom. However, at least one of Q1and Q2is a carbon atom. W is a monocyclic or polycyclic non-aromatic ring structure constituted from 3-40 ring-forming members in addition to Q1and Q2in the formula. The formula between Q1and Q2in the formula denotes a single bond or a double bond. (AAA) R1is a monovalent organic group having 1-20 carbon atoms, a nitro group, a hydroxyl group, an amino group, a thiol group, a cyano group, a carboxyl group or a halogen atom. In a case where multiple R1moieties are present, the multiple R111 is an integer between 0 and 4. Z+ is a monovalent onium cation.)
C07D 307/00 - Composés hétérocycliques contenant des cycles à cinq chaînons comportant un atome d'oxygène comme unique hétéro-atome du cycle
C07D 307/33 - Atomes d'oxygène en position 2, l'atome d'oxygène étant sous la forme céto ou énol non substituée
C07D 317/72 - Composés hétérocycliques contenant des cycles à cinq chaînons comportant deux atomes d'oxygène comme uniques hétéro-atomes du cycle comportant les hétéro-atomes en positions 1, 3 condensés en spiro avec des carbocycles
C07D 321/10 - Cycles à sept chaînons condensés avec des carbocycles ou avec des systèmes carbocycliques
C07D 327/08 - Cycles à six chaînons condensés en [b, e] avec deux carbocycles à six chaînons
C07D 333/46 - Composés hétérocycliques contenant des cycles à cinq chaînons comportant un atome de soufre comme unique hétéro-atome du cycle non condensés avec d'autres cycles substitués sur l'atome de soufre du cycle
C07D 493/02 - Composés hétérocycliques contenant des atomes d'oxygène comme uniques hétéro-atomes dans le système condensé dans lesquels le système condensé contient deux hétérocycles
C08F 20/18 - Esters des alcools ou des phénols monohydriques des phénols ou des alcools contenant plusieurs atomes de carbone avec l'acide acrylique ou l'acide méthacrylique
The present inventors have found that the content ratios of isoalloLCA, 3-oxoLCA, alloLCA, and 3-oxoalloLCA in the feces of centenarians are higher than those of younger ones, and have also identified gut microbiomes peculiar to centenarians involved in the production of these bile acids. Furthermore, it has been found that these bile acids, enzymes involved in the production thereof, and bacteria producing the enzymes reduce the risk of infection with pathogens, prostate cancer, and the like, and are involved in longevity.
C12N 9/04 - Oxydoréductases (1.), p. ex. luciférase agissant sur des groupes CHOH comme donneurs, p. ex. oxydase de glucose, déshydrogénase lactique (1.1)
G01N 33/569 - Tests immunologiquesTests faisant intervenir la formation de liaisons biospécifiquesMatériaux à cet effet pour micro-organismes, p. ex. protozoaires, bactéries, virus
99.
RADIATION-SENSITIVE COMPOSITION AND METHOD OF FORMING RESIST PATTERN
A radiation-sensitive composition includes: a polymer comprising a first structural unit represented by formula (1); and a compound comprising an anion and a radiation-sensitive onium cation. At least one of the polymer and the compound has a ring structure having at least one iodine atom bonded to the ring structure. R1 represents a hydrogen atom, a fluorine atom, a methyl group, or a trifluoromethyl group; L1 represents a single bond, —COO—, or —CONH—; Ar1 represents a group obtained by removing two hydrogen atoms from a substituted or unsubstituted aromatic hydrocarbon ring; and R2 represents an acid-labile group.
A radiation-sensitive composition includes: a polymer comprising a first structural unit represented by formula (1); and a compound comprising an anion and a radiation-sensitive onium cation. At least one of the polymer and the compound has a ring structure having at least one iodine atom bonded to the ring structure. R1 represents a hydrogen atom, a fluorine atom, a methyl group, or a trifluoromethyl group; L1 represents a single bond, —COO—, or —CONH—; Ar1 represents a group obtained by removing two hydrogen atoms from a substituted or unsubstituted aromatic hydrocarbon ring; and R2 represents an acid-labile group.
C08F 212/14 - Monomères contenant un seul radical aliphatique non saturé contenant un cycle substitué par des hétéro-atomes ou des groupes contenant des hétéro-atomes
C08F 220/30 - Esters contenant de l'oxygène en plus de l'oxygène de la fonction carboxyle contenant des cycles aromatiques dans la partie alcool
G03F 7/038 - Composés macromoléculaires rendus insolubles ou sélectivement mouillables
G03F 7/039 - Composés macromoléculaires photodégradables, p. ex. réserves positives sensibles aux électrons
100.
COMPOSITION FOR FORMING RESIST UNDERLAYER FILM, METHOD FOR PRODUCING SEMICONDUCTOR SUBSTRATE, AND POLYMER FOR FORMING RESIST UNDERLAYER FILM
Provided is: a composition for forming a resist underlayer film, the composition being capable of forming a resist underlayer film that is excellent in terms of solvent resistance and pattern rectangularity; a method for producing a semiconductor substrate; and a polymer for forming a resist underlayer film. This composition for forming a resist underlayer film contains: a polymer that has a repeating unit represented by formula (1) or a repeating unit represented by formula (2); and a solvent. (In formula (1), Ar1represents a divalent group that has an aromatic ring having 6 to 20 ring members. RArepresents a substituted or unsubstituted divalent hydrocarbon group having 1 to 20 carbon atoms. In formula (2), Ar1represents a divalent group that has an aromatic ring having 6 to 20 ring members. R1and R3each independently represent a substituted or unsubstituted trivalent hydrocarbon group having 1 to 20 carbon atoms. R2and R4each independently represent a hydroxy group or a monovalent organic group. L1and L2each independently represent a single bond or a divalent linking group. RB represents a divalent organic group having 1 to 20 carbon atoms.)
G03F 7/11 - Matériaux photosensibles caractérisés par des détails de structure, p. ex. supports, couches auxiliaires avec des couches de recouvrement ou des couches intermédiaires, p. ex. couches d'ancrage
