JSR Corporation

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[Owner] JSR Corporation 2,503
Techno Polymer Co., Ltd. 70
JSR Micro Inc. 17
Japan Coloring Co., Ltd. 15
Japan Fine Coatings Co. Ltd. 11
Date
New (last 4 weeks) 18
2025 May (MTD) 2
2025 April 17
2025 March 14
2025 February 17
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IPC Class
G03F 7/004 - Photosensitive materials 546
G03F 7/039 - Macromolecular compounds which are photodegradable, e.g. positive electron resists 507
G03F 7/20 - ExposureApparatus therefor 382
H01L 21/027 - Making masks on semiconductor bodies for further photolithographic processing, not provided for in group or 309
G03F 7/11 - Photosensitive materials characterised by structural details, e.g. supports, auxiliary layers having cover layers or intermediate layers, e.g. subbing layers 241
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NICE Class
01 - Chemical and biological materials for industrial, scientific and agricultural use 104
17 - Rubber and plastic; packing and insulating materials 29
05 - Pharmaceutical, veterinary and sanitary products 14
09 - Scientific and electric apparatus and instruments 13
42 - Scientific, technological and industrial services, research and design 12
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Status
Pending 191
Registered / In Force 2,407
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1.

EUVX

      
Application Number 1853555
Status Registered
Filing Date 2025-03-21
Registration Date 2025-03-21
Owner JSR Corporation (Japan)
NICE Classes  ? 01 - Chemical and biological materials for industrial, scientific and agricultural use

Goods & Services

Chemicals for use in industry; industrial chemicals for use in the manufacture of semiconductors; photoresists; chemical compositions for developing photographs; chemical preparations for use in photography; photographic sensitizers; photographic developers.

2.

CRYSTALLINE THERMOPLASTIC RESIN EXPANDED BEAD, MOLDED ARTICLE OF CRYSTALLINE THERMOPLASTIC RESIN EXPANDED BEADS, AND METHOD FOR PRODUCING SAME

      
Application Number 18835855
Status Pending
Filing Date 2023-02-02
First Publication Date 2025-05-01
Owner JSP CORPORATION (Japan)
Inventor
  • Sakamura, Takumi
  • Ohta, Hajime

Abstract

A molded article of expanded beads is obtained by mutual fusion-bonding of columnar crystalline thermoplastic resin expanded beads each having no through-hole. The molded article ratio of the molded article of crystalline thermoplastic resin expanded beads is 15 times or more and 90 times or less. The molded article of crystalline thermoplastic resin expanded beads has a closed cell content of 90% or more. The molded article of crystalline thermoplastic resin expanded beads has an open cell content of 2% or more and 12% or less.

IPC Classes  ?

  • C08J 9/232 - Forming foamed products by sintering expandable particles

3.

RADIATION-SENSITIVE COMPOSITION, PATTERN FORMATION METHOD, POLYMER, AND COMPOUND

      
Application Number JP2024034915
Publication Number 2025/084117
Status In Force
Filing Date 2024-09-30
Publication Date 2025-04-24
Owner JSR CORPORATION (Japan)
Inventor
  • Watanabe,daichi
  • Itagaki,masafumi
  • Nonoyama,yoshiki
  • Chosa,tomoya

Abstract

The purpose of the present invention is to provide: a radiation sensitive composition which exhibits sensitivity and CDU at satisfactory levels when next generation techniques are used and which can form a resist film in which developing defects are suppressed; and a pattern formation method. Another purpose of the present invention is to provide a polymer and a compound able to be used in the radiation-sensitive composition. The present invention relates to a radiation-sensitive composition which contains: a polymer (A) including a structural unit (I) represented by general formula (1); and a solvent (B). The polymer (A) includes a radiation-sensitive acid-generating structural unit (IV): and/or a radiation-sensitive acid generator (C) is contained in a component other than the polymer (A). An iodo group is contained in at least one component selected from the group consisting of the polymer (A) and the radiation-sensitive acid generator (C). In formula (1), R1is a hydrogen atom, a fluorine atom, a methyl group or a trifluoromethyl group. L1is a single bond or a divalent linking group. Ar denotes a furan ring, a thiophene ring, or a 9- to 20-membered aromatic heterocyclic ring having a furan ring or a thiophene ring. R2is a hydrogen atom or a monovalent organic group having 1-20 carbon atoms. R3is a halogen atom, a hydroxyl group, a cyano group, a nitro group, an amino group, a thiol group or a monovalent organic group having 1-20 carbon atoms. n is an integer between 0 and 4. If the value of n is 2 or more, multiple R3 moieties may be the same as, or different from, each other.

IPC Classes  ?

  • G03F 7/039 - Macromolecular compounds which are photodegradable, e.g. positive electron resists
  • C07D 307/68 - Carbon atoms having three bonds to hetero atoms with at the most one bond to halogen
  • C07D 307/85 - Carbon atoms having three bonds to hetero atoms with at the most one bond to halogen attached in position 2
  • C07D 333/38 - Carbon atoms having three bonds to hetero atoms with at the most one bond to halogen, e.g. ester or nitrile radicals
  • C07D 333/70 - Carbon atoms having three bonds to hetero atoms with at the most one bond to halogen attached in position 2
  • C07D 407/12 - Heterocyclic compounds containing two or more hetero rings, at least one ring having oxygen atoms as the only ring hetero atoms, not provided for by group containing two hetero rings linked by a chain containing hetero atoms as chain links
  • C07D 409/12 - Heterocyclic compounds containing two or more hetero rings, at least one ring having sulfur atoms as the only ring hetero atoms containing two hetero rings linked by a chain containing hetero atoms as chain links
  • C08F 8/12 - Hydrolysis
  • C08F 24/00 - Homopolymers or copolymers of compounds having one or more unsaturated aliphatic radicals, each having only one carbon-to-carbon double bond, and at least one being terminated by a heterocyclic ring containing oxygen
  • C08F 28/00 - Homopolymers or copolymers of compounds having one or more unsaturated aliphatic radicals, each having only one carbon-to-carbon double bond, and at least one being terminated by a bond to sulfur or by a heterocyclic ring containing sulfur
  • G03F 7/004 - Photosensitive materials
  • G03F 7/20 - ExposureApparatus therefor

4.

COREDUAL

      
Serial Number 99144897
Status Pending
Filing Date 2025-04-18
Owner JSP CORPORATION (Japan)
NICE Classes  ?
  • 12 - Land, air and water vehicles; parts of land vehicles
  • 17 - Rubber and plastic; packing and insulating materials

Goods & Services

structural parts for automobiles; vehicle running boards; body panels for vehicles; roof panels for land vehicles semi-processed thermoplastics; plastic wallboards; semi-processed plastics; plastic padding for shipping containers; Thermoplastic foam in the form of cores for use in the manufacture of insulation; Thermoplastic foam in the form of boards for use in the manufacture of insulation; Fiber-reinforced plastic boards being raw material for use in manufacture

5.

METHOD FOR PRODUCING GENE-MODIFIED T CELL POPULATION

      
Application Number 18683815
Status Pending
Filing Date 2022-08-10
First Publication Date 2025-04-17
Owner
  • KEIO UNIVERSITY (Japan)
  • JSR CORPORATION (Japan)
Inventor
  • Kawakami, Yutaka
  • Wakui, Seiki
  • Ueno, Masaru
  • Aoyama, Ryo
  • Sekine, Hitoshi

Abstract

Provided is a method of producing a gene-modified T cell population, including mixing a cell population containing T cells with beads each having bound thereto a virus containing a target gene to introduce the target gene into each of the cells of the cell population, wherein the cell population containing the T cells is cultured in a solution containing a CD3 signal activator that is present without being immobilized on a solid phase.

IPC Classes  ?

  • C12N 5/0783 - T cellsNK cellsProgenitors of T or NK cells
  • C12N 5/00 - Undifferentiated human, animal or plant cells, e.g. cell linesTissuesCultivation or maintenance thereofCulture media therefor
  • C12N 15/86 - Viral vectors

6.

METHOD FOR MANUFACTURING SEMICONDUCTOR SUBSTRATE

      
Application Number JP2024035444
Publication Number 2025/079496
Status In Force
Filing Date 2024-10-03
Publication Date 2025-04-17
Owner JSR CORPORATION (Japan)
Inventor
  • Serizawa,ryuichi
  • Kimata,hironori
  • Ozaki,yuki

Abstract

Provided is a method for manufacturing a semiconductor substrate that has excellent embedding properties, in which a composition for forming a metal-containing film is embedded in a substrate pattern. The method for manufacturing the semiconductor substrate comprises: a step for coating a substrate with a film-forming composition; and a step for performing, on the coating film formed in the film-forming composition coating step, at least one process selected from the group consisting of exposure to radiation and exposure to plasma. The film-forming composition contains a metal compound composed of at least a metal atom and an organic acid, and a solvent.

IPC Classes  ?

7.

JSR NSC

      
Application Number 1849865
Status Registered
Filing Date 2025-02-27
Registration Date 2025-02-27
Owner JSR CORPORATION (Japan)
NICE Classes  ? 01 - Chemical and biological materials for industrial, scientific and agricultural use

Goods & Services

Chemical source material for the deposition of thin films upon semiconductor wafers for the manufacture of semiconductors; industrial chemicals for use in the manufacture of semiconductors; industrial chemicals; adhesives for industrial purposes; chemical preparations for use in photography; photoresists; unprocessed artificial resins as raw materials in the form of powders, liquids or pastes; unprocessed plastics in primary form.

8.

POLYMER, COMPOSITION, CURED PRODUCT, LAMINATED BODY, AND ELECTRONIC COMPONENT

      
Application Number 18834042
Status Pending
Filing Date 2023-01-30
First Publication Date 2025-04-17
Owner JSR CORPORATION (Japan)
Inventor
  • Kadota, Toshiaki
  • Iizuka, Shunsuke
  • Okamoto, Koichi
  • Nishino, Kenta

Abstract

A composition includes a polymer containing a repeating unit represented by Formula (1). —N(R′)—R3—N(R′)— is a structure derived from a dimer diamine that is unsubstituted or substituted by a substituent, R′, R1, and R2 each are independently a hydrogen atom, a halogen atom, a hydrocarbon group that is unsubstituted or substituted by a substituent and has 1 to 20 carbon atoms, a heterocyclic aliphatic group that is unsubstituted or substituted by a substituent and has 3 to 20 carbon atoms, or a heterocyclic aromatic group that is unsubstituted or substituted by a substituent and has 3 to 20 carbon atoms, and —NR1R2 may be a nitrogen-containing heterocyclic group which has 5 to 20 ring-constituting atoms and in which R1 and R2 are bonded to each other. A composition includes a polymer containing a repeating unit represented by Formula (1). —N(R′)—R3—N(R′)— is a structure derived from a dimer diamine that is unsubstituted or substituted by a substituent, R′, R1, and R2 each are independently a hydrogen atom, a halogen atom, a hydrocarbon group that is unsubstituted or substituted by a substituent and has 1 to 20 carbon atoms, a heterocyclic aliphatic group that is unsubstituted or substituted by a substituent and has 3 to 20 carbon atoms, or a heterocyclic aromatic group that is unsubstituted or substituted by a substituent and has 3 to 20 carbon atoms, and —NR1R2 may be a nitrogen-containing heterocyclic group which has 5 to 20 ring-constituting atoms and in which R1 and R2 are bonded to each other.

IPC Classes  ?

  • C09D 179/02 - Polyamines
  • C08F 290/06 - Polymers provided for in subclass
  • C08G 73/02 - Polyamines
  • C08G 77/452 - Block- or graft-polymers containing polysiloxane sequences containing nitrogen-containing sequences
  • C09D 151/08 - Coating compositions based on graft polymers in which the grafted component is obtained by reactions only involving carbon-to-carbon unsaturated bondsCoating compositions based on derivatives of such polymers grafted on to macromolecular compounds obtained otherwise than by reactions only involving carbon-to-carbon unsaturated bonds
  • C09D 183/10 - Block or graft copolymers containing polysiloxane sequences

9.

RESIST UNDERLAYER FILM-FORMING COMPOSITION AND METHOD FOR MANUFACTURING SEMICONDUCTOR SUBSTRATE

      
Application Number JP2024033501
Publication Number 2025/079408
Status In Force
Filing Date 2024-09-19
Publication Date 2025-04-17
Owner JSR CORPORATION (Japan)
Inventor
  • Dobashi,masato
  • Dei,satoshi
  • Ehara,kengo
  • Akita,shunpei
  • Hayashi,yuya
  • Hayashi,yukihiro
  • Kasai,tatsuya
  • Kawazu,tomoharu
  • Takada,kazuya

Abstract

Provided are a resist underlayer film-forming composition with which it is possible to form a resist underlayer film having excellent solvent resistance and excellent resist pattern rectangularity, and a method for manufacturing a semiconductor substrate. The resist underlayer film-forming composition contains a polymer having a repeating unit represented by formula (1), and a solvent. (In formula (1), R1represents a hydrogen atom or a substituted or unsubstituted monovalent hydrocarbon group having 1 to 20 carbon atoms. L1represents a 1+n-valent linking group. Ar1represents a monovalent group having an aromatic ring having 6 to 20 ring members. The aromatic ring has at least one halogen atom. n represents an integer of 1 to 3. When n is 2 or more, a plurality of the Ar1s are the same as or different from one another. L1has at least one group (A) selected from the group consisting of a group represented by formula (2-1), a group represented by formula (2-2), a group represented by formula (2-3), a group represented by formula (2-4), a group represented by formula (2-5), a group represented by formula (2-6), a group represented by formula (2-7), and a group represented by formula (2-8).) (In formulae (2-1) to (2-8), R7each independently represent a divalent organic group having 1 to 20 carbon atoms or a single bond. R8, R9, R10, and R13each independently represent a hydrogen atom or a monovalent organic group having 1 to 20 carbon atoms. Cy represents a ring structure constituted together with two carbon atoms in formula (2-2) and having 3 to 20 ring members. R11represents a hydrogen atom, a monovalent organic group having 1 to 20 carbon atoms, or a single bond. R12represents a hydrogen atom or a monovalent organic group having 1 to 20 carbon atoms. ** represents a bond with an atom constituting Cy. Note that if R11is a single bond, R11is combined with **. * represents a bond with an atom constituting L1.)

IPC Classes  ?

  • G03F 7/11 - Photosensitive materials characterised by structural details, e.g. supports, auxiliary layers having cover layers or intermediate layers, e.g. subbing layers
  • C08F 12/32 - Monomers containing only one unsaturated aliphatic radical containing two or more rings
  • G03F 7/20 - ExposureApparatus therefor

10.

RADIATION-SENSITIVE COMPOSITION, PATTERN FORMATION METHOD, AND COMPOUND

      
Application Number JP2024035269
Publication Number 2025/079475
Status In Force
Filing Date 2024-10-02
Publication Date 2025-04-17
Owner JSR CORPORATION (Japan)
Inventor
  • Nemoto,ryuichi
  • Miyao,kensuke
  • Abe,yudai
  • Oshiro,taku

Abstract

Provided are a radiation-sensitive composition and a pattern formation method that can exhibit, at the time of pattern formation, a sufficient level of sensitivity, LWR performance, pattern rectangularity, development defect suppression, CDU performance, and pattern circularity. This radiation-sensitive composition includes: a polymer that includes a structural unit (I) represented by formula (1); an onium salt that includes an organic acid anion including a cyclic structure, and an onium cation; and a solvent. (In formula (1), R1is a hydrogen atom or a C1-20 monovalent organic group, L is a single bond or a divalent linking group, R2is a C1-5 substituted or unsubstituted monovalent hydrocarbon group, R3is a C1-10 monovalent organic group, a hydroxy group, a nitro group, a cyano group, an amino group, a halogen atom, or a sulfanyl group, in cases in which there are a plurality of R3s present, the plurality of R3s may be the same as or different from each other, and n is an integer from 0 to 10.)

IPC Classes  ?

  • G03F 7/039 - Macromolecular compounds which are photodegradable, e.g. positive electron resists
  • C08F 20/28 - Esters containing oxygen in addition to the carboxy oxygen containing no aromatic rings in the alcohol moiety
  • C08L 33/14 - Homopolymers or copolymers of esters of esters containing halogen, nitrogen, sulfur, or oxygen atoms in addition to the carboxy oxygen
  • G03F 7/004 - Photosensitive materials
  • G03F 7/038 - Macromolecular compounds which are rendered insoluble or differentially wettable
  • G03F 7/20 - ExposureApparatus therefor

11.

RADIATION-SENSITIVE RESIN COMPOSITION AND METHOD OF FORMING RESIST PATTERN

      
Application Number 18906361
Status Pending
Filing Date 2024-10-04
First Publication Date 2025-04-10
Owner JSR CORPORATION (Japan)
Inventor
  • Watanabe, Daichi
  • Tomihama, Munehisa
  • Nishikori, Katsuaki

Abstract

A radiation-sensitive resin composition includes: a first polymer and a compound. A solubility of the first polymer in a developer solution is capable of being altered by an action of an acid. The first polymer includes: a first structural unit containing a partial structure obtained by substituting a hydrogen atom of a carboxy group, a phenolic hydroxy group, or an amide group with a group represented by the following formula (1); and a second structural unit containing a phenolic hydroxy group. The compound includes: a monovalent radiation-sensitive onium cation containing an aromatic ring obtained by substituting at least one hydrogen atom with a fluorine atom or a fluorine atom-containing group; and a monovalent organic acid anion. A radiation-sensitive resin composition includes: a first polymer and a compound. A solubility of the first polymer in a developer solution is capable of being altered by an action of an acid. The first polymer includes: a first structural unit containing a partial structure obtained by substituting a hydrogen atom of a carboxy group, a phenolic hydroxy group, or an amide group with a group represented by the following formula (1); and a second structural unit containing a phenolic hydroxy group. The compound includes: a monovalent radiation-sensitive onium cation containing an aromatic ring obtained by substituting at least one hydrogen atom with a fluorine atom or a fluorine atom-containing group; and a monovalent organic acid anion.

IPC Classes  ?

  • G03F 7/039 - Macromolecular compounds which are photodegradable, e.g. positive electron resists
  • C08F 212/14 - Monomers containing only one unsaturated aliphatic radical containing one ring substituted by hetero atoms or groups containing hetero atoms
  • C08F 220/18 - Esters of monohydric alcohols or phenols of phenols or of alcohols containing two or more carbon atoms with acrylic or methacrylic acids
  • C08F 220/22 - Esters containing halogen
  • G03F 7/00 - Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printed surfacesMaterials therefor, e.g. comprising photoresistsApparatus specially adapted therefor

12.

RADIATION-SENSITIVE RESIN COMPOSITION AND METHOD OF FORMING RESIST PATTERN

      
Application Number 18985206
Status Pending
Filing Date 2024-12-18
First Publication Date 2025-04-10
Owner JSR CORPORATION (Japan)
Inventor
  • Omiya, Takuya
  • Nishikori, Katsuaki
  • Kiriyama, Kazuya
  • Matsumura, Yuushi
  • Terada, Nozomi

Abstract

A radiation-sensitive resin composition includes a polymer, solubility of which in a developer solution is capable of being altered by an action of an acid, and which has a first structural unit represented by the following formula (1); a radiation-sensitive acid generating agent; and an acid diffusion control agent having a monovalent radiation-sensitive onium cation and a monovalent organic acid anion. A radiation-sensitive resin composition includes a polymer, solubility of which in a developer solution is capable of being altered by an action of an acid, and which has a first structural unit represented by the following formula (1); a radiation-sensitive acid generating agent; and an acid diffusion control agent having a monovalent radiation-sensitive onium cation and a monovalent organic acid anion.

IPC Classes  ?

  • G03F 7/004 - Photosensitive materials
  • C08F 2/50 - Polymerisation initiated by wave energy or particle radiation by ultraviolet or visible light with sensitising agents
  • C08F 20/10 - Esters

13.

SEMICONDUCTOR SUBSTRATE MANUFACTURING METHOD, AND RESIST BASE FILM FORMING COMPOSITION

      
Application Number 18910163
Status Pending
Filing Date 2024-10-09
First Publication Date 2025-04-03
Owner JSR CORPORATION (Japan)
Inventor
  • Komatsu, Hiroyuki
  • Dobashi, Masato
  • Tatsubo, Daiki
  • Yoshinaka, Sho
  • Akita, Shunpei
  • Dei, Satoshi
  • Yoneda, Eiji
  • Ehara, Kengo

Abstract

A method for manufacturing a semiconductor substrate includes: applying a composition for forming a resist underlayer film directly or indirectly to a substrate to form a resist underlayer film; applying a composition for forming a resist film to the resist underlayer film to form a resist film; exposing the resist film to radiation; and developing at least the exposed resist film. The composition for forming a resist underlayer film includes a polymer and a solvent. The polymer includes a repeating unit (1) which includes an organic sulfonic acid anion moiety and an onium cation moiety.

IPC Classes  ?

  • G03F 7/039 - Macromolecular compounds which are photodegradable, e.g. positive electron resists
  • C08F 220/30 - Esters containing oxygen in addition to the carboxy oxygen containing aromatic rings in the alcohol moiety
  • C08F 220/38 - Esters containing sulfur
  • C08G 61/12 - Macromolecular compounds containing atoms other than carbon in the main chain of the macromolecule
  • G03F 7/00 - Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printed surfacesMaterials therefor, e.g. comprising photoresistsApparatus specially adapted therefor
  • G03F 7/004 - Photosensitive materials
  • G03F 7/038 - Macromolecular compounds which are rendered insoluble or differentially wettable
  • H01L 21/027 - Making masks on semiconductor bodies for further photolithographic processing, not provided for in group or

14.

THERMOPLASTIC POLYMER FOAMED PARTICLE, THERMOPLASTIC POLYMER FOAMED PARTICLE MOLDED BODY, AND IDENTIFICATION METHOD FOR THERMOPLASTIC POLYMER FOAMED PARTICLE OR THERMOPLASTIC POLYMER FOAMED PARTICLE MOLDED BODY

      
Application Number JP2024030554
Publication Number 2025/069866
Status In Force
Filing Date 2024-08-27
Publication Date 2025-04-03
Owner
  • JSP CORPORATION (Japan)
  • JSP INTERNATIONAL SARL (France)
Inventor
  • Antonio Pereira
  • Valentin Kopf
  • Hira Akinobu

Abstract

Provided are: thermoplastic polymer foamed particles in which it is possible to identify the foamed particles themselves; and a thermoplastic polymer foamed particle molded body that, by being formed from the identifiable thermoplastic polymer foamed particles, can be identified without ruining the aesthetics thereof. Further provided is an identification method for the thermoplastic polymer foamed particles and/or the thermoplastic polymer foamed particle molded body. Thermoplastic polymer foamed particles (100) exhibit a light emission reaction derived from a light-emitting rare-earth element (10) through irradiation with electromagnetic waves. This thermoplastic polymer foamed particle molded body is formed through in-mold molding using the thermoplastic polymer foamed particles (100) and thereby exhibits a light emission reaction. This identification method for the thermoplastic polymer foamed particles or the thermoplastic polymer foamed particle molded body comprises: i) an electromagnetic wave irradiation step for irradiating the surfaces of the thermoplastic polymer foamed particles or the thermoplastic polymer foamed particle molded body with electromagnetic waves; and ii) a detection step for detecting, by using a detection device, a light emission reaction that is derived from a light-emitting rare-earth element and that occurs through the irradiating with the electromagnetic waves to obtain a light emission spectrum. A first method of the identification method further comprises iii-1) an identification step for observing the contrast between the light emission spectrum and a blank spectrum in which the light emission reaction derived from the light-emitting rare-earth element is not exhibited. A second method of the identification method further comprises iii-2) an identification step for comparing the light emission spectrum with a preset standard light emission spectrum in which the light emission reaction derived from the light-emitting rare-earth element is exhibited.

IPC Classes  ?

  • C08J 9/18 - Making expandable particles by impregnating polymer particles with the blowing agent
  • B29C 44/00 - Shaping by internal pressure generated in the material, e.g. swelling or foaming
  • B29C 44/44 - Feeding the material to be shaped into a closed space, i.e. to make articles of definite length in the form of expandable particles or beads

15.

RADIATION-SENSITIVE COMPOSITION, PATTERN FORMATION METHOD, AND ONIUM SALT COMPOUND

      
Application Number JP2024032863
Publication Number 2025/070119
Status In Force
Filing Date 2024-09-13
Publication Date 2025-04-03
Owner JSR CORPORATION (Japan)
Inventor
  • Nemoto,ryuichi
  • Miyao,kensuke
  • Okazaki,satoshi
  • Inami,hajime
  • Abe,yudai

Abstract

The present invention provides a radiation-sensitive composition with which it is possible to from a resist film capable of exhibiting sensitivity, LWR performance, pattern rectangularity, CDU, pattern circularity, MEEF, and DOF at sufficient levels, and a pattern formation method. The radiation-sensitive composition contains: a first onium salt compound represented by formula (1); at least one type of second onium salt compound selected from the group consisting of a carboxylate compound represented by formula (2) and a carboxylic acid intramolecular salt compound represented by formula (3); a polymer including a structure unit having an acid dissociable group; and a solvent. (In formula (1), A is a (1+n)-valent organic group having 1 to 40 carbon atoms. Rf1and Rf2are each independently a hydrogen atom, a monovalent organic group, a fluorine atom, or a monovalent fluorinated hydrocarbon group. If a plurality of Rf1s and a plurality of Rf2s are present, the plurality of Rf1s and the plurality of Rf211 +is a radiation-sensitive onium cation.) (In formula (2), R122 +is an organic cation.) (In formula (3), R233 + is a monovalent organic onium cation.)

IPC Classes  ?

  • G03F 7/004 - Photosensitive materials
  • C08F 20/26 - Esters containing oxygen in addition to the carboxy oxygen
  • G03F 7/20 - ExposureApparatus therefor
  • G03F 7/039 - Macromolecular compounds which are photodegradable, e.g. positive electron resists

16.

RADIATION-SENSITIVE COMPOSITION AND METHOD FOR FORMING RESIST PATTERN

      
Application Number JP2024028429
Publication Number 2025/069728
Status In Force
Filing Date 2024-08-08
Publication Date 2025-04-03
Owner JSR CORPORATION (Japan)
Inventor Maruyama Ken

Abstract

This radiation-sensitive composition contains: a polymer whose solubility with respect to a developer changes due to the action of an acid; and a compound having an anion and a radiation-sensitive onium cation, wherein the polymer has a structural unit including a group that generates sulfonic acid due to the action of radiation, the polymer includes an iodine group, and at least one of the anion and the radiation-sensitive onium cation includes an acid-dissociable group.

IPC Classes  ?

  • G03F 7/004 - Photosensitive materials
  • C08F 22/24 - Esters containing sulfur
  • G03F 7/20 - ExposureApparatus therefor
  • G03F 7/039 - Macromolecular compounds which are photodegradable, e.g. positive electron resists

17.

RESIN COMPOSITION, CURED ARTICLE, PREPREG, COPPER-CLAD LAMINATE BOARD, INTERLAYER INSULATION FILM, AND COMPOUND

      
Application Number JP2024031110
Publication Number 2025/069916
Status In Force
Filing Date 2024-08-30
Publication Date 2025-04-03
Owner JSR CORPORATION (Japan)
Inventor
  • Kawashima Naoyuki
  • Kadota Toshiaki
  • Doi Takashi
  • Satonaka Eri
  • Higuchi Tetsuya

Abstract

Provided are: a resin composition comprising a compound (A) that comprises at least one compound selected from the group consisting of a compound (A1) having two or more partial structures represented by formula (1) and a compound (A2) represented by formula (2) and a polymer (B) having a group crosslinkable with the compound (A) and an aromatic ring; a cured article; a prepreg; a copper-clad laminate board; an interlayer insulation film; and a compound. The explanation for each substituent in the formulae is as described in the description.

IPC Classes  ?

  • C08L 101/02 - Compositions of unspecified macromolecular compounds characterised by the presence of specified groups
  • C08F 290/06 - Polymers provided for in subclass
  • C08F 290/14 - Polymers provided for in subclass
  • C08G 65/40 - Macromolecular compounds obtained by reactions forming an ether link in the main chain of the macromolecule from hydroxy compounds or their metallic derivatives derived from phenols from phenols and other compounds
  • C08J 5/04 - Reinforcing macromolecular compounds with loose or coherent fibrous material
  • C08L 15/00 - Compositions of rubber derivatives
  • C08L 71/10 - Polyethers derived from hydroxy compounds or from their metallic derivatives from phenols
  • H05K 1/03 - Use of materials for the substrate

18.

RADIATION-SENSITIVE COMPOSITION, PATTERN FORMATION METHOD, AND ONIUM SALT COMPOUND

      
Application Number JP2024032894
Publication Number 2025/070124
Status In Force
Filing Date 2024-09-13
Publication Date 2025-04-03
Owner JSR CORPORATION (Japan)
Inventor
  • Nemoto,ryuichi
  • Miyao,kensuke
  • Okazaki,satoshi
  • Inami,hajime
  • Oshiro,taku

Abstract

Provided are a radiation-sensitive composition, a pattern formation method, and an onium salt compound that make it possible to achieve sufficient sensitivity, CDU performance, pattern circularity, development defect suppression, depth of focus, LWR performance, pattern rectangularity, and exposure latitude when a pattern is formed. A radiation-sensitive composition according to the present invention includes: an onium salt compound represented by formula (1); a polymer that includes a structural unit (I) represented by formula (2); and a solvent. (In formula (1), A is a C3–40 (1+n)-valent organic group that includes a cyclic structure. When A includes a straight-chain alkanediyl group, the number of carbons in the straight-chain alkanediyl group is 1 or 2. A does not include a cyclohexylcarbonyloxy structure. Rf1and Rf2are each independently a hydrogen atom, a C1–20 monovalent organic group, a fluorine atom, or a monovalent fluorinated hydrocarbon group. When there are multiple Rf1and Rf2, the Rf1and Rf2are each the same or different. At least one of Rf1and Rf2is a fluorine atom or a monovalent fluorinated hydrocarbon group. m1 is an integer from 1 to 4, inclusive. m2 is 0 or 1. n is an integer from 1 to 3, inclusive. Z+is a monovalent radiation-sensitive onium cation. The number of fluorine atoms in Z+is no more than 8.) (In formula (2), RAis a hydrogen atom, a fluorine atom, a methyl group, or a trifluoromethyl group. L is a single bond or a divalent linking group. W is a monocyclic lactone structure, a monocyclic carbonate structure, a monocyclic sultone structure, a monocyclic sulfone structure, or a monocyclic ether structure. R11is a C1–10 monovalent organic group, a cyano group, a nitro group, a hydroxy group, or an amino group. When there are multiple R11, the R11 are each the same or different. p is an integer from 0 to 3, inclusive. q is 0 or 1.)

IPC Classes  ?

  • G03F 7/004 - Photosensitive materials
  • C08F 20/26 - Esters containing oxygen in addition to the carboxy oxygen
  • G03F 7/20 - ExposureApparatus therefor
  • G03F 7/038 - Macromolecular compounds which are rendered insoluble or differentially wettable
  • G03F 7/039 - Macromolecular compounds which are photodegradable, e.g. positive electron resists

19.

RADIATION-SENSITIVE COMPOSITION AND PATTERN FORMATION METHOD

      
Application Number JP2024032896
Publication Number 2025/070125
Status In Force
Filing Date 2024-09-13
Publication Date 2025-04-03
Owner JSR CORPORATION (Japan)
Inventor
  • Nemoto,ryuichi
  • Miyao,kensuke
  • Okazaki,satoshi
  • Inami,hajime
  • Egawa,fuyuki

Abstract

Provided is a radiation-sensitive composition and a pattern formation method with which sensitivity, LWR performance, pattern rectangularity, CDU performance, pattern circularity, MEEF, and exposure margin can be exhibited at a sufficient level when a pattern is formed. This radiation-sensitive resin composition comprises: a first onium salt compound represented by formula (1), a second onium salt compound represented by formula (2), a polymer containing structural units having an acid-dissociable group, and a solvent. (In formula (1), A is a C1–C40 (1+n)-valent organic group. Rf1and Rf2are each independently a hydrogen atom, a C1–C20 monovalent organic group, a fluorine atom, or a monovalent fluorinated hydrocarbon group. When both Rf1and Rf2are present in pluralities, the plurality of Rf1and Rf2are the same as or different from each other. At least one of Rf1and Rf2is a fluorine atom or a monovalent fluorinated hydrocarbon group. R1and R2are each independently a hydrogen atom, a fluorine atom, or a C1–C20 monovalent organic group. When both R1and R2are present in pluralities, the plurality of R1and R211 +11 +.) (In formula (2), R433 −22 + is a monovalent organic cation.)

IPC Classes  ?

  • G03F 7/004 - Photosensitive materials
  • C08F 20/26 - Esters containing oxygen in addition to the carboxy oxygen
  • G03F 7/20 - ExposureApparatus therefor
  • G03F 7/038 - Macromolecular compounds which are rendered insoluble or differentially wettable
  • G03F 7/039 - Macromolecular compounds which are photodegradable, e.g. positive electron resists

20.

RADIATION-SENSITIVE COMPOSITION, PATTERN FORMATION METHOD, AND POLYMER

      
Application Number JP2024027546
Publication Number 2025/062850
Status In Force
Filing Date 2024-08-01
Publication Date 2025-03-27
Owner JSR CORPORATION (Japan)
Inventor
  • Nonoyama,yoshiki
  • Yokoi,hiroki
  • Yamaguchi,shogo
  • Nishikori,katsuaki
  • Osawa,sosuke

Abstract

The present invention addresses the problem of providing: a radiation-sensitive composition and a pattern formation method with which it is possible to achieve sufficient levels of sensitivity, development contrast, development residue suppression property, and limit resolution property during formation of a pattern; and a polymer which can be used suitably for the radiation-sensitive composition. The radiation-sensitive composition contains: a polymer (A) containing a structural unit that has an acid-dissociable group, a structural unit that has a first organic acid anion (b1) and a first onium cation (c1) and includes a first acid-generating structure capable of generating, when exposed, an acid that induces the dissociation of the acid-dissociable group, and a structural unit that has a second organic acid anion (b2) and a second onium cation (c2) and includes a second acid-generating structure capable of generating, when exposed, an acid that does not induce the dissociation of the acid-dissociable group; and a solvent (B). The polymer (A) includes a partial structure represented by formula (i). (In formula (i), Ar represents a 5- to 20-membered aromatic ring having a valency of (m1 + m2 + m3 +1); X1represents a hydroxy group, a carboxy group, a sulfonic acid group, or a mercapto group, wherein, when there are a plurality of X1's, the plurality of X1's are the same as or different from each other; R1represents an acid-dissociable group or a non-acid-dissociable group, wherein, when there is one R1, the R1represents an acid-dissociable group, and when there are a plurality of R1's, at least one of the plurality of R1's represents an acid-dissociable group, and when there are a plurality of R1's, the plurality of R1's are the same as or different from each other; R2represents a halogen atom, a cyano group, a nitro group, or a monovalent organic group (excluding -COOR1), wherein, when there are a plurality of R2's, the plurality of R2's are the same as or different from each other; m1 represents an integer of 1-5, m2 represents an integer of 0-5, and m3 represents an integer of 0-6, wherein 2 ≤ m1 + m2; and "*" represents a bond to another structure in the polymer (A).)

IPC Classes  ?

  • G03F 7/004 - Photosensitive materials
  • C08F 212/14 - Monomers containing only one unsaturated aliphatic radical containing one ring substituted by hetero atoms or groups containing hetero atoms
  • C08F 220/10 - Esters
  • G03F 7/20 - ExposureApparatus therefor
  • G03F 7/039 - Macromolecular compounds which are photodegradable, e.g. positive electron resists

21.

RADIATION-SENSITIVE COMPOSITION, PATTERN FORMATION METHOD, AND POLYMER

      
Application Number JP2024025965
Publication Number 2025/057562
Status In Force
Filing Date 2024-07-19
Publication Date 2025-03-20
Owner JSR CORPORATION (Japan)
Inventor
  • Nonoyama,yoshiki
  • Yokoi,hiroki
  • Yamaguchi,shogo
  • Osawa,sosuke

Abstract

Provided are a radiation-sensitive composition and pattern formation method that can exhibit satisfactory levels of sensitivity, CDU, and development defect suppression during pattern formation; and a polymer that can be advantageously used in said radiation-sensitive composition. This radiation-sensitive composition contains: a polymer (A) comprising a structural unit (I) having an acid-dissociable group, a structural unit (II) that has a first organic acid anion (b1) and a first onium cation (c1) and that contains a first acid-generating structure that upon exposure generates an acid that induces dissociation of the acid-dissociable group, and a structural unit (III) that has a second organic acid anion (b2) and a second onium cation (c2) and that contains a second acid-generating structure that upon exposure generates an acid that does not induce dissociation of the acid-dissociable group; and a solvent (B). The polymer (A) has at least one alcoholic hydroxyl group, and the second onium cation (c2) is a radiation-sensitive onium cation.

IPC Classes  ?

  • G03F 7/004 - Photosensitive materials
  • C08F 212/14 - Monomers containing only one unsaturated aliphatic radical containing one ring substituted by hetero atoms or groups containing hetero atoms
  • C08F 220/18 - Esters of monohydric alcohols or phenols of phenols or of alcohols containing two or more carbon atoms with acrylic or methacrylic acids
  • G03F 7/20 - ExposureApparatus therefor
  • G03F 7/039 - Macromolecular compounds which are photodegradable, e.g. positive electron resists

22.

METHOD FOR MANUFACTURING ELECTROCONDUCTIVE FILM, TOUCH PANEL, AND DISPLAY PANEL

      
Application Number JP2024029040
Publication Number 2025/057653
Status In Force
Filing Date 2024-08-15
Publication Date 2025-03-20
Owner JSR CORPORATION (Japan)
Inventor
  • Yasuda,hiroyuki
  • Katsui,hiromitsu
  • Oono,ryuuzou
  • Yasuike,nobuo

Abstract

Provided are an organic resin material that makes it possible to uniformly fix an electroconductive carbon material over the entirety of an electroconductive film formation region, a method for manufacturing an electroconductive film using the organic resin material, and a touch panel and a display panel each comprising an electroconductive film manufactured by means of the manufacturing method. The method comprises: a step (A) for applying an organic resin material containing a polymer obtained by reacting an aliphatic tetracarboxylic acid dianhydride with an aliphatic diamine onto a base material to form an organic resin layer; a step (B) for applying a dispersion liquid containing a dispersant and carbon nanotubes onto the organic resin layer after the step (A) to form a coating film; a step (C) for drying the coating film after the step (B); and a step (D) for depositing a dispersant extraction liquid after the step (C), thereby removing the dispersant from the coating film.

IPC Classes  ?

  • H01B 13/00 - Apparatus or processes specially adapted for manufacturing conductors or cables
  • B05D 1/36 - Successively applying liquids or other fluent materials, e.g. without intermediate treatment
  • B05D 3/10 - Pretreatment of surfaces to which liquids or other fluent materials are to be appliedAfter-treatment of applied coatings, e.g. intermediate treating of an applied coating preparatory to subsequent applications of liquids or other fluent materials by other chemical means
  • B05D 7/24 - Processes, other than flocking, specially adapted for applying liquids or other fluent materials to particular surfaces or for applying particular liquids or other fluent materials for applying particular liquids or other fluent materials

23.

SUBSTRATE FOR SEMICONDUCTOR PRODUCTION, METHOD FOR PRODUCING SUBSTRATE FOR SEMICONDUCTOR PRODUCTION, AND METHOD FOR PRODUCING SEMICONDUCTOR SUBSTRATE

      
Application Number JP2024031111
Publication Number 2025/053057
Status In Force
Filing Date 2024-08-30
Publication Date 2025-03-13
Owner JSR CORPORATION (Japan)
Inventor
  • Yamada,shuhei
  • Yoneda,eiji

Abstract

The present invention provides: a substrate for semiconductor production which is excellent in suppression of collapse of a resist pattern; a method for producing a substrate for semiconductor production; and a method for producing a semiconductor substrate. Provided is a substrate for semiconductor production comprising a substrate that has a thin film, wherein the thin film has a group derived from a compound represented by formula (1). (In formula (1), R1 is an C1-40 n-valent organic group. n is an integer of 1-4.)

IPC Classes  ?

  • G03F 7/11 - Photosensitive materials characterised by structural details, e.g. supports, auxiliary layers having cover layers or intermediate layers, e.g. subbing layers
  • G03F 7/004 - Photosensitive materials
  • G03F 7/09 - Photosensitive materials characterised by structural details, e.g. supports, auxiliary layers
  • G03F 7/20 - ExposureApparatus therefor
  • H01L 21/027 - Making masks on semiconductor bodies for further photolithographic processing, not provided for in group or

24.

RADIATION-SENSITIVE RESIN COMPOSITION AND METHOD FOR FORMING PATTERN

      
Application Number 18953228
Status Pending
Filing Date 2024-11-20
First Publication Date 2025-03-13
Owner JSR CORPORATION (Japan)
Inventor
  • Nemoto, Ryuichi
  • Miyake, Masayuki
  • Inami, Hajime
  • Furukawa, Tsuyoshi
  • Otsuka, Noboru
  • Miyao, Kensuke

Abstract

A radiation-sensitive resin composition includes: an onium salt compound represented by formula (1), a resin including a structural unit having an acid-dissociable group, and an alcohol-based solvent having a boiling point of 90° C. or higher. R1 is a substituted or unsubstituted monovalent hydrocarbon group or a group including a divalent hetero atom-containing group between two adjacent carbon atoms of the hydrocarbon group; R2 and R3 are each independently a hydrogen atom or a monovalent hydrocarbon group, one of Rf11 and Rf12 is a fluorine atom, and the other is a fluorine atom or a monovalent fluorinated hydrocarbon group, m1 is an integer of 1 to 3; m2 is an integer of 0 to 8; and Z1+ represents a monovalent radiation-sensitive onium cation. A radiation-sensitive resin composition includes: an onium salt compound represented by formula (1), a resin including a structural unit having an acid-dissociable group, and an alcohol-based solvent having a boiling point of 90° C. or higher. R1 is a substituted or unsubstituted monovalent hydrocarbon group or a group including a divalent hetero atom-containing group between two adjacent carbon atoms of the hydrocarbon group; R2 and R3 are each independently a hydrogen atom or a monovalent hydrocarbon group, one of Rf11 and Rf12 is a fluorine atom, and the other is a fluorine atom or a monovalent fluorinated hydrocarbon group, m1 is an integer of 1 to 3; m2 is an integer of 0 to 8; and Z1+ represents a monovalent radiation-sensitive onium cation.

IPC Classes  ?

  • G03F 7/029 - Inorganic compoundsOnium compoundsOrganic compounds having hetero atoms other than oxygen, nitrogen or sulfur
  • G03F 7/004 - Photosensitive materials

25.

METHOD FOR MANUFACTURING SURFACE-TREATED SUBSTRATE, METHOD FOR SELECTIVELY MODIFYING SUBSTRATE SURFACE, AND COMPOSITION FOR SEMICONDUCTOR TREATMENT

      
Application Number JP2024024786
Publication Number 2025/052776
Status In Force
Filing Date 2024-07-09
Publication Date 2025-03-13
Owner JSR CORPORATION (Japan)
Inventor
  • Komatsu, Hiroyuki
  • Suhara, Ryou
  • Hagi, Shin-Ichirou
  • Yamada, Shota
  • Akagi, Soichiro
  • Mori, Kosuke

Abstract

A method for manufacturing a surface-treated substrate according to the present invention includes a step for applying a composition to the surface of a substrate including a first region and a second region different in material from the first region to selectively modify the surface of the substrate. The composition contains: compound (A) that is at least one compound selected from the group consisting of a compound represented by formula (1), a compound represented by formula (2), and a compound represented by formula (3); and 1 mass% or more of water with respect to the total amount of the composition. R1, R4, and R8 are each independently a monovalent chain group having 9 or more carbon atoms.

IPC Classes  ?

  • H01L 21/28 - Manufacture of electrodes on semiconductor bodies using processes or apparatus not provided for in groups

26.

RADIATION-SENSITIVE RESIN COMPOSITION AND METHOD FOR FORMING PATTERN

      
Application Number 18951794
Status Pending
Filing Date 2024-11-19
First Publication Date 2025-03-06
Owner JSR CORPORATION (Japan)
Inventor
  • Nemoto, Ryuichi
  • Miyake, Masayuki
  • Inami, Hajime
  • Furukawa, Tsuyoshi
  • Otsuka, Noboru
  • Miyao, Kensuke

Abstract

A radiation-sensitive resin composition includes: a first onium salt compound represented by formula (1); a second onium salt compound represented by formula (2); a resin including a structural unit having an acid-dissociable group; and a solvent. R1 is a substituted or unsubstituted monovalent hydrocarbon group or the like; R2 and R3 are each independently a hydrogen atom or a monovalent hydrocarbon group; one of Rf11 and Rf12 is a fluorine atom, and the other is a fluorine atom or a monovalent fluorinated hydrocarbon group; and Z1+ represents a monovalent radiation-sensitive onium cation. R4 is a monovalent organic group including a cyclic structure; Rf21 and Rf22 each independently represent a fluorine atom or a monovalent fluorinated hydrocarbon group; and Z2+ represents a monovalent radiation-sensitive onium cation. A radiation-sensitive resin composition includes: a first onium salt compound represented by formula (1); a second onium salt compound represented by formula (2); a resin including a structural unit having an acid-dissociable group; and a solvent. R1 is a substituted or unsubstituted monovalent hydrocarbon group or the like; R2 and R3 are each independently a hydrogen atom or a monovalent hydrocarbon group; one of Rf11 and Rf12 is a fluorine atom, and the other is a fluorine atom or a monovalent fluorinated hydrocarbon group; and Z1+ represents a monovalent radiation-sensitive onium cation. R4 is a monovalent organic group including a cyclic structure; Rf21 and Rf22 each independently represent a fluorine atom or a monovalent fluorinated hydrocarbon group; and Z2+ represents a monovalent radiation-sensitive onium cation.

IPC Classes  ?

  • G03F 7/029 - Inorganic compoundsOnium compoundsOrganic compounds having hetero atoms other than oxygen, nitrogen or sulfur
  • G03F 7/004 - Photosensitive materials

27.

RADIATION-SENSITIVE RESIN COMPOSITION AND METHOD FOR FORMING PATTERN

      
Application Number 18951861
Status Pending
Filing Date 2024-11-19
First Publication Date 2025-03-06
Owner JSR CORPORATION (Japan)
Inventor
  • Nemoto, Ryuichi
  • Miyake, Masayuki
  • Inami, Hajime
  • Furukawa, Tsuyoshi
  • Otsuka, Noboru
  • Miyao, Kensuke

Abstract

A radiation-sensitive resin composition includes: a first onium salt compound represented by formula (1); a second onium salt compound represented by formula (2); a resin including an acid-dissociable group; and a solvent. R1 is a substituted or unsubstituted monovalent hydrocarbon group or the like; R2 and R3 are each independently a hydrogen atom, a fluorine atom, or the like; and Z+ represents a monovalent radiation-sensitive onium cation. R4 is a monovalent organic group; one of Rf21 and Rf22 is a fluorine atom, and the other is a fluorine atom or a monovalent fluorinated hydrocarbon group; Ar is a monovalent organic group including an aromatic ring; R5, R6, R7, and R8 each independently represent a hydrogen atom, a hydroxy group, a halogen atom, or a monovalent organic group; and X is a single bond or a divalent hetero atom-containing group. A radiation-sensitive resin composition includes: a first onium salt compound represented by formula (1); a second onium salt compound represented by formula (2); a resin including an acid-dissociable group; and a solvent. R1 is a substituted or unsubstituted monovalent hydrocarbon group or the like; R2 and R3 are each independently a hydrogen atom, a fluorine atom, or the like; and Z+ represents a monovalent radiation-sensitive onium cation. R4 is a monovalent organic group; one of Rf21 and Rf22 is a fluorine atom, and the other is a fluorine atom or a monovalent fluorinated hydrocarbon group; Ar is a monovalent organic group including an aromatic ring; R5, R6, R7, and R8 each independently represent a hydrogen atom, a hydroxy group, a halogen atom, or a monovalent organic group; and X is a single bond or a divalent hetero atom-containing group.

IPC Classes  ?

  • G03F 7/029 - Inorganic compoundsOnium compoundsOrganic compounds having hetero atoms other than oxygen, nitrogen or sulfur
  • G03F 7/004 - Photosensitive materials

28.

RADIATION-SENSITIVE RESIN COMPOSITION AND METHOD FOR FORMING PATTERN

      
Application Number 18952057
Status Pending
Filing Date 2024-11-19
First Publication Date 2025-03-06
Owner JSR CORPORATION (Japan)
Inventor
  • Nemoto, Ryuichi
  • Miyake, Masayuki
  • Inami, Hajime
  • Furukawa, Tsuyoshi
  • Otsuka, Noboru
  • Miyao, Kensuke

Abstract

A radiation-sensitive resin composition includes: a first onium salt compound represented by formula (1); a second onium salt compound represented by formula (2); a resin including a structural unit having an acid-dissociable group; and a solvent. R1 is a substituted or unsubstituted monovalent hydrocarbon group or a group including a divalent hetero atom-containing group between two adjacent carbon atoms of the hydrocarbon group; R2 and R3 are each independently a hydrogen atom, a fluorine atom, or the like; and one of Rf11 and Rf12 is a fluorine atom, and the other is a hydrogen atom, a fluorine atom, or a monovalent fluorinated hydrocarbon group. R4 is a monovalent organic group in which neither a fluorine atom nor a fluorinated hydrocarbon group is bonded to an atom adjacent to the sulfur atom. A radiation-sensitive resin composition includes: a first onium salt compound represented by formula (1); a second onium salt compound represented by formula (2); a resin including a structural unit having an acid-dissociable group; and a solvent. R1 is a substituted or unsubstituted monovalent hydrocarbon group or a group including a divalent hetero atom-containing group between two adjacent carbon atoms of the hydrocarbon group; R2 and R3 are each independently a hydrogen atom, a fluorine atom, or the like; and one of Rf11 and Rf12 is a fluorine atom, and the other is a hydrogen atom, a fluorine atom, or a monovalent fluorinated hydrocarbon group. R4 is a monovalent organic group in which neither a fluorine atom nor a fluorinated hydrocarbon group is bonded to an atom adjacent to the sulfur atom.

IPC Classes  ?

  • G03F 7/004 - Photosensitive materials
  • C08F 220/18 - Esters of monohydric alcohols or phenols of phenols or of alcohols containing two or more carbon atoms with acrylic or methacrylic acids
  • C08F 220/28 - Esters containing oxygen in addition to the carboxy oxygen containing no aromatic rings in the alcohol moiety
  • C08F 220/36 - Esters containing nitrogen containing oxygen in addition to the carboxy oxygen
  • G03F 7/00 - Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printed surfacesMaterials therefor, e.g. comprising photoresistsApparatus specially adapted therefor
  • G03F 7/038 - Macromolecular compounds which are rendered insoluble or differentially wettable
  • G03F 7/039 - Macromolecular compounds which are photodegradable, e.g. positive electron resists

29.

PRODUCTION METHOD FOR SEMICONDUCTOR SUBSTRATE AND COMPOSITION FOR RESIST UNDERLAYER FORMATION

      
Application Number JP2024029817
Publication Number 2025/047565
Status In Force
Filing Date 2024-08-22
Publication Date 2025-03-06
Owner JSR CORPORATION (Japan)
Inventor
  • Hirasawa,kengo
  • Tanaka,ryotaro
  • Oka,yuki
  • Yoshinaka,sho

Abstract

The present invention provides: a production method for a semiconductor substrate that makes it possible to form a resist underlayer having excellent pattern rectangularity; and a composition for resist underlayer formation. Provided is a production method for a semiconductor substrate, said method comprising: a step for applying a composition for resist underlayer formation directly or indirectly onto a substrate; a step for applying a composition resist film formation directly or indirectly onto a resist underlayer formed in the step for applying the composition for resist underlayer formation; a step for exposing a resist film formed in the step for applying the composition resist film formation; and a step for developing at least the exposed resist film. The composition for resist underlayer formation contains a compound and a solvent. The compound comprises -ORA, where RAis a hydrogen atom, a C1-10 monovalent heteroatom-containing group, or a C1-10 monovalent organic group (excluding C1-10 monovalent heteroatom-containing groups). Among the structures constituting RA, when the proportion of hydrogen atoms is represented as x, the proportion of the C1-10 monovalent heteroatom-containing group is represented as y, and the proportion of the C1-10 monovalent organic group is represented as z, in the entirety of the compound, x+y+z=100, and the relations 20≤x≤95 and 5≤y≤80 are satisfied. The compound is a polymer which has a repeating unit represented by formula (1), an aromatic-ring-containing compound which has a molecular weight of 750-3,000 and which comprises -ORA, or a combination of these. (In formula (1), Ar1is a divalent group having a 5- to 40-membered aromatic ring. R0is a hydrogen atom or a C1-40 monovalent organic group. R1is a C1-40 monovalent organic group. At least one selected from the group consisting of Ar1, R0, and R1has -ORA.)

IPC Classes  ?

  • G03F 7/11 - Photosensitive materials characterised by structural details, e.g. supports, auxiliary layers having cover layers or intermediate layers, e.g. subbing layers
  • C08G 61/10 - Macromolecular compounds containing only carbon atoms in the main chain of the macromolecule, e.g. polyxylylenes only aromatic carbon atoms, e.g. polyphenylenes

30.

PHOTOSENSITIVE COMPOSITION, CURED PRODUCT, METHOD FOR PRODUCING SAME, LIQUID CRYSTAL DEVICE, SEMICONDUCTOR DEVICE, POLYMER, AND COMPOUND

      
Application Number JP2024030378
Publication Number 2025/047698
Status In Force
Filing Date 2024-08-27
Publication Date 2025-03-06
Owner JSR CORPORATION (Japan)
Inventor
  • Murakami, Yoshitaka
  • Okada, Takashi
  • Satou, Mitsuo

Abstract

This photosensitive composition contains: a polymer derived from a monomer having a C1-C3 halogenated alkyl group containing at least one hydrogen atom, and including a structural unit (a1) having a hydroxyl group; and a photosensitive compound.

IPC Classes  ?

  • G03F 7/023 - Macromolecular quinonediazidesMacromolecular additives, e.g. binders
  • C08G 73/10 - PolyimidesPolyester-imidesPolyamide-imidesPolyamide acids or similar polyimide precursors
  • G03F 7/004 - Photosensitive materials
  • G03F 7/20 - ExposureApparatus therefor

31.

ARX

      
Application Number 1843142
Status Registered
Filing Date 2025-01-31
Registration Date 2025-01-31
Owner JSR Corporation (Japan)
NICE Classes  ? 01 - Chemical and biological materials for industrial, scientific and agricultural use

Goods & Services

Chemicals for use in industry; industrial chemicals for use in the manufacture of semiconductors; photoresists; chemical compositions for developing photographs; chemical preparations for use in photography; photographic sensitizers; photographic developers.

32.

CELL ADHESIVE PARTICLE AND PARTICLE PRODUCTION METHOD

      
Application Number JP2024024619
Publication Number 2025/047128
Status In Force
Filing Date 2024-07-08
Publication Date 2025-03-06
Owner JSR CORPORATION (Japan)
Inventor
  • Kikuchi, Masahiro
  • Kobayashi, Kunihiko
  • Sakaguchi, Sayaka
  • Tomita, Koki
  • Kawabata, Shingo

Abstract

The present invention provides particles having excellent cell adhesiveness. Cell adhesive particles according to the present invention each contain, in a molecule, a structural unit having at least one selected from groups represented by formula (1) and groups represented by formula (2). [In formula (1), R1represents an alkanediyl group having 2-10 carbon atoms, R2and R3each independently represent a hydrogen atom or an alkyl group having 1-10 carbon atoms, and * represents a binding site.] [In formula (2), R4represents an alkanediyl group having 2-10 carbon atoms, R5-R7each independently represent a hydrogen atom or an alkyl group having 1-10 carbon atoms, X- represents a counter anion, and * represents a binding site.]

IPC Classes  ?

  • C12M 3/00 - Tissue, human, animal or plant cell, or virus culture apparatus
  • C08F 2/18 - Suspension polymerisation
  • C08F 20/12 - Esters of monohydric alcohols or phenols

33.

RADIATION-SENSITIVE COMPOSITION AND PATTERN FORMATION METHOD

      
Application Number JP2024026468
Publication Number 2025/047218
Status In Force
Filing Date 2024-07-24
Publication Date 2025-03-06
Owner JSR CORPORATION (Japan)
Inventor
  • Nonoyama,yoshiki
  • Yokoi,hiroki
  • Yamaguchi,shogo
  • Osawa,sosuke

Abstract

Provided are a radiation-sensitive composition and a pattern formation method capable of exhibiting, at sufficient levels, sensitivity, development contrast, development defect suppression property, and limit resolution when forming patterns. This radiation-sensitive composition contains a polymer and a solvent. The polymer includes: a structural unit (I) that has an iodo group and that also has an acid-dissociable group; a structural unit (II) that has a first organic acid anion and a first onium cation and that includes a first acid-generating structure for generating, through exposure to light, an acid that induces dissociation of the acid-dissociable group; and a structural unit (III) that has a second organic acid anion and a second onium cation, and that includes a second acid-generating structure for generating, through exposure to light, an acid that does not induce dissociation of the acid-dissociable group.

IPC Classes  ?

  • G03F 7/039 - Macromolecular compounds which are photodegradable, e.g. positive electron resists
  • C08F 220/22 - Esters containing halogen
  • C08F 220/28 - Esters containing oxygen in addition to the carboxy oxygen containing no aromatic rings in the alcohol moiety
  • G03F 7/004 - Photosensitive materials
  • G03F 7/20 - ExposureApparatus therefor

34.

AEX

      
Application Number 1841925
Status Registered
Filing Date 2025-01-28
Registration Date 2025-01-28
Owner JSR Corporation (Japan)
NICE Classes  ? 01 - Chemical and biological materials for industrial, scientific and agricultural use

Goods & Services

Chemicals for use in industry; industrial chemicals for use in the manufacture of semiconductors; photoresists; chemical compositions for developing photographs; chemical preparations for use in photography; photographic sensitizers; photographic developers.

35.

SEMICONDUCTOR SUBSTRATE PRODUCTION METHOD AND FILM-FORMING COMPOSITION

      
Application Number JP2024027062
Publication Number 2025/041533
Status In Force
Filing Date 2024-07-30
Publication Date 2025-02-27
Owner JSR CORPORATION (Japan)
Inventor
  • Kimata,hironori
  • Serizawa,ryuichi
  • Ozaki,yuki

Abstract

Provided are: a semiconductor substrate production method that uses a metal-containing resist underlayer film capable of imparting favorable rectangularity to a metal resist pattern; and an underlayer film-forming composition for a first metal-containing resist. This semiconductor substrate production method includes a step for coating a substrate with a film-forming composition. The film-forming composition contains a solvent and a metal compound comprising at least a metal atom and an organic acid. The organic acid is a compound represented by formula (1). (In formula (1), R1is a hydroxy group, a nitro group, a halogen atom or a C1-20 monovalent organic group (excluding the structure corresponding to -L1-COOH and the structure corresponding to X in the formula). Ar1is a C3-30 r+s+t-valent aromatic ring structure. X is a crosslinkable group. L1represents a single bond or a divalent linking group. t is an integer of 0-2. When t is 2, the two R1are the same or different. r is an integer of 1-4. When r is 2 or more, the plurality of X are the same or different. s is an integer of 1-4. When s is 2 or more, the plurality of L1 are the same or different.)

IPC Classes  ?

  • H01L 21/314 - Inorganic layers
  • C09D 7/63 - Additives non-macromolecular organic
  • C09D 149/00 - Coating compositions based on homopolymers or copolymers of compounds having one or more carbon-to-carbon triple bondsCoating compositions based on derivatives of such polymers
  • C09D 201/00 - Coating compositions based on unspecified macromolecular compounds
  • G03F 7/11 - Photosensitive materials characterised by structural details, e.g. supports, auxiliary layers having cover layers or intermediate layers, e.g. subbing layers
  • H01L 21/3065 - Plasma etchingReactive-ion etching

36.

JSR NSC

      
Serial Number 79421714
Status Pending
Filing Date 2025-02-27
Owner JSR CORPORATION (Japan)
NICE Classes  ? 01 - Chemical and biological materials for industrial, scientific and agricultural use

Goods & Services

Chemical source material for the deposition of thin films upon semiconductor wafers for the manufacture of semiconductors; industrial chemicals for use in the manufacture of semiconductors; industrial chemicals; adhesives for industrial purposes; chemical preparations for use in photography; photoresists; unprocessed artificial resins as raw materials in the form of powders, liquids or pastes; unprocessed plastics in primary form.

37.

PHOTOSENSITIVE RESIN COMPOSITION FOR PRODUCING PLATED MOLDED ARTICLE, METHOD FOR PRODUCING RESIST PATTERN FILM, AND METHOD FOR PRODUCING PLATED MOLDED ARTICLE

      
Application Number JP2024028954
Publication Number 2025/041685
Status In Force
Filing Date 2024-08-14
Publication Date 2025-02-27
Owner JSR CORPORATION (Japan)
Inventor
  • Horikawa Shuhei
  • Matsumoto Tomoyuki
  • Nishiguchi Naoki
  • Okamoto Erika

Abstract

An embodiment of the present invention relates to a photosensitive resin composition for producing a plated molded article, a method for producing a resist pattern film, and a method for producing a plated molded article. Said composition contains: a (meth)acrylic polymer (A1) having an acid dissociable group; a photoacid generator (B); at least one compound (C) selected from the group consisting of an organic carboxylic acid compound (C1) having a pKa of 4.5 or less, an organic carboxylic acid anhydride (C2) having a pKa of 4.5 or less, and a polyhydric phenol compound (C3) having a CLogP of 4.5 or less; and a solvent (G).

IPC Classes  ?

  • G03F 7/004 - Photosensitive materials
  • G03F 7/20 - ExposureApparatus therefor
  • G03F 7/039 - Macromolecular compounds which are photodegradable, e.g. positive electron resists
  • G03F 7/40 - Treatment after imagewise removal, e.g. baking

38.

PHOTOSENSITIVE RESIN COMPOSITION, METHOD FOR PRODUCING RESIST PATTERN FILM, AND METHOD FOR PRODUCING PLATED SHAPED ARTICLE

      
Application Number JP2024028955
Publication Number 2025/041686
Status In Force
Filing Date 2024-08-14
Publication Date 2025-02-27
Owner JSR CORPORATION (Japan)
Inventor
  • Matsumoto Tomoyuki
  • Higuchi Tetsuya
  • Kiriyama Takashi
  • Horikawa Shuhei
  • Nishiguchi Naoki

Abstract

One embodiment of the present invention relates to a photosensitive resin composition, a method for producing a resist pattern film, or a method for producing a plated shaped article. The photosensitive resin composition contains a polymer (A1) that is selected from among an alkali-soluble polymer and a polymer having an acid dissociable group, a polymer (A2) that is selected from among an alkali-soluble polymer and a polymer having an acid dissociable group, a photoacid generator (B), and a solvent (C). The glass transition temperature (Tg) of the polymer (A2) is -45°C to 25°C, and the glass transition temperature (Tg) of the polymer (A1) is higher than the Tg of the polymer (A2) by 55°C to 120°C.

IPC Classes  ?

  • G03F 7/039 - Macromolecular compounds which are photodegradable, e.g. positive electron resists
  • G03F 7/004 - Photosensitive materials
  • G03F 7/20 - ExposureApparatus therefor
  • G03F 7/40 - Treatment after imagewise removal, e.g. baking

39.

RADIATION-SENSITIVE COMPOSITION, RESIST PATTERN FORMATION METHOD, AND POLYMER

      
Application Number JP2024021937
Publication Number 2025/037476
Status In Force
Filing Date 2024-06-17
Publication Date 2025-02-20
Owner JSR CORPORATION (Japan)
Inventor
  • Miyata, Hiromu
  • Kitamura, Koki
  • Osawa, Sosuke

Abstract

This radiation-sensitive composition comprises a polymer which contains, in the same molecule, a first structural unit having an acid-dissociable group, a second structural unit having a radiation-sensitive onium cation and a sulfonic acid anion, and a third structural unit having a radiation-sensitive onium cation and a carboxylic acid anion, and in which the content ratio of the first structural unit is at least 55 mol% with respect to all the structural units.

IPC Classes  ?

40.

RADIATION-SENSITIVE COMPOSITION, RESIST PATTERN FORMATION METHOD, AND POLYMER

      
Application Number JP2024021936
Publication Number 2025/032972
Status In Force
Filing Date 2024-06-17
Publication Date 2025-02-13
Owner JSR CORPORATION (Japan)
Inventor
  • Osawa, Sosuke
  • Hae, Takuma
  • Sakai, Hikaru

Abstract

This radiation-sensitive composition contains a polymer containing: a first structural unit having a radiation-sensitive onium cation and a sulfonic acid anion; a second structural unit having a radiation-sensitive onium cation and a carboxylic acid anion; and a third structural unit represented by formula (1). In formula (1), R1represents a hydrogen atom, a fluorine atom, a methyl group, or a trifluoromethyl group. B1is a single bond or a divalent hydrocarbon group. L1is a divalent organic group. R2 is an acid-decomposable group.

IPC Classes  ?

  • G03F 7/004 - Photosensitive materials
  • G03F 7/20 - ExposureApparatus therefor
  • G03F 7/039 - Macromolecular compounds which are photodegradable, e.g. positive electron resists

41.

METHOD FOR MANUFACTURING SEMICONDUCTOR SUBSTRATE AND COMPOSITION FOR FORMING UNDERLAYER FILM FOR METAL-CONTAINING RESIST

      
Application Number JP2024025960
Publication Number 2025/033138
Status In Force
Filing Date 2024-07-19
Publication Date 2025-02-13
Owner JSR CORPORATION (Japan)
Inventor
  • Kasai,tatsuya
  • Takada,kazuya

Abstract

Provided are a method for manufacturing a semiconductor substrate with which it is possible to form an underlayer film for a metal-containing resist capable of achieving excellent rectangularity in a resist pattern, and a composition for forming an underlayer film for a metal-containing resist. This method for manufacturing a semiconductor substrate comprises: a step for directly or indirectly applying, to a substrate, a composition for forming an underlayer film for a metal-containing resist; a step for forming a metal-containing resist film on an underlayer film for a metal-containing resist, the underlayer film being formed by means of the step for applying the composition for forming an underlayer film for a metal-containing resist; a step for exposing the metal-containing resist film to extreme ultraviolet rays; and a step for developing at least the exposed metal-containing resist film. The composition for forming an underlayer film for a metal-containing resist contains a solvent and a compound having a structural unit (α) represented by formula (1-1). (In formula (1-1), a is an integer of 1-3. R1is a C1-20 monovalent organic group, a hydroxy group, or a halogen atom. b is an integer of 0-2. When b is 2, the two R1 are the same as each other or are different from one another. However, a + b is 3 or less.)

IPC Classes  ?

  • G03F 7/11 - Photosensitive materials characterised by structural details, e.g. supports, auxiliary layers having cover layers or intermediate layers, e.g. subbing layers
  • C08G 77/12 - Polysiloxanes containing silicon bound to hydrogen
  • C08G 77/24 - Polysiloxanes containing silicon bound to organic groups containing atoms other than carbon, hydrogen, and oxygen halogen-containing groups
  • H01L 21/027 - Making masks on semiconductor bodies for further photolithographic processing, not provided for in group or

42.

RADIATION-SENSITIVE COMPOSITION, RESIST PATTERN FORMATION METHOD, AND POLYMER

      
Application Number JP2024021935
Publication Number 2025/032971
Status In Force
Filing Date 2024-06-17
Publication Date 2025-02-13
Owner JSR CORPORATION (Japan)
Inventor
  • Osawa, Sosuke
  • Kobayashi, Atsushi
  • Motoyama, Kazuki

Abstract

This radiation-sensitive composition contains a polymer containing: a first structural unit having a radiation-sensitive onium cation and a sulfonic acid anion; a second structural unit having a radiation-sensitive onium cation and a carboxylic acid anion; and a third structural unit represented by formula (1). In formula (1), Ar1is a group obtained by removing (s+t+1) hydrogen atoms from an aromatic hydrocarbon ring. s is an integer of 1 or higher. t is an integer of 1 or higher. R2is a hydroxy group, an alkyl group, an alkoxy group or -OX1. X1 is an acid-decomposable group.

IPC Classes  ?

  • G03F 7/004 - Photosensitive materials
  • G03F 7/20 - ExposureApparatus therefor
  • G03F 7/039 - Macromolecular compounds which are photodegradable, e.g. positive electron resists

43.

RADIATION-SENSITIVE COMPOSITION, METHOD FOR FORMING PATTERN, AND ONIUM SALT

      
Application Number JP2024024568
Publication Number 2025/033056
Status In Force
Filing Date 2024-07-08
Publication Date 2025-02-13
Owner JSR CORPORATION (Japan)
Inventor
  • Nemoto,ryuichi
  • Abe,yudai
  • Nishii,atsuto
  • Mita,michihiro
  • Inami,hajime
  • Egawa,fuyuki

Abstract

Provided are: a radiation-sensitive composition capable of exhibiting excellent sensitivity, CDU performance, DOF performance, pattern circularity, LWR performance, pattern rectangularity, and development defect suppression when forming a pattern; a pattern formation method; and an onium salt. This radiation-sensitive composition contains an onium salt represented by formula (1) (hereinafter, also referred to as an "onium salt (1)"), a polymer containing a structural unit (I) having an acid-dissociable group, and a solvent. (In formula (1), Ar1is an (a1 + b1 +1)-valent aromatic ring. Ar2is an (a2 + b2 +1)-valent aromatic ring. X1and X2are each independently a monovalent organic group having 1-20 carbon atoms, a cyano group, a nitro group, or a halogen atom. When multiple X1and multiple X2are present, the multiple X1and the multiple X2are each identical to or different from each other. Y1is a monovalent organic group having 4-20 carbon atoms and bonded via Ar122-, or a monovalent perfluoroalkyl group having 1-20 carbon atoms. When multiple Y1are present, the multiple Y1are identical to or different from each other. Y2is a monovalent organic group having 4-20 carbon atoms and bonded via Ar222-, or a monovalent perfluoroalkyl group having 1-20 carbon atoms. When multiple Y2are present, the multiple Y2are identical to or different from each other. L is a single bond or a divalent linking group having 1-5 carbon atoms. a1, a2, b1, and b2 are each independently an integer of 0-5. When the aromatic ring of Ar2 is a benzene ring, b1 + b2 ≥ 1.)

IPC Classes  ?

  • G03F 7/004 - Photosensitive materials
  • C07C 63/04 - Monocyclic monocarboxylic acids
  • C07C 65/21 - Compounds having carboxyl groups bound to carbon atoms of six-membered aromatic rings and containing any of the groups OH, O-metal, —CHO, keto, ether, groups, groups, or groups containing ether groups, groups, groups, or groups
  • C07C 255/56 - Carboxylic acid nitriles having cyano groups bound to carbon atoms of six-membered aromatic rings of a carbon skeleton containing cyano groups and doubly-bound oxygen atoms bound to the carbon skeleton
  • C07C 317/14 - SulfonesSulfoxides having sulfone or sulfoxide groups bound to carbon atoms of six-membered aromatic rings
  • C07D 207/34 - Heterocyclic compounds containing five-membered rings not condensed with other rings, with one nitrogen atom as the only ring hetero atom with only hydrogen or carbon atoms directly attached to the ring nitrogen atom having two double bonds between ring members or between ring members and non-ring members with hetero atoms or with carbon atoms having three bonds to hetero atoms with at the most one bond to halogen, e.g. ester or nitrile radicals, directly attached to ring carbon atoms
  • C07D 209/30 - IndolesHydrogenated indoles with hetero atoms or with carbon atoms having three bonds to hetero atoms with at the most one bond to halogen, directly attached to carbon atoms of the hetero ring
  • C07D 209/88 - CarbazolesHydrogenated carbazoles with hetero atoms or with carbon atoms having three bonds to hetero atoms with at the most one bond to halogen, e.g. ester or nitrile radicals, directly attached to carbon atoms of the ring system
  • C07D 307/56 - Heterocyclic compounds containing five-membered rings having one oxygen atom as the only ring hetero atom not condensed with other rings having two or three double bonds between ring members or between ring members and non-ring members with hetero atoms or with carbon atoms having three bonds to hetero atoms with at the most one bond to halogen, e.g. ester or nitrile radicals, directly attached to ring carbon atoms
  • C07D 307/79 - Benzo [b] furansHydrogenated benzo [b] furans with only hydrogen atoms, hydrocarbon or substituted hydrocarbon radicals, directly attached to carbon atoms of the hetero ring
  • C07D 307/88 - Benzo [c] furansHydrogenated benzo [c] furans with one oxygen atom directly attached in position 1 or 3
  • C07D 317/22 - Radicals substituted by singly bound oxygen or sulfur atoms etherified
  • C07D 317/62 - Methylenedioxybenzenes or hydrogenated methylenedioxybenzenes, unsubstituted on the hetero ring with hetero atoms or with carbon atoms having three bonds to hetero atoms with at the most one bond to halogen, e.g. ester or nitrile radicals, directly attached to atoms of the carbocyclic ring
  • C07D 317/72 - Heterocyclic compounds containing five-membered rings having two oxygen atoms as the only ring hetero atoms having the hetero atoms in positions 1 and 3 spiro-condensed with carbocyclic rings
  • C07D 333/28 - Halogen atoms
  • C07D 333/62 - Benzo [b] thiophenesHydrogenated benzo [b] thiophenes with hetero atoms or with carbon atoms having three bonds to hetero atoms with at the most one bond to halogen, e.g. ester or nitrile radicals, directly attached to carbon atoms of the hetero ring
  • G03F 7/20 - ExposureApparatus therefor
  • G03F 7/038 - Macromolecular compounds which are rendered insoluble or differentially wettable
  • G03F 7/039 - Macromolecular compounds which are photodegradable, e.g. positive electron resists

44.

PHOTOSENSITIVE COMPOSITION, PATTERN FILM AND METHOD FOR PRODUCING SAME, DISPLAY DEVICE, OPTICAL MATERIAL, AND SOLID-STATE IMAGING ELEMENT

      
Application Number JP2024027984
Publication Number 2025/033396
Status In Force
Filing Date 2024-08-06
Publication Date 2025-02-13
Owner JSR CORPORATION (Japan)
Inventor
  • Matsumura, Nobuji
  • Akiike, Toshiyuki

Abstract

Disclosed is a photosensitive composition which contains the components (A) and (B) described below. (A): One or more Si-containing compounds selected from among (A1) and (A2) described below (A1): An Si-containing compound that has a structural unit a1 having an alkali-soluble group and a polymerizable group, and a structural unit a2 having a polymerizable group or a structural unit a3 having an alkali-soluble group (A2): An Si-containing compound that has a structural unit a2 having a polymerizable group and a structural unit a3 having an alkali-soluble group (B): Photopolymerization initiator

IPC Classes  ?

  • G03F 7/075 - Silicon-containing compounds
  • C08F 299/08 - Macromolecular compounds obtained by interreacting polymers involving only carbon-to-carbon unsaturated bond reactions, in the absence of non-macromolecular monomers from unsaturated polycondensates from polysiloxanes
  • C08G 77/20 - Polysiloxanes containing silicon bound to unsaturated aliphatic groups
  • C08G 77/38 - Polysiloxanes modified by chemical after-treatment
  • G02B 1/111 - Anti-reflection coatings using layers comprising organic materials
  • G03F 7/20 - ExposureApparatus therefor
  • G03F 7/027 - Non-macromolecular photopolymerisable compounds having carbon-to-carbon double bonds, e.g. ethylenic compounds
  • H01L 27/146 - Imager structures

45.

METHOD FOR PRODUCING POLYAMIDE-BASED RESIN EXPANDED BEADS AND METHOD FOR PRODUCING POLYAMIDE-BASED RESIN EXPANDED MOLDED ARTICLE

      
Application Number 18782655
Status Pending
Filing Date 2024-07-24
First Publication Date 2025-02-06
Owner JSP CORPORATION (Japan)
Inventor Hayashi, Tatsuya

Abstract

A polyamide-based resin melt obtained by melt-kneading a base resin, an organic compound-based additive (A), and an iodide-based additive (X) is granulated to prepare polyamide-based resin particles. The polyamide-based resin particles are expanded by using a physical blowing agent to produce polyamide-based resin expanded beads. The polyamide-based resin expanded beads are in-mold molded to produce a polyamide-based resin expanded molded article. The organic compound-based additive (A) is made of a hindered phenol-based compound and/or an organophosphorus-based compound. The iodide-based additive (X) is made of copper iodide, or copper iodide and potassium iodide.

IPC Classes  ?

  • C08J 9/18 - Making expandable particles by impregnating polymer particles with the blowing agent
  • C08J 3/12 - Powdering or granulating
  • C08J 3/20 - Compounding polymers with additives, e.g. colouring
  • C08J 9/00 - Working-up of macromolecular substances to porous or cellular articles or materialsAfter-treatment thereof
  • C08J 9/12 - Working-up of macromolecular substances to porous or cellular articles or materialsAfter-treatment thereof using blowing gases generated by a previously added blowing agent by a physical blowing agent

46.

POLYAMIDE RESIN FOAMED PARTICLES AND METHOD FOR PRODUCING SAME

      
Application Number 18886123
Status Pending
Filing Date 2024-09-16
First Publication Date 2025-02-06
Owner JSP Corporation (Japan)
Inventor
  • Hayashi, Tatsuya
  • Hira, Akinobu

Abstract

A polyamide-based resin expanded bead comprising a foam layer formed by expanding a polyamide-based resin, wherein on a first DSC curve and a second DSC curve, the first DSC curve has a melting peak (intrinsic peak) having a peak top temperature on a low temperature side equal to or lower than a peak top temperature of a melting peak of the second DSC curve and a melting peak (high temperature peak) having a peak top temperature on a high temperature side exceeding the peak top temperature of the second DSC curve, and, the peak top temperature of the melting peak of the second DSC curve is 180° C. or higher and 280° C. or lower, and the polyamide-based resin expanded bead has an apparent density of 10 to 300 kg/m3 and a closed cell ratio of 85% or more.

IPC Classes  ?

  • C08J 9/18 - Making expandable particles by impregnating polymer particles with the blowing agent

47.

METHOD FOR PRODUCING SEMICONDUCTOR SUBSTRATE AND SILICON-CONTAINING COMPOSITION

      
Application Number 18919818
Status Pending
Filing Date 2024-10-18
First Publication Date 2025-02-06
Owner JSR CORPORATION (Japan)
Inventor
  • Sakai, Kazunori
  • Kasai, Tatsuya
  • Suzuki, Ayaka
  • Nii, Akitaka

Abstract

A method for producing a semiconductor substrate includes: applying a silicon-containing composition directly or indirectly to a substrate to form a silicon-containing film; applying a composition for forming a resist film to the silicon-containing film to form a resist film; exposing the resist film to radiation; and developing at least the exposed resist film. The silicon-containing composition includes: a silicon-containing compound; a polymer including a structural unit represented by formula (1); and a solvent. A content of the silicon-containing compound in the silicon-containing composition relative to 100% by mass of components other than the solvent in the silicon-containing composition is from 50% to 99.9% by mass. RA1 is a hydrogen atom or a monovalent organic group having 1 to 20 carbon atoms; and RA2 is a monovalent organic group having 1 to 20 carbon atoms. A method for producing a semiconductor substrate includes: applying a silicon-containing composition directly or indirectly to a substrate to form a silicon-containing film; applying a composition for forming a resist film to the silicon-containing film to form a resist film; exposing the resist film to radiation; and developing at least the exposed resist film. The silicon-containing composition includes: a silicon-containing compound; a polymer including a structural unit represented by formula (1); and a solvent. A content of the silicon-containing compound in the silicon-containing composition relative to 100% by mass of components other than the solvent in the silicon-containing composition is from 50% to 99.9% by mass. RA1 is a hydrogen atom or a monovalent organic group having 1 to 20 carbon atoms; and RA2 is a monovalent organic group having 1 to 20 carbon atoms.

IPC Classes  ?

  • G03F 7/00 - Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printed surfacesMaterials therefor, e.g. comprising photoresistsApparatus specially adapted therefor
  • C08K 5/5419 - Silicon-containing compounds containing oxygen containing at least one Si—O bond containing at least one Si—C bond
  • C09D 133/06 - Homopolymers or copolymers of esters of esters containing only carbon, hydrogen and oxygen, the oxygen atom being present only as part of the carboxyl radical
  • G03F 7/039 - Macromolecular compounds which are photodegradable, e.g. positive electron resists
  • G03F 7/075 - Silicon-containing compounds
  • G03F 7/16 - Coating processesApparatus therefor
  • H01L 21/027 - Making masks on semiconductor bodies for further photolithographic processing, not provided for in group or

48.

METHOD FOR PRODUCING SEMICONDUCTOR SUBSTRATE, AND RESIST UNDERLAYER FILM-FORMING COMPOSITION

      
Application Number JP2024026067
Publication Number 2025/028314
Status In Force
Filing Date 2024-07-22
Publication Date 2025-02-06
Owner JSR CORPORATION (Japan)
Inventor
  • Dobashi,masato
  • Akita,shunpei
  • Dei,satoshi
  • Hayashi,yuya
  • Miyauchi,hiroyuki
  • Takanashi,kazunori
  • Takada,kazuya
  • Kasai,tatsuya

Abstract

Provided are: a resist underlayer film-forming composition that is capable of forming a resist underlayer film that can impart excellent pattern rectangularity to a resist pattern; and a method for producing a semiconductor substrate. The method for producing a semiconductor substrate comprises: a step for directly or indirectly coating a substrate with a resist underlayer film-forming composition; a step for forming a resist film on the resist underlayer film formed by the aforementioned step for coating a resist underlayer film-forming composition; a step for exposing the resist film to radiation; and a step for developing at least the exposed resist film. The resist underlayer film-forming composition contains a polymer and a solvent. The polymer contains a repeating unit (1) having an organosulfonate anion moiety and an onium cation moiety, a repeating unit (2) represented by formula (2), and a repeating unit (3) represented by formula (3). (In formula (2), R4is a group selected from the group consisting of groups represented by any of formulas (2-1) to (2-8).) (In formula (3), R6is a group that contains a substructure represented by formula (3-1) or (3-2).) (In formulas (3-1) and (3-2), X1and X2 are each independently an oxygen atom, a sulfur atom, or a nitrogen atom. A formula in which a solid line and a broken line are combined indicates a single bond or a double bond each independently.)

IPC Classes  ?

  • G03F 7/11 - Photosensitive materials characterised by structural details, e.g. supports, auxiliary layers having cover layers or intermediate layers, e.g. subbing layers
  • C08F 220/38 - Esters containing sulfur
  • C08F 228/02 - Copolymers of compounds having one or more unsaturated aliphatic radicals, each having only one carbon-to-carbon double bond, and at least one being terminated by a bond to sulfur or by a heterocyclic ring containing sulfur by a bond to sulfur
  • G03F 7/095 - Photosensitive materials characterised by structural details, e.g. supports, auxiliary layers having more than one photosensitive layer
  • H01L 21/027 - Making masks on semiconductor bodies for further photolithographic processing, not provided for in group or

49.

POLYPROPYLENE RESIN FOAM PARTICLES

      
Application Number JP2024026133
Publication Number 2025/028323
Status In Force
Filing Date 2024-07-22
Publication Date 2025-02-06
Owner JSP CORPORATION (Japan)
Inventor Koshita Nobumasa

Abstract

These polypropylene resin foam particles each have a foam core layer composed of a polypropylene resin, and a coating layer covering the foam core layer. The coating layer is composed of linear low-density polyethylene. The mass ratio of the coating layer to the foam core layer is 0.005-0.05. The polypropylene resin constituting the foam core layer satisfies a prescribed condition (i) or (ii). Said foam particles can remarkably reduce the steam pressure at the time of in-mold molding, can shorten the curing time, and furthermore makes it possible to obtain a foam particle molded article that has a desired shape and is excellent in appearance even when the curing time is shortened.

IPC Classes  ?

  • C08J 9/18 - Making expandable particles by impregnating polymer particles with the blowing agent

50.

ANTIFERROMAGNETIC BODY MATERIAL, TWO-LAYER FILM OF MAGNETIC BODY AND INSULATOR, TUNNEL MAGNETORESISTIVE ELEMENT, AND MAGNETIC MEMORY

      
Application Number JP2024026734
Publication Number 2025/028421
Status In Force
Filing Date 2024-07-26
Publication Date 2025-02-06
Owner
  • JSR CORPORATION (Japan)
  • THE UNIVERSITY OF TOKYO (Japan)
  • TOHOKU UNIVERSITY (Japan)
Inventor
  • Toga,yuuta
  • Koretsune,takashi
  • Tanaka,katsuhiro
  • Nakatsuji,satoru

Abstract

31-xx1-pp3qr1-q-r1-q-r (0

IPC Classes  ?

  • H10N 50/10 - Magnetoresistive devices
  • H10B 61/00 - Magnetic memory devices, e.g. magnetoresistive RAM [MRAM] devices
  • H10N 50/20 - Spin-polarised current-controlled devices
  • H10N 52/00 - Hall-effect devices

51.

ARX

      
Serial Number 79418627
Status Pending
Filing Date 2025-01-31
Owner JSR Corporation (Japan)
NICE Classes  ? 01 - Chemical and biological materials for industrial, scientific and agricultural use

Goods & Services

Chemicals for use in industry; industrial chemicals for use in the manufacture of semiconductors; photoresists; chemical compositions for developing photographs; chemical preparations for use in photography; photographic sensitizers; photographic developers.

52.

ENZYME SENSOR AND ENZYME SENSOR SYSTEM

      
Application Number 18917137
Status Pending
Filing Date 2024-10-16
First Publication Date 2025-01-30
Owner JSR Corporation (Japan)
Inventor
  • Fujioka, Masayasu
  • Ito, Akinori
  • Hamada, Kenichi

Abstract

An enzyme sensor may be configured to measure a measurement target substance included in a secretion of a living body. The enzyme sensor may include a layered structure including, in this order, (a) an absorber layer configured to absorb the secretion, (b) an enzyme layer containing an enzyme, (c) a mediator layer, and (d) an electrode part. The absorber layer may include a polymeric material having a chemically bound crosslinked structure.

IPC Classes  ?

  • A61B 5/1486 - Measuring characteristics of blood in vivo, e.g. gas concentration or pH-value using chemical or electrochemical methods, e.g. by polarographic means using enzyme electrodes, e.g. with immobilised oxidase
  • A61B 5/145 - Measuring characteristics of blood in vivo, e.g. gas concentration or pH-value
  • C12Q 1/00 - Measuring or testing processes involving enzymes, nucleic acids or microorganismsCompositions thereforProcesses of preparing such compositions
  • G01N 27/327 - Biochemical electrodes
  • G01N 27/416 - Systems
  • G06F 9/06 - Arrangements for program control, e.g. control units using stored programs, i.e. using an internal store of processing equipment to receive or retain programs
  • G06F 15/00 - Digital computers in generalData processing equipment in general

53.

AEX

      
Serial Number 79418146
Status Pending
Filing Date 2025-01-28
Owner JSR Corporation (Japan)
NICE Classes  ? 01 - Chemical and biological materials for industrial, scientific and agricultural use

Goods & Services

Chemicals for use in industry; industrial chemicals for use in the manufacture of semiconductors; photoresists; chemical compositions for developing photographs; chemical preparations for use in photography; photographic sensitizers; photographic developers.

54.

METHOD FOR MANUFACTURING MAGNETIC TUNNEL JUNCTION ELEMENT

      
Application Number JP2024025310
Publication Number 2025/018303
Status In Force
Filing Date 2024-07-12
Publication Date 2025-01-23
Owner
  • JSR CORPORATION (Japan)
  • THE UNIVERSITY OF TOKYO (Japan)
Inventor
  • Inukai Kouji
  • Toga Yuuta
  • Nakatsuji Satoru
  • Idzuchi Hiroshi

Abstract

Provided is a method for manufacturing a magnetic tunnel junction element provided with a magnetic tunnel junction layer and a metal layer in the stated order directly or indirectly on a substrate, the method comprising: a step for applying, to the metal layer, a resist composition containing a polymer that has a structural unit containing an aromatic ring; a step for exposing a resist film formed through the application step; a step for developing the exposed resist film; and a step for etching the magnetic tunnel junction layer and the metal layer using, as a mask, a resist pattern formed through the development step.

IPC Classes  ?

  • H10N 50/01 - Manufacture or treatment
  • G03F 7/004 - Photosensitive materials
  • G03F 7/039 - Macromolecular compounds which are photodegradable, e.g. positive electron resists
  • G03F 7/40 - Treatment after imagewise removal, e.g. baking
  • H05K 1/03 - Use of materials for the substrate
  • H10B 61/00 - Magnetic memory devices, e.g. magnetoresistive RAM [MRAM] devices
  • H10N 50/20 - Spin-polarised current-controlled devices

55.

METHOD FOR MANUFACTURING MAGNETIC TUNNEL JUNCTION ELEMENT

      
Application Number JP2024025315
Publication Number 2025/018305
Status In Force
Filing Date 2024-07-12
Publication Date 2025-01-23
Owner
  • JSR CORPORATION (Japan)
  • THE UNIVERSITY OF TOKYO (Japan)
Inventor
  • Inukai Kouji
  • Toga Yuuta
  • Nakatsuji Satoru
  • Idzuchi Hiroshi

Abstract

A method for manufacturing a magnetic tunnel junction element comprising a magnetic tunnel junction layer and a metal layer directly or indirectly on a substrate in this order, the method comprising: a step for forming a resist underlayer film on the metal layer; a step for forming a silicon oxide film on the resist underlayer film; and a step for forming a resist film on the silicon oxide film, wherein the resist underlayer film is formed from a resist underlayer film-forming composition containing a compound having an aromatic ring and a solvent.

IPC Classes  ?

  • G03F 7/11 - Photosensitive materials characterised by structural details, e.g. supports, auxiliary layers having cover layers or intermediate layers, e.g. subbing layers
  • G03F 7/40 - Treatment after imagewise removal, e.g. baking
  • H10B 61/00 - Magnetic memory devices, e.g. magnetoresistive RAM [MRAM] devices
  • H10N 50/01 - Manufacture or treatment
  • H10N 50/10 - Magnetoresistive devices
  • H10N 50/20 - Spin-polarised current-controlled devices

56.

METHOD FOR MANUFACTURING SEMICONDUCTOR SUBSTRATE, AND UNDERLAYER FILM-FORMING COMPOSITION FOR FIRST METAL-CONTAINING RESIST

      
Application Number JP2024024583
Publication Number 2025/013817
Status In Force
Filing Date 2024-07-08
Publication Date 2025-01-16
Owner JSR CORPORATION (Japan)
Inventor
  • Serizawa,ryuichi
  • Yamada,shuhei
  • Ozaki,yuki
  • Kimata,hironori

Abstract

Provided are: a method for manufacturing a semiconductor substrate that uses an underlayer film for a metal-containing resist, the underlayer film capable of imparting good rectangularity to a metal resist pattern; and an underlayer film-forming composition for a first metal-containing resist. This method for manufacturing a semiconductor substrate includes: a step for directly or indirectly coating a substrate with an underlayer film-forming composition for a first metal-containing resist; a step for forming a metal-containing resist film, which is made of a second metal-containing resist forming material, on an underlayer film for a metal-containing resist, the underlayer film having been formed by the underlayer film-forming composition coating step for the first metal-containing resist; a step for exposing the metal-containing resist film to extreme ultraviolet rays; and a step for developing the exposed metal-containing resist film. The underlayer film-forming composition for the first metal-containing resist contains a solvent and a metal compound composed of at least a metal atom and an organic acid.

IPC Classes  ?

  • G03F 7/11 - Photosensitive materials characterised by structural details, e.g. supports, auxiliary layers having cover layers or intermediate layers, e.g. subbing layers
  • G03F 7/004 - Photosensitive materials
  • H01L 21/027 - Making masks on semiconductor bodies for further photolithographic processing, not provided for in group or

57.

POLYAMIDE RESIN FOAMED PARTICLES AND METHOD FOR PRODUCING SAME

      
Application Number 18886548
Status Pending
Filing Date 2024-09-16
First Publication Date 2025-01-09
Owner JSP Corporation (Japan)
Inventor
  • Hayashi, Tatsuya
  • Hira, Akinobu

Abstract

A polyamide-based resin expanded bead comprising a foam layer formed by expanding a polyamide-based resin, wherein on a first DSC curve and a second DSC curve, the first DSC curve has a melting peak (intrinsic peak) having a peak top temperature on a low temperature side equal to or lower than a peak top temperature of a melting peak of the second DSC curve and a melting peak (high temperature peak) having a peak top temperature on a high temperature side exceeding the peak top temperature of the second DSC curve, and, the peak top temperature of the melting peak of the second DSC curve is 180° C. or higher and 280° C. or lower, and the polyamide-based resin expanded bead has an apparent density of 10 to 300 kg/m3 and a closed cell ratio of 85% or more.

IPC Classes  ?

  • C08J 9/18 - Making expandable particles by impregnating polymer particles with the blowing agent

58.

METHOD FOR PRODUCING ORGANIC COMPOUND AND MECHANOCHEMICAL REACTOR

      
Application Number JP2024021956
Publication Number 2025/009373
Status In Force
Filing Date 2024-06-18
Publication Date 2025-01-09
Owner JSR CORPORATION (Japan)
Inventor
  • Ishimura,toshiki
  • Nawate,yuuya
  • Kato,takumi
  • Sugawara,tetsunori

Abstract

Provided are: a method for producing an organic compound, the method simply and economically rationally enabling a reaction by a mechanochemical method; and a mechanochemical reactor. Provided is a method for producing an organic compound, the method comprising a step for carrying out a reaction in a reactor, wherein the reactor comprises a non-metal reaction container and a plurality of stirring media having been charged into the reaction container, at least the surfaces of the stirring media being non-metal, and the reaction is carried out by a mechanochemical method by means of relative movement between the reaction container and the stirring media. In this method, the acceleration of the movement of the stirring media caused by the movement of the reaction container is 9.83 m/s2 or less.

IPC Classes  ?

  • C07C 1/32 - Preparation of hydrocarbons from one or more compounds, none of them being a hydrocarbon starting from compounds containing hetero atoms other than, or in addition to, oxygen or halogen
  • C07B 61/00 - Other general methods
  • C07C 5/44 - Preparation of hydrocarbons from hydrocarbons containing the same number of carbon atoms by dehydrogenation with a hydrogen acceptor with a halogen or a halogen-containing compound as an acceptor
  • C07C 13/62 - Polycyclic hydrocarbons or acyclic hydrocarbon derivatives thereof with condensed rings with more than three condensed rings
  • C07C 15/24 - Polycyclic condensed hydrocarbons containing two rings
  • C07C 29/40 - Preparation of compounds having hydroxy or O-metal groups bound to a carbon atom not belonging to a six-membered aromatic ring increasing the number of carbon atoms by reactions with formation of hydroxy groups, which may occur via intermediates being derivatives of hydroxy groups, e.g. O-metal by reaction with aldehydes or ketones with compounds containing carbon-to-metal bonds
  • C07C 29/143 - Preparation of compounds having hydroxy or O-metal groups bound to a carbon atom not belonging to a six-membered aromatic ring by reduction of an oxygen-containing functional group of C=O containing groups, e.g. —COOH of ketones
  • C07C 33/24 - Monohydroxylic alcohols containing only six-membered aromatic rings as cyclic part polycyclic without condensed ring systems
  • C07C 33/26 - Polyhydroxylic alcohols containing only six-membered aromatic rings as cyclic part
  • C07C 45/46 - Friedel-Crafts reactions
  • C07C 49/784 - Ketones containing a keto group bound to a six-membered aromatic ring polycyclic with all keto groups bound to a non-condensed ring
  • C07C 231/02 - Preparation of carboxylic acid amides from carboxylic acids or from esters, anhydrides, or halides thereof by reaction with ammonia or amines
  • C07C 233/15 - Carboxylic acid amides having carbon atoms of carboxamide groups bound to hydrogen atoms or to acyclic carbon atoms having the nitrogen atom of at least one of the carboxamide groups bound to a carbon atom of a hydrocarbon radical substituted by halogen atoms or by nitro or nitroso groups with the substituted hydrocarbon radical bound to the nitrogen atom of the carboxamide group by a carbon atom of a six-membered aromatic ring

59.

RADIATION-SENSITIVE COMPOSITION, RESIST PATTERN FORMATION METHOD, POLYMER AND METHOD FOR PRODUCING SAME, AND COMPOUND

      
Application Number JP2024022828
Publication Number 2025/009429
Status In Force
Filing Date 2024-06-24
Publication Date 2025-01-09
Owner JSR CORPORATION (Japan)
Inventor
  • Shiratani, Motohiro
  • Motoyama, Kazuki
  • Rozhanskii, Igor
  • Nishikori, Katsuaki
  • Miyata, Hiromu
  • Abe, Shin-Ya

Abstract

This radiation-sensitive composition contains a polymer represented by formula (1). In formula (1), A1and A2each independently represent a group represented by formula (a-1), formula (a-2), formula (a-3), or formula (a-4). B1represents a divalent group having a partial structure by which the bond between A1and A2mediated by B1can be cut by the action of an acid. P1and P2 are each independently a molecule chain.

IPC Classes  ?

  • G03F 7/039 - Macromolecular compounds which are photodegradable, e.g. positive electron resists
  • C08F 2/44 - Polymerisation in the presence of compounding ingredients, e.g. plasticisers, dyestuffs, fillers
  • C08F 20/00 - Homopolymers or copolymers of compounds having one or more unsaturated aliphatic radicals, each having only one carbon-to-carbon double bond, and only one being terminated by only one carboxyl radical or a salt, anhydride, ester, amide, imide, or nitrile thereof
  • C08F 212/06 - Hydrocarbons
  • C08F 220/18 - Esters of monohydric alcohols or phenols of phenols or of alcohols containing two or more carbon atoms with acrylic or methacrylic acids
  • G03F 7/20 - ExposureApparatus therefor

60.

RADIATION-SENSITIVE COMPOSITION, PATTERN FORMATION METHOD, AND PHOTO-DEGRADABLE BASE

      
Application Number 18882982
Status Pending
Filing Date 2024-09-12
First Publication Date 2025-01-09
Owner JSR CORPORATION (Japan)
Inventor
  • Nemoto, Ryuichi
  • Furuichi, Kota
  • Nakamura, Ryosuke
  • Furukawa, Tsuyoshi

Abstract

A radiation-sensitive composition contains a polymer having an acid-releasable group, and a compound (Q) represented by formula (1). In the formula (1), L1 represents an ester group, —CO—NR3—, a (thio)ether group, or a sulfonyl group. R4 represents a hydrogen atom, a substituted or unsubstituted C1 to C20 monovalent hydrocarbon group, a halogen atom, a hydroxy group, or a nitro group. R5 represents a C1 to C20 monovalent hydrocarbon group, a C1 to C20 monovalent halogenated hydrocarbon group, or a halogen atom, and optionally two R5s taken together represent an alicyclic structure together with the carbon atom(s) between the two R5s. L2 represents a single bond or a divalent linking group. A radiation-sensitive composition contains a polymer having an acid-releasable group, and a compound (Q) represented by formula (1). In the formula (1), L1 represents an ester group, —CO—NR3—, a (thio)ether group, or a sulfonyl group. R4 represents a hydrogen atom, a substituted or unsubstituted C1 to C20 monovalent hydrocarbon group, a halogen atom, a hydroxy group, or a nitro group. R5 represents a C1 to C20 monovalent hydrocarbon group, a C1 to C20 monovalent halogenated hydrocarbon group, or a halogen atom, and optionally two R5s taken together represent an alicyclic structure together with the carbon atom(s) between the two R5s. L2 represents a single bond or a divalent linking group.

IPC Classes  ?

  • G03F 7/004 - Photosensitive materials
  • C07C 69/75 - Esters of carboxylic acids having an esterified carboxyl group bound to a carbon atom of a ring other than a six-membered aromatic ring of acids with a six-membered ring
  • C07C 309/12 - Sulfonic acids having sulfo groups bound to acyclic carbon atoms of an acyclic saturated carbon skeleton containing oxygen atoms bound to the carbon skeleton containing esterified hydroxy groups bound to the carbon skeleton
  • C07C 309/17 - Sulfonic acids having sulfo groups bound to acyclic carbon atoms of an acyclic saturated carbon skeleton containing carboxyl groups bound to the carbon skeleton
  • C07C 309/27 - Sulfonic acids having sulfo groups bound to carbon atoms of rings other than six-membered aromatic rings of a carbon skeleton containing carboxyl groups bound to the carbon skeleton
  • C07D 207/416 - 2,5-Pyrrolidine-diones with hetero atoms or with carbon atoms having three bonds to hetero atoms with at the most one bond to halogen, e.g. ester or nitrile radicals, directly attached to other ring carbon atoms
  • C07D 307/00 - Heterocyclic compounds containing five-membered rings having one oxygen atom as the only ring hetero atom
  • C07D 307/94 - Heterocyclic compounds containing five-membered rings having one oxygen atom as the only ring hetero atom spiro-condensed with carbocyclic rings or ring systems, e.g. griseofulvins
  • C07D 311/00 - Heterocyclic compounds containing six-membered rings having one oxygen atom as the only hetero atom, condensed with other rings
  • C07D 313/06 - Seven-membered rings condensed with carbocyclic rings or ring systems
  • C07D 321/06 - 1, 3-DioxepinesHydrogenated 1,3-dioxepines
  • C07D 327/04 - Five-membered rings
  • C07D 327/06 - Six-membered rings
  • G03F 7/039 - Macromolecular compounds which are photodegradable, e.g. positive electron resists
  • G03F 7/32 - Liquid compositions therefor, e.g. developers

61.

SEMICONDUCTOR SUBSTRATE MANUFACTURING METHOD AND REVERSAL PATTERN FORMING MATERIAL

      
Application Number JP2024021987
Publication Number 2025/009380
Status In Force
Filing Date 2024-06-18
Publication Date 2025-01-09
Owner JSR CORPORATION (Japan)
Inventor
  • Serizawa,ryuichi
  • Kasai,tatsuya
  • Ozaki,yuki

Abstract

Provided are: a semiconductor substrate manufacturing method with which it is possible to improve the etching resistance of a reversal pattern of a metal-containing resist pattern and the rectangularity of the reversal pattern; and a reversal pattern forming material. This semiconductor substrate manufacturing method comprises: a step for forming a metal-containing resist film directly or indirectly on a substrate with use of a metal-containing resist forming material; a step for subjecting the metal-containing resist film to light exposure by means of extreme ultraviolet light; a step for developing the light-exposed metal-containing resist film; a step for forming, on the metal-containing resist pattern that is formed in the development step, a film for reversal pattern formation with use of a reversal pattern forming material; and a step for removing the metal-containing resist pattern so as to form a reversal pattern that is formed of the film for reversal pattern formation. The metal-containing resist forming material contains tin atoms, and the reversal pattern forming material contains silicon atoms.

IPC Classes  ?

62.

METHOD FOR MANUFACTURING MAGNETIC STORAGE ELEMENT

      
Application Number JP2024023703
Publication Number 2025/009492
Status In Force
Filing Date 2024-07-01
Publication Date 2025-01-09
Owner
  • JSR CORPORATION (Japan)
  • THE UNIVERSITY OF TOKYO (Japan)
Inventor
  • Inukai, Kouji
  • Toga, Yuuta
  • Ichinohe, Daigo
  • Shimizu, Makoto
  • Nakatsuji, Satoru
  • Idzuchi, Hiroshi

Abstract

The purpose of the present invention is to manufacture a fine-patterned magnetic storage element with high precision. A magnetic storage element (1) includes: a magnetic tunnel junction layer (30) having a structure in which an insulating layer (32) is sandwiched between two magnetic layers (31) and (33), and in which the resistance state changes in accordance with the magnetization direction of one of the magnetic layer (31) and the magnetic layer (33); and a metal layer (40) provided on the magnetic tunnel junction layer (30). A method for manufacturing the magnetic storage element (1) includes a step for forming a resist film (50) having an opening (50a) on a substrate (10) on which an electrode layer (20) is formed, a step for forming a magnetic tunnel junction layer (30) on the electrode layer (20) exposed in the opening (50a), a step for forming a metal layer (40) on the magnetic tunnel junction layer (30), and a step for removing the resist film (50).

IPC Classes  ?

  • H10B 61/00 - Magnetic memory devices, e.g. magnetoresistive RAM [MRAM] devices
  • H01L 21/3205 - Deposition of non-insulating-, e.g. conductive- or resistive-, layers, on insulating layersAfter-treatment of these layers
  • H01L 21/768 - Applying interconnections to be used for carrying current between separate components within a device
  • H10N 50/10 - Magnetoresistive devices

63.

Radiation-Sensitive Composition, Pattern Formation Method, and Photo-Degradable Base

      
Application Number 18829747
Status Pending
Filing Date 2024-09-10
First Publication Date 2025-01-02
Owner JSR CORPORATION (Japan)
Inventor
  • Nemoto, Ryuichi
  • Miyake, Masayuki
  • Mita, Michihiro
  • Abe, Yudai
  • Kiriyama, Kazuya

Abstract

A radiation-sensitive composition contains a polymer having an acid-releasable group, and a compound represented by formula (1). In the formula (1), A1 represents a (m+n+2)-valent aromatic ring group. Both —OH and —COO− are bound to a common benzene ring in A1. Atom to which —OH is bound is located next to an atom to which —COO31 is bound. R1 represents a monovalent group comprising a cyclic (thio)acetal structure. m is an integer of ≥0. n is an integer of ≥0. M+ represents a monovalent organic cation. A radiation-sensitive composition contains a polymer having an acid-releasable group, and a compound represented by formula (1). In the formula (1), A1 represents a (m+n+2)-valent aromatic ring group. Both —OH and —COO− are bound to a common benzene ring in A1. Atom to which —OH is bound is located next to an atom to which —COO31 is bound. R1 represents a monovalent group comprising a cyclic (thio)acetal structure. m is an integer of ≥0. n is an integer of ≥0. M+ represents a monovalent organic cation.

IPC Classes  ?

  • G03F 7/039 - Macromolecular compounds which are photodegradable, e.g. positive electron resists
  • G03F 7/22 - Exposing sequentially with the same light pattern different positions of the same surface

64.

RADIATION-SENSITIVE COMPOSITION AND PATTERN FORMATION METHOD

      
Application Number JP2024018785
Publication Number 2025/004621
Status In Force
Filing Date 2024-05-22
Publication Date 2025-01-02
Owner JSR CORPORATION (Japan)
Inventor
  • Kiriyama,kazuya
  • Omiya,takuya

Abstract

Provided are a radiation-sensitive composition and a pattern formation method capable of exhibiting sensitivity, CDU performance, and LWR performance at a sufficient level when a resist pattern is formed using next-generation technology. In the present invention, a radiation-sensitive composition contains: a polymer including structural units having an acid-dissociable group; a radiation-sensitive acid generator containing a first organic acid anion and a first onium cation; an acid diffusion control agent that contains a second organic acid anion and a second onium cation, and generates an acid having a higher pKa than an acid generated from the radiation-sensitive acid generator under exposure to radiation; and a solvent. The first organic acid anion contains an acid anion moiety and an aromatic ring having at least both a first substituent and a second substituent. The first substituent and the second substituent are each independently a hydroxy group, a sulfo group, or a sulfanyl group. At least one selected from the group consisting of the polymer, the radiation-sensitive acid generator, and the acid diffusion control agent contains an iodo group.

IPC Classes  ?

  • G03F 7/004 - Photosensitive materials
  • G03F 7/20 - ExposureApparatus therefor
  • G03F 7/039 - Macromolecular compounds which are photodegradable, e.g. positive electron resists

65.

COMPOSITION FOR INSULATING-FILM FORMATION, INSULATING FILM, ELECTRONIC DEVICE, MULTILAYER OBJECT, AND METHOD FOR PRODUCING MULTILAYER OBJECT

      
Application Number JP2024023167
Publication Number 2025/005134
Status In Force
Filing Date 2024-06-26
Publication Date 2025-01-02
Owner JSR CORPORATION (Japan)
Inventor
  • Nosaka Naoya
  • Tabata Yuuki
  • Takanashi Kazunori
  • Hamaguchi Hitoshi

Abstract

A composition for insulating-film formation which comprises: a polyfunctional acrylate having 2-6 acrylic groups in the molecule; a free-radical photopolymerization initiator; and a solvent having a boiling point at atmospheric pressure of 100-250°C and a surface tension of 20-34 mN/m.

IPC Classes  ?

66.

OPTICAL MEMBER, SENSOR MODULE, AND METHOD FOR MANUFACTURING OPTICAL MEMBER

      
Application Number JP2024021433
Publication Number 2025/004817
Status In Force
Filing Date 2024-06-13
Publication Date 2025-01-02
Owner JSR CORPORATION (Japan)
Inventor
  • Tanaka Yukie
  • Kawabe Yasunori
  • Kishida Hiroyuki

Abstract

[Problem] To provide: an optical member that accurately eliminates noise light impinging from the perpendicular direction, is capable of improving the detection intensity ratio T2/T1 between the transmissivity T1 of perpendicular light that is noise light and the transmissivity T2 of obliquely impinging signal light designed in consideration of Snell's law, and is adaptable to flexible devices; a sensor module using the optical member; and a manufacturing method for the optical member. [Solution] An optical member containing a compound A having an absorption maximum wavelength (λmax) at a wavelength of 581-1200 nm, and provided with a first optical portion having an average transmissivity of 20% or less at the absorption maximum wavelength (λmax) ± 20 nm, and a second optical portion having an average transmissivity of 70% or more at the absorption maximum wavelength (λmax) ± 20 nm, wherein the second optical portion has an inclination of 0.1° to 70° or -0.1° to -70°, measured from the normal to the surface of the optical member, with respect to the thickness direction of the optical member.

IPC Classes  ?

  • G02B 5/22 - Absorbing filters
  • G01J 1/02 - Photometry, e.g. photographic exposure meter Details
  • G01J 1/04 - Optical or mechanical part

67.

RADIATION-SENSITIVE COMPOSITION, PATTERN FORMATION METHOD, AND RADIATION-SENSITIVE ACID GENERATION AGENT

      
Application Number JP2024022037
Publication Number 2025/004904
Status In Force
Filing Date 2024-06-18
Publication Date 2025-01-02
Owner JSR CORPORATION (Japan)
Inventor
  • Nishikori,katsuaki
  • Taniguchi,takuhiro
  • Kiriyama,kazuya

Abstract

The present invention provides a radiation-sensitive composition and a pattern formation method with which it is possible to form a resist film in which development defects can be minizied and sensitivity and CDU can be exhibited at a sufficient level when a next-generation technology is applied. The present invention also provides a radiation-sensitive acid generation agent that can be applied to the radiation-sensitive composition. The radiation-sensitive composition contains a polymer (A) containing structural units (I) having an acid dissociable group, and a solvent (C), the radiation-sensitive composition meeting criteria (i) and/or (ii) below. (i) Contains a radiation-sensitive acid generator (B) containing a first organic acid anion and a first onium cation, the first onium cation containing a halogen-free electron-withdrawing group that contains no halogen atoms, and the first organic acid anion being a sulfonic acid anion that contains an iodine atom. (ii) The polymer (A) is a radiation-sensitive acid-generating polymer (A1) containing structural units (IV) having a second organic acid anion and a second onium cation, the second onium cation containing a halogen-free electron-withdrawing group that contains no halogen atoms, and the second organic acid anion being a sulfonic acid anion that contains an iodine atom.

IPC Classes  ?

68.

PHOTOSENSITIVE COMPOSITION, CURED PRODUCT AND METHOD FOR PRODUCING SAME, DISPLAY ELEMENT, AND IMAGING ELEMENT

      
Application Number JP2024023515
Publication Number 2025/005248
Status In Force
Filing Date 2024-06-28
Publication Date 2025-01-02
Owner JSR CORPORATION (Japan)
Inventor
  • Chung,kang-Go
  • Yoda,kyosuke
  • Kodama,seiichiro

Abstract

The purpose of the present invention is to provide: a photosensitive composition that undergoes little increase in viscosity even after a given period of time has elapsed, has exceptional storage stability, does not solidify when a coating slit nozzle or the like is used, and can be applied even after a given period of time has elapsed (has excellent coating properties over time); a cured film formed from the photosensitive composition; a method for producing the cured film; a display element provided with the cured film; and an imaging element provided with the cured film. The present invention relates to a photosensitive composition for forming an optical member, the photosensitive composition containing particles (A), a radically polymerizable compound (B), a photoradical generator (C), and a dehydrating agent (D), the dehydrating agent (D) containing an orthoester compound.

IPC Classes  ?

69.

RADIATION-SENSITIVE COMPOSITION, PATTERN FORMATION METHOD, AND ONIUM SALT COMPOUND

      
Application Number JP2024019163
Publication Number 2024/262245
Status In Force
Filing Date 2024-05-24
Publication Date 2024-12-26
Owner JSR CORPORATION (Japan)
Inventor
  • Egawa,fuyuki
  • Nemoto,ryuichi
  • Oshiro,taku
  • Miyao,kensuke
  • Inami,hajime

Abstract

Provided are: a radiation-sensitive composition that makes it possible to achieve substantial sensitivity, LWR performance, DOF performance, pattern rectangularity, CDU performance, and pattern circularity when a resist pattern is formed; a pattern formation method; and an onium salt compound. A radiation-sensitive composition according to the present invention includes an onium salt compound represented by formula (1), a polymer that includes a structural unit that has an acid-dissociable group, and a solvent. (In formula (1), A is a C1–40 monovalent organic group, R1and R2are each independently a hydrogen atom, a C1–20 monovalent fluorine-free organic group, a cyano group, a nitro group, a hydroxyl group, or an amino group, each of the R1s and R2s being the same or different when there are a plurality of R1s and R211 is an integer from 1 to 8, inclusive, and Z+ is a monovalent radiation-sensitive onium cation.)

IPC Classes  ?

  • G03F 7/004 - Photosensitive materials
  • C07C 317/10 - SulfonesSulfoxides having sulfone or sulfoxide groups bound to acyclic carbon atoms of an unsaturated carbon skeleton containing rings
  • C07C 317/12 - SulfonesSulfoxides having sulfone or sulfoxide groups bound to carbon atoms of rings other than six-membered aromatic rings
  • C07C 317/14 - SulfonesSulfoxides having sulfone or sulfoxide groups bound to carbon atoms of six-membered aromatic rings
  • C07C 317/18 - SulfonesSulfoxides having sulfone or sulfoxide groups and singly-bound oxygen atoms bound to the same carbon skeleton with sulfone or sulfoxide groups bound to acyclic carbon atoms of the carbon skeleton
  • C07C 317/44 - SulfonesSulfoxides having sulfone or sulfoxide groups and carboxyl groups bound to the same carbon skeleton
  • C07C 381/12 - Sulfonium compounds
  • C07D 307/00 - Heterocyclic compounds containing five-membered rings having one oxygen atom as the only ring hetero atom
  • C07D 307/33 - Oxygen atoms in position 2, the oxygen atom being in its keto or unsubstituted enol form
  • C07D 317/08 - Heterocyclic compounds containing five-membered rings having two oxygen atoms as the only ring hetero atoms having the hetero atoms in positions 1 and 3
  • C07D 317/72 - Heterocyclic compounds containing five-membered rings having two oxygen atoms as the only ring hetero atoms having the hetero atoms in positions 1 and 3 spiro-condensed with carbocyclic rings
  • C07D 321/10 - Seven-membered rings condensed with carbocyclic rings or ring systems
  • C07D 327/06 - Six-membered rings
  • C07D 333/16 - Radicals substituted by singly bound hetero atoms other than halogen by oxygen atoms
  • C07D 493/18 - Bridged systems
  • C08F 2/06 - Organic solvent
  • C08F 220/18 - Esters of monohydric alcohols or phenols of phenols or of alcohols containing two or more carbon atoms with acrylic or methacrylic acids
  • G03F 7/20 - ExposureApparatus therefor
  • G03F 7/038 - Macromolecular compounds which are rendered insoluble or differentially wettable
  • G03F 7/039 - Macromolecular compounds which are photodegradable, e.g. positive electron resists

70.

POLYPROPYLENE RESIN FOAMED PARTICLES AND METHOD FOR MANUFACTURING SAME

      
Application Number JP2024012704
Publication Number 2024/257436
Status In Force
Filing Date 2024-03-28
Publication Date 2024-12-19
Owner JSP CORPORATION (Japan)
Inventor
  • Sakamura Takumi
  • Ohta Hajime

Abstract

SS of the polyolefin resin composing the coating layer (3) is higher than 15 g/10 min.

IPC Classes  ?

71.

RADIATION-SENSITIVE COMPOSITION AND PATTERN FORMATION METHOD

      
Application Number JP2024016360
Publication Number 2024/257496
Status In Force
Filing Date 2024-04-26
Publication Date 2024-12-19
Owner JSR CORPORATION (Japan)
Inventor
  • Nishikori,katsuaki
  • Shiratani,motohiro
  • Omiya,takuya

Abstract

Provided are a radiation-sensitive composition and a pattern formation method wherein sensitivity, CDU performance, and development defect suppression can be demonstrated at a sufficient level when next-generation technology is applied. [Solution] This radiation-sensitive composition includes: a polymer that includes a structural unit (I) represented by formula (1); a high-fluorine-content polymer that has a higher mass content of fluorine atoms than the aforementioned polymer; one or more types of onium salts including an organic acid anion and an onium cation; and a solvent, wherein at least some of the organic acid anions in the onium salt or salts include an iodine-substituted aromatic ring structure. (In formula (1), Rαis a hydrogen atom, a fluorine atom, a methyl group, or a trifluoromethyl group; Ar is an aromatic ring with 5-20 members and a valence of (p+q+r+1); R11is a hydrogen atom or a C1-20 monovalent organic group; in cases in which a plurality of R11moieties are present, the plurality of R11moieties are the same as or different from each other; R12is a cyano group, a nitro group, an alkyl group, a fluorinated alkyl group, or an acyl group; in cases in which a plurality of R12moieties are present, the plurality of R12 moieties are the same as or different from each other; p and q are each independently an integer from 1 to 6; and r is an integer from 0 to 3.)

IPC Classes  ?

  • G03F 7/039 - Macromolecular compounds which are photodegradable, e.g. positive electron resists
  • G03F 7/004 - Photosensitive materials
  • G03F 7/20 - ExposureApparatus therefor

72.

THERMOSETTING RESIN COMPOSITION FOR FORMING WIRING BOARD, CURED PRODUCT, PREPREG, AND INTERLAYER INSULATING FILM

      
Application Number JP2024021280
Publication Number 2024/257781
Status In Force
Filing Date 2024-06-12
Publication Date 2024-12-19
Owner
  • JSR CORPORATION (Japan)
  • DENKA COMPANY LIMITED (Japan)
Inventor
  • Satonaka Eri
  • Iizuka Shunsuke
  • Ishigaki Yuhei
  • Nakano Tatsuya
  • Kanto Ryosuke

Abstract

Provided is a thermosetting resin composition for forming a wiring board, the thermosetting resin containing: a polymer (A) having a structural unit represented by formula (1-1); and a copolymer (B) having a structural unit derived from ethylene or α-olefin, a structural unit derived from an aromatic vinyl compound, and a structural unit derived from an aromatic polyfunctional vinyl compound. Also provided are a cured product, a prepreg, and an interlayer insulating film. The details of formula (1-1) are shown in the specification.

IPC Classes  ?

  • H05K 1/03 - Use of materials for the substrate
  • C08F 2/44 - Polymerisation in the presence of compounding ingredients, e.g. plasticisers, dyestuffs, fillers
  • C08G 65/40 - Macromolecular compounds obtained by reactions forming an ether link in the main chain of the macromolecule from hydroxy compounds or their metallic derivatives derived from phenols from phenols and other compounds
  • C08K 3/013 - Fillers, pigments or reinforcing additives
  • C08L 23/08 - Copolymers of ethene
  • C08L 25/08 - Copolymers of styrene
  • C08L 71/10 - Polyethers derived from hydroxy compounds or from their metallic derivatives from phenols

73.

POLYPROPYLENE RESIN FOAM PARTICLES

      
Application Number 18700608
Status Pending
Filing Date 2022-10-07
First Publication Date 2024-12-12
Owner JSP CORPORATION (Japan)
Inventor
  • Saito, Yukiya
  • Ohta, Hajime

Abstract

A polypropylene-based resin expanded bead, in which the melting point Tma of a polypropylene-based resin (a) constituting a core layer in an expanded state is 135° C. or higher and 155° C. or lower; a polypropylene-based resin (b) constituting a covering layer contains a propylene-based copolymer containing a propylene component, an ethylene component, and a butene component, as a main component; the difference [Tma−Tmb] between the melting point Tma of the polypropylene-based resin (a) and the melting point Tmb of the polypropylene-based resin (b) is 1° C. or more and 30° C. or less; the difference [Tmb−Tcb] between the melting point Tmb of the polypropylene-based resin (b) and the crystallization temperature Tcb of the polypropylene-based resin (b) is 40° C. or less; and the covering layer contains a higher fatty acid amide.

IPC Classes  ?

  • C08J 9/18 - Making expandable particles by impregnating polymer particles with the blowing agent
  • C08J 9/00 - Working-up of macromolecular substances to porous or cellular articles or materialsAfter-treatment thereof
  • C08J 9/12 - Working-up of macromolecular substances to porous or cellular articles or materialsAfter-treatment thereof using blowing gases generated by a previously added blowing agent by a physical blowing agent

74.

TWO-LAYER FILM OF MAGNETIC BODY AND INSULATOR, TUNNEL MAGNETORESISTIVE ELEMENT, AND MAGNETIC MEMORY

      
Application Number JP2024020707
Publication Number 2024/253160
Status In Force
Filing Date 2024-06-06
Publication Date 2024-12-12
Owner
  • JSR CORPORATION (Japan)
  • THE UNIVERSITY OF TOKYO (Japan)
  • TOHOKU UNIVERSITY (Japan)
Inventor
  • Toga,yuuta
  • Inukai,kouji
  • Koretsune,takashi
  • Nomoto,takuya
  • Arita,ryotaro
  • Tanaka,katsuhiro
  • Minami,susumu
  • Nakatsuji,satoru

Abstract

A two-layer film of a magnetic body and an insulator according to the present invention comprises an antiferromagnetic layer that has a hexagonal crystal structure, with at least one surface thereof being the (10-10) plane of the antiferromagnetic body, and an insulator layer that is composed of two, three, or four kinds of atoms layered on the (10-10) plane. A two-layer film of a magnetic body and an insulator according to the present invention comprises an antiferromagnetic layer that has a hexagonal crystal structure, with at least one surface thereof being the (0001) plane of the antiferromagnetic body, and an insulator layer that is composed of two, three, or four kinds of atoms layered on the (0001) plane. A tunnel magnetoresistive element according to the present invention comprises a second antiferromagnetic film layer that is layered on the insulator of the two-layer film. A magnetic memory according to the present invention comprises a plurality of the tunnel magnetoresistive elements.

IPC Classes  ?

  • H10N 50/10 - Magnetoresistive devices
  • H01L 29/82 - Types of semiconductor device controllable by variation of the magnetic field applied to the device
  • H10B 61/00 - Magnetic memory devices, e.g. magnetoresistive RAM [MRAM] devices

75.

PRODUCTION METHOD FOR SEMICONDUCTOR SUBSTRATES

      
Application Number 18699377
Status Pending
Filing Date 2022-09-21
First Publication Date 2024-12-12
Owner JSR CORPORATION (Japan)
Inventor Maruyama, Ken

Abstract

A production method for a semiconductor substrate includes: performing a vapor deposition of a metal compound or metal directly or indirectly onto a substrate to form a metal-containing resist film; and exposing the metal-containing resist film to light. The metal compound or metal includes an Au atom, a Cr atom, an Ag atom, an In atom, or a combination thereof. The method preferably further includes developing the metal-containing resist film after exposing. The vapor deposition is preferably performed by PVD or CVD. The metal compound preferably includes a metal complex, a metal halide, or an organometal.

IPC Classes  ?

  • G03F 7/16 - Coating processesApparatus therefor
  • C23C 16/18 - Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of metallic material from metallo-organic compounds
  • C23C 16/30 - Deposition of compounds, mixtures or solid solutions, e.g. borides, carbides, nitrides
  • C23C 16/455 - Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into the reaction chamber or for modifying gas flows in the reaction chamber
  • C23C 16/50 - Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges
  • C23C 16/56 - After-treatment
  • G03F 7/20 - ExposureApparatus therefor
  • H01L 21/033 - Making masks on semiconductor bodies for further photolithographic processing, not provided for in group or comprising inorganic layers

76.

METHOD FOR PRODUCING POLYPROPYLENE-BASED RESIN EXPANDED BEADS AND MOLDED ARTICLE OF POLYPROPYLENE-BASED RESIN EXPANDED BEADS

      
Application Number 18699674
Status Pending
Filing Date 2022-09-28
First Publication Date 2024-12-05
Owner JSP CORPORATION (Japan)
Inventor
  • Sakamura, Takumi
  • Ohta, Hajime

Abstract

A method for producing polypropylene-based resin expanded beads each having a through-hole by performing a first expanding step and a second expanding step is provided. In the first expanding step, tubular resin particles containing carbon black and having through-holes are dispersed in a dispersion medium and released to an environment under a low pressure, thereby obtaining first-step expanded beads having a bulk ratio of M1 times. In the second expanding step, the first-step expanded beads are further expanded to obtain polypropylene-based resin expanded beads having a bulk ratio of M2 times. The bulk ratio M1 is 5 times or more and 25 times or less. A ratio M2/M1 of the bulk ratio M2 to the bulk ratio M1 is 1.2 or more and 3.0 or less.

IPC Classes  ?

  • C08J 9/232 - Forming foamed products by sintering expandable particles
  • C08J 9/00 - Working-up of macromolecular substances to porous or cellular articles or materialsAfter-treatment thereof
  • C08J 9/18 - Making expandable particles by impregnating polymer particles with the blowing agent
  • C08K 3/04 - Carbon

77.

POLYOLEFIN-BASED RESIN FOAM PARTICLES AND MOLDED BODY OF POLYOLEFIN-BASED RESIN FOAM PARTICLES

      
Application Number JP2024018389
Publication Number 2024/247768
Status In Force
Filing Date 2024-05-17
Publication Date 2024-12-05
Owner JSP CORPORATION (Japan)
Inventor
  • Ito Yosuke
  • Chiba Takuya

Abstract

The present invention provides: polyolefin-based resin foam particles which exhibit good in-mold moldability and are capable of providing a molded body of foam particles, the molded body exhibiting excellent flame retardancy; and a molded body of polyolefin-based resin foam particles, the molded body having excellent flame retardancy. The polyolefin-based resin foam particles have a bulk density of 10 kg/m3to 100 kg/m3inclusive, contain a NOR-type hindered amine-based compound that is represented by a specific structural formula, and are configured so that the content of the NOR-type hindered amine-based compound in the polyolefin-based resin foam particles is 0.01% by mass to 3% by mass inclusive. The molded body of polyolefin-based resin foam particles has a density of 10 kg/m3to 100 kg/m3 inclusive, and is configured so that the content of the NOR-type hindered amine-based compound that is represented by a specific structural formula in the molded body of polyolefin-based resin foam particles is 0.01% by mass to 3% by mass inclusive.

IPC Classes  ?

  • C08J 9/16 - Making expandable particles
  • C08J 9/04 - Working-up of macromolecular substances to porous or cellular articles or materialsAfter-treatment thereof using blowing gases generated by a previously added blowing agent

78.

POLYPROPYLENE-BASED RESIN FOAM PARTICLE MOLDED BODY AND POLYPROPYLENE-BASED RESIN FOAM PARTICLE

      
Application Number JP2024018917
Publication Number 2024/247858
Status In Force
Filing Date 2024-05-22
Publication Date 2024-12-05
Owner JSP CORPORATION (Japan)
Inventor
  • Chiba Takuya
  • Masumoto Hisashi
  • Shimada Tomohito

Abstract

0120012000≤25(%)

IPC Classes  ?

79.

POLYOLEFIN RESIN FOAMED PARTICLES AND POLYOLEFIN RESIN FOAMED PARTICLE MOLDED ARTICLE

      
Application Number JP2024018918
Publication Number 2024/247859
Status In Force
Filing Date 2024-05-22
Publication Date 2024-12-05
Owner JSP CORPORATION (Japan)
Inventor
  • Hira Akinobu
  • Saito Yukiya

Abstract

The purpose of the present invention is to provide polyolefin resin foamed particles with through-holes, having small variation in expansion ratio, and to provide a foamed particle molded article having low variation in density of the molded article. Polyolefin resin foamed particles according to the present invention have through-holes, contain magnesium silicate present on the surface of the foamed particles, and have an abundance ratio of magnesium silicate on the surface of the foamed particles of 0.1% by mass to 1% by mass inclusive.

IPC Classes  ?

  • C08J 9/18 - Making expandable particles by impregnating polymer particles with the blowing agent
  • C08J 9/224 - Surface treatment

80.

METHOD FOR FILLING COLUMN WITH CHROMATOGRAPHY CARRIER, METHOD FOR STORING SLURRY, AND SLURRY

      
Application Number 18697074
Status Pending
Filing Date 2022-09-09
First Publication Date 2024-12-05
Owner JSR CORPORATION (Japan)
Inventor
  • Akiyama, Minato
  • Kobayashi, Kunihiko
  • Inoue, Yukiya
  • Kikuchi, Masahiro

Abstract

Provided is a method for filling a column with a chromatography carrier, including substituting a slurry with an aqueous solvent not containing a buffer, in which the slurry contains a target substance-capturing chromatography carrier, a buffer having an acid dissociation constant (pKa) within a range of ±1.0 of the isoelectric point of the carrier, and an aqueous solvent and has a pH of a liquid phase adjusted within a range of ±2.0 of the isoelectric point of the carrier, and filling a column with the slurry subjected to solvent substitution. The method may be advantageous for suppressing a decrease in liquid permeability and pressure resistance characteristics during liquid passage of a chromatography carrier when a solvent is substituted with an aqueous solvent not containing a buffer.

IPC Classes  ?

  • G01N 30/52 - Physical parameters
  • G01N 33/68 - Chemical analysis of biological material, e.g. blood, urineTesting involving biospecific ligand binding methodsImmunological testing involving proteins, peptides or amino acids

81.

LIQUID CRYSTAL DISPLAY DEVICE AND MANUFACTURING METHOD THEREFOR

      
Application Number 18685497
Status Pending
Filing Date 2022-08-22
First Publication Date 2024-11-28
Owner JSR CORPORATION (Japan)
Inventor
  • Kuroda, Yoshihiko
  • Miyachi, Koichi

Abstract

A first and/or second alignment film is a photo-alignment film on which alignment division is performed. Each pixel has multiple alignment regions having different alignment directions of liquid crystal molecules of a liquid crystal layer by the alignment division. The number of times of exposure in each alignment region for the alignment division is two or more and the same number among the regions; in each time of exposure for the alignment division, exposure is performed on two or more alignment regions along an arrangement direction, the previous numbers of times of exposure in alignment regions to be exposed in each times of exposure are the same among the regions; and the angle formed by the alignment direction of the liquid crystal molecules of the liquid crystal layer in each region of the alignment regions and a direction where the polarizing axis of a polarizing plate extends is 45°.

IPC Classes  ?

  • G02F 1/1337 - Surface-induced orientation of the liquid crystal molecules, e.g. by alignment layers
  • G02F 1/1335 - Structural association of cells with optical devices, e.g. polarisers or reflectors
  • G02F 1/137 - Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulatingNon-linear optics for the control of the intensity, phase, polarisation or colour based on liquid crystals, e.g. single liquid crystal display cells characterised by the electro-optical or magneto-optical effect, e.g. field-induced phase transition, orientation effect, guest-host interaction or dynamic scattering

82.

RADIATION-SENSITIVE COMPOSITION, PATTERN FORMATION METHOD, AND ONIUM SALT COMPOUND

      
Application Number JP2024015136
Publication Number 2024/241766
Status In Force
Filing Date 2024-04-16
Publication Date 2024-11-28
Owner JSR CORPORATION (Japan)
Inventor
  • Abe,yudai
  • Inami,hajime
  • Nemoto,ryuichi
  • Egawa,fuyuki
  • Miyake,masayuki

Abstract

Provided are: a radiation-sensitive composition which is capable of exhibiting sufficient levels of sensitivity, LWR performance, CDU performance and MEEF performance during formation of a resist pattern, and has satisfactory storage stability; a pattern formation method; and an onium salt compound. The radiation-sensitive composition comprises: an onium salt compound represented by formula (1); a polymer containing a structural unit having an acid-dissociable group; and a solvent. (In formula (1), A represents a monovalent organic group having 1 to 40 carbon atoms. R1and R2each independently represent a hydrogen atom, a cyano group, a nitro group, a hydroxy group, an alkoxy group, an alkylthio group, an amino group, a mercapto group, a monovalent hydrocarbon group having 1 to 20 carbon atoms, or a monovalent hydrocarbon group having 1 to 20 carbon atoms and substituted by at least one of a cyano group, a nitro group, a hydroxy group, an alkoxy group, an alkylthio group, an amino group, a mercapto group, a chlorine atom, a bromine atom and an iodine atom. When a plurality of R1's and a plurality of R2's are present, the plurality of R1's and the plurality of R2's are respectively identical or different from each other. At least one of R1and R211 represents an integer of 1 to 8. L represents *-COO-, *-OCO-, *-CO- or *-OCOO-, and *11 is 1, L is *-COO-, *-CO- or *-OCOO-. Z+ represents a monovalent radiation-sensitive onium cation.)

IPC Classes  ?

  • G03F 7/004 - Photosensitive materials
  • G03F 7/20 - ExposureApparatus therefor
  • G03F 7/038 - Macromolecular compounds which are rendered insoluble or differentially wettable
  • G03F 7/039 - Macromolecular compounds which are photodegradable, e.g. positive electron resists

83.

RADIATION-SENSITIVE COMPOSITION, PATTERN FORMING METHOD, AND ONIUM SALT COMPOUND

      
Application Number JP2024016060
Publication Number 2024/241820
Status In Force
Filing Date 2024-04-24
Publication Date 2024-11-28
Owner JSR CORPORATION (Japan)
Inventor
  • Inami,hajime
  • Egawa,fuyuki
  • Nemoto,ryuichi
  • Miyake,masayuki
  • Miyao,kensuke

Abstract

Provided are: a radiation-sensitive composition capable of exhibiting sensitivity, LWR performance and CDU performance each at a sufficient level when forming a resist pattern, and having good storage stability; a pattern forming method; and an onium salt compound. This radiation-sensitive composition contains: an onium salt compound represented by formula (1); a polymer containing a structural unit (I) having an acid-dissociable group; and a solvent. (In formula (1), W is a cyclic structure having 3-40 ring members and composed with two carbon atoms. The formula between carbon-carbon atoms represents a single or double bond. A is a group represented by formula (A-1), a group represented by formula (A-2), a group represented by formula (A-3), a group represented by formula (A-4), a group represented by formula (A-5), a group represented by formula (A-6), or a group represented by formula (A-7). (In formulae (A-3) and (A-4), RA1and RA2are each independently a monovalent hydrocarbon group having 1-20 carbon atoms. * is a bond to a carbon atom.) R1is a monovalent organic group having 1-20 carbon atoms, a cyano group, a nitro group, a carboxy group, a hydroxy group, an amino group, a halogen atom or a thiol group. In a case where multiple R1moieties are present, the multiple R111 is an integer between 0 and 4. Z+ is a monovalent radiation-sensitive onium cation.)

IPC Classes  ?

  • G03F 7/004 - Photosensitive materials
  • G03F 7/20 - ExposureApparatus therefor
  • G03F 7/038 - Macromolecular compounds which are rendered insoluble or differentially wettable
  • G03F 7/039 - Macromolecular compounds which are photodegradable, e.g. positive electron resists

84.

RADIATION-SENSITIVE COMPOSITION FOR FORMING GATE INSULATING FILM, PATTERN, METHOD FOR PRODUCING PATTERN, CURED FILM FOR GATE INSULATING FILM, SEMICONDUCTOR ELEMENT, ORGANIC ELECTROCHEMICAL TRANSISTOR, ORGANIC EL DISPLAY DEVICE, LIQUID CRYSTAL DISPLAY DEVICE, MICRO-LED DISPLAY DEVICE, QUANTUM DOT LIGHT-EMITTING DISPLAY DEVICE, WEARABLE DEVICE, ELECTRONIC SKIN DEVICE, BIOLOGICAL SENSOR, AND NEUROMORPHIC DEVICE

      
Application Number JP2024019011
Publication Number 2024/242171
Status In Force
Filing Date 2024-05-23
Publication Date 2024-11-28
Owner JSR CORPORATION (Japan)
Inventor Mimura,tokio

Abstract

The purpose of the present invention is to provide: a radiation-sensitive composition capable of forming a gate insulation film pattern (cured film) that is stretchable and is capable of exhibiting pattern formability, electric capacity, and chemical resistance at sufficient levels; a pattern (cured film) formed from the radiation-sensitive composition; a method for producing the pattern; a cured film for a gate insulation film; a semiconductor element provided with the cured film; an organic electrochemical transistor; an organic EL display device; a liquid crystal display device; a micro LED display device; a quantum dot light-emitting display device; a wearable device; an electronic skin device; a biological sensor; and a neuromorphic device. The present invention relates to a radiation-sensitive composition for forming a gate insulation film (excluding any composition containing cresol novolac and a quinone diazide compound), the radiation-sensitive composition containing: at least one polymer (A) selected from the group consisting of polymers (A1) that contain structural units (I) having an acid group, siloxane polymers (A2), and polyamic acids or polyamic acid esters (A3); a radiation-sensitive compound (B); and an ionic liquid (C).

IPC Classes  ?

  • G03F 7/023 - Macromolecular quinonediazidesMacromolecular additives, e.g. binders
  • G02F 1/1368 - Active matrix addressed cells in which the switching element is a three-electrode device
  • G09F 9/30 - Indicating arrangements for variable information in which the information is built-up on a support by selection or combination of individual elements in which the desired character or characters are formed by combining individual elements
  • G09F 9/33 - Indicating arrangements for variable information in which the information is built-up on a support by selection or combination of individual elements in which the desired character or characters are formed by combining individual elements being semiconductor devices, e.g. diodes
  • G09F 9/35 - Indicating arrangements for variable information in which the information is built-up on a support by selection or combination of individual elements in which the desired character or characters are formed by combining individual elements being liquid crystals
  • H01L 21/312 - Organic layers, e.g. photoresist
  • H01L 29/786 - Thin-film transistors
  • H05B 33/14 - Light sources with substantially two-dimensional radiating surfaces characterised by the chemical or physical composition or the arrangement of the electroluminescent material
  • H10K 59/12 - Active-matrix OLED [AMOLED] displays
  • H10K 59/125 - Active-matrix OLED [AMOLED] displays including organic TFTs [OTFT]
  • H10K 71/20 - Changing the shape of the active layer in the devices, e.g. patterning
  • H10K 85/10 - Organic polymers or oligomers
  • H10K 85/40 - Organosilicon compounds, e.g. TIPS pentacene

85.

RADIATION-SENSITIVE RESIN COMPOSITION AND PATTERN FORMATION METHOD

      
Application Number 18795534
Status Pending
Filing Date 2024-08-06
First Publication Date 2024-11-28
Owner JSR CORPORATION (Japan)
Inventor
  • Egawa, Fuyuki
  • Furukawa, Taiichi
  • Furukawa, Tsuyoshi
  • Inami, Hajime
  • Nemoto, Ryuichi

Abstract

A radiation-sensitive resin composition includes: a polymer comprising a structural unit (I) represented by a formula (1) and a structural unit different from the structural unit (I); a radiation-sensitive acid generator represented by a formula (α); and a solvent. RK1 is a hydrogen atom, a fluorine atom, or the like, L1 is an alkanediyl group, and Rf1 is a fluorinated hydrocarbon group. RW is a monovalent organic group having 3 to 40 carbon atoms that contains a cyclic structure, Rfa and Rfb are each independently a fluorine atom or the like, R11 and R12 are each independently a hydrogen atom, a fluorine atom, or the like, n1 is an integer of 1 to 4, n2 is an integer of 0 to 4, no carbonyl group is present between a sulfur atom of the sulfonic acid ion and the cyclic structure of RW, and Z+ is a monovalent onium cation. A radiation-sensitive resin composition includes: a polymer comprising a structural unit (I) represented by a formula (1) and a structural unit different from the structural unit (I); a radiation-sensitive acid generator represented by a formula (α); and a solvent. RK1 is a hydrogen atom, a fluorine atom, or the like, L1 is an alkanediyl group, and Rf1 is a fluorinated hydrocarbon group. RW is a monovalent organic group having 3 to 40 carbon atoms that contains a cyclic structure, Rfa and Rfb are each independently a fluorine atom or the like, R11 and R12 are each independently a hydrogen atom, a fluorine atom, or the like, n1 is an integer of 1 to 4, n2 is an integer of 0 to 4, no carbonyl group is present between a sulfur atom of the sulfonic acid ion and the cyclic structure of RW, and Z+ is a monovalent onium cation.

IPC Classes  ?

  • G03F 7/039 - Macromolecular compounds which are photodegradable, e.g. positive electron resists
  • C08F 220/28 - Esters containing oxygen in addition to the carboxy oxygen containing no aromatic rings in the alcohol moiety
  • C08F 220/36 - Esters containing nitrogen containing oxygen in addition to the carboxy oxygen
  • G03F 7/004 - Photosensitive materials
  • G03F 7/038 - Macromolecular compounds which are rendered insoluble or differentially wettable

86.

RADIATION-SENSITIVE RESIN COMPOSITION AND PATTERN FORMATION METHOD

      
Application Number 18796665
Status Pending
Filing Date 2024-08-07
First Publication Date 2024-11-28
Owner JSR CORPORATION (Japan)
Inventor
  • Nemoto, Ryuichi
  • Furukawa, Taiichi
  • Furukawa, Tsuyoshi
  • Inami, Hajime

Abstract

A radiation-sensitive resin composition includes: a polymer comprising a structural unit (I) represented by formula (1) and a structural unit different from the structural unit (I); an onium salt represented by formula (i); and a solvent. In formula (1), RK1 is a hydrogen atom, a fluorine atom, a methyl group, or a trifluoromethyl group, L1 is an alkanediyl group having 1 to 5 carbon atoms, and Rf1 is a fluorinated hydrocarbon group having 2 to 10 carbon atoms and 5 to 7 fluorine atoms. In formula (i), Ra1 is a substituted or unsubstituted monovalent organic group having 1 to 40 carbon atoms with no fluorine atom or fluorinated hydrocarbon group attached to an atom adjacent to the sulfur atom, and X+ is a monovalent onium cation. A radiation-sensitive resin composition includes: a polymer comprising a structural unit (I) represented by formula (1) and a structural unit different from the structural unit (I); an onium salt represented by formula (i); and a solvent. In formula (1), RK1 is a hydrogen atom, a fluorine atom, a methyl group, or a trifluoromethyl group, L1 is an alkanediyl group having 1 to 5 carbon atoms, and Rf1 is a fluorinated hydrocarbon group having 2 to 10 carbon atoms and 5 to 7 fluorine atoms. In formula (i), Ra1 is a substituted or unsubstituted monovalent organic group having 1 to 40 carbon atoms with no fluorine atom or fluorinated hydrocarbon group attached to an atom adjacent to the sulfur atom, and X+ is a monovalent onium cation.

IPC Classes  ?

  • G03F 7/039 - Macromolecular compounds which are photodegradable, e.g. positive electron resists
  • G03F 7/004 - Photosensitive materials

87.

RADIATION-SENSITIVE RESIN COMPOSITION AND METHOD FOR FORMING PATTERN

      
Application Number 18026002
Status Pending
Filing Date 2021-07-30
First Publication Date 2024-11-21
Owner JSR CORPORATION (Japan)
Inventor Maruyama, Ken

Abstract

Provided is a radiation-sensitive resin composition capable of exhibiting sensitivity and CDU performance at a sufficient level when a next-generation technology is applied, and a method for forming a pattern. A radiation-sensitive resin composition contains: a resin containing a structural unit (I) having an acid-dissociable group represented by the following formula (1) and a structural unit (II) having a phenolic hydroxy group, and contains neither an organic acid anion moiety nor an onium cation moiety; one or more onium salts containing an organic acid anion moiety and an onium cation moiety; and a solvent, wherein at least part of the onium cation moiety in the onium salt contains an aromatic ring structure having a fluorine atom. In the formula (1), RT is a hydrogen atom, a fluorine atom, a methyl group, or a trifluoromethyl group, and RX is a monovalent hydrocarbon group having 1 to 20 carbon atoms. Provided is a radiation-sensitive resin composition capable of exhibiting sensitivity and CDU performance at a sufficient level when a next-generation technology is applied, and a method for forming a pattern. A radiation-sensitive resin composition contains: a resin containing a structural unit (I) having an acid-dissociable group represented by the following formula (1) and a structural unit (II) having a phenolic hydroxy group, and contains neither an organic acid anion moiety nor an onium cation moiety; one or more onium salts containing an organic acid anion moiety and an onium cation moiety; and a solvent, wherein at least part of the onium cation moiety in the onium salt contains an aromatic ring structure having a fluorine atom. In the formula (1), RT is a hydrogen atom, a fluorine atom, a methyl group, or a trifluoromethyl group, and RX is a monovalent hydrocarbon group having 1 to 20 carbon atoms.

IPC Classes  ?

  • G03F 7/039 - Macromolecular compounds which are photodegradable, e.g. positive electron resists
  • C08F 220/18 - Esters of monohydric alcohols or phenols of phenols or of alcohols containing two or more carbon atoms with acrylic or methacrylic acids
  • G03F 7/004 - Photosensitive materials
  • G03F 7/038 - Macromolecular compounds which are rendered insoluble or differentially wettable

88.

RADIATION-SENSITIVE RESIN COMPOSITION, RESIN, COMPOUND, AND PATTERN FORMATION METHOD

      
Application Number 18691090
Status Pending
Filing Date 2022-09-01
First Publication Date 2024-11-21
Owner JSR CORPORATION (Japan)
Inventor
  • Nishikori, Katsuaki
  • Kiriyama, Kazuya
  • Kinoshita, Natsuko
  • Taniguchi, Takuhiro
  • Omiya, Takuya

Abstract

A radiation-sensitive resin composition includes a resin including a structural unit (I) represented by formula (1). Ra is a hydrogen atom or a substituted or unsubstituted monovalent hydrocarbon group having 1 to 10 carbon atoms; Ar1 is a substituted or unsubstituted divalent aromatic hydrocarbon group having 6 to 20 carbon atoms; m is 0 or 1; L1 is a single bond, or —O—, *—COO—, a divalent hydrocarbon group having 1 to 20 carbon atoms, or a combination thereof, and * is a bond on an Ar1 side; Ar2 is a monovalent aromatic hydrocarbon group having 6 to 20 carbon atoms and substituted with X; X is an iodine atom or a bromine atom; and n1 is an integer of 1 to nmax, wherein nmax is the number of Xs when all hydrogen atoms in the monovalent aromatic hydrocarbon group represented by the Ar2 are substituted with X. A radiation-sensitive resin composition includes a resin including a structural unit (I) represented by formula (1). Ra is a hydrogen atom or a substituted or unsubstituted monovalent hydrocarbon group having 1 to 10 carbon atoms; Ar1 is a substituted or unsubstituted divalent aromatic hydrocarbon group having 6 to 20 carbon atoms; m is 0 or 1; L1 is a single bond, or —O—, *—COO—, a divalent hydrocarbon group having 1 to 20 carbon atoms, or a combination thereof, and * is a bond on an Ar1 side; Ar2 is a monovalent aromatic hydrocarbon group having 6 to 20 carbon atoms and substituted with X; X is an iodine atom or a bromine atom; and n1 is an integer of 1 to nmax, wherein nmax is the number of Xs when all hydrogen atoms in the monovalent aromatic hydrocarbon group represented by the Ar2 are substituted with X.

IPC Classes  ?

  • G03F 7/004 - Photosensitive materials
  • G03F 7/039 - Macromolecular compounds which are photodegradable, e.g. positive electron resists

89.

RADIATION-SENSITIVE COMPOSITION FOR FORMING INSULATION FILM, RESIN FILM HAVING PATTERN, AND SEMICONDUCTOR CIRCUIT BOARD

      
Application Number 18284345
Status Pending
Filing Date 2022-03-22
First Publication Date 2024-11-21
Owner JSR CORPORATION (Japan)
Inventor
  • Tatara, Ryouji
  • Itou, Hirokazu
  • Ogawa, Taku
  • Nakafuji, Shin-Ya
  • Anabuki, Shoma

Abstract

A radiation-sensitive composition for forming an insulation film, includes: at least one polyfunctional compound (A) selected from the group consisting of a polyfunctional maleimide compound (A-1) and a polyfunctional styryl compound (A-2); a polymer (B) having a group Y that reacts with a maleimide group in the polyfunctional maleimide compound (A-1) or a styryl group in the polyfunctional styryl compound (A-2); and a photopolymerization initiator (C). The group Y is represented by Formula (Y1). In Formula (Y1), RY1 represents a hydrogen atom or an alkyl group having 1 to 5 carbon atoms, LY1 represents a single bond, an alkanediyl group having 1 to 5 carbon atoms, —C(O)O—, —NH—C(O)—NH—, or a group obtained by a combination thereof, and * represents a position bonded to a main chain or a side chain of the polymer (B). A radiation-sensitive composition for forming an insulation film, includes: at least one polyfunctional compound (A) selected from the group consisting of a polyfunctional maleimide compound (A-1) and a polyfunctional styryl compound (A-2); a polymer (B) having a group Y that reacts with a maleimide group in the polyfunctional maleimide compound (A-1) or a styryl group in the polyfunctional styryl compound (A-2); and a photopolymerization initiator (C). The group Y is represented by Formula (Y1). In Formula (Y1), RY1 represents a hydrogen atom or an alkyl group having 1 to 5 carbon atoms, LY1 represents a single bond, an alkanediyl group having 1 to 5 carbon atoms, —C(O)O—, —NH—C(O)—NH—, or a group obtained by a combination thereof, and * represents a position bonded to a main chain or a side chain of the polymer (B).

IPC Classes  ?

  • H05K 1/03 - Use of materials for the substrate
  • G03F 7/004 - Photosensitive materials
  • G03F 7/038 - Macromolecular compounds which are rendered insoluble or differentially wettable
  • G03F 7/32 - Liquid compositions therefor, e.g. developers

90.

RADIATION-SENSITIVE RESIN COMPOSITION, METHOD OF FORMING RESIST PATTERN, AND POLYMER

      
Application Number 18782428
Status Pending
Filing Date 2024-07-24
First Publication Date 2024-11-14
Owner JSR CORPORATION (Japan)
Inventor Maruyama, Ken

Abstract

A radiation-sensitive resin composition includes: a polymer including a first structural unit represented by formula (1), solubility of the polymer in a developer solution capable of being altered by an acid; and a compound represented by formula (2). R1 represents a hydrogen atom, or the like; R2 represents a group obtained by removing, from a substituted or unsubstituted aliphatic hydrocarbon ring having 3 to 30 ring atoms, two hydrogen atoms; and Ar1 represents a group obtained by removing one hydrogen atom from a substituted or unsubstituted aromatic hydrocarbon ring having 6 to 30 ring atoms. Z represents an acid-labile group; L1 represents *—O—CO— or —O—; Y represents an organic group having 1 to 30 carbon atoms, the organic group not comprising a cyclic acetal structure; A− represents a monovalent anion group; n is an integer of 1 to 5; and X+ represents a monovalent radiation-sensitive onium cation. A radiation-sensitive resin composition includes: a polymer including a first structural unit represented by formula (1), solubility of the polymer in a developer solution capable of being altered by an acid; and a compound represented by formula (2). R1 represents a hydrogen atom, or the like; R2 represents a group obtained by removing, from a substituted or unsubstituted aliphatic hydrocarbon ring having 3 to 30 ring atoms, two hydrogen atoms; and Ar1 represents a group obtained by removing one hydrogen atom from a substituted or unsubstituted aromatic hydrocarbon ring having 6 to 30 ring atoms. Z represents an acid-labile group; L1 represents *—O—CO— or —O—; Y represents an organic group having 1 to 30 carbon atoms, the organic group not comprising a cyclic acetal structure; A− represents a monovalent anion group; n is an integer of 1 to 5; and X+ represents a monovalent radiation-sensitive onium cation.

IPC Classes  ?

  • G03F 7/039 - Macromolecular compounds which are photodegradable, e.g. positive electron resists
  • G03F 7/004 - Photosensitive materials
  • G03F 7/16 - Coating processesApparatus therefor

91.

RADIATION-SENSITIVE COMPOSITION, RESIST PATTERN FORMATION METHOD, AND POLYMER

      
Application Number JP2024012734
Publication Number 2024/232181
Status In Force
Filing Date 2024-03-28
Publication Date 2024-11-14
Owner JSR CORPORATION (Japan)
Inventor
  • Omiya, Takuya
  • Nishimura, Souta
  • Mori, Shuto
  • Matsumura, Yushi
  • Nishikori, Katsuaki

Abstract

The present invention comprises: a polymer (A) which contains a structural unit (U1) having an acid-dissociable group, and has a carboxy group; and a radiation-sensitive acid generator (B) (excluding the polymer (A)). At least one compound that is selected from the group consisting of the polymer (A) and the radiation-sensitive acid generator (B) has an iodine group. The polymer (A) contains a structural unit (U2) having a carboxy group. In the radiation-sensitive composition, the carboxy group in the structural unit (U2) is bonded to a carbon atom that constitutes the main chain of the polymer (A), or the structural unit (U2) has a chain structure and the carboxy group is bonded to the chain structure, or the structural unit (U2) has an aromatic ring which is bonded to a carbon atom that constitutes the main chain of the polymer (A) and the carboxy group is bonded to the aromatic ring.

IPC Classes  ?

  • G03F 7/039 - Macromolecular compounds which are photodegradable, e.g. positive electron resists
  • C08F 212/14 - Monomers containing only one unsaturated aliphatic radical containing one ring substituted by hetero atoms or groups containing hetero atoms
  • C08F 220/30 - Esters containing oxygen in addition to the carboxy oxygen containing aromatic rings in the alcohol moiety
  • G03F 7/004 - Photosensitive materials
  • G03F 7/20 - ExposureApparatus therefor

92.

METHOD OF MANUFACTURING SEMICONDUCTOR SUBSTRATE, METHOD FOR FORMING RESIST UNDERLAYER FILM, AND CLEANING LIQUID

      
Application Number 18769554
Status Pending
Filing Date 2024-07-11
First Publication Date 2024-11-07
Owner JSR CORPORATION (Japan)
Inventor
  • Ozaki, Yuki
  • Hirabayashi, Hiroki
  • Hirasawa, Kengo
  • Serizawa, Ryuichi

Abstract

A method for manufacturing a semiconductor substrate, includes: applying a composition for forming a resist underlayer film directly or indirectly to a substrate to form a resist underlayer film; cleaning a periphery of the substrate with a cleaning liquid; and after cleaning the periphery, forming a resist pattern directly or indirectly on the resist underlayer film. The composition for forming a resist underlayer film includes: a metal compound; and a solvent. The cleaning liquid includes an organic acid.

IPC Classes  ?

  • G03F 7/11 - Photosensitive materials characterised by structural details, e.g. supports, auxiliary layers having cover layers or intermediate layers, e.g. subbing layers
  • C11D 7/26 - Organic compounds containing oxygen
  • C11D 7/50 - Solvents
  • G03F 7/004 - Photosensitive materials

93.

RADIATION-SENSITIVE RESIN COMPOSITION AND METHOD FOR FORMING PATTERN

      
Application Number 18685539
Status Pending
Filing Date 2022-08-30
First Publication Date 2024-11-07
Owner JSR CORPORATION (Japan)
Inventor Maruyama, Ken

Abstract

A radiation-sensitive resin composition includes a resin, an acid diffusion controlling agent represented by formula (a), and a solvent. The resin includes: at least one structural unit selected from the group consisting of a structural unit represented by formula (1) and a structural unit represented by formula (2); and a structural unit including a phenolic hydroxy group. Rw is a monovalent organic group having 1 to 20 carbon atoms, a hydroxy group, or an amino group; Lq is a divalent linking group; Z+ is a monovalent radiation-sensitive onium cation; q1 is an integer of 1 to 4; q2 is an integer of 0 to 3; q3 is an integer of 1 to 3; and an upper limit of q1+q2+q3 is 6. A radiation-sensitive resin composition includes a resin, an acid diffusion controlling agent represented by formula (a), and a solvent. The resin includes: at least one structural unit selected from the group consisting of a structural unit represented by formula (1) and a structural unit represented by formula (2); and a structural unit including a phenolic hydroxy group. Rw is a monovalent organic group having 1 to 20 carbon atoms, a hydroxy group, or an amino group; Lq is a divalent linking group; Z+ is a monovalent radiation-sensitive onium cation; q1 is an integer of 1 to 4; q2 is an integer of 0 to 3; q3 is an integer of 1 to 3; and an upper limit of q1+q2+q3 is 6.

IPC Classes  ?

  • G03F 7/039 - Macromolecular compounds which are photodegradable, e.g. positive electron resists
  • G03F 7/20 - ExposureApparatus therefor

94.

METHOD FOR PRODUCING SURFACE-TREATED SUBSTRATE, METHOD FOR SELECTIVELY MODIFYING SUBSTRATE SURFACE, COMPOSITION, AND COMPOUND

      
Application Number JP2024014597
Publication Number 2024/225048
Status In Force
Filing Date 2024-04-10
Publication Date 2024-10-31
Owner JSR CORPORATION (Japan)
Inventor
  • Komatsu, Hiroyuki
  • Hagi, Shin-Ichirou
  • Suhara, Ryou

Abstract

According to the present invention, manufactured is a surface-treated substrate by a method including a step for selectively modifying the surface of a substrate by coating the surface of the substrate with a composition. The composition contains: an onium salt having a nitrogen-containing heterocycle and a monovalent organic group having 4 or more carbon atoms; and 1 mass% or more of water with respect to the total amount of the composition.

IPC Classes  ?

95.

METHOD FOR PRODUCING METABOLICALLY ACTIVATED LIVER ORGANOID, COMPOSITION, AND METHOD FOR EVALUATING TEST SUBSTANCE

      
Application Number JP2024016542
Publication Number 2024/225466
Status In Force
Filing Date 2024-04-26
Publication Date 2024-10-31
Owner
  • JSR CORPORATION (Japan)
  • KEIO UNIVERSITY (Japan)
Inventor
  • Okada Ryo
  • Sato Toshiro
  • Igarashi Ryo

Abstract

A method for producing a metabolically activated liver organoid, said method comprising a step for culturing primary hepatocytes or hepatocyte-like cells in a differentiation culture medium to obtain a metabolically activated liver organoid, wherein the differentiation culture medium contains: one or two types of agonist selected from the group consisting of growth hormone receptor agonists and prolactin receptor agonists; and a glucocorticoid receptor agonist.

IPC Classes  ?

  • C12N 5/071 - Vertebrate cells or tissues, e.g. human cells or tissues
  • C12N 1/00 - Microorganisms, e.g. protozoaCompositions thereofProcesses of propagating, maintaining or preserving microorganisms or compositions thereofProcesses of preparing or isolating a composition containing a microorganismCulture media therefor
  • C12Q 1/02 - Measuring or testing processes involving enzymes, nucleic acids or microorganismsCompositions thereforProcesses of preparing such compositions involving viable microorganisms

96.

CHROMATOGRAPHIC BED INSERT

      
Application Number 18293639
Status Pending
Filing Date 2022-08-16
First Publication Date 2024-10-24
Owner JSR CORPORATION (Japan)
Inventor
  • Bailey, Daniel M.
  • Stroehlein, Guido

Abstract

A chromatographic bed insert includes a base having openings and an array of projection members positioned on the base and projecting substantially perpendicular to the base. The chromatographic bed insert has a displacement volume % D which is less than 50% of a volume defined by the chromatographic bed insert and is structured to reduce a hydraulic radius RH of a chromatography bed including the chromatographic bed insert by at least 25% compared to a corresponding chromatography bed which does not include the chromatographic bed insert.

IPC Classes  ?

  • B01D 15/20 - Selective adsorption, e.g. chromatography characterised by constructional or operational features relating to the conditioning of the sorbent material
  • G01N 30/60 - Construction of the column

97.

ORGANOID PRODUCTION METHOD, CULTURE MEDIUM FOR ORGANOID PRODUCTION, ORGANOID, AND TEST SUBSTANCE EVALUATION METHOD

      
Application Number 18613608
Status Pending
Filing Date 2024-03-22
First Publication Date 2024-10-17
Owner JSR CORPORATION (Japan)
Inventor
  • Arai, Kazuya
  • Itoh, Manabu
  • Shoji, Kentaro
  • Sugimoto, Natsumi
  • Okada, Ryo

Abstract

An organoid production method includes culturing a human stem cell in a culture medium containing a cyclic peptide having an amino acid sequence set forth in Formula (1) or a pharmaceutically acceptable salt of the cyclic peptide [in Formula (1), X1 to X6 each represent a specific modified amino acid, X7 represents any amino acid residue, R is absent or represents a C-terminal modification group, n is an integer of 0 or 1, PeG is N-(2-phenylethyl)-glycine, and Nal1 is β-(1-naphthyl)-L-alanine]. An organoid production method includes culturing a human stem cell in a culture medium containing a cyclic peptide having an amino acid sequence set forth in Formula (1) or a pharmaceutically acceptable salt of the cyclic peptide [in Formula (1), X1 to X6 each represent a specific modified amino acid, X7 represents any amino acid residue, R is absent or represents a C-terminal modification group, n is an integer of 0 or 1, PeG is N-(2-phenylethyl)-glycine, and Nal1 is β-(1-naphthyl)-L-alanine].

IPC Classes  ?

  • C12N 5/071 - Vertebrate cells or tissues, e.g. human cells or tissues

98.

RADIOACTIVE-RAY-SENSITIVE RESIN COMPOSITION AND PATTERN FORMATION METHOD

      
Application Number JP2023046872
Publication Number 2024/209754
Status In Force
Filing Date 2023-12-27
Publication Date 2024-10-10
Owner JSR CORPORATION (Japan)
Inventor
  • Hachiya,asuka
  • Nishikori,katsuaki
  • Shiratani,motohiro
  • Fuchiwaki,junta
  • Miyazaki,aya

Abstract

Provided are: a radioactive-ray-sensitive resin composition which makes it possible to form a resist film having satisfactory storage stability and also having excellent sensitivity and LWR performance when a next-generation technology is applied; and a pattern formation method. This radioactive-ray-sensitive resin composition contains: a radioactive-ray-sensitive onium salt including a fluorine atom at a cation portion; a compound represented by formula (H); and a resin including a structural unit having an acid-dissociable group. (In formula (H), R1-R3 each independently represent a substituted or unsubstituted aliphatic hydrocarbon group having 1-20 carbon atoms.)

IPC Classes  ?

  • G03F 7/004 - Photosensitive materials
  • C07D 307/58 - One oxygen atom, e.g. butenolide
  • C07D 317/70 - Heterocyclic compounds containing five-membered rings having two oxygen atoms as the only ring hetero atoms having the hetero atoms in positions 1 and 3 ortho- or peri-condensed with carbocyclic rings or ring systems condensed with ring systems containing two or more relevant rings
  • C08F 12/14 - Monomers containing only one unsaturated aliphatic radical containing one ring substituted by hetero atoms or groups containing hetero atoms
  • G03F 7/039 - Macromolecular compounds which are photodegradable, e.g. positive electron resists
  • G03F 7/20 - ExposureApparatus therefor

99.

RADIATION-SENSITIVE COMPOSITION, METHOD FOR FORMING PATTERN, AND ONIUM SALT

      
Application Number JP2024010654
Publication Number 2024/209925
Status In Force
Filing Date 2024-03-19
Publication Date 2024-10-10
Owner JSR CORPORATION (Japan)
Inventor
  • Nemoto,ryuichi
  • Hikami,yuichi
  • Mita,michihiro
  • Miyake,masayuki
  • Inami,hajime

Abstract

Provided are: a radiation-sensitive composition able to form a resist film or a pattern that is excellent in terms of sensitivity, LWR performance, DOF performance, pattern squareness, CDU performance, pattern circularity, EL performance and pattern collapse resistance; a method for forming a pattern; and an onium salt. The radiation-sensitive composition contains: an onium salt represented by formula (1); a polymer containing a structural unit having an acid-dissociable group; and a solvent. (In formula (1), Q1and Q2each independently denote a carbon atom or a nitrogen atom. However, at least one of Q1and Q2is a carbon atom. W is a monocyclic or polycyclic non-aromatic ring structure constituted from 3-40 ring-forming members in addition to Q1and Q2in the formula. The formula between Q1and Q2in the formula denotes a single bond or a double bond. (AAA) R1is a monovalent organic group having 1-20 carbon atoms, a nitro group, a hydroxyl group, an amino group, a thiol group, a cyano group, a carboxyl group or a halogen atom. In a case where multiple R1moieties are present, the multiple R111 is an integer between 0 and 4. Z+ is a monovalent onium cation.)

IPC Classes  ?

  • G03F 7/004 - Photosensitive materials
  • C07D 307/00 - Heterocyclic compounds containing five-membered rings having one oxygen atom as the only ring hetero atom
  • C07D 307/33 - Oxygen atoms in position 2, the oxygen atom being in its keto or unsubstituted enol form
  • C07D 317/72 - Heterocyclic compounds containing five-membered rings having two oxygen atoms as the only ring hetero atoms having the hetero atoms in positions 1 and 3 spiro-condensed with carbocyclic rings
  • C07D 321/10 - Seven-membered rings condensed with carbocyclic rings or ring systems
  • C07D 327/06 - Six-membered rings
  • C07D 327/08 - [b, e]-condensed with two six-membered carbocyclic rings
  • C07D 333/46 - Heterocyclic compounds containing five-membered rings having one sulfur atom as the only ring hetero atom not condensed with other rings substituted on the ring sulfur atom
  • C07D 333/76 - Dibenzothiophenes
  • C07D 493/02 - Heterocyclic compounds containing oxygen atoms as the only ring hetero atoms in the condensed system in which the condensed system contains two hetero rings
  • C07D 497/20 - Spiro-condensed systems
  • C08F 20/18 - Esters of monohydric alcohols or phenols of phenols or of alcohols containing two or more carbon atoms with acrylic or methacrylic acids
  • G03F 7/20 - ExposureApparatus therefor
  • G03F 7/038 - Macromolecular compounds which are rendered insoluble or differentially wettable
  • G03F 7/039 - Macromolecular compounds which are photodegradable, e.g. positive electron resists

100.

COMPOSITION FOR PRODUCING BILE ACIDS

      
Application Number 17793280
Status Pending
Filing Date 2021-01-18
First Publication Date 2024-10-03
Owner JSR CORPORATION (Japan)
Inventor
  • Hirose, Nobuyoshi
  • Honda, Kenya
  • Sato, Yuko
  • Atarashi, Koji
  • Narushima, Seiko
  • Arai, Yasumichi
  • Takeshita, Kozue
  • Sasajima, Satoshi

Abstract

The present inventors have found that the content ratios of isoalloLCA, 3-oxoLCA, alloLCA, and 3-oxoalloLCA in the feces of centenarians are higher than those of younger ones, and have also identified gut microbiomes peculiar to centenarians involved in the production of these bile acids. Furthermore, it has been found that these bile acids, enzymes involved in the production thereof, and bacteria producing the enzymes reduce the risk of infection with pathogens, prostate cancer, and the like, and are involved in longevity.

IPC Classes  ?

  • A61K 35/74 - Bacteria
  • A61P 31/04 - Antibacterial agents
  • C12N 1/20 - BacteriaCulture media therefor
  • C12N 9/04 - Oxidoreductases (1.), e.g. luciferase acting on CHOH groups as donors, e.g. glucose oxidase, lactate dehydrogenase (1.1)
  • C12P 33/06 - Hydroxylating
  • G01N 33/569 - ImmunoassayBiospecific binding assayMaterials therefor for microorganisms, e.g. protozoa, bacteria, viruses
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