The present invention is a polymer containing: a structural unit of general formula (1) and/or (2); and a structural unit of general formula (3) and/or (4), where X1 represents a tetravalent organic group, R1 to R4 each represent a monovalent organic group or a hydrogen atom, provided that at least one is a monovalent organic group, L represents a divalent organic group or a divalent atom, X2 represents a divalent organic group, X3 represents a tetravalent organic group, “s” represents 0 or 1, Z represents a divalent bonding group, and X4 represents a divalent organic group. This provides a polymer soluble in an aqueous alkaline solution and usable as a base resin for positive and negative photosensitive resin compositions which enable fine pattern formation, provide high resolution, and have excellent mechanical characteristics even when cured at low temperatures.
The present invention is a polymer containing: a structural unit of general formula (1) and/or (2); and a structural unit of general formula (3) and/or (4), where X1 represents a tetravalent organic group, R1 to R4 each represent a monovalent organic group or a hydrogen atom, provided that at least one is a monovalent organic group, L represents a divalent organic group or a divalent atom, X2 represents a divalent organic group, X3 represents a tetravalent organic group, “s” represents 0 or 1, Z represents a divalent bonding group, and X4 represents a divalent organic group. This provides a polymer soluble in an aqueous alkaline solution and usable as a base resin for positive and negative photosensitive resin compositions which enable fine pattern formation, provide high resolution, and have excellent mechanical characteristics even when cured at low temperatures.
G03F 7/038 - Composés macromoléculaires rendus insolubles ou sélectivement mouillables
C08G 73/10 - PolyimidesPolyester-imidesPolyamide-imidesPolyamide-acides ou précurseurs similaires de polyimides
G03F 7/00 - Production par voie photomécanique, p. ex. photolithographique, de surfaces texturées, p. ex. surfaces impriméesMatériaux à cet effet, p. ex. comportant des photoréservesAppareillages spécialement adaptés à cet effet
G03F 7/039 - Composés macromoléculaires photodégradables, p. ex. réserves positives sensibles aux électrons
G03F 7/16 - Procédés de couchageAppareillages à cet effet
H01L 21/027 - Fabrication de masques sur des corps semi-conducteurs pour traitement photolithographique ultérieur, non prévue dans le groupe ou
2.
ORGANOPOLYSILOXANE AND ROOM TEMPERATURE-CURABLE ORGANOPOLYSILOXANE COMPOSITION CONTAINING SAME
An organopolysiloxane according to the present invention, having a structural unit ratio represented by formula (1), provides a room temperature-curable composition that has excellent curability and stability even when a solvent is not used, and that is capable of producing a cured product having high hardness and high transparency.
An organopolysiloxane according to the present invention, having a structural unit ratio represented by formula (1), provides a room temperature-curable composition that has excellent curability and stability even when a solvent is not used, and that is capable of producing a cured product having high hardness and high transparency.
An organopolysiloxane according to the present invention, having a structural unit ratio represented by formula (1), provides a room temperature-curable composition that has excellent curability and stability even when a solvent is not used, and that is capable of producing a cured product having high hardness and high transparency.
(R1 and R2 each represent an alkyl group having 1-12 carbon atoms or an aryl group having 6-10 carbon atoms; k represents an integer of 1-3; m represents a number of 5-100; n represents 2 or 3; R3, R4, and R5 each represent an alkyl group having 1-12 carbon atoms, an alkenyl group having 2-8 carbon atoms, an aryl group having 6-10 carbon atoms, an aralkyl group having 7-10 carbon atoms, an alkoxy group having 1-4 carbon atoms, or a hydroxy group; and a, b, c, d, e, and f each represent a number satisfying a>0, b>0, c≥0, d>0, e>0, and f≥0, as well as a+b+c+d+e+f=1.)
C08G 77/50 - Composés macromoléculaires obtenus par des réactions créant dans la chaîne principale de la macromolécule une liaison contenant du silicium, avec ou sans soufre, azote, oxygène ou carbone dans lesquels au moins deux atomes de silicium, mais pas la totalité, sont liés autrement que par des atomes d'oxygène par des liaisons au carbone
C08G 77/00 - Composés macromoléculaires obtenus par des réactions créant dans la chaîne principale de la macromolécule une liaison contenant du silicium, avec ou sans soufre, azote, oxygène ou carbone
C08G 77/08 - Procédés de préparation caractérisés par les catalyseurs utilisés
C08K 5/5425 - Composés contenant du silicium contenant de l'oxygène contenant au moins une liaison C=C
3.
HYDROPHOBIC CELLULOSE NANOFIBER, HYDROPHOBIC CELLULOSE NANOFIBER DISPERSION, AND COSMETIC
A hydrophobic cellulose nanofiber including (A) a cellulose nanofiber and (B) isocyanate group-containing organopolysiloxane, wherein the isocyanate group-containing organopolysiloxane is bonded to a hydroxy group of the cellulose nanofiber through a urethane bond. By this, it is possible to provide hydrophobic cellulose nanofibers that can be dispersed in liquid oils at room temperature, especially in silicone oils, and a dispersion medium for the same.
nnnnnnnnnnn is the relative permittivity of the respective layer at an intermediate frequency of the target communication frequency band, λ is the radio wave wavelength (mm) at the intermediate frequency, N is a natural number from 1 to 100, and n is the number of the respective layer.) (2): 0.5N–0.2≤d∙√ε/λ≤0.5N+0.2
E06B 3/66 - Blocs comprenant plusieurs panneaux de verre ou analogues qui sont espacés et fixés les uns aux autres de façon permanente, p. ex. le long des bords
H01Q 1/22 - SupportsMoyens de montage par association structurale avec d'autres équipements ou objets
H01Q 1/42 - Enveloppes non intimement mécaniquement associées avec les éléments rayonnants, p. ex. radome
NATIONAL INSTITUTE OF ADVANCED INDUSTRIAL SCIENCE AND TECHNOLOGY (Japon)
INSTITUTE OF SCIENCE TOKYO (Japon)
Inventeur(s)
Noguchi Hitoshi
Makino Toshiharu
Ogura Masahiko
Kato Hiromitsu
Haruyama Moriyoshi
Kajiyama Kenichi
Kainuma Yuta
Hatano Yuji
Iwasaki Takayuki
Hatano Mutsuko
Abrégé
The present invention provides a method for producing a diamond substrate by forming a diamond crystal on a base substrate by a CVD method, wherein in order to form an NVC-containing diamond crystal layer on at least a part of the diamond crystal, a starting material gas contains 0.005% to 7.000% by volume inclusive of a hydrocarbon gas, 85.000% by volume or more but less than 99.995% by volume of a hydrogen gas, and 5.0 × 10-5% to 8.000% by volume inclusive of a nitrogen gas or a nitride gas, and a 12C concentrated hydrocarbon gas which has a higher ratio of a 12C constituent hydrocarbon gas than a natural hydrocarbon gas is used as the hydrocarbon gas in the starting material gas. As a result, the present invention provides a method for producing a diamond substrate, with which it is possible to form a diamond crystal that has a high orientation in the NV axis (for example, high [111] orientation) and high-density nitrogen-vacancy centers (NVC) with a single spin by performing CVD on the base substrate under prescribed conditions.
C30B 25/20 - Croissance d'une couche épitaxiale caractérisée par le substrat le substrat étant dans le même matériau que la couche épitaxiale
H01L 21/205 - Dépôt de matériaux semi-conducteurs sur un substrat, p. ex. croissance épitaxiale en utilisant la réduction ou la décomposition d'un composé gazeux donnant un condensat solide, c.-à-d. un dépôt chimique
6.
REFLECTIVE PHOTOMASK BLANK AND METHOD FOR MANUFACTURING REFLECTIVE PHOTOMASK BLANK
A reflective photomask blank has a substrate 10; and a multilayer reflective film 50. The multilayer reflective film 50 has a periodic stacked structure in which a low refractive index layer 30 containing ruthenium (Ru), a high refractive index layer 20 containing silicon (Si), and a diffusion prevention layer 40. The diffusion prevention layer 40 is formed in contact with the low refractive index layer 30 on both or one of a side of the low refractive index layer 30 close to the substrate 10 and a side of the low refractive index layer 30 away from the substrate 10. The diffusion prevention layer 40 is one or more sublayers selected from a layer containing a silicon nitride (SiN), a layer containing silicon carbide (Sic), a layer containing molybdenum (Mo), a layer containing a molybdenum nitride (MoN), and a layer containing molybdenum carbide (MoC).
A negative electrode active material contains negative electrode active material particles, in which the negative electrode active material particles contain silicon oxide particles coated with a carbon layer, and the carbon layer has a peak position attributed to a G band in a range of more than 1590 cm−1 and 1597 cm−1 or less in a Raman spectrum obtained from Raman spectrometry for at least a part of the carbon layer. This can provide the negative electrode active material capable of improving cycle characteristics when used as the negative electrode active material of a secondary battery.
The coating material for photolithography contains a surfactant having no perfluoroalkyl structure. The coating material for photolithography contains 0.0001 to 3 wt % of a surfactant made from a resin having an aromatic group substituted with a fluorine atom, a trifluoromethoxy group, a difluoromethoxy group, a trifluoromethylthio group, or a difluoromethylthio group.
A tertiary ester-containing aromatic vinyl monomer is prepared by reacting an N-acylimidazole compound with a tertiary alcohol compound in the presence of a metal alkoxide as a reaction promoter. The tertiary ester-containing aromatic vinyl monomer of quality is prepared at a high efficiency and is applicable to resist compositions adapted for the EB and EUV lithography processes.
C08F 220/12 - Esters des alcools ou des phénols monohydriques
C08F 220/18 - Esters des alcools ou des phénols monohydriques des phénols ou des alcools contenant plusieurs atomes de carbone avec l'acide acrylique ou l'acide méthacrylique
A reflective photomask blank has: a substrate 10; a reflective multilayer film 20 that is formed on one main surface of the substrate 10 and reflects the exposure light; a protective film 50 formed in contact with the reflective multilayer film 20; and an absorbing film 70 that is formed on the protective film 50 and absorbs the exposure light. The protective film 50 is formed using a film containing ruthenium (Ru). The absorbing film 70 is formed using a single-layer film containing tantalum (Ta) and nitrogen (N), and has a content of nitrogen of 30 atom % or more and less than 60 atom %. Contrast between light reflected from a surface of the protective film 50 and light reflected on a surface of the absorbing film 70 with respect to light having a wavelength of 193 nm to 248 nm is 20% or more.
C03C 17/09 - Traitement de surface du verre, p. ex. du verre dévitrifié, autre que sous forme de fibres ou de filaments, par revêtement par des métaux par dépôt à partir d'une phase vapeur
C03C 17/34 - Traitement de surface du verre, p. ex. du verre dévitrifié, autre que sous forme de fibres ou de filaments, par revêtement avec au moins deux revêtements ayant des compositions différentes
C03C 17/36 - Traitement de surface du verre, p. ex. du verre dévitrifié, autre que sous forme de fibres ou de filaments, par revêtement avec au moins deux revêtements ayant des compositions différentes un revêtement au moins étant un métal
11.
METHOD OF MANUFACTURING SOLID PHARMACEUTICAL PREPARATION COATED WITH SOLVENT-FREE COATING MATERIAL
Provided is a method of manufacturing a solid pharmaceutical preparation which enables the coating using spraying of powder, containing HPMCAS, alone and requiring only a single layering process. The method of manufacturing a solid pharmaceutical preparation coated with a solvent-free coating material essentially includes the steps of: mixing a powdered hydroxypropylmethylcellulose acetate succinate, a powdered plasticizer, and a powdered wetting agent in advance, as a preliminary mixing step, to prepare a precursor mixture; mixing the precursor mixture and a solid pharmaceutical preparation, as a mixing step, to produce a mixture product; and heating the mixture product, as a heating step, to obtain a coated solid pharmaceutical preparation.
The present invention is an aldimine-modified silicone represented by formula (1). Formula (1): (AR121/2aa(R122/2bb(R13/24/24/2)d (In this formula, A is an aldimine group represented by formula (2), each R1is independently a C1-10 monovalent hydrocarbon group, a satisfies 2 ≤ a ≤ 5, b satisfies 0 < b ≤ 200, c satisfies 0 ≤ c ≤ 1, d satisfies 0 ≤ d ≤ 1, and 2 ≤ a + b + c + d ≤ 200 is satisfied.) Formula (2): -Q1-CH=N-R2(In this formula, Q1is a C2-10 divalent hydrocarbon group, and R2 is a C1-10 monovalent hydrocarbon group.) In view of the above, provided are an aldimine-modified silicone and a method for producing said aldimine-modified silicone which make long-term single-liquid storage of a silicone resin composition possible without chemically modifying a polyamine compound.
C08G 77/388 - Polysiloxanes modifiés par post-traitement chimique contenant des atomes autres que le carbone, l'hydrogène, l'oxygène ou le silicium contenant de l'azote
This filtration membrane regeneration method comprises a chemical liquid cleaning step in which a filtration membrane is cleaned using a chemical liquid containing 0.1 wt% to 14 wt% of fluoride ions.
The present invention provides a flame-retardant aromatic polycarbonate resin composition which contains (A) an aromatic polycarbonate resin, (B) an organohydrogenpolysiloxane that is represented by formula (1), and (C) an organic metal salt that does not contain fluorine, and which contains a specific amount of an aromatic polycarbonate resin that has a specific MVR. Formula (1): [(R1O)(R221/2aa[(R331/2bb[(H)(R42/2cxx(R52-x2/2dd[(R622/2ee[(R73/2ff (In the formula, R1to R7 each represent an alkyl group or the like; Ar represents an aryl group; x is 1 or 2; 0 < a ≤ 0.03; 0 < b ≤ 0.30; 0 ≤ c ≤ 0.45; 0.20 ≤ d ≤ 0.70; 0 ≤ e ≤ 0.20; 0 ≤ f ≤ 0.70; and (a + b + c + d + e + f) is 1.)
[Problem] The purpose of the present invention is to provide a surface modifier which contains a water-soluble polyether-modified organopolysiloxane, while maintaining the surface characteristics of a polyether-modified polyorganosiloxane. [Solution] The present invention provides a surface modifier which is composed of a polyether-modified organopolysiloxane that has an oxyethylene group and an oxypropylene group, the surface modifier being characterized in that: the polyether-modified organopolysiloxane has an oxyethylene group content of 35 mass% or less; and a 1 mass% aqueous solution of the polyether-modified organopolysiloxane has a Haze value of 5.0 or less at 25°C, and a cloud number of 10 or more. [Selected drawing] None
Provided is a thermally conductive composition that includes
(A) 100 parts by mass of an organopolysiloxane that is represented by formula (1) and is a liquid at 23° C.
Provided is a thermally conductive composition that includes
(A) 100 parts by mass of an organopolysiloxane that is represented by formula (1) and is a liquid at 23° C.
(R3SiO1/2)a(R2SiO2/2)b(RSiO3/2)c(SiO4/2)d(O1/2X)e (1)
Provided is a thermally conductive composition that includes
(A) 100 parts by mass of an organopolysiloxane that is represented by formula (1) and is a liquid at 23° C.
(R3SiO1/2)a(R2SiO2/2)b(RSiO3/2)c(SiO4/2)d(O1/2X)e (1)
(in the formula, R is a hydrogen atom, an alkyl group, an aryl group, an aralkyl group, or an alkenyl group, X is a hydrogen atom or an alkyl group, a, b, c, and d are numbers that satisfy 0≤a≤0.8, 0≤b≤0.8, 0.2≤c≤1, 0≤d≤0.8, and a+b+c+d=1, and e is a number that satisfies 0≤e≤0.1) and
(B) 2,000-7,000 parts by mass of a thermally conductive filler.
Provided is a thermally conductive composition that includes
(A) 100 parts by mass of an organopolysiloxane that is represented by formula (1) and is a liquid at 23° C.
(R3SiO1/2)a(R2SiO2/2)b(RSiO3/2)c(SiO4/2)d(O1/2X)e (1)
(in the formula, R is a hydrogen atom, an alkyl group, an aryl group, an aralkyl group, or an alkenyl group, X is a hydrogen atom or an alkyl group, a, b, c, and d are numbers that satisfy 0≤a≤0.8, 0≤b≤0.8, 0.2≤c≤1, 0≤d≤0.8, and a+b+c+d=1, and e is a number that satisfies 0≤e≤0.1) and
(B) 2,000-7,000 parts by mass of a thermally conductive filler.
The viscosity of the thermally conductive composition at 25° C. is no more than 1,000 Pa·s.
A resist composition comprising an acid generator containing a sulfonium or iodonium salt of an arylsulfonic acid substituted with at least two iodine atoms is provided. It exhibits a high sensitivity and forms a pattern with reduced LWR or improved CDU independent of whether it is of positive or negative type.
C08F 212/14 - Monomères contenant un seul radical aliphatique non saturé contenant un cycle substitué par des hétéro-atomes ou des groupes contenant des hétéro-atomes
C08F 220/18 - Esters des alcools ou des phénols monohydriques des phénols ou des alcools contenant plusieurs atomes de carbone avec l'acide acrylique ou l'acide méthacrylique
A resist composition comprising a base polymer possessing a sulfonium or iodonium salt structure having an iodized arylsulfonic acid anion attached to its backbone is provided. It exhibits a high sensitivity and forms a pattern with reduced LWR or improved CDU independent of whether it is of positive or negative type.
A positive resist composition is provided comprising a base polymer comprising repeat units (a) having a substituted or unsubstituted carboxy group and a substituted or unsubstituted phenolic hydroxy group, repeat units (b) having an acid labile group, and repeat units (c) consisting of a sulfonic acid anion bonded to the polymer backbone and a sulfonium or iodonium cation. It exhibits a high sensitivity and resolution and forms a pattern of satisfactory profile with reduced edge roughness or dimensional variation.
Provided are an insulating coating material for coating electric wire, which is capable of being cured at a relatively low temperature without using a high-boiling point solvent such as N-methyl-2-pyrrolidone (NMP), and provides a cured product that is excellent in balance between heat resistance, moisture resistance, insulation property, and flexibility; and an insulated wire or the like using the same. The insulating coating material for coating electric wire includes (A) a maleimide compound having a bisphenol structure and a number average molecular weight of 5,000 to 50,000, and (B) a reaction initiator. The insulated wire includes a cured film formed of the insulating coating material for coating electric wire.
H01B 3/30 - Isolateurs ou corps isolants caractérisés par le matériau isolantEmploi de matériaux spécifiés pour leurs propriétés isolantes ou diélectriques composés principalement de substances organiques matières plastiquesIsolateurs ou corps isolants caractérisés par le matériau isolantEmploi de matériaux spécifiés pour leurs propriétés isolantes ou diélectriques composés principalement de substances organiques résinesIsolateurs ou corps isolants caractérisés par le matériau isolantEmploi de matériaux spécifiés pour leurs propriétés isolantes ou diélectriques composés principalement de substances organiques cires
21.
FLUOROPOLYETHER-GROUP-CONTAINING POLYMER, SURFACE TREATMENT AGENT, AND ARTICLE
According to the present invention, a cured coating having exceptional water and oil repellency and abrasion resistance as well as exceptional chucking properties can be formed by using a fluoropolyether-group-containing polymer having a silanol group or a hydrolyzable silyl group represented by formula (1)
According to the present invention, a cured coating having exceptional water and oil repellency and abrasion resistance as well as exceptional chucking properties can be formed by using a fluoropolyether-group-containing polymer having a silanol group or a hydrolyzable silyl group represented by formula (1)
(Rf is a divalent fluoroxyalkylene-group-containing polymer residue, U is a divalent or trivalent organic group, Z is a silalkylene structure or a silarylene structure, Y is a divalent organic group, R is a C1-4 alkyl group or a phenyl group, X is a hydroxyl group or a hydrolyzable group, n is 1-3, and m is 1 or 2)
as a surface treatment agent including said polymer and/or a partial (hydrolyzed) condensate thereof.
This quantum dot body comprises a quantum dot that emits fluorescent light by the action of excitation light. The quantum dot body is characterized in that the quantum dot comprises a semiconductor nanoparticle core and a semiconductor nanoparticle shell that coats the semiconductor nanoparticle core, the surface of the quantum dot is coated with a metal oxide, and the surface of the metal oxide is modified with a phosphonic acid derivative. The quantum dot body is also characterized by having a polymer coating layer on the outermost surface thereof, wherein the polymer coating layer is formed by bonding a reactive substituent in the phosphonic acid derivative to a reactive substituent in a polymer. As a result, there are provided: a quantum dot body which is further improved in stability while maintaining the fluorescence emission characteristics of a quantum dot, and is also further improved in compatibility with a highly polar solvent or a photosensitive resin composition; a quantum dot composition in which the quantum dot body is dispersed in a resin material; a wavelength conversion material obtained by curing the quantum dot composition; and a method for producing the wavelength conversion material.
C09K 11/56 - Substances luminescentes, p. ex. électroluminescentes, chimiluminescentes contenant des substances inorganiques luminescentes contenant du soufre
C09K 11/70 - Substances luminescentes, p. ex. électroluminescentes, chimiluminescentes contenant des substances inorganiques luminescentes contenant du phosphore
C09K 11/88 - Substances luminescentes, p. ex. électroluminescentes, chimiluminescentes contenant des substances inorganiques luminescentes contenant du sélénium, du tellure ou des chalcogènes non spécifiés
Provided is a dispersion having excellent dispersibility, especially dispersibility in aqueous media, water resistance, and feel on use (absence of stickiness) that contains components (a)-(d): (a) 10-85 mass% of a hydrophobized inorganic powder having a number-average primary particle size by image analysis of a transmission electron micrograph of more than 200 nm and equal to or less than 700 nm, (b) 1-80 mass% of an aqueous component having two or more alcoholic hydroxyl groups, (c) 1-20 mass% of a polyglycerol-modified silicone that is soluble in component (b), and (d) 0-2 mass% of a polyglycerol-modified silicone that is insoluble in component (b), where the ratio of the content of component (d) to the content of component (c) represented by (d)/(c) is 0.1 or less.
A61K 8/894 - Polysiloxanes saturés, p. ex. diméthicone, phényl triméthicone, C24-C28 méthicone, stéaryl diméthicone modifiés par un groupe polyoxyalkylène, p. ex. cétyl diméthicone copolyol
A61Q 1/04 - Préparations contenant des colorants cutanés, p. ex. pigments pour les lèvres
[Problem] The purpose of the present invention is to provide a polyether-modified organopolysiloxane which has good water solubility without impairing the characteristics of siloxane, while having a polyether chain. [Solution] The present invention provides a polyether-modified organopolysiloxane which is represented by formula (1) and has a block copolymer structure comprising a polyblock structure of oxyethylene and a polyblock structure of oxypropylene. (In the formula, each R independently represents a group selected from among an alkyl group having 1 to 10 carbon atoms, an aryl group having 6 to 10 carbon atoms, and an aralkyl group having 7 to 10 carbon atoms; x represents an integer of 1 to 100; and each R1independently represents a group represented by formula (2).) (In the formula, R2 represents an alkyl group having 1 to 12 carbon atoms or an acetyl group; n represents an integer of 2 to 10; a represents an integer of 3 to 60; b represents an integer of 3 to 60; b/(a + b) is within the range of 0.3 to 0.8; and oxypropylene in parentheses with the subscript a and oxyethylene in parentheses with the subscript b respectively have polyblock structures in the sequence shown in formula (2).)
A crystalline oxide film containing gallium as a main component, in which when CuKα rays are made incident on the crystalline oxide film to perform X-ray diffraction, a reflection output in scanning ω and 2θ has a local maximum point when 16.20°<2θ<39.90° and 20.30°<ω<32.20° at an angle φ around a φ axis orthogonal to a surface of the crystalline oxide film at the angle φ where a peak attributable to the crystalline oxide film by ω-2θ measurement is maximum, and 40.10°<ω+θ<40.40° relative to ω and θ at which the reflection output reaches a maximum is satisfied. This provides the crystalline oxide film, a laminated structure, a semiconductor device with excellent semiconductor properties, particularly excellent withstand voltage, and a method for producing a crystalline oxide film.
A thermal conductive silicone composition including: (A) an organopolysiloxane having at least two alkenyl groups per molecule: 100 parts by mass; (B) an organohydrogen polysiloxane having at least two silicon atom-bonded hydrogen atoms per molecule: such that (the number of Si—H groups in component (B))/(the number of alkenyl groups in component (A)) is 0.5 to 3.0; (C) a filler containing one or more thermal conductive powders: 800 to 20,000 parts by mass; (D) a hydrolyzable organopolysiloxane of formula (1): 20 to 400 parts by mass; (E) an organosilane of formula (2), R2bSi(OR3)4-b: 0.01 to 100 parts by mass; (F) platinum or a platinum compound: 0.1 to 500 ppm as platinum atoms relative to component (A); and (G) a reaction regulator: 0.01 to 1 parts by mass.
A thermal conductive silicone composition including: (A) an organopolysiloxane having at least two alkenyl groups per molecule: 100 parts by mass; (B) an organohydrogen polysiloxane having at least two silicon atom-bonded hydrogen atoms per molecule: such that (the number of Si—H groups in component (B))/(the number of alkenyl groups in component (A)) is 0.5 to 3.0; (C) a filler containing one or more thermal conductive powders: 800 to 20,000 parts by mass; (D) a hydrolyzable organopolysiloxane of formula (1): 20 to 400 parts by mass; (E) an organosilane of formula (2), R2bSi(OR3)4-b: 0.01 to 100 parts by mass; (F) platinum or a platinum compound: 0.1 to 500 ppm as platinum atoms relative to component (A); and (G) a reaction regulator: 0.01 to 1 parts by mass.
A film forming apparatus including an atomizing means for atomizing a raw material solution to form a raw material mist, a carrier gas supply means to transport the raw material mist, a mist supply means to supply a gas mixture, in which the raw material mist and the carrier gas are mixed, to a surface of a substrate, a stage on which the substrate is placed, a measurement means for directly or indirectly measuring a supply amount of the raw material mist to output a signal in accordance with a measured value obtained by the measurement, and a control means for receiving the signal to adjust the supply amount of the raw material mist based on the signal.
C23C 16/448 - Revêtement chimique par décomposition de composés gazeux, ne laissant pas de produits de réaction du matériau de la surface dans le revêtement, c.-à-d. procédés de dépôt chimique en phase vapeur [CVD] caractérisé par le procédé de revêtement caractérisé par le procédé utilisé pour produire des courants de gaz réactifs, p. ex. par évaporation ou par sublimation de matériaux précurseurs
C23C 16/458 - Revêtement chimique par décomposition de composés gazeux, ne laissant pas de produits de réaction du matériau de la surface dans le revêtement, c.-à-d. procédés de dépôt chimique en phase vapeur [CVD] caractérisé par le procédé de revêtement caractérisé par le procédé utilisé pour supporter les substrats dans la chambre de réaction
C23C 16/52 - Commande ou régulation du processus de dépôt
28.
COMPOSITION FOR FORMING ORGANIC FILM, METHOD FOR FORMING ORGANIC FILM, PATTERNING PROCESS, AND POLYMER
The present invention is a composition for forming an organic film, containing: (A) a material for forming an organic film; (B) a polymer having a repeating unit represented by the following general formula (1); and (C) a solvent, where W1 represents a saturated or unsaturated divalent organic group having 2 to 50 carbon atoms and having one or more fluorine-containing structures represented by the following formulae (2), and W2 represents a saturated or unsaturated divalent organic group having 2 to 50 carbon atoms. This can provide: a composition for forming an organic film which is excellent in film-formability on a substrate and filling property, suppresses humps in an EBR process, and has an excellent process margin when used for an organic film for a multilayer resist process; a method for forming an organic film, using the composition; a patterning process; and a polymer to be contained in the composition for forming an organic film.
The present invention is a composition for forming an organic film, containing: (A) a material for forming an organic film; (B) a polymer having a repeating unit represented by the following general formula (1); and (C) a solvent, where W1 represents a saturated or unsaturated divalent organic group having 2 to 50 carbon atoms and having one or more fluorine-containing structures represented by the following formulae (2), and W2 represents a saturated or unsaturated divalent organic group having 2 to 50 carbon atoms. This can provide: a composition for forming an organic film which is excellent in film-formability on a substrate and filling property, suppresses humps in an EBR process, and has an excellent process margin when used for an organic film for a multilayer resist process; a method for forming an organic film, using the composition; a patterning process; and a polymer to be contained in the composition for forming an organic film.
G03F 7/09 - Matériaux photosensibles caractérisés par des détails de structure, p. ex. supports, couches auxiliaires
G03F 7/11 - Matériaux photosensibles caractérisés par des détails de structure, p. ex. supports, couches auxiliaires avec des couches de recouvrement ou des couches intermédiaires, p. ex. couches d'ancrage
H01L 21/027 - Fabrication de masques sur des corps semi-conducteurs pour traitement photolithographique ultérieur, non prévue dans le groupe ou
H01L 21/033 - Fabrication de masques sur des corps semi-conducteurs pour traitement photolithographique ultérieur, non prévue dans le groupe ou comportant des couches inorganiques
H01L 21/308 - Traitement chimique ou électrique, p. ex. gravure électrolytique en utilisant des masques
H01L 21/3213 - Gravure physique ou chimique des couches, p. ex. pour produire une couche avec une configuration donnée à partir d'une couche étendue déposée au préalable
29.
NEGATIVE ELECTRODE ACTIVE MATERIAL FOR NONAQUEOUS ELECTROLYTE SECONDARY BATTERY, AND METHOD FOR PRODUCING SAME
xx: 0.5 ≤ x ≤ 1.6); the silicon compound particles include a lithium compound; surfaces of the negative electrode active material particles are at least partially covered with a carbon material; the carbon material has a peak originating from the G band between 1530 cm−1and 1590 cm−1; the quantity of the covering carbon material is greater than 0.5% by mass and no greater than 10% by mass; and the carbon material is partly or wholly diamond-like carbon. Due to this cofiguration, a water-based negative electrode slurry produced when a negative electrode of a secondary battery is produced can be stabilized and a negative electrode active material for a nonaqueous electrolyte secondary battery is provided that can improve initial charge and discharge characteristics when used as a negative electrode active material of the secondary battery.
H01M 4/48 - Emploi de substances spécifiées comme matériaux actifs, masses actives, liquides actifs d'oxydes ou d'hydroxydes inorganiques
H01M 4/36 - Emploi de substances spécifiées comme matériaux actifs, masses actives, liquides actifs
H01M 4/58 - Emploi de substances spécifiées comme matériaux actifs, masses actives, liquides actifs de composés inorganiques autres que les oxydes ou les hydroxydes, p. ex. sulfures, séléniures, tellurures, halogénures ou LiCoFyEmploi de substances spécifiées comme matériaux actifs, masses actives, liquides actifs de structures polyanioniques, p. ex. phosphates, silicates ou borates
30.
Composition For Forming Resist Underlayer Film, Resist Underlayer Film, Method For Manufacturing Resist Underlayer Film, Patterning Process, And Method For Manufacturing Semiconductor Device
The present invention is a composition for forming a resist underlayer film, containing: (A) a polyether compound containing a repeating unit represented by the following general formula (I); and (B) an organic solvent, where Ar1 represents a substituted or unsubstituted aryl group having 6 to 30 carbon atoms or the like, R1 represents a substituted or unsubstituted, linear, branched, or cyclic, saturated or unsaturated divalent hydrocarbon group having 1 to 20 carbon atoms or a substituted or unsubstituted, linear, branched, or cyclic heteroalkylene group having 1 to 20 carbon atoms, and “n” and “m” each represent an integer of 0 or more. This can provide a composition for forming a resist underlayer film with which it is possible to form a resist underlayer film that exhibits excellent processing resistance and excellent gas permeability.
The present invention is a composition for forming a resist underlayer film, containing: (A) a polyether compound containing a repeating unit represented by the following general formula (I); and (B) an organic solvent, where Ar1 represents a substituted or unsubstituted aryl group having 6 to 30 carbon atoms or the like, R1 represents a substituted or unsubstituted, linear, branched, or cyclic, saturated or unsaturated divalent hydrocarbon group having 1 to 20 carbon atoms or a substituted or unsubstituted, linear, branched, or cyclic heteroalkylene group having 1 to 20 carbon atoms, and “n” and “m” each represent an integer of 0 or more. This can provide a composition for forming a resist underlayer film with which it is possible to form a resist underlayer film that exhibits excellent processing resistance and excellent gas permeability.
C08G 65/40 - Composés macromoléculaires obtenus par des réactions créant une liaison éther dans la chaîne principale de la macromolécule à partir de composés hydroxylés ou de leurs dérivés métalliques dérivés des phénols à partir des phénols et d'autres composés
G03F 7/09 - Matériaux photosensibles caractérisés par des détails de structure, p. ex. supports, couches auxiliaires
G03F 7/11 - Matériaux photosensibles caractérisés par des détails de structure, p. ex. supports, couches auxiliaires avec des couches de recouvrement ou des couches intermédiaires, p. ex. couches d'ancrage
G03F 7/16 - Procédés de couchageAppareillages à cet effet
H01L 21/027 - Fabrication de masques sur des corps semi-conducteurs pour traitement photolithographique ultérieur, non prévue dans le groupe ou
H01L 21/033 - Fabrication de masques sur des corps semi-conducteurs pour traitement photolithographique ultérieur, non prévue dans le groupe ou comportant des couches inorganiques
H01L 21/3065 - Gravure par plasmaGravure au moyen d'ions réactifs
H01L 21/308 - Traitement chimique ou électrique, p. ex. gravure électrolytique en utilisant des masques
Provided is a perfluoropolyether-organopolysiloxane block copolymer that has a perfluoropolyether group, that allows control of, for example, the number of siloxane units in the molecule, and that has excellent affinity with non-fluorinated organic compounds. A perfluoropolyether-organopolysiloxane block copolymer of the present invention is a perfluoropolyether-organopolysiloxane block copolymer having a perfluoropolyether block and an organopolysiloxane block. The organopolysiloxane block has, as a side chain thereof, one or more groups selected from an aralkyl group and a group having an oxyalkylene unit.
C08G 77/46 - Polymères séquencés ou greffés contenant des segments de polysiloxanes contenant des segments de polyéthers
C08G 77/00 - Composés macromoléculaires obtenus par des réactions créant dans la chaîne principale de la macromolécule une liaison contenant du silicium, avec ou sans soufre, azote, oxygène ou carbone
C08G 77/385 - Polysiloxanes modifiés par post-traitement chimique contenant des atomes autres que le carbone, l'hydrogène, l'oxygène ou le silicium contenant des halogènes
The present invention provides an organopolysiloxane which is characterized by having one or more photodegradable groups among those represented by general formulae (1) and (2). As a result, the present invention provides an organopolysiloxane which has a photodegradable group and generates an ethylenically unsaturated group when irradiated with light. (In the formulae, R1represents a substituted or unsubstituted alkyl group, a cycloalkyl group, an aralkyl group or an aryl group, and R2 independently represents a hydrogen atom, a substituted or unsubstituted alkyl group, or a substituted or unsubstituted aryl group. The line to which a wiggly line is attached indicates an atomic bond.)
An onium salt consisting of an aromatic ring-bearing sulfonic acid anion and a cation, the anion having an acid labile group-protected hydroxy group and a fluorinated substituent group on the aromatic ring, is provided. A resist film of a chemically amplified resist composition comprising the onium salt has advantages including reduced LWR, high resolution, and collapse resistance when processed by the DUV, EUV or EB lithography.
C07C 211/63 - Composés d'ammonium quaternaire ayant des atomes d'azote quaternisés liés à des atomes de carbone acycliques
C07C 309/12 - Acides sulfoniques ayant des groupes sulfo liés à des atomes de carbone acycliques d'un squelette carboné acyclique saturé contenant des atomes d'oxygène liés au squelette carboné contenant des groupes hydroxy estérifiés liés au squelette carboné
C07C 309/24 - Acides sulfoniques ayant des groupes sulfo liés à des atomes de carbone acycliques d'un squelette carboné contenant des cycles aromatiques à six chaînons
C07C 321/28 - Sulfures, hydropolysulfures ou polysulfures ayant des groupes thio liés à des atomes de carbone de cycles aromatiques à six chaînons
C07D 307/12 - Radicaux substitués par des atomes d'oxygène
C07D 327/08 - Cycles à six chaînons condensés en [b, e] avec deux carbocycles à six chaînons
C07D 333/54 - Benzo [b] thiophènesBenzo [b] thiophènes hydrogénés avec uniquement des atomes d'hydrogène, des radicaux hydrocarbonés ou des radicaux hydrocarbonés substitués, liés directement aux atomes de carbone de l'hétérocycle
C07D 493/22 - Composés hétérocycliques contenant des atomes d'oxygène comme uniques hétéro-atomes dans le système condensé dans lesquels le système condensé contient au moins quatre hétérocycles
The present invention is a composition for forming a resist underlayer film, containing: (A) a novolak resin having a repeating unit structure represented by the following general formula (I) and/or (II); and (B) an organic solvent, where R1 is a combination of at least two kinds within a single resin and represents a hydrogen atom, a substituted or unsubstituted, linear, branched, or cyclic alkyl group having 1 to 20 carbon atoms, a substituted or unsubstituted, linear, branched, or cyclic alkenyl group having 2 to 20 carbon atoms, or a substituted or unsubstituted, linear, branched, or cyclic alkynyl group having 2 to 20 carbon atoms, and “n1” represents an integer of 1 or more. This can provide a composition for forming a resist underlayer film with which it is possible to form a resist underlayer film that exhibits excellent processing resistance and excellent gas permeability.
The present invention is a composition for forming a resist underlayer film, containing: (A) a novolak resin having a repeating unit structure represented by the following general formula (I) and/or (II); and (B) an organic solvent, where R1 is a combination of at least two kinds within a single resin and represents a hydrogen atom, a substituted or unsubstituted, linear, branched, or cyclic alkyl group having 1 to 20 carbon atoms, a substituted or unsubstituted, linear, branched, or cyclic alkenyl group having 2 to 20 carbon atoms, or a substituted or unsubstituted, linear, branched, or cyclic alkynyl group having 2 to 20 carbon atoms, and “n1” represents an integer of 1 or more. This can provide a composition for forming a resist underlayer film with which it is possible to form a resist underlayer film that exhibits excellent processing resistance and excellent gas permeability.
G03F 7/039 - Composés macromoléculaires photodégradables, p. ex. réserves positives sensibles aux électrons
C08G 8/04 - Polymères de condensation obtenus uniquement à partir d'aldéhydes ou de cétones avec des phénols d'aldéhydes
C08G 8/08 - Polymères de condensation obtenus uniquement à partir d'aldéhydes ou de cétones avec des phénols d'aldéhydes de formaldéhyde, p. ex. de formaldéhyde formé in situ
C08G 8/20 - Polymères de condensation obtenus uniquement à partir d'aldéhydes ou de cétones avec des phénols d'aldéhydes de formaldéhyde, p. ex. de formaldéhyde formé in situ avec des phénols polyhydriques
G03F 7/00 - Production par voie photomécanique, p. ex. photolithographique, de surfaces texturées, p. ex. surfaces impriméesMatériaux à cet effet, p. ex. comportant des photoréservesAppareillages spécialement adaptés à cet effet
G03F 7/16 - Procédés de couchageAppareillages à cet effet
H01L 21/027 - Fabrication de masques sur des corps semi-conducteurs pour traitement photolithographique ultérieur, non prévue dans le groupe ou
A hydrophilic composition containing (A) 100 mass parts of a hydrophilic copolymer containing structural units represented by formula (1) and structural units represented by formula (2) and (B) 0.001-10 mass parts of a blocked isocyanate silane compound yields a coating film having exceptional hydrophilicity, anti-fogging properties, and water resistance. [In formula (1), R1represents a hydrogen atom or a methyl group, R2each independently represent a C1-6 alkyl group, and n represents an integer of 1-6. In formula (2), R3represents a hydrogen atom or a methyl group, X1represents -NH- or -O-, Z1represents a hydrogen atom, a methyl group, a hydroxyl group, a carboxy group, or an amino group, and m represents an integer of 0-10 (however, when m is 0, Z1 is a hydrogen atom or a methyl group.) An asterisk * represents bonding to an adjacent structural unit.]
Disclosed is a curable organopolysiloxane composition which contains the components (A), (B), (C) and (D) described below, does not separate or precipitate an addition reaction control agent even when stored at low temperatures, has excellent low-temperature storage stability, and has excellent pot life at high temperatures. (A) an organopolysiloxane which has an alkenyl group bonded to a silicon atom (B) an organohydrogenpolysiloxane (C) an addition reaction control agent which contains the components (C-1) and (C-2) described below, and is in an amount of 0.06-0.60 part by mass relative to a total of 100 parts by mass of the components (A) and (B), wherein the mass ratio (C-2)/(C-1) of the component (C-2) to the component (C-1) is 0.10-5.00, the component (C-1) is an acetylene alcohol having a boiling point of 150-189°C, and the component (C-2) is a compound having a refractive index of 1.420-1.450 at 25°C and a boiling point of 190°C or higher (D) a platinum group metal-based catalyst
The present invention is a negative electrode active material comprising negative electrode active material particles. The negative electrode active material is characterized in that: the negative electrode active material particles include porous carbon structures; silicon and a silicon oxide are dispersed in the interiors of the porous carbon structures; a low-valent nanosilicon oxide in an amorphous state is dispersed in at least surface-layer portions of the interiors of the porous carbon structures; the low-valent nanosilicon oxide is SiOx, where x is less than 1.0; and nanosilicon with a crystalline structure is dispersed at least in deep layer portions of the interiors of the porous carbon structures, such portions being deeper than where the low-valent nanosilicon oxide is dispersed. Due to this configuration, it is possible to provide a negative electrode active material that can increase capacity while maintaining battery characteristics.
H01M 4/38 - Emploi de substances spécifiées comme matériaux actifs, masses actives, liquides actifs d'éléments simples ou d'alliages
C01B 33/03 - Préparation par décomposition ou réduction de composés de silicium gazeux ou vaporisés autres que la silice ou un matériau contenant de la silice par décomposition d'halogénures de silicium ou de silanes halogénés ou réduction de ceux-ci avec de l'hydrogène comme seul agent réducteur
xxx appearing at 2θ=10-30° obtained by X-ray diffraction using Cu-Kα rays and C2 is defined as the peak intensity of the Si (111) surface appearing at 2θ=28°±1°, C2/C1 calculated by a specific method satisfies >C2/C1≥0.01. Thus, it is possible to provide a negative electrode active material that makes it possible to improve cycle characteristics when used as a negative electrode active material for a secondary battery.
A nitrogen-containing silane compound having the general formula (1):
A nitrogen-containing silane compound having the general formula (1):
wherein R1 represents a hydrogen atom or an unsubstituted monovalent hydrocarbon group,
R2 and R3 each independently represent an unsubstituted monovalent hydrocarbon group or a group having general formula (2),
A nitrogen-containing silane compound having the general formula (1):
wherein R1 represents a hydrogen atom or an unsubstituted monovalent hydrocarbon group,
R2 and R3 each independently represent an unsubstituted monovalent hydrocarbon group or a group having general formula (2),
—OR5 (2)
wherein R5 represents an unsubstituted monovalent hydrocarbon group,
R4 represents an unsubstituted divalent hydrocarbon group,
A represents a group having general formula (3) or general formula (4):
A nitrogen-containing silane compound having the general formula (1):
wherein R1 represents a hydrogen atom or an unsubstituted monovalent hydrocarbon group,
R2 and R3 each independently represent an unsubstituted monovalent hydrocarbon group or a group having general formula (2),
—OR5 (2)
wherein R5 represents an unsubstituted monovalent hydrocarbon group,
R4 represents an unsubstituted divalent hydrocarbon group,
A represents a group having general formula (3) or general formula (4):
wherein R6 and R7 represent a monovalent hydrocarbon group in which a hetero atom may be interposed or a triorganosilyl group, and may be bonded to each other to form a ring together with a nitrogen atom to which they are bonded,
A nitrogen-containing silane compound having the general formula (1):
wherein R1 represents a hydrogen atom or an unsubstituted monovalent hydrocarbon group,
R2 and R3 each independently represent an unsubstituted monovalent hydrocarbon group or a group having general formula (2),
—OR5 (2)
wherein R5 represents an unsubstituted monovalent hydrocarbon group,
R4 represents an unsubstituted divalent hydrocarbon group,
A represents a group having general formula (3) or general formula (4):
wherein R6 and R7 represent a monovalent hydrocarbon group in which a hetero atom may be interposed or a triorganosilyl group, and may be bonded to each other to form a ring together with a nitrogen atom to which they are bonded,
wherein R8 represents an unsubstituted monovalent hydrocarbon group or a triorganosilyl group, R9 and R10 represent a divalent hydrocarbon group, and R11 represents C—H or a nitrogen atom.
The present invention is a resist material containing: a base polymer (P) containing a repeating unit (A) containing a reactive group and represented by the following formula (a1) or (a2), and a repeating unit (B) having an acid-decomposable group; a crosslinking agent having a structure represented by the following formula (1); a thermal acid generator; a photodecomposable quencher represented by the following formula (2); and an organic solvent. This can provide: a resist material having little edge roughness, little size variation, excellent resolution, and excellent heat resistance; and a patterning process.
The present invention is a resist material containing: a base polymer (P) containing a repeating unit (A) containing a reactive group and represented by the following formula (a1) or (a2), and a repeating unit (B) having an acid-decomposable group; a crosslinking agent having a structure represented by the following formula (1); a thermal acid generator; a photodecomposable quencher represented by the following formula (2); and an organic solvent. This can provide: a resist material having little edge roughness, little size variation, excellent resolution, and excellent heat resistance; and a patterning process.
The onium salt type monomer for a chemically amplified resist composition has excellent solvent solubility and a high sensitivity and contrast, and is excellent in lithographic performance such as exposure tolerance (EL), LWR, CDU and depth of focus (DOF), and excellent in resistance to pattern collapse and etch resistance even in fine pattern formation. The onium salt type monomer has the following formula (a).
The onium salt type monomer for a chemically amplified resist composition has excellent solvent solubility and a high sensitivity and contrast, and is excellent in lithographic performance such as exposure tolerance (EL), LWR, CDU and depth of focus (DOF), and excellent in resistance to pattern collapse and etch resistance even in fine pattern formation. The onium salt type monomer has the following formula (a).
G03F 7/039 - Composés macromoléculaires photodégradables, p. ex. réserves positives sensibles aux électrons
C07C 309/12 - Acides sulfoniques ayant des groupes sulfo liés à des atomes de carbone acycliques d'un squelette carboné acyclique saturé contenant des atomes d'oxygène liés au squelette carboné contenant des groupes hydroxy estérifiés liés au squelette carboné
C07C 309/75 - Esters d'acides sulfoniques ayant des atomes de soufre de groupes sulfo estérifiés liés à des atomes de carbone de cycles aromatiques à six chaînons d'un squelette carboné contenant des atomes d'oxygène, liés par des liaisons simples, liés au squelette carboné
C07C 323/09 - Thiols, sulfures, hydropolysulfures ou polysulfures substitués par des halogènes, des atomes d'oxygène ou d'azote ou par des atomes de soufre ne faisant pas partie de groupes thio contenant des groupes thio et des atomes d'halogène ou des groupes nitro ou nitroso liés au même squelette carboné ayant des atomes de soufre de groupes thio liés à des atomes de carbone de cycles aromatiques à six chaînons du squelette carboné
C07D 327/08 - Cycles à six chaînons condensés en [b, e] avec deux carbocycles à six chaînons
C08F 212/14 - Monomères contenant un seul radical aliphatique non saturé contenant un cycle substitué par des hétéro-atomes ou des groupes contenant des hétéro-atomes
C08F 220/18 - Esters des alcools ou des phénols monohydriques des phénols ou des alcools contenant plusieurs atomes de carbone avec l'acide acrylique ou l'acide méthacrylique
G03F 7/00 - Production par voie photomécanique, p. ex. photolithographique, de surfaces texturées, p. ex. surfaces impriméesMatériaux à cet effet, p. ex. comportant des photoréservesAppareillages spécialement adaptés à cet effet
The present invention is a photocurable silicone composition characterized by comprising: (A) an organopolysiloxane represented by general formula (1). (In the formula, n is an integer of 10 or more; R1is independently a methyl group or a phenyl group; and R2is a group represented by general formula (2).) (In the formula, m is an integer of 0-20; R3is independently a methyl group or a phenyl group; Z1is a substituted or unsubstituted divalent organic group having 1-10 carbon atoms; Z2is an oxygen atom or a substituted or unsubstituted divalent organic group having 1-10 carbon atoms; and a wavy line represents a bond.); (B) an organic compound having a (meth)acrylic group and an epoxy group in one molecule and having no alkoxysilyl group; (C) a photoradical polymerization initiator; and (D) a silica powder having a BET specific surface area of 100 m2/g or more. The photocurable silicone composition is also characterized in that, in the component (A), the ratio of the methyl groups bonded to silicon atoms to the phenyl groups bonded to the silicon atoms is 97:3 to 80:20. Due to this configuration, provided is the photocurable silicone composition with which is obtained a cured product having excellent surface curability and deep portion curability, and having a small compression set.
Provided are a hydrophilic copolymer and a hydrophilic composition including the same, said hydrophilic copolymer including a structural unit (a) that is represented by formula (1) and a structural unit (b) that is represented by formula (2). [In formula (1), R1is a hydrogen atom or a methyl group, R2is –N(R422 (where R424mm–R536mm–R5(where m is an integer from 1 to 50 and R5represents a hydrogen atom or a C1-6 alkyl group), and X1is a divalent linking group, and in formula (2), R3is a hydrogen atom or a methyl group, X2is a divalent linking group, and Y1 represents a group that has a polymerizable unsaturated bond.]
C08F 299/00 - Composés macromoléculaires obtenus par des interréactions de polymères impliquant uniquement des réactions entre des liaisons non saturées carbone-carbone, en l'absence de monomères non macromoléculaires
44.
NEGATIVE ELECTRODE ACTIVE MATERIAL AND METHOD FOR PRODUCING SAME
The present invention provides a negative electrode active material which has negative electrode active material particles, the negative electrode active material being characterized in that: the negative electrode active material particles each include a porous carbon structure; amorphous low valence nano silicon oxide is dispersed inside the porous carbon structure; the low valence nano silicon oxide includes the states where SiOx:x < 1.0 is satisfied; and the low valence nano silicon oxide has an average particle diameter of 50 nm or less as determined by image processing of a cross-sectional TEM image thereof. As a result, a negative electrode active material which is capable of increasing the capacity while maintaining the battery characteristics is provided.
H01M 4/48 - Emploi de substances spécifiées comme matériaux actifs, masses actives, liquides actifs d'oxydes ou d'hydroxydes inorganiques
C01B 33/03 - Préparation par décomposition ou réduction de composés de silicium gazeux ou vaporisés autres que la silice ou un matériau contenant de la silice par décomposition d'halogénures de silicium ou de silanes halogénés ou réduction de ceux-ci avec de l'hydrogène comme seul agent réducteur
The present invention addresses the problem of providing: an elastic fiber treatment agent capable of reducing friction between fibers and metal and improving stability; and elastic fibers to which the elastic fiber treatment agent is adhered. An elastic fiber treatment agent according to the present invention is characterized by containing a smoothing agent (A) and a urea-modified silicone (B). Elastic fibers according to the present invention are characterized by having adhered thereto an elastic fiber treatment agent containing a smoothing agent (A) and a urea-modified silicone (B).
D06M 15/653 - Composés macromoléculaires obtenus par des réactions autres que celles faisant intervenir uniquement des liaisons non saturées carbone-carbone contenant du silicium dans la chaîne principale modifiés par des composés isocyanates
D01F 11/08 - Post-traitement chimique de filaments, ou similaires, faits par l’homme, pendant leur fabrication de polymères synthétiques de composés macromoléculaires obtenus par des réactions faisant intervenir uniquement des liaisons non saturées carbone-carbone
D06M 13/02 - Traitement des fibres, fils, filés, tissus ou articles fibreux faits de ces matières, avec des composés organiques non macromoléculairesUn tel traitement combiné avec un traitement mécanique avec des hydrocarbures
D06M 15/643 - Composés macromoléculaires obtenus par des réactions autres que celles faisant intervenir uniquement des liaisons non saturées carbone-carbone contenant du silicium dans la chaîne principale
The present invention provides an optical isolator with multiple stages that includes: an optical element including at least a first polarizer, a first Faraday rotator, a second polarizer, a third polarizer, a second Faraday rotator, and a fourth polarizer in sequence in a direction in which light travels; and at least one permanent magnet configured to apply a magnetic field to the first Faraday rotator and the second Faraday rotator. A relative angle between a transmitted light polarization axis of the second polarizer and a transmitted light polarization axis of the third polarizer is equal to or more than 0.1 degrees. The optical isolator having high light-blocking performance is thus provided.
A resist composition comprising a bisonium salt containing a divalent anion having an arylsulfonate anion structure linked to an aromatic group having an iodine atom or a bromine atom and a sulfonimide anion structure or a sulfonamide anion structure bonded to the aromatic group having an iodine atom or a bromine atom, via a linking group having 1 or more carbon atoms, and an onium cation.
G03F 7/027 - Composés photopolymérisables non macromoléculaires contenant des doubles liaisons carbone-carbone, p. ex. composés éthyléniques
C08F 212/14 - Monomères contenant un seul radical aliphatique non saturé contenant un cycle substitué par des hétéro-atomes ou des groupes contenant des hétéro-atomes
C08F 220/18 - Esters des alcools ou des phénols monohydriques des phénols ou des alcools contenant plusieurs atomes de carbone avec l'acide acrylique ou l'acide méthacrylique
An onium salt monomer containing an aromatic sulfonic acid anion having a vinyl-substituted aromatic ring is provided as well as a polymer comprising repeat units derived from the monomer. A chemically amplified resist composition comprising the polymer has advantages including high sensitivity, high contrast, improved lithography properties, e.g., EL, LWR, CDU and DOF, collapse resistance during fine pattern formation, and etch resistance after development.
C07C 309/43 - Acides sulfoniques ayant des groupes sulfo liés à des atomes de carbone de cycles aromatiques à six chaînons d'un squelette carboné contenant des atomes d'oxygène, liés par des liaisons simples, liés au squelette carboné ayant au moins un des groupes sulfo lié à un atome de carbone d'un cycle aromatique à six chaînons faisant partie d'un système cyclique condensé
C07C 309/58 - Groupes acide carboxylique ou leurs esters
C07C 309/73 - Esters d'acides sulfoniques ayant des atomes de soufre de groupes sulfo estérifiés liés à des atomes de carbone de cycles aromatiques à six chaînons d'un squelette carboné à des atomes de carbone de cycles aromatiques à six chaînons non condensés
C07C 311/21 - Sulfonamides ayant des atomes de soufre de groupes sulfonamide liés à des atomes de carbone de cycles aromatiques à six chaînons ayant l'atome d'azote d'au moins un des groupes sulfonamide lié à un atome de carbone d'un cycle aromatique à six chaînons
C07C 323/09 - Thiols, sulfures, hydropolysulfures ou polysulfures substitués par des halogènes, des atomes d'oxygène ou d'azote ou par des atomes de soufre ne faisant pas partie de groupes thio contenant des groupes thio et des atomes d'halogène ou des groupes nitro ou nitroso liés au même squelette carboné ayant des atomes de soufre de groupes thio liés à des atomes de carbone de cycles aromatiques à six chaînons du squelette carboné
C07D 327/08 - Cycles à six chaînons condensés en [b, e] avec deux carbocycles à six chaînons
A resist composition comprising a bisonium salt containing a divalent anion having a sulfonate anion structure having a fluorine atom or a trifluoromethyl group at the position a or β and linked to an aromatic group having an iodine atom or a bromine atom and a carboxylate anion structure bonded to the aromatic group having an iodine atom or a bromine atom, via a linking group having 1 or more carbon atoms, and an onium cation.
A thermally conductive silicone composition comprising
(A) a crosslinked silicone gel,
(B) a silicone oil containing neither an aliphatic unsaturated bond nor an SiH group,
(C) a thermally conductive filler having an average particle diameter of 0.01-100 μm, the amount of which is 10-2,000 parts by mass per 100 parts by mass of the sum of the (A) and (B) components, and
(D) gallium or a gallium alloy having a melting point of −20 to 100° C., the amount of which is 1,000-10,000 parts by mass per 100 parts by mass of the sum of the (A) and (B) components.
A thermally conductive silicone composition comprising
(A) a crosslinked silicone gel,
(B) a silicone oil containing neither an aliphatic unsaturated bond nor an SiH group,
(C) a thermally conductive filler having an average particle diameter of 0.01-100 μm, the amount of which is 10-2,000 parts by mass per 100 parts by mass of the sum of the (A) and (B) components, and
(D) gallium or a gallium alloy having a melting point of −20 to 100° C., the amount of which is 1,000-10,000 parts by mass per 100 parts by mass of the sum of the (A) and (B) components.
The thermally conductive silicone composition has a high thermal conductivity and is excellent in terms of applicability and dislocation resistance.
C09D 7/61 - Adjuvants non macromoléculaires inorganiques
C09K 5/06 - Substances qui subissent un changement d'état physique lors de leur utilisation le changement d'état se faisant par passage de l'état liquide à l'état solide, ou vice versa
C09K 5/14 - Substances solides, p. ex. pulvérulentes ou granuleuses
53.
Composition For Forming Metal-Containing Film And Patterning Process
The present invention is a composition for forming a metal-containing film, containing: (A) a metal compound containing at least one kind of metal selected from the group consisting of Ti, Zr, and Hf; (B) a crosslinking agent containing, per molecule, 2 or more and 4 or fewer cyclic ether structures having 2 to 13 carbon atoms; and (C) a solvent. This can provide: a composition for forming a metal-containing film having better dry etching resistance than conventional organic underlayer film materials and also having high filling and planarizing properties; and a patterning process in which the composition is used.
G03F 7/09 - Matériaux photosensibles caractérisés par des détails de structure, p. ex. supports, couches auxiliaires
G03F 7/11 - Matériaux photosensibles caractérisés par des détails de structure, p. ex. supports, couches auxiliaires avec des couches de recouvrement ou des couches intermédiaires, p. ex. couches d'ancrage
G03F 7/16 - Procédés de couchageAppareillages à cet effet
The fluorene skeleton-containing polymer can form a film more excellent in heat resistance than that obtained from a conventional fluorene skeleton-containing polymer containing a siloxane structure. The polymer has a silphenylene skeleton, a polysiloxane skeleton, and a fluorene skeleton in a main chain, and contains a polyhydric alcohol structure in a side chain.
C08G 77/52 - Composés macromoléculaires obtenus par des réactions créant dans la chaîne principale de la macromolécule une liaison contenant du silicium, avec ou sans soufre, azote, oxygène ou carbone dans lesquels au moins deux atomes de silicium, mais pas la totalité, sont liés autrement que par des atomes d'oxygène par des liaisons au carbone contenant des cycles aromatiques
A hydrophilic copolymer comprising a constituent unit (a) represented by formula (1) and a constituent unit (b) represented by formula (2) is used to impart a coating film excelling in hydrophilicity, antifogging, and water resistance.
A hydrophilic copolymer comprising a constituent unit (a) represented by formula (1) and a constituent unit (b) represented by formula (2) is used to impart a coating film excelling in hydrophilicity, antifogging, and water resistance.
A hydrophilic copolymer comprising a constituent unit (a) represented by formula (1) and a constituent unit (b) represented by formula (2) is used to impart a coating film excelling in hydrophilicity, antifogging, and water resistance.
(In formula (1), R1 represents a hydrogen atom or methyl group, each R2 independently represents a hydrogen atom or C1-6 alkyl group, and X1 represents a divalent linking group. In formula (2), R3 represents a hydrogen atom or methyl group, R4 and R5 each independently represent a C1-10 alkyl group or C6-10 aryl group, X2 represents a bivalent linking group, n represents an integer from 1 to 3, and the asterisk (*) represents a bond to an adjacent constituent unit.)
C08F 230/08 - Copolymères de composés contenant un ou plusieurs radicaux aliphatiques non saturés, chaque radical ne contenant qu'une seule liaison double carbone-carbone et contenant du phosphore, du sélénium, du tellure ou un métal contenant un métal contenant du silicium
C09D 139/00 - Compositions de revêtement à base d'homopolymères ou de copolymères de composés possédant un ou plusieurs radicaux aliphatiques non saturés, chacun ne contenant qu'une seule liaison double carbone-carbone et l'un au moins étant terminé par une liaison simple ou double à un azote ou par un hétérocycle contenant de l'azoteCompositions de revêtement à base de dérivés de tels polymères
A resist composition comprising a bisonium salt containing a divalent anion having a sulfonate anion structure having a fluorine atom or a trifluoromethyl group at α- or β-position and linked to an aromatic group having an iodine atom or a bromine atom and a sulfonimide anion structure or a sulfonamide anion structure bonded to the aromatic group having an iodine atom or a bromine atom, via a linking group having 1 or more carbon atoms, and an onium cation.
C08F 220/18 - Esters des alcools ou des phénols monohydriques des phénols ou des alcools contenant plusieurs atomes de carbone avec l'acide acrylique ou l'acide méthacrylique
A resist composition comprising a bisonium salt containing a divalent anion having a sulfonate anion structure having a fluorine atom or a trifluoromethyl group at α- or β-position and linked to an aromatic group having an iodine atom or a bromine atom and a carboxylate anion structure bonded to the aromatic group having an iodine atom or a bromine atom, via a linking group having 1 or more carbon atoms, and an onium cation.
Provided is a novel composition, in particular, a composition comprising an inorganic-organic hybrid compound. The composition comprises an inorganic-organic hybrid compound and a hydrophobic resin, wherein the inorganic-organic hybrid compound comprises a polyvinyl alcohol-based resin to which a metal oxide is chemically bonded.
H01M 50/449 - Séparateurs, membranes ou diaphragmes caractérisés par le matériau ayant une structure en couches
H01M 50/489 - Séparateurs, membranes, diaphragmes ou éléments d’espacement dans les cellules caractérisés par leurs propriétés physiques, p. ex. degré de gonflement, hydrophilicité ou propriétés pour court-circuiter
The present invention is a thermally conductive sheet characterized by containing two or more fibrous thermally conductive fillers (B) having different average fiber diameters in a polymer matrix (A), and the ratio of the maximum diameter to the minimum diameter of each of the average fiber diameters being 2:1 to 45:1. Thus, the thermally conductive sheet having excellent thermal conductivity and low specific gravity is provided by being filled with two or more fibrous thermally conductive fillers having different average fiber diameters.
The present disclosure provides an imprinting device and an imprinting method. The present disclosure also provides a stamp comprising a resin-made molding component.
G03F 7/00 - Production par voie photomécanique, p. ex. photolithographique, de surfaces texturées, p. ex. surfaces impriméesMatériaux à cet effet, p. ex. comportant des photoréservesAppareillages spécialement adaptés à cet effet
The present invention relates to a transfer method for transferring a plurality of microstructures that are provided on a substrate to another substrate by laser irradiation, the transfer method comprising a transfer step for irradiating a first microstructure with a laser through the substrate and transferring the first microstructure to the other substrate, and an additional irradiation step for irradiating the transferred first microstructure with at least one laser. There is thereby provided a transfer method with which it is possible to remove residue adhering to a microstructure while improving productivity.
H01L 21/52 - Montage des corps semi-conducteurs dans les conteneurs
H01L 21/60 - Fixation des fils de connexion ou d'autres pièces conductrices, devant servir à conduire le courant vers le ou hors du dispositif pendant son fonctionnement
H01L 33/48 - DISPOSITIFS À SEMI-CONDUCTEURS NON COUVERTS PAR LA CLASSE - Détails caractérisés par les éléments du boîtier des corps semi-conducteurs
62.
AQUEOUS DISPERSION AND COSMETIC PREPARATION CONTAINING SAME
Disclosed is a cosmetic preparation which contains: (a) 10% by mass to 70% by mass of hydrophobized titanium oxide fine particles which have a number average primary particle diameter of 8 nm to 200 nm as determined by an image analysis method of a transmission electron micrograph, and are obtained by hydrophobizing titanium oxide particles with silicone; (b) 1.0% by mass to 30% by mass of an aqueous component which has two or more alcoholic hydroxyl groups; (c) 1.0% by mass to 20% by mass of a polyglycerol-modified silicone which can be dissolved in the component (b); and (d) 8% by mass to 82% by mass of water. The cosmetic preparation has high stability and is excellent in terms of transparency, feeling of use (non-stickiness), and water resistance.
A61K 8/894 - Polysiloxanes saturés, p. ex. diméthicone, phényl triméthicone, C24-C28 méthicone, stéaryl diméthicone modifiés par un groupe polyoxyalkylène, p. ex. cétyl diméthicone copolyol
An onium salt containing an aromatic sulfonic acid anion having an alkyl or fluoroalkyl group, iodized aromatic ring, and fluorinated substituent group generates an acid with controlled diffusion. A chemically amplified positive resist composition comprising the onium salt is also provided. The resist composition is capable of forming a pattern.
A monomer containing as a polymerizable group an acenaphthylene structure having an acid labile group of tertiary ester type attached thereto is provided as well as a polymer comprising repeat units derived from the monomer. A chemically amplified resist composition comprising the polymer has advantages including high sensitivity, high contrast, improved lithography properties, e.g., EL, LWR and profile, collapse resistance during fine pattern formation, and etch resistance after development.
G03F 7/00 - Production par voie photomécanique, p. ex. photolithographique, de surfaces texturées, p. ex. surfaces impriméesMatériaux à cet effet, p. ex. comportant des photoréservesAppareillages spécialement adaptés à cet effet
The purpose of the present invention is to provide: a cyclic organosiloxane which contains an imide bond and a polymerizable unsaturated bond, and which provides a cured product having excellent hardness and bending resistance; and a curable resin composition comprising the cyclic organosiloxane. The present invention provides: a cyclic organosiloxane which contains an imide bond and a polymerizable unsaturated bond and which is represented by general formula (1); and a curable resin composition comprising the cyclic organosiloxane.
The purpose of the present invention is to provide: a cyclic organosiloxane which contains an imide bond and a polymerizable unsaturated bond, and which provides a cured product having excellent hardness and bending resistance; and a curable resin composition comprising the cyclic organosiloxane. The present invention provides: a cyclic organosiloxane which contains an imide bond and a polymerizable unsaturated bond and which is represented by general formula (1); and a curable resin composition comprising the cyclic organosiloxane.
The purpose of the present invention is to provide: a cyclic organosiloxane which contains an imide bond and a polymerizable unsaturated bond, and which provides a cured product having excellent hardness and bending resistance; and a curable resin composition comprising the cyclic organosiloxane. The present invention provides: a cyclic organosiloxane which contains an imide bond and a polymerizable unsaturated bond and which is represented by general formula (1); and a curable resin composition comprising the cyclic organosiloxane.
(In the formula, each R1 independently represents a monovalent hydrocarbon group or a hydrogen atom for which there may be at least one interposed atom selected from oxygen, nitrogen, sulfur, and phosphorus; each Z is independently a monovalent organic group which has an imide bond and a polymerizable unsaturated bond and for which there may be at least one interposed atom selected from oxygen, nitrogen, sulfur, and phosphorus; n is an integer of 2-6; m is an integer of 0-4; and the sum of n+m is 4-6. The arrangement of a siloxane unit in parentheses may be arbitrary.)
Provided is a polyurea polymer that is a product of a reaction between: (a) an amino group-containing organopolysiloxane which is represented by general formula (1) and has an amine equivalent weight of 235-1500 g/mol (in the formula, R1moieties are each independently a monovalent hydrocarbon group which has a primary or secondary amino group and has 1-20 carbon atoms, R2 moieties are each independently a monovalent hydrocarbon group having 1-20 carbon atoms, and n is a value that satisfies the amine equivalent weight); (b) an aliphatic diisocyanate compound having two isocyanate groups per molecule; and (c) an amine compound having two or more amino groups per molecule (excluding component (a)). Also provided is a polyurea composition containing this polymer and an alcohol having one secondary hydroxyl group or one tertiary hydroxyl group per molecule.
An absorption film of a reflective mask blank that is formed on a protection film and can be etched by ion beam etching or methanol etching is patterned by providing an etching prevention film contacted with both of the protection film and the absorption film, and a first hard mask film on the absorption film, and patterning the absorption film by ion beam etching or methanol etching with using a pattern of the first hard mask film as an etching mask.
A resist composition comprises an onium salt of aromatic sulfonic acid having a linkage of two iodized or brominated aromatic groups as the acid generator is provided. The resist composition offers a high sensitivity, reduced LWR and improved CDU independent of whether it is of positive or negative tone. A pattern can be formed by using the resist composition.
C08F 212/14 - Monomères contenant un seul radical aliphatique non saturé contenant un cycle substitué par des hétéro-atomes ou des groupes contenant des hétéro-atomes
C08F 220/18 - Esters des alcools ou des phénols monohydriques des phénols ou des alcools contenant plusieurs atomes de carbone avec l'acide acrylique ou l'acide méthacrylique
C08K 5/45 - Composés hétérocycliques comportant du soufre dans le cycle
G03F 7/00 - Production par voie photomécanique, p. ex. photolithographique, de surfaces texturées, p. ex. surfaces impriméesMatériaux à cet effet, p. ex. comportant des photoréservesAppareillages spécialement adaptés à cet effet
G03F 7/038 - Composés macromoléculaires rendus insolubles ou sélectivement mouillables
G03F 7/039 - Composés macromoléculaires photodégradables, p. ex. réserves positives sensibles aux électrons
The resist composition comprises an onium salt of sulfonic acid which has a linkage of two iodized or brominated aromatic groups as the acid generator. The resist composition offers a high sensitivity, reduced LWR and improved CDU independent of whether it is of positive or negative tone. A pattern can be formed by using the resist composition.
A silicone gel composition in which a crosslinking agent and a base polymer having a specific molecular structure are selectively used in combination, which contains micropowdered silica having a hydrophobized surface and a specific epoxy-group-containing siloxane oligomer, and which yields a silicone gel cured product having a degree of penetration of 10-100 as specified by JIS K6249 upon curing is liquid at room temperature (23° C.±15° C.) but spreads little during application and undergoes little change in shape before and after curing, and therefore is suitable for sealing electrical/electronic components such as photocouplers.
The present invention is a silicone composition comprising: (A) 100 parts by mass of an organopolysiloxane having a viscosity of 0.01-100 Pa·s at 25°C and containing two or more alkenyl groups bonded to silicon atoms per molecule; (B) 10-500 parts by mass of hydrophobic silica particles having an average particle diameter ranging from 10-1,000 nm, having a hydrophobicity of 60% or more according to a methanol titration method, and having alkenyl groups bonded to silicon atoms on the surface; (C) organohydrogen polysiloxane having two or more hydrogen atoms bonded to silicon atoms per molecule, in an amount such that the hydrogen atoms bonded to silicon atoms in component (C) are 0.4-5.0 molar times the total alkenyl groups bonded to the total silicon atoms in the composition; and (D) a platinum group metal catalyst. A silicone composition is thus provided that has excellent handling properties and high tear strength after curing.
The present invention pertains to a thermally conductive silicone composition containing components (A) to (D). (A) An organopolysiloxane which has alkenyl groups bound to silicon atoms on a side chain of the molecule and in which the number of the alkenyl groups per molecule is 2-8. (B) An organohydrogen polysiloxane in which both terminals are blocked with hydrosilyl groups. (C) A thermally conductive filler containing the following components (C-1) to (C-3): (C-1) an aluminum oxide having an average particle size of 0.5-5 µm; (C-2) a spherical aluminum oxide which has an average particle size of 7-25 µm, and which is contained in an amount such that the mass ratio of (C-2) with respect to (C-1) is 0.7-3.0; and (C-3) a magnesium oxide having an average particle size of 40-90 µm. (D) A platinum group metal-based curing catalyst. Accordingly, the present invention provides a thermally conductive silicone sheet that has high restorability even when having a low hardness, and that has a high thermal conductivity suitable for a heat dissipating member of a product in which vibration is generated.
The photosensitive resin composition can be used to form a fine size pattern. The photosensitive resin composition includes: (A) a silicone resin that has a silphenylene structure, a polysiloxane structure, and a fluorene structure at a main chain and has an acryloyl group or a methacryloyl group at a side chain; and (B) a photoradical generator.
PURPOSE: To provide a method capable of detecting a large oxygen deposit existing in a silicon single crystal obtained by a CZ method with good sensitivity.
PURPOSE: To provide a method capable of detecting a large oxygen deposit existing in a silicon single crystal obtained by a CZ method with good sensitivity.
CONSTITUTION: A silicon single crystal is subjected to heat treatment for 30 to 300 minutes at 900 to 1050 deg.C in a dry O2 atmosphere, then, is subjected to heat treatment for 30 to 200 minutes at 1100 to 1200 deg.C in a wet O2 atmosphere. After this crystal is treated with a dilute hydrofluoric acid and an oxide film on the surface of the crystal is removed, the crystal is dipped in a seco solution for 1 to 30 minutes to etch selectively the face <100> and lastly, the number of pieces of OSFs, which appear on the silicon single crystal surface, is found by an optical microscope. Accordingly, by this two-stage heat treatment, as a large oxygen deposit in the crystal is turned into the selective OSFs and the OSFs appear on the crystal surface, an inspection of the quality of the silicon single crystal can be carried out with high sensitivity.
A negative electrode active material for a non-aqueous electrolyte secondary battery containing negative electrode active material particles in which the negative electrode active material particles include particles of a silicon compound (SiOx: 0.5≤x≤1.6), in which the negative electrode active material particles are at least partially coated with carbon material, the negative electrode active material particles contain Li in which content of the Li relative to the negative electrode active material particles is 9.7 mass % or more or less than 13.2 mass %, at least part of the Li is present as Li2SiO3, and when the negative electrode active material particles are measured by X-ray diffraction using Cu-Kα rays, an intensity Ia of a peak around 2θ=47.5° attributable to Si obtained by the X-ray diffraction and a peak intensity Tb of a peak around 2θ=18.7° attributable to Li2SiO3 obtained by the X-ray diffraction satisfy 1≤Ib/Ia≤18.
H01M 4/485 - Emploi de substances spécifiées comme matériaux actifs, masses actives, liquides actifs d'oxydes ou d'hydroxydes inorganiques d'oxydes ou d'hydroxydes mixtes pour insérer ou intercaler des métaux légers, p. ex. LiTi2O4 ou LiTi2OxFy
H01M 4/62 - Emploi de substances spécifiées inactives comme ingrédients pour les masses actives, p. ex. liants, charges
76.
UV-CURABLE SILICONE COMPOSITION AND CURED PRODUCT THEREOF
A silicone composition containing (A) a polysiloxane that has (a) a unit of formula (1) (R1represents a monovalent hydrocarbon group, R2represents an oxygen atom, etc., R3represents an acryloyloxyalkyl group, etc., p represents 0 ≤ p ≤ 10, and a represents 1 ≤ a ≤ 3.) and (b) a unit of R1Rf12/22/2 (R1is the same as above. Rf 1represents a C1-8 fluorinated alkyl group.) and in which 5% or more of the monovalent organic groups on Si are the fluorinated alkyl groups, (B) a polysiloxane resin that has (c) a unit of formula (2) or formula (2') (R6represents a monovalent hydrocarbon group, R7represents an oxygen atom, etc., R8represents an acryloyloxyalkyl group, etc., q represents 0 ≤ q ≤ 10, and c represents 1 ≤ c ≤ 3.) and (d) a unit of Rf23/23/2 (Rf233 groups, and (C) a photopolymerization initiator, is cured rapidly by UV irradiation and yields a releasable cured product.
C08F 299/08 - Composés macromoléculaires obtenus par des interréactions de polymères impliquant uniquement des réactions entre des liaisons non saturées carbone-carbone, en l'absence de monomères non macromoléculaires à partir de polycondensats non saturés à partir de polysiloxanes
C08L 83/07 - Polysiloxanes contenant du silicium lié à des groupes aliphatiques non saturés
C08L 83/08 - Polysiloxanes contenant du silicium lié à des groupes organiques contenant des atomes, autres que le carbone, l'hydrogène et l'oxygène
Provided is a composition in which an ureido group-containing organosilicon compound represented by formula (1) and an amino group-containing organosilicon compound represented by formula (3) are dissolved in a solvent containing alcohol and water. (In the formula, R1represents a hydrogen atom, an alkyl group, or an aryl group, R2represents a hydrogen atom, an alkyl group, or a functional group represented by formula (2), R3represents a hydrogen atom, an alkyl group, or an aryl group, and R4 represents a hydrogen atom, an alkyl group, or a functional group represented by formula (4). a represents an integer of 1-3, m represents an integer of 1-12, b represents an integer of 1-3, n represents an integer of 1-12, p represents an integer of 1-12, and q represents an integer of 1-12.)
The present invention is a composition for forming an organic film, containing: (A) a polymer having a repeating unit represented by the following general formula (1); (B) a resin for forming an organic film; and (C) a solvent, where R1 represents a divalent organic group having 2 to 30 carbon atoms including an aliphatic moiety or an aromatic moiety, each R2 independently represents a hydrogen atom, an alkyl group having 1 to 6 carbon atoms, a hydroxy group, an alkoxy group having 1 to 6 carbon atoms, a halogen atom other than a fluorine atom, a cyano group, an amino group, or a nitro group, and “a” represents 0 or 1, “b” representing 1 to 4 and “c” representing 0 to 3 when “a” is 0, or “b” representing 1 to 6 and “c” representing 0 to 5 when “a” is 1. This can provide a composition for forming an organic film having excellent film-formability on a substrate and excellent filling property, and being excellent in hump-suppression at the time of an EBR process.
The present invention is a composition for forming an organic film, containing: (A) a polymer having a repeating unit represented by the following general formula (1); (B) a resin for forming an organic film; and (C) a solvent, where R1 represents a divalent organic group having 2 to 30 carbon atoms including an aliphatic moiety or an aromatic moiety, each R2 independently represents a hydrogen atom, an alkyl group having 1 to 6 carbon atoms, a hydroxy group, an alkoxy group having 1 to 6 carbon atoms, a halogen atom other than a fluorine atom, a cyano group, an amino group, or a nitro group, and “a” represents 0 or 1, “b” representing 1 to 4 and “c” representing 0 to 3 when “a” is 0, or “b” representing 1 to 6 and “c” representing 0 to 5 when “a” is 1. This can provide a composition for forming an organic film having excellent film-formability on a substrate and excellent filling property, and being excellent in hump-suppression at the time of an EBR process.
H01L 21/033 - Fabrication de masques sur des corps semi-conducteurs pour traitement photolithographique ultérieur, non prévue dans le groupe ou comportant des couches inorganiques
C09D 129/10 - Homopolymères ou copolymères d'éthers non saturés
Provided is a silicone gel composition which contains, as a base polymer, a silicon-bonded alkenyl group-containing straight-chain or branched-chain organopolysiloxane containing a specific amount of a diphenylsiloxane unit in the molecule, and contains a specific blending amount of a cross-linking agent having a specific molecular structure, a platinum-based curing catalyst, a hydrophobized fine silica powder, and an isocyanuric acid derivative having a specific molecular structure having at least two trialkoxysilyl-substituted alkyl groups in the molecule, wherein the curing of the silicone gel composition gives a silicone gel cured product having a penetration of 10-100 as specified in JIS K6249. Since the silicone gel composition exhibits little spread when applied to substrates of various electronic boards such as control circuit boards, little change in shape before and after thermal curing, and little change in the penetration of the cured product under high temperature conditions, a specific semiconductor element such as a photocoupler mounted on a control board can be exclusively coated (so-called spot potting) and the element and the like can be sealed in a desired shape. Thus, the silicone gel composition is useful as a silicone gel composition for sealing a photocoupler and the like.
The present invention relates to an addition-curable silicone resin composition characterized by comprising (A) a linear organopolysiloxane having, per molecule, two or more silicon-atom-bonded alkenyl groups, (B) an organohydrogenpolysiloxane having, per molecule, two or more silicon-atom-bonded hydrogen atoms and having no aliphatic unsaturated bond, (C) a polyorganosilsesquioxane having, per molecule, one or more silicon-atom-bonded alkenyl groups, one or more silicon-atom-bonded alkoxy groups, and one or more silicon-atom-bonded epoxy-containing groups, and (D) a platinum-group metal-based catalyst. Due to the configuration, there are provided: an addition-curable silicone resin composition that gives a cured object excellent in terms of adhesion to the substrate and thermal impact resistance; and an optical semiconductor device obtained by encapsulation with the cured object and having high reliability.
KOCHI PREFECTURAL PUBLIC UNIVERSITY CORPORATION (Japon)
Inventeur(s)
Yasuoka Tatsuya
Hashigami Hiroshi
Kawaharamura Toshiyuki
Watabe Takenori
Sakatsume Takahiro
Liu Li
Susami Hiromu
Komatsu Masahiko
Abrégé
The present invention is a laminate that includes a crystal substrate, a first crystal layer mainly composed of a first crystalline metal oxide semiconductor formed directly or via another layer on a main surface of the crystal substrate, and a second crystal layer mainly composed of a second crystalline metal oxide semiconductor formed directly or via another layer on the first crystal layer, wherein the laminate is characterized in that the second crystalline metal oxide semiconductor has the same composition as that of the first crystalline metal oxide semiconductor and has a crystal phase different from that of the first crystalline metal oxide semiconductor. Thus, provided are a laminate containing a crystalline metal oxide semiconductor having excellent physical properties and enabling the production of a high-performance semiconductor device and a production method for producing the laminate easily, inexpensively, and stably.
The present invention enhances light extraction efficiency (LEE) in a 230 nm band UVC-LED. This AlGaN-based deep ultraviolet LED having a light emission wavelength λ has a photonic crystal periodic structure in a thickness direction, wherein the distance between an upper part of a quantum well layer and a bottom part of the photonic crystal periodic structure substantially satisfies a resonance condition λ/n of free end reflection. Here, n is the weighted average refractive index of a layer structure existing between the upper part of the quantum well layer and the bottom part of the photonic crystal periodic structure.
H01L 33/10 - DISPOSITIFS À SEMI-CONDUCTEURS NON COUVERTS PAR LA CLASSE - Détails caractérisés par les corps semi-conducteurs ayant une structure réfléchissante, p.ex. réflecteur de Bragg en semi-conducteur
H01L 33/32 - Matériaux de la région électroluminescente contenant uniquement des éléments du groupe III et du groupe V de la classification périodique contenant de l'azote
83.
CHEMICALLY AMPLIFIED NEGATIVE RESIST COMPOSITION AND RESIST PATTERN FORMING PROCESS
A chemically amplified negative resist composition comprising (A) a photoacid generator in the form of an onium salt containing an aromatic sulfonic acid anion having a bulky substituent-bearing aromatic ring structure and a fluorinated substituent and (B) a base polymer is provided. The resist composition exhibits a high resolution during pattern formation and forms a pattern with reduced LER and fidelity.
The present invention provides an 8-(acyloxy)alkanal compound (1), wherein n represents 0 or 1, and R1 represents a linear or branched alkyl group having 1 to 10 carbon atoms, a phenyl group, or a phenyl group in which one or more hydrogen atoms are substituted with a halogen atom, and a process for preparing the same. The process comprises the steps of subjecting the aforesaid 8-(acyloxy)alkanal compound (1) to a nucleophilic addition reaction with a nucleophilic reagent, alkyl compound (2), wherein M1 represents Li, MgZ1, CuZ1, or CuLiZ1, n represents 0 or 1, and Z1 represents a halogen atom, a methyl group, or an ethyl group, to form 2,9-undecanediol (3), and subjecting the 2,9-undecanediol (3) to an acetylation reaction to form the 2,9-diacetoxyundecane (4).
The present invention provides an 8-(acyloxy)alkanal compound (1), wherein n represents 0 or 1, and R1 represents a linear or branched alkyl group having 1 to 10 carbon atoms, a phenyl group, or a phenyl group in which one or more hydrogen atoms are substituted with a halogen atom, and a process for preparing the same. The process comprises the steps of subjecting the aforesaid 8-(acyloxy)alkanal compound (1) to a nucleophilic addition reaction with a nucleophilic reagent, alkyl compound (2), wherein M1 represents Li, MgZ1, CuZ1, or CuLiZ1, n represents 0 or 1, and Z1 represents a halogen atom, a methyl group, or an ethyl group, to form 2,9-undecanediol (3), and subjecting the 2,9-undecanediol (3) to an acetylation reaction to form the 2,9-diacetoxyundecane (4).
C07C 67/42 - Préparation d'esters d'acides carboxyliques par oxydation des groupes précurseurs de la partie acide de l'ester d'alcools secondaires ou de cétones
C07C 67/03 - Préparation d'esters d'acides carboxyliques par réaction d'un groupe ester avec un groupe hydroxyle
85.
CARBON NANOTUBE WATER DISPERSION, CARBON NANOTUBE UNWOVEN CLOTH, AND METHODS OF PRODUCING THE SAME
Provided is a carbon nanotube water dispersion which is suitable for producing a highly-purified carbon nanotube unwoven cloth as well as a highly-purified carbon nanotube unwoven produced from the carbon nanotube water dispersion. The carbon nanotube water dispersion contains 100 parts by mass of water, 0.001 parts by mass or more of a basic compound, and 0.001 parts by mass or more of a cholic acid derivative.
NATIONAL UNIVERSITY CORPORATION TOYOHASHI UNIVERSITY OF TECHNOLOGY (Japon)
Inventeur(s)
Watanabe, Toshiaki
Goto, Taichi
Inoue, Mitsuteru
Abrégé
A Q-switch structure including a solid-state laser medium and a magneto-optical material. The solid-state laser medium and the magneto-optical material are joined and integrated, a first anti-reflecting film for adhesive is formed on a surface of the solid-state laser medium, and a second anti-reflecting film for adhesive is formed on a surface of the magneto-optical material. The first anti-reflecting film for adhesive on the solid-state laser medium and the second anti-reflecting film for adhesive on the magneto-optical material are bonded via a translucent material having a transparency at a laser oscillation wavelength of laser oscillated from the solid-state laser medium. This provides the Q-switch that contributes to the miniaturization of a laser apparatus and has high beam quality.
[Problem] To provide: a polymerizable silicone monomer providing a polymer excellent in transparency, surface hydrophilicity, durability, and stain resistance; a method for producing same; a curable composition including the monomer; a polymer obtained by polymerizing the composition; and an ophthalmic device using the polymer. [Solution] This polymerizable silicone monomer is represented by formula (1) (in the formula, each R1is independently a monovalent hydrocarbon having 1-4 carbon atoms; each R2is independently an alkyl group having 1-10 carbon atoms or an aryl group having 6-10 carbon atoms; R3is a hydrogen atom or a methyl group; A1is a single bond or a divalent hydrocarbon group having 1-20 carbon atoms; Q is a divalent group selected from-A2-O-A3- and -O-A4-O -; A2and A3are each independently a single bond or a divalent hydrocarbon group which may have a branch of 1-3 carbon atoms, wherein at least one hydrogen atom bonded to a carbon atom of the divalent hydrocarbon group may be substituted with an alkoxy group having 1-4 carbon atoms, provided that A2and A3are not a single bond, A4 is a divalent hydrocarbon group which may have a branch of 1-3 carbon atoms, and at least one hydrogen atom bonded to a carbon atom of the divalent hydrocarbon group may be substituted with an alkoxy group having 1-4 carbon atoms; and n is an integer of 1-3).
C08F 30/08 - Homopolymères ou copolymères de composés contenant un ou plusieurs radicaux aliphatiques non saturés, chaque radical ne contenant qu'une seule liaison double carbone-carbone et contenant du phosphore, du sélénium, du tellure ou un métal contenant un métal contenant du silicium
C07F 7/08 - Composés comportant une ou plusieurs liaisons C—Si
C07F 7/18 - Composés comportant une ou plusieurs liaisons C—Si ainsi qu'une ou plusieurs liaisons C—O—Si
The present invention provides a thermally conductive silicone composition that provides a cured product which has low thermal resistance and excellent reliability. Provided is a thermally conductive silicone composition comprising components (A), (B), (C), (D), (E), and (F). (A) is an organopolysiloxane which has at least two alkenyl groups at a molecular chain end, and which has a kinematic viscosity of 100-500,000 mm2/s at 25°C. (B) is a hydrolyzable methyl polysiloxane which is represented by general formula (1) and which has three functional groups at one end (in formula (1), R1 is a C1-6 alkyl group and a is a number of 5 to 100). (C) is a bismuth-tin-based alloy powder which has a melting point of not higher than 220°C. (D) is a thermally conductive filler other than component (C) which has a melting point of not lower than 280°C and which has an average particle size of not less than 3 μm. (E) is an organohydrogen polysiloxane which, per molecule, has a hydrogen atom directly bonded to at least two silicon atoms (Si-H group). (F) is a catalyst selected from among platinum and platinum compounds.
Provided is a resin composition containing:
(A) a first cyclic imide compound of the following formula (1):
Provided is a resin composition containing:
(A) a first cyclic imide compound of the following formula (1):
wherein A independently represents a tetravalent organic group having a cyclic structure, Q independently represents an alicyclic hydrocarbon group of the formula (2):
Provided is a resin composition containing:
(A) a first cyclic imide compound of the following formula (1):
wherein A independently represents a tetravalent organic group having a cyclic structure, Q independently represents an alicyclic hydrocarbon group of the formula (2):
wherein R1, R2, R3, and R4 independently represent a hydrogen atom or an alkyl group having 1 to 5 carbon atoms, and x1 and x2 are each 0 to 4,
wherein B independently represents a divalent hydrocarbon group (excluding the group represented by the formula (2)),
wherein X represents a hydrogen atom or a methyl group, and
wherein n is 1 to 200;
(B) a second cyclic imide compound of the formula (3):
Provided is a resin composition containing:
(A) a first cyclic imide compound of the following formula (1):
wherein A independently represents a tetravalent organic group having a cyclic structure, Q independently represents an alicyclic hydrocarbon group of the formula (2):
wherein R1, R2, R3, and R4 independently represent a hydrogen atom or an alkyl group having 1 to 5 carbon atoms, and x1 and x2 are each 0 to 4,
wherein B independently represents a divalent hydrocarbon group (excluding the group represented by the formula (2)),
wherein X represents a hydrogen atom or a methyl group, and
wherein n is 1 to 200;
(B) a second cyclic imide compound of the formula (3):
wherein A, B, and X are defined as above in the formula (1), and s is 0 to 200;
(C) an epoxy compound; and
(D) a curing catalyst.
C08G 59/68 - Macromolécules obtenues par polymérisation à partir de composés contenant plusieurs groupes époxyde par molécule en utilisant des agents de durcissement ou des catalyseurs qui réagissent avec les groupes époxyde caractérisées par les catalyseurs utilisés
C08J 5/24 - Imprégnation de matériaux avec des prépolymères pouvant être polymérisés en place, p. ex. fabrication des "prepregs"
H05K 1/03 - Emploi de matériaux pour réaliser le substrat
90.
Compound For Forming Metal-Containing Film, Composition For Forming Metal-Containing Film, And Patterning Process
The present invention is a compound for forming a metal-containing film, being a reaction product between a compound having two or more diol structures per molecule and a Sn compound, and being a monomolecular compound containing two or more Sn atoms per molecule. This can provide: a metal compound having better dry etching resistance than conventional organic underlayer film materials and also having high filling and planarizing properties; a composition for forming a metal-containing film containing the compound; and a patterning process in which the composition is used as a resist underlayer film material.
G03F 7/11 - Matériaux photosensibles caractérisés par des détails de structure, p. ex. supports, couches auxiliaires avec des couches de recouvrement ou des couches intermédiaires, p. ex. couches d'ancrage
C08G 61/10 - Composés macromoléculaires contenant uniquement des atomes de carbone dans la chaîne principale de la molécule, p. ex. polyxylylènes uniquement des atomes de carbone aromatiques, p. ex. polyphénylènes
The present invention is a compound for forming a metal-containing film, where the compound is represented by the following general formula (M), where R1 and R2 each independently represent an organic group or a halogen atom; and W represents a divalent organic group represented by the following general formula (W-1) or (W-2). This can provide: a compound for forming a metal-containing film having excellent dry etching resistance and also having high filling and planarizing properties; a composition for forming a metal-containing film containing the compound; and a patterning process in which the composition is used.
The present invention is a compound for forming a metal-containing film, where the compound is represented by the following general formula (M), where R1 and R2 each independently represent an organic group or a halogen atom; and W represents a divalent organic group represented by the following general formula (W-1) or (W-2). This can provide: a compound for forming a metal-containing film having excellent dry etching resistance and also having high filling and planarizing properties; a composition for forming a metal-containing film containing the compound; and a patterning process in which the composition is used.
G03F 7/00 - Production par voie photomécanique, p. ex. photolithographique, de surfaces texturées, p. ex. surfaces impriméesMatériaux à cet effet, p. ex. comportant des photoréservesAppareillages spécialement adaptés à cet effet
G03F 7/025 - Composés photopolymérisables non macromoléculaires contenant des triples liaisons carbone-carbone, p. ex. composés acétyléniques
G03F 7/027 - Composés photopolymérisables non macromoléculaires contenant des doubles liaisons carbone-carbone, p. ex. composés éthyléniques
G03F 7/40 - Traitement après le dépouillement selon l'image, p. ex. émaillage
92.
CURABLE MALEIMIDE RESIN COMPOSITION, ADHESIVE, PRIMER, CHIP COATING AGENT, AND SEMICONDUCTOR DEVICE
Provided are a curable maleimide resin composition that can avoid the usage of a problematic solvent, such as NMP among aprotic polar solvents, having a high boiling point and toxicity, can be cured at a relatively low temperature, and provide a cured product having a superior adhesiveness to semiconductor materials. The curable maleimide resin composition contains:
(A) a maleimide compound that has a number average molecular weight of 5,000 to 50,000;
(B) a reaction initiator; and
(C) a silane coupling agent that has one or more epoxy groups in one molecule; and optionally
(D) a diaminotriazine ring-containing imidazole.
C08K 5/5435 - Composés contenant du silicium contenant de l'oxygène contenant de l'oxygène dans un cycle
C09D 5/00 - Compositions de revêtement, p. ex. peintures, vernis ou vernis-laques, caractérisées par leur nature physique ou par les effets produitsApprêts en pâte
C09D 7/63 - Adjuvants non macromoléculaires organiques
C09D 179/08 - PolyimidesPolyesterimidesPolyamide-imidesPolyamide-acides ou précurseurs similaires de polyimides
C09J 179/08 - PolyimidesPolyesterimidesPolyamide-imidesPolyamide-acides ou précurseurs similaires de polyimides
H01L 23/29 - Encapsulations, p. ex. couches d’encapsulation, revêtements caractérisées par le matériau
93.
THERMAL CONDUCTIVE SILICONE COMPOSITION AND SEMICONDUCTOR APPARATUS
A thermal conductive silicone composition including: (A) an organopolysiloxane having a kinematic viscosity at 25° C. of 10 to 100,000 mm2/s and not containing an alkoxysilyl group; (B) an organopolysiloxane containing an alkoxysilyl group; (C) one or more thermal conductive fillers selected from irregular-shaped, round, and polyhedral fillers having a thermal conductivity of 10 W/m·K or more; and (D) hydrophobic spherical silica particles having a D50 in a range of 0.005 to 1 μm and a D90/D10 of 3 or less in a volume-based particle size distribution and having an average circularity of 0.8 to 1, wherein an amount of the component (C) is 40 to 85% by volume of the entire thermal conductive silicone composition.
31/24/24/2 unit (in the formula, each R independently represents a monovalent hydrocarbon group having 1 to 6 carbon atoms, but at least two R moieties in each molecule are alkenyl groups); (C) an organohydrogen polysiloxane that contains, in each molecule, at least two hydrogen atoms that are each bonded to a silicon atom; and (D) a hydrosilylation reaction catalyst. This coating composition for electrochemical element separators enables the achievement of an electrochemical element separator which has excellent tensile strength, and which is capable of maintaining insulation even in cases where combustion occurs.
H01M 50/449 - Séparateurs, membranes ou diaphragmes caractérisés par le matériau ayant une structure en couches
H01M 50/454 - Séparateurs, membranes ou diaphragmes caractérisés par le matériau ayant une structure en couches comprenant une couche non fibreuse et une couche fibreuse superposées l’une sur l’autre
95.
PLATINUM CATALYST MIXTURE, CURABLE LIQUID SILICONE COMPOSITION AND METHOD FOR CURING CURABLE LIQUID SILICONE COMPOSITION, AND METHOD FOR PREPARING PLATINUM CATALYST MIXTURE
An aerobic platinum catalyst mixture comprising a reaction mixture of a platinum-alkenyl group-containing organosiloxane complex and an organic silicon compound having at least one SiH group per molecule in an amount that makes a molar excess of hydrogen atoms bonded to silicon atoms (SiH groups) relative to the alkenyl groups in the platinum-alkenyl group-containing organosiloxane complex. The platinum catalyst mixture has the property of catalytic activity being low as a hydrosilylation addition reaction catalyst when in an oxygen-free, low-moisture content closed state in which contact with moisture (humidity) and oxygen is cut off and being activated as a hydrosilylation addition reaction catalyst by contact with moisture (humidity) and/or oxygen in the atmosphere.
A negative electrode active material including negative electrode active material particles, wherein the negative electrode active material particles contain silicon oxide particles coated with a carbon layer, at least a part of the silicon oxide particles contains at least one selected from the group consisting of Li2SiO3, Li4SiO4, and Li6Si2O7, and a part of at least an outermost layer of the negative electrode active material particles is coated with a layer of a plasticizer. This can provide: a negative electrode active material that can increase stability in slurry formation while achieving sufficient battery characteristics; and a negative electrode including such a negative electrode active material.
H01M 4/36 - Emploi de substances spécifiées comme matériaux actifs, masses actives, liquides actifs
H01M 4/133 - Électrodes à base de matériau carboné, p. ex. composés d'intercalation du graphite ou CFx
H01M 4/48 - Emploi de substances spécifiées comme matériaux actifs, masses actives, liquides actifs d'oxydes ou d'hydroxydes inorganiques
H01M 4/58 - Emploi de substances spécifiées comme matériaux actifs, masses actives, liquides actifs de composés inorganiques autres que les oxydes ou les hydroxydes, p. ex. sulfures, séléniures, tellurures, halogénures ou LiCoFyEmploi de substances spécifiées comme matériaux actifs, masses actives, liquides actifs de structures polyanioniques, p. ex. phosphates, silicates ou borates
H01M 4/587 - Matériau carboné, p. ex. composés au graphite d'intercalation ou CFx pour insérer ou intercaler des métaux légers
H01M 4/62 - Emploi de substances spécifiées inactives comme ingrédients pour les masses actives, p. ex. liants, charges
H01M 10/056 - Accumulateurs à électrolyte non aqueux caractérisés par les matériaux utilisés comme électrolytes, p. ex. électrolytes mixtes inorganiques/organiques
97.
FLUORINE-CONTAINING ETHER COMPOSITION, SURFACE TREATMENT AGENT, AND ARTICLE
3323323233O-) is 0.01-0.17. The fluorine-containing ether composition can form a cured film that exhibits water-and oil-repellency and excellent anti-fouling properties, heat resistance, surface release properties and durability against eraser abrasion.
C08G 65/336 - Polymères modifiés par post-traitement chimique avec des composés organiques contenant du silicium
C08L 71/00 - Compositions contenant des polyéthers obtenus par des réactions créant une liaison éther dans la chaîne principaleCompositions contenant des dérivés de tels polymères
C09K 3/18 - Substances non couvertes ailleurs à appliquer sur des surfaces pour y minimiser l'adhérence de la glace, du brouillard ou de l'eauSubstances antigel ou provoquant le dégel pour application sur des surfaces
98.
Compound For Forming Metal-Containing Film, Composition For Forming Metal-Containing Film, And Patterning Process
The present invention aims to provide: a compound for forming a metal-containing film that yields a resist middle layer film enabling to obtain a favorable pattern shape and having high adhesiveness to a resist upper layer film to prevent collapse of a fine pattern in a fine patterning process in a semiconductor device manufacturing process; a composition for forming a metal-containing film using the compound; and a patterning process using the composition. A compound for forming a metal-containing film contains: at least one metal atom selected from a group consisting of Ti, Zr, and Hf; and a multidentate ligand coordinated to the metal atom and containing a cyclic ether structure having 2 to 13 carbon atoms.
A method for producing a silicone particle, the silicone particle including:
a dialkylsiloxane unit of the general formula (1),
A method for producing a silicone particle, the silicone particle including:
a dialkylsiloxane unit of the general formula (1),
R42SiO2/2 (1)
A method for producing a silicone particle, the silicone particle including:
a dialkylsiloxane unit of the general formula (1),
R42SiO2/2 (1)
wherein, R4s represent a monovalent hydrocarbon group having 1 to 6 carbon atoms; and
a poly(oxyalkylene)methylsiloxane unit of the general formula (2),
A method for producing a silicone particle, the silicone particle including:
a dialkylsiloxane unit of the general formula (1),
R42SiO2/2 (1)
wherein, R4s represent a monovalent hydrocarbon group having 1 to 6 carbon atoms; and
a poly(oxyalkylene)methylsiloxane unit of the general formula (2),
wherein R1s represent a hydrogen atom or a monovalent hydrocarbon group having 1 to 6 carbon atoms, R2s represent a divalent aliphatic group having 1 to 6 carbon atoms, and “n” is a number that satisfies 1≤n≤50,
wherein the silicone particle has an oxyalkylene group in a surface thereof,
the method including
polymerizing a composition containing (A) an organopolysiloxane having a radical polymerization reactive group, (B) a polyoxyalkylene-modified silicone having a radical polymerizable group, and (C) a redox radical polymerization initiator, in a state of being dispersed in water at a low temperature of 50° C. or less.
Provided are: an organopolysiloxane that, when used to treat a hydrophobic powder, imparts excellent dispersibility in water to the treated hydrophobic powder; a treated hydrophobic powder; a dispersion; and a cosmetic.
Provided are: an organopolysiloxane that, when used to treat a hydrophobic powder, imparts excellent dispersibility in water to the treated hydrophobic powder; a treated hydrophobic powder; a dispersion; and a cosmetic.
The organopolysiloxane contains a (poly)glycerin group and a polyoxvalkylene group.
A61K 8/894 - Polysiloxanes saturés, p. ex. diméthicone, phényl triméthicone, C24-C28 méthicone, stéaryl diméthicone modifiés par un groupe polyoxyalkylène, p. ex. cétyl diméthicone copolyol
A61Q 19/00 - Préparations pour les soins de la peau
C08G 77/46 - Polymères séquencés ou greffés contenant des segments de polysiloxanes contenant des segments de polyéthers
