Provided is a curable liquid silicone composition comprising two types of platinum catalysts which are a platinum catalyst that is activated by irradiation with UV rays to act as a hydrosilylation addition reaction catalyst and an aerobic platinum catalyst mixture that is activated by being in contact with moisture and/or oxygen, particularly with atmospheric moisture (humidity) and/or oxygen to act as hydrosilylation addition reaction catalyst. The curable liquid silicone composition has long-term storage stability as a single-liquid composition. Said composition is a curable liquid silicone rubber composition or a curable liquid silicone gel composition that, after being irradiated with UV rays at room temperature and further being exposed to the atmosphere for a prescribed time, exhibits excellent UV curing properties and favorable curing properties of a non-UV-irradiated part (shadow parts).
C08G 77/12 - Polysiloxanes contenant du silicium lié à l'hydrogène
C08G 77/20 - Polysiloxanes contenant du silicium lié à des groupes aliphatiques non saturés
C08J 3/24 - Réticulation, p. ex. vulcanisation, de macromolécules
C08J 3/28 - Traitement par ondes énergétiques ou par rayonnement de particules
2.
SEED SUBSTRATE FOR HIGH CHARACTERISTIC EPITAXIAL GROWTH, METHOD FOR PRODUCING SEED SUBSTRATE FOR HIGH CHARACTERISTIC EPITAXIAL GROWTH, SEMICONDUCTOR SUBSTRATE AND METHOD FOR PRODUCING SEMICONDUCTOR SUBSTRATE
The seed substrate for epitaxial growth has a support substrate, a planarizing layer of 0.5 to 3 μm provided on the top surface of the support substrate, and a seed crystal layer provided on the top surface of the planarizing layer. The support substrate includes a composite ceramic core composed of group III nitride polycrystalline ceramics and at least one nitride or oxide of group III or IV, which is a fiber-shaped single crystal, and an encapsulating layer of 0.05 to 1.5 μm that encapsulates the core. The seed crystal layer is a layer of Si<111> single crystals of 0.04 to 1.5 μm. The purpose is to obtain high-quality, inexpensive seed substrates with few crystal defects for epitaxial growth of epitaxial substrates and solid substrates of group III nitrides such as AlN, AlxGa1-xN (0
C30B 33/04 - Post-traitement des monocristaux ou des matériaux polycristallins homogènes de structure déterminée en utilisant des champs électriques ou magnétiques ou des rayonnements corpusculaires
H01L 21/02 - Fabrication ou traitement des dispositifs à semi-conducteurs ou de leurs parties constitutives
H10D 62/85 - Corps semi-conducteurs, ou régions de ceux-ci, de dispositifs ayant des barrières de potentiel caractérisés par les matériaux étant des matériaux du groupe III-V, p. ex. GaAs
3.
NORBORNENYL GROUP-CONTAINING COMPOUND AND METHOD FOR PRODUCING SAME
The present invention provides a compound which contains a norbornenyl group that is represented by general formula (1). (1): X(-Z-R1nn (In the formula, X represents an n-valent organic group that includes a cyclic structure and does not contain a silicon atom, each R1independently represents an allyl group or a norbornenyl methyl group, provided that at least one R1 represents a norbornenyl methyl group, Z represents a single bond, -O-, or -C(=O)O-, and n represents a number of 2-4.) Consequently, there is provided a compound that has a polycyclic hydrocarbon skeleton and a norbornenyl group, which is a group having an aliphatic unsaturated bond that enables a hydrosilylation addition reaction, the compound being obtained by an inexpensive and simple method.
C07C 41/30 - Préparation d'éthers par des réactions ne formant pas de liaisons sur l'oxygène de la fonction éther par augmentation du nombre d'atomes de carbone, p. ex. par oligomérisation
C07C 43/215 - Éthers une liaison sur l'oxygène de la fonction éther étant sur un atome de carbone d'un cycle aromatique à six chaînons avec une insaturation autre que celle des cycles aromatiques à six chaînons
C07C 67/293 - Préparation d'esters d'acides carboxyliques par modification de la partie hydroxyle de l'ester sans introduction d'un groupe ester par isomérisationPréparation d'esters d'acides carboxyliques par modification de la partie hydroxyle de l'ester sans introduction d'un groupe ester par modification de la taille du squelette carboné
C07C 69/76 - Esters d'acides carboxyliques dont un groupe carboxyle estérifié est lié à un atome de carbone d'un cycle aromatique à six chaînons
C07D 251/34 - Esters cyanuriques ou isocyanuriques
4.
NEGATIVE ELECTRODE ACTIVE MATERIAL AND METHOD FOR MANUFACTURING SAME
The present invention provides a negative electrode active material which has negative electrode active material particles, wherein: the negative electrode active material particles each include a porous carbon structure; amorphous low valence nano silicon oxide is dispersed inside the porous carbon structure; the low valence nano silicon oxide includes states of SiOx (x < 1.0); and at least a part of the surface layer part of the low valence nano silicon oxide exposed on the surface of the porous carbon structure is coated with a decomposition product and/or a polymerization product of an organosilicon compound that is represented by general formula (1): Si(R1ll(R2mm(R34-l-m4-l-m. (In general formula (1), R1represents an alkyl group having 1 to 20 carbon atoms, R2represents an alkenyl group having 2 to 20 carbon atoms, and R3 represents an alkynyl group having 2 to 20 carbon atoms. In addition, l and m each independently represent an integer of 0 to 4.) Due to this configuration, it is possible to provide a negative electrode active material that can increase the capacity while maintaining the battery characteristics.
H01M 4/48 - Emploi de substances spécifiées comme matériaux actifs, masses actives, liquides actifs d'oxydes ou d'hydroxydes inorganiques
C01B 33/029 - Préparation par décomposition ou réduction de composés de silicium gazeux ou vaporisés autres que la silice ou un matériau contenant de la silice par décomposition de monosilane
H01M 4/36 - Emploi de substances spécifiées comme matériaux actifs, masses actives, liquides actifs
5.
NEGATIVE ELECTRODE ACTIVE MATERIAL AND METHOD FOR MANUFACTURING SAME
The present invention is a negative electrode active material comprising negative electrode active material particles, characterized in that: the negative electrode active material particles include a porous carbon structure; an amorphous low valence nano silicon oxide is dispersed inside the porous carbon structure; a carbon composite containing silicon as a core is dispersed in at least a surface layer portion of the inside of the porous carbon structure; the low valence nano silicon oxide contains SiOx: x<1.0; and the low valence nano silicon oxide is dispersed in a deep layer portion that is deeper than at least the carbon composite containing the silicon as a core among the inside of the porous carbon structure. According to the configuration, a negative electrode active material capable of improving battery cycle characteristics and increasing capacity is provided.
An addition-curable liquid silicone rubber composition for an airbag that includes (A) an organopolysiloxane containing two or more alkenyl groups bonded to a silicon atom per molecule and having a polymerization degree of 50 to 2,000, (B) an organohydrogenpolysiloxane containing two or more hydrosilyl groups per molecule, (C) a silica fine powder having a BET specific surface area of 50 m2/g or more, (D) a catalyst for hydrosilylation reaction, (E) an organosilicon compound containing one or more functional groups selected from the groups consisting of an epoxy group, an isocyanate group, and a (meth)acrylic group, and (F) an organosilicon compound containing six or more alkoxy groups bonded directly to a silicon atom per molecule. It is possible to provide an addition-curable liquid silicone rubber composition for an airbag that is excellent in slippage resistance when applied on the base fabric for an airbag and cured, and an airbag.
The present invention provides a film forming apparatus which includes: an atomizing unit that generates mist by atomizing a starting material solution; a carrier gas supply unit that supplies a carrier gas for conveying the mist; a film forming unit that forms a film on a base material by heat-treating the mist; and a conveyance unit which connects the atomizing unit and the film forming unit, and in which the mist is conveyed by the carrier gas. The film forming unit is provided with: a nozzle for supplying the mist, which has been rectified, to the base material; and a microwave heating device for irradiating the mist in the nozzle with microwaves of a multimode system so as to heat the mist. Consequently, a film forming apparatus is provided which is capable of forming a film that has good in-plane uniformity of the film thickness and high crystallinity at a high film forming speed by supplying a large amount of mist to a large diameter substrate while suppressing foreign matter and abnormal growth.
C23C 16/511 - Revêtement chimique par décomposition de composés gazeux, ne laissant pas de produits de réaction du matériau de la surface dans le revêtement, c.-à-d. procédés de dépôt chimique en phase vapeur [CVD] caractérisé par le procédé de revêtement au moyen de décharges électriques utilisant des décharges à micro-ondes
C23C 16/448 - Revêtement chimique par décomposition de composés gazeux, ne laissant pas de produits de réaction du matériau de la surface dans le revêtement, c.-à-d. procédés de dépôt chimique en phase vapeur [CVD] caractérisé par le procédé de revêtement caractérisé par le procédé utilisé pour produire des courants de gaz réactifs, p. ex. par évaporation ou par sublimation de matériaux précurseurs
H01L 21/205 - Dépôt de matériaux semi-conducteurs sur un substrat, p. ex. croissance épitaxiale en utilisant la réduction ou la décomposition d'un composé gazeux donnant un condensat solide, c.-à-d. un dépôt chimique
H01L 21/368 - Dépôt de matériaux semi-conducteurs sur un substrat, p. ex. croissance épitaxiale en utilisant un dépôt liquide
8.
FILM FORMING DEVICE, FILM FORMING METHOD, CRYSTALLINE METAL OXIDE FILM, AND LAMINATED STRUCTURE AND SEMICONDUCTOR DEVICE USING SAME
The present invention is a film forming device comprising: an atomization unit that generates mist by atomizing a raw material solution; a carrier gas supply unit that supplies a carrier gas for conveying the mist; a film formation unit that subjects the mist to a heat treatment to form a film on a base body; a conveyance unit which has a supply pipe through which the mist is conveyed by the carrier gas and which connects the atomization unit and the inside of the film formation unit; and a microwave heating device that irradiates the mist with microwaves to heat the mist between the atomization unit and the base body. Consequently, a film forming device capable of forming a film having high crystallinity at a high film formation rate on a large-diameter substrate while suppressing foreign matter and abnormal growth is provided.
C23C 16/511 - Revêtement chimique par décomposition de composés gazeux, ne laissant pas de produits de réaction du matériau de la surface dans le revêtement, c.-à-d. procédés de dépôt chimique en phase vapeur [CVD] caractérisé par le procédé de revêtement au moyen de décharges électriques utilisant des décharges à micro-ondes
C23C 16/448 - Revêtement chimique par décomposition de composés gazeux, ne laissant pas de produits de réaction du matériau de la surface dans le revêtement, c.-à-d. procédés de dépôt chimique en phase vapeur [CVD] caractérisé par le procédé de revêtement caractérisé par le procédé utilisé pour produire des courants de gaz réactifs, p. ex. par évaporation ou par sublimation de matériaux précurseurs
H01L 21/205 - Dépôt de matériaux semi-conducteurs sur un substrat, p. ex. croissance épitaxiale en utilisant la réduction ou la décomposition d'un composé gazeux donnant un condensat solide, c.-à-d. un dépôt chimique
H01L 21/368 - Dépôt de matériaux semi-conducteurs sur un substrat, p. ex. croissance épitaxiale en utilisant un dépôt liquide
The present invention provides a curable silicone composition which is characterized by containing 100 parts by mass of (A) an organopolysiloxane compound that has a substituent represented by general formula (1) in each molecule and an effective amount of (B) a metal compound that is capable of catalyzing a [2+2+2] cycloaddition reaction. (In the formula, R1independently represents a substituted or unsubstituted monovalent hydrocarbon group or a hydrogen atom, R2independently represents a substituted or unsubstituted divalent hydrocarbon group, and R3 represents a divalent linking group.) As a result, the present invention provides: a curable silicone composition which is capable of having a [2+2+2] cycloaddition reaction progress under mild conditions; and a silicone cured product of the curable silicone composition.
C08F 38/00 - Homopolymères ou copolymères de composés contenant une ou plusieurs liaisons triples carbone-carbone
C08F 4/80 - MétauxHydrures métalliquesComposés organiques de métalLeur utilisation comme précurseurs de catalyseurs choisis parmi les métaux non prévus dans le groupe choisis parmi les métaux du groupe du fer ou les métaux du groupe du platine
C08F 299/08 - Composés macromoléculaires obtenus par des interréactions de polymères impliquant uniquement des réactions entre des liaisons non saturées carbone-carbone, en l'absence de monomères non macromoléculaires à partir de polycondensats non saturés à partir de polysiloxanes
C08G 77/388 - Polysiloxanes modifiés par post-traitement chimique contenant des atomes autres que le carbone, l'hydrogène, l'oxygène ou le silicium contenant de l'azote
10.
METHOD FOR PRODUCING ONE-TERMINAL FUNCTIONAL ORGANOPOLYSILOXANE AND ONE-TERMINAL FUNCTIONAL ORGANOPOLYSILOXANE COMPOSITION
A method for producing a one-terminal functional organopolysiloxane represented by the following general formula (1) using a cyclopolysiloxane having 3 to 5 silicon atoms as a raw material, wherein R1 independently represents an alkyl or a phenyl group, and A represents a hydrogen atom or a group represented by the following general formula (2) or (3), wherein Y represents a single bond or a divalent organic group, and a broken line represents an attachment, wherein R represents a hydrogen atom or a methyl group, and Y and a broken line are same as above. The method including terminating a reaction at a time when a reaction conversion rate reaches 60 to 95%, the reaction conversion rate being determined using near-infrared spectrometry by analyzing a reaction liquid during the polymerization reaction.
A method for producing a one-terminal functional organopolysiloxane represented by the following general formula (1) using a cyclopolysiloxane having 3 to 5 silicon atoms as a raw material, wherein R1 independently represents an alkyl or a phenyl group, and A represents a hydrogen atom or a group represented by the following general formula (2) or (3), wherein Y represents a single bond or a divalent organic group, and a broken line represents an attachment, wherein R represents a hydrogen atom or a methyl group, and Y and a broken line are same as above. The method including terminating a reaction at a time when a reaction conversion rate reaches 60 to 95%, the reaction conversion rate being determined using near-infrared spectrometry by analyzing a reaction liquid during the polymerization reaction.
A thermally-conductive silicone composition containing:
(A) an organopolysiloxane having an alkenyl group bonded to at least two silicon atoms in one molecule;
(B) an organohydrogenpolysiloxane having a hydrogen atom bonded to at least two silicon atoms in one molecule, wherein the silicon atom-bonded hydrogen atom amount in component (B) is 0.1-5.0 per one alkenyl group in component (A);
(C) a thermally-conductive filler;
(D) a complex of a metal and a 8-quinolinol, and
(E) a platinum group metal catalyst.
A thermally-conductive silicone composition containing:
(A) an organopolysiloxane having an alkenyl group bonded to at least two silicon atoms in one molecule;
(B) an organohydrogenpolysiloxane having a hydrogen atom bonded to at least two silicon atoms in one molecule, wherein the silicon atom-bonded hydrogen atom amount in component (B) is 0.1-5.0 per one alkenyl group in component (A);
(C) a thermally-conductive filler;
(D) a complex of a metal and a 8-quinolinol, and
(E) a platinum group metal catalyst.
The thermally-conductive silicone composition provides a thermally-conductive silicone cured product enabling the suppression of the increase in hardness from an initial hardness during high temperature aging at 150° C.
This cosmetic contains at least one branched organopolysiloxane represented by
This cosmetic contains at least one branched organopolysiloxane represented by
(R13SiO1/2)a(R12SiO2/2)b(R1SiO3/2)c(SiO4/2)d
This cosmetic contains at least one branched organopolysiloxane represented by
(R13SiO1/2)a(R12SiO2/2)b(R1SiO3/2)c(SiO4/2)d
(In the formula, R1s are independently a hydrogen atom, a hydroxyl group, or a monovalent alkyl group having 1-3 carbon atoms; and two or more of R1s are monovalent alkyl groups having 2 or 3 carbon atoms.)
having a boiling point of 87-119° C. at 10 hPa. The branched organopolysiloxane provides a cosmetic which: has a light feel and good spreadability; has a uniform cosmetic film and high water repellency and can thus yield a uniform film, does not have a strong oily feeling; can provide a good feeling of use; and has excellent storage stability and long-lasting cosmetic properties (cosmetic retentivity) even when an oily component such as silicone and an organic ultraviolet absorber are mixed.
A method for producing Y2Ti2O5S2, including: placing sulfur, Y2O3, TiO2, Y2S3, and at least one flux selected from a halide of an alkali metal in a lower portion of a reaction vessel having an opening at an upper end; then vaporizing the sulfur and allowing the vaporized sulfur to react with Y2O3, TiO2, and Y2S3 to obtain Y2Ti2O5S2 by heating the lower portion of the reaction vessel in a state where the opening of the reaction vessel is held upward and closed while an upper portion of the reaction vessel is not heated; and liquefying the vaporized sulfur in the upper portion of the reaction vessel to allow the liquefied sulfur to fall down and again vaporizing the liquefied sulfur in the heated lower portion of the reaction vessel, in which liquefaction and vaporization are repeatedly carried out, and allowing the vaporized sulfur to react with Y2O3, TiO2, and Y2S3.
The present invention is a metal carbide coating material comprising a carbon base material (14) that has carbon as a main component and a metal carbide coating film that covers at least part of the carbon base material (14) and that has a metal carbide as a main component, said metal carbide coating material being characterized in that, in the thickness direction of the metal carbide coating film, between a film depth of 0% and a film depth of 80%, the carbon concentration in the metal carbide coating film increases as the film depth increases. The present invention makes it possible to provide a metal carbide coating material that enables an increase in the number of repeated uses.
The present invention is a thermally conductive addition-curable silicone composition characterized by containing (A) an organopolysiloxane having at least one aliphatic unsaturated hydrocarbon group per molecule and having a kinematic viscosity at 25°C of 60-100,000 mm2/s, (B) a thermally conductive filler containing amorphous aluminum nitride powder and amorphous zinc oxide powder, (C) an organohydrogenpolysiloxane having two or more hydrogen atoms bonded to silicon atoms per molecule, (D) a platinum group metal catalyst, (E) an organopolysiloxane represented by general formula (1), and (F) one or more addition curing reaction control agents selected from the group consisting of acetylene compounds, nitrogen compounds, organophosphorus compounds, oxime compounds, and organic chloro compounds. Provided thereby are: a thermally conductive addition-curable silicone composition that requires only a short time for the storage modulus G' to exceed the loss modulus G'' when heated and cured and has good storage stability at 25° C; and a method for producing the thermally conductive addition-curable silicone composition.
The present invention is a negative electrode active material that has negative electrode active material particles and is characterized in that: the negative electrode active material particles have a porous carbon structure; an amorphous low valence nano silicon oxide is dispersed on the interior of the porous carbon structure; the low valence nano silicon oxide contains SiOx (x < 1.0); and at least a portion of a surface layer part of the low valence nano silicon oxide exposed on the surface of the porous carbon structure is coated with at least one of a metal oxide and a metal hydroxide. Thus, a negative electrode active material capable of improving battery cycle characteristics and increasing capacity is provided.
Provided is a thermally conductive silicone composite sheet in which a high-hardness thermally conductive silicone layer and a low-hardness thermally conductive silicone layer are laminated so as to be in a favorable state of adhesion. The thermally conductive silicone composite sheet comprises a support layer (X), a high-hardness thermally conductive silicone rubber layer (Y), and a low-hardness thermally conductive silicone rubber layer (Z) laminated in this order. The support layer (X) is obtained by filling a mesh-like reinforcing material with a cured product of a thermally conductive composition. The high-hardness thermally conductive silicone rubber layer (Y) and the low-hardness thermally conductive silicone rubber layer (Z) are both a cured product of an addition-curable silicone rubber composition.
The present invention provides a transfer method for transferring a structure to a transfer destination, the transfer method comprising: preparing a release plate including a base material, a resin layer provided on the base material and having a transfer laser transmittance of 90% or more, and a structure held on the surface of the resin layer on the opposite side from the base material; causing the transfer laser to be incident on the base material from the surface of the base material on the opposite side from the resin layer; and causing the incident transfer laser to be transmitted through the base material and the resin layer and thermally decompose at least a portion of the resin layer at the interface where the structure and the resin layer are in contact, thereby transferring the structure from the release plate to the transfer destination. This makes it possible to provide a transfer method whereby a structure can be transferred to a transfer destination at high precision.
H01L 21/02 - Fabrication ou traitement des dispositifs à semi-conducteurs ou de leurs parties constitutives
G09F 9/00 - Dispositifs d'affichage d'information variable, dans lesquels l'information est formée sur un support, par sélection ou combinaison d'éléments individuels
G09F 9/33 - Dispositifs d'affichage d'information variable, dans lesquels l'information est formée sur un support, par sélection ou combinaison d'éléments individuels dans lesquels le ou les caractères désirés sont formés par une combinaison d'éléments individuels à semi-conducteurs, p. ex. à diodes
H01L 33/62 - Dispositions pour conduire le courant électrique vers le corps semi-conducteur ou depuis celui-ci, p.ex. grille de connexion, fil de connexion ou billes de soudure
19.
TRANSFER METHOD, TRANSFER UNIT, RELEASE PLATE, RELEASE PLATE PRECURSOR SUBSTRATE, METHOD FOR MANUFACTURING DISPLAY DEVICE, AND METHOD FOR MANUFACTURING MOUNTING BOARD
The present invention discloses a transfer method for transferring a structure to a transfer destination, the transfer method comprising: preparing a release plate that includes a base material, a resin layer provided on the base material, and a structure retained on the surface of the resin layer on the opposite side from the base material, in which the retained thickness of the portion of the resin layer located between the base material and the structure is a thickness for which a transfer laser has a transmittance of at least 50%; and transferring the structure from the release plate to a transfer destination by causing the transfer laser to be incident on the base material from the surface of the base material on the opposite side from the resin layer, with an energy density such that at least a portion of the resin layer remains on the base material. This provides a transfer method that allows for a reduction in residue originating from the resin layer (retention layer) on the structure after transfer.
H01L 21/02 - Fabrication ou traitement des dispositifs à semi-conducteurs ou de leurs parties constitutives
G09F 9/00 - Dispositifs d'affichage d'information variable, dans lesquels l'information est formée sur un support, par sélection ou combinaison d'éléments individuels
G09F 9/33 - Dispositifs d'affichage d'information variable, dans lesquels l'information est formée sur un support, par sélection ou combinaison d'éléments individuels dans lesquels le ou les caractères désirés sont formés par une combinaison d'éléments individuels à semi-conducteurs, p. ex. à diodes
H01L 33/62 - Dispositions pour conduire le courant électrique vers le corps semi-conducteur ou depuis celui-ci, p.ex. grille de connexion, fil de connexion ou billes de soudure
20.
NEGATIVE ELECTRODE ACTIVE MATERIAL AND METHOD FOR PRODUCING SAME
The present invention provides a negative electrode active material which has negative electrode active material particles, and which is characterized in that: the negative electrode active material particles each include a porous carbon structure; amorphous low valence nano silicon oxide is dispersed inside the porous carbon structure; the low valence nano silicon oxide contains SiOx (x < 1.0); and at least a part of the surface layer part of the low valence nano silicon oxide exposed in the surface of the porous carbon structure is coated with a condensation reaction product of at least one of an organopolysiloxane and a silicone oligomer, each of which has at least one of a silanol group and an alkoxy group that is directly bonded to a silicon atom. Consequently, the present invention provides a negative electrode active material with which an improvement in battery cycle characteristics and an increase in capacity can be achieved.
Provided is a glass cloth treatment liquid in which 0.05-2.0 mass % of a methacrylamide group-containing organosilicon compound represented by formula (1) is dissolved in water, wherein the content of a dimethacrylamide group-containing organosilicon compound represented by formula (2) is less than 1 mass part per 100 mass parts of the methacrylamide group-containing organosilicon compound represented by formula (1).
Provided is a glass cloth treatment liquid in which 0.05-2.0 mass % of a methacrylamide group-containing organosilicon compound represented by formula (1) is dissolved in water, wherein the content of a dimethacrylamide group-containing organosilicon compound represented by formula (2) is less than 1 mass part per 100 mass parts of the methacrylamide group-containing organosilicon compound represented by formula (1).
Provided is a glass cloth treatment liquid in which 0.05-2.0 mass % of a methacrylamide group-containing organosilicon compound represented by formula (1) is dissolved in water, wherein the content of a dimethacrylamide group-containing organosilicon compound represented by formula (2) is less than 1 mass part per 100 mass parts of the methacrylamide group-containing organosilicon compound represented by formula (1).
(In the formulae, R1 each independently represents a C1-C10 alkyl group or a C6-C10 aryl group, Me represents a methyl group, m1 and m2 represent an integer of 1-3, and n1 and n2 represent an integer of 1-12.)
D06M 13/513 - Composés avec au moins une liaison carbone-métal ou carbone-bore, carbone-silicium, carbone-sélénium ou carbone-tellure avec au moins une liaison carbone-silicium
H05K 1/03 - Emploi de matériaux pour réaliser le substrat
H05K 3/00 - Appareils ou procédés pour la fabrication de circuits imprimés
23.
ELECTRODE DEVICE AND MANUFACTURING METHOD THEREFOR
The present invention is an electrode device comprising a support that joins to and holds a graphite electrode used for arc discharge for manufacturing a quartz crucible, the electrode device being characterized by having an antifouling thin film on, from among the surfaces of the support, the outermost surface layer of the portion adjacent to the graphite electrode when the support is joined to the graphite electrode. As a result of this configuration, the present invention provides an electrode device with which it is possible to suppress contamination from a support, and to shorten the graphite electrode used and thereby reduce manufacturing costs.
Provided is a composition comprising a methacrylamide group-containing organic silicon compound represented by formula (1) and an organic silicon compound represented by formula (2).
Provided is a composition comprising a methacrylamide group-containing organic silicon compound represented by formula (1) and an organic silicon compound represented by formula (2).
Provided is a composition comprising a methacrylamide group-containing organic silicon compound represented by formula (1) and an organic silicon compound represented by formula (2).
(In the formulae, each R1 independently represents a C1-10 alkyl group or a C6-10 aryl group, R2 represents a methyl group or an ethyl group, Me represents a methyl group, m1 and m2 represent an integer of 1-3, and n1 and n2 represent an integer of 1-12.)
C08G 77/26 - Polysiloxanes contenant du silicium lié à des groupes organiques contenant des atomes autres que le carbone, l'hydrogène et l'oxygène groupes contenant de l'azote
C07F 7/18 - Composés comportant une ou plusieurs liaisons C—Si ainsi qu'une ou plusieurs liaisons C—O—Si
C09D 4/00 - Compositions de revêtement, p. ex. peintures, vernis ou vernis-laques, à base de composés non macromoléculaires organiques ayant au moins une liaison non saturée carbone-carbone polymérisable
C09D 183/08 - Polysiloxanes contenant du silicium lié à des groupes organiques contenant des atomes autres que le carbone, l'hydrogène et l'oxygène
25.
HYDROCARBON END GROUP-CONTAINING COMPOUND, CURABLE COMPOSITION FOR FORMING COATING FILM, CURED COATING FILM, AND ARTICLE
According to the present invention, by adding a hydrocarbon end group-containing compound which is represented by formula (1) and does not contain a fluorine atom in the structure to a thermosetting composition or a composition that is curable by an active energy ray such as an ultraviolet ray or an electron beam, excellent water repellency, antifouling properties and wear resistance can be imparted to a cured coating film produced from the composition. (X represents R1O- or R2R3N-, R1represents a monovalent hydrocarbon group having 20 to 80 carbon atoms, R2represents a monovalent hydrocarbon group having 10 to 40 carbon atoms, R3represents H or R2, the total number of carbon atoms in R2and R3is 20 to 80, Y represents a single bond or the following group *-C(=O)-***-C(=O)-O-***-C(=O)-NR4-***-C(=S)-NR4-**(wherein * denotes an atomic bond with X, ** denotes an atomic bond with Z, and R4 represents H or a monovalent hydrocarbon group), Z represents a single bond or a hydrocarbon group which has a valence of 2 to 4 and may contain O, S, N, and Si, V represents a polymerizable carbon-carbon double bond-containing monovalent hydrocarbon group which may contain O and N, and m represents a number of 1 to 3.)
C07C 233/09 - Amides d'acides carboxyliques ayant des atomes de carbone de groupes carboxamide liés à des atomes d'hydrogène ou à des atomes de carbone acycliques ayant les atomes d'azote des groupes carboxamide liés à des atomes d'hydrogène ou à des atomes de carbone de radicaux hydrocarbonés non substitués avec des atomes de carbone de groupes carboxamide liés à des atomes de carbone d'un squelette carboné acyclique non saturé
C07C 271/16 - Esters des acides carbamiques ayant des atomes d'oxygène de groupes carbamate liés à des atomes de carbone acycliques avec les atomes d'azote des groupes carbamate liés à des atomes d'hydrogène ou à des atomes de carbone acycliques à des atomes de carbone de radicaux hydrocarbonés substitués par des atomes d'oxygène liés par des liaisons simples
C07C 275/10 - Dérivés d'urée, c.-à-d. composés contenant l'un des groupes les atomes d'azote ne faisant pas partie de groupes nitro ou nitroso ayant des atomes d'azote de groupes urée liés à des atomes de carbone acycliques d'un squelette carboné acyclique et saturé étant substitué de plus par des atomes d'oxygène liés par des liaisons simples
C09K 3/18 - Substances non couvertes ailleurs à appliquer sur des surfaces pour y minimiser l'adhérence de la glace, du brouillard ou de l'eauSubstances antigel ou provoquant le dégel pour application sur des surfaces
26.
DISPERSING AGENT, DISPERSION AND INK COMPOSITIONS, AND METHODS FOR PRODUCING SAME
The present invention provides: a dispersing agent characterized by including a copolymer which is (A) a copolymer based on styrene-ethyleneoxy-group-containing (meth)acrylic acid and having a weight-average molecular weight of 1,000-50,000 and has (a1) a styrene content of 1-40 mass%, and by having a surfactant content less than 0.1 mass%; dispersion and ink compositions; and methods for producing the dispersing agent, the dispersion and the ink compositions. Even when added in a small amount, the present invention can disperse dispersing dyes and pigments and can also sufficiently exhibit wetting properties and re-dispersing properties.
Provided is a coating composition including (i) an organopolysiloxane composed of the ratio of units represented in formula (1): (R131/2aa(R22bb(R313/2c2dd(OR4ee (where R1-R3represent alkyl groups or the like that may be substituted with a hydrogen atom, one or more hydroxy groups, or the like, and that may have an ether bond, with at least a portion of the same being an alkyl group or the like that is substituted with a hydroxy group and that may have an ether bond, R4 represents a hydrogen atom or an alkyl group, and a is 0-0.5, b is 0-0.5, c is 0.2-1.0, d is 0-0.5, e is 0-3.0, and a+b+c+d=1 is satisfied), and (ii) an inorganic filler.
The present invention is a thermosetting silicone composition characterized by containing the following components (A)-(D): (A) an organopolysiloxane having an average constituent unit ratio represented by formula (1), (R131/2aa(R23-n3-nR3n1/2bb(R122/2cc(R13/2d4/2ee …(1), (B) an organic peroxide, (C) an organohydrogenpolysiloxane having two or more hydrogen atoms bonded to silicon atoms per molecule, and (D) a platinum group metal catalyst. As a result, provided are: a thermosetting silicone composition that provides a cured product having excellent hardness and die shear strength; a die bonding material comprising said composition; and an optical semiconductor device in which an optical semiconductor element is die-bonded with a cured product of said die bonding material.
C08L 83/05 - Polysiloxanes contenant du silicium lié à l'hydrogène
C09J 11/06 - Additifs non macromoléculaires organiques
C09J 183/05 - Polysiloxanes contenant du silicium lié à l'hydrogène
C09J 183/07 - Polysiloxanes contenant du silicium lié à des groupes aliphatiques non saturés
H01L 21/52 - Montage des corps semi-conducteurs dans les conteneurs
29.
MOLDED PRODUCT CONTAINING INORGANIC PARTICLES AND WATER SOLUBLE POLYSILOXANE COMPOUND HAVING AMINO GROUP, METHOD FOR PRODUCING SAME, AND INORGANIC PARTICLE DISPERSION LIQUID
This molded product (not comprising an organic titanate or an organic zirconate) comprising inorganic particles and a water soluble polysiloxane compound which has an amino group and which is represented by formula (1) makes it possible to reducing a storage volume and can be redispersed in a dispersion medium to be used in the form of a dispersion liquid. [R1represents a hydrogen atom, a C1-20 substituted or unsubstituted monovalent hydrocarbon group, or a monovalent hydrocarbon group which has a carboxy group represented by general formula (2) below (where R3, R4, and R5each independently represent a hydrogen atom or a C1-20 substituted or unsubstituted monovalent hydrocarbon group, and a represents 0 or 1), R2 represents a C1-20 substituted or unsubstituted monovalent hydrocarbon group, m is 0 or a positive number less than 3, n is 0 or 1, and n+m is 0 or a positive number less than 3.]
This solid water-soluble polysiloxane compound having an amino acid-containing group and represented by general formula (1) has a solid form, and therefore can be reduced in cost for storage and transportation, and can be easily re-dissolved to prepare a solution upon use. (In the formula, R1, R2, and R3each independently represent a hydrogen atom or a substituted or unsubstituted monovalent hydrocarbon group having 1 to 20 carbon atoms; R4 represents a substituted or unsubstituted monovalent hydrocarbon group having 1 to 20 carbon atoms; a is 0 or 1; m is 0 or a positive number less than 3; n is 0 or 1; and n + m is 0 or a positive number less than 3.)
C07F 7/10 - Composés comportant une ou plusieurs liaisons C—Si azotés
C08G 77/26 - Polysiloxanes contenant du silicium lié à des groupes organiques contenant des atomes autres que le carbone, l'hydrogène et l'oxygène groupes contenant de l'azote
31.
NEGATIVE ELECTRODE ACTIVE MATERIAL AND METHOD FOR MANUFACTURING SAME
The present invention provides a negative electrode active material that has negative electrode active material particles, the negative electrode active material being characterized in that: the negative electrode active material particles include a structure of porous carbon; amorphous low-valence nano silicon oxide is dispersed inside the structure of the porous carbon; and, when the negative electrode active material particles are measured by solid29 Si-CP/MAS-NMR, the maximum value is within the range of −81 to −95 ppm. Due to this configuration, it is possible to provide a negative electrode active material that can increase capacity while maintaining battery characteristics.
H01M 4/48 - Emploi de substances spécifiées comme matériaux actifs, masses actives, liquides actifs d'oxydes ou d'hydroxydes inorganiques
C01B 32/05 - Préparation ou purification du carbone non couvertes par les groupes , , ,
C01B 33/029 - Préparation par décomposition ou réduction de composés de silicium gazeux ou vaporisés autres que la silice ou un matériau contenant de la silice par décomposition de monosilane
A thermal conductive addition-curable silicone composition includes: an organopolysiloxane (A) having at least one aliphatic unsaturated hydrocarbon group in one molecule and having a kinematic viscosity at 25° C. of 60 to 100,000 mm2/s; a phenol compound (B) at an amount of 0.01 to 10 mass % relative to an entirety of the composition; a silver powder (C) at an amount of 10 to 98 mass % relative to the entirety of the composition; an organohydrogenpolysiloxane (D) having two or more hydrogen atoms bonded to a silicon atom in one molecule at an effective amount sufficient for the composition to form a cured product; and a platinum-group metal catalyst (E) at an effective amount. This configuration provides a thermal conductive addition-curable silicone composition having excellent heat-dissipating ability.
C08K 5/5425 - Composés contenant du silicium contenant de l'oxygène contenant au moins une liaison C=C
C09J 5/06 - Procédés de collage en généralProcédés de collage non prévus ailleurs, p. ex. relatifs aux amorces comprenant un chauffage de l'adhésif appliqué
C09J 9/00 - Adhésifs caractérisés par leur nature physique ou par les effets produits, p. ex. bâtons de colle
C09J 11/04 - Additifs non macromoléculaires inorganiques
C09J 11/06 - Additifs non macromoléculaires organiques
Provided is a hydroxyl group-containing organosilicon compound represented by general formula (1).
Provided is a hydroxyl group-containing organosilicon compound represented by general formula (1).
(R13SiO1/2)k(R12SiO2/2)p(R1SiO3/2)q(SiO4/2)r (1)
Provided is a hydroxyl group-containing organosilicon compound represented by general formula (1).
(R13SiO1/2)k(R12SiO2/2)p(R1SiO3/2)q(SiO4/2)r (1)
[In formula (1), R1 is a group selected from a monovalent hydrocarbon group and a group represented by formula (2), provided that at least one of all R1 groups is a group represented by formula (2). k>0, p≥0, q≥0 and r≥0, provided that k+p+q≥2.]
Provided is a hydroxyl group-containing organosilicon compound represented by general formula (1).
(R13SiO1/2)k(R12SiO2/2)p(R1SiO3/2)q(SiO4/2)r (1)
[In formula (1), R1 is a group selected from a monovalent hydrocarbon group and a group represented by formula (2), provided that at least one of all R1 groups is a group represented by formula (2). k>0, p≥0, q≥0 and r≥0, provided that k+p+q≥2.]
Provided is a hydroxyl group-containing organosilicon compound represented by general formula (1).
(R13SiO1/2)k(R12SiO2/2)p(R1SiO3/2)q(SiO4/2)r (1)
[In formula (1), R1 is a group selected from a monovalent hydrocarbon group and a group represented by formula (2), provided that at least one of all R1 groups is a group represented by formula (2). k>0, p≥0, q≥0 and r≥0, provided that k+p+q≥2.]
(In formula (2), R2 is a hydrogen atom or a group selected from a monovalent hydrocarbon group and an alkoxy group, and R3 is a hydrogen atom or a methyl group. s is an integer of 0-4, t is an integer of 2-4 and u is a numerical value of 1-3. The broken line represents a bond.)
A reflective mask blank including a substrate, a multilayer reflection film that is formed on one main surface of the substrate and reflects exposure light is provided. The multilayer reflection film has a periodically laminated structure in which repeating units are multiply stacked, the repeating unit includes one each of a high refractive index layer, a low refractive index layer, and a medium refractive index layer having a refractive index lower than a refractive index of the high refractive index layer and higher than a refractive index of the low refractive index layer, and in the repeating unit, the high refractive index layer and the medium refractive index layer are disposed at the substrate side and the side remote from the substrate, respectively, with respect to the low refractive index layer.
A polymer is defined as comprising repeat units having a cyclic acetal structure fused to an aromatic ring and repeat units derived from an onium salt compound containing a fluorosulfonic acid anion having a polymerizable group and an iodized aromatic ring structure. A chemically amplified resist composition comprising the polymer has advantages including high sensitivity, high contrast, improved lithography properties, e.g., EL, LWR, CDU and DOF, collapse resistance during fine pattern formation, and etch resistance after development.
C08F 220/04 - AcidesLeurs sels métalliques ou leurs sels d'ammonium
C08F 220/30 - Esters contenant de l'oxygène en plus de l'oxygène de la fonction carboxyle contenant des cycles aromatiques dans la partie alcool
C08F 234/02 - Copolymères de composés cycliques ne contenant pas de radicaux aliphatiques non saturés dans une chaîne latérale et contenant une ou plusieurs liaisons doubles carbone-carbone dans un hétérocycle dans un cycle contenant de l'oxygène
G03F 7/00 - Production par voie photomécanique, p. ex. photolithographique, de surfaces texturées, p. ex. surfaces impriméesMatériaux à cet effet, p. ex. comportant des photoréservesAppareillages spécialement adaptés à cet effet
36.
TWO-COMPONENT THERMALLY-CONDUCTIVE ADDITION-CURABLE SILICONE COMPOSITION AND CURED PRODUCT THEREOF
A two-component thermally-conductive addition-curable silicone constituted of a first component and a second component, wherein, the first component contains:
(A) an organopolysiloxane having an alkenyl group bonded to a silicon atom,
(C) a thermally-conductive filler, and
(E) a platinum group metal catalyst; and
the second component contains:
(A) an organopolysiloxane having an alkenyl group bonded to a silicon atom,
(B) an organohydrogenpolysiloxane, and
(C) a thermally-conductive filler.
A two-component thermally-conductive addition-curable silicone constituted of a first component and a second component, wherein, the first component contains:
(A) an organopolysiloxane having an alkenyl group bonded to a silicon atom,
(C) a thermally-conductive filler, and
(E) a platinum group metal catalyst; and
the second component contains:
(A) an organopolysiloxane having an alkenyl group bonded to a silicon atom,
(B) an organohydrogenpolysiloxane, and
(C) a thermally-conductive filler.
The first component does not contain component (B),
the second component does not contain component (E) and
one or both of the first and second components contains (D) a complex of a metal and a 8-quinolinol.
A rare earth composite oxide particles is prepared by a method including the steps of (A) producing particles of rare earth composite compound by heating an aqueous solution that contains ions of at least one kind of rare earth element selected from the group consisting of Sc, Y, Nd, Gd, Tb, Dy, Ho, Er, Tm, Yb, and Lu, either or both of Al ions and Ga ions, an organic compound having a carboxy group, and urea at not less than 80° C. and not more than a boiling point of the aqueous solution to react the organic compound, a hydrolyzed product of the urea, the ions of the rare earth element, and the either or both of Al ions and Ga ions, and (B) producing rare earth composite oxide from the rare earth composite compound.
A positive resist composition is provided comprising a polymer comprising an aromatic hydroxy acid having a carboxy group and a phenolic hydroxy group which are both substituted with an acid labile group having an aromatic group-containing cyclic acetal structure. It exhibits a high sensitivity and resolution and forms a pattern of satisfactory profile with reduced LWR or improved CDU.
The positive resist composition comprises a base polymer comprising repeat units (a) having a sulfonium salt structure of an iodized phenol compound. The positive resist composition comprising a base polymer comprising repeat units having a sulfonium salt structure of an iodized phenol exhibits a high sensitivity and resolution, and forms a pattern of satisfactory profile with reduced edge roughness and dimensional variation.
G03F 7/039 - Composés macromoléculaires photodégradables, p. ex. réserves positives sensibles aux électrons
G03F 7/00 - Production par voie photomécanique, p. ex. photolithographique, de surfaces texturées, p. ex. surfaces impriméesMatériaux à cet effet, p. ex. comportant des photoréservesAppareillages spécialement adaptés à cet effet
The present invention is a patterning process including the steps of: providing an organic underlayer film, a silicon-containing hard mask, a silicon-containing antireflective film, and a photoresist film in this order on a substrate to be processed; forming a resist pattern in the photoresist film; forming a hard mask middle layer film pattern; forming an organic underlayer film pattern; and forming a pattern in the substrate to be processed, where the silicon-containing antireflective film is formed using a composition for forming a silicon-containing antireflective film containing a crosslinking agent and a polysiloxane containing any one or more of a repeating unit represented by the following general formula (Sx-1), a repeating unit represented by the following general formula (Sx-2), and a partial structure represented by the following general formula (Sx-3). This provides a patterning process according to which it is possible to form a fine pattern without edge roughness.
The present invention is a patterning process including the steps of: providing an organic underlayer film, a silicon-containing hard mask, a silicon-containing antireflective film, and a photoresist film in this order on a substrate to be processed; forming a resist pattern in the photoresist film; forming a hard mask middle layer film pattern; forming an organic underlayer film pattern; and forming a pattern in the substrate to be processed, where the silicon-containing antireflective film is formed using a composition for forming a silicon-containing antireflective film containing a crosslinking agent and a polysiloxane containing any one or more of a repeating unit represented by the following general formula (Sx-1), a repeating unit represented by the following general formula (Sx-2), and a partial structure represented by the following general formula (Sx-3). This provides a patterning process according to which it is possible to form a fine pattern without edge roughness.
A method for efficiently producing a heteroepitaxial film in a thin film shape while minimizing damage to a device and material loss, including heteroepitaxial growing a 3C—SiC single crystal film on a single crystal Si substrate and then delaminating thereof, the method includes: with using a reduced-pressure CVD apparatus, removing a native oxide film on a surface of the single crystal Si substrate by hydrogen baking, performing nucleation of SiC at 1333 Pa or lower and 300° C. or higher and 950° C. or lower and forming the 3C—SiC single crystal film and forming a vacancy directly under the 3C—SiC single crystal film at 1333 Pa or lower and 800° C. or higher and lower than 1200° C., while supplying a source gas containing carbon and silicon; and producing the heteroepitaxial film by delaminating the 3C—SiC single crystal film along the vacancy.
The present invention provides a method for manufacturing a bonded semiconductor wafer, the method includes the steps of epitaxially growing an etching stop layer on a starting substrate, epitaxially growing a compound semiconductor functional layer on the etching stop layer, forming an isolation groove for forming a device in the compound semiconductor functional layer by a dry etching method, etching on a surface of the isolation groove by a wet etching method, bonding a visible light-transmissive substrate of a different material from a material of the compound semiconductor functional layer to the compound semiconductor functional layer via a visible light-transmissive thermosetting bonding member, and obtaining a bonded semiconductor wafer by removing the starting substrate from the compound semiconductor functional layer bonded to the visible light-transmissive substrate. This can provide a method for manufacturing a bonded semiconductor wafer that can make a device with suppressed generation of decrease in brightness when the device is produced on a substrate.
The present invention provides an insulating heat transfer sheet which is characterized by being a cured product of a thermally conductive silicone resin composition that contains the components (A) to (D) described below, the insulating heat transfer sheet being characterized in that the peak intensity ratio (degree of orientation) in a thickness direction as detected by X-ray diffraction method of the insulating heat transfer sheet is [2θ = 41 to 43°]/[2θ = 25 to 27°] = 1 or more: (A) an organopolysiloxane which has two or more alkenyl groups in each molecule, the alkenyl groups being each bonded to a silicon atom, (B) an organohydrogenpolysiloxane which contains a component (B1) and a component (B2), and has two or more hydrosilyl groups in each molecule, (C) a hydrosilylation catalyst, (D) a flat boron nitride which has an average particle diameter of 30 to 100 μm and an aspect ratio of 20 to 100 as measured by a laser diffraction method. Consequently, the present invention provides an insulating heat transfer sheet which has high sheet strength while having excellent thermal conductivity in the thickness direction.
The present invention is a light guide member for use in a waveguide structure for an image display device that guides image light entering from a display and emits the image light toward the eyes of a user, and the present invention is characterized in that light guide member is formed from a single crystal composed of lithium niobate. According to the present invention, it is possible to provide a light guide member having a high refractive index and a high internal transmittance.
G02B 6/00 - Guides de lumièreDétails de structure de dispositions comprenant des guides de lumière et d'autres éléments optiques, p. ex. des moyens de couplage
Provided is a siloxane-modified polyurethane composition that contains:
(A) a hydroxyl group-containing organosilicon compound represented by formula (1).
Provided is a siloxane-modified polyurethane composition that contains:
(A) a hydroxyl group-containing organosilicon compound represented by formula (1).
(R13SiO1/2)k(R12SiO2/2)p(R1SiO3/2)q(SiO4/2)r (1)
Provided is a siloxane-modified polyurethane composition that contains:
(A) a hydroxyl group-containing organosilicon compound represented by formula (1).
(R13SiO1/2)k(R12SiO2/2)p(R1SiO3/2)q(SiO4/2)r (1)
[wherein: R1 is a monovalent hydrocarbon group, etc., provided that at least one of all R1 groups is a group represented by formula (2); and k>0, p≥0, q≥0 and r≥0, provided that k+p+q≥2.]
Provided is a siloxane-modified polyurethane composition that contains:
(A) a hydroxyl group-containing organosilicon compound represented by formula (1).
(R13SiO1/2)k(R12SiO2/2)p(R1SiO3/2)q(SiO4/2)r (1)
[wherein: R1 is a monovalent hydrocarbon group, etc., provided that at least one of all R1 groups is a group represented by formula (2); and k>0, p≥0, q≥0 and r≥0, provided that k+p+q≥2.]
Provided is a siloxane-modified polyurethane composition that contains:
(A) a hydroxyl group-containing organosilicon compound represented by formula (1).
(R13SiO1/2)k(R12SiO2/2)p(R1SiO3/2)q(SiO4/2)r (1)
[wherein: R1 is a monovalent hydrocarbon group, etc., provided that at least one of all R1 groups is a group represented by formula (2); and k>0, p≥0, q≥0 and r≥0, provided that k+p+q≥2.]
(R2 is a hydrogen atom, etc., and R3 is a hydrogen atom or a methyl group; s is an integer of 0-4, t is an integer of 2-4 and u is a numerical value of 1-3; and the broken line represents a bond);
(B) an isocyanate compound having two or more isocyanate groups per molecule; and
(C) an organic compound having two or more functional groups capable of reacting with isocyanate groups per molecule.
The resist composition comprises a sulfonium salt of an iodized phenol compound. The resist composition which comprises a sulfonium salt of an iodized phenol compound can exhibit a high sensitivity and forms a pattern with reduced LWR or improved CDU independent of whether it is of positive or negative type.
G03F 7/027 - Composés photopolymérisables non macromoléculaires contenant des doubles liaisons carbone-carbone, p. ex. composés éthyléniques
G03F 7/00 - Production par voie photomécanique, p. ex. photolithographique, de surfaces texturées, p. ex. surfaces impriméesMatériaux à cet effet, p. ex. comportant des photoréservesAppareillages spécialement adaptés à cet effet
In a carbon black dispersed composition comprising carbon black, methyl cellulose, and N-methyl-2-pyrrolidone, the methyl cellulose has a polydispersity index of up to 1.9 based on absolute molecular weight measurement by SEC-MALS and a 2 wt % aqueous solution viscosity of 3 to 30 mPa·s at 20° C. The composition having carbon black uniformly dispersed and maintaining the initial dispersion state, i.e., having storage stability is obtained without excessive labor and/or time.
H01M 4/62 - Emploi de substances spécifiées inactives comme ingrédients pour les masses actives, p. ex. liants, charges
H01M 10/0525 - Batteries du type "rocking chair" ou "fauteuil à bascule", p. ex. batteries à insertion ou intercalation de lithium dans les deux électrodesBatteries à l'ion lithium
48.
ULTRAVIOLET-CURABLE SILICONE GEL COMPOSITION, AND SILICONE GEL CURED PRODUCT OBTAINED BY CURING SAID COMPOSITION
The present invention pertains to an ultraviolet-curable silicone gel composition containing components (A)-(D): (A) 5-95 parts by mass of an organopolysiloxane compound having two or more alkenyl groups per molecule; (B) 5-95 parts by mass of an organopolysiloxane compound represented by average formula (1) (R111R221/2aa(R231/22-a2-a(R22bb; (C) an organohydrogen polysiloxane having three or more hydrosilyl groups per molecule; and (D) a hydrosilylation reaction catalyst in a catalytic amount. Thus, the present invention provides: an ultraviolet-curable silicone gel composition which, after being cured, has excellent heat resistance, etc., exhibits a stable loss coefficient tanδ in a wide frequency range, and can be suitably used for improving the reliability of vibration-damping performance; a silicone gel cured product obtained by curing the composition; and a vibration-damping material using the cured product.
C08L 83/07 - Polysiloxanes contenant du silicium lié à des groupes aliphatiques non saturés
C08L 83/05 - Polysiloxanes contenant du silicium lié à l'hydrogène
F16F 15/02 - Suppression des vibrations dans les systèmes non rotatifs, p. ex. dans des systèmes alternatifsSuppression des vibrations dans les systèmes rotatifs par l'utilisation d'organes ne se déplaçant pas avec le système rotatif
49.
GEL COMPOSITION, MEMBER, ELECTRONIC ELEMENT, ELECTRONIC DEVICE, AND METHOD FOR PRODUCING GEL COMPOSITION
[Solution] Provided is a gel composition which contains a vinyl chloride-based resin and a plasticizer and which exhibits a gel state at 20°C. The plasticizer is at least one selected from the group consisting of isophthalic acid esters, terephthalic acid esters, fumaric acid esters, acetylricinoleic acid esters, citric acid esters, acetylcitric acid esters, adipic acid esters selected from di-2-ethylhexyl adipate (DOA) and diisononyl adipate (DINA), maleic acid esters and derivatives thereof and salts thereof. Also provided is an electronic element comprising a first electrode, a second electrode, and a polymer layer which is disposed between the first electrode and the second electrode and which contains the gel composition.
A thermal conductive stacked insulative substrate including: an elastic layer; and a thermal conductive ceramics insulative substrate, wherein the elastic layer is directly stacked on a surface of the thermal conductive ceramics insulative substrate. The thermal conductive stacked insulative substrate has a small thermal resistivity and excellent thermal conductivity.
C09K 5/14 - Substances solides, p. ex. pulvérulentes ou granuleuses
C04B 35/10 - Produits céramiques mis en forme, caractérisés par leur compositionCompositions céramiquesTraitement de poudres de composés inorganiques préalablement à la fabrication de produits céramiques à base d'oxydes à base d'oxyde d'aluminium
C04B 35/581 - Produits céramiques mis en forme, caractérisés par leur compositionCompositions céramiquesTraitement de poudres de composés inorganiques préalablement à la fabrication de produits céramiques à base de non oxydes à base de borures, nitrures ou siliciures à base de nitrure d'aluminium
C04B 35/584 - Produits céramiques mis en forme, caractérisés par leur compositionCompositions céramiquesTraitement de poudres de composés inorganiques préalablement à la fabrication de produits céramiques à base de non oxydes à base de borures, nitrures ou siliciures à base de nitrure de silicium
A thermally conductive sheet containing a thermally conductive filler (B) that contains at least one of carbon and boron nitride in a polymer matrix (A), wherein the thermally conductive sheet has a thermal conductivity in a thickness direction of 15 W/m·K or more and a degree of orientation in which a long axis direction of the thermally conductive filler is oriented in a thickness direction of the thermally conductive sheet is 1.0 or more. This makes the filler highly oriented, and thus it is possible to provide a thermally conductive sheet that has excellent thermal conductivity in a thickness direction and low specific gravity.
A resist composition is provided comprising a bis-onium salt consisting of a divalent anion having a sulfonic acid anion structure directly bonded to an iodized aromatic group and a carboxylic acid anion structure bonded to the aromatic group directly or via a linking group, and onium cations. It exhibits a high sensitivity and forms a pattern with reduced LWR or improved CDU independent of whether it is of positive or negative type.
G03F 7/00 - Production par voie photomécanique, p. ex. photolithographique, de surfaces texturées, p. ex. surfaces impriméesMatériaux à cet effet, p. ex. comportant des photoréservesAppareillages spécialement adaptés à cet effet
G03F 7/038 - Composés macromoléculaires rendus insolubles ou sélectivement mouillables
G03F 7/039 - Composés macromoléculaires photodégradables, p. ex. réserves positives sensibles aux électrons
G03F 7/16 - Procédés de couchageAppareillages à cet effet
A resist composition is provided comprising a bis-onium salt consisting of a divalent anion having a sulfonic acid anion structure directly bonded to an iodized aromatic group and a sulfonimide or sulfonamide anion structure bonded to the aromatic group directly or via a linking group, and onium cations. It exhibits a high sensitivity and forms a pattern with reduced LWR or improved CDU independent of whether it is of positive or negative type.
C08K 5/45 - Composés hétérocycliques comportant du soufre dans le cycle
G03F 7/00 - Production par voie photomécanique, p. ex. photolithographique, de surfaces texturées, p. ex. surfaces impriméesMatériaux à cet effet, p. ex. comportant des photoréservesAppareillages spécialement adaptés à cet effet
G03F 7/038 - Composés macromoléculaires rendus insolubles ou sélectivement mouillables
G03F 7/039 - Composés macromoléculaires photodégradables, p. ex. réserves positives sensibles aux électrons
G03F 7/16 - Procédés de couchageAppareillages à cet effet
54.
SUBSTRATE FOR HIGH-FREQUENCY DEVICE, AND METHOD FOR PRODUCING SAME
A substrate for a high-frequency device including a support substrate having unevenness on a surface thereof, a diamond layer on the surface of the support substrate, and a silicon oxide film layer on the diamond layer. Thereby, the substrate for a high-frequency device using diamond having excellent high-frequency characteristics and a method for producing a substrate for a high-frequency device using diamond having excellent high-frequency characteristics are provided.
G01B 11/30 - Dispositions pour la mesure caractérisées par l'utilisation de techniques optiques pour mesurer la rugosité ou l'irrégularité des surfaces
55.
ADDITION CURING TYPE LIQUID SILICONE RUBBER COMPOSITION FOR AIRBAG, AND AIRBAG
The present invention is an addition curing-type liquid silicone rubber composition for an airbag, which is characterized by containing components (A) to (G) as essential components. Component (A): an organopolysiloxane which has two or more silicon atom-bonded alkenyl groups per molecule and has a degree of polymerization of 50-2000; component (B): a powdered three-dimensional mesh-like organopolysiloxane resin; component (C): an organohydrogenpolysiloxane having two or more hydrosilyl groups per molecule; component (D): 1-50 parts by mass of a silica fine powder having a BET specific surface area of 50 m2/g or more; component (E): a hydrosilylation reaction catalyst; component (F): an organosilicon compound which has one or more functional groups selected from among an epoxy group, an isocyanate group, a (meth)acrylic group and an isocyanurate ring-containing organic group and one or more functional groups selected from among a hydrosilyl group, an alkoxysilyl group, a hydroxysilyl group and a vinyl group per molecule; and component (G) an organic compound which has one or more epoxy groups per molecule and does not have a hydrosilyl group or an alkoxysilyl group. Due to this configuration, provided are: an addition curing-type liquid silicone rubber composition for an airbag, the composition exhibiting excellent flame retardancy; and an airbag having a cured film obtained using said composition.
D06M 15/643 - Composés macromoléculaires obtenus par des réactions autres que celles faisant intervenir uniquement des liaisons non saturées carbone-carbone contenant du silicium dans la chaîne principale
B60R 21/235 - Éléments gonflables caractérisés par leur matériau
RAW MATERIAL ALLOY FOR MAGNETIC REFRIGERATION MATERIAL AND METHOD FOR MANUFACTURING SAME, AND MAGNETIC REFRIGERATION MATERIAL AND METHOD FOR MANUFACTURING SAME
(1-a)a(1-b-c-d)bcdz5361132171313 phase. A magnetic refrigeration material according to the present invention is obtained by hydrogenation heat treatment of the raw material alloy for the magnetic refrigeration material according to the present invention. According to the present invention, it is possible to provide: a raw material alloy for a magnetic refrigeration material, which makes it possible to control the hydrogen storage amount and to homogenize the hydrogen concentration distribution under a wider range of hydrogenation conditions than in the conventional art; a method for producing the raw material alloy for the magnetic refrigeration material; a magnetic refrigeration material having a high ΔS and a controlled transition temperature; and a method for producing the magnetic refrigeration material.
H01F 1/01 - Aimants ou corps magnétiques, caractérisés par les matériaux magnétiques appropriésEmploi de matériaux spécifiés pour leurs propriétés magnétiques en matériaux inorganiques
C21D 6/00 - Traitement thermique des alliages ferreux
C22C 38/00 - Alliages ferreux, p. ex. aciers alliés
57.
OPTICAL ISOLATOR AND LIGHT TRANSMISSION CIRCUIT MODULE
The present invention is an optical isolator (81) that has two or more optical paths and that is characterized by: comprising an isolator chip (3) in which one or more polarizers (4) and one or more Faraday rotators (5) are integrally joined to each other in each of the optical paths; the isolator chip (3) and a substrate being joined and fixed together; the substrate being a translucent substrate (2); and light passing through the optical paths being transmitted through the isolator chip (3) and the translucent substrate (2). Due to this configuration, the present invention provides an optical isolator which is inserted into a laser module having a plurality of optical paths, and in which an isolator chip is not disposed in a space other than a translucent section thus enabling the process of assembling the isolator chip to be simplified.
G02B 27/28 - Systèmes ou appareils optiques non prévus dans aucun des groupes , pour polariser
G02B 6/27 - Moyens de couplage optique avec des moyens de sélection et de réglage de la polarisation
G02F 1/09 - Dispositifs ou dispositions pour la commande de l'intensité, de la couleur, de la phase, de la polarisation ou de la direction de la lumière arrivant d'une source lumineuse indépendante, p. ex. commutation, ouverture de porte ou modulationOptique non linéaire pour la commande de l'intensité, de la phase, de la polarisation ou de la couleur basés sur des éléments magnéto-optiques, p. ex. produisant un effet Faraday
NATIONAL UNIVERSITY CORPORATION SAITAMA UNIVERSITY (Japon)
Inventeur(s)
Ikeno Junichi
Yamada Yohei
Suzuki Hideki
Matsuo Rika
Noguchi Hitoshi
Abrégé
The present invention makes it possible to form a modified layer at any desired angle with the {001} plane of a main surface of single-crystal diamond. This method for processing diamond comprises: placing a laser condensing part 119 for condensing laser light B to face the {001} plane of a main surface 10a of a substrate 10 made of single-crystal diamond; and condensing the laser light in an inner portion of the substrate 10 by means of the laser condensing part 119 to thereby form a modified layer which extends toward the main surface 10a of the substrate 10 at an angle with the {001} plane. The modified layer includes processing marks and cleavages of the {111} plane around the processing marks, the processing marks being formed by thermally decomposing and graphitizing the diamond by condensing the laser light B by means of the laser condensing part 119, and the modified layer is formed toward the main surface 10a of the substrate 10 along a plane having an angle with the {001} plane.
B23K 26/53 - Travail par transmission du faisceau laser à travers ou dans la pièce à travailler pour modifier ou reformer le matériau dans la pièce à travailler, p. ex. pour faire des fissures d'amorce de rupture
C30B 33/04 - Post-traitement des monocristaux ou des matériaux polycristallins homogènes de structure déterminée en utilisant des champs électriques ou magnétiques ou des rayonnements corpusculaires
H01L 21/02 - Fabrication ou traitement des dispositifs à semi-conducteurs ou de leurs parties constitutives
59.
UNDERLYING SUBSTRATE, SINGLE CRYSTAL DIAMOND LAMINATE SUBSTRATE AND METHOD FOR PRODUCING THEM
An underlying substrate for a single crystal diamond laminate substrate includes an initial substrate being any of a single crystal Si {111} substrate and a single crystal α-Al2O3 {0001} substrate, etc., an intermediate layer on the initial substrate, in which an outermost surface on the initial substrate has no off angle, or has an off angle in a crystal axis <−1-12> direction relative to a cubic crystal plane orientation {111}, or has an off angle in a crystal axis <10-10> or <11-20> direction relative to a hexagonal crystal plane orientation {0001}, etc. Thereby, the underlying substrate is provided, in which the substrate is capable of forming a single crystal diamond layer having a large area (large diameter), high crystallinity, few hillocks, few abnormal growth particles, few dislocation defects, etc., high purity, low stress, and high quality, and applicable to an electronic and magnetic device.
C30B 30/04 - Production de monocristaux ou de matériaux polycristallins homogènes de structure déterminée, caractérisée par l'action de champs électriques ou magnétiques, de l'énergie ondulatoire ou d'autres conditions physiques spécifiques en utilisant des champs magnétiques
60.
PHOTOSENSITIVE RESIN COMPOSITION, PHOTOSENSITIVE RESIN FILM, PHOTOSENSITIVE DRY FILM, AND PATTERN-FORMING PROCESS
The present invention is a photosensitive resin composition including, (A) an acid-crosslinkable group-containing silicone resin, (B) an oxazoline compound or a derivative thereof, and (C) a photo-acid generator. This provides: a photosensitive resin composition that can easily form a thick and fine pattern without causing discoloration of copper and can form a resin film that is excellent in copper migration resistance, adhesiveness to a base material, and reliability; a photosensitive resin film; a photosensitive dry film; and a pattern-forming process by using these.
C04B 35/44 - Produits céramiques mis en forme, caractérisés par leur compositionCompositions céramiquesTraitement de poudres de composés inorganiques préalablement à la fabrication de produits céramiques à base d'oxydes à base d'aluminates
C04B 35/50 - Produits céramiques mis en forme, caractérisés par leur compositionCompositions céramiquesTraitement de poudres de composés inorganiques préalablement à la fabrication de produits céramiques à base de composés de terres rares
G02B 27/28 - Systèmes ou appareils optiques non prévus dans aucun des groupes , pour polariser
The present invention provides a composite powder and a cosmetic which have good usability at the time of application, attain a natural finish with transparency and suppressed gloss while correcting unevenness or the like of the skin, and impart an excellent effect in sustaining a cosmetic coating film.
A hydrophobic cellulose nanofiber including (A) a cellulose nanofiber and (B) isocyanate group-containing organopolysiloxane, wherein the isocyanate group-containing organopolysiloxane is bonded to a hydroxy group of the cellulose nanofiber through a urethane bond. By this, it is possible to provide hydrophobic cellulose nanofibers that can be dispersed in liquid oils at room temperature, especially in silicone oils, and a dispersion medium for the same.
An organopolysiloxane according to the present invention, having a structural unit ratio represented by formula (1), provides a room temperature-curable composition that has excellent curability and stability even when a solvent is not used, and that is capable of producing a cured product having high hardness and high transparency.
An organopolysiloxane according to the present invention, having a structural unit ratio represented by formula (1), provides a room temperature-curable composition that has excellent curability and stability even when a solvent is not used, and that is capable of producing a cured product having high hardness and high transparency.
An organopolysiloxane according to the present invention, having a structural unit ratio represented by formula (1), provides a room temperature-curable composition that has excellent curability and stability even when a solvent is not used, and that is capable of producing a cured product having high hardness and high transparency.
(R1 and R2 each represent an alkyl group having 1-12 carbon atoms or an aryl group having 6-10 carbon atoms; k represents an integer of 1-3; m represents a number of 5-100; n represents 2 or 3; R3, R4, and R5 each represent an alkyl group having 1-12 carbon atoms, an alkenyl group having 2-8 carbon atoms, an aryl group having 6-10 carbon atoms, an aralkyl group having 7-10 carbon atoms, an alkoxy group having 1-4 carbon atoms, or a hydroxy group; and a, b, c, d, e, and f each represent a number satisfying a>0, b>0, c≥0, d>0, e>0, and f≥0, as well as a+b+c+d+e+f=1.)
C08G 77/50 - Composés macromoléculaires obtenus par des réactions créant dans la chaîne principale de la macromolécule une liaison contenant du silicium, avec ou sans soufre, azote, oxygène ou carbone dans lesquels au moins deux atomes de silicium, mais pas la totalité, sont liés autrement que par des atomes d'oxygène par des liaisons au carbone
C08G 77/00 - Composés macromoléculaires obtenus par des réactions créant dans la chaîne principale de la macromolécule une liaison contenant du silicium, avec ou sans soufre, azote, oxygène ou carbone
C08G 77/08 - Procédés de préparation caractérisés par les catalyseurs utilisés
C08K 5/5425 - Composés contenant du silicium contenant de l'oxygène contenant au moins une liaison C=C
65.
Polymer, Positive And Negative Photosensitive Resin Compositions, Patterning Process, Method For Forming Cured Film, Interlayer Insulating Film, Surface Protective Film, And Electronic Component
The present invention is a polymer containing: a structural unit of general formula (1) and/or (2); and a structural unit of general formula (3) and/or (4), where X1 represents a tetravalent organic group, R1 to R4 each represent a monovalent organic group or a hydrogen atom, provided that at least one is a monovalent organic group, L represents a divalent organic group or a divalent atom, X2 represents a divalent organic group, X3 represents a tetravalent organic group, “s” represents 0 or 1, Z represents a divalent bonding group, and X4 represents a divalent organic group. This provides a polymer soluble in an aqueous alkaline solution and usable as a base resin for positive and negative photosensitive resin compositions which enable fine pattern formation, provide high resolution, and have excellent mechanical characteristics even when cured at low temperatures.
The present invention is a polymer containing: a structural unit of general formula (1) and/or (2); and a structural unit of general formula (3) and/or (4), where X1 represents a tetravalent organic group, R1 to R4 each represent a monovalent organic group or a hydrogen atom, provided that at least one is a monovalent organic group, L represents a divalent organic group or a divalent atom, X2 represents a divalent organic group, X3 represents a tetravalent organic group, “s” represents 0 or 1, Z represents a divalent bonding group, and X4 represents a divalent organic group. This provides a polymer soluble in an aqueous alkaline solution and usable as a base resin for positive and negative photosensitive resin compositions which enable fine pattern formation, provide high resolution, and have excellent mechanical characteristics even when cured at low temperatures.
G03F 7/038 - Composés macromoléculaires rendus insolubles ou sélectivement mouillables
C08G 73/10 - PolyimidesPolyester-imidesPolyamide-imidesPolyamide-acides ou précurseurs similaires de polyimides
G03F 7/00 - Production par voie photomécanique, p. ex. photolithographique, de surfaces texturées, p. ex. surfaces impriméesMatériaux à cet effet, p. ex. comportant des photoréservesAppareillages spécialement adaptés à cet effet
G03F 7/039 - Composés macromoléculaires photodégradables, p. ex. réserves positives sensibles aux électrons
G03F 7/16 - Procédés de couchageAppareillages à cet effet
H01L 21/027 - Fabrication de masques sur des corps semi-conducteurs pour traitement photolithographique ultérieur, non prévue dans le groupe ou
nnnnnnnnnnn is the relative permittivity of the respective layer at an intermediate frequency of the target communication frequency band, λ is the radio wave wavelength (mm) at the intermediate frequency, N is a natural number from 1 to 100, and n is the number of the respective layer.) (2): 0.5N–0.2≤d∙√ε/λ≤0.5N+0.2
E06B 3/66 - Blocs comprenant plusieurs panneaux de verre ou analogues qui sont espacés et fixés les uns aux autres de façon permanente, p. ex. le long des bords
H01Q 1/22 - SupportsMoyens de montage par association structurale avec d'autres équipements ou objets
H01Q 1/42 - Enveloppes non intimement mécaniquement associées avec les éléments rayonnants, p. ex. radome
NATIONAL INSTITUTE OF ADVANCED INDUSTRIAL SCIENCE AND TECHNOLOGY (Japon)
INSTITUTE OF SCIENCE TOKYO (Japon)
Inventeur(s)
Noguchi Hitoshi
Makino Toshiharu
Ogura Masahiko
Kato Hiromitsu
Haruyama Moriyoshi
Kajiyama Kenichi
Kainuma Yuta
Hatano Yuji
Iwasaki Takayuki
Hatano Mutsuko
Abrégé
The present invention provides a method for producing a diamond substrate by forming a diamond crystal on a base substrate by a CVD method, wherein in order to form an NVC-containing diamond crystal layer on at least a part of the diamond crystal, a starting material gas contains 0.005% to 7.000% by volume inclusive of a hydrocarbon gas, 85.000% by volume or more but less than 99.995% by volume of a hydrogen gas, and 5.0 × 10-5% to 8.000% by volume inclusive of a nitrogen gas or a nitride gas, and a 12C concentrated hydrocarbon gas which has a higher ratio of a 12C constituent hydrocarbon gas than a natural hydrocarbon gas is used as the hydrocarbon gas in the starting material gas. As a result, the present invention provides a method for producing a diamond substrate, with which it is possible to form a diamond crystal that has a high orientation in the NV axis (for example, high [111] orientation) and high-density nitrogen-vacancy centers (NVC) with a single spin by performing CVD on the base substrate under prescribed conditions.
C30B 25/20 - Croissance d'une couche épitaxiale caractérisée par le substrat le substrat étant dans le même matériau que la couche épitaxiale
H01L 21/205 - Dépôt de matériaux semi-conducteurs sur un substrat, p. ex. croissance épitaxiale en utilisant la réduction ou la décomposition d'un composé gazeux donnant un condensat solide, c.-à-d. un dépôt chimique
68.
COATING MATERIAL FOR PHOTOLITHOGRAPHY, RESIST COMPOSITION AND PATTERN FORMING PROCESS
The coating material for photolithography contains a surfactant having no perfluoroalkyl structure. The coating material for photolithography contains 0.0001 to 3 wt % of a surfactant made from a resin having an aromatic group substituted with a fluorine atom, a trifluoromethoxy group, a difluoromethoxy group, a trifluoromethylthio group, or a difluoromethylthio group.
A negative electrode active material contains negative electrode active material particles, in which the negative electrode active material particles contain silicon oxide particles coated with a carbon layer, and the carbon layer has a peak position attributed to a G band in a range of more than 1590 cm−1 and 1597 cm−1 or less in a Raman spectrum obtained from Raman spectrometry for at least a part of the carbon layer. This can provide the negative electrode active material capable of improving cycle characteristics when used as the negative electrode active material of a secondary battery.
A reflective photomask blank has a substrate 10; and a multilayer reflective film 50. The multilayer reflective film 50 has a periodic stacked structure in which a low refractive index layer 30 containing ruthenium (Ru), a high refractive index layer 20 containing silicon (Si), and a diffusion prevention layer 40. The diffusion prevention layer 40 is formed in contact with the low refractive index layer 30 on both or one of a side of the low refractive index layer 30 close to the substrate 10 and a side of the low refractive index layer 30 away from the substrate 10. The diffusion prevention layer 40 is one or more sublayers selected from a layer containing a silicon nitride (SiN), a layer containing silicon carbide (Sic), a layer containing molybdenum (Mo), a layer containing a molybdenum nitride (MoN), and a layer containing molybdenum carbide (MoC).
A tertiary ester-containing aromatic vinyl monomer is prepared by reacting an N-acylimidazole compound with a tertiary alcohol compound in the presence of a metal alkoxide as a reaction promoter. The tertiary ester-containing aromatic vinyl monomer of quality is prepared at a high efficiency and is applicable to resist compositions adapted for the EB and EUV lithography processes.
C08F 220/12 - Esters des alcools ou des phénols monohydriques
C08F 220/18 - Esters des alcools ou des phénols monohydriques des phénols ou des alcools contenant plusieurs atomes de carbone avec l'acide acrylique ou l'acide méthacrylique
A reflective photomask blank has: a substrate 10; a reflective multilayer film 20 that is formed on one main surface of the substrate 10 and reflects the exposure light; a protective film 50 formed in contact with the reflective multilayer film 20; and an absorbing film 70 that is formed on the protective film 50 and absorbs the exposure light. The protective film 50 is formed using a film containing ruthenium (Ru). The absorbing film 70 is formed using a single-layer film containing tantalum (Ta) and nitrogen (N), and has a content of nitrogen of 30 atom % or more and less than 60 atom %. Contrast between light reflected from a surface of the protective film 50 and light reflected on a surface of the absorbing film 70 with respect to light having a wavelength of 193 nm to 248 nm is 20% or more.
C03C 17/09 - Traitement de surface du verre, p. ex. du verre dévitrifié, autre que sous forme de fibres ou de filaments, par revêtement par des métaux par dépôt à partir d'une phase vapeur
C03C 17/34 - Traitement de surface du verre, p. ex. du verre dévitrifié, autre que sous forme de fibres ou de filaments, par revêtement avec au moins deux revêtements ayant des compositions différentes
C03C 17/36 - Traitement de surface du verre, p. ex. du verre dévitrifié, autre que sous forme de fibres ou de filaments, par revêtement avec au moins deux revêtements ayant des compositions différentes un revêtement au moins étant un métal
73.
METHOD OF MANUFACTURING SOLID PHARMACEUTICAL PREPARATION COATED WITH SOLVENT-FREE COATING MATERIAL
Provided is a method of manufacturing a solid pharmaceutical preparation which enables the coating using spraying of powder, containing HPMCAS, alone and requiring only a single layering process. The method of manufacturing a solid pharmaceutical preparation coated with a solvent-free coating material essentially includes the steps of: mixing a powdered hydroxypropylmethylcellulose acetate succinate, a powdered plasticizer, and a powdered wetting agent in advance, as a preliminary mixing step, to prepare a precursor mixture; mixing the precursor mixture and a solid pharmaceutical preparation, as a mixing step, to produce a mixture product; and heating the mixture product, as a heating step, to obtain a coated solid pharmaceutical preparation.
The present invention is an aldimine-modified silicone represented by formula (1). Formula (1): (AR121/2aa(R122/2bb(R13/24/24/2)d (In this formula, A is an aldimine group represented by formula (2), each R1is independently a C1-10 monovalent hydrocarbon group, a satisfies 2 ≤ a ≤ 5, b satisfies 0 < b ≤ 200, c satisfies 0 ≤ c ≤ 1, d satisfies 0 ≤ d ≤ 1, and 2 ≤ a + b + c + d ≤ 200 is satisfied.) Formula (2): -Q1-CH=N-R2(In this formula, Q1is a C2-10 divalent hydrocarbon group, and R2 is a C1-10 monovalent hydrocarbon group.) In view of the above, provided are an aldimine-modified silicone and a method for producing said aldimine-modified silicone which make long-term single-liquid storage of a silicone resin composition possible without chemically modifying a polyamine compound.
C08G 77/388 - Polysiloxanes modifiés par post-traitement chimique contenant des atomes autres que le carbone, l'hydrogène, l'oxygène ou le silicium contenant de l'azote
This filtration membrane regeneration method comprises a chemical liquid cleaning step in which a filtration membrane is cleaned using a chemical liquid containing 0.1 wt% to 14 wt% of fluoride ions.
The present invention provides a flame-retardant aromatic polycarbonate resin composition which contains (A) an aromatic polycarbonate resin, (B) an organohydrogenpolysiloxane that is represented by formula (1), and (C) an organic metal salt that does not contain fluorine, and which contains a specific amount of an aromatic polycarbonate resin that has a specific MVR. Formula (1): [(R1O)(R221/2aa[(R331/2bb[(H)(R42/2cxx(R52-x2/2dd[(R622/2ee[(R73/2ff (In the formula, R1to R7 each represent an alkyl group or the like; Ar represents an aryl group; x is 1 or 2; 0 < a ≤ 0.03; 0 < b ≤ 0.30; 0 ≤ c ≤ 0.45; 0.20 ≤ d ≤ 0.70; 0 ≤ e ≤ 0.20; 0 ≤ f ≤ 0.70; and (a + b + c + d + e + f) is 1.)
[Problem] The purpose of the present invention is to provide a surface modifier which contains a water-soluble polyether-modified organopolysiloxane, while maintaining the surface characteristics of a polyether-modified polyorganosiloxane. [Solution] The present invention provides a surface modifier which is composed of a polyether-modified organopolysiloxane that has an oxyethylene group and an oxypropylene group, the surface modifier being characterized in that: the polyether-modified organopolysiloxane has an oxyethylene group content of 35 mass% or less; and a 1 mass% aqueous solution of the polyether-modified organopolysiloxane has a Haze value of 5.0 or less at 25°C, and a cloud number of 10 or more. [Selected drawing] None
According to the present invention, a cured coating having exceptional water and oil repellency and abrasion resistance as well as exceptional chucking properties can be formed by using a fluoropolyether-group-containing polymer having a silanol group or a hydrolyzable silyl group represented by formula (1)
According to the present invention, a cured coating having exceptional water and oil repellency and abrasion resistance as well as exceptional chucking properties can be formed by using a fluoropolyether-group-containing polymer having a silanol group or a hydrolyzable silyl group represented by formula (1)
(Rf is a divalent fluoroxyalkylene-group-containing polymer residue, U is a divalent or trivalent organic group, Z is a silalkylene structure or a silarylene structure, Y is a divalent organic group, R is a C1-4 alkyl group or a phenyl group, X is a hydroxyl group or a hydrolyzable group, n is 1-3, and m is 1 or 2)
as a surface treatment agent including said polymer and/or a partial (hydrolyzed) condensate thereof.
Provided is a thermally conductive composition that includes
(A) 100 parts by mass of an organopolysiloxane that is represented by formula (1) and is a liquid at 23° C.
Provided is a thermally conductive composition that includes
(A) 100 parts by mass of an organopolysiloxane that is represented by formula (1) and is a liquid at 23° C.
(R3SiO1/2)a(R2SiO2/2)b(RSiO3/2)c(SiO4/2)d(O1/2X)e (1)
Provided is a thermally conductive composition that includes
(A) 100 parts by mass of an organopolysiloxane that is represented by formula (1) and is a liquid at 23° C.
(R3SiO1/2)a(R2SiO2/2)b(RSiO3/2)c(SiO4/2)d(O1/2X)e (1)
(in the formula, R is a hydrogen atom, an alkyl group, an aryl group, an aralkyl group, or an alkenyl group, X is a hydrogen atom or an alkyl group, a, b, c, and d are numbers that satisfy 0≤a≤0.8, 0≤b≤0.8, 0.2≤c≤1, 0≤d≤0.8, and a+b+c+d=1, and e is a number that satisfies 0≤e≤0.1) and
(B) 2,000-7,000 parts by mass of a thermally conductive filler.
Provided is a thermally conductive composition that includes
(A) 100 parts by mass of an organopolysiloxane that is represented by formula (1) and is a liquid at 23° C.
(R3SiO1/2)a(R2SiO2/2)b(RSiO3/2)c(SiO4/2)d(O1/2X)e (1)
(in the formula, R is a hydrogen atom, an alkyl group, an aryl group, an aralkyl group, or an alkenyl group, X is a hydrogen atom or an alkyl group, a, b, c, and d are numbers that satisfy 0≤a≤0.8, 0≤b≤0.8, 0.2≤c≤1, 0≤d≤0.8, and a+b+c+d=1, and e is a number that satisfies 0≤e≤0.1) and
(B) 2,000-7,000 parts by mass of a thermally conductive filler.
The viscosity of the thermally conductive composition at 25° C. is no more than 1,000 Pa·s.
A resist composition comprising an acid generator containing a sulfonium or iodonium salt of an arylsulfonic acid substituted with at least two iodine atoms is provided. It exhibits a high sensitivity and forms a pattern with reduced LWR or improved CDU independent of whether it is of positive or negative type.
C08F 212/14 - Monomères contenant un seul radical aliphatique non saturé contenant un cycle substitué par des hétéro-atomes ou des groupes contenant des hétéro-atomes
C08F 220/18 - Esters des alcools ou des phénols monohydriques des phénols ou des alcools contenant plusieurs atomes de carbone avec l'acide acrylique ou l'acide méthacrylique
A resist composition comprising a base polymer possessing a sulfonium or iodonium salt structure having an iodized arylsulfonic acid anion attached to its backbone is provided. It exhibits a high sensitivity and forms a pattern with reduced LWR or improved CDU independent of whether it is of positive or negative type.
A positive resist composition is provided comprising a base polymer comprising repeat units (a) having a substituted or unsubstituted carboxy group and a substituted or unsubstituted phenolic hydroxy group, repeat units (b) having an acid labile group, and repeat units (c) consisting of a sulfonic acid anion bonded to the polymer backbone and a sulfonium or iodonium cation. It exhibits a high sensitivity and resolution and forms a pattern of satisfactory profile with reduced edge roughness or dimensional variation.
Provided are an insulating coating material for coating electric wire, which is capable of being cured at a relatively low temperature without using a high-boiling point solvent such as N-methyl-2-pyrrolidone (NMP), and provides a cured product that is excellent in balance between heat resistance, moisture resistance, insulation property, and flexibility; and an insulated wire or the like using the same. The insulating coating material for coating electric wire includes (A) a maleimide compound having a bisphenol structure and a number average molecular weight of 5,000 to 50,000, and (B) a reaction initiator. The insulated wire includes a cured film formed of the insulating coating material for coating electric wire.
H01B 3/30 - Isolateurs ou corps isolants caractérisés par le matériau isolantEmploi de matériaux spécifiés pour leurs propriétés isolantes ou diélectriques composés principalement de substances organiques matières plastiquesIsolateurs ou corps isolants caractérisés par le matériau isolantEmploi de matériaux spécifiés pour leurs propriétés isolantes ou diélectriques composés principalement de substances organiques résinesIsolateurs ou corps isolants caractérisés par le matériau isolantEmploi de matériaux spécifiés pour leurs propriétés isolantes ou diélectriques composés principalement de substances organiques cires
84.
QUANTUM DOT BODY, QUANTUM DOT COMPOSITION, AND WAVELENGTH CONVERSION MATERIAL AND PRODUCTION METHOD THEREOF
This quantum dot body comprises a quantum dot that emits fluorescent light by the action of excitation light. The quantum dot body is characterized in that the quantum dot comprises a semiconductor nanoparticle core and a semiconductor nanoparticle shell that coats the semiconductor nanoparticle core, the surface of the quantum dot is coated with a metal oxide, and the surface of the metal oxide is modified with a phosphonic acid derivative. The quantum dot body is also characterized by having a polymer coating layer on the outermost surface thereof, wherein the polymer coating layer is formed by bonding a reactive substituent in the phosphonic acid derivative to a reactive substituent in a polymer. As a result, there are provided: a quantum dot body which is further improved in stability while maintaining the fluorescence emission characteristics of a quantum dot, and is also further improved in compatibility with a highly polar solvent or a photosensitive resin composition; a quantum dot composition in which the quantum dot body is dispersed in a resin material; a wavelength conversion material obtained by curing the quantum dot composition; and a method for producing the wavelength conversion material.
C09K 11/56 - Substances luminescentes, p. ex. électroluminescentes, chimiluminescentes contenant des substances inorganiques luminescentes contenant du soufre
C09K 11/70 - Substances luminescentes, p. ex. électroluminescentes, chimiluminescentes contenant des substances inorganiques luminescentes contenant du phosphore
C09K 11/88 - Substances luminescentes, p. ex. électroluminescentes, chimiluminescentes contenant des substances inorganiques luminescentes contenant du sélénium, du tellure ou des chalcogènes non spécifiés
Provided is a dispersion having excellent dispersibility, especially dispersibility in aqueous media, water resistance, and feel on use (absence of stickiness) that contains components (a)-(d): (a) 10-85 mass% of a hydrophobized inorganic powder having a number-average primary particle size by image analysis of a transmission electron micrograph of more than 200 nm and equal to or less than 700 nm, (b) 1-80 mass% of an aqueous component having two or more alcoholic hydroxyl groups, (c) 1-20 mass% of a polyglycerol-modified silicone that is soluble in component (b), and (d) 0-2 mass% of a polyglycerol-modified silicone that is insoluble in component (b), where the ratio of the content of component (d) to the content of component (c) represented by (d)/(c) is 0.1 or less.
A61K 8/894 - Polysiloxanes saturés, p. ex. diméthicone, phényl triméthicone, C24-C28 méthicone, stéaryl diméthicone modifiés par un groupe polyoxyalkylène, p. ex. cétyl diméthicone copolyol
A61Q 1/04 - Préparations contenant des colorants cutanés, p. ex. pigments pour les lèvres
[Problem] The purpose of the present invention is to provide a polyether-modified organopolysiloxane which has good water solubility without impairing the characteristics of siloxane, while having a polyether chain. [Solution] The present invention provides a polyether-modified organopolysiloxane which is represented by formula (1) and has a block copolymer structure comprising a polyblock structure of oxyethylene and a polyblock structure of oxypropylene. (In the formula, each R independently represents a group selected from among an alkyl group having 1 to 10 carbon atoms, an aryl group having 6 to 10 carbon atoms, and an aralkyl group having 7 to 10 carbon atoms; x represents an integer of 1 to 100; and each R1independently represents a group represented by formula (2).) (In the formula, R2 represents an alkyl group having 1 to 12 carbon atoms or an acetyl group; n represents an integer of 2 to 10; a represents an integer of 3 to 60; b represents an integer of 3 to 60; b/(a + b) is within the range of 0.3 to 0.8; and oxypropylene in parentheses with the subscript a and oxyethylene in parentheses with the subscript b respectively have polyblock structures in the sequence shown in formula (2).)
A film forming apparatus including an atomizing means for atomizing a raw material solution to form a raw material mist, a carrier gas supply means to transport the raw material mist, a mist supply means to supply a gas mixture, in which the raw material mist and the carrier gas are mixed, to a surface of a substrate, a stage on which the substrate is placed, a measurement means for directly or indirectly measuring a supply amount of the raw material mist to output a signal in accordance with a measured value obtained by the measurement, and a control means for receiving the signal to adjust the supply amount of the raw material mist based on the signal.
C23C 16/448 - Revêtement chimique par décomposition de composés gazeux, ne laissant pas de produits de réaction du matériau de la surface dans le revêtement, c.-à-d. procédés de dépôt chimique en phase vapeur [CVD] caractérisé par le procédé de revêtement caractérisé par le procédé utilisé pour produire des courants de gaz réactifs, p. ex. par évaporation ou par sublimation de matériaux précurseurs
C23C 16/458 - Revêtement chimique par décomposition de composés gazeux, ne laissant pas de produits de réaction du matériau de la surface dans le revêtement, c.-à-d. procédés de dépôt chimique en phase vapeur [CVD] caractérisé par le procédé de revêtement caractérisé par le procédé utilisé pour supporter les substrats dans la chambre de réaction
C23C 16/52 - Commande ou régulation du processus de dépôt
88.
CRYSTALLINE OXIDE FILM, LAMINATED STRUCTURE, SEMICONDUCTOR DEVICE, AND METHOD FOR PRODUCING CRYSTALLINE OXIDE FILM
A crystalline oxide film containing gallium as a main component, in which when CuKα rays are made incident on the crystalline oxide film to perform X-ray diffraction, a reflection output in scanning ω and 2θ has a local maximum point when 16.20°<2θ<39.90° and 20.30°<ω<32.20° at an angle φ around a φ axis orthogonal to a surface of the crystalline oxide film at the angle φ where a peak attributable to the crystalline oxide film by ω-2θ measurement is maximum, and 40.10°<ω+θ<40.40° relative to ω and θ at which the reflection output reaches a maximum is satisfied. This provides the crystalline oxide film, a laminated structure, a semiconductor device with excellent semiconductor properties, particularly excellent withstand voltage, and a method for producing a crystalline oxide film.
A thermal conductive silicone composition including: (A) an organopolysiloxane having at least two alkenyl groups per molecule: 100 parts by mass; (B) an organohydrogen polysiloxane having at least two silicon atom-bonded hydrogen atoms per molecule: such that (the number of Si—H groups in component (B))/(the number of alkenyl groups in component (A)) is 0.5 to 3.0; (C) a filler containing one or more thermal conductive powders: 800 to 20,000 parts by mass; (D) a hydrolyzable organopolysiloxane of formula (1): 20 to 400 parts by mass; (E) an organosilane of formula (2), R2bSi(OR3)4-b: 0.01 to 100 parts by mass; (F) platinum or a platinum compound: 0.1 to 500 ppm as platinum atoms relative to component (A); and (G) a reaction regulator: 0.01 to 1 parts by mass.
A thermal conductive silicone composition including: (A) an organopolysiloxane having at least two alkenyl groups per molecule: 100 parts by mass; (B) an organohydrogen polysiloxane having at least two silicon atom-bonded hydrogen atoms per molecule: such that (the number of Si—H groups in component (B))/(the number of alkenyl groups in component (A)) is 0.5 to 3.0; (C) a filler containing one or more thermal conductive powders: 800 to 20,000 parts by mass; (D) a hydrolyzable organopolysiloxane of formula (1): 20 to 400 parts by mass; (E) an organosilane of formula (2), R2bSi(OR3)4-b: 0.01 to 100 parts by mass; (F) platinum or a platinum compound: 0.1 to 500 ppm as platinum atoms relative to component (A); and (G) a reaction regulator: 0.01 to 1 parts by mass.
The present invention is a composition for forming an organic film, containing: (A) a material for forming an organic film; (B) a polymer having a repeating unit represented by the following general formula (1); and (C) a solvent, where W1 represents a saturated or unsaturated divalent organic group having 2 to 50 carbon atoms and having one or more fluorine-containing structures represented by the following formulae (2), and W2 represents a saturated or unsaturated divalent organic group having 2 to 50 carbon atoms. This can provide: a composition for forming an organic film which is excellent in film-formability on a substrate and filling property, suppresses humps in an EBR process, and has an excellent process margin when used for an organic film for a multilayer resist process; a method for forming an organic film, using the composition; a patterning process; and a polymer to be contained in the composition for forming an organic film.
The present invention is a composition for forming an organic film, containing: (A) a material for forming an organic film; (B) a polymer having a repeating unit represented by the following general formula (1); and (C) a solvent, where W1 represents a saturated or unsaturated divalent organic group having 2 to 50 carbon atoms and having one or more fluorine-containing structures represented by the following formulae (2), and W2 represents a saturated or unsaturated divalent organic group having 2 to 50 carbon atoms. This can provide: a composition for forming an organic film which is excellent in film-formability on a substrate and filling property, suppresses humps in an EBR process, and has an excellent process margin when used for an organic film for a multilayer resist process; a method for forming an organic film, using the composition; a patterning process; and a polymer to be contained in the composition for forming an organic film.
G03F 7/09 - Matériaux photosensibles caractérisés par des détails de structure, p. ex. supports, couches auxiliaires
G03F 7/11 - Matériaux photosensibles caractérisés par des détails de structure, p. ex. supports, couches auxiliaires avec des couches de recouvrement ou des couches intermédiaires, p. ex. couches d'ancrage
H01L 21/027 - Fabrication de masques sur des corps semi-conducteurs pour traitement photolithographique ultérieur, non prévue dans le groupe ou
H01L 21/033 - Fabrication de masques sur des corps semi-conducteurs pour traitement photolithographique ultérieur, non prévue dans le groupe ou comportant des couches inorganiques
H01L 21/308 - Traitement chimique ou électrique, p. ex. gravure électrolytique en utilisant des masques
H01L 21/3213 - Gravure physique ou chimique des couches, p. ex. pour produire une couche avec une configuration donnée à partir d'une couche étendue déposée au préalable
91.
NEGATIVE ELECTRODE ACTIVE MATERIAL FOR NONAQUEOUS ELECTROLYTE SECONDARY BATTERY, AND METHOD FOR PRODUCING SAME
xx: 0.5 ≤ x ≤ 1.6); the silicon compound particles include a lithium compound; surfaces of the negative electrode active material particles are at least partially covered with a carbon material; the carbon material has a peak originating from the G band between 1530 cm−1and 1590 cm−1; the quantity of the covering carbon material is greater than 0.5% by mass and no greater than 10% by mass; and the carbon material is partly or wholly diamond-like carbon. Due to this cofiguration, a water-based negative electrode slurry produced when a negative electrode of a secondary battery is produced can be stabilized and a negative electrode active material for a nonaqueous electrolyte secondary battery is provided that can improve initial charge and discharge characteristics when used as a negative electrode active material of the secondary battery.
H01M 4/48 - Emploi de substances spécifiées comme matériaux actifs, masses actives, liquides actifs d'oxydes ou d'hydroxydes inorganiques
H01M 4/36 - Emploi de substances spécifiées comme matériaux actifs, masses actives, liquides actifs
H01M 4/58 - Emploi de substances spécifiées comme matériaux actifs, masses actives, liquides actifs de composés inorganiques autres que les oxydes ou les hydroxydes, p. ex. sulfures, séléniures, tellurures, halogénures ou LiCoFyEmploi de substances spécifiées comme matériaux actifs, masses actives, liquides actifs de structures polyanioniques, p. ex. phosphates, silicates ou borates
Provided is a perfluoropolyether-organopolysiloxane block copolymer that has a perfluoropolyether group, that allows control of, for example, the number of siloxane units in the molecule, and that has excellent affinity with non-fluorinated organic compounds. A perfluoropolyether-organopolysiloxane block copolymer of the present invention is a perfluoropolyether-organopolysiloxane block copolymer having a perfluoropolyether block and an organopolysiloxane block. The organopolysiloxane block has, as a side chain thereof, one or more groups selected from an aralkyl group and a group having an oxyalkylene unit.
C08G 77/46 - Polymères séquencés ou greffés contenant des segments de polysiloxanes contenant des segments de polyéthers
C08G 77/00 - Composés macromoléculaires obtenus par des réactions créant dans la chaîne principale de la macromolécule une liaison contenant du silicium, avec ou sans soufre, azote, oxygène ou carbone
C08G 77/385 - Polysiloxanes modifiés par post-traitement chimique contenant des atomes autres que le carbone, l'hydrogène, l'oxygène ou le silicium contenant des halogènes
93.
Composition For Forming Resist Underlayer Film, Resist Underlayer Film, Method For Manufacturing Resist Underlayer Film, Patterning Process, And Method For Manufacturing Semiconductor Device
The present invention is a composition for forming a resist underlayer film, containing: (A) a polyether compound containing a repeating unit represented by the following general formula (I); and (B) an organic solvent, where Ar1 represents a substituted or unsubstituted aryl group having 6 to 30 carbon atoms or the like, R1 represents a substituted or unsubstituted, linear, branched, or cyclic, saturated or unsaturated divalent hydrocarbon group having 1 to 20 carbon atoms or a substituted or unsubstituted, linear, branched, or cyclic heteroalkylene group having 1 to 20 carbon atoms, and “n” and “m” each represent an integer of 0 or more. This can provide a composition for forming a resist underlayer film with which it is possible to form a resist underlayer film that exhibits excellent processing resistance and excellent gas permeability.
The present invention is a composition for forming a resist underlayer film, containing: (A) a polyether compound containing a repeating unit represented by the following general formula (I); and (B) an organic solvent, where Ar1 represents a substituted or unsubstituted aryl group having 6 to 30 carbon atoms or the like, R1 represents a substituted or unsubstituted, linear, branched, or cyclic, saturated or unsaturated divalent hydrocarbon group having 1 to 20 carbon atoms or a substituted or unsubstituted, linear, branched, or cyclic heteroalkylene group having 1 to 20 carbon atoms, and “n” and “m” each represent an integer of 0 or more. This can provide a composition for forming a resist underlayer film with which it is possible to form a resist underlayer film that exhibits excellent processing resistance and excellent gas permeability.
C08G 65/40 - Composés macromoléculaires obtenus par des réactions créant une liaison éther dans la chaîne principale de la macromolécule à partir de composés hydroxylés ou de leurs dérivés métalliques dérivés des phénols à partir des phénols et d'autres composés
G03F 7/09 - Matériaux photosensibles caractérisés par des détails de structure, p. ex. supports, couches auxiliaires
G03F 7/11 - Matériaux photosensibles caractérisés par des détails de structure, p. ex. supports, couches auxiliaires avec des couches de recouvrement ou des couches intermédiaires, p. ex. couches d'ancrage
G03F 7/16 - Procédés de couchageAppareillages à cet effet
H01L 21/027 - Fabrication de masques sur des corps semi-conducteurs pour traitement photolithographique ultérieur, non prévue dans le groupe ou
H01L 21/033 - Fabrication de masques sur des corps semi-conducteurs pour traitement photolithographique ultérieur, non prévue dans le groupe ou comportant des couches inorganiques
H01L 21/3065 - Gravure par plasmaGravure au moyen d'ions réactifs
H01L 21/308 - Traitement chimique ou électrique, p. ex. gravure électrolytique en utilisant des masques
94.
HEAT-REFLECTING MEMBER, AND METHOD FOR MANUFACTURING GLASS MEMBER HAVING HEAT-REFLECTING LAYER INCLUDED THEREIN
One aspect is a heat reflective member, a laminated structure in which quartz glass layers are formed on an upper surface and a lower surface of a siliceous sintered powder layer. The heat reflective member has an impermeable layer formed at a portion of the siliceous sintered powder layer at a cut-out end portion of the heat reflective member. The impermeable layer has a thickness at least larger than half of a thickness of the siliceous sintered powder layer and through which a gas or a liquid is prevented from penetrating. A buffer layer is formed between the impermeable layer and the siliceous sintered powder layer next to the impermeable layer and spaced apart from the cut-out end portion. The buffer layer changes in density from the impermeable layer toward the siliceous sintered powder layer.
The present invention provides an organopolysiloxane which is characterized by having one or more photodegradable groups among those represented by general formulae (1) and (2). As a result, the present invention provides an organopolysiloxane which has a photodegradable group and generates an ethylenically unsaturated group when irradiated with light. (In the formulae, R1represents a substituted or unsubstituted alkyl group, a cycloalkyl group, an aralkyl group or an aryl group, and R2 independently represents a hydrogen atom, a substituted or unsubstituted alkyl group, or a substituted or unsubstituted aryl group. The line to which a wiggly line is attached indicates an atomic bond.)
An onium salt consisting of an aromatic ring-bearing sulfonic acid anion and a cation, the anion having an acid labile group-protected hydroxy group and a fluorinated substituent group on the aromatic ring, is provided. A resist film of a chemically amplified resist composition comprising the onium salt has advantages including reduced LWR, high resolution, and collapse resistance when processed by the DUV, EUV or EB lithography.
C07C 211/63 - Composés d'ammonium quaternaire ayant des atomes d'azote quaternisés liés à des atomes de carbone acycliques
C07C 309/12 - Acides sulfoniques ayant des groupes sulfo liés à des atomes de carbone acycliques d'un squelette carboné acyclique saturé contenant des atomes d'oxygène liés au squelette carboné contenant des groupes hydroxy estérifiés liés au squelette carboné
C07C 309/24 - Acides sulfoniques ayant des groupes sulfo liés à des atomes de carbone acycliques d'un squelette carboné contenant des cycles aromatiques à six chaînons
C07C 321/28 - Sulfures, hydropolysulfures ou polysulfures ayant des groupes thio liés à des atomes de carbone de cycles aromatiques à six chaînons
C07D 307/12 - Radicaux substitués par des atomes d'oxygène
C07D 327/08 - Cycles à six chaînons condensés en [b, e] avec deux carbocycles à six chaînons
C07D 333/54 - Benzo [b] thiophènesBenzo [b] thiophènes hydrogénés avec uniquement des atomes d'hydrogène, des radicaux hydrocarbonés ou des radicaux hydrocarbonés substitués, liés directement aux atomes de carbone de l'hétérocycle
C07D 493/22 - Composés hétérocycliques contenant des atomes d'oxygène comme uniques hétéro-atomes dans le système condensé dans lesquels le système condensé contient au moins quatre hétérocycles
The present invention is a composition for forming a resist underlayer film, containing: (A) a novolak resin having a repeating unit structure represented by the following general formula (I) and/or (II); and (B) an organic solvent, where R1 is a combination of at least two kinds within a single resin and represents a hydrogen atom, a substituted or unsubstituted, linear, branched, or cyclic alkyl group having 1 to 20 carbon atoms, a substituted or unsubstituted, linear, branched, or cyclic alkenyl group having 2 to 20 carbon atoms, or a substituted or unsubstituted, linear, branched, or cyclic alkynyl group having 2 to 20 carbon atoms, and “n1” represents an integer of 1 or more. This can provide a composition for forming a resist underlayer film with which it is possible to form a resist underlayer film that exhibits excellent processing resistance and excellent gas permeability.
The present invention is a composition for forming a resist underlayer film, containing: (A) a novolak resin having a repeating unit structure represented by the following general formula (I) and/or (II); and (B) an organic solvent, where R1 is a combination of at least two kinds within a single resin and represents a hydrogen atom, a substituted or unsubstituted, linear, branched, or cyclic alkyl group having 1 to 20 carbon atoms, a substituted or unsubstituted, linear, branched, or cyclic alkenyl group having 2 to 20 carbon atoms, or a substituted or unsubstituted, linear, branched, or cyclic alkynyl group having 2 to 20 carbon atoms, and “n1” represents an integer of 1 or more. This can provide a composition for forming a resist underlayer film with which it is possible to form a resist underlayer film that exhibits excellent processing resistance and excellent gas permeability.
G03F 7/039 - Composés macromoléculaires photodégradables, p. ex. réserves positives sensibles aux électrons
C08G 8/04 - Polymères de condensation obtenus uniquement à partir d'aldéhydes ou de cétones avec des phénols d'aldéhydes
C08G 8/08 - Polymères de condensation obtenus uniquement à partir d'aldéhydes ou de cétones avec des phénols d'aldéhydes de formaldéhyde, p. ex. de formaldéhyde formé in situ
C08G 8/20 - Polymères de condensation obtenus uniquement à partir d'aldéhydes ou de cétones avec des phénols d'aldéhydes de formaldéhyde, p. ex. de formaldéhyde formé in situ avec des phénols polyhydriques
G03F 7/00 - Production par voie photomécanique, p. ex. photolithographique, de surfaces texturées, p. ex. surfaces impriméesMatériaux à cet effet, p. ex. comportant des photoréservesAppareillages spécialement adaptés à cet effet
G03F 7/16 - Procédés de couchageAppareillages à cet effet
H01L 21/027 - Fabrication de masques sur des corps semi-conducteurs pour traitement photolithographique ultérieur, non prévue dans le groupe ou
A hydrophilic composition containing (A) 100 mass parts of a hydrophilic copolymer containing structural units represented by formula (1) and structural units represented by formula (2) and (B) 0.001-10 mass parts of a blocked isocyanate silane compound yields a coating film having exceptional hydrophilicity, anti-fogging properties, and water resistance. [In formula (1), R1represents a hydrogen atom or a methyl group, R2each independently represent a C1-6 alkyl group, and n represents an integer of 1-6. In formula (2), R3represents a hydrogen atom or a methyl group, X1represents -NH- or -O-, Z1represents a hydrogen atom, a methyl group, a hydroxyl group, a carboxy group, or an amino group, and m represents an integer of 0-10 (however, when m is 0, Z1 is a hydrogen atom or a methyl group.) An asterisk * represents bonding to an adjacent structural unit.]
Disclosed is a curable organopolysiloxane composition which contains the components (A), (B), (C) and (D) described below, does not separate or precipitate an addition reaction control agent even when stored at low temperatures, has excellent low-temperature storage stability, and has excellent pot life at high temperatures. (A) an organopolysiloxane which has an alkenyl group bonded to a silicon atom (B) an organohydrogenpolysiloxane (C) an addition reaction control agent which contains the components (C-1) and (C-2) described below, and is in an amount of 0.06-0.60 part by mass relative to a total of 100 parts by mass of the components (A) and (B), wherein the mass ratio (C-2)/(C-1) of the component (C-2) to the component (C-1) is 0.10-5.00, the component (C-1) is an acetylene alcohol having a boiling point of 150-189°C, and the component (C-2) is a compound having a refractive index of 1.420-1.450 at 25°C and a boiling point of 190°C or higher (D) a platinum group metal-based catalyst
The present invention is a negative electrode active material comprising negative electrode active material particles. The negative electrode active material is characterized in that: the negative electrode active material particles include porous carbon structures; silicon and a silicon oxide are dispersed in the interiors of the porous carbon structures; a low-valent nanosilicon oxide in an amorphous state is dispersed in at least surface-layer portions of the interiors of the porous carbon structures; the low-valent nanosilicon oxide is SiOx, where x is less than 1.0; and nanosilicon with a crystalline structure is dispersed at least in deep layer portions of the interiors of the porous carbon structures, such portions being deeper than where the low-valent nanosilicon oxide is dispersed. Due to this configuration, it is possible to provide a negative electrode active material that can increase capacity while maintaining battery characteristics.
H01M 4/38 - Emploi de substances spécifiées comme matériaux actifs, masses actives, liquides actifs d'éléments simples ou d'alliages
C01B 33/03 - Préparation par décomposition ou réduction de composés de silicium gazeux ou vaporisés autres que la silice ou un matériau contenant de la silice par décomposition d'halogénures de silicium ou de silanes halogénés ou réduction de ceux-ci avec de l'hydrogène comme seul agent réducteur
