Tokyo Electron America, Inc.

United States of America

 
Total IP 63
Total IP Rank # 21,822
IP Activity Score 0/5.0    0
IP Activity Rank # 1,688,253
Parent Entity Tokyo Electron Limited

Patents

Trademarks

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Last Patent 2013 - Method of forming metal carbide ...
First Patent 2000 - Clustering for data compression

Latest Inventions, Goods, Services

2012 Invention Method of forming metal carbide barrier layers for fluorocarbon films. A method of forming metal ...
Invention Method for modifying metal cap layers in semiconductor devices. A method for forming a semiconduc...
Invention Method of slimming radiation-sensitive material lines in lithographic applications. A method and ...
Invention Etch process for controlling pattern cd and integrity in multi-layer masks. A method of patternin...
Invention Method for controlling dangling bonds in fluorocarbon films. Embodiments of the invention describ...
Invention Method for patterning a full metal gate structure. A method of patterning a gate structure (100, ...
Invention Method of etching silicon nitride films. A processing method is provided for plasma etching featu...
Invention Method of operating filament assisted chemical vapor deposition system. A method of performing a ...
Invention Method of etching features in silicon nitride films. A processing method is provided for plasma e...
2011 Invention Double patterning with inline critical dimension slimming. A method for double patterning a subst...
Invention Sidewall image transfer pitch doubling and inline critical dimension slimming. A method for patte...
Invention Method of depositing dielectric films using microwave plasma. Embodiments of the invention descri...
Invention Selective etch process for silicon nitride. A method for selectively etching a substrate (25, 140...
Invention Method for high aspect ratio patterning in spin-on layer. A method of patterning a substrate (110...
Invention Method of selectively etching an insulation stack for a metal interconnect. A method of patternin...
2010 Invention Method for reworking a silicon-containing arc layer on a substrate. A method is provided for rewo...
2009 Invention Method for forming aluminum-doped metal carbonitride gate electrodes. A method for forming an alu...
2008 Invention Electrical contacts for integrated circuits and methods of forming using gas cluster ion beam pro...
Invention Optical metrology of single features. The profile of a single feature formed on a wafer can be de...
Invention Apparatus and methods of forming a gas cluster ion beam using a low-pressure source. Embodiments ...
Invention Dynamic temperature backside gas control for improved within-substrate processing uniformity. Con...
Invention Processing system and method for performing high throughput non-plasma processing. Embodiments of...
Invention Model and parameter selection for optical metrology. A profile model for use in optical metrology...
Invention Atomic layer deposition systems and methods. Systems and methods for depositing thin films using ...
Invention Semiconductor wafer boat for batch processing. A boat (50) is provided for stacking semiconductor...
2007 Invention Generation of a library of periodic grating diffraction signals. A method of generating a library...
Invention Processing system containing a hot filament hydrogen radical source for integrated substrate proc...
Invention Semiconductor devices containing nitrided high dielectric constant films and method of forming. A...
Invention Method for double patterning a developable anti-reflective coating. A method for double patternin...
Invention Substrate cleaning method. A method is provided for reducing the amount of film fragments (66a) d...
Invention Method for integrated substrate processing in copper metallization. A method of copper metallizat...
Invention Exhaust assembly for a plasma processing system and method. An exhaust assembly is described for ...
Invention Thermal processing system with improved process gas flow and method for injecting a process gas i...
Invention Method for formation of oxidized aluminum nitride films. A method is provided for in-situ formati...
Invention Depositing ruthenium films using ionized physical vapor deposition (ipvd). An iPVD system (200A) ...
Invention Method for creating a built-in self test (bist) table for monitoring a monolayer deposition (mld)...
Invention Monitoring a monolayer deposition (mld) system using a built-in self test (bist) table. A method ...
Invention Monitoring a system during low-pressure processes. A method of monitoring a processing system (10...
Invention Monitoring a single-wafer processing system. A method of monitoring a single-wafer processing sys...
Invention Semiconductor device with gate dielectric containing aluminum and mixed rare earth elements. A se...
Invention Method of forming mixed rare earth nitride and aluminum nitride films by atomic layer deposition....
Invention Method of forming mixed rare earth oxide and mixed rare earth aluminate films by atomic layer dep...
Invention Method of forming mixed rare earth oxynitride and aluminum oxynitride films by atomic layer depos...
Invention Semiconductor device with gate dielectric containing mixed rare earth elements. A semiconductor d...
Invention Thermal processing furnace, gas delivery system therefor, and methods for delivering a process ga...
Invention Method for replacing a nitrous oxide based oxidation process with a nitric oxide based oxidation ...
Invention System for introducing a precursor gas to a vapor deposition system. A system for introducing a p...
Invention Method for integrating a conformal ruthenium layer into copper metallization of high aspect ratio...
Invention Method for introducing a precursor gas to a vapor deposition system. A method for introducing a p...