A method is proposed of using low-resolution images of at least one product produced by one or more imaging processes, and imaging models characterizing the imaging processes, to determine values for plurality of numerical parameters which collectively define a product model of the at least one product. The determination of the values is performed by forming a loss function based on the acquired images, the imaging models, and the numerical parameters of the model, and performing a minimization algorithm to minimize the loss function with respect to the numerical parameters. Due to prior knowledge of the product encoded in the loss function, the product model may comprise reconstructed images which have a higher resolution than the low-resolution images.
The present disclosure relates to an electron-optical stack for manipulating one or more charged particle beams and associated apparatus and methods. In one arrangement, a plurality of electron-optical plates have major surfaces on opposite sides of the plates. The plates define a set of channels configured to be aligned along a beam path of a charged particle beam to allow the charged particle beam to pass through the plates via the channels. Each channel defines apertures in the two major surfaces of the plate that defines the channel. The apertures have different shapes from each other. The plates are oriented such that the apertures comprise one or more matching aperture pairs along the beam path. The or each matching aperture pair consists of apertures having the same shape defined in adjacent major surfaces of adjacent plates.
Systems and methods of measuring overlay for a sample under a scan performed by a charged-particle beam inspection apparatus include obtaining a first detector signal in response to a first scan of a first target of the sample and a second detector signal in response to a second scan of a second target of the sample; determining a first transformed signal and a second transformed signal by performing a Fourier transform on the first detector signal and the second detector signal; and determining, based on the first transformed signal and the second transformed signal, an overlay value of the sample.
Disclosed is a method of determining an illumination-detection system alignment of an illumination-detection system describing alignment of at least one detector and/or measurement illumination of a metrology apparatus in terms of two or more illumination-detection system alignment parameters, each illumination-detection system alignment parameter relating to a respective degree of freedom for aligning the detector and/or the measurement illumination. The method comprises obtaining a diffraction pattern relating to diffraction of broadband radiation from a structure; transforming each of one or more diffraction orders of the diffraction pattern to a respective region coordinate system, each region coordinate system comprising a first axis and a second axis, each region coordinate system being such that said first axis is aligned in relation to a direction of an intensity metric of each transformed diffraction order; and determining illumination-detection system alignment parameter values for the illumination-detection system alignment parameters.
G03F 7/00 - Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printed surfacesMaterials therefor, e.g. comprising photoresistsApparatus specially adapted therefor
A system for removing particles from a surface includes a plurality of ultrasonic transducers, arranged in an array, a control system, in communication with the plurality of ultrasonic transducers, the control system configured to control phase and amplitude of transducers in the array to generate an acoustic particle trap at a selected location on the surface, and to move a particle trapped in the particle trap away from the surface, and an actuator, configured and arranged to relatively move the array of ultrasonic transducers in a scanning pattern over the surface such that different portions of the surface pass through the generated acoustic particle trap.
B08B 7/02 - Cleaning by methods not provided for in a single other subclass or a single group in this subclass by distortion, beating, or vibration of the surface to be cleaned
A lithographic apparatus is described, the apparatus comprising: a patterning device holder for a patterning device configured to impart a pattern to a beam of radiation; a substrate holder configured to hold a substrate; and a projection system configured to project the beam of radiation onto the substrate holder; a plurality of reference markers associated with the patterning device holder; and a sensor apparatus associated with the substrate holder, the sensor apparatus having a periodic pattern having a nominal pitch; wherein the plurality of reference markers includes a first reference marker having a first pitch corresponding to the nominal pitch and a second reference marker having a second pitch corresponding to the sum of the nominal pitch and an error offset value.
G03F 7/00 - Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printed surfacesMaterials therefor, e.g. comprising photoresistsApparatus specially adapted therefor
Disclosed is a metrology apparatus and method. The method comprises obtaining metrology data relating to a measurement obtained by illuminating a periodic structure comprising at least one pitch with illumination comprising a wavelength and capturing at least a plurality of components of interest of said scattered radiation from said periodic structure at a detection image plane, said illumination comprising at least one incoherent dipole, each said incoherent dipole comprising two mutually incoherent monopoles, said scattered radiation passing through at least one angularly resolved plane between said periodic structure and detection image plane; selecting said wavelength and each said at least one pitch such that that mutually coherent interfering components of said components of interest are equidistant to an optical axis of said at least one angularly resolved plane; and determining a parameter of interest of the periodic structure from said scattered radiation.
G03F 7/00 - Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printed surfacesMaterials therefor, e.g. comprising photoresistsApparatus specially adapted therefor
8.
A METHOD FOR DETERMINING A LINEAR MOTOR COMMUTATION ANGLE
Van Den Boogaert, Erwin, Antonius, Henricus, Franciscus
Van Den Bulk, John, David, Johannes, Maria
Kunst, Ronald, Casper
Abstract
A method for determining a commutation angle of a permanent magnetic linear motor comprising a coil array and a mover physically connected to a moving body, the method comprising: applying to the coil array a first set of currents, adapting a phase offset of the first set of currents until the moving body reaches a first stationary condition with a first settled phase offset and a first actuation force, determining an estimated second actuation force, applying to the coil array and varying a second set of currents thereby transitioning the actuation force from the first actuation force to the estimated second actuation force via one or more intermediate force setpoints, further adapting the phase offset of the second set of currents until the moving body reaches a second stationary condition with a second settled phase offset, determining the commutation angle based on the first and the second settled phase offset.
H02P 25/064 - Linear motors of the synchronous type
H02P 6/00 - Arrangements for controlling synchronous motors or other dynamo-electric motors using electronic commutation dependent on the rotor positionElectronic commutators therefor
G03F 7/00 - Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printed surfacesMaterials therefor, e.g. comprising photoresistsApparatus specially adapted therefor
H02K 41/03 - Synchronous motorsMotors moving step by stepReluctance motors
H02P 23/14 - Estimation or adaptation of motor parameters, e.g. rotor time constant, flux, speed, current or voltage
A lithographic apparatus includes an illumination system, a projection system, and a stage. The illumination system illuminates a pattern of a patterning device. The projection system projects an image of the pattern onto a substrate. The stage moves the patterning device or the substrate. The stage includes a support structure, an actuator device, first, second, and third actuator targets, and a tensional member. The third actuator target is attached to a first side of the support structure. The actuator device is disposed proximal to the first and third targets and magnetically interacts with the first and third targets to move the support structure along a direction. The first and second actuator targets disposed at opposite sides of the support structure and are attached at opposite ends of the tensional member. The tensional member transmits a mechanical load to the second side of the support structure via the second actuator target.
G03F 7/00 - Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printed surfacesMaterials therefor, e.g. comprising photoresistsApparatus specially adapted therefor
H01L 21/687 - Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereofApparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches
10.
CABLE SLAB, POSITIONING MODULE AND LITHOGRAPHIC APPARATUS
There is provided a cable slab for connecting a first movable object with a second object, the cable slab comprises a first permanent magnet having a first magnetic field orientation, the cable slab is arranged to be at least partially supported by a support comprising a second magnet having a second magnetic field orientation such that the first permanent magnet and the second magnet are repulsing when the first permanent magnet and the second magnet are facing each other to exert a force on cable slab, and the cable slab comprises one or more clamp brackets, each clamping one or more supply hoses and/or supply cables, the first permanent magnet is arranged in or on one of the one or more clamp brackets.
G03F 7/00 - Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printed surfacesMaterials therefor, e.g. comprising photoresistsApparatus specially adapted therefor
H02G 11/00 - Arrangements of electric cables or lines between relatively-movable parts
11.
METHOD OF DETERMINING A PARASITIC FORCE OF AN ACTUATOR OF AN OPTICAL COMPONENT, CONTROL METHOD FOR AN ACTUATOR, OPTICAL SYSTEM, PROJECTION SYSTEM AND LITHOGRAPHIC APPARATUS.
A method of determining a parasitic force of an actuator (320) of an optical component (300) is described, whereby the actuator is mounted to a first frame (310) and is configured to control a position of the optical component relative to a second frame (340). The method comprises: —obtaining a first position signal representing a position of the optical component relative to the first frame; —performing a low-pass filtering to the first position signal; —obtaining a second position signal representing a position of the optical component relative to the second frame; —performing a high-pass filtering to the second position signal, the high-pass filtering being complementary to the low-pass filtering; —determining the parasitic force of the actuator, based on the combined low-pass filtered first position signal and the high-pass filtered second position signal.
G03F 7/00 - Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printed surfacesMaterials therefor, e.g. comprising photoresistsApparatus specially adapted therefor
G01B 11/00 - Measuring arrangements characterised by the use of optical techniques
G02B 7/182 - Mountings, adjusting means, or light-tight connections, for optical elements for prismsMountings, adjusting means, or light-tight connections, for optical elements for mirrors for mirrors
12.
SYSTEMS AND METHODS FOR ESTIMATING LINE EDGE VARIABILITY AND OPTIMIZING WAFER PRINTING USING POWER SPECTRAL DENSITY
PSDLER,measuredLER,measured crossPSDpitch,measuredPSDpitch,measured PSDLER,waLER,wa ƒerer PSDLER,measuredLER,measured crossPSDpitch-measuredpitch-measured PSDLER,waLER,wa ƒerer er of the plurality of lines.
Reference image data of a sample, for comparison with detected image data from a multi-beam charged particle system using a plurality of charged particle beams, comprises a combination of: main image data extracted from image data of the sample covering a same area as a local charged particle beam, the local charged particle beam being one of the charged particle beams; and cross talk image data extracted from the image data of the sample covering a same area as at least one neighboring charged particle beam, a neighboring charged particle beam being another of the charged particle beams neighboring the local charged particle beam.
A carrier for one or more semiconductor dies, the carrier comprising: a carrier substrate comprising one or more openings; and a flexible membrane, the flexible membrane configured to temporarily support the one or more semiconductor dies and to expand to create one or more blisters, wherein the one or more openings are arranged to release pressure from the one or more blisters.
H01L 21/67 - Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereofApparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components
H01L 21/683 - Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereofApparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components for supporting or gripping
15.
METHODS AND SYSTEMS FOR RETICLE CONDITIONING AND THERMAL MODELING TO IMPROVE RETICLE HEATING STABILITY
A method of reducing non-uniform thermomechanical effects of a reticle in a lithographic process includes conditioning the reticle on a reticle handler to adjust or maintain a temperature of the reticle, determining a temperature distribution of the reticle based on the conditioning, calibrating a reticle heating model based at least in part on the temperature distribution, and reducing a non-uniformity of the reticle based on the calibrated reticle heating model. Advantageously the method can reduce and/or compensate for non-uniform thermomechanical effects of the reticle, account for different reticle usage sequences, reduce conditioning times of the reticle, increase thermal stability of the reticle, increase calibration accuracy and speed of a reticle heating model, avoid rework of substrates, decrease overlay errors, increase throughput, and increase yield and accuracy of the lithographic process.
G03F 7/00 - Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printed surfacesMaterials therefor, e.g. comprising photoresistsApparatus specially adapted therefor
An optical arrangement eliminates the use of a quad non polarized beam splitter (QNPBS) and the need for image stitching. The optical arrangement provides an enhanced transmission gain as with a QNPBS to optimize system throughput. A metrology system (600) includes an illumination mode selector (IMS) (650) comprising a multi-aperture pattern having transmissive portions and reflective portions. The IMS (650) is positioned in a pupil plane (655) of the system (600), and configured to: transmit portions (671) of radiation (604) toward a diffraction grating target (610); and reflect diffracted radiation from the target (610) along a second optical path (631) toward a detector (662). Area decoupling of transmissive and reflective portions on the IMS (650) optimizes the illumination and detection light intensity simultaneously. Plus and minus first diffraction order diffracted radiation from the target (610) may be reflected by two reflective quadrants of the multi-aperture pattern, the two reflective quadrants located on a back or non-radiation source facing side (651) of the IMS (650).
G01B 11/27 - Measuring arrangements characterised by the use of optical techniques for measuring angles or tapersMeasuring arrangements characterised by the use of optical techniques for testing the alignment of axes for testing the alignment of axes
G02B 27/14 - Beam splitting or combining systems operating by reflection only
G03F 7/00 - Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printed surfacesMaterials therefor, e.g. comprising photoresistsApparatus specially adapted therefor
The present disclosure provides an object table intermediate body, comprising: a body having a top surface area for supporting an object and a bottom surface area configured to be supported by an object table; the top surface area being provided with a reduced pressure zone, the reduced pressure zone being connectable to a vacuum connector for providing a reduced pressure, wherein the bottom surface area is substantially flat and the top surface area is curved.
H01L 21/687 - Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereofApparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches
H01L 21/683 - Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereofApparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components for supporting or gripping
The invention provides a Lorentz type permanent magnet motor comprising a permanent magnet motor, comprising at least one coil assembly and at least one magnet assembly. The at least one magnet assembly comprises a first magnet group comprising two or more primary magnets extending along a first direction and a second magnet group comprising two secondary magnets extending along a second direction which is perpendicular to the first direction. The two or more primary magnets are placed adjacent to each other along the second direction and have alternating polarization directions. A secondary magnet is arranged on each end with respect to the first direction of the first magnet group. The secondary magnets of the second magnet group overlap with at least part of a turning section of the at least one coil assembly seen from a third direction which is perpendicular to the first direction and the second direction.
G03F 7/00 - Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printed surfacesMaterials therefor, e.g. comprising photoresistsApparatus specially adapted therefor
19.
METHOD OF DETERMINING A SAMPLING SCHEME. ASSOCIATED APPARATUS AND COMPUTER PROGRAM
Disclosed is a method of configuring a sampling scheme for a metrology operation comprising: obtaining metrology data relating to measurements on a substrate; fitting a first model to the metrology data to obtain a first fitted model; evaluating the first fitted model on an evaluation grid; calculating a noise propagation coefficient for each candidate measurement location of a plurality of candidate measurement locations based on said evaluation, and configuring the sampling scheme based on the calculation step.
G03F 7/00 - Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printed surfacesMaterials therefor, e.g. comprising photoresistsApparatus specially adapted therefor
G03F 9/00 - Registration or positioning of originals, masks, frames, photographic sheets or textured or patterned surfaces, e.g. automatically
20.
COUNTERACTING INTERFERING MAGNETIC FIELDS IN A CHARGED-PARTICLE BEAM SYSTEM
An apparatus for generating a counteracting magnetic field for a charged-particle beam apparatus comprises a coil, individual coils or pairs of coils spaced apart and arranged about each one of an X axis, a Y axis, or a Z axis. A controller may be configured to control the pairs of coils to generate a substantially uniform magnetic field at a central location between the pairs of coils.
A metrology tool for determining one or more parameters of interest (e.g. overlay) of a structure on an object (e.g. a wafer). The metrology tool comprises: a module for at least partially defining an aperture; projection optics; detection optics; and a detector. The module for at least partially defining an aperture is positionable so as to receive a radiation beam and to transmit a modified radiation beam. The projection optics is arranged to project modified radiation output by the module onto a beam spot region in which the structure is positionable. The detection optics is arranged to receive at least a portion of radiation scattered by the structure. The detector is operable to determine one or more parameters from the received scattered radiation. The module is configured such that a size and/or shape of the aperture defined by the module is dependent on a wavelength of the received radiation.
DD) smaller than 095, preferably smaller than 0.8, particularly preferred smaller than 0,4 at a roll-off frequency in the range of 0–3000 Hz, preferably in a range of 0-1000 Hz, particularly preferred in a range of 0–500 Hz. Additionally, the invention relates to a semiconductor apparatus (1,101), preferably a projections exposure apparatus (1,101), particularly preferred a EUV projection exposure apparatus (1) comprising at least one assembly (70) according to one the described embodiments. Furthermore, the invention also refers to a method for designing a pipe (76) for an assembly (70) for a fluid line (39,42,43) for a semiconductor apparatus (1,101) comprising at least one damping section (72) to damp acoustic vibrations within a fluid (79), the damping section (72) comprising the pipe (76) comprising a viscoelastic material the method comprising the following steps: - Determining a desired transfer factor VD and a desired roll-off frequency frolloff for a given fluid, - Determining a material frequency fmaterial based on the roll-off frequency frolloff and the transfer factor VD, - Determining the material and geometric parameters of the pipe (76) in such a way that the equation (A) applies, whereby (B).
G03F 7/00 - Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printed surfacesMaterials therefor, e.g. comprising photoresistsApparatus specially adapted therefor
F16L 11/115 - Hoses, i.e. flexible pipes made of rubber or flexible plastics with corrugated wall having reinforcements not embedded in the wall
23.
METHOD AND SYSTEM FOR EUV ENERGY ADJUSTMENT VIA RAREFACTION PULSE ADJUSTMENT
A method can adjust an extreme ultraviolet (EUV) energy output of an EUV light generation system. The method can include irradiating a droplet with a pre-pulse laser beam suitable to reshape the droplet into a target. The method can further include irradiating the target with a rarefaction pulse laser beam suitable to modify one or more of a density of the target or an absorption characteristic of the target. The method can further include irradiating the modified target with a main pulse laser beam suitable to generate EUV light. The method can further include measuring an EUV energy output of the EUV light with a sensor. The method can further include adjusting at least one of the rarefaction pulse laser beam or the main pulse laser beam in response to the measured EUV energy output.
Methods and systems for determining mask rule check (MRC) violations associated with mask features based on a local feature dimension (LFD) of mask features. A detector is placed at a first location of a mask feature and its size is varied until it is in contact with a second location of the mask feature. The size of the detector when it is in contact with the second location is determined as an LFD of a portion of the mask feature. For example, the LFD may be determined as a function of a radius of a circular detector. An MRC violation may be detected by comparing the LFD with an LFD specification in the MRC. For example, an MRC violation may be detected when the LFD of the portion is lesser than a minimum LFD or greater than a maximum LFD specified in the MRC.
G03F 1/36 - Masks having proximity correction featuresPreparation thereof, e.g. optical proximity correction [OPC] design processes
G01B 21/20 - Measuring arrangements or details thereof, where the measuring technique is not covered by the other groups of this subclass, unspecified or not relevant for measuring contours or curvatures, e.g. determining profile
G03F 7/00 - Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printed surfacesMaterials therefor, e.g. comprising photoresistsApparatus specially adapted therefor
25.
SYSTEM AND METHOD FOR IMPROVING IMAGE QUALITY DURING INSPECTION
Systems, apparatuses, and methods for improving image quality. In some embodiments, a method may include obtaining a plurality of images of an area of a sample; determining via a phase diversity analysis: ma plurality of focus-related values, wherein each focus-related value of the plurality of focus-related values is associated with each image of the plurality of images; a maximum likelihood estimate of the plurality of images; and generating a focus-corrected image of the area based on the determined plurality of focus-related values and the determined maximum likelihood estimate.
A method of determining a mask design, the method includes generating a continuous multimodal representation of a probability distribution of a target design in at least a portion of a latent space. The latent space includes a distribution of feature variants that can be used to generate mask designs based on the target design. The method includes selecting a variant from the continuous multimodal representation in the latent space. The variant includes a latent space representation of one or more features to be used to determine the mask design. The method includes determining the mask design based on the target design and the variant.
The present disclosure relates to charged particle devices for projecting charged particles towards a sample and methods of assessing a sample using charged particles. A charged particle optical element directs beams of charged particles towards a sample. The charged particle optical element comprising a plate in which is defined beam apertures and a plurality of vent apertures. A beam tube defines an inner tube volume comprising paths up-beam of the plate of charged particles of the beams, and an outer tube region that is outside of the beam tube. The beam apertures are for passage towards the sample of charged particles of the beams, from the inner tube volume to a down-beam volume on an opposite side of the plate to the inner tube volume. Vent apertures fluidically connect the down-beam volume to the outer tube region.
A method for determination of a parameter of interest in a manufacturing process. For a measurement structure including a first grating with a first pitch and a second grating with a second pitch, a sensitivity of a Moiré interference pattern component is determined. The sensitivity is determined with respect to the parameter of interest in the manufacturing process. The measurement structure is evaluated, based on the sensitivity, for use in measuring the parameter of interest in the manufacturing process. A method of measuring the parameter of interest based on the measurement structure is described. A method of generating parameters of the measurement structure based on evaluation of the measurement structure for measurement of the parameter of interest is also described.
G03F 7/00 - Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printed surfacesMaterials therefor, e.g. comprising photoresistsApparatus specially adapted therefor
29.
METHOD AND SYSTEM OF OVERLAY MEASUREMENT USING CHARGED-PARTICLE INSPECTION APPARATUS
A system, including: a charged-particle beam inspection apparatus configured to scan a sample that includes a target with a plurality of pattern layers; and a controller including circuitry, configured to: obtain detection data in response to a scan of the target; and determine one or more characteristics of the sample in dependence on the obtained detection data and a model, wherein, for each of the plurality of pattern layers of the target, the model has a term that is dependent on the properties of the pattern layer.
G03F 7/00 - Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printed surfacesMaterials therefor, e.g. comprising photoresistsApparatus specially adapted therefor
30.
SYSTEMS AND METHODS FOR OPTIMIZING METROLOGY MARKS
Systems, methods, and computer software are disclosed for optimizing a metrology mark. One method includes simulating an etch process based on one or more selected from: a pattern density, a microloading effect induced intra-mark variation, or a sensitivity of intra-mark variation to etch chemistry. The method can predict etch-induced process effects on the metrology mark based on the simulation of the etch process and optimize the metrology mark based on the predicted etch-induced process effects.
G03F 9/00 - Registration or positioning of originals, masks, frames, photographic sheets or textured or patterned surfaces, e.g. automatically
G03F 7/00 - Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printed surfacesMaterials therefor, e.g. comprising photoresistsApparatus specially adapted therefor
31.
SUBSTRATE HOLDER FOR USE IN A LITHOGRAPHIC APPARATUS
A substrate holder, for a lithographic apparatus, having a main body, a plurality of support elements to support a substrate and a seal unit. The seal unit may include a first seal positioned outward of and surrounding the plurality of support elements. A position of a substrate contact region of an upper surface of the first seal may be arranged at a distance from the plurality of support elements sufficient enough such that during the loading/unloading of the substrate, a force applied to the first seal by the substrate is greater than a force applied to the plurality of support elements by the substrate. A profile of the contact region, in a cross section through the seal, may have a shape which is configured such that during the loading/unloading of the substrate, the substrate contacts the seal via at least two different points of the profile.
G03F 7/00 - Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printed surfacesMaterials therefor, e.g. comprising photoresistsApparatus specially adapted therefor
H01L 21/687 - Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereofApparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches
32.
STOCHASTIC-AWARE SOURCE MASK OPTIMIZATION BASED ON EDGE PLACEMENT PROBABILITY DISTRIBUTION
A method for stochastic-aware source mask optimization is described. A probability distribution for edge placement which accounts for stochasticity is determined. Based on the probability distribution, the source configuration, mask configuration, or the combination thereof can be optimized for a lithography process. The probability distribution for edge placement can account for a distribution of stochastic effect on edge placement, including a stochastic edge placement error contribution. The probability distribution of edge placement can be compared to a profile to determine a simulated distribution of edge placement error. A cost function, which accounts for the probability distribution of edge placement, can be used to optimize the source configuration, the mask configuration, of the combination thereof.
G03F 7/00 - Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printed surfacesMaterials therefor, e.g. comprising photoresistsApparatus specially adapted therefor
33.
APPARATUS FOR AND METHOD OF CONTROLLING DROPLET GENERATOR PERFORMANCE
Apparatus for and method of controlling formation of droplets used to generate EUV radiation. The droplet source includes a fluid exiting an nozzle and a sub-system having an electro-actuatable element producing a disturbance in the fluid. The droplet source produces a stream that breaks down into droplets that in turn coalesce into larger droplets as they progress towards the irradiation region. The electro-actuatable element is driven by a control signal having a sine wave component and a square wave component. Various parameters such as a phase difference between the sine wave component and the square wave component are measured and controlled to minimize the formation of noncoalesced satellite droplets in the stream.
H05G 2/00 - Apparatus or processes specially adapted for producing X-rays, not involving X-ray tubes, e.g. involving generation of a plasma
G03F 7/00 - Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printed surfacesMaterials therefor, e.g. comprising photoresistsApparatus specially adapted therefor
A method of determining contamination of an optical sensor in a lithographic apparatus, the method including projecting patterned reflected EUV radiation towards the optical sensor and thereby forming an aerial image of a pattern, moving the optical sensor relative to the patterned reflected EUV radiation such that an intensity of EUV radiation measured by the optical sensor varies as a function of the position of the optical sensor, wherein the intensity measured by the optical sensor passes through a minimum, and using the measured intensity to measure contamination of the optical sensor.
G01N 21/94 - Investigating contamination, e.g. dust
G01N 21/88 - Investigating the presence of flaws, defects or contamination
G03F 7/00 - Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printed surfacesMaterials therefor, e.g. comprising photoresistsApparatus specially adapted therefor
G03F 9/00 - Registration or positioning of originals, masks, frames, photographic sheets or textured or patterned surfaces, e.g. automatically
Disclosed is a method of monitoring an exposure process, comprising: obtaining a set of first monitoring data relating to a performance of a monitoring action of the exposure process using at least one first reference structure, the at least one first reference structure being in use for the monitoring action during exposures; obtaining at least one set of second monitoring data relating to a performance of the monitoring action of the exposure process using at least one second reference structure, the at least one second reference structure not being in use for the monitoring action during exposures; comparing the set of first monitoring data to the at least one set of second monitoring data; and determining, based on the comparing, whether to change from the at least first reference structure to the at least one second reference structure for the monitoring action during further exposures
G03F 7/00 - Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printed surfacesMaterials therefor, e.g. comprising photoresistsApparatus specially adapted therefor
G03F 9/00 - Registration or positioning of originals, masks, frames, photographic sheets or textured or patterned surfaces, e.g. automatically
Disclosed is a metrology apparatus and method. The method comprises: obtaining metrology data relating to a measurement obtained by illuminating a periodic structure with illumination and capturing the resultant scattered radiation from said periodic structure at a detection plane, said scattered radiation passing through at least one detection angularly resolved plane between said periodic structure and detection plane, wherein said illumination comprises an even plurality of monopoles arranged within an illumination angularly resolved plane in one or more coherence groups, wherein each coherence group comprises a respective at least one mutually coherent dipole of said even plurality of monopoles which are all mutually coherent and wherein zeroth order reflection corresponding to all but one monopole for each said one or more coherence groups is blocked or attenuated within said detection angularly resolved plane; non-iteratively reconstructing a field of said scattered radiation.
G03F 7/00 - Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printed surfacesMaterials therefor, e.g. comprising photoresistsApparatus specially adapted therefor
37.
FORMING A REFERENCE IRRADIANCE PATTERN ON A DETECTOR
Described herein is a method comprising: illuminating an optical element with a reference illumination, wherein the optical element is configured to produce, from the reference illumination, a plurality of reference irradiance beams incident on a detector to form a reference irradiance pattern on the detector, the reference irradiance pattern comprising a plurality of reference irradiance spots; and determining a position related parameter of the detector relative to the optical element based on the plurality of reference irradiance spots. A computer program product is also described. Additionally described herein is an apparatus comprising a processor configured to determine a position related parameter of a detector relative to an optical element based on a plurality of reference irradiance spots.
G03F 7/00 - Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printed surfacesMaterials therefor, e.g. comprising photoresistsApparatus specially adapted therefor
H04N 23/54 - Mounting of pick-up tubes, electronic image sensors, deviation or focusing coils
38.
Lithographic apparatus, device manufacturing method, and method of correcting a mask
A lithographic apparatus includes a mask correction system configured to controllably and locally alter a property of a mask, for example transmissivity, transmissivity to a particular polarization state, birefringence and/or geometry. The mask correction system, in an embodiment, directs a beam of radiation onto a spot of the mask, the mask being scanned relative to the mask correction system. The mask correction system may include an arrangement to irradiate multiple spots on the mask substantially simultaneously.
G03B 27/52 - Projection printing apparatus, e.g. enlarger, copying camera Details
G03F 1/70 - Adapting basic layout or design of masks to lithographic process requirements, e.g. second iteration correction of mask patterns for imaging
G03F 7/00 - Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printed surfacesMaterials therefor, e.g. comprising photoresistsApparatus specially adapted therefor
A new (lithographic) method of forming a feature on a substrate (e.g. a wafer) comprises performing a plurality of sequential exposures, each of the plurality of exposures comprising forming an image of the feature in the vicinity of the substrate. A focal position of the image relative to the substrate is different for at least two of the plurality of exposures. There is a range of focal positions of the image relative to the substrate that is not used during any of the plurality of exposures and which lies between the focal positions of the image relative to the substrate for two of the plurality of exposures. The method according to the first aspect of the present disclosure is particularly advantageous for forming isolated features on a substrate such as isolated contacts and isolated spaces.
G03F 7/00 - Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printed surfacesMaterials therefor, e.g. comprising photoresistsApparatus specially adapted therefor
A fuel droplet nozzle assembly comprises a first hollow body and a piezoelectric element. The first hollow body comprises an inlet and an outlet and a bore extending between the inlet and the outlet. In use, fuel (for example liquid tin) may be provided into the first hollow body via the inlet under pressure. The piezoelectric element surrounds and is in direct or indirect contact with the first hollow body. In use, the piezoelectric element may be configured to squeeze the first hollow body at an excitation frequency and can be used to generate sound waves in the first hollow body. The fuel droplet nozzle assembly may further comprise a second hollow body surrounding and in direct or indirect contact with the piezoelectric element. Additionally or alternatively, the first hollow body may be a composite body formed from at least: an outer support portion formed from metal; and an inner portion formed from a glass material.
The disclosure provides a device and method for measuring contamination. The device comprises: a layer of a non-conducting material; a layer of a semi-metal arranged on the layer of the non-conducting material; at least one set of electrodes, each electrode being in electrical contact to the layer of the semi-metal; and an electrical source of a voltage or current connected to the at least two electrodes. The semi-metal may be graphene. The non-conducting material may be hexagonal boron nitride. The method includes measuring a change in resistivity of the layer of the semi-metal using a voltage and/or a current source connected to the at least two electrodes.
G03F 7/00 - Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printed surfacesMaterials therefor, e.g. comprising photoresistsApparatus specially adapted therefor
G01B 7/31 - Measuring arrangements characterised by the use of electric or magnetic techniques for measuring angles or tapersMeasuring arrangements characterised by the use of electric or magnetic techniques for testing the alignment of axes for testing the alignment of axes
G01N 27/04 - Investigating or analysing materials by the use of electric, electrochemical, or magnetic means by investigating impedance by investigating resistance
G03F 9/00 - Registration or positioning of originals, masks, frames, photographic sheets or textured or patterned surfaces, e.g. automatically
42.
HOLLOW-CORE PHOTONIC CRYSTAL FIBER BASED OPTICAL COMPONENT FOR BROADBAND RADIATION GENERATION
Optical components and methods of manufacture thereof. A first optical component has a hollow-core photonic crystal fiber includes internal capillaries for guiding radiation and an outer capillary sheathing the internal capillaries; and at least an output end section having a larger inner cross-sectional dimension over at least a portion of the output end section than an inner cross-sectional dimension of the outer capillary along a central portion of the hollow-core photonic crystal fiber prior to the output end section. A second optical component includes a hollow-core photonic crystal fiber and a sleeve arrangement.
C03B 37/15 - Re-forming fibres or filaments with heat application, e.g. for making optical fibres
F21V 8/00 - Use of light guides, e.g. fibre optic devices, in lighting devices or systems
G03F 7/00 - Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printed surfacesMaterials therefor, e.g. comprising photoresistsApparatus specially adapted therefor
G03F 9/00 - Registration or positioning of originals, masks, frames, photographic sheets or textured or patterned surfaces, e.g. automatically
Disclosed is a method of determining at least one bonding parameter of interest relating to a feature on a substrate comprising: obtaining angularly resolved metrology data relating to a measurement of said feature following illumination of said feature with a radiation beam and detecting radiation scattered by said feature at an angularly resolved plane; obtaining at least one trained model being operable to relate said angularly resolved metrology data to said bonding parameter of interest; and using the trained model to derive the bonding parameter of interest based on the angularly resolved metrology data.
H01L 21/66 - Testing or measuring during manufacture or treatment
G01N 23/20 - Investigating or analysing materials by the use of wave or particle radiation, e.g. X-rays or neutrons, not covered by groups , or by using diffraction of the radiation by the materials, e.g. for investigating crystal structureInvestigating or analysing materials by the use of wave or particle radiation, e.g. X-rays or neutrons, not covered by groups , or by using scattering of the radiation by the materials, e.g. for investigating non-crystalline materialsInvestigating or analysing materials by the use of wave or particle radiation, e.g. X-rays or neutrons, not covered by groups , or by using reflection of the radiation by the materials
44.
MAINTAINING AN OPTICAL FOCUS OF AN OPTICAL ELEMENT FOR IMPROVING PERFORMANCE OF A METROLOGY SYSTEM
A system includes an optical element, a distance sensor, a controller, and an actuator. The optical element faces a wafer. The optical element is spaced apart from the wafer by a focus distance. The distance sensor can measure a distance to the wafer. The distance sensor can be positioned off axis with respect to an optical axis of the optical element. The controller can be coupled to the actuator and can be configured to generate a control signal to maintain the focus distance. The control signal can be generated based on the measured distance by the distance sensor. The actuator coupled to the optical element and configured to control a position of the optical element based on the control signal.
An interferometer system comprises: - first and second splitters to split first and second beams received from first and second input terminals in first measurement and reference beams and second measurement and reference beams - a second combiner to combine the second measurement and reference beams and to direct the combined beams to a second detector, - a coupling out device to direct the first measurement beam to a retro reflector, a coupling in device to receive the first measurement beam reflected by the retroreflector, - a first combiner to combine the first measurement beam received via a first measurement beam propagation path from the coupling in device and the first reference beam received from the second splitter via a first reference beam propagation path, and to direct the combined measurement beams to a first detector.
G01B 9/02015 - Interferometers characterised by the beam path configuration
G03F 7/00 - Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printed surfacesMaterials therefor, e.g. comprising photoresistsApparatus specially adapted therefor
09 - Scientific and electric apparatus and instruments
Goods & Services
Electric and electronic process control apparatus for the production of semiconductor components, including specifically particle emitters, light sources, detectors, controllers and holders for semiconductor wafers; computer hardware and software for inspection of semiconductor wafers.
47.
TRANSIENT DEFECT INSPECTION USING AN INSPECTION IMAGE
An improved method and system for transient defect inspection using an inspection image are disclosed. The method comprises acquiring a plurality of inspection images, generating an average image of the plurality of inspection images, detecting a first type defect in the average image, determining a mask area corresponding to the first type defect, and determining whether the plurality of inspection images have a second type defect in a non-masked area.
Systems, apparatuses, and methods are provided for manufacturing a thermally actuated cooling apparatus. An example method can include providing a cooling member. The cooling member can include a contact plate, fins extending from the contact plate in a first direction, and a protuberance extending from the contact plate in a second direction. Subsequently, the example method can include mounting the protuberance to a part of an extreme ultraviolet (EUV) radiation source. The contact plate can include a first coefficient of thermal expansion (CTE) that is greater than a second CTE of the part.
G03F 7/00 - Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printed surfacesMaterials therefor, e.g. comprising photoresistsApparatus specially adapted therefor
A method of configuring a detector of a charged particle assessment system, the detector having an array of sensing elements configured to generate electrical signals in response to incident secondary particles or backscattered particles from a sample, the method comprising:
A method of configuring a detector of a charged particle assessment system, the detector having an array of sensing elements configured to generate electrical signals in response to incident secondary particles or backscattered particles from a sample, the method comprising:
selecting a first subset of the set of sensing elements for activation based on data derived from a predicted distribution of secondary particles or backscattered particles; and selecting a second subset of the set of sensing elements for deactivation based on the predicted distribution;
A method of configuring a detector of a charged particle assessment system, the detector having an array of sensing elements configured to generate electrical signals in response to incident secondary particles or backscattered particles from a sample, the method comprising:
selecting a first subset of the set of sensing elements for activation based on data derived from a predicted distribution of secondary particles or backscattered particles; and selecting a second subset of the set of sensing elements for deactivation based on the predicted distribution;
wherein the first subset has a different predicted ratio of incident secondary particles to incident backscattered particles than the second subset.
G01N 23/2251 - Investigating or analysing materials by the use of wave or particle radiation, e.g. X-rays or neutrons, not covered by groups , or by measuring secondary emission from the material using electron or ion microprobes using incident electron beams, e.g. scanning electron microscopy [SEM]
In a lithographic process, product units such as semiconductor wafers are subjected to lithographic patterning operations and chemical and physical processing operations. Alignment data or other measurements are made at stages during the performance of the process to obtain object data representing positional deviation or other parameters measured at points spatially distributed across each unit. This object data is used to obtain diagnostic information by performing a multivariate analysis to decompose a set of vectors representing the units in the multidimensional space into one or more component vectors. Diagnostic information about the industrial process is extracted using the component vectors. The performance of the industrial process for subsequent product units can be controlled based on the extracted diagnostic information.
G03F 7/00 - Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printed surfacesMaterials therefor, e.g. comprising photoresistsApparatus specially adapted therefor
G03F 9/00 - Registration or positioning of originals, masks, frames, photographic sheets or textured or patterned surfaces, e.g. automatically
G06F 16/26 - Visual data miningBrowsing structured data
Disclosed is a metrology method comprising: obtaining metrology data relating to a measurement obtained by illuminating a periodic structure comprising at least one pitch with partial coherent illumination comprising a wavelength and capturing the resultant scattered radiation from said periodic structure at a detection plane, said scattered radiation passing through at least one angularly resolved plane between said periodic structure and detection plane, said angularly resolved plane comprising at least one mask edge; non-iteratively reconstructing a field of said scattered radiation; using said reconstructed field to determine a parameter of interest of the structure; and in an initial step: selecting said wavelength and a maximum of said at least one pitch such that the wavelength- over-pitch ratio is greater than a first distance in said angularly resolved plane.
G03F 7/00 - Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printed surfacesMaterials therefor, e.g. comprising photoresistsApparatus specially adapted therefor
52.
APPARATUS AND METHOD FOR SECURING A DIE FOR DIE BONDING
An apparatus and method for securing an at least partially transparent carrier to a chuck are provided, wherein the chuck and/or chucking mechanism is at least locally substantially transparent to radiation used to release one or more donor die from the carrier.
H01L 21/67 - Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereofApparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components
H01L 21/683 - Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereofApparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components for supporting or gripping
53.
LITHOGRAPHIC APPARATUS AND METHOD WITH FAST ALIGNMENT MEASUREMENTS USING DEFORMATION PREDICTION MODELS
A lithographic apparatus includes an illumination system, a substrate support structure including a sensor, and a computing system. The illumination system generates a beam of radiation to illuminate a pattern of a patterning device. The patterning device includes reference marks. The substrate support structure performs alignment operations of substrates during fabrication cycles. Each of the fabrication cycles comprises an exposure operation on a substrate and a substrate alignment operation. The sensor performs measurements of the reference marks for the substrate alignment operation of each of the fabrication cycles. The computing system forecasts a distortion of the patterning device using a distortion prediction model and one or more parameters of the beam. The computing system also prompts the sensor to waive one or more of the measurements. The computing system also adjusts the alignment operations using the forecasted distortion to offset the waived one or more of the measurements.
G03F 7/00 - Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printed surfacesMaterials therefor, e.g. comprising photoresistsApparatus specially adapted therefor
G03F 9/00 - Registration or positioning of originals, masks, frames, photographic sheets or textured or patterned surfaces, e.g. automatically
54.
SYSTEMS AND METHODS OF ENERGY-BASED FILTERING AND DETECTION OF CHARGED PARTICLES
Systems and methods of imaging a sample using a charged-particle beam apparatus are disclosed. The charged-particle beam apparatus may comprise an energy discrimination device configured to filter incoming signal charged-particles having a plurality of ranges of energy levels. The energy discrimination device may include an electromagnetic charged-particle deflector configured to deflect a path of the incoming signal charged-particles based on an energy level of the incoming signal charged-particles; an aperture formed on an aperture plane, the aperture configured to allow a portion of the incoming signal charged-particles exiting the electromagnetic charged-particle deflector to pass through based on the deflection; and a control lens located upstream from the electromagnetic charged-particle deflector and configured to focus the incoming signal charged-particles on the aperture plane.
A pellicle membrane including emissive crystals in a matrix containing at least one element which forms a chemical bond with silicon having a bond dissociation energy of at least 447 kJ mol−1. A method of manufacturing such a pellicle membrane, a pellicle assembly including such a pellicle membrane and a lithographic apparatus including such a pellicle assembly or pellicle membrane. Also the use of molybdenum silicon sulphide, oxide, selenide, or fluoride in a pellicle membrane. The use of such a pellicle membrane, pellicle assembly or lithographic apparatus in a lithographic apparatus or method.
Methods, apparatuses, and software are disclosed for optimization of a source and/or mask as used in lithographic manufacturing and patterning processes. One method includes determining a first pupil having a central obscuration (CO), determining a diffraction order (DO) based on a target design and a mask model, determining a first diffraction pattern (DP) based on the DO and the first pupil, the first DP including overlapping regions of diffracted light, determining a second DP based on the DO and the first pupil, and determining an initial pupil based on the first DP and the second DP, the initial pupil including at least some of the overlapping regions.
G03F 7/00 - Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printed surfacesMaterials therefor, e.g. comprising photoresistsApparatus specially adapted therefor
G03F 1/68 - Preparation processes not covered by groups
57.
DEFORMABLE OPTICAL COMPONENT ACTUATION AND MODULATION IN A METROLOGY SYSTEM
A metrology apparatus includes an optical component, a wafer, a sensor, and a processor. The optical component, which can actuate between multiple aberration modes, provides a wavefront correction to light incident on the optical component. Light reflected and/or transmitted by the optical component is scattered by a target on the wafer. The scattered light forms a measurement signal that is collected by a sensor. The processor uses the measurement signal to determine an aberration correction for the optical component.
G03F 7/00 - Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printed surfacesMaterials therefor, e.g. comprising photoresistsApparatus specially adapted therefor
58.
AN ILLUMINATION AND DETECTION ARRANGEMENT AND A METHOD FOR A METROLOGY ARRANGEMENT
Disclosed is an illumination and detection arrangement for a lithographic or inspection apparatus, comprising: a plurality of individually configurable illumination sources located in an illumination plane, each being operable to emit illumination radiation; an objective lens defining an objective NA area and configured to receive the illumination radiation, focus it onto a structure in an object plane, and subsequently collect radiation scattered from the structure upon illumination; and at least one image sensor located in a detection plane and configured to detect at least one portion of the scattered radiation collected by the objective lens and record an image associated with the structure; wherein the at least one portion of the scattered radiation either is detected at or passes through the illumination plane.
G03F 7/00 - Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printed surfacesMaterials therefor, e.g. comprising photoresistsApparatus specially adapted therefor
An apparatus for use in a metrology apparatus comprises: selection optics; and a plurality of beam-modifying modules. The selection optics is arranged to receive an input radiation beam and is configurable so as direct the radiation beam to any one of the plurality of beam-modifying modules. Each of the plurality of beam-modifying modules is arranged to control the same at least one attribute of the radiation beam (for example wavelength, polarization, size, shape etc.). The selection optics may be arranged to receive secondary radiation output by any one of the plurality of beam-modifying modules and may be configurable so as direct the secondary radiation received from any one of the plurality of beam-modifying modules to a common output. A timescale for switching between two configurations of any one of the beam-modifying module may be larger than a timescale for switching between two configurations of the selection optics.
An apparatus includes an illumination system, a projection system, and an inspection system. The illumination system illuminates a pattern of a patterning device. The projection system projects an image of the pattern onto a substrate. The inspection system includes a radiation source, an optical element, and a detector. The radiation source generates radiation. The optical element directs the radiation toward a target on the substrate. The detector includes a photosensitive device and a squarecore optical fiber. The photosensitive device receives at least a portion of radiation scattered by the target and generates a measurement signal based on the received portion of the radiation. The squarecore optical fiber is coupled to the photosensitive device, guides the portion of the radiation to the photosensitive device, and homogenizes the guided portion of the radiation such that an intensity cross-section of the received portion of the radiation at the photosensitive device is approximately uniform.
G03F 7/00 - Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printed surfacesMaterials therefor, e.g. comprising photoresistsApparatus specially adapted therefor
A substrate including a target. The target including a plurality of sub-targets, the plurality of sub-targets including at least a first sub-target and second sub-target, each of the plurality of sub-targets including at least one subsegmented periodic structure having repetitions of a first region and a second region, wherein at least one of the first regions or second regions comprise subsegmented regions formed of periodic sub-features. The first sub-target includes subsegmentation characteristics for its subsegmented regions and the second sub-target comprises second subsegmentation characteristics for its subsegmented regions, the first subsegmentation characteristics and second subsegmentation characteristics being different in terms of at least one subsegmentation parameter.
G03F 7/00 - Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printed surfacesMaterials therefor, e.g. comprising photoresistsApparatus specially adapted therefor
62.
SYSTEMS, METHODS, AND SOFTWARE FOR MULTILAYER METROLOGY
Methods, apparatuses, and software are disclosed for multilayer metrology. One method includes obtaining image data of an object with an SEM system, with the image data acquired at multiple landing energy levels. A composed image is generated by performing pixel-by-pixel image processing of the image data. A metrology characteristic is determined from the composed image and metrology is performed on a feature based on the metrology characteristic.
G01N 23/2251 - Investigating or analysing materials by the use of wave or particle radiation, e.g. X-rays or neutrons, not covered by groups , or by measuring secondary emission from the material using electron or ion microprobes using incident electron beams, e.g. scanning electron microscopy [SEM]
An assembly for movably supporting a mirror comprises: a mirror; and one or more deformable members. A first end of the or each deformable member defines a support portion and a second end of the or each deformable member is attached (either directly or indirectly to the mirror (for example on a rear surface of the mirror). The or each deformable member comprises a first actuator and a second actuator, the first and second actuators being independently addressable. Actuation of the first actuator moves the mirror relative to the support portion in a first direction and actuation of the second actuator moves the mirror relative to the support portion in a second direction that is opposite to the first direction. In use, the support portion may be attached or fixed to a support and the first and second actuators can be used to move the mirror relative to said support.
G02B 26/08 - Optical devices or arrangements for the control of light using movable or deformable optical elements for controlling the direction of light
G03F 7/00 - Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printed surfacesMaterials therefor, e.g. comprising photoresistsApparatus specially adapted therefor
64.
INTERFEROMETER SYSTEM WITHOUT WALK-OFF, METHOD FOR USING AN INTERFEROMETER SYSTEM
The present disclosure provides an interferometer system, comprising: an input terminal configured to receive an input beam from a source of radiation, a polarizing beam splitter which is configured to reflect a first portion of the input beam to follow a measurement path and to reflect a second portion of the input beam to follow a reference path, wherein the measurement path is directed towards a first optical reflector mounted on a movable measurement target and back to the beam splitter, then towards a translating reflector and back to the beam splitter, and wherein the reference path is directed towards the translating reflector and back to the beam splitter.
G01B 9/02018 - Multipass interferometers, e.g. double-pass
G01B 9/02061 - Reduction or prevention of effects of tilts or misalignment
G03F 7/00 - Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printed surfacesMaterials therefor, e.g. comprising photoresistsApparatus specially adapted therefor
65.
ILLUMINATION MODE SELECTOR AND ASSOCIATED OPTICAL METROLOGY TOOL
An illumination mode selector for use in an illumination branch of an optical metrology tool, and an associated optical metrology tool. The illumination mode selector includes a plurality of illumination apertures; and at least one polarization-changing optical element. Each of the illumination apertures and each of the at least one polarization-changing optical element are individually switchable into an illumination path of the optical metrology tool.
G03F 7/00 - Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printed surfacesMaterials therefor, e.g. comprising photoresistsApparatus specially adapted therefor
G01N 21/95 - Investigating the presence of flaws, defects or contamination characterised by the material or shape of the object to be examined
Systems and methods (400; 700) of detecting a defect (638) in a sample (250) using a charged-particle beam apparatus are disclosed. A method (400; 700) for inspecting a sample (250) using a charged-particle beam apparatus includes causing a region of the sample (250) comprising a plurality of features (632) to be charged to a first polarity, causing the region to switch from the first polarity to a second polarity at a switching condition, the switching condition comprising a switching dosage of primary charged particles, forming an inspection image of the region from signal charged particles generated upon interaction of the switching dosage of primary charged particles with the plurality of features (632), and determining whether a feature (632) of the plurality of features (632) is defective based on a gray level value of the feature (632) in the inspection image.
G01N 23/2251 - Investigating or analysing materials by the use of wave or particle radiation, e.g. X-rays or neutrons, not covered by groups , or by measuring secondary emission from the material using electron or ion microprobes using incident electron beams, e.g. scanning electron microscopy [SEM]
G01R 31/307 - Contactless testing using electron beams of integrated circuits
H01J 37/28 - Electron or ion microscopesElectron- or ion-diffraction tubes with scanning beams
G01N 33/00 - Investigating or analysing materials by specific methods not covered by groups
H01L 21/66 - Testing or measuring during manufacture or treatment
67.
SYSTEMS AND METHODS FOR GUIDED TEMPLATE MATCHING IN METROLOGY SYSTEMS
Systems and methods for guided template matching may include generating an image of a sample; per unit cell of the image, determining a size of a corresponding feature of the sample of the image; generating a template of each feature of the sample based on the determined size of the corresponding feature; matching the template to the corresponding feature of the image using a dynamic updating of the template with a range of adjustment factors; generating a final template based on the matching; and calculating a position of each feature based on the final template.
G06V 10/75 - Organisation of the matching processes, e.g. simultaneous or sequential comparisons of image or video featuresCoarse-fine approaches, e.g. multi-scale approachesImage or video pattern matchingProximity measures in feature spaces using context analysisSelection of dictionaries
G06V 10/25 - Determination of region of interest [ROI] or a volume of interest [VOI]
G06V 10/26 - Segmentation of patterns in the image fieldCutting or merging of image elements to establish the pattern region, e.g. clustering-based techniquesDetection of occlusion
A method of spatially aligning a patterning device and a substrate, wherein the patterning device and the substrate are separated by an optical path comprising one or more moveable optical components is described, the method comprising: —performing a plurality of alignment measurements, wherein for each alignment measurement the moveable optical components are arranged in respective predetermined positions, —combining the alignment measurements, and—spatially aligning the patterning device and the substrate based on the combination of the alignment measurements.
G03F 9/00 - Registration or positioning of originals, masks, frames, photographic sheets or textured or patterned surfaces, e.g. automatically
G03F 7/00 - Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printed surfacesMaterials therefor, e.g. comprising photoresistsApparatus specially adapted therefor
A broadband radiation device, comprising: a pulse shaper configured to impose a temporal profile onto an input pump pulse so as to generate a temporally-modulated pump pulse, the temporally-modulated pump pulse having a different temporal profile than the input pump pulse; and a hollow-core photonic crystal fiber (HC-PCF) having a hollow core for confining in use a working medium under a pressure, the HC-PCF being operable to receive the temporally-modulated pump pulse; wherein the temporally-modulated pump pulse is configured to be spectrally broadened by a soliton self-compression process to form broadband output radiation while propagating through the hollow core of the HC-PCF; and said temporal profile is configured so as to configure a spectrum of the broadband output radiation to have target spectrum characteristics.
G03F 7/00 - Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printed surfacesMaterials therefor, e.g. comprising photoresistsApparatus specially adapted therefor
G03F 9/00 - Registration or positioning of originals, masks, frames, photographic sheets or textured or patterned surfaces, e.g. automatically
70.
METHOD OF OPTIMIZING MAINTENANCE OF A LITHOGRAPHIC APPARATUS
A method of optimizing maintenance of a lithographic apparatus. The method including obtaining productivity data relating to a productivity of a lithographic apparatus and error metric data relating to the effect of a maintenance action on exposure performance. The productivity data and error metric data is used to determine such that a loss of productivity metric is reduced or minimized, one or both of: a number of layers to ramp down in production of integrated circuits prior to the maintenance action on the lithographic apparatus, the layers being lithographically exposed on each of a plurality of substrates using the lithographic apparatus; and/or a maintenance schedule metric relating to the frequency of performance of the maintenance action.
G03F 7/00 - Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printed surfacesMaterials therefor, e.g. comprising photoresistsApparatus specially adapted therefor
An electron-optical projection device for projecting a plurality of charged particle beams towards a sample, the device comprising a stack of plates comprising beam directing elements configured to project the plurality of charged particle beams towards a sample location on the sample, wherein at least one plate of the stack comprises a planar optical member configured to direct stimulation light towards the sample location so that the stimulation light is coincident with the plurality of charged particle beams, desirably coincident with the paths of the plurality of charged particle beams towards the sample location, desirably in the at least one plate comprising an optical member is defined a plurality of apertures for respective paths of a plurality charged particle beams.
A collector mirror (21) for lithography has a mirror substrate body (22) comprising a mirror basic body (23) and at least one mirror holding section (25). The mirror basic body (23) has a mirror reflection surface (24) for illumination light (4). The mirror holding section (25) is integrally formed with the mirror basic body (23). The mirror substrate body (22) has at the mirror holding section (25) a holding section wall thickness (H) which differs from a further wall thickness (W) of the mirror substrate body (22). A collector mirror assembly includes a collector mirror basic body with a basic body reflection surface for illumination light and a supporting body to mount the basic mirror body. The mirror basic body is mounted floating relative to the supporting body. A collector mirror and a collector mirror assembly including a mirror supporting body result with an improved reproducibility of a position relationship between such collector mirror on the one hand and a light source and/or a mirror supporting body on the other.
G02B 7/182 - Mountings, adjusting means, or light-tight connections, for optical elements for prismsMountings, adjusting means, or light-tight connections, for optical elements for mirrors for mirrors
Some embodiments are related to a method of or apparatus for forming an image of a buried structure that includes: emitting primary charged particles from a source; receiving a plurality of secondary charged particles from a sample; and forming an image based on received secondary charged particles that have an energy within a first range.
Disclosed is a method of updating of a first model by training a second model, the first model relating to a first process range and trained using a first set of measurement signals relating to a first set of structures. The method comprises: obtaining a second set of measurement signals, the second set of measurement signals relating to a second set of structures comprising said first set of structures or a subset thereof; and training the second model using said second set of measurement signals and corresponding reference values for the parameter of interest as training data. The training comprises optimizing a cost function in terms of the second model while constraining the second model to infer values for the parameter of interest from the first set of measurement signals.
G03F 7/00 - Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printed surfacesMaterials therefor, e.g. comprising photoresistsApparatus specially adapted therefor
75.
CHARGED-PARTICLE BEAM APPARATUS WITH LARGE FIELD-OF-VIEW AND METHODS THEREOF
Systems and methods of imaging a sample using a charged-particle beam apparatus are disclosed. The apparatus may include a charged-particle source configured to emit charged particles, an aperture plate configured to form a primary charged-particle beam along a primary optical axis from the emitted charged particles, a plurality of primary charged-particle beam deflectors configured to deflect the primary charged-particle beam to be incident on a surface of a sample to define a center of a field-of-view (FOV), and a controller including circuitry configured to apply a first excitation signal to a primary charged-particle beam deflector of the plurality of primary charged-particle beam deflectors to cause the primary charged-particle beam to scan a portion of the FOV of the sample, and apply a second excitation signal to cause the primary-charged particle beam deflector to compensate for an off-axis aberration of the primary charged-particle beam in the portion of the FOV.
A method for filtering false positives in a charged particle beam detector includes utilizing spatial information of detected charged particle landing events on the detector. A spatial distribution of detected charged particle landing events on the detector is compared to an expected distribution of landing events to determine the probability that the charged particle landing events are real.
A method of managing overlay impact caused by deformation of one or more encoder scales due to thermal impact of loading a reticle onto a reticle stage, the method comprising: obtaining data on a thermal profile of a reticle; simulating deformation of the one or more reticle stage encoder scales upon loading the reticle onto the reticle stage based on the thermal profile of the reticle to determine an impact the deformation will have on a patterning process; calculating, based on said simulation, a correction factor to correct the patterning process to manage the overlay impact, and applying correction factor to manage the overlay impact. Also provided is a method of imaging a substrate, a system, a device, and a non-transitory computer-readable medium configured to perform or execute such a method. Also disclosed is an apparatus for managing overlay impact as the use in a lithographic system, apparatus or method.
A method of measuring a tilt characteristic and a height characteristic in a charged particle system is disclosed. Time-division multiplexing may be employed to temporally separate measurements of a tilt characteristic and a height characteristic of a sample using one module. A first light beam may be reflected off a sample to measure a tilt characteristic and a second light beam may be reflected off a sample to measure a height characteristic. The first light beam may be triggered by an electrical signal associated with a falling edge of a clock signal and the second light beam may be triggered by an electrical signal associated with a rising edge of a clock signal.
A method of performing image position measurements. The method comprises performing an image position measurement in at least partial dependence upon an estimated image position and a measurement location uncertainty to determine a measured image position. The method comprises determining an image position error in at least partial dependence upon the measured image position 5 and the estimated image position. The method comprises determining an adapted measurement location uncertainty in at least partial dependence upon the image position error. The method comprises performing another image position measurement in at least partial dependence upon the adapted measurement location uncertainty.
An exposure apparatus comprising a substrate table and a projection system comprising: an optical element, an optical element support configured to support the optical element and a sensor configured to generate a signal indicative of an acceleration of the optical element support, a position control system configured to control a position of the target portion of the substrate, the position control system comprising: a dynamic sensitivity model defining the position of the optical element relative to the optical element support as a quasi static and dynamic function of the signal, and an optical sensitivity function defining a position error of the target portion as a function of an estimate of the position of the optical element relative to the optical element support.
A method for performing a lithographic apparatus setup calibration and/or drift correction for a specific lithographic apparatus of a population of lithographic apparatuses to be used in a manufacturing process for manufacturing an integrated circuit extending across a plurality of layers on a substrate. The method includes determining a spatial error distribution of an apparatus parameter across spatial coordinates on the substrate for each lithographic apparatus of the population of lithographic apparatuses and/or each layer of the plurality of layers; determining a reference distribution by aggregating each of the spatial error distributions to optimize the reference distribution such that a spatial distribution of a parameter of interest of the manufacturing process is co-optimized across the population of lithographic apparatuses and/or plurality of layers; and using the reference distribution as a target distribution for the apparatus parameter for each lithographic apparatus and/or layer.
G03F 7/00 - Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printed surfacesMaterials therefor, e.g. comprising photoresistsApparatus specially adapted therefor
82.
APPARATUS AND METHOD FOR DETERMINING AN ANGULAR REFLECTIVITY PROFILE
An apparatus comprising a multilayer structure configured to reflect electromagnetic radiation. The apparatus comprises a sensor configured to detect an angular distribution of the electromagnetic radiation after reflection from the multilayer structure. The apparatus comprises a processor configured to generate a first function at least partially based on the angular distribution of the electromagnetic radiation detected by the sensor. The processor is configured to compare the first function to a plurality of known functions associated with a plurality of known angular reflectivity profiles to identify a second function from the plurality of known functions that is most similar to the first function. The processor is configured to determine an angular reflectivity profile of the multilayer structure at least partially based on a known angular reflectivity profile that is associated with the second function.
G03F 7/00 - Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printed surfacesMaterials therefor, e.g. comprising photoresistsApparatus specially adapted therefor
Described herein is a method of training a model configured to predict whether a feature associated with an imaged substrate will be defective after etching of the imaged substrate and determining etch conditions based on the trained model. The method includes obtaining, via a metrology tool, (i) an after development image of the imaged substrate at a given location, the after development image including a plurality of features, and (ii) an after etch image of the imaged substrate at the given location; and training, using the after development image and the after etch image, the model configured to determine defectiveness of a given feature of the plurality of features in the after development image. In an embodiment, the determining of defectiveness is based on comparing the given feature in the after development image with a corresponding etch feature in the after etch image.
G03F 7/00 - Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printed surfacesMaterials therefor, e.g. comprising photoresistsApparatus specially adapted therefor
An extreme ultraviolet (EUV) system includes a vessel for generating radiation, a mirror, a gas flow assembly, and an exhaust. The system provides a first gas flow path in the vessel when the system is generating EUV radiation. The system provides a second gas flow path in the vessel when the system is not generating EUV radiation. The system can switch between the first gas flow path and the second gas flow path in a few milliseconds.
Disclosed herein is a computer system configured to perform a method of determining operational data for a control system of a lithographic apparatus, the method comprising: determining initial operational data for use in performing exposure processes on a substrate; repeatedly changing the initial operational data and determining one or more performance metrics of the changed operational data so as to determine changes to the initial operational data that improve the one or more performance metrics; and using operational data with an applied change so as to improve one or more of the performance metrics; wherein: the operational data includes the route of the substrate for performing the exposure processes and the movement of the substrate along the route; and the applied change to the operational data includes a change to the route and/or a change to the acceleration of the substrate along part of the route.
G03F 7/00 - Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printed surfacesMaterials therefor, e.g. comprising photoresistsApparatus specially adapted therefor
86.
DIRECTLY ACTUATED PATTERNING DEVICE FOR A LITHOGRAPHY APPARATUS
Existing lithography apparatuses use a reticle clamp to hold a reticle, and a chuck having actuators and position sensors, for a reticle stage. This requires substantial mass and infrastructure on reticle stage chucks. Advantageously, new reticle motion control systems and methods for a lithography apparatus are described. In contrast to existing lithography apparatuses, the new systems and methods utilize magnetically actuatable targets configured to be coupled to a reticle. Electromagnetic actuators are configured to apply magnetic forces to the magnetically actuatable targets for suspending the patterning device in space in a lithography apparatus, and actuating the magnetically actuatable targets to facilitate contactless precision movements of the reticle for semiconductor lithography.
A connection between an ion pump and a charged-particle beam apparatus includes a flexible conduit connecting the ion pump to the charged-particle beam apparatus. The flexible conduit may have a stiffness of less than 2E4 Newtons per meter. And the flexible conduit may be configured to maintain a vacuum level of less than 1E-6 Torr in the charged-particle beam apparatus.
A radiation source includes a chamber and a gas purification apparatus. The chamber includes an irradiation region. The gas purification apparatus includes a gas pathway structure to direct an unpurified gas having contaminants. The gas pathway structure includes a first pathway section and a second pathway section. The first pathway section includes contaminant capture elements to capture the contaminant to produce purified gas. At least a portion of the contaminant capture elements are disposed along a plane that is substantially normal to a drift direction of the unpurified gas at the plane. The second pathway section includes gas cooling elements disposed downstream of the contaminant capture elements. The gas cooling elements cool the purified gas. An orientation of the second pathway structure is such that a drift direction of the purified gas is different from the drift direction of the unpurified gas.
A radiation source includes a matter delivery system, an illumination source, and a jet flow generator. The matter delivery system directs target material to a target region. The illumination source irradiates the target material at the target region to generate radiation as an output of the radiation source. The jet flow generator directs a jet flow of a gas to the target region. The jet flow generator includes a flow injector and a diffuser. The flow injector adjusts a velocity profile of the jet flow. The diffuser adjusts a spread of the jet flow.
Disclosed is a method of predicting an effect of a potential substrate table maintenance action relating to a substrate table of a lithographic apparatus. The method comprises obtaining per-layer substrate loading distortion status data relating to a distortion of a substrate or group of substrates resulting from loading the substrate onto said substrate table when exposing one or more layers; obtaining at least one per-layer sensitivity value describing a sensitivity of a substrate loading distortion induced error metric to said substrate loading distortion status data for one or more respective layers on said substrate; and determining the effect of a potential substrate table maintenance action on said substrate loading distortion induced error metric based on said per-layer substrate loading distortion status data and said at least one per-layer sensitivity value.
A clamping system is described. The clamping system includes a membrane that functions as an intermediate layer between a reticle (or a wafer) and a clamp in a lithography apparatus. This membrane can be replaced in the field if it experiences wear, for example, instead of having to replace permanent components of the clamp, which is far more difficult. Because the membrane's dimensions are similar to those of a typical reticle, the membrane can be replaced using an existing reticle handling system that is a part of the lithography apparatus. The membrane is relatively thin and compliant compared to the clamp and/or the reticle such that the membrane may be configured to first couple to the reticle and conform to a shape of the reticle, and then couple to the clamp. This way the membrane forms a known tunable interface configured for coupling the reticle to the clamp.
G03F 7/00 - Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printed surfacesMaterials therefor, e.g. comprising photoresistsApparatus specially adapted therefor
92.
AUTOMATIC CORRECTION FOR HARDWARE-BASED SEM TOOL TIME OFFSET
A system and method for correction of image offsets in a multi-detector charged particle beam apparatus comprises a plurality of charged particle detectors and a hardware-based time offset correction system. The hardware-based time offset correction system is configured to correct a time difference among detection signals from the plurality of detectors based on a predetermined time offset. The predetermined time offset may be calibrated according to a calibration process.
A metrology method, and associated metrology apparatus, for determining one or more parameters of a periodic target on an object is disclosed. The periodic target is adjacent to a reference mark having a pitch equal to that of the periodic target. The method comprises projecting radiation onto the object such that a first portion of the radiation is incident on the periodic target and a second portion of the radiation is incident on the reference mark. The method further comprises measuring at least one interference pattern formed by contributions to a single diffraction order from both the first and second portions of radiation. The method further comprises determining the one or more parameters in dependence on the at least one interference pattern.
A lithographic apparatus is configured to perform a lithographic process. The lithographic apparatus comprises an illumination system configured to illuminate a reticle and a projection system configured to project an image of the reticle onto a substrate, wherein the illuminating and projection comprise the lithographic process. The lithographic apparatus further comprises a controller configured to reduce effects of non-uniformity of the reticle in the lithographic process. The controller is configured to determine a status of the reticle, identify a model from a plurality of models based on the status, and predict, using the identified model, a thermal deformation associated with the reticle.
Disclosed is an imaging method comprising obtaining a set of primary deconvolution kernels or a set of impulse responses relating to an optical system used to capture said image; obtaining said image signal, said image signal being subject to one or more imaging effects including at least one or more non-isoplanatic imaging effects; performing a low-rank approximation on said set of primary deconvolution kernels or impulse responses to determine respectively a set of deconvolution modes or a set of impulse response modes, each deconvolution mode comprising a modal secondary deconvolution kernel and a modal weight function and each impulse response mode comprising a modal impulse response and a modal inverse weight function; obtaining at least approximated imaging effect-free object information related to said object by applying said modal secondary deconvolution kernels and modal weight functions or said modal impulse responses and modal inverse weight functions to said image signal.
G03F 7/00 - Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printed surfacesMaterials therefor, e.g. comprising photoresistsApparatus specially adapted therefor
G01N 21/95 - Investigating the presence of flaws, defects or contamination characterised by the material or shape of the object to be examined
G06T 5/10 - Image enhancement or restoration using non-spatial domain filtering
Systems, non-transitory computer readable medium, and methods for determining one or more parameters used by an e-beam for an overlay measurement are disclosed. In some embodiments, the method comprises determining an acquisition time for the overlay measurement of a wafer stack based on a plurality of characteristics of the wafer stack and a plurality of backscattered electron (BSE) yields detected at a plurality of features on the wafer stack. The method also comprises determining the one or more parameters including a landing energy of the e-beam based on optimization of the acquisition time for the overlay measurement.
G01N 23/2251 - Investigating or analysing materials by the use of wave or particle radiation, e.g. X-rays or neutrons, not covered by groups , or by measuring secondary emission from the material using electron or ion microprobes using incident electron beams, e.g. scanning electron microscopy [SEM]
H01J 37/28 - Electron or ion microscopesElectron- or ion-diffraction tubes with scanning beams
97.
ELECTRICAL CONNECTOR FOR HIGH POWER IN A VACUUM ENVIRONMENT AND METHOD
The disclosure provides an electrical connector for high power in a low pressure environment, the connector comprising: a male connection part configured to be connected to a first power interface, a female connection part for receiving the male connection part and configured to be connected to a second power interface, a first conductive shield enclosing the male connection part and the female connection part, the first conductive shield being electrically connected to at least one of the male connection part and the female connection part, and an isolating part enclosing the first conductive shield.
H01R 13/53 - Bases or cases for heavy dutyBases or cases with means for preventing corona or arcing
G03F 7/00 - Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printed surfacesMaterials therefor, e.g. comprising photoresistsApparatus specially adapted therefor
H01R 43/26 - Apparatus or processes specially adapted for manufacturing, assembling, maintaining, or repairing of line connectors or current collectors or for joining electric conductors for engaging or disengaging the two parts of a coupling device
Systems and methods provide the ability to mitigate linear and/or offset coma present in an objective of a metrology tool. A method of reducing an effect of offset coma in a metrology apparatus includes rotating an objective lens element of the metrology apparatus until a best contrast for physically separated first and second portions of a metrology target is determined. A method of reducing an effect of linear coma in a metrology apparatus includes determining an amount of an axially symmetric coma aberration present in a lens system of the metrology device, and moving an optical element of the lens system in an axial z-direction to reduce the determined axially symmetric coma. A lens stop or other lens element may be moved in the z-direction to reduce coma. The two approaches may be combined.
G03F 7/00 - Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printed surfacesMaterials therefor, e.g. comprising photoresistsApparatus specially adapted therefor
G03F 9/00 - Registration or positioning of originals, masks, frames, photographic sheets or textured or patterned surfaces, e.g. automatically
99.
METHOD OF FORECASTIG A DRIFT IN A PARAMETER OF INTEREST IN A SEMICONDUCTOR MANAUFACTURING PROCESS
Described is a method for predicting future evolution of a parameter of interest of a manufacturing process for manufacturing integrated circuits, the method comprising: obtaining metrology data relating to the parameter of interest; forecasting a first statistical characteristic of future values of the parameter of interest by applying a first parameter model to the metrology data and subsequently obtaining residuals data of the first parameter model; forecasting a second statistical characteristic of future values of the parameter of interest by applying a second parameter model to the residuals data of the first parameter model; and predicting the future evolution of the parameter of interest of the manufacturing process based on comparison of at least one of the first statistical characteristic and the second statistical characteristic to at least one reference value.
G03F 7/00 - Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printed surfacesMaterials therefor, e.g. comprising photoresistsApparatus specially adapted therefor
G05B 13/04 - Adaptive control systems, i.e. systems automatically adjusting themselves to have a performance which is optimum according to some preassigned criterion electric involving the use of models or simulators
100.
METHOD FOR CONTROLLING A MANUFACTURING APPARATUS AND ASSOCIATED APPARATUSES
Disclosed is a method for determining a correction for control of at least one manufacturing apparatus used in a manufacturing process for providing structures to at least one region on a substrate, said region comprising at least a first sub-region and a second sub-region in a common layer. The method comprises obtaining process error data relating to said manufacturing process when forming said first sub-region on a substrate, determining a first on-product error from said process error data, said on-product error relating to an error in formation of said first sub-region; and determining, from said on-product error, a correction for said manufacturing process when forming said second sub-region on said substrate.
G03F 7/00 - Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printed surfacesMaterials therefor, e.g. comprising photoresistsApparatus specially adapted therefor
