Disclosed is a method for determining a focus parameter from a target on a substrate. The target comprises an isofocal first sub-target and a second non-isofocal sub-target. The method comprises obtaining a first measurement signal relating to measurement of the first sub-target, a second measurement signal relating to measurement of the second sub-target and at least one trained relationship and/or model which relates at least said second measurement signal to said focus parameter. A value for said focus parameter is determined from said first measurement signal, second measurement signal and said at least one trained relationship and/or model.
G03F 7/00 - Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printed surfacesMaterials therefor, e.g. comprising photoresistsApparatus specially adapted therefor
A method for determining a parameter of interest relating to at least one structure formed on a substrate in a manufacturing process. The method includes: obtaining layout data relating to a layout of a pattern to be applied to the at least one structure, the pattern including the at least one structure; and obtaining a trained model, having been trained on metrology data and the layout data to infer a value and/or probability metric relating to a parameter of interest from at least the layout data, the metrology data relating to a plurality of measurements of the parameter of interest at a respective plurality of measurement locations on the substrate. A value and/or probability metric is determined relating to the parameter of interest at one or more locations on the substrate different from the measurement locations from at least layout data using the trained model.
G03F 7/00 - Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printed surfacesMaterials therefor, e.g. comprising photoresistsApparatus specially adapted therefor
3.
APPARATUS AND METHOD FOR PROCESS-WINDOW CHARACTERIZATION
A process of characterizing a process window of a patterning process, the process including: obtaining a set of inspection locations for a pattern, the pattern defining features to be applied to a substrate with a patterning process, the set of inspection locations corresponding to a set of the features, the set of features being selected from among the features according to sensitivity of the respective features to variation in one or more process characteristics of the patterning process; patterning one or more substrates under varying process characteristics of the patterning process; and determining, for each of the variations in the process characteristics, whether at least some of the set of features yielded unacceptable patterned structures on the one or more substrates at corresponding inspection locations.
G03F 7/00 - Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printed surfacesMaterials therefor, e.g. comprising photoresistsApparatus specially adapted therefor
A height measurement sensor comprising projection and detection units. The projection unit comprises a radiation source and a projection grating comprising a projection grating spot having a plurality of grating lines, the projection grating arranged to receive radiation and output a radiation beam onto the surface to create a radiation spot. The detection unit comprises: a detection grating comprising a detection grating spot having a plurality of grating lines; a detector arranged to receive a reflected radiation beam comprising radiation from the radiation spot after passing through the detection grating spot; and a controller configured to (i) obtain a detector output signal comprising a plurality of periodic components; (ii) take a derivative of two points at different locations of the output signal, wherein the two points are separated by a period of the periodic components, and (iii) determine a focus plane of the sensor when the derivative changes sign.
Disclosed is a method of determining a value for a parameter of interest from a target on a substrate. The method comprises obtaining metrology data comprising single-wavelength parameter of interest values which were obtained using a respective different measurement wavelength; and determining said value for the parameter of interest from a stack sensitivity derived weighted combination of said single-wavelength parameter of interest values. Also disclosed is a method of selecting wavelengths for a measurement based on at least the derivative of the stack sensitivity with respect to wavelength.
G03F 7/00 - Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printed surfacesMaterials therefor, e.g. comprising photoresistsApparatus specially adapted therefor
G01B 11/27 - Measuring arrangements characterised by the use of optical techniques for measuring angles or tapersMeasuring arrangements characterised by the use of optical techniques for testing the alignment of axes for testing the alignment of axes
6.
FIELD OF VIEW SELECTION FOR METROLOGY ASSOCIATED WITH SEMICONDUCTOR MANUFACTURING
Selecting one or more lists of fields of view of a pattern layout for scanning electron microscope measurement and/or other inspection. A set of candidate fields of view is determined based on pattern groups of a pattern layout and a constraint on a characteristic of a given field of view. The characteristic of a given field of view includes a distance from the given field of view to another field of view and/or a size of the given field of view. The one or more lists are selected from the set of candidate fields of view according to prescribed criteria for combinations of fields of view included in the one or more lists. The prescribed criteria causes inclusion of an optimally diverse group of patterns in a predetermined number of lists of fields of view.
G03F 7/00 - Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printed surfacesMaterials therefor, e.g. comprising photoresistsApparatus specially adapted therefor
G01N 23/2251 - Investigating or analysing materials by the use of wave or particle radiation, e.g. X-rays or neutrons, not covered by groups , or by measuring secondary emission from the material using electron or ion microprobes using incident electron beams, e.g. scanning electron microscopy [SEM]
7.
DETERMINING A MEASUREMENT RECIPE IN A METROLOGY METHOD
A method for determining a measurement setting for measuring a parameter of interest from a target structure on a substrate. The method includes: obtaining first position difference data describing a difference between a position of a first representative target structure position and a position of one or more first features relating to product structure; obtaining optical metrology data relating to optical measurements of the target structure and further relating to a plurality of different measurement settings; and determining the measurement setting from the first position difference data and the optical metrology data such that a measured feature position value obtained from an optical measurement of the target structure using the determined measurement setting is better correlated to a position of the one or more first features.
G03F 7/00 - Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printed surfacesMaterials therefor, e.g. comprising photoresistsApparatus specially adapted therefor
G03F 9/00 - Registration or positioning of originals, masks, frames, photographic sheets or textured or patterned surfaces, e.g. automatically
8.
PELLICLES AND MEMBRANES FOR USE IN A LITHOGRAPHIC APPARATUS
Novel membranes for use in a lithographic apparatus are disclosed. A first membrane includes a core substrate and a metal silicate layer. The metal silicate layer is an outermost layer of the first membrane. A second membrane includes a core substrate and an yttrium silicate layer. The yttrium silicate layer may be an outermost layer of the membrane or, alternatively, the yttrium silicate layer may be disposed between the core substrate and a layer of yttrium or yttrium oxide. The first and second membranes may be provided within an EUV lithographic apparatus. For example, the membranes may form part of a pellicle. The pellicle may be suitable for use adjacent to a reticle within an EUV lithographic apparatus. The membranes may form part of a dynamic gas lock. The membranes may form part of a spectral filter.
G03F 7/00 - Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printed surfacesMaterials therefor, e.g. comprising photoresistsApparatus specially adapted therefor
G03F 1/64 - Pellicles or pellicle assemblies, e.g. having membrane on support framePreparation thereof characterised by the frames, e.g. structure or material thereof
A sample inspection tool is described. The inspection tool includes a light source configured to produce effective inspection radiation below 200 nm, a sample holder, an imaging sub-system containing sub-system components that delivers light along an optical path from the light source to a sample to be held by the sample holder, and a barrier positioned between the last sub-system component in the optical path and the sample to be held by the sample holder. The barrier permits the radiation to pass therethrough while inhibiting impurities from reaching the sample to be held by the sample holder. In another embodiment, a barrier is provided for use in an inspection tool.
A system includes an imaging system, a spatial filter, and a detector. The system is configured to receive a plurality of diffraction orders. The spatial filter is configured to block one or more undesired diffraction orders of the plurality of diffraction orders and to pass one or more desired diffraction orders of the plurality of diffraction orders. The spatial filter includes one or more obscurations having an angular dependent radius that varies azimuthally. The detector is configured to receive and measure an intensity of the one or more desired diffraction orders. The spatial filter is motorized.
G03F 7/00 - Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printed surfacesMaterials therefor, e.g. comprising photoresistsApparatus specially adapted therefor
There is provided a method for determining angular information of one or more structures comprising: illuminating a first surface portion of said one or more structures with an illumination beam and measuring radiation scattered therefrom to determine a first signal; determining a first asymmetry metric value describing degree of asymmetry of the first signal; and determining the angular information based on at least the first asymmetry metric value, wherein the illumination beam comprises a spot size smaller in at least one dimension of a smallest element of the first surface portion.
G03F 7/00 - Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printed surfacesMaterials therefor, e.g. comprising photoresistsApparatus specially adapted therefor
12.
SYSTEMS AND METHODS FOR MOTION CONTROL IN A SEMICONDUCTOR MANUFACTURING APPARATUS
A motion control system is described. The motion control system includes a releasable coupling coupled to a fine positioning stage and a coarse positioning stage. The releasable coupling is configured to mechanically couple the fine positioning stage to the coarse positioning stage during coarse positioning movements to transfer movement force from the coarse positioning stage to the fine positioning stage, and mechanically release the fine positioning stage from the coarse positioning stage during a processing operation such that the fine positioning stage is mechanically and dynamically decoupled from the coarse positioning stage. This release facilitates precision movements of the fine positioning stage. Mechanically coupling the fine positioning stage to the coarse positioning stage during coarse positioning movements facilitates reducing a required mass, volume, and/or energy consumption of fine positioning stage actuators, because these actuators need only control the relatively shorter stroke constant velocity movement of the fine positioning stage.
G03F 7/00 - Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printed surfacesMaterials therefor, e.g. comprising photoresistsApparatus specially adapted therefor
13.
CHARGED PARTICLE-OPTICAL DEVICE, CHARGED PARTICLE-OPTICAL APPARATUS AND METHOD FOR MANUFACTURING A CHARGED PARTICLE-OPTICAL DEVICE
A charged particle-optical device (41) for projecting one or more beams of charged particles towards a sample location, the device comprising: an assembly (70) comprising at least one charged particle-optical element (71) configured to operate on one or more beams of charged particles along one or more respective paths for the one or more beams towards a sample location; a frame (75) around the path and connected to the assembly; and a seal (60) around the path, secured between the frame and the assembly, and configured to seal between the frame and the assembly.
A method for characterizing stochastic effects in a patterning process comprising: selecting at least one pattern feature of a circuitry design layout, wherein the at least one pattern feature is identified as prone to stochastic error; generating a stochastic calibration layout comprising multiple instances of the at least one pattern feature; obtaining metrology data from a wafer that has been patterned with multiple instances of the at least one pattern feature, the wafer having been patterned by a patterning device generated from the stochastic calibration layout; and characterizing stochastic effects of a patterning process utilizing the patterning device on the at least one pattern feature based upon the metrology data from the multiple instances of the at least one pattern feature.
G03F 1/44 - Testing or measuring features, e.g. grid patterns, focus monitors, sawtooth scales or notched scales
G03F 7/00 - Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printed surfacesMaterials therefor, e.g. comprising photoresistsApparatus specially adapted therefor
15.
ELECTRONIC CIRCUIT, POSITIONING SYSTEM, SUBSTRATE HANDLING APPARATUS AND METHOD FOR BRAKING MOVEMENT OF A MOVABLE OBJECT
The invention provides an electronic circuit for powering a coil or coil set of an electromagnetic motor. The electronic circuit comprises a normal operating circuit to be used during a normal operating mode, a braking circuit to be used during an emergency mode, and a switch device for switching between the normal operating mode and the emergency mode. In the normal operating mode, the electronic circuit is configured to supply a power to the coil or coil set. In the emergency mode, the electronic circuit is configured to short circuit the coil or coil set across the braking circuit. The braking circuit is arranged to create a negative resistance or negative impedance to increase the braking force.
H02P 3/22 - Arrangements for stopping or slowing electric motors, generators, or dynamo-electric converters for stopping or slowing an individual dynamo-electric motor or dynamo-electric converter for stopping or slowing an AC motor by short-circuit or resistive braking
A lithographic apparatus is disclosed that includes a substrate table configured to support a substrate on a substrate supporting area and a heater and/or temperature sensor on a surface adjacent the substrate supporting area.
G03F 7/00 - Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printed surfacesMaterials therefor, e.g. comprising photoresistsApparatus specially adapted therefor
17.
ABERRATION IMPACT SYSTEMS, MODELS, AND MANUFACTURING PROCESSES
Scanner aberration impact modeling in a semiconductor manufacturing process, which may facilitate co-optimization of multiple scanners. Scanner aberration impact modeling may include executing a calibrated model and controlling a scanner based on output from the model. The model is configured to receive patterning system aberration data. The model is calibrated with patterning system aberration calibration data and corresponding patterning process impact calibration data. New patterning process impact data may be determined, based on the model, for the received patterning system aberration data. The model includes a hyperdimensional function configured to correlate the received patterning system aberration data with the new patterning process impact data. The hyperdimensional function is configured to correlate the received patterning system aberration data with the new patterning process impact data in an approximation form, in lieu of a full simulation, without involving calculation of an aerial image or a representation thereof.
G03F 7/00 - Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printed surfacesMaterials therefor, e.g. comprising photoresistsApparatus specially adapted therefor
18.
SUBSTRATE HOLDER FOR USE IN A LITHOGRAPHIC APPARATUS
A substrate holder for use in a lithographic apparatus and configured to support a substrate, the substrate holder having a main body having a main body surface, a plurality of main burls projecting from the main body surface, wherein each main burl has a distal end surface configured to support the substrate, a first seal member projecting from the main body surface and having an upper surface, the first seal member surrounding the plurality of main burls and configured to restrict the passage of liquid between the substrate and the main body surface radially inward past the first seal member, and a plurality of minor burls projecting from the upper surface of the first seal member, wherein each minor burl has a distal end surface configured to support the substrate.
H01L 21/687 - Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereofApparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches
G03F 7/00 - Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printed surfacesMaterials therefor, e.g. comprising photoresistsApparatus specially adapted therefor
19.
SYSTEMS AND METHODS FOR CLEANING A PORTION OF A LITHOGRAPHY APPARATUS
A system for cleaning contamination particles from a clamp of a lithography apparatus. The system includes a body configured to be inserted into the lithography apparatus, engaged by a tool handler of the lithography apparatus, and positioned by the tool handler for clamping by the clamp. Cleaning features are patterned on a clamp facing surface of the body. Locations and dimensions of the cleaning features on the clamp facing surface approximate locations and dimensions of the contamination particles on the clamp, such that relative movement between the cleaning features and the clamp cleans the contamination particles from the clamp. For example, the locations of the cleaning features on the clamp facing surface can correspond to object contact areas (e.g., burls) on the clamp where the contamination particles are located. The dimensions of the cleaning features comprise a specific pitch, a line width, and a thickness.
G03F 7/00 - Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printed surfacesMaterials therefor, e.g. comprising photoresistsApparatus specially adapted therefor
20.
MONITORING FADING EFFECT BASED ON COMPUTATIONAL LITHOGRAPHY SIMULATION
Described herein is a method and system for simulating fading effect in lithography. Patterns or cutlines are selected based on their fading sensitivity for monitoring fading effect. The fading sensitivity may be determined based on (a) a spatial derivative of a fading image, or (b) a second order derivative of an aerial image of the patterns. A fading source representing a scanning location dependent illumination pupil profile of a lithographic apparatus is obtained and a fading image is determined using the fading source. A derivative of a fading sensitivity indicator with respect to wafer stage modulation is determined based on a spatial derivative of the fading image. Patterns are represented using a feature vector of the derivates of the fading sensitivity indicator. The feature vectors are grouped, and a set of patterns are selected based on the grouping for monitoring the fading effect.
Disclosed is a metrology method for measuring a periodic structure on a substrate comprising: obtaining observation data relating to at least one observed spectrum, each said at least one observed spectrum being obtained from a measurement of the periodic structure; determining estimated target response spectral data from said observation data; simulating said measurement in terms of at least one parameter of interest and at least one measurement artifact parameter to obtain simulated target response spectral data; and fitting said simulated target response spectral data to said estimated target response spectral data by varying said at least one parameter of interest and at least one measurement artifact parameter describing an effect of one or more measurement artifacts, to determine said at least one parameter of interest.
G03F 7/00 - Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printed surfacesMaterials therefor, e.g. comprising photoresistsApparatus specially adapted therefor
22.
CHARGED PARTICLE-OPTICAL APPARATUS AND METHOD FOR DETECTING SIGNAL CHARGED PARTICLES
The present disclosure relates to a charged particle-optical apparatus configured to direct charged particles toward a sample, the charged particle-optical apparatus comprising: a charged particle-optical device configured to direct a plurality of beams of charged particles along respective beam paths toward a sample; a support configured to support the sample and configured to position the sample relative to the beam paths; a detector array of detector elements configured to detect signal charged particles emitted from respective areas of a surface of the sample so as to generate respective detection signals; and a cross talk remover configured to correct the detection signals for cross talk by operating on the detection signals independently of position of the sample relative to the beam paths.
Systems and methods for cooling in a charged particle system. Systems and methods may include a cooling platform mounted to a vacuum chamber, the cooling platform configured to hold and cool a plurality of modules; and a controller configured to monitor a temperature of the cooling platform; monitor a temperature of the vacuum chamber or a temperature of an ambient environment; and adjust the temperature of the cooling platform based on the temperature of the cooling platform, the temperature of the vacuum chamber, or the temperature of the ambient environment. Systems may include a heat transfer apparatus between a base plate of a wafer stage and an inner surface of a vacuum chamber, the heat transfer apparatus including deformation portions to be deformed by the base plate or the inner surface of the vacuum chamber; and a cooling platform outside of the vacuum chamber opposite to the base plate.
Disclosed is a metrology method and associated devices. The method comprises obtaining a first image, said first image being subject to one or more non-isoplanatic aberrations of an optical system used to capture said image; and non-iteratively correcting said first image for the effect of said one or more non-isoplanatic aberrations by performing one or both of: a field non-isoplanatic correction operation in field space for said first image, said field space corresponding to a field plane of the optical system; and a pupil non-isoplanatic correction operation in pupil space for said first image, said pupil space corresponding to a pupil plane of the optical system. Said one or more non-isoplanatic aberrations comprise a class of non-isoplanatic aberrations describable as a convolution combined with an object distortion and/or a pupil distortion.
G03F 7/00 - Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printed surfacesMaterials therefor, e.g. comprising photoresistsApparatus specially adapted therefor
G06T 5/10 - Image enhancement or restoration using non-spatial domain filtering
25.
SYSTEMS AND METHODS FOR PREDICTING CHARGING MODE AND OPTIMAL PARAMETERS FOR VOLTAGE CONTRAST
Systems and methods of predicting a charging mode of a charged particle system. Methods may include inputting a plurality of parameters into a model; generating, using the model, a plot for predicting the charging mode of the charged particle system; and predicting, based on the plot, the charging mode of the charged particle system.
H01J 37/02 - Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof Details
A system for controlling a temperature of a stage and reducing heat transfer from the stage to a sample is disclosed. The system may reduce a temperature difference between a first component of the stage and a second component of the stage to about 0.5 °C. A sample under inspection may not be exposed to significant changes in temperature and may not become contaminated via thermal-induced particle contamination.
The present disclosure relates to apparatus and methods for assessing samples using a plurality of charged particle beams. In one arrangement, at least a subset of a beam grid of a plurality of charged particle beams and respective target portions of a sample surface are scanned relative to each other to process the target portions. Signal charged particles from the sample are detected to generate detection signals. A sample surface topographical map is generated that represents a topography of the sample surface by analyzing the detection signals.
G01B 7/02 - Measuring arrangements characterised by the use of electric or magnetic techniques for measuring length, width, or thickness
H01J 37/20 - Means for supporting or positioning the object or the materialMeans for adjusting diaphragms or lenses associated with the support
28.
THERMAL CONDITIONING SYSTEM FOR USE IN AN EUV LITHOGRAPHIC APPARATUS AND METHOD OF THERMALLY CONDITIONING A PATTERNING DEVICE IN AN EUV LITHOGRAPHIC APPARATUS
The present disclosure relates to a thermal conditioning system for an EUV lithographic apparatus, the system comprising: a patterning device; a support structure configured to cool the patterning device; and one or more heaters configured to heat one or more portions of the patterning device whilst the patterning device is clamped to the support structure in position for exposure.
Disclosed is a method for determining a parameter of interest relating to at least one target on a substrate. The method comprises obtaining metrology data comprising at least one asymmetry signal, said at least one asymmetry signal comprising a difference or imbalance in a measurement parameter from the target; obtaining a trained model having been trained or configured to relate said at least one asymmetry signal to the parameter of interest, the trained model comprising at least one proxy for at least one nuisance component of the at least one asymmetry signal; and inferring said parameter of interest for said at least one target from said at least one asymmetry signal using the trained model.
G03F 7/00 - Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printed surfacesMaterials therefor, e.g. comprising photoresistsApparatus specially adapted therefor
30.
LITHOGRAPHIC APPARATUS, SUBSTRATE TABLE, AND MANUFACTURING METHOD
A method includes treating a burled surface of an object using radiation or heat and setting parameters of the radiation or heat to effectuate a predetermined surface strength, hardness, roughness, coefficient of friction, chemical resistance, wear resistance, and/or corrosion of the burled surface.
G03F 7/00 - Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printed surfacesMaterials therefor, e.g. comprising photoresistsApparatus specially adapted therefor
31.
INTENSITY MEASUREMENTS USING OFF-AXIS ILLUMINATION
Systems, apparatuses, and methods are provided for measuring intensity using off-axis illumination. An example method can include illuminating a region of a surface of a substrate with a first radiation beam at a first incident angle and, in response, measuring a first set of photons diffracted from the region. The example method can further include illuminating the region with a second radiation beam at a second incident angle and, in response, measuring a second set of photons diffracted from the region. The example method can further include generating measurement data for the region based on the measured first set of photons and the measured second set of photons.
G03F 9/00 - Registration or positioning of originals, masks, frames, photographic sheets or textured or patterned surfaces, e.g. automatically
G03F 7/00 - Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printed surfacesMaterials therefor, e.g. comprising photoresistsApparatus specially adapted therefor
Disclosed herein is a surface member for removable application to cover at least a part of a surface of an immersion lithographic apparatus. The surface member has two major orthogonal dimensions. The surface member comprises: a first layer comprising a contact surface configured to contact the surface of the immersion lithographic apparatus, the first layer comprising an adhesive configured to adhere the surface member to the surface of the immersion lithographic apparatus via the contact surface; a second layer on top of the first layer, the second layer comprising a first free edge and a second free edge. The surface member is configured such that, in use, the first free edge and the second free edge of the second layer and the contact surface of the first layer form a substantially flat surface so as to cover the at least a part of a surface of an immersion lithographic apparatus.
G03F 7/00 - Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printed surfacesMaterials therefor, e.g. comprising photoresistsApparatus specially adapted therefor
B32B 33/00 - Layered products characterised by particular properties or particular surface features, e.g. particular surface coatingsLayered products designed for particular purposes not covered by another single class
33.
VIRTUAL METROLOGY SYSTEM COMPONENTS AND ASSOCIATED METHODS
A specialized machine learning model is configured to minimize and/or eliminate the need for motorized hardware used to block higher order diffracted radiation from corrupting alignment measurements in a semiconductor manufacturing metrology process. For example, a radiation source irradiates a metrology target in a layer of a patterned substrate with radiation, which diffracts the radiation. A radiation sensor outputs phase data and intensity data for the diffracted radiation. The phase data comprises different energies associated with different diffraction orders of the diffracted radiation. The model is configured to determine a subset of intensity data associated with positive and negative first order diffracted radiation incident on a radiation sensor based on phase data, and determine an intensity difference or intensity imbalance between the positive and negative first order diffracted radiation based on the subset of the intensity data. Alignment is determined based on the intensity imbalance.
G03F 7/00 - Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printed surfacesMaterials therefor, e.g. comprising photoresistsApparatus specially adapted therefor
34.
LASER DIFFRACTION OPTICAL MICROSCOPY FOR ULTRA-THIN PATTERN WAFER
An optical microscope is provided for inspecting patterns or performing wafer alignment in e-beam inspection systems in ultra-thin photoresist layers on a semiconductor substrate. The optical microscope may comprise a laser configured to produce a diffraction light in the microscope objective. The optical microscope may be capable of generating an optical image of a latent pattern in the ultra-thin photoresist.
G03F 7/00 - Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printed surfacesMaterials therefor, e.g. comprising photoresistsApparatus specially adapted therefor
G01N 21/956 - Inspecting patterns on the surface of objects
An apparatus comprises a carrier to position an object and a frame to support the carrier. A first actuator applies a first force between the carrier and the frame and a second actuator applies a second force to the frame. A controller controls the first actuator and the second actuator in a feedforward manner, to, when the carrier applies a reaction force to the frame: control the first actuator to apply a first force and control the second actuator to apply a second force, wherein the first force and the second force are substantially opposite in magnitude and direction. The controller may control the first actuator to apply the first force to at least partly compensate the reaction force.
An apparatus, a system, and a method for transferring heat from a component in a vacuum are disclosed. In some embodiments, a heat pipe is used to transfer heat from a heat collecting component to a heat exchanger positioned outside of the vacuum chamber. Embodiments of the present disclose provide an apparatus or system that may be easier to maintain and reduce the risk of damaging electronics or vacuum within a charged particle beam apparatus. In some embodiments, heat transfer or cooling efficiency may be improved.
F28D 15/02 - Heat-exchange apparatus with the intermediate heat-transfer medium in closed tubes passing into or through the conduit walls in which the medium condenses and evaporates, e.g. heat-pipes
Disclosed herein is an multi-array lens configured in use to focus a plurality of beamlets of charged particles along a multi-beam path, wherein each lens in the array comprises: an entrance electrode; a focussing electrode and a support. The focusing electrode is down beam of the entrance electrode along a beamlet path and is configured to be at a potential different from the entrance electrode. The support is configured to support the focusing electrode relative to the entrance electrode. The focusing electrode and support are configured so that in operation the lens generates a rotationally symmetrical field around the beamlet path.
H01J 37/317 - Electron-beam or ion-beam tubes for localised treatment of objects for changing properties of the objects or for applying thin layers thereon, e.g. ion implantation
H01J 37/09 - DiaphragmsShields associated with electron- or ion-optical arrangementsCompensation of disturbing fields
STICHTING NEDERLANDSE WETENSCHAPPELIJK ONDERZOEK INSTITUTEN (Netherlands)
STICHTING VU (Netherlands)
UNIVERSITEIT VAN AMSTERDAM (Netherlands)
ASML NETHERLANDS B.V. (Netherlands)
Inventor
Goorden, Sebastianus, Adrianus
Sokolov, Sergei
Heinisch, Jan-Brian, Mi-Yu
Huisman, Simon, Reinald
Abrashitova, Ksenia
Amitonova, Liubov, Vladimirovna
Abstract
Multi core waveguides such as fibers for semiconductor metrology systems and methods are described. The multi core waveguides are configured to conduct the radiation from a radiation source to a structure such as a metrology target in one or more layers of a patterned substrate, and the diffracted and/or reflected radiation from the metrology target to a radiation sensor. The multi core waveguides have a length configured to facilitate placement of the radiation source and/or the radiation sensor in a spaced location relative to the patterned substrate. The length of the multi core waveguides is configured to provide increased functional space for other components of a metrology system located proximate to the patterned substrate (e.g., various lenses and/or other optical components).
G03F 7/00 - Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printed surfacesMaterials therefor, e.g. comprising photoresistsApparatus specially adapted therefor
G01N 21/956 - Inspecting patterns on the surface of objects
39.
METHOD OF DETERMINING A SAMPLING SCHEME AND ASSOCIATED METROLOGY METHOD
Disclosed is a method of determining a sampling scheme for measuring at least one substrate or a portion thereof, the substrate being subject to a lithographic process to expose structures thereon using a lithographic apparatus comprising a measurement station for measuring the substrate and an exposure station for performing exposures on the substrate. The method comprises determining a correlation between measurement actions on said measurement station and exposed portions of said at least one substrate; determining an expected variability of a parameter of interest related to the lithographic process from said correlation; and determining the sampling scheme from said expected variability.
Disclosed herein is a surface member for removable application to cover at least a part of a surface of an immersion lithographic apparatus. The surface member has two major orthogonal dimensions and comprises: a first layer comprising an adhesive configured to adhere the surface member to the surface of the immersion lithographic apparatus; a second layer disposed on the first layer; a third layer disposed on the second layer; a fourth layer disposed on the third layer; and a fifth layer disposed on the fourth layer. The third layer comprises an adhesive configured to adhere the second layer to the fourth layer. At least the second layer is patterned so as to tune stiffness of the surface member in at least one of magnitude and directionality.
G03F 7/00 - Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printed surfacesMaterials therefor, e.g. comprising photoresistsApparatus specially adapted therefor
A method of monitoring the performance of an immersion lithographic apparatus, the method comprising: moving a test substrate relative to a liquid confinement structure through a series of test route portions whilst projecting exposure radiation through an immersion liquid onto a photosensitive layer on the test substrate such that the photosensitive layer is exposed; wherein the series of test route portions include a first test route portion and a second test route portion; and the second test route portion is symmetric to the first test route portion.
G03F 7/00 - Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printed surfacesMaterials therefor, e.g. comprising photoresistsApparatus specially adapted therefor
Metrology systems and methods are described. In these systems and methods, one or more metasurfaces are used to correct aberrations caused by optical element(s) (e.g., lenses, beam splitters, mirrors, refractive or diffractive optical components, etc.). A metasurface (also known as a metalens) is a relatively thin 2D planar surface array of structures configured to modify the trajectory, amplitude, phase, polarization, and/or other characteristics of an incident beam. The one or more metasurfaces are configured to replace one or more refractive elements, diffractive elements, and/or a moving stage, for example, previously used for aberration correction in prior metrology systems. This makes the present metrology systems more compact, lighter, and cheaper than prior systems, among other advantages.
G03F 7/00 - Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printed surfacesMaterials therefor, e.g. comprising photoresistsApparatus specially adapted therefor
Disclosed is a method of identifying a source of a reconstruction error relating to reconstruction of a plurality of model parameters describing a structure on a substrate formed in a lithographic process. The method comprises: obtaining model parameters describing a nominal profile for describing said structure; obtaining metrology data relating to a measurement of said structure; determining simulated data, from a simulation of the measurement of said structure described in accordance with said model parameters; determining a spatially resolved sensitivity metric describing a sensitivity of a cost function to at least one property and/or function of said structure, said cost function comparing the metrology data and simulated data; and identifying a source of a reconstruction error from said spatially resolved sensitivity metric.
G03F 7/00 - Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printed surfacesMaterials therefor, e.g. comprising photoresistsApparatus specially adapted therefor
H01L 21/66 - Testing or measuring during manufacture or treatment
44.
ACTUATOR ASSEMBLIES COMPRISING PIEZO ACTUATORS OR ELECTROSTRICTIVE ACTUATORS
An actuator assembly including a first piezo actuator and a second piezo actuator. The piezo actuator has a correction unit configured to determine an output voltage difference representing a difference between a voltage at the output terminal of the first piezo actuator and a voltage at the output terminal of the second piezo actuator, and a first power correction for correcting the first power signal and/or a second power correction for correcting the second power signal, based on the output voltage difference.
G03F 7/00 - Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printed surfacesMaterials therefor, e.g. comprising photoresistsApparatus specially adapted therefor
H02N 2/02 - Electric machines in general using piezoelectric effect, electrostriction or magnetostriction producing linear motion, e.g. actuatorsLinear positioners
MAGNETIC LEVITATION POSITIONER ASSEMBLY FOR USE IN A LITHOGRAPHIC APPARATUS, LITHOGRAPHIC APPARATUS THEREWITH, METHOD OF OPERATING THE ASSEMBLY AND METHOD OF MANUFACTURING DEVICES COMPRISING THE METHOD OF OPERATING OR USING THE APPARATUS
An assembly for use in a lithographic apparatus, the assembly comprising: a thermal conditioning plate; a plurality of superconducting coils for magnetically levitating and linearly displacing a stage thereon, wherein the plurality of superconducting coils is in thermal contact with the thermal conditioning plate; wherein: the thermal conditioning plate comprises a first internal passage for containing a first cryogen, and a second internal passage for containing a second cryogen; and the first and second internal passages are thermally coupled to each other and are fluidly isolated from each other, so as to enable heat transfer between the first and second cryogens while fluidly isolating the first and second cryogens from each other.
Wavefront measurement for multi core optical fibers is described. A multi core optical fiber is configured to conduct radiation from a radiation source to a structure such as a metrology target in one or more layers of a patterned substrate, and diffracted and/or reflected radiation from the metrology target to a radiation sensor. The multi core optical fiber has a length configured to facilitate placement of the radiation source and/or the radiation sensor in a spaced location relative to the patterned substrate. Optical path length differences between a subset of cores in the multi core optical fiber with reflectors are determined for different wavelengths of radiation from the radiation source. The optical path length differences are determined based on path lengths of reflected radiation that impinges on the radiation sensor after passing back through the subset of cores. The optical path length differences indicate wavefront distortion.
47.
SYSTEMS AND METHODS FOR DISTORTION CORRECTION IN CHARGED-PARTICLE BEAM IMAGING
Systems and methods of reducing SEM image distortion using feed-forward control for thermal drift correction are disclosed. The system may include a charged-particle beam apparatus comprising a charged-particle source configured to emit charged particles, a plurality of charged-particle beam deflectors configured to influence a path of a primary charged-particle beam formed from the emitted charged particles, and one or more processors configured to execute a set of instructions to cause the charged-particle beam apparatus to perform operations comprising: obtaining information associated with thermal drift of a sample stage, determining a thermal drift of the sample stage at an image acquisition location of the sample based on the obtained information, and applying a control signal to at least one of the plurality of charged-particle beam deflectors to compensate the determined thermal drift of the sample stage.
A cooling system for a linear actuator is described. The cooling system includes an iron core having multiple slots, wound electrical coils of a particular design shape, and cooling plates. Each electrical coil is shaped the same and in a ring configuration that has two opposite sides of the ring configured to fit into two different slots of the iron core. Each cooling plate may be shaped to mirror at least part of the contour of a coil to fit into at least one slot of the iron core. The particular design of the coils and cooling plates allows them to be stacked into multiple slots of the iron core such that there are no volume conflicts with each other.
H02K 3/12 - Windings characterised by the conductor shape, form or construction, e.g. with bar conductors arranged in slots
H02K 3/24 - Windings characterised by the conductor shape, form or construction, e.g. with bar conductors with channels or ducts for cooling medium between the conductors
Reticle stage short-stroke devices can be made of a cordierite body. The cordierite body is polished and then a silicon dioxide coating or a ultra-low expansion (ULE) glass layer is deposited. After thinning and polishing the deposited layer, an optic is positioned on the layer. The optic can be made out of Zerodur® and forms an optical contact with the silicon dioxide or ULE glass layer. The optic then holds the reticle clamp as well as encoder scales and fiducials.
G03F 7/00 - Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printed surfacesMaterials therefor, e.g. comprising photoresistsApparatus specially adapted therefor
Described herein are systems and methods for providing output radiation, the systems and methods comprising broadening and/or temporally shortening radiation to produce the output radiation. The systems and methods may comprise broadening and/or temporally shortening two radiation beams having different wavelengths, for example a pump radiation beam and a converted (e.g. second harmonic) radiation beam.
The present invention provides an electron-beam imaging system comprising an electron-beam source for generating a primary beam, an optical system for directing and focusing the primary beam onto a sample, and a charge detector for collecting interaction products. The charge detector comprises: a current detection electrode configured to connect to current measurement circuitry, a low atomic mass region comprising a low atomic mass material, and a high atomic mass region comprising a high atomic mass material. The high atomic mass material has a higher atomic mass than the low atomic mass material. The electron-beam imaging system is configured such that during use the low atomic mass region is closer to the sample compared to the high atomic mass region for reducing a second- generation interaction products yield at the charge detector.
An assessment method comprising: using an assessment apparatus to generate assessment signals representing a property of a surface of a sample; processing the assessment signals to identify candidate defects and outputting a candidate defect signal; monitoring the status of the assessment apparatus for error conditions and generating a status signal indicating any error conditions during functioning of the assessment apparatus; and analysing the candidate defect signal to determine if the candidate defects are real defects; wherein analysis of a candidate defect is not completed if the status signal indicates that the assessment signal(s) and/or the candidate defect signal corresponding to the candidate defect would have been affected by an error condition.
Systems and methods for training a machine learning model to classify defects with utility-function-based active learning are described. In one embodiment, one or more non-transitory, machine-readable mediums are configured to cause a processor to at least determine a utility function value for unclassified measurement images, based on a machine learning model, wherein the machine learning model is trained using a pool of labeled measurement images. Based on a determination that the utility function value for a given unclassified measurement image is less than a threshold value, the unclassified measurement image is output for classification without the use of the machine learning model. The unclassified measurement images classified via the classification without the use of the machine learning model are added to the pool of labeled measurement images. The machine learning model is trained based on the measurement images classified via the classification without the use of the machine learning model.
G06V 10/764 - Arrangements for image or video recognition or understanding using pattern recognition or machine learning using classification, e.g. of video objects
A controller system is configured to control a plant and comprising a feedforward controller to provide, based on a reference state signal, a feedforward signal to the plant, and a feedback controller system to provide a feedback signal to the plant, based on a difference between the reference state signal and a plant state signal representing an actual state of the plant. The feedback controller system comprises an integrator, a trajectory generator, and a selector. The feedback controller system is configured to operate as a function of the reference state in a first control mode or a second control mode, wherein the feedback controller system, in the first control mode, operates the selector to select the trajectory generator output signal generated by the trajectory generator, and wherein the feedback controller system, in the second control mode, operates the selector to select the integrator output signal generated by the integrator.
G03F 7/00 - Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printed surfacesMaterials therefor, e.g. comprising photoresistsApparatus specially adapted therefor
G05B 11/42 - Automatic controllers electric with provision for obtaining particular characteristics, e.g. proportional, integral, differential for obtaining a characteristic which is both proportional and time-dependent, e.g. P. I., P. I. D.
A broadband light source assembly, a metrology apparatus and a method of generating broadband radiation have been disclosed. The broad light source comprises a femtosecond pump laser arranged to emit pulses of radiation, wherein the pulses of radiation have an energy per pump pulse of greater than 50 nJ; and comprises an all-normal dispersion optical fiber arranged to receive the pulses of radiation.
A charged particle-optical device configured to assess a sample, the charged particle-optical device comprising: an emitter configured to emit a beam of charged particles along a beam path; a chopper configured to chop the beam into pulses; a compressor configured to compress the pulses into compressed pulses, wherein the charged particle-optical device is configured to direct the compressed pulses along the beam path onto a sample location; and a detector configured to detect signal charged particles from the sample location so as to assess a sample located at the sample location.
H01J 37/04 - Arrangements of electrodes and associated parts for generating or controlling the discharge, e.g. electron-optical arrangement, ion-optical arrangement
H01J 37/28 - Electron or ion microscopesElectron- or ion-diffraction tubes with scanning beams
57.
METHOD OF ASSESSING A SAMPLE, APPARATUS FOR ASSESSING A SAMPLE
The present disclosure relates to apparatus and methods for assessing samples using charged particles. In one arrangement, a degassing action is performed by exposing a target area of a sample with charged particles to stimulate degassing. A rate of degassing from the target area is measured during the degassing action. Initiation of an assessing of the sample is controlled based on a characteristic of the measured rate of degassing. The assessing of the sample comprising exposing the target area with charged particles and detecting signal charged particles from the target area.
G01N 7/16 - Analysing materials by measuring the pressure or volume of a gas or vapour by allowing the material to emit a gas or vapour, e.g. water vapour, and measuring a pressure or volume difference by heating the material
H01J 37/20 - Means for supporting or positioning the object or the materialMeans for adjusting diaphragms or lenses associated with the support
H01J 37/244 - DetectorsAssociated components or circuits therefor
H01J 37/28 - Electron or ion microscopesElectron- or ion-diffraction tubes with scanning beams
An optical apparatus for a reticle stage of a lithographic apparatus is disclosed. The optical apparatus comprises: a reflective optical element comprising a surface for exposure to radiation; at least two electrodes located at the surface; and a measurement system configured to measure one or more electrical characteristics of the reflective optical element between the at least two electrodes. Also disclosed is a method of measuring a degradation of a reflective optical element having a surface for exposure to radiation in a lithographic apparatus, the method comprising: providing at least two electrodes at the surface of the reflective optical element; and measuring one or more electrical characteristics of the reflective optical element between the at least two electrodes.
G03F 7/00 - Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printed surfacesMaterials therefor, e.g. comprising photoresistsApparatus specially adapted therefor
A radiation source, a metrology tool, a lithographic apparatus and a method of generating an acoustic mode in a gas medium are provided. The radiation spectrum configuration system comprising a hollow optical waveguide and one or more transducers. The hollow optical waveguide contains a gas medium. The one or more transducers are configured to generate an acoustic mode in the gas medium.
G02F 1/125 - Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulatingNon-linear optics for the control of the intensity, phase, polarisation or colour based on acousto-optical elements, e.g. using variable diffraction by sound or like mechanical waves in an optical waveguide structure
A method of refurbishing a substrate support, the substrate support comprising: a first surface, configured to support a substrate; and a second surface, opposite to the first surface. The method comprises: depositing a material on the second surface to form a coating layer which increases a thickness of the substrate support; and removing material from the first surface.
H01L 21/687 - Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereofApparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches
G03F 7/00 - Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printed surfacesMaterials therefor, e.g. comprising photoresistsApparatus specially adapted therefor
Assemblies and methods for wavelength calibration of radiation. The assembly comprises one or more spectrometers configured to measure a first radiation spectrum of the radiation. The assembly then measures a second radiation spectrum while a gas is present in a propagation path of the radiation. The gas has an absorption line that overlaps with at least one wavelength of the radiation. The assembly optionally further comprises a processor configured to determine a wavelength calibration of the one or more spectrometers based on a difference between the second radiation spectrum and the first radiation spectrum.
Described herein are machine learning based system, method, and non-transitory computer readable medium for determining three-dimensional (3D) information of a structure of a patterned substrate. The 3D information can be determined using a neural network to convert a two-dimensional image to a 3D image. In a method, the neural network is trained by supplying simulated images of a sample with varied parameters to model a real fabricated IC structure. The trained network generates a depth map from newly supplied images of a sample to predict defect location The depth map may be converted to a binary map to predict defect dimension and location that may be used to guide inspection of a sample using an inspection tool.
A supercontinuum radiation source including a pump laser arrangement for generating pump radiation and including a plurality of pump laser heads; a radiation combiner for combining the respective pump radiation from each pump laser head, and a non-linear fiber for receiving the pump radiation so as to excite a working medium within the non-linear fiber to generate supercontinuum radiation. Each pump laser head has dimensions no greater than 5 cm in any direction. Alternatively, or in addition the supercontinuum radiation source further includes a control arrangement for controlling the pump laser arrangement, the control arrangement configured for non-simultaneous emission of pulses from each pump laser head.
G03F 7/00 - Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printed surfacesMaterials therefor, e.g. comprising photoresistsApparatus specially adapted therefor
H01S 3/00 - Lasers, i.e. devices using stimulated emission of electromagnetic radiation in the infrared, visible or ultraviolet wave range
H01S 3/094 - Processes or apparatus for excitation, e.g. pumping using optical pumping by coherent light
H01S 3/0941 - Processes or apparatus for excitation, e.g. pumping using optical pumping by coherent light of a semiconductor laser, e.g. of a laser diode
A multi-beam apparatus for observing a sample with high resolution and high throughput is proposed. In the apparatus, a source-conversion unit changes a single electron source into a virtual multi-source array, a primary projection imaging system projects the array to form plural probe spots on the sample, and a condenser lens adjusts the currents of the plural probe spots. In the source-conversion unit, the image-forming means is on the upstream of the beamlet-limit means, and thereby generating less scattered electrons. The image-forming means not only forms the virtual multi-source array, but also compensates the off-axis aberrations of the plurality of probe spots.
A measurement system (shearing interferometer) is for determining an aberration map for a projection system (for example within a lithographic apparatus). The measurement system comprises: a first patterning device positionable in an object plane of the projection system; a second patterning device positionable in an image plane of the projection system; and a radiation detector arranged to receive radiation from the second patterning device. The second patterning device has a variable pitch such that an angular separation between adjacent pairs of diffraction beams formed by the second patterning device is non-uniform. The pitch of the second patterning device may have an extremum value at a first position on the second patterning device and the pitch of the second patterning device may either increases or decreases as a function of distance from the first position.
G03F 7/00 - Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printed surfacesMaterials therefor, e.g. comprising photoresistsApparatus specially adapted therefor
Systems and methods for measuring an energy barrier of a transistor during fabrication of the transistor, including determining a photocurrent of a transistor for each of a plurality of photon energies; determining energy barriers based on photocurrents for each of a plurality of landing energies of the charged particle beam; and determining an energy barrier of the transistor based, wherein the energy barrier is a zero-voltage energy barrier or a substantially near zero-voltage energy barrier. Methods include irradiating a gate with a charged particle beam; irradiating underneath the gate with a photon beam; determining a secondary electron (SE) yield at each of a plurality of photon energies; and determining an energy barrier of the transistor.
H01L 21/66 - Testing or measuring during manufacture or treatment
G01N 23/00 - Investigating or analysing materials by the use of wave or particle radiation, e.g. X-rays or neutrons, not covered by groups , or
H01J 37/00 - Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
68.
METHODOLOGY TO PREDICT A PART PER TRILLION FAILURE RATE
A method of predicting a part per trillion failure rate, and more particularly, a method of improving failure rate prediction by grouping features on a sample to drastically increase a number of features on a device or sample available for metrology and inspection is disclosed. A single-beam tool and a multi-beam tool may be used simultaneously to calibrate a computational model and leverage accurate part per trillion failure rate prediction for a sample.
A system includes an illumination system, an optical system, a detector system, and a processor. The illumination system directs a first illumination beam and a second illumination beam towards a target structure and a first reference beam towards the detector system. The optical system directs a first scattered beam and a second scattered beam from the target structure to a detector system. The detector system captures an interference pattern and outputs a measurement signal. The first scattered beam, the second scattered beam, and the first reference beam generate the interference pattern. The processor analyzes the measurement signal to determine a characteristic of the target structure.
A computer-implemented method is proposed for generating a spectral model representation of an electromagnetic element for use in determining an electromagnetic response to electromagnetic radiation interacting with the electromagnetic element. The spectral representation contains a two-dimensional array of elements corresponding to respective wave vectors, each of the wave vectors being defined by a (different) corresponding pair of wave numbers in two mutually transverse directions. The electromagnetic element is described geometrically as a plurality of slices stacked transverse to these directions, and each containing one or more polygons. The method comprises determining points along each of the polygon edges, a computes coefficient is computed based on an extent of the corresponding polygon edge in the transverse directions. Fourier components are generated in each of the transverse directions, for each of the wave vectors, by performing a Fast Fourier Transform, FFT, algorithm using the coefficients.
G03F 7/00 - Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printed surfacesMaterials therefor, e.g. comprising photoresistsApparatus specially adapted therefor
71.
METHOD FOR DESIGNING A FOCUS TARGET FOR FOCUS METROLOGY
Disclosed is a method for designing a focus target for determining a focus setting of a lithographic apparatus used to form said target. The method comprises determining an initial target design, the initial target design being configure to enhance a mask 3D effect, resultant from the effect of three dimensional reticle features and an off-axis beam incidence on a reticle comprising target features arranged in accordance to said target design; modeling an exposure a target according to said initial target design and measurement of said target for at least a plurality of different focus settings; varying the target design based on said modeling so as to improve said target design in terms of at least one performance indicator; and determining a final target design based on said at least one performance indicator.
Methods and apparatus for assessing a charged particle beam are disclosed. In one arrangement, a plurality of images of a reference pattern on a sample is generated by scanning a charged particle beam over the reference pattern at each of a corresponding plurality of focus conditions and detecting signal charged particles emitted from the sample. At least an astigmatism characteristic of the beam is determined by analyzing the images.
A masking module for use in a lithographic apparatus, comprising a moveable masking blade configured to prevent part of a patterning device from being illuminated during operation of the lithographic apparatus. The masking module is configured to rotate the moveable masking blade about an axis substantially parallel to a plane in which the patterning device is held in the lithographic apparatus. The masking module may further comprise a support and a masking assembly, rotatable relative to the support. The masking assembly may comprise a moveable masking blade and an arm, extending from the moveable masking blade. The arm extends from the moveable masking blade in a first direction, and the masking assembly is rotatable relative to the support such that the moveable masking blade has at least a component of motion in a second direction, generally perpendicular to the first direction.
G03F 7/00 - Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printed surfacesMaterials therefor, e.g. comprising photoresistsApparatus specially adapted therefor
74.
A METHOD OF SPECTRALLY CONFIGURING MEASUREMENT ILLUMINATION OF A METROLOGY TOOL AND ASSOCIATED APPARATUSES
Disclosed is a method of spectrally configuring measurement illumination of a metrology tool, the method comprising: projecting measurement radiation using said projection optical system to obtain projected measurement radiation; measuring a signal amplitude metric of said projected measurement radiation at a detector; determining a spectral shape of the projected measurement radiation from the signal amplitude metric; and spectrally configuring the measurement illumination before the projection optical system to adjust said spectral shape to match a desired spectral shape.
G03F 7/00 - Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printed surfacesMaterials therefor, e.g. comprising photoresistsApparatus specially adapted therefor
G03F 9/00 - Registration or positioning of originals, masks, frames, photographic sheets or textured or patterned surfaces, e.g. automatically
G02B 26/08 - Optical devices or arrangements for the control of light using movable or deformable optical elements for controlling the direction of light
A system for measuring the height of a resist-covered surface of a substrate, the system comprising a projection unit comprising at least one radiation source configured to emit radiation having a first wavelength and radiation having a second wavelength, the projection unit being configured to direct the radiation having the first and second wavelengths onto the resist covered surface of the substrate, the first wavelength being absorbed more by the resist than the second wavelength, a detection system configured to measure the radiation reflected from the substrate and resist in the first and second wavelengths, and a processor configured to process the measured first and second wavelength radiation to obtain a height map for the substrate, wherein the height map substantially compensates for thickness variation of the resist on the substrate.
A method for processing images for metrology using a charged particle beam tool may include obtaining, from the charged particle beam tool, an image of a portion of a sample. The method may further include processing the image using a first image processing module to generate a processed image. The method may further include determining image quality characteristics of the processed image and determining whether the image quality characteristics of the processed image satisfy predetermined imaging criteria. The method may further include in response to the image quality characteristics of the processed image not satisfying the imaging criteria, updating a tuning condition of the charged-particle beam tool, acquiring an image of the portion of the sample using the charged-particle beam tool that has the updated tuning condition, and processing the acquired image using the first image processing module to enable the processed acquired image to satisfy the predetermined imaging criteria.
G03F 7/00 - Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printed surfacesMaterials therefor, e.g. comprising photoresistsApparatus specially adapted therefor
77.
METHOD AND SYSTEM OF DEFECT DETECTION FOR INSPECTION SAMPLE BASED ON MACHINE LEARNING MODEL
Systems and methods for training a machine learning model for defect detection include obtaining training data including an inspection image of a fabricated integrated circuit (IC) and design layout data of the IC, and training a machine learning model using the training data. The machine learning model includes a first autoencoder and a second autoencoder. The first autoencoder includes a first encoder and a first decoder. The second autoencoder includes a second encoder and a second decoder. The second decoder is configured to obtain a first code outputted by the first encoder. The first decoder is configured to obtain a second code outputted by the second encoder.
A method of training a generator model comprising: using the generator model to generate the predictive data based on the first measured data, wherein the first measured data and the predictive data can be used to form images of the sample; pairing subsets of the first measured data with subsets of the predictive data, the subsets corresponding to locations within the images of the sample that can be formed from the first measured data and the predictive data; using a discriminator to evaluate a likelihood that the predictive data comes from a same data distribution as second measured data measured from a sample after an etching process; and training the generator model based on: correlation for the pairs corresponding to a same location relative to correlation for pairs corresponding to different locations, the correlation being the correlation between the paired subsets of data, and the likelihood evaluated by the discriminator.
Current substrate (e.g., semiconductor wafer) coupling (e.g., bonding) process control methodology uses measured substrate flatness and shape to control the coupling process. Current equipment configurations and coupling processes introduce high substrate (e.g., semiconductor wafer edge) distortion that causes pronounced non-correctable (e.g., overlay and/or other) errors, and significant substrate-to-substrate distortion variation because the current coupling processes are highly substrate material property dependent. The measured flatness and shape do not provide sufficient indications of these substrate material properties. Advantageously, in the described systems and methods, key substrate material properties, such as elastic modulus (E), geometrical properties (I), and deformation moments (M), are determined for a specific substrate just prior to coupling based on directly measured substrate deformation, then provided as feedback for real-time adjustments to the coupling process for that substrate.
H01L 21/67 - Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereofApparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components
H01L 21/68 - Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereofApparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components for positioning, orientation or alignment
80.
OPTICAL VORTEX BASED METROLOGY SYSTEMS AND METHODS
Optical vortex based metrology systems and methods are described. A radiation source is configured to irradiate a metrology target in one or more layers of a patterned substrate with radiation. The metrology target is configured to diffract and impart orbital angular momentum to the radiation from the radiation source. A radiation sensor is configured to generate a metrology signal based on the orbital angular momentum of the diffracted radiation received from the metrology target. The metrology signal comprises alignment position information and/or overlay information for the one or more layers. Advantageously, orbital angular of momentum of diffracted radiation can carry additional information useful to generate more accurate measurement compared to existing metrology systems, where only phase or intensity information is used.
G03F 7/00 - Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printed surfacesMaterials therefor, e.g. comprising photoresistsApparatus specially adapted therefor
G03F 9/00 - Registration or positioning of originals, masks, frames, photographic sheets or textured or patterned surfaces, e.g. automatically
81.
PROJECTION SYSTEM CHARACTERISATION SYSTEM AND METHOD
Disclosed herein is a computing system configured to perform a method for determining aberrations of an optical system in response to patterned light, the method comprising: determining a combination of test features that substantially corresponds to an arrangement of product features on a patterning device arranged to pattern light before the light passes through the optical system; and determining aberrations caused by the response of the optical system to the patterned light in dependence on the known response of each test feature in the determined combination.
Cloin, Christian, Gerardus, Norbertus, Hendricus, Marie
Van Mil, Joost, Johannes, Lambertus
Van Kampen, Maarten
Cats, Selwyn, Yannick, Frithjof
Abstract
An optical element for an EUV lithographic apparatus, the optical element comprising: an optical surface (151) configured to receive radiation; a support member (152) that is electrically conductive; and a spacer (155) that is electrically insulating and configured to electrically isolate the optical surface, wherein a capacitance between surfaces separated by the spacer is less than 1 pF.
G03F 7/00 - Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printed surfacesMaterials therefor, e.g. comprising photoresistsApparatus specially adapted therefor
G02B 7/18 - Mountings, adjusting means, or light-tight connections, for optical elements for prismsMountings, adjusting means, or light-tight connections, for optical elements for mirrors
A radiation system comprising a deformable minor having a reflective surface arranged to receive and reflect a laser beam to form a reflected laser beam, a beam splitter arranged to separate the reflected laser beam into a first portion and a second portion, a sensor, a focusing system configured to form an image of the reflective surface at the sensor using the first portion of the reflected laser beam, the sensor being configured to output beam data representative of the reflected laser beam, means for generating radiation using the second portion of the reflected laser beam, and a controller operable to cause the deformable mirror to deform the reflective surface based on the beam data.
G03F 7/00 - Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printed surfacesMaterials therefor, e.g. comprising photoresistsApparatus specially adapted therefor
H05G 2/00 - Apparatus or processes specially adapted for producing X-rays, not involving X-ray tubes, e.g. involving generation of a plasma
84.
SYSTEMS AND METHODS FOR MOTION CONTROL OF A PATTERNING DEVICE IN A LITHOGRAPHY APPARATUS
A reticle is typically clamped to a chuck in a lithography apparatus by clamps. The force provided by the clamps may limit how fast the reticle can accelerate (e.g., if the reticle accelerates too quickly, momentum of the reticle may break the clamping force and the reticle may slip on the chuck). A new motion control system is described, which applies a pushing force to the reticle during acceleration, to keep the reticle in its intended position during movement. The system comprises a first portion coupled to a short stroke stage of the lithography apparatus and a second portion coupled to a long stroke stage. The first portion is configured to push on the reticle so that it stays in its intended position. The second portion is configured to interact with the first portion to cause the first portion to support the reticle.
G03F 7/00 - Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printed surfacesMaterials therefor, e.g. comprising photoresistsApparatus specially adapted therefor
85.
METHOD FOR CONTROLLING A PRODUCTION SYSTEM AND METHOD FOR THERMALLY CONTROLLING AT LEAST PART OF AN ENVIRONMENT
A method of generating control actions for controlling a production system, such as by transmitting the control actions to a control system of the production system. The method includes receiving, by a memory unit, a set of observation data characterizing a current state of the production system; processing, by a first neural network module of the memory unit, an input based on at least part of the observation data to generate encoded observation data; updating, by a second neural network module of the memory unit, history information stored in an internal memory of the second module using an input based on at least part of the observation data; obtaining, based on the encoded observation data and the updated history information, state data; and generating, based on the state data, one or more control actions.
G03F 7/00 - Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printed surfacesMaterials therefor, e.g. comprising photoresistsApparatus specially adapted therefor
G06N 3/044 - Recurrent networks, e.g. Hopfield networks
An assembly for a lithographic apparatus, wherein the assembly is configured to heat a pellicle membrane by one of or a combination selected from: i) provision of heated gas, ii) radiative heating, iii) resistive heating, and/or iv) inductive heating, and/or by illuminating the pellicle membrane with light having a wavelength of from around 91 nm to around 590 nm. Also a method of extending the operative lifespan of a pellicle membrane, the method including heating at least a portion of a pellicle membrane when illuminated by EUV by one of or a combination selected from: i) providing heated gas, ii) radiative heating, iii) resistive heating, and/or iv) inductive heating to effect heating of the at least one portion of the pellicle membrane, and/or by illuminating the pellicle membrane with light having a wavelength of from around 91 nm to around 590 nm.
G03F 1/62 - Pellicles or pellicle assemblies, e.g. having membrane on support framePreparation thereof
G03F 7/00 - Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printed surfacesMaterials therefor, e.g. comprising photoresistsApparatus specially adapted therefor
An improved systems and methods for generating a denoised inspection image are disclosed. An improved method for generating a denoised inspection image comprises acquiring an inspection image; generating a first denoised image by executing a first type denoising algorithm on the inspection image; and generating a second denoised image by executing a second type denoising algorithm on the first denoised image.
A heterodyne interferometer system comprises: a first light source providing a first laser beam having a first frequency f1; a second light source providing a second laser beam having a second frequency f2 which differs from the first frequency; a combiner for polarizing the first and second laser beams and for providing an input beam wherein the polarized first and second laser beams are combined; an optical resonator cavity comprising an odd number of at least partially reflective mirrors arranged in the cavity for reflecting and circulating the input beam in the cavity, the cavity being adapted for receiving the input beam and providing an output beam comprising a first spatial mode having the first frequency f1 and a first polarization and a second spatial mode having the second frequency f2 and a second polarization which differs from the first polarization; and a heterodyne interferometer for receiving the output beam.
G01B 9/02003 - Interferometers characterised by controlling or generating intrinsic radiation properties using two or more frequencies using beat frequencies
G01B 9/02001 - Interferometers characterised by controlling or generating intrinsic radiation properties
A lithographic apparatus comprises: a substrate table; a projection system; a gas lock funnel; and a membrane. The substrate table is configured to hold a substrate. The projection system comprises optics configured to project radiation onto a target portion of the substrate. The membrane is supported by the gas lock funnel and arranged between the projection system and the substrate table. The gas lock funnel may defines a nozzle that is arranged to provide a gas in the vicinity of the membrane such that on the projection system side of the membrane the gas is directed preferentially towards a peripheral portion of the gas lock funnel. A final optical element of the projection system may have a central aperture and the nozzle may be arranged to direct the gas preferentially away from the central aperture in the final optical element.
G03F 7/00 - Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printed surfacesMaterials therefor, e.g. comprising photoresistsApparatus specially adapted therefor
90.
MEMBRANE MONITORING APPARATUS AND METHOD, AND LITHOGRAPHIC APPARATUS
A monitoring subsystem for monitoring a membrane in use in a lithographic apparatus, the monitoring subsystem comprising: a light source configured to illuminate the membrane, the membrane being arranged between a first region and a second region of the lithographic apparatus; a light detector configured to measure a total power of light incident on a field of view of the light detector, the light being emitted from the light source and reflected off the membrane; and a controller configured to determine a level of degradation of the membrane at least in part based on the measured total power of light incident on the field of view of the light detector.
G03F 7/00 - Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printed surfacesMaterials therefor, e.g. comprising photoresistsApparatus specially adapted therefor
G03F 1/62 - Pellicles or pellicle assemblies, e.g. having membrane on support framePreparation thereof
Systems and methods for source or mask optimization of a patterning process. Methods may include performing a lithography simulation to predict patterning results; identifying stochastic defects from the predicted patterning results; defining a cost function and a pseudo-gradient; determining a metric of the stochastic defects and the pseudo-gradient for the cost function associated with a performance metric of the patterning process at evaluation locations; and iteratively adjusting the characteristics of the mask or the source based on the metric and the guide function. Methods may include performing a lithography simulation to generate a resist image (RI); determining stochastic errors as a function of a variable bias map (VBM) and the RI; determining a cost function comprising the stochastic errors; determining a gradient of the cost function; and iteratively adjusting the characteristics of the mask or the source based on the gradient of the cost function.
Systems and methods of aligning beams with an aperture array for multi-beam inspection of a sample are disclosed. The method comprises the steps of forming a plurality of primary charged-particle beamlets from a charged-particle beam, positioning a movable aperture plate upstream from a first aperture array in a first position, wherein in the first position, apertures of the movable aperture plate are aligned with corresponding apertures of the first aperture array, adjusting a path of the primary charged-particle beamlets, using a charged-particle beam alignment deflector, to enable a portion of charged particles of the primary charged-particle beamlets to pass through the aligned apertures, resulting in an alignment between the beamlets and the corresponding apertures of the first aperture array, and moving the movable aperture plate in a second position to enable the primary charged-particle beamlets to pass through the first aperture array without passing through the movable aperture plate.
MAX-PLANCK-GESELLSCHAFT ZUR FÖRDERUNG DER WISSENSCHAFTEN E.V. (Germany)
Inventor
Uebel, Patrick, Sebastian
Frosz, Michael, Henoch
Abstract
A method of determining a dimensional parameter of a microstructured optical fiber (MOF), the method comprising: directing radiation towards the MOF; obtaining one or more signals associated with interference of the radiation between structural elements of the MOF; determining a distance between the structural elements based on the one or more signals associated with interference of the radiation between structural elements of the MOF; and determining the dimensional parameter based on the determined distance. A method for obtaining a MOF is also described.
The embodiments of the present disclosure provide a method of processing data derived from a sample, comprising processing an initial data set of elements derived from a detection by a detector for calibration, the data set comprising elements representing nuisance signals and detection signals. The processing of the initial data set comprising: fitting a distribution model to the initial data set to create a nuisance distribution model; setting a signal strength value, and selecting elements in the initial data set having a magnitude greater than the signal strength value as a set of defect candidates; fitting a distribution model to the set of defect candidates to create a defect distribution model of detection signals; and determining a signal strength threshold dependent on at least the defect distribution model. The determining comprising correcting the defect distribution model.
A charged particle-optical device for projecting a plurality of charged particle beams along respective beam paths towards a sample location, the charged particle-optical device comprising: a charged particle-optical assembly configured to manipulate the charged particle beams, the charged particle-optical assembly comprising a first charged particle-optical element comprising a plate having one or more apertures around a beam path of the charged particle beams; and an electrical connector configured to electrically connect the plate of the first charged particle-optical element to an electrical power source, wherein the electrical connector: comprises a shield configured to define a field free region substantially free of electric fields; and is configured to be electrically connectable to a flexible coupling configured to electrically connect the plate of the first charged particle-optical element to the electrical power source, the flexible coupling located within the field free region.
A substrate arrangement for use in a lithographic apparatus, the substrate arrangement including: a resist; a photosensitive resist under-layer; and a substrate, wherein an exposure threshold of the resist under-layer is lower than an exposure threshold of the resist. The resist and the resist under-layer may be both photosensitive to EUV radiation.
G03F 7/095 - Photosensitive materials characterised by structural details, e.g. supports, auxiliary layers having more than one photosensitive layer
G03F 7/11 - Photosensitive materials characterised by structural details, e.g. supports, auxiliary layers having cover layers or intermediate layers, e.g. subbing layers
Described is a method for assessing a plurality of candidate actions for obtaining evidence data and relating to an assessment action of at least one manufacturing apparatus or system, the method comprising: obtaining at least one probabilistic model which relates said evidence data to an estimated probability of one or more root cause assessments of the manufacturing apparatus; determining, using the at least one probabilistic model, an estimated probability of one or more root cause assessments based on evidence data comprising additional evidence from one or more candidate actions which have not been performed (400); determining a reward based on the respective estimated probability of the one or more root cause assessments and an associated respective cost of said one or more candidate actions; and deciding on whether to perform any of said one or more candidate actions based on said reward.
The present disclosure provides a method for real time parameter tuning for a wafer inspection system. The method comprises acquiring one or more input images streamed from the wafer inspection system; applying a plurality of image enhancement parameters to the one or more input image to generate a plurality of images with different characteristics; identifying defects from the plurality of images by applying a plurality of defect detection parameters; and determining, based on the defects identified on the plurality of images, a parameter combination of the plurality of image enhancement parameters and of the plurality of the defect detection parameters to be used for detecting a first defect type.
A transfer line for transferring molten metal from a reservoir to a nozzle is disclosed. The transfer line comprises a plurality of heater zone members in thermal contact with one another. The heater zone members are arranged to maintain a temperature of the metal over the transfer line such that the metal remains in a molten state. The transfer line comprises thermal interconnection members arranged between adjacent ones of the heater zone members. Thermal contact between adjacent heater zone members is provided by the thermal interconnection members.
The invention provides a setpoint generator for a position control system of a positioner comprising a master module and a slave module, the positioner being configured to displace an object, the setpoint generator being configured to, during a displacement of the object: - determine a master setpoint trajectory for the master module; - determine a slave setpoint trajectory for the slave module by means of an optimization algorithm; the optimization algorithm using at least part of the master setpoint trajectory, one or more boundary conditions and an objective function, the objection function being associated with a performance characteristic of the positioner.
G03F 7/00 - Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printed surfacesMaterials therefor, e.g. comprising photoresistsApparatus specially adapted therefor
G05B 19/19 - Numerical control [NC], i.e. automatically operating machines, in particular machine tools, e.g. in a manufacturing environment, so as to execute positioning, movement or co-ordinated operations by means of programme data in numerical form characterised by positioning or contouring control systems, e.g. to control position from one programmed point to another or to control movement along a programmed continuous path
