Methods and systems for training a prediction model to predict a mask image in which mask rule check (MRC) violations or process violations (e.g., edge placement error, sub-resolution assist feature (SRAF) printing) are minimized or eliminated. The prediction model is trained based on a loss function that is indicative of (a) a difference between the predicted mask image and a reference image, and (b) at least one selected from: an MRC evaluation of the predicted mask image or an evaluation of a simulated image of the predicted mask image.
G06F 30/27 - Design optimisation, verification or simulation using machine learning, e.g. artificial intelligence, neural networks, support vector machines [SVM] or training a model
2.
PICTURE MODE RESOLUTION ENHANCEMENT FOR E-BEAM DETECTOR
A charged particle detector includes a plurality of sensing elements, with each sensing element being further divided into sub-sensing elements. The sub-sensing elements may be individually addressed during high-resolution image acquisition in a picture mode, and may be grouped together during high speed detection in a beam mode. The arrangement allows a selectable tradeoff between speed and resolution without introducing significant parasitic parameters.
A structure including a first grating at a first pitch in a first layer of a multi-layer stack structure; and a second grating at a second pitch in a second layer of the multi-layer stack structure, wherein, when illuminated by incident radiation, scattered radiation from the measurement structure forms an interference pattern at a detector, wherein the interference pattern includes at least a first Moire interference component and a second Moire interference component. A method for measuring a parameter of interest in a manufacturing process based on the measurement structure, which includes obtaining an interference pattern for the measurement structure, identifying a first Moire interference component and identifying a second Moire interference component in the interference pattern; and determining the measurement of a parameter of interest based on the first Moire interference component and the second Moire interference component.
G03F 7/00 - Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printed surfacesMaterials therefor, e.g. comprising photoresistsApparatus specially adapted therefor
G03F 9/00 - Registration or positioning of originals, masks, frames, photographic sheets or textured or patterned surfaces, e.g. automatically
A charged particle-optical assembly manipulates one or more charged particle beams. The assembly includes: an upbeam element, a downbeam element and an isolating spacer. The upbeam and down beam elements each include a plate having one or more apertures around a beam path of one or more charged particle beams. The spacer is for electrically isolating the upbeam element and the element from each other. The spacer defines a spacer aperture around the beam path of the one or more charged particle beams. The spacer includes an upbeam portion adjacent to the upbeam element, a downbeam portion adjacent to the downbeam element and an intermediate portion between the upbeam and downbeam portions. The upbeam portion and the downbeam portion protrude relative to the intermediate portion so the spacer aperture has an increased dimension at the intermediate portion compared to the upbeam and downbeam portions.
Semiconductor bonding with better placement accuracy at higher throughputs is described. In some embodiments, a substrate holder operatively associated with a track or turret is used. The substrate holder receives and holds a first substrate, and moves the first substrate through process stations to enable the first substrate to be bonded to a second substrate. The process stations comprise an alignment station and a bonding station. Alignment sensors at the alignment station are configured to determine a position of the first substrate relative to the substrate holder. A controller causes the substrate holder to move along the track or turret to the bonding station, and align the first substrate with the second substrate for bonding based on the position of the first substrate relative to the substrate holder. In some more general embodiments, an array of (electrical) contacts such as bond pads is used for alignment.
G11C 5/04 - Supports for storage elementsMounting or fixing of storage elements on such supports
H01L 21/67 - Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereofApparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components
H01L 21/677 - Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereofApparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components for conveying, e.g. between different work stations
H01L 21/68 - Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereofApparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components for positioning, orientation or alignment
H01L 23/00 - Details of semiconductor or other solid state devices
H01L 23/544 - Marks applied to semiconductor devices, e.g. registration marks, test patterns
An apparatus for training a machine learning model to determine a loss function for use in image analysis includes a memory storing a set of instructions and at least one processor configured to execute the set of instructions to cause the apparatus to perform: encoding an image of a batch of images to determine a first latent space representation; transforming the image; encoding the transformed image to determine a second latent space representation; selecting corresponding parameters from the first latent space representation and the second latent space representation; and determining the loss function over all images in the batch of images based on the selected corresponding parameters from the first latent space representation and the second latent space representation.
A target supply system for a radiation source, wherein the target supply system comprises: a pressure module, configured to pressurise a liquid target material; a conduit, configured to carry liquid target material, fluidly connected to the pressure module; and a bleed module. The bleed module comprises: a vessel; a configurable connector, provided inline with the conduit and connected with the vessel; wherein the configurable connector is switchable between a number of connector configurations, comprising: an operational configuration, wherein fluid passage through the conduit is permitted and fluid passage into the vessel is not permitted; and a bleed configuration, wherein a portion of the conduit is in fluid communication with the vessel.
Semiconductor bonding with better placement accuracy and/or higher throughputs is described. A track comprising a path through a plurality of process stations is used. A plurality of substrate holders are operatively associated with the track. Each substrate holder is configured to receive and hold a first substrate, and move the first substrate through the plurality of process stations to enable the first substrates to be bonded to a second substrate. Each substrate holder comprises a releasable clamp configured to clamp the first substrate to the substrate holder until the first substrate is released to be bonded to the second substrate. Each releasable clamp comprises a certain infrastructure (e.g., vacuum, electricity, etc.) that moves with longer stroke movements in non-planar dimensions along the track (in contrast to a semiconductor process scanner and/or other devices where a substrate holder may be moved in a plane with only relatively short movements).
G11C 5/04 - Supports for storage elementsMounting or fixing of storage elements on such supports
H01L 21/67 - Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereofApparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components
H01L 21/677 - Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereofApparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components for conveying, e.g. between different work stations
H01L 21/683 - Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereofApparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components for supporting or gripping
H01L 21/687 - Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereofApparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches
H01L 23/00 - Details of semiconductor or other solid state devices
H01L 21/68 - Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereofApparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components for positioning, orientation or alignment
Disclosed is a method of determining at least one vertical parameter of interest relating to a structure of interest on a substrate comprising: obtaining first metrology data and/or data derived therefrom, the first metrology data relating to a measurement of the structure of interest when not comprising a layer of interest to which the vertical parameter of interest relates, or a representative structure being representative of the structure of interest when not comprising the layer of interest; obtaining second metrology data relating to a measurement of the structure of interest when comprising the layer of interest; removing the first metrology data and/or data derived therefrom from the second metrology data to obtain residual metrology data; obtaining at least one model to relate the residual metrology data to the vertical parameter of interest; and using the model to derive the vertical parameter of interest from the residual metrology data.
G03F 7/00 - Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printed surfacesMaterials therefor, e.g. comprising photoresistsApparatus specially adapted therefor
G01N 21/956 - Inspecting patterns on the surface of objects
H01L 21/66 - Testing or measuring during manufacture or treatment
09 - Scientific and electric apparatus and instruments
37 - Construction and mining; installation and repair services
42 - Scientific, technological and industrial services, research and design
Goods & Services
Testing apparatus using electron beam for inspection of
semiconductor materials, devices and products. Maintenance of semiconductor inspection tools. Technological supervision and inspection in the field of
quality control of semiconductor wafers and reticles.
An electrolyzer that includes an anode configured for being connected to a first pole of a voltage source; a cathode configured for being connected to a second pole of the voltage source; a fluid inlet configured to allow a flow of fluid to enter the electrolyzer; and a fluid outlet configured to allow the flow to exit the electrolyzer, wherein the electrolyzer is configured to cause the flow to have a flow speed profile along a flow axis with a relatively higher flow speed at the flow axis between the anode and the cathode, wherein the flow speed becomes relatively lower at locations away from the flow axis and more proximate the anode and the cathode, and wherein the electrolyzer has an entrance length that causes the flow speed profile to be at least a partially developed laminar flow when the flow reaches the anode or the cathode.
A fluid dispensing system including a fluid-permeable surface having a pre-defined permeability to allow permeation of a fluid, and a controller configured to control the rate of permeation of the fluid into a volume by controlling one or both of a pressure of the fluid and an exposed surface area of the fluid-permeable surface. Also provided is a method of controlling the dispensing of a fluid, a plasma-generating apparatus including such a fluid dispensing system as well as the use of such a system, method, or apparatus in a lithographic apparatus or process.
Disclosed is a metrology method. The method comprises obtaining measurement data relating to measurement of at least one target using two or more different illumination profiles; and a respective parameter of interest value for a parameter of interest for each of said two or more different illumination profiles. The method described determining, from said measurement data, a respective measurement parameter deviation value for each of said two or more different illumination profiles, said measurement parameter deviation value describing a deviation in a measurement parameter with respect to a measurement parameter value attributed to a region of interest of said target or a sub-target thereof; determining a relationship for the target between the parameter of interest values and the measurement parameter deviation values; and determining one or both of a corrected parameter of interest value and a preferred illumination profile from said relationship.
G03F 7/00 - Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printed surfacesMaterials therefor, e.g. comprising photoresistsApparatus specially adapted therefor
A detector for use in a charged particle device for an assessment tool to detect signal particles from a sample, the detector including a substrate, the substrate including: a semiconductor element configured to detect signal particles above a first energy threshold; and a charge-based element configured to detect signal particles below a second energy threshold.
An alignment system includes a substrate stage, a plurality of sensors, and a control system. The substrate stage supports and moves a substrate having a plurality of substrate alignment marks disposed thereon. The plurality of sensors are arranged on a frame. The control system scans the substrate stage with respect to the frame. The control system controls movement of the substrate stage to correct for any misalignment or pitch mismatch between the plurality of sensors and the plurality of substrate alignment marks based on a known position of individual ones of the plurality of sensors with respect to each other.
A uniformity correction system includes a first set of fingers, a second set of fingers, a first actuator coupled to the first set of fingers to independently move each finger of the first set of fingers, and a second actuator coupled to the second set of fingers to independently move each finger of the second set of fingers. The first and second actuators are arranged in a stacked assembly. Advantageously the stacked assembly can independently control each finger of the first and second sets of fingers into and out of a path of a radiation beam to correct an intensity of the radiation beam, decrease an overall volume (footprint) of the system, increase a transverse stiffness and an actuation speed of the first and second sets of fingers, arrange the first and second sets of fingers in the same plane, and increase cooling of the first and second actuators.
A radiation source for generating EUV light from plasma, comprises a plasma generation region to hold a plasma, a first reflecting body facing the plasma generation region and having a primary focus and a secondary focus, configured to reflect EUV light generated in the plasma generation region to the secondary focus, a second reflecting body facing the plasma generation region, wherein the second reflecting body is configured to reflect the EUV light from the plasma generation region to or near the primary focus and via the first reflecting body to the secondary focus. The radiation source is configured in that in use a self image of the plasma generation region reflected by the second reflecting body is offset relative to the plasma generation region.
H05G 2/00 - Apparatus or processes specially adapted for producing X-rays, not involving X-ray tubes, e.g. involving generation of a plasma
G03F 7/00 - Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printed surfacesMaterials therefor, e.g. comprising photoresistsApparatus specially adapted therefor
18.
SEMICONDUCTOR BONDING DISTORTION ADJUSTMENT SYSTEMS AND METHODS
Semiconductor bonding with better placement accuracy at higher throughputs compared to prior systems is described. Typical substrates (e.g., dies, wafers, and/or other substrates) have some amount of distortion (e.g., translational distortion, rotational distortion, magnification distortion and/or other residual distortion) that needs to be corrected prior to bonding. Advantageously, an actuator is configured to cause adjustment of a first substrate to move a feature from a determined position to an expected position. This aligns the first substrate to a second substrate for bonding. In some embodiments, the actuator is a mechanical and/or thermal actuator configured to cause in plane and/or out of plane deformation of the first substrate and/or the second substrate based on the feature position determination. The feature may be a metrology mark, an electrical contacts, or a patterned semiconductor device structure, for example.
G11C 5/04 - Supports for storage elementsMounting or fixing of storage elements on such supports
H01L 21/67 - Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereofApparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components
H01L 21/677 - Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereofApparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components for conveying, e.g. between different work stations
H01L 21/68 - Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereofApparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components for positioning, orientation or alignment
H01L 23/00 - Details of semiconductor or other solid state devices
H01L 23/544 - Marks applied to semiconductor devices, e.g. registration marks, test patterns
19.
METHOD OF DESIGNING AN OPTICAL COMPONENT FOR COUPLING BROADBAND RADIATION INTO AN OPTICAL FIBER
A method of designing an optical component for coupling a broadband radiation into a first optical fiber, comprising obtaining a radius-wavelength relationship between a collimated beam radius and a wavelength of the broadband radiation in a wavelength range of the broadband radiation; determining a plurality of light-transmitting zones in a transversal plane of the optical component based on the radius-wavelength relationship, wherein the transversal plane is perpendicular to an optical axis of the optical component, and wherein each of the plurality of light-transmitting zones is configured to transmit a different respective wavelength range either overlapping with or falling within the wavelength range of the broadband radiation; and optimizing an efficiency of coupling of the broadband radiation into the optical fiber for each of the different wavelength ranges by varying one or more parameters associated with the optical component.
A bonding detector system comprising a radiation sensor, one or more processors, instructions, or other components is described. The system comprises a radiation sensor configured to generate a signal based on a pattern of diffracted radiation received from a diffraction based alignment mark of a semiconductor die. The instructions cause the one or more processors to determine a position of the diffraction based alignment mark based on the signal; and generate, based on the position, a signal configured to cause alignment of the semiconductor die to a bonding location.
H01L 21/67 - Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereofApparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components
H01L 21/68 - Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereofApparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components for positioning, orientation or alignment
H01L 23/544 - Marks applied to semiconductor devices, e.g. registration marks, test patterns
09 - Scientific and electric apparatus and instruments
Goods & Services
Electronic testing apparatus, data processors, computer
hardware and software for defect inspection of semiconductor
materials, namely, semiconductor wafers and reticles.
09 - Scientific and electric apparatus and instruments
37 - Construction and mining; installation and repair services
42 - Scientific, technological and industrial services, research and design
Goods & Services
Semiconductor manufacturing machines and semiconductor
machinery. Electronic imaging hardware and software in the field of
inspection of semiconductor materials, namely, semiconductor
wafers and reticles; computer hardware and software for
inspection of semiconductor materials, namely, semiconductor
wafers and reticles. Machinery maintenance and repair in the field of
semiconductor industry; installation of semiconductor
machines and semiconductor instruments and apparatus;
installation of machines, instruments and apparatus for the
manufacture of semiconductors. Technological supervision and inspection in the field of
quality control of semiconductor wafers and reticles.
23.
PASSIVE INTEGRATED OPTICAL SYSTEMS AND METHODS FOR REDUCTION OF SPATIAL OPTICAL COHERENCE
Passive integrated optical systems and methods are described. The present systems and methods facilitate reduction of spatial optical coherence in source radiation used for metrology, for example. Current coherence scramblers used for metrology typically include one or more (moving) mechanical components configured to reduce the coherence of source radiation. However, these mechanical coherence scramblers occupy volume within a system and introduce the threat of mechanical wear and/or failure. In contrast, the present systems and methods utilize a combination of passive integrated optical elements to form a coherence scrambler. This reduces or eliminates the use of mechanical components and increases durability, among other advantages.
G03F 7/00 - Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printed surfacesMaterials therefor, e.g. comprising photoresistsApparatus specially adapted therefor
24.
MECHATRONIC SYSTEM CONTROL METHOD, LITHOGRAPHIC APPARATUS CONTROL METHOD AND LITHOGRAPHIC APPARATUS
An embodiment provides a control method for controlling a mechatronic system. The method comprises providing a model of the mechatronic system, the model comprising a disturbance compensation parameter and modifying the disturbance compensation parameter by: obtaining a servo-error of the mechatronic system, obtaining a setpoint of the mechatronic system and determining, based on the setpoint and the model of the mechatronic system comprising the disturbance compensation parameter, a predicted servo-error of the mechatronic system, such that the disturbance compensation parameter is based on a correlation between the servo-error and the predicted servo-error. The method further comprises updating a feedforward transfer function of the mechatronic system based on the modified disturbance compensation parameter and continuously determining a control signal to control the mechatronic system using the updated feedforward transfer function.
G05B 13/04 - Adaptive control systems, i.e. systems automatically adjusting themselves to have a performance which is optimum according to some preassigned criterion electric involving the use of models or simulators
G03F 7/00 - Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printed surfacesMaterials therefor, e.g. comprising photoresistsApparatus specially adapted therefor
G05B 19/19 - Numerical control [NC], i.e. automatically operating machines, in particular machine tools, e.g. in a manufacturing environment, so as to execute positioning, movement or co-ordinated operations by means of programme data in numerical form characterised by positioning or contouring control systems, e.g. to control position from one programmed point to another or to control movement along a programmed continuous path
A nozzle is provided for a droplet generator for a laser-produced plasma radiation source. The nozzle comprises a glass capillary for emitting droplets and a nozzle fitting comprising a throughbore, wherein the glass capillary is at least partially disposed in the throughbore. The nozzle further comprises a glass ferrule coupling the glass capillary to the nozzle fitting, the glass ferrule being conformed to a shape of the throughbore of the nozzle fitting. A method of manufacturing a nozzle for a droplet generator is also provided.
H05G 2/00 - Apparatus or processes specially adapted for producing X-rays, not involving X-ray tubes, e.g. involving generation of a plasma
C03B 29/00 - Reheating glass products for softening or fusing their surfacesFire-polishingFusing of margins
G03F 7/00 - Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printed surfacesMaterials therefor, e.g. comprising photoresistsApparatus specially adapted therefor
26.
METHOD AND APPARATUS FOR CONTACTLESS INSPECTION OF A SUBSTRATE
A device for inspecting a conductive pattern on a substrate includes a plurality of sensor plates, a table configured and arranged to support the substrate, a voltage source configured to generate an electric field between the sensor plates and the conductive pattern on the substrate, an actuator configured to move the sensor plates relative to the substrate, and a controller configured and arranged to identify regions having defect on the basis of changes in capacitance between the sensor plates and the substrate as the sensor plates are moved relative to the substrate.
Methods of identifying a hot spot from a design layout or of predicting whether a pattern in a design layout is defective, using a machine learning model. An example method disclosed herein includes obtaining sets of one or more characteristics of performance of hot spots, respectively, under a plurality of process conditions, respectively, in a device manufacturing process; determining, for each of the process conditions, for each of the hot spots, based on the one or more characteristics under that process condition, whether that hot spot is defective; obtaining a characteristic of each of the process conditions; obtaining a characteristic of each of the hot spots; and training a machine learning model using a training set including the characteristic of one of the process conditions, the characteristic of one of the hot spots, and whether that hot spot is defective under that process condition.
G03F 7/00 - Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printed surfacesMaterials therefor, e.g. comprising photoresistsApparatus specially adapted therefor
G06F 18/28 - Determining representative reference patterns, e.g. by averaging or distortingGenerating dictionaries
G06F 30/20 - Design optimisation, verification or simulation
G06F 30/398 - Design verification or optimisation, e.g. using design rule check [DRC], layout versus schematics [LVS] or finite element methods [FEM]
A method is provided of determining data relating to aberrations, the method comprising: providing a patterning device and a sensor apparatus with a plurality of detector regions; illuminating the patterning device with radiation, wherein each patterned region patterns a measurement beam; sequentially projecting individual patterned measurement beams onto the sensor apparatus to make a measurement of radiation at each detector region which aligns with a patterned region when the patterning device and the sensor apparatus are in a first configuration; moving the patterning device or the sensor apparatus to provide a second configuration; sequentially projecting individual patterned measurement beams onto the sensor apparatus to make a measurement of radiation at each detector region which aligns with a patterned region in the second configuration; and determining, from the radiation measurements, data relating to aberrations caused by the projection system.
09 - Scientific and electric apparatus and instruments
37 - Construction and mining; installation and repair services
42 - Scientific, technological and industrial services, research and design
Goods & Services
Semiconductor manufacturing machines and semiconductor
machinery. Electronic imaging hardware and software in the field of
inspection of semiconductor materials, namely, semiconductor
wafers and reticles; computer hardware and software for
inspection of semiconductor materials, namely, semiconductor
wafers and reticles. Machinery maintenance and repair in the field of
semiconductor industry; installation of semiconductor
machines and semiconductor instruments and apparatus;
installation of machines, instruments and apparatus for the
manufacture of semiconductors. Technological supervision and inspection in the field of
quality control of semiconductor wafers and reticles.
30.
CONFIGURABLE PRINTED OPTICAL ROUTING FOR PARALLEL OPTICAL DETECTION
Disclosed herein are embodiments that relate to a metrology apparatus and associated methods for imaging a plurality of targets (e.g., alignment marks) disposed on of a substrate (550, 650) in parallel using a fixed sensor (510, 530, 610) component that provides electrical, optical, and mechanical connections in combination with a swappable optical routing component (520, 620, 720). The swappable optical routing component (520, 620, 720) allows for target alignment marks to be placed in a field in any desirable configuration.
G03F 7/00 - Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printed surfacesMaterials therefor, e.g. comprising photoresistsApparatus specially adapted therefor
G01B 11/27 - Measuring arrangements characterised by the use of optical techniques for measuring angles or tapersMeasuring arrangements characterised by the use of optical techniques for testing the alignment of axes for testing the alignment of axes
31.
SYSTEM AND METHOD FOR COUNTING PARTICLES ON A DETECTOR DURING INSPECTION
Systems, apparatuses, and methods include a detector including a plurality of detection elements configured to generate an electrical signal in response to a particle being incident on a detection element of the plurality of detection elements; a plurality of current sources configured to drive a current in response to the electrical signal, outputs of the plurality of current sources being connected to enable combining current output by the plurality of current sources to create a combined current, the plurality of current sources being connected to respective ones of the plurality of detection elements; and an analog-to-digital converter (ADC) configured to convert the combined current to a digital value that is indicative of the electrical signals output by the plurality of detection elements.
Disclosed is a pellicle membrane comprising three or more layers, the three or more layers comprising at least one inner layer and at least one outer layer on either side of said at least one inner layer, wherein the at least one inner layer comprises and/or consists of one or more of boron, zirconium, beryllium, niobium, yttrium, molybdenum and/or carbon and/or one or more compounds of each of these materials. Also disclosed is a metrology apparatus which uses such a pellicle membrane as a beamsplitter and/or filter.
G03F 7/00 - Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printed surfacesMaterials therefor, e.g. comprising photoresistsApparatus specially adapted therefor
An inspection system includes a radiation source, first and second optical structures, and a detection system. The radiation source generates beams of radiation. An image formed by the beams includes radiation spots corresponding to the beams. Diameters of the radiation spots is less than a dimension of a target and the radiation spots are non-overlapping. The first optical structure routes the beams toward the target so as to project the radiation spots on the target and generate scattered radiation from the target. The second optical structure collects the scattered radiation from the target. The detection system receives the scattered radiation collected by the second optical structure and generates measurement signals. Each of the measurement signals corresponds to each of the radiation spots.
G03F 7/00 - Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printed surfacesMaterials therefor, e.g. comprising photoresistsApparatus specially adapted therefor
34.
SUBSTRATE HOLDER, LITHOGRAPHIC APPARATUS, DEVICE MANUFACTURING METHOD, AND METHOD OF MANUFACTURING A SUBSTRATE HOLDER
A substrate holder for a lithographic apparatus has a main body having a thin-film stack provided on a surface thereof. The thin-film stack forms an electronic or electric component such as an electrode, a sensor, a heater, a transistor or a logic device, and has a top isolation layer. A plurality of burls to support a substrate are formed on the thin-film stack or in apertures of the thin-film stack.
G03F 7/00 - Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printed surfacesMaterials therefor, e.g. comprising photoresistsApparatus specially adapted therefor
B05D 3/06 - Pretreatment of surfaces to which liquids or other fluent materials are to be appliedAfter-treatment of applied coatings, e.g. intermediate treating of an applied coating preparatory to subsequent applications of liquids or other fluent materials by exposure to radiation
B05D 5/00 - Processes for applying liquids or other fluent materials to surfaces to obtain special surface effects, finishes or structures
B22F 7/06 - Manufacture of composite layers, workpieces, or articles, comprising metallic powder, by sintering the powder, with or without compacting of composite workpieces or articles from parts, e.g. to form tipped tools
B22F 10/00 - Additive manufacturing of workpieces or articles from metallic powder
A broadband radiation source assembly comprising: a pump laser source configured to output a burst of radiation pulses; and an optical fiber comprising an optical medium configured to generate broadband radiation from the radiation pulses via a nonlinear process. Each burst comprises a plurality of radiation pulses. A method of generating broadband radiation is also described.
A method includes measuring a wavefront of a first beam of light on an apparatus to determine a measured aberration of the first beam of light, comparing the measured aberration to a desired aberration, generating a desired mirror profile of a deformable mirror that changes the measured aberration into the desired aberration, and deforming the deformable mirror based on the desired mirror profile. Lithographic apparatuses having various configurations for incorporating a deformable mirror into a lithographic apparatus are also disclosed.
G02B 26/08 - Optical devices or arrangements for the control of light using movable or deformable optical elements for controlling the direction of light
G03F 7/00 - Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printed surfacesMaterials therefor, e.g. comprising photoresistsApparatus specially adapted therefor
37.
DIGITAL HOLOGRAPHY SYSTEM AND METHOD FOR DIFFRACTION BASED ALIGNMENT
A metrology system comprising: an illumination source, the illumination source configured to produce a beam of illumination; wherein at least a first portion of the beam is diffracted by a target and wherein at least a second portion of the beam is not diffracted by the target; a detector, the detector configured to detect a recombination of the first portion of the beam diffracted by the target and the second portion of the beam not diffracted by the target; and a processor operatively connected with the detector, the processor configured to determine a phase and/or amplitude of a waveform of the first portion of the beam after it has interacted with the target based on the recombination detected by the illumination detector.
A system and method for enhanced edge detection in charged particle beam systems such as scanning electron microscopes. The method uses spatial information of the incidence locations of charged particle arrival events on a detector surface to determine when an edge feature is being detected on a sample. An asymmetry parameter, such as shift in the center of mass of a distribution of charged particle arrival events, may be used to determine the presence of an edge feature on a sample surface.
Described herein is a method and system for designing a mask pattern. A system may obtain a set of derived mask patterns and their associated cost data that is indicative of performance cost of the derived mask patterns. The set of derived mask patterns may be derived from (e.g., by perturbing) a reference mask pattern, which is an optimal mask pattern solution generated using a mask optimization process (e.g., inverse lithography solution). The cost data may include wafer-level key performance indicator (KPI) indicative of wafer imaging performance or mask-level KPI indicative of mask pattern evaluation. The set of target patterns to which the set of derived mask patterns correspond, the set of derived mask patterns, and a set of cost data thereof are used as training data to train a mask prediction model to generate a predicted mask pattern for an input target pattern and input cost data.
G03F 7/00 - Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printed surfacesMaterials therefor, e.g. comprising photoresistsApparatus specially adapted therefor
40.
MULTIWAVELENGTH MICRO-OPTICAL PATTERNING PROCESS METROLOGY SYSTEMS AND METHODS
Compact semiconductor patterning metrology is described. To reduce patterning errors, more metrology targets are measured in parallel across a wafer. Parallel measurements using multiple parallel metrology sensors requires smaller and smaller sensors. Photonic integrated circuits are small enough to be used to make these parallel measurements. The photonic integrated circuits described herein comprise an emitter that directs radiation toward a metrology target; receiving micromirrors that receive diffracted orders of radiation from the metrology target; and output waveguides configured to receive the diffracted orders of radiation from the receiving micromirrors, and cause interference of the diffracted orders of radiation in the photonic integrated circuit. A radiation detector is configured to generate a metrology signal based on the interfered diffracted orders of radiation. The photonic integrated circuit facilitates parallel sensing of diffracted radiation from multiple metrology targets, a dense arrangement to form a significantly more compact sensor, and has other advantages.
Systems and methods of measuring of optimizing collection efficiency of secondary charged particles include a multi-beam inspection apparatus configured to scan a sample and including a lens, a detector configured to receive a plurality of secondary charged-particle beams in response to scanning the sample, and a controller including circuitry communicatively coupled to the multi-beam inspection apparatus and the detector, configured to: focus the lens to adjust sizes of secondary beam spots, wherein the secondary beam spots are formed by the plurality of secondary charged-particle beams on the detector; cause, for each secondary charged-particle beam of the plurality of secondary charged-particle beams, outlier charged particles of the each secondary charged-particle beam to not be detected by the detector; and refocus the lens to adjust currents of a portion of the plurality of secondary charged-particle beams detected by the detector, wherein the outlier charged particles do not contribute to the currents.
Systems, apparatuses, and methods for adjusting distortion in images. Embodiments include obtaining a plurality of images; determining alignment differences between a plurality of features on the plurality of images and corresponding features in layout data corresponding to the plurality of images; modeling the alignment differences; and adjusting at least one of: a machine setting corresponding to obtaining the plurality of images; or at least one feature of the plurality of features on at least one image of the plurality of images using the modeling.
Systems and methods of imaging a sample using a charged-particle beam apparatus are disclosed. The apparatus may include a charged-particle source configured to emit charged particles, the emitted charged particles forming a primary charged-particle beam along a primary optical axis; an objective lens comprising a magnetic lens; a charged-particle detector located downstream from the objective lens with respect to a path of the primary charged-particle beam and along a horizontal plane substantially perpendicular to the primary optical axis; and a voltage control plate located between the charged-particle detector and a pole-piece of the magnetic lens. The voltage control plate may comprise a horizontal portion comprising an opening; and an elongated portion extending downward from the opening with respect to the path of the primary charged-particle beam, into a hole of the charged-particle detector.
An improved particle beam inspection apparatus, and more particularly, a particle beam inspection apparatus including an improved load lock unit is disclosed. An improved load lock system may comprise a plurality of supporting structures configured to support a wafer and a conditioning plate including a heat transfer element configured to adjust a temperature of the wafer. The load lock system may further comprise a gas vent configured to provide a gas between the conditioning plate and the wafer and a controller configured to assist with the control of the heat transfer element.
H01L 21/67 - Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereofApparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components
G03F 7/00 - Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printed surfacesMaterials therefor, e.g. comprising photoresistsApparatus specially adapted therefor
A substrate support for supporting a substrate in a lithographic apparatus, the substrate support including: a support body configured to support the substrate; a main body separate from the support body and configured to support the support body, the main body including a thermal conditioner configured to thermally condition the main body and/or support body and/or substrate; and an extractor body surrounding the main body and the support body, the extractor body having an extraction channel configured to extract fluid from near a peripheral part of the substrate.
G03F 7/00 - Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printed surfacesMaterials therefor, e.g. comprising photoresistsApparatus specially adapted therefor
H01L 21/687 - Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereofApparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches
46.
SUBSTRATE HOLDING SYSTEM AND LITHOGRAPHIC APPARATUS
A substrate holding system includes a substrate support configured to support a substrate, a gas source, and a plurality of conduits. The substrate support includes a first port and a plurality of second ports radially outwards of the first port. The first port and the plurality of second ports are configured to be in fluid communication with the gas source. The gas source is configured to supply an inert gas to a region between the substrate and the substrate support via the first port and the plurality of second ports. The substrate holding system is configured such that the inert gas can be supplied to the region between the substrate and the substrate support through the first port or the plurality of second ports. The substrate holding system is configured to extract gas from the region between the substrate and the substrate support through the plurality of second ports.
H01L 21/683 - Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereofApparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components for supporting or gripping
H01L 21/67 - Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereofApparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components
A reflective member for use in an EUV lithographic apparatus, the reflective member including a multilayer stack which comprises a plurality of layers arranged in pairs, wherein: each pair comprises a first layer and a second layer; the first layer is formed of a material that comprises Si; and the second layer is formed of a material that comprises at least two selected from: Ru, Nb, and/or Mo, and wherein the second layer is configured to have, for radiation with a wavelength of approximately 13.5 nm, a refractive index that is less than or equal to 0.92 and an absorption coefficient that is less than or equal to 0.015.
G03F 7/00 - Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printed surfacesMaterials therefor, e.g. comprising photoresistsApparatus specially adapted therefor
48.
METHOD AND APPARATUS FOR DETERMINING A PHYSICAL QUANTITY
A method of determining a physical quantity is disclosed. The method uses a sensor system configured to sample a plurality of positions in parallel, wherein sampling each position uses radiation incident on an object plane patterning device (mark) and an image plane sensor. Each mark comprises a first portion and a second portion, the first portion being different to the second portion, and wherein the first and second portions of at least one of the marks is transposed relative to the first and second portions of the other marks. Each mark corresponds to a different sampling position. The method comprises, for each portion of each mark: performing a first measurement in a first direction; and performing a second measurement in a second direction different to the first direction. Four data sets are determined and subsequently combined to determine the physical parameter.
G03F 7/00 - Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printed surfacesMaterials therefor, e.g. comprising photoresistsApparatus specially adapted therefor
A method to determine an absolute position of a first movable object using an interferometer system is described, said method comprising: providing first and second beams with a first light frequency from a first light source: providing further first and further second beams with a second (tunable) light frequency from a second light source: guiding the first and further first beams along a first axis to a reflective surface of the first object to obtain a first interferometer signal and guiding the second and further second beams along a second axis to a reflective surface of a second object to obtain a second interferometer signal, while changing the tunable frequency, detecting the first and further first interferometer signals detecting the second and further second interferometer signals, determining a first count offset and/or a further first count offset using a non-linear equation, and determining the absolute position of the first object.
G01B 9/02001 - Interferometers characterised by controlling or generating intrinsic radiation properties
G01B 11/00 - Measuring arrangements characterised by the use of optical techniques
G03F 7/00 - Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printed surfacesMaterials therefor, e.g. comprising photoresistsApparatus specially adapted therefor
50.
MODULE FOR A LITHOGRAPHIC APPARATUS, LITHOGRAPHIC APPARATUS AND METHOD FOR CLAMPING A SENSOR MEMBER
Van De Ven, Bastiaan, Lambertus, Wilhelmus, Marinus
Brokken, Dirk
Ramos, André, Filipe, Lemos, Antunes, Palma
Looman, Joris, Maria, Gerardus
Van Vliet, Wilhelmus, Petrus
Verhulp, Bas
Abstract
Disclosed herein is a module for a lithographic apparatus comprising: a component table configured to hold a component; a sensor member; and a sensor clamping mechanism configured to exert an active clamping force for clamping the sensor member relative to the component table. The sensor clamping mechanism may e.g. be configured to exert a vacuum clamping force or an electrostatic clamping force for clamping the sensor member.
A metrology system includes an illumination system, at least one optical element, a detector, and a controller. The illumination system directs a beam of radiation at a target disposed on a substrate. The at least one optical element has a plurality of surface structures comprising at least one of nanopillars, nano-hemispheres, or submicron-scale cones. The plurality of surface structures are arranged with a random or periodic distribution to produce a modified refractive index profile to receive and condition at least a portion of the beam of radiation. The detector receives radiation scattered by the target and generates a measurement signal based on the received radiation. The controller is coupled to the illumination system and the detector. The controller controls a characteristic of the beam of radiation and determines a characteristic of the target based on the measurement signal.
In one aspect of the present disclosure, there is provided a method comprising: placing a reflective mirror into a chamber, the reflective mirror comprising a substrate and a reflective coating on the substrate; generating a vacuum within the chamber; providing a bias to the reflective mirror placed in the chamber; introducing plasma gasses into the chamber; and generating a reactive plasma with the gasses in the chamber while the bias is provided to the reflective mirror in order to form an oxide layer on the reflective coating to passivate the reflective coating. In another aspect of the present disclosure, there is provided a mirror comprising: a substrate; a reflective coating on the substrate; an oxide layer formed on the reflective coating, the oxide layer having an average thickness of greater than 3 nm and a thickness non-uniformity of 0.12 nm or less.
C23C 14/18 - Metallic material, boron or silicon on other inorganic substrates
C03C 17/36 - Surface treatment of glass, e.g. of devitrified glass, not in the form of fibres or filaments, by coating with at least two coatings having different compositions at least one coating being a metal
C03C 23/00 - Other surface treatment of glass not in the form of fibres or filaments
G03F 7/00 - Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printed surfacesMaterials therefor, e.g. comprising photoresistsApparatus specially adapted therefor
Apparatus and methods for obtaining topographical information about a sample surface. In one arrangement, a sensing system includes a group of proximal sensors for measuring positions of respective portions of a sample surface, and a distal sensor positioned more remotely from paths of sub-beams of a multibeam than the proximal sensors. The distal sensor measures a position of a portion of the sample surface relative to the distal sensor. A control system controls a charged particle device to process the sample surface in a multibeam processable area using the multibeam. A stage causes the multibeam processable area to move along a processing path in a reference frame of the sample. The sensing system uses at least the distal sensor to obtain topographical information about the sample surface in a selected portion of the processing path before the multibeam processable area reaches the selected portion of the processing path.
H01J 37/28 - Electron or ion microscopesElectron- or ion-diffraction tubes with scanning beams
G01N 23/2251 - Investigating or analysing materials by the use of wave or particle radiation, e.g. X-rays or neutrons, not covered by groups , or by measuring secondary emission from the material using electron or ion microprobes using incident electron beams, e.g. scanning electron microscopy [SEM]
H01J 37/20 - Means for supporting or positioning the object or the materialMeans for adjusting diaphragms or lenses associated with the support
H01J 37/244 - DetectorsAssociated components or circuits therefor
H01J 37/30 - Electron-beam or ion-beam tubes for localised treatment of objects
54.
SYSTEM, APPARATUS AND METHOD FOR SELECTIVE SURFACE TREATMENT
Disclosed herein is a shielding system for use in a surface treatment process, comprising a first disk and a second disk. The first disk and second disk being arranged substantially parallel to each other. The first disk comprises a slit-shaped opening, the second disk comprises a plurality of openings: and the first and second disk are arranged to move with respect to each other around a common axis. Herewith, the slit can be positioned at one or more openings of the plurality of openings to form a passage through the shielding system.
G03F 7/00 - Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printed surfacesMaterials therefor, e.g. comprising photoresistsApparatus specially adapted therefor
The present disclosure relates to modular assembly for engaging modules of an apparatus together. The assembly comprising two modules configured to be mutually engageable to adjoin each other. The modules each having a body and multiple engagers that are each configured to engage with a corresponding engager of another of the modules and to complete a corresponding verification circuit. Each verification circuit is configured to be closed on engagement of an engager of one of the modules with a corresponding engager of the other of the modules. The engager is configured to be electrically isolated from the body of the one of the two modules, and the corresponding engager is configured to be electrically connected to the body of the other of the two modules.
A radiation filter configured to filter a radiation beam comprising a plurality of wavelengths. The filter comprises a first material and a second material. The second material has a higher transmission for a first wavelength radiation than the first material. The second material is configured to change a phase of the first wavelength radiation. The first material and second material are arranged in a lateral distribution along a surface of the filter, and such that the first wavelength radiation transmitted through the first material and first wavelength radiation transmitted through the second material interfere destructively.
G03F 7/00 - Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printed surfacesMaterials therefor, e.g. comprising photoresistsApparatus specially adapted therefor
57.
CARRIER, ASSESSMENT APPARATUS, AND METHOD OF USING THE CARRIER
The present invention provides a carrier comprising a carrier surface. The carrier surface is configured to face a first major surface of a sample. A second major surface of the sample, opposite the first major surface of the sample, is configured to contact a sample support. The carrier surface comprises a gripping device configured to contact the sample, and to lift the sample away from the sample support.
H01L 21/683 - Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereofApparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components for supporting or gripping
H01L 21/687 - Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereofApparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches
A fluid handling structure configured to confine immersion liquid to an immersion space between the fluid handling structure and a facing surface, comprising: at least one liquid supply opening configured to supply immersion liquid to the immersion space; at least one fluid extraction opening radially outwards of the liquid supply opening and configured to extract fluid from the immersion space, wherein at least one fluid extraction opening is arranged as a fluid extraction shape defined by a plurality of sides and corners; and at least one gas supply opening radially outwards of the fluid extraction opening and configured to supply a gas to the immersion space; the at least one fluid extraction opening is separated from the substrate and/or substrate support by a first separation distance at the sides and by a second separation distance smaller than the first separation distance at least one of the corners.
G03F 7/00 - Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printed surfacesMaterials therefor, e.g. comprising photoresistsApparatus specially adapted therefor
The invention provides a method to correct a positioning measurement signal, the method comprising the steps of: a) obtaining a first positioning measurement signal; b) determining a first vibrational mode of the second element with respect to the first element; c) determining first modal displacement; d) determining a first sensitivity coefficient; e) multiplying the first modal displacement with the first sensitivity coefficient; f) correcting the first positioning measurement signal The invention furthermore provides a position control system for positioning an operative point at a position in space, wherein the position control system is configured to: A. determine a first vibrational mode B. determine first modal displacement C. determine a first sensitivity coefficient D. multiply the first modal displacement with the first sensitivity coefficient to obtain a first correction value; E. control an actuator to position the operative point at a desired position.
A radiation source has a source of target material configured to direct a target material to a plasma formation location, and a radiation source housing with an opening through which EUV radiation can exit the radiation source. A laser system is configured to direct an infrared radiation beam at the plasma formation location to generate EUV radiation when the infrared radiation beam is incident on the target material. The radiation source is configured such that a first portion of the radiation source housing receives a majority of the infrared radiation beam when the infrared radiation beam is not incident upon the target material, and wherein the first portion of the radiation source housing is configured to reflect the infrared radiation from the infrared radiation beam to other portions of the housing which are further away from the opening of the radiation source housing than the first portion.
G03F 7/00 - Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printed surfacesMaterials therefor, e.g. comprising photoresistsApparatus specially adapted therefor
H05G 2/00 - Apparatus or processes specially adapted for producing X-rays, not involving X-ray tubes, e.g. involving generation of a plasma
A freeze valve includes: a valve sleeve defining an axial bore that is in fluid communication with a first fluid port; and a valve body defining an axial opening between an axially-closed end that is received within the axial bore and an axially-open end that is in fluid communication with a second fluid port. The valve body includes one or more through holes formed in a longitudinal section of the valve body at the axially-closed end, each through hole fluidly coupling the axial opening and the axial bore of the valve sleeve.
The disclosure provides a method of forming at least one semiconductor channel for a semiconductor device on a semiconductor substrate. The method comprises: defining at least one recess area within a dielectric layer on said semiconductor substrate; etching said at least one recess area in at least on etching step to obtain at least one recess in said layer; and growing 2D material within said recess to form said semiconductor channel; wherein said steps are performed in situ on said semiconductor substrate where the semiconductor device is to be formed.
Cloin, Christian, Gerardus, Norbertus, Hendricus, Marie
Marvi, Zahra
Van Der Wilk, Ronald
Heijmans, Lucas, Christiaan, Johan
Jansen, Paul
Abstract
An electrostatic clamp system for a component in a lithographic apparatus, the electrostatic clamp system comprising: an electrostatic clamp; at least one electrode associated with the electrostatic clamp; and a measurement circuit configured to measure an AC signal from the at least one electrode indicative of a varying potential of the component.
G03F 7/00 - Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printed surfacesMaterials therefor, e.g. comprising photoresistsApparatus specially adapted therefor
H01L 21/683 - Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereofApparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components for supporting or gripping
64.
METHOD TO DETERMINE GHOST REFLECTIONS IN AN INTERFEROMETER SYSTEM, INTERFEROMETER SYSTEM, PROJECTION SYSTEM AND EXPOSURE APPARATUS
A method to determine ghost reflections in an interferometer system, comprising: providing a first light beam with a fixed light frequency from a first light source; providing a second light beam with a changeable light frequency from a second light source; guiding the first and second light beams at least partially along a first measurement axis to a reflective measurement surface arranged on a first movable object to obtain first and second interferometer signals, while changing the frequency of the second light frequency, detecting at a light detector the first and second interferometer signals, using the first interferometer signal to maintain the movable object in a fixed position, measuring the second light frequency and/or a frequency change of the second light frequency, determining one or more ghost reflections using the second interferometer signal and the second light frequency and/or the frequency change of the second light frequency.
G01B 9/02003 - Interferometers characterised by controlling or generating intrinsic radiation properties using two or more frequencies using beat frequencies
G01B 9/02004 - Interferometers characterised by controlling or generating intrinsic radiation properties using two or more frequencies using frequency scans
G01B 9/02001 - Interferometers characterised by controlling or generating intrinsic radiation properties
G01B 9/02015 - Interferometers characterised by the beam path configuration
TRUMPF LASERSYSTEMS FOR SEMICONDUCTOR MANUFACTURING SE (Germany)
ASML NETHERLANDS B.V. (Netherlands)
Inventor
Schweikert, Sven
Wiesweg, Florian
Dilissen, Ruben Hendrik C
Abstract
The present invention concerns an optical amplifier (2) for amplifying laser radiation (11) comprising a cavity (201) filled with a laser active gas, comprising a screen (205) having a surface arranged in the cavity (201), a camera (207) configured for monitoring the surface of the screen (205) and for providing image data, and an analysis unit (208) configured for detecting particles (300) deposited on the surface of the screen (205) based on the image data provided by the camera (207. The invention further concerns a for monitoring particle contamination in an optical amplifier (2) for amplifying laser radiation (11) comprising a cavity (201) filled with a laser active gas and a screen (205) having a surface arranged in the cavity (201), wherein a camera (207) monitors the surface of the screen (205) and provides image data and an analysis unit (208) detects particles (300) deposited on the surface of the screen (205) based on the image data provided by the camera (205).
H01S 3/00 - Lasers, i.e. devices using stimulated emission of electromagnetic radiation in the infrared, visible or ultraviolet wave range
H01S 3/034 - Optical devices within, or forming part of, the tube, e.g. windows, mirrors
H01S 3/03 - Constructional details of gas laser discharge tubes
G01N 21/94 - Investigating contamination, e.g. dust
H01S 3/036 - Means for obtaining or maintaining the desired gas pressure within the tube, e.g. by gettering or replenishingMeans for circulating the gas, e.g. for equalising the pressure within the tube
H01S 3/07 - Construction or shape of active medium consisting of a plurality of parts, e.g. segments
H01S 3/223 - Gases the active gas being polyatomic, i.e. containing two or more atoms
A micro-electromechanical system, MEMS, device configured to actuate a first part relative to a second part, the MEMS device comprising: a first electrode and a second electrode configured such that, in use, application of a voltage to the first electrode and the second electrode would cause a force to be applied to the first part relative to the second part; and a first baffle configured to prevent ingress of a fluid or transmission of radiation from an environment outside of the MEMS device into a space occupied by the first electrode and the second electrode.
G01B 11/26 - Measuring arrangements characterised by the use of optical techniques for measuring angles or tapersMeasuring arrangements characterised by the use of optical techniques for testing the alignment of axes
G02B 26/08 - Optical devices or arrangements for the control of light using movable or deformable optical elements for controlling the direction of light
G03F 7/00 - Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printed surfacesMaterials therefor, e.g. comprising photoresistsApparatus specially adapted therefor
A beam metrology device for determining at least one characteristic of first radiation and/or at least one characteristic of second radiation, said second radiation being generated via a first nonlinear process upon receiving a first portion of the first radiation; the beam metrology device comprising: a metrology device nonlinear medium configured to receive a second portion of the first radiation and thereby to generate third radiation via a second nonlinear process; at least one detector configured to measure at least one characteristic of the third radiation; and a processing unit operable to determine the at least one characteristic of the first radiation and/or the at least one characteristic of the second radiation based on said at least one characteristic of the third radiation.
G03F 7/00 - Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printed surfacesMaterials therefor, e.g. comprising photoresistsApparatus specially adapted therefor
68.
A METHOD OF LITHOGRAPHY AND ASSOCIATED APPARATUSES
Disclosed is method of determining an actuatable correction for a lithographic process. The method comprises obtaining a modeled error and/or a requested correction, said modeled error relating to an error of said lithographic process and said requested correction comprising a requested correction for said modeled error; and determining said actuatable correction in dependence on from which layer the modeled error originates.
G03F 9/00 - Registration or positioning of originals, masks, frames, photographic sheets or textured or patterned surfaces, e.g. automatically
G03F 7/00 - Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printed surfacesMaterials therefor, e.g. comprising photoresistsApparatus specially adapted therefor
69.
BEAM GUIDING DEVICE FOR GUIDING LASER RADIATION AND LITHOGRAPHY SYSTEM
TRUMPF LASERSYSTEMS FOR SEMICONDUCTOR MANUFACTURING SE (Germany)
ASML NETHERLANDS B.V. (Netherlands)
Inventor
Fröhlich, Sascha
Schilling, Tom
Fröhlich, Benjamin
Gauder, Patrick
Done, Vamshidar
Abstract
The present invention concerns a beam guiding device (200) for guiding laser radiation, comprising a body (201) with an inner beam channel (202), an optical beam guiding element (205), in particular a mirror, that is arranged inside the beam channel and a bracket (203) for holding the body (201), wherein the body (201) is connected to the bracket (203) via a first flexure bearing (207), a second flexure bearing (208) and a revolute joint (209). The invention further concerns a lithography system (101), in particular extreme ultraviolet lithography system, comprising a drive laser (100) with a beam guiding device (200) as mentioned before.
G02B 7/00 - Mountings, adjusting means, or light-tight connections, for optical elements
G02B 7/182 - Mountings, adjusting means, or light-tight connections, for optical elements for prismsMountings, adjusting means, or light-tight connections, for optical elements for mirrors for mirrors
G02B 7/198 - Mountings, adjusting means, or light-tight connections, for optical elements for prismsMountings, adjusting means, or light-tight connections, for optical elements for mirrors for mirrors with means for adjusting the mirror relative to its support
G02B 26/08 - Optical devices or arrangements for the control of light using movable or deformable optical elements for controlling the direction of light
G02B 27/64 - Imaging systems using optical elements for stabilisation of the lateral and angular position of the image
G03F 7/00 - Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printed surfacesMaterials therefor, e.g. comprising photoresistsApparatus specially adapted therefor
70.
FOCUS MEASURMENT AND CONTROL IN METROLOGY AND ASSOCIATED WEDGE ARRANGEMENT
Disclosed is a wedge arrangement comprising a plurality of wedge elements, arranged around an optical axis, the plurality of wedge elements comprising at least a first wedge element, a second wedge element and a third wedge element; wherein: said first wedge element comprises a first optical surface and second optical surface, wherein the first optical surface is planar and non-perpendicular to the optical axis and the second optical surface is non-planar such that said first wedge element has a non-linear thickness change; said second wedge element comprises a third optical surface and fourth optical surface which are each planar and are non-parallel; and said third wedge element comprises a fifth optical surface and sixth optical surface wherein the fifth optical surface is planar and non-perpendicular to the optical axis. Also disclosed is a metrology device which uses such a wedge arrangement in determining focus of measurement radiation during a measurement.
G03F 7/00 - Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printed surfacesMaterials therefor, e.g. comprising photoresistsApparatus specially adapted therefor
There is provided a debris trap structure for an EUV source or EUV utilization apparatus, the debris trap structure including at least one of: i) a heater configured to provide a surface of the debris trap structure at a temperature 100˚C or above; ii) a surface comprising a getter material for tin or lithium; and/or iii) a surface configured to suppress forward scattering of debris. Further provided is a lithographic system comprising an EUV source and an EUV lithographic apparatus comprising such a debris trap structure, sub-system, EUV source, or lithographic apparatus. Also described is a method of mitigating target material contamination in an EUV source or EUV utilization apparatus, the method including providing a debris trap structure and heating a surface of the debris trap structure to at least 100˚C.
G03F 7/00 - Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printed surfacesMaterials therefor, e.g. comprising photoresistsApparatus specially adapted therefor
72.
BEAM GUIDING DEVICE FOR GUIDING LASER RADIATION AND LITHOGRAPHY SYSTEM
TRUMPF LASERSYSTEMS FOR SEMICONDUCTOR MANUFACTURING SE (Germany)
ASML NETHERLANDS B.V. (Netherlands)
Inventor
Janssen, Toni Wil
Struycken, Alexander Matthijs
Gorecki, Dominik Eryk
Morhai, Patrick
Abstract
The present invention concerns a beam guiding device (200) for guiding laser radiation, comprising a body (201) with an inner beam channel (202) and an optical beam guiding element (205), in particular a mirror, that is arranged inside the beam channel (202), wherein at least one sleeve (210, 211) is arranged inside the beam channel (202) such that a gap (207) exists between an outer surface of the sleeve (210, 211) and an inner surface of the body (201) for thermally decoupling the sleeve (210, 211) from the body (201). The present invention further concerns a lithography system (101), in particular extreme ultraviolet lithography system, comprising a drive laser (100) with a beam guiding device (200) as mentioned before.
G02B 7/18 - Mountings, adjusting means, or light-tight connections, for optical elements for prismsMountings, adjusting means, or light-tight connections, for optical elements for mirrors
G03F 7/00 - Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printed surfacesMaterials therefor, e.g. comprising photoresistsApparatus specially adapted therefor
73.
RADIATION TOLERANT DETECTOR ARCHITECTURE FOR CHARGED PARTICLE DETECTION
A detector for a scanning electron microscope (SEM) system comprises a semiconductor substrate, and a switching network formed on the semiconductor substrate and comprising a radiation hardened NMOS transistor, the NMOS transistor comprising a first source/drain diffusion region, a second source/drain diffusion region, and a gate patterned on the semiconductor substrate and encircling one of the first and second source/drain diffusion regions.
Detectors and methods of detecting radiation are disclosed. In one arrangement, a plurality of pixel elements is provided. The pixel elements include respective pixel substrates, collection electrodes and readout circuits. The pixel substrates are configured such that impingement of target radiation on the pixel substrates generates charge carriers in the pixel substrates. The readout circuits are configured to provide an output responsive to collection of the charge carriers by the respective collection electrodes. A control system implements a plurality of selectable resolution modes by controlling potentials applied to control electrodes and the collection electrodes to define a corresponding plurality of mappings between the pixel substrates in which charge carriers are generated and the collection electrodes that collect those charge carriers.
Method of spatially aligning a patterning device and a substrate, wherein the patterning device and the substrate are separated by an optical path including one or more moveable optical components, the method including: projecting a radiation beam from the patterning device along the optical path; performing a displacement of the one or more moveable optical components along a predetermined trajectory; determining an optical characteristic of the radiation beam as received by a sensor on a substrate table supporting the substrate at a plurality of instants during the displacement of the one or more moveable optical components; and spatially aligning the patterning device and the substrate based on the optical characteristic as determined at the plurality of instants.
G03F 9/00 - Registration or positioning of originals, masks, frames, photographic sheets or textured or patterned surfaces, e.g. automatically
G03F 7/00 - Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printed surfacesMaterials therefor, e.g. comprising photoresistsApparatus specially adapted therefor
A method of producing a photonic crystal fiber (PCF) preform, the method including measuring a wall thickness of each of a plurality of preform capillaries along at least a portion of its periphery at one or more axial positions; selecting a number of preform capillaries from the plurality of preform capillaries at least based on a thickness criterion; and placing the selected preform capillaries in a tube to form a PCF preform having at least one ring arrangement including the selected preform capillaries, wherein the selected preform capillaries are oriented such that the portion of each of the selected preform capillaries, within which the measured wall thickness varies from a nominal wall thickness by no more than a maximum thickness variation, faces a longitudinal axis of the tube, the tube being substantially symmetrical about the longitudinal axis.
Disclosed is an apparatus and a method in which multiple, e.g., two or more pulses from a single laser source are applied to source material prior to application of a main ionizing pulse in which the multiple pulses are generated by a common laser source. The first pulse is directed towards the source material when the source material is at a first position and the second pulse is directed towards the source material when the source material is at a second position.
H05G 2/00 - Apparatus or processes specially adapted for producing X-rays, not involving X-ray tubes, e.g. involving generation of a plasma
G02F 1/01 - Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulatingNon-linear optics for the control of the intensity, phase, polarisation or colour
G03F 7/00 - Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printed surfacesMaterials therefor, e.g. comprising photoresistsApparatus specially adapted therefor
A charged particle beam inspection method includes acquiring an image of an alignment mark during a constant velocity stage movement and performing alignment corrections prior to imaging a care area associated with the alignment mark. The alignment mark may be selected to be located on a straight path from a prior care area. The alignment mark may be selected such that it is separated from the care area by a predetermined minimum computation distance so that any alignment corrections may be performed during the constant velocity stage movement.
An end-effector is disclosed for handling a substrate, comprising: a base; a clamping body comprising an actuator configured to switch between a first position, wherein the substrate is fixed in position with respect to the clamping body, and a second position, wherein the substrate is released; a guidance mechanism connecting the clamping body to the base while allowing freedom of movement of the clamping body relative to the base within a predetermined range of motion; and a fixation mechanism for switching a connection between the clamping body and the base between a fixed position, wherein the clamping body is fixated relative to the base, and a free position, wherein the clamping body can move relative to the base.
B25J 19/00 - Accessories fitted to manipulators, e.g. for monitoring, for viewingSafety devices combined with or specially adapted for use in connection with manipulators
H01L 21/687 - Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereofApparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches
80.
METHOD FOR DETERMINING A FAILURE EVENT ON A LITHOGRAPHY SYSTEM AND ASSOCIATED FAILURE DETECTION MODULE
A method for determining a failure event on a lithography system. The method includes decomposing at least one signal generated within the lithography system into a plurality of component signals, each component signal relating to a different respective frequency range; evaluating at least one of the component signals with respect to nominal lithographic system behavior; and identifying any deviation of at least one of the component signals from the nominal lithographic system behavior as a failure event.
G03F 7/00 - Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printed surfacesMaterials therefor, e.g. comprising photoresistsApparatus specially adapted therefor
81.
METHOD AND APPARATUSES FOR FOURIER TRANSFORM SPECTROMETRY
Disclosed is a Fourier-transform spectrometer comprising a beamsplitting arrangement operable to define a first radiation source and a second radiation source from a common radiation source, and at least one detector operable to detect interferogram data as a function of detection position in at least a first detection plane direction of a detection plane, the interferogram data resulting from interference of a first diverging beam emitted from said first radiation source and a second diverging beam emitted from said second radiation source. A processor is operable to: perform a linearization correction to said interferogram data to obtain linearized interferogram data; and Fourier transform the linearized interferogram data to obtain spectral characteristic data relating to the common radiation source.
Disclosed is a method comprising: obtaining measured data relating to at least one measurement by a measurement apparatus configured to irradiate radiation onto each of one or more structures on a substrate: decomposing the measured data using a decomposition method to obtain multiple measured data components: obtaining simulated data relating to at least one simulation based on the one or more structures: decomposing the simulated data using the decomposition method to obtain multiple simulated data components: matching between at least a portion of the simulated data components and at least a portion of the measured data components; and extracting a feature of the substrate based on the matching of at least a portion of the simulated data components and at least a portion of the measured data components.
G03F 7/00 - Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printed surfacesMaterials therefor, e.g. comprising photoresistsApparatus specially adapted therefor
A method for testing an array of devices, each having an electrical connection between two electrodes controllable by a signal applied to a control element, comprises: applying a reference electric potential to a first electrode of the two electrodes of each device; directing a charged particle beam onto a second electrode of the two electrodes of each device; varying a signal applied to the control element of each device; and monitoring, for each signal applied, signal charged particles from the second electrode of each device.
Measuring overlay using a microscope based sensor with dark-field fringe-based imaging is described. The signal from the sensor is an intensity modulated fringe pattern (e.g., an interference pattern) as generated through the cross-interference of two diffraction orders from the metrology target. A metrology target comprises a first metrology mark in a first layer of a patterned substrate (e.g., a semiconductor wafer) and a second metrology mark in a second layer. Parameters associated with the fringes of the intensity modulated fringe pattern are determined, and used to make robust overlay determinations that are compensated for in plane vibrations of the patterned substrate. Advantageously, overlay values for metrology targets are determined based on the parameters, using a multi-parameter optimization based inference of the overlay values for multiple metrology targets together with the parameters related to the diffraction model and the sensor disturbances.
In a semiconductor structure, metrology marks may be covered by non-planar layers, such as resist layers. A resist layer may have tilted or dished areas that distort radiation diffracted by the metrology marks. This reduces measurement accuracy for interferometer based systems. Advantageously, the present systems and methods use an imaging sensor such as a camera (instead of an interferometer) and local signal strength in the distorted diffracted radiation to generate accurate alignment, overlay, and/or other measurements. For example, a camera may generate a metrology signal in the form of an image, based on diffracted radiation received from a metrology mark in a layer of a patterned substrate. Local signal strength may be determined based on the image; and a position of the metrology mark may be determined based on the local signal strength. The local signal strength can be determined in various manners.
G03F 7/00 - Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printed surfacesMaterials therefor, e.g. comprising photoresistsApparatus specially adapted therefor
A masking module for a scanning lithographic apparatus. The masking module comprises at least two masking blades each configured to inhibit the transmission of at least a portion of electromagnetic radiation from a patterning device to a substrate during a scanning operation, wherein the at least two masking blades are in mechanical connection with one another. The masking module further comprises a driver configured to move the masking blades in a scanning direction during the scanning operation.
G03F 7/00 - Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printed surfacesMaterials therefor, e.g. comprising photoresistsApparatus specially adapted therefor
A charged particle-optical module (200) for a plurality of charged particle-optical devices configured to direct charged particle beams along respective beam paths towards a sample location, the charged particle-optical module comprising: at least one emitter (21) arranged at an emission surface (80) of an emitter layer, each emitter configured to emit charged particles for a source beam; at least one extractor electrode (27) for the at least one emitter, wherein the at least one extractor electrode is planar and a beam aperture is defined in each extractor electrode for the charged particles emitted by the respective emitter; and a spacer (88) configured to space each extractor electrode from the emission surface, wherein the spacer is an electrical insulator and comprises an insulator surface (94) between the extractor electrode and the emission surface, wherein at least part of the insulator surface is angled relative to a direction perpendicular to the emission surface.
STICHTING NEDERLANDSE WETENSCHAPPELIJK ONDERZOEK INSTITUTEN (Netherlands)
UNIVERSITEIT VAN AMSTERDAM (Netherlands)
RIJKSUNIVERSITEIT GRONINGEN (Netherlands)
ASML NETHERLANDS B.V. (Netherlands)
Inventor
De Lange, Stan Johannes Jacobus
Sheil, John
Versolato, Oscar, Oreste
Purvis, Michael, Anthony
Brown, Daniel, John, William
Abstract
A method of generating extreme ultraviolet (EUV) radiation comprising directing laser pulses of a laser beam onto tin targets to generate EUV emitting plasma, wherein the laser pulses have a duration of at least 150 ns and have a wavelength between 1.6 microns and 2.5 microns.
A charged particle-optical module 200 for a charged particle-optical device configured to direct a charged particle beam along a beam path towards a sample location, the charged particle-optical module comprising: an emitter 21 configured to emit a source beam of charged particles along a source path; a plurality of charged particle-optical plate elements 24-26 configured to operate on the source beam, wherein in each charged particle-optical plate element are defined: a beam aperture 266 configured for passage of the source beam; and a vent 46 configured to provide gas conductance through the charged particle-optical plate element, so as to maintain a vacuum within the charged particle-optical module; and a vacuum chamber in which are located the emitter and the plurality of charged particle-optical plate elements, the vacuum chamber configured to maintain, in use, a source underpressure.
An electrostatic clamp for clamping a substrate (e.g. a silicon wafer) comprises: a body; at least one central electrode; and at least one peripheral electrode. The body defines a surface and a plurality of protrusions (also known as burls) extend from the surface. The plurality of protrusions comprises a first, central set of protrusions and a second, peripheral set of protrusions. The at least one central electrode is adjacent the first, central set of protrusions and the at least one peripheral electrode is adjacent the second, peripheral set of protrusions. The second, peripheral set of protrusions extend farther from the surface than the first, central set of protrusions. That is the outermost burls have a greater height that the central burls. The second, peripheral set of protrusions may have a smaller stiffness than the first, central set of protrusions in a direction that is generally parallel to the protrusions.
G03F 7/00 - Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printed surfacesMaterials therefor, e.g. comprising photoresistsApparatus specially adapted therefor
H01L 21/683 - Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereofApparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components for supporting or gripping
H01L 21/687 - Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereofApparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches
91.
PELLICLE MEMBRANE FOR AN EUV UTILIZATION APPARATUS AND METHOD OF MANUFACTURING THEREOF
There is provided a membrane for use as pellicle in EUV utilization apparatus, the membrane comprising randomly oriented non-coated carbon nanotubes having one or both of: i) an average diameter less than 5 nm and a bundle (average) diameter of less than 30 nm, wherein the Young's modulus of the membrane is larger than 10MPa; and ii) surface features that provide roughness to the nanotubes, such that relative movement of the CNT tubes in the film is substantially blocked or inhibited. Also provided is a pellicle for an EUV utilization apparatus, the pellicle including such a membrane and a support frame for supporting the membrane, as well as an EUV utilization apparatus comprising such a membrane or pellicle. There is also provided a method of manufacturing a membrane for an EUV utilization apparatus.
G03F 1/62 - Pellicles or pellicle assemblies, e.g. having membrane on support framePreparation thereof
G03F 7/00 - Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printed surfacesMaterials therefor, e.g. comprising photoresistsApparatus specially adapted therefor
92.
METROLOGY IMPROVEMENT FOR PATTERN-EDGE BASED MEASUREMENTS
A method for metrology may include receiving an inspection image of a structure on a sample, extracting a gray level value profile associated with the structure from the received inspection image, and determining a critical dimension of the structure from the extracted gray level value profile based on a threshold value. The threshold value may be determined from multiple gray level value profiles associated with the structure and may be indicative of gray level value at a location where a variation between different gray level value profiles of the multiple gray level value profiles is a minimum. And each gray level value profile of the multiple gray level value profiles may be associated with a different apparatus setting.
G03F 7/00 - Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printed surfacesMaterials therefor, e.g. comprising photoresistsApparatus specially adapted therefor
Disclosed is an optical measurement system for measuring a topology of a surface of a substrate. The optical measurement system includes a light projector configured to project a light beam to the surface of the substrate and a light detector configured to receive the light beam from the light projector that has been reflected from the surface. It also includes a mirror relay comprising a convex mirror and a concave mirror arranged to reflect the light beam in a substantially radial direction and at least partially in a lateral direction to cause multiple lateral reflections between the concave mirror and the convex mirror that extend a path length of the light beam between the light projector and the light detector and increase a field of view of the optical measurement system at the surface.
The invention provides an acoustic damping device, comprising: an outer shell enclosing a flow channel having a first end to be connected to a liquid inlet and a second end to be connected to a liquid outlet, and an inner tube arranged within the outer shell, wherein a damping space is defined within the inner tube, 5 wherein the flow channel runs between the inner tube and the outer shell, and wherein the inner tube is at least partially made of elastic or viscoelastic material to damp pressure waves in fluid flowing through the flow channel.
G03F 7/00 - Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printed surfacesMaterials therefor, e.g. comprising photoresistsApparatus specially adapted therefor
Disclosed are systems and methods for producing extreme ultraviolet (EUV) radiation from a target material in a vessel in which gas flows carry target material vapor and debris and deposit some of the target material on surfaces within the vessel including interior surfaces of an exhaust port and in which measures are adopted to reduce the amount of deposited target material that is able to reenter the gas flows.
H05G 2/00 - Apparatus or processes specially adapted for producing X-rays, not involving X-ray tubes, e.g. involving generation of a plasma
G03F 7/00 - Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printed surfacesMaterials therefor, e.g. comprising photoresistsApparatus specially adapted therefor
An electrostatic clamp is disclosed. The electrostatic clamp is for holding an object by electrostatic force. The clamp comprises a first conductive element and a second conductive element disposed between the first conductive element and a plane in which the object is held. The second conductive element is separated from the first conductive element by less than 100 micrometres. Also disclosed is a method of manufacturing an electrostatic clamp for holding an object by electrostatic force in a lithographic apparatus.
G03F 7/00 - Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printed surfacesMaterials therefor, e.g. comprising photoresistsApparatus specially adapted therefor
H01L 21/683 - Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereofApparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components for supporting or gripping
H01L 21/687 - Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereofApparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches
A method and system architecture for generating extreme ultraviolet (EUV) radiation. The method comprises directing laser pulses onto tin targets to generate plasma that emits EUV radiation. In some examples, the laser pulses are controlled to have a duration of at least 80 ns and a wavelength between 1.6 microns and 2.5 microns.
A method for source mask optimization or mask only optimization used to image a pattern onto a substrate is described. The method comprises determining a non-uniform illumination intensity profile for illumination from an illumination source; and determining one or more adjustments for the pattern based on the non-uniform illumination intensity profile until a determination that features patterned onto the substrate substantially match a target design. The non-uniform illumination intensity profile may be determined based on an illumination source and the projection optics of a lithographic apparatus. In some embodiments, the projection optics comprise a slit, and the non-uniform illumination profile is a through slit non-uniform illumination intensity profile. Determining the one or more adjustments for the pattern may comprise performing optical proximity correction, for example.
G03F 1/70 - Adapting basic layout or design of masks to lithographic process requirements, e.g. second iteration correction of mask patterns for imaging
G03F 1/36 - Masks having proximity correction featuresPreparation thereof, e.g. optical proximity correction [OPC] design processes
A metrology and control system (100, 400, 500) for a laser beam in an EUV radiation source is disclosed. The system comprises an optical pickup (405, 540, 550) configured to measure a forward beam (410, 510, 520, 530) directed towards a target location (420, 535) and a return beam (415) reflected from the target location. The system also comprises actuatable optical devices (425, 430, 435, 465, 475, 555, 560, 565) configurable to direct and focus the forward beam onto the target location and align a measurement plane of the optical pickup with the target location. The actuatable optical devices are disposed before and after the optical pickup in a path of the forward beam, and the actuatable optical devices are controlled in response to a measurement of the forward beam and the return beam by the optical pickup.
G03F 7/00 - Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printed surfacesMaterials therefor, e.g. comprising photoresistsApparatus specially adapted therefor
A method of determining contamination of an optical sensor of a sensing system in a lithographic apparatus, the method comprising directing EUV radiation through an opening in a reticle masking blade (26) and onto a patterning device, projecting reflected EUV radiation onto the sensing system and thereby causing build-up of an area of contamination, measuring a height of the area of contamination and a height of an area of the sensing system which did not receive the reflected EUV radiation, and using the measured heights to determine an amount of contamination on the optical sensor of the sensing system.
G03F 7/00 - Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printed surfacesMaterials therefor, e.g. comprising photoresistsApparatus specially adapted therefor
