Systems, non-transitory computer readable medium, and methods for determining one or more parameters used by an e-beam for an overlay measurement are disclosed. In some embodiments, the method comprises determining an acquisition time for the overlay measurement of a wafer stack based on a plurality of characteristics of the wafer stack and a plurality of backscattered electron (BSE) yields detected at a plurality of features on the wafer stack. The method also comprises determining the one or more parameters including a landing energy of the e-beam based on optimization of the acquisition time for the overlay measurement.
G01N 23/2251 - Recherche ou analyse des matériaux par l'utilisation de rayonnement [ondes ou particules], p. ex. rayons X ou neutrons, non couvertes par les groupes , ou en mesurant l'émission secondaire de matériaux en utilisant des microsondes électroniques ou ioniques en utilisant des faisceaux d’électrons incidents, p. ex. la microscopie électronique à balayage [SEM]
H01J 37/28 - Microscopes électroniques ou ioniquesTubes à diffraction d'électrons ou d'ions avec faisceaux de balayage
Disclosed is an imaging method comprising obtaining a set of primary deconvolution kernels or a set of impulse responses relating to an optical system used to capture said image; obtaining said image signal, said image signal being subject to one or more imaging effects including at least one or more non-isoplanatic imaging effects; performing a low-rank approximation on said set of primary deconvolution kernels or impulse responses to determine respectively a set of deconvolution modes or a set of impulse response modes, each deconvolution mode comprising a modal secondary deconvolution kernel and a modal weight function and each impulse response mode comprising a modal impulse response and a modal inverse weight function; obtaining at least approximated imaging effect-free object information related to said object by applying said modal secondary deconvolution kernels and modal weight functions or said modal impulse responses and modal inverse weight functions to said image signal.
G03F 7/00 - Production par voie photomécanique, p. ex. photolithographique, de surfaces texturées, p. ex. surfaces impriméesMatériaux à cet effet, p. ex. comportant des photoréservesAppareillages spécialement adaptés à cet effet
G01N 21/95 - Recherche de la présence de criques, de défauts ou de souillures caractérisée par le matériau ou la forme de l'objet à analyser
G06T 5/10 - Amélioration ou restauration d'image utilisant le filtrage dans le domaine non spatial
Systems and methods provide the ability to mitigate linear and/or offset coma present in an objective of a metrology tool. A method of reducing an effect of offset coma in a metrology apparatus includes rotating an objective lens element of the metrology apparatus until a best contrast for physically separated first and second portions of a metrology target is determined. A method of reducing an effect of linear coma in a metrology apparatus includes determining an amount of an axially symmetric coma aberration present in a lens system of the metrology device, and moving an optical element of the lens system in an axial z-direction to reduce the determined axially symmetric coma. A lens stop or other lens element may be moved in the z-direction to reduce coma. The two approaches may be combined.
G03F 7/00 - Production par voie photomécanique, p. ex. photolithographique, de surfaces texturées, p. ex. surfaces impriméesMatériaux à cet effet, p. ex. comportant des photoréservesAppareillages spécialement adaptés à cet effet
G03F 9/00 - Mise en registre ou positionnement d'originaux, de masques, de trames, de feuilles photographiques, de surfaces texturées, p. ex. automatique
4.
ELECTRICAL CONNECTOR FOR HIGH POWER IN A VACUUM ENVIRONMENT AND METHOD
The disclosure provides an electrical connector for high power in a low pressure environment, the connector comprising: a male connection part configured to be connected to a first power interface, a female connection part for receiving the male connection part and configured to be connected to a second power interface, a first conductive shield enclosing the male connection part and the female connection part, the first conductive shield being electrically connected to at least one of the male connection part and the female connection part, and an isolating part enclosing the first conductive shield.
H01R 13/53 - Socles ou boîtiers pour dures conditions de serviceSocles ou boîtiers avec des moyens pour éviter l'effet couronne ou l'amorçage d'un arc
G03F 7/00 - Production par voie photomécanique, p. ex. photolithographique, de surfaces texturées, p. ex. surfaces impriméesMatériaux à cet effet, p. ex. comportant des photoréservesAppareillages spécialement adaptés à cet effet
H01R 43/26 - Appareils ou procédés spécialement adaptés à la fabrication, l'assemblage, l'entretien ou la réparation de connecteurs de lignes ou de collecteurs de courant ou pour relier les conducteurs électriques pour engager ou séparer les deux pièces d'un dispositif de couplage
A colour selection module, for outputting radiation having a desired spectral bandwidth and central wavelength, comprises: a radiation input for receiving an input beam of radiation; a first dispersive arrangement for receiving the input beam of radiation from the radiation input and outputting a first dispersed beam of radiation; a second dispersive arrangement for receiving at least a portion of the first dispersed beam of radiation and outputting a second dispersed beam of radiation; a radiation output arrangement for receiving said second dispersed beam of radiation and outputting said second dispersed beam of radiation from the colour selection module, whereby rotation of the second dispersive arrangement changes a second direction of travel and a second spatial distribution of the second dispersed beam of radiation, and hence spectral bandwidth and central wavelength of said second dispersed beam of radiation received and output by the radiation output arrangement.
G03F 7/00 - Production par voie photomécanique, p. ex. photolithographique, de surfaces texturées, p. ex. surfaces impriméesMatériaux à cet effet, p. ex. comportant des photoréservesAppareillages spécialement adaptés à cet effet
G02B 27/10 - Systèmes divisant ou combinant des faisceaux
Described is a method for predicting future evolution of a parameter of interest of a manufacturing process for manufacturing integrated circuits, the method comprising: obtaining metrology data relating to the parameter of interest; forecasting a first statistical characteristic of future values of the parameter of interest by applying a first parameter model to the metrology data and subsequently obtaining residuals data of the first parameter model; forecasting a second statistical characteristic of future values of the parameter of interest by applying a second parameter model to the residuals data of the first parameter model; and predicting the future evolution of the parameter of interest of the manufacturing process based on comparison of at least one of the first statistical characteristic and the second statistical characteristic to at least one reference value.
G03F 7/00 - Production par voie photomécanique, p. ex. photolithographique, de surfaces texturées, p. ex. surfaces impriméesMatériaux à cet effet, p. ex. comportant des photoréservesAppareillages spécialement adaptés à cet effet
G05B 13/04 - Systèmes de commande adaptatifs, c.-à-d. systèmes se réglant eux-mêmes automatiquement pour obtenir un rendement optimal suivant un critère prédéterminé électriques impliquant l'usage de modèles ou de simulateurs
7.
METHOD FOR CONTROLLING A MANUFACTURING APPARATUS AND ASSOCIATED APPARATUSES
Disclosed is a method for determining a correction for control of at least one manufacturing apparatus used in a manufacturing process for providing structures to at least one region on a substrate, said region comprising at least a first sub-region and a second sub-region in a common layer. The method comprises obtaining process error data relating to said manufacturing process when forming said first sub-region on a substrate, determining a first on-product error from said process error data, said on-product error relating to an error in formation of said first sub-region; and determining, from said on-product error, a correction for said manufacturing process when forming said second sub-region on said substrate.
G03F 7/00 - Production par voie photomécanique, p. ex. photolithographique, de surfaces texturées, p. ex. surfaces impriméesMatériaux à cet effet, p. ex. comportant des photoréservesAppareillages spécialement adaptés à cet effet
8.
WAFER EDGE INSPECTION OF CHARGED PARTICLE INSPECTION SYSTEM
An improved system is disclosed for wafer outer portion inspection in a charged particle beam system, such as a scanning electron microscope (SEM). The system uses multiple conductive rings around the wafer to correct an e-field distortion occurring at the wafer outer portion. The rings are applied with different complimentary voltages in order achieve a precise compensation of the e-field distortion.
H01J 37/02 - Tubes à décharge pourvus de moyens permettant l'introduction d'objets ou d'un matériau à exposer à la décharge, p. ex. pour y subir un examen ou un traitement Détails
H01J 37/20 - Moyens de support ou de mise en position de l'objet ou du matériauMoyens de réglage de diaphragmes ou de lentilles associées au support
9.
METHODS FOR MEASURING AT LEAST ONE TARGET ON A SUBSTRATE AND ASSOCIATED APPARATUSES AND SUBSTRATE
Disclosed is a method of determining a correction for a measurement of at least one target on a substrate, the target comprising one or more parameter of interest sensitive sub-targets which are each sensitive to a parameter of interest and one or more parameter of interest insensitive sub-targets which are substantially less sensitive or insensitive to the parameter of interest, the method comprising. The method comprises obtaining a respective first measurement parameter value relating to each of said one or more parameter of interest sensitive sub-targets; obtaining a respective second measurement parameter value relating to each of said one or more parameter of interest insensitive sub-targets; and determining a correction for each said first measurement parameter value using said second measurement parameter values and/or detecting the presence of an effect likely to impact accuracy of first measurement parameter values from said second measurement parameter values.
G03F 7/00 - Production par voie photomécanique, p. ex. photolithographique, de surfaces texturées, p. ex. surfaces impriméesMatériaux à cet effet, p. ex. comportant des photoréservesAppareillages spécialement adaptés à cet effet
A method of calibrating analog-to-digital converters, ADCs, of a charged particle-optical device comprises: providing, for each of the ADCs, image data of charged particles detected from a sample output by the ADC; calculating, for each of the ADCs, at least one statistical value from a distribution of the image data output by the ADC; and changing at least one setting of at least one of the ADCs based on the calculated at least one statistical values so as to compensate for any mismatch between the at least one statistical value of the ADCs.
A multi-beam apparatus for observing a sample with high resolution and high throughput is proposed. In the apparatus, a source-conversion unit forms plural and parallel images of one single electron source by deflecting plural beamlets of a parallel primary-electron beam therefrom, and one objective lens focuses the plural deflected beamlets onto a sample surface and forms plural probe spots thereon. A movable condenser lens is used to collimate the primary-electron beam and vary the currents of the plural probe spots, a pre-beamlet-forming means weakens the Coulomb effect of the primary-electron beam, and the source-conversion unit minimizes the sizes of the plural probe spots by minimizing and compensating the off-axis aberrations of the objective lens and condenser lens.
A method for determining an impact of a variation of a first pupil from a target pupil (for example a dipole) in a first direction within a two-dimensional field is disclosed. The method comprises carrying out the following for a plurality of positions within the field. First, reference and signal measurements are made of a quantity indicative of a position/orientation of an aerial image using a reference pupil and the first pupil. Second, a first error is determined as a difference between the reference measurement and the signal measurement. Third, the first error is corrected for a difference that is attributable to the difference between the reference pupil and the target pupil so as to form a second error. The second error quantifies the difference attributable to the variation of the first pupil from the target pupil across the field.
G03F 7/00 - Production par voie photomécanique, p. ex. photolithographique, de surfaces texturées, p. ex. surfaces impriméesMatériaux à cet effet, p. ex. comportant des photoréservesAppareillages spécialement adaptés à cet effet
A pellicle for EUV lithography includes a core layer having silicon and having at least one non-oxidised surface, and a cap layer at at least one major surface of the core layer. The cap layer includes carbon and/or boron. The cap layer may be removed before or during an exposure operation.
G03F 1/22 - Masques ou masques vierges d'imagerie par rayonnement d'une longueur d'onde de 100 nm ou moins, p. ex. masques pour rayons X, masques en extrême ultra violet [EUV]Leur préparation
G03F 7/00 - Production par voie photomécanique, p. ex. photolithographique, de surfaces texturées, p. ex. surfaces impriméesMatériaux à cet effet, p. ex. comportant des photoréservesAppareillages spécialement adaptés à cet effet
A target material generator includes a fluid flow path between reservoir system and a nozzle supply system, and a coupling assembly in the fluid flow path. The target material generator is a part of an extreme ultraviolet light source. The coupling assembly includes a first fitting coupled to a second fitting to thereby form a flow conduit along the fluid flow path, wherein a seal is formed between the first fitting and the second fitting, and a sleeve disposed along inner walls of the flow conduit and between the seal and the flow conduit such that a contaminant trap is formed between the sleeve and the seal.
H05G 2/00 - Appareils ou procédés spécialement adaptés à la production de rayons X, n'utilisant pas de tubes à rayons X, p. ex. utilisant la génération d'un plasma
A system and method for defect inspection using voltage contrast in a charged particle system are provided. Some embodiments of the system and method include positioning the stage at a first position to enable a first beam of the plurality of beams to scan a first surface area of the wafer at a first time to generate a first image associated with the first surface area; positioning the stage at a second position to enable a second beam of the plurality of beams to scan the first surface area at a second time to generate a second image associated with the first surface area; and comparing the first image with the second image to enable detecting whether a defect is identified in the first surface area of the wafer.
Disclosed herein is a method comprising: determining parameters of a recipe of charged particle beam inspection of a region on a sample, based on a second set of characteristics of the sample; inspecting the region using the recipe.
H01J 37/28 - Microscopes électroniques ou ioniquesTubes à diffraction d'électrons ou d'ions avec faisceaux de balayage
H01L 21/67 - Appareils spécialement adaptés pour la manipulation des dispositifs à semi-conducteurs ou des dispositifs électriques à l'état solide pendant leur fabrication ou leur traitementAppareils spécialement adaptés pour la manipulation des plaquettes pendant la fabrication ou le traitement des dispositifs à semi-conducteurs ou des dispositifs électriques à l'état solide ou de leurs composants
17.
COOLING DEVICE FOR COOLING A POSITION-SENSITIVE COMPONENT OF A LITHOGRAPHY SYSTEM
A cooling device (200) for cooling a position-sensitive component (102) of a lithography system (1), comprising a cooling line (206) with a liquid chamber (218) for conducting a cooling liquid (112) to the position-sensitive component (102) and a gas chamber (220) for receiving a gas (222), and an elastic separating membrane (224) which is arranged inside the cooling line (206) and separates the gas chamber (220) from the liquid chamber (218).
G03F 7/00 - Production par voie photomécanique, p. ex. photolithographique, de surfaces texturées, p. ex. surfaces impriméesMatériaux à cet effet, p. ex. comportant des photoréservesAppareillages spécialement adaptés à cet effet
There is provided a method of configuring a lithographic apparatus comprising illuminator optics for directing at least a portion of a radiation beam to an illumination region of a patterning device so as to impart a pattern to the radiation beam and form a patterned radiation beam, the method comprising: configuring the illuminator optics such that at least two different portions of the patterning device, differing at least in position along a scanning direction of said illumination region, receive radiation from different regions of the illuminator optics within a pupil plane associated with the illuminator optics.
G03F 7/00 - Production par voie photomécanique, p. ex. photolithographique, de surfaces texturées, p. ex. surfaces impriméesMatériaux à cet effet, p. ex. comportant des photoréservesAppareillages spécialement adaptés à cet effet
G02B 5/09 - Miroirs à facettes multiples ou polygonales
G02B 26/08 - Dispositifs ou dispositions optiques pour la commande de la lumière utilisant des éléments optiques mobiles ou déformables pour commander la direction de la lumière
19.
ELECTRON ENERGY FLUCTUATION STABILIZING AND COMPENSATING METHODS AND TECHNIQUES FOR ELECTRON-BEAM SYSTEMS
A method of particle beam parameter variation compensation for image inspection and enhancement are disclosed. Embodiments of the disclosure may provide a charged-particle beam parameter variation compensation method to correct electron source and electron beamlet fluctuations. Some embodiments of the disclosure may provide a method of monitoring an electrical signal of an electron source in real-time for fluctuations outside a threshold value and applying an adjustment signal to a component of a charged-particle beam apparatus based on the monitored electrical signal. The fluctuations of an electron beamlet may result from fluctuations of the electron source. This real-time fluctuation data may be used to adjust an image to remove unwanted noise and enable improved inspection accuracy and associated improved accuracy of metrology measurements.
A method for determining a measurement recipe for measuring a parameter of interest from a compound structure on a substrate. The method includes obtaining first training data relating to measurements of reference targets, the targets including: parameter of interest targets, each parameter of interest target having an induced set value which is varied over the parameter of interest targets; and one or more isolated feature targets, each including repetitions of one or more features. Second training data is obtained, the second training data including compound structure measurement signals obtained from measurement of one or more instances of the compound structure. One or more machine learning models are trained using the first training data and second training data to infer a value for the parameter of interest from a measurement signal related to the compound structure corrected for a feature asymmetry contribution.
G03F 7/00 - Production par voie photomécanique, p. ex. photolithographique, de surfaces texturées, p. ex. surfaces impriméesMatériaux à cet effet, p. ex. comportant des photoréservesAppareillages spécialement adaptés à cet effet
An apparatus for adjusting the transmissivity of a pellicle membrane, the apparatus including an etching unit configured to etch material from the pellicle membrane, and a controller configured to control the etching unit to etch the pellicle membrane based on a predicted and/or observed wear pattern of the pellicle membrane. Also a method of adjusting the transmissivity of a pellicle membrane as well as a pellicle membrane, a pellicle assembly, and the use of the same.
G03F 1/62 - Pellicules, p. ex. assemblage de pellicules ayant une membrane sur un cadre de supportLeur préparation
G03F 7/00 - Production par voie photomécanique, p. ex. photolithographique, de surfaces texturées, p. ex. surfaces impriméesMatériaux à cet effet, p. ex. comportant des photoréservesAppareillages spécialement adaptés à cet effet
H01J 37/302 - Commande des tubes par une information d'origine externe, p. ex. commande par programme
H01J 37/317 - Tubes à faisceau électronique ou ionique destinés aux traitements localisés d'objets pour modifier les propriétés des objets ou pour leur appliquer des revêtements en couche mince, p. ex. implantation d'ions
22.
SYSTEM AND METHOD FOR OVERLAY METROLOGY WITH REDUCED COHERENCE AND SPECKLE CONTRAST
An infinite impulse response optical filter includes at least one N x N multimode optical coupler and one or more mode-scrambling loops. The at least one N x N multimode optical coupler has N input ports and N output ports. One of the N input ports is coupled to a laser source that generates a light beam. The at least one N x N multimode optical coupler splits the light beam into a plurality of sub-beams divided in an amplitude domain across the N output ports. One of the N output ports is coupled to a detection system. The one or more mode-scrambling loops includes a mode scrambler and couples one of the N output ports to one of the N input ports. The one or more mode-scrambling loops produce a temporal incoherence and a spatial incoherence that reduce a peak power and a speckle contrast of the light beam.
G03F 7/00 - Production par voie photomécanique, p. ex. photolithographique, de surfaces texturées, p. ex. surfaces impriméesMatériaux à cet effet, p. ex. comportant des photoréservesAppareillages spécialement adaptés à cet effet
G02B 27/48 - Systèmes optiques utilisant la granulation produite par laser
G03F 9/00 - Mise en registre ou positionnement d'originaux, de masques, de trames, de feuilles photographiques, de surfaces texturées, p. ex. automatique
23.
INTERNAL LIGHT SOURCE, LITHOGRAPHIC APPARATUS, METROLOGY SYSTEMS, AND METHOD THEREOF
A system includes an optical system, a reflective system, and a detection system. The optical system includes a lens element. The optical system generates a beam of radiation and directs the beam of radiation towards the reflective system. The reflective system directs the beam of radiation towards the lens element. The detection system receives scattered light from the lens element and directs the scattered light to an imaging sensor.
G03F 7/00 - Production par voie photomécanique, p. ex. photolithographique, de surfaces texturées, p. ex. surfaces impriméesMatériaux à cet effet, p. ex. comportant des photoréservesAppareillages spécialement adaptés à cet effet
G01N 21/94 - Recherche de souillures, p. ex. de poussières
24.
METHOD OF WAFER GROUNDING UTILIZING WAFER EDGE BACKSIDE COATING EXCLUSION AREA
Systems and methods are provided for grounding a wafer in a charged particle beam apparatus. The systems and methods include providing an exclusion area in a backside film on the wafer of sufficient size to allow an electrical connection between the wafer and an electrical contact of the charged particle beam apparatus. The systems and methods include contacting a pin body to a surface of the wafer, the wafer having a coating on the surface, and the pin body comprising a first tip and a second tip each extending from the pin body; wherein the contacting takes place at a first exclusion area of the coating by any one of the first tip, the second tip, or any combination thereof.
H01J 37/20 - Moyens de support ou de mise en position de l'objet ou du matériauMoyens de réglage de diaphragmes ou de lentilles associées au support
H01J 37/317 - Tubes à faisceau électronique ou ionique destinés aux traitements localisés d'objets pour modifier les propriétés des objets ou pour leur appliquer des revêtements en couche mince, p. ex. implantation d'ions
H01L 21/02 - Fabrication ou traitement des dispositifs à semi-conducteurs ou de leurs parties constitutives
25.
METHODS RELATED TO AN AUTOENCODER MODEL OR SIMILAR FOR MANUFACTURING PROCESS PARAMETER ESTIMATION
A method for ordering and/or selection of latent elements for modeling low dimensional data within a latent space representation, the low dimensional data being a reduced dimensionality representation of input data as determined by a first model component of a model, comprising the steps of training said model and selecting one of said latent element selections based on said training, said training comprising: reducing a dimensionality of the input data to generate said low dimensional data in said latent space representation; training a second model component of said model for each of one or more latent element selections; and optimizing an approximation of the input data as output by said second model component for each said latent element selection, thereby ranking at least one of said plurality of latent elements in the latent space representation based on a contribution of each latent element to the input data.
An extreme ultraviolet light source includes a laser, a target and a controller. The target may be a fuel droplet. The controller may determine optimal laser-to-droplet alignment positions in two orthogonal directions and update the position of the laser to maintain optimal alignment between the laser and fuel droplet during radiation generation. A method of determining an optimal laser-to-droplet alignment position includes fitting a polynomial to a radiation generation metric that varies based on the laser-to- droplet alignment position, and determining an optimal alignment position for the laser relative to the fuel droplet based on an apex of the polynomial fit; or evaluating commanded laser energy versus laser- to-droplet alignment position across an available alignment space to determine where commanded laser energy is maximum, and determining an optimal alignment position for the laser relative to the fuel droplet so that the alignment space is symmetric between the maximum points.
H05G 2/00 - Appareils ou procédés spécialement adaptés à la production de rayons X, n'utilisant pas de tubes à rayons X, p. ex. utilisant la génération d'un plasma
27.
EXTREME ULTRAVIOLET LIGHT GENERATION SEQUENCE FOR AN EXTREME ULTRAVIOLET LIGHT SOURCE
A method for selecting operating parameters of an EUV light source includes selecting a temporal or spatial relationship between a plurality of illuminations of a target by first, second, and third laser beams. The method further includes setting an initial value of a temporal delay between the second laser beam and the third laser beam. The method further includes setting an initial value of an energy of the second laser beam. The method further includes measuring an EUV energy generated by the illuminations of the target based on the initial value of the temporal delay between the second laser beam and the third laser beam and the initial value of the energy of the second laser beam. The method further includes adjusting the temporal delay between the second laser beam and the third laser beam and the energy of the second laser beam in response to the measuring.
H05G 2/00 - Appareils ou procédés spécialement adaptés à la production de rayons X, n'utilisant pas de tubes à rayons X, p. ex. utilisant la génération d'un plasma
28.
METHOD AND SYSTEM FOR MULTI CHANNEL MASK PREDICTION
A method and system for generating a mask pattern as multiple channels of information in which different types of features are generated in different channels of information. A target pattern is input to a machine learning (ML) model, and the ML model is executed to generate an output having multiple channels of information associated with a mask pattern corresponding to the target pattern. The multiple channels include: (a) a first channel that is configured to generate first mask information corresponding to main features to be printed on a substrate, and (b) a second channel that is configured to generate second mask information corresponding to sub-resolution assist features (SRAFs). The ML model may be trained by using a cost function configured to penalize a violation of a specified distance to be maintained between a predicted main feature and a predicted SRAF.
G03F 1/36 - Masques à correction d'effets de proximitéLeur préparation, p. ex. procédés de conception à correction d'effets de proximité [OPC optical proximity correction]
G03F 7/00 - Production par voie photomécanique, p. ex. photolithographique, de surfaces texturées, p. ex. surfaces impriméesMatériaux à cet effet, p. ex. comportant des photoréservesAppareillages spécialement adaptés à cet effet
Disclosed is an illumination module for a metrology device. The illumination module comprises a configurable illumination module operable to provide measurement illumination over a configurable range of illumination angles, a grating light valve module for controllably configuring a spectral configuration of the measurement illumination; and a controller operable to control the configurable illumination module and the grating light valve module such that the spectral configuration of the measurement illumination is varied in dependence with illumination angle within the range of illumination angles so as to obtain a desired detection condition for detection of diffracted radiation from a diffractive structure resultant from a measurement of the diffractive structure using the measurement illumination.
G03F 7/00 - Production par voie photomécanique, p. ex. photolithographique, de surfaces texturées, p. ex. surfaces impriméesMatériaux à cet effet, p. ex. comportant des photoréservesAppareillages spécialement adaptés à cet effet
G01B 11/27 - Dispositions pour la mesure caractérisées par l'utilisation de techniques optiques pour mesurer des angles ou des cônesDispositions pour la mesure caractérisées par l'utilisation de techniques optiques pour tester l'alignement des axes pour tester l'alignement des axes
30.
APPARATUS AND PROCESS FOR REDUCED DEPOSITION IN LIGHT SOURCE
A process for generating EUV radiation in an EUV light source includes: during a first period, mis- timing of light pulses in the EUV light source relative to a target material, resulting in a target material hit rate of zero during the first period and no production of EUV light; and, during a transition period following the first period, ramping up the target hit rate in the EUV light source.
H05G 2/00 - Appareils ou procédés spécialement adaptés à la production de rayons X, n'utilisant pas de tubes à rayons X, p. ex. utilisant la génération d'un plasma
31.
METHOD AND APPARATUS FOR ASSESSING A SAMPLE SURFACE, METHOD OF SCANNING A SAMPLE SURFACE, AND CHARGED PARTICLE ASSESSMENT APPARATUS
The present disclosure provides methods and apparatus relating to assessing a sample surface using charged particles. In one arrangement, a method comprises, at a first region of a sample surface on which is an intended pattern, relative scanning a beam over an elongate row portion of the intended pattern along a first direction to generate a row data set. At a second region of the sample surface on which is a repeat of the intended pattern, the beam is relative scanned over an elongate column portion of the intended pattern along a second direction to generate a column data set. The row data set and the column data set are processed to compare between the row data set and the column data set a common portion of the intended pattern to assess the common portion.
G03F 7/00 - Production par voie photomécanique, p. ex. photolithographique, de surfaces texturées, p. ex. surfaces impriméesMatériaux à cet effet, p. ex. comportant des photoréservesAppareillages spécialement adaptés à cet effet
32.
CHARGING PARTICLE-OPTICAL DEVICE, CHARGED PARTICLE-OPTICAL MODULE, METHOD OF PROJECTING A PLURALITY OF CHARGED PARTICLE BEAMS TOWARDS A SAMPLE
The disclosure relates to apparatus and methods for projecting a plurality of charged particle beams towards a sample, and particularly for projecting the beams with reduced aberrations. In one arrangement, a charged particle-optical device comprises a lens array configured to focus a plurality of beams in a beam grid towards a sample position. A corrector comprises at least two aperture arrays having aperture patterns, including one or more pairs of facing aperture surfaces. Each pair corresponds to a species of correction for a respective aberration of the beam grid. A voltage supply is configured to apply a potential difference between the or each pair of facing aperture surfaces to cause the respective species of correction to be applied, the applied potential difference selectable to define a magnitude of the respective species of correction substantially independently of focusing of the beam grid at a sample position.
An actuator for positioning a motion stage, the actuator comprising a coil and a temperature regulating unit for transferring heat to and from the coil, wherein the temperature regulating unit comprising: a thermal conducting cooling plate provided with a cooling fluid channel; a potting layer surrounding the coil for transferring actuation force, transferring dissipated heat from the coil to the cooling plate and electrically insulating the coil; and a phase-change material arranged proximate to the coil for buffering heat.
H02K 9/19 - Dispositions de refroidissement ou de ventilation pour machines avec enveloppe fermée et circuit fermé de refroidissement utilisant un agent de refroidissement liquide, p. ex. de l'huile
G03F 7/00 - Production par voie photomécanique, p. ex. photolithographique, de surfaces texturées, p. ex. surfaces impriméesMatériaux à cet effet, p. ex. comportant des photoréservesAppareillages spécialement adaptés à cet effet
H02K 9/22 - Dispositions de refroidissement ou de ventilation par un matériau solide conducteur de la chaleur s'encastrant dans, ou mis en contact avec, le stator ou le rotor, p. ex. des ponts de chaleur
H02K 41/03 - Moteurs synchronesMoteurs pas à pasMoteurs à réluctance
H02K 3/24 - Enroulements caractérisés par la configuration, la forme ou le genre de construction du conducteur, p. ex. avec des conducteurs en barre avec des canaux ou des conduits pour un agent de refroidissement entre les conducteurs
Disclosed is a method for exposing structures onto a plurality of substrates using at least one lithographic apparatus. The method comprises: measuring each substrate of the plurality of substrate in accordance with a set of measurement timings for measurement actions comprised in measuring each substrate; and performing a plurality of exposures on each of said substrates; wherein variation 5 in said set of measurement timings is reduced and/or minimized per substrate of said plurality of substrates.
A lithography system includes a reticle, an optical element, a substrate, a database, and a predictor. The database includes a plurality of heating models for the reticle, optical element, and/or substrate, which are generated offline using a combination of simulated and measured data. The predictor utilizes a heating model in the plurality of heating models to predict reticle, optical element, and/or substrate temperature and deformations before wafer production begins.
A method is disclosed for controlling power supplied to an EUV light source that includes receiving, by a controller, a trigger signal configured to initiate a plurality of pulses from a light source, and synchronizing, by the controller, a power control signal with the trigger signal. The power control signal is configured to control a supply of power to one or more light amplifiers. A controller for a light source and a light source are also disclosed.
G03F 7/00 - Production par voie photomécanique, p. ex. photolithographique, de surfaces texturées, p. ex. surfaces impriméesMatériaux à cet effet, p. ex. comportant des photoréservesAppareillages spécialement adaptés à cet effet
H05G 2/00 - Appareils ou procédés spécialement adaptés à la production de rayons X, n'utilisant pas de tubes à rayons X, p. ex. utilisant la génération d'un plasma
37.
METROLOGY METHOD FOR A DIGITAL HOLOGRAPHIC MICROSCOPE AND ASSOCIATED COMPUTER PROGRAM
A method of monitoring a path-length difference (PLD) between a scattered beam and a reference beam in a digital holographic microscope comprising obtaining at least one hologram image associated with at least a wavelength of the illumination radiation and identifying a point of coincidence for the at least one hologram image, the point of coincidence being a point in the at least one hologram image for which the PLD between the reference beam and the scattered beam of each of said beam pairs is zero.
G03H 1/04 - Procédés ou appareils pour produire des hologrammes
G03H 1/00 - Procédés ou appareils holographiques utilisant la lumière, les infrarouges ou les ultraviolets pour obtenir des hologrammes ou pour en obtenir une imageLeurs détails spécifiques
G03H 1/26 - Procédés ou appareils adaptés spécialement pour produire des hologrammes multiples ou pour en obtenir des images, p. ex. procédés pour l'holographie à plusieurs couleurs
38.
METHOD OF FORMING A PATTERNED LAYER OF MATERIAL, METHOD OF FORMING AN ELECTRONIC DEVICE, APPARATUS FOR FORMING A PATTERNED LAYER OF MATERIAL
The disclosure relates to methods and apparatus for forming a patterned layer of material. In one arrangement, the method comprises providing a substrate having a deposited layer of diamondoids on at least a portion of the substrate. A selected portion of a surface of the substrate is irradiated during a deposition process, the irradiation being such as to locally drive the deposition process in the selected portion and thereby form a patterned layer of material in a pattern defined by the selected portion.
C23C 16/04 - Revêtement de parties déterminées de la surface, p. ex. au moyen de masques
C23C 16/455 - Revêtement chimique par décomposition de composés gazeux, ne laissant pas de produits de réaction du matériau de la surface dans le revêtement, c.-à-d. procédés de dépôt chimique en phase vapeur [CVD] caractérisé par le procédé de revêtement caractérisé par le procédé utilisé pour introduire des gaz dans la chambre de réaction ou pour modifier les écoulements de gaz dans la chambre de réaction
C23C 16/48 - Revêtement chimique par décomposition de composés gazeux, ne laissant pas de produits de réaction du matériau de la surface dans le revêtement, c.-à-d. procédés de dépôt chimique en phase vapeur [CVD] caractérisé par le procédé de revêtement par irradiation, p. ex. par photolyse, radiolyse ou rayonnement corpusculaire
C30B 25/00 - Croissance des monocristaux par réaction chimique de gaz réactifs, p. ex. croissance par dépôt chimique en phase vapeur
H01L 21/02 - Fabrication ou traitement des dispositifs à semi-conducteurs ou de leurs parties constitutives
G03F 7/00 - Production par voie photomécanique, p. ex. photolithographique, de surfaces texturées, p. ex. surfaces impriméesMatériaux à cet effet, p. ex. comportant des photoréservesAppareillages spécialement adaptés à cet effet
39.
SENSOR AND METHOD FOR QUALIFICATION OF A TOPOGRAPHY OF A SURFACE OF A DIE FOR DIE BONDING
A system for die bonding comprising a sensor configured to determine a characteristic of a topography of a surface of one or more semiconductor dies, the sensor comprising: a radiation emission system configured to emit radiation having a substantially flat wavefront; and a radiation detector configured to detect at least some of the radiation after reflection by the one or more semiconductor dies to determine the characteristic of one or more semiconductor dies, wherein the system is configured to, based on output of the sensor, either: 1) accept and/or reject a semiconductor die for die bonding, or 2) reposition a semiconductor die and/or output the semiconductor die for cleaning prior to bonding.
G11C 29/00 - Vérification du fonctionnement correct des mémoiresTest de mémoires lors d'opération en mode de veille ou hors-ligne
G11C 29/56 - Équipements externes pour test de mémoires statiques, p. ex. équipement de test automatique [ATE]Interfaces correspondantes
G01N 21/95 - Recherche de la présence de criques, de défauts ou de souillures caractérisée par le matériau ou la forme de l'objet à analyser
H01L 21/66 - Test ou mesure durant la fabrication ou le traitement
H01L 23/00 - Détails de dispositifs à semi-conducteurs ou d'autres dispositifs à l'état solide
G01B 11/24 - Dispositions pour la mesure caractérisées par l'utilisation de techniques optiques pour mesurer des contours ou des courbes
G01B 11/30 - Dispositions pour la mesure caractérisées par l'utilisation de techniques optiques pour mesurer la rugosité ou l'irrégularité des surfaces
G11C 29/04 - Détection ou localisation d'éléments d'emmagasinage défectueux
40.
SYSTEM AND METHOD FOR STRESS RELEASE IN DIE BONDING
A system comprising: a targeted emission system configured to induce stress features in a semiconductor die; and a processor system configured to: obtain a pattern of stress features, the pattern of stress features configured to alter a distortion of the semiconductor die; and cause the targeted emission system to generate stress features in the semiconductor die based on the pattern of stress features, wherein the targeted emission system comprises a femtosecond laser system, wherein the semiconductor die is a semiconductor die bonded to a further semiconductor die and wherein the distortion is caused, at least in part, by stress induced by the bonding.
H01L 21/66 - Test ou mesure durant la fabrication ou le traitement
H01L 23/00 - Détails de dispositifs à semi-conducteurs ou d'autres dispositifs à l'état solide
B23K 26/00 - Travail par rayon laser, p. ex. soudage, découpage ou perçage
G03F 7/00 - Production par voie photomécanique, p. ex. photolithographique, de surfaces texturées, p. ex. surfaces impriméesMatériaux à cet effet, p. ex. comportant des photoréservesAppareillages spécialement adaptés à cet effet
G11C 5/04 - Supports pour éléments d'emmagasinageMontage ou fixation d'éléments d'emmagasinage sur de tels supports
G11C 29/00 - Vérification du fonctionnement correct des mémoiresTest de mémoires lors d'opération en mode de veille ou hors-ligne
G11C 29/02 - Détection ou localisation de circuits auxiliaires défectueux, p. ex. compteurs de rafraîchissement défectueux
G11C 29/56 - Équipements externes pour test de mémoires statiques, p. ex. équipement de test automatique [ATE]Interfaces correspondantes
H01L 21/683 - Appareils spécialement adaptés pour la manipulation des dispositifs à semi-conducteurs ou des dispositifs électriques à l'état solide pendant leur fabrication ou leur traitementAppareils spécialement adaptés pour la manipulation des plaquettes pendant la fabrication ou le traitement des dispositifs à semi-conducteurs ou des dispositifs électriques à l'état solide ou de leurs composants pour le maintien ou la préhension
H01L 23/544 - Marques appliquées sur le dispositif semi-conducteur, p. ex. marques de repérage, schémas de test
H01L 25/00 - Ensembles consistant en une pluralité de dispositifs à semi-conducteurs ou d'autres dispositifs à l'état solide
H01L 25/065 - Ensembles consistant en une pluralité de dispositifs à semi-conducteurs ou d'autres dispositifs à l'état solide les dispositifs étant tous d'un type prévu dans une seule des sous-classes , , , , ou , p. ex. ensembles de diodes redresseuses les dispositifs n'ayant pas de conteneurs séparés les dispositifs étant d'un type prévu dans le groupe
An apparatus and method of operating said apparatus, the apparatus comprising at least a first stage configured to support one or more donor dies and a second stage configured to support one or more target dies, the apparatus configured to measure a position of the one or more donor dies and configured to measure a position of the one or more target dies and to provide relative movement between at least one of the one or more donor dies and a corresponding one of the one or more target dies for die bonding by movement of the first stage and/or the second stage.
G11C 5/04 - Supports pour éléments d'emmagasinageMontage ou fixation d'éléments d'emmagasinage sur de tels supports
H01L 21/67 - Appareils spécialement adaptés pour la manipulation des dispositifs à semi-conducteurs ou des dispositifs électriques à l'état solide pendant leur fabrication ou leur traitementAppareils spécialement adaptés pour la manipulation des plaquettes pendant la fabrication ou le traitement des dispositifs à semi-conducteurs ou des dispositifs électriques à l'état solide ou de leurs composants
H01L 21/68 - Appareils spécialement adaptés pour la manipulation des dispositifs à semi-conducteurs ou des dispositifs électriques à l'état solide pendant leur fabrication ou leur traitementAppareils spécialement adaptés pour la manipulation des plaquettes pendant la fabrication ou le traitement des dispositifs à semi-conducteurs ou des dispositifs électriques à l'état solide ou de leurs composants pour le positionnement, l'orientation ou l'alignement
H01L 23/00 - Détails de dispositifs à semi-conducteurs ou d'autres dispositifs à l'état solide
42.
CONTROL OF LASER OF EUV SOURCE OF A LITHOGRAPHIC APPARATUS
Disclosed herein is a lithographic apparatus comprising: an EUV source that comprises a laser; and a control system; wherein: the control system is configured to obtain timing data of intended exposure processes; and the control system is configured to determine, in dependence on at least the timing data, control data for changing the instantaneous output power of the laser such that, during the intended exposure processes, an average output power of the laser is substantially maintained at a constant level, or changes at, or slower than, a pre-determined rate.
An improved technology for detecting discharge events in charged particle systems is discloses. An electron-optical apparatus for projecting a charged particle beam towards a sample comprises a stage configured to support a sample, a vacuum chamber configured to maintain a vacuum, an electron-optical device configured to generate a charged particle beam and direct the charged particle beam towards the sample, and an optical detection system configured to detect electromagnetic radiation within the apparatus, the optical detection system comprising a sensor and an optical waveguide having a first end positioned so as to detect electromagnetic radiation within the apparatus.
A method comprising: providing a semiconductor die on a carrier structure proximate to an acceptor location, wherein there is provided a flexible interposer layer between the semiconductor die and the carrier structure holding the die; applying radiation to, or near, the semiconductor die to cause transfer of the semiconductor die toward the acceptor location, wherein the transferred semiconductor die is bonded to the acceptor location by intermolecular bonding, wherein the radiation causes the flexible interposer layer to bend prior to contact of the semiconductor die with the acceptor location; and heating the semiconductor die in contact with the acceptor location to cause or improve electrical contact between the semiconductor die and the acceptor location.
G11C 5/04 - Supports pour éléments d'emmagasinageMontage ou fixation d'éléments d'emmagasinage sur de tels supports
H01L 21/683 - Appareils spécialement adaptés pour la manipulation des dispositifs à semi-conducteurs ou des dispositifs électriques à l'état solide pendant leur fabrication ou leur traitementAppareils spécialement adaptés pour la manipulation des plaquettes pendant la fabrication ou le traitement des dispositifs à semi-conducteurs ou des dispositifs électriques à l'état solide ou de leurs composants pour le maintien ou la préhension
H01L 23/00 - Détails de dispositifs à semi-conducteurs ou d'autres dispositifs à l'état solide
H01L 23/544 - Marques appliquées sur le dispositif semi-conducteur, p. ex. marques de repérage, schémas de test
H01L 25/00 - Ensembles consistant en une pluralité de dispositifs à semi-conducteurs ou d'autres dispositifs à l'état solide
45.
METHOD OF PELLICLE DETECTION, AND COMPUTER PROGRAM FOR PELLICLE MONITORING
A method of pellicle monitoring using an alignment sensor of a lithographic apparatus, wherein: the alignment sensor is configured to sense alignment using a patterning device alignment mark and a stage alignment mark; and the pellicle intersects a light path between the alignment sensor and the patterning device; wherein the method comprises: using the alignment sensor, measuring a first detection intensity; using the alignment sensor, measuring a second detection intensity, being the intensity of light reflected from the patterning device; and comparing the first and second detection intensities.
G03F 7/00 - Production par voie photomécanique, p. ex. photolithographique, de surfaces texturées, p. ex. surfaces impriméesMatériaux à cet effet, p. ex. comportant des photoréservesAppareillages spécialement adaptés à cet effet
46.
READOUT CIRCUIT DESIGN FOR CHARGED PARTICLE DETECTION APPLICATIONS
An electron counting detector includes a sensing element and a detection circuit configured to detect electron arrival events by comparing the relative frequencies or phases of two ring oscillators. A reference ring oscillator may be configured to output a reference signal to a comparator, and a detection ring oscillator may be configured to output a detection signal to the comparator. In the absence of an electron arrival event, the detection signal may remain correlated with the reference signal. When an electron arrives at the sensing element, charges form the sensing element are injected to an N-well of the detection ring oscillator, altering its oscillation frequency or phase. The altered frequency or phase of the detection oscillator with respect to the reference oscillator may be detected by the comparator as an electron arrival event.
In low-energy-electron diffraction (LEED), an electron diffraction pattern is detected, and an image may be formed, based on electrons reflected and diffracted from a sample surface. A diffraction pattern can be generated from the interaction of a relatively localized coherent electron beam incident on the sample surface (e.g., a selected area of the sample surface). Information from the diffraction pattern can be used to determine (or reconstruct) structures on the sample surface. Advantageously, selected area LEED (SA-LEED), or LEED in combination with ptychography (to generate a series of diffraction patterns which are each associated with a given particle beam position, where particle beams centered at neighboring positions are partially overlapping), may be used to determine semiconductor wafer surface structures through lensless imaging for defect inspection and/or other purposes.
G01N 23/20058 - Recherche ou analyse des matériaux par l'utilisation de rayonnement [ondes ou particules], p. ex. rayons X ou neutrons, non couvertes par les groupes , ou en utilisant la diffraction de la radiation par les matériaux, p. ex. pour rechercher la structure cristallineRecherche ou analyse des matériaux par l'utilisation de rayonnement [ondes ou particules], p. ex. rayons X ou neutrons, non couvertes par les groupes , ou en utilisant la diffusion de la radiation par les matériaux, p. ex. pour rechercher les matériaux non cristallinsRecherche ou analyse des matériaux par l'utilisation de rayonnement [ondes ou particules], p. ex. rayons X ou neutrons, non couvertes par les groupes , ou en utilisant la réflexion de la radiation par les matériaux en mesurant la diffraction des électrons, p. ex. la diffraction d’électrons lents [LEED] ou la diffraction d’électrons de haute énergie en incidence rasante [RHEED]
A component for mounting a lens in a charged-particle beam apparatus has a coefficient of thermal expansion (CTE) and a shape configured to cause the component to deflect by a predictable amount in a Z direction when subject to a predetermined non-zero temperature change such that a working distance of the lens remains substantially unchanged over the predetermined non-zero temperature range.
H01J 37/02 - Tubes à décharge pourvus de moyens permettant l'introduction d'objets ou d'un matériau à exposer à la décharge, p. ex. pour y subir un examen ou un traitement Détails
A method for determining a vertical position of a structure on a substrate with respect to a nominal vertical position is disclosed. The method comprises obtaining complex field data relating to scattered radiation from said structure, for a plurality of different wavelengths, determining variation in a phase parameter with wavelength from said complex field data; and determining said vertical position with respect to a nominal vertical position from the determined variation in phase with wavelength.
G03F 7/00 - Production par voie photomécanique, p. ex. photolithographique, de surfaces texturées, p. ex. surfaces impriméesMatériaux à cet effet, p. ex. comportant des photoréservesAppareillages spécialement adaptés à cet effet
G01B 11/22 - Dispositions pour la mesure caractérisées par l'utilisation de techniques optiques pour mesurer la profondeur
50.
ILLUMINATION ARRANGEMENT FOR A METROLOGY DEVICE AND ASSOCIATED METHOD
Disclosed is an illumination arrangement for providing at least one radiation beam for use as an illumination beam and/or reference beam in a metrology device. The illumination arrangement comprises at least one radiation beam modifier module operable to receive source illumination and output a modified radiation beam comprising a first beam component and a second beam component. Each radiation beam modifier module comprises at least one path length varying arrangement for controllably varying the optical path length of at least one of said first beam component and said second beam component, such that said first beam component and second beam component of said modified radiation beam comprise a respective different optical path length.
G01J 9/02 - Mesure du déphasage des rayons lumineuxRecherche du degré de cohérenceMesure de la longueur d'onde des rayons lumineux par des méthodes interférométriques
G02B 21/16 - Microscopes adaptés pour éclairage ultraviolet
G03F 7/00 - Production par voie photomécanique, p. ex. photolithographique, de surfaces texturées, p. ex. surfaces impriméesMatériaux à cet effet, p. ex. comportant des photoréservesAppareillages spécialement adaptés à cet effet
G03H 1/00 - Procédés ou appareils holographiques utilisant la lumière, les infrarouges ou les ultraviolets pour obtenir des hologrammes ou pour en obtenir une imageLeurs détails spécifiques
G03H 1/04 - Procédés ou appareils pour produire des hologrammes
G03H 1/06 - Procédés ou appareils pour produire des hologrammes utilisant de la lumière non cohérente
G03H 1/26 - Procédés ou appareils adaptés spécialement pour produire des hologrammes multiples ou pour en obtenir des images, p. ex. procédés pour l'holographie à plusieurs couleurs
51.
SYSTEMS AND METHODS FOR VOLTAGE CONTRAST DEFECT DETECTION
Systems and methods of providing a probe spot in multiple modes of operation of a charged-particle beam apparatus are disclosed. The method may comprise activating a charged-particle source to generate a primary charged-particle beam and selecting between a first mode and a second mode of operation of the charged-particle beam apparatus. In the flooding mode, the condenser lens may focus at least a first portion of the primary charged-particle beam passing through an aperture of the aperture plate to form a second portion of the primary charged-particle beam, and substantially all of the second portion is used to flood a surface of a sample. In the inspection mode, the condenser lens may focus a first portion of the primary charged-particle beam such that the aperture of the aperture plate blocks off peripheral charged-particles to form the second portion of the primary charged-particle beam used to inspect the sample surface.
G01N 23/2202 - Préparation d’échantillons à cet effet
G01N 1/44 - Traitement d'échantillons mettant en œuvre un rayonnement, p. ex. de la chaleur
G01N 23/2251 - Recherche ou analyse des matériaux par l'utilisation de rayonnement [ondes ou particules], p. ex. rayons X ou neutrons, non couvertes par les groupes , ou en mesurant l'émission secondaire de matériaux en utilisant des microsondes électroniques ou ioniques en utilisant des faisceaux d’électrons incidents, p. ex. la microscopie électronique à balayage [SEM]
H01J 37/02 - Tubes à décharge pourvus de moyens permettant l'introduction d'objets ou d'un matériau à exposer à la décharge, p. ex. pour y subir un examen ou un traitement Détails
H01J 37/244 - DétecteursComposants ou circuits associés
H01J 37/28 - Microscopes électroniques ou ioniquesTubes à diffraction d'électrons ou d'ions avec faisceaux de balayage
52.
CHARGED PARTICLE-OPTICAL APPARATUS AND METHOD OF PROCESSING A SAMPLE
A charged particle-optical apparatus comprises: a charged particle-optical device configured to direct a beam grid of beams of charged particles toward a region of a sample surface of a sample; a sample support configured to support the sample; and a controller configured to control the charged particle-optical apparatus to selectively apply one of a plurality of predetermined beam area patterns so as to process portions of respective beam areas of the region with respective beams in accordance with the applied beam area pattern; wherein the beam area patterns are associated with respective proportions of the beam areas being processed, and at least one of the beam area patterns comprises at least one elongate strip.
This application provides a color selection module, and a method, for filtering a selectable wavelength band. The color selection module comprises a light input; a light output; a filter; an actuatable mirror, and a return mirror. The light input receives an input light beam. The actuatable mirror receives the input light beam and reflects the input light beam towards a selectable position on the filter. The actuatable mirror is configured for selecting the position by actuation. The filter receives the reflected input light beam from the actuatable mirror on the selectable position and filters the selectable wavelength band from the reflected input light beam. The return mirror reflects the filtered wavelength band towards the actuatable mirror, and the actuatable mirror reflects the filtered selectable wavelength band towards the light output. The light output outputs light of the selectable wavelength band.
G03F 7/00 - Production par voie photomécanique, p. ex. photolithographique, de surfaces texturées, p. ex. surfaces impriméesMatériaux à cet effet, p. ex. comportant des photoréservesAppareillages spécialement adaptés à cet effet
G03F 9/00 - Mise en registre ou positionnement d'originaux, de masques, de trames, de feuilles photographiques, de surfaces texturées, p. ex. automatique
The present disclosure relates to a module for a charged particle-optical device configured to direct one or more primary beams of charged particles toward a sample location along a beam path, the module comprising: a wall for a vacuum chamber; and an actuatable charged particle-optical element configured to operate on charged particles directed along the beam path towards the sample location; wherein the actuatable charged particle-optical element is configured to be located outside the wall for the vacuum chamber and to be actuatable relative to the beam path in a direction across the primary beam and/or about an axis across the primary beam.
H01J 37/02 - Tubes à décharge pourvus de moyens permettant l'introduction d'objets ou d'un matériau à exposer à la décharge, p. ex. pour y subir un examen ou un traitement Détails
There is provided a method of metrology comprising: obtaining calibration data from at least one first target comprising at least a first cluster of sub-targets and a second cluster of sub-targets, wherein said calibration data comprises a set of measurements of said at least one first target in a first orientation and a set of measurements of said at least one first target in a second orientation; and calibrating a model based on said calibration data such that the calibrated model is operable to: predict, from measurement data of at least one second target comprising at least a first cluster of sub-targets, predicted measurement data as would be obtained from a second cluster of sub-targets; or relate measurement data of at least one second target comprising at least a first cluster of sub-targets to corrected measurement data of the at least one second target.
G03F 7/00 - Production par voie photomécanique, p. ex. photolithographique, de surfaces texturées, p. ex. surfaces impriméesMatériaux à cet effet, p. ex. comportant des photoréservesAppareillages spécialement adaptés à cet effet
56.
METHOD OF MONITORING PROCESS DRIFT IN A SEMICONDUCTOR MANUFACTURING PROCESS
Described is a method of measuring at least one exposure offset error relating to a lithographic apparatus. The method comprises obtaining a substrate comprising a coating of a latent resist; performing at least a main exposure step to expose metrology structures into said latent resist; measuring at least said metrology structures in the undeveloped latent resist to obtain metrology data; and determining said exposure offset error from said metrology data. The measuring step is performed subsequently to said main exposure step without removing said substrate from the lithographic apparatus.
G03F 9/00 - Mise en registre ou positionnement d'originaux, de masques, de trames, de feuilles photographiques, de surfaces texturées, p. ex. automatique
57.
MULTI-BEAM CHARGED-PARTICLE APPARATUS FOR UNIFORM PROBE CURRENT
A charged-particle beam apparatus comprises a first aperture array including a plurality of elongated apertures configured to generate a plurality of primary beamlets from a primary charged- particle beam and project the plurality of primary beamlets on a second aperture array. The second aperture array may include a plurality of apertures configured to generate a plurality of probing beams from the plurality of primary beamlets. A first aperture located at a corner of the plurality of elongated apertures of the first aperture array may be vertically aligned with a second aperture located at a corner of the plurality of apertures of the second aperture array, and a size of the first aperture in a first direction may be smaller than the size of the second aperture in the first direction.
A method of monitoring and evaluating a wafer fabrication process variation using a characteristic of extracted two-dimensional measurement data of a fabricated feature on a wafer is disclosed. Two-dimensional measurement data may be determined without using a physical measurement or a mathematical model and does not rely on any prior assumption on how a process variation should behave. A wafer map may be generated to identify a spatial distribution of an impact of fabrication process variation on a fabricated feature. The extracted two-dimensional measurement of fabricated features may be combined and engineered to obtain more insight of the fabrication process and lead to the possibility of classification based on contour quality, modeling of process windows, and other wafer fabrication modeling applications.
G03F 7/00 - Production par voie photomécanique, p. ex. photolithographique, de surfaces texturées, p. ex. surfaces impriméesMatériaux à cet effet, p. ex. comportant des photoréservesAppareillages spécialement adaptés à cet effet
59.
CONVERSION LAYERS TO BLOCK OUTGASSING IN HYDROGEN PLASMA
A component for EUV lithographic apparatus comprises: a) a component core made of a material comprising i) at least a first metal Me or a Me-alloy core and ii) a contaminant X which is susceptible to form volatile compounds that outgas within an EUV lithographic apparatus environment, and b) a capping layer provided on the top of the core and forming an outer surface arranged to be in contact with the environment within the lithographic apparatus, wherein the capping layer comprises an oxide YO of a second metal Y, and wherein the second metal Y is selected such as at working temperature to chemically react with the X' contaminant atoms which diffuse from the core to the capping layer and towards the outer surface of the components, forming thereby an alloy X'Y within the capping layer such that substantially all the diffusing X' contaminant is bound in the capping layer.
G03F 7/00 - Production par voie photomécanique, p. ex. photolithographique, de surfaces texturées, p. ex. surfaces impriméesMatériaux à cet effet, p. ex. comportant des photoréservesAppareillages spécialement adaptés à cet effet
60.
SYSTEMS AND METHODS FOR SIGNAL-BASED DEFECT CLASSIFICATION IN TRANSIENT INSPECTION
Systems, methods, and non-transitory computer readable mediums for signal-based defect classification in transient inspection include obtaining a first image of a sample; locating a location of interest using the first image; obtaining a plurality of second images of the sample, wherein each second image of the plurality of second images corresponds to a different point in time of the location of interest; tracking variation of grey level (GLV) for the location of interest based on the plurality of second images; plotting a relationship between the GLV and a time at which the GLV was captured based on the plurality of second images; and determining, using the plotting, whether a defect has occurred at the location of interest.
Improved methods and apparatus for correcting measurements on an inspection image for a wafer inspection system are provided. An improved method comprises acquiring a first measurement for a first dimension and a second measurement for a second dimension on the inspection image; acquiring reference data associated with the first dimension and the second dimension; estimating a first measurement error for the first measurement and a second measurement error for the second measurement based on the reference data; and correcting the first measurement based on the estimated first measurement error and the second measurement based on the estimated second measurement error.
G03F 7/00 - Production par voie photomécanique, p. ex. photolithographique, de surfaces texturées, p. ex. surfaces impriméesMatériaux à cet effet, p. ex. comportant des photoréservesAppareillages spécialement adaptés à cet effet
The present invention provides a vacuum exposure apparatus. The vacuum exposure apparatus comprises: a vacuum chamber; a stage disposed within the vacuum chamber and configured to support a sample; a high voltage power supply unit disposed within the vacuum chamber; a high voltage power source disposed exterior to the vacuum chamber; and exactly one high voltage cable extending between 5 the high voltage power supply unit to an exterior of the vacuum chamber. A first end of the high voltage cable is connected to the high voltage power supply unit. A second end of the high voltage cable is connected to the high voltage power source. The high voltage cable is configured to carry a higher voltage than is output by the high voltage power source.
H01J 37/02 - Tubes à décharge pourvus de moyens permettant l'introduction d'objets ou d'un matériau à exposer à la décharge, p. ex. pour y subir un examen ou un traitement Détails
H01J 37/24 - Circuits non adaptés à une application particulière du tube et non prévus ailleurs
H01J 5/50 - Moyens faisant partie du tube ou de la lampe et prévus pour assurer les connexions électriques
A charged particle-optical module for generating a plurality of sub-beams 211-213 from a source beam 202 of electrons, the module for use in an charged particle-optical device for projecting a plurality of sub-beams 211-213 toward a sample. The charged particle module comprises: an electron source 201 comprising an emitter 63 configured to emit a source beam 202 along a divergent path; a beam limiter 236 defining an array of apertures 232 and positioned in the divergent path to form a grid of sub-beams from the source beam; a condenser lens array 231 configured to operate on the sub-beams; and a macro-corrector system 60 configured to act on the sub-beams. The macro-corrector system is at least partly comprised between the beam limiter and the condenser lens array.
TRUMPF LASERSYSTEMS FOR SEMICONDUCTOR MANUFACTURING SE (Allemagne)
Inventeur(s)
Dilissen, Ruben, Hendrik, C
Hettkamp, Philipp
Alvarez Alonso, Diego, Alejandro
Wiesweg, Florian
Abrégé
An optical amplifier (200) comprising a flow passageway for a gas of the optical amplifier (200), a first swirl insert (150) in the flow passageway arranged to impart a desired swirling flow pattern to the gas, and a cyclonic particle trap (154) either or both around or downstream of the swirl insert (150) for collecting particle contamination from a radially outer portion of the swirling gas. The swirl insert comprises vanes (134) arranged to impart a cyclonic or helical flow to the gas, whereby particle contamination in the gas tends to move into or towards the radially outer portion of the swirling gas.
B01D 45/16 - Séparation de particules dispersées dans des gaz ou des vapeurs par gravité, inertie ou force centrifuge en utilisant la force centrifuge produite par le mouvement hélicoïdal du courant gazeux
A detection system is configured for a target material reservoir. The detection system includes: a feedthrough housing associated with a wall of the target material reservoir, the feedthrough housing defining a seal surface; an electrically-conductive member extending through the feedthrough housing; and a compressible element that is electrically insulating. The electrically-conductive member is inside the compressible element. The compressible element contacts the feedthrough housing at the seal surface of the feedthrough housing. The interface between the feedthrough housing seal surface and a surface of the compressible element forms a hermetic seal when the compressible element is compressed.
H05G 2/00 - Appareils ou procédés spécialement adaptés à la production de rayons X, n'utilisant pas de tubes à rayons X, p. ex. utilisant la génération d'un plasma
66.
LITHOGRAPHIC APPARATUS AND DEVICE MANUFACTURING METHOD WITH PREVENTING CONTAMINANT PARTICLES FROM BEING DEPOSITED ON A SENSITIVE COMPONENT, SUCH AS A PATTERNING SURFACE OF A PATTERNING DEVICE
Disclosed is a lithographic apparatus including: an illumination system for providing a beam of EUV radiation along a beam path; a holder for a patterning device configured to impart a pattern to the beam of radiation, the patterning device comprising a patterning surface with a pattern thereon; and an electron beam source configured to emit electrons toward the patterning surface and/or a part of the beam path adjacent the patterning surface.
An assembly comprising a vessel configured to receive a radiation beam. The assembly comprises an internal structure forming part of the vessel or enclosed within the vessel, and a temperature control system configured to control a temperature of the internal structure to be in a range of 77 K to 140 K.
A charged particle-optical arrangement for a charged particle beam apparatus configured to operate on at least one beam of charged particles, the electron-optical arrangement comprising: a first plate which defines at least one first aperture for passage of the at least one beam therethrough; and a second plate which defines at least one second aperture for passage of the at least one beam therethrough; and an actuator arrangement configured to apply a force to the first plate.
A method of inferring second metrology data relating to patterned substrate on which patterns have been exposed and on which processing has been performed, from first metrology data measured on the patterned substrate prior to performance of the processing. The method includes obtaining a model including a first model component. The first model component includes a machine learning model component having been trained to map the first metrology data to the second metrology data, the first model component further including a physics-based input channel for receiving physics-based input data. Second metrology data is inferred from the first metrology data using the first model component as biased by the physics-based input data on the physics-based input channel.
G03F 7/00 - Production par voie photomécanique, p. ex. photolithographique, de surfaces texturées, p. ex. surfaces impriméesMatériaux à cet effet, p. ex. comportant des photoréservesAppareillages spécialement adaptés à cet effet
A method is provided for measuring a characteristic feature or property of a sub-target (e.g., a component of an integrated circuit, IC, fabricated using a lithography production process). The sub-target is located on a target, which includes one or more other sub-targets. The method involves arranging each of the sub-targets in a plurality of disjunct positions within an illumination spot of electromagnetic radiation and measuring the intensity of electromagnetic radiation diffracted from each of the sub-targets at those respective positions. Corrected intensities of electromagnetic radiation diffracted by the corresponding sub-target are determined.
Described herein is a method and system for generating a mask pattern. A set of primitive elements of a target pattern is identified. The set of primitive elements are encoded in a feature vector space to generate a set of encoded primitive elements and aggregated to generate an encoded aggregation that represents the target pattern. The encoded aggregation is input to a mask prediction model, which generates a mask image that is representative of a mask pattern for the target pattern.
G03F 1/36 - Masques à correction d'effets de proximitéLeur préparation, p. ex. procédés de conception à correction d'effets de proximité [OPC optical proximity correction]
G03F 7/00 - Production par voie photomécanique, p. ex. photolithographique, de surfaces texturées, p. ex. surfaces impriméesMatériaux à cet effet, p. ex. comportant des photoréservesAppareillages spécialement adaptés à cet effet
Disclosed is an apparatus for and method of adjusting spectral properties of a laser curtain including a focal position of a laser curtain created by a tunable-wavelength laser with respect to a position of a mass of target material in which the wavelength of the laser radiation output by the tunable-wavelength laser is changed to cause a chromatic shift in the spectral property.
H05G 2/00 - Appareils ou procédés spécialement adaptés à la production de rayons X, n'utilisant pas de tubes à rayons X, p. ex. utilisant la génération d'un plasma
73.
METHOD OF SCANNING A SAMPLE WITH NON-CIRCULAR BEAM SPOTS
Systems, methods, and non-transitory computer readable mediums for scanning a sample with non-circular beam spots may include generating an elongated electron beam; orientating the elongated electron beam such that a length of the elongated electron beam is parallel to an edge of a pattern on the sample; scanning the pattern with the elongated electron beam; detecting electrons emitted from the sample during the scanning; and determining a characteristic of the pattern based on the detected electrons.
H01J 37/147 - Dispositions pour diriger ou dévier la décharge le long d'une trajectoire déterminée
H01J 37/28 - Microscopes électroniques ou ioniquesTubes à diffraction d'électrons ou d'ions avec faisceaux de balayage
H01J 37/04 - Dispositions des électrodes et organes associés en vue de produire ou de commander la décharge, p. ex. dispositif électronoptique, dispositif ionoptique
A substrate warpage determination system comprises at least three first supporting devices and at least three second supporting devices, forming first and second substrate support areas configured to carry a substrate, an actuator configured to move the at least three second supporting devices in a vertical direction, and a controller to drive the actuator. The controller is configured to determine a force exerted by the actuator, compare the determined force exerted by the actuator at the position in a vertical direction of the second substrate support area relative to the first substrate support area to a predetermined force at a predetermined position in the vertical direction of the second substrate support area relative to the first substrate support area, and determine a warpage of the substrate from the comparison.
G03F 7/00 - Production par voie photomécanique, p. ex. photolithographique, de surfaces texturées, p. ex. surfaces impriméesMatériaux à cet effet, p. ex. comportant des photoréservesAppareillages spécialement adaptés à cet effet
75.
METHOD AND SYSTEM FOR REDUCING CHARGING ARTIFACT IN INSPECTION IMAGE
Systems and methods for reducing charging artifacts in an inspection image include obtaining a set of inspection images, in which each of the set of inspection images includes a charging artifact; and training a machine learning model using the set of inspection images as input, in which the machine learning model outputs a set of decoupled features of the set of inspection images.
G06V 10/774 - Génération d'ensembles de motifs de formationTraitement des caractéristiques d’images ou de vidéos dans les espaces de caractéristiquesDispositions pour la reconnaissance ou la compréhension d’images ou de vidéos utilisant la reconnaissance de formes ou l’apprentissage automatique utilisant l’intégration et la réduction de données, p. ex. analyse en composantes principales [PCA] ou analyse en composantes indépendantes [ ICA] ou cartes auto-organisatrices [SOM]Séparation aveugle de source méthodes de Bootstrap, p. ex. "bagging” ou “boosting”
76.
MEASURING CONTRAST AND CRITICAL DIMENSION USING AN ALIGNMENT SENSOR
A method can include directing radiation toward at least two targets using an optical scanning system so as to generate first and second portions of scattered radiation. A first target can include a plurality of first grating line structures including features having a first bias value. A second target can include a plurality of second grating line structures including features having a second bias value. The method can include detecting the first and second portions of scattered radiation, generating a first measurement signal indicative of a first target position based on the first bias features, and generating a second measurement signal indicative of a second target position based on the second bias features. The method can include analyzing an effect of the first and second bias values on the first and second positions to determine at least one property of the set of targets.
G03F 7/00 - Production par voie photomécanique, p. ex. photolithographique, de surfaces texturées, p. ex. surfaces impriméesMatériaux à cet effet, p. ex. comportant des photoréservesAppareillages spécialement adaptés à cet effet
G01B 11/27 - Dispositions pour la mesure caractérisées par l'utilisation de techniques optiques pour mesurer des angles ou des cônesDispositions pour la mesure caractérisées par l'utilisation de techniques optiques pour tester l'alignement des axes pour tester l'alignement des axes
G03F 9/00 - Mise en registre ou positionnement d'originaux, de masques, de trames, de feuilles photographiques, de surfaces texturées, p. ex. automatique
77.
DETECTION OF YIELD-CRITICAL DEFECTS USING THE MEDIAL AXIS OF 3D-STACKED CHARGED-PARTICLE BEAM INSPECTION IMAGES
An apparatus for detecting defects in a sample includes a memory storing a set of instructions and at least one processor configured to execute the set of instructions to cause the apparatus to perform: acquiring a plurality of images, wherein each image is a location to be examined; segmenting each of the plurality of images; stacking the plurality of segmented images into a three-dimensional (3D) volume; calculating a medial axis of the 3D volume; generating a medial axis skeleton of the 3D volume based on the calculated medial axis; and evaluating the medial axis skeleton to determine whether there are any detected defects in the sample.
A method for performing a distributed wafer print check includes: inspecting a zone of a full field of a first wafer by a first inspection tool; determining defect locations in the zone of the first wafer by the first inspection tool; providing the defect locations of the zone of the first wafer to a second inspection tool; determining whether the defect locations of the zone of the first wafer repeat in a zone of a second wafer by the second inspection tool, wherein the zone of the first wafer is in a same location as the zone of the second wafer and the second inspection tool inspects the zone of the second wafer while the first inspection tool inspects another zone of the first wafer.
Samples and methods for determining a beam spot size include scanning a pattern on the sample with a charged-particle beam to generate an image. The pattern may include at least one inclined side edge and a top surface. The at least one inclined side edge may have an inclination angle that is controlled during manufacture of the sample to be between about 40-80 degrees. The beam spot size may be determined based on an imaging profile of the at least one inclined side edge derived based on the image.
A fluid handling structure configured to at least partly confine an immersion liquid to an immersion space between a final element of a projection system and a substrate, comprising: a gas channel configured to supply a gas flow towards the substrate via a gas channel opening; and a chamber configured to define a control volume fluidically connected to the gas channel, the chamber being actuatable to vary a flow rate of the gas via the gas channel opening by varying a size of the control volume.
Described herein is a method and system for optimizing a source of a lithographic apparatus using a perturbed mask pattern. A mask pattern corresponding to a target pattern is obtained, and a contour of the mask pattern is extracted. A set of points are assigned along a contour and a random displacement of the contour is determined at each point. The mask pattern is perturbed by random displacements at each point to generate a perturbed mask pattern. The source is optimized by performing a source optimization, source mask optimization, or other such process using the perturbed mask pattern.
G03F 7/00 - Production par voie photomécanique, p. ex. photolithographique, de surfaces texturées, p. ex. surfaces impriméesMatériaux à cet effet, p. ex. comportant des photoréservesAppareillages spécialement adaptés à cet effet
Metrology apparatus comprises: an illumination module; and an interferometer module. The interferometer module comprises: a beam splitter for forming measurement and reference radiation; first optics for: projecting the measurement radiation onto the object; and collecting measurement radiation reflected from the object; and a detector arranged to receive: the reference radiation and; the reflected measurement radiation and to measure an interference pattern therebetween. The illumination module is configured to illuminate a plurality of distinct portions of the first optics pupil plane, each comprising a plurality of regions having different polarization states in the beam spot region. The detector is disposed such that: portions of the reference radiation and the measurement radiation that originate from the same distinct portion of radiation in the pupil plane spatially overlap; and portions of the reference radiation and the measurement radiation that originate from different distinct portions of radiation in the pupil plane are spatially distinct.
A laser powered plasma, LPP, based EUV generation system is configured to generate EUV light by irradiating droplets of a target material with at least one laser beam. The system comprises a metrology module configured to determine a position of a droplet of the target material by comparing a portion of a forward beam with a portion of a reverse beam that is reflected off from the target material. The metrology module comprises a polarization state dependent beam pickup arranged to split a portion from the forward beam and the reverse beam depending on a polarization state, and a polarization state adjuster arranged downstream of a beam path when compared to the polarization state dependent beam pickup, arranged to change a polarization state of at least one of the forward beam and the reverse beam such that the polarization states of the forward and reverse beams incident at the polarization state dependent beam pickup differs.
H05G 2/00 - Appareils ou procédés spécialement adaptés à la production de rayons X, n'utilisant pas de tubes à rayons X, p. ex. utilisant la génération d'un plasma
84.
RADIATION SOURCE ASSEMBLY FOR GENERATING BROADBAND RADIATION
Radiation source assembly and method for generating broadband radiation. The radiation source assembly comprises a solid core photonic crystal fiber, SC-PCF, having an input end and an output end, wherein the input end is configured to receive pulses of radiation from a pump source; a hollow core photonic crystal fiber, HC-PCF, that is filled with a gaseous 5 working medium and arranged to receive pulses of radiation at an input end of the HC-PCF that are output from the output end of the SC-PCF; and wherein the SC-PCF is configured to broaden a spectrum of the pulses of radiation by providing nonlinearity at normal group- velocity dispersion, and the HC-PCF is configured to generate broadband radiation by nonlinear interaction of the pulses of radiation with the gaseous working medium, and output 0 the broadband radiation at an output end of the HC-PCF.
A signal processing method comprising: receiving, from a detector, e.g. in a charged particle assessment apparatus, having a plurality of detector elements, a detection signal comprising a sequence of N ascending sample values for each detector element and for each sampling period, where N is an integer greater than 1; and outputting for each detector element and for each sampling period an output value; wherein outputting comprises: selecting, for at least one detector element and at least one sampling period, the Nth sample value in the sequence of ascending sample values of that sample period as the output value; and determining, for at least one detector element and at least one sampling period, the output value on the basis of at least an Mth sample value in the sequence of ascending sample values of that sample period, where M is an integer less than N.
G01N 23/2251 - Recherche ou analyse des matériaux par l'utilisation de rayonnement [ondes ou particules], p. ex. rayons X ou neutrons, non couvertes par les groupes , ou en mesurant l'émission secondaire de matériaux en utilisant des microsondes électroniques ou ioniques en utilisant des faisceaux d’électrons incidents, p. ex. la microscopie électronique à balayage [SEM]
H01J 37/28 - Microscopes électroniques ou ioniquesTubes à diffraction d'électrons ou d'ions avec faisceaux de balayage
G01T 1/17 - Dispositions de circuits non adaptés à un type particulier de détecteur
A method of joining a support member to a substrate support, the method comprising: inserting the support member into a recess in the substrate support with a bonding material between facing surfaces of the support member and the substrate support; and applying a bonding temperature and a bonding pressure to the bonding material, wherein the bonding material comprises a first material and a second material, wherein the first material comprises a powder of an oxalate, and the second material comprises nanoparticles.
G03F 7/00 - Production par voie photomécanique, p. ex. photolithographique, de surfaces texturées, p. ex. surfaces impriméesMatériaux à cet effet, p. ex. comportant des photoréservesAppareillages spécialement adaptés à cet effet
H01L 21/687 - Appareils spécialement adaptés pour la manipulation des dispositifs à semi-conducteurs ou des dispositifs électriques à l'état solide pendant leur fabrication ou leur traitementAppareils spécialement adaptés pour la manipulation des plaquettes pendant la fabrication ou le traitement des dispositifs à semi-conducteurs ou des dispositifs électriques à l'état solide ou de leurs composants pour le maintien ou la préhension en utilisant des moyens mécaniques, p. ex. mandrins, pièces de serrage, pinces
87.
LITHOGRAPHIC PATTERN REPRESENTATION WITH CURVILINEAR ELEMENTS
Methods, systems, and computer software are disclosed for determining a mask pattern for use with a lithographic process. One method includes assigning locations of two-dimensional elements based on a target pattern, associating the two-dimensional elements based on association criteria to form a cluster that represents a mask feature, and adjusting the two-dimensional elements of the cluster to vary the mask feature.
G03F 1/36 - Masques à correction d'effets de proximitéLeur préparation, p. ex. procédés de conception à correction d'effets de proximité [OPC optical proximity correction]
G03F 1/70 - Adaptation du tracé ou de la conception de base du masque aux exigences du procédé lithographique, p. ex. correction par deuxième itération d'un motif de masque pour l'imagerie
G03F 7/00 - Production par voie photomécanique, p. ex. photolithographique, de surfaces texturées, p. ex. surfaces impriméesMatériaux à cet effet, p. ex. comportant des photoréservesAppareillages spécialement adaptés à cet effet
88.
METHOD FOR DETERMINING A SPATIAL DISTRIBUTION OF A PARAMETER OF INTEREST OVER AT LEAST ONE SUBSTRATE OR PORTION THEREOF
A method for determining a spatial distribution of a parameter of interest over at least one substrate or portion thereof, the at least one substrate having been subject to a semiconductor manufacturing process, the method including: obtaining a statistical description describing an expected fingerprint component of the spatial distribution and a noise component describing an expected level of measurement noise associated with the parameter of interest; obtaining metrology data related to the parameter of interest; and inferring via Bayesian inference the spatial distribution of the parameter of interest over the at least one substrate or portion thereof, using the statistical description as a prior and the metrology data as an observation.
A method of retrieving data from at least one data store which stores a plurality of data sets each having a tabular data structure, the method including: receiving a query which includes semantic information and requests data associated with the semantic information from the data store(s); determining from the semantic information whether the query can be serviced using data selected from and/or derived from one or more candidate data set of the plurality of data sets; if multiple candidate data sets can service the query, using a cost function to determine at least one candidate data set of the multiple candidate data sets to service the query, and determine a portion of each of the at least one candidate data set to service the query; and returning a response to the query, the response including data obtained using the portion of each of the at least one candidate data set.
Disclosed is a method of correcting a measured spectrum for the effects of a source spectrum resulting from an illumination source. The method comprises obtaining a measured spectrum in terms of a measurement parameter, the measured spectrum being obtained from captured diffracted radiation from a periodic structure following illumination of said periodic structure using source radiation from said illumination source, the periodic structure being the spectrometer grating and an object being measured; determining an estimate of the source spectrum from the measured spectrum; and correcting the measured spectrum using the estimate of the source spectrum.
G03F 7/00 - Production par voie photomécanique, p. ex. photolithographique, de surfaces texturées, p. ex. surfaces impriméesMatériaux à cet effet, p. ex. comportant des photoréservesAppareillages spécialement adaptés à cet effet
91.
VACUUM CHAMBER SYSTEM INCLUDING TEMPERATURE CONDITIONING PLATE
A vacuum chamber system comprises a supporting structure configured to support an object to be thermally stabilized, a plate, having a first surface facing the object, positioned such that the first surface is located within a predetermined distance from the object when the object is placed on the supporting structure, the plate being thermally coupled to a heat conduction source, and a chamber enclosing the supporting structure and the plate.
A target apparatus for an extreme ultraviolet (EUV) light source includes a target generator, a sensor module, and a target generator controller. The target generator includes a reservoir configured to contain target material that produces EUV light in a plasma state and a nozzle structure in fluid communication with the reservoir. The target generator defines an opening in the nozzle structure through which the target material received from the reservoir is released. The sensor module is configured to: detect an aspect relating to target material released from the opening as the target material travels along a trajectory toward a target space, and produce a one-dimensional signal from the detected aspect. The target generator controller is in communication with the sensor module and the target generator, and is configured to modify characteristics of the target material based on an analysis of the one-dimensional signal.
H05G 2/00 - Appareils ou procédés spécialement adaptés à la production de rayons X, n'utilisant pas de tubes à rayons X, p. ex. utilisant la génération d'un plasma
A metrology tool for inspection of a structure on an object comprises: projection optics; detection optics; a detector array; and a controller. The projection optics is arranged to project radiation onto the structure and the detection optics is arranged to receive radiation scattered by the structure. The detector array comprises a plurality of detector elements. The controller is operable to: control the detector array so as to determine at least one image; and determine one or more parameters of interest in dependence on the at least one determined image. The controller is configurable such that each pixel of at least one determined image is indicative of a total dose of radiation received by one of detector elements in a plurality of discrete time intervals during a measurement time interval, the pixel value being read out from the corresponding detector element at the end of the measurement time interval.
Systems and methods of increasing gas flow across a substrate in a charged-particle beam apparatus are disclosed. The apparatus may include a vacuum chamber comprising a first gas inlet fluidly connected with a charged-particle beam optics column and configured to direct a first gas flow downstream in the charged-particle beam optics column toward a substrate at a first flow velocity and a second gas inlet configured to direct a second gas flow toward the substrate at a second flow velocity. The first and the second gas flows merge to form a lateral gas flow across a top surface of the substrate, the lateral gas flow having a flow velocity higher than the first flow velocity or the second flow velocity.
A radiation sensor for detecting EUV radiation, the radiation sensor comprising: a radiation receiving side for receiving radiation to be detected; a substrate layer comprising a photodiode at the radiation receiving side; a cathode configured to collect charge from the photodiode; and a side shield configured to shield the photodiode from radiation entering the substrate layer from an opposite side of the side shield, wherein the side shield extends into the substrate layer from the radiation receiving side.
G03F 7/00 - Production par voie photomécanique, p. ex. photolithographique, de surfaces texturées, p. ex. surfaces impriméesMatériaux à cet effet, p. ex. comportant des photoréservesAppareillages spécialement adaptés à cet effet
G01T 1/24 - Mesure de l'intensité de radiation avec des détecteurs à semi-conducteurs
96.
IMAGE ANALYSIS BASED ON ADAPTIVE WEIGHTING OF TEMPLATE CONTOURS
A method of characterizing an image. The method includes accessing a template contour that corresponds to a set of contour points extracted from the image. The method includes comparing the template contour and the extracted contour points based on a plurality of distances between locations on the template contour and the extracted contour points. The plurality of distances is weighted based on the locations on the template contour and overlap of the locations on the template contour with a blocking structure in the image. The method includes determining, based on the comparison, a matching geometry and/or a matching position of the template contour with the extracted contour points from the image.
G06V 10/75 - Organisation de procédés de l’appariement, p. ex. comparaisons simultanées ou séquentielles des caractéristiques d’images ou de vidéosApproches-approximative-fine, p. ex. approches multi-échellesAppariement de motifs d’image ou de vidéoMesures de proximité dans les espaces de caractéristiques utilisant l’analyse de contexteSélection des dictionnaires
An apparatus for cleaning a surface of a component within an extreme ultraviolet (EUV) lithography vessel, the apparatus includes: a robotic arm comprising a movable portion and arranged relative to the lithography vessel such that its movable portion has access to the component surface; and a surface wave plasma (SWP) generator at the movable portion of the robotic arm, the SWP generator configured to generate a surface wave plasma in a region proximate to the movable portion, and, when the movable portion is within a cleaning distance from the component surface, the generated surface wave plasma removes debris from the component surface during cleaning mode.
A reticle load lock having a valve with a variable size orifice, or servo valving, is described. Servo valving can continually adjust the size of the orifice such that the reticle load lock can pump or vent at an optimal level. The servo valving pressure profile follows an optimized pressure rate to protect the structural integrity of the pellicle. The optimized servo valving curves minimize the evacuation and vent times without exceeding the pressure rate (dP/dt) limits. By following the optimized pressure rate curve, servo valving significantly reduces the time to pump down and vent and prevents breakage of the pellicle.
The disclosure relates to electron-optical systems and associated methods. In one arrangement, the system comprises an electron beam element comprising a substrate in which at least one aperture is defined for passage of a respective electron beam. The aperture comprises an entrance opening and an exit opening. A cross-section of the entrance opening has an entrance shape that is distorted relative to a target shape. A cross-section of the exit opening has an exit shape that is also distorted relative to the target shape. When scaled to have the same cross-sectional area as each other, the entrance and exit shapes comprise deviations relative to the target shape that are opposite in sign along at least one direction perpendicular to an aperture axis.
H01J 37/244 - DétecteursComposants ou circuits associés
H01J 37/28 - Microscopes électroniques ou ioniquesTubes à diffraction d'électrons ou d'ions avec faisceaux de balayage
H01J 37/317 - Tubes à faisceau électronique ou ionique destinés aux traitements localisés d'objets pour modifier les propriétés des objets ou pour leur appliquer des revêtements en couche mince, p. ex. implantation d'ions
Disclosed is a method of determining compact lens model dependency data. The method comprises obtaining input lens model dependency data describing relationships between aberration data and a plurality of manipulators for manipulating elements of a projection system of a lithographic apparatus, said aberration data being described in terms of a first basis; determining correctable slit shapes relating to an exposure slit of the lithographic apparatus from the input lens model dependency data; determining at least one wavefront shape for each said correctable slit shape to determine a candidate matrix; determining a plurality of correctable components by ranking said candidate matrix in terms of correction potential and/or manipulator range usage, each said correctable component defining a basis function of a second basis, said second basis being different to said first basis; and determining compact lens model dependency data in terms of said second basis.
