- All sections
- H - Electricity
- H10B - Electronic memory devices
- H10B 41/35 - Electrically erasable-and-programmable ROM [EEPROM] devices comprising floating gates characterised by the memory core region with a cell select transistor, e.g. NAND
Patent holdings for IPC class H10B 41/35
Total number of patents in this class: 1133
10-year publication summary
0
|
0
|
0
|
0
|
13
|
78
|
250
|
253
|
389
|
152
|
2016 | 2017 | 2018 | 2019 | 2020 | 2021 | 2022 | 2023 | 2024 | 2025 |
Principal owners for this class
Owner |
All patents
|
This class
|
---|---|---|
Samsung Electronics Co., Ltd. | 144426 |
228 |
Micron Technology, Inc. | 26214 |
177 |
Kioxia Corporation | 10282 |
123 |
Yangtze Memory Technologies Co., Ltd. | 2587 |
121 |
Sandisk Technologies Inc. | 4804 |
90 |
SK Hynix Inc. | 11253 |
73 |
Taiwan Semiconductor Manufacturing Company, Ltd. | 42222 |
50 |
Lodestar Licensing Group LLC | 993 |
50 |
Macronix International Co., Ltd. | 2565 |
23 |
Applied Materials, Inc. | 18433 |
21 |
Semiconductor Energy Laboratory Co., Ltd. | 11371 |
16 |
STMicroelectronics (Rousset) SAS | 946 |
14 |
JPMorgan Chase Bank, N.A., AS The Agent | 2441 |
14 |
Sandisk Technologies LLC | 1431 |
10 |
eMemory Technology Inc. | 387 |
10 |
Zeno Semiconductor, Inc. | 250 |
8 |
Intel NDTM US LLC | 420 |
8 |
United Microelectronics Corp. | 4232 |
6 |
Monolithic 3D Inc. | 308 |
6 |
Western Digital Technologies, Inc. | 1773 |
5 |
Other owners | 80 |