SK Tri Chem Co., Ltd.

République de Corée

 
Quantité totale PI 21
Rang # Quantité totale PI 71 225
Note d'activité PI 2,5/5.0    39
Rang # Activité PI 19 356

Brevets

Marques

3 0
0 0
18 0
0
 
Dernier brevet 2025 - Precursor for forming lanthanide...
Premier brevet 2022 - Precursor for forming low dielec...

Derniers inventions, produits et services

2024 Invention Precursor for forming scandium- or yttrium-containing thin film, method for forming scandium- or ...
Invention Precursor for forming yttrium- or scandium-containing thin film, method for forming yttrium-or sc...
Invention Precursor for forming lanthanide metal-containing thin film, method for forming lanthanide metal-...
Invention Precursor for forming high-purity group 4 transition metal-containing thin film and manufacturing...
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Invention Precursor for forming metal-silicon containing thin film, thin film deposition method using same,...
Invention Precursor for forming low-k thin film and method for forming low-k silicon-containing thin film u...
Invention Precursor for forming low dielectric constant silicon-containing thin film and method for forming...
2023 Invention Precursor for forming metal-containing thin film, method for forming thin film using same, and de...
Invention Precursor for forming silicon-containing thin film, method for forming silicon-containing thin fi...
Invention Compound for inhibiting growth of thin film and thin film forming method using same. The present ...
Invention Precursor for forming yttrium- or scandium-containing thin film, method for forming yttrium- or s...
Invention High-purity molybdenum dichloride dioxide and preparation method therefor. The present invention ...
Invention Novel amidinate ligand, and thin film formation precursor comprising ligand. The present inventio...
Invention Molybdenum oxyhalide and preparation method thereof. 2422), and a high-purity molybdenum oxyhalid...
2022 Invention Precursor for forming low dielectric constant silicon-containing thin film, method for forming lo...