|
2023
|
Invention
|
Production of silicon carbide epitaxial wafers. A method for producing silicon carbide, SiC, epit... |
|
2022
|
Invention
|
System and method of producing monocrystalline layers on a substrate. A system (100) for producin... |
|
|
Invention
|
Method of growing high-quality single crystal silicon carbide.
A method is disclosed of growing ... |
|
|
Invention
|
Simultaneous growth of two silicon carbide layers.
Provided is a system (100) for simultaneously... |
|
|
Invention
|
System and method of producing monocrystalline layers on a substrate.
A system (100) for produci... |
|
|
Invention
|
Simultaneous growth of two silicon carbide layers. Provided is a system (100) for simultaneously ... |
|
|
Invention
|
Method of growing high-quality single crystal silicon carbide. A method is disclosed of growing a... |
|
2006
|
Invention
|
Method of producing silicon carbide epitaxial layer. A method of producing an epitaxial layer on ... |
