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2025
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Invention
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Metal contacts to group iv semiconductors by inserting interfacial atomic monolayers.
Techniques... |
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Invention
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Tensile strained semiconductor photon emission and detection devices and integrated photonics sys... |
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2024
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Invention
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Nanowire transistor with source and drain induced by electrical contacts with negative schottky b... |
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Invention
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Strained semiconductor using elastic edge relaxation of a stressor combined with buried insulatin... |
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2023
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Invention
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Metal contacts to group iv semiconductors by inserting interfacial atomic monolayers. Techniques ... |
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Invention
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Soi wafers and devices with buried stressors. A semiconductor structure includes a layer arrangem... |
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2022
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Invention
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Multi-finger rf nfet having buried stressor layer and isolation trenches between gates. An RF MOS... |
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Invention
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Multi-finger rf nfet having buried stressor layer and isolation trenches between gates.
An RF MO... |
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Invention
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Relating to soi wafers and devices with buried stressors. A semiconductor structure includes a la... |
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2020
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Invention
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Soi wafers and devices with buried stressor. A semiconductor structure includes a layer arrangeme... |
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2018
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Invention
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Strained semiconductor-on-insulator by deformation of buried insulator induced by buried stressor... |
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2017
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Invention
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Soi wafers and devices with buried stressor.
A semiconductor structure includes a layer arrangem... |
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2013
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Invention
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Strain-enhanced silicon photon-to-electron conversion devices. Improved silicon solar cells, sili... |
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2010
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Invention
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Method for making semiconductor insulated-gate field-effect transistor having multilayer deposite... |
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2009
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Invention
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Strained-enhanced silicon photon-to-electron conversion devices. Improved silicon solar cells, si... |
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2008
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Invention
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Channel strain induced by strained metal in fet source or drain. A process for forming a FET (e.g... |
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2000
|
Invention
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Electrostatically operated tunneling transistor. A transistor operated by changing the electrosta... |
