eMemory Technology Inc.

Taïwan, Province de Chine


Commandez votre montre hebdomadaire eMemory Technology Inc.
Quantité totale PI 411
Rang # Quantité totale PI 3 326
Note d'activité PI 3,1/5.0    179
Rang # Activité PI 3 883
Symbole boursier 3529 (tpex)
ISIN TW0003529004
Capitalisation 234.40001B  (TWD)
Industrie Semiconductor Memory
Secteur Technology
Classe Nice dominante Services scientifiques, technolo...

Brevets

Marques

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Dernier brevet 2026 - Power-on detection circuit
Premier brevet 1998 - Fabricating method of an ultra-f...
Dernière marque 2016 - NEOPUF
Première marque 2002 - NEOBIT

Industrie (Classification de Nice)

Derniers inventions, produits et services

2026 Invention Voltage detector. A voltage detector includes a comparator, a voltage divider, a reference volta...
Invention Power-on detection circuit. A power-on detection circuit includes a pull-up circuit, a pull-down...
Invention Voltage driver. A voltage driver includes a first P-type transistor, a second P-type transistor,...
Invention Charge pump circuit and charge pump device. A charge pump circuit includes a first pump unit and...
2025 Invention Erasable programmable non-volatile memory cell. An erasable programmable non-volatile memory cel...
Invention Silicon-oxide-nitride-oxide-silicon type non-volatile memory. A SONOS type non-volatile memory i...
Invention Sense amplifier reducing capacitive coupling effect and a sense circuit and a memory device compr...
Invention Memory read out circuit. A memory read out circuit includes a sensing module, an output module, ...
Invention Memory program control circuit. A memory program control circuit includes a main counter, N regi...
Invention Reference current generator for non-volatile memory. A reference current generator includes two ...
Invention Voltage booster and reference control circuit. A voltage booster includes a charge pump, a boost...
Invention Method of manufacturing semiconductor device. A method of manufacturing a semiconductor device i...
Invention Level shifter. A level shifter includes a cross-coupled circuit, a differential pair circuit, a ...
Invention Erasable programmable non-volatile memory cell. A non-volatile memory cell includes an isolation...
Invention Erasable programmable non-volatile memory. A non-volatile memory cell includes a floating gate t...
Invention Enhanced electromigration storage device for non-volatile memory. An enhanced electromigration s...
Invention Level shift circuit. A level shift circuit includes a first voltage boost unit, a second voltage...
Invention Antifuse-type non-volatile memory and associated driving circuit. An antifuse-type non-volatile ...
Invention One-time programmable memory cell. A one-time programmable (OTP) memory cell includes an anti-fu...
Invention Electrostatic discharge circuit. An electrostatic discharge circuit includes a resistor, a capac...
Invention Memory cell and non-volatile memory device. A memory cell includes a first transistor, a second ...
Invention High voltage selector. A high voltage selector includes a first input terminal to receive a firs...
Invention Memory cell and memory cell array of non-volatile memory. An antifuse-type one time programmable...
Invention Level shifter. A level shifter includes first and second transistors, first and second cross-vol...
Invention Differential memory cell array structure for multi-time programming non-volatile memory. A diffe...
Invention Bandgap reference circuit. A bandgap reference circuit includes a bandgap voltage generator and ...
Invention Charge pump circuit and charge pump device. A charge pump circuit includes a pump unit and an out...
Invention Gate-all-around field effect transistor. A gate-all-around field effect transistor (GAAFET) incl...
Invention Operation pulse signal control method for non-volatile memory cell. An operation pulse signal co...
Invention Bandgap reference circuit. A bandgap reference circuit includes a first, a second and a third cu...
Invention Physically unclonable function code generating system and generating method. A physically unclon...
2024 Invention Single-poly non-volatile memory cell. A single-poly non-volatile memory cell is provided. In the...
Invention Non-volatile memory device and method of fabricating non-volatile memory cell. A non-volatile me...
Invention Voltage selector. A voltage selector includes a first input terminal for receiving a first input ...
Invention Method for retrieving preset trim code and trim code reloading system. The present disclosure pr...
Invention Erasable programmable single-ploy non-volatile memory cell. An erasable programmable single-poly...
Invention Level shifter. A level shifter includes a first load circuit, a second load circuit, a BJT trans...
Invention Power supplying circuit and associated switch controller for non-volatile memory. A power supplyi...
Invention Memory device and method for controlling verification voltage of memory device. A memory device a...
Invention Nonvolatile memory cell and manufacturing method thereof. A nonvolatile memory cell includes an ...
Invention One-time-programmable memory device. A one-time-programmable (OTP) memory device includes an act...
Invention Voltage level shifter. A voltage level shifter is provided. The voltage level shifter includes a ...
Invention Power control apparatus for non-volatile memory. A power control apparatus for a non-volatile me...
Invention Non-volatile memory device for low operation voltage. A non-volatile memory device including a s...
Invention Antifuse-type one time programming memory and associated bias voltage control method. An antifus...
Invention Level shifter. A level shifter which includes an inverter, first/second/third/fourth N-type trans...
Invention Sensing apparatus for non-volatile memory. A sensing apparatus for a non-volatile memory includes...
2016 P/S Semiconductor chips and semiconductor devices, all for use in computing devices, communication pr...
2012 P/S Design and testing of integrated circuits for others; testing and analysis of integrated circuits...