TetraMem Inc.

États‑Unis d’Amérique


Commandez votre montre hebdomadaire TetraMem Inc.
Quantité totale PI 142
Rang # Quantité totale PI 9 338
Note d'activité PI 3,1/5.0    193
Rang # Activité PI 3 490
Classe Nice dominante Services scientifiques, technolo...

Brevets

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Dernier brevet 2025 - Transimpedance amplifiers for cr...
Premier brevet 2018 - Crossbar array with reduced dist...
Dernière marque 2025 - MSOC
Première marque 2019 - ACCELERATE THE WORLD

Industrie (Classification de Nice)

Derniers inventions, produits et services

2025 Invention Transimpedance amplifiers for crossbar circuits. The present disclosure provides for transimpeda...
P/S integrated circuits and integrated circuit components; computer chips; semiconductor chips; silic...
Invention Integrated sensing and machine learning processing devices. The present disclosure provides for ...
Invention Deuterium-treated ferroelectric devices and methods for fabricating the same. 221‑xx21-xx3333), e...
Invention Read-out circuits for rram-based crossbar circuits. The present disclosure provides read-out circ...
Invention Ferroelectric memory devices with a three-dimensional topography structure. 221‑xx21-xx3333), etc...
Invention Crossbar circuits including rram devices with minimized write disturbances. The present disclosur...
Invention Resistive random-access memory devices with multi-component electrodes. The present disclosure r...
Invention Crossbar array with reduced disturbance. Crossbar arrays with reduced disturbance and methods fo...
2024 Invention Ferroelectric memory devices. 221‑xx21-xx3333), etc. Each of the interface layers comprises at le...
Invention Deuterium-treated resistive random-access memory (rram) devices. 25232223233. The RRAM device may...
Invention Resistive random-access memory (rram) devices with doped switching oxides. 25232223233.
Invention Implementing hardware neurons using tunneling devices. Systems and methods for mitigating defect...
Invention Resistive random-access memory (rram) devices with electrodes containing ruthenium. The present d...
Invention Low current rram-based crossbar array circuits implemented with interface engineering technologie...
Invention Crossbar array circuit with 3d vertical rram. Provided are 3D One-Transistor-N-RRAM (1TNR) struc...
Invention Multi-step programming schemes for programming crossbar circuits. Methods for programming crossba...
Invention Forming-free random-access memory (rram) devices. A method for fabricating a forming-free resist...
Invention Increasing selector surface area in crossbar array circuits. A method for forming a crossbar cir...
Invention Bit-serial input schemes for crossbar circuits. According to some aspects of the disclosure, a cr...
Invention Suppressing random telegraph noise in crossbar circuits. The present disclosure provides mechanis...
Invention Transimpedance amplifiers for crossbar circuits. The present disclosure provides for transimpedan...
P/S provision of service, namely, product design and development in the fields of computer-based arti...
Invention Crossbar circuits for analog computing. The present disclosure provides a crossbar circuit for pe...
Invention Crossbar circuits for performing convolution operations. In accordance with some embodiments of ...
Invention Resistive random-access memory (rram) devices with interface layers. 23234232323223233, etc. The ...
Invention Crossbar circuits utilizing current-mode digital-to-analog converters. The present disclosure rel...
Invention Rram crossbar array circuits with specialized interface layers for low current operation. Techno...
Invention Deuterium-treated ferroelectric devices and methods for fabricating the same. In accordance with...
Invention Read-out circuits for rram-based crossbar circuits. The present disclosure provides read-out cir...
Invention Ferroelectric memory devices with a three-dimensional topography structure. In accordance with s...
Invention Crossbar circuits including rram devices with minimized write disturbances. The present disclosu...
Invention System-on-a-chip (soc) integration of resistive random-access memory devices with varying switchi...
2023 Invention Enhanced error correction code for error detection and correction in multi-level cell-based memor...
Invention Ferroelectric memory devices. In accordance with some embodiments of the present disclosure, a m...
Invention Crossbar circuits for performing convolution operations. In some embodiments, an apparatus for pe...
Invention Deuterium-treated resistive random-access memory (rram) devices. The present disclosure provides...
Invention Resistive random-access memory (rram) devices with doped switching oxides. The present disclosur...
Invention Resistive random-access memory (rram) devices with electrodes containing ruthenium. The present ...
Invention Bit-serial input schemes for crossbar circuits. According to some aspects of the disclosure, a c...
Invention Resistive random-access memory (rram) devices with interface layers. The present disclosure rela...
Invention Analog in-memory discrete signal processor with minimum usage of adc. The present disclosure pro...
Invention Crossbar circuits utilizing current-mode digital-to-analog converters. The present disclosure re...
Invention Voltage-mode crossbar circuits. The present disclosure relates to voltage-mode crossbar circuits ...
2020 P/S Design of computer components; design of integrated circuits; design of computer chips; computer ...
P/S design of computer components; design of integrated circuits; design of computer chips; computer ...
2019 P/S computer software design; computer system design; provision of service, namely, product design an...