Attopsemi Technology Co., Ltd

Taïwan, Province de Chine


 
Quantité totale PI 69
Rang # Quantité totale PI 19 693
Note d'activité PI 1,9/5.0    11
Rang # Activité PI 81 859
Classe Nice dominante Services scientifiques, technolo...

Brevets

Marques

66 3
0 0
0 0
0
 
Dernier brevet 2022 - Physically unclonable function p...
Premier brevet 2011 - One-time programmable memories u...
Dernière marque 2023 - I-FUSE
Première marque 2012 - ATTOPSEMI

Industrie (Classification de Nice)

Derniers inventions, produits et services

2023 P/S Design for others of integrated circuits and integrated circuit cores for use in wireless communi...
2022 Invention Physically unclonable function produced using otp memory. An electronic device and method of gen...
P/S Electrical fuses; Electronic chips for the manufacture of integrated circuits; Electronic integra...
Invention Programmable resistance memory on wide-bandgap semiconductor technologies. Programmable resistive...
2021 Invention One-time programmable memories with ultra-low power read operation and novel sensing scheme. An O...
2020 Invention One-time programmable memories with low power read operation and novel sensing scheme. A time-bas...
Invention Programmable resistance memory on thin film transistor technology. Programmable resistive memory ...
Invention One-time programmable memory using gate-all-around structures. An One-Time Programmable (OTP) mem...
2019 Invention Programmable resistive memories with low power read operation and novel sensing scheme. A time-ba...
Invention Fully testible otp memory. A method of testing an OTP memory is disclosed. An OTP program mechani...
Invention One-time programmable devices using gate-all-around structures. An One-Time Programmable (OTP) me...
2018 Invention Programmable resistive memory formed by bit slices from a standard cell library. Architecture, de...
Invention Low power read operation for programmable resistive memories. A programmable resistive memory has...
Invention One-time programmable devices having a semiconductor fin structure with a divided active region. ...
2017 Invention Programmable resistive device and memory using diode as selector. Building programmable resistive...
Invention Otp memory with high data security. A method of programming electrical fuses reliably is disclose...
Invention Method and structure for reliable electrical fuse programming. A method of programming electrical...
2016 Invention Programmable resistive devices using finfet structures for selectors. A programmable resistive me...
Invention One-time programmable device with integrated heat sink. Junction diodes fabricated in standard CM...
Invention One-time programmable memory devices using finfet technology. An OTP (One-Time Programmable) memo...
Invention Integrated otp memory for providing mtp memory. An integrated One-Time Programmable (OTP) memory ...
2015 Invention Circuit and method for power-on reset of an integrated circuit. A Power-On-Reset circuit is disc...
Invention Method and system of programmable resistive devices with read capability using a low supply volta...
Invention Low-pin-count non-volatile memory interface with soft programming capability. A low-pin-count non...
Invention Circuit and system of using junction diode as program selector for one-time programmable devices ...
Invention System and method of a novel redundancy scheme for otp. A novel redundancy scheme to repair no mo...
Invention One-time programmable memory devices using finfet technology. An OTP (One-Time Programmable) elem...
Invention Low-pin-count non-volatile memory interface for 3d ic. A low-pin-count non-volatile (NVM) memory ...
2014 Invention Low-pin-count non-volatile memory interface. A low-pin-count non-volatile (NVM) memory to be prov...
Invention Programmably reversible resistive device cells using cmos logic processes. Junction diodes fabric...
Invention Circuit and system of using finfet for building programmable resistive devices. Junction diodes o...
Invention Circuit and system of using junction diode of mos as program selector for programmable resistive ...
Invention One-time programmable devices having program selector for electrical fuses with extended area. Ju...
Invention Low-pin-count non-volatile memory embedded in a integrated circuit without any additional pins fo...
2013 Invention Circuit and system for concurrently programming multiple bits of otp memory devices. Circuits and...
Invention One-time programmable memories using polysilicon diodes as program selectors. Polysilicon diodes ...
Invention Circuits and methods of a self-timed high speed sram. Circuits and methods for precisely self-tim...
Invention Otp memories functioning as an mtp memory. Techniques, systems and circuitry for using One-Time P...
Invention Circuit and system of using junction diode as program selector for metal fuses for one-time progr...
Invention Circuit and system of using junction diode as program selector for one-time programmable devices....
Invention Structures and techniques for using semiconductor body to construct bipolar junction transistors....
Invention Circuit and system of using junction diode as program selector and mos as read selector for one-t...
2012 Invention Structures and techniques for electro-static discharge (esd) protection using ring structured dio...
Invention Structures and techniques for using mesh-structure diodes for electro-static discharge (esd) prot...
Invention Structures and techniques for using semiconductor body to construct scr, diac, or triac. Switch d...
Invention System and method of in-system repairs or configurations for memories. In-system repairing or con...